JP2003253488A - Electrolytic treatment apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electrolytic treatment apparatus with which electrolytic treatment of the surface of a substrate can be uniformly carried out without generating defects. <P>SOLUTION: A surface S to be plated is plated by filling a plating liquid Q between a base plate W having a contact point with a cathode and an anode 20 opposed to the base plate W. A rectification box 50 is provided between the base plate W and the anode 20 in the plating liquid Q. In the rectification box 50, a porous cathode side member 51 and a porous anode side member 55 are arranged opposed to each other through a gap 58, and plating liquid injection nozzles 65 are provided for inpouring the plating liquid toward central directions from a plurality of peripheral parts of the gap 58. The plating liquid Q is allowed to separately flow toward the both of the base plate W and the anode 20 through the faces of the porous cathode side member 51 and the porous anode side member 55 by inpouring the plating liquid Q into the rectification box 50 from the plating liquid injection nozzles 65. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrolytic processing apparatus for subjecting a surface (processing surface) of a substrate (processing substrate) to electrolytic processing such as plating and etching.

[0002]

2. Description of the Related Art In recent years, as a metal material for forming a wiring circuit on a semiconductor substrate, copper (Cu) having a low electric resistivity and a high electromigration resistance has been remarkably used in place of aluminum or an aluminum alloy. Has become. This kind of copper wiring is formed by depositing copper on almost the entire surface of the substrate by a method such as CVD, sputtering, and plating, and filling the inside of the fine recesses provided on the surface of the substrate with copper to remove excess copper by chemical mechanical. It is generally formed by a so-called damascene process, which is removed by polishing (CMP).

FIGS. 23A to 23C show an example of manufacturing a copper wiring board W of this type in the order of steps. As shown in FIG. 23A, a semiconductor substrate 1 on which a semiconductor element is formed is formed. An insulating layer 2 made of a SiO ₂ oxide film or another Low-k material is deposited on the upper conductive layer 1a, and inside the insulating layer 2, a contact hole 3 and a wiring groove are formed by, for example, a lithography etching technique. 4, a barrier layer 5 made of TaN or the like is further formed thereon, and a seed layer 7 is further formed thereon as a power feeding layer for electrolytic plating. As the barrier layer 5, Ta / Ta
N mixed layer, TiN, WN, SiTiN, CoWP, Co
WB etc. are also conceivable.

Then, as shown in FIG. 23B, the surface of the substrate W is plated with copper to fill the contact holes 3 and the wiring grooves 4 of the substrate W with copper, and at the same time the insulating layer 2 is covered. A copper film 6 is deposited on. Then, by chemical mechanical polishing (CMP), the copper film 6 on the insulating layer 2 is removed, and the surface of the copper film 6 filled in the contact hole 3 and the wiring groove 4 and the surface of the insulating layer 2 are almost removed. Make it on the same plane. As a result, as shown in FIG. 23C, the wiring made of the copper film 6 is formed.

The surface of the substrate W to be plated (the surface to be processed)
In a so-called face-down type plating apparatus for plating downward, as shown in FIG. 3, the plating surface 21 of the substrate W having a contact point with the cathode electrode in the vicinity of the outer periphery is placed on the plating bath 21.
The anode 200
While spraying the plating solution from the lower side of the opening 201 provided in the center toward the upper side, the plating solution is applied to the surface S to be plated and the anode 200
A fountain type is generally used in which the surface S to be plated is plated by applying a current between the substrate W and the substrate W.

As shown in FIG. 4, it is desirable that the center of the surface of the plating solution Q that contacts the surface S to be plated of the substrate W be smoothly raised. Because the center of the surface S to be plated first comes into contact with the plating solution at the time of contact with the liquid, and then the surface to be contacted spreads out to the periphery, so that air bubbles and the like do not remain between the surface S to be plated and the plating solution instantly. This is because the entire plating surface S can be brought into contact with the liquid and uniform plating can be performed. In addition, it is suitable to perform a uniform plating process by providing a flow of the plating solution to the surface S to be plated without disturbance even during the plating process. Then, in order to form such a plating solution surface without disturbance of the plating solution, as shown in FIG. 3, the distance between the substrate W and the anode 200, that is, the distance between the electrodes is set large, and the sudden flow direction change is stopped. In addition, the rapid change in the cross-sectional area of the flow path may be reduced. By doing so, the flow of the plating solution becomes a laminar flow, and the formed plating film has few defects.

However, if the distance between the electrodes is large,
The electric field on the surface S to be plated is concentrated on the outer peripheral portion near the cathode electrode, and it is difficult to improve the uniformity of the plating film thickness on the surface S to be plated. Also the anode 200
Since the opening 201 is provided in the center, the improvement of the plating film uniformity is further hindered.

[0008] As the device generation advances, the thickness of the seed layer is gradually reduced, and in the 70 nm generation, the thickness is further reduced to 40 nm. In this case, since the sheet resistance of the substrate W before plating rises, the electric field is concentrated on the outer peripheral side. In order to solve this, it is effective to increase the resistance of the plating solution or shorten the distance between the electrodes. In order to shorten the distance between the substrate W and the anode 200, as shown in FIG. 5, the plating solution Q is introduced by horizontally spraying from the outer peripheral side between the substrate W and the anode 200 toward the center. A horizontal jet type may be used. With this structure, not only the distance between the electrodes is shortened but also the anode 2
It is not necessary to provide an opening at 00, and the uniformity of the plating film thickness within the surface S to be plated is improved.

However, in the case of this method, the sprayed plating solutions collide in the central portions and are in opposite directions, and shearing of the flow occurs to cause turbulence, so that the plating solution surface without disturbance as shown in FIG. Is difficult to do. Particularly in the case of this method, the plating solution horizontally ejected from the nozzle 220 must be ejected strongly in order to reach the central portion.
A vortex is easily generated at the injection port of 0, and the flow of the plating solution is further disturbed, and the black film generated on the surface of the anode 200 is soared that particles may adhere to the surface S to be plated as particles and cause defects. Occurs.

[0010]

SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and an object thereof is to provide an electrolytic treatment apparatus capable of uniformly performing electrolytic treatment on a surface of a substrate to be treated without defects. It is in.

[0011]

In order to solve the above problems, the invention according to claim 1 has a substrate to be processed having a contact point between one of an anode and one of the electrodes of the cathode and the other substrate facing the substrate to be processed. In the electrolytic treatment apparatus for performing the electrolytic treatment of the surface of the substrate to be treated by filling the electrolytic solution between the electrode and, in the electrolytic solution between the substrate to be treated and the other electrode, a box made of a porous body, A rectification box that injects an electrolytic solution into the inside to pass the surfaces of the substrate to be processed and the other electrode opposite to each other through the surfaces and to branch and send the electrolytic solution toward both the substrate to be processed and the other electrode. The electrolytic treatment apparatus is characterized in that.

By providing the rectifying box, the electrolytic solution is shunted from the inside of the rectifying box toward both the substrate to be processed and the other electrode, and is sent out to the outside, and does not flow back into the rectifying box. Is discharged through the region on the one side and the region on the other electrode side. Therefore, the particles generated in the region on the other electrode side do not adversely affect the substrate to be processed. When the other electrode is used as the anode, the black film formed on the anode surface is preloaded inside the rectifying box, and the flow of the porous body on the side facing the anode side is downward, so that the black film is formed on the porous body. Since it does not adsorb, periodic cleaning of the porous body is also unnecessary.

According to a second aspect of the present invention, the porous body forming the flow regulating box is a porous body or a resin body having a large number of punching hole-shaped openings. It is the electrolytic treatment apparatus described.

In particular, the porous body is preferable because it can reduce the pore diameter and increase the aperture ratio, so that the passage of particles can be prevented without hindering the permeation of the electrolytic solution.

According to a third aspect of the present invention, in the rectifying box, a pair of plates made of a porous body are installed so as to face each other with a gap therebetween, and an electrolytic solution is directed toward a central direction from a plurality of portions around the gap. The electrolytic treatment apparatus according to claim 1 or 2, wherein an electrolytic solution injecting means for injecting is installed.

The electrolytic solution injected from the electrolytic solution injecting means collides in the vicinity of the center and splits vertically, passes through the rectifying box and is inverted, and flows in the direction opposite to the inflow direction of the electrolytic solution outside the rectifying box. However, the perforated plate alleviates turbulence such as flow shear and vortices caused by the backflow of the electrolyte. Therefore, the flow of fluid becomes smooth, and most of the electrolyte injected by the electrolyte injection means can easily reach the center and be smoothly inverted.
Effective electrolytic treatment can be performed.

According to a fourth aspect of the present invention, in the surface of the rectifying box on the side facing the substrate to be processed, the flow rate of the electrolytic solution in the central portion of the surface is greater than the flow rate of the electrolytic solution in the peripheral portion. 4. The electrolytic treatment apparatus according to claim 1, wherein the electrolytic treatment apparatus has a passage flow rate control structure that increases the number of passages.

According to a fifth aspect of the present invention, in the passage flow rate control structure, the aperture ratio of the central portion of the surface of the rectification box on the side facing the substrate to be processed is made larger than the aperture ratio of the peripheral portion, Alternatively, the thickness of the central portion of the surface of the rectifying box that faces the substrate to be processed is made thinner than the thickness of the peripheral portion, or an opening is formed in the central portion of the surface of the rectifying box that faces the substrate to be processed. The electrolytic treatment apparatus according to claim 4, wherein the electrolytic treatment apparatus is configured by being provided.

With such a passage flow rate control structure, it is possible to control the electrolyte solution passage flow rate in the center of the rectification box to be larger than that in the peripheral portion, and the effective electrolytic treatment of the substrate to be processed can be performed.

According to a sixth aspect of the present invention, the rectification box is covered so that the shunt ratio of the electrolytic solution shunted from the rectification box toward both the substrate to be processed and the other electrode is a predetermined ratio. The electrolytic treatment according to any one of claims 1 to 5, characterized in that the aperture ratio and / or the plate thickness of the porous body constituting each surface facing the processing substrate and the other electrode are different. It is a device.

[0021]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a schematic sectional view of a plating apparatus according to one embodiment of the present invention. As shown in the figure, in this plating apparatus, an anode 20 is installed on a bottom portion 11 of a plating tank 10 and a substrate (a substrate to be processed) held by a substrate holder 30 on the anode 20 so as to face the anode 20 in parallel. ) W is installed, the substrate W and the anode 2
The plating solution Q is filled between 0 and the rectification box 50 is installed in the plating solution Q between the substrate W and the anode 20. Note that FIG. 1 shows a state in which the substrate W is held by the substrate holder 30 and the liquid level of the plating solution Q is raised to a plating position. Each component will be described below.

The plating tank 10 is a substantially circular container,
A plurality of anode side plating solution discharge passages 13 are provided at equal intervals around the anode 20 of the bottom portion 11 (the same number as the number of plating solution injection nozzles 65 described below in this embodiment), and a peripheral wall 16 is provided inside the side wall 15. The overflow liquid recovery tank 17 is formed on the outside by providing the above. Then, the plating solution discharged from the anode side plating solution discharge passage 13 and the plating solution collected in the overflow solution collecting tank 17 are collected in the circulation tank 74 by the pipes 71 and 73, respectively, and are described below by the pipe 75 and the pump P. It is configured to supply the plating solution injection nozzle 65 of the rectification box 50 (this circulation mechanism is referred to as an electrolyte circulation mechanism). In addition, inside the peripheral wall 16 and the rectification box 5
A ring-shaped electric field concentration preventing member 19 is provided so as to project obliquely inward from the outer periphery of the upper surface of No. 0, and thereby electric field concentration is prevented from concentrating on the outer peripheral portion of the surface S to be plated that serves as the cathode. .

The anode 20 has a disk shape and is made of a soluble material such as phosphorus-containing copper containing phosphorus in copper. The surface of the anode 20 is exposed at the center of the bottom 11 of the plating tank 10. It is installed. An insoluble material may be used as the anode 20.

The substrate holder 30 has a housing 32 having a bottomed cylindrical shape having an opening 32a in its peripheral wall, and a pressing ring 34 arranged inside the housing 32. The housing 32 is connected to an output shaft of a motor 36, and the pressing ring 34 is connected to a cylinder rod 39 of a cylinder 38 mounted downward on the housing 32. A ring-shaped substrate holding portion 42 protruding inward is provided at the lower end of the housing 32.
Further, a ring-shaped seal member 44 is attached which protrudes inward and whose top end protrudes upward in a spire shape. Further, a plurality of cathode electrode contacts 4 are provided outside the sealing material 44.
6 are arranged.

As a result, the substrate W is held by a suction hand or the like while the surface of the plating solution Q is lowered and the housing 3 is held.
After being put in the inside of the substrate 2, placed on the upper surface of the sealing material 44 of the substrate holding part 42, and the suction hand is pulled out from the housing 32, the pressing ring 34 is lowered. As a result, the substrate W
Holding the substrate W by sandwiching the peripheral edge of the substrate between the seal material 44 and the lower surface of the pressing ring 34, and when the substrate W is held, the lower surface of the substrate W and the sealing material 44 are brought into pressure contact with each other to reliably seal them. At the same time, the seed layer 7 (see FIG. 23A) provided on the surface S to be plated of the substrate W and the cathode electrode contact 46 are energized so that the seed layer 7 serves as a cathode.

FIG. 2 is a view showing the rectification box 50,
2A is a schematic plan view, and FIG. 2B is A of FIG.
It is a sectional view taken along the line A-A. As shown in FIG. 1 and FIG. 1, in the rectification box 50, a pair of upper and lower cathode-side members 51 and an anode-side member 55, which are made of a porous body and are plate-shaped, are attached to the upper and lower surfaces of a ring-shaped spacer member 61. 61
It is configured by mounting eight plating solution injection nozzles 65 therein. That is, the rectification box 50 is configured such that the cathode side member 51 and the anode side member 55 are opposed to each other with a gap 58 therebetween to form one box body (box).

The cathode side member 51 has a substantially disc shape,
An opening 53 is provided at the center, and the entire surface is formed so as to gradually incline upward (to form a flat conical shape) from the outer periphery toward the center. On the other hand, the anode side member 55 has a disk shape and is made of the same porous material as the cathode side member 51.

The cathode side member 51 and the anode side member 55
As the material of the above, a porous material made of a resin such as polypropylene or polyethylene (a material having a large number of fine holes, a porous material) is used, but a porous material of ceramic may also be used. This porous material has a property of impregnating and passing a liquid, and in the present invention, its pore diameter is 1 μm to 100 μm.
m, more preferably 10 μm to 30 μm, and having an aperture ratio of 5% to 50%, further preferably 20% to 40%. The pore diameter and the opening ratio are such that the cathode side member 51 and the anode side member 55 have a function as a rectifying plate, and at the same time, the pressure (preload) given to the gap 58 by the plating solution injected from the plating solution injection nozzle 65. This is a range suitable for passing through both the cathode side member 51 and the anode side member 55 and being smoothly sent to the outside.

The spacer member 61 is a molded product of polypropylene, fluororesin or the like, and eight plating solution injection nozzles (plating solution injection means) 65 are directed inward at equal intervals, that is, the cathode side member 51 and the anode side member 55. It is installed so as to inject the plating solution from the peripheral portion of the gap 58 formed by to the central portion.

As shown in FIG. 1, by installing the rectification box 50 between the substrate W and the anode 20, a substrate-side area A1 and an anode-side area A2 are formed above and below the rectification box 50, respectively.

Next, a plating method using this plating apparatus will be described. First, the suction hand of the transfer robot and the substrate W suction-held with the surface to be plated faced downward by the suction hand are inserted into the inside of the housing 32 through the opening 32a, and the suction hand is moved downward, followed by vacuum suction. After releasing, the substrate W is placed on the substrate holding portion 42 of the housing 32, and then the suction hand is raised to raise the housing 3
Pull out from 2. Next, the pressing ring 34 is lowered to hold the substrate W by sandwiching the peripheral portion of the substrate W between the substrate holding portion 42 and the lower surface of the pressing ring 34.

Then, the pump P is driven to inject the plating solution from the plating solution injection nozzle 65 into the straightening box 50,
At the same time, the housing 32 and the substrate W held by it are rotated at a medium speed, the plating solution Q is filled up to a predetermined amount, and when several seconds have passed, the rotation speed of the housing 32 is rotated at a low speed (for example, 100 rotations / min). ), And a plating current is passed between the anode 20 and the seed layer 7 (see FIG. 23A) provided on the surface S to be plated of the substrate W to be the cathode to perform electroplating. Plating solution flow rate is usually 3 L / m
In is preferable.

The plating solutions sprayed from the respective plating solution spray nozzles 65 are all in the gap 58 of the rectifying box 50.
Toward the center of the portion of the above, while preloading in the rectification box 50, the flow is divided into a flow that collides in the vicinity of the center and the flow reverses upward and a flow that reverses downward. To do. The flow reversed to the upper side is the opening 5
3 and the inside of the cathode-side member 51 around it to enter the cathode-side area A1 toward the surface S to be plated, and flow from the vicinity of the center of the surface S to be plated in a substantially radial direction toward the outer peripheral direction to the peripheral wall 16. The excess liquid is collected and discharged into the overflow liquid collection tank 17. On the other hand, the flow reversed toward the lower side passes through the inside of the anode side member 55 and is introduced into the anode side region A2, and flows substantially radially from the vicinity of the center of the anode 20 toward the outer peripheral direction, and the anode side plating solution discharge passage. 1
Emitted from 3. In other words, the pre-load formed in the flow straightening box 50 and the combined pressure of the heads of the plating liquid Q create a flow of the plating liquid Q that flows outward from the upper and lower surfaces of the straightening box 50, respectively.

The discharged plating solutions are all collected in the circulation tank 74, circulated again by the pump P, and sprayed from the plating solution spray nozzles 65. It should be noted that a part of the plating solution sprayed from each plating solution spray nozzle 65 is divided into upper and lower parts before reaching the central part, and each of the cathode side members 5
1 and the anode side member 55 to penetrate the cathode side region A1
And is introduced into the anode side region A2.

In the above embodiment, the reason why the opening 53 is provided in the center of the cathode side member 51 is to discharge the bubbles generated on the plating solution injection nozzle 65 side toward the substrate side area A1 and is not always necessary. . Similarly, the cathode-side member 51 is provided with an inclined surface in order to facilitate the movement of bubbles generated on the plating solution injection nozzle 65 side toward the opening 53.
Not necessarily required.

By the way, in the present invention, by installing the rectification box 50, the flow of the plating solution is rectified to an ideal one, and the plating film on the surface S to be plated is made uniform and the defect is less likely to occur. However, the reason is as follows.

The plating solution, which is split into the anode-side region A2 and spreads radially on the anode 20, is flown once below the rectification box 50 because the anode-side member 55 rectifies the flow direction of the plating solution. The liquid does not easily return to the rectifying box 50, its backflow is prevented, and the entire flow goes to the anode side plating solution discharge passage 13. Therefore, all of the black film generated and peeled off on the surface of the anode 20 is directed to the anode side plating solution discharge path 13 and does not remain in the plating tank 10 and does not adversely affect the plating film on the surface S to be plated. Therefore, defects are less likely to occur in the generated plating film. The plating solution discharged from the anode side plating solution discharge passage 13 is the plating solution injection nozzle 65.
It may be removed by a filter or the like before being circulated.

The shearing of the flow generated at the boundary between the plating solution jetted from the plating solution jetting nozzle 65 and the plating solution which is turned upside down in the rectifying box 50 is prevented by the cathode side member 51 and the anode side member 55 which partition both flows. As a result, the flow of the plating solution becomes smooth, and most of the flow of the plating solution injected from the plating solution injection nozzle 65 can easily reach the center portion and be reversed, and a large amount of the plating solution in the cathode side region A1. From the center of the substrate W toward the overflow liquid recovery tank 17 along the surface S to be plated, effective plating can be performed.

Cathode side member 51 and anode side member 5
5 and the plating solution injection nozzle 65, which is the solution inlet, are formed in an integrated box, so the plating solution injection nozzle 6
By ejecting the plating solution from No. 5, a preload can be applied to the inside of the box and the pressure can be made larger than the outside pressure, and the plating solution flowing out from the upper and lower surfaces of the rectification box 50 to the inside of the rectification box 50 again. Backflow to the cathode side member 51 and the anode side member 5
The flow of the plating solution can be optimized by controlling the structure of the opening ratio and thickness of 5 (passage flow rate control structure). For example, by making the aperture ratio / thickness of the entire anode side member 55 uniform, a uniform outflow flow can be created over the entire surface of the anode side member 55, or the aperture ratio of the central part of the cathode side member 51 can be made higher than that of the peripheral part. (Or, by making the thickness of the central portion thinner than that of the peripheral portion or providing the opening 53), a large amount of the plating solution may be introduced into the central portion of the cathode side member 51. As a result, it is possible to form a plating liquid surface in which the center smoothly rises as shown in FIG. 4, and it is possible to contact the surface S to be processed of the substrate W instantaneously without bubbles from the central portion toward the outer periphery. Note that the outflow rate of each part may be controlled by changing the aperture ratio and thickness of each part of the anode member 55. Further, when it is desired to control the splitting ratio of the plating solution, which is split from the rectifying box 50 toward both the substrate W and the anode 20, to a predetermined ratio, the opening ratio or the plate thickness of the cathode side member 51 and the anode side. The aperture ratio or the plate thickness of the member 55 may be different. For example, the cathode side member 5
1 is set higher than the aperture ratio of the anode side member 55 (or the thickness of the cathode side member 51 is set to the anode side member 5).
It is possible to increase the amount of the plating solution permeating to the cathode side member 51 side (by making the thickness thinner than 5).

The flow of the plating solution jetted from the plating solution jetting nozzle 65 produces a vortex, and the jet flows of the adjacent plating solution jetting nozzles 65 interfere with each other to cause turbulence. This turbulence is mitigated by the movement of the jet. Particularly, in the present invention, as described above, since the flow shearing is prevented and the flow of the plating solution becomes smooth, the flow rate of the plating solution ejected from the plating solution injection nozzle 65 may be slowed down. The eddy itself is less likely to occur in the flow of the plating solution, and the turbulence due to the interference of the jet flow is less likely to occur.

After the plating is completed as described above, the plating solution Q in the plating tank 10 is drained to expose the housing 32 and the substrate W held therein. In this state, the housing 32 and the substrate W held by the housing 32 are moved at high speed (for example, 500
Rotate at ~ 800 rpm / min) to drain the plating solution by centrifugal force. After draining is completed, the housing 32
The rotation of the housing 32 is stopped so as to face in a predetermined direction.

After the housing 32 is completely stopped, the pressing ring 34 is raised, and then the transfer robot suction hand or the like is inserted into the inside from the opening 32a of the housing 32 with the suction surface facing downward. The suction hand is lowered to a position where the suction can be performed. Then, the substrate W is vacuum-sucked by the suction hand, the suction hand is moved to the upper part of the opening 32a of the housing 32, and the suction hand and the substrate W held by the suction hand are taken out from the opening 32a of the housing 32.

FIG. 6 is a plan layout view of a substrate processing apparatus equipped with the above-described plating apparatus. As shown in the figure, this substrate processing apparatus performs a loading / unloading area 520 for delivering and receiving a substrate cassette accommodating semiconductor substrates, a process area 530 for performing process processing, and cleaning and drying of the semiconductor substrate after the process processing. A cleaning / drying area 540 is provided. The cleaning / drying area 540 is arranged between the loading / unloading area 520 and the process area 530.
A partition 521 is provided in the loading / unloading area 520 and the cleaning / drying area 540, and a partition 523 is provided between the cleaning / drying area 540 and the process area 530.

The partition 521 has a loading / unloading area 520.
A passage (not shown) for transferring the semiconductor substrate is provided between the cleaning and drying area 540 and a shutter 522 for opening and closing the passage. In addition, the partition wall 523
Also, a passage (not shown) for transferring the semiconductor substrate is provided between the cleaning / drying area 540 and the process area 530, and a shutter 524 for opening and closing the passage is provided. Cleaning / drying area 540 and process area 53
0 can supply and exhaust air independently.

The substrate processing apparatus for wiring a semiconductor substrate having the above-described structure is installed in a clean room, and the pressure in each area is (pressure in loading / unloading area 520)> (pressure in cleaning / drying area 540)> (process area) (The pressure of 530) and the pressure of the carry-in / carry-out area 520 is set lower than the pressure in the clean room. This allows
Prevent air from flowing from the process area 530 to the cleaning / drying area 540, and prevent air from flowing from the cleaning / drying area 540 to the loading / unloading area 520,
Further, air is prevented from flowing out of the carry-in / carry-out area 520 into the clean room.

In the carry-in / carry-out area 520, a load unit 52 for accommodating a substrate cassette accommodating semiconductor substrates is provided.
0a and unload unit 520b are arranged.
In the cleaning / drying area 540, two water washing sections 541 and two drying sections 542 for performing post-plating processing are arranged, and a transfer section (transfer robot) for transferring semiconductor substrates.
543 is provided. As the water washing section 541, for example, a pencil type with a sponge on the front end or a roller type with a sponge is used. Drying part 5
As 42, for example, a type in which a semiconductor substrate is spun at high speed to dehydrate and dry is used.

In the process area 530, a pretreatment tank 531 for pretreating the plating of the semiconductor substrate and a plating tank for performing the copper plating treatment (the plating apparatus of the present invention, and The same applies to the device for performing) 53
2 is disposed, and a transfer unit (transfer robot) 533 that transfers the semiconductor substrate is provided.

FIG. 7 shows the flow of airflow in the substrate processing apparatus. In the washing / drying area 540, fresh external air is taken in from the pipe 546 and pushed by the fan through the high-performance filter 544, and the washing section 541 and the drying section 54 as clean air downflow from the ceiling 540a.
2 is supplied around. Most of the clean air supplied is supplied from the floor 540b to the ceiling 540 through the circulation pipe 545.
It is returned to the a side, pushed again by the fan through the high performance filter 544, and circulates in the cleaning / drying area 540. Part of the airflow is exhausted from the water washing section 541 and the drying section 542 through the duct 552.

Although the process area 530 is called a wet zone, particles are not allowed to adhere to the surface of the semiconductor substrate. Therefore, the process area 530
Particles are prevented from adhering to the semiconductor substrate by being pushed in by a fan from the ceiling 530a and flowing down-flow clean air through the high-performance filter 533.

However, if the total flow rate of the clean air forming the downflow depends on the supply / exhaust from the outside,
A huge amount of air supply and exhaust is required. For this reason, only the exhaust that maintains the negative pressure in the room is used as the external exhaust from the duct 553, and most of the downflow air is supplied to the pipes 534 and 53.
Circulating airflow through 5 is used to cover the situation.

When the circulating air flow is used, the process area 5
The clean air that has passed through 30 contains the chemical liquid mist and gas, so the clean air is passed through the scrubber 536 and the mito separator 53.
Remove through 7,538. As a result, the ceiling 530a
The air that has returned to the side circulation duct 534 does not contain the chemical mist or gas, is pushed again by the fan, passes through the high-performance filter 533, and circulates in the process area 530 as clean air.

Part of the air that has passed through the process area 530 from the floor portion 530b is discharged to the outside through the duct 553, and the air containing the chemical mist and gas is discharged to the outside through the duct 553. Duct 539 on the ceiling 530a
From the above, fresh air corresponding to these exhaust amounts is supplied to the process area 530 to such an extent that the negative pressure is maintained.

As described above, the respective pressures of the carry-in / carry-out area 520, the cleaning / drying area 540 and the process area 530 are (pressure of the carry-in / carry-out area 520)> (pressure of the cleaning / drying area 540)> (process Area 530 pressure). Therefore, the shutters 522, 524
When (see FIG. 6) is opened, the air flow between these areas, as shown in FIG.
The cleaning / drying area 540 and the process area 530 flow in this order. Further, the exhaust gas is collected in the collective exhaust duct 554 through the ducts 552 and 553, as shown in FIG.

FIG. 8 is an external view showing an example in which the substrate processing apparatus is arranged in a clean room. Cassette delivery port 555 and operation panel 556 in the loading / unloading area 520
One side surface is exposed in a high cleanness working zone 558 of a clean room partitioned by a partition wall 557, and the other side surface is housed in a low cleanness utility zone 559.

As described above, the cleaning / drying area 540 is arranged between the loading / unloading area 520 and the process area 530, and the loading / unloading area 520 and the cleaning / drying area 5 are arranged.
40 and between the cleaning / drying area 540 and the process area 530, the partition walls 521 are provided, so that the partition wall 521 is carried from the working zone 558 into the substrate processing apparatus for semiconductor substrate wiring through the cassette transfer port 555 in a dried state. The semiconductor substrate to be processed is plated in the substrate processing apparatus, and is carried out to the working zone 558 in a cleaned and dried state. Therefore, particles and mist do not adhere to the surface of the semiconductor substrate and the cleanliness in the clean room is maintained. The high working zone 558 is not contaminated with particles, chemicals or cleaning liquid mist.

Although FIGS. 6 and 7 show an example in which the substrate processing apparatus includes the carry-in / carry-out area 520, the cleaning / drying area 540, and the process area 530, the process area 530 is adjacent to or adjacent to the process area 530. Then C
The process area 5 is provided with an area for arranging the MP device.
30 or a cleaning / drying area 540 may be arranged between the area where the CMP apparatus is arranged and the carry-in / carry-out area 520. The point is that the semiconductor substrate may be carried into the substrate processing apparatus for wiring the semiconductor substrate in a dry state, and the semiconductor substrate after the plating process may be washed and discharged in a dried state.

In the above example, the substrate processing apparatus has been described by taking the plating apparatus for semiconductor substrate wiring as an example. However, the substrate is not limited to the semiconductor substrate, and the portion to be plated is also formed on the substrate surface. It is not limited to the wiring part. Further, in the above example, copper plating was described as an example, but the invention is not limited to copper plating.

FIG. 10 is a diagram showing a plane structure of another substrate processing apparatus for wiring a semiconductor substrate. As shown in the figure, a substrate processing apparatus for wiring a semiconductor substrate includes a carry-in section 601 for carrying in a semiconductor substrate, a copper plating tank 602 for copper plating, washing tanks 603, 604 for water washing, and a chemical mechanical polishing (CM).
PMP part 605 for performing P), water washing tanks 606 and 607, a drying tank 608, and a carry-out section 609 for carrying out the semiconductor substrate on which the wiring layer formation has been completed. Are arranged as one device to form a substrate processing device for semiconductor substrate wiring.

In the substrate processing apparatus having the above arrangement, the substrate transfer means takes out the semiconductor substrate on which the wiring layer is not formed from the substrate cassette 601-1 placed on the carry-in section 601 and transfers it to the copper plating tank 602. To do. In the copper plating tank 602, a copper plating layer is formed on the surface of the semiconductor substrate W including a wiring portion including wiring grooves and wiring holes (contact holes).

The semiconductor substrate W on which the copper plating layer has been formed in the copper plating tank 602 is washed with the substrate transfer means in a water washing tank 60.
3 and the washing tank 604, and wash with water. Subsequently, the semiconductor substrate W that has been washed with water is transferred to the CMP section 605 by a substrate transfer means, and in the CMP section 605, the copper plating layer formed in the wiring groove or the wiring hole from the copper plating layer is left and the semiconductor substrate W is left. The copper plating layer on the surface of is removed.

Subsequently, the semiconductor substrate in which the unnecessary copper plating layer on the surface of the semiconductor substrate W has been removed leaving the copper plating layer formed in the wiring portion including the wiring groove and the wiring hole from the copper plating layer as described above. W is sent to the washing tank 606 and the washing tank 607 by the substrate transfer means, washed with water, and the semiconductor substrate W that has been washed with water is dried in the drying tank 608, and the dried semiconductor substrate W is formed into a wiring layer. The finished semiconductor substrate is stored in the substrate cassette 609-1 of the carry-out section 609.

FIG. 11 is a diagram showing a planar structure of another substrate processing apparatus for wiring a semiconductor substrate. The substrate processing apparatus shown in FIG. 11 is different from the apparatus shown in FIG.
02, a lid plating tank 612 for forming a protective film on the surface of the copper plating film, a CMP section 615, and water washing tanks 613 and 614 are added, and these are configured as one device including them.

In the substrate processing apparatus having the above arrangement, the copper plating layer is formed on the surface of the semiconductor substrate W including the wiring portion including the wiring groove and the wiring hole (contact hole). Subsequently, the CMP portion 605 removes the copper plating layer on the surface of the semiconductor substrate W, leaving the copper plating layer formed in the wiring groove and the wiring hole from the copper plating layer.

Subsequently, the semiconductor substrate W from which the copper plating layer on the surface of the semiconductor substrate W has been removed by leaving the copper plating layer formed on the wiring portion consisting of the wiring groove and the wiring hole from the copper plating layer as described above is washed with water. It is transferred to a tank 610 and washed there with water. Subsequently, in the pretreatment tank 611, pretreatment for performing lid plating described later is performed. The semiconductor substrate W for which the pretreatment has been completed is transferred to the lid plating tank 612, and a protective film is formed on the copper plating layer formed on the wiring portion in the lid plating tank 612. As this protective film, for example, a Ni-B electroless plating bath is used.
After forming the protective film, the semiconductor substrate W is washed with water tanks 606, 6
It is washed with water at 07 and further dried in a drying tank 608.

Then, the upper portion of the protective film formed on the copper plating layer is polished by the CMP portion 615 to be flattened, and the washing tank 6 is then washed.
After being washed with water at 13, 614, the semiconductor substrate W is dried in the drying tank 608, and the semiconductor substrate W is transferred to the substrate cassette 609 of the unloading unit 609.
Store in -1.

FIG. 12 is a diagram showing a planar structure of another substrate processing apparatus for wiring a semiconductor substrate. As shown in the figure, in this substrate processing apparatus, a robot 616 is arranged in the center, and a copper plating tank 602, a water washing tank 603, and a water washing tank 6 for performing copper plating in a range reached by a robot arm 616-1 around the robot 616.
04, CMP section 605, lid plating tank 612, drying tank 60
8 and the load / unload unit 617 are arranged to constitute one device. A semiconductor substrate carry-in unit 601 and a carry-out unit 609 are disposed adjacent to the load / unload unit 617.

In the substrate processing apparatus for semiconductor substrate wiring having the above structure, the semiconductor substrate on which the wiring is not plated is loaded / unloaded from the carry-in portion 601 of the semiconductor substrate.
7, the semiconductor substrate is transferred to the robot arm 616-
1 is received and transferred to a copper plating tank 602, where a copper plating layer is formed on the surface of the semiconductor substrate including the wiring portion including wiring grooves and wiring holes. The semiconductor substrate on which the copper plating layer is formed is CMP by the robot arm 616-1.
Then, the excess CMP layer on the surface of the semiconductor substrate W is removed, leaving the copper plating layer formed in the wiring portion including the wiring groove and the wiring hole from the copper plating layer in the CMP portion 605.

The semiconductor substrate from which the excess copper plating layer on the surface is removed is washed by the robot arm 616-1 in the water washing tank 60.
After being transferred to No. 4 and washed with water, it is transferred to a pretreatment tank 611, and pretreatment before cover plating is performed in the pretreatment tank 611. The semiconductor substrate after the pretreatment is transferred to the cover plating tank 612 by the robot arm 616-1, and is protected on the copper plating layer formed in the wiring portion including the wiring groove and the wiring hole in the cover plating tank 612. Form a film. The semiconductor substrate on which the protective film is formed is the robot arm 6
16-1 transfers to a water washing tank 604, where it is washed with water, is then transferred to a drying tank 608, is dried, and is then transferred to a load / unload unit 617. The semiconductor substrate on which the wiring plating has been completed is transferred to the carry-out section 609.

FIG. 13 is a diagram showing a planar structure of another semiconductor substrate processing apparatus. This semiconductor substrate processing apparatus includes a load / unload unit 701, a copper plating unit 702, a first robot 703, a third cleaning machine 704, a reversing machine 705,
Inversion machine 706, second cleaning machine 707, second robot 70
8, a first cleaning machine 709, a first polishing device 710 and a second polishing device 711 are arranged.
In the vicinity of the first robot 703, a pre- and post-plating film thickness measuring device 712 for measuring the film thickness before and after plating, and a dry film thickness measuring device 7 for measuring the film thickness of the semiconductor substrate W in a dry state after polishing.
13 are arranged.

First polishing device (polishing unit) 7
10 is a polishing table 710-1 and a top ring 710.
-2, top ring head 710-3, film thickness measuring machine 71
It is equipped with 0-4 and pushers 710-5. The second polishing device (polishing unit) 711 includes a polishing table 711-1, a top ring 711-2, a top ring head 711-3, a film thickness measuring machine 711-4, and a pusher 711-5.

A loading / unloading section 701 is provided with a cassette 701-1 containing a semiconductor substrate W having contact holes and wiring grooves formed therein and having a seed layer formed thereon.
Place it on the load port. The first robot 703 takes out the semiconductor substrate W from the cassette 701-1 and carries it into the copper plating unit 702 to form a copper plating film. At that time, the film thickness of the seed layer is measured by the film thickness measuring device before and after plating 712. The copper plating film is formed by first performing hydrophilic treatment on the surface of the semiconductor substrate W and then performing copper plating. After the copper plating film is formed, the copper plating unit 702 performs rinsing or cleaning. If you have time, you can dry it.

The first robot 703 uses the copper plating unit 7
When the semiconductor substrate W is taken out of No. 02, the film thickness of the copper plating film is measured by the film thickness measuring device before and after plating 712. The measurement result is recorded as recording data of the semiconductor substrate in a recording device (not shown), and the copper plating unit 70 is used.
It is also used to judge 2 abnormalities. After the film thickness is measured, the first robot 703 transfers the semiconductor substrate W to the reversing machine 705 and reverses it (the surface on which the copper plating film is formed faces down). Polishing by the first polishing device 710 and the second polishing device 711 includes a series mode and a parallel mode. The series mode polishing will be described below.

The series mode polishing is polishing in which the primary polishing is performed by the polishing device 710 and the secondary polishing is performed by the polishing device 711. The second robot 708 picks up the semiconductor substrate W on the reversing device 705, and places the semiconductor substrate W on the pusher 710-5 of the polishing device 710. The top ring 710-2 adsorbs the semiconductor substrate W on the pusher 710-5, abuts and presses the copper plating film formation surface of the semiconductor substrate W against the polishing surface of the polishing table 710-1 to perform the primary polishing. In the primary polishing, the copper plating film is basically polished. The polishing surface of the polishing table 710-1 is
It is made of foamed polyurethane such as IC1000, or one in which abrasive grains are fixed or impregnated. The copper plating film is polished by the relative movement between the polishing surface and the semiconductor substrate W.

After completion of polishing the copper plating film, the top ring 7
At 10-2, the semiconductor substrate W is returned onto the pusher 710-5. The second robot 708 picks up the semiconductor substrate W and puts it in the first cleaning machine 709. At this time, pusher 7
There is a case where a chemical solution is sprayed on the front surface and the back surface of the semiconductor substrate W on 10-5 to remove particles or make them difficult to stick.

After the cleaning is completed in the first cleaning machine 709, the semiconductor substrate W is picked up by the second robot 708, and the semiconductor substrate W is placed on the pusher 711-5 of the second polishing device 711. The top ring 711-2 adsorbs the semiconductor substrate W on the pusher 711-5,
The surface on which the barrier layer is formed is brought into contact with and pressed against the polishing surface of the polishing table 711-1 to perform secondary polishing. In this secondary polishing, the barrier layer is polished. However, in some cases, the copper film and oxide film remaining after the above primary polishing are also polished.

The polishing surface of the polishing table 711-1 is IC
It is made of foamed polyurethane such as 1000, or one in which abrasive grains are fixed or impregnated, and is polished by relative movement between the polishing surface and the semiconductor substrate W. At this time, silica, alumina, ceria, or the like is used for the abrasive grains or the slurry. The chemical solution is adjusted depending on the type of film to be polished.

The end point of the secondary polishing is detected by measuring the film thickness of the barrier layer using an optical film thickness measuring device and detecting the film thickness becoming 0 or the surface of the insulating film made of SiO _2. To do.
Further, as the film thickness measuring device 711-4 provided in the vicinity of the polishing table 711-1, a film thickness measuring device with an image processing function is used to measure the oxide film and leave it as a processing record of the semiconductor substrate W or 2 It is determined whether or not the semiconductor substrate W after the next polishing can be transferred to the next step. Further, if the secondary polishing end point has not been reached, re-polishing is performed, and if polishing is performed beyond the specified value due to some abnormality, semiconductor substrate processing is performed so that the next polishing is not performed so that defective products are not increased. Stop the device.

After completion of secondary polishing, top ring 711-2
Then, the semiconductor substrate W is moved to the pusher 711-5. The semiconductor substrate W on the pusher 711-5 is picked up by the second robot 708. At this time, pusher 711-
In some cases, the chemical solution may be sprayed onto the front surface and the back surface of the semiconductor substrate W to remove particles or make it hard to stick.

The second robot 708 carries the semiconductor substrate W into the second cleaning machine 707 and cleans it. Second washing machine 70
The configuration of 7 is also the same as that of the first cleaning machine 709. The surface of the semiconductor substrate W is scrub-cleaned with a PVA sponge roll using a cleaning liquid obtained by adding a surfactant, a chelating agent, and a pH adjusting agent to pure water, mainly for removing particles. On the back surface of the semiconductor substrate W, from the nozzle to the DHF
Etc., a strong chemical solution is ejected to etch the diffused copper, or if there is no problem of diffusion, scrub cleaning with a PVA sponge roll is performed using the same chemical solution as the surface.

After the cleaning is completed, the semiconductor substrate W is picked up by the second robot 708, transferred to the reversing machine 706, and reversed by the reversing machine 706. The inverted semiconductor substrate W is picked up by the first robot 703 and placed in the third cleaning machine 704. In the third cleaning machine 704, the surface of the semiconductor substrate W is cleaned by jetting megasonic water excited by ultrasonic vibration. At that time, deionized water is mixed with a surfactant, a chelating agent, p
The surface of the semiconductor substrate W may be washed with a known pencil-type sponge using a washing liquid containing an H adjusting agent. afterwards,
The semiconductor substrate W is dried by spin drying.

When the film thickness is measured by the film thickness measuring device 711-4 provided in the vicinity of the polishing table 711-1 as described above, the film thickness is directly stored in the cassette mounted on the unload port of the load / unload unit 701. Accommodate.

FIG. 14 is a diagram showing a planar structure of another semiconductor substrate processing apparatus. FIG. 13 of this semiconductor substrate processing apparatus
13 is different from the semiconductor substrate processing apparatus shown in FIG. 13 in that instead of the copper plating unit 702 shown in FIG.
This is the point where 50 is provided.

The cassette 701-1 containing the semiconductor substrate W on which the copper film is formed is placed on the load / unload unit 701. The semiconductor substrate W is taken out of the cassette 701-1 and conveyed to the first polishing device 710 or the second polishing device 711, where the surface of the copper film is polished. After completion of this polishing, the semiconductor substrate W is conveyed to the first cleaning machine 709 and cleaned.

The semiconductor substrate W cleaned by the first cleaning machine 709 is transferred to the lid plating unit 750, where a protective film is formed on the surface of the copper plating film, whereby the copper plating film is oxidized in the atmosphere. Is prevented. The lid-plated semiconductor substrate W is transferred from the lid plating unit 750 to the second cleaning machine 707 by the second robot 708, where it is washed with pure water or deionized water. The semiconductor substrate W after the cleaning is returned to the cassette 701-1 placed on the load / unload unit 701.

FIG. 15 is a diagram showing a plane structure of still another semiconductor substrate processing apparatus. This semiconductor substrate processing apparatus is different from the semiconductor substrate processing apparatus shown in FIG. 14 in that the annealing unit 75 is used instead of the first cleaning machine 709 shown in FIG.
This is the point where 1 is provided.

As described above, the polishing is performed by the first polishing apparatus 710 or the second polishing apparatus 711,
The semiconductor substrate W cleaned by the second cleaning machine 707 is transported to the lid plating unit 750, where the surface of the copper plating film is subjected to lid plating. The lid-plated semiconductor substrate W is transferred from the lid plating unit 750 to the third cleaning machine 704 by the first robot 703, and is cleaned there.

The semiconductor substrate W cleaned by the first cleaning machine 709 is transferred to the annealing unit 751 and annealed there. As a result, the copper plating film is alloyed to improve the electron migration resistance of the copper plating film. The annealed semiconductor substrate W is conveyed from the annealing unit 751 to the second cleaning machine 707, where it is cleaned with pure water or deionized water. The semiconductor substrate W after the cleaning is returned to the cassette 701-1 placed on the load / unload unit 701.

FIG. 16 is a diagram showing another planar arrangement configuration of the substrate processing apparatus. In FIG. 16, the parts given the same reference numerals as those in FIG. 13 indicate the same or corresponding parts. This substrate polishing apparatus is arranged so as to approach the first polishing apparatus 710 and the second polishing apparatus 711 and to pusher indexer 72.
5, the third cleaning machine 704 and the copper plating unit 70 are arranged.
2, substrate mounting tables 721 and 722 are arranged respectively, robots 723 are arranged near the first cleaning machine 709 and the third cleaning machine 704, and a robot 724 is arranged near the second cleaning machine 707 and the copper plating unit 702. Further, a dry state film thickness measuring device 713 is arranged in the vicinity of the load / unload unit 701 and the first robot 703.

In the substrate processing apparatus having the above structure, the first robot 703 takes out the semiconductor substrate W from the cassette 701-1 mounted on the load port of the loading / unloading unit 701, and measures the dry film thickness measuring machine 713. After the film thicknesses of the barrier layer and the seed layer are measured with, the semiconductor substrate W is placed on the substrate platform 721. When the dry film thickness measuring instrument 713 is provided in the hand of the first robot 703, the film thickness is measured there and placed on the substrate platform 721. The second robot 723 transfers the semiconductor substrate W on the substrate platform 721 to the copper plating unit 702 and forms a copper plating film. After the copper plating film is formed, the film thickness of the copper plating film is measured by a film thickness measuring device before and after plating 712. Then, the second robot 723 transfers the semiconductor substrate W to the pusher indexer 725 and mounts it thereon.

[Series Mode] In the series mode,
The top ring head 710-2 adsorbs the semiconductor substrate W on the pusher indexer 725, and the polishing table 71
The semiconductor substrate W is transferred to 0-1 and the semiconductor substrate W is pressed against the polishing surface on the polishing table 710-1 to perform polishing. The end point of polishing is detected by the same method as described above, and the semiconductor substrate W after polishing is finished.
Is transferred to and mounted on the pusher indexer 725 by the top ring head 710-2. Second robot 723
Then, the semiconductor substrate W is taken out, carried into the first cleaning machine 709 and cleaned, and subsequently transferred to the pusher indexer 725 and mounted.

The top ring head 711-2 adsorbs the semiconductor substrate W on the pusher indexer 725, transfers it to the polishing table 711-1, and presses the semiconductor substrate W against the polishing surface to perform polishing. The end point of polishing is detected by the same method as described above, and the semiconductor substrate W after completion of polishing is pushed by the top ring head 711-2 by the pusher indexer 72.
It is transferred to 5 and mounted. The third robot 724 picks up the semiconductor substrate W, measures the film thickness with the film thickness measuring machine 726, and then carries it into the second cleaning machine 707 and cleans it. Then the third
It is carried into the cleaning machine 704, where it is cleaned and then dried by spin dry, and then the semiconductor substrate W is picked up by the third robot 724 and placed on the substrate platform 722.

[Parallel Mode] In the parallel mode,
The top ring head 710-2 or 711-2 adsorbs the semiconductor substrate W on the pusher indexer 725, transfers it to the polishing table 710-1 or 711-1, and the polishing surface on the polishing table 710-1 or 711-1. Then, the semiconductor substrate W is pressed and polished. After the film thickness is measured, the semiconductor substrate W is picked up by the third robot 724 and placed on the substrate platform 722.

The first robot 703 is equipped with a substrate mounting table 722.
The upper semiconductor substrate W is transferred to the dry film thickness measuring machine 713, and after measuring the film thickness, it is returned to the cassette 701-1 of the loading / unloading unit 701.

FIG. 17 is a diagram showing another planar arrangement configuration of the substrate processing apparatus. This substrate processing apparatus is a substrate processing apparatus that forms a seed layer and a copper plating film on a semiconductor substrate W on which a seed layer is not formed and then polishes the circuit wiring to form circuit wiring.

In this substrate polishing apparatus, a pusher indexer 725 is arranged close to the first polishing apparatus 710 and the second polishing apparatus 711, and the second cleaning machine 707 is arranged.
The substrate mounting tables 721 and 722 are arranged near the seed layer deposition unit 727 and the seed layer deposition unit 727, respectively.
Robot 72 approaching 27 and copper plating unit 702
3, a robot 724 is arranged in the vicinity of the first cleaning machine 709 and the second cleaning machine 707, and a dry film thickness measuring machine 713 is arranged in the vicinity of the loading / unloading section 701 and the first robot 703. ing.

The cassette 70 placed on the load port of the load / unload unit 701 by the first robot 703.
The semiconductor substrate W on which the barrier layer is formed is taken out from 1-1, and is placed on the substrate platform 721. Next, the second robot 723 uses the seed layer deposition unit 72 for the semiconductor substrate W.
It is conveyed to 7 and a seed layer is formed into a film. The seed layer is formed by electroless plating. The second robot 723 measures the film thickness measuring device 71 before and after plating the semiconductor substrate on which the seed layer is formed.
At 2, measure the thickness of the seed layer. After the film thickness is measured, it is carried into the copper plating unit 702 to form a copper plating film.

After forming the copper plating film, the film thickness is measured,
Transfer to pusher indexer 725. The top ring 710-2 or 711-2 adsorbs the semiconductor substrate W on the pusher indexer 725, and the polishing table 71
Transfer to 0-1 or 711-1 and polish. After polishing, the top ring 710-2 or 711-2 transfers the semiconductor substrate W to the film thickness measuring device 710-4 or 711-4, measures the film thickness, and transfers the semiconductor substrate W to the pusher indexer 725 for mounting.

Next, the third robot 724 picks up the semiconductor substrate W from the pusher indexer 725,
It is carried into the washing machine 709. The third robot 724 is the first
Picking up the cleaned semiconductor substrate W from the cleaning machine 709,
The semiconductor substrate that has been carried into the second cleaning machine 707, washed and dried is placed on the substrate platform 722. Next, the first robot 703 picks up the semiconductor substrate W, measures the film thickness with the dry film thickness measuring machine 713, and places the cassette 701-1 mounted on the unload port of the load / unload unit 701.
To store.

Also in the substrate processing apparatus shown in FIG. 17, a barrier layer, a seed layer, and a copper plating film are formed on the semiconductor substrate W in which the contact holes or grooves of the circuit pattern are formed, and polished to form the circuit wiring. can do.

The cassette 701-1 containing the semiconductor substrate W before the formation of the barrier layer is placed on the load port of the load / unload unit 701. Then, the first robot 703
Then, the semiconductor substrate W is taken out from the cassette 701-1 placed on the load port of the load / unload unit 701 and placed on the substrate platform 721. Next, the second robot 723 forms the semiconductor substrate W on the seed layer deposition unit 727.
And the barrier layer and the seed layer are formed. The barrier layer and the seed layer are formed by electroless plating. The second robot 723 measures the film thickness of the barrier layer and the seed layer formed on the semiconductor substrate W with the film thickness measuring device before and after plating 712. After the film thickness is measured, it is carried into the copper plating unit 702 to form a copper plating film.

FIG. 18 is a diagram showing another planar arrangement configuration of the substrate processing apparatus. This substrate processing apparatus includes a barrier layer film forming unit 811, a seed layer film forming unit 812, a plating unit 813, an annealing unit 814, a first cleaning unit 815, a bevel / back surface cleaning unit 816, a lid plating unit 817, and a second cleaning unit. 818, first aligner / film thickness measuring instrument 841, second aligner / film thickness measuring instrument 842, first substrate reversing machine 843, second substrate reversing machine 84
4, substrate temporary placing table 845, third film thickness measuring device 846, load / unload unit 820, first polishing device 82
1, second polishing device 822, first robot 83
In this configuration, the first robot 2, the second robot 832, the third robot 833, and the fourth robot 834 are arranged. The film thickness measuring devices 841, 842 and 846 are units, and can be replaced because they have the same size as the front dimension of other units (units for plating, cleaning, annealing, etc.).

In this example, the barrier layer deposition unit 811
Is an electroless Ru plating device and a seed layer film forming unit 81.
2 is an electroless copper plating device, and the plating unit 813 is
An electrolytic plating apparatus can be used.

FIG. 19 is a flow chart showing the flow of each step in this substrate processing apparatus. Each process in this apparatus will be described according to this flowchart. First, the semiconductor substrate taken out from the cassette 820a placed on the load / unload unit 820 by the first robot 831 is placed inside the first aligner / film thickness measuring unit 841 with the surface to be plated facing up. Here, in order to determine the reference point of the position for measuring the film thickness, after performing notch alignment for film thickness measurement, film thickness data of the semiconductor substrate before the copper film formation is obtained.

Next, the semiconductor substrate is the first robot 831.
Thus, the film is conveyed to the barrier layer film forming unit 811. The barrier layer forming unit 811 is a device for forming a barrier layer on a semiconductor substrate by electroless Ru plating, and forms Ru as a copper diffusion preventing film on an interlayer insulating film (eg, SiO ₂ ) of the semiconductor device. . The semiconductor substrate discharged through the washing and drying steps is conveyed to the first aligner / film thickness measuring unit 841 by the first robot 831 and the film thickness of the semiconductor substrate, that is, the film thickness of the barrier layer is measured.

The semiconductor substrate whose film thickness has been measured is carried into the seed layer forming unit 812 by the second robot 832, and the seed layer is formed on the barrier layer by electroless copper plating. The semiconductor substrate discharged through the cleaning and drying steps is transferred to the second aligner / film thickness measuring device 842 to determine the notch position before being transferred to the plating unit 813 which is the impregnation plating unit by the second robot 832. It is transferred and the notch for copper plating is aligned. Here, the film thickness of the semiconductor substrate before forming the copper film may be remeasured, if necessary.

The semiconductor substrate on which the notch alignment has been completed is carried to the plating unit 813 by the third robot 833 and is subjected to copper plating. The semiconductor substrate discharged through the cleaning and drying steps is conveyed by the third robot 833 to the bevel / back surface cleaning unit 816 in order to remove an unnecessary copper film (seed layer) at the end of the semiconductor substrate. In the bevel / back surface cleaning unit 816, the bevel is etched for a preset time, and the copper attached to the back surface of the semiconductor substrate is cleaned with a chemical solution such as hydrofluoric acid. At this time, before transporting to the bevel / back surface cleaning unit 816,
The film thickness of the semiconductor substrate is measured by the second aligner / film thickness measuring device 842 to obtain the value of the copper film thickness formed by plating, and the bevel etching time is arbitrarily changed according to the result. You may etch. The region to be etched by bevel etching is a region where the circuit is not formed in the peripheral portion of the substrate or a region where the circuit is not finally used as a chip. This area includes the bevel portion.

Cleaning with the bevel / back surface cleaning unit 816,
The semiconductor substrate discharged through the drying process is conveyed to the substrate reversing machine 843 by the third robot 833, reversed by the substrate reversing machine 843, and the surface to be plated is turned downward, and then the fourth robot 834. It is put into the annealing unit 814 to stabilize the wiring part. The second aligner / film thickness measuring unit 84 before and / or after the annealing treatment
Then, the film thickness of the copper film formed on the semiconductor substrate is measured. Then, the semiconductor substrate is carried into the first polishing apparatus 821 by the fourth robot 834, and the copper layer and the seed layer of the semiconductor substrate are polished.

At this time, although desired abrasive grains are used, in order to prevent dishing and to obtain flatness of the surface,
Fixed abrasive grains can also be used. After the completion of the first polishing, the semiconductor substrate is transferred to the first cleaning unit 815 by the fourth robot 834 and cleaned. This wash is
This is scrub cleaning in which a roll having a length substantially the same as the diameter of the semiconductor substrate is arranged on the front surface and the back surface of the semiconductor substrate, and the semiconductor substrate and the roll are rotated and purified water or deionized water is caused to flow.

After the completion of the first cleaning, the semiconductor substrate is carried into the second polishing device 822 by the fourth robot 834, and the barrier layer on the semiconductor substrate is polished. On this occasion,
Although desired abrasive grains or the like are used, fixed abrasive grains may be used to prevent dishing and to obtain flatness of the surface. After the second polishing is completed, the semiconductor substrate is again removed by the fourth robot 834 from the first cleaning unit 815.
It is transported to and scrubbed. After the cleaning is completed, the semiconductor substrate is transferred to the second substrate reversing machine 84 by the fourth robot 834.
4 and then inverted, the surface to be plated is directed upward, and further the third robot 833 causes the temporary substrate holder 845.
Placed in.

The semiconductor substrate is transferred from the temporary substrate holder 845 to the lid plating unit 817 by the second robot 832, and nickel-boron plating is performed on the copper surface for the purpose of preventing copper from being oxidized by the atmosphere. The semiconductor substrate plated with the lid is covered by the second robot 832 in the lid plating unit 81.
It is carried into the third film thickness measuring device 846 from 7 and the copper film thickness is measured. Then, the semiconductor substrate is carried into the second cleaning unit 818 by the first robot 831 and cleaned with pure water or deionized water. The semiconductor substrate after cleaning is loaded / unloaded by the first robot 831.
It is returned to the inside of the cassette 820a placed on the 20.

The aligner / film thickness measuring device 841 and the aligner / film thickness measuring device 842 perform positioning of the substrate notch and measurement of the film thickness.

The bevel / back surface cleaning unit 816 can perform edge (bevel) copper etching and back surface cleaning at the same time, and can suppress the growth of a copper natural oxide film on a circuit forming portion on the substrate surface. FIG. 20 shows a schematic view of the bevel / back surface cleaning unit 816. As shown in FIG. 20, the bevel / back surface cleaning unit 816 is located inside a bottomed cylindrical waterproof cover 920, and spin-chucks the substrate W face-up at a plurality of positions along the circumferential direction of its peripheral edge. A substrate holding portion 922 which is held horizontally by 921 and is rotated at a high speed, and a center nozzle 92 which is arranged substantially above the central portion on the front surface side of the substrate W held by the substrate holding portion 922.
4 and an edge nozzle 926 arranged above the peripheral edge of the substrate W. The center nozzle 924 and the edge nozzle 926 are arranged facing downward, respectively. Further, a back nozzle 928 is arranged facing upward and is positioned below a substantially central portion on the back surface side of the substrate W. The edge nozzle 926 is configured to be movable in the diameter direction and the height direction of the substrate W.

The moving width L of the edge nozzle 926 can be arbitrarily positioned from the outer peripheral end surface of the substrate toward the central portion, and is adjusted according to the size of the substrate W and the purpose of use.
Enter the set value. Usually, the edge cut width C is set in the range of 2 mm to 5 mm, and if the amount of the liquid flowing from the back surface to the front surface is equal to or higher than the number of rotations, the copper film within the set cut width C is removed. be able to.

Next, a cleaning method by this cleaning device will be described. First, with the substrate held horizontally by the substrate holding unit 922 via the spin chuck 921, the semiconductor substrate W is horizontally rotated integrally with the substrate holding unit 922. In this state, the acid solution is supplied from the center nozzle 924 to the central portion on the front surface side of the substrate W. The acid solution may be a non-oxidizing acid, for example, hydrofluoric acid, hydrochloric acid, sulfuric acid, citric acid, oxalic acid, or the like. On the other hand, the oxidant solution is continuously or intermittently supplied from the edge nozzle 926 to the peripheral portion of the substrate W. As the oxidant solution, one of ozone water, hydrogen peroxide water, nitric acid water, sodium hypochlorite water, or the like is used, or a combination thereof is used.

As a result, in the region of the edge cut width C at the peripheral edge of the semiconductor substrate W, the copper film and the like formed on the upper surface and the end surface are rapidly oxidized by the oxidant solution and simultaneously supplied from the center nozzle 924 to the substrate. Is dissolved and removed by an acid solution that spreads over the entire surface. Thus, by mixing the acid solution and the oxidizer solution at the peripheral edge of the substrate, a sharper etching profile can be obtained as compared with the case where the mixed water of them is supplied in advance from the nozzle. At this time, the copper etching rate is determined by their concentrations. Further, when a natural oxide film of copper is formed on the circuit formation portion on the surface of the substrate, this natural oxide is immediately removed by an acid solution that spreads over the entire surface of the substrate as the substrate rotates, and grows. There is no such thing. The center nozzle 924
After stopping the supply of the acid solution from the edge nozzle 926
By stopping the supply of the oxidant solution from, the silicon exposed on the surface can be oxidized and the adhesion of copper can be suppressed.

On the other hand, the oxidant solution and the silicon oxide film etching agent are simultaneously or alternately supplied from the back nozzle 928 to the central portion of the back surface of the substrate. As a result, the copper or the like that is metallically attached to the back surface of the semiconductor substrate W can be removed together with the silicon of the substrate by oxidizing with the oxidizing agent solution and etching with the silicon oxide film etching agent. It should be noted that this oxidant solution is preferably the same as the oxidant solution supplied to the surface in order to reduce the kinds of chemicals. Further, hydrofluoric acid can be used as the silicon oxide film etching agent, and the types of chemicals can be reduced by using hydrofluoric acid for the acid solution on the surface side of the substrate. Thus, if the supply of the oxidant is stopped first, a hydrophobic surface is obtained, and if the solution of the etchant is stopped first, a saturated surface (hydrophilic surface) is obtained, and the back surface is adjusted according to the demand of the subsequent process. You can also

Thus, the acid solution, that is, the etching solution is supplied to the substrate to remove the metal ions remaining on the surface of the substrate W, and then pure water is further supplied to replace the pure water to remove the etching solution. Then, spin drying is performed. In this way, the edge cut width C of the peripheral portion of the semiconductor substrate surface is
This process can be completed within 80 seconds, for example, by simultaneously removing the copper film inside and removing the copper contamination on the back surface. In addition, the edge cut width of the edge is arbitrary (2 mm to 5 mm
However, the time required for etching does not depend on the cut width.

Performing the annealing treatment before the CMP step after plating has a good effect on the subsequent CMP treatment and the electrical characteristics of the wiring. When the surface of a wide wiring (unit of several μm) was observed after the CMP process without annealing, many defects such as microvoids were found, and the electrical resistance of the entire wiring was increased. Increase was improved. Since no void was found in the thin wiring without annealing, it is considered that the degree of grain growth is involved. In other words, grain growth does not occur easily with thin wiring, but with ultra-fine wiring that is invisible to the SEM (scanning electron microscope) in the plating film in the process of grain growth accompanying annealing treatment with grain growth in wide wiring. It can be inferred that the pores gathered and moved upwards, resulting in the formation of microvoid depressions in the upper portion of the wiring.
As the annealing conditions of the annealing unit, hydrogen is added to the gas atmosphere (2% or less), and the temperature is 300 to 400 ° C.
The above effect was obtained in about 1 to 5 minutes.

21 and 22 show the annealing unit 8
14 is shown. This annealing unit 814
Is located inside a chamber 1002 having a gate 1000 for loading and unloading the semiconductor substrate W.
Is heated to, for example, 400 ° C. hot plate 1004
Then, cool plates 1006 for cooling the semiconductor substrate W by flowing cooling water, for example, are arranged above and below. In addition, a plurality of elevating pins 1008 that penetrate the inside of the cool plate 1006 and extend in the up-down direction and that mount and hold the semiconductor substrate W are vertically arranged. Further, a gas introducing pipe 1010 for introducing an oxidation preventing gas between the semiconductor substrate W and the hot plate 1008 during annealing, and a gas introduced through the gas introducing pipe 1010 and flowing between the semiconductor substrate W and the hot plate 1004. A gas exhaust pipe 1012 for exhausting the gas is arranged at a position facing each other with the hot plate 1004 interposed therebetween.

The gas introducing pipe 1010 has a filter 1 inside.
N ₂ flowing in the N ₂ gas introduction passage 1016 having 014a
And gas and H ₂ gas flowing through the H ₂ gas introduction passage 1018 having a filter 1014b internally mixed in the mixer 1020 is connected to a mixed gas introduction passage 1022 mixed gas flows in the mixer 1020 .

As a result, the semiconductor substrate W carried into the chamber 1002 through the gate 1000 is held by the lift pins 1008, and the lift pins 1008 are held by the lift pins 1008.
08 holding semiconductor substrate W and hot plate 1004
Is increased until the distance between and becomes, for example, about 0.1 to 1.0 mm. In this state, the semiconductor substrate W is heated to, for example, 400 ° C. via the hot plate 1004, and at the same time, an oxidation preventing gas is introduced from the gas introducing pipe 1010 so that the semiconductor substrate W and the hot plate 1004 are separated from each other. Is exhausted from the gas exhaust pipe 1012. As a result, the semiconductor substrate W is annealed while preventing oxidation, and this annealing is continued for, for example, several tens of seconds to 60 seconds to complete the annealing. The substrate heating temperature is selected to be 100 to 600 ° C.

After the annealing is completed, the elevating pins 1008 are lowered until the distance between the semiconductor substrate W held by the elevating pins 1008 and the cool plate 1006 becomes, for example, about 0 to 0.5 mm. In this state, cool plate 100
By introducing cooling water into the semiconductor substrate 6, the semiconductor substrate is cooled until the temperature of the semiconductor substrate W becomes 100 ° C. or lower, for example, for about 10 to 60 seconds, and the semiconductor substrate after completion of this cooling is transported to the next step. .

In this example, as the oxidation preventing gas, a mixed gas of N ₂ gas and H ₂ gas of several% is flowed, but only N ₂ gas may be flowed. .

Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and various modifications are possible within the scope of the claims and the technical idea described in the specification and drawings. Can be modified. Note that any shape, structure, or material not directly described in the specification and drawings is within the scope of the technical idea of the present invention as long as the functions and effects of the present invention are exhibited.

For example, in the above embodiment, the rectifying box 50 is used.
Although a porous body is used as the porous body that constitutes the cathode side member 51 and the anode side member 55 that configure the above, a large number of fine punching hole-shaped openings are provided in the insulating resin plate (resin body). You may comprise. In the case of a porous body provided with punched hole-shaped openings, the pore diameter is 0.5 mm to 5.
0 mm, more preferably 1.0 mm to 4.0 mm, and the aperture ratio is 5% to 50%, further preferably 10% to 3
0% is preferable. However, since the pore size is larger than in the case of a porous body, there is a possibility that particles will be allowed to pass as compared to the case of a porous body, and a porous body that can maintain a fine pore size even if the aperture ratio is increased. Is more preferable. Further, a porous film made of resin may be used as the porous body.

In the above embodiments, the case where the present invention is applied to electrolytic plating has been described. However, by reversing the direction of current, that is, by using this apparatus as it is, the polarity of the power source is reversed to perform electrolytic etching. It can be used, in which case the uniformity of etching can be improved.

[0127]

As described in detail above, according to the present invention, there is an excellent effect that the electrolytic treatment of the surface of the substrate to be treated can be performed uniformly without any defect.

[Brief description of drawings]

FIG. 1 is a schematic sectional view of a plating apparatus according to an embodiment of the present invention.

FIG. 2 is a view showing a rectification box 50, and FIG.
2A is a schematic plan view, and FIG. 2B is a sectional view taken along the line AA of FIG.

FIG. 3 is a schematic configuration diagram of a fountain type plating apparatus.

FIG. 4 is a diagram showing a state of the surface of the plating solution Q when the substrate W is in contact with the solution.

FIG. 5 is a schematic configuration diagram of a horizontal jet plating apparatus.

FIG. 6 is a plan layout view showing a substrate processing apparatus.

7 is a diagram showing the flow of airflow in the substrate processing apparatus shown in FIG.

8 is a diagram showing a flow of air between respective areas of the substrate processing apparatus shown in FIG.

9 is an external view showing an example in which the substrate processing apparatus shown in FIG. 6 is arranged in a clean room.

FIG. 10 is a plan layout view showing another example of the substrate processing apparatus.

FIG. 11 is a plan layout view showing still another example of the substrate processing apparatus.

FIG. 12 is a plan layout view showing still another example of the substrate processing apparatus.

FIG. 13 is a plan layout view showing still another example of the substrate processing apparatus.

FIG. 14 is a plan layout view showing still another example of the substrate processing apparatus.

FIG. 15 is a plan layout view showing still another example of the substrate processing apparatus.

FIG. 16 is a plan layout view showing still another example of the substrate processing apparatus.

FIG. 17 is a plan layout view showing still another example of the substrate processing apparatus.

FIG. 18 is a plan layout view showing still another example of the substrate processing apparatus.

19 is a flowchart showing a flow of each process in the substrate processing apparatus shown in FIG.

FIG. 20 is a schematic view showing a bevel / back surface cleaning unit.

FIG. 21 is a vertical sectional front view showing an example of an annealing unit.

22 is a plan sectional view of FIG. 21. FIG.

FIG. 23 is a diagram showing an example of forming a copper wiring by copper plating in the order of steps.

[Explanation of symbols]

10 plating tank 13 Anode side plating solution discharge path 15 Side wall 16 perimeter wall 17 Overflow liquid recovery tank 19 Electric field concentration prevention member 20 Anode (other electrode) 30 substrate holder 50 rectification box 51 Cathode side member 53 openings 55 Anode side member 58 Gap 61 Spacer member 65 Plating solution injection nozzle (plating solution injection means) A1 substrate side area A2 Anode side area W substrate (substrate to be processed) S Plated surface Q plating solution (electrolytic solution)

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Kenya Tomioka             11-1 Haneda Asahi-cho, Ota-ku, Tokyo Co., Ltd.             Inside the EBARA CORPORATION (72) Inventor Mitsuro Honbo             11-1 Haneda Asahi-cho, Ota-ku, Tokyo Co., Ltd.             Inside the EBARA CORPORATION F term (reference) 4K024 AA09 AB08 BB12 BC10 CB13                       CB21 GA02 GA16                 4M104 BB04 DD52 DD75 DD78 FF16

Claims (6)

[Claims] 1. An electrolytic treatment is performed on a surface of a substrate to be processed by filling an electrolytic solution between a substrate to be processed having a contact point between one electrode of an anode and a cathode and the other electrode facing the substrate to be processed. In the electrolytic processing apparatus, in the electrolytic solution between the substrate to be processed and the other electrode, a box made of a porous body is injected into the inside of the electrolytic solution to each of the substrate to be processed and the other electrode. An electrolytic treatment apparatus, characterized in that a rectification box is provided through which a surface on the opposite side is penetrated and the electrolytic solution is shunted and sent toward both the substrate to be treated and the other electrode. 2. The porous body forming the rectifying box,
The electrolytic treatment apparatus according to claim 1, wherein the electrolytic treatment apparatus is formed of a porous body or a resin body having a large number of punched hole-shaped openings. 3. The rectifying box comprises a pair of plates made of a porous body facing each other with a gap therebetween, and an electrolyte injection means for injecting an electrolyte from a plurality of portions around the gap toward the center. The electrolytic treatment apparatus according to claim 1 or 2, wherein the electrolytic treatment apparatus is installed and configured. 4. A flow rate control structure in which the flow rate of the electrolytic solution in the central portion of the surface of the rectifying box facing the substrate to be processed is higher than the flow rate of the electrolytic solution in the peripheral portion. The electrolytic treatment apparatus according to claim 1, 2 or 3, wherein 5. The passing flow rate control structure makes the aperture ratio of the central portion of the surface of the rectification box on the side facing the substrate to be processed larger than the aperture ratio of the peripheral portion or the rectification box to be processed. The thickness of the central portion of the surface facing the substrate is made thinner than the thickness of the peripheral portion, or an opening is formed in the central portion of the surface of the rectifying box facing the substrate to be processed. The electrolytic treatment apparatus according to claim 4, wherein: 6. The substrate to be processed and the other electrode of the rectification box are arranged so that the shunt ratio of the electrolytic solution diverted from the rectification box toward both the substrate to be processed and the other electrode is a predetermined ratio. The electrolytic treatment apparatus according to any one of claims 1 to 5, wherein the porous bodies forming the respective surfaces facing each other have different aperture ratios and / or plate thicknesses.