JP2003243678A - Solar cell module and its manufacturing method - Google Patents
Solar cell module and its manufacturing methodInfo
- Publication number
- JP2003243678A JP2003243678A JP2002039292A JP2002039292A JP2003243678A JP 2003243678 A JP2003243678 A JP 2003243678A JP 2002039292 A JP2002039292 A JP 2002039292A JP 2002039292 A JP2002039292 A JP 2002039292A JP 2003243678 A JP2003243678 A JP 2003243678A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- cell module
- adhesive resin
- resin material
- crystalline semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 239000000853 adhesive Substances 0.000 claims abstract description 4
- 230000001070 adhesive effect Effects 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 37
- 239000004840 adhesive resin Substances 0.000 claims description 21
- 229920006223 adhesive resin Polymers 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 9
- 230000001681 protective effect Effects 0.000 claims description 5
- 229920001169 thermoplastic Polymers 0.000 claims 1
- 239000004416 thermosoftening plastic Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 230000003044 adaptive effect Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 10
- 238000000465 moulding Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 238000001816 cooling Methods 0.000 description 5
- -1 polyethylene Polymers 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- 229920009204 Methacrylate-butadiene-styrene Polymers 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 229930182556 Polyacetal Natural products 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004697 Polyetherimide Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical group C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 239000004699 Ultra-high molecular weight polyethylene Substances 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 229920006351 engineering plastic Polymers 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920001230 polyarylate Polymers 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920001601 polyetherimide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920006324 polyoxymethylene Polymers 0.000 description 2
- 229920001955 polyphenylene ether Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 229920000785 ultra high molecular weight polyethylene Polymers 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229920000800 acrylic rubber Polymers 0.000 description 1
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 1
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WWNGFHNQODFIEX-UHFFFAOYSA-N buta-1,3-diene;methyl 2-methylprop-2-enoate;styrene Chemical compound C=CC=C.COC(=O)C(C)=C.C=CC1=CC=CC=C1 WWNGFHNQODFIEX-UHFFFAOYSA-N 0.000 description 1
- MTAZNLWOLGHBHU-UHFFFAOYSA-N butadiene-styrene rubber Chemical compound C=CC=C.C=CC1=CC=CC=C1 MTAZNLWOLGHBHU-UHFFFAOYSA-N 0.000 description 1
- 229920006026 co-polymeric resin Polymers 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920013636 polyphenyl ether polymer Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229920002725 thermoplastic elastomer Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Roof Covering Using Slabs Or Stiff Sheets (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は太陽電池モジュール
及びその製造方法に係り、特に薄い半導体結晶基板から
なる太陽電池を備えた曲面構造の太陽電池モジュール、
及びそのモジュールの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell module and a method of manufacturing the same, and more particularly to a curved surface solar cell module including a solar cell made of a thin semiconductor crystal substrate,
And a method for manufacturing the module.
【０００２】[0002]
【従来の技術】太陽電池は、太陽光を受けて発電電力を
発生するものであるので、例えば曲面を有する屋根や円
柱状の構造物等の上に設置できることが好ましい。従来
から、曲面構造を有する面に太陽電池を配置し、太陽光
より発電電力を取り出す要望が存在した。このような、
曲面構造を有する場所に設置が可能な太陽電池は、例え
ばアモルファス太陽電池を曲面構造を有するシートに蒸
着することにより製造することが可能である。しかしな
がら、アモルファス太陽電池は、太陽光の発電電力への
変換効率が低く、比較的狭い面積で大きな発電電力を得
ようとするには問題があった。2. Description of the Related Art Since a solar cell receives sunlight to generate electric power, it is preferable that it can be installed on, for example, a roof having a curved surface or a columnar structure. Conventionally, there has been a demand for arranging a solar cell on a surface having a curved structure and extracting generated power from sunlight. like this,
A solar cell that can be installed in a place having a curved structure can be manufactured by, for example, depositing an amorphous solar cell on a sheet having a curved structure. However, the amorphous solar cell has a low conversion efficiency of sunlight into generated power, and has a problem in obtaining large generated power in a relatively small area.
【０００３】一方で、単結晶・多結晶シリコン基板を用
いた太陽電池は、良好な発電電力の変換効率が得られ
る。ところが、これらの太陽電池は一般にその厚さが厚
いため、曲げることが難しく、平板状の結晶性半導体基
板を用いた太陽電池モジュールが市場に供給されてい
る。しかしながら、このような変換効率の高い太陽電池
モジュールは平板状ではなく、曲面構造にも対応可能で
あると、その設置可能な領域が格段に増加する。On the other hand, a solar cell using a monocrystalline / polycrystalline silicon substrate can obtain good conversion efficiency of generated electric power. However, since these solar cells are generally thick, it is difficult to bend them, and solar cell modules using a flat crystalline semiconductor substrate have been supplied to the market. However, if such a solar cell module having high conversion efficiency is not flat and can be applied to a curved structure, the area where it can be installed is significantly increased.
【０００４】[0004]
【発明が解決しようとする課題】本発明は上述した事情
に鑑みて為されたもので、曲面構造に対応が可能で、高
い電力の変換効率が得られる太陽電池モジュール及びそ
の製造方法を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and provides a solar cell module capable of supporting a curved surface structure and capable of obtaining high power conversion efficiency, and a method of manufacturing the same. The purpose is to
【０００５】[0005]
【課題を解決するための手段】本発明の太陽電池モジュ
ールは、薄板状の半導体結晶基板を用い、該半導体結晶
基板を曲面構造を有する支持材に変形した状態で固定し
たことを特徴とする。即ち、金属薄板と、該薄板上に接
着剤を用いて固定された厚さが２００μｍ以下の結晶性
半導体基板からなる太陽電池を備えたことを特徴とす
る。The solar cell module of the present invention is characterized in that a thin plate-like semiconductor crystal substrate is used and the semiconductor crystal substrate is fixed to a supporting material having a curved structure in a deformed state. That is, it is characterized by including a thin metal plate and a solar cell composed of a crystalline semiconductor substrate having a thickness of 200 μm or less fixed on the thin plate with an adhesive.
【０００６】ここで、前記太陽電池の表面側には、透明
耐候性フィルムが貼着され、前記太陽電池の裏面側に
は、絶縁シートが前記金属薄板との間に配置されている
ことが好ましい。Here, it is preferable that a transparent weather-resistant film is attached to the front surface side of the solar cell, and an insulating sheet is arranged between the thin metal plate and the back surface side of the solar cell. .
【０００７】また、本発明の太陽電池モジュールの製造
方法は、透明なフィルム状の表面保護材と、接着用樹脂
材と、結晶性半導体基板からなる太陽電池と、フィルム
状の裏面絶縁シートと、接着用樹脂材と、金属薄板とを
サンドイッチ状に重ねて、加温圧着して積層した後に、
前記接着用樹脂材が軟化している状態で所要の曲面形状
となるように成形加工して、前記接着用樹脂材を硬化さ
せることにより、曲面構造を形成することを特徴とす
る。Further, the method for manufacturing a solar cell module of the present invention comprises a transparent film-shaped surface protective material, an adhesive resin material, a solar cell composed of a crystalline semiconductor substrate, and a film-shaped back insulating sheet. After stacking the adhesive resin material and the thin metal plate in a sandwich, and heating and pressure bonding to stack them,
It is characterized in that a curved surface structure is formed by molding and processing the adhesive resin material so as to have a required curved surface shape in a softened state and curing the adhesive resin material.
【０００８】上述した本発明によれば、太陽電池を構成
する半導体結晶基板が薄板状であっても、その厚みが例
えば２００μｍ以下と極めて薄いので、金属薄板の曲面
構造に合わせて変形して固定することが可能である。こ
れにより、太陽光の変換効率の高い半導体結晶基板を用
いて、曲面構造を有する太陽電池モジュールを形成する
ことができる。そして、太陽電池を構成する半導体結晶
基板を金属薄板に密着した状態で固定することで、電気
的特性に影響を及ぼすことなく上記曲面構造を安定に形
成することができる。According to the present invention described above, even if the semiconductor crystal substrate constituting the solar cell is a thin plate, its thickness is extremely thin, for example, 200 μm or less, so that it is deformed and fixed according to the curved structure of the metal thin plate. It is possible to This makes it possible to form a solar cell module having a curved structure by using a semiconductor crystal substrate having a high conversion efficiency of sunlight. Then, by fixing the semiconductor crystal substrate constituting the solar cell in a state in which the semiconductor crystal substrate is in close contact with the metal thin plate, the curved surface structure can be stably formed without affecting the electrical characteristics.
【０００９】[0009]
【発明の実施の形態】以下、本発明の実施の形態につい
て添付図面を参照しながら説明する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the accompanying drawings.
【００１０】図１は、本発明の実施形態の太陽電池モジ
ュールを示す。この太陽電池モジュール１０は、結晶性
半導体基板を用いた太陽電池１１が金属薄板１２上に密
着して固定され、全体として図示する曲面構造を有して
いる。太陽電池１１の表面側には、透明耐候性フィルム
からなる表面保護材１３が配置され、太陽電池１１の裏
面側の金属薄板１２との間には絶縁性樹脂シート１４が
配置されている。ここで、太陽電池１１は、厚さが２０
０μｍ以下のシリコン単結晶基板または多結晶基板が用
いられている。FIG. 1 shows a solar cell module according to an embodiment of the present invention. In this solar cell module 10, a solar cell 11 using a crystalline semiconductor substrate is adhered and fixed on a thin metal plate 12, and has a curved structure as a whole. A surface protective material 13 made of a transparent weather resistant film is arranged on the front surface side of the solar cell 11, and an insulating resin sheet 14 is arranged between the solar cell 11 and the thin metal plate 12 on the rear surface side. Here, the solar cell 11 has a thickness of 20.
A silicon single crystal substrate or a polycrystalline substrate of 0 μm or less is used.
【００１１】この結晶性半導体基板には、その内部にｐ
ｎ接合が設けられ、光を照射することでｐｎ接合に発電
電力が生じ、この出力が図示しない配線を介して取り出
される。この太陽電池１１は、結晶性半導体基板に設け
られたｐｎ接合により発電電力を出力するので、高い光
電変換効率が得られる。そして、厚さが２００μｍ以下
の比較的薄い結晶性半導体基板を用いることで、この基
板が変形性を有するので、図示するような例えば半円等
の円弧状の曲面構造を形成することが可能である。In this crystalline semiconductor substrate, p
An n-junction is provided, and by irradiating light, generated power is generated in the pn-junction, and this output is taken out via a wiring (not shown). Since the solar cell 11 outputs the generated power by the pn junction provided on the crystalline semiconductor substrate, high photoelectric conversion efficiency can be obtained. By using a relatively thin crystalline semiconductor substrate having a thickness of 200 μm or less, this substrate has deformability, and thus it is possible to form an arc-shaped curved surface structure such as a semicircle as shown in the drawing. is there.
【００１２】なお、このような比較的薄い結晶性半導体
基板を用いた太陽電池は、本出願人による特願平１１−
１２５０６４号、または特願２０００−２７５３１５号
特許出願にて開示された方法及び装置で作ることができ
る。また、図示の例では、単一の結晶性半導体基板を用
いているが、複数の結晶性半導体基板を用いて、これら
を配線により接続するようにしても勿論よい。A solar cell using such a relatively thin crystalline semiconductor substrate is disclosed in Japanese Patent Application No. 11-
No. 125064, or Japanese Patent Application No. 2000-275315. Further, although a single crystalline semiconductor substrate is used in the illustrated example, it is of course possible to use a plurality of crystalline semiconductor substrates and connect them by wiring.
【００１３】太陽電池１１を支持する金属薄板１２は、
例えば厚さが０．１−０．５ｍｍ程度のステンレス材か
らなる板体を用いることが好ましい。この金属薄板は、
形状に可塑性を有するものであり、前記金属薄板を所望
の形状にすることができる。太陽電池１１の表面を保護
する表面保護材１３は、厚さが５０−２００μｍ程度の
透明な耐候性フィルムを用いて形成されている。これに
より、太陽電池モジュールが風雨等にさらされても、こ
れを保護することができる。また、太陽電池１１の裏面
側の金属薄板１２との間には、同様に５０−２００μｍ
程度の厚さの絶縁性樹脂シートが配置され、これにより
太陽電池１１と金属薄板１２との間の電気的な絶縁が図
られている。The thin metal plate 12 supporting the solar cell 11 is
For example, it is preferable to use a plate body made of a stainless material having a thickness of about 0.1 to 0.5 mm. This sheet metal is
Since it has plasticity in shape, the thin metal plate can be formed into a desired shape. The surface protective material 13 that protects the surface of the solar cell 11 is formed using a transparent weather-resistant film having a thickness of about 50 to 200 μm. As a result, even if the solar cell module is exposed to wind and rain, it can be protected. Further, between the thin metal plate 12 on the back surface side of the solar cell 11 is 50-200 μm in the same manner.
An insulative resin sheet having a certain thickness is arranged to electrically insulate the solar cell 11 and the metal thin plate 12 from each other.
【００１４】表面保護材１３と、太陽電池１１と、絶縁
シート１４と、金属薄板１２との間は、熱硬化性の接着
用樹脂材を用いて固定され、全体として強固な太陽電池
モジュールが形成されている。金属薄板１２を太陽電池
１１と密着して用いることで、プレス等により成形加工
することで、太陽電池１１と共に塑性変形して安定した
曲面構造が得られる。そして、このような曲面対応に変
形加工を施しても、太陽電池の電気的特性に影響を及ぼ
さない。The surface protective material 13, the solar cell 11, the insulating sheet 14, and the thin metal plate 12 are fixed by using a thermosetting adhesive resin material to form a strong solar cell module as a whole. Has been done. When the thin metal plate 12 is used in close contact with the solar cell 11, it is plastically deformed together with the solar cell 11 by a molding process such as pressing, so that a stable curved surface structure is obtained. Further, even if the deformation processing is performed for such a curved surface, it does not affect the electrical characteristics of the solar cell.
【００１５】上述したように、この太陽電池モジュール
は、曲率半径が５０ｍｍ程度迄の曲面構造が得られる。
従って、例えば風車発電装置のポールや電柱などに配置
することが可能である。そして、このような場所に配置
することで、それらの建築物としての美観を損ねること
なく、高い発電効率で太陽光発電を行うことができる。
なお、この実施形態においては、半円形の太陽電池モジ
ュールの例について説明したが、上述したように曲率半
径が５０ｍｍ程度以上であれば、任意の曲面構造を形成
できるので、例えば屋根瓦等の形状に加工することが可
能である。即ち、設置場所に対応した任意の形状に加工
できる。As described above, this solar cell module can have a curved surface structure with a radius of curvature up to about 50 mm.
Therefore, for example, it can be arranged on a pole or a utility pole of the wind turbine generator. By arranging in such a place, it is possible to perform solar power generation with high power generation efficiency without impairing the aesthetics of those buildings.
In addition, in this embodiment, an example of a semi-circular solar cell module has been described. However, as described above, if the radius of curvature is about 50 mm or more, an arbitrary curved surface structure can be formed. It can be processed into That is, it can be processed into an arbitrary shape corresponding to the installation place.
【００１６】次に、この太陽電池モジュール１０の製造
方法について説明する。まず、図２（ａ）に示すよう
に、太陽電池モジュールを構成する材料の積層体を形成
する。最下層に、厚さが例えば０．１ｍｍ程度のステン
レス材のシート１２を配置する。そして、その上に例え
ばEVA（エチレンビニルアセテート）のようなシート状
の接着用樹脂材１６ａを配置する。そして、その上に厚
さが５０−２００μｍ程度のフッ素系材料により形成さ
れた絶縁樹脂シート１４を配置する。Next, a method of manufacturing the solar cell module 10 will be described. First, as shown in FIG. 2A, a laminated body of the materials forming the solar cell module is formed. The stainless steel sheet 12 having a thickness of, for example, about 0.1 mm is arranged as the lowermost layer. Then, a sheet-shaped adhesive resin material 16a such as EVA (ethylene vinyl acetate) is arranged thereon. Then, the insulating resin sheet 14 made of a fluorine-based material having a thickness of about 50 to 200 μm is arranged thereon.
【００１７】その上に、再び接着用樹脂材１６ｂを配置
し、その上に結晶性半導体基板からなる太陽電池１１を
配置する。更に、その上に再び接着用樹脂材１６ｃを配
置し、その上に厚さ５０−２００μｍ程度のフッ素系の
樹脂シートである表面耐候性シート１３を配置する。こ
こで、太陽電池１１の表面側に配置する耐候性フィルム
１３及び接着用樹脂材１６ｃは透明な材料が用いられ、
太陽電池への太陽光の入射を妨げないようにしている。The adhesive resin material 16b is again placed on the solar cell 11, and the solar cell 11 made of a crystalline semiconductor substrate is placed thereon. Further, the adhesive resin material 16c is again arranged thereon, and the surface weather-resistant sheet 13 which is a fluorine resin sheet having a thickness of about 50 to 200 μm is arranged thereon. Here, a transparent material is used for the weather resistant film 13 and the adhesive resin material 16c arranged on the front surface side of the solar cell 11,
It does not prevent the sunlight from entering the solar cell.
【００１８】次に、図２（ｂ）に示すように、太陽電池
を構成する各材料の積層体を加温圧着して太陽電池モジ
ュールの積層体を形成する。この加温圧着は、真空雰囲
気下で８０〜２００℃程度に加熱した金属板２０ａ，２
０ｂで、上下から或いは一方から挟み込むことにより行
う。この真空加温圧着により、接着用樹脂材１６ａ，１
６ｂ，１６ｃが軟化して、表面保護シート１３と太陽電
池１１と裏面絶縁シート１４と金属薄板１２とをそれぞ
れ相互に接着する。そして、真空雰囲気下でこの加温圧
着を行うため、各材料（シート）間に含まれている気泡
が脱気され、各材料（シート）間が密着する。Next, as shown in FIG. 2B, a laminated body of each material constituting the solar cell is heated and pressure bonded to form a laminated body of the solar cell module. This heating and pressure bonding is performed by heating the metal plates 20a, 2a heated to about 80 to 200 ° C. in a vacuum atmosphere.
With 0b, it is performed by sandwiching from above or below or from one side. By this vacuum heating and pressure bonding, the adhesive resin materials 16a, 1
6b and 16c are softened, and the surface protection sheet 13, the solar cell 11, the back surface insulating sheet 14, and the metal thin plate 12 are bonded to each other. Then, since this heating and pressure bonding is performed in a vacuum atmosphere, the air bubbles contained between the respective materials (sheets) are degassed and the respective materials (sheets) are brought into close contact with each other.
【００１９】次に、図２（ｃ）に示すように、所要の曲
面形状を有する２枚の型２１ａ，２１ｂ間にこの積層体
を挟み込む。そして、型２１ａ，２１ｂを押圧すること
で、積層体は型の有する曲面形状にしたがって変形す
る。この型２１ａ，２１ｂを用いた成形加工は、図２
（ｂ）に示す加温圧着工程で樹脂が軟化した状態で、硬
化する前に行うことが好ましい。この図２（ｃ）に示す
型２１ａ，２１ｂを用いた成形加工は、それぞれの型を
事前に５０〜１５０℃程度に暖めておき、接着用樹脂材
が軟化した状態において曲面形状への成形加工を行う。
その後、徐冷（自然冷却）、或いは水冷、空冷による強
制冷却により接着用樹脂材を硬化させることにより、金
属薄板１２および太陽電池１１が塑性変形すると共に、
接着用樹脂材の硬化と併せて、強固な曲面構造を有する
成形体が出来上がる。Next, as shown in FIG. 2 (c), this laminated body is sandwiched between two molds 21a and 21b having a required curved surface shape. Then, by pressing the molds 21a and 21b, the laminated body is deformed according to the curved shape of the mold. The molding process using these molds 21a and 21b is as shown in FIG.
It is preferable that the resin is softened in the heating and pressure bonding step shown in (b) before being hardened. In the molding process using the molds 21a and 21b shown in FIG. 2C, each mold is warmed to about 50 to 150 ° C. in advance, and a molding process to a curved shape is performed in a state where the adhesive resin material is softened. I do.
After that, the metal thin plate 12 and the solar cell 11 are plastically deformed by hardening the adhesive resin material by gradual cooling (natural cooling), or forced cooling by water cooling or air cooling.
Along with the curing of the adhesive resin material, a molded body having a strong curved surface structure is completed.
【００２０】なお、図２（ｂ）に示す加温圧着工程で接
着用樹脂材が硬化しても、図２（ｃ）に示す成形工程で
再加熱することで、接着用樹脂材を軟化させることがで
きる。従って、再軟化後に、図２（ｃ）に示す成形工程
を行うようにしてもよい。Even if the adhesive resin material is hardened in the heating and pressure bonding step shown in FIG. 2B, it is reheated in the molding step shown in FIG. 2C to soften the adhesive resin material. be able to. Therefore, the molding step shown in FIG. 2C may be performed after the re-softening.
【００２１】このようにして形成された太陽電池モジュ
ールは、上述したように曲率半径が５０ｍｍ程度までの
曲面加工が可能であり、予め型を準備しておくことで、
所要の曲面形状を備えた太陽電池モジュールが得られ
る。そして、この太陽電池モジュールは、結晶性半導体
基板を用いた太陽電池を備えているので、高い発電効率
が得られ、ポールや電柱等の曲面形状を有する部分に設
置することが可能であることは、上述した通りである。The solar cell module thus formed can be processed into a curved surface with a radius of curvature of up to about 50 mm as described above. By preparing a mold in advance,
A solar cell module having a required curved surface shape can be obtained. Since this solar cell module includes a solar cell using a crystalline semiconductor substrate, high power generation efficiency can be obtained, and it can be installed in a portion having a curved shape such as a pole or a power pole. , As described above.
【００２２】表面に使用する透明耐候性フィルムは熱膨
張が大きく、熱膨張収縮を繰り返すことにより、内部の
太陽電池素子へ大きなダメージを与える可能性もある
が、金属を裏面に置くことにより、このダメージを抑制
する働きがある。また、金属を裏面に置くことにより、
モジュール形成時にモジュールに「しわ」が出来にくく
なる効果もある。The transparent weather-resistant film used on the surface has a large thermal expansion, and repeated thermal expansion and contraction may cause great damage to the internal solar cell element. However, by placing a metal on the back surface, Has a function of suppressing damage. Also, by placing the metal on the back,
It also has the effect of making it difficult for wrinkles to form on the module when it is formed.
【００２３】この図２に示す太陽電池モジュールの製造
方法においては、太陽電池モジュールを構成する材料の
平板状の積層体を形成し、次に平板状に加温圧着し、更
に次に曲面形状に成形加工する例について説明したが、
図２（ｂ）に示す平板状に加工する加温圧着工程を省略
して、図２（ａ）に示す状態から直接に、型２１ａ，２
１ｂを用いて所要の曲面形状に加温圧着・成形するよう
にしてもよい。また、表面保護層１３と太陽電池１１と
裏面絶縁層１４とを予め加温圧着し、次に予め曲面形状
に加工した金属薄板１２に接着用樹脂材（シート）を用
いて金属薄板１２の形状に沿って太陽電池１１を変形さ
せてこれに接着するようにしてもよい。In the method for manufacturing a solar cell module shown in FIG. 2, a flat plate-shaped laminate of the materials that make up the solar cell module is formed, then heat-pressed into a flat plate shape, and then into a curved surface shape. I explained the example of molding,
By omitting the heating and pressure bonding step of processing the flat plate shape shown in FIG. 2B, the molds 21a, 2 are directly formed from the state shown in FIG.
1b may be used to perform warm pressure bonding and molding into a desired curved surface shape. Further, the surface protection layer 13, the solar cell 11, and the back surface insulating layer 14 are heated and pressure-bonded in advance, and then the metal thin plate 12 processed in advance into a curved shape is bonded with a resin material (sheet) to form the shape of the metal thin plate 12. You may make it deform | transform the solar cell 11 along with and adhere | attach it.
【００２４】また、上述した実施形態では、太陽電池１
１として、シリコン単結晶又は多結晶基板を用いる例に
ついて説明したが、シリコンに限らず例えば化合物半導
体等の結晶基板を用いるようにしてもよい。また、金属
薄板として、０．１−０．５ｍｍ程度のステンレス材の
薄板を用いる例について説明したが、その厚さは０．０
１−０．５ｍｍ程度の厚さでもよく、太陽電池を構成す
る結晶性半導体基板を所要の曲面形状に加工すると共
に、安定にその形状を保持できるものであればよい。Further, in the above-described embodiment, the solar cell 1
Although the example in which the silicon single crystal or polycrystalline substrate is used has been described as No. 1, it is not limited to silicon, and a crystal substrate such as a compound semiconductor may be used. Further, an example in which a thin stainless steel plate having a thickness of about 0.1 to 0.5 mm is used as the metal thin plate has been described, but the thickness thereof is 0.0
The thickness may be about 1-0.5 mm as long as the crystalline semiconductor substrate forming the solar cell can be processed into a desired curved surface shape and the shape can be stably maintained.
【００２５】また、材質もステンレス材に限らず、鉄、
アルミニウム、又はガルバニウムの様な合金材でも構わ
ない。更にそれらの金属薄板にフッ素樹脂等を塗装した
ものでもよい。また、ここでは可塑性を有する金属薄板
を実施例として挙げたが、可塑性があり本加工温度であ
る１５０℃程度で加熱分解が生じない材料であれば金属
薄板の代替品となり得ることは勿論である。代替品とし
ては、熱可塑性樹脂、熱可塑性エラストマー等が挙げら
れる。The material is not limited to stainless steel, but iron,
An alloy material such as aluminum or galvanium may be used. Further, those thin metal plates coated with fluororesin or the like may be used. Although a metal thin plate having plasticity is given as an example here, it is a matter of course that it can be a substitute for the metal thin plate as long as it is plastic and does not cause thermal decomposition at the main processing temperature of about 150 ° C. . Examples of substitutes include thermoplastic resins and thermoplastic elastomers.
【００２６】熱可塑性樹脂には、汎用プラスチックとし
て知られるポリ塩化ビニル（ＰＶＣ）、ポリエチレン
（ＰＣ）、ポリプロピレン（ＰＰ）、ポリスチレン（Ｐ
Ｓ）、アクリロニトリルブタジエンスチレン（ＡＢ
Ｓ）、ブタジエンスチレン、ポリブタジエン、又はアク
リルゴム系ＭＢＳ樹脂（メチルメタクリレートブタジエ
ンスチレン（ＭＢＳ））、スチレンモノマーとアクリロ
ニトリルの共重合樹脂（ＡＳ）、ポリメチルメタアクリ
ル（ＰＭＭＡ）、メタクリル酸メチルとスチレンの共重
合体（ＭＳ）、ポリビニールアルコール（ＰＶＡ）、ポ
リ塩化ビニリデン（ＰＶＤＣ）、ポリエチレンテレフタ
レート（ＰＥＴ）、エンジニアリングプラスチックとし
て知られるポリアミド（ＰＡ）、ポリアセタール（ＰＯ
Ｍ）、ポリカーボネート（ＰＣ）、ポリフェニレンエー
テル（ＰＰＥ（変性ＰＰＯ））、ポリブチレンテレフタ
レート（ＰＢＴ）、超高分子量ポリエチレン（ＵＨＭＷ
−ＰＥ）、ポリ弗化ビニリデン（ＰＶＤＦ）、スーパー
エンジニアリングプラスチックとして知られているポリ
サルボン（ＰＳＦ）、ポリエーテルサルボン（ＰＥ
Ｓ）、ポリフェニレンサルファイド（ＰＰＳ）、ポリア
リレート（ＰＡＲ）、ポリアミドイミド（ＰＡＩ）、ポ
リエーテルイミド（ＰＥＩ）、ポリエーテルエーテルケ
トン（ＰＥＥＫ）、ポリイミド（ＰＩ）、液晶ポリマー
（ＬＣＰ）、ポリテトラフロロエチレン（ＰＴＦＥ）等
がある。The thermoplastic resin includes polyvinyl chloride (PVC), polyethylene (PC), polypropylene (PP), polystyrene (P), which are known as general-purpose plastics.
S), acrylonitrile butadiene styrene (AB
S), butadiene styrene, polybutadiene, or acrylic rubber-based MBS resin (methyl methacrylate butadiene styrene (MBS)), copolymer resin (AS) of styrene monomer and acrylonitrile, polymethylmethacrylic (PMMA), methyl methacrylate and styrene Copolymer (MS), polyvinyl alcohol (PVA), polyvinylidene chloride (PVDC), polyethylene terephthalate (PET), polyamide (PA) known as engineering plastic, polyacetal (PO)
M), polycarbonate (PC), polyphenylene ether (PPE (modified PPO)), polybutylene terephthalate (PBT), ultra high molecular weight polyethylene (UHMW)
-PE), polyvinylidene fluoride (PVDF), polysarubone (PSF), which is known as super engineering plastic, and polyethersarubone (PE)
S), polyphenylene sulfide (PPS), polyarylate (PAR), polyamideimide (PAI), polyetherimide (PEI), polyetheretherketone (PEEK), polyimide (PI), liquid crystal polymer (LCP), polytetrafluoro There are ethylene (PTFE) and the like.
【００２７】なお、上記実施の形態は、本発明の好まし
い一実施例を示したが、本発明の趣旨を逸脱することな
く種々の変形実施例が可能なことは勿論である。Although the above embodiment has shown a preferred embodiment of the present invention, it goes without saying that various modifications can be made without departing from the spirit of the present invention.
【００２８】[0028]
【発明の効果】以上説明したように本発明によれば、発
電効率が高く、且つ曲面形状の構造物に密着して使用す
ることができる太陽電池モジュールを提供することがで
きる。As described above, according to the present invention, it is possible to provide a solar cell module which has high power generation efficiency and which can be used in close contact with a curved structure.
【図１】本発明の実施形態の太陽電池モジュールの断面
図である。FIG. 1 is a cross-sectional view of a solar cell module according to an embodiment of the present invention.
【図２】本発明の実施形態の太陽電池モジュールの製造
方法を示す図であり、（ａ）は太陽電池モジュールを構
成する材料の間に接着用樹脂シートを挿入した状態を示
し、（ｂ）は上記積層体を加温圧着して太陽電池モジュ
ールの積層体を形成した状態を示し、（ｃ）は曲面形状
を有する型を用いて曲面形状に上記積層圧着体を成形加
工した状態を示す図である。FIG. 2 is a diagram showing a method for manufacturing a solar cell module according to an embodiment of the present invention, in which (a) shows a state in which an adhesive resin sheet is inserted between materials constituting the solar cell module, and (b). Shows a state in which the laminated body is heated and pressure-bonded to form a laminated body of a solar cell module, and (c) shows a state in which the laminated pressure-bonded body is formed into a curved shape by using a mold having a curved shape. Is.
１１ 結晶性半導体基板からなる太陽電池 １２ 金属薄板 １３ 表面保護材（シート） １４ 絶縁シート １６ 接着用樹脂材 11 Solar cell consisting of crystalline semiconductor substrate 12 Metal sheet 13 Surface protection material (sheet) 14 Insulation sheet 16 Adhesive resin material
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 2E108 AA05 KK00 NN07 5F051 AA02 AA03 BA03 BA15 EA18 GA05 ─────────────────────────────────────────────────── ─── Continued front page F term (reference) 2E108 AA05 KK00 NN07 5F051 AA02 AA03 BA03 BA15 EA18 GA05
Claims (4)
固定された厚さが２００μｍ以下の結晶性半導体基板と
からなる太陽電池を備えたことを特徴とする太陽電池モ
ジュール。1. A solar cell module comprising a thin metal plate and a solar cell comprising a crystalline semiconductor substrate having a thickness of 200 μm or less fixed on the thin plate with an adhesive.
フィルムが貼着され、前記太陽電池の裏面側には、絶縁
シートが前記金属薄板との間に配置されていることを特
徴とする請求項１記載の太陽電池モジュール。2. A transparent weather resistant film is attached to the front surface side of the solar cell, and an insulating sheet is arranged between the thin metal plate and the back surface side of the solar cell. The solar cell module according to claim 1.
用樹脂材と、結晶性半導体基板からなる太陽電池と、フ
ィルム状の裏面絶縁シートと、接着用樹脂材と、金属薄
板とをサンドイッチ状に重ねて、加温圧着して積層した
後に、前記接着用樹脂材が軟化している状態で所要の曲
面形状となるように成形加工して、前記接着用樹脂材を
硬化させることにより、曲面構造を形成することを特徴
とする太陽電池モジュールの製造方法。3. A sandwich comprising a transparent film-shaped surface protective material, an adhesive resin material, a solar cell made of a crystalline semiconductor substrate, a film-shaped back insulating sheet, an adhesive resin material, and a thin metal plate. After being laminated by heating and pressure bonding, the adhesive resin material is molded so as to have a required curved surface shape in a softened state, and the adhesive resin material is cured, A method of manufacturing a solar cell module, which comprises forming a curved structure.
着剤を用いて固定された厚さが２００μｍ以下の結晶性
半導体基板とからなる太陽電池を備えたことを特徴とす
る太陽電池モジュール。4. A solar cell module comprising a solar cell composed of a thermoplastic thin plate and a crystalline semiconductor substrate having a thickness of 200 μm or less fixed to the thin plate with an adhesive. .
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002039292A JP2003243678A (en) | 2002-02-15 | 2002-02-15 | Solar cell module and its manufacturing method |
| AU2003208006A AU2003208006A1 (en) | 2002-02-15 | 2003-02-13 | Solar cell module and method of manufacturing the same |
| PCT/JP2003/001492 WO2003069682A2 (en) | 2002-02-15 | 2003-02-13 | Solar cell module and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002039292A JP2003243678A (en) | 2002-02-15 | 2002-02-15 | Solar cell module and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003243678A true JP2003243678A (en) | 2003-08-29 |
Family
ID=27678240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002039292A Pending JP2003243678A (en) | 2002-02-15 | 2002-02-15 | Solar cell module and its manufacturing method |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2003243678A (en) |
| AU (1) | AU2003208006A1 (en) |
| WO (1) | WO2003069682A2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009537985A (en) * | 2006-05-19 | 2009-10-29 | ソルインドラ，インコーポレーテッド | Hermetic non-planar solar cell |
| JP2011146671A (en) * | 2009-12-15 | 2011-07-28 | Mitsubishi Plastics Inc | Sheet for solar cell, and solar cell module |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004003328B4 (en) * | 2004-01-22 | 2006-11-09 | Webasto Ag | Method for producing a curved body element with solar cells |
| AT506129B1 (en) | 2007-12-11 | 2009-10-15 | Heic Hornbachner En Innovation | Curved photovoltaic modules and methods of making same |
| IE20090454A1 (en) * | 2008-06-11 | 2009-12-23 | Kingspan Res & Dev Ltd | An insulating panel |
| DE102008046765A1 (en) | 2008-09-11 | 2010-03-18 | Bayerische Motoren Werke Aktiengesellschaft | Method for producing a component, in particular an outer skin part for vehicles |
| KR101474354B1 (en) | 2010-06-02 | 2014-12-18 | 쿠카 시스템스 게엠베하 | Production device and method |
| CN109742181A (en) * | 2018-11-27 | 2019-05-10 | 汉能移动能源控股集团有限公司 | Flexible film application device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4287382A (en) * | 1980-05-09 | 1981-09-01 | Exxon Research & Engineering Co. | Solar cell assembly and fabrication of solar cell panels utilizing same |
| DE3538986C3 (en) * | 1985-11-02 | 1994-11-24 | Deutsche Aerospace | Method of manufacturing a solar generator |
| DE4415132C2 (en) * | 1994-04-29 | 1997-03-20 | Siemens Ag | Process for shaping thin wafers and solar cells from crystalline silicon |
| JP3397637B2 (en) * | 1997-06-11 | 2003-04-21 | キヤノン株式会社 | Solar cell integrated roofing sheet, method for manufacturing the same, and method for constructing the same |
| US6414236B1 (en) * | 1999-06-30 | 2002-07-02 | Canon Kabushiki Kaisha | Solar cell module |
-
2002
- 2002-02-15 JP JP2002039292A patent/JP2003243678A/en active Pending
-
2003
- 2003-02-13 WO PCT/JP2003/001492 patent/WO2003069682A2/en active Application Filing
- 2003-02-13 AU AU2003208006A patent/AU2003208006A1/en not_active Abandoned
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009537985A (en) * | 2006-05-19 | 2009-10-29 | ソルインドラ，インコーポレーテッド | Hermetic non-planar solar cell |
| JP2013243403A (en) * | 2006-05-19 | 2013-12-05 | Solyndra Inc | Hermetically sealed nonplanar solar cell |
| JP2011146671A (en) * | 2009-12-15 | 2011-07-28 | Mitsubishi Plastics Inc | Sheet for solar cell, and solar cell module |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2003069682A2 (en) | 2003-08-21 |
| WO2003069682A3 (en) | 2004-05-21 |
| AU2003208006A1 (en) | 2003-09-04 |
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