JP2003138369A - Vapor deposition apparatus, vapor deposition method, and liquid crystal device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus and a vapor deposition method in which a plurality of vapor-deposited films of uniform vapor deposition angle and/or vapor deposition film thickness can be easily formed over the entire substrate surface as a work to be vapor- deposited, and a manufacturing method of a liquid crystal device using the vapor deposition apparatus and the vapor deposition method. SOLUTION: The vapor deposition apparatus 1 comprises a vapor deposition chamber 8 having a first vapor deposition source 2a and a second vapor deposition source 2b to generate the vapor of a vapor deposition substance, a vapor distribution unit 3 provided with an opening part 3a capable of distributing the vapor of the vapor deposition substance, and a carrying unit 4 which is formed on the vapor distribution unit 3 to carry a substrate 5 as the work, a vacuum pump 10 to evacuate the vapor deposition chamber 8, a carriage control unit 7 to control the operation of the carrying unit 4, and an operation switch control unit 6 to operate either the first vapor deposition source 2a or the second vapor deposition source 2b. The carriage control unit 7 switches the substrate 5 from a passing condition of the opening part 3a to a non-passing condition, and the operation switch control unit 6 switches the operation of the first vapor deposition source 2a and the second vapor deposition source 2b in the non-passing condition.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a vapor deposition apparatus suitable for forming a vapor deposition film such as a liquid crystal alignment film on the surface of a material to be vapor deposited, a vapor deposition method using this apparatus, and a method for manufacturing a liquid crystal device.

[0002]

2. Description of the Related Art An oblique vapor deposition method is known as a method for forming a vapor deposition film on the surface of a vapor deposition material such as a substrate. In this oblique vapor deposition method, the vapor deposition substance is introduced into the vapor deposition material from an oblique angle to form a columnar structure (hereinafter also referred to as a column) of the vapor deposition substance oriented in a predetermined direction with respect to the vapor deposition material surface. It is a vapor deposition method capable of Specifically, it is performed using a predetermined vapor deposition apparatus, and the vapor deposition source is heated under vacuum to generate a vapor flow of the vapor deposition material, and the vapor deposition source and the inclination angle θ ₁ (the vapor deposition source and the substrate surface center of gravity position are previously set. It is supposed that vapor deposition is performed on the material to be vapor-deposited set at an angle formed by the reference line connecting the substrate and the normal to the substrate surface. In this case, the column orientation direction of the vapor deposition material is determined based on the tilt angle θ ₁ .

On the other hand, such an oblique vapor deposition method may be used, for example, when forming a liquid crystal alignment film. In this case, the liquid crystal molecules can be tilted by a predetermined angle θ ₂ (also referred to as a pretilt angle) based on the vapor deposition film formed as the liquid crystal alignment film on the substrate, specifically based on the alignment direction of the column. . For example, by using SiO as a vapor deposition material and introducing a vapor flow of SiO into a substrate at a vapor deposition angle with an inclination angle θ ₁ , a vapor deposition film of SiO (liquid crystal alignment film)
Is formed on the substrate surface, and for example, the vapor deposition angle is 45 ° to 7 °.
When the angle is about 2 °, the pretilt angle θ ₂ is 0 °, and when the vapor deposition angle is about 75 ° to 85 °, θ ₂ is 11 ° to 35 °.
It will be about.

[0004]

However, in the above oblique vapor deposition method, the vapor deposition angle (vapor deposition angle), the film thickness, etc. differ depending on the location on the surface of the material to be vapor deposited. This is because the vapor deposition source is a point source and the material to be vapor-deposited is set (fixed) at an inclination angle θ ₁ with the point source. This is because it becomes larger. When the vapor deposition angle (angle formed by the vapor deposition direction and the normal to the substrate surface) and the vapor deposition film thickness vary depending on the location, the orientation direction of the vapor deposition molecules may also vary depending on the location. Furthermore, when a vapor deposition film is used as a liquid crystal alignment film,
When the vapor deposition angle and / or the vapor deposition film thickness varies depending on the location on the substrate surface, the pretilt angle θ ₂ of the liquid crystal molecules may vary depending on the location on the substrate surface.

Specifically, the film thickness increases in a portion close to the vapor deposition source on the surface of the substrate and decreases in a portion distant from the evaporation source, and the pretilt angle increases when the film thickness is large, and the pretilt angle is small when the film thickness is small. The corners may become smaller. As a result, the electro-optical characteristics of the liquid crystal layer change depending on the location, and when this is used for a display screen or the like, uniform contrast may not be obtained over the entire display screen.

On the other hand, in the oblique vapor deposition method, if there is unevenness on the substrate surface, there is a problem that it is difficult to form a deposited film in a region that is a shadow of the unevenness in the deposition direction. Therefore, after forming the first layer of the vapor deposition film at a predetermined inclination angle θ ₁ , the vapor deposition apparatus in the vacuum state is returned to the steady state, the inclination angle θ _{1 of the} substrate is changed to a different inclination angle θ ₃ , and the vacuum angle is again set. By performing the second vapor deposition film after returning to the state, vapor deposition can be performed from a plurality of tilt angles. In addition, it is known that not only the tilt angle but also the in-plane direction (azimuth angle direction) of vapor deposition is made different to enable vapor deposition from a plurality of directions, and vapor deposition is also performed on a portion which is shaded by the unevenness. In the method using such a device, not only is it time-consuming, but as described above, a vapor deposition film having a non-uniform vapor deposition angle and / or vapor deposition film thickness may be formed on the surface of the substrate. When it is used as a film, it may cause the same problems as the above-mentioned decrease in contrast.

An object of the present invention is to provide a vapor deposition apparatus capable of simply laminating a plurality of vapor deposition films having a uniform vapor deposition angle and / or vapor deposition film thickness over the entire surface of a substrate which is a material to be vapor deposited. And a vapor deposition method, and a vapor deposition apparatus and a liquid crystal device manufacturing method using the vapor deposition method.

[0008]

In order to solve the above-mentioned problems, the vapor deposition apparatus of the present invention includes a first vapor deposition source and a second vapor deposition source for generating vapor of vapor deposition material, and a vapor deposition target capable of transporting a vapor deposition material. A vapor deposition material transporting section, and a vapor circulation section having an opening through which the vapor can flow, wherein the vapor deposition material transporting section is a vapor deposition apparatus in which the vapor deposition material at least faces an opening of the vapor circulation section. A transport switching unit for transporting the transportable state from the possible state to the non-depositable state not facing the opening is provided, and the vapor deposition apparatus operates either the first vapor deposition source or the second vapor deposition source. The vapor deposition source operation switching means is included.

According to such a vapor deposition apparatus, for example, the first
When the vapor deposition source is operating and vapor is generated, the vapor deposition target material is vaporizable and a first vapor deposition film is formed. The second vapor deposition film can be formed by operating the vapor deposition target material so that the vapor deposition target material can be vapor deposited again. This makes it possible to alternately form multilayer vapor deposition films on the vapor deposition material. In addition,
Although the first vapor deposition source and the second vapor deposition source are included, the vapor deposition apparatus of the present invention is not limited to these two vapor deposition sources, and a plurality of vapor deposition sources are provided and each of them is switched to operate. You can also

The transport switching means transports the material to be vapor-deposited into a vapor-depositable state when the first vapor deposition source is operating, and a vapor-depositable state to a vapor-depositable state. By including a second transport state in which the second deposition source is transported, and a third transport state in which the deposition target material is transported from the deposition-disabled state to the deposition-enabled state when the second deposition source is operating, It is possible to provide a vapor deposition apparatus capable of reliably forming at least two vapor deposition films.
By making it possible to reliably form a two-layer vapor-deposited film, for example, when a two-layer vapor-deposited film is used as an alignment film of a liquid crystal display device, the pretilt angle of liquid crystal molecules can be relatively easily and arbitrarily controlled. Columnar structure of vapor deposition material on the upper layer side (hereinafter, also referred to as column)
It is possible to control the pretilt angle based on the azimuth direction of the.

Specifically, the transport switching means transports the material to be vapor-deposited in a manner of traversing the opening to switch the material to be vapor-deposited from a passing state in which it passes through the opening to a non-passing state, and the passage is performed. The vapor deposition material may be vapor-deposited in the state, and the vapor deposition material may not be vapor-deposited in the non-passage state. In this case, by transporting the material to be vapor-deposited across the opening, the surface to be vapor-deposited of the material to be vaporized moves in a manner to traverse the opening of the vapor circulation unit, and the material to be vapor-deposited is fixed at a position. The deposition angle and / or the deposition film thickness may be uniform at each location on the deposition surface as compared with the case where the deposition is performed and deposition is performed.

The transport switching means includes a first-direction transport state in which the deposition material is transported in a predetermined direction and a second-direction transport state in which the deposition material is transported in a direction different from the first direction. It can be wasteful. That is, it is possible to make the transport direction when the first vapor deposition film is formed by the first vapor deposition source different from the transport direction when the second vapor deposition film is formed by the second vapor deposition source. It is possible to change the orientation direction of the columnar structure (column) of the vapor deposition material in the second vapor deposition film. That is, the first vapor deposition and the second
By making at least the transport direction different from the vapor deposition of, it becomes possible to make the vapor deposition direction different, for example, even when unevenness is formed on the surface of the material to be vapor deposited,
It is possible to surely perform vapor deposition even on a portion which becomes a shadow of the unevenness.

The first vapor deposition source and the second vapor deposition source form an angle between a reference line connecting the vapor deposition source and the position of the center of gravity of the opening surface of the vapor flow section and a normal to the vapor deposition surface of the vapor deposition material. The vapor deposition reference angles defined in 1. can be different from each other. This makes it possible to make the vapor deposition angles of the first vapor deposition film and the second vapor deposition film different. Therefore, it may be possible to form a plurality of vapor deposition films having different vapor deposition angles in multiple layers. Moreover, in the case where the vapor deposition is performed under vacuum, in order to form vapor deposition films having different vapor deposition angles, conventionally, after performing the first vapor deposition, the vacuum state is returned to the normal state and the second vapor deposition is performed. Although it has been troublesome, in the case of the present invention, such trouble can be omitted.

Further, the vapor deposition apparatus may be provided with a vapor deposition material rotating means for rotating the vapor deposition material in the same plane. In this case, by rotating the material to be vapor-deposited in the same plane, the vapor deposition direction can be changed with the rotation. Further, by rotating the material to be vapor-deposited in the same plane at the time of switching between the first vapor deposition by the first vapor deposition source and the second vapor deposition by the second vapor deposition source, the first vapor deposition and the second vapor deposition can be reliably performed. With, it becomes possible to change the vapor deposition direction. Therefore, for example, even when irregularities or the like are formed on the surface of the material to be vapor-deposited, it is possible to perform vapor deposition from a plurality of directions with respect to the irregularities, and it is possible to reliably perform vapor deposition even in the shadow of the irregularities. Become. Further, it is possible to form a two-layer vapor deposition film having different in-plane directions (azimuth angle direction) of vapor deposition, and the azimuth angle directions of columns of these vapor deposition films are different from each other. When used, the pretilt angle of liquid crystal molecules can be controlled relatively arbitrarily, and more specifically, the pretilt angle can be controlled within the range of 5 ° to 20 °.

Next, the vapor deposition method of the present invention is characterized by using the above vapor deposition apparatus, wherein the vapor deposition material is disposed in the vapor deposition material transporting section, and the first vapor deposition is carried out while transporting the vapor deposition material. A first vapor deposition step of operating a source to perform a first vapor deposition via the vapor flow section, and a second vapor deposition step of operating a second vapor deposition source to perform a second vapor deposition via the vapor flow section; It is characterized by including. With such a vapor deposition method, a vapor deposition film having a plurality of vapor deposition layers can be easily formed, and the film thickness and / or vapor deposition angle of the vapor deposition film can be made more uniform.

Further, the method for manufacturing a liquid crystal device according to the present invention comprises a structure in which a liquid crystal layer is sandwiched between a pair of substrates facing each other, and an inorganic alignment film is formed on the liquid crystal layer side surface of the pair of substrates, respectively. A method of manufacturing a liquid crystal device, wherein the inorganic alignment film is formed by vapor deposition on the surface of the substrate using the vapor deposition device. In this case, an inorganic alignment film, which is a vapor deposition material, is formed on the surface of the substrate, and since the above vapor deposition apparatus is used, the thickness of the inorganic alignment film is more uniform than that of the conventional vapor deposition method, and the vapor deposition is performed. Since the angles are made more uniform, the liquid crystal molecules in the sandwiched liquid crystal layer can be more uniformly tilted by a predetermined angle (pretilt angle), and further, these films can be formed in a plurality of layers. Therefore, when a liquid crystal device manufactured by the method of the present invention is used in a display device, the electro-optical characteristics of the liquid crystal layer become more uniform regardless of the location, so that a uniform contrast is displayed over the entire display screen. Is possible.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION [Embodiment of vapor deposition apparatus]
An embodiment of the vapor deposition device of the present invention will be described with reference to the drawings. In addition, in each drawing, in order to make each constituent member a size that can be recognized in the drawing, the scale is different. FIG. 1 is an explanatory diagram schematically showing the appearance of a vapor deposition device. The vapor deposition apparatus 1 includes a first vapor deposition source 2a and a second vapor deposition source 2b that generate vapor of a vapor deposition material,
A vapor deposition chamber 8 including a vapor circulation unit 3 having a slit-shaped opening 3a through which vapor of a vapor deposition substance can flow, and a transport unit 4 formed in the vapor circulation unit 3 and capable of transporting a substrate 5 as a deposition target material. A vacuum pump 10 for evacuating the vapor deposition chamber 8,
A transport control unit (transport switching unit) that controls the operation of the transport unit 4
7. Operation switching control unit (deposition source operation switching means) for operating either the first evaporation source 2a or the second evaporation source 2b
6 is provided. The transport control unit 7 and the operation switching control unit 6 may be integrally configured by the same control device.

The transfer controller 7 controls the substrate 5 in the transfer unit 4.
The transport start / stop timing, the transport direction, the transport speed, etc. are controlled, and the operation switching control unit 6 controls
The start and stop timings of the two vapor deposition sources 2a and 2b, the vapor generation amount, and the like are controlled. A CPU, a ROM, and a RAM are incorporated in each of the control units 6 and 7. For the above-mentioned transfer control and vapor deposition source operation control, for example, the CPU reads a control program stored in the ROM and uses the RAM as a work area based on the control program. It is supposed to be executed by the CPU. It is also possible to provide a switch in each control unit and manually operate the switch to perform the substrate transfer control, the vapor deposition source operation control, and the like by hardware.

The substrate 5 is transported by the transport unit 4 in such a manner as to traverse the opening 3a, and vapor of the vapor deposition material is vaporized when traversing the opening 3a. That is,
When the substrate 5 passes through the opening 3a (when it faces the opening surface of the opening 3a), the vapor deposition is possible, and when it does not pass (when it does not face the opening surface of the opening 3a), the vapor deposition is not possible. Has been done.

Therefore, the vapor deposition method using the vapor deposition apparatus 1 is as follows. First, when the vacuum pump 10 is operated, the vapor deposition chamber 8 is evacuated, and when either the first vapor deposition source 2a or the second vapor deposition source 2b is heated, vapor of the vapor deposition material is generated from the heated vapor deposition source. . The vapor flow of the vapor deposition material generated from either the vapor deposition source 2a or the vapor deposition source 2b passes through the opening 3a of the vapor circulation unit 3 and forms a predetermined angle (deposition angle) on the surface to be vapor deposited of the substrate 5 being transported.
It is supposed to be deposited in. Specifically, when the first vapor deposition source 2a is generating vapor, the substrate 5 is opened by the opening 3a.
Of the first evaporation source 2a is stopped and the second evaporation source 2b is stopped. It is supposed that the control is carried out to carry the substrate 5 again to the vapor deposition ready state. Thereby, the first vapor deposition film is formed by the first vapor deposition source 2a and the second vapor deposition film is formed by the second vapor deposition source 2b, and it is possible to vapor deposit at least two vapor deposition films. Become.

FIG. 2 is an explanatory view schematically showing the positional relationship among the vapor deposition source 2, the vapor circulation section 3 and the transfer section 4. The transport unit 4 is configured by transport rollers, and the substrate 5 can be moved in-plane on the vapor circulation unit 3 by rotating the transport roller in a predetermined direction at a predetermined speed. The transport unit 4
For example, a belt type conveyor or the like can be adopted, and in addition, the steam flow section 3 is configured to be tiltable at a predetermined angle in both the plus angle direction and the minus angle direction,
The substrate 5 is transported (slide) with the inclination of the vapor circulation unit 3.
It is also possible to let.

On the other hand, the transfer unit 4 is capable of rotating the substrate 5 in the same plane. Specifically, each of the plurality of rollers is configured to be rotatable in the direction of 360 °, and the substrate 5 is rotated in-plane by the rotation of each roller. In the case of the present embodiment, when the substrate 5 does not face the opening surface of the opening 3a, that is, when the substrate 5 is in a state where vapor deposition is not possible, the roller is supposed to rotate in a predetermined direction so as to rotate the substrate 5. There is.

The first vapor deposition source 2a and the second vapor deposition source 2b are constituted by point sources or line sources, and reference lines l ₁ and l ₂ connecting these vapor deposition sources 2a and 2b and the center of gravity of the opening surface of the opening 3a. And the vapor deposition reference angles θ ₁ and θ ₂ defined by the angle formed by the normal l ₃ of the opening surface of the opening ₃ a are 80 ° and 6 respectively.
It is arranged at 0 °. Therefore, the first evaporation source 2
The vapor deposition angles of the vapor deposition material deposited on the substrate 5 from the a and the second vapor deposition source 2b are different from each other.

[Example of Vapor Deposition Method] An example of a vapor deposition method using the vapor deposition apparatus 1 of the present embodiment will be described below with reference to FIG.
~ It demonstrates, referring to FIG. First, as shown in FIG.
The substrate 5 is transported by operating the transport unit 4. Specifically, the substrate 5 is transported from the first shielding portion 135, which is the non-opening portion of the vapor circulation portion 3, to the second shielding portion 136 via the opening portion 3a (see FIG. 4). Such a first shield 13
During the transportation from 5 to the second shield 136, only the first vapor deposition source 2a is operated to perform the first vapor deposition (first vapor deposition step). Therefore, the substrate 5 is sequentially conveyed from the first end side A to the second end side B so as to face the opening 3a, and as a result, the first end side A to the second end side B are sequentially transferred to the first end side A. Deposition is performed. In this first vapor deposition step, the vapor deposition rate from the first vapor deposition source 2a to the substrate 5 is 1.
nm / sec, and the substrate transfer speed is 0.5 cm / sec. Further, in the drawing, reference numeral C shown near the center of the substrate 5
Indicates the position on the front side of the paper surface of the substrate, and the symbol D shown in parentheses indicates the position on the rear side of the paper surface of the substrate.

When the substrate 5 is transported to the second shield 136 as shown in FIG. 4 based on the transport unit 4, the transport unit 4 substantially fixes the position of the substrate 5 (the center of gravity position is substantially fixed). Rotate in-plane. Specifically, the substrate is rotated by 90 ° in the plane, and as shown in FIG. 6, the first end side A located on the leading side in the transport direction in the first vapor deposition step is rotated to the rear side in the drawing. The second end side B located on the rear side in the transport direction is rotated to the front side in the drawing. Therefore, in the first vapor deposition step, the position C on the front side of the drawing is rotated to the right side of the drawing, and the position D on the rear side of the drawing is rotated to the left side of the drawing. In addition, this rotation is performed by the arm 4 as shown in FIG. 5, for example.
It is also possible to carry out by the operation of 5. This arm 45
In the above, the substrate gripping part 46 for gripping the substrate 5 on the second shielding part 136 of the vapor circulation part 3 and the rotation operating part 47 for rotating the gripped substrate are provided.
After gripping the substrate 5 and lifting the substrate 5, it is possible to rotate the substrate 5 in-plane based on the rotation of the rotation operating unit 47.

In this way, the substrate 5 is rotated in the plane, and the positions of the first end side A and the second end side B are rotated by 90 °, and then, as shown in FIG.
As shown in, the substrate 5 is transported in the direction opposite to the first vapor deposition step. That is, the rotated substrate 5 is transferred from the second shield 136 to the first shield 135 through the opening 3a (see FIG. 8). During the transportation from the second shielding unit 136 to the first shielding unit 135, the second vapor deposition source 2b alone is operated to perform the second vapor deposition (second vapor deposition step). Therefore, the substrate 5 is sequentially conveyed from the fourth end side D to the third end side C so as to face the opening 3a, and as a result, the second end side D is sequentially transferred to the third end side C. Deposition is performed. Further, this second vapor deposition is supposed to be formed on the upper layer of the first vapor deposition film. In this second vapor deposition step, the vapor deposition rate from the third vapor deposition source 2a to the substrate 5 is 2 nm / sec, and the substrate transport speed is 0.5 cm / sec.

[One Embodiment of Liquid Crystal Device] The above vapor deposition device 1
With reference to the drawings, one embodiment of the configuration of a liquid crystal device using a substrate with a vapor deposition film manufactured by will be described below. FIG. 9 is an equivalent circuit of various elements, wirings, and the like in a plurality of pixels formed in a matrix which form an image display area of a liquid crystal device. FIG. 10 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes, etc. are formed. FIG. 11 shows A- of FIG.
It is an A'line sectional view. In addition, in FIG. 11, in order to make each layer and each member recognizable in the drawing,
The scale is made different for each layer and each member.

As shown in FIG. 9, in the liquid crystal device of the present embodiment, the plurality of pixels formed in a matrix form the image display area are the pixel electrode 9a and the pixel electrode 9 concerned.
A plurality of pixel switching TFTs 30 for controlling a are formed in a matrix, and a data line 6a for supplying an image signal is electrically connected to the source region of the TFT 30. Image signal S to be written in the data line 6a
, S2, ..., Sn may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. Also, T
The scanning line 30a is electrically connected to the gate of the FT 30, and is configured to apply the scanning signals G1, G2, ..., Gm to the scanning line 30a in a pulse-wise manner in this order at a predetermined timing. ing. The pixel electrode 9a is electrically connected to the drain region of the pixel switching TFT 30, and by closing the switch of the pixel switching TFT 30, which is a switching element, for a certain period, the image signal S1 supplied from the data line 6a. , S
2, ..., Sn are written at a predetermined timing.

The image signals S1, S2, ..., Sn having a predetermined level written in the liquid crystal through the pixel electrode 9a are applied to the counter electrode 21 (see FIG. 11) formed on the counter substrate 20 (see FIG. 11).
(Refer to 1)) is held for a certain period. Here, in order to prevent the held image signal from leaking, the pixel electrode 9
A storage capacitor 70 is added in parallel with the liquid crystal capacitor formed between a and the counter electrode 21 (see FIG. 11). For example, the voltage of the pixel electrode 9a is held for a time that is three orders of magnitude longer than the time when the source voltage is applied by the storage capacitor 70. As a method of forming the storage capacitor 70, a capacitance line 30b which is a wiring for forming a capacitance with the semiconductor layer is provided.

Next, referring to FIG. 10, the pixel portion (image display area) of the TFT array substrate of the liquid crystal device of this embodiment.
The planar structure inside will be described. A plurality of transparent pixel electrodes 9 are arranged in a matrix on the TFT array substrate of the liquid crystal device.
a (the outline is indicated by a dotted line portion 9a ') is provided, and the data line 6a, the scanning line 30a, and the capacitance line 30b are provided along the vertical and horizontal boundaries of the pixel electrode 9a. The data line 6a is electrically connected to the source region of the semiconductor layer 11a made of a polysilicon film via the contact hole 50, and the pixel electrode 9a is connected to the drain region of the semiconductor layer 11a via the contact hole 80. Electrically connected to. Pixel electrode pitch is 2
It is about 0 μm or less, preferably about 15 μm or less. Further, the scanning line 30a is arranged so as to face the channel region of the semiconductor layer 11a, and the scanning line 30
a functions as a gate electrode.

Next, looking at the sectional structure, as shown in FIG. 11, the liquid crystal device of the present embodiment has a pair of transparent substrates, and the TFT array substrate 100 which constitutes one of the substrates.
And a counter substrate 2 which is the other substrate arranged to face the counter substrate 2
It has 0 and. The TFT array substrate 100 is made of, for example, a quartz substrate or hard glass, and the counter substrate 20 is made of, for example, a glass substrate or a quartz substrate. TFT
The array substrate 100 is provided with pixel electrodes 9a made of, for example, a transparent conductive film such as an ITO film. Pixel switching for controlling switching of each pixel electrode 9a is provided at a position adjacent to each pixel electrode 9a on the TFT array substrate 100. For TF
T30 is provided. Pixel switching TFT3
Reference numeral 0 has a LDD (Lightly Doped Drain) structure, and the scanning line 30a and the channel region 1 of the semiconductor layer 11a in which a channel is formed by an electric field from the scanning line 30a.
a ′, the insulating thin film 12 that insulates the scanning line 30a from the semiconductor layer 11a, the data line 6a, the low-concentration source region 1b and the low-concentration drain region 1c of the semiconductor layer 11a, the semiconductor layer 11
a high-concentration source region 1d and high-concentration drain region 1e
Is equipped with.

The insulating thin film 12 is formed on the scanning line 30a.
On the TFT array substrate 100 including the upper part, the second interlayer insulating film 14 in which the contact hole 50 communicating with the high concentration source region 1d and the contact hole 80 communicating with the high concentration drain region 1e are respectively formed is formed. That is,
The data line 6a is electrically connected to the high concentration source region 1d via a contact hole 50 penetrating the second interlayer insulating film 14. Further, on the data line 6a and the second interlayer insulating film 14, the third interlayer insulating film 17 in which the contact hole 80 leading to the high concentration drain region 1e is formed.
Are formed. That is, the high concentration drain region 1e
Are electrically connected to the pixel electrode 9a through a contact hole 80 penetrating the second interlayer insulating film 14 and the third interlayer insulating film 17. The third interlayer insulating film 17 and the pixel electrode 9a serve as a base layer of the inorganic alignment film 36.

Further, the insulating thin film 12 serving as a gate insulating film is extended from a position facing the gate electrode formed of a part of the scanning line 30a to be used as a dielectric film, and the semiconductor layer 11a is extended to form the first accumulation. A storage capacitor 70 is formed by using the capacitance electrode 1f and a part of the capacitance line 30b facing the capacitance electrode 1f as the second storage capacitance electrode.

Further, as shown in FIG. 11, a first light shielding film 111 is provided on the surface of the TFT array substrate 100 at positions corresponding to the pixel switching TFTs 30. The first light-shielding film 111 includes a metal layer M1 provided on the TFT array substrate 100 and a barrier layer B1 provided on the metal layer M1.

A first interlayer insulating film (insulator layer) 112 is provided between the first light shielding film 111 and the plurality of pixel switching TFTs 30. First interlayer insulating film 11
2 is provided to electrically insulate the semiconductor layer 11a forming the pixel switching TFT 30 from the first light shielding film 111. Further, the first interlayer insulating film 11
No. 2 is formed on the entire surface of the TFT array substrate 100, and its surface is polished and flattened in order to eliminate the step difference of the first light shielding film 111 pattern.

The first light-shielding film 111 (and the capacitance line 30b electrically connected thereto) is electrically connected to a constant potential source, and the first light-shielding film 111 and the capacitance line 30b are
It is a constant potential. Therefore, the potential variation of the first light-shielding film 111 does not adversely affect the pixel switching TFT 30 arranged so as to face the first light-shielding film 111.

On the other hand, on the counter substrate 20, a second region is formed in a region opposite to the formation region of the data lines 6a, the scanning lines 30a, and the pixel switching TFTs 30 on the TFT array substrate 10, that is, a region other than the opening region of each pixel portion. A light shielding film 23 is provided. Further, on the counter substrate 20 including the second light shielding film 23, the counter electrode (common electrode) is formed over the entire surface.
21 is provided. The counter electrode 21 is also formed of a transparent conductive film such as an ITO film, like the pixel electrode 9a of the TFT array substrate 100. Due to the presence of the second light-shielding film 23, incident light from the counter substrate 20 side does not enter the channel region 1a ′, the low-concentration source region 1b, and the low-concentration drain region 1c of the semiconductor layer 11a of the pixel switching TFT 30. Absent. Further, the second light-shielding film 23 has a function of improving the contrast ratio and preventing color mixture of color materials, that is, a function as a so-called black matrix.

Next, the pixel switching TFTs 30 of the TFT array substrate 100, the data lines 6a and the scanning lines 30a.
An inorganic orientation film 36 made of an inorganic oblique vapor deposition film is formed on the third interlayer insulating film 17 and the pixel electrode 9a, which are the formation regions of. The inorganic alignment film 36 is the first light-shielding film 11
1, the first interlayer insulating film 112, the TFT 30, the second interlayer insulating film 14, the third interlayer insulating film 17, the pixel electrode 9a and the like are formed on the TFT array substrate 100 using the above-described vapor deposition device 1 (see FIG. 1). It is formed by an oblique deposition process of depositing an inorganic material such as silicon oxide and growing columns arranged at a predetermined angle with respect to the substrate 100. In particular, two deposition films including columns are laminated, The column has different orientations or angles.

FIG. 12 is a diagram schematically showing a cross-sectional structure along the oblique vapor deposition direction of a portion where the inorganic oblique vapor deposition film 36 is formed and a portion in the vicinity thereof. The inorganic oblique vapor deposition film 36 is
A first column 36a of inorganic material oriented at a predetermined angle θ _{3 with} respect to the surface of the substrate 100 and a second column 36b of inorganic material oriented at a predetermined angle θ ₄ are provided.
a, 36b (36b, 36b) are sparsely formed,
Adjacent columnar structures 36a, 36a (36b, 36b)
There is a gap 37 between them.

Returning to FIG. 11, the counter substrate 20 corresponding to the position facing the inorganic alignment film 36 on the TFT array substrate 100 side.
An inorganic alignment film 142 made of a similar material is also provided on the counter electrode 21. Similar to the inorganic alignment film 36, the inorganic alignment film 142 is also formed on the counter substrate 20 on which the second light-shielding film 23, the counter electrode 21 and the like are formed by using the above-described vapor deposition device 1 (see FIG. 1) and an inorganic material such as silicon oxide. Is vapor-deposited, and the first column and the second column arranged at a predetermined angle with respect to the substrate 20 are grown by oblique vapor deposition.

TFT array substrate 100 and counter substrate 20
Are arranged so that the pixel electrode 9a and the counter electrode 21 face each other. Then, liquid crystal is sealed in a space surrounded by the substrates 100 and 20 and a sealing material provided on the side of the substrate (not shown), and a liquid crystal layer 150 is formed. The liquid crystal layer 150 is in a predetermined alignment state by the action of the inorganic alignment films 36 and 142 when the electric field from the pixel electrode 9a is not applied (when no voltage is applied). Note that "when no voltage is applied" and "when voltage is applied" refer to "when the voltage applied to the liquid crystal layer is less than the threshold voltage of the liquid crystal" and "when the voltage applied to the liquid crystal layer is the threshold voltage of the liquid crystal", respectively. When it is above the voltage, it means.

As described above, in the liquid crystal device of this embodiment, since two layers of vapor deposition films (alignment films) having different vapor deposition directions and vapor deposition angles are formed, for example, when unevenness is formed on the substrate surface. In addition, it is possible to surely perform vapor deposition even on a portion that becomes a shadow of the unevenness. Therefore, when the liquid crystal device of the present embodiment is used as a display device, display defects due to alignment film defects are less likely to occur. Further, since the two-layer alignment films having different in-plane directions (azimuth angle directions) of vapor deposition are formed, the pretilt angle of liquid crystal molecules can be relatively easily and arbitrarily controlled. Therefore, the liquid crystal molecules can be reliably aligned with the pretilt angle, and the alignment of the liquid crystals is less likely to be disturbed, and display defects are less likely to occur.

As shown in FIG. 12, the liquid crystal molecules in the vicinity of the portion where the inorganic oblique vapor deposition film 36 is formed have the long axis of the molecules when no electric field is applied (when no voltage is applied). It is oriented in a plane including the direction along the oblique deposition direction, and the pretilt angle θ _p is in the range of 25 degrees to 45 degrees. The liquid crystal molecules are aligned in this way because of the inorganic oblique vapor deposition film 3
6, 142 is a structure having a gap 37 between the slanted columns as described above, and the inorganic oblique vapor deposition film 36,
This is due to the effect of the surface shape of the liquid crystal layer 142 on the liquid crystal layer 150 side.

[Manufacturing Process of Liquid Crystal Device] Next, one embodiment of the manufacturing process of the liquid crystal device having the above structure will be described with reference to FIGS. 13 to 15. 13 and 14 show the TFT array substrate 100 in each process.
15 (a) and 15 (b) show the layers on the side of the counter substrate 20 in each step, as in FIG.
It is a process drawing shown corresponding to an A'section.

As shown in FIG. 13, the first light-shielding film 111 including the metal layer M1 and the barrier layer B1 is formed on the TFT array substrate 100 formed of a quartz substrate, hard glass, or the like.
Interlayer insulating film 112, semiconductor layer 11a, channel region 1
a ′, low-concentration source region 1b, low-concentration drain region 1
c, high concentration source region 1d, high concentration drain region 1e,
The first storage capacitor electrode 1f, the insulating thin film 12, the scanning line 30a,
Capacitance line 30b, second interlayer insulating film 14, data line 6a, third interlayer insulating film 17, contact hole 80, pixel electrode 9
a is the same method as the conventional method (eg, photolithography method)
Prepare the one formed by the above. An inorganic material (vapor deposition substance) is obliquely vapor-deposited from a predetermined direction on the surface of the TFT array substrate 100 on which the pixel electrodes 9a and the like are formed in this way, using the vapor deposition apparatus 1 shown in FIG. Then, as shown in FIG. 13, an inorganic oblique vapor deposition film 36 (see FIG. 12) having a first column and a second column oriented in a predetermined direction is formed on the surface layer portion.

On the other hand, as the counter substrate 20, a glass substrate or the like is first prepared, and as shown in FIG.
The light shielding film 23 is formed through a photolithography process and an etching process after sputtering metallic chromium, for example. The light-shielding film is made of Cr, Ni (nickel),
In addition to a metal material such as Al, it may be formed of a material such as resin black in which carbon or Ti is dispersed in a photoresist. Then, the counter substrate 2 on which the second light shielding film 23 is formed
The counter electrode 21 is formed by depositing a transparent conductive film such as ITO in a thickness of about 50 to 200 nm on the entire surface of 0 by sputtering or the like. Next, the second light shielding film 23
An inorganic material such as silicon oxide is vapor-deposited on the counter substrate 20 having the counter electrodes 21 and the like formed thereon using the vapor deposition apparatus 1 shown in FIG. 1, and the first columnar columns are arranged at a predetermined angle with respect to the substrate. Oblique vapor deposition for growing the structure and the second columnar structure is performed to form an inorganic alignment film 142 on the surface layer of the counter electrode 21 as shown in FIG.

Finally, the T on which each layer was formed as described above.
FT array substrate 100 (see FIG. 14) and counter substrate 20
(See FIG. 15) are arranged so that the oblique vapor deposition directions in at least the respective first vapor deposition films are opposite (shifted by 180 °) (the TFT array substrate 100 and the counter substrate 20 are arranged at a predetermined angle. Structures are arranged so that the arrangement directions are opposite to each other), and the cells are bonded by a sealing material 51 (see FIG. 15) so that the cell thickness becomes 4 μm, and an empty panel is manufactured. Fluorine-based positive type liquid crystal is used as the liquid crystal, and this liquid crystal is sealed in the panel to obtain the liquid crystal device of this embodiment.

In the liquid crystal device and the method for manufacturing a substrate for a liquid crystal device according to the above-described embodiments, the present invention is an active matrix type liquid crystal device using a three-terminal type element represented by a TFT element, and a substrate for the liquid crystal apparatus. Although the case where the invention is applied to the manufacturing method is described, an active matrix type liquid crystal device using a two-terminal type element represented by a TFD element and a method for manufacturing the substrate for the liquid crystal device, a passive matrix type liquid crystal device and the liquid crystal. It can also be applied to a method for manufacturing a device substrate. Further, the present invention can be applied not only to a transmissive liquid crystal device but also to a reflective liquid crystal device.

[Overall Configuration of Liquid Crystal Device] Next, the overall configuration of the liquid crystal device will be described with reference to FIGS. 16 and 17.
16 is a plan view of the TFT array substrate 100 together with the constituent elements formed thereon as viewed from the side of the counter substrate 20, and FIG. 17 is a plan view of FIG. It is a H'sectional view.

In FIG. 16, the TFT array substrate 100
The sealing material 51 is provided along the edge of the above, and the third light shielding film 53 as a frame made of the same or different material as the second light shielding film 23 is provided in parallel with the inside thereof. Has been. The data line driving circuit 101 and the external circuit connecting terminal 10 are provided in the area outside the sealing material 51.
2 is provided along one side of the TFT array substrate 100, and the scanning line driving circuit 104 is provided along two sides adjacent to this one side.

Further, a plurality of wirings 105 for connecting the scanning line driving circuits 104 provided on both sides of the image display area are provided on the remaining one side of the TFT array substrate 100. In addition, at least one position of the corner portion of the counter substrate 20 is provided with a conductive material 106 for electrically connecting the TFT array substrate 100 and the counter substrate 20. Then, as shown in FIG. 17, the counter substrate 20 having substantially the same contour as the sealing material 51 shown in FIG.
Are fixed to the TFT array substrate 100 by the sealing material 51.

[Electronic Device] As an example of an electronic device using the liquid crystal device according to the embodiment of the present invention, the configuration of a projection type display device will be described with reference to FIG. In FIG. 18, a projection type display device 1100 is provided with three liquid crystal devices of the above-described embodiment, each of which is a liquid crystal device 96 for RGB.
The schematic block diagram of the optical system of the projection type liquid crystal device used as 2R, 962G, and 962B is shown. The optical system of the projection display apparatus of this example includes a light source device 920 and a uniform illumination optical system 92.
3 has been adopted. Then, the projection display device includes a color separation optical system 924 as a color separation unit that separates the light flux W emitted from the uniform illumination optical system 923 into red (R), green (G), and blue (B). Three light valves 925R and 925R as modulation means for modulating each color light flux R, G and B
25G, 925B, a color synthesizing prism 910 as a color synthesizing means for re-synthesizing the modulated color light fluxes, and a projection lens unit 906 as a projection means for enlarging and projecting the synthesized light fluxes on the surface of the projection surface 1001. I have it. Further, a light guide system 927 for guiding the blue light flux B to the corresponding light valve 925B is also provided.

The uniform illumination optical system 923 includes two lens plates 921 and 922 and a reflection mirror 931. The two lens plates 921 and 922 are arranged so as to be orthogonal to each other with the reflection mirror 931 interposed therebetween. Uniform illumination optical system 923
The two lens plates 921 and 922 each include a plurality of rectangular lenses arranged in a matrix. The light flux emitted from the light source device 920 is emitted from the first lens plate 92.
It is divided into a plurality of partial light beams by one rectangular lens.
Then, these partial light fluxes are converted into three light valves 925R and 92R by the rectangular lens of the second lens plate 922.
Superimposed around 5G and 925B. Therefore, by using the uniform illumination optical system 923, even if the light source device 920 has an uneven illuminance distribution in the cross section of the emitted light flux, the three light valves 925R, 925G, and 925 are used.
It is possible to illuminate B with uniform illumination light.

Each color separation optical system 924 comprises a blue-green reflection dichroic mirror 941, a green reflection dichroic mirror 942 and a reflection mirror 943. First, in the blue-green reflection dichroic mirror 941, the blue light flux B and the green light flux G included in the light flux W are reflected at a right angle and head toward the green reflection dichroic mirror 942.
The red light flux R passes through this mirror 941, is reflected at a right angle by the rear reflection mirror 943, and is emitted from the emitting portion 944 of the red light flux R to the color combining prism 910 side. Next, in the green reflection dichroic mirror 942, of the blue and green light fluxes B and G reflected by the blue-green reflection dichroic mirror 941, only the green light flux G is reflected at a right angle, and the green light flux G emits light from the emitting portion 945. The light is emitted to the synthetic optical system side. Green reflective dichroic mirror 942
The blue light flux B that has passed through is emitted from the emitting portion 946 of the blue light flux B to the light guide system 927 side. In the present example, the distances from the emission part of the light flux W of the uniform illumination optical element to the emission parts 944, 945, 946 of the respective color light fluxes in the color separation optical system 924 are set to be substantially equal.

The red and green luminous fluxes R of the color separation optical system 924,
Condensing lenses 951 and 952 are arranged on the emission sides of the G emission sections 944 and 945, respectively. Therefore,
The red and green luminous fluxes R and G emitted from the respective emission portions are incident on these condenser lenses 951 and 952 and are collimated.
The red and green light fluxes R and G thus collimated enter the light valves 925R and 925G and are modulated, and image information corresponding to each color light is added. That is, these liquid crystal devices are switching-controlled by a driving unit (not shown) in accordance with image information, whereby the respective color lights passing therethrough are modulated. On the other hand, the blue light flux B is
The light is guided to the corresponding light valve 925B via the light guide system 927, and is similarly modulated here according to the image information. The light valves 925R and 925 of this example
G and 925B are incident side polarization means 960, respectively.
R, 960G, 960B and the output side polarization means 961R,
The liquid crystal light valve includes 961G, 961B and liquid crystal devices 962R, 962G, 962B arranged between them.

The light guide system 927 is provided with the emitting portion 94 for the blue light flux B.
6, a condenser lens 954 disposed on the emission side, an incident side reflection mirror 971, an emission side reflection mirror 972, an intermediate lens 973 disposed between these reflection mirrors, and a front side of the light valve 925B. It is composed of a condenser lens 953. The blue light flux B emitted from the condenser lens 954 passes through the light guide system 927 and the liquid crystal device 962B.
To be modulated. The optical path length of each color luminous flux, that is,
The liquid crystal devices 962R, 962G, 9
As for the distance to 62B, the blue light flux B has the longest distance, and thus the light quantity loss of the blue light flux becomes the largest. However, the light amount loss can be suppressed by interposing the light guide system 927. Each light valve 925R, 925G,
The respective colored light fluxes R, G, and B that have passed through 925B are incident on the color combining prism 910 and are combined here. Then, the light combined by the color combining prism 910 is enlarged and projected on the surface of the projection surface 1001 at a predetermined position via the projection lens unit 906.

In this example, the liquid crystal devices 962R and 962
G and 962B are the liquid crystal devices described with reference to FIGS. For example, when the liquid crystal device is used for a light valve of a projection type display device, the intensity of incident light is higher than when it is used as a direct-view type liquid crystal display device, and the alignment film is aligned when it is composed of an organic alignment film such as polyimide. Although the deterioration of the film is likely to occur remarkably, by forming the alignment film from an inorganic oblique deposition film such as silicon oxide as in this embodiment, a projection type display device with high display quality can be realized even after long-term use. can do. Also, FIGS.
In the liquid crystal device described with reference to FIG. 7, since the inorganic alignment film is formed by using the vapor deposition device according to the present invention shown in FIG. 1, the alignment angle of the column and the film thickness of the alignment film are not uniform on the substrate surface. The projection type display device provided with such liquid crystal devices 962R, 962G, and 962B is unlikely to be uniform, and therefore causes an abnormality in the alignment film (deterioration, nonuniformity of alignment film thickness, alignment angle, etc.). It is possible to realize a display device with high display quality without a decrease in contrast ratio due to poor alignment of liquid crystal.

[0058]

As described above in detail, according to the vapor deposition apparatus of the present invention, it is possible to perform vapor deposition with high uniformity in the orientation angle and orientation film thickness of the columnar structure (column) on the substrate surface. Therefore, it becomes possible to form a vapor deposition film of two or more layers on the surface of the substrate. In particular, it becomes possible to form two vapor-deposited films having different in-plane directions (azimuth directions) of the columns. Therefore, when an inorganic alignment film is deposited on a substrate of a liquid crystal device using such a vapor deposition device, liquid crystal alignment failure occurs due to non-uniform alignment properties (alignment angle, alignment film thickness) of the alignment film. It is difficult to obtain a substrate with a vapor deposition film (a substrate with an alignment film) in which the in-plane direction (azimuth angle direction) of a column of a two-layer vapor deposition film is different. For example, the pretilt angle of liquid crystal molecules can be controlled relatively arbitrarily. It becomes possible to do. Further, when the liquid crystal device is used as a display device, it is possible to realize a display device having a high display quality, which is less likely to cause a reduction in contrast ratio due to defective alignment of liquid crystal.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing a vapor deposition device as an embodiment of the present invention.

FIG. 2 is an explanatory diagram showing a positional relationship of main parts of the vapor deposition device of FIG.

FIG. 3 is an explanatory view showing one step of a vapor deposition method using the vapor deposition apparatus of FIG.

FIG. 4 is an explanatory diagram showing a step of the vapor deposition method following FIG.

FIG. 5 is an explanatory view showing a modified example of the substrate rotating method.

6 is an explanatory diagram showing a step of the vapor deposition method following FIG. 4. FIG.

FIG. 7 is an explanatory diagram showing a step of the vapor deposition method following FIG.

8 is an explanatory diagram showing a step of the vapor deposition method following FIG. 7. FIG.

FIG. 9 is a diagram showing an equivalent circuit of a liquid crystal device manufactured using the vapor deposition device of the present invention.

10 is a plan view showing a plurality of pixel groups adjacent to each other on the TFT array substrate of the liquid crystal device of FIG.

11 is a cross-sectional view taken along the line AA ′ of FIG.

12 is a diagram schematically showing a cross-sectional structure of a portion of the liquid crystal device of FIG. 9 where a first oblique vapor deposition film is formed.

FIG. 13 is a process drawing for explaining the method for manufacturing a liquid crystal device of the present invention.

FIG. 14 is a process diagram that illustrates the manufacturing method, following FIG. 13;

FIG. 15 is a process chart for explaining the manufacturing method, following FIG. 14;

FIG. 16 is a plan view showing the TFT array substrate of the liquid crystal device manufactured by the manufacturing method of the present invention together with the respective constituent elements formed thereon.

17 is a cross-sectional view taken along the line HH 'of FIG.

FIG. 18 is a schematic configuration diagram of a projection display device showing an example of an electronic apparatus using a liquid crystal device manufactured by the manufacturing method of the present invention.

[Explanation of symbols]

1 Vapor deposition equipment 2a First evaporation source 2b Second evaporation source 3 Steam distribution department 3a opening 4 Transport section 5 substrates 6 Operation switching control section 7 Transport control unit 8 evaporation chamber

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) G02F 1/1368 G02F 1/1368 F term (reference) 2H088 EA12 FA20 FA30 HA01 HA03 JA03 MA04 2H090 HB02Y HC01 HC18 HD14 JB02 KA02 MA06 MB06 2H092 JA24 JB56 MA56 NA04 PA01 PA02 QA05 4K029 AA08 AA09 AA24 BA46 BB02 CA01 DB15 EA01 KA01

Claims (10)

[Claims] 1. A vapor distribution including a first vapor deposition source and a second vapor deposition source for producing vapor of a vapor deposition substance, a vapor deposition material transport part capable of transporting a vapor deposition material, and an opening through which the vapor can flow. The vapor deposition material transporting portion is capable of transporting the vapor deposition material transferable from a vapor deposition possible state in which the vapor deposition material at least faces the opening of the vapor circulation portion to a vapor deposition incapable state not facing the opening. A vapor deposition apparatus comprising: a transport switching means for operating the vapor deposition source, and a vapor deposition source operation switching means for operating either the first vapor deposition source or the second vapor deposition source. 2. The transport switching means transports the material to be vapor-deposited in such a manner as to traverse the opening to switch the material to be vapor-deposited from a passing state passing through the opening to a non-passing state, The vapor deposition apparatus according to claim 1, wherein the vapor deposition target material is capable of vapor deposition in the state, and the vapor deposition target material is not capable of vapor deposition in the non-passing state. 3. The transport switching means transports the material to be vapor-deposited to a vapor deposition enabled state when the first vapor deposition source is operating, and a transport state from the vapor deposition enabled state to the vapor deposition disabled state. The substrate between a second transport state of transporting the substrate to a second transport state and a third transport state of transporting the material to be vapor-deposited from the non-depositable state to the vapor depositable state when the second vapor deposition source is operating. The vapor deposition apparatus according to claim 1 or 2, wherein the transport is switched. 4. The transport switching means transports the material to be vapor-deposited in a predetermined direction in a first direction, and conveys the material to be vapor-deposited in a direction opposite to the first direction. The vapor deposition apparatus according to any one of claims 1 to 3, wherein the transfer of the substrate is switched between and. 5. The first vapor deposition source and the second vapor deposition source are composed of a reference line connecting the vapor deposition source and the position of the center of gravity of the opening surface of the vapor flow section, and a normal line to the vapor deposition surface of the vapor deposition material. The vapor deposition apparatus according to any one of claims 1 to 4, wherein vapor deposition reference angles defined by the formed angles are different from each other. 6. The vapor deposition apparatus according to claim 1, further comprising vapor deposition material rotating means for rotating the vapor deposition material in the same plane. 7. The vapor deposition material rotating means rotates the vapor deposition material in the same plane when the vapor deposition material is in the non-depositable state. Vapor deposition equipment. 8. A vapor deposition method using the vapor deposition apparatus according to claim 1, wherein the vapor deposition material is disposed in the vapor deposition material transporting portion, and the vapor deposition material is transported. While operating the first vapor deposition source to perform the first vapor deposition through the vapor circulation unit, the first vapor deposition step is performed, and the second vapor deposition source is activated to perform the second vapor deposition through the vapor circulation unit. And a second vapor deposition step to be performed. 9. The transport switching means transports the material to be vapor-deposited to a state capable of vapor deposition in the first vapor deposition step,
After the completion of the vapor deposition step, the vapor deposition material is conveyed to a non-depositable state, and in the second vapor deposition step, the vapor deposition material is conveyed again from the non-depositable state to the vapor deposition possible state. The vapor deposition method according to claim 8. 10. A method of manufacturing a liquid crystal device, comprising a structure in which a liquid crystal layer is sandwiched between a pair of substrates facing each other, and an inorganic alignment film is formed on each surface of the pair of substrates on the liquid crystal layer side. A method for manufacturing a liquid crystal device, comprising forming the inorganic alignment film on the surface of the substrate by vapor deposition using the vapor deposition device according to any one of claims 1 to 7.