JP2003136010A - Apparatus and method for coat processing - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an apparatus and method for coat processing for formation of a film improved in a uniformity of the film thickness over the whole surface of the substrate. SOLUTION: In a coat processing unit 11 in this apparatus, there are provided a spin chuck 71 for holding a wafer W nearly horizontally, a motor 72 for rotating the spin chuck 71, a nozzle 81 for discharging coating liquid nearly in the center of the wafer W, and a pre-wet nozzle 81a for discharging a thinner having a high coating liquid wettability to the wafer W in a predetermined position between the center of the wafer W and the peripheral edge. The thinner is discharged for a pre-wet treatment on the peripheral part of the wafer W, and the coating liquid is discharged on about the center of the surface of the rotating wafer W. The coating liquid is spread all over the surface of the wafer W, forming an improved film of a uniform thickness.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a coating processing apparatus and a coating processing method used for forming a film such as an interlayer insulating film or a photoresist film on a substrate such as a semiconductor wafer.

[0002]

2. Description of the Related Art In a semiconductor device manufacturing process,
A SOD (spin on dielectric) system is used to form a dielectric film such as an interlayer insulating film by applying a coating liquid to a semiconductor wafer to form a coating film and then performing physical treatment such as heating. Here, as the method of forming the coating film,
Generally, a method (spin coating) is used in which a coating solution is applied to the substantially center of a stopped or rotating semiconductor wafer, and then the semiconductor wafer is rotated at a predetermined number of rotations to spread the application solution over the entire semiconductor wafer. ing.

Here, as a method for uniformly applying a coating liquid onto a semiconductor wafer and simultaneously reducing the amount of the coating liquid used,
A method of performing a so-called pre-wetting process, in which a highly wettable solvent such as thinner is applied to the surface of a semiconductor wafer prior to the application of a coating liquid, is known. Is increased. This pre-wet process is also performed by discharging a solvent such as thinner to the approximate center of the semiconductor wafer, rotating the semiconductor wafer, and spreading it over the entire semiconductor wafer.

[0004]

However, in the conventional pre-wetting process, the wettability is likely to vary between the central portion and the outer peripheral portion of the semiconductor wafer, and the film thickness uniformity of the coating film formed thereby is set to a predetermined value. It is difficult to keep the standard. This tendency has become more prominent with the recent increase in the diameter of semiconductor wafers. Specifically,
The film thickness of the coating film formed on the semiconductor wafer becomes thicker at the central portion and the outer peripheral portion of the semiconductor wafer, and becomes thinner at the intermediate portion (the intermediate portion between the center and the peripheral edge of the semiconductor wafer). Further, when the discharge amount of the coating liquid is reduced, there is a problem that it becomes more difficult to control the film thickness of the intermediate portion of the semiconductor wafer.

The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a coating processing apparatus and a coating processing method capable of forming a coating film having excellent film thickness uniformity on the entire surface of a substrate. To aim. It is another object of the present invention to provide a coating treatment apparatus and a coating treatment method capable of forming a coating film having excellent film thickness uniformity on the entire surface of a substrate with a small amount of coating liquid.

[0006]

That is, according to a first aspect of the present invention, a coating treatment apparatus for forming a coating film by rotating a substrate to spread a coating liquid applied on the substrate over the entire surface of the substrate. A holding means for holding the substrate substantially horizontally, a rotating means for rotating the holding means, a coating liquid discharge nozzle for discharging a coating liquid substantially at the center of the substrate held by the holding means, and the holding means. And a treatment liquid discharge nozzle for discharging a treatment liquid having high wettability to the substrate at a predetermined position between the center and the peripheral edge of the substrate held by the means. It

According to a second aspect of the present invention, there is provided a coating treatment method for forming a coating film on a substrate, the treatment having high wettability to the substrate at a predetermined position between the center and the periphery of the rotating substrate. A first step of discharging the liquid to enhance the wettability of the coating liquid on the outer peripheral portion of the substrate; a second step of discharging the coating liquid to approximately the center of the substrate; and rotating the substrate at a predetermined rotation speed. And a third step of forming a coating film by spreading the coating liquid ejected onto the substrate over the entire surface of the substrate to provide a coating treatment method.

According to a third aspect of the present invention, there is provided a coating treatment method for forming a coating film on a substrate, wherein the coating liquid is discharged substantially at the center of the surface of the rotating substrate so that the coating liquid is spread over the entire surface of the substrate. A coating process comprising forming a coating film by discharging a processing liquid having high wettability to the substrate at a predetermined position between the center and the peripheral edge of the substrate held by the holding means while expanding. A processing method is provided.

According to the coating processing apparatus and the coating processing method according to the first to third aspects, the wettability of the coating liquid to the substrate can be made uniform between the central portion and the outer peripheral portion of the substrate. For this reason, it becomes possible to obtain a coating film with reduced thickness unevenness and excellent film thickness uniformity.
Further, since the coating liquid spreads smoothly, it is possible to reduce the amount of the coating liquid used.

According to a fourth aspect of the present invention, there is provided a coating treatment apparatus for spreading a coating liquid coated on the substrate over the entire surface of the substrate to form a coating film by rotating the substrate, wherein the substrate is substantially Holding means for holding horizontally, rotating means for rotating the holding means, a first coating liquid discharge nozzle for discharging the coating liquid substantially at the center of the substrate held by the holding means, and the first coating liquid The coating liquid is discharged to a predetermined position between the center and the peripheral edge of the substrate held by the holding means so that the thickness distribution of the coating film formed by the coating liquid discharged from the discharge nozzle onto the substrate becomes uniform. And a second coating liquid discharge nozzle.

According to a fifth aspect of the present invention, there is provided a coating treatment method for forming a coating film on a substrate, which comprises a first step of discharging the coating liquid substantially at the center of the surface of the substrate which is stopped or rotated,
Between the center and the periphery of the substrate so that the coating liquid discharged onto the substrate is spread over the entire surface of the substrate when the substrate is rotated at a predetermined number of revolutions so that the thickness distribution of the coating film becomes uniform. And a second step of further discharging the coating liquid to a predetermined position.

According to the coating processing apparatus and the coating processing method of the fourth and fifth aspects, the coating liquid discharged and spread on the substrate from a predetermined position between the substantially center and the peripheral edge of the substrate is substantially at the center of the substrate. Since the unevenness of the thickness of the coating film formed by the coating liquid discharged to and spread toward the outer peripheral portion is repaired, the coating film having excellent film thickness uniformity can be obtained. As described above, according to the coating treatment apparatus and the coating treatment method of the present invention, it is possible to form a high-quality coating film having excellent film thickness uniformity.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be specifically described below with reference to the drawings. Here, a case where the present invention is applied to a coating processing unit mounted in an SOD system to form an interlayer insulating film on a semiconductor wafer will be described.

FIG. 1 is a plan view of the SOD system described above, FIG. 2 is a side view of the SOD system shown in FIG. 1, and FIG. 3 shows a processing unit group installed in the SOD system shown in FIG. It is a side view.

The SOD system generally has a processing section 1, a side cabinet 2, and a carrier station (CSB) 3. As shown in FIGS. 1 and 2, the processing section 1 is provided with coating processing units (SCT) 11 and 12 on the front upper side. Further, below the coating processing units (SCT) 11 and 12, there are provided chemical units 13 and 14 containing chemicals and the like.

As shown in FIGS. 1 and 3, in the central portion of the processing unit 1, there are provided processing unit groups 16 and 17 each having a plurality of processing units stacked in multiple stages.
A wafer transfer mechanism (PRA) 18 for moving up and down to transfer a semiconductor wafer (wafer) W is provided.

The wafer transfer mechanism (PRA) 18 extends in the Z direction, has a cylindrical support 51 having vertical walls 51a and 51b and a side opening 51c between them, and a cylindrical support 51 inside thereof. And a wafer carrier 52 that is provided so as to be vertically movable in the Z direction. The cylindrical support 51 is rotatable by the rotational driving force of the motor 53,
Along with that, the wafer transfer body 52 is also rotated integrally.

The wafer carrier 52 is equipped with a carrier base 54 and three wafer carrier arms 55, 56 and 57 which can be moved back and forth along the carrier base 54, and the wafer carrier arms 55 to 57. Is a side surface opening 51 c of the cylindrical support 51.
Has a size capable of passing through. These wafer transfer arms 55 to 57 can be independently moved back and forth by a motor and a belt mechanism built in the transfer base 54. The wafer carrier 52 is moved up and down by driving a belt 59 with a motor 58. Incidentally, reference numeral 40 is a drive pulley,
Reference numeral 41 is a driven pulley.

As shown in FIG. 3, the processing unit group 16 on the left side includes a hot plate unit (LHP) 19 for low temperature, two hardening (curing) processing units (DLC) 20, and 2 in order from the upper side. Aging unit (D
AC) 21 and are laminated. The processing unit group 17 on the right side includes two baking processing units (DLB) 22, a low temperature hot plate unit (LHP) 23, two cooling plate units (CPL) 24, and a delivery unit in order from the top. Unit (TRS) 2
5 and a cooling plate unit (CPL) 26 are laminated. The delivery unit (TR
S) 25 can also have the function of a cooling plate.

The side cabinet 2 has a bubbler (Bub) 27 for supplying a chemical solution and a trap (TRAP) 28 for cleaning exhaust gas. Further, below the bubbler (Bub) 27, a power supply source (not shown) and a chemical liquid chamber (not shown) for storing a chemical liquid such as HMDS (hexamethyldisilane) or a gas such as ammonia gas (NH ₃ ). And a drain 29 for discharging the waste liquid of the processing liquid used in the SOD system.

In the SOD system configured as described above, for example, when the interlayer insulating film is formed on the wafer W by the sol-gel method, the wafer W is cooled plate unit (CPL) 24/26 → coating process. Unit (SCT) 11 ・ 12 → Aging unit (DAC)
21 → low temperature hot plate unit (LHP) 19
-Transfer in the order of 23 → bake processing unit (DLB) 22 and process.

When the interlayer insulating film is formed on the wafer W by the silk method and the speed film method, the wafer W is cooled by the cooling plate unit (CPL) 24/26.
-> Coating processing unit (SCT) 12 (coating of adhesion promoter)-> Low temperature hot plate unit (LHP) 19, 23-> Coating processing unit (SCT) 1
1 (application of this chemical solution) → low temperature hot plate unit (LHP) 19 ・ 23 → bake processing unit (DLB)
The processing is carried out in the order of 22 → curing processing unit (DLC) 20 and processed.

Further, when the interlayer insulating film is formed on the wafer W by the Fox method, the wafer W is cooled plate unit (CPL) 24/26 → coating processing unit (SCT) 11/12 → hot plate unit for low temperature. (LHP) 19 ・ 23 → Bake processing unit (DL
B) It is conveyed and processed in the order of 22 → curing processing unit (DLC) 20. The material for the interlayer insulating film formed by these various methods is not limited, and various organic, inorganic, and hybrid materials can be used.

Next, the coating processing unit (SC
T) 11.12 will be described. Here, the coating processing unit (SCT) 11 is used for coating the chemical liquid for forming the interlayer insulating film, and the coating processing unit (SC
T) 12 is used for coating the adhesion promoter, and the coating processing unit (SCT) 11 will be described in detail as an example. Figure 4 shows the coating unit (SC
FIG. 5 is a schematic plan view showing the overall configuration of T) 11. FIG.

An annular coater cup (CP) is arranged in the center of the coating processing unit (SCT) 11, and a spin chuck 71 is arranged inside the coater cup (CP). The spin chuck 71 is rotationally driven by the drive motor 72 while the wafer W is fixedly held by vacuum suction. Drain 7 at the bottom of the coater cup (CP)
3 is provided, and an unnecessary coating liquid and a rinse liquid that is discharged to the back surface of the wafer W to back-rinse after coating the coating liquid are discharged from here.

The drive motor 72 is arranged so as to be able to move up and down in an opening 74a provided in the unit bottom plate 74, and via a cap-shaped flange member 75 made of, for example, aluminum, a lift drive mechanism 76 made of, for example, an air cylinder and a lift guide. Combined with 77. Drive motor 72
A cylindrical cooling jacket 78 made of, for example, SUS is attached to the side surface of the, and the flange member 75 is attached so as to cover the upper half of the cooling jacket 78.

At the time of applying the application liquid, the lower end 75a of the flange member 75 is near the peripheral edge of the opening 74a and the unit bottom plate 7 is provided.
4, the inside of the unit is sealed.
When the wafer W is transferred between the spin chuck 71 and one of the wafer transfer arms 55 to 57 of the wafer transfer mechanism (PRA) 18, the lift drive mechanism 76 lifts the drive motor 72 and the spin chuck 71 upward. Therefore, the lower end of the flange member 75 is the unit bottom plate 74.
It is supposed to float from.

The coating processing unit (SCT) 11 is provided with a coating liquid discharge nozzle 81 for discharging the coating liquid onto the surface of the wafer W. The coating liquid discharge nozzle 81 is provided at the tip of the first scan arm 82. It is removably attached via the nozzle holder 83, and is attached to the coating liquid discharge nozzle 81.
The coating liquid is supplied from the coating liquid supply unit 95. The first scan arm 82 is attached to the upper end of a vertical support member 85 that is horizontally movable on a guide rail 84 laid in one direction (Y direction) on the unit bottom plate 74, and a Y-axis drive mechanism 96. By vertical support member 8
It is adapted to move in the Y direction integrally with the unit 5. The coating liquid discharge nozzle 81 can be moved in the vertical direction (Z direction) by a Z-axis drive mechanism 97.

The first scan arm 82 is also movable in the X direction perpendicular to the Y direction in order to selectively attach the coating liquid discharge nozzle 81 in the nozzle standby portion 98, and is driven by an X direction drive mechanism (not shown). It also moves in the X direction. Further, the tip of the coating liquid discharge nozzle 81 is inserted into the opening 98a of the solvent atmosphere chamber in the nozzle standby portion 98 and exposed to the atmosphere of the solvent therein, whereby the coating liquid at the tip of the coating liquid discharge nozzle 81 solidifies or It does not deteriorate. Further, a plurality of coating liquid discharge nozzles 81
Is provided, and these nozzles can be selectively used according to the type of coating liquid.

The coating processing unit (SCT) 11 is provided with a pre-wet nozzle 81a for discharging the solvent contained in the coating liquid such as thinner to the wafer W in order to perform the pre-wet processing on the wafer W. The pre-wet nozzle 81a is detachably attached to the tip of the second scan arm 82a via a nozzle holder 83a, and the pre-wet nozzle 81a is supplied with thinner from a thinner supply unit (not shown). ing. The second scan arm 82a is attached to a vertical support member 85a that is horizontally movable on the guide rail 84, and is moved by the Y-axis drive mechanism 96 in the Y direction integrally with the vertical support member 85a. . The pre-wet nozzle 81a can be moved in the vertical direction (Z direction) by the Z-axis drive mechanism 97. The pre-wet nozzle 81a and the like are not shown in FIG. This is because it overlaps with the coating liquid discharge nozzle 81 and the like as viewed in the Y direction.

Further, on the guide rail 84, a vertical support member 124 that supports the third scan arm 121 and is movable in the Y direction is provided, and the wafer W is provided at the tip of the third scan arm 121. A rinse nozzle 122 for side rinse, which discharges the rinse liquid to dissolve and remove the coating liquid and cleans it, is attached to the peripheral portion and the side edge portion of the.

The third scan arm 121 and the rinse nozzle 122 are set by the Y-axis drive mechanism 96 on the spin chuck 71 and the rinse nozzle standby position (solid line position) set to the side of the coater cup (CP). The rinsing liquid (cleaning liquid) discharge position (the position indicated by the dotted line) set right above the peripheral portion of the wafer W is integrally translated or linearly moved. The rinse nozzle 12 for back rinse is provided at a peripheral position below the spin chuck 71.
3 is provided, and the rinse liquid is discharged toward the back surface of the wafer W so that the back surface of the wafer W can be cleaned. As a rinse liquid (cleaning liquid),
A volatile solvent contained in the coating liquid, such as thinner, is preferably used.

The operation of the drive system of the coating processing unit (SCT) 11 is controlled by the controller 90. That is,
Drive motor 72, Y-axis drive mechanism 96, Z-axis drive mechanism 9
7, a coating liquid supply unit 95, a thinner supply unit (not shown) for supplying thinner to the pre-wet nozzle 81a, the rinse nozzle 122, and the back rinse nozzle 123, and the like, and the control unit 9
Driven and controlled by command 0.

The coating processing unit (SCT) 12
Is a coating processing unit (SCT) 1 except that it does not have a pre-wet nozzle 81a and members related thereto.
It has the same structure as 1. Coating processing unit (SCT)
In 12, the adhesion promoter is discharged from the coating liquid discharge nozzle 81.

Next, the step of forming the interlayer insulating film by the silk method and the speed film method will be described. From the carrier station (CSB) 3 to the delivery unit (T
The wafer W transferred to the RS) 25 is transferred to the cooling plate units (CPL) 24 and 26 by the wafer transfer arms 55 to 57 of the wafer transfer mechanism (PRA) 18 and cooled. In this way, by keeping the temperature of the wafer W before coating constant, the film thickness and film quality of the formed coating film can be homogenized. Next, the wafer W is transferred to the low-viscosity coating processing unit (SCT) 12, and the adhesion promoter is spin-coated as the first coating liquid. The adhesion of the film is promoted by applying this adhesion promoter prior to the application liquid.

The form of loading the wafer W into the coating processing unit (SCT) 12 and unloading the wafer W after processing in the coating processing unit (SCT) 12 is as follows. This is the same as the loading and unloading of the wafer W after processing in the coating processing unit (SCT) 11, which will be described together with the processing steps in the coating processing unit (SCT) 11.

The wafer W which has completed the coating process of the adhesion promoter is carried out of the coating processing unit (SCT) 12 by using one of the wafer transfer arms 55 to 57 and is cooled by the cooling plate unit (CPL) 24.
・ It is carried into one of the 26 and temperature controlled.

Cooling plate unit (CPL) 2
The wafer W whose temperature has been adjusted in any of 4.26 is then transferred to the high-viscosity coating processing unit (SCT) 11, and the coating liquid for the interlayer insulating film is applied by spin coating. FIG. 6 shows the coating processing unit (SCT) 11
3 is a flowchart showing an embodiment of a series of processing steps in FIG. In addition, FIG. 7 is an explanatory diagram showing the discharge form of the coating liquid and thinner, and the process of forming the coating film.

First, when the wafer W is carried by any of the wafer carrying arms 55 to 57 to a position right above the coater cup (CP) in the coating processing unit (SCT) 11 (step 1), the wafer W is For example, vacuum suction is performed by the spin chuck 71 that has been lifted by the lift drive mechanism 76 composed of an air cylinder and the lift guide 77 (step 2). The wafer transfer mechanism (PRA) 18 pulls back the wafer transfer arms 55 to 57 that have entered the coating processing unit (SCT) 12 from the inside of the coating processing unit (SCT) 11 after the wafer W is vacuum-sucked by the spin chuck 71 (step 3) Thus, the delivery of the wafer W to the coating processing unit (SCT) 11 is completed.

Next, the spin chuck 71 is lowered until the wafer W is positioned at a predetermined height in the coater cup (CP) (step 4), and the nozzle holders 83, 83a retracted to the nozzle standby portion 98 are removed. The movement is started (step 5). The movement of the nozzle holders 83 and 83a is performed along the Y direction, and the nozzle holder 83 is moved until the tip of the coating liquid discharge nozzle 81 reaches almost the center of the wafer W, and the nozzle holder 83a is also moved. The tip of the pre-wet nozzle 81a is a predetermined value between the center and the periphery of the wafer W,
For example, it is moved until it reaches the intermediate position. This state is shown in FIG.

Next, the spin chuck 71 is rotated at a rotation speed capable of forming a thin film by the thinner viscosity, and the thinner is discharged from the pre-wet nozzle 81a onto the rotating wafer W, as shown in FIG. 7 (b). The outer peripheral portion of the wafer W is wetted with a thinner to form a solvent thin film (step 6). The wettability of the coating liquid is enhanced at the outer peripheral portion of the wafer W thus pre-wet processed.

The rotation of the spin chuck 71 is once stopped (step 7), and a predetermined amount of the coating liquid is discharged from the coating liquid discharge nozzle 81 to the substantially center of the stopped wafer W (step 8, FIG. 7C). Subsequently, the wafer W is rotated at a predetermined rotation speed to spread the coating liquid on the entire wafer W (step 9, FIG. 7D). At this time, the outer peripheral portion of the wafer W is spread while the solvent thin film and the coating liquid are mixed and mixed at the interface of the solvent thin film, so that the coating liquid is easily wetted and the coating liquid is easily spread. This makes it possible to form a coating film having a uniform film thickness, and since the coating liquid spreads smoothly, it is possible to reduce the coating amount.

In place of steps 7 to 9, after the thinner discharge in the pre-wet process is completed, the wafer W is kept rotating while the coating liquid discharge nozzle 81 applies a predetermined amount to the substantially center of the wafer W. The liquid may be discharged to form a coating film (step 7 ').

Further, instead of steps 6 to 9, a predetermined amount of the coating liquid is discharged from the coating liquid discharge nozzle 81 to the substantially center of the wafer W while the wafer W is rotated, and the pre-wet nozzle 81a is also discharged. Alternatively, a method of forming a coating film by ejecting thinner between the center and the periphery of the wafer W may be used (step 6 '). When the method of step 6 ′ is used, it is necessary to adjust the timing of the thinner discharge from the pre-wet nozzle 81a so that the thinner is not discharged from the coating liquid spreading on the wafer W.

It should be noted that it is also preferable to carry out the processing of steps 6 to 9 or step 6 and step 7'or step 6'after dividing step 5 described above into steps 5a to 5c described below. . That is, first, the nozzle holder 83a is attached to the pre-wet nozzle 8
The tip of 1a is moved so as to reach the approximate center of the wafer W (step 5a). At this time, the nozzle holder 8
3 is simultaneously moved to the rinse nozzle 122 side. The wafer W is rotated and a thinner is ejected from the pre-wet nozzle 81a onto the wafer W to perform a pre-wet process on the entire surface of the wafer W (step 5b).

Next, the nozzle holder 83 is moved so that the tip of the coating liquid discharge nozzle 81 is located substantially at the center of the wafer W, and the nozzle holder 83a is moved so that the tip of the pre-wet nozzle 81a is located on the wafer W. It is moved until it reaches a predetermined value between the center and the peripheral edge, for example, an intermediate position (step 5c). After that, the steps 6 to 9 described above,
Alternatively, the processing according to step 6 and step 7'or step 6'can be performed. By performing such a pre-wetting process for the entire wafer W in advance, the coating liquid is likely to spread uniformly over the entire wafer W, and the amount of the coating liquid used can be further reduced.

After spreading the coating liquid over the entire wafer W,
The film thickness of the coating film formed by changing the rotation speed of the wafer W may be adjusted. When the formation of the coating film is completed in this way, the coating liquid discharge nozzle 81 and the pre-wet nozzle 81a are evacuated to the outside of the coater cup (CP) (step 10), and then, if necessary, from the back rinse nozzle 123 to the thinner. Is discharged toward the back surface of the wafer W rotating at a predetermined rotation speed to perform back rinse processing (step 11), and thinner is discharged from the rinse nozzle 122 to the side edge portion of the wafer W to perform side rinse processing. (Step 12).

After the processing in the coating processing unit (SCT) 11 is completed, the wafer W is subjected to the coating processing unit (SCT) in the reverse order of the procedure when the wafer W is carried into the coating processing unit (SCT) 11. It is carried out from 11 (step 13). After that, the wafer W is transferred to a low temperature hot plate unit (LHP) 19/23 and subjected to heat treatment there. Hot plate unit for low temperature (L
In HP) 19 and 23, for example, a component contained in the coating film and evaporated at a relatively low temperature, for example, water is removed.

Next, the wafer W is subjected to a baking treatment unit (DL) depending on the solvent contained in the used main coating liquid.
B) It is conveyed to 22 and the heat treatment is performed there, and then it is conveyed to the curing treatment unit (DLC) 20 and the curing treatment is performed there. Even if the wafer W is directly transferred from the low temperature hot plate unit (LHP) 19/23 to the hardening processing unit (DLC) 20 without using the baking processing unit (DLB) 22, the hardening processing is performed. Good.

In the baking processing unit (DLB) 22, a low temperature hot plate unit (LHP) 19 is used.
The heat treatment is performed at a temperature higher than the treatment temperature in 23 and lower than the treatment temperature in the subsequent curing treatment unit (DLC) 20. In this way, the solvent components and the like contained in the main coating liquid, which could not be removed by the heat treatment in the low temperature hot plate units (LHP) 19 and 23, are removed by evaporation and sublimation. Further, in the curing processing unit (DLC) 20, after heat treatment at a temperature higher than that of the baking processing unit (DLB) 22, cooling treatment is performed to cure the coating film of the present coating liquid, and the interlayer insulating film Is formed.

The wafer W which has been subjected to the curing processing is transferred from the curing processing unit (DLC) 20 to the wafer transfer arms 55 to 57.
Carried out by, for example, a delivery unit (TRS) 2
It is returned to the carrier station (CSB) 3 through 5. Thus, a series of steps for forming the interlayer insulating film and the like on the wafer W is completed.

Next, another embodiment of the coating processing unit (SCT) 11 will be described with reference to the schematic plan view of FIG. Coating processing unit (SCT) 11 shown in FIG.
In a, the nozzle holder 83a is different from the coating processing unit (SCT) 11 in that the nozzle holder 83a is provided with a coating liquid replenishing nozzle 81b, which is a second coating liquid discharging nozzle, in place of the pre-wet nozzle 81a. . In the coating processing unit (SCT) 11a, the coating liquid discharge nozzle 8
No. 1 and the coating liquid replenishing nozzle 81b are provided with a nozzle standby portion 98, and a predetermined amount of the coating liquid is supplied from the coating liquid supplying portion 95 to the coating liquid replenishing nozzle 81b.

In this coating processing unit (SCT) 11a, the coating liquid discharge nozzle 81 is moved to almost the center of the wafer W, and the coating liquid replenishment nozzle 81b is moved to the intermediate position between the center and the peripheral edge of the wafer W. , The coating liquid discharge nozzle 81 and the coating liquid replenishing nozzle 8 while rotating the wafer W.
1b to discharge a predetermined amount of coating liquid simultaneously to form a coating film, or to discharge a predetermined amount of coating liquid from the coating liquid discharge nozzle 81 to the center of the stopped wafer W and then rotate the wafer W and apply the coating liquid. The coating film can be formed on the wafer W by any of the methods of forming a coating film by discharging a predetermined amount of the coating liquid from the liquid replenishing nozzle 81b.

Only by discharging the coating liquid from the coating liquid discharge nozzle 81, the thickness of the coating film tends to be thin in the middle portion of the wafer W. However, when such a method is used, Since the coating liquid is discharged from the coating liquid replenishing nozzle 81b to the intermediate portion of the wafer W, which tends to have a small thickness, the coating film can have a uniform thickness.

The embodiment of the coating processing unit (SCT) 11 is not limited to the above embodiment. For example, in the coating processing unit (SCT) 11, as shown in the plan view of FIG. 9, the nozzle holder 83 has a shape elongated in the Y direction (referred to as a nozzle holder 83 ′), and the nozzle holder 83 ′ is attached to the nozzle holder 83 ′. It is also possible to provide the pre-wet nozzle 81a. In this case, if the nozzle holder 83 'is provided with an expansion / contraction mechanism in the Y direction, the distance between the coating liquid discharge nozzle 81 and the pre-wet nozzle 81a can be freely changed. When the distance between the coating liquid discharge nozzle 81 and the pre-wet nozzle 81a is constant, it is not necessary to provide the nozzle holder 83 'with such a stretching mechanism.

As shown in the schematic plan view of FIG.
It is also possible to make the nozzle holder 83 long in the Y direction (referred to as a nozzle holder 83 ″) and provide the pre-wet nozzle 81a and the coating liquid replenishing nozzle 81b on the nozzle holder 83 ″. In this case, the nozzle holder 83 ″
When the expansion / contraction mechanism in the Y direction is provided on the coating liquid discharge nozzle 8
1 and the prewetting nozzle 81a or the coating liquid replenishing nozzle 81b can be freely changed. In this way, when the coating solution discharge nozzle 81, the pre-wet nozzle 81a, and the coating solution replenishing nozzle 81b are provided in one coating processing unit (SCT) 11, the coating film is formed by the pre-wetting process on the outer peripheral portion of the wafer W. Coating film replenishment nozzle 8
The replenishment of the coating solution from 1b can also improve the film thickness uniformity of the coating film.

It should be noted that three nozzle scan arms to which the coating liquid discharge nozzle 81, the pre-wet nozzle 81a and the coating liquid replenishing nozzle 81b are individually mounted may be mounted on the guide rail 84.

As described above, the coating processing apparatus of the present invention is applied to the coating processing unit (SC
T) 11 and 12, the coating treatment method has been described, but the present invention is not limited to such an embodiment. For example, the coating treatment apparatus of the present invention,
It can be used as a resist coating processing apparatus for a photoresist or the like used in a photolithography process for forming an electrode pattern on the wafer W. In this case, the amount of resist required per wafer W is reduced, It is possible to reduce the production cost. The substrate to be processed is not limited to the semiconductor wafer, and may be another substrate such as an LCD substrate.

[0059]

As described above, according to the present invention, the wettability of the coating liquid to the substrate is made uniform in the central portion and the outer peripheral portion of the substrate by performing the pre-wetting treatment on the outer peripheral portion of the substrate. be able to. As a result, it is possible to obtain an effect that unevenness in the thickness of the coating film is reduced and a coating film having excellent film thickness uniformity can be obtained. Further, since the coating liquid spreads smoothly, it is possible to reduce the amount of the coating liquid used, and it is also possible to obtain the effect of reducing the production cost. Furthermore, when the coating liquid is applied to the substrate from a predetermined position between the substantially center and the peripheral edge of the substrate, the coating liquid is discharged to the substantially center of the substrate and is formed by the coating liquid spreading toward the outer peripheral portion. Since the unevenness of the thickness of the coating film is repaired, it is possible to obtain the coating film having excellent film thickness uniformity. Furthermore, prior to the application of the coating liquid, a pre-wetting process is performed on the entire surface of the substrate, or a pre-wetting process on the outer peripheral portion of the substrate and a process of discharging the coating liquid onto the substrate from a predetermined position between the approximate center and the peripheral edge of the substrate. By using in combination, the film thickness uniformity of the formed coating film can be further improved.

[Brief description of drawings]

FIG. 1 is a plan view showing a schematic structure of an SOD system.

FIG. 2 is a side view of the SOD system shown in FIG.

FIG. 3 is another side view of the SOD system shown in FIG.

FIG. 4 is a schematic cross-sectional view of one embodiment of a coating processing unit (SCT).

FIG. 5 is a schematic plan view showing an embodiment of a coating processing unit (SCT).

FIG. 6 is an explanatory diagram (flow chart) showing an embodiment of a series of processing steps in a coating processing unit (SCT).

FIG. 7 is an explanatory diagram showing a discharge form of a coating liquid and a thinner and a process of forming a coating film.

FIG. 8 is a schematic plan view showing another embodiment of a coating processing unit (SCT).

FIG. 9 is a plan view showing another embodiment of a coating liquid discharge nozzle and the like in a coating processing unit (SCT).

FIG. 10 is a plan view showing still another embodiment of a coating liquid discharge nozzle and the like in a coating processing unit (SCT).

[Explanation of symbols]

1; processing unit 2; side cabinet, 3; Carrier Station (CSB) 11.11a.12; coating processing unit (SCT) 16 ・ 17; Processing unit group 18: Wafer transfer mechanism (PRA) 55-57; Wafer transfer arm 71; Spin chuck 72; Drive motor 81; coating liquid discharge nozzle 81a; pre-wet nozzle 81b; coating liquid replenishing nozzle 83.83'.83 "; nozzle holder 122; Rinse nozzle W: Semiconductor wafer

Continued front page    F term (reference) 2H025 AA18 AB16 EA05                 4D075 AC65 BB63X CA23 CA47                       DA06 DB14 DC22 EA21 EA45                 4F042 AA07 CB03 DA03 DB01 DB41                       EB09 EB13 EB18 EB29                 5F046 JA02 JA09                 5F058 BF46 BH01 BJ02

Claims (11)

[Claims] 1. A coating processing apparatus for rotating a substrate to spread a coating liquid coated on the substrate over the entire surface of the substrate to form a coating film, comprising: a holding unit for holding the substrate substantially horizontally; Rotating means for rotating the holding means, a coating liquid discharge nozzle for discharging the coating liquid substantially at the center of the substrate held by the holding means, and a predetermined position between the center and the peripheral edge of the substrate held by the holding means And a treatment liquid ejecting nozzle for ejecting a treatment liquid having high wettability to the substrate, the coating treatment device. 2. The coating processing apparatus according to claim 1, wherein the processing liquid contains a solvent contained in the coating liquid. 3. The coating process according to claim 1, further comprising another processing liquid discharge nozzle that discharges the processing liquid substantially at the center of the substrate held by the holding means. apparatus. 4. A coating treatment method for forming a coating film on a substrate, wherein a treatment liquid having high wettability with respect to the substrate is discharged at a predetermined position between the center and the peripheral edge of the rotating substrate, and the outer circumference of the substrate is discharged. First step of improving the wettability of the coating liquid in a portion, a second step of discharging the coating liquid to a substantially central portion of the substrate, and a coating applied to the substrate by rotating the substrate at a predetermined rotation speed And a third step of forming a coating film by spreading the liquid over the entire surface of the substrate. 5. The coating treatment method according to claim 4, further comprising a pretreatment step of discharging the treatment liquid to substantially the center of the substrate and spreading the treatment liquid over the entire surface of the substrate before the first step. 6. A coating treatment method for forming a coating film on a substrate, wherein the coating liquid is discharged to approximately the center of the surface of the rotating substrate to spread the coating liquid over the entire surface of the substrate and is held by the holding means. And a step of forming a coating film by discharging a processing liquid having high wettability to the substrate at a predetermined position between the center and the periphery of the substrate. 7. The coating treatment method according to claim 6, further comprising a pretreatment step of discharging the treatment liquid to substantially the center of the substrate and spreading the treatment liquid over the entire surface of the substrate before the step. 8. A coating treatment apparatus for forming a coating film by spreading a coating liquid applied to the substrate on the entire surface of the substrate by rotating the substrate, and a holding means for holding the substrate substantially horizontally, A rotating unit that rotates the holding unit, a first coating liquid discharge nozzle that discharges the coating liquid to approximately the center of the substrate held by the holding unit, and a first coating liquid discharge nozzle that discharges the coating liquid onto the substrate. A second coating liquid discharge nozzle for discharging the coating liquid to a predetermined position between the center and the periphery of the substrate held by the holding means so that the thickness distribution of the coating film formed by the coating liquid becomes uniform; A coating treatment apparatus comprising: 9. The processing liquid discharge nozzle for discharging a processing liquid having high wettability to the substrate is further provided at the center of the substrate held by the holding means.
The coating treatment apparatus according to. 10. A coating treatment method for forming a coating film on a substrate, comprising: a first step of discharging a coating liquid substantially at the center of the surface of a substrate that is stopped or rotated; and rotating the substrate at a predetermined rotation speed. When the coating liquid is discharged onto the substrate, the coating liquid is further discharged onto a predetermined position between the center and the periphery of the substrate so that the thickness distribution of the coating film formed by spreading the coating liquid on the entire surface of the substrate becomes uniform. And a second step of: 11. The method according to claim 10, further comprising, before the first step, a pretreatment step of discharging a treatment liquid having high wettability with respect to the substrate to substantially the center of the substrate and spreading the treatment liquid over the entire surface of the substrate. The coating method described.