JP2003133223A - Exposure device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem wherein image face curvature, pattern slippage, distortion and defocus in a pattern face are worsened and pattern accuracy on a wafer is worsened due to self weight deflection of a reticle itself, face distortion and exposure thermal distortion when the reticle is clamped and a pattern on the reticle face is projected. SOLUTION: A means for detecting deformation distortion of the reticle face or the wafer face is provided, a correction optical means is provided between the reticle and a projection lens, a correction control amount of the correction optical means is determined by a signal of a reticle or wafer distortion detection means, and a distorted reticle pattern is corrected every shot, and every reticle exchange or wafer exchange by driving a correction optical element of the correction optical element.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a semiconductor chip such as IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head,
The present invention relates to an exposure apparatus used in a process of manufacturing a device having a fine pattern such as a micromachine, and more particularly to an exposure apparatus which improves a transfer accuracy by correcting a projection pattern or a transfer pattern due to deformation of an original plate or a substrate.

[0002]

2. Description of the Related Art FIGS. 8 and 9 show a conventional example of a projection exposure apparatus which is an exposure apparatus used in a semiconductor manufacturing process and projects and transfers a reticle pattern onto a silicon wafer. FIG. 9 shows a more detailed structure of a main part of the apparatus shown in FIG. In FIG. 8 and FIG. 9, 81 is a reticle that is an original plate of the exposure pattern, 82 is a reticle 81,
A reticle stage that scans and exposes the reticle with slit-shaped exposure light, and 83 is a reticle clamp that is a means for clamping the reticle 81 on the reticle stage 82.

A reticle 81 is a reticle stage 8
2 is a reticle alignment scope for aligning with the reticle alignment mark on the second reticle alignment mark 85.
A reduction projection lens for reducing and projecting the pattern on No. 1 onto a wafer 86 made of a silicon substrate, and 87 is a wafer on which the wafer 86 is mounted and which scan-exposes the slit exposure light in synchronization with the reticle stage 82. It's a stage. Reference numeral 88 denotes an off-axis alignment scope for detecting a plurality of alignment marks on the wafer 81 and measuring pattern overlay accuracy on the wafer.

In the above conventional structure, the reticle 8 is used.
1 to clamp the reticle clamp 83.
As shown in (1) and (2), the reticle clamp 83 has a reticle clamp pad 83A, and the reticle 81 is vacuum-clamped by using the reticle clamp pad 83A as a vacuum pad. When the reticle 81 is clamped or exposed using the reticle, as shown in FIG. 9 (3), the reticle itself has a self-weight deflection, surface distortion, and exposure thermal distortion, so that the reticle surface on the wafer is projected. There is a problem that the field curvature of the pattern, the lateral displacement of the pattern, the distortion, and the defocus in the pattern surface are deteriorated, and the pattern accuracy on the wafer is deteriorated.

[0005]

As shown in the above-mentioned conventional example, in the conventional exposure apparatus, when the reticle is clamped and the pattern on the reticle surface is projected onto the wafer, the reticle's own weight deflection and surface distortion. Further, due to the exposure heat distortion, there is a problem that the field curvature, the lateral displacement of the pattern, the distortion, and the in-plane defocus of the pattern deteriorate, and the pattern accuracy on the wafer deteriorates. Similarly, when the wafer is clamped, the wafer chuck flatness deteriorates and the wafer flatness deteriorates due to exposure heat distortion, and field curvature, pattern lateral deviation, distortion, and pattern in-plane defocusing deteriorate. There was a problem that pattern accuracy deteriorates.

An object of the present invention is to improve pattern accuracy when projecting and exposing a reticle pattern on this wafer. Specifically, it is an object to provide means for correcting pattern distortion due to deformation of a reticle (original plate) or a wafer (substrate).

[0007]

In order to solve the above problems, according to the present invention, means for detecting the deformation strain of the original (mask or reticle) surface or the substrate (semiconductor wafer) surface is provided. Correction optical means is provided between the projection lenses, the correction control amount of the correction optical means is determined by the signal of the original plate or substrate distortion detection means, and the corrected original pattern is corrected by driving the correction optical element of the correction optical means. Is characterized by.

For correction of the original pattern, for example, the original surface displacement or the substrate surface displacement immediately before exposure is detected by means for detecting the displacement of the original surface or the substrate surface, and the correction optical means is corrected based on the detection result. By controlling, the pattern distortion due to the displacement of the original surface or the displacement of the substrate surface is corrected every exposure. Alternatively, it may be performed every shot, each original replacement, or each substrate replacement.

In a preferred aspect of the present invention, preferably, a means for detecting the displacement of the correction optical means is further provided, and the correction optical means is correction-controlled by a detection signal of the detection means.
As a result, it is possible to perform more accurate and stable correction control.

As the correction optical means, one that optically corrects the projection pattern distortion or the transfer pattern distortion by displacing the correction optical element or the correction optical substrate can be used. For example, a parallel glass substrate and a displacement drive control means for the glass substrate may be used. The correction optical means may be provided with means for identifying the type or solid of the original plate and selectively correcting the optimum correction amount for each.

[0011]

EXAMPLES Examples of the present invention will be described below. [First Embodiment] FIG. 1 shows a schematic configuration of a step-and-scan type projection exposure apparatus (scanner) according to an embodiment of the present invention. 2 shows a more detailed structure of the reticle stage portion in the exposure apparatus of FIG.

In FIGS. 1 and 2, reference numeral 1 is a reticle, which is an original plate of an exposure pattern. 1A (FIG. 2) is an exposure slit for transmitting slit-shaped exposure light, and 2 is a reticle stage on which the reticle 1 is mounted and which scan-exposes the reticle 1 with respect to the slit-shaped exposure light. 2A (FIG. 2) is a reticle alignment reference mark provided on the reticle stage 2, 3 is a reticle clamp that is a means for clamping the reticle 1 on the reticle stage 2, 3A
(FIG. 2) is a reticle clamp pad arranged on the reticle clamp 3 for vacuum suction of the reticle 1, and 4 is a reticle alignment scope for aligning the reticle 1 with the reticle alignment reference mark 2A on the reticle stage 1. Reference numeral 5 denotes a reticle flatness detecting means which is provided in the pre-exposure movement position of the reticle 1 which is set in the vicinity of the exposure slit 1A above the reticle stage 2 and which measures the flatness of the reticle.

Reference numeral 6 denotes a reduction projection lens for reducing and projecting the pattern on the reticle 1 onto a wafer 7 made of a silicon substrate.
Reference numeral 8 denotes a wafer stage on which the wafer 7 is mounted and which scans and exposes the slit-shaped exposure light in synchronization with the reticle stage 2. Reference numeral 9 denotes a pattern on the wafer 7 for detecting a plurality of alignment marks on the wafer 7. An off-axis alignment scope that measures overlay accuracy.

Reference numeral 10 designates a reticle alignment reference mark 2A for the reticle 1 by a reticle alignment scope 4.
Mark detection means for detecting a mark detection signal when aligning with, an arithmetic processing circuit 11 for calculating an alignment mark alignment amount based on the mark detection signal of the mark detection means 10, and 12 an arithmetic processing circuit 11. The drive control means drives the reticle stage 2 according to the alignment mark alignment amount.

Reference numeral 13 is a reticle flatness detecting circuit for detecting the flatness of the reticle 1 based on the detection signal from the reticle flatness detecting means 5. Reference numeral 14 is a reticle bend (provided between the reticle 1 and the reduction projection lens 6). bend) A correction optical system. The reticle bend correction optical system 14 is composed of a parallel glass substrate, and is clamped and driven by the reticle bend correction optical system fine movement driving means 14A. Reference numeral 14B is a reticle bend correction optical system control circuit and fine movement driver, and 14C is a reticle bend correction optical system displacement detection circuit for detecting the displacement of the reticle bend correction optical system 14 by the correction optical system displacement sensor 15.

In the above structure, the reticle clamp 3 is provided with the reticle clamp pad 3A, and the reticle clamp 3 is obtained by vacuum suction of the reticle 1.
Clamp to. When clamping and exposing
The reticle 1, as shown in FIG. 3 (1) A, has its own weight deflection and exposure heat distortion (broken line → solid line), and FIG. 3 (2).
Exposure heat distortion deformation (dashed line → solid line) as shown in A, or deformation reticle, reticle clamp deformation, exposure heat distortion deformation, etc. as shown in FIG.

At this time, the flatness of the reticle 1 immediately before exposure is measured by the reticle flatness detecting means 5 shown in FIG.
The reticle flatness detection circuit 13 measures the reticle flatness. Next, the reticle bend correction optical system control circuit and fine movement drive driver 14B convert the signal from the reticle flatness detection circuit 13 into a correction control drive signal, and based on this correction control drive signal, the reticle bend correction optical system fine movement drive means. 14A correctively drives the reticle bend correction optical system 14 so as to cancel the pattern distortion.

Reticle bend correction optical system fine movement driving means 1
4 (A) and 3 (2) B show how the drive is corrected by 4A.
And (3) B. Here, in order to correct the deformed pattern image from the reticle 1, the reticle bend correction optical system fine movement drive means 14A displaces and drives the reticle bend correction optical system 14 as shown in FIG.
Correct the pattern distortion.

FIG. 4 shows an example of the structure of the reticle bend correction optical system fine movement driving means 14. In the example of FIG. 4A, a hinge 14E is provided below a clamp pad 14I that holds a reticle bend correction optical system (parallel glass substrate) 14, and a PZT (not shown) is provided in a notch 14J for forming the hinge 14E. Piezoelectric elements) 14D are provided symmetrically with the hinge 14E interposed therebetween, and the PZTs 14D are driven to expand and contract in the vertical direction, whereby the clamp pads 14I are tilt-driven and the reticle bend correction optical system 14 is displaced in the pattern correction direction.

Another example of the fine movement driving means 14A is shown in FIG.
As shown in (2), a notch 14J is provided on one side below the clamp pad 14I that holds the reticle bend correction optical system 14, and a PZT (piezoelectric element) 1 is provided at the notch.
4D is provided, and the reticle bend correction optical system 14 can be corrected and driven by driving the PZT 14D to expand and contract in the vertical direction. In still another example, as shown in FIG. 4C, the reticle bend correction optical system 14
A rotary bearing 14G is provided below the clamp pad 14I of the above, and as shown in the figure, below the center of rotation, a pressurizing spring 14H that pressurizes in the horizontal direction, and a PZT that drives in the opposite direction in the horizontal direction. (Piezoelectric element) 14F, PZ
The reticle bend correction optical system 14 can be correction driven by the expansion / contraction drive of T14F.

[Second Embodiment] As shown in FIGS. 5 (1) and 5 (2), as the reticle bend correction optical system fine movement driving means 14, in addition to the arrangement of the driving means shown in the first embodiment,
By arranging the driving means in the scanning direction or concentrically with the exposure slit 1A, it is possible to perform more accurate correction driving.

[Third Embodiment] As shown in FIG. 6, in addition to the modification of the quadratic curve approximation in the first embodiment, pattern offset correction is naturally applied to a simple primary inclination of the reticle 1. Direction, tilt correction drive is possible.

[Fourth Embodiment] As shown in FIG. 7, a wafer flatness detecting means 17 for detecting the flatness of the wafer 7 and a wafer flatness detecting circuit 16 are further provided. In response to the signal, the reticle bend correction optical system control circuit and fine movement drive driver 14B sends a drive signal to the reticle bend correction optical system fine movement drive means 14A in the direction for correcting the pattern distortion on the wafer 7, and the reticle bend correction optical system 14 is sent. May be configured to be corrected and driven. That is, it is also possible to drive the reticle bend correction optical system 14 so as to correct the distortion of the reticle 1 and the wafer 7. Of course, it is also possible to perform correction control based on the detection signal of either the reticle flatness or the wafer flatness.

As described above, according to the first to fourth embodiments, the exposure pattern distortion is corrected by the reticle bend correction optical system to correct the pattern lateral deviation and the distortion at the time of exposure, and the correction is accurate. A stable projected image of a mask pattern is obtained, and a pattern with high resolution can be exposed.

<Example of Semiconductor Production System> Next, an example of a production system of semiconductor devices (semiconductor chips such as IC and LSI, liquid crystal panels, CCDs, thin film magnetic heads, and micromachines) will be described. This is for maintenance services such as troubleshooting and regular maintenance of manufacturing equipment installed in semiconductor manufacturing plants, or software provision.
This is done using a computer network outside the manufacturing plant.

FIG. 10 shows the whole system cut out from a certain angle. In the figure, 101 is a business office of a vendor (apparatus supplier) that provides a semiconductor device manufacturing apparatus. As an example of a manufacturing apparatus, a semiconductor manufacturing apparatus for various processes used in a semiconductor manufacturing factory, for example,
Pre-process equipment (lithography equipment such as exposure equipment, resist processing equipment, etching equipment, heat treatment equipment, film forming equipment,
Flattening equipment, etc.) and post-process equipment (assembling equipment, inspection equipment, etc.) are assumed. In the business office 101, a host management system 10 that provides a maintenance database for manufacturing equipment is provided.
8. A plurality of operation terminal computers 110, and a local area network (LAN) 109 that connects these to construct an intranet. Host management system 10
Reference numeral 8 has a gateway for connecting the LAN 109 to the Internet 105, which is an external network of the office, and a security function for limiting access from the outside.

On the other hand, 102 to 104 are manufacturing factories of a semiconductor device maker as a user of the manufacturing apparatus. The manufacturing factories 102 to 104 may be factories belonging to different manufacturers or may be factories belonging to the same manufacturer (for example, a factory for pre-process, a factory for post-process, etc.). In each of the factories 102 to 104, a plurality of manufacturing apparatuses 106 and a local area network (LAN) 111 that connects them and constructs an intranet.
And a host management system 107 as a monitoring device for monitoring the operating status of each manufacturing device 106. Host management system 1 provided in each factory 102-104
07 includes a gateway for connecting the LAN 111 in each factory to the Internet 105, which is an external network of the factory. As a result, the host management system 108 on the vendor 101 side can be accessed from the LAN 111 of each factory via the Internet 105, and only the limited user is permitted to access by the security function of the host management system 108. Specifically, each manufacturing device 106 is connected via the Internet 105.
In addition to notifying the vendor of the status information indicating the operating status of the device (for example, the symptom of the manufacturing device in which the trouble has occurred) from the factory side, the response information corresponding to the notification (for example, the information for instructing the troubleshooting method, the countermeasure Software and data), the latest software, and maintenance information such as help information can be received from the vendor side. A communication protocol (TCP / IP) generally used on the Internet is used for data communication between the factories 102 to 104 and the vendor 101 and data communication on the LAN 111 in each factory. In addition, instead of using the Internet as an external network outside the factory,
It is also possible to use a high-security leased line network (such as ISDN) without access from a third party. Further, the host management system is not limited to one provided by a vendor, and a user may construct a database and place it on an external network to permit access from a plurality of factories of the user to the database.

FIG. 11 is a conceptual diagram showing the entire system of this embodiment cut out from an angle different from that shown in FIG. In the above example, a plurality of user factories each equipped with a manufacturing apparatus and a management system of a vendor of the manufacturing apparatus are connected by an external network, and production management of each factory or at least one unit is performed via the external network. The information of the manufacturing apparatus was data-communicated. On the other hand, in this example, a factory equipped with manufacturing equipment of a plurality of vendors and a management system of each vendor of the plurality of manufacturing equipments are connected by an external network outside the factory, and maintenance information of each manufacturing equipment is displayed. It is for data communication. In the figure, reference numeral 201 denotes a manufacturing factory of a manufacturing apparatus user (semiconductor device maker), and a manufacturing apparatus for performing various processes is installed on the manufacturing line of the factory. Has been introduced. Although only one manufacturing factory 201 is shown in FIG. 11, a plurality of factories are actually networked in the same manner. Each device in the factory is connected by LAN 206 to form an intranet,
The host management system 205 manages the operation of the manufacturing line. On the other hand, each business office of a vendor (apparatus supply maker) such as an exposure apparatus maker 210, a resist processing apparatus maker 220, a film forming apparatus maker 230, etc., has a host management system 21 for performing remote maintenance of the supplied apparatus.
1, 221, 231 which, as mentioned above, comprise the maintenance database and the gateway of the external network. A host management system 205 that manages each device in the user's manufacturing plant, and a vendor management system 2 for each device
11, 221, and 231 are connected by the external network 200 such as the Internet or a dedicated line network. In this system, when trouble occurs in any of the series of production equipment on the production line,
Although the operation of the manufacturing line is suspended, it is possible to quickly respond by receiving remote maintenance via the Internet 200 from the vendor of the device in which the trouble has occurred, and the suspension of the manufacturing line can be minimized.

Each manufacturing apparatus installed in the semiconductor manufacturing factory is provided with a display, a network interface, and a computer that executes network access software and apparatus operating software stored in a storage device. The storage device is a built-in memory, a hard disk, or a network file server. The network access software includes a dedicated or general-purpose web browser,
For example, a user interface having a screen as shown in FIG. 12 is provided on the display. The operator who manages the manufacturing apparatus at each factory refers to the screen, and the manufacturing apparatus model (401), serial number (402), trouble subject (403), date of occurrence (404), urgency (4)
05), symptom (406), coping method (407), progress (4)
08) etc. is input to the input items on the screen. The input information is transmitted to the maintenance database via the Internet, and the appropriate maintenance information as a result is returned from the maintenance database and presented on the display. Further, the user interface provided by the web browser further realizes a hyperlink function (410 to 412) as shown in the figure, and the operator can access more detailed information of each item or use the software library provided by the vendor for the manufacturing apparatus. You can pull out the latest version of the software, or pull out the operation guide (help information) for reference by the factory operator.

Next, a semiconductor device manufacturing process using the above-described production system will be described. FIG. 13 shows a flow of the whole manufacturing process of the semiconductor device.
In step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (mask manufacturing), a mask having the designed circuit pattern is manufactured. On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by the lithography technique using the mask and the wafer prepared above.
The next step 5 (assembly) is called a post-process, which is a process of forming a semiconductor chip using the wafer manufactured in step 4, and includes an assembly process (dicing, bonding), a packaging process (chip encapsulation), and the like. Including steps. In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. A semiconductor device is completed through these processes and shipped (step 7). The front-end process and the back-end process are performed in separate dedicated factories, and maintenance is performed for each of these factories by the remote maintenance system described above. Information for production management and device maintenance is also data-communicated between the front-end factory and the back-end factory via the Internet or the leased line network.

FIG. 14 shows a detailed flow of the wafer process. In step 11 (oxidation), the surface of the wafer is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted in the wafer. Step 1
In 5 (resist processing), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern of the mask is printed and exposed on the wafer by the exposure apparatus described above. In step 17 (development), the exposed wafer is developed. In step 18 (etching), parts other than the developed resist image are removed. In step 19 (resist stripping), the resist that is no longer needed after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer. Since the manufacturing equipment used in each process is maintained by the remote maintenance system described above, troubles can be prevented in advance, and even if troubles occur, quick recovery is possible, and Productivity can be improved.

[0032]

As described above, according to the present invention,
A means for detecting the displacement (distortion or inclination) of the original plate or the substrate, and a correction optical means for engineeringly correcting the distortion of the projection pattern or the transfer pattern due to the deformation of the original surface or the substrate surface based on the detection result. Since it is provided, it is possible to improve pattern accuracy and resolution when exposing the pattern of the original plate on the substrate, and their stability.

[Brief description of drawings]

FIG. 1 is a conceptual diagram showing a configuration of a projection exposure apparatus according to an embodiment of the present invention.

2 is a more detailed configuration diagram of a reticle stage portion in the apparatus of FIG.

3A and 3B are diagrams illustrating various modifications of a reticle and a correction method thereof in the apparatus of FIG.

4 is a diagram showing a configuration of a correction optical system fine movement driving means in the apparatus of FIG.

5 is a diagram showing another configuration example of the correction optical system fine movement drive means in the apparatus of FIG.

6A and 6B are diagrams illustrating another modified state example of the reticle and the correction method thereof in the apparatus of FIG.

FIG. 7 is a conceptual diagram showing a configuration of a projection exposure apparatus according to a fourth embodiment of the present invention.

FIG. 8 is a conceptual diagram showing a configuration of a conventional projection exposure apparatus.

9 is a more detailed configuration diagram of a reticle stage portion in the apparatus of FIG.

FIG. 10 is a conceptual view of the semiconductor device production system viewed from an angle.

FIG. 11 is a conceptual view of the semiconductor device production system viewed from another angle.

FIG. 12 is a specific example of a user interface.

FIG. 13 is a diagram illustrating a flow of a device manufacturing process.

FIG. 14 is a diagram illustrating a wafer process.

[Explanation of symbols]

1: reticle, 1A: exposure slit (or slit exposure light), 2: reticle stage, 2A: reticle alignment reference mark, 3: reticle clamp, 3A: reticle clamp pad, 4: reticle alignment scope, 5: reticle flatness detection Means, 6: reduction projection lens, 7: wafer, 8: wafer stage, 9: off-axis alignment scope, 10: mark detection means, 1
1: arithmetic processing circuit 12: drive control means, 12: reticle flatness detection circuit, 14: reticle bend correction optical system, 1
4A: reticle bend correction optical system fine movement driving means, 14
B: reticle bend correction optical system control circuit and fine movement drive driver, 14C: reticle bend correction optical system displacement detection means, 14D: PZT (piezoelectric element), 14E: hinge,
14F: PZT (piezoelectric element), 14G: rotary bearing, 1
4H: pressurizing spring, 14I: reticle bend correction optical system clamp pad, 14J: notch, 15: correction optical system displacement sensor, 16: wafer flatness detecting means, 17: wafer flatness detecting circuit, 81: reticle, 82: Reticle stage: 82A: Reticle alignment reference mark, 8
3: reticle clamp, 83A: reticle clamp pad, 84: reticle alignment scope, 85: reduction projection lens, 86: wafer, 87: wafer stage, 8
8: Off-axis alignment scope.

Claims (14)

[Claims] 1. A projection exposure apparatus for projecting and transferring a pattern drawn on an original plate onto a substrate via a projection optical system, a means for detecting a displacement of at least one of the original plate and the substrate surface, and the original plate. And a correction optical unit which is disposed between the substrate and the substrate and optically corrects the projection pattern distortion or the transfer pattern distortion due to the deformation of the original plate surface or the substrate surface based on the output of the detection unit. An exposure apparatus characterized by the above. 2. The exposure apparatus according to claim 1, further comprising means for detecting the displacement of the correction optical means, and correcting and controlling the correction optical means according to a detection signal of the detection means. 3. The correction optical means optically corrects the projection pattern distortion or the transfer pattern distortion by displacing a correction optical element or a correction optical substrate. The exposure apparatus according to. 4. The displacement of the original surface or the substrate surface immediately before exposure is detected by the means for detecting the displacement of the original surface or the substrate surface, and correction control of the correction optical means is performed based on the detection result. 4. The device according to claim 1, further comprising means for correcting pattern distortion due to the displacement of the original plate surface or the displacement of the substrate surface for each exposure.
Exposure apparatus. 5. The exposure apparatus according to claim 1, wherein the correction optical means comprises a parallel glass substrate and a displacement drive control means for the glass substrate. 6. The correction optical means has means for identifying the type or solid of the original plate and selectively correcting an optimum correction amount for each of them, according to any one of claims 1 to 5. The exposure apparatus described. 7. The exposure apparatus according to claim 1, wherein the correction control by the correction optical means is performed every original plate exchange, substrate exchange, or exposure shot. 8. The exposure apparatus according to claim 1, further comprising a display, a network interface, and a computer that executes network software, and the exposure apparatus maintenance information is stored in a computer network. An exposure apparatus that enables data communication via the. 9. The network software provides a user interface on the display for connecting to an external network of a factory in which the exposure apparatus is installed and accessing a maintenance database provided by a vendor or a user of the exposure apparatus. 9. The device according to claim 8, which makes it possible to obtain information from the database via the external network. 10. A step of installing a manufacturing apparatus group for various processes including the exposure apparatus according to claim 1 in a semiconductor manufacturing factory, and a plurality of processes using the manufacturing apparatus group. And a step of manufacturing a semiconductor device. 11. A step of connecting the manufacturing apparatus group with a local area network, and data communication of information relating to at least one of the manufacturing apparatus group between the local area network and an external network outside the semiconductor manufacturing factory. The method according to claim 10, further comprising: 12. A semiconductor manufacturing factory, which is different from the semiconductor manufacturing factory, accessing a database provided by a vendor or a user of the exposure apparatus via the external network to obtain maintenance information of the manufacturing apparatus by data communication. 12. The method according to claim 11, wherein data is communicated with the device via the external network for production control. 13. A manufacturing apparatus group for various processes including the exposure apparatus according to claim 1, a local area network connecting the manufacturing apparatus group, and a local area network to outside the factory. A semiconductor manufacturing factory having a gateway that enables access to the external network, and capable of performing data communication of information regarding at least one of the manufacturing apparatus groups. 14. The method according to claim 1, which is installed in a semiconductor manufacturing factory.
10. The exposure apparatus maintenance method according to any one of claims 1 to 9, wherein a vendor or a user of the exposure apparatus provides a maintenance database connected to an external network of the semiconductor manufacturing factory, and the semiconductor manufacturing factory. A step of permitting access to the maintenance database from the inside via the external network; and a step of transmitting the maintenance information accumulated in the maintenance database to the semiconductor manufacturing factory side via the external network. Maintenance method for exposure equipment.