JP2003101097A - Magnetic detection element and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a CPP magnetic detection element which secure electrical insulation of both end surfaces of a multilayer film, having magnetoresistive effect. SOLUTION: The multilayer film T1 is formed in a through-hole H bored in an insulating material layer 29. Once the multilayer film T1 is formed in the through-hole H bored in the insulating material layer 29, the center part C of the multilayer film T1 having a magnetic field detection function is protected by the insulating material layer 29, and even if side end parts S and S are ground by milling to prevent a free magnetic layer 27 and a fixed magnetic layer 25 from short-circuiting, influence on the magnetic field detection function can be eliminated.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to CPP (current
TECHNICAL FIELD The present invention relates to a perpendicular to the plane) type magnetic detecting element, and more particularly to a magnetic detecting element capable of preventing a short circuit between thin film layers constituting the magnetic detecting element and improving quality, and a manufacturing method thereof.

[0002]

16 and 17 are views showing a method of manufacturing a conventional magnetic detecting element, and FIG. 18 is a cross-sectional view of the conventional magnetic detecting element as seen from a surface facing a recording medium.

First, a lower shield layer 1 made of NiFe or the like and a lower electrode layer 2 made of Cu or the like are formed on a substrate (not shown). Further, on the lower electrode layer 2, the first
Free magnetic layer 3 including free magnetic layer 3a, non-magnetic intermediate layer 3b, and second free magnetic layer 3c, non-magnetic material layer 4, second
Pinned magnetic layer 5a, non-magnetic intermediate layer 5b, first pinned magnetic layer 5
The fixed magnetic layer 5 made of c and the antiferromagnetic layer 6 are sequentially laminated.

The first free magnetic layer 3a, the second free magnetic layer 3c, the second pinned magnetic layer 5a, and the first pinned magnetic layer 5c are N
It is formed of iFe or the like. The nonmagnetic material layer 4 is made of Cu.
And the nonmagnetic intermediate layers 3b and 5b are made of Ru or the like.

The free magnetic layer 3 to the antiferromagnetic layer 6 form a multilayer film T. Further, FIG. 16 shows a state in which a lift-off resist layer R is formed on the multilayer film T.

Next, FIG. 17 shows a state in which the multilayer film T not covered with the resist layer R is removed by ion milling.

Further, hard bias layers 8 made of a hard magnetic material such as CoPt are formed on the lower electrode layer 2 on both sides of the multilayer film T left unetched by the ion milling, with the insulating layers 7 and 7 interposed therebetween. 8 is laminated, the insulating layers 9 and 9 are laminated on the hard bias layers 8 and 8, and then the resist layer R is removed.

After removing the resist layer R, when the upper electrode layer 10 and the upper shield layer 11 made of NiFe or the like are laminated with Cu or the like, the magnetic sensing element shown in FIG. 18 is formed. This magnetic detection element has an antiferromagnetic layer 6
Is a so-called top-spin type spin-valve type magnetic sensing element located above the free magnetic layer 3.

The magnetic sensing element shown in FIG. 18 is a so-called CPP (current perpendicular to the plane) type magnetic sensing element in which a sense current is passed in a direction perpendicular to each film surface of the multilayer film T.

In the state before the magnetic field to be detected (external magnetic field) is applied to the magnetic detection element, the magnetization direction of the fixed magnetic layer 5 and the magnetization direction of the free magnetic layer 3 form a predetermined angle. When an external magnetic field is applied to the magnetic detection element in this state, the magnetization direction of the free magnetic layer 3 rotates, and the relative angle between the magnetization direction of the fixed magnetic layer 5 and the magnetization direction of the free magnetic layer 3 changes, and The DC resistance value and output voltage of the detection element change.

The CPP type magnetic detecting element is a CIP in which a sense current is flowed in a direction substantially horizontal to each film surface of the multilayer film T.
Compared with a (current in the plane) type magnetic detecting element, the amount of resistance change ΔR and the output Δ when the area of each film surface of the multilayer film T is reduced with the amount of heat generation (P) kept constant.
V can be increased.

That is, as the element size is made smaller, the output can be made larger in the CPP type than in the CIP type, and the CPP type appropriately responds to the narrowing of the element size accompanying the future increase in recording density. It is expected to be a structure that can.

[0013]

However, the conventional CPP type magnetic sensing element shown in FIG. 18 formed by the manufacturing method shown in FIGS. 16 and 17 has the following problems. .

When the region of the multilayer film T not covered with the resist layer R is shaved by ion milling, the material of each layer of the multilayer film T adheres to the side end surface of the multilayer film T left uncut, in the track width direction. 17 and the reattachment layers L and L as shown in FIG.

Since the free magnetic layer 3, the non-magnetic material layer 4, the pinned magnetic layer 5 and the antiferromagnetic layer 6 forming the multilayer film T are made of a conductive material, the side of the multilayer film T in the track width direction. When the redeposited material layers L, L are attached to the end faces, in the magnetic detection element shown in FIG. 18, when a direct current is passed from the upper electrode layer 10 to the lower electrode layer 2, each layer of the multilayer film T is electrically connected. It will short circuit.

In particular, in the case of the CPP type magnetic sensing element in which the sense current is passed in the direction perpendicular to each film surface of the multilayer film T, when the free magnetic layer 3 and the pinned magnetic layer 5 are short-circuited, an external magnetic field is applied. Even if the magnetization direction of the free magnetic layer 3 changes, the resistance does not change and the magnetic detection element does not function.

Before the insulating layers 7 and 7, the hard bias layers 8 and 8 and the insulating layers 9 and 9 are stacked on both side regions of the multilayer film T, the incident angle from the normal direction to the upper surface of the multilayer film T is set. When large ion milling is performed to remove and remove the reattachment layers L, L, the vicinity of the side end surface of the multilayer film T is damaged and the magnetic field detection capability of the magnetic detection element is reduced.

The present invention is intended to solve the above-mentioned conventional problems, and it is possible to obtain electrical insulation between the layers constituting the multilayer film of the magnetic detection element and to improve the quality of the magnetic detection. An object is to provide an element and a manufacturing method thereof.

[0019]

The present invention provides a magnetoresistive effect element, an upper electrode layer electrically connected to the upper surface of the magnetoresistive effect element and a lower surface of the magnetoresistive effect element. And a lower electrode layer for supplying a current in a direction perpendicular to the film surface of the magnetoresistive effect element, wherein the magnetoresistive effect element is formed inside a through hole vertically penetrating an insulating material layer. It is characterized by that.

According to the present invention, the magnetoresistive effect element whose electric resistance changes when an external magnetic field (signal magnetic field) is applied,
Since it is formed inside the through hole provided in the insulating material layer,
The magnetoresistive effect element is protected by the insulating material layer.

Therefore, when the magnetoresistive effect element is carved and formed by ion milling or the like, it is possible to prevent the portion of the magnetoresistive effect element having the magnetic field detecting ability from being damaged.

The insulating material layer is preferably formed of a material that is ground by reactive ion milling.

Material cut by reactive ion milling
The material is, for example, SiO₂, Ta₂O _FiveIs.

When the insulating material layer is formed of a material which is ground by reactive ion milling, it becomes easy to make the side surface of the through hole perpendicular to the upper surface of the insulating material layer, and the magnetoresistive effect is obtained. This is preferable because the track width dimension of the device can be accurately defined. However,
The side surface of the through hole may be an inclined surface with respect to the upper surface of the insulating material layer.

In the magnetic detection element of the present invention, the side end portion of the magnetoresistive effect element may be laminated on the upper surface of the insulating material layer. In this case, the side end portion of the magnetoresistive effect element laminated on the upper surface of the insulating material layer has a lower magnetoresistive effect than the central portion of the magnetoresistive effect element located inside the through hole. Is preferred.

When the side end portion of the magnetoresistive effect element is laminated on the upper surface of the insulating material layer, the magnetoresistive effect element is formed from the inside of the through hole to the upper surface of the insulating material layer, and the through hole is formed. Bend over the edge of the upper opening of the hole. The rate of change in magnetoresistance of the magnetoresistive element decreases at the bent portion (bent portion).

Therefore, when an electric current is passed through the central portion of the magnetoresistive effect element located inside the through hole, only the magnetoresistive change inside the through hole is mainly detected, and the side end portion of the magnetoresistive effect element is detected. The magnetoresistive effect of is lower than that of the central portion.

It is also possible to intentionally reduce the magnetoresistive effect by implanting milling particles at the side end portions of the magnetoresistive effect element.

In the present invention, the magnetoresistive effect element can be formed as a so-called spin valve type magnetoresistive effect element composed of a multilayer film having a fixed magnetic layer, a nonmagnetic material layer and a free magnetic layer.

In the spin valve type magnetoresistive effect element, when the free magnetic layer and the pinned magnetic layer are short-circuited,
Even if an external magnetic field is applied and the magnetization direction of the free magnetic layer changes, the resistance change does not occur and the magnetic detection element does not function.

In the conventional magnetic sensing element, as described above, there is a high probability that the free magnetic layer and the fixed magnetic layer are short-circuited due to redeposition of the metal material in the manufacturing process.

However, in the present invention, the multilayer film is formed inside the through hole provided in the insulating material layer, and the multilayer film is protected by the insulating material layer. Therefore, it is possible to prevent an electrical short circuit between the free magnetic layer and the pinned magnetic layer.

In particular, when the side end portions of the multilayer film are laminated on the upper surface of the insulating material layer, the metal material may redeposit on the side end faces of the free magnetic layer and the pinned magnetic layer. However, it may be preferable that the side end portion of the multilayer film laminated on the upper surface of the insulating material layer is not involved in the magnetic field detection ability. It is preferable to grind by a milling with a large incident angle with respect to the (normal direction to the substrate surface). By this milling process, the metal material redeposited on the side end surfaces of the free magnetic layer and the pinned magnetic layer can be removed, and an electrical short circuit between the free magnetic layer and the pinned magnetic layer can be eliminated.

The multilayer film has, for example, an antiferromagnetic layer in contact with the pinned magnetic layer, and the antiferromagnetic layer, the pinned magnetic layer, the nonmagnetic material layer, and the free magnetic layer are stacked in this order from the bottom. It is formed as a so-called bottom type spin valve type magnetoresistive effect element.

Alternatively, the multilayer film has an antiferromagnetic layer in contact with the pinned magnetic layer, and a free magnetic layer, a nonmagnetic material layer, a pinned magnetic layer and an antiferromagnetic layer are stacked in this order from the bottom. It is formed as a so-called top type spin valve type magnetoresistive effect element.

In the present invention, a pair of vertical bias layers made of a hard magnetic material are provided so as to face at least the side end faces of the free magnetic layer in the track width direction of the multilayer film, whereby the free magnetic layer is longitudinally aligned. A bias magnetic field can be applied.

Alternatively, a longitudinal bias magnetic field can be applied to the free magnetic layer by providing a pair of longitudinal bias layers made of an antiferromagnetic material or a ferromagnetic material on the free magnetic layer of the multilayer film. it can.

Alternatively, a longitudinal bias layer made of a hard magnetic material is provided on the surface side of the free magnetic layer of the multilayer film opposite to the surface in contact with the nonmagnetic material layer, with a separation layer made of a nonmagnetic material interposed therebetween. As a result, a longitudinal bias magnetic field can be applied to the free magnetic layer.

The insulating material layer preferably has a specular reflection effect. Here, the specular reflection effect by using the specular film (specular reflection film) is shown in FIG.
Will be described with reference to. FIG. 6 schematically shows a part of the structure of the magnetic detection element according to the present invention.

The up-spin electrons (indicated by an upward arrow in the figure) pass through the pinned magnetic layer and the non-magnetic material layer in the state where the magnetization of the pinned magnetic layer and the magnetization of the free magnetic layer are parallel to each other, and It can move inside the free magnetic layer.

Here, when the track width Tw is further narrowed and especially the element area becomes 60 nm square or less, a part of the up-spin electrons is transferred to the side end surface of the multilayer film before passing through the inside of the free magnetic layer. It becomes easy to collide, but when a specular film is provided on the side end surface of the multilayer film, the up-spin electrons that reach the side end surface of the multilayer film are specularly reflected while holding the spin state (energy, quantum state, etc.) there. To do. Then, the conduction electrons of the up-spin electrons that are specularly reflected can change their moving directions and pass through the inside of the free magnetic layer.

Therefore, even when the device area is narrowed, the mean free path λ ^{+ of the} conduction electrons having the up-spin electrons is
Can be extended as compared with the conventional one, so that the mean free path λ ^{+ of the} conduction electrons having the up-spin electrons,
It is possible to increase the difference from the mean free path λ ⁻ of conduction electrons having down-spin electrons, so that it is possible to improve the reproduction output and the resistance change rate (ΔR / R).

The reason why the conduction electrons are specularly reflected by the formation of the specular film is that a potential barrier is formed in the vicinity of the interface between the side wall of the free magnetic layer, the nonmagnetic material layer, the fixed magnetic layer and the specular film. it is conceivable that.

In particular, when the track width of the magnetic detection element is reduced, the number of times that the conduction electrons having the up-spin electrons reach the side end surface of the multilayer film is increased, and the specular reflection effect of the specular film is effectively operated. Therefore, the rate of change in resistance can be improved.

In the present invention, a lower shield layer may be formed under the lower electrode layer and an upper shield layer may be formed over the upper electrode layer. Alternatively, the lower electrode layer and the upper electrode layer may be formed of a magnetic material, and the lower electrode layer and the upper electrode layer may have the functions of the lower shield layer and the upper shield layer, respectively.

The method for manufacturing a magnetic sensing element of the present invention is characterized by including the following steps. (A) a step of forming a lower electrode layer on a substrate and laminating an insulating material layer on the lower electrode layer; and (b) forming a through hole vertically penetrating the insulating material layer, and forming the through hole. A step of exposing the surface of the lower electrode layer inside, and (c) a pinned magnetic layer on the lower electrode layer in the through hole,
Forming a multilayer film having a non-magnetic material layer and a free magnetic layer; and (d) forming a resist layer on the multilayer film and removing the multilayer film not covered by the resist layer, e) a step of removing the resist layer, and (f)
Forming an upper electrode layer electrically connected to an upper surface of the multilayer film.

In the present invention, in the step (c),
Since the multilayer film is formed inside the through hole provided in the insulating material layer, the multilayer film is protected by the insulating material layer.

Therefore, in the step (d), when the multilayer film which is not covered with the resist layer is removed by ion milling or the like, the multilayer film located inside the through hole and having magnetic field detection capability is formed. The central part can be prevented from being damaged.

In the step (b), it is preferable that the side surface of the through hole is a vertical surface to the upper surface of the insulating material layer because the track width dimension of the magnetoresistive effect element can be accurately defined. However, the side surface of the through hole may be an inclined surface with respect to the upper surface of the insulating material layer.

In the step (b), if the through hole is formed by reactive ion milling, it becomes easy to make the side surface of the through hole perpendicular to the upper surface of the insulating material layer. preferable.

Therefore, in the step (a), it is preferable that the insulating material layer is formed of a material that is ground by reactive ion milling. The material scraped by the reactive ion milling is, for example, SiO ₂ ,
It is Ta ₂ O ₅ .

Further, in the present invention, in the step (d), the insulation is performed so that the upper surface of the portion of the insulating material layer not covered with the resist layer is located below the upper surface of the free magnetic layer. Scrap the material layer, then (g)
A step of providing a pair of longitudinal bias layers which are made of a hard magnetic material and which apply a magnetic field in the track width direction to the free magnetic layer facing at least the side end surface of the free magnetic layer in the track width direction of the multilayer film. be able to.

Between the steps (d) and (g), (h) a step of removing the outer surface of the insulating material layer left unremoved in the step (d) is performed. You may have.

In the step (c), the multilayer film is formed from the inside of the through hole to the upper surface of the insulating material layer so that the side end portion of the multilayer film is laminated on the upper surface of the insulating material layer. It may be formed over. In this case, it is preferable that a side end portion of the multilayer film laminated on the upper surface of the insulating material layer has a lower magnetoresistive effect than a central portion of the multilayer film located inside the through hole.

When the side end portion of the multilayer film is laminated on the upper surface of the insulating material layer, the multilayer film is formed from the inside of the through hole to the upper surface of the insulating material layer, and the upper opening of the through hole is formed. Bend over the edge of the part. The rate of change in magnetoresistance of the multilayer film decreases at the bent portion (bent portion).

Therefore, when an electric current is passed through the central portion of the multilayer film located inside the through hole, only the magnetoresistive change inside the through hole is detected, and the magnetoresistive effect of the side end portion of the multilayer film is detected. Is lower than the central portion.

In addition, between the steps (d) and (e), (i) the multilayer film left on the upper surface of the insulating material layer without being removed in the step (d) is formed. It is preferable to remove the side end portion of the multilayer film by including a step of removing the side end surface in the track width direction by milling.

Further, in the step (i), the magnetoresistive effect can be intentionally lowered by implanting milling particles at the side end portions of the multilayer film.

In the step (h) or (i), the distance from the center position of the through hole in the track width direction to the side end faces on both sides of the multilayer film and / or the track width direction of the through hole. The multilayer film can have a bilaterally symmetrical structure by cutting the side end faces of the multilayer film and / or the external faces of the insulating material layer so that the distances from the center position to the outside faces on both sides of the insulating material layer are equal. .

In particular, in the step (h), the distance from the center position in the track width direction of the through hole to the outer side surfaces on both sides of the insulating material layer is made equal to form the step (g). Bias magnetic fields from the pair of vertical bias layers can be equalized on the left and right end surfaces in the track width direction of the free magnetic layer.

In the step (d), if the resist layer is formed on the multilayer film so that the center position in the track width direction of the through hole and the center position in the track width direction of the resist layer overlap with each other, The distance from the center position in the track width direction of the through hole to the side end faces on both sides of the multilayer film,
And / or the distance from the center position in the track width direction of the through hole to the outer surfaces on both sides of the insulating material layer becomes equal at the end of the step (d), which is more preferable.

In the present invention, in the step (c),
The multilayer film may be formed to have an antiferromagnetic layer in contact with the pinned magnetic layer, and an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic material layer, and a free magnetic layer may be stacked in this order from the bottom. Forming the multilayer film as an antiferromagnetic layer in contact with the fixed magnetic layer, and laminating a free magnetic layer, a nonmagnetic material layer, a fixed magnetic layer and an antiferromagnetic layer in this order from the bottom. You may.

In the present invention, in the step (a),
A lower shield layer may be formed below the lower electrode layer, and an upper shield layer may be formed above the upper electrode layer after the step (f).

Alternatively, by forming the lower electrode layer in the step (a) and the upper electrode layer in the step (f) by a magnetic material, respectively,
The lower electrode layer and the upper electrode layer may have the functions of a lower shield layer and an upper shield layer, respectively.

[0065]

FIG. 1 is a partial cross-sectional view of a magnetic detection element according to a first embodiment of the present invention as seen from the side facing a recording medium.

The magnetic detecting element shown in FIG. 1 is an MR head for reproducing a recording signal recorded on a recording medium.
The surface facing the recording medium is, for example, perpendicular to the film surface of the thin film forming the magnetic detection element and parallel to the magnetization direction when the external magnetic field (recording signal magnetic field) of the free magnetic layer of the magnetic detection element is not applied. It is a plane. In FIG. 1, the surface facing the recording medium is a plane parallel to the XZ plane.

When the magnetic detecting element is used in a floating magnetic head, the surface facing the recording medium is the so-called ABS surface.

The magnetic detecting element is formed on the trailing end surface of the slider made of, for example, alumina-titanium carbide (Al ₂ O ₃ -TiC). The slider is
The magnetic head device is constructed by joining the elastically deformable support member made of stainless steel or the like on the side opposite to the surface facing the recording medium.

The track width direction is the width direction of the region in which the magnetization direction is changed by the external magnetic field. For example, the magnetization direction when the external magnetic field of the free magnetic layer is not applied, that is, the X direction in the figure. Is. The width dimension of the free magnetic layer in the track width direction defines the track width Tw of the magnetic detection element.

The recording medium faces the surface of the magnetic detection element facing the recording medium, and moves in the Z direction in the figure. The direction of the leakage magnetic field from this recording medium is the Y direction in the figure.

The magnetic sensing element shown in FIG.
2, seed layer 23, antiferromagnetic layer 24, first pinned magnetic layer 2
5a, a non-magnetic intermediate layer 25b, and a second pinned magnetic layer 25c, which is a synthetic ferripinned pinned magnetic layer 25,
A synthetic ferri-free type free magnetic layer 27 including a nonmagnetic material layer 26, a second free magnetic layer 27a, a nonmagnetic intermediate layer 27b, and a first free magnetic layer 27c, and a protective layer 28.
The multilayer film T1 composed of is a bottom spin valve type magnetoresistive effect element.

A substrate (not shown) is provided below the multilayer film T1.
A lower shield layer 20 and a lower electrode layer 21 are formed on the upper surface of the lower shield layer 20 via an underlying layer (not shown) made of an insulating material such as alumina.
The upper electrode layer 33 and the upper shield layer 34 are formed on the upper layer of the multilayer film T1.

The lower electrode layer 21 is electrically connected to the lower surface of the multilayer film T1, and the upper electrode layer 33 is electrically connected to the upper surface of the multilayer film T1.

An insulating material layer 29 is laminated on the lower electrode layer 21, and the multilayer film T1 has an insulating material layer 29 from the inside of a through hole H penetrating the insulating material layer 29 in the vertical direction (Z direction).
Is formed over the upper surface 29a1. The side surface Ha of the through hole H (the surface of the insulating material layer 29 facing the through hole H) is a vertical surface with respect to the upper surface 29a1 of the insulating material layer 29.

The insulating material layer 29 is made of a material scraped by reactive ion milling, specifically, SiO ₂ ,
It is formed of Ta ₂ O ₅ . The insulating material layer 29,
When the through hole H is formed by scraping by reactive ion milling, the side surface Ha of the through hole H becomes the upper surface 29 of the insulating material layer 29.
It becomes easy to form a plane perpendicular to a1 and the multilayer film T
This is preferable because the track width dimension Tw of 1 can be accurately defined. The film thickness of the insulating material layer 29 is, for example, 500 Å
Is.

The track width dimension Tw of the multilayer film T1 is the width dimension in the track width direction of the central portion C of the multilayer film T1 located inside the through hole H and having the magnetic field detection capability.

On the upper surface 29a2 of the insulating material layer 29 where the multilayer film T1 is not laminated, the bias base layer 3 is formed.
Hard bias layers 31 and 31 are laminated via 0 and 30. Insulating layers 32, 32 are laminated on the hard bias layers 31, 31. By the insulating layers 32, 32, the upper electrode layer 33 and the side end surface T1 of the multilayer film T1 are formed.
s, T1s and the hard bias layers 31, 31 are insulated.

In the present embodiment, the thickness t1 of the insulating material layer 29 between the side end surface 31a of the hard bias layer 31 and the side surface Ha of the through hole H is set to the free magnetic layer 27 by the hard bias layers 31, 31. Is a thickness such that a sufficient bias magnetic field is applied, for example, 10 nm.

By adjusting the thickness t1 appropriately, the magnitude of the longitudinal bias magnetic field received by the free magnetic layer 27 from the hard bias layers 31 and 31 can be adjusted.

The magnetic sensing element shown in FIG. 1 is a so-called spin-valve type magnetic sensing element, in which the magnetization direction of the pinned magnetic layer 25 is properly pinned in the direction parallel to the Y direction in the drawing, and the free magnetic layer is used. The magnetization of 27 is properly aligned in the X direction in the figure, and the fixed magnetic layer 25 and the free magnetic layer 27 are
The magnetizations of are crossed. The leakage magnetic field from the recording medium penetrates in the Y direction of the magnetic detection element in the drawing, the magnetization of the free magnetic layer 27 fluctuates with high sensitivity, and the fluctuation of this magnetization direction and the fixed magnetization direction of the pinned magnetic layer 25 cause an electrical change. The resistance changes, and the leakage magnetic field (recording signal magnetic field) from the recording medium is detected by the voltage change based on the change in the electric resistance value.

However, it is the relative angle between the magnetization direction of the second pinned magnetic layer 25c and the magnetization direction of the second free magnetic layer 27a that directly contributes to the change (output) in the electric resistance value, and these relative angles are detected. It is preferable that they are orthogonal to each other in a state where a current is applied and a recording signal magnetic field is not applied.

In this embodiment, for example, the upper electrode layer 33 is used.
Since a sense current flows from the bottom electrode layer 21 to the bottom electrode layer 21,
The sense current flows through each layer in the multilayer film in a direction perpendicular to the film surface. A magnetic detection element in which the sense current flows in each layer in the multilayer film in a direction perpendicular to the film surface is called a CPP type magnetic detection element.

In the present invention, the track width is about 10 nm.
The thickness is preferably 300 nm or less. More preferably, it is about 10 nm or more and 100 nm or less. More preferably, about 10 nm or more and 60 nm
It is the following. When the track width is narrowed down to the above numerical range, the reproduction output can be further improved.

Lower shield layer 20, lower electrode layer 21, underlayer 22, seed layer 23, antiferromagnetic layer 24, pinned magnetic layer 25, nonmagnetic material layer 26, free magnetic layer 27, protective layer 2
8, bias underlayer 30, 30, hard bias layer 3
1, 31, the insulating layers 32 and 32, the upper electrode layer 33, and the upper shield layer 34 are formed by a thin film forming process such as a sputtering method or a vapor deposition method.

Lower shield layer 20 and upper shield layer 3
4 is formed using a magnetic material such as NiFe. The lower shield layer 20 and the upper shield layer 34 preferably have easy axes of magnetization oriented in the track width direction (X direction in the drawing). The lower shield layer 20 and the upper shield layer 34 may be formed by electrolytic plating.

The antiferromagnetic layer 24 is a PtMn alloy or X-Mn (where X is Pd, Ir, Rh, Ru,
An alloy of one or more of Os, Ni and Fe) or Pt—Mn—X ′ (where X ′ is Pd, Ir, Rh, Ru, Au, Ag, Os,
An alloy of any one of Cr, Ni, Ar, Ne, Xe, and Kr or two or more elements) is used.

These alloys have a disordered face-centered cubic structure (fcc) immediately after film formation, but undergo a structural transformation to a CuAuI-type ordered face-centered tetragonal structure (fct) by heat treatment.

The film thickness of the antiferromagnetic layer 24 is 80 to 300Å, for example, 200Å near the center in the track width direction.

Here, in the PtMn alloy and the alloy represented by the formula X-Mn for forming the antiferromagnetic layer 24, Pt or X is preferably in the range of 37 to 63 at%. Further, in the PtMn alloy and the alloy represented by the formula X-Mn, it is more preferable that Pt or X is in the range of 47 to 57 at%. Unless otherwise specified, the upper and lower limits of the numerical range indicated by are as follows.

In the alloy represented by the formula Pt-Mn-X ', X' + Pt is preferably in the range of 37 to 63 at%. Further, in the alloy represented by the formula of Pt—Mn—X ′, X ′ + Pt is 47 to 57 at%.
The range is more preferably. Further, the Pt-
In the alloy represented by the formula of Mn-X ', X'is 0.2.
It is preferably in the range of 10 at%. However,
When X ′ is any one or more of Pd, Ir, Rh, Ru, Os, Ni and Fe, X ′
Is preferably in the range of 0.2 to 40 at%.

By using these alloys and heat-treating them, the antiferromagnetic layer 24 which generates a large exchange coupling magnetic field can be obtained. Particularly, in the case of a PtMn alloy, an excellent antiferromagnetic layer 24 having an exchange coupling magnetic field of 48 kA / m or more, for example, more than 64 kA / m, and a blocking temperature for losing the exchange coupling magnetic field of 380 ° C. is extremely high. You can

The first pinned magnetic layer 25a and the second pinned magnetic layer 25c are made of a ferromagnetic material, for example, NiFe alloy, Co, CoFeNi alloy, CoFe alloy, CoNi alloy, or the like. In particular, it is preferably formed of CoFe alloy or Co. The first pinned magnetic layer 25a and the second pinned magnetic layer 25c are preferably made of the same material.

The non-magnetic intermediate layer 25b is made of a non-magnetic material and is made of Ru, Rh, Ir, Cr, R.
e, Cu, or one or more of these alloys. It is particularly preferably formed of Ru.

The first pinned magnetic layer 25a and the second pinned magnetic layer 25c are each formed to have a thickness of about 10 to 70Å. The thickness of the non-magnetic intermediate layer is about 3Å to 10Å.

The pinned magnetic layer 25 has a single-layer structure using any of the above magnetic materials or a two-layer structure including a layer formed of any of the above magnetic materials and a diffusion preventing layer such as a Co layer. Is also good.

Further, in FIG. 1, the magnetic film thickness (Ms × t;
The first pinned magnetic layer 25a and the second pinned magnetic layer 25c, which have different saturation magnetization and film thickness), are stacked via the non-magnetic intermediate layer 25b to function as one pinned magnetic layer 25.

The first pinned magnetic layer 25a is formed in contact with the antiferromagnetic layer 24, and is annealed in a magnetic field to exchange-couple at the interface between the first pinned magnetic layer 25a and the antiferromagnetic layer 24. Causes an exchange anisotropic magnetic field, and the magnetization direction of the first pinned magnetic layer 25a is pinned in the Y direction in the figure. When the magnetization direction of the first pinned magnetic layer 25a is pinned in the Y direction in the figure, the magnetization direction of the second pinned magnetic layer 25c that faces the non-magnetic intermediate layer 25b is the same as the magnetization direction of the first pinned magnetic layer 25a. It is fixed in the antiparallel state.

Thus, the first pinned magnetic layer 25a and the second pinned magnetic layer 25a
When the pinned magnetic layer 25c is in a ferrimagnetic state in which the magnetization directions are antiparallel to each other, the first pinned magnetic layer 25a and the second pinned magnetic layer 25c fix the other magnetized direction to each other. The magnetization direction of the pinned magnetic layer 25 can be strongly pinned in a fixed direction.

The magnetic film thickness (Ms × t) of the first pinned magnetic layer 25a and the magnetic film thickness (M of the second pinned magnetic layer 25c).
s × t) composite magnetic film thickness (Ms × t)
Is the magnetization direction of the pinned magnetic layer 25.

In FIG. 1, the first pinned magnetic layer 25a and the second pinned magnetic layer 25a
The fixed magnetic layer 25c is formed by using the same material, and further,
By making the respective film thicknesses different, the respective magnetic film thicknesses (Ms × t) are made different.

Further, the demagnetizing field (dipole magnetic field) due to the fixed magnetization of the first pinned magnetic layer 25a and the second pinned magnetic layer 25c.
Can be canceled by the static magnetic field couplings of the first pinned magnetic layer 25a and the second pinned magnetic layer 25c canceling each other out. As a result, the contribution of the demagnetizing field (dipole magnetic field) due to the fixed magnetization of the fixed magnetic layer 25 to the variable magnetization of the free magnetic layer 27 can be reduced.

Therefore, it becomes easier to correct the direction of the variable magnetization of the free magnetic layer 27 to a desired direction, and it is possible to obtain a spin valve type thin film magnetic element with small asymmetry and excellent symmetry.

Here, the asymmetry indicates the degree of asymmetry of the reproduction output waveform, and when the reproduction output waveform is given, the asymmetry becomes small if the waveform is symmetrical. Therefore, as the asymmetry approaches 0, the reproduced output waveform has better symmetry.

The asymmetry is based on the free magnetic layer 27.
Is 0 when the direction of the magnetization of 1 and the direction of the fixed magnetization of the fixed magnetic layer 25 are orthogonal to each other. If the asymmetry is greatly deviated, the information cannot be read accurately from the medium, which causes an error. Therefore, the smaller the asymmetry, the higher the reliability of the reproduction signal processing, and the better the spin valve thin film magnetic element.

The demagnetizing field (dipole magnetic field) Hd due to the pinned magnetization of the pinned magnetic layer 25 has a non-uniform distribution in the element height direction of the free magnetic layer 27, being large at the ends and small at the center. In some cases, the formation of a single magnetic domain in the free magnetic layer 27 may be hindered. However, the fixed magnetic layer 25 having the above-described laminated structure can reduce the dipole magnetic field Hd, which allows the free magnetic layer 27 to be formed. It is possible to prevent generation of Barkhausen noise and the like due to formation of domain walls and non-uniform magnetization.

The non-magnetic material layer 26 is a layer for preventing magnetic coupling between the fixed magnetic layer 25 and the free magnetic layer 27,
It is preferably formed of a non-magnetic material having conductivity such as Cu, Cr, Au, Ag. Particularly, Cu is preferable. The nonmagnetic material layer 26 is, for example, 1
It is formed with a film thickness of about 8 to 30 Å.

The nonmagnetic material layer 26 is made of Al ₂ O ₃ or Si.
Although it may be formed of an insulating material such as O ₂ , in the case of the CPP type magnetic detection element as in the present invention, a sense current also flows in the nonmagnetic material layer 26 in the direction perpendicular to the film surface. Therefore, when the non-magnetic material layer 26 is an insulator, the thickness of the non-magnetic material layer 26 is 50Å
It is necessary to reduce the withstand voltage by forming it thinly.
When the non-magnetic material layer 26 is formed of a material having a specular reflection effect such as Al ₂ O ₃ or TaO ₂ , the non-magnetic material layer 26 functions as a specular film or a current limiting layer that reduces the effective element area. You can also let it.

The first free magnetic layer 27c and the second free magnetic layer 27a are made of a ferromagnetic material, for example, NiFe alloy, Co, CoFeNi alloy, CoFe.
Alloy, CoNi alloy, etc.,
In particular, it is preferably formed of NiFe alloy, CoFe alloy, or CoFeNi alloy.

The non-magnetic intermediate layer 27b is made of a non-magnetic material and is made of Ru, Rh, Ir, Cr, Re, C.
It is formed of one of u or an alloy of two or more thereof. It is particularly preferably formed of Ru.

The first free magnetic layer 27c and the second free magnetic layer 27a are each formed to have a thickness of about 10 to 70Å. The non-magnetic intermediate layer 27b is formed to have a film thickness of about 3Å to 10Å.

It is preferable that the second free magnetic layer 27a has a two-layer structure and a Co film is formed on the side facing the nonmagnetic material layer 26. This can prevent the diffusion of the metal element or the like at the interface with the non-magnetic material layer 26 and increase the resistance change rate (ΔR / R).

The free magnetic layer 27 may have a single-layer structure using any of the above magnetic materials.

In the present embodiment, it is preferable that at least one of the first free magnetic layer 27c and the second free magnetic layer 27a is made of a magnetic material having the following composition.

The composition formula is represented by CoFeNi, the composition ratio of Fe is 9 atom% or more and 17 atom% or less, the composition ratio of Ni is 0.5 atom% or more and 10 atom% or less, and the remaining composition is Co. .

As a result, the first free magnetic layer 27c and the second free magnetic layer 27c
The exchange coupling magnetic field in the RKKY interaction generated between the free magnetic layers 27a can be strengthened. Specifically, the magnetic field when the antiparallel state collapses, that is, the spin-flop magnetic field (Hsf) can be increased to about 293 (kA / m).

Therefore, the first free magnetic layer 27c and the second free magnetic layer 27c
The magnetization of the free magnetic layer 27a can be appropriately set in the antiparallel state.

It is preferable that both the first free magnetic layer 27c and the second free magnetic layer 27a are formed of the CoFeNi alloy. As a result, a higher spin-flop magnetic field can be obtained more stably, and the first free magnetic layer 2
7c and the second free magnetic layer 27a can be appropriately magnetized in an antiparallel state.

Within the above composition range, the magnetostriction of the first free magnetic layer 27c and the second free magnetic layer 27a is-.
It can be contained within the range of 3 × 10 ⁻⁶ to 3 × 10 ⁻⁶ , and the coercive force can be reduced to 790 (A / m) or less.

Further, the soft magnetic characteristics of the free magnetic layer 27 are improved, and Ni between the free magnetic layer 27 and the nonmagnetic material layer 26 is improved.
Resistance change amount (ΔR) and resistance change rate (ΔR /
It is possible to appropriately suppress the reduction of R).

A diffusion prevention layer made of Co or the like is provided between the second free magnetic layer 27a and the nonmagnetic material layer 26, and
When at least one of the free magnetic layer 27c and the second free magnetic layer 27a is formed of a CoFeNi alloy, the above C
It is preferable that the composition ratio of Fe in the oFeNi alloy is 7 atomic% or more and 15 atomic% or less, the composition ratio of Ni is 5 atomic% or more and 15 atomic% or less, and the remaining composition ratio is Co.

The free magnetic layer 27 has a magnetic film thickness (Ms ×
t; the second free magnetic layer 27a and the first free magnetic layer 27c having different magnitudes of the saturation magnetization and the film thickness) are stacked via the non-magnetic intermediate layer 27b, and the second free magnetic layer 27a and the first free magnetic layer 27a are laminated. This is a ferrimagnetic state in which the magnetization directions of the free magnetic layer 27c are antiparallel. At this time, the magnetic film thickness (Ms × t)
Is larger, for example, the magnetization direction of the second free magnetic layer 27a faces the direction of the magnetic field generated from the hard bias layer (X direction in the drawing), and the magnetization direction of the first free magnetic layer 27c is the opposite direction of 180 degrees ( It is in a state of being oriented in the direction antiparallel to the X direction in the drawing).

When the second free magnetic layer 27a and the first free magnetic layer 27c are in the antiparallel ferrimagnetic state in which the magnetization directions are different by 180 degrees, the same effect as thinning the free magnetic layer is obtained, The effective magnetic moment per unit area is reduced, the magnetization of the free magnetic layer 27 is easily changed, and the magnetic field detection sensitivity of the magnetic detection element is improved.

The magnetic film thickness of the second free magnetic layer 27a (M
s × t) and the magnetic film thickness of the first free magnetic layer 27c (Ms
The direction of the synthetic magnetic film thickness (Ms × t) obtained by adding up × t) is the magnetization direction of the free magnetic layer 27.

However, it is only the magnetization direction of the second free magnetic layer 27a that contributes to the output in relation to the magnetization direction of the pinned magnetic layer 25.

The protective layer 28 is made of Ta, Hf, Nb, Zr,
It is formed of at least one of Ti, Mo, and W. The thickness of the protective layer 28 is about 30Å.

The hard bias layers 31 and 31 are made of Co-P.
It is formed of a hard magnetic material such as a t (cobalt-platinum) alloy or a Co-Cr-Pt (cobalt-chromium-platinum) alloy. The crystal structures of these alloys are generally in the bulk, face-centered cubic structure (fcc) and dense hexagonal structure (hcp).
The film composition is set to a composition near the mixed phase of

The bias underlayers 30, 30 are made of Cr, T
It is preferably formed of one or more elements selected from i, W, Mo, V, Mn, Nb, and Ta. For example, it is formed of Cr or W ₅₀ Mo ₅₀ . When the bias underlayers 30, 30 are formed by using Cr or the like having a bcc (body centered cubic lattice) crystal structure, the hard bias layers 31, 31 have a large coercive force and squareness ratio and a large bias magnetic field.

Here, since the lattice constants of the hcp structure of the CoPt-based alloy forming the bias underlayers 30 and 30 and the hard bias layers 31 and 31 formed of the above-mentioned metals are close to each other, the CoPt-based alloy has fcc. It is difficult to form a structure, and the hcp structure is likely to be formed. At this time, the c-axis of the hcp structure is preferentially oriented within the boundary surface between the CoPt-based alloy and the bias underlayers 30, 30. Since the hcp structure causes a large magnetic anisotropy in the c-axis direction as compared with the fcc structure, the coercive force H when a magnetic field is applied to the hard bias layers 31 and 31.
c becomes large. Further, since the c-axis of hcp is preferentially oriented within the boundary surface between the CoPt-based alloy and the bias underlayers 30, 30, the remanent magnetization increases, and the squareness ratio S obtained by the remanent magnetization / saturation magnetization increases. . As a result, the characteristics of the hard bias layers 31 and 31 can be improved, and the bias magnetic field generated from the hard bias layers 31 and 31 can be increased.

The hard bias layers 31 and 31 need only be aligned in the magnetization direction of one of the second free magnetic layer 27a and the first free magnetic layer 27c forming the free magnetic layer 27. For example, when the magnetization direction of the second free magnetic layer 27a is aligned in a fixed direction, the first free magnetic layer 27c
Becomes a ferrimagnetic state in which the magnetization directions are antiparallel, and the magnetization direction of the entire free magnetic layer 27 is aligned in a fixed direction.

The lower electrode layer 21 and the upper electrode layer 33 are
Can be formed using W, Ta, Cr, Cu, Rh, Ir, Ru, Au or the like as a material.

The lower electrode layer 21 and the upper electrode layer 33.
In the case of using Ta as the above, by providing an intermediate layer of Cr in the lower layer of the upper electrode layer 33, the crystal structure of Ta laminated on the upper layer of Cr can be easily made into a low-resistance body-centered cubic structure.

In addition, the lower electrode layer 21 and the upper electrode layer 33
When Cr is used as the above, by providing an intermediate layer of Ta under the upper electrode layer 33, Cr is epitaxially grown and the resistance value can be reduced.

The magnetic sensing element shown in FIG. 1 has a multilayer film T
1 is formed inside the through hole H provided in the insulating material layer 29. Since the multilayer film T1 is formed inside the through hole H provided in the insulating material layer 29, the multilayer film T1 is protected by the insulating material layer 29.
Therefore, when the multilayer film T1 is carved out by ion milling or the like, it is possible to prevent the central portion C of the multilayer film T1 located inside the through hole H and having magnetic field detection capability from being damaged.

Further, in the magnetic sensing element of FIG. 1, the multilayer film T
The side ends S 1 and S 1 of the first layer are stacked on the upper surface 29a1 of the insulating material layer 29. The upper surface 29a1 of the insulating material layer 29
The side edges S, S of the multilayer film T1 laminated on the
The magnetoresistive effect is lower than that of the central portion C of the.

Since the multilayer film T1 is formed from the inside of the through hole H to the upper surface 29a1 of the insulating material layer 29, it is bent at the edge of the upper opening of the through hole H, that is, on the corner 29b of the insulating material layer 29. To do. The rate of change in magnetoresistance of the multilayer film T1 decreases at the bent portion (bent portion).

Therefore, when a current in the direction perpendicular to the film surface is applied to the central portion C of the multilayer film T1, only the magnetoresistance change in the central portion C is mainly detected, and the magnetic fields of the side end portions S and S of the multilayer film T1 are detected. The resistance effect is no longer detected.

It is also possible to intentionally reduce the magnetoresistive effect by implanting milling particles on the side end portions S, S of the multilayer film T1, especially on the side end surfaces T1s, T1s.

In the spin-valve type magnetoresistive element such as the multilayer film T1, when the free magnetic layer 27 and the fixed magnetic layer 25 are short-circuited, an external magnetic field is applied and the magnetization direction of the free magnetic layer 27 changes. As described above, in the conventional magnetic detection element that does not function as a magnetic detection element because the resistance change does not occur, there is a high probability that the free magnetic layer and the fixed magnetic layer are short-circuited due to redeposition of the metal material in the manufacturing process.

However, in the present invention, the multilayer film T1 is formed inside the through hole H and is protected by the insulating material layer 29. Therefore, it is possible to prevent a short circuit between the free magnetic layer 27 and the pinned magnetic layer 25.

As shown in FIG. 1, when the side edges S, S of the multilayer film T1 are laminated on the upper surface 29a1 of the insulating material layer 29, the side edges of the free magnetic layer 27 and the pinned magnetic layer 25 are formed. The metal material may redeposit. However, it is sometimes preferable that the side edges S, S of the multilayer film T1 stacked on the upper surface 29a1 of the insulating material layer 29 are not involved in the magnetic field detectability, and thus the direction normal to the upper surface of the multilayer film T1 (magnetic detection). It is preferable to grind by milling with a large incident angle with respect to the normal direction to the substrate surface on which the element is formed. By this milling process, the free magnetic layer 27
By removing the metal material redeposited on the side end surface of the pinned magnetic layer 25, the electrical short circuit between the free magnetic layer 27 and the pinned magnetic layer 25 can be eliminated.

The insulating material layer 29 preferably has a specular reflection effect. Further, in FIG. 1, the lower electrode layer 21
The lower shield layer 20 is formed on the lower layer of the upper electrode layer 3
An upper shield layer 34 is formed on the upper layer of No. 3. However, the lower electrode layer 21 and the upper electrode layer 33 may be formed of a magnetic material, and the lower electrode layer 21 and the upper electrode layer 33 may have the functions of the lower shield layer and the upper shield layer, respectively.

When the distances W1 _R and W1 _L from the center position Hc of the through hole H in the track width direction to the outer surfaces 29c, 29c of the insulating material layer 29 are equal, the free magnetic layer 27 is separated from the hard bias layers 31, 31. The magnitude of the longitudinal bias magnetic field to be received is equal at the right end portion and the left end portion in the X direction in the drawing, which is preferable.

FIG. 2 is a partial cross-sectional view of the magnetic sensing element according to the second embodiment of the present invention as seen from the side facing the recording medium.

The magnetic sensing element shown in FIG. 2 has a multilayer film T
2 is a synthetic ferri-free type free magnetic layer 27 including a first free magnetic layer 27c, a non-magnetic intermediate layer 27b, and a second free magnetic layer 27a, a non-magnetic material layer 26, a second pinned magnetic layer 25c, and A so-called top-type spin-valve magnetoresistor in which a synthetic ferripinned pinned magnetic layer 25 including a non-magnetic intermediate layer 25b and a first pinned magnetic layer 25a, an antiferromagnetic layer 24, and a protective layer 28 are laminated in this order from the bottom. It differs from the magnetic sensing element shown in FIG. 1 in that it is an effect element.

In the magnetic detecting element shown in FIG. 2 in which the order of stacking the multilayer films is different, the through hole H provided with the multilayer film T2 in the insulating material layer 29 is provided as in the magnetic detecting element shown in FIG. Since it is formed inside, the multilayer film T2 is protected by the insulating material layer 29.

Therefore, when the multilayer film T2 is carved out by ion milling or the like, it is possible to prevent the central portion C of the multilayer film T2 located inside the through hole H and having the magnetic field detection ability from being damaged.

In the magnetic sensing element of FIG. 2 also, the multilayer film T
The two side ends S, S are stacked on the upper surface 29a1 of the insulating material layer 29. The side end portions S, S of the multilayer film T2 stacked on the upper surface 29a1 of the insulating material layer 29 have a lower magnetoresistive effect than the central portion C of the multilayer film T2.

FIG. 3 is a partial cross-sectional view of a magnetic detection element according to the third embodiment of the present invention as seen from the side facing a recording medium.

The magnetic detecting element of FIG. 3 has the magnetic field detecting element of FIG. 2 in that exchange bias layers 35, 35 are formed as longitudinal bias layers at positions overlapping the lowermost first free magnetic layer 27c of the multilayer film T2. Different from the element. The lower electrode layer 21 is the exchange bias layer 3
It is formed between 5 and 35.

In the magnetic sensing element shown in FIG. 3 as well, like the magnetic sensing element shown in FIG. 2, since the multilayer film T2 is formed inside the through hole H provided in the insulating material layer 29, the multi-layered film is formed. The film T2 is protected by the insulating material layer 29.

Therefore, when the multilayer film T2 is carved out by ion milling or the like, it is possible to prevent the central portion C of the multilayer film T2 located inside the through hole H and having the magnetic field detection capability from being damaged.

In the magnetic sensing element of FIG. 3 also, the multilayer film T
The two side ends S, S are stacked on the upper surface 29a1 of the insulating material layer 29. The side end portions S, S of the multilayer film T2 stacked on the upper surface 29a1 of the insulating material layer 29 have a lower magnetoresistive effect than the central portion C of the multilayer film T2.

The exchange bias layers 35, 35 are
As with the antiferromagnetic layer 24, a PtMn alloy or X-
Mn (where X is Pd, Ir, Rh, Ru, Os, N
i, Fe is one or more elements selected from Fe)
Alloy or Pt-Mn-X '(where X'is P
d, Ir, Rh, Ru, Au, Ag, Os, Cr, N
i, Ar, Ne, Xe, Kr, which is one or more elements).

The exchange bias layers 35, 3
5 is preferably formed of one or more of α-Fe ₂ O ₃ , NiO, and CoO.

The exchange bias layers 35, 35 made of α-Fe ₂ O ₃ , NiO or the like are insulative,
Therefore, the sense current is changed to the exchange bias layers 35, 3
It is possible to appropriately suppress the diversion to 5.

The first free magnetic layer 27c is exchanged with the exchange bias layers 35, 35 by an anisotropic magnetic field,
The magnetization direction is aligned with the track width direction (X direction in the drawing),
The second free magnetic layer 27a has a magnetization direction that is antiparallel to the X direction in the drawing due to the RKKY interaction with the first free magnetic layer 27c.

When the free magnetic layer 27 is made into a single magnetic domain by the exchange bias layers 35 and 35, the optical track width defined by the distance between the exchange bias layers 35 and 35 and the region where the magnetization of the free magnetic layer 27 varies. The magnetic track widths defined by the track width direction dimensions match.

That is, unlike the structure in which the bias magnetic field is applied by the hard bias layer, there is an advantage that a so-called dead area is not formed in the area of the optical track width.

In the hard bias type magnetic sensing element shown in FIGS. 1 and 2, the insulating material layer 29 between the side end surface 31a of the hard bias layer 31 and the side surface Ha of the through hole H is formed.
Of the hard bias layer 3 to the free magnetic layer 27.
It may be difficult to control the thickness so that a sufficient bias magnetic field is applied from 1, 31. In the magnetic sensing element shown in FIG. 4, the exchange bias layers 35, 35
It is only necessary to stack the first free magnetic layer 27c at a position overlapping with.

The exchange bias type magnetic sensing element having these advantages is a particularly advantageous longitudinal bias type when miniaturizing the magnetic sensing element.

The exchange bias layers 35, 3
A ferromagnetic layer made of a ferromagnetic material or a layer made of a non-magnetic material may be formed between 5 and the free magnetic layer 27. Alternatively, the exchange bias layers 35, 35 may be formed of a ferromagnetic material.

FIG. 4 is a partial cross-sectional view of the magnetic sensing element of the fourth embodiment of the present invention as seen from the side facing the recording medium.

The magnetic detecting element shown in FIG.
A multi-layered film T in which a separation layer 36 made of a non-magnetic material is laminated on the above, and an in-stack bias layer 37 made of a hard magnetic material is laminated as a longitudinal bias layer on the separation layer 36.
3 is different from the magnetic sensing element shown in FIG. 1 in that the hard bias layer is not formed.

Below the separation layer 36, a synthetic ferri-pinned type including an underlayer 22, a seed layer 23, an antiferromagnetic layer 24, a first pinned magnetic layer 25a, a nonmagnetic intermediate layer 25b, and a second pinned magnetic layer 25c. Pinned magnetic layer 25, non-magnetic material layer 26, second free magnetic layer 27a, non-magnetic intermediate layer 27.
b, the structure of the synthetic ferri-free type free magnetic layer 27 including the first free magnetic layer 27c is the same as that of the magnetic sensing element shown in FIG.

In the magnetic sensing element shown in FIG. 4 as well, like the magnetic sensing element shown in FIG. 1, since the multilayer film T3 is formed inside the through hole H formed in the insulating material layer 29, the multilayer The film T3 is protected by the insulating material layer 29.

Therefore, when the multilayer film T3 is carved out by ion milling or the like, the central portion C of the multilayer film T3 located inside the through hole H and having the magnetic field detection ability can be prevented from being damaged.

In the magnetic sensing element of FIG. 4 also, the multilayer film T
The side edges S, S of 3 are stacked on the upper surface 29a1 of the insulating material layer 29. The side end portions S, S of the multilayer film T3 stacked on the upper surface 29a1 of the insulating material layer 29 have a lower magnetoresistive effect than the central portion C of the multilayer film T3.

In the magnetic detecting element shown in FIG. 4, magnetostatic coupling occurs between the in-stack bias layer 37 and the free magnetic layer 27, and the magnetization direction of the free magnetic layer 27 is aligned in one direction. In FIG. 4, the first free magnetic layer 2 of the free magnetic layer 27 on the side closer to the in-stack bias layer 37.
7c and the in-stack bias layer 37 are magnetostatically coupled, the magnetization of the first free magnetic layer 27c is made into a single magnetic domain in the X direction in the figure, and the magnetization of the second free magnetic layer 27a is shown in the X direction.
The direction is 180 ° different from the direction.

The magnetic film thickness of the second free magnetic layer 27a (M
s × t) and the magnetic film thickness of the first free magnetic layer 27c (Ms
The direction of the synthetic magnetic film thickness (Ms × t) obtained by adding up × t) is the magnetization direction of the free magnetic layer 27.

In the magnetic sensing element shown in FIG. 1 or FIG. 2, buckling which causes a demagnetizing field in the free magnetic layer 27 by facing the hard bias layers 31 and 31 to the side end faces of the multilayer film in the track width direction. Phenomenon and free magnetic layer 27
In some cases, there is a problem in that the insensitive region in which the magnetization is strongly fixed near the side end face and the magnetization reversal deteriorates.

However, by providing the in-stack bias layer 37 on the surface of the free magnetic layer 27 opposite to the surface on which the non-magnetic material layer 26 is formed as shown in FIG. It is possible to solve the problem of occurrence of the dead zone.

Accordingly, the magnetic domain of the free magnetic layer 27 can be appropriately promoted, the magnetization reversal of the free magnetic layer with respect to the external magnetic field can be made excellent, and the magnetic detection element having the good reproduction sensitivity and the excellent stability of the reproduced waveform can be obtained. It is possible to manufacture.

The thickness of the in-stack bias layer 37 is preferably 50 to 300Å.

FIG. 5 is a partial cross-sectional view of the magnetic sensing element of the fifth embodiment of the present invention as seen from the side facing the recording medium.

In the magnetic sensing element shown in FIG. 5, the side surface H1a of the through hole H1 formed in the insulating material layer 48 laminated on the lower electrode layer 21 is an inclined surface with respect to the upper surface 48a1 of the insulating material layer 48. It differs from the magnetic sensing element shown in FIG. 1 in the point.

In the magnetic detecting element shown in FIG. 5, a multilayer film T4 is formed as a magnetoresistive effect element. This multilayer film T4 is similar to the multilayer film T1 of the magnetic sensing element shown in FIG. 1 from the bottom, the underlayer 40, the seed layer 41, the antiferromagnetic layer 42, the first pinned magnetic layer 43a, and the nonmagnetic intermediate layer. Layer 43b,
A synthetic ferri-pinned type fixed magnetic layer 43 including the second fixed magnetic layer 43c, a non-magnetic material layer 44, a second free magnetic layer 45a, a non-magnetic intermediate layer 45b, and a first free magnetic layer 45c. The free magnetic layer 45 and the protective layer 46 are laminated. The material of each layer is the same as the material of each layer of the multilayer film T1 in FIG.

The bias underlayer 3 is formed on the upper surface 48a2 of the portion of the insulating material layer 48 where the multilayer film T4 is not laminated.
Hard bias layers 31 and 31 are laminated via 0 and 30. Insulating layers 32, 32 are laminated on the hard bias layers 31, 31. By the insulating layers 32, 32, the upper electrode layer 33 and the side end surface T4 of the multilayer film T4 are formed.
s, T4s and the hard bias layers 31, 31 are insulated.

Also in this embodiment, the thickness of the insulating material layer 48 between the side end surface 31a of the hard bias layer 31 and the side surface H1a of the through hole H1 and the inclination angle of the side surface H1a are different from those of the free magnetic layer 45. The layers 31 and 31 are set so that a sufficient bias magnetic field is applied.

Without reactive ion milling, FIG.
The side surface Ha is the upper surface 2 of the insulating material layer 29 as shown in
The through hole H, which is a vertical surface with respect to 9a1, is formed into the insulating material layer 29.
Difficult to form. Therefore, in order to accurately form the through hole H in the insulating material layer 29, the insulating material layer 29
It was necessary to select the above materials from those that could be processed by reactive ion milling.

On the other hand, the side surface H1a as shown in FIG.
Form a through hole H1 that is an inclined surface with respect to the upper surface 48a1 of the insulating material layer 48, the material of the insulating material layer 48 is selected from a wider range such as alumina (Al ₂ O ₃ ) or Al—Si—O. can do.

The track width dimension Tw of the multilayer film T4 is the width dimension in the track width direction (X direction) of the central portion C of the multilayer film T4 located inside the through hole H1 and having the magnetic field detection capability.

In the magnetic sensing element shown in FIG. 5, as in the magnetic sensing element shown in FIG. 1, since the multilayer film T4 is formed inside the through hole H1 provided in the insulating material layer 48, the multi-layered film T4 is formed. The film T4 is protected by the insulating material layer 48.

Therefore, when the multilayer film T4 is carved and formed by ion milling or the like, it is positioned inside the through hole H1,
It is possible to prevent the central portion C of the multilayer film T4 having magnetic field detection ability from being damaged.

In the magnetic sensing element shown in FIG. 5, the multilayer film T
The side edges S, S of 4 are laminated on the upper surface 48a1 of the insulating material layer 48. The side end portions S, S of the multilayer film T4 stacked on the upper surface 48a1 of the insulating material layer 48 have a lower magnetoresistive effect than the central portion C of the multilayer film T4.

A method of manufacturing the magnetic sensing element shown in FIG. 1 will be described. First, as shown in FIG. 7, on a substrate (not shown), via an underlayer (not shown) such as alumina,
The lower shield layer 20, the lower electrode layer 21, and the insulating material layer 29 are formed. The material of each layer is the same as that of the magnetic detection element shown in FIG. In particular, it is important to use a material that can remove the insulating material layer 29 by reactive ion etching, such as SiO ₂ (silicon oxide). The thickness of the insulating material layer is, for example, 5
It is 00Å.

The formation of each layer is, for example, sputtering film formation.
In the sputtering film formation, for example, any one of a DC magnetron sputtering method, an RF magnetron sputtering method, an ion beam sputtering method, a long throw sputtering method, a collimation sputtering method, or a combination thereof can be used. Note that these sputtering methods can also be used when performing sputter film formation in the steps described below.

The lower electrode layer 21 may be formed of a magnetic material and the lower shield layer 20 may not be formed as a separate member. In this case, the lower electrode layer 21 also functions as a lower shield layer.

Next, a resist layer R is formed on the insulating material layer 29.
1, R1 are formed. The distance between the resist layers R1 and R1 in the track width direction (X direction in the drawing) is W1.

Next, the region of the insulating material layer 29 which is not covered with the resist layers R1 and R1 is ground and removed by reactive ion milling to form a through hole H.
The surface of the lower electrode layer 21 is exposed inside. By using reactive ion milling, the side surfaces Ha, H of the through hole H are
The inclination angle of the a of the insulating material layer 29 with respect to the upper surface 29a is
It can be 80 ° to 90 °. In particular, the side surfaces Ha and Ha of the through hole H may be vertical to the upper surface 29a of the insulating material layer 29.

Although it is preferable that only the insulating material layer 29 is removed and the lower electrode layer 21 is not removed by the reactive ion milling, the lower electrode layer 21 may be slightly removed.

Next, as shown in FIG. 9, the underlying layer 22, the seed layer 23, the antiferromagnetic layer 24, and the first fixed layer are formed on the lower electrode layer 21 and the insulating material layer 29 in the through hole H. A synthetic ferripinned pinned magnetic layer 2 including a magnetic layer 25a, a non-magnetic intermediate layer 25b, and a second pinned magnetic layer 25c.
5. The multilayer film T1 including the synthetic ferri-free type free magnetic layer 27 including the non-magnetic material layer 26, the second free magnetic layer 27a, the non-magnetic intermediate layer 27b, and the first free magnetic layer 27c, and the protective layer 28 is formed by sputtering. To film.

Since the material of each layer is the same as that of the magnetic sensing element shown in FIG. 1, its explanation is omitted. Further, as shown in FIG. 10, a lift-off resist layer R2 is formed on the protective layer 28 overlapping the through hole H and the opening of the through hole H of the insulating material layer 29. The width dimension of the resist layer R2 in the track width direction (X direction in the drawing) is set to W2. Further, in FIG. 10, the width dimension of the through hole H in the track width direction (X direction in the drawing) is W3. The through hole H
It is preferable that the width dimension W3 of the above is 0.3 μm or less. In the present embodiment, W2> W3.

Next, as shown in FIG. 11, a resist layer R
2 is formed, the protective layer of the portion not covered with the resist layer R2 is formed by ion milling at an incident angle inclined by an angle θ1 from the direction normal to the surface of the multilayer film T1 (direction normal to the surface of the substrate). Both sides of the multilayer film T1 composed of the layers 28 to 22 are removed, and the insulating material layer 29 is covered with the resist layer R2, and the upper surface 29a2 is the central portion of the free magnetic layer 27. C
The upper surface 27d is removed so as to be located below the upper surface 27d. The angle θ1 is, for example, 5 ° to 30 °.

Next, as shown in FIG. 12, ion milling is performed at an incident angle that is inclined by an angle θ2 from the direction normal to the surface of the multilayer film T1 (the direction normal to the surface of the substrate). The angle θ2 is larger than the angle θ1 described above and is, for example, 30 ° to 70 °.

At the time of ion milling with the incident angle θ1 shown in FIG. 11, the side end surfaces T1s and T1s of the multilayer film T1 are
The material of the multilayer film T1 may be redeposited and the free magnetic layer 27 and the pinned magnetic layer 25 may be electrically short-circuited. When the ion milling with the angle θ2 is performed, the side end surface T1s of the multilayer film T1 is
The reattachment can be removed by side milling T1s, and an electrical short circuit between the free magnetic layer 27 and the pinned magnetic layer 25 can be eliminated.

In FIG. 12, the side edges S, S of the multilayer film T1 are shown.
Are left on the upper surface 29a1 of the insulating material layer 29,
The multilayer film T1 has an edge portion of the upper opening of the through hole H, that is,
The insulating material layer 29 is bent on the corner portion 29b. Multilayer film T1
The rate of change in magnetic resistance decreases in the bent portion (bent portion).

Therefore, when an electric current is passed through the central portion C located inside the through hole H of the multilayer film T1, only the magnetoresistance change inside the through hole H is mainly detected, and the side end portions S and S of the multilayer film T1 are detected. Almost no change in magnetic resistance is detected.

Further, the side end faces T1s, T1s of the multilayer film T1
By implanting milling particles with an incident angle θ2 into
The magnetoresistive effect of the side edges S, S of the multilayer film T1 is
It can be intentionally lower than the central portion C of 1.

In the present invention, the multilayer film T1 is made of the insulating material layer 29.
Since it is formed inside the through-hole H provided in, the multilayer film T1 is protected by the insulating material layer 29.

Therefore, during the ion milling in FIG. 11 and the ion milling in FIG. 12, it is possible to prevent the central portion C of the multilayer film T1 having the magnetic field detection ability from being damaged.

The incident angle shown in FIG. 12 is the angle θ.
The outer surfaces 29c, 29c of the insulating material layer 29 are simultaneously removed by the second ion milling.

By ion milling with an incident angle of θ2, the distance from the center position Hc of the through hole H in the track width direction to the side end faces T1s and T1s on both sides of the multilayer film T1, and the insulating material from the center position Hc of the through hole H to the insulating material. The multilayer film T1 can have a bilaterally symmetrical structure by shaving the outer surfaces 29c, 29c on both sides of the layer 29 so as to have the same distance.

Particularly, the distance W _R from the central position Hc of the through hole H to the outer side surfaces 29c, 29c on both sides of the insulating material layer 29.
And W _L are equalized (see FIG. 1), the bias magnetic fields from the pair of hard bias layers 31, 31 formed in the subsequent step can be equalized on the left and right end surfaces in the track width direction of the free magnetic layer 27. .

The thickness t1 from the side surface Ha of the through hole H to the outer side surface of the insulating material layer 29 is such that a sufficient bias magnetic field is applied to the free magnetic layer 27 from the hard bias layers 31 and 31, for example. It is preferable to cut the insulating material layer 29 so as to have a thickness of 10 nm. The thickness t1 from the side surface Ha of the through hole H to the outer side surface of the insulating material layer 29 is preferably equal on both sides of the free magnetic layer 27 in the track width direction.

In the step shown in FIG. 10, it is preferable that the center position R2c of the resist layer R2 in the track width direction and the center position Hc of the through hole H in the track width direction overlap.

When the central position R2c and the central position Hc overlap, the distance from the central position Hc of the through hole H in the track width direction to both side end faces T1s, T1s of the multilayer film T1 and the central position Hc of the through hole H. To both outer surfaces 29c, 29c of the insulating material layer 29 are equal.

In order to overlap the central position R2c and the central position Hc, the central position Gc and the central position R2c of the region sandwiched by the resist layers R1 and R1 shown in FIG. 7 may overlap each other.

In the process of FIG. 12, the distance between the free magnetic layer 27 and the hard bias layer 31 can be adjusted by adjusting the scraping amount of the outer surface 29c of the insulating material layer 29. The magnitude of the longitudinal bias field received from layer 31 can be adjusted.

It is preferable that the insulating material layer 29 is a specular film (specular reflection film) that specularly reflects the spin state (energy, quantum state, etc.) of the conduction electrons flowing in the multilayer film T1.

Next, the bias base layer 3 is formed on the insulating material layer 29.
0 and 30 and hard bias layers 31 and 31 are formed by sputtering. The hard bias layers 31 and 31 are formed so as to face at least the side end surfaces of the free magnetic layer 27 in the track width direction.

The bias underlayers 30, 30 are preferably formed of a metal film having a body-centered cubic structure (bcc structure) as a crystal structure. At this time, it is preferable that the crystal orientation of the bias underlayers 30, 30 is preferentially oriented in the (100) plane.

The incident angle of the sputtered particles during the sputtering of the bias underlayers 30, 30 and the hard bias layers 31, 31 is, for example, 5 ° to 60 ° from the direction normal to the upper surface of the multilayer film T1.

A longitudinal bias magnetic field is supplied from the hard bias layers 31 and 31 to the free magnetic layer 27, and the magnetization of the free magnetic layer 27 is appropriately made into a single domain in the track width direction (X direction in the drawing).

Next, the insulating layers 32 and 3 are formed on the hard bias layer.
2 is formed by sputtering. The thickness of the insulating layers 32, 32 is 50
It is preferably about 200 Å. As a result, the sense current flowing from the upper electrode layer 33 is applied to the hard bias layer 3
It is possible to suppress the diversion into 1, 31.

The incident angle of the sputtered particles at the time of sputtering the insulating layers 32, 32 is, for example, 0 ° to 30 ° from the direction normal to the upper surface of the multilayer film T1.

The materials for the bias underlayers 30, 30, the hard bias layers 31, 31, and the insulating layers 32, 32 are shown in FIG.
Since it is the same as the magnetic detection element shown in, the description is omitted.

The material layers for the bias underlayer 30, the hard bias layer 31, and the insulating layer 32 are the resist layers R.
It adheres to the upper surface and side end surface of 2.

Then, the resist layer R2 is removed. After removing the resist layer R2, the upper electrode layer 33 and the upper magnetic pole layer 34, which are electrically connected to the upper surface of the multilayer film T1, are laminated to form the magnetic sensing element shown in FIG.

When the top-spin type magnetic sensing element shown in FIG. 2 is formed, the free magnetic layer 27, the non-magnetic material layer 26, and the pinned magnetic layer are stacked in this order from the bottom in the multilayer film stacking step shown in FIG. 25, the antiferromagnetic layer 24, and the protective layer 28 may be stacked.

When forming the magnetic sensing element shown in FIG. 3, exchange bias layers 35, 35 made of an antiferromagnetic material are formed on both sides of the lower electrode layer 21, and the exchange bias layers 35, 35 are formed on the exchange bias layers 35, 35. The free magnetic layer 27 may be formed at the overlapping position.

In the magnetic detecting element shown in FIG. 3,
The direction of the exchange anisotropic magnetic field generated between the antiferromagnetic layer 24 and the first pinned magnetic layer 25a and the direction of the exchange anisotropic magnetic field generated between the first free magnetic layer 27c and the exchange bias layers 35, 35 are set. Need to be crossed.

As a method of crossing the directions of the exchange anisotropic magnetic field, after stacking the exchange bias layers 35, 35,
While applying the first magnetic field in the direction orthogonal to the track width direction, heat treatment is performed at the first heat treatment temperature to generate an exchange coupling magnetic field in the antiferromagnetic layer 24 and the exchange bias layers 35, 35, and the fixed magnetic layer. 25 and free magnetic layer 27
Of the exchange bias magnetic field of the antiferromagnetic layer 24 while fixing the magnetization of the exchange bias layer 3 in the orthogonal direction.
5 and 35, and then the exchange bias layer 35 in the above step in the track width direction,
Which is larger than the exchange coupling magnetic field of 35 and which is the antiferromagnetic layer 24.
While applying a second magnetic field smaller than the exchange coupling magnetic field of
There is a method of performing a heat treatment at a second heat treatment temperature higher than the first heat treatment temperature and applying a longitudinal bias magnetic field to the free magnetic layer 27 in a direction intersecting with the magnetization direction of the pinned magnetic layer 25.

The exchange bias layers 35, 3
A ferromagnetic layer made of a ferromagnetic material or a layer made of a non-magnetic material may be formed between 5 and the free magnetic layer 27. Alternatively, the exchange bias layers 35, 35 may be formed of a ferromagnetic material.

Further, when the magnetic sensing element shown in FIG. 4 is formed, the surface of the free magnetic layer 27 opposite to the surface on which the nonmagnetic material layer 26 is formed in the multilayer film laminating step shown in FIG. In addition, an in-stack bias layer 37 made of a ferromagnetic material is provided via a separation layer 36 made of a non-magnetic material.
May be laminated.

When the magnetic sensing element shown in FIG. 5 is formed, the resist layer R1 is formed in the step shown in FIG.
When the inclined surface is formed on the side surface, the through hole H1 in which the side surface H1a becomes the inclined surface can be formed by milling. When forming the magnetic sensing element in FIG. 5, the material of the insulating material layer 48 is alumina (Al ₂ O ₃ ) or Al—Si—O.
Etc. can be selected from a wider range.

14 and 15 are views showing a magnetic head provided with the magnetic detecting element of the present invention. 14 is a perspective view of the slider as seen from the side facing the recording medium.
5 is a vertical cross-sectional view taken along the line D-D shown in FIG. 14 and viewed in the direction of the arrow.

As shown in FIGS. 14 and 15, the GMR head h1 including the magnetic detection element is provided at the trailing end 50a of the slider together with the inductive head h2 to form a magnetic head, and a hard disk. It is possible to detect and record the recording magnetic field of a magnetic recording medium such as.

As shown in FIG. 14, on the surface (ABS surface) 52 of the slider 50 facing the recording medium, rails 52a,
52a and 52a are formed, and air grooves 52b and 52b are formed between the rails.

As shown in FIG. 15, the GMR head h1
Is a lower shield layer 53 made of a magnetic alloy formed on the end surface 50a of the slider 50, a lower electrode layer 54 laminated on the lower shield layer 53, and a surface 52 facing the recording medium.
It is composed of a magnetic detection element 55 of the present invention exposed from the above, an upper electrode layer 56, and an upper shield layer 57.

The upper shield layer 57 is also used as the lower core layer of the inductive head h2.

The inductive head h2 is bonded to the lower core layer (upper shield layer) 57, the gap layer 58 laminated on the lower core layer 57, the coil 59, and the gap layer 58 on the surface facing the recording medium. , And the upper core layer 60 joined to the lower core layer 57 at the base end portion 60a.

A protective layer 61 made of alumina or the like is laminated on the upper core layer 60.

In addition, in FIG. 14 and FIG.
The direction is the track width direction, the Y direction in the drawing is the direction of the leakage magnetic field from the recording medium (height direction), and the Z direction in the drawing is the moving direction of the recording medium.

Further, in the present invention, the multilayer film may be used as a magnetic detection element called a tunnel type magnetoresistive effect element. In the tunnel type magnetoresistive effect element, the nonmagnetic material layer 26 is formed of an insulating material such as Al ₂ O ₃ or SiO ₂ .

The magnetic detecting element according to the present invention can be used not only for the magnetic head mounted in the hard disk device, but also for the magnetic head for tape, the magnetic sensor and the like.

Although the present invention has been described above with reference to its preferred embodiments, various modifications can be made without departing from the scope of the present invention.

The above-described embodiments are merely examples, and do not limit the scope of the claims of the present invention.

[0238]

The present invention provides a magnetoresistive effect element, an upper electrode layer electrically connected to the upper surface of the magnetoresistive effect element, and a lower electrode layer electrically connected to the lower surface of the magnetoresistive effect element. In the magnetic detection element that has a magnetic field and that supplies a current in a direction perpendicular to the film surface of the magnetoresistive effect element, the magnetoresistive effect element is formed inside the through hole provided in the insulating material layer. The effect element is protected by the insulating material layer.

Therefore, when the magnetoresistive effect element is carved out by ion milling or the like, it is possible to prevent the portion of the magnetoresistive effect element having the magnetic field detecting ability from being damaged.

In the magnetic detecting element of the present invention, the side end portion of the magnetoresistive effect element may be laminated on the upper surface of the insulating material layer.

When the side end portion of the magnetoresistive effect element is laminated on the upper surface of the insulating material layer, the magnetoresistive effect element is formed from the inside of the through hole to the upper surface of the insulating material layer, and the through hole is formed. Bend over the edge of the upper opening of the hole. The rate of change in magnetoresistance of the magnetoresistive element decreases at the bent portion (bent portion).

Therefore, when an electric current is passed through the central portion of the magnetoresistive effect element located inside the through hole, only the magnetoresistive change inside the through hole is detected, and the side end portion of the magnetoresistive effect element is detected. The magnetoresistive effect of is lower than that of the central portion.

It is also possible to intentionally reduce the magnetoresistive effect by implanting milling particles at the side end portions of the magnetoresistive effect element.

When the magnetoresistive effect element is the multi-layered film and the side end portion of the multi-layered film is laminated on the upper surface of the insulating material layer, the free magnetic layer and the pinned magnetic layer are formed. The metal material may redeposit on the side end faces. However, by milling with a large incident angle with respect to the direction normal to the upper surface of the multilayer film (direction normal to the surface of the substrate on which the magnetic detection element is formed), the free magnetic layer and the pinned magnetic layer are separated. The metal material redeposited on the side end surface can be removed to eliminate an electrical short circuit between the free magnetic layer and the pinned magnetic layer.

[Brief description of drawings]

FIG. 1 is a sectional view of a magnetic detection element according to a first embodiment of the present invention,

FIG. 2 is a sectional view of a magnetic detection element according to a second embodiment of the present invention,

FIG. 3 is a sectional view of a magnetic detection element according to a third embodiment of the present invention,

FIG. 4 is a sectional view of a magnetic detection element according to a fourth embodiment of the present invention,

FIG. 5 is a sectional view of a magnetic detection element according to a fifth embodiment of the present invention,

FIG. 6 is a pattern explanatory view for explaining a specular reflection effect by a specular film,

FIG. 7 is a process chart showing an embodiment of a method for manufacturing a magnetic sensing element of the present invention,

FIG. 8 is a process chart showing an embodiment of a method for manufacturing a magnetic sensing element of the present invention,

FIG. 9 is a process chart showing an embodiment of a method for manufacturing a magnetic sensing element of the present invention,

FIG. 10 is a process chart showing an embodiment of a method for manufacturing a magnetic sensing element of the present invention,

FIG. 11 is a process chart showing an embodiment of a method for manufacturing a magnetic sensing element of the present invention,

FIG. 12 is a process chart showing an embodiment of a method for manufacturing a magnetic sensing element of the present invention,

FIG. 13 is a process chart showing an embodiment of a method for manufacturing a magnetic sensing element of the present invention,

FIG. 14 is a perspective view of a magnetic head to which the magnetic detection element of the present invention is attached,

15 is a cross-sectional view of the magnetic head shown in FIG.

FIG. 16 is a process chart showing a conventional method for manufacturing a magnetic sensing element,

FIG. 17 is a process chart showing a conventional method for manufacturing a magnetic sensing element,

FIG. 18 is a sectional view showing a conventional magnetic sensor.

[Explanation of symbols]

20 Lower shield layer 21 Lower electrode layer 22 Underlayer 23 Seed layer 24 Antiferromagnetic layer 25 pinned magnetic layer 25a First pinned magnetic layer 25b non-magnetic intermediate layer 25c Second pinned magnetic layer 26 Nonmagnetic Material Layer 27 Free magnetic layer 27a Second free magnetic layer 27b Non-magnetic intermediate layer 27c First free magnetic layer 28 Protective layer 29 Insulating material layer 30 Bias underlayer 31 hard bias layer 32 insulating layer 33 Upper electrode layer 34 Upper shield layer R1, R2 resist layer T1, T2, T3, T4 multilayer film T1s, T2s, T3s side end face H, H1 through hole

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01F 10/32 H01L 43/12 H01L 43/12 G01R 33/06 RF term (reference) 2G017 AD55 AD56 AD60 AD65 5D034 BA03 BA05 BA08 BA12 BA15 BB08 CA08 DA07 5E049 AA01 AA04 AA07 AC00 AC05 BA16 CB02 DB12 FC01 GC01 HC06

Claims (32)

[Claims] 1. A magnetoresistive effect element, and an upper electrode layer electrically connected to an upper surface of the magnetoresistive effect element and a lower electrode layer electrically connected to a lower surface of the magnetoresistive effect element, In a magnetic detection element that supplies a current in a direction perpendicular to a film surface of the magnetoresistive effect element, the magnetoresistive effect element is formed inside a through hole that vertically penetrates an insulating material layer. Detection element. 2. The magnetic detection element according to claim 1, wherein the insulating material layer is formed of a material that is ground by reactive ion milling. 3. The magnetic sensing element according to claim ₂ , wherein the insulating material layer is formed of SiO ₂ or Ta ₂ O ₅ . 4. The magnetic detecting element according to claim 1, wherein a side surface of the through hole is a vertical surface with respect to an upper surface of the insulating material layer. 5. The magnetic detection element according to claim 1, wherein a side surface of the through hole is an inclined surface with respect to an upper surface of the insulating material layer. 6. The magnetic detecting element according to claim 1, wherein a side end portion of the magnetoresistive effect element is laminated on an upper surface of the insulating material layer. 7. The magnetoresistive effect of the side end portion of the magnetoresistive effect element stacked on the upper surface of the insulating material layer is lower than that of the central end portion of the magnetoresistive effect element located inside the through hole. The magnetic detection element according to claim 6, wherein 8. The magnetoresistive element is a fixed magnetic layer,
The magnetic detection element according to claim 1, comprising a multilayer film having a non-magnetic material layer and a free magnetic layer. 9. The multilayer film has an antiferromagnetic layer in contact with the pinned magnetic layer, and the antiferromagnetic layer, pinned magnetic layer, and
The magnetic detection element according to claim 8, wherein the nonmagnetic material layer and the free magnetic layer are stacked in this order. 10. The multi-layer film has an antiferromagnetic layer in contact with the pinned magnetic layer, and a free magnetic layer, a nonmagnetic material layer, a pinned magnetic layer and an antiferromagnetic layer are stacked in this order from the bottom. The magnetic detection element according to claim 8. 11. A pair of longitudinal bias layers made of a hard magnetic material is provided to face at least a side end surface of the free magnetic layer in the track width direction of the multilayer film. The magnetic detection element described. 12. The magnetic sensor according to claim 8, wherein a pair of longitudinal bias layers made of an antiferromagnetic material or a ferromagnetic material is provided so as to overlap with the free magnetic layer of the multilayer film. element. 13. A longitudinal bias layer made of a hard magnetic material is provided on a surface of the free magnetic layer of the multilayer film opposite to a surface in contact with the non-magnetic material layer, with a separation layer made of a non-magnetic material interposed therebetween. The magnetic detection element according to any one of claims 8 to 10. 14. The magnetic detection element according to claim 8, wherein the insulating material layer has a specular reflection effect. 15. The magnetic sensing element according to claim 1, wherein a lower shield layer is formed below the lower electrode layer, and an upper shield layer is formed above the upper electrode layer. 16. The magnetic detection element according to claim 1, wherein the lower electrode layer and the upper electrode layer are made of a magnetic material. 17. A method of manufacturing a magnetic sensing element, comprising the following steps. (A) a step of forming a lower electrode layer on a substrate and laminating an insulating material layer on the lower electrode layer; and (b) forming a through hole vertically penetrating the insulating material layer, and forming the through hole. A step of exposing the surface of the lower electrode layer inside, and (c) a pinned magnetic layer on the lower electrode layer in the through hole,
Forming a multilayer film having a non-magnetic material layer and a free magnetic layer; and (d) forming a resist layer on the multilayer film and removing the multilayer film not covered by the resist layer, e) a step of removing the resist layer, and (f)
Forming an upper electrode layer electrically connected to an upper surface of the multilayer film. 18. The method of manufacturing a magnetic sensing element according to claim 17, wherein in the step (b), the side surface of the through hole is a surface perpendicular to the upper surface of the insulating material layer. 19. The method of manufacturing a magnetic sensing element according to claim 17, wherein in the step (b), the side surface of the through hole is an inclined surface with respect to the upper surface of the insulating material layer. 20. In the step (b), the through hole is formed by using reactive ion milling.
20. The method for manufacturing a magnetic sensing element according to any one of 1 to 19. 21. The method of manufacturing a magnetic sensing element according to claim 20, wherein in the step (a), the insulating material layer is formed of a material that is ground by reactive ion milling. 22. The method of manufacturing a magnetic sensing element according to claim 21, wherein in the step (a), the insulating material layer is formed of SiO ₂ Ta ₂ O ₅ . 23. In the step (d), the insulating material layer is ground so that an upper surface of a portion of the insulating material layer not covered with the resist layer is located below an upper surface of the free magnetic layer. After that, (g) a pair of longitudinal layers made of a hard magnetic material and facing a side end surface of at least the free magnetic layer of the multilayer film in the track width direction, and applying a magnetic field in the track width direction to the free magnetic layer. The method according to claim 1, further comprising the step of providing a bias layer.
23. The method for manufacturing a magnetic detection element according to any one of 7 to 22. 24. Between the step (d) and the step (g), (h) a step of removing the outer surface of the insulating material layer left unremoved in the step (d) is performed. The method for manufacturing a magnetic detection element according to claim 23, which has. 25. The method of manufacturing a magnetic sensing element according to claim 17, wherein in the step (c), the multilayer film is formed from inside the through hole to the upper surface of the insulating material layer. 26. Between the step (d) and the step (e), (i) a multilayer film left on the upper surface of the insulating material layer without being removed in the step (d). 26. The method for manufacturing a magnetic sensing element according to claim 25, comprising a step of milling a side end surface in the track width direction by milling. 27. In the step (h) or (i), the distance from the center position of the through hole in the track width direction to the side end faces on both sides of the multilayer film, and / or the track width direction of the through hole. 27. The magnetic sensing element according to claim 24 or 26, wherein the side end surface of the multilayer film and / or the outer surface of the insulating material layer is ground so that the distances from the center position to the outer surfaces on both sides of the insulating material layer are equal. Production method. 28. In the step (d), the resist layer is formed on the multilayer film so that the center position in the track width direction of the through hole and the center position in the track width direction of the resist layer overlap each other. 28. A method for manufacturing a magnetic detection element according to any one of 17 to 27. 29. In the step (c), the multilayer film is formed as having an antiferromagnetic layer in contact with the pinned magnetic layer, and from the bottom, an antiferromagnetic layer, a pinned magnetic layer, and a nonmagnetic material layer. 29. The method for manufacturing a magnetic sensing element according to claim 17, wherein the free magnetic layers are laminated in this order. 30. In the step (c), the multilayer film is formed to have an antiferromagnetic layer in contact with the pinned magnetic layer, and from the bottom, a free magnetic layer, a nonmagnetic material layer, a pinned magnetic layer and 29. The method for manufacturing a magnetic sensing element according to claim 17, wherein the antiferromagnetic layers are stacked in this order. 31. In the step (a), a lower shield layer is formed below the lower electrode layer, and after the step (f), an upper shield layer is formed above the upper electrode layer. A method of manufacturing a magnetic detection element according to claim 17. 32. The lower electrode layer in the step (a), the upper electrode layer in the step (f),
The magnetic material is formed of a magnetic material.
0. The method for manufacturing the magnetic sensing element according to any one of 0.