JP2003198043A5 - - Google Patents
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- Publication number
- JP2003198043A5 JP2003198043A5 JP2001390918A JP2001390918A JP2003198043A5 JP 2003198043 A5 JP2003198043 A5 JP 2003198043A5 JP 2001390918 A JP2001390918 A JP 2001390918A JP 2001390918 A JP2001390918 A JP 2001390918A JP 2003198043 A5 JP2003198043 A5 JP 2003198043A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor laser
- laser device
- thickness
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000010410 layer Substances 0.000 claims 24
- 239000004065 semiconductor Substances 0.000 claims 8
- 239000011241 protective layer Substances 0.000 claims 6
- 239000000463 material Substances 0.000 claims 5
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 claims 3
- 238000003776 cleavage reaction Methods 0.000 claims 2
- 239000000470 constituent Substances 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
Claims (6)
前記保護層が少なくとも３層からなり、該保護層の前記積層体側から第１層が構成元素に酸素を含まない材料からなり、第２層が前記材料を母材とする酸化物からなり、第３層が酸化物からなり、前記第１層と前記第２層との合計膜厚をｄ1とし、前記第２層の膜厚をｄ2とすると、前記第１層と第２層との合計膜厚および前記第２層の膜厚が、0.1≦ｄ2/ｄ1≦0.9の関係を満たすことを特徴とする半導体レーザ素子。In a semiconductor laser device having a cleavage plane perpendicular to the light guide direction of the laminate as a resonator surface, and a protective layer provided on at least one of the resonator surfaces,
The protective layer comprises at least three layers, the first layer from the laminate side of the protective layer comprises a material not containing oxygen as a constituent element, the second layer comprises an oxide based on the material, When the three layers are made of oxide, the total film thickness of the first layer and the second layer is d1, and the film thickness of the second layer is d2, the total film of the first layer and the second layer A semiconductor laser device characterized in that the thickness and the thickness of the second layer satisfy a relationship of 0.1≤d2 / d1≤0.9.
前記保護層が少なくとも３層からなり、該保護層の前記積層体側から第１層が構成元素に窒素を含まない材料からなり、第２層が前記材料を母材とする窒化物からなり、第３層が窒化物からなり、前記第１層と前記第２層との合計膜厚をｄ1とし、前記第２層の膜厚をｄ2とすると、前記第１層と第２層との合計膜厚および前記第２層の膜厚が、0.1≦ｄ2/ｄ1≦0.9の関係を満たすことを特徴とする半導体レーザ素子。In a semiconductor laser device having a cleavage plane perpendicular to the light guide direction of the laminate as a resonator surface, and a protective layer provided on at least one of the resonator surfaces,
The protective layer comprises at least three layers, the first layer from the laminate side of the protective layer comprises a material that does not contain nitrogen as a constituent element, the second layer comprises a nitride having the material as a base material, When the three layers are made of nitride, the total film thickness of the first layer and the second layer is d1, and the film thickness of the second layer is d2, the total film of the first layer and the second layer A semiconductor laser device characterized in that the thickness and the thickness of the second layer satisfy a relationship of 0.1≤d2 / d1≤0.9.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001390918A JP4236840B2 (en) | 2001-12-25 | 2001-12-25 | Semiconductor laser element |
| US10/322,599 US7065117B2 (en) | 2001-12-25 | 2002-12-19 | Semiconductor laser element having end-facet protection layer which includes unoxidized or unnitrided first sublayer formed on end facet and second sublayer produced by oxidizing or nitriding the surface of the first sublayer |
| US11/408,932 US20060193360A1 (en) | 2001-12-25 | 2006-04-24 | Semiconductor laser element having end-facet protection layer which includes unoxidized or unnitrided first sublayer formed on end facet and second sublayer produced by oxidizing or nitriding the surface of the first sublayer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001390918A JP4236840B2 (en) | 2001-12-25 | 2001-12-25 | Semiconductor laser element |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003198043A JP2003198043A (en) | 2003-07-11 |
| JP2003198043A5 true JP2003198043A5 (en) | 2005-02-10 |
| JP4236840B2 JP4236840B2 (en) | 2009-03-11 |
Family
ID=19188461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001390918A Expired - Fee Related JP4236840B2 (en) | 2001-12-25 | 2001-12-25 | Semiconductor laser element |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US7065117B2 (en) |
| JP (1) | JP4236840B2 (en) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005072488A (en) * | 2003-08-27 | 2005-03-17 | Mitsubishi Electric Corp | Semiconductor laser |
| EP1886388B1 (en) * | 2005-06-01 | 2015-03-18 | Binoptics Corporation | Spatial filters |
| JP5285835B2 (en) * | 2005-07-13 | 2013-09-11 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
| JP5191650B2 (en) * | 2005-12-16 | 2013-05-08 | シャープ株式会社 | Nitride semiconductor light emitting device and method for manufacturing nitride semiconductor light emitting device |
| JP5430826B2 (en) * | 2006-03-08 | 2014-03-05 | シャープ株式会社 | Nitride semiconductor laser device |
| GB2439973A (en) * | 2006-07-13 | 2008-01-16 | Sharp Kk | Modifying the optical properties of a nitride optoelectronic device |
| US7646798B2 (en) * | 2006-12-28 | 2010-01-12 | Nichia Corporation | Nitride semiconductor laser element |
| JP2010073757A (en) * | 2008-09-16 | 2010-04-02 | Furukawa Electric Co Ltd:The | Method of manufacturing semiconductor laser device, and semiconductor laser device |
| US9343871B1 (en) * | 2012-04-05 | 2016-05-17 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
| US10559939B1 (en) | 2012-04-05 | 2020-02-11 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
| US8948222B1 (en) | 2013-09-30 | 2015-02-03 | Jds Uniphase Corporation | Laser diode light source |
| CN106033866B (en) * | 2015-03-20 | 2019-12-03 | 云晖科技有限公司 | Vertical cavity surface emitting laser |
| US10340415B2 (en) * | 2016-09-01 | 2019-07-02 | Lg Innotek Co., Ltd. | Semiconductor device and semiconductor device package including the same |
| WO2018048275A1 (en) | 2016-09-10 | 2018-03-15 | 엘지이노텍 주식회사 | Semiconductor device |
| CN115566116A (en) | 2016-09-13 | 2023-01-03 | 苏州立琻半导体有限公司 | Semiconductor device and semiconductor device package including the same |
| US10903395B2 (en) | 2016-11-24 | 2021-01-26 | Lg Innotek Co., Ltd. | Semiconductor device having varying concentrations of aluminum |
| DE102017112610A1 (en) | 2017-06-08 | 2018-12-13 | Osram Opto Semiconductors Gmbh | Edge-emitting semiconductor laser and operating method for such a semiconductor laser |
| US10505332B1 (en) | 2018-06-04 | 2019-12-10 | Ii-Vi Delaware, Inc. | Ex-situ conditioning of laser facets and passivated devices formed using the same |
| US10714900B2 (en) | 2018-06-04 | 2020-07-14 | Ii-Vi Delaware, Inc. | Ex-situ conditioning of laser facets and passivated devices formed using the same |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6033320B2 (en) * | 1978-03-24 | 1985-08-02 | 日本電気株式会社 | Semiconductor laser and its manufacturing method |
| US4563368A (en) * | 1983-02-14 | 1986-01-07 | Xerox Corporation | Passivation for surfaces and interfaces of semiconductor laser facets or the like |
| US4656638A (en) | 1983-02-14 | 1987-04-07 | Xerox Corporation | Passivation for surfaces and interfaces of semiconductor laser facets or the like |
| JPH0447979Y2 (en) * | 1986-01-20 | 1992-11-12 | ||
| DE68915763T2 (en) * | 1989-09-07 | 1994-12-08 | Ibm | Process for mirror passivation in semiconductor laser diodes. |
| US5144634A (en) | 1989-09-07 | 1992-09-01 | International Business Machines Corporation | Method for mirror passivation of semiconductor laser diodes |
| JPH0766500A (en) * | 1993-08-27 | 1995-03-10 | Toshiba Corp | Formation of optical thin film |
| EP0792531A1 (en) * | 1995-09-14 | 1997-09-03 | Koninklijke Philips Electronics N.V. | Semiconductor diode laser and method of manufacturing same |
| JPH09162496A (en) * | 1995-12-12 | 1997-06-20 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser and its manufacture |
| JP3710627B2 (en) * | 1997-08-13 | 2005-10-26 | 三菱化学株式会社 | Compound semiconductor light emitting device |
| EP0898345A3 (en) | 1997-08-13 | 2004-01-02 | Mitsubishi Chemical Corporation | Compound semiconductor light emitting device and method of fabricating the same |
| JP3196831B2 (en) * | 1998-04-20 | 2001-08-06 | 日本電気株式会社 | Method for manufacturing semiconductor laser device |
| JP3699851B2 (en) * | 1998-05-11 | 2005-09-28 | 三菱化学株式会社 | Manufacturing method of semiconductor light emitting device |
| JP3699840B2 (en) * | 1998-12-04 | 2005-09-28 | 三菱化学株式会社 | Compound semiconductor light emitting device |
| JP3699842B2 (en) * | 1998-12-04 | 2005-09-28 | 三菱化学株式会社 | Compound semiconductor light emitting device |
| JP3814432B2 (en) * | 1998-12-04 | 2006-08-30 | 三菱化学株式会社 | Compound semiconductor light emitting device |
| JP2001230483A (en) | 2000-02-14 | 2001-08-24 | Fuji Photo Film Co Ltd | Semiconductor laser device |
| JP3887174B2 (en) * | 2001-01-24 | 2007-02-28 | 日本オプネクスト株式会社 | Semiconductor light emitting device |
| US6975661B2 (en) * | 2001-06-14 | 2005-12-13 | Finisar Corporation | Method and apparatus for producing VCSELS with dielectric mirrors and self-aligned gain guide |
| US6812152B2 (en) * | 2001-08-09 | 2004-11-02 | Comlase Ab | Method to obtain contamination free laser mirrors and passivation of these |
-
2001
- 2001-12-25 JP JP2001390918A patent/JP4236840B2/en not_active Expired - Fee Related
-
2002
- 2002-12-19 US US10/322,599 patent/US7065117B2/en not_active Expired - Lifetime
-
2006
- 2006-04-24 US US11/408,932 patent/US20060193360A1/en not_active Abandoned
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