JP2003185832A - Particulate structure and method of making particulate structure - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a particulate structure having desired characteristics by controlling the direction and the plane direction of the particulate structure in the substrate plane and forming the particulate structure having a face centered cubic structure except for the (111) orientation. <P>SOLUTION: A pattern 102a is formed by processing the surface of a crystalline substrate 101. The pattern 102a includes a plane 103a having the tangible crystallographic direction of (111). By depositing fine particles in the region of the plane 103a, the obtained particulate structure has the crystalline form of a face centered cubic opal crystal. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a fine particle structure constituting a photonic crystal and a method for producing the fine particle structure.

[0002]

2. Description of the Related Art In recent years, an energy region of light (photonic bandgap) that is not propagated at all by combining substances having different refractive indexes with a cycle of about the wavelength of light
Have been developed. Such a fine particle structure is also called a photonic crystal and has attracted attention as a material applicable to optical devices and electromagnetic wave filters. In addition, it is known that opal is a kind of photonic crystal in the natural world, and a fine particle structure in which fine particles are highly regularly arranged to form a crystal structure is also called an opal crystal.

As a conventional method of forming a fine particle structure, there is a method called a lateral deposition method and a method called a vertical deposition method. The lateral deposition method two-dimensionally grows a fine particle film along the surface of a substrate, and is suitable for arranging one to several particle layers on the substrate. In addition, the vertical deposition method uses the substrate 1 as shown in FIGS.
The fine particle structure 173 is obtained by allowing 72 to stand still in the fine particle dispersion 171 and allowing the fine particles 174 in the dispersion to settle and deposit on the substrate 172. The vertical deposition method can produce the fine particle structure 173 having a larger film thickness than the horizontal deposition method.

[0004]

However, both of the lateral deposition method and the vertical deposition method described above utilize the phenomenon that the particles are about to be packed most closely to produce the particle structure. Therefore, the crystal form of the fine particle structure is face-centered cubic. Further, in the vertical deposition method, since the fine particles tend to have a two-dimensional close-packed structure on the substrate, a fine particle structure other than the normal (111) orientation cannot be obtained ((111) oriented fine particles). In some cases, the hexagonal close-packed structure domains and other faces of face-centered cubic crystals may become domains in the structure, but such a state is caused by defects created during crystal growth of fine particles. is there).

In general, a photonic crystal has characteristics depending on the crystal orientation. However, the horizontal deposition method and the vertical deposition method cannot control the crystallographic orientation of the formed fine particle structure when the fine particles aggregate in the plane of the substrate whose directionality is not determined. There is a defect.

Here, the reason why a fine particle structure other than the (111) orientation cannot be obtained and the reason why the crystallographic orientation in the plane of the substrate cannot be controlled will be described by taking the vertical deposition method as an example. In the vertical deposition method shown in FIG. 17, the substrate 172 is left standing on the bottom of a container 175 containing the dispersion liquid 171. Dispersion 171
Is a dispersion of spherical fine particles 174 and an organic solvent in water (FIG. 17A). The fine particles 174 gradually settle in the dispersion liquid 171, and form a regular structure (crystal structure) by mutual repulsive force during deposition (FIG. 17B).

At this time, the fine particles 174 are dispersed in the dispersion liquid 171.
A two-dimensional close-packed structure is formed on the surface of the substrate 172 that defines the boundary condition at. FIG. 18 is a diagram showing a two-dimensional close-packed structure, in which (a) and (b) are top views of the two-dimensional close-packed structure, and (c) is a perspective view. When the close-packed structure is adopted in the state where the in-plane orientation is not determined, the fine particles can be in any of the states shown in (a) and (b), for example. Further, in some cases, the substrate 172
A close-packed structure having different directions is formed at a plurality of upper positions to form a multi-domain. FIG. 19 shows a state in which domains A and B having different directions are formed on the same surface.

It is known that the close-packed structure of fine particles formed on a plane has the same grain arrangement as that of the (111) plane of face-centered cubic crystal. Then, since the fine particles of the second and subsequent layers are piled up on the fine particle film of the first layer made of the (111) plane, the (111) plane (also 2001 in the figure
1) plane), and the ordered structure (crystal structure) formed by the fine particles becomes a (111) oriented face-centered cubic structure. A face-centered cubic structure with (111) orientation is shown in FIG. The ordered structure of FIG. 20 is obtained after the dispersion liquid 171 is evaporated.

The present invention has been made to solve the above-mentioned problems, and controls the direction and the plane orientation of the fine particle structure in the plane of the substrate to form a face-centered cubic structure other than the (111) orientation. An object of the present invention is to provide a fine particle structure that can obtain desired characteristics by forming the fine particle structure and a method for producing the fine particle structure.

[0010]

[Means for Solving the Problems] In order to solve the above problems,
In order to achieve the object, the fine particle structure according to the invention of claim 1 is formed in a region including a plane having a crystallographic orientation (111) which is revealed by processing a surface of a crystalline substrate. It is characterized by having a face-centered cubic opal crystal form.

According to the first aspect of the invention, the surface on which the opal crystal is formed can be oriented by processing the surface of the crystalline substrate to reveal the surface. Further, an opal crystal can be formed on a surface that is in contact with a region including the (111) plane.

A fine particle structure according to a second aspect of the present invention is formed in contact with a region including a plane having a crystallographic orientation (111) which is revealed by processing a surface of a crystalline substrate. , Has a crystal form of a face-centered cubic inverse opal crystal.

According to the second aspect of the present invention, by processing the surface of the crystalline substrate to reveal the surface, the surface on which the inverse opal crystal is formed can be oriented. In addition, an inverse opal crystal can be formed on a surface that is in contact with a region including the (111) plane.

A fine particle structure according to a third aspect of the present invention is formed on a region including a (111) plane of a (100) oriented crystalline substrate and has a crystal form of (100) oriented opal crystal or (100). ) It has a crystal form of an inverted opal crystal with an orientation.

According to the invention of claim 3, (1
A crystal form of (100) -oriented opal crystal or (10) on a region including a (111) plane of a (00) -oriented crystalline substrate.
It is possible to form a fine particle structure having a crystal form of 0) oriented inverse opal crystals.

A fine particle structure according to a fourth aspect of the present invention is formed on a region including a (111) plane of a (110) oriented crystalline substrate, and has a crystal form of an (110) oriented opal crystal or ( It is characterized by having a crystal form of an inverted opal crystal having a 110) orientation.

According to the invention of claim 4, (1
10) A crystalline form of (110) -oriented opal crystals or (11) on the region including the (111) plane of the oriented crystalline substrate.
It is possible to form a fine particle structure having a crystal form of 0) oriented inverse opal crystals.

A fine particle structure according to a fifth aspect of the present invention is characterized in that the substrate is a silicon substrate.

According to the invention of claim 5, a silicon substrate can be used for the fine particle structure according to any one of claims 1 to 4.

A fine particle structure according to a sixth aspect of the present invention is characterized in that the substrate is an SOI (silicon on insulator) substrate.

According to the invention of claim 6, the fine particle structure according to any one of claims 1 to 4 has S.
An OI (silicon on insulator) substrate can be used.

In the fine particle structure according to the invention of claim 7, the (111) plane which has been revealed by processing the non-crystalline layer and the surface of the (111) -oriented crystalline layer which constitutes the substrate together with the non-crystalline layer is processed. Formed in contact with a region including (111)
It is characterized by having a crystal form of an oriented opal crystal or a crystal form of an (111) oriented inverse opal crystal.

According to the seventh aspect of the invention, the surface of the (111) -oriented crystal layer forming the substrate together with the non-crystalline layer is processed to reveal the region including the (111) plane, thereby crystallizing the crystal. The crystal form of (111) -oriented opal crystals or (11
1) It is possible to form a fine particle structure having a crystal form of oriented inverse opal crystals.

According to the eighth aspect of the present invention, there is provided a method for producing a fine particle structure, wherein a crystalline substrate surface is processed (11
1) a surface revealing step for revealing a surface, and a deposition step for developing a fine particle dispersion on the revealed (111) surface and depositing fine particles in the fine particle dispersion on the (111) surface, And a crystallization step of removing the solvent of the fine particle dispersion liquid from the deposited fine particles and drying the deposited fine particles to make the deposited fine particles into opal crystals.

According to the eighth aspect of the present invention, the crystalline substrate is processed to reveal the (111) plane, and the fine particles in the fine particle dispersion are deposited on the exposed (111) plane. Further, the deposited fine particles can be made into opal crystals by drying the deposited fine particles.

According to a ninth aspect of the present invention, there is provided a method for producing a fine particle structure, wherein a crystalline substrate surface is processed (11
1) a surface revealing step for revealing a surface, and a deposition step for developing a fine particle dispersion on the revealed (111) surface and depositing fine particles in the fine particle dispersion on the (111) surface, A crystallization step of removing the solvent of the fine particle dispersion liquid from the deposited fine particles and drying the deposited fine particles to form the fine particles deposited as opal crystals, and fine particles between the fine particles forming the opal crystals. A different substance filling step of filling a substance of a different material with, and an inverse opal crystallization step of removing the fine particles from the opal crystal filled with a substance of a different material to make the opal crystal an inverse opal crystal. It is characterized by including.

According to the ninth aspect of the invention, the crystalline substrate is processed to reveal the (111) plane, and the fine particles in the fine particle dispersion are deposited on the revealed (111) plane. . The fine particles deposited by drying the deposited fine particles are opal crystals. Furthermore, the opal crystal can be made into an inverse opal crystal by filling a substance of a material different from the fine particles between the fine particles of the opal crystal and removing the fine particles from the opal crystal.

According to a tenth aspect of the present invention, in the method for producing a fine particle structure, the substrate comprises an amorphous layer and a (111) -oriented crystal layer that constitutes the substrate together with the amorphous layer. However, by processing the surface of the crystal layer (11
1) It is characterized in that a region including a surface is exposed.

According to the tenth aspect of the invention, the surface of the (111) -oriented crystal layer forming the substrate is processed together with the amorphous layer of the eighth or ninth aspect to process (1
11) The area including the surface is made visible, and
1) The opal crystals can be formed by depositing fine particles in the fine particle dispersion on the surface. Also, an inverse opal crystal can be formed using this opal crystal.

[0030]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments 1 to 4, which are preferred embodiments of a fine particle structure and a method for producing a fine particle structure according to the present invention, will be described in detail below with reference to the accompanying drawings. .

(Embodiment 1) FIGS. 1 and 2 are views for explaining a method for producing a fine particle structure according to Embodiment 1, FIG. 1 is a perspective view, and FIG. 2 is shown in FIG. Line segment 2-
It is sectional drawing which follows 2 '. In addition, in FIG. 1 and FIG.
The drawings in which the letters (a), (b), ... Are the same indicate the same manufacturing process. In the description of FIGS. 1 and 2, the characters (a), (b) ...
2 (a), (b), ... And FIG. 2 (a), (b).

The fine particle structure of the first embodiment is (10
It is formed by using the Si substrate 101 of 0) orientation (a).
The Si substrate 101 has, for example, thermal CVD (Chemical Vapor).
An oxide film (SiO ₂ film) 102 is formed by Deposition. A circular pattern 102a is formed on the SiO ₂ film 102 by a normal photolithography technique using a resist mask (not shown) (b). At this time, the surface of the substrate 101 is exposed at the bottom of the circular pattern 102a.

Next, the substrate 101 is anisotropically etched using the SiO ₂ film 102 having the pattern 102a as a mask. This etching is performed using potassium hydroxide (KOH) as an etching solution, for example. The etching rate of the (111) surface of the substrate 101 by KOH is (10
0) slower than plane. Therefore, the substrate 101 is etched in a portion whose shape is determined according to the orientation of the substrate and the pattern of the mask, and a pattern including the (111) plane is formed.

In the first embodiment, the portion to be etched has a shape such that a square pyramid whose bottom surface is substantially square is arranged with its apex facing down. Then, a pattern 103, which is a concave portion corresponding to the etched portion, is formed on the surface of the substrate 101. Surface 103a of pattern 103
Is a (111) plane (c). After etching the substrate 101, the mask of the SiO ₂ film 102 is removed to obtain the substrate 101 in which the (111) plane is exposed (d).

FIG. 3 is a diagram for explaining the deposition of the fine particles 301 on the surface 103a formed by the steps described above. The fine particles 301 are deposited not only on the surface 103a but also on the surface (100) surface 103b left by etching. (11 on the surface 103b
1) In order to prevent the fine particles 301 from forming a close-packed structure having the same arrangement as the surface, it is desirable to use a condition for etching the substrate 101 so that the area where the surface 103b remains is as small as possible. Further, a certain amount of area is required for the fine particles 301 to form the close-packed structure. For this reason, it is desirable to use a condition for the etching of the substrate 101 that can secure the area of the surface 103a to the extent that the closest packing structure can be formed. Etching conditions, pattern 102a
The size and pitch of the are determined by the particle size of the deposited fine particles 301.

FIGS. 4A to 4C are views for explaining the deposition of the fine particles 301 on the substrate 101 on which the pattern 103 is formed. In the first embodiment, the substrate 101 on which the pattern 301 is formed is left to stand in the container 403 containing the dispersion liquid 401 (a). The fine particles 301 settle and deposit on the substrate 101 over time (b),
(C). The deposition conditions of the fine particles according to the first embodiment are as follows. Particle size of fine particles: 300 nm Dispersion medium: Fine particle concentration of pure water dispersion liquid: 40 wt%

As a result of depositing fine particles on the substrate 101 formed by the steps shown in FIGS. 1 and 2 under the above-mentioned conditions, the fine particle structure 501 of (100) -oriented silica shown in FIG. 5 is obtained. The fine particle structure 501 is an opal crystal, and the plane indicated by 501a is the (100) plane.

According to the first embodiment described above, by processing (etching or the like) the surface of the crystalline substrate to reveal the surface, it is possible to give direction to the exposed surface. Further, it is possible to provide a fine particle structure having a face-centered cubic structure with an arbitrary orientation by revealing a crystallographically defined surface and depositing fine particles on this surface. Particularly, in the first embodiment, it is possible to provide a fine particle structure which is a (100) -oriented opal crystal by depositing and depositing fine particles on a region including a (111) plane of a (100) -oriented crystalline substrate. .

The present invention is not limited to the first embodiment, and in addition to the silicon substrate, an epitaxial wafer or an SOI substrate having a crystalline material formed on an amorphous substrate may be used. Furthermore, the pattern when etching the substrate to expose the (111) plane is the same as in the first embodiment.
The pattern is not limited to the pattern described in (10).
0) enough to form opal crystals on the substrate (11
1) Any pattern can be used as long as the surface can be secured.

(Second Embodiment) Next, a second embodiment of the present invention will be described. 6 and 7 show the second embodiment.
FIG. 6 is a diagram for explaining a method of creating the fine particle structure of
FIG. 6 is a perspective view, and FIG. 7 is a sectional view taken along the line segment 7-7 ′ shown in FIG. 6A, 6B, 7A, 7B, 7A, 7B, 7A, 7B, 7A, 7B, 7C, 7D, 7E, 7B, 7C, 7D, 7E, 7F, 7G, 7F, 7D, 7E, 7D, 7E, 7F, 7G, 7F, 7D, 7E, 7F, 7F, 7D, 7E, 7F, 7F, 7I, 7D, 7F, 7F, 7D, 7F, 7D, 7F, 7D, and 7D, respectively. In the description of FIGS. 6 and 7,
Characters such as (a), (b) ... Indicate (a), (b) ... In FIG. 6 and (a), (b).

The fine particle structure of the second embodiment is (11
It is formed using a 0) oriented Si substrate 601 (a).
The Si substrate 601 has, for example, thermal CVD (Chemical Vapor).
An oxide film (SiO ₂ film) 102 is formed by Deposition. A circular pattern 102a is formed on the SiO ₂ film 102 by a normal photolithography technique using a resist mask (not shown) (b). At this time, the surface of the substrate 601 is exposed at the bottom of the circular pattern 102a.

Next, the substrate 601 is anisotropically etched using the SiO ₂ film 102 having the pattern 102a as a mask. This etching is performed using potassium hydroxide (KOH) as an etching solution, for example. When the (110) plane of the substrate 601 is etched by KOH, a portion whose shape is determined according to the orientation of the substrate 601 and the pattern of the mask is etched, and a pattern including the (111) plane is formed.

In the second embodiment, the portion to be etched has the shape of a triangular prism arranged with the vertexes of the triangles on the bottom surface and the upper surface facing downward, and the surface of the substrate 601 has a concave portion having a shape corresponding to the triangular prism. A pattern 603 is formed.
Bottom (or top) of the triangular prism etched in the figure
The surface of the pattern 603 corresponding to is shown as a surface 603b, and the surface corresponding to the side surface is shown as a surface 603a (c).
8 is a diagram showing a line segment 9-9 'orthogonal to the line segment 7-7' shown in FIG. 6, and FIG. 9 is a substrate 60 shown in FIG.
It is a figure for demonstrating the cross section which follows the line segment 9-9 'orthogonal to the line segment 7-7' of 1.

As shown in FIGS. 7 and 9, the plane 601b is a (111) plane perpendicular to the surface of the substrate 601, and the plane 601a is a (111) plane oblique to the surface of the substrate 601.
The surface. After etching the substrate 601, the SiO ₂ film 1
By removing the mask of 02, the substrate 601 in which the (111) plane is exposed is obtained (d).

10A to 10C show a pattern 603.
It is a figure for demonstrating depositing the fine particle 301 on the board | substrate 601 in which was formed. In the second embodiment, the substrate 60 on which the pattern 603 is formed is the same as in the first embodiment.
1 is left to stand in a container 403 containing the dispersion liquid 401 (a). The fine particles 301 are formed on the substrate 601 over time.
Settles and deposits on top (b), (c). The deposition conditions of the fine particles according to the second embodiment are as follows. Particle size of fine particles: 300 nm Dispersion medium: Fine particle concentration of pure water dispersion liquid: 40 wt%

As a result of depositing fine particles on the substrate 601 formed by the steps shown in FIGS. 6 and 7 under the above conditions, the (110) oriented silica fine particle structure 1101 shown in FIG. 11 is obtained. The fine particle structure 1101 is an opal crystal, and the plane indicated by 1101a is the (110) plane.

According to the second embodiment described above, by processing (etching or the like) the surface of the crystalline substrate to reveal the surface, it is possible to give direction to the exposed surface. Further, in particular, in the second embodiment, a fine particle structure which is a (110) -oriented opal crystal is provided by depositing and depositing fine particles on a region including a (111) plane of a (110) -oriented crystalline substrate. You can

The present invention is not limited to the second embodiment, and in addition to the silicon substrate, an epitaxial wafer or an SOI substrate in which a crystalline material is formed on an amorphous substrate may be used. Further, the pattern when etching the substrate to expose the (111) plane is the same as in the second embodiment.
The pattern is not limited to the pattern described in (11).
0) enough to form opal crystals on the substrate (11
1) Any pattern can be used as long as the surface can be secured.

(Third Embodiment) Next, a third embodiment of the present invention will be described. 12 and 13 are views for explaining the method for producing the fine particle structure according to the third embodiment. FIG. 12 is a perspective view, and FIG. 13 is taken along the line segment 13-13 ′ shown in FIG. FIG. Note that FIG. 12 and FIG.
In FIG. 3, the drawings in which the letters (a), (b), ... Are the same indicate the same creation process. In the description of FIGS. 12 and 13, the letters (a), (b) ... Indicate all of (a), (b) ... In FIG. 12 and (a), (b). ing.

The fine particle structure of the third embodiment has (11
1) Oriented SOI (Silicon On Insulator) substrate 120
Created using 1. The SOI substrate 1201 is SiO
₂ layers 1201b and Si layer 1201a
The thickness of 201a is preferably about the particle size of fine particles deposited in a later step (a).

The SOI substrate 1201 is formed, for example, by thermal CVD.
(Chemical Vapor Deposition)
An O ₂ film) 102 is formed. A circular pattern 102a is formed on the SiO ₂ film 102 by a normal photolithography technique using a resist mask (not shown) (b). At this time, at the bottom of the circular pattern 102a,
The surface of the Si layer 1201a of the SOI substrate 1201 is exposed (b).

Next, the SOI substrate 1201 is patterned 1
The SiO ₂ film 102 on which 02a is formed is used as a mask for anisotropic etching. In this etching, for example, potassium hydroxide (KOH) is used as an etching solution, and the Si layer 120 is used.
This is continued even after the exposed subsurface portion of 1a is completely etched. As a result, KOH enters under the masking portion of the SiO ₂ film, and the Si layer 1201a
To etch. The shape of the etched portion is S
It is determined according to the orientation of the i layer 1201a and the pattern of the mask (c).

In the third embodiment, the etched portion has a substantially hexagonal shape when the surface of the Si layer 1201a is viewed from above, and the surface of the SOI substrate 1201 has a shape corresponding to the hexagon. A pattern 1203 which is a concave portion is formed. At this time, the plurality of patterns 1203 formed on the SOI substrate 1201 are aligned in a certain direction according to the crystallinity of the Si layer 1203b. In the pattern 1203, the surface 1203a that defines the periphery of the hexagon is the (111) surface, and the bottom surface 1203b is SiO ₂ (d).

During the above etching, the Si layer 1
Due to the difference in etching rate between 201a and the SiO ₂ layer 1201b, the etching of the SiO ₂ layer 1201b does not proceed even while the Si layer 1201a under the SiO ₂ layer mask is being etched. Therefore, in the third embodiment, the bottom area and depth of the hexagonal pattern 1203 can be arbitrarily set depending on the etching rate and the thickness of the Si layer 1201a.

14A to 14C show a pattern 120.
FIG. 6 is a diagram for explaining that fine particles 301 are deposited on the SOI substrate 1201 on which No. 3 is formed. In the third embodiment, the pattern 1 is the same as in the first and second embodiments.
The SOI substrate 1201 on which 203 is formed is dispersed 401
Let it stand in a container 403 containing (a). Particle 301
Will settle and deposit on the substrate 1201 over time (b) and (c). The deposition conditions of the fine particles in the third embodiment are
It is as follows. Particle size of fine particles: 300 nm Dispersion medium: Fine particle concentration of pure water dispersion liquid: 40 wt%

As a result of depositing fine particles on the SOI substrate 1201 formed by the steps shown in FIGS. 12 and 13 under the above conditions, the (111) oriented silica fine particle structure shown in FIG. 15 is obtained. The fine particle structure 1501 is an opal crystal, and the plane indicated by 1501a is (111).
The surface.

According to the third embodiment described above, by processing (etching) the surface of the crystalline layer to reveal the surface, it is possible to give direction to the exposed surface. Particularly, in the third embodiment, Si of the SOI substrate 1201 is
The layer 1201a is etched to form a wall surface of the (111) plane to direct the deposition of fine particles, and the SiO ₂ layer 120
By depositing and depositing fine particles on the 1b surface (11
1) It is possible to provide a fine particle structure which is an oriented opal crystal.

(Fourth Embodiment) Next, a fourth embodiment of the present invention will be described. 16 (a) to 16 (c) are diagrams for explaining the method for producing the fine particle structure according to the fourth embodiment. The fine particle structure of the fourth embodiment is the same as that of the first embodiment.
The fine particle structure 501 is composed of the fine particles 301 of (100) oriented silica described above. The fine particle structure 501 is left to stand in the polymer solution 1601 in the container 403, and the fine particle 301 is infiltrated with the polymer solution 1601 (a).

Next, in the fourth embodiment, the fine particle structure 5 is used.
The polymer solution 1601 infiltrated with 01 is solidified to become a polymer resin 1602 (b). Further, by removing the silica fine particles 301 with hydrofluoric acid, the fine particles 301
Are replaced by air 1604 to form a fine particle structure 1603 of (100) oriented polymer resin 1602 (c). It should be noted that a material obtained by filling different particles (polymer resin) between the fine particles of the fine particle structure 501 forming the opal crystals and removing the fine particles is also referred to as an inverted opal crystal.

According to the fourth embodiment, it is possible to provide an inverse opal crystal having a fine particle structure having a face-centered cubic structure with an arbitrary orientation. Particularly in the fourth embodiment,
(1) formed by depositing and depositing fine particles on a region including a (111) plane of a (100) oriented crystalline substrate.
Since the opal crystal with the (00) orientation was used, an inverted opal crystal with the (100) orientation could be provided.

The present invention is not limited to the production of an inverse opal crystal by using the fine particle structure of the first embodiment as described above, and it is formed in any of the second to third embodiments. It may be made using opal crystals. Further, the present invention is not limited to what is filled with the polymer resin as in the fourth embodiment,
For example, fine particles smaller than the fine particles may be filled. Also, regarding the filling method, CV
The space between the fine particles may be filled using the characteristics of D, sol, or gel.

[0062]

As described above, according to the invention described in claim 1, the fine particle structure of opal crystals having a face-centered cubic structure other than the (111) orientation is formed (1
11) There is an effect that it is possible to provide a fine particle structure capable of obtaining the characteristics of an opal crystal other than the orientation.

According to the second aspect of the present invention, the characteristics of the inverse opal crystal other than the (111) orientation can be obtained by forming the fine particle structure of the inverse opal crystal having the face-centered cubic structure other than the (111) orientation. An effect that a fine particle structure can be provided is exhibited.

According to a third aspect of the present invention, an opal crystal or an inverse opal crystal is formed on a region including a (111) plane of a (100) oriented crystalline substrate (10).
It is possible to provide a fine particle structure having the characteristics of the crystal form of 0) oriented opal crystals or the crystal form of (100) oriented inverse opal crystals.

According to a fourth aspect of the present invention, an opal crystal or an inverse opal crystal is formed on a region including a (111) plane of a (110) oriented crystalline substrate (11).
It is possible to provide a fine particle structure having the characteristics of the crystal form of 0) oriented opal crystals or the crystal form of (110) oriented inverse opal crystals.

The invention according to claim 5 provides the fine particle structure according to any one of claims 1 to 4 using a silicon substrate which is relatively inexpensive, yet has high quality and is easily available. Therefore, there is an effect that a high-quality fine particle structure can be easily provided at low cost.

The invention according to claim 6 can utilize the crystallographic properties of the SOI substrate in the fine particle structure according to any one of claims 1 to 4, and the degree of freedom in designing the fine particle structure can be improved. The effect of increasing the.

The invention according to claim 7 enhances the degree of freedom in processing the surface of the crystal layer by utilizing the difference in processing speed between the crystalline layer and the non-crystalline layer, and provides a fine particle structure having a high degree of freedom in design. There is an effect that can be done.

The invention according to claim 8 is a fine particle structure in which the characteristics of opal crystals other than the (111) orientation are obtained by forming a fine particle structure of an opal crystal having a face-centered cubic structure other than the (111) orientation. An effect that a method of creating a body can be provided.

According to the ninth aspect of the present invention, the characteristics of the inverse opal crystal other than the (111) orientation can be obtained by forming the fine grain structure of the inverse opal crystal having the face-centered cubic structure other than the (111) orientation. It is possible to provide a method for producing a fine particle structure.

According to the tenth aspect of the present invention, by utilizing the difference in processing speed between the crystalline layer and the non-crystalline layer, the degree of freedom in processing the surface of the crystalline layer is increased, and a fine particle structure having a high degree of freedom in design is produced. There is an effect that a method can be provided.

[Brief description of drawings]

FIG. 1 is a diagram for explaining a method for producing a fine particle structure according to a first embodiment of the present invention.

FIG. 2 is another diagram for explaining the method for producing the fine particle structure according to the first embodiment.

FIG. 3 is a diagram for explaining that fine particles are deposited in the first embodiment.

FIG. 4 is a diagram for explaining deposition of fine particles according to the first embodiment.

FIG. 5 is a diagram for explaining the fine particle structure according to the first embodiment.

FIG. 6 is a diagram for explaining a method of producing a fine particle structure according to the second embodiment.

FIG. 7 is another diagram for explaining the method for producing the fine particle structure according to the second embodiment.

FIG. 8 is a line segment 9- orthogonal to the line segment 7-7 ′ shown in FIG.
It is a figure for demonstrating 9 '.

9 is a cross-sectional view taken along the line 9-9 ′ shown in FIG.

FIG. 10 is a diagram for explaining deposition of fine particles according to the second embodiment.

FIG. 11 is a diagram for explaining the fine particle structure according to the second embodiment.

FIG. 12 is a diagram for explaining a method of producing a fine particle structure according to the third embodiment.

FIG. 13 is another diagram for explaining the method for producing the fine particle structure according to the third embodiment.

FIG. 14 is a diagram for explaining deposition of fine particles according to the third embodiment.

FIG. 15 is a diagram for explaining the fine particle structure according to the third embodiment.

FIG. 16 is a diagram for explaining the method of producing the fine particle structure according to the fourth embodiment.

FIG. 17 is a diagram for explaining a conventional vertical deposition method.

FIG. 18 is a diagram showing a two-dimensional close-packed structure of fine particles.

FIG. 19 is a diagram for explaining a multi-domain.

FIG. 20 is a diagram for explaining a fine particle structure having a (111) -oriented face-centered cubic structure.

[Explanation of symbols]

101,601 Substrate 102a, 103, 603, 1203 Pattern 102 SiO ₂ film 301 Fine particle 401 Dispersion 403 Container 501, 1101, 1501 Fine particle structure 1201 SOI substrate 1601 Polymer solution 1602 Polymer resin

Claims (10)

[Claims] 1. A crystal form of a face-centered cubic opal crystal which is formed in a region including a plane whose crystallographic orientation is (111) which is revealed by processing a crystalline substrate surface. A fine particle structure characterized by: 2. A crystal form of a face-centered cubic inverse opal crystal formed in contact with a region including a plane having a crystallographic orientation (111) which is revealed by processing a crystalline substrate surface. A fine particle structure characterized by having. 3. (11) of a (100) oriented crystalline substrate
1) A fine particle structure which is formed on a region including a face and has a crystal form of an opal crystal having a (100) orientation or a crystal form of an inverse opal crystal having a (100) orientation. 4. A (110) oriented crystalline substrate (11
1) A fine particle structure which is formed on a region including a plane and has a crystal form of an (110) -oriented opal crystal or a (110) -oriented inverted opal crystal. 5. The fine particle structure according to claim 1, wherein the substrate is a silicon substrate. 6. The substrate is SOI (Silicon On Insulat)
or) a substrate, and the fine particle structure according to any one of claims 1 to 4. 7. A non-crystalline layer is formed in contact with a region including a (111) plane which is exposed by processing a surface of a (111) -oriented crystalline layer which constitutes a substrate together with the non-crystalline layer,
1) A fine particle structure having a crystal form of an oriented opal crystal or a crystal form of an (111) oriented inverse opal crystal. 8. A crystalline substrate surface is processed to form (111)
A surface revealing step for revealing a surface; a depositing step for developing a fine particle dispersion on the revealed (111) surface and depositing fine particles in the fine particle dispersion on the (111) surface; A method of producing a fine particle structure, comprising: removing a solvent of a dispersion liquid from the deposited fine particles; and drying the deposited fine particles to make the deposited fine particles into opal crystals. . 9. A crystalline substrate surface is processed to form (111)
A surface revealing step of revealing a surface; a depositing step of spreading a fine particle dispersion on the revealed (111) surface and depositing fine particles in the fine particle dispersion on the (111) surface; A crystallization step of removing the solvent of the dispersion liquid from the deposited fine particles and drying the deposited fine particles to form the deposited fine particles as opal crystals; and different from the fine particles between the fine particles forming the opal crystals. A foreign substance filling step of filling a substance of a material, and an inverse opal crystallization step of making the opal crystal into an inverse opal crystal by removing the fine particles from the opal crystal filled with the substance of a different material. A method for producing a fine particle structure characterized by the above. 10. The substrate comprises a non-crystalline layer and a (111) -oriented crystal layer forming the substrate together with the non-crystalline layer, and the surface revealing step processes the surface of the crystal layer.
1) The method for producing a fine particle structure according to claim 8 or 9, wherein a region including a surface is exposed.