JP2003162231A - Method of manufacturing element, method of arraying element and method of manufacturing image display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing elements which can deal with the formation of microelements as well, and can easily connect the elements to the wiring disposed on the surface of a resin embedded with the elements and to provide a method of manufacturing an image display device using the same. <P>SOLUTION: Resin layers are formed by packing a resin to the circumferences of the elements arranged on the front surface of a release material layer and the elements and the peeling surfaces of the resin layers are formed flush with each other by peeling the resin layers from the release material layer, by which electrode pads and wiring are easily formed while the defect of connection is suppressed. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a method for manufacturing an element,
The present invention relates to a method of arranging elements and a method of manufacturing an image display device to which these methods are applied. More specifically, the present invention relates to a method of manufacturing an element capable of forming wirings and electrodes on a flat surface, a method of arranging the element, and a method of manufacturing an image display device to which these are applied.

[0002]

2. Description of the Related Art Electronic devices have been reduced in size, and electronic components mounted in these electronic devices have also been reduced in size.
Furthermore, in the manufacturing process of these electronic components, it is becoming important to arrange minute and complicated wirings with high precision. When rewiring the chip mounted in the device manufacturing process, once embed the chip in the resin or film that will become the insulating layer, then form the via hole in the required area by photolithography, etching, laser processing, etc. The electrodes and wirings are formed by depositing a metal material on the.

Another method is to etch back the entire resin without forming a via hole until the chip embedded in the resin is exposed. After exposing the electrode forming region or the wiring forming region of the chip, Electrodes, wiring, etc. are provided.

On the other hand, when light emitting elements are arranged in a matrix and assembled into an image display device, conventionally, a substrate such as a liquid crystal display device (LCD: Liquid Crystal Display) or a plasma display panel (PDP: Plasma Display Panel) is used. It has been practiced to form the device directly on top or to arrange a single LED package such as a light emitting diode display (LED display).
For example, in an image display device such as an LCD or a PDP, since the elements cannot be separated, it is usual that the respective elements are formed at intervals from the pixel pitch of the image display device from the beginning of the manufacturing process.

In the case of an LED display, a light emitting element packaged with resin or the like is taken out after dicing, and via holes are individually formed to form electrode pads for making electrical contact with the light emitting element, and thereafter, An image display device is formed by rearranging the elements at desired intervals.

[0006]

The method of forming a via hole in the resin portion and depositing a metal on the via hole to form an electrode pad or wiring requires complicated steps and increases the number of manufacturing steps. Further, as the size of the element becomes smaller, it becomes difficult to form via holes for forming wirings with high accuracy.

Further, when the entire resin portion is etched back to expose the chip surface without forming the via hole until the chip embedded in the resin is exposed, the height of the chip surface and the surface of the etched back resin portion are high. Since it is difficult to align with each other, a step may occur at the boundary between the exposed chip surface and the surface of the resin portion, and the chip surface and the surface of the resin portion may not be formed on the same plane. When a step is formed on the exposed surface, it may be difficult to electrically connect wirings provided on the surface of the resin portion and electrodes formed on the surface of the chip in the subsequent steps.

Furthermore, when simultaneously manufacturing a plurality of elements, it is necessary to form a via hole for each chip embedded in a resin, which is not expected to significantly improve the manufacturing efficiency and the yield. There is a demand for a technique for forming electrodes or wiring with high accuracy.

Therefore, in view of the above-mentioned problems, the present invention is also applicable to the manufacture of minute devices, and the device manufacturing method, the device arranging method, and the method for forming the electrodes or wirings can be easily formed. It is an object of the present invention to provide a method for manufacturing an image display device to which is applied.

[0010]

According to the method of manufacturing an element of the present invention, a resin portion is formed around a chip arranged on the surface of a release material layer, and the chip is peeled from the release material layer together with the resin portion. It is characterized by doing.

At this time, the surface of the release material layer is formed in advance, and the chip and the resin portion formed around the chip are separated from the release material layer, so that a step is formed at the boundary between the chip and the resin portion. The respective surfaces can be formed in the same plane without causing Therefore, it is possible to easily form the electrode formed over the chip and the resin portion and the wiring on the surface of the resin portion connected to the electrode.

Further, by forming the resin portion formed around the chip with an adhesive, the resin portion can be adhesively fixed to the temporary holding member, and the resin portion is fixed to the temporary holding member. By peeling from the release material layer as it is, the peeling surface of the chip and the peeling surface of the resin portion can be formed on the same plane.

The resin portion and the temporary holding member are bonded to each other by using materials having substantially the same thermal expansion coefficients for the substrate on which the release material layer is formed and the temporary holding member to which the resin portion is bonded and fixed. At this time, when these are exposed to a high temperature, it is possible to suppress the displacement of the element and the decrease in the adhesive strength of each adhesive region.

The element arranging method of the present invention is an element arranging method of rearranging a plurality of chips arranged on a first substrate on a second substrate, wherein the chips are arranged on the first substrate. A first transfer step of transferring the chip so as to be separated from the state and holding the chip on the temporary holding member; and further separating the chip held by the temporary holding member from the first transfer step. A step of transferring onto two substrates, and in at least one of the first transfer step and the second transfer step, forming a resin portion around the chip arranged on the surface of the release material layer, The chip and the resin portion are separated.

Furthermore, in the method of manufacturing the image display device of the present invention, in the method of manufacturing the image display device in which the light emitting elements are arranged in a matrix, it is separated from the state in which the light emitting elements are arranged on the first substrate. A second transfer step in which the light emitting element is transferred so that the light emitting element is held by the temporary holding member and the light emitting element held by the temporary holding member is further separated from the second substrate. A second transfer step of transferring onto the release material, and in at least one of the first transfer step and the second transfer step, a resin portion is formed around a light emitting element disposed on the surface of the release material layer, The light emitting element and the resin portion are separated from the layer.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION A method for manufacturing an element of the present invention will be described below with reference to FIGS. In the present embodiment, a light emitting diode will be described as an example of the element, but the present invention is not limited to the light emitting diode, and I
The present invention can be applied to any element as long as an electrode or wiring is formed after forming a resin portion around a chip such as C or a transistor element.

First, as shown in FIG. 1, an element forming substrate 1
The light emitting diode 2 is formed thereon, and the upper electrode 3 serving as a p-side electrode or an n-side electrode is formed on the upper surface of the light emitting diode 2. After the light emitting diode 2 is formed on the element formation substrate 1, the element separation groove 4 is formed by dicing or the like to separate the elements. The light emitting diode 2 is, for example, a GaN light emitting diode or a GaAs light emitting diode. When the light emitting diode 2 is a GaN light emitting diode, the element formation substrate 1 is a sapphire substrate and crystal growth is performed on the element formation substrate 1. As a result, the light emitting diode 2 is formed. When the light emitting diode 2 is a GaAs light emitting diode, the element forming substrate 1 is a GaAs substrate. The crystal plane of the crystal layer forming the light emitting diode 2 is not limited to the planar type light emitting diode parallel to the main surface of the element formation substrate 1, and an inclined crystal plane inclined with respect to the main surface of the element formation substrate 1 may be used. It may be a light emitting diode that has. In particular, in the case of a GaN-based light emitting diode, a high quality GaN-based light emitting diode can be formed by performing crystal growth by selective growth so as to have an S-plane inclined with respect to the main surface of the element formation substrate 1.

Next, a resin is applied from the upper side so as to cover the light emitting diode 2 to form a resin layer 5 as shown in FIG. The resin layer 5 is formed of a resin having a light transmitting property,
For example, it can be formed by applying polyimide or the like. The resin layer 5 covering the light emitting diode 2 is once adhered to the first temporary holding member 7 via the adhesive layer 6. As the adhesive layer 6, a thermosetting adhesive can be used, and as shown in FIG. 3, the resin layer 5 and the adhesive layer 6 are bonded by heating, and ultraviolet rays (UV
Light) 8 is irradiated to cure the resin layer 5. As will be described in a later step, a substrate having light transmissivity can be used for the first temporary holding member 7, and a sapphire substrate is particularly preferable.

Next, the light emitting diode 2 is attached to the element forming substrate 1.
Separate from. In the case where the light emitting diode 2 is a GaN-based light emitting diode, the light emitting diode 2 and the element forming substrate 1 can be separated by irradiating the laser beam 9 from the back surface side of the element forming substrate 1 and performing laser ablation. It is sufficient that the laser beam 9 has an energy density that can break the chemical bond in the junction region between the GaN-based semiconductor forming the light emitting diode 2 and the element forming substrate 1, and is shown in FIG. 4, for example. As described above, by irradiating the KrF excimer laser with the energy density of about 400 mJ / cm ² , it is possible to break the bond between the element forming substrate 1 and the GaN forming the light emitting diode 2. At this time, G is formed at the interface with the sapphire forming the element formation substrate 1.
Since aN decomposes into metallic Ga and nitrogen, it can be peeled off relatively easily. When the element forming substrate 1 is made of GaAs and the light emitting diode 2 is a GaAs light emitting diode, the element forming substrate 1 is removed by polishing the element forming substrate 1 from the back surface side of the element forming substrate 1. Exposing the light emitting diode 2.

Next, the separation surfaces of the light emitting diode 2 and the resin portion 5 from the element forming substrate 1 are washed. For example, the exposed separation surface of the light emitting diode 2 and the resin portion 5 with oxygen plasma is cleaned by etching or UV ozone irradiation as shown in FIG. When the GaN-based light-emitting diode is separated from the sapphire substrate using laser ablation, the GaN-based light-emitting diode decomposes into metallic Ga and nitrogen at the interface with sapphire. Therefore, the Ga deposited on the separation surface should be etched. Is required, N
Excess metal Ga due to aOH aqueous solution or dilute nitric acid
To remove. In the case of a GaAs-based light emitting diode, polishing debris after polishing the element forming substrate 1 may adhere to the resin portion 5 or the separation surface of the light emitting diode 2, so that G
As in the case of the aN light emitting diode, cleaning is performed using oxygen plasma or the like.

Next, the resin layer 5 and the adhesive layer 6 are diced to form the element isolation groove 10, and the element isolation is performed for each light emitting diode 2 as shown in FIG. The element isolation is performed by a dicing process or a dicing using an ordinary blade. When a narrow cut with a width of 20 μm or less is required, processing using a laser beam is performed to form an element isolation groove. 10 is formed.

Next, the light emitting diode 2 embedded in the resin layer 5 is selectively separated from the adhesive layer 6 and transferred to the surface of the release material layer 11. First, as shown in FIG. 7, the release material layer 11 is formed on the first substrate 12, and the surface of the release material layer 11 and the lower surface of the light emitting diode 2 are brought into close contact with each other. Release material layer 11
Is formed by applying a silicone resin on the first substrate 12 by spin coating or the like, and the surface of the release material layer 11 is formed flat. Also, by heating, the first substrate 12
The adhesive strength of the release material layer 11 can be increased. At this time, the release material layer 11 is not limited to the silicone resin,
It is sufficient that the light emitting diode 2 is once made of a material that can be peeled off again after the light emitting diode 2 is adhesively fixed. The first substrate 12 is preferably formed of a material having a coefficient of thermal expansion substantially equal to that of the first temporary holding member 7. For example, when the first temporary holding member 7 is a sapphire substrate, soda is used. By using lime glass or the like, it is possible to prevent the displacement of the element during the heat treatment.

Here, as shown in FIG. 8, the light emitting diode 2 which is element-separated together with the resin layer 5 is selectively transferred to the release material layer 11. The light 14 is selectively irradiated from the upper side of the first temporary holding member 7 so as to have a desired element spacing,
By curing the resin layer 5, the resin layer 5 and the adhesive layer 6
Decrease the adhesive strength of. Then, the first temporary holding member 7 is pulled away to separate the light emitting diode 2 and the resin layer 5 from each other.
The resin-formed chip 13 made of is selectively transferred to the release material layer 11. As the light 14, for example, a harmonic YAG laser light or UV light can be used, and the resin layer 5 can be rapidly cured, and the bonding strength between the resin portion 5 and the adhesive layer 6 can be reduced. Therefore, the resin-formed chip 13 in the region where the light 14 is selectively irradiated is separated from the first temporary holding member 7 and transferred to the release material layer 11.

Next, a resin portion 17 is formed around the resin-formed chip 13 transferred to the surface of the release material layer 11, and the resin-formed chip 13 and the resin portion 17 are separated from the release material layer 11 to form a resin. The separation surface of the forming chip 13 and the resin portion 17 is formed on the same plane. First, an adhesive is applied so as to cover the resin-formed chip 13 transferred to the release material layer 11,
The resin portion 17 is formed. Further, the second layer is formed through the peeling layer 16.
The temporary holding member 15 is adhered to the upper side of the resin portion 17. In this state, as shown in FIG. 9, light 18 is irradiated from the upper side of the second temporary holding member 15 to bond the resin portion 17 and the peeling layer 16 to each other. The resin portion 17 can be formed using an ultraviolet curable adhesive, and by using UV light as the light 18, the resin portion 17 is quickly cured and bonded to the release layer 16. At this time, the second temporary holding member 15 is made of a material that transmits the light 18. Also,
When the resin portion 17 is formed of a thermosetting adhesive, the second temporary holding member 1 is formed by heat treatment.
5 and the first substrate 12, it is desirable to use a material having a thermal expansion coefficient substantially equal to that of the first substrate 12 in order to suppress a difference in dimensional change due to a difference in thermal expansion coefficient as much as possible. As in the present embodiment, for example, the second temporary holding member 15
When a sapphire substrate is used for the first substrate 12, soda lime glass can be used for the first substrate 12. Since the second temporary holding member 15, the peeling layer 16 and the resin portion 17 are integrally bonded, as shown in FIG.
Together with the release material layer 11, the resin portion 17 and the light emitting diode 2 are provided.
Then, the light emitting diode 2 and the resin portion 17 can be formed on the same plane as the release surface from the release material layer 11.
Here, since the release material layer 11 is formed in advance so that its surface becomes flat, the light emitting diode 2 and the resin portion 17 are separated from the release material layer 11, and the boundary between the light emitting diode 2 and the resin portion 17 is separated. It is possible to form a flat surface in a single process without producing a step. Here, the release material layer 11 and the first substrate 12 on which it is formed
Since it can be used repeatedly, the manufacturing cost can be suppressed.

Further, the back surface electrode 19 extends over the peeled surface between the light emitting diode 2 and the resin portion 17 formed as described above.
Is formed. As shown in FIG. 11, the resin-formed chip 1
A back surface electrode 19 is formed from the peeling surface exposing the light emitting diode 2 embedded in the inside of 3 to the peeling surface of the resin portion 17. The back surface electrode 19 can be formed by a vapor deposition method, and is formed of, for example, a metal material such as Ti / Pt / Au or a transparent electrode (ITO, ZnO based, etc.). In particular, when the transparent electrode is formed, even if the back surface of the light emitting diode 2 is largely covered, light emission is not blocked, so that the patterning accuracy is rough, a large electrode can be formed, and the patterning process is facilitated. At this time, the peeling surface exposing the light emitting diode 2 and the resin portion 17
Since the peeling surface of No. 1 does not form a step at these boundaries and is formed on the same plane, the back surface electrode 19 has a poor connection at the boundary between the peeling surface exposing the light emitting diode 2 and the peeling surface of the resin portion 17. Can be suppressed. Further, wiring can be continuously formed from the back surface electrode 19 to the peeled surface of the resin portion 17. Therefore, the resin portion 17 formed on the periphery of the light emitting diode 2 or the via hole is formed.
Without removing the resin portion 17 from the light emitting diode 2
It is possible to easily form electrodes or wirings over the entire length.

Subsequently, as shown in FIG. 12, the second substrate 2
An adhesive is applied to 1 to form an adhesive layer 20, and a resin portion 17 enclosing the light emitting diode 2 having the back electrode 19 formed thereon is adhered from the upper side thereof. At this time, an epoxy-based thermosetting resin can be used for the adhesive layer 20, and the adhesive layer 20 is cured by heat treatment for adhesion.

Next, as shown in FIG. 13, the second temporary holding member 15 is peeled from the peeling layer 16. By irradiating the laser beam 22 from the upper side of the second temporary holding member 15 to cure the peeling layer 16, the adhesive force between the peeling layer 16 and the second temporary holding member 15 is reduced, and the second temporary holding is performed. The working member 15 can be easily peeled off. The release layer 16 may be made of a material whose adhesive strength is reduced by irradiating the laser beam 22, and for example, polyimide can be used in this embodiment. By using the KrF excimer laser light as the laser light 22, the polyimide is hardened, and the second temporary holding member 15 can be easily peeled off from the peeling layer 16.

Next, a process of forming an electrode pad or wiring on the upper electrode 3 will be described with reference to FIGS. 14 to 16. First, the peeling layer 16, the resin portion 17 and the resin layer 5 are removed from the upper side of the peeling layer 16 by O ₂ plasma treatment or the like to expose the upper electrode 3 of the light emitting diode 2 as shown in FIG.

Subsequently, a protective layer 23 is once formed using an insulating material so as to cover the back surface electrode 19, the light emitting diode 2 and the upper electrode 3, and then a position corresponding to the light emitting diode 2 is irradiated with laser light to form a via hole. 24 is formed. A material such as a transparent epoxy adhesive can be used for the protective layer 23 so as not to block light from the light emitting diode. The protective layer 23 is cured by heating, and the light emitting diode 2
Cover. The via hole 24 is formed by selectively removing the protective layer 23 with excimer laser light, harmonic YAG laser light, carbon dioxide gas laser light, or the like. Further, after forming the via hole 24, a second hole is formed on the via hole 24.
The protective layer 25 of is formed. The protective layer 25 may be made of the same material as the material for forming the protective layer 23, and can be formed by applying a material such as a transparent epoxy adhesive and then curing by heating. As in the case of forming the via hole 24, after forming the protective layer 25, the protective layer 25 is selectively removed by excimer laser light, harmonic YAG laser light, carbon dioxide laser light, etc. As shown, a via hole 26 is formed, exposing the upper electrode 3.

After the via hole 26 is formed as described above, the electrode pad 27 is formed on the upper electrode 3 facing the via hole 26.
To form. The electrode pad 27 is selectively etched after forming a metal layer by sputtering or the like, and the electrode pad 27 having a desired size is formed as shown in FIG. The electrode pad 27 can be formed by laminating a plurality of metals such as Ti / Al.
Further, since the light emitting diodes 2 are selectively peeled from the first temporary holding member 1 at a desired element spacing, a sufficient spacing between the light emitting diodes 2 can be ensured, and the electrode pad 27 can have a desired size. , Can be formed into a shape. Further, the wiring is not limited to the electrode pad 27, and the wiring can be directly formed from the upper electrode 3 to the surface of the protective layer 25.

Next, the light emitting diodes 2 are individually cut out to be in the state of the resin forming element. The cutting can be performed by, for example, laser dicing. The laser dicing is performed by irradiating a line beam of laser light, and the protective films 23 and 25 and the resin layer 20 are attached to the substrate 21.
Cut until exposed. By this laser dicing, the light emitting diode 2 is cut out as a resin forming element having a predetermined size on which electrode pads and wirings are formed.

The above-described device manufacturing method is applied to, for example, a device arranging method in which a light emitting device is embedded in a resin to form a chip, and then enlarged and transferred and rearranged, and an image display device manufacturing method to which the device is applied. can do. Hereinafter, a method of arranging the elements and a method of manufacturing an image display device to which the elements are applied will be described.

For example, when an image display device is manufactured using light emitting diodes, it is necessary to arrange the light emitting diodes so as to be spaced apart from each other. There are various methods for this arrangement, but here, the two-step expansion transfer method will be described as an example. In the two-step expansion transfer method, first, the chips formed on the first substrate with a high degree of integration are transferred to the temporary holding member so that the chips are separated from the state in which the chips are arranged on the first substrate. Then, two-step enlargement transfer is performed in which the chips held by the temporary holding member are further separated and transferred onto the second substrate. Although the transfer is performed in two steps in the present embodiment, the transfer may be performed in three steps or in multiple steps depending on the degree of expansion in which the chips are arranged separately.

Therefore, it is possible to easily form electrodes or wirings on the element by using the above-described element manufacturing method in any of the multi-step transfer steps.

FIG. 17 is an overall process diagram showing the basic process of the two-step expansion transfer method. First, a chip 32 such as a light emitting device is formed on the first substrate 30 shown in FIG.
Are densely formed. By forming the chips densely, it is possible to increase the number of chips generated for each substrate,
Product cost can be reduced. The first substrate 30 is a substrate capable of forming various elements such as a semiconductor wafer, a glass substrate, a quartz glass substrate, a sapphire substrate, and a plastic substrate. Each chip 32 is formed directly on the first substrate 30. Alternatively, it may be an array of those formed on another substrate.

Next, as shown in FIG. 17B, each chip 32 is transferred from the first substrate 30 to a temporary holding member 31 shown by a broken line in the drawing, and each chip is placed on this temporary holding member 31. 32 is retained. Here, the adjacent chips 32 are spaced apart and arranged in a matrix as shown. That is, the chips 32 are transferred so as to widen the spaces between the chips in the x direction, but are also transferred so as to widen the spaces between the chips also in the y direction perpendicular to the x direction. The distance separated at this time is not particularly limited, and as an example, the distance can be set in consideration of the resin portion formation and the electrode pad formation in the subsequent process. The first substrate 30 is provided on the temporary holding member 31.
It is also possible to transfer all the chips on the first substrate 30 at a distance from each other when the transfer is performed. In this case, the size of the temporary holding member 31 may be equal to or larger than the size obtained by multiplying the number of chips 32 arranged in a matrix (in the x direction and the y direction) by the distance. It is also possible to transfer a part of the chips on the first substrate 30 to the temporary holding member 31 with a space therebetween.

After the first transfer step as described above, as shown in FIG. 17C, since the chips 32 existing on the temporary holding member 31 are separated from each other, the chips 32 are covered with resin. Further, the resin is removed by laser dicing or the like to separate the elements, and the resin-formed chip 34 is formed. The chip 32 is located substantially in the center of the resin-formed chip 34 on a plane, but may be located at a position deviated to one side or a corner side.

Next, as shown in FIG. 17D, the second transfer process is performed. In this second transfer step, the chips 32 arranged in a matrix on the temporary holding member 31 are transferred onto the second substrate 35 so as to be further separated together with the resin-formed chips 34. At this time, the chips 32 are selectively separated together with the resin-formed chips 34 and arranged in a matrix as shown. That is, the chips 32 are transferred so as to widen the spaces between the chips in the x direction, but are also transferred so as to widen the spaces between the chips also in the y direction perpendicular to the x direction. Assuming that the positions of the chips arranged in the second transfer step correspond to the pixels of the final product such as an image display device, approximately an integer multiple of the pitch between the original chips 32 is arranged in the second transfer step. It becomes the pitch of the chips 32. Here, the enlargement ratio of the pitch separated from the first substrate 30 by the temporary holding member 31 is n, and the temporary holding member 31 is
Therefore, when the enlargement ratio of the pitches separated from each other on the second substrate 25 is m, the value E that is a substantially integral multiple is represented by E = n × m.

At this time, the release material layer 36 is formed on the second substrate 35.
Are formed in advance, and the resin-formed chip 34 is formed on the second substrate 35.
A resin portion is formed around each chip 32 separated from each other,
By peeling the chip 32 from the release material layer 36 together with the resin portion, the peeling surface of the chip 32 and the peeling surface of the resin portion can be formed on the same plane. Therefore, it is possible to suppress the occurrence of a step at the boundary between the chip 32 and the resin portion as much as possible, and it is possible to form the back surface electrode or the wiring extending over the peeling surface of the chip 32 and the peeling surface of the resin portion on the same plane, These back electrodes or wirings can be formed while suppressing connection failure as much as possible. This wiring is, for example, the chip 32.
Is a light emitting element such as a light emitting diode, a p electrode,
Including wiring to the n-electrode. In addition, the mold release material layer is formed on the temporary holding member 31, and the chip 32 and the chip 3 are separated at the stage of peeling the resin-formed chip 34 from the temporary holding member 31.
The peeling surface of the resin portion formed around 2 may be formed in the same plane. Therefore, the release material layer is not limited to the second substrate 35 and may be formed on any transfer destination such as the temporary holding member 31.

In the two-step enlargement transfer method shown in FIG. 17, the back electrode is easily formed by utilizing the space where the chips are separated after the first transfer and the flat separation surface between the chips and the adhesive layer. be able to. Therefore, the yield of the image display device can be improved. In addition, in the two-step magnifying transfer method of this example, the step of separating the distance between the chips is two steps. Will be reduced. That is, for example, here, the enlargement ratio of the pitch separated from the first substrate 30 in the temporary holding member 31 is set to 2
(N = 2), from the temporary holding member 31 to the second substrate 35.
If the enlargement ratio of the separated pitch in 2 is 2 (m = 2),
If it is attempted to transfer to an expanded area by one transfer, the final expansion ratio is 4 times 2 × 2, and it is necessary to perform 16 times of the square of the final expansion rate, that is, 16 times of alignment of the first substrate. In the two-step expansion transfer method of this example, the number of times of alignment is simply 4 times the expansion rate 2 squared in the first transfer step and 4 times the expansion rate 2 squared in the second transfer step. It will be 8 times in total. That is, when the same transfer magnification is intended, (n + m) ² = n ² +2 nm
Since it is + m ² , the number of times of transfer can be reduced by 2 nm. Therefore, the manufacturing process also saves time and cost by the number of times, which is useful especially when the expansion rate is large.

In the two-step enlargement transfer method shown in FIG. 17, the chip 32 is, for example, a light emitting element.
The present invention is not limited to this, and other elements such as liquid crystal control element, photoelectric conversion element, piezoelectric element, thin film transistor element, thin film diode element, resistance element, switching element, micro magnetic element, micro optical element, or a portion thereof,
It may be a combination of these.

In the second transfer step, the chip is treated as a resin-formed chip and transferred onto the second substrate from the temporary holding member. For example, when the chip is a light emitting element in FIG. 18, the resin-formed chip 40 is
The resin 42 surrounds the light emitting elements 41 that are arranged apart from each other.
The resin-molded chip 40, which is hardened with
Can be used when the light emitting element 41 is transferred from the temporary holding member to the second substrate. Resin forming chip 40
Is a substantially flat plate whose main surface is a substantially square shape. The shape of the resin-formed chip 40 is a shape formed by solidifying a resin 42. Specifically, an uncured resin is applied to the entire surface so as to include each light emitting element 41, and the edge of the resin is cured. It is a shape obtained by cutting the portion by dicing or the like.

Electrode pads 43 and 44 are formed on the front surface side and the back surface side of the substantially flat resin 42, respectively. The electrode pads 43, 44 are formed on the entire surface by the electrode pads 43, 4
It is formed by forming a conductive layer such as a metal layer or a polycrystalline silicon layer which is a material of No. 4, and patterning it into a required electrode shape by a photolithography technique. These electrode pads 43 and 44 are formed so as to be connected to the p electrode and the n electrode of the light emitting element 41, respectively.

Here, the electrode pads 43 and 44 are formed on the front surface side and the back surface side of the resin forming element 40, respectively.
It is also possible to form both electrode pads on one surface. For example, in the case of a thin film transistor, there are three electrodes of a source, a gate and a drain.
One or more may be formed. Further, as shown in FIG. 19, the positions of the electrode pads 43 and 44 are deviated from each other on the flat plate so that the contacts do not overlap even if the contacts are taken from the upper side in the final wiring formation. Electrode pad 4
The shapes of 3, 44 are not limited to the square shape and may be other shapes.

By constructing such a resin-formed chip, the periphery of the light emitting element 41 is covered with the resin 42 and planarized, so that the electrode pads 43 and 44 can be formed with high precision and are wider than the light emitting element 41. The electrode pads 43 and 44 can be extended to the region, and the handling becomes easy when the transfer in the next second transfer step is advanced by the suction jig. As will be described later, since the final wiring is performed after the subsequent second transfer step, the electrode pad 43 of a relatively large size,
By using the wiring 44, wiring failure can be prevented.

Next, FIG. 20 shows an example of a light emitting element used in the two-step expansion transfer method of this example. 20A is a sectional view of the element, and FIG. 20B is a plan view of the element.
This light emitting element is a GaN-based light emitting diode, for example, an element that is crystal-grown on a sapphire substrate. In such a GaN-based light emitting diode, laser ablation occurs due to laser irradiation through the substrate, and Ga
Along with the phenomenon that nitrogen of N vaporizes, film peeling occurs at the interface between the sapphire substrate and the GaN-based growth layer, which has the feature that element isolation can be facilitated.

First, regarding the structure, a hexagonal pyramid-shaped GaN layer 52 selectively grown on a base growth layer 51 made of a GaN-based semiconductor layer is formed. An insulating film (not shown) is present on the underlying growth layer 51, and the hexagonal pyramidal GaN layer 52 is MOCVD-formed in the opening of the insulating film.
It is formed by the method. The GaN layer 52 is a pyramid-shaped growth layer covered with the S-plane (1-101 plane) when the main surface of the sapphire substrate used for growth is the C-plane, and is a region doped with silicon. is there. This G
The inclined S-plane portion of the aN layer 52 functions as a clad having a double hetero structure. An InGaN layer 43, which is an active layer, is formed so as to cover the inclined S-plane of the GaN layer 52, and a magnesium-doped GaN layer 54 is provided outside thereof.
Is formed. This magnesium-doped GaN layer 54
Also functions as a clad.

In such a light emitting diode, the p electrode 5
5 and the n-electrode 56 are formed. The p-electrode 55 is Ni / Pt / A formed on the magnesium-doped GaN layer 54.
It is formed by evaporating a metal material such as u or Ni (Pd) / Pt / Au. The n-electrode 56 is formed by vapor-depositing a metal material such as Ti / Al / Pt / Au at the opening of the insulating film (not shown). When the n electrode is taken out from the back surface side of the underlayer growth layer 51, the formation of the n electrode 56 is not necessary on the front surface side of the underlayer growth layer 51.

The GaN-based light emitting diode having such a structure is an element capable of emitting blue light, and can be peeled off from the sapphire substrate relatively easily by laser ablation, and the laser beam is selectively irradiated. As a result, selective peeling is realized. The GaN-based light emitting diode may have a structure in which an active layer is formed on a flat plate or in a strip shape, or may have a truncated pyramid structure in which a C plane is formed at an upper end portion. Further, it may be another nitride-based light emitting device, a compound semiconductor device, or the like.

Next, a method of manufacturing an image display device to which the element arraying method shown in FIG. 17 is applied will be specifically described. As the light emitting element, for example, the GaN-based light emitting diode shown in FIG. 20 is used. First, as shown in FIG. 21, a plurality of light emitting diodes 62 are densely formed on the main surface of the first substrate 61. The size of the light emitting diode 62 can be minute, for example, about 20 μm on each side.
It can be a degree. As a constituent material of the first substrate 61, a material having a high transmittance with respect to the wavelength of the laser with which the light emitting diode 62 is irradiated, such as a sapphire substrate, is used. Although the p-electrode and the like are formed in the light-emitting diode 62, the final wiring is not yet formed, and the groove 52g for separating the elements is formed, and the individual light-emitting diodes 62 can be separated. The formation of the groove 62g is performed by reactive ion etching, for example.

Next, an adhesive (for example, an ultraviolet curable adhesive) sufficient to cover the light emitting diode 62 is applied on the first substrate 61 to form an adhesive layer 63 so that the light emitting diode 62 is supported. The first temporary holding member 65 is overlapped. In this state, as shown in FIG. 22, ultraviolet rays (UV light) 66 are applied to the adhesive layer 63 from the back surface side of the first substrate 61.
Is irradiated to cure it. The first substrate 61 is a sapphire substrate, and the UV light 66 is transmitted through the adhesive layer 63.
Quickly cure. At this time, the adhesive layer 63 and the first temporary holding member 65 are bonded to each other via the peeling layer 64 so that the first temporary holding member 65 can be easily peeled off in a later step. Here, as an example of the first temporary holding member 65, a glass substrate, a quartz glass substrate, a plastic substrate, a sapphire substrate, or the like can be used, and the sapphire substrate was used in this embodiment. The release layer 64 has a fluorine coating,
Although a silicone resin, a water-soluble adhesive (for example, polyvinyl alcohol: PVA), a polyimide, or the like can be used, the polyimide is used here. At this time, since the first temporary holding member 65 is supported by the light emitting diode 62, the thickness of the adhesive layer 63 is equal to that of the first substrate 61 and the first substrate 61.
The light emitting diode 62 functions as a spacer because the space between the light emitting diode 62 and the temporary holding member 65 is regulated. That is, the adhesive layer 63 having a constant thickness is applied to the first substrate 6
It is formed between the first and first temporary holding members 65. Therefore, since the thickness of the adhesive layer 63 is determined by the height of the light emitting diode 62, it is possible to form the adhesive layer having a constant thickness without strictly controlling the pressure.

After curing the adhesive layer 63, as shown in FIG. 23, the light emitting diode 62 is irradiated with laser light 68 from the back surface of the first substrate 61, and the light emitting diode 62 is laser ablated from the first substrate 61. Use to peel off. Since the GaN-based light-emitting diode 62 decomposes into metallic Ga and nitrogen at the interface with sapphire, it can be peeled off relatively easily. An excimer laser, a harmonic YAG laser, or the like is used as a laser for irradiation. By the peeling using the laser ablation, the light emitting diode 62 is separated at the interface of the first substrate 51 and is transferred onto the first temporary holding member 65 in a state of being embedded in the adhesive layer 63. At this time, the first substrate 61 of the light emitting diode 62
Metal Ga is deposited on the peeling surface 67 of the metal by laser ablation, and it is necessary to etch this.

Therefore, wet etching is performed with an aqueous solution of NaOH or dilute nitric acid to remove Ga56 deposited on the peeled surface 67 as shown in FIG. Furthermore,
As shown in FIG. 25, oxygen plasma (O ₂ plasma) 7
The surface is cleaned by 0 and the adhesive layer 6 is diced.
3. The peeling layer 64 is cut by the dicing groove 69, and each light emitting diode 62 is diced, and then the light emitting diodes 62 are selectively separated. As the dicing process, dicing using an ordinary blade, and when a narrow cut of 20 μm or less is required, laser beam processing is performed. The cut width depends on the size of the light emitting diode 62 covered with the adhesive layer 63 in the pixel of the image display device, but as an example, a groove is formed by an excimer laser to form a chip shape.

Next, the light emitting diodes 62 are selectively separated. First, as shown in FIG. 26, the peeling surface of the light emitting diode 62 covered with the adhesive layer 63 is brought into close contact with the second substrate 71 on which the release material layer 72 is formed. At this time, the release material layer 72 is formed by applying a silicone resin by spin coating or the like, and the surface thereof is flattened. Subsequently, the peeling layer 64 is cured by selectively irradiating light from the back surface side of the first temporary holding member 65 to which the light emitting diode 62 is not adhered. Therefore, by selectively irradiating the boundary region between the adhesive layer 63 covering the light emitting diode 62 to be transferred to the release material layer 72 and the peeling layer 64 with the light 73, and separating the first temporary holding member 65, FIG. As shown in FIG. 7, the light emitting diode 62 in the area irradiated with the light 73 is transferred to the release material layer 72. The light 73 only needs to be able to cure the peeling layer 64 and reduce the adhesive strength between the peeling layer 73 and the adhesive layer 63. For example, excimer laser light, harmonic YAG laser light, or the like can be used. I can. Further, the light emitting diode 62 is selectively transferred to the release material layer 72 as the resin-formed chip 74 covered with the adhesive layer 63.

Next, an adhesive is applied again so as to cover the resin-formed chip 74 transferred to the release material layer 72 to form an adhesive layer 75 as a resin portion. The adhesive layer 75 is a resin portion that is separated from the release material layer together with the resin forming chip 74 in a later step, and here, the second temporary holding member 77 and the adhesive layer 75 are once bonded via the release layer 76. . At this time, the peeling layer 76 is cured by irradiating light 78 from the upper side of the second temporary holding member 77, and the bonding is performed as shown in FIG. Therefore, by firmly adhering the adhesive layer 75 containing the resin-formed chip 74 to the second temporary holding member 77, as shown in FIG. 29, the release material layer 72 is formed.
Can be peeled off from the adhesive layer 75. At this time, since the surface of the release material layer 72 is previously formed flat, the release surface 79 of the adhesive layer 75 and the release surface 80 of the resin-formed chip 74, which have been released from the release material layer 72, form the same plane. Resin-formed chip 7 having a flat shape so that
4 can be suppressed as much as possible at the boundary between the adhesive layer 4 and the adhesive layer 75. Here, the peeling surface 80 of the resin-formed chip 74 is a surface where the lower surface of the light emitting diode 62 is exposed, and an electrode is directly formed on the peeling surface 80 to electrically contact the light emitting diode 62. You can

Then, as shown in FIG. 30, an electrode pad 81 is formed from the peeling surface 80 of the resin-formed chip 74 to the peeling surface 79 of the adhesive layer 75. Electrode pad 81
Is formed by a vapor deposition method or the like. For example, the transparent electrode (I
A material such as TO, ZnO type) or Ti / Pt / Au is used. In the case of a transparent electrode, even if the back surface of the light emitting diode 62 is largely covered, it does not block light emission.
The patterning accuracy is rough, large electrodes can be formed, and the patterning process becomes easy. Further, since there is almost no step at the boundary between the peeling surface 80 which is the back surface of the light emitting diode 62 and the adhesive layer 75 which is also an insulating material,
When the electrode pad and the wiring are formed from the back surface of the light emitting diode 62 to the peeling surface 79, connection failure does not occur. Furthermore, the electrode pads can be formed by a batch process without individually forming via holes in the plurality of light emitting diodes 62. Therefore, the connection failure of the electrode pad 81 can be suppressed, and the electrode pad can be formed on the back surface of the light emitting diode 62 by a simple process.

Further, as shown in FIG. 31, after the adhesive layer 75 containing the resin-formed chip 74 is adhered to the adhesive layer 90 formed on the substrate 91, the second layer is formed as shown in FIG.
The light 92 is emitted from the upper side of the temporary holding member 77 of
The temporary holding member 77 is peeled from the peeling layer 76. By forming the peeling layer 76 from polyimide, the peeling layer 76 is rapidly cured by irradiating UV light as the light 92, and the second temporary holding member 77 can be easily peeled off.

Then, as shown in FIG. 33, the release layer 76.
A via hole 92 is formed by laser light or the like from above to expose the upper electrode 93 of the light emitting diode 62.
Excimer laser light, harmonic YAG laser light, carbon dioxide laser light, or the like can be used to form the via hole 92. At this time, the peeling layer 76 may be etched back and removed.

Next, the anode side electrode pad 94 connected to the p side electrode of the light emitting diode 62 through the via hole 92 is formed. The anode side electrode pad 94 is formed of, for example, Ni / Pt / Au. FIG. 34 shows a state in which the light emitting diode 62 is transferred to the substrate 91, the via hole 92 on the anode electrode (p electrode) side is formed, and then the anode side electrode pad 94 is formed.

After forming the anode side electrode pad 94,
As shown in FIG. 35, the adhesive layers 75 and 90 are formed with a dicing separation groove 95 by, for example, laser dicing, and the resin forming element 96 having the electrode pads 81 and 94 is cut out. Laser dicing is performed by irradiating a laser line beam, and the adhesive layers 75 and 90 are cut until the substrate 91 is exposed. By this laser dicing, each light emitting diode 62 is cut out as a resin forming element 96 having a predetermined size in which the electrode pads 81 and 94 are formed, and the process proceeds to a mounting process described later.

In the mounting step, the resin forming element 96 including the light emitting diode 62 is separated from the substrate 91 by a combination of mechanical means (element suction by vacuum suction) and laser ablation. FIG. 36 is a diagram showing that the resin forming elements 96 arranged on the substrate 91 are picked up by the suction device 103. Adsorption hole 1 at this time
Reference numeral 05 denotes a matrix-shaped opening at the pixel pitch of the image display device so that a large number of resin-forming elements 96 can be adsorbed at once. The opening diameter at this time is, for example, about 100 μm in diameter, and the openings are formed in a matrix shape with a pitch of 600 μm, and about 300 pieces can be adsorbed at once. At this time, as the member of the adsorption hole 105, for example, a member manufactured by Ni electroforming or a metal plate such as stainless steel (SUS) that is hole-processed by etching is used, and the adsorption chamber 104 is provided in the back of the adsorption hole 105. The resin forming element 96 is formed by controlling the suction chamber 104 to a negative pressure.
Can be absorbed. At this time, since the upper surface of the resin forming element 96 is substantially flattened, selective suction by the suction device 103 can be easily advanced.

It should be noted that the suction device 103 is preferably provided with an element displacement preventing means so that the resin forming element 96 can be stably held at a constant position when the element is sucked by vacuum suction. . In the present embodiment, the element position deviation prevention means can be formed as a positioning pin that comes into contact with the peripheral surface of the resin forming element 96, and the positioning pin can be formed on the peripheral surface of the resin forming element (specifically, the adhesive cut by laser dicing). By making contact with the cut surface of the agent layer 75, the suction device 103 and the resin forming element 96 (that is, the light emitting diode 62) are accurately aligned with each other. At this time,
If the cut surface of the element isolation groove 95 is tapered,
Even if there is a slight misalignment between the suction device 103 and the resin forming element 96, it is promptly corrected.

When the resin forming element 96 is peeled off,
The adsorption of the element by the adsorption device 103 and the exfoliation of the resin-formed element by UV light irradiation are combined so that the exfoliation proceeds smoothly. The peeling of the resin forming element is performed by irradiating UV light from the back surface side of the base 91. By this irradiation of UV light, peeling occurs at the interface between the substrate 91 and the adhesive layer 90.

In FIG. 37, the resin forming element 96 is mounted on the wiring board 1.
FIG. 10 is a diagram showing the transfer to No. 10. The element forming substrate 110 is a wiring substrate having an electrode layer 117, and the adhesive layer 116 is applied to the wiring substrate 110 in advance when the resin forming element 96 is mounted.
It is possible to cure the adhesive layer 116 on the lower surface and fix the resin forming elements 96 to the wiring board 110 to arrange them. At the time of this mounting, the suction chamber 104 of the suction device 103 is in a high pressure state, and the coupled state of the suction device 103 and the resin forming element 96 by suction is released. Adhesive layer 1
16 can be constituted by a UV curable adhesive, a thermosetting adhesive, a thermoplastic adhesive, or the like. The position where the resin forming element 96 is arranged on the element forming substrate 110 is the first position.
The arrangement is farther than the arrangement on the temporary holding member 65. Energy for curing the resin of the adhesive layer 116 is supplied from the back surface of the element formation substrate 110. In the case of a UV curable adhesive, a UV irradiation device is used. In the case of a thermosetting adhesive, only the lower surface of the resin forming element 96 is cured by infrared heating or the like. In the case of a thermoplastic adhesive, infrared or laser irradiation is applied. The agent is melted and bonded.

Further, the electrode layer 117 which also functions as a shadow mask on the wiring substrate 110 can improve the contrast of the image by forming the black chrome layer 118 on the screen side surface thereof. Furthermore, the energy absorption rate of the black chrome layer 118 can be increased, and the adhesive layer 116 can be rapidly cured by the selectively irradiated energy beam 113.

FIG. 38 is a diagram showing a state in which a plurality of resin forming elements are arranged on the element forming substrate 110 and the insulating layer 119 is applied. Adsorption device 10 used in FIGS. 36 and 37.
Each pixel can be formed with the pitch kept constant by using 3 as it is and shifting the mounting position on the element forming substrate 110. As the insulating layer 119, a transparent epoxy adhesive, a UV curable adhesive, polyimide or the like can be used.

Next, as shown in FIG. 39, corresponding to the electrode pads 81, 94 of the light emitting diode 62 and the electrode layer 117 on the wiring substrate 110, via holes 125, 126, for electrically connecting them. 127, 128, 12
9 and 130 are formed, and wiring is further formed. The formation of these via holes is also performed using a laser beam. There are three types of depth for via holes, one for connecting to the wiring board, one for connecting to the anode electrode, and one for connecting to the cathode electrode. For example, this can be controlled by the pulse number of the laser beam, A via hole with a large depth.

Via holes 125 and 12 are formed in the insulating layer 119.
After forming 6, 127, 128, 129, and 130, wirings 133, 134, and 135 that connect the anode electrode pad 94 and the cathode electrode pad 81 of the light emitting diode 62 to the wiring electrode layer 117 of the element formation substrate 110 are formed. To do. Then, a protective layer is formed on the wiring to complete the panel of the image display device. At this time, as the protective layer, a material such as a transparent epoxy adhesive can be used as in the insulating layer 117. This protective layer is heat-cured to completely cover the wiring.
After that, the driver IC is connected from the wiring at the end of the panel to manufacture the drive panel.

In the element arranging method as described above, the distance between the elements is already increased at the time when the light emitting diodes are held by the temporary holding member, and the electrode having a relatively large size is utilized by utilizing the widened distance. It is possible to provide the pads 81 and 94. Wiring is performed using the electrode pads 81 and 94 having a relatively large size, so that the wiring can be easily formed even when the size of the final device is significantly larger than the element size.
Further, in the device arranging method of the present embodiment, the peeling surface from the substrate of the light emitting diode and the adhesive layer encapsulating the light emitting diode is formed on the same plane, so that a wide range from the light emitting diode to the adhesive layer is obtained. The electrode pad can be formed on the substrate, and connection failure at the boundary between the light emitting diode and the adhesive layer can be suppressed. Further, since the electrode pads can be formed on the plurality of light emitting diodes in the batch process, the manufacturing process can be simplified and the manufacturing cost can be suppressed.

[0070]

As is apparent from the above description, according to the present invention, it is possible to manufacture an element in which an electrode pad can be formed while suppressing defective connection in an element embedded in resin. . Further, by applying the element manufacturing method of the present invention, it is possible to provide an element arranging method capable of suppressing defective connection of elements as much as possible and an image display apparatus manufacturing method using the element arranging method. Therefore, according to the present invention, it is possible to manufacture a high-quality image display device having almost no defective connection between the electrode pad or the wiring and the element body without requiring a large manufacturing cost.

[Brief description of drawings]

FIG. 1 is a layout view in which light emitting diodes are arranged.

FIG. 2 is a sectional view in which a resin layer is formed.

FIG. 3 is a process drawing of adhering a resin layer to a first temporary holding member.

FIG. 4 is a process drawing of peeling a substrate from a light emitting diode.

FIG. 5 is a process drawing of holding the light emitting diode on the first temporary holding member.

FIG. 6 is a process drawing for separating a resin-formed chip.

FIG. 7 is a process drawing of closely adhering a resin-formed chip to a release material layer.

FIG. 8 is a process drawing of transferring a resin-formed chip.

FIG. 9 is a process drawing of forming a resin portion around a resin-formed chip.

FIG. 10 is a process drawing of separating the resin-formed chip and the resin portion from the release material layer.

FIG. 11 is a process drawing of forming an electrode pad on the release surface of a resin-formed chip.

FIG. 12 is a process drawing of adhering a surface on which an electrode pad is formed to a substrate via an adhesive layer.

FIG. 13 is a process drawing of peeling the second temporary holding member.

FIG. 14 is a process drawing of exposing a light emitting diode.

FIG. 15 is a process drawing of forming a via hole.

FIG. 16 is a process drawing of forming an upper electrode pad.

FIG. 17 is an overall process diagram showing the flow of processes of the element arraying method of the present invention.

FIG. 18 is a structural diagram showing an outline of the structure of a resin-formed chip.

FIG. 19 is a structural diagram showing an outline of a planar structure of a resin-formed chip.

20A and 20B are structural diagrams showing a structure of a light emitting diode, wherein FIG. 20A is a sectional structural view and FIG.

FIG. 21 is a view showing a light emitting diode formed on a substrate.

FIG. 22 is a process drawing of holding a temporary holding member after applying an adhesive layer to a light emitting diode.

FIG. 23 is a process drawing of peeling the resin-formed chip together with the adhesive layer from the substrate.

FIG. 24 is a diagram showing a state where the peeled surface of the resin-formed chip has been washed.

FIG. 25 is a diagram showing a state in which a resin-formed chip is separated into elements.

FIG. 26 is a process drawing of adhering a resin-formed chip to a release material layer.

FIG. 27 is a process drawing of transferring a resin-formed chip to a release material layer.

FIG. 28 is a process drawing of adhering the resin-formed chip and the adhesive layer to the temporary holding member.

FIG. 29 is a process drawing of separating the resin-formed chip and the adhesive layer from the substrate.

FIG. 30 is a process drawing of forming an electrode pad on a peeled surface of a light emitting diode.

FIG. 31 is a process drawing of adhering a light emitting diode to an adhesive layer.

FIG. 32 is a process drawing of peeling the second temporary holding member from the peeling layer.

FIG. 33 is a process drawing of forming a via hole in the adhesive layer.

FIG. 34 is a process drawing of forming an upper electrode pad on a light emitting diode.

FIG. 35 is a process drawing of separating the resin-formed element from each other.

FIG. 36 is a process drawing of picking up a resin forming element.

FIG. 37 is a process drawing of mounting a resin forming element on a substrate.

FIG. 38 is a diagram showing a state in which an insulating layer is formed.

FIG. 39 is a diagram showing a state in which wiring is provided to the light emitting diode.

[Explanation of symbols]

1 element formation substrate, 2 light emitting diode, 3 upper electrode,
4 element isolation groove, 5 resin layer, 6 adhesive layer, 7 first temporary holding member, 8 UV light, 9 laser light, 10 element isolation groove, 11 release material layer, 12 first substrate, 13 resin forming chip , 14 light, 15 second temporary holding member, 16
Release layer, 17 resin part, 18 light, 19 back electrode, 20
Adhesive layer, 21 Second substrate, 22 Laser light, 23 Protective layer, 24 Via hole, 25 Protective layer, 26 Via hole, 27 Electrode pad, 30 First substrate, 31 Temporary holding member, 32 chip, 33 resin, 34 resin Forming chip, 35 second substrate, 40 resin forming chip, 41 element, 42 resin, 43, 44 electrode pad, 51 underlying growth layer, 52 GaN layer, 54 GaN layer, 55 p electrode,
56n electrode, 61 first substrate, 62 light emitting diode, 6
2 g groove, 63 adhesive layer, 64 release layer, 65 first temporary holding member, 66 UV light, 67 release surface, 69 dicing groove, 71 second substrate, 72 release material layer, 73 light,
74 resin-formed chip, 75 adhesive layer, 76 release layer,
77 second temporary holding member, 78 light, 79 peeling surface, 8
0 peeling surface, 81 cathode electrode pad, 81 electrode pad, 90 adhesive layer, 91 substrate, 92 light, 93 upper electrode, 94 anode electrode pad, 95 element separation groove, 96
Resin forming element, 103 adsorption device, 104 adsorption chamber, 105 adsorption hole, 110 substrate, 113 energy beam, 116 adhesive layer, 117 insulating layer,
117 electrode layer, 118 black chrome layer, 119 insulating layer, 125 via hole, 133 wiring

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 5C094 AA32 AA43 AA44 BA23 CA19                       DA13 DB01 FA10 GB01                 5F041 AA42 CA40 CA46 CA65 CA76                       CA77 CA98 DA20 DB08 FF06                 5G435 AA17 BB04 CC09 EE12 KK05                       LL01

Claims (21)

[Claims] 1. A method of manufacturing an element, comprising forming a resin portion around a chip arranged on the surface of a release material layer, and peeling the chip together with the resin portion from the release material layer. 2. The method for manufacturing an element according to claim 1, wherein the surface of the release material layer is flat. 3. The method of manufacturing an element according to claim 1, wherein the release material layer is formed of a silicone resin. 4. The method for manufacturing an element according to claim 1, wherein the release material layer is formed on a substrate. 5. The method of manufacturing an element according to claim 1, wherein the resin forming the resin portion is an adhesive. 6. The method for manufacturing an element according to claim 1, wherein the chip is peeled together with the resin portion from the release material layer after the resin portion is adhered to the temporary holding member. 7. The method of manufacturing an element according to claim 6, wherein the resin portion is bonded to the temporary holding member via a release layer. 8. The method of manufacturing an element according to claim 1, wherein an electrode or a wiring is formed on the peeled surface of the chip. 9. The method of manufacturing an element according to claim 8, wherein the electrode or the wiring is formed over the peeled surface of the chip and the peeled surface of the resin portion. 10. The method of manufacturing an element according to claim 5, wherein the adhesive is a thermosetting adhesive or a photocurable adhesive. 11. The method for manufacturing an element according to claim 6, wherein the temporary holding member is a sapphire substrate. 12. The method for manufacturing an element according to claim 1, wherein the chip is a light emitting element. 13. The method of manufacturing an element according to claim 12, wherein the light emitting element is a light emitting diode. 14. The method of manufacturing an element according to claim 4, wherein the substrate has a coefficient of thermal expansion substantially equal to that of the temporary holding member. 15. The method of manufacturing an element according to claim 14, wherein the substrate is formed of soda lime glass. 16. A method of arranging an element for rearranging a plurality of chips arranged on a first substrate on a second substrate, wherein a state in which the chips are spaced apart from a state in which the chips are arranged on the first substrate is provided. A first transfer step of transferring the chip so that the temporary holding member holds the chip, and a step of further separating the chip held by the temporary holding member and transferring the chip onto the second substrate. And, in at least one of the first transfer step and the second transfer step, to form a resin portion around the chip arranged on the surface of the release material layer, the chip and the resin portion from the release material layer. A method for arranging elements, which comprises peeling. 17. A method of manufacturing an image display device in which light-emitting elements are arranged in a matrix, wherein the light-emitting elements are transferred so that the light-emitting elements are spaced apart from the light-emitting elements arranged on the first substrate. A first transfer step of holding the light emitting element on the temporary holding member, and a second transfer step of further separating the light emitting element held on the temporary holding member and transferring the light emitting element onto the second substrate. In at least one of the first transfer step and the second transfer step, a resin portion is formed around the light emitting element arranged on the surface of the release material layer, and the light emitting element and the resin portion are separated from the release material layer. A method of manufacturing an image display device, comprising: 18. The method for manufacturing an image display device according to claim 17, wherein the light emitting element is formed of a nitride semiconductor. 19. The method of manufacturing an image display device according to claim 18, wherein the nitride semiconductor has a tilted crystal plane tilted with respect to the main surface of the element formation substrate. 20. The method of manufacturing an image display device according to claim 19, wherein the tilted crystal plane is an S plane. 21. The method of manufacturing an image display device according to claim 17, wherein the light emitting element is a light emitting diode.