JP2003077904A5

JP2003077904A5 -

Info

Publication number: JP2003077904A5
Application number: JP2002155500A
Authority: JP
Filing date: 2002-05-29
Publication date: 2005-06-02
Anticipated expiration: 2017-02-28

Description

【発明の名称】プラズマ処理装置 Patent application title: PLASMA PROCESSING APPARATUS

【００３０】
本発明の特徴は、真空処理室と、該真空処理室内に設置され、相対向し一方の電極が絶縁膜を有する試料を保持し得る試料台を兼ねる一対の電極と、該一対の電極を含むプラズマ生成手段と、前記試料台を兼ねる一方の電極に設けられ、前記試料の裏面との間に伝熱ガスが供給される静電吸着膜と、前記真空処理室を減圧する減圧手段とを有するプラズマ処理装置において、前記真空処理室のガス圧力を 0.5 〜 4.0Pa にするための手段と、前記一対の電極間に 30 ＭＨｚないしは 200 ＭＨｚの高周波電力を印加する高周波電源と、前記一対の電極の間隙を 30 ｍｍないし 100 ｍｍとし、該一対の電極の他方の電極に設けられた電極カバーと、前記電極カバーに設けられた複数の細孔を有し、前記真空処理室にフッ素を含むエッチングガスを導入するガス導入手段と、前記一方の電極に接続されたプラズマ中のイオンを加速するための電源と、を備えたことにある。[0030]
A feature of the present invention includes a vacuum processing chamber, a pair of electrodes disposed in the vacuum processing chamber and facing each other and serving as a sample stage capable of holding a sample having an insulating film, and the pair of electrodes It has plasma generation means, an electrostatic adsorption film provided on one of the electrodes that doubles as the sample table and with which the heat transfer gas is supplied between the back surface of the sample and pressure reduction means for reducing the pressure in the vacuum processing chamber. In a plasma processing apparatus, a means for setting the gas pressure in the vacuum processing chamber to 0.5 to 4.0 Pa , a high frequency power supply for applying a high frequency power of 30 MHz or 200 MHz between the pair of electrodes, and a pair of electrodes A gap of 30 mm to 100 mm, an electrode cover provided on the other of the pair of electrodes, and a plurality of pores provided on the electrode cover, and an etching gas containing fluorine in the vacuum processing chamber To introduce gas And guide means, in that and a power supply for accelerating ions in said which is connected to one electrode plasma.

【００３１】
本発明の特徴は、真空処理室と、該真空処理室内に設置され、相対向し一方の電極が絶縁膜を有する口径 300mm 以上の試料を保持し得る試料台を兼ねる一対の電極と、該一対の電極を含むプラズマ生成手段と、前記試料台を兼ねる一方の電極に設けられ、前記試料の裏面との間に伝熱ガスが供給される静電吸着膜と、前記真空処理室を減圧する減圧手段とを有するプラズマ処理装置において、前記真空処理室のガス圧力を 0.5 〜 4.0Pa にするための手段と、前記一対の電極に 30 ＭＨｚないしは 200 ＭＨｚの高周波電力を印加し前記導入されたガスをプラズマ化する高周波電源と、前記一対の電極の間隙を 30 ｍｍないし 60 ｍｍとし、該一対の電極の他方の電極に設けられた電極カバーと、前記電極カバーに設けられた複数の細孔を有する、前記真空処理室にフッ素を含むエッチングガスを導入するガス導入手段と、前記一方の電極に接続されたプラズマ中のイオンを加速するための電源と、を備えたことにある。 [0031]
A feature of the present invention is a vacuum processing chamber, a pair of electrodes disposed in the vacuum processing chamber and serving as a sample stage capable of holding a sample with a diameter of 300 mm or more opposite to each other and having one insulating film. An electrostatic adsorption film provided on one of the electrodes serving also as the sample table, the heat generation gas being supplied between the back surface of the sample, and the reduced pressure reducing pressure in the vacuum processing chamber Means for setting the gas pressure in the vacuum processing chamber to 0.5 to 4.0 Pa , and applying a high frequency power of 30 MHz to 200 MHz to the pair of electrodes to introduce the introduced gas. It has a high frequency power source to be converted to plasma, a gap between the pair of electrodes of 30 mm to 60 mm, an electrode cover provided on the other electrode of the pair of electrodes, and a plurality of pores provided on the electrode cover , The vacuum processing A gas introduction means for introducing an etching gas containing fluorine into the chamber, and a power supply for accelerating ions in the plasma connected to the one electrode are provided.

【００３２】
本発明の特徴は、真空処理室と、該真空処理室内に設置され、相対向し一方の電極が絶縁膜を有する口径 300mm 以上の試料を保持し得る試料台を兼ねる一対の電極と、該一対の電極を含むプラズマ生成手段と、前記試料台を兼ねる一方の電極に設けられ、前記試料の裏面との間に伝熱ガスが供給される静電吸着膜と、前記真空処理室を減圧する減圧手段とを有するプラズマ処理装置において、前記真空処理室のガス圧力を 0.5 〜 4.0Pa にするための手段と、前記一対の電極に 30 ＭＨｚないしは 200 ＭＨｚの高周波電力を印加し前記導入されたガスをプラズマ化する高周波電源と、前記一対の電極の間隙を 30 ｍｍないし 60 ｍｍとし、該一対の電極の他方の電極に設けられた電極カバーと、前記電極カバーに設けられた複数の細孔を有し、前記真空処理室にフッ素を含むエッチングガスを導入するガス導入手段と、前記一方の電極に接続されたプラズマ中のイオンを加速するための電源と、前記試料の近傍に位置するＳｉまたはＣを含む材料からなるサセプタカバーを備えたことにある。 [0032]
Feature of the present invention, a vacuum processing chamber, is installed in the vacuum processing chamber, a pair of electrodes also serving as a sample table is opposed to one of the electrodes capable of holding diameter of 300mm or more samples with an insulating film, the An electrostatic adsorption film provided on a plasma generation means including a pair of electrodes and one of the electrodes serving also as the sample table and to which a heat transfer gas is supplied between the back surface of the sample and the vacuum processing chamber In the plasma processing apparatus having the pressure reducing means, the means for setting the gas pressure in the vacuum processing chamber to 0.5 to 4.0 Pa , and the introduced gas by applying high frequency power of 30 MHz to 200 MHz to the pair of electrodes And an electrode cover provided on the other electrode of the pair of electrodes with a gap of 30 mm to 60 mm between the pair of electrodes, and a plurality of pores provided in the electrode cover. The vacuum processing chamber A gas introduction means for introducing an etching gas containing fluorine, a power source for accelerating ions in plasma connected to the one electrode, and a susceptor comprising a material containing Si or C located in the vicinity of the sample It is to have a cover.

Claims

A vacuum processing chamber,
A pair of opposing parallel plate electrodes disposed in the vacuum processing chamber and having an area equal to or larger than an area of a sample having a diameter of 300 mm or more;
A gas introducing means for introducing an etching gas containing at least fluorine and carbon into the vacuum processing chamber;
A high frequency power source for plasma generation which applies high frequency power for generating plasma between the parallel plate electrodes;
And an ion energy control bias power supply connected to the one parallel plate electrode,
One of the pair of opposing parallel plate electrodes also serves as a sample stage capable of holding a sample having a diameter of 300 mm or more having an insulating film,
The plasma etching processing apparatus, wherein the distance between the pair of opposing parallel plate electrodes is set to 4 mm to 50 mm.

A vacuum processing chamber,
A pair of opposing parallel plate electrodes disposed in the vacuum processing chamber and having an area equal to or larger than an area of a sample having a diameter of 300 mm or more;
A gas introducing means for introducing an etching gas containing at least fluorine and carbon into the vacuum processing chamber;
A high frequency power source for plasma generation which applies high frequency power for generating plasma between the parallel plate electrodes;
And an ion energy control bias power supply connected to the one parallel plate electrode,
One of the pair of opposing parallel plate electrodes also serves as a sample stage capable of holding a sample having a diameter of 300 mm or more having an insulating film,
The plasma etching processing apparatus, wherein the distance between the pair of opposing parallel plate electrodes is set to 8 mm to 50 mm.

A vacuum processing chamber,
A pair of opposing parallel plate electrodes disposed in the vacuum processing chamber and having an area equal to or larger than an area of a sample having a diameter of 300 mm or more;
A gas introducing means for introducing an etching gas containing at least fluorine and carbon into the vacuum processing chamber;
A high frequency power source for plasma generation which applies high frequency power for generating plasma between the parallel plate electrodes;
And an ion energy control bias power supply connected to the one parallel plate electrode,
One of the pair of opposing parallel plate electrodes also serves as a sample stage capable of holding a sample having a diameter of 300 mm or more having an insulating film,
The plasma is characterized in that the distance between the pair of opposing parallel plate electrodes is set to 4 mm to 50 mm, the excess fluorine is reduced by the reaction on the surfaces of the both electrodes, and high selectivity is obtained. Etching processing equipment.

A vacuum processing chamber,
A pair of opposing parallel plate electrodes disposed in the vacuum processing chamber and having an area equal to or larger than an area of a sample having a diameter of 300 mm or more;
A gas introducing means for introducing an etching gas containing at least fluorine and carbon into the vacuum processing chamber;
A high frequency power source for plasma generation which applies high frequency power for generating plasma between the parallel plate electrodes;
And an ion energy control bias power supply connected to the one parallel plate electrode,
One of the pair of opposing parallel plate electrodes also serves as a sample stage capable of holding a sample having a diameter of 300 mm or more having an insulating film,
The plasma is characterized in that the distance between the pair of opposing parallel plate electrodes is set to 8 mm to 50 mm, and the excess fluorine is reduced by the reaction on the surfaces of the both electrodes to obtain high selectivity. Etching processing equipment.

The plasma etching processing apparatus according to any one of claims 1 to 4, wherein stable plasma is generated at a gas pressure of 0.5 Pa to 4.0 Pa in the vacuum processing chamber.

The plasma etching apparatus according to any one of claims 1 to 4, wherein a susceptor cover which contains at least silicon or carbon and which removes fluorine is provided on one of the pair of opposing parallel plate electrodes.

The plasma etching apparatus according to any one of claims 1 to 4, wherein an electrode cover which contains at least silicon or carbon and which removes fluorine is provided on the other of the pair of opposing parallel plate electrodes.