JP2003068798A - Semiconductor mounting method and semiconductor mounting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor mounting method which can mount a semiconductor device suppressing deviating at thermocompression bonding and have a fine electrode terminal of a connecting pitch to the substrate and to provide the semiconductor device. SOLUTION: The substrate 1 is moved to a thermocompression bonding position just under a heating means 18 by a moving means 22 which fixes and holds the substrate 1 and the substrate 1 which was moved to the thermocompression bonding position by the moving means 22 is adsorbed and fixed by a fixing portion 20 arranged right under the heating means 18. After this, while the heating means 18 thermocompression-bonds the semiconductor device 4, a position deviation of the substrate 1 in the thermocompression bonding position due to thermal expansion at the thermocompression bonding time can be prevented by releasing a fixing state of the substrate 1 by the moving means 22.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor mounting method and a semiconductor mounting apparatus for mounting a semiconductor device on a substrate, and more particularly to a semiconductor device directly mounted on a substrate via an adhesive.

[0002]

2. Description of the Related Art Conventionally, there is a display device including a display panel in which display pixel electrodes are formed in a matrix such as an EL display panel, a simple matrix type or an active matrix type liquid crystal display panel. Then, in such a device, a transparent substrate such as a glass substrate or a plastic substrate having pixel electrodes in which wirings are formed in a matrix is used as a TA substrate.
Method B (Tape Automated Bondin
g), the TCP (Ta
An anisotropic conductive adhesive film (A) in which conductive particles are dispersed in an insulating adhesive.
CF: Anisotropic Conductive
connection structure using bumps, with bumps I
COG (Chip that connects C chip using ACF)
on-glass) connection structure.

Incidentally, FIG. 5 is a plan view of a liquid crystal panel in which a semiconductor device is connected to a glass substrate by such a COG method. In FIG. 5, 4 and 5 are glass substrates 1.
Is a semiconductor device connected to. In addition, 6 and 7 are flexible wiring boards having a single layer, 8 and 9 are PWBs having a multilayer structure, and 1
Reference numerals 0 and 11 are flexible substrates.

Here, the semiconductor devices 4, 5 are manufactured by the COG method.
When connecting the to the glass substrate 1, first, the semiconductor device 4,
5 and a wiring electrode terminal (not shown) extending around the glass substrate 1 are aligned and positioned relative to each other via the ACF, and then thermocompression bonding is performed by a heating head to connect and fix them. .

By the way, recently, the display pixels of a display device have been made finer, and the number of output terminals of the semiconductor device has been increased accordingly, while the pitch of the connection electrode terminals has become smaller and the bump size of the connection electrode terminals has become smaller. It has become to.

Here, when connecting TCP, normally,
The connection electrode terminals of the board are along the side of the board (X direction)
And the connection electrodes are arranged in a direction perpendicular to the side (Y direction).
Since it is formed in the longitudinal shape, the positional accuracy at the time of alignment and thermocompression bonding can be sufficiently ensured by maintaining the accuracy in the X direction.

However, in the method of connecting the semiconductor devices by the COG method, for example, the input and output electrode terminals of the semiconductor devices are formed on the four sides around the semiconductor devices 4 and 5 or on the opposite two sides as shown in FIG. This electrode terminal 1
The shapes of 2 and 13 are close to squares in order to reduce the size of the semiconductor devices 4 and 5. Therefore, in order to secure the positional accuracy during alignment and thermocompression bonding, it is necessary to maintain the accuracy in both XY directions.

Therefore, in the conventional semiconductor mounting apparatus, for example, the semiconductor device is first held by the heating head face down by suction, and the substrate is fixedly held by suction or the like by a dedicated stage, and then the semiconductor device and the substrate are held together. After recognizing the alignment mark, the XYθ movement is corrected with respect to the pressure bonding head or the stage to align the position, and then the heating head is lowered to perform thermocompression bonding.

The thermocompression bonding is first carried out at a low temperature for a short time so that the semiconductor device is aligned and temporarily fixed to the substrate. After that, the substrate is sucked and fixed by a dedicated stage and conveyed to the pressure bonding position and separately. The semiconductor device was heated and pressed from above by the heating head to perform the main compression bonding.

[0010]

However, in such a conventional semiconductor mounting device, when the semiconductor device is thermocompression bonded to the substrate by the heating head, the peripheral portion of the substrate to be thermocompression bonded is thermally expanded. . Here, during this thermocompression bonding, the substrate is adsorbed and fixed by the dedicated stage, so when the peripheral portion of the substrate thermally expands in this way, the thermocompression bonding portion of the substrate shifts from the thermocompression bonding position. It was a cause of positional displacement when the device was thermocompression bonded. Then, if such a positional deviation occurs, it becomes impossible to mount the semiconductor device having the electrode terminals with a minute connection pitch on the substrate with high accuracy.

Further, the semiconductor device and the substrate are connected by melting and flowing the ACF by heating and pressurizing at the time of thermocompression bonding.
As shown in FIG.
7'is the input and output electrode terminals 12, 13 of the semiconductor device 4.
And the wiring electrode terminals 14 and 15 of the glass substrate 1 are sandwiched between them and the resin is cured. However, when the semiconductor device 4 and the glass substrate 1 are connected to each other by melting and pressing the ACF 16 in this manner, a position shift is likely to occur when a force in the plane direction is applied to the glass substrate 1 during thermocompression bonding. There was a problem.

In order to prevent the displacement of the substrate during such thermocompression bonding, the rigidity of the dedicated stage, the position adjustment drive unit of the dedicated stage, and the dedicated stage transport drive unit is increased, and the pressure of the thermocompression bonding head is further increased. Although it is necessary to increase the rigidity of the drive section, if the rigidity of each section is increased in this way, the weight and cost of the semiconductor mounting device increase and the mounting speed also decreases.

Therefore, the present invention has been made in view of such a situation as described above, and a semiconductor device having electrode terminals with a minute connection pitch is accurately formed on a substrate by preventing positional displacement of the substrate during thermocompression bonding. An object of the present invention is to provide a semiconductor mounting method and a semiconductor mounting device that can be mounted.

[0014]

According to the present invention, an adhesive is provided between a substrate and a semiconductor device, heating means is pressed against the semiconductor device, and the semiconductor device is attached to the substrate through the adhesive. In the method of mounting a semiconductor by thermocompression bonding, the substrate is moved to a position directly below the heating device while the substrate is fixed and held by a moving device, and the semiconductor device is thermocompression bonded to the substrate by the heating device while The substrate is fixed by a fixing portion provided directly below the heating means, and the fixing of the substrate by the moving means is released.

Further, according to the present invention, a semiconductor is provided in which an adhesive is provided between the substrate and the semiconductor device, a heating means is pressed against the semiconductor device, and the semiconductor device is thermocompression bonded to the substrate through the adhesive. In the mounting apparatus, while fixing and holding the substrate, a moving unit that moves the substrate to a thermocompression bonding position directly below the heating unit, and a moving unit that is provided immediately below the heating unit and moves to the thermocompression bonding position by the moving unit. And a fixing unit for fixing the substrate, wherein the moving unit moves the substrate directly below the heating unit, and the fixing unit fixes the substrate while the semiconductor device is thermocompression-bonded to the substrate by the heating unit. While fixing, the fixing of the substrate by the moving means is released.

Further, the present invention is characterized in that the moving means and the fixed portion each include a suction portion for fixing the substrate by suction.

Further, the present invention is characterized in that the fixing portion fixes and holds the substrate while the semiconductor device is thermocompression bonded to the substrate by the heating means.

Further, the present invention is characterized in that the semiconductor device is moved to a thermocompression bonding position together with the substrate by the moving means.

The present invention is also characterized in that the adhesive is an anisotropic conductive adhesive film.

Further, as in the invention, the moving means for fixing and holding the substrate moves the substrate to the thermocompression bonding position directly below the heating means, and the substrate moved to the thermocompression bonding position by the moving means is provided directly below the heating means. Adsorption is fixed by the fixing unit. Then, after that, while the heating unit thermocompresses the semiconductor device, the fixation of the substrate by the moving unit is released to prevent the displacement of the substrate at the thermocompression bonding position due to thermal expansion during thermocompression bonding.

[0021]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a diagram showing a configuration of a semiconductor mounting device according to an embodiment of the present invention, and FIG. 2 is a diagram of the semiconductor mounting device as seen from the direction of arrow B. 1 and 2, the same reference numerals as those in Fig. 5 indicate the same or corresponding portions.

In FIG. 1 and FIG. 2, 18 is a heating head which is a heating means, 19 is a vertical drive unit which raises and lowers the heating head 18, and the heating head 18 is the semiconductor device 4
When the semiconductor device 4 is mounted on the glass substrate 1, the semiconductor device 4 is lowered on the glass substrate 1 by the vertical drive unit 19, and the semiconductor device 4 is mounted on the glass substrate 1.
It is designed to be bonded by an adhesive such as CF.

The heating head 18 is a constant heater head in which a sheathed heater (not shown) is incorporated, and the vertical drive unit 19 includes a head parallel adjustment function (not shown), a vertical coarse movement mechanism by a motor, and a vertical coarse movement mechanism. It has a pressurizing force adjusting air cylinder mechanism and the like. Further, the adhesive is arranged in advance on the glass substrate 1 at the semiconductor device mounting position.

On the other hand, 20 is a crimping pedestal portion which is a fixing portion provided directly below the heating head 18, and 21 is provided on the upper surface of the crimping pedestal portion 20, and the semiconductor device 4 is mounted on the glass substrate 1. At this time, it is an adsorption fixing part which is an adsorption part for adsorbing and fixing the glass substrate 1.

Further, numeral 22 is for adsorbing and fixing the glass substrate 1 by an adsorbing and fixing mechanism portion 23 which is an adsorbing portion, and at the time of mounting the semiconductor device 4 on the glass substrate 1, the glass substrate 1 is thermocompression-bonded directly under the heating head 18. It is a stage that is a moving unit that moves to a position. Here, in the present embodiment,
The semiconductor device 4 has the electrode terminals 14, 15 of the glass substrate 1 in advance.
It is mounted on the glass substrate 1 in a state of being aligned with (see FIG. 7), and is moved to the thermocompression bonding position together with the glass substrate 1 by the stage 22.

In FIG. 1, reference numeral 2A denotes a liquid crystal panel. The liquid crystal panel 2A holds a liquid crystal (not shown) between a pair of glass substrates 1 and 2, and the surfaces of these glass substrates 1 and 2 are polarized. Plates 3 and 3'are arranged. Further, in FIG. 2, reference numeral 4'denotes a semiconductor device which has been pressure bonded.

By the way, in the present embodiment, while the heating head 18 is lowered by the vertical drive unit 19 and the semiconductor device 4 is thermocompression bonded, the suction fixing mechanism portion 23 of the stage 22 releases the suction. I am trying.

By releasing the adsorption in this manner, the glass substrate 1 is subjected to thermocompression bonding by the heating head 18.
Is thermally expanded, and the portion indicated by A in FIG. 1 tends to extend in the direction of the arrow Y, the end portion of the glass substrate 1 on the thermocompression bonding side is adsorbed and fixed to the adsorbing and fixing portion 21 of the press-fitting receiving portion 20, The glass substrate 1 extends on the stage 22 in the direction opposite to the arrow Y. As a result, the displacement of the glass substrate 1 in the Y direction can be prevented.

Next, a mounting method of the semiconductor mounting apparatus having such a structure will be described.

First, the semiconductor device 4 is mounted on the glass substrate 1 in alignment with the electrode terminals 14 and 15 (see FIG. 7) of the glass substrate 1. Here, at the time of this alignment, the alignment is performed while the glass substrate 1 is suction-fixed by the suction-fixing mechanism portion 23 of the stage 22. After the alignment is completed, the stage 22 moves to Y as shown in FIG.
In this manner, the semiconductor device 4 and the electrode terminals 14 and 15 of the glass substrate 1 are positioned on the pressure-bonding receiving base portion 20 directly below the heating head 18.

Next, when the semiconductor device 4 and the glass substrate 1 are positioned on the pressure-bonding pedestal portion 20 in this way, the pressure-bonding pedestal portion 20.
The glass substrate 1 is fixed by the suction fixing portion 21 of FIG. 1, and then the heating head 18 is lowered by the vertical drive unit 19 to thermocompress the semiconductor device 4 as shown in FIGS.

At this time, since the suction fixing mechanism 23 of the stage 22 has released the suction, the heating head 1
Even if the glass substrate 1 expands by heating by 8 and tries to expand in the arrow Y direction, the glass substrate 1 slips in the direction opposite to the arrow Y, and the displacement of the electrode terminal portion of the glass substrate 1 in the Y direction does not occur.

After the pressure-bonding is completed in this way, or immediately before the pressure-bonding is completed, the suction-fixing mechanism 23 starts sucking the glass substrate 1 and the suction-fixing part 21 of the pressure-receiving base 20 is released. Then, the stage 22 moves to the next pressure bonding position of the semiconductor device 4, and the above operation is repeated.

Thus, while the heating head 18 thermocompresses the semiconductor device 4, the glass substrate 1 is unfixed by the stage 22, so that the glass substrate 1 at the thermocompression bonding position due to thermal expansion during thermocompression bonding. Positional deviation can be prevented, and thus the semiconductor device 4 having the electrode terminals with a fine connection pitch can be mounted on the glass substrate 1 with high accuracy.

The glass substrate 1 is fixed by the suction-fixing portion 21 of the pressure-bonding pedestal portion 20 as described above, when the glass substrate 1 is positioned on the pressure-bonding pedestal portion 20, the heating head 18 starts pressure-bonding the semiconductor device 4. I'll do it in the meantime.

By fixing the glass substrate 1 at such a timing, it is possible to prevent the glass substrate 1 from being displaced even when it receives a force in the plane direction. Further, since the suction fixing position is close to the pressure bonding position of the semiconductor device 4, the expansion due to the thermal expansion of the glass substrate 1 occurs around the pressure bonding position, so that the positional deviation is further unlikely to occur.

By the way, in the above description, the constitution in which the crimping pedestal portion 20 and the stage 22 are separately provided has been described, but the present invention is not limited to this, and for example, FIG.
When the semiconductor device 4 is thermocompression-bonded by integrally forming the pressure-bonding base 20 and the stage 22 as shown in FIG.
The crimping cradle unit 20 may move together with 2.
Even with such a configuration, it is possible to prevent the positional deviation between the semiconductor device 4 and the substrate electrode terminal due to the thermal expansion of the glass substrate 1.

In the above description, the case of a liquid crystal display device (liquid crystal panel) has been described, but the present invention is not limited to this, and can be applied to a display device having other matrix-shaped pixels. In addition, the substrate is not limited to a transparent substrate made of glass, but is applicable to a substrate made of a base material such as ceramic, plastic, or glass epoxy.

Further, an anisotropic conductive adhesive film is shown as an adhesive for connecting the semiconductor device 4 and the substrate 1, but any member that can be connected by heating can be applied regardless of the adhesive material. Further, the heating head 18 is not limited to the constant heat head, and a pulse heater head or a ceramic heater head for directly supplying an electric current to the metal head may be used.

Furthermore, the semiconductor device 4 is not limited to the case where the semiconductor device 4 and the glass substrate 1 are aligned as described above, and then the heating head 18 press-bonds the ACF 16 as it is and the main press-bonding is performed. After the positions of the glass substrate 1 and the glass substrate 1 are aligned, the semiconductor device 4 is pressure-bonded by the heating head 18 at a low temperature for a short time, and the semiconductor device 4 is aligned and temporarily fixed to the glass substrate 1. The present invention can also be applied to the case where the semiconductor device 4 is conveyed to the above and the semiconductor device 4 is separately heated and pressed from above by the heating head 18 to perform the main compression bonding.

[0042]

As described above, according to the present invention, the moving means moves the substrate to the thermocompression bonding position immediately below the heating means, and while the heating means thermocompresses the semiconductor device, the moving means moves the substrate. By releasing the fixation, it is possible to prevent the displacement of the substrate at the thermocompression bonding position due to the thermal expansion during thermocompression bonding.

As a result, a semiconductor device having electrode terminals with a fine connection pitch can be mounted on the substrate with high accuracy. Further, the rigidity of the heating means and the moving means of the mounting apparatus can be reduced, the weight can be reduced, the cost can be reduced, and the mounting speed can be improved.

[Brief description of drawings]

FIG. 1 is a diagram showing a configuration of a semiconductor mounting device according to an embodiment of the present invention.

FIG. 2 is a diagram of the semiconductor mounting device viewed from a direction of an arrow B.

FIG. 3 is a diagram showing a state in which the semiconductor device and the glass substrate are moved to a pressure-bonding cradle portion directly below a heating head of the semiconductor mounting device.

FIG. 4 is a diagram showing another configuration of the semiconductor mounting device.

FIG. 5 is a plan view of a liquid crystal panel in which a semiconductor device is connected to a glass substrate by a COG method.

FIG. 6 is a plan view of the semiconductor device.

FIG. 7 is a diagram showing a structure in which the semiconductor device is connected to a substrate electrode terminal by an ACF.

[Explanation of symbols]

1, 2 glass substrate 4 Semiconductor device 12, 13 I / O terminals 16 ACF l7,17 'conductive particles 18 heating head 19 Vertical drive unit 20 Crimp cradle 21 Adsorption fixing part 22 stages 23 Adsorption fixing mechanism

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Kenji Shinbori             3-30-2 Shimomaruko, Ota-ku, Tokyo             Non non corporation F term (reference) 5F044 KK02 KK04 KK06 LL09 PP15                       PP19

Claims (6)

[Claims] 1. A method of mounting a semiconductor in which an adhesive is provided between a substrate and a semiconductor device, a heating means is pressed against the semiconductor device, and the semiconductor device is thermocompression bonded to the substrate via the adhesive. In the above, while the substrate is fixedly held by the moving means, the substrate is moved to directly below the heating means, and is provided directly below the heating means while the semiconductor device is thermocompression-bonded to the substrate by the heating means. A method of mounting a semiconductor, characterized in that the substrate is fixed by a fixing portion while the substrate is fixed by the moving means. 2. A semiconductor mounting device in which an adhesive is provided between a substrate and a semiconductor device, a heating means is brought into pressure contact with the semiconductor device, and the semiconductor device is thermocompression-bonded to the substrate via the adhesive. , A moving means for fixing and holding the substrate and moving the substrate to a thermocompression bonding position directly below the heating means, and a substrate provided directly below the heating means and moved to the thermocompression bonding position by the moving means. A fixing unit for fixing the substrate, the moving unit moves the substrate directly below the heating unit, and the fixing unit fixes the substrate while the semiconductor device is thermocompression-bonded to the substrate by the heating unit. The semiconductor mounting device, wherein the fixing of the substrate by the moving means is released. 3. The semiconductor mounting device according to claim 2, wherein the moving unit and the fixing unit each include a suction unit that fixes the substrate by suction. 4. The semiconductor mounting device according to claim 2, wherein the fixing portion holds the substrate while the semiconductor device is thermocompression bonded to the substrate by the heating means. 5. The semiconductor mounting device according to claim 2, wherein the semiconductor device is moved together with the substrate to a thermocompression bonding position by the moving means. 6. The semiconductor mounting device according to claim 2, wherein the adhesive is an anisotropic conductive adhesive film.