JP2003051630A - Magnetoresistance effect device and magnetic head - Google Patents
Magnetoresistance effect device and magnetic headInfo
- Publication number
- JP2003051630A JP2003051630A JP2002144946A JP2002144946A JP2003051630A JP 2003051630 A JP2003051630 A JP 2003051630A JP 2002144946 A JP2002144946 A JP 2002144946A JP 2002144946 A JP2002144946 A JP 2002144946A JP 2003051630 A JP2003051630 A JP 2003051630A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- film
- magnetoresistive effect
- magnetoresistive
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 190
- 230000000694 effects Effects 0.000 title claims abstract description 91
- 230000004907 flux Effects 0.000 claims abstract description 13
- 239000004020 conductor Substances 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 230000005415 magnetization Effects 0.000 claims description 18
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 13
- 230000005294 ferromagnetic effect Effects 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- 229910017112 Fe—C Inorganic materials 0.000 claims description 6
- 239000002885 antiferromagnetic material Substances 0.000 claims description 6
- 239000000696 magnetic material Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 4
- 229910020639 Co-Al Inorganic materials 0.000 claims description 3
- 229910020675 Co—Al Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 15
- 239000010408 film Substances 0.000 description 69
- 229910001339 C alloy Inorganic materials 0.000 description 18
- 239000010409 thin film Substances 0.000 description 18
- 229910000929 Ru alloy Inorganic materials 0.000 description 16
- 238000000034 method Methods 0.000 description 14
- 238000011160 research Methods 0.000 description 11
- 239000006185 dispersion Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000001939 inductive effect Effects 0.000 description 4
- 238000001659 ion-beam spectroscopy Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000005290 antiferromagnetic effect Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000005381 magnetic domain Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 241001385733 Aesculus indica Species 0.000 description 1
- 230000005330 Barkhausen effect Effects 0.000 description 1
- 229910020630 Co Ni Inorganic materials 0.000 description 1
- 229910002440 Co–Ni Inorganic materials 0.000 description 1
- 230000005303 antiferromagnetism Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、高い磁気抵抗効果
を有する多層磁性薄膜を用いた磁気抵抗効果素子に係
り、特に狭トラック化された磁気記録媒体を用い、高密
度記録を達成するための磁気記録再生装置に用いられる
再生用磁気ヘッドに好適な磁気抵抗効果素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive effect element using a multilayer magnetic thin film having a high magnetoresistive effect, and particularly for achieving high density recording by using a narrow track magnetic recording medium. The present invention relates to a magnetoresistive effect element suitable for a reproducing magnetic head used in a magnetic recording / reproducing apparatus.
【0002】[0002]
【従来の技術】高密度磁気記録における再生用磁気ヘッ
ドとして、磁気抵抗効果を用いた磁気ヘッドの研究が進
められている。現在、磁気抵抗効果材料としては、Ni
−20at%Fe合金薄膜が用いられている。しかし、Ni
−20at%Fe合金薄膜を用いた磁気抵抗効果素子は、
バルクハウゼンノイズなどのノイズを示すことが多く、
他の磁気抵抗効果材料の研究も進められている。2. Description of the Related Art As a reproducing magnetic head for high density magnetic recording, a magnetic head utilizing a magnetoresistive effect has been studied. Currently, as the magnetoresistive material, Ni is used.
A -20 at% Fe alloy thin film is used. But Ni
A magnetoresistive element using a -20 at% Fe alloy thin film is
Often shows noise such as Barkhausen noise,
Research on other magnetoresistive materials is also in progress.
【0003】一方、最近、強磁性トンネル現象を利用し
て、絶縁層を介して一対の磁性層が積層されている多層
膜の電気抵抗の変化から磁束を検出する磁気抵抗効果膜
について、プロシーディングス オブ ザ インタナショ
ナル シンポジウム オン フィジックス オブ マグネテ
ィック マテリアルズ、1987年4月8−11、第3
03頁から第306頁〔Proceedings of the Internati
onal Symposium on Physics of Magnetic Materials、
(April 8-11、 1987) pp.303-306〕に報告されている。
ここでは、多層構造としてNi/NiO/Co接合あるい
はAl/Al2O 3/Ni、Co−Al/Al2O3/N
iなどの強磁性トンネル効果を示す多層膜が紹介されて
いる。しかし、いずれの場合においても一対の磁性層間
の接合面積は1mm2程度と広く、かつ抵抗変化率Δρ/
ρが室温で1%前後と小さい。また、この例に示されて
いる素子構造では、微小な磁束変化を分解することがで
きないため、高密度に記録信号が書き込まれた磁気記録
媒体から漏洩する磁束の変化を高感度に検出することは
できないという問題があった。On the other hand, recently, utilizing the ferromagnetic tunnel phenomenon,
A multi-layer in which a pair of magnetic layers are laminated with an insulating layer in between.
Magnetoresistive film that detects magnetic flux from changes in film electrical resistance
About Proceedings of the International
Naru Symposium on Physics of Magnete
Ick Materials, April 8-11, 1987, 3rd
03 to 306 [Proceedings of the Internati
onal Symposium on Physics of Magnetic Materials,
(April 8-11, 1987) pp.303-306].
Here, there is a Ni / NiO / Co junction as a multilayer structure.
Is Al / AlTwoO Three/ Ni, Co-Al / AlTwoOThree/ N
Introduced a multilayer film showing ferromagnetic tunnel effect such as i
There is. However, in any case, a pair of magnetic layers
Bonding area is 1mmTwoWide and resistance change rate Δρ /
ρ is small at around 1% at room temperature. Also shown in this example
With the existing element structure, minute magnetic flux changes can be resolved.
Magnetic recording in which recording signals are written at high density
Sensitive detection of changes in magnetic flux leaking from the medium
There was a problem that I could not.
【0004】[0004]
【発明が解決しようとする課題】上述した従来技術にお
いて、例えばNi/NiO/Co多層膜では、長方形の形
状を持つNi層とCo層を互いに直交させることにより、
すべての電流がNiO層を通過するようにし、強磁性ト
ンネル効果による抵抗変化を効果的に検出している。し
かし、磁気ヘッドへの適用を考えた場合、強磁性のNi
層およびCo層を直交させると、どちらかの磁性層の長
手方向が磁気記録媒体面に対して平行となり、狭い領域
の磁界を検出することに対して不利な素子形状となる。
すなわち、トラック幅の狭い記録信号に対応した磁束変
化を高感度に検出することができないという問題があっ
た。In the above-mentioned prior art, for example, in a Ni / NiO / Co multilayer film, the Ni layer and the Co layer having a rectangular shape are made orthogonal to each other,
All currents are made to pass through the NiO layer, and the resistance change due to the ferromagnetic tunnel effect is effectively detected. However, considering the application to a magnetic head, the ferromagnetic Ni
If the layers and the Co layer are made orthogonal to each other, the longitudinal direction of one of the magnetic layers becomes parallel to the surface of the magnetic recording medium, which is a disadvantageous element shape for detecting a magnetic field in a narrow region.
That is, there has been a problem that the magnetic flux change corresponding to the recording signal having a narrow track width cannot be detected with high sensitivity.
【0005】本発明の目的は、上記従来の磁気抵抗効果
を示す多層膜を磁気ヘッドに適用する場合の問題点を解
消し、狭い領域における微小な磁束の変化を高感度に、
かつ高い分解能で検出できる磁気抵抗効果素子およびそ
れを用いた磁気ヘッドならびに記録再生装置を提供する
ことにある。An object of the present invention is to solve the problems in the case of applying the conventional multilayer film exhibiting the magnetoresistive effect to a magnetic head and to highly sensitively detect a minute change in magnetic flux in a narrow area.
It is another object of the present invention to provide a magnetoresistive effect element capable of detecting with high resolution, a magnetic head using the same, and a recording / reproducing apparatus.
【0006】[0006]
【課題を解決するための手段】本発明者らは、磁性層
に、Al2O3、SiO2、NiO、BNなどの絶縁体ま
たはSi、Ge、GaAsなどの半導体もしくはCrなどの
反強磁性体等よりなる中間層を挿入した多層構造の磁気
抵抗効果膜を用いて形成した磁気抵抗効果素子の形状に
ついて鋭意研究を重ねた結果、上記磁気抵抗効果膜に流
れるすべての電流が上記中間層を必ず通過する形状の素
子構造にして、電極として非磁性金属(導体)を、上記
磁気抵抗効果膜の少なくとも一部に接続した素子構造と
することにより、狭い領域の磁界を高感度に検出できる
磁気抵抗効果素子が構成できることを見い出し、本発明
を完成するに至った。本発明は、例えば上記多層構造の
磁気抵抗効果膜の少なくとも一部を非磁性金属からなる
導体上に形成し、上記磁気抵抗効果膜のすべての磁性層
の膜面方向を、磁気記録媒体面に対してほぼ直角に配置
できる素子構造、すなわち、多層構造の磁気抵抗効果膜
の端面部を磁気記録媒体面に対向させる素子構造とする
ことにより、磁気記録媒体に対向する上記磁気抵抗効果
膜の端面部の磁性層の面積を極めて小さくすることがで
きるので、狭トラック化された高密度磁気記録媒体から
の微小な漏洩磁束の変化を高感度に、かつ高分解能に検
出することができるものである。The inventors of the present invention have found that the magnetic layer has an insulator such as Al 2 O 3 , SiO 2 , NiO and BN or a semiconductor such as Si, Ge and GaAs or an antiferromagnetic material such as Cr. As a result of intensive research on the shape of the magnetoresistive effect element formed by using the magnetoresistive effect film having a multilayer structure in which an intermediate layer made of a body or the like is inserted, all the currents flowing in the magnetoresistive effect film are A magnetic element that can detect a magnetic field in a narrow area with high sensitivity by using an element structure that passes through without fail and a non-magnetic metal (conductor) as an electrode connected to at least a part of the magnetoresistive film. They have found that a resistance effect element can be constructed, and completed the present invention. In the present invention, for example, at least a part of the multi-layered magnetoresistive effect film is formed on a conductor made of a non-magnetic metal, and the film surface direction of all the magnetic layers of the magnetoresistive effect film is set to By providing an element structure that can be arranged substantially at right angles to each other, that is, an element structure in which the end surface portion of the magnetoresistive effect film having a multilayer structure is opposed to the surface of the magnetic recording medium Since the area of the magnetic layer in the portion can be made extremely small, minute changes in the leakage magnetic flux from the high density magnetic recording medium with a narrowed track can be detected with high sensitivity and high resolution. .
【0007】本発明の多層構造を有する磁気抵抗効果膜
として、(1)磁性層に、Al2O 3、SiO2、Ni
O、BNなどの絶縁体またはSi、Ge、GaAsなどの半
導体等よりなる中間層を挿入した多層膜、例えばNi/
NiO/Co、Fe/Ge/Co、Al/Al2O3/Ni、
Co−Al/Al2O3/Ni、Fe−C/SiO2/Fe
−Ru、Fe−C/Al2O3/Co−Ni、Fe−C/A
l2O3/Fe−Ru等の強磁性トンネル効果を利用した
磁性薄膜、(2)磁性層にCrなどの反強磁性体からな
る中間層を挿入した多層膜、例えばFe/Cr等の反強磁
性中間層を用いた磁性薄膜が挙げられるが、本発明の磁
気抵抗効果素子構造には、上記(1)および(2)のい
ずれかのタイプの磁気抵抗効果膜をも好適に用いること
ができる。Magnetoresistive film having a multilayer structure of the present invention
As (1) the magnetic layer, AlTwoO Three, SiOTwo, Ni
Insulator such as O and BN or half such as Si, Ge and GaAs
A multilayer film with an intermediate layer made of a conductor or the like inserted, for example, Ni /
Ni / Co, Fe / Ge / Co, Al / AlTwoOThree/ Ni,
Co-Al / AlTwoOThree/ Ni, Fe-C / SiOTwo/ Fe
-Ru, Fe-C / AlTwoOThree/ Co-Ni, Fe-C / A
lTwoOThreeUtilizing the ferromagnetic tunnel effect such as / Fe-Ru
Magnetic thin film, (2) The magnetic layer is made of antiferromagnetic material such as Cr.
Multilayer film with an intermediate layer inserted, such as antiferromagnetism such as Fe / Cr
Examples of the magnetic thin film using a magnetic intermediate layer include the magnetic thin film of the present invention.
The air resistance effect element structure has the above (1) and (2)
Suitable use of some type of magnetoresistive film
You can
【0008】さらに本発明の磁気抵抗効果素子におい
て、微小な磁束の変化を高感度に検出し、かつ分解能高
く安定した再生出力を得るために、次に示す具体的な技
術手段を用いることができる。
(1)多層構造の磁気抵抗効果膜を形成する一対の磁性
層の片方の保磁力を小さくし、もう一方の磁性層との保
磁力の差を大きくする。
(2)多層構造の磁気抵抗効果膜を形成する一対の磁性
層の磁化容易方向を直交させる。
(3)多層構造の磁気抵抗効果膜を形成する一対の磁性
層の内、少なくとも一方の磁性層の異方性分散角度を1
0°以下とする。
(4)多層構造の磁気抵抗効果膜を形成する一対の磁性
層の内、少なくとも一方の磁性層を単磁区構造とする。
(5)多層構造の磁気抵抗効果膜を形成する一対の磁性
層と絶縁層との積層部分を、透磁率の高い磁性材料で挟
んだ構造とする。Further, in the magnetoresistive effect element of the present invention, in order to detect a minute change in magnetic flux with high sensitivity and obtain a stable reproduction output with high resolution, the following specific technical means can be used. . (1) The coercive force of one of the pair of magnetic layers forming the magnetoresistive film having the multilayer structure is reduced, and the difference of the coercive force from the other magnetic layer is increased. (2) The easy magnetization directions of the pair of magnetic layers forming the magnetoresistive film having the multilayer structure are orthogonal to each other. (3) The anisotropic dispersion angle of at least one of the pair of magnetic layers forming the magnetoresistive film having the multilayer structure is 1
It is set to 0 ° or less. (4) At least one of the pair of magnetic layers forming the multi-layered magnetoresistive film has a single domain structure. (5) The laminated portion of the pair of magnetic layers and the insulating layer forming the multi-layered magnetoresistive film is sandwiched between magnetic materials having high magnetic permeability.
【0009】上述したごとく、多層構造の磁気抵抗効果
膜に流れる電流が、磁気抵抗効果膜を構成する中間層を
必ず通過するような素子構造にして、例えば磁気抵抗効
果膜の少なくとも一部を非磁性金属よりなる導体上に形
成させることにより、狭い領域の磁界が検出できる素子
形状とすることができる。すなわち、上記磁気抵抗効果
膜の少なくとも一部を、電極である非磁性金属よりなる
導体上に形成させることにより、磁気抵抗効果膜を構成
するすべての磁性層の膜面方向を、磁気記録媒体面に対
してほぼ直角に対向する素子構造にすることができる。
このため、磁気記録媒体に対向する磁気抵抗効果膜の端
面部の磁性層の面積を極めて小さくすることができるの
で、狭い領域の磁界を高感度に検出することが可能とな
る。そして、多層構造を持つ磁気抵抗効果膜として、
(1)強磁性トンネル効果を用いた磁性薄膜、あるいは
(2)反強磁性体の中間層を用いた磁性薄膜があるが、
これらはいずれも上記本発明の素子構造に適用すること
ができる。As described above, the element structure is such that the current flowing in the multi-layered magnetoresistive effect film always passes through the intermediate layer forming the magnetoresistive effect film. By forming it on a conductor made of magnetic metal, it is possible to form an element in which a magnetic field in a narrow area can be detected. That is, by forming at least a part of the magnetoresistive effect film on a conductor made of a nonmagnetic metal that is an electrode, the film surface directions of all the magnetic layers forming the magnetoresistive effect film are changed to the magnetic recording medium surface. It is possible to make an element structure that is opposed at a substantially right angle to.
For this reason, the area of the magnetic layer at the end face portion of the magnetoresistive film facing the magnetic recording medium can be made extremely small, so that the magnetic field in a narrow region can be detected with high sensitivity. And as a magnetoresistive film having a multilayer structure,
There are (1) a magnetic thin film using the ferromagnetic tunnel effect, and (2) a magnetic thin film using an antiferromagnetic intermediate layer.
Any of these can be applied to the element structure of the present invention.
【0010】また、本発明の多層構造の磁気抵抗効果膜
を形成する一対の磁性層の内、例えば一方は、媒体から
の漏洩磁界で磁化方向が変化できるようにするため、漏
洩磁界強度程度に保磁力を設定する。また、もう一方の
磁性層は、媒体から漏洩磁界が印加されても磁化方向が
変化しないように、十分保磁力を高く設定する。このよ
うに、一対の磁性層の保磁力を設定することにより、従
来の誘導型の薄膜ヘッド、あるいは磁気抵抗効果型ヘッ
ドを上回る再生出力を得ることができるようになる。ま
た、媒体からの漏洩磁界により磁化方向が変化する磁性
層は、磁化回転がいっせいに起こるように異方性分散角
度を小さくし、かつ単磁区化することが必要となる。こ
の条件を満足すれば再生感度、安定性を向上させること
ができる。また、一対の磁性層と絶縁層により構成され
る多層構造の磁気抵抗効果膜の全膜厚を、媒体に書き込
まれる最短記録ビット長よりも狭め、かつ多層構造の磁
気抵抗効果膜を一対の高透磁率膜で挟み込む構造とする
ことで、再生分解能をいっそう向上させることができ
る。また、多層構造の磁気抵抗効果膜を形成する一対の
磁性層間の接合面積を狭めることで、絶縁層中の欠陥
(ピンホール)の発生確率を小さくして再生感度を一段
と向上させることができる。Further, of the pair of magnetic layers forming the magnetoresistive film having the multi-layered structure of the present invention, for example, one of the magnetic layers has a leakage magnetic field strength of approximately the same so that the magnetization direction can be changed by the leakage magnetic field from the medium. Set the coercive force. The other magnetic layer has a sufficiently high coercive force so that the magnetization direction does not change even when a leakage magnetic field is applied from the medium. By thus setting the coercive force of the pair of magnetic layers, it becomes possible to obtain a reproduction output that exceeds that of the conventional inductive thin film head or magnetoresistive head. Further, in the magnetic layer whose magnetization direction changes due to the leakage magnetic field from the medium, it is necessary to reduce the anisotropic dispersion angle and make it into a single magnetic domain so that the magnetization rotation occurs at the same time. If this condition is satisfied, the reproduction sensitivity and stability can be improved. In addition, the total thickness of the multi-layered magnetoresistive effect film composed of a pair of magnetic layers and insulating layers is narrower than the shortest recording bit length written to the medium, and the multi-layered magnetoresistive effect film is formed into a pair of high-resistivity films. With the structure sandwiched by magnetic permeability films, the reproduction resolution can be further improved. Further, by narrowing the junction area between a pair of magnetic layers forming the magnetoresistive film having a multi-layer structure, the probability of occurrence of defects (pinholes) in the insulating layer can be reduced and the reproduction sensitivity can be further improved.
【0011】[0011]
【発明の実施の形態】以下に本発明の一実施の形態を挙
げ、図面を参照しながらさらに具体的に説明する。
〈実施の形態1〉磁気抵抗効果素子に用いる磁気抵抗効
果膜およびCu電極の作製にはイオンビームスパッタリ
ング装置を用いた。スパッタリングは以下の条件で行っ
た。
イオンガス……Ar
装置内Arガス圧力……2.5×10−2Pa
蒸着用イオンガン加速電圧……400V
蒸着用イオンガンイオン電流……60mA
ターゲット基板間距離……127mm
イオンミリング法により、磁気抵抗効果膜およびCu電
極を素子形状に加工した。基板にはコーニング社製70
59ガラスを用いた。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, one embodiment of the present invention will be described in more detail with reference to the drawings. <Embodiment 1> An ion beam sputtering apparatus was used for producing a magnetoresistive film and a Cu electrode used for a magnetoresistive effect element. Sputtering was performed under the following conditions. Ion gas ...... Ar Ar gas pressure in the apparatus ・ ・ ・ 2.5 × 10 -2 Pa Accelerating voltage of ion gun for vapor deposition ・ ・ ・ 400V Ion current for vapor deposition ・ ・ ・ Ion current ・ ・ ・ 60mA Target substrate distance ・ ・ ・ 127mm Magnetic resistance by ion milling method The effect film and the Cu electrode were processed into a device shape. 70 made by Corning on the board
59 glass was used.
【0012】図1に、本発明の磁気抵抗効果素子の構成
の一例を示す。図1に示す磁気抵抗効果素子の作製プロ
セスを以下に述べる。まず、ガラス基板上にCu薄膜を
イオンビームスパッタリング法で形成し、イオンミリン
グ法により、幅8μm、長さ2mmの長方形のCu電極1に
加工する。加工によって生じた段差は樹脂で平坦化し
た。その上に、イオンビームスパッタリング法により、
膜厚100nmの Fe−1.3at%Ru合金層2、膜厚10
nmのSiO2層3、膜厚100nmのFe−1.0at%C合
金層4を順に積層する。これらの層をイオンミリング法
により、幅5μm、長さ20μmの長方形に加工し、磁気
抵抗効果膜5とする。この加工によって生じた段差は樹
脂で平坦化した。さらに、その上に、Cu薄膜をイオン
ビームスパッタリング法で形成し、幅8μm、長さ2mm
の長方形のCu電極6に加工した。電流は、Cu電極1と
Cu電極6の間に流し、それらの間の電圧変化を測定す
ることにより、電気抵抗変化を検出する。なお、電流は
SiO2層3を通る。FIG. 1 shows an example of the structure of the magnetoresistive effect element of the present invention. The manufacturing process of the magnetoresistive effect element shown in FIG. 1 will be described below. First, a Cu thin film is formed on a glass substrate by an ion beam sputtering method, and is processed into a rectangular Cu electrode 1 having a width of 8 μm and a length of 2 mm by the ion milling method. The step created by the processing was flattened with resin. On top of that, by the ion beam sputtering method,
Fe-1.3 at% Ru alloy layer 2 having a film thickness of 100 nm, film thickness 10
An SiO 2 layer 3 having a thickness of 100 nm and a Fe-1.0 at% C alloy layer 4 having a thickness of 100 nm are sequentially laminated. These layers are processed into a magnetoresistive film 5 by ion milling into a rectangle having a width of 5 μm and a length of 20 μm. The step created by this processing was flattened with resin. Further, a Cu thin film is formed thereon by an ion beam sputtering method, and the width is 8 μm and the length is 2 mm.
To form a rectangular Cu electrode 6. A current is caused to flow between the Cu electrode 1 and the Cu electrode 6, and the change in electric resistance is detected by measuring the change in voltage between them. Note that the current passes through the SiO 2 layer 3.
【0013】ヘルムホルツコイルを用いて、磁気抵抗効
果膜5の長手方向に磁界を印加し、電気抵抗の変化を調
べた。磁界と電気抵抗の変化との関係を図2に示す。図
に示すごとく、磁界の強さによって、素子の電気抵抗が
変化する。最大の抵抗変化率は約1%であった。これ
は、上記の引用文献に記載のNi/NiO/Co多層膜と
ほぼ同程度の値であるが、電気抵抗が最大となる磁界の
値は、本発明の磁気抵抗効果素子の方が低く、磁気ヘッ
ドに適用する場合には極めて有利となる。この電気抵抗
の変化する原因は、以下のように考えられる。磁化曲線
の測定より、 Fe−1.3at%Ru合金層2の保磁力は2
5 Oe、Fe−1.0at%C合金層4の保磁力は8 Oeで
あることがわかった。磁界の大きさを変化させた場合、
8 Oeのところで、Fe−1.0at%C合金層4の磁化の
向きは変化するが、Fe−1.3at%Ru合金層2の磁化
の向きは変化しない。25 Oe以上の磁界を印加した時
に、Fe−1.3at%Ru合金層2の磁化の向きは変化す
る。したがって、±8〜25Oeの磁界では、Fe−1.
0at%C合金層4の磁化の向きとFe−1.3at%Ru合
金層2の磁化の向きは、互に反平行である。また、この
磁界の範囲以外では、磁化の向きは平行となる。SiO
2層3をトンネル電流が流れる場合、上記磁性層の磁化
の向きが互に反平行である時より、磁化の向きが平行で
ある時の方がコンダクタンスは高くなる。このため、磁
界の大きさによって素子の電気抵抗が変化するものと考
えられる。Using a Helmholtz coil, a magnetic field was applied in the longitudinal direction of the magnetoresistive effect film 5 to examine the change in electric resistance. The relationship between the magnetic field and the change in electrical resistance is shown in FIG. As shown in the figure, the electric resistance of the element changes depending on the strength of the magnetic field. The maximum resistance change rate was about 1%. This is almost the same value as the Ni / NiO / Co multilayer film described in the above cited document, but the value of the magnetic field at which the electric resistance is maximum is lower in the magnetoresistive effect element of the present invention. This is extremely advantageous when applied to a magnetic head. The cause of this change in electrical resistance is considered as follows. From the measurement of the magnetization curve, the coercive force of Fe-1.3 at% Ru alloy layer 2 is 2
It was found that the coercive force of the 5 Oe, Fe-1.0 at% C alloy layer 4 was 8 Oe. When the magnitude of the magnetic field is changed,
At 8 Oe, the magnetization direction of the Fe-1.0 at% C alloy layer 4 changes, but the magnetization direction of the Fe-1.3 at% Ru alloy layer 2 does not change. When a magnetic field of 25 Oe or more is applied, the magnetization direction of the Fe-1.3 at% Ru alloy layer 2 changes. Therefore, in the magnetic field of ± 8 to 25 Oe, Fe-1.
The magnetization direction of the 0 at% C alloy layer 4 and the magnetization direction of the Fe-1.3 at% Ru alloy layer 2 are antiparallel to each other. Moreover, the directions of magnetization are parallel except in this magnetic field range. SiO
When a tunnel current flows through the two layers 3, the conductance is higher when the magnetization directions of the magnetic layers are parallel to each other than when the magnetization directions of the magnetic layers are antiparallel to each other. Therefore, it is considered that the electric resistance of the element changes depending on the magnitude of the magnetic field.
【0014】次に、従来の形状を持つ強磁性トンネル素
子を形成した。これは、図12に示すように、幅5μ
m、膜厚100nmのFe−1.3at%Ru合金層2、膜厚1
0nmのSiO2層3、幅5μm、膜厚100nmのFe−1.
0at%C合金層4により構成した。Fe−1.3at%Ru
合金層2とFe−1.0at%C合金層4は、互に、直交し
ている。Next, a ferromagnetic tunnel element having a conventional shape was formed. This has a width of 5μ, as shown in FIG.
Fe-1.3at% Ru alloy layer 2 having a thickness of 100 m and a thickness of 100 nm, a thickness of 1
0 nm SiO 2 layer 3, Fe-1.
It was composed of 0 at% C alloy layer 4. Fe-1.3at% Ru
The alloy layer 2 and the Fe-1.0 at% C alloy layer 4 are orthogonal to each other.
【0015】上記従来の形状を持つ磁気抵抗効果素子
は、使用する磁性層が、先に述べた本発明の磁気抵抗効
果素子(図1)と同じであるため、磁界の大きさによる
電気抵抗変化は、図1の素子とほぼ同様であった。これ
らの素子により、磁気記録媒体からの磁界を検出する場
合、本発明の磁気抵抗効果素子(図1)では、幅5μ
m、長さ20μmの長方形の磁気抵抗効果膜5の端部を磁
気記録媒体に対向させることにより、トラック幅5μm
の記録を読むことができる。しかし、従来の形状を持つ
磁気抵抗効果素子(図12)では、磁気抵抗効果に強く
関与するトンネル接合部7はFe−1.0at%C合金層4
およびFe−1.3at%Ru合金層2の中央部にあり、磁
気記録媒体に対向させることができない。In the magnetoresistive effect element having the above-mentioned conventional shape, since the magnetic layer used is the same as the magnetoresistive effect element of the present invention described above (FIG. 1), the electric resistance change depending on the magnitude of the magnetic field. Was almost the same as the device of FIG. When the magnetic field from the magnetic recording medium is detected by these elements, the magnetoresistive element of the present invention (FIG. 1) has a width of 5 μm.
A track width of 5 μm is obtained by making the end portion of a rectangular magnetoresistive film 5 having a length of 20 μm and a magnetic recording medium face each other.
You can read the record. However, in the magnetoresistive effect element having the conventional shape (FIG. 12), the tunnel junction portion 7 that strongly participates in the magnetoresistive effect has the Fe-1.0 at% C alloy layer 4
And Fe-1.3 at% Ru alloy layer 2 in the central portion, and cannot face the magnetic recording medium.
【0016】そこで、図13に示す従来の構造の磁気抵
抗効果素子を形成した。これは、幅5μm、膜厚100n
mのFe−1.3at%Ru合金層2、膜厚10nmのSiO2
層3、幅5μm、膜厚100nmのFe−1.0at%C合金
層4により構成した。Fe−1.0at%C合金層4は、ト
ンネル接合部7で切断されており、トンネル接合部7を
磁気記録媒体に対向させることができる。しかし、図1
3構造では、Fe−1.3at%Ru合金層2の長手方向も
磁気記録媒体に対向して、磁気記録媒体からの漏洩磁界
の影響を受ける。したがって、Fe−1.0at%C合金層
4の幅を5μmとしても、実効トラック幅は、5μmより
もはるかに大きくなってしまう。Therefore, a magnetoresistive effect element having a conventional structure shown in FIG. 13 was formed. This has a width of 5 μm and a film thickness of 100 n
Fe-1.3 at% Ru alloy layer 2 of m, SiO 2 of 10 nm thickness
The layer 3 was composed of a Fe-1.0 at% C alloy layer 4 having a width of 5 μm and a film thickness of 100 nm. The Fe-1.0 at% C alloy layer 4 is cut at the tunnel junction 7 so that the tunnel junction 7 can face the magnetic recording medium. However,
In the three-structure, the Fe-1.3 at% Ru alloy layer 2 also faces the magnetic recording medium in the longitudinal direction and is affected by the leakage magnetic field from the magnetic recording medium. Therefore, even if the width of the Fe-1.0 at% C alloy layer 4 is 5 μm, the effective track width is much larger than 5 μm.
【0017】以上説明したように、本発明の素子構造の
ごとく、磁気抵抗効果膜の少なくとも一部を非磁性金属
導体上に形成し、流した電流がすべて中間層を通るよう
に、磁気抵抗効果膜を一直線上に重ねて配置する構成と
することにより、磁気抵抗効果膜のすべての磁性層の長
手(膜面)方向を、磁気記録媒体面に対してほぼ直角に
配置する構造にすることができる。このため、磁気記録
媒体に対向する磁気抵抗効果膜の端面部に位置する磁性
層の面積を極めて小さくすることができ、狭い領域の漏
洩磁界を高感度に検出することが可能となる。As described above, as in the element structure of the present invention, at least a part of the magnetoresistive film is formed on the non-magnetic metal conductor, and the magnetoresistive effect is made so that all of the flowing current passes through the intermediate layer. By arranging the films in a straight line, the longitudinal (film surface) direction of all the magnetic layers of the magnetoresistive film can be arranged substantially at right angles to the magnetic recording medium surface. it can. Therefore, the area of the magnetic layer located on the end face portion of the magnetoresistive film facing the magnetic recording medium can be made extremely small, and the leakage magnetic field in a narrow region can be detected with high sensitivity.
【0018】また、本実施の形態では、磁性層として、
Fe−1.3at%Ru合金層2およびFe−1.0at%C合
金層4、中間層として、SiO2層3を用いたが、磁性
層として、他の磁性材料、中間層として他の絶縁材料を
用いても同様の効果があることは言うまでもない。
〈実施の形態2〉実施の形態1と同様の方法で図3に示
す構造の磁気抵抗効果素子を作製した。この磁気抵抗効
果素子の作製手順を以下に述べる。まず、幅8μm、長
さ2mmの長方形のCu電極1の上に、幅5μm、長さ8μ
m、膜厚100nmのFe−1.3at%Ru合金層2を形成す
る。次に、Fe−1.3at%Ru合金層2をすべて覆うよ
うに、SiO2層3を形成する。また、さらに、SiO2
層3をすべて覆うように、幅5μm、膜厚100nmのFe
−1.0at%C合金層4を形成する。電流は、Cu電極1
とFe−1.0at%C合金層4との間に流し、これらの間
の電圧を測定する。In this embodiment, the magnetic layer is
The Fe-1.3 at% Ru alloy layer 2 and the Fe-1.0 at% C alloy layer 4, and the SiO 2 layer 3 as the intermediate layer were used, but other magnetic materials were used as the magnetic layer and other insulating materials were used as the intermediate layer. It goes without saying that the same effect can be obtained by using a material. <Embodiment 2> A magnetoresistive effect element having the structure shown in FIG. 3 was manufactured by the same method as in Embodiment 1. The manufacturing procedure of this magnetoresistive effect element will be described below. First, on a rectangular Cu electrode 1 having a width of 8 μm and a length of 2 mm, a width of 5 μm and a length of 8 μm.
An Fe-1.3 at% Ru alloy layer 2 having a thickness of 100 nm and a thickness of 100 nm is formed. Next, the SiO 2 layer 3 is formed so as to cover the Fe-1.3 at% Ru alloy layer 2 entirely. In addition, further, SiO 2
Fe with a width of 5 μm and a thickness of 100 nm so as to cover the entire layer 3
-1.0 at% C alloy layer 4 is formed. Current is Cu electrode 1
And Fe-1.0 at% C alloy layer 4, and the voltage between them is measured.
【0019】図3に示す磁気抵抗効果素子においても、
流した電流はすべて中間層を通り、効果的に磁気抵抗効
果を利用することができる。また、磁気抵抗効果膜を一
直線上に重ねて配置し、磁気抵抗効果膜の端面部のすべ
ての磁性層の長手(膜面)方向を、磁気記録媒体面に対
して直角とすることができる。このため、磁気記録媒体
に対向する磁気抵抗効果膜の端面部の磁性層の面積を極
めて小さくすることができ、狭い領域の磁界を高感度に
検出することが可能となる。Also in the magnetoresistive effect element shown in FIG.
All the electric currents passed through the intermediate layer can effectively utilize the magnetoresistive effect. Further, the magnetoresistive effect films can be arranged in a straight line so that the longitudinal (film surface) direction of all the magnetic layers at the end face portion of the magnetoresistive effect film is perpendicular to the magnetic recording medium surface. For this reason, the area of the magnetic layer at the end face portion of the magnetoresistive film facing the magnetic recording medium can be made extremely small, and the magnetic field in a narrow region can be detected with high sensitivity.
【0020】また、図3に示す磁気抵抗効果素子と同様
の効果を持つ素子として、図4に示すような構成も考え
られる。これは、面積の広いCu電極1の上に、Fe−
1.3at%Ru合金層2、SiO2層3、Fe−1.0at%
C合金層4を構成する。Fe−1.3at%Ru合金層2、
SiO2層3、Fe−1.0at%C合金層4はすべて、Cu
電極1上に形成されている。さらに、樹脂等で段差を埋
め、Fe−1.0at%C合金層4に接するように、Cu電
極6を形成する。Further, as an element having the same effect as that of the magnetoresistive effect element shown in FIG. 3, a structure as shown in FIG. 4 can be considered. This is Fe-on the Cu electrode 1 having a large area.
1.3 at% Ru alloy layer 2, SiO 2 layer 3, Fe-1.0 at%
The C alloy layer 4 is formed. Fe-1.3 at% Ru alloy layer 2,
The SiO 2 layer 3 and the Fe-1.0 at% C alloy layer 4 are all Cu.
It is formed on the electrode 1. Further, the Cu electrode 6 is formed so as to fill the step with resin or the like and contact the Fe-1.0 at% C alloy layer 4.
【0021】また、本実施の形態では、磁性層として、
Fe−1.3at%Ru合金層2およびFe−1.0at%C合
金層4、中間層として、SiO2層3を用いたが、磁性
層として、他の磁性材料、中間層として他の絶縁材料を
用いても同様の効果がある。
〈実施の形態3〉図1に示す磁気抵抗効果素子の磁気抵
抗効果膜5をFe(3nm)/Cr(1nm)多層膜(膜厚1
00nm)で構成した。ヘルムホルツコイルを用いて、磁
気抵抗効果膜5の長手方向に磁界を印加し、電気抵抗の
変化を調べた。本実施の形態の素子においても、磁界の
強さによって、素子の電気抵抗が変化し、最大の抵抗変
化率は約10%であった。
〈実施の形態4〉本実施の形態では本発明による磁気抵
抗効果素子を用いた再生用磁気ヘッドの作製方法、抵抗
変化率を測定した結果、ならびに実際に磁気記録媒体に
書き込まれた記録信号を読み出す際の再生感度を、従来
の磁気抵抗効果型(MR)ヘッドおよび誘導型の薄膜ヘ
ッドと比較した結果について述べる。In this embodiment, the magnetic layer is
The Fe-1.3 at% Ru alloy layer 2 and the Fe-1.0 at% C alloy layer 4, and the SiO 2 layer 3 as the intermediate layer were used, but other magnetic materials were used as the magnetic layer and other insulating materials were used as the intermediate layer. The same effect can be obtained by using a material. <Embodiment 3> The magnetoresistive effect film 5 of the magnetoresistive effect element shown in FIG. 1 is a Fe (3 nm) / Cr (1 nm) multilayer film (film thickness 1
00 nm). Using a Helmholtz coil, a magnetic field was applied in the longitudinal direction of the magnetoresistive effect film 5, and changes in electric resistance were examined. Also in the element of the present embodiment, the electric resistance of the element changed depending on the strength of the magnetic field, and the maximum resistance change rate was about 10%. <Embodiment 4> In the present embodiment, a method of manufacturing a reproducing magnetic head using the magnetoresistive effect element according to the present invention, a result of measuring a resistance change rate, and a recording signal actually written in a magnetic recording medium will be described. The result of comparing the read sensitivity in reading with a conventional magnetoresistive (MR) head and an inductive thin film head will be described.
【0022】図5(a)、(b)、(c)はヘッドの作製方
法を説明するための工程図である。まず、基板8上に、
下部電極9となるCu層をスパッタ法により形成した。
この上に、保磁力Hcの高い材料として、Hc=2000
OeのCo−Ni系の磁性層を厚さ0.1μmスパッタによ
り形成し下部磁極10とする。この下部磁極10は、上
記磁性層をスパッタした後、通常のホトレジスト工程に
より縦3μm、横3μmにパターニングして形成される。
この後、絶縁層11としてAl2O3を、上記と同様の
スパッタ法により50Å成膜する。この後、上部磁極1
2として飽和磁束密度Bs=2.0T、保磁力0.3 O
e、異方性分散角度5°以下のFe系合金よりなる磁性層
をやはりスパッタ法により形成する。本実施の形態にお
いては、上部磁極12としてFe−C合金を用いた。な
お、この磁性層は単磁区化して再生特性を安定化する必
要がある。そのため、上記磁性層中にはBN中間層を挿
入している。この上部磁極12は、縦横ともに2μmの
大きさにパターニングされる。パターニング後、上部磁
極12上にレジスト13を塗布し、スルーホールを形成
する。この後、上部磁極12へ電流を供給するための上
部電極14を形成してプロセスを終了する。5 (a), 5 (b) and 5 (c) are process drawings for explaining a method of manufacturing a head. First, on the substrate 8,
The Cu layer to be the lower electrode 9 was formed by the sputtering method.
On top of this, as a material with a high coercive force Hc, Hc = 2000
The Coe—Ni system magnetic layer of Oe is formed by sputtering with a thickness of 0.1 μm to form the lower magnetic pole 10. The lower magnetic pole 10 is formed by sputtering the above magnetic layer and then patterning it in a length of 3 μm and a width of 3 μm by a normal photoresist process.
Then, Al 2 O 3 is deposited as the insulating layer 11 by 50 Å by the same sputtering method as described above. After this, the upper magnetic pole 1
2, saturation magnetic flux density Bs = 2.0T, coercive force 0.3 O
e, a magnetic layer made of a Fe-based alloy having an anisotropic dispersion angle of 5 ° or less is also formed by the sputtering method. In the present embodiment, Fe-C alloy is used for the top pole 12. It should be noted that this magnetic layer must be made into a single magnetic domain to stabilize the reproducing characteristics. Therefore, the BN intermediate layer is inserted in the magnetic layer. The upper magnetic pole 12 is patterned to have a size of 2 μm in length and width. After patterning, a resist 13 is applied on the top pole 12 to form a through hole. Then, the upper electrode 14 for supplying a current to the upper magnetic pole 12 is formed, and the process is completed.
【0023】このようにして作製した、デバイスのヒス
テリシス特性を図6に示す。図から明らかなごとく、一
対の磁性層の保磁力の差が明瞭に観察されている。この
一対の磁性層の内、保磁力の小さい磁性層は50 Oeで
あり、高い方は400 Oeとなっている。また、50
Oeから400 Oeの範囲では、外部磁界が変化しても
磁性層の磁化量はほとんど変化しておらず、一対の磁性
膜の磁化変化が完全に分離されていることが分かる。な
お、一対の磁性層の保磁力の差は、使用する媒体の保磁
力、飽和磁化により適切な値に設定することにより、外
部磁界に対する再生感度を向上させることができる。ま
た、一様印加磁界に対する抵抗変化を測定した結果を図
7に示す。測定は室温で行なったが抵抗変化率Δρ/ρ
は5%と高い値を示した。なお、一対の磁性層の異方性
のなす角度は90度であるが、外部磁界は保磁力の高い
磁性層の異方性の方向に印加した。The hysteresis characteristics of the device thus manufactured are shown in FIG. As is clear from the figure, the difference in coercive force between the pair of magnetic layers is clearly observed. Among the pair of magnetic layers, the magnetic layer having the smaller coercive force is 50 Oe, and the higher one is 400 Oe. Also, 50
It can be seen that in the range of Oe to 400 Oe, the magnetization amount of the magnetic layer hardly changes even if the external magnetic field changes, and the magnetization changes of the pair of magnetic films are completely separated. The difference in coercive force between the pair of magnetic layers can be set to an appropriate value depending on the coercive force and saturation magnetization of the medium used, so that the reproducing sensitivity to an external magnetic field can be improved. Moreover, the result of measuring the resistance change with respect to the uniformly applied magnetic field is shown in FIG. The measurement was performed at room temperature, but the rate of change in resistance Δρ / ρ
Showed a high value of 5%. Although the angle formed by the anisotropy of the pair of magnetic layers was 90 degrees, the external magnetic field was applied in the anisotropic direction of the magnetic layer having a high coercive force.
【0024】次に、異方性分散角度を70度から徐々に
減少させて抵抗変化率の変化を測定した結果を図8に示
す。この結果、異方性分散角度は小さいほど好ましい結
果の得られることが確かめられた。しかし現状の技術で
は、異方性分散角度は5度程度が限界であり、この時に
抵抗変化率Δρ/ρが5%となる。ただし、異方性分散
角度を10度前後に抑えられれば抵抗変化率を4.8%
以上に設定することができるため、本実施の形態では異
方性分散角度を5度から10度の間に設定している。次
に、試料の一方向を機械研磨により削り落とし、通常の
薄膜ヘッドを研磨面に押し当てて高周波領域における抵
抗変化率も測定した。その結果を、図9に示すが、周波
数30MHzまでは、ほぼフラットな抵抗変化率を示す
ことが確かめられた。Next, FIG. 8 shows the results of measuring the change in resistance change rate while gradually decreasing the anisotropic dispersion angle from 70 degrees. As a result, it was confirmed that the smaller the anisotropic dispersion angle, the more preferable the result. However, in the current technology, the anisotropic dispersion angle is limited to about 5 degrees, and the resistance change rate Δρ / ρ becomes 5% at this time. However, if the anisotropic dispersion angle can be suppressed to around 10 degrees, the rate of resistance change will be 4.8%.
Since it can be set as described above, the anisotropic dispersion angle is set between 5 degrees and 10 degrees in the present embodiment. Next, one direction of the sample was scraped off by mechanical polishing, and a normal thin film head was pressed against the polishing surface, and the resistance change rate in the high frequency region was also measured. The results are shown in FIG. 9, and it was confirmed that the resistance change rate was almost flat up to the frequency of 30 MHz.
【0025】次に、本実施の形態のデバイスを、誘導型
の薄膜ヘッド上に形成させた記録再生分離型ヘッドを試
作して再生特性を測定した。この記録再生分離型ヘッド
の断面構造を図10に示す。ここでは、外部磁界に対す
る分解能を向上させるために、一対の磁性層と非磁性中
間層により形成される多層膜の両側にシールド層15と
16を設けている。このシールド層15、16の間隔は
0.3μmである。この磁気ヘッドを、保磁力2000
Oe、膜厚500Åのスパッタ媒体と組合せて再生特性
を測定し、その結果を誘導型の薄膜ヘッド、MRヘッド
と比較した。図11は、横軸を記録密度、縦軸を単位ト
ラック幅当りの再生出力としてそれぞれのヘッドの再生
感度を比較した結果である。測定はスペーシング0.1
5μmで行ったが、本発明の実施の形態による磁気ヘッ
ドにより得られる再生出力は誘導型ヘッドの2.5倍、
MRヘッドの約1.3倍と高く、またMRヘッドで測定
されるような再生出力変動は全く観測されなかった。Next, the recording / reproducing separated type head in which the device of this embodiment was formed on an inductive type thin film head was prototyped and the reproducing characteristics were measured. The sectional structure of this recording / reproducing separated type head is shown in FIG. Here, in order to improve the resolution with respect to the external magnetic field, the shield layers 15 and 16 are provided on both sides of the multilayer film formed by the pair of magnetic layers and the non-magnetic intermediate layer. The distance between the shield layers 15 and 16 is 0.3 μm. This magnetic head has a coercive force of 2000
The reproduction characteristics were measured in combination with Oe and a sputter medium having a film thickness of 500Å, and the results were compared with those of an induction type thin film head and an MR head. FIG. 11 shows the results of comparing the reproduction sensitivities of the respective heads, with the horizontal axis representing the recording density and the vertical axis representing the reproduction output per unit track width. Measurement is spacing 0.1
The reproduction output obtained by the magnetic head according to the embodiment of the present invention is 2.5 times that of the induction type head.
It was about 1.3 times as high as that of the MR head, and no reproduction output fluctuation as measured by the MR head was observed.
【0026】[0026]
【発明の効果】以上詳細に説明したごとく、磁性層に、
絶縁体または半導体もしくは反強磁性体よりなる中間層
を挿入して形成した多層構造の磁気抵抗効果膜を用いた
本発明の磁気抵抗効果素子において、磁気抵抗効果膜に
流れるすべての電流が上記中間層を必ず通過するような
素子構造にして、磁気抵抗効果膜の少なくとも一部を非
磁性金属よりなる導体上に形成させた素子構造とするこ
とにより、磁気抵抗効果膜のすべての磁性層の膜面方向
を、磁気記録媒体面に対してほぼ直角に配置して磁界を
検出する構造にすることができるので、磁気記録媒体に
対向する磁気抵抗効果膜の端面部の磁性層の面積を極め
て小さくすることができ、狭トラック化された高密度磁
気記録媒体からの狭い領域からの漏洩磁界を高感度に検
出することが可能となる。そして、上記多層構造を持つ
磁気抵抗効果膜には、(1)強磁性トンネル効果を用い
た磁性薄膜、(2)反強磁性中間層を用いた磁性薄膜の
いずれの型の磁気抵抗効果膜にも適用することができ、
本発明の利用価値は極めて広い。As described in detail above, in the magnetic layer,
In a magnetoresistive effect element of the present invention using a multi-layered magnetoresistive effect film formed by inserting an intermediate layer made of an insulator, a semiconductor, or an antiferromagnetic material, all currents flowing through the magnetoresistive effect film have the above-mentioned intermediate value. By making the element structure such that it can pass through the layers without fail, and by forming the element structure in which at least a part of the magnetoresistive effect film is formed on a conductor made of a nonmagnetic metal, the film of all magnetic layers of the magnetoresistive effect film is formed. Since the surface direction can be arranged substantially perpendicular to the surface of the magnetic recording medium to detect the magnetic field, the area of the magnetic layer at the end face portion of the magnetoresistive film facing the magnetic recording medium can be made extremely small. Therefore, it is possible to detect a leakage magnetic field from a narrow region from a narrow track high-density magnetic recording medium with high sensitivity. The magnetoresistive effect film having the above-mentioned multilayer structure can be any type of magnetoresistive effect film including (1) a magnetic thin film using a ferromagnetic tunnel effect and (2) a magnetic thin film using an antiferromagnetic intermediate layer. Can also be applied,
The utility value of the present invention is extremely wide.
【0027】そして、本発明の磁気抵抗効果素子を用い
た再生用磁気ヘッドは、例えばトラック幅が2μm以下
であっても再生出力が安定してS/N比の高い信号の再
生が可能となるので、特に記憶容量が大きくかつデータ
の高速度転送を必要とする磁気ディスク装置用ヘッドと
して極めて有効である。In the reproducing magnetic head using the magnetoresistive element of the present invention, the reproduction output is stable and a signal having a high S / N ratio can be reproduced even if the track width is 2 μm or less. Therefore, it is extremely effective as a head for a magnetic disk device which has a particularly large storage capacity and requires high-speed data transfer.
【図1】本発明の実施の形態1で例示した磁気抵抗効果
素子の構成を示す模式図。FIG. 1 is a schematic diagram showing a configuration of a magnetoresistive effect element exemplified in a first embodiment of the present invention.
【図2】本発明の実施の形態1で例示した磁気抵抗効果
素子の印加磁界と抵抗変化率との関係を示すグラフ。FIG. 2 is a graph showing the relationship between the applied magnetic field and the resistance change rate of the magnetoresistive effect element illustrated in the first embodiment of the present invention.
【図3】本発明の実施の形態2で例示した磁気抵抗効果
素子の構成を示す模式図。FIG. 3 is a schematic diagram showing a configuration of a magnetoresistive effect element exemplified in the second embodiment of the present invention.
【図4】本発明の実施の形態2で例示した磁気抵抗効果
素子の他の構成を示す模式図。FIG. 4 is a schematic diagram showing another configuration of the magnetoresistive effect element exemplified in the second embodiment of the present invention.
【図5】本発明の実施の形態4で例示した磁気抵抗効果
素子の作製プロセスを示す工程図。FIG. 5 is a process diagram showing a manufacturing process of the magnetoresistive effect element exemplified in the fourth embodiment of the present invention.
【図6】図5の工程により作製した磁気抵抗効果素子の
ヒステリシス特性を示すグラフ。FIG. 6 is a graph showing hysteresis characteristics of the magnetoresistive effect element manufactured by the process of FIG.
【図7】図5に示した素子の一様印加磁界に対する抵抗
変化を示すグラフ。7 is a graph showing a resistance change of the element shown in FIG. 5 with respect to a uniform applied magnetic field.
【図8】図5に示した素子の異方性分散角度と抵抗変化
率の関係を示すグラフ。8 is a graph showing the relationship between the anisotropic dispersion angle and the resistance change rate of the device shown in FIG.
【図9】図5に示した素子の周波数と抵抗変化率の関係
を示すグラフ。9 is a graph showing the relationship between frequency and resistance change rate of the device shown in FIG.
【図10】本発明の実施の形態4で例示した記録再生分
離型ヘッドの断面構造を示す模式図。FIG. 10 is a schematic diagram showing a cross-sectional structure of the recording / reproducing separated type head exemplified in the fourth embodiment of the invention.
【図11】図10に示したヘッドの再生特性を従来の誘
導型薄膜ヘッドとMRヘッドと比較して示したグラフ。11 is a graph showing reproduction characteristics of the head shown in FIG. 10 in comparison with a conventional inductive thin film head and an MR head.
【図12】従来の磁気抵抗効果素子の構成を示す模式
図。FIG. 12 is a schematic diagram showing a configuration of a conventional magnetoresistive effect element.
【図13】従来の磁気抵抗効果素子の他の構成を示す模
式図。FIG. 13 is a schematic diagram showing another configuration of a conventional magnetoresistive effect element.
1…Cu電極 2…Fe−1.3at%Ru合金層 3…SiO2層 4…Fe−1.0at%C合金層 5…磁気抵抗効果膜 6…Cu電極 7…トンネル接合部 8…基板 9…下部電極 10…下部磁極 11…絶縁層 12…上部磁極 13…レジスト 14…上部電極 15…シールド層 16…シールド層 17…絶縁層 18…磁束検出部 19…記録コイル 20…記録用磁極 21…磁気記録媒体1 ... Cu electrode 2 ... Fe-1.3 at% Ru alloy layer 3 ... SiO 2 layer 4 ... Fe-1.0 at% C alloy layer 5 ... Magnetoresistive film 6 ... Cu electrode 7 ... Tunnel junction 8 ... Substrate 9 ... lower electrode 10 ... lower magnetic pole 11 ... insulating layer 12 ... upper magnetic pole 13 ... resist 14 ... upper electrode 15 ... shield layer 16 ... shield layer 17 ... insulating layer 18 ... magnetic flux detector 19 ... recording coil 20 ... recording magnetic pole 21 ... Magnetic recording medium
【手続補正書】[Procedure amendment]
【提出日】平成14年6月13日(2002.6.1
3)[Submission date] June 13, 2002 (2002.6.1)
3)
【手続補正1】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】特許請求の範囲[Name of item to be amended] Claims
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【特許請求の範囲】[Claims]
───────────────────────────────────────────────────── フロントページの続き (72)発明者 小山 直樹 東京都国分寺市東恋ケ窪一丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 由比藤 勇 東京都国分寺市東恋ケ窪一丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 高野 公史 東京都国分寺市東恋ケ窪一丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 森脇 英稔 東京都国分寺市東恋ケ窪一丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 鈴木 幹夫 東京都国分寺市東恋ケ窪一丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 二本 正昭 東京都国分寺市東恋ケ窪一丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 釘屋 文雄 東京都国分寺市東恋ケ窪一丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 松田 好文 東京都国分寺市東恋ケ窪一丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 椎木 一夫 東京都国分寺市東恋ケ窪一丁目280番地 株式会社日立製作所中央研究所内 Fターム(参考) 5D034 BA03 BB08 CA06 5E049 AA01 AA04 AA07 BA12 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Naoki Koyama 1-280, Higashi Koikekubo, Kokubunji, Tokyo Central Research Laboratory, Hitachi, Ltd. (72) Inventor Yuu Yuto 1-280, Higashi Koikekubo, Kokubunji, Tokyo Central Research Laboratory, Hitachi, Ltd. (72) Inventor Kimi Takano 1-280, Higashi Koikekubo, Kokubunji, Tokyo Central Research Laboratory, Hitachi, Ltd. (72) Inventor Hidetoshi Moriwaki 1-280, Higashi Koikekubo, Kokubunji, Tokyo Central Research Laboratory, Hitachi, Ltd. (72) Inventor Mikio Suzuki 1-280, Higashi Koikekubo, Kokubunji, Tokyo Central Research Laboratory, Hitachi, Ltd. (72) Inventor Masaaki Nihon 1-280, Higashi Koikekubo, Kokubunji, Tokyo Central Research Laboratory, Hitachi, Ltd. (72) Inventor Fumio Kugiya 1-280, Higashi Koikekubo, Kokubunji, Tokyo Central Research Laboratory, Hitachi, Ltd. (72) Inventor Yoshifumi Matsuda 1-280, Higashi Koikekubo, Kokubunji, Tokyo Central Research Laboratory, Hitachi, Ltd. (72) Inventor Kazuo Shiiki 1-280, Higashi Koikekubo, Kokubunji, Tokyo Central Research Laboratory, Hitachi, Ltd. F-term (reference) 5D034 BA03 BB08 CA06 5E049 AA01 AA04 AA07 BA12
Claims (14)
強磁性体よりなる中間層を挿入して形成した多層構造の
磁気抵抗効果膜を用いた磁気抵抗効果素子において、上
記磁気抵抗効果膜に流れるすべての電流が上記中間層を
通過する構造としたことを特徴とする磁気抵抗効果素
子。1. A magnetoresistive effect element using a magnetoresistive effect film having a multilayer structure formed by inserting an intermediate layer made of an insulator, a semiconductor or an antiferromagnetic material into a magnetic layer, wherein the magnetoresistive effect film is A magnetoresistive effect element having a structure in which all the flowing current passes through the intermediate layer.
膜の少なくとも一部が非磁性金属よりなる導体上に形成
されていることを特徴とする磁気抵抗効果素子。2. A magnetoresistive effect element according to claim 1, wherein at least a part of the magnetoresistive effect film is formed on a conductor made of a nonmagnetic metal.
多層構造の磁気抵抗効果膜を構成する磁性層および中間
層を同一膜面内に積層したことを特徴とする磁気抵抗効
果素子。3. A claim according to claim 1 or 2,
A magnetoresistive effect element comprising a magnetic layer and an intermediate layer constituting a multi-layered magnetoresistive effect film laminated in the same film plane.
1項において、磁気抵抗効果膜が強磁性トンネル効果を
有することを特徴とする磁気抵抗効果素子。4. A magnetoresistive effect element according to claim 1, wherein the magnetoresistive effect film has a ferromagnetic tunnel effect.
ル効果を有する磁気抵抗効果膜は、Ni/NiO/Co、
Fe/Ge/Co、Al/Al2O3/Ni、Co−Al/
Al2O3/Ni、Fe−C/SiO2/Fe−Ru、Fe−
C/Al2O3/Co−Ni、Fe−C/Al2O3/Fe
−Ruのいずれかであることを特徴とする磁気抵抗効果
素子。5. The magnetoresistive film having a ferromagnetic tunnel effect according to claim 4, wherein the magnetoresistive film is Ni / NiO / Co,
Fe / Ge / Co, Al / Al 2 O 3 / Ni, Co-Al /
Al 2 O 3 / Ni, Fe-C / SiO 2 / Fe-Ru, Fe-
C / Al 2 O 3 / Co -Ni, Fe-C / Al 2 O 3 / Fe
A magnetoresistive effect element characterized by being one of -Ru.
1項において、磁気抵抗効果膜が反強磁性材料よりなる
中間層を有する多層膜であることを特徴とする磁気抵抗
効果素子。6. The magnetoresistive effect element according to claim 1, wherein the magnetoresistive effect film is a multilayer film having an intermediate layer made of an antiferromagnetic material. .
よりなる中間層を有する多層膜は、Fe/Cr多層膜であ
ることを特徴とする磁気抵抗効果素子。7. A magnetoresistive effect element according to claim 6, wherein the multilayer film having an intermediate layer made of an antiferromagnetic material is a Fe / Cr multilayer film.
1項記載の磁気抵抗効果素子を用いて、狭トラック化さ
れた高密度磁気記録媒体からの漏洩磁束信号を、高感度
に検出して記録情報を読み取る再生用磁気ヘッドを構成
したことを特徴とする磁気ヘッド。8. A magnetic flux leakage signal from a high-density magnetic recording medium having a narrow track, which is highly sensitive, using the magnetoresistive element according to any one of claims 1 to 7. A magnetic head comprising a reproducing magnetic head for detecting and reading recorded information.
磁気抵抗効果膜の強磁性トンネル現象を利用して、磁気
記録媒体から漏洩する信号磁束を検出する磁気ヘッドに
おいて、上記絶縁層を介して積層される磁性層の保磁力
が異なることを特徴とする磁気ヘッド。9. A magnetic head for detecting a signal magnetic flux leaking from a magnetic recording medium by utilizing a ferromagnetic tunnel phenomenon of a magnetoresistive film composed of magnetic layers laminated with an insulating layer interposed therebetween. A magnetic head characterized in that the coercive force of the magnetic layers laminated via the different layers is different.
なる磁性層は、軟磁性体と硬磁性体からなることを特徴
とする磁気ヘッド。10. The magnetic head according to claim 9, wherein the magnetic layers having different coercive forces are made of a soft magnetic material and a hard magnetic material.
て、絶縁層を介して積層される磁性層の磁化容易方向
が、互にほぼ直交していることを特徴とする磁気ヘッ
ド。11. The magnetic head according to claim 9 or 10, wherein the easy magnetization directions of the magnetic layers laminated with the insulating layer interposed therebetween are substantially orthogonal to each other.
れか1項において、絶縁層を介して積層される磁性層が
多層構造を有することを特徴とする磁気ヘッド。12. A magnetic head according to any one of claims 9 to 11, wherein the magnetic layer laminated with an insulating layer interposed therebetween has a multi-layer structure.
れか1項において、絶縁層を介して積層される磁性層
が、磁気的なシールド材で挟着された構成とすることを
特徴とする磁気ヘッド。13. The magnetic layer according to any one of claims 9 to 12, wherein the magnetic layers laminated via an insulating layer are sandwiched by magnetic shield materials. And a magnetic head.
れか1項記載の再生用磁気ヘッドを用いて、高密度記録
媒体からの漏洩磁束信号を検出して、磁気記録媒体に記
録されている情報の読み取りを行う手段を設けたことを
特徴とする磁気記録再生装置。14. A leakage magnetic flux signal from a high density recording medium is detected by using the reproducing magnetic head according to any one of claims 8 to 13 and recorded on the magnetic recording medium. A magnetic recording / reproducing apparatus provided with means for reading the stored information.
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