JP2003042875A - Package for pressure detecting apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a compact and highly sensitive pressure detecting apparatus capable of accurately detecting external pressure over a long period. SOLUTION: This package for the pressure detecting apparatus is formed by joining a ceramic plate 2 to one main surface of a ceramic substrate 1 in which a semiconductor element 3 is mounted to the other main surface in such a way as to form a sealed space S in-between to the ceramic substrate 1. The other main surface of the ceramic substrate 1 is provided with a frame part 1d surrounding the ceramic plate 2 and higher than the ceramic plate 2.

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pressure detecting device package used for a pressure detecting device for detecting pressure. 2. Description of the Related Art Conventionally, a capacitance type pressure detecting device has been known as a pressure detecting device for detecting pressure. As shown in a sectional view of FIG. 3, for example, a capacitance type pressure sensing device 22 and a package 28 are provided on a wiring board 21 made of a ceramic material or a resin material.
And a semiconductor element 29 for arithmetic operation housed in the computer. The pressure-sensitive element 22 is made of, for example, an electrically insulating material such as a ceramic material.
An insulating substrate 24 having a concave portion to which
An insulating plate 26, which is joined in a flexible state on the upper surface of the insulating substrate 24 so as to form a sealed space between the insulating substrate 24 and the other electrode 25 for forming a capacitance on the lower surface, Each of the electrodes 23 and 25 for forming a capacitance includes an external lead terminal 27 for electrically connecting the electrode to the outside, and each of the capacitances is formed by bending the insulating plate 26 according to an external pressure. The capacitance formed between the forming electrodes 23 and 25 changes. An external pressure can be detected by subjecting this change in capacitance to arithmetic processing by the semiconductor element 29 for arithmetic operation. [0003] However, according to this conventional pressure detecting device, the pressure-sensitive element 22 and the semiconductor element 29 are not provided.
Are individually mounted on the wiring board 21, which increases the size of the pressure detection device and the pressure detection electrode.
The wiring between 23 and 25 and the semiconductor element 29 becomes longer,
There is a problem that the sensitivity is low because an unnecessary capacitance is formed between the long wires. Accordingly, the applicant of the present application has previously filed Japanese Patent Application No. 2000-178.
618, an insulating substrate having a mounting portion on which a semiconductor element is mounted on one main surface; and a plurality of wiring conductors disposed on and inside the insulating substrate and electrically connected to respective electrodes of the semiconductor element. A first electrode for forming a capacitance, which is attached to a central portion of the other main surface of the insulating base and is electrically connected to one of the wiring conductors; An insulating plate joined in a flexible state so as to form a sealed space with the central portion of the main surface; and an inner main surface of the insulating plate is attached to the first main surface so as to face the first electrode. A pressure sensing device package including a second electrode for forming a capacitance electrically connected to another one is proposed. According to the pressure detecting device package,
A first electrode for forming a capacitance is provided on the other main surface of an insulating base having a mounting portion on which a semiconductor element is mounted on one main surface, and a first electrode for forming a capacitance opposing the first electrode. Since the insulating plate having the two electrodes on the inner surface is joined in a flexible state so as to form a sealed space between the insulating plate and the other main surface of the insulating base, the insulating plate is pressure-sensitive to the package containing the semiconductor element. The elements are formed integrally, which makes it possible to reduce the size of the pressure detecting device and to shorten the wiring connecting the electrode for pressure detection and the semiconductor element, thereby reducing unnecessary static electricity generated between these wirings. The capacity can be reduced. However, according to the pressure detecting device package proposed in Japanese Patent Application No. 2000-178618, since the insulating plate is made of a brittle ceramic material, external mechanical shock is applied to the outer peripheral edge of the insulating plate. When done
Small cracks are generated on the outer peripheral edge of the insulating plate, gradually progressing to the center of the insulating plate, and finally the airtightness of the sealed space between the insulating base and the insulating plate is reduced, so that the external There has been a problem that the pressure may not be detected accurately. The present invention has been completed in view of the above-mentioned problems, and has as its object to provide a pressure detection device which is small in size, has high sensitivity, and is capable of accurately detecting external pressure for a long period of time. It is to provide a device. A package for a pressure detecting device according to the present invention comprises a ceramic base having a mounting portion on one side of which a semiconductor element is mounted, and a surface and an interior of the ceramic base. A plurality of metallized wiring conductors to which the respective electrodes of the semiconductor element are electrically connected, and are attached to the center of the other main surface of the ceramic base,
A sealed space is formed between a first metallized electrode for forming a capacitance electrically connected to one of the metallized wiring conductors and a central portion of the other main surface of the ceramic base on the main surface. A ceramic plate joined in a flexible state, and is attached to the inner main surface of the ceramic plate so as to face the first metallized electrode, and is electrically connected to another one of the metallized wiring conductors. A package for a pressure detecting device comprising a second metallized electrode for forming a capacitance, wherein the ceramic base has a frame surrounding the ceramic plate and higher than the ceramic plate on the other main surface. It is characterized by doing. According to the package for a pressure detecting device of the present invention, a frame portion surrounding the ceramic plate and being higher than the ceramic plate is formed on the other main surface of the ceramic base. Is protected from external mechanical impact, thereby effectively preventing the occurrence of minute cracks on the outer peripheral edge of the ceramic plate. Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view illustrating an example of an embodiment of a package for a pressure detection device according to the present invention.
1 is a ceramic base, 2 is a ceramic plate, 3 is a semiconductor element. The ceramic substrate 1 is made of a ceramic material such as a sintered body of aluminum oxide, a sintered body of aluminum nitride, a sintered body of mullite, a sintered body of silicon carbide, a sintered body of silicon nitride, and a glass-ceramic. A laminate comprising
For example, if it is made of an aluminum oxide sintered body, aluminum oxide, silicon oxide, magnesium oxide,
A ceramic raw material powder such as calcium oxide is mixed with an appropriate organic binder, a solvent, a plasticizer, and a dispersant to form a slurry, which is formed into a sheet by using a conventionally known doctor blade method. A plurality of ceramic green sheets were obtained, and thereafter, these ceramic green sheets were subjected to appropriate punching, laminating, and cutting to obtain a green ceramic molded body for the insulating substrate 1 and to reduce the green ceramic green body to about It is manufactured by firing at a temperature of 1600 ° C. The ceramic substrate 1 has a concave portion 1a for accommodating the semiconductor element 3 in the center of the lower surface thereof, and thereby functions as a container for accommodating the semiconductor element 3. The center of the bottom surface of the concave portion 1a is a mounting portion 1b on which the semiconductor element 3 is mounted.
The semiconductor element 3 is sealed by mounting the semiconductor element 3 on the substrate b and filling the recess 1a with a resin sealing material 4 such as an epoxy resin. In this example, the semiconductor element 3 is sealed by filling a resin sealing material 4 in the recess 1a. However, the semiconductor element 3 is provided with a lid made of metal or ceramic on the lower surface of the ceramic base 1 in the recess 1a. May be sealed by joining them so as to close them. A plurality of metallized wiring conductors 5 connected to the respective electrodes of the semiconductor element 3 are led out from the mounting portion 1b. The metallized wiring conductor 5 and the respective electrodes of the semiconductor element 3 are connected to the solder bumps 6 and the like. Each electrode of the semiconductor element 3 and each metallized wiring conductor 5 are electrically connected to each other by being connected via an electrical connection means made of a conductive material, and the semiconductor element 3 is fixed to the mounting portion 1b. In this example, the electrodes of the semiconductor element 3 and the metallized wiring conductors 5 are connected via the solder bumps 6, but the electrodes of the semiconductor element 3 and the metallized wiring conductors 5 are connected to another type of electric wire such as a bonding wire. May be connected by a dynamic connection means. The metallized wiring conductor 5 functions as a conductive path for electrically connecting each electrode of the semiconductor element 3 to an external electric circuit and a first metallized electrode 7 and a second metallized electrode 9 to be described later. Is led out to the lower surface of the outer periphery of the ceramic base 1, and another part is electrically connected to the first metallized electrode 7 and the second metallized electrode 9. The electrodes of the semiconductor element 3 are electrically connected to the metallized wiring conductors 5 via a conductive bonding material 6 and the semiconductor element 3 is sealed with a resin sealing material 4. The semiconductor element 3 housed inside is electrically connected to an external electric circuit by joining a portion led out to the lower surface of the outer periphery of the ceramic base 1 to a wiring conductor of an external electric circuit board via a conductive bonding material such as solder. Will be done. The metallized wiring conductor 5 is made of a metal powder such as tungsten, molybdenum, copper, silver or the like, and is mixed with a metal powder such as tungsten by adding an appropriate organic binder, solvent, plasticizer, dispersant and the like. The metallized paste thus obtained is printed and applied in a predetermined pattern on a ceramic green sheet for the ceramic substrate 1 by employing a conventionally well-known screen printing method, and is fired together with the green ceramic molded body for the ceramic substrate 1 to obtain a ceramic. A predetermined pattern is formed inside and on the surface of the base 1. In order to prevent the metallized wiring conductor 5 from being oxidized and corroded and to improve the bonding between the metallized wiring conductor 5 and a conductive bonding material such as solder, the exposed surface of the metallized wiring conductor 5 is usually formed on the exposed surface. If so, the nickel plating layer having a thickness of about 1 to 10 μm and the thickness of 0.1 to
A gold plating layer of about 3 μm is sequentially applied. A recess 1c for forming a closed space having a depth of about 0.01 to 5 mm is formed at the center of the upper surface of the ceramic substrate 1. The concave portion 1c is for forming a closed space between the concave portion 1c and the ceramic plate 2 as described later, and a first metallized electrode 7 for forming a capacitance is attached to the bottom surface of the concave portion 1c. ing. The first metallized electrode 7 is for forming a capacitance for a pressure-sensitive element together with a second metallized electrode 9 to be described later, and is formed, for example, in a substantially circular pattern. One of the metallized wiring conductors 5a is connected to the first metallized electrode 7 so that the electrode of the semiconductor element 3 is connected to the metallized wiring conductor 5a via an electrical connection means such as a solder bump 6. When connected, the electrode of the semiconductor element 3 and the first metallized electrode 7 are electrically connected. The first metallized electrode 7 is made of metallized metal powder such as tungsten, molybdenum, copper, silver or the like. A suitable organic binder, solvent, plasticizer or dispersant is added to the metal powder such as tungsten and mixed. The metallized paste thus obtained is printed and applied to a ceramic green sheet for the ceramic substrate 1 by employing a conventionally well-known screen printing method, and is fired together with the green ceramic molded body for the ceramic substrate 1 to thereby form recesses in the ceramic substrate 1. 1c is formed in a predetermined pattern on the bottom surface. In addition, in order to prevent the first metallized electrode 7 from being oxidized and corroded, the exposed surface of the first metallized electrode 7
A nickel plating layer having a thickness of about 1 to 10 μm is applied. A frame-shaped first bonding metallization layer 8 is attached over the entire periphery of the concave portion 1c on the upper surface of the ceramic base 1, and the first bonding metallization layer 8 has a lower surface on the lower surface. The ceramic plate 2 having the two metallized electrodes 9 and the second metallized layer 10 for bonding is bonded via a conductive bonding material such as a silver-copper brazing material. One of the metallized wiring conductors 5b is connected to the first bonding metallized layer 8 so that the electrodes of the semiconductor element 3 can be electrically connected to the metallized wiring conductor 5b such as solder bumps 6 or the like. And the second metallized electrode 9 is electrically connected to the electrode of the semiconductor element 3 via the metallized wiring conductor 5b, the first metallized layer 8 for bonding, and the metallized layer 10 for second bonding. It has become. The first bonding metallization layer 8 is made of a metal powder of metal such as tungsten, molybdenum, copper, silver, or the like.
A metallized paste obtained by adding and mixing a solvent, a plasticizer and a dispersant is printed and applied on a ceramic green sheet for the ceramic substrate 1 by employing a conventionally known screen printing method, and this is formed into a green ceramic for the ceramic substrate 1. By firing together with the body, a predetermined frame-shaped pattern is formed around the concave portion 1c on the upper surface of the ceramic base 1. The exposed surface of the bonding metallization layer 8 is usually provided on the exposed surface of the bonding metallization layer 8 in order to prevent the bonding metallization layer 8 from being oxidized and corroded and to strengthen the bonding between the bonding metallization layer 8 and the conductive bonding material. In this case, a nickel plating layer having a thickness of about 1 to 10 μm is applied. A recess 1 is formed on the upper surface of the ceramic base 1.
The ceramic plate 2 is joined so as to form a closed space S with the ceramic plate 2c. The ceramic plate 2 is a substantially flat plate having a thickness of 0.01 to 5 mm and made of a ceramic material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, and a glass-ceramic. It functions as a so-called pressure detection diaphragm that flexes accordingly. The ceramic plate 2 has a thickness of 0.01.
If it is less than 5 mm, its mechanical strength will be small, and the danger of being destroyed when a large external pressure is applied thereto will be great.
If it exceeds m, it becomes difficult to bend under a small pressure, and it becomes unsuitable as a diaphragm for pressure detection. Therefore, the thickness of the ceramic plate 2 is preferably in the range of 0.01 to 5 mm. When such a ceramic plate 2 is made of, for example, an aluminum oxide sintered body, an organic binder, a solvent, and a plastic suitable for ceramic raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide. A ceramic green sheet is obtained by adding and mixing an agent and a dispersing agent to form a slurry and forming this into a sheet by employing a conventionally known doctor blade method.
Thereafter, the ceramic green sheet is subjected to appropriate punching and cutting to obtain a green ceramic molded body for the ceramic plate 2 and to fire the green ceramic molded body at a temperature of about 1600 ° C. . In the center of the lower surface of the ceramic plate 2,
A substantially circular second metallized electrode 9 for forming a capacitance is provided. The second metallized electrode 9 functions as an electrode for forming a capacitance for a pressure-sensitive element together with the first metallized electrode 7 described above. The second metallized electrode 9 is made of metal powder such as tungsten, molybdenum, copper, silver or the like, and is mixed with a metal powder such as tungsten by adding an appropriate organic binder, solvent, plasticizer and dispersant. The metallized paste obtained as described above is printed and applied to a ceramic green sheet for the ceramic plate 2 by employing a conventionally known screen printing method, and is fired together with a green ceramic molded body for the ceramic plate 2 to thereby obtain a lower surface of the ceramic plate 2. Is formed in a predetermined pattern at the center of the. In addition, in order to prevent the second metallized electrode 9 from being oxidized and corroded, a nickel plating layer having a thickness of about 1 to 10 μm is usually applied to the exposed surface of the second metallized electrode 9. . Further, a frame-shaped second bonding metallization layer 10 electrically connected to the second metallization electrode 9 is applied to the outer peripheral portion of the lower surface of the ceramic plate 2. The second metallizing layer 10 for bonding functions as a bonding base metal layer for bonding the ceramic plate 2 to the ceramic base 1,
First bonding metallization layer 8 and second bonding metallization layer 10
Are bonded via a conductive bonding material such as silver-copper brazing, whereby the ceramic plate 2 is bonded to the ceramic base 1 and the metallized wiring conductor 5b and the second metallized electrode 9 are electrically connected. Such a second bonding metallization layer 10 is
Metallization paste made of metal powders such as tungsten, molybdenum, copper, silver, etc., and metallized paste obtained by adding and mixing an appropriate organic binder, solvent, plasticizer, and dispersant to metal powders such as tungsten. Adopted and printed on a ceramic green sheet for the ceramic plate 2, and baked with a green ceramic molded body for the ceramic plate 2 to form a predetermined pattern on the outer peripheral portion of the lower surface of the ceramic plate 2. In addition, on the surface of the second bonding metallization layer 10, to prevent the second bonding metallization layer 10 from being oxidized and corroded, and to improve the bonding between the second bonding metallization layer 10 and the conductive bonding material. Usually, a nickel plating layer having a thickness of about 1 to 10 μm is applied. At this time, the first metallized electrode 7 and the second metallized electrode 9 are opposed to each other with a closed space S formed between the ceramic base 1 and the ceramic plate 2 therebetween. A predetermined capacitance is formed according to the area of the first metallized electrode 7 or the second metallized electrode 9 and the distance between the first metallized electrode 7 and the second metallized electrode 9. When an external pressure is applied to the upper surface of the ceramic plate 2, the ceramic plate 2 bends toward the ceramic base 1 according to the applied pressure, and the distance between the first metallized electrode 7 and the second metallized electrode 9 changes, As a result, the capacitance between the first metallized electrode 7 and the second metallized electrode 9 changes, so that it functions as a pressure-sensitive element that senses a change in external pressure as a change in capacitance. Then, the change in the capacitance is transmitted to the semiconductor element 3 housed in the concave portion 1a via the metallized wiring conductors 5a and 5b, and the magnitude of the external pressure is known by performing arithmetic processing on the semiconductor element 3. be able to. When the distance between the first metallized electrode 7 and the second metallized electrode 9 is less than 0.01 mm at 1 atm, when a large pressure is applied to the ceramic plate 2,
There is a danger that the first metallized electrode 7 and the second metallized electrode 9 will come into contact with each other and the pressure cannot be detected. The capacitance formed between them tends to be small, and the sensitivity for detecting pressure tends to be low. Therefore, the distance between the first metallized electrode 7 and the second metallized electrode 9 is 0.
A range of 01 to 5 mm is preferred. Further, in the present invention, a frame portion 1d surrounding the ceramic plate 2 is formed on the outer peripheral portion of the upper surface of the ceramic base 1. The frame portion 1d functions as a protection member for protecting the outer peripheral edge of the ceramic plate 2 from being directly applied with a mechanical shock from the outside, and is higher than the ceramic plate 2. As described above, according to the pressure detecting device package of the present invention, the ceramic plate 2 surrounds the ceramic plate 2
Since the higher frame portion 1d is formed, even if a mechanical shock is applied from the outside, the shock is not directly applied to the outer peripheral edge of the ceramic plate 2, and therefore the ceramic plate 2 No cracks occur due to impact from the vehicle. As a result, such cracks progress to the center of the ceramic plate 2 and the ceramic substrate 1
The airtightness of the closed space S formed between the ceramic plate 2 and the ceramic plate 2 does not decrease, and it is possible to accurately detect the external pressure over a long period of time. When the thickness of the frame portion 1d is lower than the thickness of the ceramic plate 2 by less than 0.05 mm, there is a risk that a mechanical shock from the outside is directly applied to the outer peripheral edge of the ceramic plate 2 to cause cracks. Tends to increase, while
If it is higher than 0.5 mm, the frame part 1d of such height
The thickness of the package becomes unnecessarily thick to provide
It becomes difficult to reduce the size of the pressure detecting device. Therefore, the thickness of the frame portion 1d is 0.05 to 0.5 than that of the ceramic plate 2.
mm thick is preferred. If the width of the frame portion 1d is less than 0.3 mm, the frame portion 1d is likely to be broken by an external mechanical impact, and it is difficult to properly protect the ceramic plate 2 from the external mechanical impact. On the other hand, 1 mm
Is exceeded, the size of the package increases due to the provision of the frame portion 1d having such a width, which makes it difficult to reduce the size of the pressure detection device. Therefore, the frame portion 1d
Is preferably in the range of 0.3 to 1 mm. Further, when the gap between the frame portion 1d and the ceramic plate 2 is less than 0.1 mm, when the ceramic plate 2 and the ceramic base 1 are joined, the ceramic plate 2
There is a tendency that it is difficult to insert the ceramic plate efficiently, while if it exceeds 1 mm, the danger that a mechanical shock from the outside is directly applied to the outer peripheral edge of the ceramic plate 2 increases. Therefore, the gap between the frame portion 1d and the ceramic plate 2 is preferably in the range of 0.1 to 1 mm. As described above, according to the pressure detecting device package of the present invention, the other main surface of the ceramic base 1 on which the semiconductor element 3 is mounted on one main surface is provided with the first capacitance forming surface. A closed space S is formed between the ceramic base 2 and the ceramic plate 2 provided with one metallized electrode 7 and having a second metallized electrode 9 for capacitance formation facing the first metallized electrode 7 on the inner main surface. Since the bonding is performed in such a flexible state, the container for accommodating the semiconductor element 3 and the pressure-sensitive element are integrated, and as a result, the pressure detection device can be downsized. Further, the first metallized electrode 7 and the second metallized electrode 9 for forming the capacitance are formed.
To the metallized wiring conductor 5 a provided on the ceramic base 1.
5b, the first metallized electrode 7 and the second metallized electrode 9 can be connected to the semiconductor element 3 over a short distance. As a result, these metallized wiring conductors 5a, 5b It is possible to provide a highly sensitive pressure detecting device with a small unnecessary capacitance generated therebetween. Further, since the frame 1d surrounding the ceramic plate 2 and being higher than the ceramic plate 2 is formed on the outer periphery of the upper surface of the ceramic base 1, the ceramic plate 2 is well protected from mechanical shock by the frame 1d. As a result, cracks do not occur in the ceramic plate 2, and the hermeticity of the sealed space S is always maintained, so that the external pressure can be accurately detected for a long period of time. Thus, according to the above-described package for a pressure detecting device, the semiconductor element 3 is mounted on the mounting portion 1b, and each electrode of the semiconductor element 3 is electrically connected to the metallized wiring conductor 5. By sealing the element 3, a highly reliable pressure detection device which is small and has high sensitivity and can accurately detect external pressure over a long period of time. The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention. For example, in one example of the above-described embodiment, a concave portion 1c for forming a closed space S is provided at the center of the upper surface of the ceramic substrate 1, and the ceramic plate 2 is joined to the upper surface of the ceramic substrate 1 to thereby form the concave portion 1c.
Although a closed space S is provided between the ceramic plate 2 and the ceramic plate 2, a concave portion 2 a for forming a closed space S is provided in the center of the lower surface of the ceramic plate 2 as shown in a sectional view in FIG. The closed space S may be provided between the ceramic base 1 and the recess 2a by joining the plate 2 to the upper surface of the ceramic base 1. In the embodiment shown in FIG. 2, portions substantially common to the embodiment shown in FIG. 1 are denoted by the same reference numerals as those used in FIG. 1, and description thereof is omitted. As described above, according to the pressure detecting device package of the present invention, the ceramic substrate having the mounting portion on which the semiconductor element is mounted on one main surface has the other main surface. A first metallized electrode for forming a capacitance is provided, and a ceramic plate having an inner surface having a second metallized electrode for forming a capacitance opposing the first metallized electrode is formed with the other main surface of the ceramic base. The pressure-sensitive element is integrated with the package accommodating the semiconductor element, since the pressure-sensitive element is integrated with the package accommodating the semiconductor element so as to form a sealed space therebetween. As a result, the pressure detection device can be downsized. In addition, since the first metallized electrode and the second metallized electrode for forming the capacitance are connected to the semiconductor element via the metallized wiring conductor provided on the insulating base, the first metallized electrode and the second metallized electrode can be short distance. As a result, an unnecessary capacitance generated between these metallized wiring conductors can be reduced to provide a highly sensitive pressure detecting device. Furthermore, since the other main surface of the ceramic base body surrounds the ceramic plate and has a frame portion higher than the ceramic plate, the ceramic plate is well protected by the frame portion from external mechanical shock. Cracks do not occur in the ceramic plate, and the hermeticity of the sealed space formed between the ceramic substrate and the ceramic plate is always kept good, so that the external pressure can be accurately detected for a long period of time.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing an example of an embodiment of a package for a pressure detecting device according to the present invention. FIG. 2 is a cross-sectional view showing another example of the embodiment of the pressure detection device package of the present invention. FIG. 3 is a sectional view showing a conventional pressure detecting device. [Description of Signs] 1... Ceramic base 1b... Mounting section 1d... Frame section 2... Wiring conductor 7 First metallized electrode 9 Second metallized electrode S Sealed space

Claims (1)

Claims: 1. A ceramic substrate having a mounting portion on one side of which a semiconductor element is mounted, and disposed on the surface and inside of the ceramic substrate, and each electrode of the semiconductor element is provided. A plurality of metallized wiring conductors electrically connected to each other;
A first metallized electrode for capacitance formation, which is attached to the center of the other main surface of the ceramic base and is electrically connected to one of the metallized wiring conductors, and is attached to the other main surface. A ceramic plate joined in a flexible state so as to form a sealed space with the central portion, and is attached to an inner main surface of the ceramic plate so as to face the first metallized electrode, A package for a pressure detection device comprising: a second metallized electrode for forming a capacitance electrically connected to another one of the metallized wiring conductors; A package for a pressure detecting device, comprising a frame surrounding the ceramic plate and having a higher frame portion than the ceramic plate on a surface.