JP2002328349A - Optically responsive material and optically responsive element each using light induced electron transfer reaction - Google Patents
Optically responsive material and optically responsive element each using light induced electron transfer reactionInfo
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- JP2002328349A JP2002328349A JP2001135264A JP2001135264A JP2002328349A JP 2002328349 A JP2002328349 A JP 2002328349A JP 2001135264 A JP2001135264 A JP 2001135264A JP 2001135264 A JP2001135264 A JP 2001135264A JP 2002328349 A JP2002328349 A JP 2002328349A
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- charge transfer
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、金属薄膜表面に形成し
た誘電体薄膜系で観測される表面プラズモン共鳴又は導
波モードを利用した光記録,光変調等に好適な光応答材
料及び光応答素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light-responsive material and a light-responsive material suitable for optical recording and light modulation utilizing surface plasmon resonance or a waveguide mode observed in a dielectric thin film system formed on a metal thin film surface. Related to the element.
【0002】[0002]
【従来技術及び問題点】光照射による可逆的な色変化を
利用して記録素子,変調素子等が従来から作製されてい
る。記録素子は、主として紫外〜可視域での吸収スペク
トルや反射率変化に依存することから読出し光に起因す
る記録の劣化等の欠点がある。変調素子では、熱変化に
基づくため応答が数十ミリ秒〜数秒と非常に遅い。他
方、光誘起電子移動反応を利用した素子や強い蛍光の変
化を伴い可視〜近赤外域で吸収変化するものは少ない。
ところが、将来の高密度光記録や高速光変調等を想定す
ると、波長約400nmの紫色半導体レーザ光の照射に
よって可視又は近赤外域に大きな吸収変化又は蛍光変化
を示す材料及び高速並列処理可能な変調素子の開発が望
まれる。すなわち、光の集光限界は波長に比例し、レン
ズの開口比に反比例するので、光学系が同じであれば短
波長ほど高密度記録が可能になる。しかし、光学部品の
光吸収の問題があり、400nm程度が短波長の実用限
界と考えられている。この点、短波長の光に対しても十
分な応答性を示し、吸収(屈折率の虚数部)や蛍光変化
を起こす物質が提供されると、高密度記録や高速度変調
が実現される。また、将来の超高速並列処理を想定する
と光によって光を二次元的に操ることができ、石英又は
プラスチック光ファイバでの光通信との適合性を考慮す
ると可視〜近赤外域で屈折率が超高速に変化する材料の
開発が望まれる。2. Description of the Related Art Recording elements, modulation elements and the like have been conventionally manufactured by utilizing reversible color change caused by light irradiation. The recording element mainly has a drawback such as deterioration of recording caused by the readout light because the recording element mainly depends on an absorption spectrum or a change in reflectance in an ultraviolet to visible region. The response of the modulation element is very slow, from several tens of milliseconds to several seconds, due to thermal changes. On the other hand, there are few devices utilizing the photoinduced electron transfer reaction and those which absorb and change in the visible to near-infrared region with a strong change in fluorescence.
However, assuming future high-density optical recording and high-speed optical modulation, etc., a material exhibiting a large absorption change or fluorescence change in the visible or near-infrared region by irradiation with a violet semiconductor laser beam having a wavelength of about 400 nm, and a modulation capable of high-speed parallel processing. The development of devices is desired. That is, since the light collection limit is proportional to the wavelength and inversely proportional to the aperture ratio of the lens, the higher the wavelength, the higher the recording density becomes possible with the same optical system. However, there is a problem of light absorption of the optical component, and about 400 nm is considered to be a practical limit of a short wavelength. In this respect, high density recording and high speed modulation can be realized by providing a material that exhibits sufficient responsiveness to short wavelength light and causes absorption (imaginary part of refractive index) and fluorescence change. Also, assuming future ultra-high-speed parallel processing, light can be two-dimensionally manipulated by light. Considering compatibility with optical communication using quartz or plastic optical fibers, the refractive index in the visible to near-infrared region is extremely high. The development of materials that change at high speed is desired.
【0003】[0003]
【課題を解決するための手段】本発明は、このような要
求に応えるべく案出されたものであり、400nm程度
の光で光誘起電子移動反応を生起させ、該光誘起電子移
動反応によって可視〜近赤外域で吸収や蛍光強度を超高
速で変化させ、高密度光記録,高速光変調等が可能な光
機能素子を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been devised in order to meet such a demand, in which a photo-induced electron transfer reaction is caused by light of about 400 nm, and a visible light-induced electron transfer reaction is caused by the photo-induced electron transfer reaction. It is an object of the present invention to provide an optical functional element capable of changing absorption or fluorescence intensity at a very high speed in the near-infrared region and performing high-density optical recording, high-speed optical modulation, and the like.
【0004】本発明の光応答材料は、その目的を達成す
るため、下記一般式で示され、置換ビピリジニウムカチ
オンと対アニオンY-との間にイオン対電荷移動錯体を
形成することを特徴とする。In order to achieve the object, the photoresponsive material of the present invention is represented by the following general formula and is characterized by forming an ion-pair charge transfer complex between a substituted bipyridinium cation and a counter anion Y −. .
【0005】 X:ビピリジニウム基の窒素原子に対して4位又は2位
で結合したチオフェニル基,フリル基,ビチオフェニル
基,ターチオフェニル基,フルオレニル基,ピレニル
基,ペリレニル基又はビニル基 R1,R2:それぞれ独立にアルキル基,ポリ(テトラメ
チレンオキシ)基,ヒドロキシアルキル基,アルケニル
基,アルキニル基,アラルキル基,アリール基又は複素
環基 Y-:クロリド,ブロミド,ヨージド,アニオン性置換
基をもつ芳香族分子,トリフルオロメチル基又は他の電
子吸引性置換基を1個以上有するテトラフェニルホウ酸[0005] X: thiophenyl group, furyl group, bithiophenyl group, terthiophenyl group, fluorenyl group, pyrenyl group, perylenyl group or vinyl group bonded at the 4- or 2-position to the nitrogen atom of the bipyridinium group: R 1 and R 2 respectively independently an alkyl group, a poly (tetramethylene) group, a hydroxyalkyl group, an alkenyl group, an alkynyl group, an aralkyl group, an aryl group or a heterocyclic group Y -: chloride, bromide, iodide, aromatic molecules with anionic substituent Having one or more trifluoromethyl groups or other electron-withdrawing substituents
【0006】イオン対電荷移動錯体としては、たとえば
2,5-ビス(4-ビピリジニウム)チオフェン・ジテトラキス
[3,5-ビス(トリフルオロメチル)フェニル]ボレート塩を
分散状態で含む高分子又は主鎖の一部に有する高分子が
使用される。光応答薄膜は、イオン対電荷移動錯体を主
鎖の一部又は側鎖に有する高分子、或いはイオン対電荷
移動錯体の分散・固定化媒体として作用する高分子を用
いて成膜される。As an ion-pair charge transfer complex, for example,
2,5-bis (4-bipyridinium) thiophene / ditetrakis
A polymer containing [3,5-bis (trifluoromethyl) phenyl] borate salt in a dispersed state or a polymer having a part of the main chain is used. The photoresponsive thin film is formed using a polymer having an ion-pair charge transfer complex in a part or a side chain of a main chain, or a polymer acting as a dispersion / immobilization medium of the ion-pair charge transfer complex.
【0007】光応答材料を蛍光性薄膜として基板上に堆
積し、該蛍光性薄膜の上に酸素遮断高分子膜が更に堆積
することにより光記録素子が作製される。蛍光強度は、
光誘起電子移動反応により一時的又は定常的に変化す
る。光変調素子は、金属薄膜及び光応答薄膜を堆積した
ガラス基板の他面に、内部に透過した被変調光をガラス
基板に対向する面で全反射させる位置関係でプリズムを
配置している。被変調光が前記光応答薄膜中で導波モー
ド条件を形成し、反射率の入射角依存性に急峻な配置で
駆動光源から光応答薄膜に書込み光が照射される。An optical recording element is manufactured by depositing a photoresponsive material as a fluorescent thin film on a substrate and further depositing an oxygen blocking polymer film on the fluorescent thin film. The fluorescence intensity is
It changes temporarily or constantly due to the photoinduced electron transfer reaction. In the light modulation element, a prism is arranged on the other surface of the glass substrate on which the metal thin film and the light-responsive thin film are deposited, in such a positional relationship that the modulated light transmitted through the prism is totally reflected by the surface facing the glass substrate. The modulated light forms a waveguide mode condition in the photoresponsive thin film, and the drive light source irradiates the photoresponsive thin film with the writing light in an arrangement steeply dependent on the incident angle of the reflectance.
【0008】[0008]
【作用】電子受容性ビピリジニウムカチオン化合物は、
分子内運動の構造的な抑制により蛍光性を高めることが
できる。光励起状態は蛍光の発生原因であるものの、分
子内における置換基の移動等、種々の要因によって失活
する。通常のビピリジニウムでは、二つのピリジニウム
基が単結合で結ばれているので、光励起状態を失活させ
る回転運動が生じやすい。これに対し、回転の拘束に有
効な面構造等をもつ基によってピリジニウム基を連結す
ると、回転運動が規制され蛍光性が向上する。この電子
受容性ビピリジニウムカチオン化合物及び対アニオンか
ら形成されたイオン対電荷移動錯体は、光励起によって
アニオンからカチオンに1個の電子が完全に移動する
(光誘起電子移動反応)。光誘起電子移動反応が生じる
と、電子が1個入ったラジカルカチオンが電子受容性ビ
ピリジニウムに生成する。その結果、電子の存在する準
位と空準位間のエネルギー差が低下し、可視〜近赤外域
において大きな吸収変化が生じる。電子移動に起因した
新しい準位の出現のため蛍光性も変化する。光誘起電子
移動後には、ラジカルカチオンからアニオンの酸化体へ
の逆向きの電子移動が生じ、吸収・蛍光変化が元に復帰
する。復帰速度は、ビピリジニウムカチオン及び対アニ
オンの酸化還元電位で定まる。したがって、化学的手法
によってビピリジニウムカチオンと対アニオンの酸化還
元電位を制御することにより、吸収・蛍光変化の応答速
度が制御可能となる。アニオン及びカチオンの酸化還元
電位に応じて逆電子移動速度をピコ秒から無限大まで制
御でき、光記録素子,光変調素子等として好適な光応答
材料が得られる。[Action] An electron-accepting bipyridinium cation compound is
Fluorescence can be enhanced by structural suppression of intramolecular motion. Although the photoexcited state is a cause of the generation of fluorescence, it is deactivated by various factors such as the movement of a substituent in a molecule. In ordinary bipyridinium, since two pyridinium groups are connected by a single bond, a rotational motion that deactivates a photoexcited state is likely to occur. On the other hand, when the pyridinium groups are linked by a group having a surface structure or the like effective for restricting rotation, the rotation is restricted and the fluorescence is improved. In the ion-pair charge transfer complex formed from the electron-accepting bipyridinium cation compound and the counter anion, one electron is completely transferred from the anion to the cation by photoexcitation (photoinduced electron transfer reaction). When the photoinduced electron transfer reaction occurs, a radical cation containing one electron is generated in the electron-accepting bipyridinium. As a result, the energy difference between the level where electrons exist and the empty level decreases, and a large absorption change occurs in the visible to near infrared region. Fluorescence also changes due to the appearance of new levels due to electron transfer. After the photoinduced electron transfer, electron transfer in the reverse direction from the radical cation to the oxidized form of the anion occurs, and the absorption / fluorescence change is restored. The reversion rate is determined by the oxidation-reduction potential of the bipyridinium cation and the counter anion. Therefore, by controlling the oxidation-reduction potential of the bipyridinium cation and the counter anion by a chemical method, the response speed of the absorption / fluorescence change can be controlled. The reverse electron transfer speed can be controlled from picoseconds to infinity according to the oxidation-reduction potential of anions and cations, and a photoresponsive material suitable as an optical recording element, an optical modulation element, or the like can be obtained.
【0009】また、プリズム,金属薄膜,光応答薄膜か
らなる系の導波モード条件が光応答薄膜の複素屈折率変
化に応じて変わり、導波モード条件の変化により読出し
光の反射光強度や位相が変わるため、p-偏光,s-偏光の
双方を光変調に使用できる。光記録素子を作製する場
合、基板11に設けた光応答薄膜12の上に酸素遮断高
分子膜13を積層することにより光記録状態を安定化さ
せる(図1)。酸素遮断高分子膜13としては,酸素透
過率が10-16cm3・cm/cm2・秒・Pa以下のポリビ
ニルアルコール等が好ましい。光記録素子10を書込み
又は読出し用の入射光L1で照射すると、光誘起電子移
動反応が生じ、読出し用の反射光L2及び蛍光L3の強度
が変化する。反射強度及び蛍光強度の双方で読出し可能
なことは、従来の光記録素子との大きな相違点である。Further, the waveguide mode condition of the system composed of the prism, the metal thin film, and the light responsive thin film changes according to the change in the complex refractive index of the light responsive thin film. , Both p-polarized light and s-polarized light can be used for light modulation. When manufacturing an optical recording element, an optical recording state is stabilized by laminating an oxygen-blocking polymer film 13 on a photoresponsive thin film 12 provided on a substrate 11 (FIG. 1). As the oxygen-blocking polymer film 13, polyvinyl alcohol having an oxygen permeability of 10 −16 cm 3 · cm / cm 2 · second · Pa or less is preferable. When an optical recording element 10 is irradiated with incident light L 1 for writing or reading, photoinduced electron transfer reaction occurs, the intensity of the reflected light L 2 and the fluorescence L 3 for reading is changed. The fact that reading is possible with both the reflection intensity and the fluorescence intensity is a major difference from the conventional optical recording element.
【0010】光変調素子としては、ガラス基板21の一
面に金属薄膜22を介して光応答薄膜23を堆積し、他
面にプリズム24を配置した構成が採用される(図
2)。ガラス基板21には、プリズム24と同じ屈折率
のガラス材料が使用される。光応答薄膜22を書込み光
L4で照射した条件下で被変調光L5を入射角θで光変調
素子20に入射させると、書込み光L4による光応答薄
膜22の複素屈折率変化で導波モード条件が大きく変わ
り、広い波長範囲での光変調が可能になる。具体的に
は、4,4-ビピリジニウム塩での光誘起電子移動反応によ
る複素屈折率変化の実数部(Δn)及び虚数部(Δk)
の波長依存性を図3に示す。As the light modulating element, a structure in which a light responsive thin film 23 is deposited on one surface of a glass substrate 21 via a metal thin film 22 and a prism 24 is disposed on the other surface (FIG. 2). A glass material having the same refractive index as the prism 24 is used for the glass substrate 21. When the under conditions photoresponsive thin film 22 was irradiated with writing light L 4 enters the light modulation element 20 at an incident angle θ of the modulated light L 5, guiding the complex refractive index changes in the optical response thin film 22 by the writing light L 4 The wave mode condition changes greatly, and light modulation in a wide wavelength range becomes possible. Specifically, the real part (Δn) and the imaginary part (Δk) of the complex refractive index change due to the photoinduced electron transfer reaction in 4,4-bipyridinium salt
Is shown in FIG.
【0011】[0011]
【実施例】2,5-ジ(4-ピリジル)チオフェン0.30g,
ヘキサデシルブロマイド10gをp-キシレン20mlに
入れ、窒素雰囲気下30時間,100℃で加熱還流し
た。反応によって黄色の沈殿が生成した。反応液を室温
まで冷却した後、沈殿物を吸引濾過した。沈殿物に取り
込まれたヘキサデシルブロマイドを除去するため、ヘキ
サンで沈殿物を繰返し洗浄した。次いで、HPLC(高速液
体クロマトグラフ)を用いて沈殿物を精製した後、ナト
リウムテトラキス[3,5-ビス(トリフルオロメチル)フェ
ニル]ボレート(TFPB-)を用いてメタノール中でイオン
交換することにより、目的低分子2,5-ビス(4-ビピリジ
ニウム)チオフェン・ジテトラキス[3,5-ビス(トリフルオ
ロメチル)フェニル]ボレート塩を得た。EXAMPLE 0.30 g of 2,5-di (4-pyridyl) thiophene,
Hexadecyl bromide (10 g) was placed in p-xylene (20 ml), and the mixture was heated and refluxed at 100 ° C. for 30 hours in a nitrogen atmosphere. The reaction produced a yellow precipitate. After cooling the reaction solution to room temperature, the precipitate was suction-filtered. The precipitate was repeatedly washed with hexane to remove hexadecyl bromide incorporated in the precipitate. Then, after purifying the precipitate using a HPLC (high performance liquid chromatography), sodium tetrakis [3,5-bis (trifluoromethyl) phenyl] borate - by ion-exchange in methanol with (TFPB) Thus, a target low molecular weight 2,5-bis (4-bipyridinium) thiophene ditetrakis [3,5-bis (trifluoromethyl) phenyl] borate salt was obtained.
【0012】十分に無水化したテトラヒドロフラン(TH
F)23mlを窒素置換した三口フラスコに入れ、三口
フラスコを氷水で冷やし、トリフロオロメタンスルホン
酸無水物0.50gを加え、約15分攪拌した。次い
で、ドライアイス・アセトンで−70℃に冷却し、10
mlの無水THFに溶かした2,5-ジ(4-ピリジル)チオフェ
ン0.40gを添加し、約1.5時間攪拌した。攪拌終
了後、反応容器を氷水に漬け、そのままの状態で一晩放
置したところ、黄色の懸濁液になった。懸濁液を水中に
投入し、生成した固体物質を取り出して水で洗浄した
後、減圧乾燥することにより2,5-ビス(4-ピリジニウム)
チオフェンを主鎖の一部に有する目的高分子(光応答材
料)を合成した。また、対アニオンを低分子合成の場合
と同様にイオン交換し、TFPB-塩を得た。[0012] Fully anhydrous tetrahydrofuran (TH
F) 23 ml was placed in a three-necked flask purged with nitrogen, the three-necked flask was cooled with ice water, 0.50 g of trifluoromethanesulfonic anhydride was added, and the mixture was stirred for about 15 minutes. Then, the mixture was cooled to -70 ° C with dry ice / acetone,
0.40 g of 2,5-di (4-pyridyl) thiophene dissolved in ml of anhydrous THF was added and stirred for about 1.5 hours. After the completion of the stirring, the reaction vessel was immersed in ice water, and left as it was overnight, to form a yellow suspension. The suspension is put into water, the produced solid substance is taken out, washed with water, and then dried under reduced pressure to give 2,5-bis (4-pyridinium).
A target polymer (photoresponsive material) having thiophene as a part of the main chain was synthesized. Further, the counter anion was ion-exchanged in the same manner as in the case of the synthesis of a low-molecular compound, to obtain a TFPB - salt.
【0013】高分子の光応答材料を濃度50〜100m
g/mlでTHF, 1,2-ジメトキシエタン又はシクロヘキ
サノンに溶解し、スピンコート法又は溶媒蒸発法によっ
て数百nm〜数十μmの光応答薄膜を作製した。得られ
た光応答薄膜は、図3の吸収スペクトル及び蛍光スペク
トルから、370〜400nmに強い吸収を示し、50
0〜530nmに非常に強い蛍光が観測された。波長4
00nmの紫色の光照射では、光誘起電子移動反応に起
因した大きな吸収変化が550〜650nmの可視域及
び800〜1200nmの近赤外域に観察された(図
4)。対アニオンとしてTFPB-を使用すると、逆電子移
動反応によって吸収スペクトルが当初の状態に可逆的に
戻り、繰返し吸収を変化させることができ、蛍光強度も
可逆的に変化できた。対アニオンとしてブロミドを使用
すると逆電子移動反応が非常に速く進行し、約1ナノ秒
で元に戻った。また、無置換のテトラフェニールボレー
ト(TPB-)を使用すると、TPB-の酸化分解のため逆電子
移動反応がなくなり、光記録状態を半永久的に保存でき
た。[0013] The polymer photo-responsive material has a concentration of 50 to 100 m.
g / ml was dissolved in THF, 1,2-dimethoxyethane or cyclohexanone, and a photoresponsive thin film of several hundred nm to several tens μm was prepared by spin coating or solvent evaporation. The obtained light-responsive thin film shows strong absorption at 370 to 400 nm from the absorption spectrum and the fluorescence spectrum of FIG.
Very strong fluorescence was observed at 0 to 530 nm. Wavelength 4
With the violet light irradiation of 00 nm, a large absorption change due to the photoinduced electron transfer reaction was observed in the visible region of 550 to 650 nm and the near infrared region of 800 to 1200 nm (FIG. 4). When TFPB - was used as the counter anion, the absorption spectrum was reversibly returned to the initial state by the reverse electron transfer reaction, the absorption was repeatedly changed, and the fluorescence intensity was also reversibly changed. When bromide was used as the counter anion, the reverse electron transfer reaction proceeded very quickly and returned in about 1 nanosecond. Further, unsubstituted tetra phenylalanine borate - Using, TPB (TPB) - there is no oxidation reverse electron transfer reaction for degradation, could be stored optical recording state semipermanently.
【0014】膜厚50nmのAg薄膜を金属薄膜22とし
てガラス基板21上に堆積し、更に4,4'-ビビピリジニ
ウム高分子のTFPB-塩からなる膜厚1000nmの光応
答薄膜23を金属薄膜22の上に堆積し、ガラス基板2
1の反対側にプリズム24を配置した。作製された光変
調素子20をパルスレーザでマスクを介して励起する
と、数十ナノ秒〜数マイクロ秒で画像変調でき、画像情
報の超高速光相関への応用が期待される。An Ag thin film having a thickness of 50 nm is deposited as a metal thin film 22 on a glass substrate 21, and a photoresponsive thin film 23 made of a 4,4'-bibipyridinium polymer TFPB - salt having a thickness of 1000 nm is further deposited on the metal thin film 22. Deposited on the glass substrate 2
The prism 24 was arranged on the opposite side of the prism 1. When the manufactured light modulation element 20 is excited by a pulse laser through a mask, an image can be modulated in a few tens of nanoseconds to a few microseconds, and application of the image information to ultrahigh-speed optical correlation is expected.
【0015】[0015]
【発明の効果】以上に説明したように、本発明の光応答
材料は、イオン対電荷移動錯体の光誘起電子移動反応に
起因して可視又は近赤外域に大きな吸収変化又は蛍光変
化を示す。この性質を利用するとき、たとえば波長40
0nm程度の紫色半導体レーザ光の照射によって吸収変
化又は蛍光変化を生じるため、高密度光記録や高速光変
調が可能となる。As described above, the photoresponsive material of the present invention exhibits a large absorption or fluorescence change in the visible or near infrared region due to the photoinduced electron transfer reaction of the ion-pair charge transfer complex. When utilizing this property, for example, the wavelength 40
Irradiation of a violet semiconductor laser beam of about 0 nm causes an absorption change or a fluorescence change, so that high-density optical recording and high-speed optical modulation can be performed.
【図1】 本発明の光応答材料を使用した光記録素子FIG. 1 shows an optical recording element using the photoresponsive material of the present invention.
【図2】 本発明の光応答材料を使用した光変調素子FIG. 2 is a light modulation device using the photoresponsive material of the present invention.
【図3】 実施例で成膜した光応答薄膜の吸収スペクト
ル及び蛍光スペクトルFIG. 3 shows an absorption spectrum and a fluorescence spectrum of a photoresponsive thin film formed in an example.
【図4】 実施例で成膜した光応答薄膜を紫色光で照射
したときの吸収スペクトルFIG. 4 shows an absorption spectrum when the photoresponsive thin film formed in the example is irradiated with violet light.
10:光記録素子 11:基板 12:光応答薄膜
13:酸素遮断高分子膜 20:光変調素子 21:ガラス基板 22:金属
薄膜 23:光応答薄膜 24:プリズムReference Signs List 10: Optical recording element 11: Substrate 12: Photoresponsive thin film 13: Oxygen blocking polymer film 20: Optical modulation element 21: Glass substrate 22: Metal thin film 23: Photoresponsive thin film 24: Prism
Claims (5)
ムカチオンと対アニオンY-との間にイオン対電荷移動
錯体を形成することを特徴とする光応答材料。 X:ビピリジニウム基の窒素原子に対して4位又は2位
で結合したチオフェニル基,フリル基,ビチオフェニル
基,ターチオフェニル基,フルオレニル基,ピレニル
基,ペリレニル基又はビニル基 R1,R2:それぞれ独立にアルキル基,ポリ(テトラメ
チレンオキシ)基,ヒドロキシアルキル基,アルケニル
基,アルキニル基,アラルキル基,アリール基又は複素
環基 Y-:クロリド,ブロミド,ヨージド,アニオン性置換
基をもつ芳香族分子,トリフルオロメチル基又は他の電
子吸引性置換基を1個以上有するテトラフェニルホウ酸1. A photoresponsive material represented by the following general formula and forming an ion-pair charge transfer complex between a substituted bipyridinium cation and a counter anion Y − . X: thiophenyl group, furyl group, bithiophenyl group, terthiophenyl group, fluorenyl group, pyrenyl group, perylenyl group or vinyl group bonded at the 4- or 2-position to the nitrogen atom of the bipyridinium group: R 1 and R 2 respectively independently an alkyl group, a poly (tetramethylene) group, a hydroxyalkyl group, an alkenyl group, an alkynyl group, an aralkyl group, an aryl group or a heterocyclic group Y -: chloride, bromide, iodide, aromatic molecules with anionic substituent Having one or more trifluoromethyl groups or other electron-withdrawing substituents
ピリジニウム)チオフェン・ジテトラキス[3,5-ビス(トリ
フルオロメチル)フェニル]ボレート塩を分散状態で含む
高分子又は主鎖の一部に有する高分子である請求項1記
載の光応答材料。2. A polymer or main chain in which the ion-pair charge transfer complex contains 2,5-bis (4-bipyridinium) thiophene / ditetrakis [3,5-bis (trifluoromethyl) phenyl] borate salt in a dispersed state. 2. The photoresponsive material according to claim 1, which is a polymer partially contained.
錯体を主鎖の一部又は側鎖に有する高分子、或いはイオ
ン対電荷移動錯体の分散・固定化媒体として作用する高
分子を用いて成膜された光応答薄膜。3. A polymer having the ion-pair charge transfer complex according to claim 1 or 2 in a part or a side chain of a main chain, or a polymer acting as a dispersion / immobilization medium of the ion-pair charge transfer complex. Photo-responsive thin film
る蛍光性薄膜を基板上に堆積し、該蛍光性薄膜の上に酸
素遮断高分子膜が更に堆積されている光記録素子。4. An optical recording element comprising: a fluorescent thin film made of the photoresponsive material according to claim 1 deposited on a substrate; and an oxygen-blocking polymer film further deposited on the fluorescent thin film.
過した被変調光をガラス基板に対向する面で全反射させ
るプリズムと、該プリズムの反対側で前記ガラス基板に
堆積された金属薄膜及び請求項1又は2記載の光応答材
料からなる光応答薄膜と、被変調光が前記光応答薄膜中
で導波モード条件を形成し、反射率の入射角依存性に急
峻な配置で前記光応答薄膜に書込み光を照射する駆動光
源とを備えていることを特徴とする光変調素子。5. A prism disposed on one surface of a glass substrate and totally reflecting the modulated light transmitted therethrough on a surface facing the glass substrate; and a metal thin film deposited on the glass substrate on the opposite side of the prism. 3. A photoresponsive thin film made of the photoresponsive material according to claim 1 or 2, and the modulated light forms a waveguide mode condition in the photoresponsive thin film, and the photoresponsive thin film is arranged in such a manner that the incident angle dependence of the reflectance is steep. A light source that irradiates the thin film with writing light.
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2004099340A1 (en) * | 2003-05-12 | 2004-11-18 | Sumitomo Chemical Company, Limited | Luminescent-polymer composition |
JP2005179634A (en) * | 2003-05-12 | 2005-07-07 | Sumitomo Chemical Co Ltd | Polymeric luminescent composition |
WO2008032818A1 (en) * | 2006-09-15 | 2008-03-20 | Kyushu University, National University Corporation | Ion-pair charge-transfer complex polymer and photoresponsive/electroresponsive material comprising the same |
US7453620B2 (en) | 2003-09-03 | 2008-11-18 | Asahi Glass Company, Limited | Spatial optical modulation element and spatial optical modulation method |
US7732806B2 (en) | 2005-05-30 | 2010-06-08 | Kabushiki Kaisha Toshiba | Refractive index variable element |
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2001
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2004099340A1 (en) * | 2003-05-12 | 2004-11-18 | Sumitomo Chemical Company, Limited | Luminescent-polymer composition |
JP2005179634A (en) * | 2003-05-12 | 2005-07-07 | Sumitomo Chemical Co Ltd | Polymeric luminescent composition |
JP4734850B2 (en) * | 2003-05-12 | 2011-07-27 | 住友化学株式会社 | Polymer light emitter composition |
US7453620B2 (en) | 2003-09-03 | 2008-11-18 | Asahi Glass Company, Limited | Spatial optical modulation element and spatial optical modulation method |
US7732806B2 (en) | 2005-05-30 | 2010-06-08 | Kabushiki Kaisha Toshiba | Refractive index variable element |
WO2008032818A1 (en) * | 2006-09-15 | 2008-03-20 | Kyushu University, National University Corporation | Ion-pair charge-transfer complex polymer and photoresponsive/electroresponsive material comprising the same |
US7994228B2 (en) * | 2006-09-15 | 2011-08-09 | Kyushu University, National University Corporation | Ion-pair charge-transfer complex polymer and photoresponsive-electroresponsive material comprising the same |
CN101553520B (en) * | 2006-09-15 | 2012-05-30 | 国立大学法人九州大学 | Ion pair charge transfer coordination polymer and photoresponsive/photoresponsive material containing same |
CN113620939A (en) * | 2021-08-16 | 2021-11-09 | 南方科技大学 | Compound and preparation method thereof, electrochromic material, electrochromic device and preparation method thereof |
CN114516864A (en) * | 2022-03-02 | 2022-05-20 | 南方科技大学 | Compound and preparation method thereof, electrochromic device and preparation method and application thereof |
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