JP2002317269A - Manufacturing method of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress deposition of foreign matters adhered to a substrate in a film deposition step. SOLUTION: The semiconductor device manufacturing method comprises a step (A) of heating the substrate disposed in a reaction chamber and feeding reaction gas in the reaction chamber to deposit a film on the substrate, and a step (B) of repeatedly raising/dropping the temperature in the reaction chamber while there is no substrate in the reaction chamber, and the step (B) is performed before or after the step (A).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a technology for manufacturing a semiconductor device, and more particularly to a technology effective when applied to a film forming technology for forming a film on a substrate.

[0002]

2. Description of the Related Art Memory IC (Integrated Circuit),
As a film used for manufacturing a semiconductor device such as a logic IC or a hybrid IC having a memory function and a logic function, there is, for example, a high melting point silicide-based tungsten silicide (WSi ₂ ) film. Since the WSi ₂ film has excellent heat resistance and a lower specific resistance than the polycrystalline silicon film, the WSi ₂ film is a MISFET (Metal Insulator Semiconductor).
Field Effect Transistor) gate electrode and wiring,
It is used to form a conductive plug or the like that electrically connects upper and lower wirings.

For forming a WSi ₂ film, for example, a cold wall type chemical vapor deposition (CVD) is used.
Deposition apparatus is used. In a cold-wall type CVD apparatus, a susceptor and a gas diffusion plate are arranged in a reaction chamber so as to face each other. The susceptor supports a substrate called a semiconductor wafer, and the gas diffusion plate diffuses a gas supplied into the reaction chamber. The semiconductor wafer is arranged on the main surface (substrate arrangement surface) of the susceptor, and is heated to a predetermined film forming temperature by heating the susceptor with, for example, radiation heat from a lamp heater. Such cold wall type CVD
The formation of the WSi ₂ film using the apparatus is performed by the following method.

First, the main surface of the susceptor is coated with a WSi ₂ film in order to suppress the slip of the semiconductor wafer on the susceptor and condition the reaction chamber. To form the WSi ₂ film, the susceptor is heated to a film forming temperature by radiant heat from a lamp heater, and, for example, tungsten hexafluoride (WF ₆ ) and dichlorosilane (SiH ₂
Cl ₂ ). The step of coating the susceptor with the WSi ₂ film is performed every preset number of processed semiconductor wafers (for example, every 25 wafers).
Next, the semiconductor wafer is loaded into the reaction chamber and placed on the main surface of the susceptor. At this time, the temperature of the susceptor is lowered to a temperature lower than the film forming temperature so that the semiconductor wafer is not damaged by rapid heating. Next, the susceptor is heated by the radiant heat from the lamp heater to raise the temperature of the semiconductor wafer to the film forming temperature, and a reaction gas is supplied into the reaction chamber so that the semiconductor wafer is placed on the main surface (circuit forming surface). WSi ₂
Form a film. Next, the temperature of the susceptor is lowered to a predetermined temperature, and the semiconductor wafer is unloaded from the reaction chamber. Thereafter, another semiconductor wafer is loaded into the reaction chamber and placed on the main surface of the susceptor. A WSi ₂ film is formed on the main surface of another semiconductor wafer in the same manner as described above. The step of forming the WSi ₂ film on the main surface of the semiconductor wafer is repeatedly performed in accordance with a preset number of processed semiconductor wafers.

[0005]

By the way, in a CVD apparatus, when a film is formed on a main surface of a susceptor or a film is formed on a main surface of a semiconductor wafer, an inner wall of a reaction chamber, a gas diffusion plate or the like is required. Unnecessary film (homogeneous film or by-product film, condensate, etc.) is formed. On the other hand, when a film is formed on the main surface of the semiconductor wafer, the temperature of the susceptor is raised from a temperature at which the semiconductor wafer is not damaged by rapid heating to a film forming temperature. At this time, since the temperature in the reaction chamber is also increased from a low temperature to a high temperature, the unnecessary film is separated due to thermal expansion of the reaction chamber and the gas diffusion plate and the thermal stress of the unnecessary film formed therein. .

That is, in a film forming step of forming a film on the main surface of the susceptor or a film forming step of forming a film on the main surface of the immediately preceding semiconductor wafer, the film formed on the inner wall of the reaction chamber, the gas diffusion plate, or the like. The unnecessary film is peeled off in a film forming step on the semiconductor wafer performed after these film forming steps, and foreign matter due to the peeling of the unnecessary film adheres to the main surface of the semiconductor wafer. If such foreign matter adheres to the main surface of the semiconductor wafer during film formation, defects occur in the film formed on the main surface of the semiconductor wafer, which causes a reduction in the semiconductor device manufacturing yield. It is necessary to minimize the amount of foreign matter that sometimes adheres to the main surface of the semiconductor wafer. In particular, a silicide-based film including a WSi ₂ film is harder than an insulating film such as a silicon oxide film or a silicon nitride film, so that it is easily peeled off. The problem that the peeling of the unnecessary film adheres to the main surface of the semiconductor wafer also occurs in the formation of another film.

[0007] In the cold wall type CVD apparatus, unnecessary films are less formed on the inner wall of the reaction chamber, the gas diffusion plate and the like than in the hot wall type CVD apparatus. Also, peeling of the unnecessary film occurs.

In order to remove unnecessary films, a cleaning gas is supplied into the reaction chamber every predetermined number of processed semiconductor wafers (eg, every 25 wafers) when film formation is not performed. It is difficult to completely remove.

An object of the present invention is to provide a technique capable of suppressing foreign substances adhering to a substrate during film formation.

Another object of the present invention is to provide a technique capable of improving the production yield of a semiconductor device.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0012]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, in the manufacture of a semiconductor device, prior to a film forming step of forming a film on a substrate disposed in a reaction chamber, the substrate in the reaction chamber without the substrate is placed in the reaction chamber. There is a temperature cycle step of repeatedly raising and lowering the temperature.

According to the above-described means, one of the film forming steps can be performed.
The unnecessary film formed on the inner wall of the reaction chamber, the gas diffusion plate, or the like in the previous film forming step can be removed in the temperature cycle step. Can be suppressed.

In addition, since foreign substances adhering to the substrate can be suppressed, defects in a film formed on the substrate can be suppressed, and the production yield of semiconductor devices can be improved.

[0016]

Embodiments of the present invention will be described below in detail with reference to the drawings. In all the drawings for describing the embodiments of the present invention, components having the same functions are denoted by the same reference numerals, and their repeated description will be omitted.

In the present embodiment, an example in which the present invention is applied to a process of forming a WSi ₂ film in a semiconductor device manufacturing process will be described.

FIG. 1 is a plan view of a semiconductor wafer used for manufacturing a semiconductor device according to an embodiment of the present invention, and FIGS. 2 to 4 are cross-sectional views of main parts during a manufacturing process of the semiconductor device. FIG. 5 is a diagram showing a schematic configuration of a CVD apparatus used for manufacturing the semiconductor device, and FIG.
It is a figure showing a temperature sequence in a VD device.

First, the manufacturing process of the semiconductor device will be described. A semiconductor wafer 1 made of, for example, p-type single crystal silicon is prepared as a substrate, and thereafter, an element formation region is partitioned into a plurality of chip formation regions 1A preset on a main surface (circuit formation surface) of the semiconductor wafer 1. 2A to be formed, and thereafter, an insulating film 2B made of, for example, a silicon oxide film is selectively embedded in the inside of the groove 2A (FIGS. 1 and 2).
(See (a)). The plurality of chip forming regions 1A are arranged in a matrix and are separated from each other via a dicing region 1B. As the insulating film 2B, a silicon oxide film is formed on the entire main surface of the semiconductor wafer 1 including the inside of the groove 2A, and thereafter,
The silicon oxide film on the semiconductor wafer 1 except for the inside of the groove 2A is subjected to, for example, chemical mechanical polishing (CMP).
Cal polishing) can be selectively embedded. The silicon oxide film serving as the insulating film 2B is formed by, for example, a CVD apparatus.

Next, as shown in FIG. 2B, a gate insulating film 3 made of, for example, a silicon oxide film is formed in the element forming region of each chip forming region 1A. The silicon oxide film of the gate insulating film 3 is formed by, for example, a thermal oxidation method. The gate insulating film 3 is not limited to a silicon oxide film, and may be formed of another film such as a silicon oxynitride film obtained by nitriding a silicon oxide film, or a tantalum oxide film (for example, Ta ₂ O ₅ ). I'm not sure.

Next, as shown in FIG. 2C, a polycrystalline silicon film 4 and a WSi ₂ film 5 are sequentially formed on the entire main surface of the semiconductor wafer 1 including the gate insulating film 3. The polycrystalline silicon film 4 and the WSi ₂ film 5 are formed by, for example, a CVD apparatus. Impurities for reducing the resistance value are introduced into the polycrystalline silicon film 4 during or after the deposition.

Next, the WSi ₂ film 5, the polycrystalline silicon film 4
Are sequentially patterned to form a gate electrode G having a polycide structure on the gate insulating film 3 in each chip forming region 1A, as shown in FIG. 3A.

Next, using the gate electrode G as a mask for introducing impurities, an impurity (for example, arsenic (As)) is introduced into the element formation region of each chip formation region by ion implantation. As shown, a pair of n-type semiconductor regions 6 serving as a source region and a drain region are formed. By this step, a MISFET-Q having a polycide gate structure is formed.

Next, as shown in FIG. 3C, an interlayer insulating film 7 made of, for example, a silicon oxide film is formed on the entire surface of the main surface of the semiconductor wafer 1, and thereafter, a connection hole 8 is formed in the interlayer insulating film 7. Then, a conductive plug 9 made of, for example, a tungsten (W) film is selectively buried in the inside of the connection hole 8, and then a conductive plug 9 is formed on the interlayer insulating film 7 as shown in FIG. The wiring 10 electrically connected to the plug 9 is formed. The conductive plug 9 forms a W film on the entire surface of the interlayer insulating film 7 including the inside of the connection hole 8 and then removes the W film on the interlayer insulating film 7 except for the inside of the connection hole 8 by, for example, a CMP method. Can be selectively embedded. The silicon oxide film as the interlayer insulating film 7 and the W film as the conductive plug 9 are formed by, for example, a CVD apparatus.

Next, an interlayer insulating film 11 made of, for example, a silicon oxide film is formed on the entire surface of the main surface of the semiconductor wafer 1 including the wiring 10, and thereafter, as shown in FIG. A wiring 12 is formed on 11. Interlayer insulating film 11
Is formed by, for example, a CVD apparatus.

Next, by repeatedly forming an interlayer insulating film and wiring, and thereafter forming a final protective film and a bonding opening in the final protective film, an integrated circuit is formed in each chip forming region of the semiconductor wafer 1. . Thereafter, the semiconductor device is almost completed by dividing the semiconductor wafer 1 into each chip forming region 1A.

Next, a CVD apparatus used for forming the WSi ₂ film 5 will be described. As shown in FIG.
The CVD device 20 is configured as a cold wall type. This CVD apparatus 20 uses a chemical vapor deposition to generate WS
This is an apparatus for forming an i ₂ film.

The reaction chamber 21 of the CVD apparatus 20 mainly includes, for example, a chamber 22 and a lid member 23 fixed and supported in the chamber 22. The chamber 22 and the lid member 23 are formed of, for example, an aluminum-based material. Gas supply pipes 28, 29, 30 are connected to the lid member 23, and a reaction gas, a cleaning gas, and an inert gas are supplied into the reaction chamber 21 from these gas supply pipes. As the reaction gas, for example, tungsten hexafluoride (WF ₆ ) and dichlorosilane (SiH ₂ Cl ₂ ) are used. As the cleaning gas, for example, chlorine trifluoride (ClF ₃ ) is used. As the inert gas, for example, argon (Ar) is used. A gas supply pipe 31 and a vacuum exhaust pipe 32 are connected to the chamber 22, and a backside gas (for example, Ar) is supplied from the gas supply pipe 31 into the reaction chamber 21.

In the reaction chamber 21, a susceptor 24 and a gas diffusion plate 25 are arranged. The gas diffusion plate 25 is arranged above the susceptor 24 so as to face the main surface (substrate arrangement surface) of the susceptor 24. Susceptor 24
The window of the chamber 22 is arranged below the susceptor 24 so as to face the susceptor 24.
6 is fixed to the chamber 22. A heating section having a lamp heater 27 is provided outside the quartz plate 26. The semiconductor wafer 1 is disposed on the main surface of the susceptor 24, and is heated to a predetermined film forming temperature by heating the susceptor 24 with radiant heat from the lamp heater 27.

Next, a cold wall type CVD apparatus 2
FIGS. 5 and 6 show the formation of the WSi ₂ film 5 using
This will be described with reference to FIG.

First, the semiconductor wafer 1 on the susceptor 24
Before the semiconductor wafer 1 is loaded into the reaction chamber 21, the main surface (wafer mounting surface) of the susceptor 24 is coated (pre-coated) with a WSi ₂ film in order to suppress slippage of the semiconductor wafer 1 and condition the inside of the reaction chamber 21. The formation of this WSi ₂ film
The temperature of the susceptor 24 is raised from room temperature to a temperature of, for example, about 585 ° C. by the radiant heat from the lamp heater (step <33> in FIG. 6). Tungsten hexafluoride (WF
₆ ) and dichlorosilane (SiH ₂ Cl ₂ ) (step <34> in FIG. 6). The WSi ₂ film in this step is formed to have a larger thickness than the WSi ₂ film formed on the semiconductor wafer in the subsequent film forming step in order to suppress the slip of the semiconductor wafer 1 on the susceptor 24. . In the present embodiment, W on the susceptor 24
The Si ₂ film is formed with a thickness of, for example, about 1200 nm.
In this step, an unnecessary film made of WSi _{2, a by-} product, or a condensate is formed on the inner wall of the reaction chamber 21 (the inner wall of the chamber and the cover member), the gas diffusion plate 25, and the like. The pre-coating step of coating the susceptor 24 with the WSi ₂ film is performed every preset number of processed semiconductor wafers (for example, every 25 wafers).
It is performed.

Next, in a state where the semiconductor wafer 1 is not in the reaction chamber 21, the temperature in the reaction chamber 21 is repeatedly raised and lowered (step <35> in FIG. 6). In the present embodiment, since the susceptor 24 is performed after the pre-coating step of coating the susceptor 24 with the WSi ₂ film, the temperature of the susceptor 24 is once decreased from the temperature at the time of pre-coating to a first temperature 35A lower than the temperature at the time of pre-coating. The temperature of the susceptor 24 is increased from the first temperature 35A to a second temperature 35B higher than the first temperature 35A, and then the temperature of the susceptor 24 is decreased from the second temperature 35B to the first temperature 35A. This is defined as one cycle, and this cycle is repeated a plurality of times. In the present embodiment, the first temperature 35A is, for example, about 200 ° C., and the second temperature 35B is, for example, about 575 ° C. The holding time of the first and second temperatures is, for example, about 200 seconds. Since the temperature inside the reaction chamber 21 changes depending on the temperature of the susceptor 24, the temperature inside the reaction chamber 21 also rises and falls by raising and lowering the temperature of the susceptor 24. The temperature of the susceptor 24 is increased by radiant heat from the lamp heater 27, and the temperature of the susceptor 24 is decreased by lowering the output of the lamp heater 27 to heat conduction to the susceptor support 24a, heat radiation to the reaction chamber 21, or gas diffusion plate. The cooling is performed by an inert gas (for example, Ar) supplied from the gas supply line 25 or a backside gas (for example, Ar) supplied from the gas supply pipe 31. Alternatively, cooling is performed by adiabatic expansion during evacuation of the reaction chamber 21.

In this step, the unnecessary film adhering to the inner wall of the reaction chamber 21 and the gas diffusion plate 25 and the like thermally expands and contracts, and the wall (chamber and lid member) of the reaction chamber 21 and the gas diffusion plate 25 and the like heat. Because of the expansion and contraction, the unnecessary film is peeled off by these thermal expansion and contraction. That is, unnecessary films formed on the inner wall of the reaction chamber 21, the gas diffusion plate 25, and the like can be removed in the precoating step of covering the susceptor 24 with the WSi ₂ film.

Next, the semiconductor wafer 1 is loaded into the reaction chamber 21 and placed on the main surface of the susceptor 24 (step 3).
6). At this time, the temperature of the susceptor 24 is lowered so that the semiconductor wafer 1 is not damaged by rapid heating. In the present embodiment, the above-described temperature cycle step is completed by lowering the temperature of the susceptor 24 to the first temperature (200 ° C.). This temperature is a temperature at which the semiconductor wafer 1 is not damaged by rapid heating. Therefore, the semiconductor wafer 1 is arranged on the main surface of the susceptor 24 at the first temperature without raising the temperature of the susceptor 24.

Next, WSi _{2 is} deposited on the main surface of the semiconductor wafer 1.
The film 5 is formed (Step 37 in FIG. 6). This WSi ₂
The film is formed by heating the susceptor 24 to a temperature of, for example, about 585 ° C. by radiant heat from the lamp heater 27 and maintaining the temperature at a temperature of, for example, WF as a reaction gas in the reaction chamber.
₆ and SiH ₂ Cl ₂ . In this embodiment, the WSi ₂ film 5 on the semiconductor wafer 1 is used.
Is formed with a thickness of, for example, about 100 nm.

In this step, the temperature of the susceptor 24 is changed from the first temperature 35 A (200 ° C.) to the film forming temperature (585
C.), the temperature inside the reaction chamber 21 also rises. Conventionally, since unnecessary films formed on the inner wall of the reaction chamber 21, the gas diffusion plate 25, and the like are not removed in the precoating process, the unnecessary film formed on the inner wall of the reaction chamber 21, the gas diffusion plate 25, and the like is removed. In many cases, the number of separated substances (foreign substances) adhered to the main surface of the semiconductor wafer 1 is large.

On the other hand, in the present embodiment, before the film forming step of forming the WSi ₂ film on the main surface of the semiconductor wafer 1,
Since unnecessary films formed on the inner wall of the reaction chamber 21, the gas diffusion plate 25, and the like in the precoating step are removed in the above-described temperature cycling step, the number of delaminated substances adhered to the main surface of the semiconductor wafer 1 is reduced. That is, after the film forming step of forming the WSi ₂ film on the susceptor 24 and before the film forming step of forming the WSi ₂ film 5 on the main surface of the semiconductor wafer 1, the temperature inside the reaction chamber 21 is changed. Is carried out, a peeling object (foreign matter) adhering to the main surface of the semiconductor wafer 1 in the film forming step of forming the WSi ₂ film 5 on the main surface of the semiconductor wafer 1 is suppressed. be able to.

Next, the temperature of the susceptor 24 is lowered from the temperature at the time of film formation to, for example, a first temperature, and the semiconductor wafer 1 is carried out of the reaction chamber 21. And is arranged on the main surface of the susceptor 24 (Step 38 in FIG. 6). Thereafter, the temperature of the susceptor 24 is raised to the film forming temperature, and the WSi ₂ film 5 is formed on the main surface of another semiconductor wafer 1 by the same method as described above (Step 37 in FIG. 6). The film forming process for forming the WSi ₂ film 5 on the main surface of the semiconductor wafer 1 is repeatedly performed according to a preset number of processed semiconductor wafers 1.

FIG. 7 shows the change in the number of foreign substances adhering on the main surface of the semiconductor wafer for inspection in the foreign substance inspection according to the prior art, and the foreign substances adhering on the main surface of the semiconductor wafer for inspection in the foreign substance inspection according to the technique of the present invention. It is a figure which shows the transition of a number. The number of foreign substances shown in the figure is 0.3 μm among the foreign substances adhered on the main surface of the 8-inch diameter semiconductor wafer for inspection.
It is a numerical value when counting the above foreign substances. In the prior art foreign material inspection, a pre-coating process is performed, and then
It consists of a process to count foreign matter by applying temperature conditions during film formation,
The foreign substance inspection according to the technique of the present invention includes a step of performing a pre-coating step, subsequently performing a temperature cycle step, and then performing a temperature condition at the time of film formation to count the foreign substances.

As shown in FIG. 7, in the foreign particle inspection according to the prior art, there were inspection days when the number of foreign particles exceeded 40, but in the foreign particle inspection according to the technology of the present invention, the number of foreign particles was less than 40 on any inspection day. there were. That is, by applying the present invention, an effect is obtained in which a separated substance adhering to the main surface of the semiconductor wafer during film formation can be suppressed.

As described above, according to the present embodiment, the following effects can be obtained. After the film forming step of forming the WSi ₂ film on the susceptor 24 and before the film forming step of forming the WSi ₂ film 5 on the main surface of the semiconductor wafer 1, the reaction chamber 2 is formed.
By performing a temperature cycle step of repeatedly raising and lowering the temperature in the semiconductor wafer 1, WSi _{2 is formed} on the main surface of the semiconductor wafer 1.
In the film forming step of forming the film 5, exfoliated matters (foreign matter) attached to the main surface of the semiconductor wafer 1 can be suppressed.

Further, since it is possible to suppress the exfoliated matter adhering on the main surface of the semiconductor wafer 1, it is possible to suppress the defect of the WSi ₂ film 5 formed on the main surface of the semiconductor wafer 1, thereby reducing the production yield of the semiconductor device. Improvement can be achieved.

Further, since it is possible to suppress the separated material adhering to the main surface of the semiconductor wafer 1, it is possible to reduce the number of inspections of the foreign matter of the device and to improve the operation efficiency of the device, thereby improving the productivity of the semiconductor device. Improvement can be achieved. In addition, the usage amount of the inspection semiconductor wafer can be reduced.

In the above-described embodiment, the susceptor 24
After the film forming step of forming the WSi ₂ film thereon, and before the film forming step of forming the WSi ₂ film 5 on the semiconductor wafer 1, the reaction is performed without the semiconductor wafer 1 in the reaction chamber 21. Although the example in which the temperature cycle step of repeatedly raising and lowering the temperature in the chamber 21 is performed has been described, the step of forming the WSi ₂ film 5 on the semiconductor wafer 1 is performed continuously according to a predetermined number of processed semiconductor wafers 1. Therefore, the temperature cycle step may be performed between a film forming step performed on the semiconductor wafer and a subsequent film forming step performed on the semiconductor wafer. In this case, the process may be performed for each film forming process performed on the semiconductor wafer, but it is preferable to perform the process for a predetermined number of semiconductor wafers (for example, every three or five) in consideration of throughput. The temperature cycling step may be performed before the film forming step of forming the WSi ₂ film on the susceptor 24.

In the above-described embodiment, an example is described in which a temperature cycle in which the temperature of the susceptor 24 is lower than the film forming temperature is used as the temperature cycle for repeatedly raising and lowering the temperature in the reaction chamber 21. However, it is a matter of course that other temperature cycles may be used. Other temperature cycles include, for example, a temperature cycle in which the temperature of the susceptor 24 is higher than the film forming temperature, and a temperature cycle in which the temperature of the susceptor 24 is higher than the film forming temperature. Even in these temperature cycles, the unnecessary film formed on the inner wall of the reaction chamber 21, the gas diffusion plate, or the like can be removed. However, in a temperature cycle using a temperature higher than the film forming temperature, the semiconductor wafer
Therefore, it is desirable to use a temperature cycle lower than the film forming temperature described in the above embodiment.

As described above, the invention made by the present inventor is:
Although specifically described based on the embodiment, the present invention
It is needless to say that the present invention is not limited to the above-described embodiment, but can be variously modified without departing from the scope of the invention.

For example, the present invention is applicable not only to the formation of a WSi ₂ film but also to the formation of a film that can be formed by chemical vapor deposition (CVD). Examples of films that can be formed by CVD include a titanium silicide (TiSi ₂ ) film, a tungsten (W) film, a titanium (Ti) film, and a silicon oxide (Si) film.
O ₂ ) film, silicon nitride (Si ₃ N ₄ ) film, tungsten nitride (TiN) film, polycrystalline silicon (Si) film and the like.

The present invention also relates to a physical vapor deposition (PVD) such as sputtering.
It can be applied to the formation of a film that can be formed by the above method. Examples of films that can be formed by PVD include Cu and Al.

The present invention also relates to a cold wall type C
The present invention can be applied not only to the VD apparatus but also to the formation of a film by a hot-wall type single-wafer type film forming apparatus or a batch type film forming apparatus.

[0050]

The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows.

According to the present invention, foreign substances adhering to the substrate in the film forming process can be suppressed.

According to the present invention, the production yield of the semiconductor device can be improved.

[Brief description of the drawings]

FIG. 1 is a plan view of a semiconductor wafer used for manufacturing a semiconductor device according to an embodiment of the present invention.

FIGS. 2A to 2C are cross-sectional views of main parts during a manufacturing process of a semiconductor device according to an embodiment of the present invention;

FIGS. 3A to 3C are cross-sectional views of main parts during a manufacturing process of the semiconductor device according to the embodiment of the present invention;

FIGS. 4A and 4B are cross-sectional views of main parts during a manufacturing process of a semiconductor device according to an embodiment of the present invention.

FIG. 5 is a diagram showing a schematic configuration of a CVD apparatus used for manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 6 is a diagram showing a temperature sequence of a CVD apparatus used in manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 7 is a diagram showing a change in the number of foreign particles attached on a main surface of a semiconductor wafer for inspection.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor wafer, 1A ... Chip formation area, 1B ... Dicing area, 2A ... Groove, 2B ... Insulating film, 3 ... Gate insulating film, 4 ... Polycrystalline silicon film, 5 ... Tungsten silicide film, 6 ... N-type semiconductor region , 7,11 ... interlayer insulating film, 8
... Connection hole, 9 ... Conductive plug, 10,12 ... Wiring, Q ...
MISFET, G: gate electrode.

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K030 CA04 CA12 DA06 JA10 KA22 4M104 AA01 BB01 BB02 BB04 BB14 BB18 BB25 BB28 BB30 BB33 BB40 CC05 DD16 DD37 DD43 DD64 DD65 DD75 EE05 EE14 EE17 FF14 GG09 AGG03F14 GG09 AGG03A BB15 DP03 DQ10 EF05 EK13 HA06 HA16 HA22

Claims (5)

[Claims] 1. A method comprising: heating a substrate disposed in a reaction chamber;
(A) supplying a reaction gas into the reaction chamber to form a film on the substrate, and repeatedly raising and lowering the temperature in the reaction chamber without the substrate in the reaction chamber. (B) A method for manufacturing a semiconductor device, comprising: 2. The method of manufacturing a semiconductor device according to claim 1, wherein the step (B) is performed before or after the step (A). 3. The method of manufacturing a semiconductor device according to claim 1, wherein the step (B) is performed in a temperature range in which a film forming temperature when forming a film on the substrate is located halfway. Semiconductor device manufacturing method. 4. The method of manufacturing a semiconductor device according to claim 1, wherein the step (B) is performed at a film forming temperature or lower when forming a film on the substrate. Semiconductor device manufacturing method. 5. A susceptor disposed in the reaction chamber is heated without a substrate in the reaction chamber, and a reaction gas is supplied into the reaction chamber to form a film on the susceptor. C) a step of repeatedly raising and lowering the temperature in the reaction chamber with no substrate in the reaction chamber; and heating the substrate disposed in the reaction chamber, Forming a film on the substrate by supplying a reaction gas into the substrate (A)
A method of manufacturing a semiconductor device, wherein the step (B) is performed before or after the step (C) and before the step (A).