JP2002310529A - Peltier element device - Google Patents
Peltier element deviceInfo
- Publication number
- JP2002310529A JP2002310529A JP2001111845A JP2001111845A JP2002310529A JP 2002310529 A JP2002310529 A JP 2002310529A JP 2001111845 A JP2001111845 A JP 2001111845A JP 2001111845 A JP2001111845 A JP 2001111845A JP 2002310529 A JP2002310529 A JP 2002310529A
- Authority
- JP
- Japan
- Prior art keywords
- peltier device
- peltier
- effect
- peltier element
- cooling surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001816 cooling Methods 0.000 claims abstract description 23
- 238000010438 heat treatment Methods 0.000 claims abstract description 21
- 230000003373 anti-fouling effect Effects 0.000 claims description 21
- 230000000844 anti-bacterial effect Effects 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 239000011941 photocatalyst Substances 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 239000002826 coolant Substances 0.000 claims 1
- 230000005679 Peltier effect Effects 0.000 abstract description 8
- 230000005678 Seebeck effect Effects 0.000 abstract description 8
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 5
- 230000020169 heat generation Effects 0.000 abstract description 4
- 241000894006 Bacteria Species 0.000 abstract description 3
- 230000000843 anti-fungal effect Effects 0.000 abstract 1
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 6
- 239000002519 antifouling agent Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical group FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000118 hair dye Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910001961 silver nitrate Inorganic materials 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 239000005871 repellent Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- XPBBUZJBQWWFFJ-UHFFFAOYSA-N fluorosilane Chemical compound [SiH3]F XPBBUZJBQWWFFJ-UHFFFAOYSA-N 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 150000004819 silanols Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Apparatus For Disinfection Or Sterilisation (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はペルチェ素子装置に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Peltier device.
【０００２】[0002]
【従来の技術】従来、ペルチェ素子装置では、発電源又
は冷媒若しくは熱媒としてのペルチェ素子が外部電源又
は電気機器等と接続可能に構成されている。そして、そ
のペルチェ素子は、通常、シリコン・ゲルマニウム系等
の半導体の表面に電極を介してアルミナ等のセラミック
ス板が形成されてなり、そのセラミックス板によって冷
却面及び発熱面が構成されている。2. Description of the Related Art Conventionally, in a Peltier device, a Peltier device as a power source or a refrigerant or a heat medium is configured to be connectable to an external power source or an electric device. Usually, the Peltier element is formed by forming a ceramic plate such as alumina on the surface of a semiconductor such as silicon-germanium through an electrode via an electrode, and the ceramic plate forms a cooling surface and a heating surface.
【０００３】このような構成からなるペルチェ素子装置
では、外部電源から電力が供給されることにより、ペル
チェ効果によって、冷却面で吸熱が生じることとなり、
発熱面で発熱が生じることとなる。また、ペルチェ素子
装置では、ペルチェ素子の冷却面を冷却するとともにペ
ルチェ素子の発熱面を加熱することにより、ゼーベック
効果によって、ペルチェ素子から電力が生じることとな
り、電気機器等にその電力を供給することができる。[0003] In the Peltier element device having such a configuration, when power is supplied from an external power source, heat is absorbed on the cooling surface by the Peltier effect.
Heat is generated on the heat generating surface. Also, in the Peltier device, by cooling the cooling surface of the Peltier device and heating the heating surface of the Peltier device, power is generated from the Peltier device due to the Seebeck effect, and the power is supplied to electric devices and the like. Can be.
【０００４】[0004]
【発明が解決しようとする課題】しかし、上記従来のペ
ルチェ素子装置では、ペルチェ素子の発熱面及び冷却面
に汚れ等が付着することにより、上記のペルチェ効果及
びゼーベック効果が発揮し難くなる。このようなペルチ
ェ素子装置では、ペルチェ素子から生じる電力が十分に
得られず、またペルチェ素子が生じる吸熱や発熱が十分
に得られないこととなる。However, in the above-mentioned conventional Peltier device, the above-mentioned Peltier effect and Seebeck effect are hardly exerted due to dirt or the like adhering to the heating surface and the cooling surface of the Peltier device. In such a Peltier device, sufficient power generated by the Peltier device cannot be obtained, and heat absorption and heat generated by the Peltier device cannot be sufficiently obtained.
【０００５】本発明は、上記従来の実情に鑑みてなされ
たものであって、ペルチェ効果及びゼーベック効果を十
分に発揮することができ、ペルチェ素子から生じる電力
又は吸熱若しくは発熱を十分に得ることが可能なペルチ
ェ素子装置を提供することを解決すべき課題としてい
る。The present invention has been made in view of the above-mentioned conventional circumstances, and is capable of sufficiently exhibiting the Peltier effect and the Seebeck effect, and sufficiently obtaining electric power or heat absorption or heat generated from the Peltier element. The problem to be solved is to provide a possible Peltier device.
【０００６】[0006]
【課題を解決するための手段】本発明のペルチェ素子装
置は、発熱面及び冷却面をもつペルチェ素子を発電源又
は冷媒若しくは熱媒とするペルチェ素子装置において、
前記発熱面及び前記冷却面の少なくとも一方には、汚れ
の付着を防止する防汚層が形成されていることを特徴と
する。According to the present invention, there is provided a Peltier device using a Peltier device having a heating surface and a cooling surface as a power source or a refrigerant or a heating medium.
At least one of the heating surface and the cooling surface is formed with an antifouling layer for preventing adhesion of dirt.
【０００７】本発明のペルチェ素子装置では、ペルチェ
素子の発熱面及び冷却面に形成された防汚層によって、
その発熱面及び冷却面に汚れが付着し難くなる。したが
って、本発明のペルチェ素子装置では、ペルチェ素子が
ペルチェ効果又はゼーベック効果を発揮し易くなるた
め、ペルチェ素子から十分な電力が得られることとな
り、またペルチェ素子から十分な吸熱や発熱が得られる
こととなる。In the Peltier device according to the present invention, the antifouling layer formed on the heating surface and the cooling surface of the Peltier device provides
Dirt hardly adheres to the heat generating surface and the cooling surface. Therefore, in the Peltier device of the present invention, the Peltier device easily exerts the Peltier effect or the Seebeck effect. Becomes
【０００８】本発明のペルチェ素子装置では、発熱面及
び冷却面の少なくとも一方は接触面積を拡大するフィン
をもつことが好ましい。こうであれば、フィンによって
発熱面及び冷却面の少なくとも一方の接触面積が拡大さ
れるため、ペルチェ効果やゼーベック効果が大きくな
り、吸熱及び発熱の程度が大きくなったり、大きな電力
が得られることとなる。かかるフィンに防汚層を設けれ
ば、そのような作用も確実になる。In the Peltier device according to the present invention, it is preferable that at least one of the heating surface and the cooling surface has a fin for increasing a contact area. In this case, since the contact area of at least one of the heating surface and the cooling surface is enlarged by the fin, the Peltier effect and the Seebeck effect are increased, and the degree of heat absorption and heat generation is increased, and a large amount of power is obtained. Become. If such a fin is provided with an antifouling layer, such an action is also ensured.
【０００９】本発明のペルチェ素子装置では、防汚層は
フッ素を含有していることが好ましい。特に、ケイ素含
有官能基と結合した末端のフッ化炭素基を有する防汚層
を採用することが好ましい。こうして防汚層がフッ化炭
素基を有すれば、フッ化炭素基の小さな臨界表面張力に
より、防汚効果が高い撥水効果としても現れ、耐水アカ
汚れ、耐毛染め液汚れ及び耐アルカリ性に対して効果が
高いからである。In the Peltier device of the present invention, the antifouling layer preferably contains fluorine. In particular, it is preferable to employ an antifouling layer having a terminal fluorocarbon group bonded to a silicon-containing functional group. If the antifouling layer has a fluorocarbon group in this way, due to the small critical surface tension of the fluorocarbon group, the antifouling effect also appears as a high water-repellent effect, and it becomes resistant to water stains, hair dye stains and alkali resistance. This is because the effect is high.
【００１０】フッ化炭素基は−ＣnＦ2n+1（ｎは１≦ｎ
≦１２自然数）であることができる。これによりフッ素
数が多く、フルオロシランが嵩高くなるため、耐水アカ
汚れ、耐毛染め液汚れ、耐摩耗性及び耐アルカリ性に対
して効果が大きい。The fluorocarbon group is -C n F 2n + 1 (where n is 1 ≦ n)
≦ 12 natural number). As a result, the fluorine number is large and the fluorosilane is bulky, so that it has a great effect on water stain resistance, hair dye stain, abrasion resistance and alkali resistance.
【００１１】本発明のペルチェ素子装置では、防汚層は
抗菌金属及び／又は光触媒を含有していることが好まし
い。つまり、防汚層には、Ａｇ、Ｃｕ、Ｚｎ等の化合物
のような抗菌金属を含有させてもよく、酸化チタン等の
光触媒を含有させてもよい。こうであれば、仮に、ペル
チェ素子の発熱面及び冷却面に汚れが付着した場合であ
っても、雑菌の繁殖や汚臭等の発生を抑制することがで
きるとともに、その汚れを容易に除去することができ
る。In the Peltier device of the present invention, the antifouling layer preferably contains an antibacterial metal and / or a photocatalyst. That is, the antifouling layer may contain an antibacterial metal such as a compound such as Ag, Cu, or Zn, or may contain a photocatalyst such as titanium oxide. In this case, even if dirt adheres to the heating surface and the cooling surface of the Peltier element, it is possible to suppress the propagation of various bacteria and the generation of odor, and to easily remove the dirt. be able to.
【００１２】[0012]
【発明の実施の形態】以下、本発明を具体化した実施形
態を図面を参照しつつ説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１３】図１に示すように、実施形態のペルチェ素
子装置では、図示しない外部電源や電気機器等に接続可
能なペルチェ素子２０を有している。そのペルチェ素子
２０は、半導体の表面に電極を介してアルミナからなる
セラミックス板が形成されてなり、そのセラミックス板
によって冷却面２１及び発熱面２２が構成されている。As shown in FIG. 1, the Peltier device according to the embodiment has a Peltier device 20 which can be connected to an external power supply, an electric device or the like (not shown). The Peltier device 20 is formed by forming a ceramic plate made of alumina on the surface of a semiconductor via an electrode, and a cooling surface 21 and a heating surface 22 are formed by the ceramic plate.
【００１４】発熱面２１及び冷却面２２には複数枚のフ
ィン１０が一体的に固定されている。各フィン１０もセ
ラミックス製であり、図２に示すように、アルミナから
なる素地１上に釉薬からなるガラス層２を有するもので
ある。各フィン１０に以下のような表面処理が施されて
いる。A plurality of fins 10 are integrally fixed to the heating surface 21 and the cooling surface 22. Each fin 10 is also made of ceramics, and has a glass layer 2 made of glaze on a substrate 1 made of alumina, as shown in FIG. Each fin 10 is subjected to the following surface treatment.
【００１５】先ず、次のようにして防汚処理剤を用意す
る。すなわち、パーフロロアルキル基含有有機ケイ素化
合物としての Ｃ8Ｆ17ＣＨ2ＣＨ2Ｓｉ（ＯＣＨ3）3 と、加水分解性基含有メチルポリシロキサン化合物とし
ての Ｓｉ（ＣＨ3Ｏ）3ＣＨ2ＣＨ2−（Ｓｉ（ＣＨ3）2Ｏ）10
−Ｓｉ（ＣＨ3）2ＣＨ 2ＣＨ2Ｓｉ（ＯＣＨ3）3 とからなり、これらを０．１Ｎ塩酸水、ｔ−ブタノール
及びヘキサンからなる親水性溶媒中で共加水分解した第
１剤を用意する。これらはそれぞれシラノール（Ｓｉ−
ＯＨ）基を有するものである考えられる。First, an antifouling agent is prepared as follows.
You. That is, perfluoroalkyl group-containing organosiliconization
C as compound8F17CHTwoCHTwoSi (OCHThree)Three And a hydrolyzable group-containing methylpolysiloxane compound.
Si (CHThreeO)ThreeCHTwoCHTwo− (Si (CHThree)TwoO)Ten
-Si (CHThree)TwoCH TwoCHTwoSi (OCHThree)Three Consisting of 0.1N aqueous hydrochloric acid, t-butanol
Co-hydrolyzed in a hydrophilic solvent consisting of hexane and hexane
Prepare one agent. These are silanols (Si-
(OH) group.
【００１６】また、オルガノポリシロキサン（ＨＯ−
（Ｓｉ（ＣＨ3）2Ｏ）30−Ｓｉ（ＣＨ 3）2ＯＨ）と、強
酸としてのメタンスルホン酸との混合物を第２剤として
用意する。Further, the organopolysiloxane (HO-
(Si (CHThree)TwoO)30-Si (CH Three)TwoOH) and strong
Mixture with methanesulfonic acid as acid as second agent
prepare.
【００１７】さらに、抗菌金属４として、硝酸銀（Ａｇ
ＮＯ3）粉末を用意する。Further, silver nitrate (Ag) is used as the antibacterial metal 4.
NO 3 ) Prepare powder.
【００１８】そして、第１剤５ｍｌに硝酸銀粉末２．０
×１０-5ｍｏｌを加え、溶解し、混合剤とする。この
後、その混合剤に第２剤５ｍｌを加えて混合し、防汚処
理剤とする。Then, silver nitrate powder 2.0 was added to 5 ml of the first agent.
× 10 -5 mol is added and dissolved to obtain a mixture. Thereafter, 5 ml of the second agent is added to the mixture and mixed to obtain an antifouling agent.
【００１９】このようにして調製した防汚処理剤を上記
ガラス層２の表面に塗布する。約１０分間、表面の防汚
処理剤を乾燥させる。この後、表面に残った未反応の防
汚処理剤をエタノールで除去する。The antifouling agent thus prepared is applied to the surface of the glass layer 2. The surface antifouling agent is dried for about 10 minutes. Thereafter, the unreacted antifouling agent remaining on the surface is removed with ethanol.
【００２０】こうして、各フィン１０のガラス層２の表
面に撥水性及び抗菌性の両方の機能を兼ね備えた防汚層
３を形成し、防汚処理を施す。Thus, the antifouling layer 3 having both water repellency and antibacterial properties is formed on the surface of the glass layer 2 of each fin 10, and subjected to antifouling treatment.
【００２１】以上のように防汚層３が形成された実施形
態のペルチェ素子装置では、図１に示すように、各フィ
ン１０によって発熱面２１及び冷却面２２の接触面積が
拡大されているため、ペルチェ効果やゼーベック効果が
大きくなり、吸熱及び発熱の程度が大きくなったり、大
きな電力が得られることとなる。In the Peltier device of the embodiment in which the antifouling layer 3 is formed as described above, as shown in FIG. 1, the contact area between the heat generating surface 21 and the cooling surface 22 is increased by each fin 10. Therefore, the Peltier effect and the Seebeck effect are increased, the degree of heat absorption and heat generation is increased, and a large electric power is obtained.
【００２２】この際、このペルチェ素子装置では、各フ
ィン１０の防汚層３によって、その発熱面２１及び冷却
面２２に汚れが付着し難くなっている。このため、ペル
チェ素子２０がペルチェ効果又はゼーベック効果を発揮
し易くなり、ペルチェ素子２０から十分な電力が得られ
たり、ペルチェ素子２０から十分な吸熱や発熱が得られ
ることとなる。At this time, in the Peltier element device, dirt is hardly adhered to the heat generating surface 21 and the cooling surface 22 by the antifouling layer 3 of each fin 10. For this reason, the Peltier device 20 easily exerts the Peltier effect or the Seebeck effect, so that sufficient power can be obtained from the Peltier device 20 or sufficient heat absorption and heat generation can be obtained from the Peltier device 20.
【００２３】また、このペルチェ素子装置では、図２に
示すように、各フィン１０の表面に形成された防汚層３
がフッ素を含有しているため、防汚効果が高い撥水効果
としても現れ、耐水アカ汚れ、耐毛染め液汚れ及び耐ア
ルカリ性に対して効果が高い。また、耐摩耗性に対して
も効果が大きい。In this Peltier device, as shown in FIG. 2, an antifouling layer 3 formed on the surface of each fin 10 is formed.
Since it contains fluorine, it also has a high water-repellent effect with a high antifouling effect, and is highly effective against water stains, hair dye stains and alkali resistance. Further, it has a great effect on wear resistance.
【００２４】さらに、このペルチェ素子装置では、その
防汚層３が硝酸銀である抗菌金属４を含有しているた
め、雑菌の繁殖や汚臭等の発生を抑制することができる
とともに、その汚れを容易に除去する。Further, in this Peltier element device, since the antifouling layer 3 contains the antibacterial metal 4 which is silver nitrate, it is possible to suppress the propagation of various bacteria and the generation of foul odor, and to reduce the fouling. Remove easily.
【００２５】なお、防汚層３は、直接、ペルチェ素子２
０の発熱面２１及び冷却面２２に形成することも可能で
ある。The antifouling layer 3 is directly connected to the Peltier device 2
It is also possible to form them on the heating surface 21 and the cooling surface 22 of zero.
【図１】実施形態のペルチェ素子装置の斜視図である。FIG. 1 is a perspective view of a Peltier device according to an embodiment.
【図２】実施形態の防汚層の拡大断面図である。FIG. 2 is an enlarged sectional view of an antifouling layer of the embodiment.
２１…発熱面 ２２…冷却面 ２０…ペルチェ素子 ３…防汚層 １０…フィン ４…抗菌金属 DESCRIPTION OF SYMBOLS 21 ... Heating surface 22 ... Cooling surface 20 ... Peltier element 3 ... Antifouling layer 10 ... Fin 4 ... Antibacterial metal
フロントページの続き (72)発明者 西川 武 愛知県常滑市鯉江本町５丁目１番地 株式 会社イナックス内Continued on the front page (72) Inventor Takeshi Nishikawa 5-1-1 Koiehoncho, Tokoname-shi, Aichi Prefecture Inax Corporation
Claims (4)
電源又は冷媒若しくは熱媒とするペルチェ素子装置にお
いて、 前記発熱面及び前記冷却面の少なくとも一方には、汚れ
の付着を防止する防汚層が形成されていることを特徴と
するペルチェ素子装置。1. A Peltier device using a Peltier device having a heating surface and a cooling surface as a power source, a cooling medium, or a heating medium, wherein at least one of the heating surface and the cooling surface is prevented from being stained. A Peltier device, wherein a layer is formed.
面積を拡大するフィンをもつことを特徴とする請求項１
記載のペルチェ素子装置。2. The device according to claim 1, wherein at least one of the heating surface and the cooling surface has a fin for increasing a contact area.
A Peltier device according to any one of the preceding claims.
とする請求項１又は２記載のペルチェ素子装置。3. The Peltier device according to claim 1, wherein the antifouling layer contains fluorine.
していることを特徴とする請求項１、２又は３記載のペ
ルチェ素子装置。4. The Peltier device according to claim 1, wherein the antifouling layer contains an antibacterial metal and / or a photocatalyst.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001111845A JP2002310529A (en) | 2001-04-10 | 2001-04-10 | Peltier element device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001111845A JP2002310529A (en) | 2001-04-10 | 2001-04-10 | Peltier element device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002310529A true JP2002310529A (en) | 2002-10-23 |
Family
ID=18963369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001111845A Pending JP2002310529A (en) | 2001-04-10 | 2001-04-10 | Peltier element device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002310529A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006240171A (en) * | 2005-03-04 | 2006-09-14 | Fuji Photo Film Co Ltd | Tenter clip and solution film forming method |
| JP2007123564A (en) * | 2005-10-28 | 2007-05-17 | Kyocera Corp | Heat exchanging device |
| JP2012222120A (en) * | 2011-04-07 | 2012-11-12 | Toyota Industries Corp | Thermoelectric conversion module |
| JP2012222169A (en) * | 2011-04-11 | 2012-11-12 | Panasonic Corp | Power supply device and waterworks monitoring apparatus using the same |
-
2001
- 2001-04-10 JP JP2001111845A patent/JP2002310529A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006240171A (en) * | 2005-03-04 | 2006-09-14 | Fuji Photo Film Co Ltd | Tenter clip and solution film forming method |
| JP2007123564A (en) * | 2005-10-28 | 2007-05-17 | Kyocera Corp | Heat exchanging device |
| JP2012222120A (en) * | 2011-04-07 | 2012-11-12 | Toyota Industries Corp | Thermoelectric conversion module |
| JP2012222169A (en) * | 2011-04-11 | 2012-11-12 | Panasonic Corp | Power supply device and waterworks monitoring apparatus using the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2346678B1 (en) | Spill resistant surfaces having hydrophobic and oleophobic borders | |
| WO2000042961A3 (en) | Water-flux limiting cleansing articles | |
| EP0887323B1 (en) | Selective etching of silicate | |
| JP2006310808A (en) | Method for manufacturing structure of selective atomic layer deposition of zinc oxide | |
| DE602006008195D1 (en) | Scouring cloth for treating a surface | |
| CA2202673A1 (en) | Water repellent surface treatment with acid activation | |
| EP1389814A3 (en) | Semiconductor light-emitting device | |
| JP2005528234A5 (en) | ||
| KR101677024B1 (en) | Antibacterial Hydrophobic Nano-coating Agent for Vacuum Deposition and Method of Coating Using thereof | |
| CA2394626A1 (en) | A cleaning wipe comprising low residue surfactant and hydrophilic polymer | |
| EP1451642A4 (en) | Chemical rinse composition | |
| JP2002151254A (en) | Manufacturing method of organic el element | |
| JP2002310529A (en) | Peltier element device | |
| TW200512315A (en) | Etching solution for titanium-containing layer and method for etching titanium-containing layer | |
| WO2002056351A3 (en) | Polishing of semiconductor substrates | |
| US4670365A (en) | Photomask and method of fabrication thereof | |
| JP2002319673A5 (en) | ||
| JPH0636458B2 (en) | Semiconductor laser device and manufacturing method thereof | |
| JPH0524886A (en) | Water-repellent treatment of glass | |
| ATE511211T1 (en) | POWER SEMICONDUCTOR MODULE WITH HIGH VOLTAGE STRENGTH | |
| ATE271121T1 (en) | CLEANROOM WIPS WITH LOW VOLATILE ORGANIC COMPOUND CONTENT | |
| DE60218924D1 (en) | Vapor deposition of silicon oxide films | |
| JP2004500704A5 (en) | ||
| DE60229597D1 (en) | Processing of thermal inkjet printhead with etching of silicon | |
| KR940003894A (en) | Water repellent glazing and its manufacturing method |