JP2002222802A - Substrate processing method and substrate processor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing method and a substrate processor with which the removal of reaction products and organic substances is completed in a short time. SOLUTION: This substrate processor is provided with an indexer 4 for carrying in a cassette 7 housing a substrate W; a heating processing part 1 for heating the substrate W; a spin processing part 3 having a spin chuck for rotatably holding the substrate W, a removal liquid supply mechanism for supplying removal liquid to the surface of the substrate W, and a pure water supply mechanism for supplying the pure water to the surface of the substrate W; and a pair of carrying mechanisms 5 and 6 for carrying the substrate W from the indexer 4 through the heating processing part 1 to the spin processing part 3.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing method and a substrate processing apparatus for removing organic substances present on a substrate with an organic substance removing liquid. In particular, the present invention relates to a substrate processing method and a substrate processing apparatus for removing a resist from a substrate.

[0002] The present invention also relates to a substrate processing method and a substrate processing apparatus for supplying a reaction product removing liquid to a substrate on which a reaction product generated due to deterioration of a resist is present by removing the substrate. TECHNICAL FIELD The present invention relates to a substrate processing method and a substrate processing apparatus for removing a reaction product generated on a surface of a substrate on which a thin film formed on the surface of the substrate has been patterned by dry etching using a mask as a mask.

[0003]

2. Description of the Related Art In a manufacturing process of a semiconductor device, an etching process of patterning a thin film of a metal such as aluminum or copper formed on a surface of a substrate such as a semiconductor wafer by using a resist film as a mask is performed. Be executed. When a fine circuit pattern is formed in this etching step, RIE
(Reactive Ion Etching / Reactive Ion Etching) or the like is employed.

[0004] Since the power of reactive ions used in such dry etching is extremely strong, the resist film disappears at a fixed rate at the time when the etching of the metal film is completed, and a part of the resist film is made of polymer or the like. It changes into a reaction product and deposits on the side wall of the metal film. Since the reaction product is not removed in the subsequent resist removing step, it is necessary to remove the reaction product before performing the resist removing step.

For this reason, conventionally, after a dry etching step, a removing liquid having an action of removing a reaction product is supplied to the substrate to remove the reaction product deposited on the side wall of the metal film. The product is being removed.

[0006]

With the recent miniaturization of patterns and changes in pre-processes, the nature of organic substances, such as reaction products, adhered to a substrate has diversified, and conventional organic substances have been removed. In the process, there has been a problem that it takes a long time to remove organic substances. For this reason, in recent years,
Removal liquids with improved organic substance removal performance have been developed by using them at temperatures higher than room temperature.However, even when such a removal liquid is used, it may take a long time to remove organic substances. is there.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of completing a removal process of an organic substance, particularly, a resist in a short time. And

Another object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of completing a process for removing a reaction product generated due to deterioration of a resist in a short time. It is an object of the present invention to provide a substrate processing method and a substrate processing apparatus capable of completing a process of removing a reaction product generated by the above process in a short time.

[0009]

According to a first aspect of the present invention, a thin film formed on a surface of a substrate formed by dry etching using a resist film as a mask is patterned and formed on the surface of the substrate. A substrate processing method for removing a reaction product with a removing liquid, comprising: a preheating step of heating a substrate; a removing liquid supplying step of supplying a removing liquid to a surface of the substrate; and a pure water supplying step of supplying pure water to a surface of the substrate. It is characterized by comprising a water supply step and a pure water shaking off step of shaking off pure water attached to the substrate by rotating the substrate in a plane parallel to the main surface thereof.

The invention according to claim 2 is the invention according to claim 1, further comprising a heating and drying step of heating and drying the substrate after the pure water shaking-off step.

According to a third aspect of the present invention, in the second aspect of the present invention, a cooling step of cooling the heated substrate is provided after the heating and drying step.

The invention described in claim 4 is the first to third aspects of the present invention.
In any one of the aspects of the invention, in the removing liquid supplying step, the heated removing liquid is supplied to the substrate.

According to a fifth aspect of the present invention, in the fourth aspect of the invention, in the preheating step, the substrate is heated to a temperature equal to or higher than the temperature of the removing liquid supplied to the substrate in the removing liquid supplying step.

According to a sixth aspect of the present invention, a substrate formed by patterning a thin film formed on the surface by dry etching using a resist film as a mask is used to remove a reaction product generated on the surface of the substrate. A heating means for heating the substrate, a rotation holding means for rotatably holding the substrate, and a removal for supplying a removing liquid toward the surface of the substrate held by the rotation holding means. A liquid supply mechanism; and a pure water supply mechanism for supplying pure water toward a surface of the substrate held by the rotation holding means.

According to a seventh aspect of the present invention, there is provided a method for removing a reaction product generated on a surface of a substrate on which a thin film formed on the surface of the substrate is patterned by dry etching using a resist film as a mask. A substrate processing apparatus for removing a substrate, an indexer unit for carrying in the substrate, a heating processing unit for heating the substrate, rotation holding means for rotatably holding the substrate, and a substrate held by the rotation holding means. A spin processing unit having a removing liquid supply mechanism for supplying a removing liquid toward the surface of the substrate, a pure water supply mechanism for supplying pure water toward the surface of the substrate held by the rotation holding unit, and a substrate. And a transport unit configured to transport the spin processing unit from the indexer unit via the heat processing unit to the spin processing unit.

The invention according to claim 8 is a substrate processing method for removing an organic substance present on a substrate by using a removing liquid,
A preliminary heating step of heating the substrate, a removing liquid supply step of supplying a removing liquid to the substrate, a pure water supply step of supplying pure water to the substrate, and rotating the substrate in a plane parallel to its main surface. And a step of shaking off pure water adhering to the substrate.

A ninth aspect of the present invention is the invention according to the eighth aspect, further comprising a heating and drying step of heating and drying the substrate after the pure water shaking off step.

According to a tenth aspect, in the ninth aspect, a cooling step of cooling the heated substrate is provided after the heating and drying step.

According to an eleventh aspect of the present invention, in the invention according to any one of the eighth to tenth aspects, in the removing liquid supplying step, the heated removing liquid is supplied to the substrate.

According to a twelfth aspect of the present invention, in the invention of the eleventh aspect, in the preheating step, the substrate is heated to a temperature equal to or higher than the temperature of the removing liquid supplied to the substrate in the removing liquid supplying step.

According to a thirteenth aspect of the present invention, in any one of the eighth to thirteenth aspects of the present invention, the organic substance is a reaction product resulting from the deterioration of the resist.

According to a fourteenth aspect of the present invention, there is provided a substrate processing apparatus for removing an organic substance present on a substrate with a removing liquid, wherein the heating means heats the substrate, the rotation holding means rotatably holds the substrate, The apparatus further comprises a removing liquid supply mechanism for supplying a removing liquid to the substrate held by the rotation holding means, and a pure water supply mechanism for supplying pure water to the substrate held by the substrate holding means.

According to a fifteenth aspect of the present invention, there is provided a substrate processing apparatus for removing an organic substance present on a substrate with a removing liquid, comprising: an indexer section for carrying in the substrate; a heat processing section for heating the substrate; Rotation holding means for rotatably holding the liquid, a removing liquid supply mechanism for supplying a removing liquid toward the surface of the substrate held by the rotation holding means, and a removing liquid supply mechanism for holding the rotation holding means to the surface of the substrate held by the rotation holding means. A spin processing unit having a pure water supply mechanism for supplying pure water, and a transport unit that transports the substrate from the indexer unit to the spin processing unit via the heat processing unit are provided.

According to a sixteenth aspect of the present invention, in any one of the fourteenth aspect and the fifteenth aspect, the organic substance is a reaction product generated by alteration of a resist.

[0025]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The configuration of a substrate processing apparatus according to an embodiment of the present invention will be described below. This substrate processing apparatus is for removing a polymer as a reaction product from the surface of a silicon semiconductor wafer as a substrate having a thin film formed on its surface.

Here, the thin film is, for example, a metal film such as copper, aluminum, titanium, tungsten, or a mixture thereof, or an insulating film such as a silicon oxide film, a silicon nitride film, an organic insulating film, or a low dielectric interlayer insulating film. Consists of a membrane. Here, the thin film refers to a thin film whose height is shorter than the length of the bottom in a cross section perpendicular to the main surface of the substrate on which the thin film is formed, and of course, the height is the length of the bottom. Including longer ones. Therefore, a thin film includes a film or a wiring partially formed on the substrate, such as a film or a wiring existing in a line shape or an island shape when facing the main surface of the substrate.

The removing solution used in the substrate processing apparatus is DMF (dimethylformamide), DMSO
(Dimethyl sulfoxide), a liquid containing an organic alkaline liquid such as hydroxylamine, a liquid containing an organic amine, a liquid containing an inorganic acid such as hydrofluoric acid and phosphoric acid, a liquid containing an ammonium fluoride-based substance, and the like can be used. Other removing liquids include 1-methyl-2-pyrrolidone, tetrahydrothiophene 1.1-dioxide, isopropanolamine, monoethanolamine, 2- (2aminoethoxy) ethanol, catechol, N-methylpyrrolidone, and aromatic diol. , Perclene, a liquid containing phenol, and more specifically, 1-methyl-
2-mixture of pyrrolidone, tetrahydrothiophene 1.1-dioxide and isopropanolamine, mixture of dimethylsulfoxide and monoethanolamine, 2-
A mixed solution of (2aminoethoxy) ethanol, hydroxyamine and catechol, a mixed solution of 2- (2aminoethoxy) ethanol and N-methylpyrrolidone, a mixed solution of monoethanolamine, water and an aromatic diol,
A mixture of perchrene and phenol may be used.

The liquid containing an organic amine (referred to as an organic amine-based removing liquid) includes a mixed solution of monoethanolamine, water and aromatic triol, and 2- (2-aminoethoxy) ethanol, hydroxyamine, catechol. Mixed solution of alkanolamine, water, dialkyl sulfoxide, hydroxyamine and amine anticorrosive, mixed solution of alkanolamine, glycol ether and water, dimethyl sulfoxide, hydroxyamine, triethylenetetramine, pyrocatechol and water Mixed solution of water, hydroxyamine and pyrogallol, mixed solution of 2-aminoethanol, ethers and sugar alcohols, 2- (2-aminoethoxy) ethanol, N, N-dimethylacetoacetamide and water And triethanolamid There is a mixed solution of.

Further, a liquid containing an ammonium fluoride-based substance (referred to as an ammonium fluoride-based removal liquid) includes a mixed solution of an organic alkali, a sugar alcohol and water, a fluorine compound, an organic carboxylic acid, and an acid / amide solvent. A mixed solution of alkyl amide, water and ammonium fluoride, a mixed solution of dimethyl sulfoxide, 2-aminoethanol, an organic alkali aqueous solution and an aromatic hydrocarbon, a mixed solution of dimethyl sulfoxide, ammonium fluoride and water Solution, mixed solution of ammonium fluoride, triethanolamine, pentamethyldiethylenetriamine, iminodiacetic acid and water, mixed solution of glycol, alkyl sulfate, organic salt, organic acid and inorganic salt, amide, organic salt, organic acid and inorganic salt And a mixed solution of an amide, an organic salt, an organic acid, and an inorganic salt.

Further, as the inorganic removal liquid containing an inorganic substance, there is a mixed solution of water and a phosphoric acid derivative.

First, the overall configuration of the substrate processing apparatus will be described. FIG. 1 is a perspective view of a substrate processing apparatus according to the present invention.

The substrate processing apparatus includes an indexer unit 4 for carrying in a cassette 7 containing a plurality of substrates W.
And four heat processing units 1 for heating the substrate W, two cooling processing units 2 for cooling the substrate W, and two spin processing units 3 for processing the substrate W with a removing liquid or the like. A cassette 7 on which the substrate W is placed on the indexer unit 4, a heating processing unit 1, a cooling processing unit 2, and a pair of transport mechanisms 5 and 6 for transporting the substrate W among the spin processing unit 3 are provided.

The substrate W stored in the cassette 7 and transferred to the substrate processing apparatus is taken out of the cassette 7 by the transfer mechanism 6 and transferred to the transfer mechanism 5. And this substrate W
After being preheated by the heat treatment unit 1, a reaction product is removed in the spin treatment unit 3. Then, the substrate W is heated and dried in the heat processing section 1 and cooled in the cooling processing section 2, passed from the transport mechanism 5 to the transport mechanism 6, and stored in the cassette 7. Such processing operation will be described later in detail.

Next, the configuration of the heating section 1 will be described. FIG. 2 is a perspective view illustrating a main part of the above-described heat treatment unit 1.

In the housing of the heating section 1,
A heating plate 12 is provided. The heating plate 12 has a plate heater inside. The heating plate 12 has three through holes 13 formed therein. Then, three support pins 14 are arranged to be able to move up and down through the through holes 13.

The three support pins 14 are made of a heat-resistant insulating material such as fluororesin, ceramics, or polyimide resin, and are supported on the support arm 15 at positions opposed to the peripheral edge of the back surface of the substrate W supported thereon. It is erected in. The support arm 15 is connected to the air cylinder 16. For this reason, the air cylinder 1
6, the support pin 14 is moved to a transfer position of the substrate W whose tip projects from the surface of the heating plate 12,
The tip moves up and down between the heating processing position of the substrate W stored in the communication hole 13 in the heating plate 12.

On the surface of the heating plate 12, three spheres 17 are embedded. The sphere 17 is made of, for example, a low heat transfer member such as alumina or matateite. The upper end of the sphere 17 is provided so as to protrude by a minute amount from the surface of the heating plate 12, and maintains a minute gap called a proximity gap between the substrate W and the surface of the heating plate 12. In this state, the substrate W is placed and supported on the sphere 17 of the heating plate 12, and the substrate W
Is configured to be heated.

When the substrate W is carried into the heating plate 12, the support pins 14 are
Is raised to the substrate transfer position. Then, the substrate W is transported by the transport mechanism 5 shown in FIG.
Is placed on the support pins 14. And the air cylinder 1
By the drive of 6, the support pin 14 is lowered to the heating position.

The substrate W is a sphere 1 on the heating plate 12.
7 and the heating process is completed, the support pins 14 are raised to the transfer position of the substrate.
The substrate W is separated from the heating plate 12. When the substrate W rises above the heating plate 12, the substrate W is received from above the support pins 14 by the transport mechanism 5 shown in FIG. 1 and is transported to a subsequent processing step.

The cooling section 2 shown in FIG. 1 has the same configuration as the heating section 1. However, in the cooling processing unit 2, a cooling plate having a built-in plate cooler using a Peltier element or the like is provided instead of the heating plate having the built-in plate heater, so that the substrate W can be cooled. I have.

Next, the configuration of the spin processing unit 3 will be described. FIG. 3 is a schematic plan view of the spin processing unit 3. 4 to 6 are schematic views of the spin processing unit 3 as viewed from the side. 4 shows the relationship between the removing liquid supply mechanism 30, the spin chuck 70, and the scattering prevention cup 73, and FIG. 5 shows the relationship between the brush cleaning mechanism 40, the spin chuck 70, and the scattering prevention cup 73. , FIG.
Shows the relationship between the pure water supply mechanism 50, the spin chuck 70, and the scattering prevention cup 73. In these figures, the scattering prevention cup 73 and the back surface cleaning nozzle 7 are shown.
4 is shown in cross section.

The spin processing section 3 includes a spin chuck 70 for rotatably holding the substrate W, and a spin chuck 70.
A removing liquid supply mechanism 30 for supplying a removing liquid toward the surface of the substrate W held by the spin chuck 70; a brush cleaning mechanism 40 for cleaning the surface of the substrate W held by the spin chuck 70 by the rotating brush 41; Substrate W held in
And a pure water supply mechanism 50 that supplies pure water toward the surface of the device.

As shown in FIGS. 4 to 6, the spin chuck 70 rotates about a vertical support shaft 72 driven by a motor 71 in a state where the substrate W is sucked and held on the upper surface thereof. Thus, the substrate W rotates together with the spin chuck 70 in a plane parallel to the main surface.

On the outer periphery of the spin chuck 70, a scattering prevention cup 73 is provided. The scattering prevention cup 73 has a substantially U-shaped cross section, and has a substantially ring-like shape having an opening at a central portion in plan view. An opening 75 is formed on the bottom surface of the scattering prevention cup 73 to be connected to a drain (not shown).

A back surface cleaning nozzle 74 for cleaning the back surface of the substrate W by supplying pure water to the back surface of the substrate W is provided at a position facing the back surface of the substrate W in the scattering prevention cup 73. Are arranged. The back surface cleaning nozzle 74 is connected to a pure water supply unit 57 through an electromagnetic valve 76.
Is connected to The pure water supply section 57 is configured to be able to pump pure water.

The removing liquid supply mechanism 30 includes a removing liquid discharge nozzle 31 for discharging the removing liquid toward the substrate W, as shown in FIG. The removal liquid discharge nozzle 31 is provided at the tip of an arm 34 that swings about a vertical axis 33 by driving a nozzle moving mechanism 32. Therefore, the removing liquid discharge nozzle 31 can reciprocate between a position facing the rotation center of the substrate W held and rotated by the spin chuck 70 and a position facing the edge of the substrate W. I have. The nozzle moving mechanism 32
Has a configuration in which the arm 34 can be moved in the vertical direction.

Further, the removing liquid discharge nozzle 31 is
6 and is connected to the supply section 37 of the removing liquid. The removing liquid supply unit 37 is configured to be capable of pumping the removing liquid heated to a predetermined temperature. Reference numeral 35 denotes a tube for supplying the removing liquid.

The brush cleaning mechanism 40 includes a rotary brush 41 for cleaning the surface of the substrate W, as shown in FIG. The rotating brush 41 has a rotating brush moving mechanism 42.
Is disposed at the tip of an arm 44 that swings about a shaft 43 that faces in the vertical direction by the drive. Therefore, the rotating brush 41 can reciprocate between a position facing the rotation center of the substrate W held by the spin chuck 70 and rotating, and a position facing the edge of the substrate W.
The rotating brush moving mechanism 42 is configured to move the arm 44 in the vertical direction.

The rotary brush 41 is configured to rotate about a vertical rotating shaft 45 by driving a motor 46 disposed at the tip of an arm 44. As shown in FIG. 5, the lower end of the rotating brush 41 is in contact with the surface of the substrate W held by the spin chuck 70 or at a small distance from the surface of the substrate W held by the spin chuck 70. It can be arranged at a position only separated. Therefore, in such a position, the rotating brush 4
1 is rotated, the arm 44 is reciprocated between a position where the rotating brush 41 faces the rotation center of the substrate W and a position where the rotating brush 41 faces the edge of the substrate W, so that the entire surface of the substrate W is covered. Can be washed by the rotating brush 41.

As shown in FIGS. 3 and 5, a pure water jet for supplying pure water to the surface of the substrate W when the substrate W is cleaned by the rotating brush 41 is located at a position facing the brush cleaning mechanism 41. A nozzle 47 is provided. The pure water jet nozzle 47 is connected to the pure water supply unit 5 via an electromagnetic valve 48.
7 is connected.

The pure water supply mechanism 50 is, as shown in FIG.
Pure water discharge nozzle 5 for discharging pure water toward substrate W
1 is provided. The pure water discharge nozzle 51 is provided at the tip of an arm 54 that swings about a shaft 53 that is oriented vertically by driving a nozzle moving mechanism 52. For this reason, the pure water discharge nozzle 51 can reciprocate between a position facing the rotation center of the substrate W held and rotated by the spin chuck 70 and a position facing the edge of the substrate W. I have. The nozzle moving mechanism 52 includes an arm 54
Can also be moved in the vertical direction.

The pure water discharge nozzle 51 is provided with a solenoid valve 56.
Is connected to the pure water supply unit 57 via the. Reference numeral 55 denotes a tube for supplying pure water.

Next, a control mechanism of the above-described substrate processing apparatus will be described. FIG. 7 is a block diagram showing a main electrical configuration of the above-described substrate processing apparatus.

This substrate processing apparatus has a control unit 80 comprising a ROM 81 in which an operation program necessary for controlling the apparatus is stored, a RAM 82 in which data and the like are temporarily stored during control, and a CPU 83 for executing a logical operation. Is provided.
The control unit 80 controls the solenoid valves 36, 48, 5 in the spin processing unit 3 via the interface 84.
A solenoid valve driving unit 85 for driving the motors 6 and 76;
Motor driving unit 86 for driving the nozzle 70 and the nozzle moving mechanism 3
2. It is connected to a moving mechanism driving section 87 that drives the brush moving mechanism 42 and the nozzle moving mechanism 52. Also,
The control unit 80 is also connected to the above-described heating processing unit 1 and cooling processing unit 2 via an interface 84.

Next, the substrate W by the substrate processing apparatus described above is used.
The processing operation for removing the reaction product from the reaction will be described. FIG. 8 is a flowchart showing the processing operation of the substrate W by the substrate processing apparatus.

When removing a reaction product generated on a surface of a substrate W on which a thin film formed on the surface is patterned by dry etching using a resist film as a mask by using this substrate processing apparatus. First, a preheating step is performed (step S1). In this preheating step, after the substrate W in the cassette 7 placed on the indexer unit 4 is taken out by the transport mechanism 6, the substrate W is taken out.
It is carried out by being conveyed to the heat treatment unit 1 by the conveyance mechanism 5 and heated at a heating position on the heating plate 12 shown in FIG.

In this preheating step, the substrate W
Is heated to a predetermined set temperature. The set temperature is set to a temperature at which the temperature of the substrate W becomes equal to or higher than the temperature of the removing liquid when the substrate W is supplied with the removing liquid in a removing liquid supplying step described later (however, a temperature lower than the boiling point of the removing liquid). Just set it.

Preferably, when the substrate W is supplied with the removing liquid, the temperature of the substrate W is set to be substantially the same as the temperature of the removing liquid. Here, the heat treatment unit 1
Since the amount of heat lost by the substrate W during the transfer of the substrate W from the substrate to the spin processing unit 3 is small, the set temperature is set to the same temperature as the temperature of the removing liquid. That is, since the removal liquid of 80 degrees Celsius is supplied to the substrate W in the removal liquid supply step, the set temperature is set to 80 degrees Celsius.

However, when the temperature of the substrate W decreases during the transfer of the substrate W from the heat processing unit 1 to the spin processing unit 3, the set temperature is higher than the temperature of the removing liquid by the amount reduced during the transfer. Preferably, it is a temperature.

When the preliminary heating process on the substrate W is completed, the heated substrate W is transported by the transport mechanism 5 onto the spin chuck 70 of the spin processing section 3 shown in FIGS.

Then, in the spin processing section 3, first, a removing liquid supply step (step S2) is executed. In the removing liquid supply step, the substrate W is held by the spin chuck 70 and rotated at a low speed. Then, the driving of the nozzle moving mechanism 32 in the removing liquid supply mechanism 30 causes the removing liquid discharge nozzle 31 to face the rotation center of the substrate W held by the spin chuck 70 and rotating;
The substrate W is reciprocated between an edge thereof and a position opposing the edge, and the electromagnetic valve 36 is opened to remove the removal liquid discharge nozzle 3.
The removal liquid is discharged from 1. Thus, the removing liquid heated to a predetermined temperature (here, 80 degrees Celsius) or higher from room temperature (about 23 degrees) from the removing liquid supply unit 37 is applied to the entire surface of the substrate W that is rotated while being held by the spin chuck 70. Supplied. Most of the reaction products generated on the surface of the substrate W are removed by this removing liquid supply step.

At this time, the substrate W to which the removing liquid is supplied is
Since the pre-heating step is performed in advance in the pre-heating step, the temperature of the removing liquid does not decrease after the contact with the substrate W. For this reason, the function of removing the reaction product by the heated removing liquid can be improved.

In addition, since the temperature of the substrate W is substantially the same as the temperature of the removing liquid, there is no change in the temperature of the removing liquid supplied to the substrate W. Therefore, from the beginning of the removal liquid supply step, the removal liquid comes into contact with the reaction product at a temperature at which a high removal function is exhibited. Therefore, the reaction product can be quickly removed, and the throughput is improved.

Next, the substrate W is rotated at a high speed to execute a removing liquid shaking-off step of shaking off the removing liquid adhering to the substrate W (step S3). In the removing liquid shaking-off step, the substrate W is rotated at 500 rpm or more, preferably 1000 rpm by the spin chuck 70.
The rotation is performed at a rotation speed of 4,000 rpm to 4,000 rpm.

The removal liquid shaking-off step is performed after the removal liquid supply step for the following reason. That is, when an organic alkaline solution is used as the removing solution, if the removing solution remaining on the substrate W is mixed with pure water, a phenomenon called “pH shock” in which a strong alkali is generated occurs. Damage metal wiring. Therefore, it is impossible to continuously execute the above-described removing liquid supply step and the later-described brush cleaning step using pure water. The removal liquid is removed once from above, and the substrate W
It is necessary to supply pure water to the brush and perform the brush cleaning step. For this reason, the intermediate rinsing liquid supply step takes time,
In addition, there is a problem that the cost is increased due to the use of a large amount of the intermediate rinsing liquid.

However, in this embodiment,
Since the removing liquid shaking-off step is performed subsequent to the removing liquid supplying step, the above-described intermediate rinsing step can be omitted, and even when the intermediate rinsing step is performed, a small amount of the intermediate rinsing liquid supplying step is required. Can be completed in a short time by using only the intermediate rinsing liquid.

When the removal liquid shaking-off step is completed, a brush cleaning step is executed (step S4). In this brush cleaning step, the substrate W is held by the spin chuck 70 and rotated at a low speed. Further, the electromagnetic valve 48 is opened, and pure water is ejected from the pure water ejection nozzle 47 to the surface of the substrate W which is held by the spin chuck 70 and rotates. Then, the rotating brush 41 is rotated by the driving of the motor 46 in the brush cleaning mechanism 40, and the rotating brush 41 is brought into contact with the rotation center of the substrate W held by the spin chuck 70 and rotated by the driving of the brush moving mechanism 42. The substrate W is reciprocated between a position and a position where it comes into contact with the edge of the substrate W. Accordingly, the entire surface of the substrate W that is held and rotated by the spin chuck 70 is cleaned by the rotating brush 41. By this brush cleaning step, reaction products remaining on the surface of the substrate W are quickly removed.

Instead of bringing the lower end of the rotating brush 41 into contact with the rotating substrate W held by the spin chuck 70, the lower end of the rotating brush 41 and the surface of the substrate W are separated by a small distance. The substrate W may be disposed at a position to clean the surface of the substrate W. In the case of such a configuration, without giving an impact to the surface of the substrate W,
The surface of the substrate W can be cleaned with pure water existing between the lower end of the rotating brush 41 and the surface of the substrate W.

When the brush cleaning step is completed, a pure water supply step is executed (step S5). In this pure water supply step, the substrate W is held by the spin chuck 70 and rotated at a low speed. Then, the pure water discharge nozzle 51 is driven by the driving of the nozzle moving mechanism 52 in the pure water supply mechanism 50.
Is reciprocated between a position opposed to the center of rotation of the substrate W held and rotated by the spin chuck 70 and a position opposed to the edge of the substrate W, and the electromagnetic valve 56 is opened to release pure water. Pure water is discharged from the discharge nozzle 51. Thus, pure water is supplied from the pure water supply unit 57 to the entire surface of the substrate W that is held and rotated by the spin chuck 70. In the pure water supply step, the surface of the substrate W is cleaned.

In the above-described removal liquid supply step (step S2), brush cleaning step (step S4) and pure water supply step (step S5), the electromagnetic valve 76 is opened, and the spin chuck 70 is moved from the back surface cleaning nozzle 74. The pure water is supplied to the back surface of the substrate W that is held while rotating. This makes it possible to prevent the reaction products and the like removed from the front surface of the substrate W from flowing around to the rear surface side of the substrate W.

Then, by rotating the substrate W at a high speed, a pure water shaking-off step of shaking off and removing pure water adhering to the substrate W is executed (step S6). In this pure water shaking-off step, the substrate W is kept at 500 rpm or more, preferably 1000 rpm to 4 rpm by the spin chuck 70.
Rotate at a rotation speed of 000 rpm.

When the above steps are completed, the transport mechanism 5 transports the substrate W from the spin processor 3 to the heat processor 1. Then, the heating and drying step is performed in the heating processing section 1 (step S7). In the heating and drying step, the substrate W is heated at a heating position on the heating plate 12, and pure water that cannot be completely removed in the pure water shaking-off step is dried and removed.

Therefore, the substrate W after removing the reaction products is removed.
In this case, it is possible to prevent the problem that pure water remains in the metal pattern portion to generate an oxide. Further, even when the substrate W is transferred to a processing step for performing processing under vacuum conditions such as CVD, the substrate W
Pure water adhering to the surface does not adversely affect the treatment. In the heating and drying step, the substrate W is heated to a temperature of, for example, about 150 degrees Celsius.

When the heating and drying process on the substrate W is completed, the heated substrate W is transported to the cooling processing unit 2 by the transport mechanism 5. Then, in the cooling processing unit 2, the heated substrate W is cooled to a temperature of about normal temperature which does not hinder the subsequent processing. The cooled substrate W is taken out of the cooling processing unit 2 by the transport mechanism 5 and stored in the cassette 7 by the transport mechanism 6.

The substrate processing apparatus of this embodiment includes a heating plate 12 as a heating means. As the heating means, a heating gas (heated air or a heated inert gas such as nitrogen gas or argon gas) is applied to the substrate. ) Can be used. In this case, a gas nozzle may be provided in the heat processing section 1 or in the spin processing section 3.

When the gas nozzle is provided in the spin processing section 3, the preheating step or the heating and drying step can be performed in the spin processing section, so that the heating plate 12 becomes unnecessary. In addition, since the time for transporting the substrate W between the heating plate 12 and the spin processing unit 3 is not required, the throughput is improved.

In this case, if the substrate W is rotated in the preheating step and the heating / drying step, the heat is transmitted relatively uniformly on the surface of the substrate W, so that the in-plane uniformity of the processing is improved.

When a heating gas nozzle is provided in the spin processing unit 3, the gas nozzle is connected to the arm 34 or the arm 4.
4 or the arm 54.

In particular, when a gas nozzle is provided at the tip of the arm 34 constituting the removing liquid supply mechanism 30, the solenoid valve 36 is opened immediately after the gas nozzle is opposed to the substrate W and the heating gas is supplied to the substrate in the preheating step. Then, since the removing liquid discharge nozzle 31 has already reached the position facing the substrate, the removing liquid can be supplied while the temperature of the substrate W does not decrease much. For this reason, only the minimum energy required for heating the substrate W is required. Further, since the time from the preheating step to the removal liquid supply step can be shortened, the throughput is improved.

In the above embodiment, the removal of the polymer generated at the time of dry etching from the substrate subjected to the dry etching step is disclosed. It is not limited to removing the polymer.

For example, the present invention includes a case where a polymer generated during plasma ashing is removed from a substrate.
Therefore, the present invention includes a case where the polymer generated due to the resist is removed from the substrate in various processes that are not necessarily dry etching.

Further, the present invention is not limited to the removal of only the polymer produced by the processing by dry etching or plasma ashing, but may be applied to the case where various reaction products derived from the resist are removed from the substrate. Including.

For example, a case where the impurity diffusion treatment is performed on a portion of the thin film which is not covered with the resist film using the resist film as a mask will be described. Such an impurity diffusion process includes, for example, ion implantation. However, in a substrate subjected to such a process, a resist film is present below a resist film, and a resist film is not limited to a portion of the thin film which is not covered with the resist film. Ions also enter. As a result, part or all of the resist is deteriorated, and is referred to as a "reaction product generated by the deterioration of the resist" according to the present invention. Such a reaction product is also an organic substance and is to be removed.

The present invention is not limited to removing the reaction product derived from the resist from the substrate, but also includes removing the resist itself from the substrate.

For example, for a substrate on which a resist is applied, a pattern (a wiring pattern or the like) is exposed on the resist, the resist film is developed, and a lower layer present below the resist is subjected to lower layer processing. This includes the case where the lower layer processing is completed and the unnecessary resist film is removed.

More specifically, this includes the case where, for example, an etching process is performed on the thin film as the lower layer after the resist film is developed. Regardless of whether the etching process at this time is wet etching performed by supplying an etching solution or dry etching such as RIE, the resist film is unnecessary after the etching process and must be removed. . A resist removal process after such an etching process is also included.

In addition, when the impurity is diffused as a lower layer process to the thin film as a lower layer after the resist film is developed, the resist film becomes unnecessary after the impurity diffusion process, so it is necessary to remove the resist film. However, the resist removal process at this time is also included.

In these cases, the unnecessary resist film is removed, and at the same time, any reaction products generated by the deterioration of the resist film can be removed at the same time, so that the throughput is improved and the cost is reduced. Can be reduced.

For example, in the above etching process, when dry etching is performed on a thin film as a lower layer, a reaction product derived from a resist is also generated. Therefore,
The resist film itself used for masking the lower thin film at the time of dry etching and the reaction product generated by the deterioration of the resist film can be simultaneously removed.

Also, when an impurity diffusion treatment (particularly, ion implantation) is performed on the lower thin film, a reaction product derived from the resist is generated. Therefore, the resist film itself used for masking the lower layer during the impurity diffusion treatment and the reaction product generated by the deterioration of the resist film can be removed at the same time.

The present invention is not limited to removing the reaction product derived from the resist and the resist itself from the substrate, but also removes organic substances not derived from the resist, for example, fine contaminants generated from the human body from the substrate. Including.

[0092]

According to the first, eighth, and thirteenth aspects of the present invention, since the preheating step for heating the substrate is provided, the temperature of the removing liquid supplied to the substrate can be prevented from lowering. Thus, the removal of reaction products and organic substances can be completed in a short time.

According to the second and ninth aspects of the invention, since the heating and drying step of heating and drying the substrate is provided, the pure water which cannot be completely removed in the pure water shaking off step is dried and removed. It is possible to do.

According to the third and tenth aspects of the present invention, since the cooling step of cooling the heated substrate is provided, the heated substrate is cooled to a temperature that does not adversely affect the subsequent processing steps. It becomes possible to cool.

According to the fourth and eleventh aspects of the present invention, the substrate is heated in the preheating step, and the removing liquid heated in the removing liquid supplying step is supplied to the substrate. For this reason, it is possible to suppress a decrease in the temperature of the heated removal liquid and complete the removal treatment of the reaction products and organic substances in a shorter time.

According to the fifth and twelfth aspects of the invention, in the preheating step, the substrate is heated to a temperature equal to or higher than the temperature of the removing liquid supplied to the substrate. For this reason, it is possible to prevent the temperature of the removal liquid supplied to the substrate from lowering and complete the removal process of the reaction products and organic substances in a shorter time.

According to the sixth, fourteenth and sixteenth aspects of the invention, the heating means for heating the substrate, the rotation holding means for rotatably holding the substrate, and the substrate held by the rotation holding means Since a removing liquid supply mechanism that supplies the removing liquid toward the surface of the substrate, and a pure water supply mechanism that supplies pure water toward the surface of the substrate held by the rotation holding means,
It is possible to prevent the temperature of the removal liquid supplied to the substrate from lowering and complete the removal of the reaction products and organic substances in a short time.

According to the seventh and fifteenth aspects of the present invention, the indexer section for carrying in the substrate, the heat processing section for heating the substrate, the rotation holding means for rotatably holding the substrate, Spin processing having a removing liquid supply mechanism for supplying a removing liquid toward the surface of the substrate held by the holding means, and a pure water supply mechanism for supplying pure water toward the surface of the substrate held by the rotating holding means Unit, and a transport unit that transports the substrate from the indexer unit to the spin processing unit via the heat processing unit, thereby preventing the temperature of the removal liquid supplied to the substrate from decreasing, thereby preventing the reaction product. And the removal of organic substances can be completed in a short time.

[Brief description of the drawings]

FIG. 1 is a perspective view of a substrate processing apparatus according to the present invention.

FIG. 2 is a perspective view showing a main part of the heat treatment unit 1.

FIG. 3 is a schematic plan view of a spin processing unit 3;

FIG. 4 is a schematic view of the spin processing unit 3 as viewed from the side.

FIG. 5 is a schematic view of the spin processing unit 3 as viewed from the side.

FIG. 6 is a schematic view of the spin processing unit 3 as viewed from the side.

FIG. 7 is a block diagram illustrating a main electrical configuration of the substrate processing apparatus.

FIG. 8 is a flowchart illustrating a processing operation of the substrate W by the substrate processing apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Heat processing part 2 Cooling part 3 Spin processing part 4 Indexer part 5 Transport mechanism 6 Transport mechanism 7 Cassette 12 Heating plate 14 Support pin 15 Support arm 16 Air cylinder 17 Sphere 30 Removal liquid supply mechanism 31 Removal liquid discharge nozzle 37 Removal liquid Supply unit 40 brush cleaning mechanism 41 rotating brush 47 pure water ejection nozzle 50 pure water supply mechanism 51 pure water discharge nozzle 57 pure water supply unit 70 spin chuck 73 scattering prevention cup 80 control unit 85 electromagnetic valve drive unit 86 motor drive Unit 87 moving mechanism drive unit W board

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/027 H01L 21/304 651A 21/304 643 21/302 N 651 21/30 572B (72) Inventor Seiichiro Okuda 4-1-1 Tenjin Kitamachi, Horikawa-dori Teranouchi, Kamigyo-ku, Kyoto 1 Dai Nippon Screen Manufacturing Co., Ltd. (72) Inventor Kuroda Takuya 4-chome, Tenjin Kitamachi 1-chome Horikawa-dori Teranouchi, Kamigyo-ku, Kyoto Address No. 1 Dainippon Screen Mfg. Co., Ltd. F-term (reference) 2H096 AA25 HA23 JA04 LA02 4D075 AC64 AC79 BB14Z BB18Z BB20Z BB22Y BB23Y BB24Z BB63Z BB65Z BB66X BB69Z BB79Z CA47 DA08 DC22 A04 DC04 DA04 CC04 DA07 EB09 EB25 EB30 5F004 AA14 FA08 5F046 MA03

Claims (16)

[Claims] 1. A substrate processing method for removing a reaction product generated on a surface of a substrate on which a thin film formed on the surface thereof is patterned by dry etching using a resist film as a mask, using a removing liquid. A preheating step of heating the substrate, a removing liquid supplying step of supplying a removing liquid to the surface of the substrate, a pure water supplying step of supplying pure water to the surface of the substrate, A pure water shaking-off step of shaking off pure water attached to the substrate by rotating in a plane. 2. The substrate processing method according to claim 1, further comprising a heating and drying step of heating and drying the substrate after the pure water shaking-off step. 3. The substrate processing method according to claim 2, further comprising a cooling step of cooling the heated substrate after the heating and drying step. 4. The substrate processing method according to claim 1, wherein in the removing liquid supplying step, a heated removing liquid is supplied to the substrate. 5. The substrate processing method according to claim 4, wherein in the preheating step, the substrate is heated to a temperature equal to or higher than a temperature of a removing liquid supplied to the substrate in the removing liquid supplying step. Processing method. 6. A substrate processing apparatus for removing a reaction product generated on a surface of a substrate from a patterned thin film formed on the surface by dry etching using a resist film as a mask with a removing liquid. Heating means for heating the substrate; rotation holding means for rotatably holding the substrate; a removing liquid supply mechanism for supplying a removing liquid toward the surface of the substrate held by the rotation holding means; A substrate processing apparatus, comprising: a pure water supply mechanism that supplies pure water toward a surface of the substrate held by the holding unit. 7. A substrate processing apparatus for removing a reaction product generated on a surface of a substrate from a patterned thin film formed on the surface by dry etching using a resist film as a mask with a removing liquid. An indexer unit for carrying in the substrate, a heat treatment unit for heating the substrate, a rotation holding unit for rotatably holding the substrate, and a removing liquid toward the surface of the substrate held by the rotation holding unit. A spin processing unit having a removing liquid supply mechanism for supplying the pure water, a pure water supply mechanism for supplying pure water toward the surface of the substrate held by the rotation holding means, and a heat treatment for the substrate from the indexer unit. A transfer unit that transfers the spin processing unit to the spin processing unit via a unit. 8. A substrate processing method for removing an organic substance present on a substrate with a removing liquid, comprising: a preheating step of heating the substrate; a removing liquid supplying step of supplying the removing liquid to the substrate; A pure water supply step of supplying, and a pure water shaking off step of shaking off pure water attached to the substrate by rotating the substrate in a plane parallel to the main surface thereof. . 9. The substrate processing method according to claim 8, further comprising a heating and drying step of heating and drying the substrate after the pure water shaking-off step. 10. The substrate processing method according to claim 9, further comprising a cooling step of cooling the heated substrate after the heating and drying step. 11. The substrate processing method according to claim 8, wherein in the removing liquid supplying step, a heated removing liquid is supplied to the substrate. 12. The substrate processing method according to claim 11, wherein in the preheating step, the substrate is heated to a temperature equal to or higher than a temperature of a removing liquid supplied to the substrate in the removing liquid supplying step. 13. The substrate processing method according to claim 8, wherein the organic substance is a reaction product generated by alteration of a resist. 14. A substrate processing apparatus for removing an organic substance present on a substrate with a removing liquid, comprising: a heating unit for heating the substrate; a rotation holding unit for rotatably holding the substrate; A substrate processing apparatus, comprising: a removing liquid supply mechanism that supplies a removing liquid to a substrate that has been removed; and a pure water supply mechanism that supplies pure water to the substrate held by the substrate holding means. 15. A substrate processing apparatus for removing an organic substance present on a substrate with a removing liquid, comprising: an indexer section for carrying in the substrate; a heating processing section for heating the substrate; and a rotation for rotatably holding the substrate. Holding means, a removing liquid supply mechanism for supplying a removing liquid toward the surface of the substrate held by the rotation holding means, and pure water for supplying pure water toward the surface of the substrate held by the rotation holding means A substrate processing apparatus, comprising: a spin processing unit having a supply mechanism; and a transfer unit configured to transfer a substrate from the indexer unit to the spin processing unit via the heat processing unit. 16. The substrate processing apparatus according to claim 14, wherein the organic substance is a reaction product generated by alteration of a resist.