JP2002219432A - Solvent mixture for removal of high purity precursor - Google Patents
Solvent mixture for removal of high purity precursorInfo
- Publication number
- JP2002219432A JP2002219432A JP2001300498A JP2001300498A JP2002219432A JP 2002219432 A JP2002219432 A JP 2002219432A JP 2001300498 A JP2001300498 A JP 2001300498A JP 2001300498 A JP2001300498 A JP 2001300498A JP 2002219432 A JP2002219432 A JP 2002219432A
- Authority
- JP
- Japan
- Prior art keywords
- solvent
- manifold
- purity raw
- chemical
- high purity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011877 solvent mixture Substances 0.000 title claims description 13
- 239000002243 precursor Substances 0.000 title description 33
- 239000002904 solvent Substances 0.000 claims abstract description 121
- 239000000126 substance Substances 0.000 claims abstract description 99
- 238000000034 method Methods 0.000 claims abstract description 60
- 238000010926 purge Methods 0.000 claims abstract description 31
- 239000000203 mixture Substances 0.000 claims abstract description 26
- 238000004140 cleaning Methods 0.000 claims abstract description 18
- 239000011261 inert gas Substances 0.000 claims abstract description 12
- 239000002994 raw material Substances 0.000 claims abstract description 12
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 claims description 33
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 19
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 18
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 15
- 229960004624 perflexane Drugs 0.000 claims description 14
- ZJIJAJXFLBMLCK-UHFFFAOYSA-N perfluorohexane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F ZJIJAJXFLBMLCK-UHFFFAOYSA-N 0.000 claims description 14
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 12
- -1 dimethylsiloxane Chemical class 0.000 claims description 12
- 229930195733 hydrocarbon Natural products 0.000 claims description 11
- 150000002430 hydrocarbons Chemical class 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 10
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 9
- 150000001298 alcohols Chemical class 0.000 claims description 9
- VJDVOZLYDLHLSM-UHFFFAOYSA-N diethylazanide;titanium(4+) Chemical compound [Ti+4].CC[N-]CC.CC[N-]CC.CC[N-]CC.CC[N-]CC VJDVOZLYDLHLSM-UHFFFAOYSA-N 0.000 claims description 9
- 239000004215 Carbon black (E152) Substances 0.000 claims description 8
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 8
- 150000002170 ethers Chemical class 0.000 claims description 8
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 7
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 claims description 7
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 claims description 6
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 claims description 6
- 150000002148 esters Chemical class 0.000 claims description 6
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical group FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 6
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 claims description 6
- WRECIMRULFAWHA-UHFFFAOYSA-N trimethyl borate Chemical compound COB(OC)OC WRECIMRULFAWHA-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 5
- 150000002576 ketones Chemical class 0.000 claims description 5
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims description 5
- AJSTXXYNEIHPMD-UHFFFAOYSA-N triethyl borate Chemical compound CCOB(OCC)OCC AJSTXXYNEIHPMD-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 4
- 150000001299 aldehydes Chemical class 0.000 claims description 4
- LGUZHRODIJCVOC-UHFFFAOYSA-N perfluoroheptane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F LGUZHRODIJCVOC-UHFFFAOYSA-N 0.000 claims description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 4
- CYTQBVOFDCPGCX-UHFFFAOYSA-N trimethyl phosphite Chemical compound COP(OC)OC CYTQBVOFDCPGCX-UHFFFAOYSA-N 0.000 claims description 4
- XLYOSJIUNKQMPH-UHFFFAOYSA-N CN(C)C([O-])C.[O-]CC.[O-]CC.[O-]CC.[O-]CC.[Ta+5] Chemical compound CN(C)C([O-])C.[O-]CC.[O-]CC.[O-]CC.[O-]CC.[Ta+5] XLYOSJIUNKQMPH-UHFFFAOYSA-N 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 239000007983 Tris buffer Substances 0.000 claims description 3
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims description 3
- 125000004122 cyclic group Chemical class 0.000 claims description 3
- MTHYQSRWPDMAQO-UHFFFAOYSA-N diethylazanide;tantalum(5+) Chemical compound CCN(CC)[Ta](N(CC)CC)(N(CC)CC)(N(CC)CC)N(CC)CC MTHYQSRWPDMAQO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 229920000412 polyarylene Polymers 0.000 claims description 3
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 3
- HSXKFDGTKKAEHL-UHFFFAOYSA-N tantalum(v) ethoxide Chemical compound [Ta+5].CC[O-].CC[O-].CC[O-].CC[O-].CC[O-] HSXKFDGTKKAEHL-UHFFFAOYSA-N 0.000 claims description 3
- BUZKVHDUZDJKHI-UHFFFAOYSA-N triethyl arsorite Chemical compound CCO[As](OCC)OCC BUZKVHDUZDJKHI-UHFFFAOYSA-N 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000004090 dissolution Methods 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 125000001931 aliphatic group Chemical group 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 30
- 239000000463 material Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- BZHMBWZPUJHVEE-UHFFFAOYSA-N 2,3-dimethylpentane Natural products CC(C)CC(C)C BZHMBWZPUJHVEE-UHFFFAOYSA-N 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 5
- ZFFMLCVRJBZUDZ-UHFFFAOYSA-N 2,3-dimethylbutane Chemical compound CC(C)C(C)C ZFFMLCVRJBZUDZ-UHFFFAOYSA-N 0.000 description 4
- WGECXQBGLLYSFP-UHFFFAOYSA-N 2,3-dimethylpentane Chemical compound CCC(C)C(C)C WGECXQBGLLYSFP-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000012707 chemical precursor Substances 0.000 description 4
- GCSJLQSCSDMKTP-UHFFFAOYSA-N ethenyl(trimethyl)silane Chemical compound C[Si](C)(C)C=C GCSJLQSCSDMKTP-UHFFFAOYSA-N 0.000 description 4
- 231100001261 hazardous Toxicity 0.000 description 4
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 4
- CRSOQBOWXPBRES-UHFFFAOYSA-N neopentane Chemical compound CC(C)(C)C CRSOQBOWXPBRES-UHFFFAOYSA-N 0.000 description 4
- 230000009257 reactivity Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- GXDHCNNESPLIKD-UHFFFAOYSA-N 2-methylhexane Chemical compound CCCCC(C)C GXDHCNNESPLIKD-UHFFFAOYSA-N 0.000 description 3
- AEXMKKGTQYQZCS-UHFFFAOYSA-N 3,3-dimethylpentane Chemical compound CCC(C)(C)CC AEXMKKGTQYQZCS-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- MGRFDZWQSJNJQP-UHFFFAOYSA-N triethyl arsorate Chemical compound CCO[As](=O)(OCC)OCC MGRFDZWQSJNJQP-UHFFFAOYSA-N 0.000 description 3
- FLTJDUOFAQWHDF-UHFFFAOYSA-N 2,2-dimethylhexane Chemical compound CCCCC(C)(C)C FLTJDUOFAQWHDF-UHFFFAOYSA-N 0.000 description 2
- PFEOZHBOMNWTJB-UHFFFAOYSA-N 3 MP Natural products CCC(C)CC PFEOZHBOMNWTJB-UHFFFAOYSA-N 0.000 description 2
- VLJXXKKOSFGPHI-UHFFFAOYSA-N 3-methylhexane Chemical compound CCCC(C)CC VLJXXKKOSFGPHI-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZCTQGTTXIYCGGC-UHFFFAOYSA-N Benzyl salicylate Chemical compound OC1=CC=CC=C1C(=O)OCC1=CC=CC=C1 ZCTQGTTXIYCGGC-UHFFFAOYSA-N 0.000 description 2
- 239000012691 Cu precursor Substances 0.000 description 2
- RGSFGYAAUTVSQA-UHFFFAOYSA-N Cyclopentane Chemical compound C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- QWHNJUXXYKPLQM-UHFFFAOYSA-N dimethyl cyclopentane Natural products CC1(C)CCCC1 QWHNJUXXYKPLQM-UHFFFAOYSA-N 0.000 description 2
- IIEWJVIFRVWJOD-UHFFFAOYSA-N ethylcyclohexane Chemical compound CCC1CCCCC1 IIEWJVIFRVWJOD-UHFFFAOYSA-N 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- NNPPMTNAJDCUHE-UHFFFAOYSA-N isobutane Chemical compound CC(C)C NNPPMTNAJDCUHE-UHFFFAOYSA-N 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- QWTDNUCVQCZILF-UHFFFAOYSA-N isopentane Chemical compound CCC(C)C QWTDNUCVQCZILF-UHFFFAOYSA-N 0.000 description 2
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000012712 low-vapor-pressure precursor Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- OSWPMRLSEDHDFF-UHFFFAOYSA-N methyl salicylate Chemical compound COC(=O)C1=CC=CC=C1O OSWPMRLSEDHDFF-UHFFFAOYSA-N 0.000 description 2
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 2
- JYVLIDXNZAXMDK-UHFFFAOYSA-N pentan-2-ol Chemical compound CCCC(C)O JYVLIDXNZAXMDK-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- MGSRCZKZVOBKFT-UHFFFAOYSA-N thymol Chemical compound CC(C)C1=CC=C(C)C=C1O MGSRCZKZVOBKFT-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- MDZDBKLCYXUTQA-UHFFFAOYSA-N 1,1,1,2,2,3,3,4,4-nonafluoroheptane Chemical compound CCCC(F)(F)C(F)(F)C(F)(F)C(F)(F)F MDZDBKLCYXUTQA-UHFFFAOYSA-N 0.000 description 1
- QEYBZUDMTRNNKL-UHFFFAOYSA-N 1,1,1,2,2,3,3,4-octafluoro-4-methylhexane Chemical compound CCC(C)(F)C(F)(F)C(F)(F)C(F)(F)F QEYBZUDMTRNNKL-UHFFFAOYSA-N 0.000 description 1
- AMTRUQFVBBCVKX-UHFFFAOYSA-N 1,1,1,2,2,3,3,5,5,5-decafluoro-4-methylpentane Chemical compound FC(F)(F)C(C)C(F)(F)C(F)(F)C(F)(F)F AMTRUQFVBBCVKX-UHFFFAOYSA-N 0.000 description 1
- KKICZGSAFCDJNX-UHFFFAOYSA-N 1,1,1,2,2,3,3-heptafluoro-4-methylpentane Chemical compound CC(C)C(F)(F)C(F)(F)C(F)(F)F KKICZGSAFCDJNX-UHFFFAOYSA-N 0.000 description 1
- XMEPUXUKDYDDDY-UHFFFAOYSA-N 1,1,1,2,2,3,3-heptafluorohexane Chemical compound CCCC(F)(F)C(F)(F)C(F)(F)F XMEPUXUKDYDDDY-UHFFFAOYSA-N 0.000 description 1
- RLLBVJFPXKAREG-UHFFFAOYSA-N 1,1,1,2,2,3-hexafluoro-3-(trifluoromethyl)hexane Chemical compound CCCC(F)(C(F)(F)F)C(F)(F)C(F)(F)F RLLBVJFPXKAREG-UHFFFAOYSA-N 0.000 description 1
- LMXFPOKQVSRBOD-UHFFFAOYSA-N 1,1,1,2,2,3-hexafluoro-3-methylpentane Chemical compound CCC(C)(F)C(F)(F)C(F)(F)F LMXFPOKQVSRBOD-UHFFFAOYSA-N 0.000 description 1
- LYLKEPIXPCPARY-UHFFFAOYSA-N 1,1,1,2,2,3-hexafluoro-4-methyl-3-(trifluoromethyl)pentane Chemical compound CC(C)C(F)(C(F)(F)F)C(F)(F)C(F)(F)F LYLKEPIXPCPARY-UHFFFAOYSA-N 0.000 description 1
- HPNFIKMZNRYMGS-UHFFFAOYSA-N 1,1,1,2,2,4,4,4-octafluoro-3-methylbutane Chemical compound FC(F)(F)C(C)C(F)(F)C(F)(F)F HPNFIKMZNRYMGS-UHFFFAOYSA-N 0.000 description 1
- BOUPBKJTBLKGJZ-UHFFFAOYSA-N 1,1,1,2,2,4,4,5,5,5-decafluoro-3-methylpentane Chemical compound FC(F)(F)C(F)(F)C(C)C(F)(F)C(F)(F)F BOUPBKJTBLKGJZ-UHFFFAOYSA-N 0.000 description 1
- RVIPFBQGXFAYRG-UHFFFAOYSA-N 1,1,1,2,2-pentafluoro-3-(trifluoromethyl)pentane Chemical compound CCC(C(F)(F)F)C(F)(F)C(F)(F)F RVIPFBQGXFAYRG-UHFFFAOYSA-N 0.000 description 1
- ICRHLKSFUFAHAK-UHFFFAOYSA-N 1,1,1,2,2-pentafluoro-3-methyl-3-(trifluoromethyl)pentane Chemical compound CCC(C)(C(F)(F)F)C(F)(F)C(F)(F)F ICRHLKSFUFAHAK-UHFFFAOYSA-N 0.000 description 1
- BOHNMUKQWOARTI-UHFFFAOYSA-N 1,1,1,2,2-pentafluoro-3-methylbutane Chemical compound CC(C)C(F)(F)C(F)(F)F BOHNMUKQWOARTI-UHFFFAOYSA-N 0.000 description 1
- NVSXSBBVEDNGPY-UHFFFAOYSA-N 1,1,1,2,2-pentafluorobutane Chemical compound CCC(F)(F)C(F)(F)F NVSXSBBVEDNGPY-UHFFFAOYSA-N 0.000 description 1
- KBOAVUSWPXRQBC-UHFFFAOYSA-N 1,1,1,2,2-pentafluoropentane Chemical compound CCCC(F)(F)C(F)(F)F KBOAVUSWPXRQBC-UHFFFAOYSA-N 0.000 description 1
- WRCLFOLPNWUPGX-UHFFFAOYSA-N 1,1,1,2,3,3-hexafluoro-2-(trifluoromethyl)hexane Chemical compound CCCC(F)(F)C(F)(C(F)(F)F)C(F)(F)F WRCLFOLPNWUPGX-UHFFFAOYSA-N 0.000 description 1
- RGTAYSMHPJOKJA-UHFFFAOYSA-N 1,1,1,2,3,3-hexafluoro-2-(trifluoromethyl)pentane Chemical compound CCC(F)(F)C(F)(C(F)(F)F)C(F)(F)F RGTAYSMHPJOKJA-UHFFFAOYSA-N 0.000 description 1
- KSTLJFGCMMLCSO-UHFFFAOYSA-N 1,1,1,2,3,3-hexafluoro-4-methyl-2-(trifluoromethyl)pentane Chemical compound CC(C)C(F)(F)C(F)(C(F)(F)F)C(F)(F)F KSTLJFGCMMLCSO-UHFFFAOYSA-N 0.000 description 1
- UEGWTOLIHWSERL-UHFFFAOYSA-N 1,1,1,2,3-pentafluoro-3-methyl-2-(trifluoromethyl)pentane Chemical compound CCC(C)(F)C(F)(C(F)(F)F)C(F)(F)F UEGWTOLIHWSERL-UHFFFAOYSA-N 0.000 description 1
- WUPWHEIPIJRQBZ-UHFFFAOYSA-N 1,1,1,2-tetrafluoro-2-(trifluoromethyl)butane Chemical compound CCC(F)(C(F)(F)F)C(F)(F)F WUPWHEIPIJRQBZ-UHFFFAOYSA-N 0.000 description 1
- CWDGCCGUDKORJF-UHFFFAOYSA-N 1,1,1,2-tetrafluoro-2-(trifluoromethyl)pentane Chemical compound CCCC(F)(C(F)(F)F)C(F)(F)F CWDGCCGUDKORJF-UHFFFAOYSA-N 0.000 description 1
- JORAZCXKKOUJCV-UHFFFAOYSA-N 1,1,1,2-tetrafluoro-2-methylbutane Chemical compound CCC(C)(F)C(F)(F)F JORAZCXKKOUJCV-UHFFFAOYSA-N 0.000 description 1
- HGLKKQQGYHLPAI-UHFFFAOYSA-N 1,1,1,2-tetrafluoro-2-methylpropane Chemical compound CC(C)(F)C(F)(F)F HGLKKQQGYHLPAI-UHFFFAOYSA-N 0.000 description 1
- SSLACVMVTRFEPN-UHFFFAOYSA-N 1,1,1,2-tetrafluoro-3-methyl-2-(trifluoromethyl)butane Chemical compound CC(C)C(F)(C(F)(F)F)C(F)(F)F SSLACVMVTRFEPN-UHFFFAOYSA-N 0.000 description 1
- ONNGDXIHDFMCJB-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoro-2,2-dimethylpropane Chemical compound FC(F)(F)C(C)(C)C(F)(F)F ONNGDXIHDFMCJB-UHFFFAOYSA-N 0.000 description 1
- MIMLLEXTFXWJLP-UHFFFAOYSA-N 1,1,1-trifluoro-2-(trifluoromethyl)butane Chemical compound CCC(C(F)(F)F)C(F)(F)F MIMLLEXTFXWJLP-UHFFFAOYSA-N 0.000 description 1
- MPHSIQDQOHBLCD-UHFFFAOYSA-N 1,1,1-trifluoro-2-methyl-2-(trifluoromethyl)butane Chemical compound CCC(C)(C(F)(F)F)C(F)(F)F MPHSIQDQOHBLCD-UHFFFAOYSA-N 0.000 description 1
- UMDYYXGWJOJCSZ-UHFFFAOYSA-N 1,1,1-trifluoro-2-methyl-2-(trifluoromethyl)pentane Chemical compound CCCC(C)(C(F)(F)F)C(F)(F)F UMDYYXGWJOJCSZ-UHFFFAOYSA-N 0.000 description 1
- GQUXQQYWQKRCPL-UHFFFAOYSA-N 1,1,2,2,3,3-hexafluorocyclopropane Chemical compound FC1(F)C(F)(F)C1(F)F GQUXQQYWQKRCPL-UHFFFAOYSA-N 0.000 description 1
- FRCHKSNAZZFGCA-UHFFFAOYSA-N 1,1-dichloro-1-fluoroethane Chemical compound CC(F)(Cl)Cl FRCHKSNAZZFGCA-UHFFFAOYSA-N 0.000 description 1
- JSZOAYXJRCEYSX-UHFFFAOYSA-N 1-nitropropane Chemical compound CCC[N+]([O-])=O JSZOAYXJRCEYSX-UHFFFAOYSA-N 0.000 description 1
- XTDQDBVBDLYELW-UHFFFAOYSA-N 2,2,3-trimethylpentane Chemical compound CCC(C)C(C)(C)C XTDQDBVBDLYELW-UHFFFAOYSA-N 0.000 description 1
- OHMHBGPWCHTMQE-UHFFFAOYSA-N 2,2-dichloro-1,1,1-trifluoroethane Chemical compound FC(F)(F)C(Cl)Cl OHMHBGPWCHTMQE-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 1
- GWOYZTXBFGVAOP-UHFFFAOYSA-N 2-methylbutane;3-methylhexane Chemical compound CCC(C)C.CCCC(C)CC GWOYZTXBFGVAOP-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- NPSRBSXJNVUUBM-UHFFFAOYSA-N 3,3-bis(trifluoromethyl)pentane Chemical compound CCC(CC)(C(F)(F)F)C(F)(F)F NPSRBSXJNVUUBM-UHFFFAOYSA-N 0.000 description 1
- BSBXXKCURZEELW-UHFFFAOYSA-N 3-ethyl-1,1,1,2,2,4,4,5,5,5-decafluoropentane Chemical compound FC(F)(F)C(F)(F)C(CC)C(F)(F)C(F)(F)F BSBXXKCURZEELW-UHFFFAOYSA-N 0.000 description 1
- JIGUICYYOYEXFS-UHFFFAOYSA-N 3-tert-butylbenzene-1,2-diol Chemical compound CC(C)(C)C1=CC=CC(O)=C1O JIGUICYYOYEXFS-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- PMGCQNGBLMMXEW-UHFFFAOYSA-N Isoamyl salicylate Chemical compound CC(C)CCOC(=O)C1=CC=CC=C1O PMGCQNGBLMMXEW-UHFFFAOYSA-N 0.000 description 1
- BJIOGJUNALELMI-ONEGZZNKSA-N Isoeugenol Natural products COC1=CC(\C=C\C)=CC=C1O BJIOGJUNALELMI-ONEGZZNKSA-N 0.000 description 1
- NHTMVDHEPJAVLT-UHFFFAOYSA-N Isooctane Chemical compound CC(C)CC(C)(C)C NHTMVDHEPJAVLT-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004341 Octafluorocyclobutane Substances 0.000 description 1
- CYTYCFOTNPOANT-UHFFFAOYSA-N Perchloroethylene Chemical group ClC(Cl)=C(Cl)Cl CYTYCFOTNPOANT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 1
- 239000005844 Thymol Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical group ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000004202 aminomethyl group Chemical group [H]N([H])C([H])([H])* 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229920006272 aromatic hydrocarbon resin Polymers 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- OCWYEMOEOGEQAN-UHFFFAOYSA-N bumetrizole Chemical compound CC(C)(C)C1=CC(C)=CC(N2N=C3C=C(Cl)C=CC3=N2)=C1O OCWYEMOEOGEQAN-UHFFFAOYSA-N 0.000 description 1
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 1
- ISZNTHJRTDMGSZ-UHFFFAOYSA-N butane;cyclopropane Chemical compound C1CC1.CCCC ISZNTHJRTDMGSZ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000008280 chlorinated hydrocarbons Chemical class 0.000 description 1
- 150000005827 chlorofluoro hydrocarbons Chemical class 0.000 description 1
- KFUSEUYYWQURPO-UPHRSURJSA-N cis-1,2-dichloroethene Chemical group Cl\C=C/Cl KFUSEUYYWQURPO-UPHRSURJSA-N 0.000 description 1
- BJIOGJUNALELMI-ARJAWSKDSA-N cis-isoeugenol Chemical compound COC1=CC(\C=C/C)=CC=C1O BJIOGJUNALELMI-ARJAWSKDSA-N 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 229950010592 dodecafluoropentane Drugs 0.000 description 1
- MCPKSFINULVDNX-UHFFFAOYSA-N drometrizole Chemical compound CC1=CC=C(O)C(N2N=C3C=CC=CC3=N2)=C1 MCPKSFINULVDNX-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- LHGVFZTZFXWLCP-UHFFFAOYSA-N guaiacol Chemical compound COC1=CC=CC=C1O LHGVFZTZFXWLCP-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- DMEGYFMYUHOHGS-UHFFFAOYSA-N heptamethylene Natural products C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 1
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000001282 iso-butane Substances 0.000 description 1
- KDSNLYIMUZNERS-UHFFFAOYSA-N isobutyl amine Natural products CC(C)CN KDSNLYIMUZNERS-UHFFFAOYSA-N 0.000 description 1
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 1
- 229940087305 limonene Drugs 0.000 description 1
- 235000001510 limonene Nutrition 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 1
- 229960001047 methyl salicylate Drugs 0.000 description 1
- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000002828 nitro derivatives Chemical class 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- HUOPKZGUMQMTIO-UHFFFAOYSA-N nonane;octane Chemical compound CCCCCCCC.CCCCCCCCC HUOPKZGUMQMTIO-UHFFFAOYSA-N 0.000 description 1
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 1
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 1
- QYSGYZVSCZSLHT-UHFFFAOYSA-N octafluoropropane Chemical compound FC(F)(F)C(F)(F)C(F)(F)F QYSGYZVSCZSLHT-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- KAVGMUDTWQVPDF-UHFFFAOYSA-N perflubutane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)F KAVGMUDTWQVPDF-UHFFFAOYSA-N 0.000 description 1
- 229950003332 perflubutane Drugs 0.000 description 1
- NJCBUSHGCBERSK-UHFFFAOYSA-N perfluoropentane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F NJCBUSHGCBERSK-UHFFFAOYSA-N 0.000 description 1
- 229960004065 perflutren Drugs 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 229940090181 propyl acetate Drugs 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000012453 solvate Substances 0.000 description 1
- 239000002594 sorbent Substances 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229950011008 tetrachloroethylene Drugs 0.000 description 1
- 229960000790 thymol Drugs 0.000 description 1
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- BJIOGJUNALELMI-UHFFFAOYSA-N trans-isoeugenol Natural products COC1=CC(C=CC)=CC=C1O BJIOGJUNALELMI-UHFFFAOYSA-N 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/02—Cleaning pipes or tubes or systems of pipes or tubes
- B08B9/027—Cleaning the internal surfaces; Removal of blockages
- B08B9/032—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/02—Cleaning pipes or tubes or systems of pipes or tubes
- B08B9/027—Cleaning the internal surfaces; Removal of blockages
- B08B9/032—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing
- B08B9/0321—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing using pressurised, pulsating or purging fluid
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5018—Halogenated solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5027—Hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/40—Specific cleaning or washing processes
- C11D2111/44—Multi-step processes
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/24—Hydrocarbons
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Detergent Compositions (AREA)
- Chemical Vapour Deposition (AREA)
- Cleaning In General (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、エレクトロニクス
産業、および高純度化学薬品送り出しを必要とする他の
用途におけるプロセス化学薬品送り出し(proces
s chemical delivery)の分野に関
する。さらに詳しくは、本発明は特にそのようなプロセ
ス化学薬品送り出しラインにおいてプロセス化学薬品も
しくはプロセス化学薬品容器の切り換え(change
out)の間に、プロセス化学薬品送り出しライン、容
器および関連装置を清浄化(cleaning)するた
めの溶媒混合物(solvent blends)およ
び方法に関する。The present invention relates to process chemical delivery in the electronics industry and other applications requiring high purity chemical delivery.
s chemical delivery). More particularly, the present invention particularly relates to the switching of process chemicals or process chemical containers in such process chemical delivery lines.
(out), solvent blends and methods for cleaning process chemical delivery lines, vessels and associated equipment.
【0002】[0002]
【従来の技術】プロセス化学薬品ラインの排気(eva
cuation)およびガスのパージが、送り出しライ
ンから残留化学薬品を除去するのに用いられてきた。真
空に引くことおよびガスパージの両方とも高揮発性化学
薬品を急速に除去するのにはうまくいくが、低揮発性化
学薬品には有効ではない。非常に毒性の物質を引抜くと
きに、安全性が問題である。2. Description of the Related Art Exhaust of process chemical lines (eva)
Cation and gas purging have been used to remove residual chemicals from the delivery line. Both vacuuming and gas purging work well for rapidly removing high volatility chemicals, but are not effective for low volatility chemicals. Safety is an issue when extracting highly toxic materials.
【0003】残留化学薬品を除去するために溶媒の使用
は新しくない。種々の特許は、溶媒を用いる系を清浄化
しようと努めており、ここでは引用により丸ごと組入れ
られる:米国特許5,045,117号明細書は溶媒お
よび真空作用を用いてプリント配線(printed
wiring)アセンブリーを清浄化するための方法お
よび装置を記述する。[0003] The use of solvents to remove residual chemicals is not new. Various patents seek to clean solvent-based systems, and are hereby incorporated by reference in their entirety: US Pat. No. 5,045,117 discloses printed wiring using solvents and vacuum action.
A method and apparatus for cleaning an assembly is described.
【0004】米国特許第5,115,576号明細書は
イソプロピルアルコール溶媒を用いる半導体ウェハの清
浄化装置および方法を開示する。US Pat. No. 5,115,576 discloses an apparatus and method for cleaning a semiconductor wafer using an isopropyl alcohol solvent.
【0005】溶媒による清浄化に関するさらなる特許
は;米国特許第5,744,436;5,605,64
7;5,494,601;5,560,861;4,5
78,209;5,135,676;5,607,91
2;5,762,817;5,352,375;5,8
27,454;5,275,669;5,750,48
8;5,444,102;6,042,749;5,5
31,916;5,118,359;5,298,08
3;5,304,322;5,562,861;5,6
85,915;5,695,688;5,716,54
9;EP710715;特開昭48−16595;特開
昭55−34996;特開昭56−20298、を含
む。[0005] Further patents relating to solvent cleaning include: US Patent Nos. 5,744,436; 5,605,64.
7; 5,494,601; 5,560,861; 4,5
78,209; 5,135,676; 5,607,91
2, 5,762,817; 5,352,375; 5,8
27,454; 5,275,669; 5,750,48
8; 5,444,102; 6,042,749; 5,5
31,916; 5,118,359; 5,298,08
3, 5,304,322; 5,562,861; 5,6
85,915; 5,695,688; 5,716,54
9; EP710715; JP-A-48-16595; JP-A-55-34996; JP-A-56-20298.
【0006】[0006]
【発明が解決しようとする課題】本発明は、プロセスラ
インもしくは配管を清浄化する従来技術の難点を、溶媒
混合物、特にペルフルオロヘキサン/ヘプタン混合物の
新規な使用により、克服しようとするものである。この
場合、高純度前駆体は送り出しラインにあり、除去を必
要とする。ある場合には、前駆体の揮発性は低すぎて典
型的な真空パージ法を用いて除され得ない。本発明のパ
ラメータ、および従来技術の難点を克服するために本発
明から生まれる利点が、以下にもっと詳細に説明され
る。SUMMARY OF THE INVENTION The present invention seeks to overcome the disadvantages of the prior art for cleaning process lines or pipes by the novel use of solvent mixtures, especially perfluorohexane / heptane mixtures. In this case, the high purity precursor is on the delivery line and needs to be removed. In some cases, the volatility of the precursor is too low to be removed using typical vacuum purge methods. The parameters of the present invention, and the advantages derived from the present invention to overcome the difficulties of the prior art, are described in more detail below.
【0007】[0007]
【課題を解決するための手段】本発明は、高純度原料化
学薬品容器から使用箇所に高純度原料化学薬品を送り出
す多岐管を、該多岐管による該高純度原料化学薬品の送
り出しが中断された後に、清浄化する方法であり;真空
源に接続することにより多岐管を排気すること、該排気
を終結すること、該高純度原料化学薬品のための少くと
も1つの溶媒を、該少くとも1つの溶媒の少くとも1つ
の源から該多岐管に導入すること、該多岐管内の残留高
純度原料化学薬品を少くとも1つの溶媒に溶解するこ
と、得られる残留高純度原料化学薬品および溶媒の混合
物を該多岐管から排出すること、を含む。好ましくは、
溶媒を排出後に不活性ガス源に接続して該多岐管内をパ
ージし、ついでパージを終結することにより処理が進め
られる。SUMMARY OF THE INVENTION The present invention provides a manifold for delivering high-purity raw chemicals from a high-purity raw chemical container to a point of use, wherein the delivery of the high-purity raw chemicals by the manifold is interrupted. Evacuating the manifold by connecting it to a vacuum source, terminating the evacuation, removing at least one solvent for the high-purity raw chemical from the at least one solvent. Introducing the manifold from at least one source of two solvents into the manifold, dissolving the remaining high purity raw chemicals in the manifold in at least one solvent, the resulting mixture of residual high purity raw chemicals and solvents From the manifold. Preferably,
After draining the solvent, the process proceeds by purging the manifold by connecting to an inert gas source and then terminating the purge.
【0008】あるいは、本発明は前もっての排気および
パージもしくは与圧を避け得、溶媒パージの前に多岐管
から残留化学薬品を単に排液しうる。この場合、本発明
は、高純度原料化学薬品容器から使用箇所に高純度原料
化学薬品を送り出す多岐管を、該多岐管による該高純度
原料化学薬品の送り出しが中断された後に、清浄化する
方法であり;ベントに接続することにより多岐管を排水
すること、該高純度原料化学薬品のための少くとも1つ
の溶媒を、該少くとも1つの溶媒の少くとも1つの源か
ら該多岐管に導入すること、該多岐管内の残留高純度原
料化学薬品を少くとも1つの溶媒に溶解すること、そし
て得られる残留高純度原料化学薬品および溶媒の混合物
を該多岐管から排出すること、を含む。Alternatively, the present invention may avoid prior evacuation and purging or pressurization and may simply drain residual chemicals from the manifold prior to solvent purging. In this case, the present invention provides a method of cleaning a manifold for delivering a high-purity raw chemical from a high-purity raw chemical container to a point of use, after the delivery of the high-purity raw chemical is interrupted by the manifold. Draining the manifold by connecting to a vent, introducing at least one solvent for the high purity source chemical into the manifold from at least one source of the at least one solvent. Doing so, dissolving the residual high purity raw chemical in the manifold in at least one solvent, and discharging the resulting mixture of residual high purity raw chemical and solvent from the manifold.
【0009】好ましくは少くとも1つの溶媒は炭化フッ
素(fluorocarbon)含有溶媒および炭化水
素溶媒の混合物である。もっと好ましくは、その少くと
も1つの溶媒は溶媒混合物であり、1つの溶媒は高純度
原料化学薬品を非可燃性にする。任意にはその少くとも
1つの溶媒は溶媒混合物であり、1つの溶媒は高純度原
料化学薬品を危険でないようにする。Preferably, the at least one solvent is a mixture of a fluorocarbon-containing solvent and a hydrocarbon solvent. More preferably, the at least one solvent is a mixture of solvents and one solvent renders the high purity raw chemical non-flammable. Optionally, the at least one solvent is a mixture of solvents and one solvent renders the high-purity source chemical non-hazardous.
【0010】その高純度原料化学薬品は、タンタルペン
タエトキシド(TAETO)、テトラキス(ジエチルア
ミノ)チタン(TDEAT)、テトラキス(ジメチルア
ミノ)チタン(TDMAT)、テトラメチルシクロテト
ラシロキサン(TMCTS)、銅ヘキサフルオロアセチ
ルアセトネート−トリメチルビニルシラン(Cu(hf
ac)TMVS)、テトラエチルオルソシリケート(T
EOS)、トリメチルボレート(TMB)、トリエチル
ボレート(TEB)、トリメチルホスファイト(TMP
i)、トリエチルホスフェート(TEPO)、ビスター
シャリーブチルアミノシラン(BTBAS)、タンタル
テトラエトキシドジメチルアミノエトキシド(TAT−
DMAE)、t−ブチルイミドトリスジエチルアミドタ
ンタル(TBTDET)、トリエチルアーセナイト(T
EOA)、ポリアリーレンエーテルおよびそれらの混合
物からなる群より選ばれる。The high-purity raw chemicals include tantalum pentaethoxide (TAETO), tetrakis (diethylamino) titanium (TDEAT), tetrakis (dimethylamino) titanium (TDMAT), tetramethylcyclotetrasiloxane (TMCTS), copper hexafluoro Acetylacetonate-trimethylvinylsilane (Cu (hf
ac) TMVS), tetraethyl orthosilicate (T
EOS), trimethyl borate (TMB), triethyl borate (TEB), trimethyl phosphite (TMP
i), triethyl phosphate (TEPO), Vista-tert-butylaminosilane (BTBAS), tantalum tetraethoxide dimethylaminoethoxide (TAT-
DMAE), t-butylimido tris diethylamide tantalum (TBTDET), triethylarsenite (T
EOA), polyarylene ethers and mixtures thereof.
【0011】その少くとも1つの溶媒は、メタノール、
エタノール、プロパノールおよびブタノールのような有
機アルコール類、アセトン、テトラヒドロフラン、ジメ
チルシロキサン、水、ヘキサン、ヘプタン、オクタン、
デカンおよびドデカンのような脂肪族炭化水素類、芳香
族炭化水素類、ケトン類、アルデヒド類、エーテル類、
エステル類、グライム、ハロゲン含有アルコール類、ア
ルキルニトリル類、有機アミノ類、フッ素化化合物、ペ
ルフルオロヘキサンおよびペルフルオロヘプタンのよう
なペルフルオロカーボン、ならびにそれらの混合物から
なる群より選ばれる。The at least one solvent is methanol,
Organic alcohols such as ethanol, propanol and butanol, acetone, tetrahydrofuran, dimethylsiloxane, water, hexane, heptane, octane,
Aliphatic hydrocarbons such as decane and dodecane, aromatic hydrocarbons, ketones, aldehydes, ethers,
It is selected from the group consisting of esters, glymes, halogen-containing alcohols, alkyl nitriles, organic aminos, fluorinated compounds, perfluorocarbons such as perfluorohexane and perfluoroheptane, and mixtures thereof.
【0012】[0012]
【発明の実施の形態】本発明は、溶媒パージ法に使用さ
れうる高純度で環境に低影響の溶媒集団を用いる方法を
含み、そこでは高純度プロセス配管の内側表面は化学蒸
着(CVD)および他の半導体製造プロセスのための超
高純度で、低蒸気圧の前駆体の残留物を含む。DETAILED DESCRIPTION OF THE INVENTION The present invention includes a method of using a high purity, environmentally friendly solvent population that can be used in a solvent purging process, wherein the inner surface of the high purity process piping is formed by chemical vapor deposition (CVD) and Contains ultra-high purity, low vapor pressure precursor residues for other semiconductor manufacturing processes.
【0013】本発明は米国特許5,964,230号の
装置に使用され得、その内容は引用によりここに明確に
組入れられる。The present invention may be used with the device of US Pat. No. 5,964,230, the contents of which are expressly incorporated herein by reference.
【0014】半導体産業における困難さは、超低蒸気圧
前駆体化学薬品が標準的な真空サイクルパージの使用に
よっては高純度プロセス配管系の内側から除去され得な
いことである。この不完全な除去の結果は、作業者に対
する安全性の危険、すなわち粒状物の生成および混入、
または激しい反応さえもたらし得る前駆体の空気および
水との反応性、を伴う。これらの物質に対して最大に溶
解する溶媒は炭化水素および/またはクロロフルオロカ
ーボン(CFCs)であるのが通常であり、それらは可
燃性、毒性、腐食性もしくは反応性であり、または有害
な環境的作用を有する。エタノールのような場合、輸送
に際して付加的な制約が国内および国際的な規則の結果
として、存在する。加えて、これらの前駆体物質は空気
および/または水分に敏感であるのが通常であるので、
できるかぎりプロセス配管の内壁から100%近く除去
することが要求される。A difficulty in the semiconductor industry is that very low vapor pressure precursor chemicals cannot be removed from inside high purity process tubing by using standard vacuum cycle purge. The consequence of this incomplete removal is a safety hazard to the workers, namely the formation and contamination of particulate matter,
Or the reactivity of the precursor with air and water, which can lead to even a violent reaction. Solvents that dissolve maximally for these materials are usually hydrocarbons and / or chlorofluorocarbons (CFCs), which are flammable, toxic, corrosive or reactive, or have hazardous environmental hazards. Has an action. In the case of ethanol, there are additional restrictions on transportation as a result of national and international regulations. In addition, since these precursor materials are usually sensitive to air and / or moisture,
It is required to remove almost 100% from the inner wall of the process pipe as much as possible.
【0015】本発明のために、危険なプロセス化学薬品
もしくは原料化学薬品前駆体は、米国環境保護局のよう
な政府機関の確立された基準を充す化学薬品であり、た
とえばBarclays California Code of Regulation, Titl
e22, Section 66261.30-66261.33に例示される。For the purposes of the present invention, hazardous process chemicals or raw chemical precursors are chemicals that meet established standards of government agencies, such as the United States Environmental Protection Agency, and include, for example, the Barclays California Code of Regulation. , Titl
e22, Section 66261.30-66261.33.
【0016】数多くの清浄化溶媒が、プリント回路ボー
トから自動車のトランスミッションフルイドのような種
々の、数多くの品目からの残留物の清浄化を含む用途に
用いられるためにこの数年間、明らかにされてきた。こ
れらの場合において、清浄化される物質は廃棄副生物で
あり、超高純度のまま残るにちがいないプロセス化学薬
品送り出しラインの内側の超高純度前駆体ではない。A number of cleaning solvents have been identified over the past several years for use in applications involving the cleaning of residues from a variety of numerous items, such as printed circuit boats to automotive transmission fluids. Was. In these cases, the material to be cleaned is a waste by-product, not an ultra-high purity precursor inside the process chemical delivery line that must remain ultra-high purity.
【0017】多くの化合物が試みられているのに、発明
者は現在の文献で、このプロセスおよび適切な溶媒もし
くは溶媒混合物の組合わせをいまだに見付けなければな
らない。本発明は混合された溶媒、ならびに半導体産業
および健康および地域の規制により要求される、安全
性、プロセスおよび環境的問題を充たす純溶媒、の使用
に関する。好適には、混合物はキャリア溶媒として、そ
してある場合には主たる溶媒として、さらには適切な溶
解性、蒸気圧および引火点を有する炭化水素溶媒として
も、ペルフルオロカーボンを含む。純粋な物質は、すべ
ての種類の非可燃性もしくは可燃性のアルコール類、エ
ーテル類、アセトン、および他の極性および非極性溶
媒、ならびにそれらの混合物を含み、互いにおよび不活
性なキャリア溶媒と一緒でもよい。さらに、液体CO2
のような超臨界流体が使用され得、考慮される。Although many compounds have been tried, the inventor still has to find this process and the combination of suitable solvents or solvent mixtures in the current literature. The present invention relates to the use of mixed solvents and pure solvents that meet the safety, process and environmental concerns required by the semiconductor industry and health and local regulations. Preferably, the mixture comprises the perfluorocarbon as a carrier solvent and in some cases as a primary solvent, and also as a hydrocarbon solvent having suitable solubility, vapor pressure and flash point. Pure substances include all types of non-flammable or flammable alcohols, ethers, acetone, and other polar and non-polar solvents, and mixtures thereof, even with each other and with inert carrier solvents. Good. In addition, liquid CO 2
Supercritical fluids such as can be used and are contemplated.
【0018】米国特許5,964,230号明細書の溶
媒パージ装置を用いる好適な態様において、大部分のプ
ロセス化学薬品前駆体は、パージ操作を要求する送り出
しライン領域から不活性ガス(ヘリウム、窒素、アルゴ
ンもしくは他の適切な不活性ガス)でパージされ、配管
壁に固着する残留プロセス化学薬品前駆体のみが残る。In a preferred embodiment using the solvent purging apparatus of US Pat. No. 5,964,230, most of the process chemical precursors are supplied with an inert gas (helium, nitrogen) from a delivery line area requiring a purge operation. , Argon or other suitable inert gas), leaving only residual process chemical precursors sticking to the piping walls.
【0019】真空がパージされるべき溶媒パージ装置の
内側領域に加えられる。A vacuum is applied to the inner area of the solvent purging device to be purged.
【0020】大部分のキャリアペルフルオロヘキサンも
しくは類似物質、およびヘキサンもしくはヘプタンのよ
うな炭化水素溶媒、もしくは単一物質の、非混合物質か
らなる溶媒が、圧力下でパージ領域に注入される。安全
性および環境問題の基準を充たし、前駆体を容易に溶解
させる純粋な溶媒物質はこの用途のための受入れられる
代替溶媒であることに留意されたい。Most of the carrier perfluorohexane or similar and a hydrocarbon solvent such as hexane or heptane, or a single substance, non-mixed solvent, are injected under pressure into the purge zone. It should be noted that pure solvent materials that meet safety and environmental concerns and that readily dissolve the precursors are acceptable alternative solvents for this application.
【0021】ついで汚染された溶媒は、任意に炭素もし
くは他の吸収剤媒体を含んでいてもよい捕集容器に導入
されるか、または廃棄系(abatement sys
tem)に導かれる。吸収剤媒体の選定は前駆体および
溶媒混合物の可燃性、反応性、毒性および腐食性に直接
に関連し、試験により決定されなければならない。The contaminated solvent is then introduced into a collection vessel, which may optionally contain carbon or other absorbent media, or a waste system.
tem). The choice of sorbent medium is directly related to the flammability, reactivity, toxicity and corrosivity of the precursor and solvent mixture and must be determined by testing.
【0022】配管内側の溶媒洗浄(solvent w
ashing)は、前駆体のすべての形跡が除去される
までくり返される。この溶媒洗浄はさらに以下に説明さ
れる。Solvent cleaning inside the pipe (solvent w
ashing is repeated until all evidence of the precursor is removed. This solvent wash is described further below.
【0023】プロセス化学薬品もしくは高純度原料化学
薬品は次のものを含むが、それらに限定されない:タン
タルペンタエトキシド(TAETO)、テトラキス(ジ
エチルアミノ)チタン(TDEAT)、テトラキス(ジ
メチルアミノ)チタン(TDMAT)、銅ヘキサフルオ
ロアセチルアセトネート−トリメチルビニルシラン(C
u(hfac)TMVS)および類似のCVD銅前駆
体、テトラエチルオルソシリケート(TEOS)および
テトラメチルシクロテトラシロキサン(TMCTS)の
ような他の化学蒸着(CVD)ケイ素前駆体、トリメチ
ルボレート(TMB)、トリエチルボレート(TE
B)、トリメチルホスファイト(TMPi)、およびト
リエチルホスフェート(TEPO)のようなホウ素およ
びリンを含むCVD前駆体、ビスターシャリーブチルア
ミノシラン(BTBAS)、タンタルテトラエトキシド
ジメチルアミノエトキシド(TAT−DMAE)、t−
ブチルイミドトリスジエチルアミドタンタル(TBTD
ET)、トリエチルアーセネート(TEASAT)およ
びトリエチルアーセナイト(TEOA)のような類似の
ヒ素前駆体、ペンシルバニア州 Allentownの
Air Products and Chemical
s,Inc.より入手しうる「VELOX」ポリアリー
レンエーテル類、ニュージャージー州 Morrisv
illeのHoneywellより入手しうる「FLA
RE」フッ素化アリーレンエーテル類、ミシガン州 M
idlandのDow Chemicalより入手しう
る「SILK」芳香族炭化水素樹脂および他の関連化合
物のような、低Kスピン物質であり、そこではプロセス
化学薬品の迅速、安全な除去が適切な溶媒でプロセス配
管の洗浄から恩恵を受ける。Process or high purity raw chemicals include, but are not limited to, tantalum pentaethoxide (TAETO), tetrakis (diethylamino) titanium (TDEAT), tetrakis (dimethylamino) titanium (TDDMAT) ), Copper hexafluoroacetylacetonate-trimethylvinylsilane (C
u (hfac) TMVS) and similar CVD copper precursors, other chemical vapor deposited (CVD) silicon precursors such as tetraethylorthosilicate (TEOS) and tetramethylcyclotetrasiloxane (TMCTS), trimethylborate (TMB), triethyl Borate (TE
B) CVD precursors containing boron and phosphorus, such as trimethyl phosphite (TMPI), and triethyl phosphate (TEPO), Vista-tert-butylaminosilane (BTBAS), tantalum tetraethoxide dimethylaminoethoxide (TAT-DMAE), t-
Butyl imido tris diethyl amide tantalum (TBTD
ET), similar arsenic precursors such as triethylarsenate (TEASAT) and triethylarsenite (TEOA), Air Products and Chemical of Allentown, PA
s, Inc. VELOX polyarylene ethers available from Morrisv, NJ
"FLA" available from Honeywell of Ille
RE "Fluorinated arylene ethers, Michigan
low-K spin materials, such as "SILK" aromatic hydrocarbon resins and other related compounds available from Dow Chemical of Idland, where rapid and safe removal of process chemicals is carried out in a suitable solvent with a suitable solvent. Benefit from cleaning.
【0024】幅広い観点で、本発明で考慮される溶媒
は、メタノール、エタノール、プロパノールおよびブタ
ノールのような有機アルコール類、アセトン、テトラヒ
ドロフラン、ジメチルシロキサン、水、ヘキサン、ヘプ
タン、オクタン、デカンおよびドデカンのような脂肪族
炭化水素類、芳香族炭化水素類、ケトン類、アルデヒド
類、エーテル類、エステル類、グライム、ハロゲン含有
アルコール類、アルキルニトリル類、有機アミノ類、フ
ッ素化化合物、ペルフルオロヘキサンおよびペルフルオ
ロヘプタンのようなペルフルオロカーボン、ならびにそ
れらの混合物を含む。From a broad point of view, solvents considered in the present invention include organic alcohols such as methanol, ethanol, propanol and butanol, acetone, tetrahydrofuran, dimethylsiloxane, water, hexane, heptane, octane, decane and dodecane. Aliphatic hydrocarbons, aromatic hydrocarbons, ketones, aldehydes, ethers, esters, glymes, halogen-containing alcohols, alkyl nitriles, organic aminos, fluorinated compounds, perfluorohexane and perfluoroheptane Such perfluorocarbons, as well as mixtures thereof.
【0025】炭化水素は、石油および農業原料に由来す
るような、望ましい、主な溶媒であり;アルコール類;
グリコール類;グリコールエーテル類;エステル類;ア
ルデヒド類;ケトン類;エーテル類;ハロゲン化炭化水
素;窒素化合物;イオウ化合物;シリコーン化合物;ノ
ルマルヘキサン;2−および3−メチルヘキサン;2,
3−および3,3−ジメチルペンタン;2,4−および
2,2−ジメチルヘキサン;ジメチルシクロペンタン;
メチルシクロヘキサン;およびエチルペンタンが挙げら
れる。さらに他の炭化水素として、たとえばn−ペンタ
ン;2−メチルブタン;2,2−ジメチルプロパン;n
−ヘキサン;3−メチルペンタン;2,2−ジメチルブ
タン;2,3−ジメチルブタン;n−ヘプタン;2−メ
チルヘキサン;3−メチルヘキサン;2,3−ジメチル
ペンタン;2,4−ジメチルペンタン;n−オクタン;
2,2,3−トリメチルペンタン;2,2,4−トリメ
チルペンタン;シクロペンタン;シクロヘキサン;メチ
ルシクロヘキサン;およびエチルシクロヘキサンが挙げ
られる。ジクロロメタン、シス−1,2−ジクロロエチ
レンのような塩素化炭化水素も考慮されうる。Hydrocarbons are desirable and major solvents, such as those derived from petroleum and agricultural raw materials; alcohols;
Glycols; Glycol ethers; Esters; Aldehydes; Ketones; Ethers; Halogenated hydrocarbons; Nitrogen compounds; Sulfur compounds; Silicone compounds; Normal hexane;
3- and 3,3-dimethylpentane; 2,4- and 2,2-dimethylhexane; dimethylcyclopentane;
Methylcyclohexane; and ethylpentane. Still other hydrocarbons include, for example, n-pentane; 2-methylbutane; 2,2-dimethylpropane; n
2,3-dimethylbutane; 2,3-dimethylbutane; n-heptane; 2-methylhexane; 3-methylhexane; 2,3-dimethylpentane; 2,4-dimethylpentane; n-octane;
2,2,3-trimethylpentane; 2,2,4-trimethylpentane; cyclopentane; cyclohexane; methylcyclohexane; and ethylcyclohexane. Chlorinated hydrocarbons such as dichloromethane, cis-1,2-dichloroethylene may also be considered.
【0026】芳香族、カルボシル、ハロゲン化、窒素お
よび酸素含有溶媒も考慮され、たとえばトランス−1,
2−ジクロロエチレン;トリクロロエチレン;テトラク
ロロエチレン;アセトン;メチルエチルケトン;メチル
ブチルケトン;およびメチルイソブチルケトンのような
ケトン類;ジエチルエーテル;メチルセロソルブ;テト
ラヒドロフラン;および1,4−ジオキサンのようなエ
ーテル類;2,2−ジクロロ−1,1,1−トリフルオ
ロエタン;および1,1−ジクロロ−1−フルオロエタ
ンのようなクロロフルオロハイドロカーボン;酢酸メチ
ル;酢酸エチル;酢酸プロピル;および酢酸ブチルのよ
うなエステル類;ニトロメタン;ニトロエタン;ニトロ
プロパン;およびニトロベンゼンのようなニトロ化合
物;ジエチルアミン;トリエチルアミン;i−プロピル
アミン;n−ブチルアミン;およびi−ブチルアミンの
ようなアミン類;フェノール;o−クレゾール;m−ク
レゾール;p−クレゾール;チモール;p−t−ブチル
フェノール;t−ブチルカテコール;カテコール;イソ
オイゲノール;o−メトキシフェノール;ビスフェノー
ルA;サリチル酸イソアミル;サリチル酸ベンジル;サ
リチル酸メチル;および2,6−ジ−t−ブチル−p−
クレゾールのようなフェノール類;2−(2′−ヒドロ
キシ−5′−メチル−フェニル)ベンゾトリアゾール;
2−(2′−ヒドロキシ−3′−t−ブチル−5′−メ
チルフェニル)−5−クロロベンゾトリアゾール;1,
2,3−ベンゾトリアゾールおよび1−[(N,N−ビ
ス−2−エチルヘキシル)アミノメチル]ベンゾトリア
ゾールのようなトリアゾール類;1−ブタノール;2−
ブタノール;エタノール;2−メチル−1−プロパノー
ル;2−メチル−2−プロパノール;1−ペンタノー
ル;2−ペンタノール;1−プロパノール;および2−
プロパノールからなる群より選ばれるアルコール類;エ
ステル類;ブタン;シクロプロパン;デカン;2,3−
ジメチルペンタン;2,4−ジメチルペンタン;2,2
−ジメチルプロパン;ヘプタン;イソブタン;リモネ
ン;2−メチルブタン;3−メチルヘキサン;3−メチ
ルペンタン;ノナン;オクタン;ペンタン;ピネン;プ
ロパン;松やにおよびウンデカンからなる群より選ばれ
る炭化水素、が挙げられる。Aromatic, carbosyl, halogenated, nitrogen and oxygen containing solvents are also contemplated, eg, trans-1,
2-Chloroethylene; Trichloroethylene; Tetrachloroethylene; Acetone; Methyl ethyl ketone; Ketones such as methyl butyl ketone; and methyl isobutyl ketone; Diethyl ether; Methyl cellosolve; Tetrahydrofuran; Chlorofluorohydrocarbons such as dichloro-1,1,1-trifluoroethane; and 1,1-dichloro-1-fluoroethane; methyl acetate; ethyl acetate; esters such as propyl acetate; and butyl acetate; Nitro compounds such as nitropropane; and nitrobenzene; diethylamine; triethylamine; i-propylamine; n-butylamine; and amines such as i-butylamine; M-cresol; p-cresol; thymol; pt-butylphenol; t-butylcatechol; catechol; isoeugenol; o-methoxyphenol; bisphenol A; isoamyl salicylate; benzyl salicylate; methyl salicylate; 2,6-di-t-butyl-p-
Phenols such as cresol; 2- (2'-hydroxy-5'-methyl-phenyl) benzotriazole;
2- (2'-hydroxy-3'-tert-butyl-5'-methylphenyl) -5-chlorobenzotriazole;
Triazoles such as 2,3-benzotriazole and 1-[(N, N-bis-2-ethylhexyl) aminomethyl] benzotriazole; 1-butanol; 2-
Butanol; ethanol; 2-methyl-1-propanol; 2-methyl-2-propanol; 1-pentanol; 2-pentanol; 1-propanol;
Alcohols selected from the group consisting of propanols; esters; butane; cyclopropane; decane;
Dimethylpentane; 2,4-dimethylpentane; 2,2
-Dimethylpropane; heptane; isobutane; limonene; 2-methylbutane; 3-methylhexane; 3-methylpentane; nonane; octane; pentane; pinene; propane; a hydrocarbon selected from the group consisting of pine and undecane.
【0027】可燃性もしくは危険な条件を減少させるた
めに混合するのに特に有用な化合物は、次のようなペル
フロオロカーボンを含む。たとえば、デカフルオロブタ
ン;ドデカフルオロペンタン;ヘキサフルオロシクロプ
ロパン;ヘキサフルオロエタン;オクタフルオロシクロ
ブタン;オクタフルオロプロパン;テトラデカフルオロ
ヘキサン;テトラフルオロメタン;1,1,1,2,2
−ペンタフルオロブタン;1,1,1,2,2−ペンタ
フルオロペンタン;2−メチル−3,3,4,4,4−
ペンタフルオロブタン;2−トリフルオロメチル−1,
1,1,2−テトラフルオロブタン;1,1,1,2,
2,3,3−ヘプタフルオロペンタン;1,1,1,
2,2,3,3−ヘプタフルオロヘキサン;2−トリフ
ルオロメチル−1,1,1,2−テトラフルオロペンタ
ン;4−メチル−1,1,1,2,2,3,3−ヘプタ
フルオロペンタン;3−メチル−2−トリフルオロメチ
ル−1,1,1,2−テトラフルオロブタン;1,1,
1,2,2,3,3,4,4−ノナフルオロヘキサン;
2−トリフルオロメチル−1,1,1,2,3,3−ヘ
キサフルオロペンタン;2,2−(ビス)トリフルオロ
メチル−1,1,1−トリフルオロブタン;1,1,
1,2,2,3−ヘキサフルオロ−3−トリフルオロメ
チルペンタン;1,1,1,2,2,3,3,4,4−
ノナフルオロヘプタン;5−メチル−1,1,1,2,
2,3,3,4,4−ノナフルオロヘキサン;2−トリ
フルオロメチル−1,1,1,2,3,3−ヘキサフル
オロヘキサン;4−メチル−2−トリフルオロメチル−
1,1,1,2,3,3−ヘキサフルオロペンタン;
2,2−トリフロオロメチル−1,1,1−トリフルオ
ロペンタン;3−メチル−2,2−トリフルオロメチル
−1,1,1−トリフルオロブタン;1,1,1,2,
2,3−ヘキサフルオロ−3−トリフルオロメチルヘキ
サン;1,1,1,2,2,3−ヘキサフルオロ−3−
トリフルオロメチル−4−メチルペンタン;2−トリフ
ルオロメチル−2−フルオルプロパン;2−メチル−
1,1,1,2−テトラフルオロブタン;3−メチル−
1,1,1,2,2,3−ヘキサフルオロペンタン;4
−メチル−1,1,1,2,2,3,3,4−オクタフ
ルオロへキサン;3−メチル−2−トリフルオロメチル
−1,1,1,2,3−ペンタフルオロペンタン;2−
メチル−1,1,1,3,3,4,4,4−オクタフル
オロブタン;3−メチル−1,1,1,2,2,4,
4,5,5,5−デカフルオロペンタン;2−メチル−
1,1,1,3,3,4,4,5,5,5−デカフルオ
ロペンタン;3−トリフルオロメチル−1,1,1,
2,2−ペンタフルオロペンタン;3−ペンタフルオロ
エチル−1,1,1,2,2−ペンタフルオロペンタ
ン;4−トリフルオロメチル−1,1,1,2,2,
3,3−ヘプタフルオロヘキサン;2−メチル−2−ト
リフルオロメチル−1,1,1−トリフルオロプロパ
ン;2−メチル−2−トリフルオロメチル−3,3,
4,4,4−ペンタフルオロブタン;2−メチル−2−
トリフルオロメチル−1,1,1−トリフルオロブタ
ン;3,3−ジメチル−1,1,1,2,2,4,4,
5,5,5−デカフルオロペンタン;3−メチル−3−
トリフルオロメチル−1,1,1,2,2−ペンタフル
オロペンタン;3,3−ビス(トリフルオロメチル)ペ
ンタン;2,2−ジメチル−1,1,1,3,3,4,
4,5,5,5−デカフルオロペンタン;2−メチル−
2−トリフルオロメチル−1,1,1−トリフルオロペ
ンタン、が挙げられる。Particularly useful compounds for mixing to reduce flammable or hazardous conditions include perfluorocarbons such as: For example, decafluorobutane; dodecafluoropentane; hexafluorocyclopropane; hexafluoroethane; octafluorocyclobutane; octafluoropropane; tetradecafluorohexane; tetrafluoromethane; 1,1,1,2,2
-Pentafluorobutane; 1,1,1,2,2-pentafluoropentane; 2-methyl-3,3,4,4,4-
Pentafluorobutane; 2-trifluoromethyl-1,
1,1,2-tetrafluorobutane; 1,1,1,2,2
2,3,3-heptafluoropentane; 1,1,1,
2,2,3,3-heptafluorohexane; 2-trifluoromethyl-1,1,1,2-tetrafluoropentane; 4-methyl-1,1,1,2,2,3,3-heptafluoro Pentane; 3-methyl-2-trifluoromethyl-1,1,1,2-tetrafluorobutane;
1,2,2,3,3,4,4-nonafluorohexane;
2-trifluoromethyl-1,1,1,2,3,3-hexafluoropentane; 2,2- (bis) trifluoromethyl-1,1,1-trifluorobutane; 1,1,
1,1,2,3-hexafluoro-3-trifluoromethylpentane; 1,1,1,2,2,3,3,4,4-
Nonafluoroheptane; 5-methyl-1,1,1,2,2
2,3,3,4,4-nonafluorohexane; 2-trifluoromethyl-1,1,1,2,3,3-hexafluorohexane; 4-methyl-2-trifluoromethyl-
1,1,1,2,3,3-hexafluoropentane;
2,2-trifluoromethyl-1,1,1-trifluoropentane; 3-methyl-2,2-trifluoromethyl-1,1,1-trifluorobutane; 1,1,1,2,
2,3-hexafluoro-3-trifluoromethylhexane; 1,1,1,2,2,3-hexafluoro-3-
Trifluoromethyl-4-methylpentane; 2-trifluoromethyl-2-fluoropropane; 2-methyl-
1,1,1,2-tetrafluorobutane; 3-methyl-
1,1,1,2,2,3-hexafluoropentane; 4
-Methyl-1,1,1,2,2,3,3,4-octafluorohexane; 3-methyl-2-trifluoromethyl-1,1,1,2,3-pentafluoropentane; 2-
Methyl-1,1,1,3,3,4,4,4-octafluorobutane; 3-methyl-1,1,1,2,2,4,
4,5,5,5-decafluoropentane; 2-methyl-
1,1,1,3,3,4,4,5,5,5-decafluoropentane; 3-trifluoromethyl-1,1,1,
2,2-pentafluoropentane; 3-pentafluoroethyl-1,1,1,2,2-pentafluoropentane; 4-trifluoromethyl-1,1,1,2,2,2
3,3-heptafluorohexane; 2-methyl-2-trifluoromethyl-1,1,1-trifluoropropane; 2-methyl-2-trifluoromethyl-3,3
4,4,4-pentafluorobutane; 2-methyl-2-
Trifluoromethyl-1,1,1-trifluorobutane; 3,3-dimethyl-1,1,1,2,2,4,4
5,5,5-decafluoropentane; 3-methyl-3-
Trifluoromethyl-1,1,1,2,2-pentafluoropentane; 3,3-bis (trifluoromethyl) pentane; 2,2-dimethyl-1,1,1,3,3,4
4,5,5,5-decafluoropentane; 2-methyl-
2-trifluoromethyl-1,1,1-trifluoropentane.
【0028】さらに、反応性であるが、溶解性の副生物
を与えるプロセス化学薬品も本発明に受け入れられるこ
と、そして、本発明における溶媒という用語は本発明の
目的のために「溶媒」の広い定義で考慮される。反応性
「溶媒」のこのカテゴリーに入るのは、酸、塩基および
反応性溶媒である。具体的な例は;TDEATとともに
エタノールの使用であり、そこではチタンエトキシドが
生成されるが、エタノールに可溶であり、完全な除去が
確保される。硝酸溶液の使用は銅酸化副生物を除去する
のに使用され、一方、HF溶液が酸化チタンもしくは酸
化タンタルのような酸化副生物物質を除去するのに使用
されうる。このような反応性の原料化学薬品「溶媒」は
数多くの原料化学薬品酸もしくは塩として広く考慮さ
れ、高純度原料化学薬品のための溶媒として一緒に作用
し、または高純度原料化学薬品と反応して高溶解性副生
物を創り出し得る。この群は、HF,HNO3 ,HC
l,H 2 SO4 ,NaOH,KOH、および種々の他の
酸化および/または還元剤、ならびに前駆体物質を反応
もしくは除去するのに適した有機酸もしくはアルカリ、
を含みうる。In addition, reactive but soluble by-products
Process chemicals that provide
And the term solvent in the present invention is used in the present invention.
For the purposes considered a broad definition of "solvent". Reactivity
Included in this category of "solvents" are acids, bases and
Reactive solvent. Specific examples: with TDEAT
Is the use of ethanol, where titanium ethoxide
Is produced, but soluble in ethanol,
Secured. Use of nitric acid solution removes copper oxidation by-products
While the HF solution is titanium oxide or acid
Used to remove oxidation by-products such as tantalum fluoride
Can be done. These reactive raw chemicals "solvents"
Widely considered as many raw chemical acids or salts
Work together as a solvent for high-purity raw chemicals
Or reacts with high-purity raw chemicals to produce highly soluble by-products.
Can create things. This group consists of HF, HNOThree , HC
l, H Two SOFour , NaOH, KOH, and various other
Reacts oxidizing and / or reducing agents and precursor substances
Or an organic acid or alkali suitable for removal,
May be included.
【0029】さらに、溶媒は、多岐管内で一緒に混合さ
れると高純度化学薬品を不活性もしくは少くとも非可燃
性にしうる。種々のフッ素化もしくは過フッ素化(pe
rfluorinated)有機もしくは炭化水素液体
がこのような種類の溶媒に含まれると考えられる。ペル
フロオロカーボン、たとえば、ペルフルオロヘキサン、
ペルフルオロヘプタンおよびそれらの混合物はこのよう
な溶媒の例である。さらに、真空ポンプオイルおよび/
または類似の低揮発性炭化水素もしくは炭化フッ素オイ
ルのような不活性化合物も使用されうる。Furthermore, the solvents, when mixed together in the manifold, can render the high purity chemical inert or at least non-flammable. Various fluorinated or perfluorinated (pe
It is contemplated that rfluorinated organic or hydrocarbon liquids are included in these types of solvents. Perfluorocarbons, such as perfluorohexane,
Perfluoroheptane and mixtures thereof are examples of such solvents. In addition, vacuum pump oil and / or
Or similar inert compounds such as low volatile hydrocarbon or fluorocarbon oils may be used.
【0030】ペルフルオロヘキサンは1つのバルクキャ
リア溶媒として意図される。これは水および溶解酸素を
最小限に保持すべきである。ペルフルオロカーボンから
の水および酸素の除去は周知である。数多くのペルフル
オロカーボン化合物が、一般的基準:非可燃性もしくは
容易に非可燃性にされる;主溶媒と混和しうる;前駆体
と反応しない;循環により容易に回収される;環境的な
脅威を与えない、を充すかぎり、これに関連して代わり
として使用されうる。[0030] Perfluorohexane is intended as one bulk carrier solvent. This should keep water and dissolved oxygen to a minimum. The removal of water and oxygen from perfluorocarbons is well known. Numerous perfluorocarbon compounds are of general criteria: non-flammable or easily made non-flammable; miscible with main solvents; does not react with precursors; is easily recovered by circulation; It can be used instead in this context as long as it does not provide.
【0031】主たる溶媒は、問題となる前駆体を吸収も
しくは溶媒和する能力、供給される真空能力よりも大き
くなければならない揮発性、および実用的な程度に高く
なければならない引火点、の直接的な機能として選ばれ
なければならない。これらの条件は前駆体により変動し
得、プロセス作業をなすには数多くの主たる溶媒が必要
である。たとえば、TDMATおよびTDEATは主な
溶媒としてヘキサンもしくはヘプタンを使用する。Cu
(hfac)tmvsのような銅CVDは主な溶媒とし
てトリメチルビニルシラン(TMVS)を使用する。溶
媒物質は種々の前駆体を除去するために選ばれ得、前駆
体はTAETOおよびTBTDETのようなタンタル前
駆体;TDEATおよびTDMATのようなチタン前駆
体;Cu(hfac)tmvsを含む銅前駆体、および
オレフィン基が溶媒として使用されうる他の銅含有前駆
体;事実上通常固体であり、種々の溶媒を前駆体キャリ
アとして使用するバリウム/ストロンチウム/チタン
(BST)前駆体、その前駆体の例はBa(thd)x
,Sr(thd)x およびTi(thd)xを含む;
を含むが、これらに限定されない。TEASATおよび
TEOAのようなヒ素をもつ化合物もこれらの方法を用
いて高純度プロセス配管の内側からパージされうる。ゲ
ルマニウム、ハフニウム、ニオブ、ストロンチウムおよ
び他の関連する液体前駆体も、使用する正確な化合物に
もとづいて、適切な溶媒和剤によりこの方法を用いて除
去されうる。The primary solvent is the direct ability to absorb or solvate the precursor in question, the volatility which must be greater than the vacuum capacity supplied, and the flash point which must be as high as practical. Function must be selected. These conditions can vary from precursor to precursor and require a number of major solvents to perform the process operation. For example, TDMAT and TDEAT use hexane or heptane as the primary solvent. Cu
Copper CVD such as (hfac) tmvs uses trimethylvinylsilane (TMVS) as the main solvent. Solvent materials can be selected to remove various precursors, the precursors being tantalum precursors such as TAETO and TBTDET; titanium precursors such as TDEAT and TDAT; copper precursors including Cu (hfac) tmvs; And other copper-containing precursors in which the olefinic group can be used as a solvent; barium / strontium / titanium (BST) precursors, which are generally normally solid and use various solvents as precursor carriers, examples of such precursors are: Ba (thd) x
, Sr (thd) x and Ti (thd) x ;
Including, but not limited to. Arsenic bearing compounds such as TEASAT and TEOA can also be purged from inside high purity process piping using these methods. Germanium, hafnium, niobium, strontium and other related liquid precursors can also be removed using this method with a suitable solvating agent, based on the exact compound used.
【0032】主な溶媒は前駆体分子の成分部分の1つで
あることが多い。なお他の前駆体は主な溶媒として、エ
タノール、イソプロパノールもしくはメタノールのよう
なアルコールを使用しうる。すべての場合において、主
な問題は前駆体の溶解性、キャリア溶媒の前駆体との溶
媒の非反応性である。TDMATとともに使用される主
な溶媒は、たとえばヘキサンおよびヘプタンである。The main solvent is often one of the constituent parts of the precursor molecule. Still other precursors may use alcohols such as ethanol, isopropanol or methanol as the main solvent. In all cases, the main problem is the solubility of the precursor, the non-reactivity of the solvent with the precursor of the carrier solvent. The main solvents used with TDMAT are, for example, hexane and heptane.
【0033】溶媒の操作限界は、溶媒混合物の沸点およ
び引火点、ならびに前駆体の粘度および相にもとづく。
80℃もの高い温度は約0℃の低温と同様に受入れられ
得、溶媒および前駆体に依存する。パージガスもしくは
溶媒の送り出し圧力範囲は、好ましくは約34.5〜約
483KPa(5〜70psig)であるが、与圧され
ない不活性ガス送り出しも考慮される。したがって、本
発明のためにパージは、大気圧未満、大気圧もしくは超
大気圧の不活性ガス添加を含むと考えられ、不活性ガス
を導入するために多岐管内の真空を用いるか、もしくは
昇圧不活性ガス源を用いる。与圧は上昇された圧力の不
活性ガスの使用を含むと考えられ、そこでは圧力は少な
くとも排気条件から上昇し、好ましくは超大気圧とな
る。要求される真空は完全な除去を確保するために2つ
の溶媒の蒸気圧よりも低くなければならない。The operating limits of the solvent are based on the boiling point and flash point of the solvent mixture, as well as on the viscosity and phase of the precursor.
Temperatures as high as 80 ° C. can be accepted as low as about 0 ° C., depending on the solvent and precursor. The purge gas or solvent delivery pressure range is preferably about 34.5 to about 483 KPa (5 to 70 psig), but non-pressurized inert gas delivery is also contemplated. Thus, for the purposes of the present invention, purging is considered to include the addition of an inert gas at sub-atmospheric, atmospheric or super-atmospheric pressure, using a vacuum in the manifold to introduce the inert gas, or a pressurized inert gas. Use a gas source. Pressurization is considered to involve the use of an elevated pressure of an inert gas, where the pressure is increased, at least from evacuation conditions, and preferably to superatmospheric pressure. The required vacuum must be lower than the vapor pressure of the two solvents to ensure complete removal.
【0034】混合物の範囲は好ましくは第2もしくはフ
ッ素含有溶媒における主な溶媒の1〜20wt%であ
り、混合物の選択は可燃性についての混合物の潜在能
力、溶媒における前駆体の溶解性、および装置によるサ
イクル数にもとづく。好適な態様において、主な溶媒で
あるヘプタンの選択された量は10wt%、残りはペル
フルオロヘキサンである。The range of the mixture is preferably from 1 to 20% by weight of the main solvent in the second or fluorine-containing solvent, and the choice of the mixture depends on the potential of the mixture for flammability, the solubility of the precursor in the solvent, and the equipment. Based on the number of cycles. In a preferred embodiment, the selected amount of heptane, the main solvent, is 10 wt%, the balance being perfluorohexane.
【0035】不活性与圧ガスでの従来の排気およびパー
ジとともに溶媒清浄化法の使用において、原料化学薬品
前駆体の約65〜95%の除去が最初のパスで実現され
る。残りのほとんどすべては第2サイクル後に除去さ
れ、残留物として多少の少量のみを残す。第3の溶媒パ
ージ段階後には、前駆体は丸ごと除去されている。ある
場合には追加のパージはプロセスの完全さを確認するた
めに使用され、または結局比較的低温度の溶媒が使用さ
れる。In using a solvent cleaning process with conventional evacuation and purging with an inert pressurized gas, removal of about 65-95% of the raw chemical precursor is achieved in a first pass. Almost all of the rest is removed after the second cycle, leaving only a small amount of residue. After the third solvent purge step, the precursor has been completely removed. In some cases, an additional purge is used to confirm the integrity of the process, or eventually a relatively cooler solvent is used.
【0036】本発明は、高純度原料化学薬品容器から使
用個所に高純度原料化学薬品を送り出す多岐管を、該多
岐管による該高純度原料化学薬品の送り出しが中断され
た後に、清浄化する方法であり;真空源に接続すること
により多岐管を排気すること、該排気を終結すること、
該高純度原料化学薬品のための少なくとも1つの溶媒
を、該少なくとも1つの溶媒の少なくとも1つの源から
該多岐管に導入すること、該多岐管内の残留高純度原料
化学薬品を少なくとも1つの溶媒に溶解すること、得ら
れる残留高純度原料化学薬品および溶媒の混合物を該多
岐管から排出すること、を含む。好ましくは溶媒を排出
した後に:好ましくは昇圧不活性ガス源に接続して好ま
しくは与圧して該多岐管内をパージし、ついでパージも
しくは好ましくは与圧を終結することによりプロセスは
進行する。The present invention provides a method of purifying a manifold for delivering a high-purity raw chemical from a high-purity raw chemical container to a point of use after the delivery of the high-purity raw chemical by the manifold is interrupted. Evacuating the manifold by connecting to a vacuum source, terminating the evacuation,
Introducing at least one solvent for the high purity source chemical from the at least one source of the at least one solvent to the manifold, converting residual high purity source chemical in the manifold to the at least one solvent. Dissolving and discharging the resulting mixture of residual high purity raw chemical and solvent from the manifold. Preferably after the solvent has been drained: the process proceeds, preferably by connecting to a pressurized inert gas source to purge the manifold, preferably by pressurization, and then to end the purge or preferably pressurization.
【0037】好ましくは、排気、導入、溶解、排出およ
びパージもしくは好ましくは与圧が一連の周期的なくり
返しで実施され、そこではプロセスの段階が清浄化を確
保するために反復数により連続してくりかえされる。本
発明者は行なった実験において、プロセスの段階は3度
くりかえされるべきであることを見出した。好適には、
一連の周期的なくり返しは、多岐管もしくは配管にプロ
セス化学薬品もしくは高純度原料前駆体を導入する前
に、多岐管を排気およびパージもしくは、好ましくは与
圧することに続く。たいていの場合、多岐管を排気およ
びパージもしくは好ましくは与圧することが多岐管の排
気で終結するのが望ましい。排気レベルは溶媒混合物の
蒸気圧より低くすべきである。Preferably, evacuation, introduction, dissolution, evacuation and purging or, preferably, pressurization is carried out in a series of cyclic repetitions, wherein the steps of the process are repeated in succession by a number of iterations to ensure cleaning. It is repeated. In experiments conducted by the present inventors, it has been found that the steps of the process should be repeated three times. Preferably,
A series of cyclic repetitions follows evacuating and purging or, preferably, pressurizing the manifold prior to introducing process chemicals or high purity raw material precursors to the manifold or piping. In most cases, it is desirable to evacuate and purge or preferably pressurize the manifold with termination of the manifold exhaust. The evacuation level should be lower than the vapor pressure of the solvent mixture.
【0038】あるいは、本発明は先の排気を避けること
ができ、そして溶媒のパージの前に多岐管から残留化学
薬品を単に排水することができる。その場合、本発明は
高純度原料化学薬品容器から使用個所に高純度原料化学
薬品を送り出す多岐管を、該多岐管による該高純度原料
化学薬品の送り出しが中断された後に、清浄化する方法
であり;ベントに接続することにより多岐管を排水する
こと、該高純度原料化学薬品のための少なくとも1つの
溶媒を、該少なくとも1つの溶媒の少なくとも1つの源
から該多岐管に導入すること、該多岐管内の残留高純度
原料化学薬品を少なくとも1つの溶媒に溶解すること、
そして得られる残留高純度原料化学薬品および溶媒の混
合物を該多岐管から排出すること、を含む。好適な態様
において、溶媒混合物はヘプタン約1〜20wt%、残
りはペルフルオロへキサンの割合であり、もっと好まし
くは溶媒混合物はヘプタン約10wt%、残りはペルフ
ルオロへキサン、の割合である。Alternatively, the present invention can avoid prior venting and simply drain residual chemicals from the manifold prior to solvent purging. In this case, the present invention provides a method of cleaning a manifold for delivering a high-purity raw chemical from a high-purity raw chemical container to a point of use, after the delivery of the high-purity raw chemical is interrupted by the manifold. Yes; draining the manifold by connecting to a vent; introducing at least one solvent for the high purity raw chemical from the at least one source of the at least one solvent into the manifold; Dissolving the residual high purity raw chemical in the manifold in at least one solvent;
And discharging the resulting mixture of residual high purity raw chemical and solvent from the manifold. In a preferred embodiment, the solvent mixture is about 1-20 wt% heptane, with the balance being perfluorohexane, more preferably the solvent mixture is about 10 wt% heptane, with the balance being perfluorohexane.
【0039】本発明はエレクトロニクス製造産業におけ
るような、送り出し系において高純度化学薬品の使用に
著しい利点を提供する。高純度の原料化学薬品の維持は
原料化学薬品の純度のみならず化学薬品が分配される送
り出し系をも要求する。従来、産業は送り出し系の清浄
さを維持するために不活性与圧ガスで真空およびパージ
の多数サイクルを使用していた。しかし、低揮発性化学
薬品ではこのような周期的な清浄化は十分ではない:こ
のような低揮発性化学薬品のための溶媒が望ましい。本
発明はこのような溶媒およびその処分を、エレクトロニ
クス産業の作業者が、原料化学薬品を用いる従来の方法
に悪く影響させないで提供する。これは、低揮発性化学
薬品のようなとても困難な原料化学薬品のために超清浄
さを与えるための本質的に継ぎ目のないシステムを提供
し、そしてプロセスラインを通る原料化学薬品の純度の
保持、およびそのような原料化学薬品容器の切換え、な
らびに同一の送り出し系で異なる原料化学薬品の連続使
用、の長年の問題を克服する。The present invention provides significant advantages for the use of high purity chemicals in delivery systems, such as in the electronics manufacturing industry. Maintaining high purity raw chemicals requires not only the purity of the raw chemicals but also the delivery system in which the chemicals are distributed. In the past, the industry has used multiple cycles of vacuum and purge with an inert pressurized gas to maintain the cleanliness of the delivery system. However, with low volatility chemicals such periodic cleaning is not sufficient: solvents for such low volatility chemicals are desirable. The present invention provides such solvents and their disposal without a negative effect on conventional methods of using raw chemicals by workers in the electronics industry. This provides an essentially seamless system for providing ultra-cleanliness for very difficult raw chemicals such as low volatile chemicals, and preserving the purity of the raw chemicals through the process line And the switching of such source chemical containers and the continuous use of different source chemicals in the same delivery system.
【0040】本発明はいくつかの好適な態様に関して説
明されたが、本発明の全範囲は特許請求の範囲から確認
されるべきである。Although the present invention has been described in terms of several preferred embodiments, the full scope of the invention should be ascertained from the claims that follow.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 ロバート サム ツォーリッヒ アメリカ合衆国,カリフォルニア 92009, カールスバッド,パセオ デル ビスタ 6735 (72)発明者 シンチャン レイ アメリカ合衆国,カリフォルニア 92083, ビスタ,シャドーリッジ ドライブ 1580 ナンバー291 (72)発明者 デビット ジェームス シルバ アメリカ合衆国,カリフォルニア 92131, サン ディエゴ,ネグリー アベニュ 11081 (72)発明者 シンシア リー トレント アメリカ合衆国,カリフォルニア 92056, オーシャンサイド,カメオ ストリート 3432 ナンバー57 Fターム(参考) 3B116 AA13 AB53 3B201 AA13 BB92 BB95 BB99 5F043 EE40 5F045 AC07 BB14 EC07 ────────────────────────────────────────────────── ─── Continued on the front page (72) Robert Sam Zorich, Inventor United States, California 92009, Carlsbad, Paseo del Vista 6735 (72) Inventor Singchan Ray United States, California 92083, Vista, Shadow Ridge Drive 1580 Number 291 (72) Inventor David James Silva United States, California 92131, San Diego, Negrie Avenue 11081 (72) Inventor Cynthia Lee Trent United States of America, California 92056, Oceanside, Cameo Street 3432 Number 57 F-term (reference) 3B116 AA13 AB53 3B201 AA13 BB92 BB95 BB99 5F043 EE40 5F045 AC07 BB14 EC07
Claims (16)
高純度原料化学薬品を送り出す多岐管を、該多岐管によ
る該高純度原料化学薬品の送り出しが中断された後に、
清浄化する方法であり;真空源に接続することにより多
岐管を排気すること、該排気を終結すること、該高純度
原料化学薬品のための少くとも1つの溶媒を、該少くと
も1つの溶媒の少くとも1つの源から該多岐管に導入す
ること、該多岐管内の残留高純度原料化学薬品を少くと
も1つの溶媒に溶解すること、得られる残留高純度原料
化学薬品および溶媒の混合物を該多岐管から排出するこ
と、不活性ガス源に接続して該多岐管内をパージするこ
と、を含む清浄化方法。Claims: 1. A manifold for delivering a high-purity raw chemical from a high-purity raw chemical container to a point of use, after the delivery of the high-purity raw chemical by the manifold is interrupted,
Evacuating the manifold by connecting to a vacuum source, terminating the evacuation, removing at least one solvent for the high-purity raw chemical from the at least one solvent. Introducing into the manifold from at least one source; dissolving the remaining high purity source chemical in the manifold in at least one solvent; and mixing the resulting mixture of high purity source chemical and solvent with the solvent. A method of cleaning comprising exhausting from the manifold and purging the manifold by connecting to an inert gas source.
が一連の周期的なくり返しで実施される請求項1記載の
方法。2. The method of claim 1, wherein said evacuation, introduction, dissolution, evacuation, and purging are performed in a series of periodic cycles.
を排気およびパージすることに続く請求項2記載の方
法。3. The method of claim 2 wherein said series of cyclic repetitions follows evacuating and purging said manifold.
が該多岐管の排気で終結する請求項3記載の方法。4. The method of claim 3, wherein said evacuating and purging said manifold terminates in exhausting said manifold.
る請求項1記載の方法。5. The method of claim 1, wherein said at least one solvent is a fluorocarbon.
ロカーボンである請求項5記載の方法。6. The method according to claim 5, wherein said fluorocarbon is a perfluoroperhydrocarbon.
溶媒および炭化水素溶媒の混合物である請求項1記載の
方法。7. The method of claim 1, wherein said at least one solvent is a mixture of a fluorine-containing solvent and a hydrocarbon solvent.
タエトキシド(TAETO)、テトラキス(ジエチルア
ミノ)チタン(TDEAT)、テトラキス(ジメチルア
ミノ)チタン(TDMAT)、テトラメチルシクロテト
ラシロキサン(TMCTS)、銅ヘキサフルオロアセチ
ルアセトネート−トリメチルビニルシラン(Cu(hf
ac)TMVS)、テトラエチルオルソシリケート(T
EOS)、トリメチルボレート(TMB)、トリエチル
ボレート(TEB)、トリメチルホスファイト(TMP
i)、トリエチルホスフェート(TEPO)、ビスター
シャリーブチルアミノシラン(BTBAS)、タンタル
テトラエトキシドジメチルアミノエトキシド(TAT−
DMAE)、t−ブチルイミドトリスジエチルアミドタ
ンタル(TBTDET)、トリエチルアーセナイト(T
EOA)、ポリアリーレンエーテルおよびそれらの混合
物からなる群より選ばれる請求項1記載の方法。8. The high-purity raw material chemicals include tantalum pentaethoxide (TAETO), tetrakis (diethylamino) titanium (TDEAT), tetrakis (dimethylamino) titanium (TDMAT), tetramethylcyclotetrasiloxane (TMCTS), copper Hexafluoroacetylacetonate-trimethylvinylsilane (Cu (hf
ac) TMVS), tetraethyl orthosilicate (T
EOS), trimethyl borate (TMB), triethyl borate (TEB), trimethyl phosphite (TMP
i), triethyl phosphate (TEPO), Vista-tert-butylaminosilane (BTBAS), tantalum tetraethoxide dimethylaminoethoxide (TAT-
DMAE), t-butylimido tris diethylamide tantalum (TBTDET), triethylarsenite (T
2. The method according to claim 1, wherein the method is selected from the group consisting of EOA), polyarylene ethers and mixtures thereof.
タノール、プロパノールおよびブタノールのような有機
アルコール類、アセトン、テトラヒドロフラン、ジメチ
ルシロキサン、水、ヘキサン、ヘプタン、オクタン、デ
カンおよびドデカンのような脂肪族炭化水素類、芳香族
炭化水素類、ケトン類、アルデヒド類、エーテル類、エ
ステル類、グライム、ハロゲン含有アルコール類、アル
キルニトリル類、有機アミノ類、フッ素化化合物、ペル
フルオロヘキサンおよびペルフルオロヘプタンのような
ペルフルオロカーボン、ならびにそれらの混合物からな
る群より選ばれる請求項1記載の方法。9. At least one solvent is an organic alcohol such as methanol, ethanol, propanol and butanol, acetone, tetrahydrofuran, dimethylsiloxane, water, an aliphatic carbon such as hexane, heptane, octane, decane and dodecane. Hydrogens, aromatic hydrocarbons, ketones, aldehydes, ethers, esters, glymes, halogen-containing alcohols, alkyl nitriles, organic aminos, fluorinated compounds, perfluorocarbons such as perfluorohexane and perfluoroheptane And a mixture thereof.
に高純度原料化学薬品を送り出す多岐管を、該多岐管に
よる該高純度原料化学薬品の送り出しが中断された後
に、清浄化する方法であり;真空源に接続することによ
り多岐管を排気すること、該排気を終結すること、該高
純度原料化学薬品を溶解するためのペルフルオロヘキサ
ンおよびヘプタンの溶媒混合物を、該溶媒混合物源から
該多岐管に導入すること、該多岐管内の残留高純度原料
化学薬品を該溶媒混合物に溶解すること、得られる残留
高純度原料化学薬品および溶媒の混合物を該多岐管から
排出すること、ならびに不活性ガス源に接続して該多岐
管内をパージすること、を含む清浄化方法。10. A method for purifying a manifold for delivering a high-purity raw material chemical from a high-purity raw material chemical container to a point of use after the delivery of the high-purity raw material chemical by the manifold is interrupted. Evacuating the manifold by connecting to a vacuum source, terminating the evacuation, removing a solvent mixture of perfluorohexane and heptane from the solvent mixture source to dissolve the high purity source chemical. Dissolving the residual high purity raw chemical in the manifold in the solvent mixture, discharging the resulting mixture of high purity raw chemical and solvent from the manifold, and an inert gas source. Purging the manifold by connecting to a purifier.
プタン、残りがペルフルオロヘキサン、の割合である請
求項10記載の方法。11. The method according to claim 10, wherein said solvent mixture is in the proportion of about 1 to 20% by weight of heptane, the balance being perfluorohexane.
ン、残りがペルフルオロヘキサン、の割合である請求項
10記載の方法。12. The method of claim 10 wherein said solvent mixture is about 10 wt% heptane, the balance being perfluorohexane.
に高純度原料化学薬品を送り出す多岐管を、該多岐管に
よる該高純度原料化学薬品の送り出しが中断された後
に、清浄化する方法であり;ベントに接続することによ
り多岐管を排水すること、該高純度原料化学薬品のため
の少くとも1つの溶媒を、該少くとも1つの溶媒の少く
とも1つの源から該多岐管に導入すること、該多岐管内
の残留高純度原料化学薬品を少くとも1つの溶媒に溶解
すること、そして得られる残留高純度原料化学薬品およ
び溶媒の混合物を該多岐管から排出すること、を含む清
浄化方法。13. A method for purifying a manifold for delivering a high-purity raw chemical from a high-purity raw chemical container to a point of use after the supply of the high-purity raw chemical by the manifold is interrupted. Draining the manifold by connecting to a vent, introducing at least one solvent for the high purity raw chemical from at least one source of the at least one solvent into the manifold; A method of cleaning comprising dissolving the residual high purity raw chemical in the manifold in at least one solvent and discharging the resulting mixture of high purity raw chemical and solvent from the manifold.
ある請求項13記載の方法。14. The method of claim 13, wherein said at least one solvent is a fluorocarbon.
ドロカーボンである請求項13記載の方法。15. The method according to claim 13, wherein said fluorocarbon is a perfluoroperhydrocarbon.
有溶媒および炭化水素溶媒の混合物である請求項13記
載の方法。16. The method of claim 13, wherein said at least one solvent is a mixture of a fluorine-containing solvent and a hydrocarbon solvent.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US67643700A | 2000-09-29 | 2000-09-29 | |
US09/676437 | 2000-09-29 |
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Publication Number | Publication Date |
---|---|
JP2002219432A true JP2002219432A (en) | 2002-08-06 |
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ID=24714510
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EP (1) | EP1193309B1 (en) |
JP (1) | JP2002219432A (en) |
KR (1) | KR100408736B1 (en) |
AT (1) | ATE281510T1 (en) |
DE (1) | DE60106838T2 (en) |
TW (1) | TW486392B (en) |
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US7112485B2 (en) | 2002-08-28 | 2006-09-26 | Micron Technology, Inc. | Systems and methods for forming zirconium and/or hafnium-containing layers |
US6958300B2 (en) * | 2002-08-28 | 2005-10-25 | Micron Technology, Inc. | Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides |
US7041609B2 (en) | 2002-08-28 | 2006-05-09 | Micron Technology, Inc. | Systems and methods for forming metal oxides using alcohols |
TWI258768B (en) | 2004-03-10 | 2006-07-21 | Samsung Electronics Co Ltd | Sense amplifier and method for generating variable reference level |
US8129577B2 (en) | 2008-09-16 | 2012-03-06 | Air Products And Chemicals, Inc. | Process and system for providing acetylene |
CN108140572B (en) * | 2015-09-30 | 2022-12-30 | 芝浦机械电子株式会社 | Substrate processing apparatus and substrate processing method |
Family Cites Families (3)
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US5401429A (en) * | 1993-04-01 | 1995-03-28 | Minnesota Mining And Manufacturing Company | Azeotropic compositions containing perfluorinated cycloaminoether |
US5827454A (en) * | 1994-05-19 | 1998-10-27 | Ag Technology Co., Ltd. | Mixed solvent composition |
US5964230A (en) * | 1997-10-06 | 1999-10-12 | Air Products And Chemicals, Inc. | Solvent purge mechanism |
-
2001
- 2001-09-24 TW TW090123509A patent/TW486392B/en not_active IP Right Cessation
- 2001-09-28 KR KR10-2001-0060572A patent/KR100408736B1/en not_active IP Right Cessation
- 2001-09-28 EP EP01122661A patent/EP1193309B1/en not_active Expired - Lifetime
- 2001-09-28 JP JP2001300498A patent/JP2002219432A/en active Pending
- 2001-09-28 DE DE60106838T patent/DE60106838T2/en not_active Expired - Fee Related
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104971918A (en) * | 2014-04-09 | 2015-10-14 | 瓦克化学股份公司 | Cleaning Industrial Plant Components To Remove Metal Halides |
JP2015213900A (en) * | 2014-04-09 | 2015-12-03 | ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG | Washing method for industrial plant equipment |
US9994802B2 (en) | 2014-04-09 | 2018-06-12 | Wacker Chemie Ag | Cleaning industrial plant components to remove metal halides |
Also Published As
Publication number | Publication date |
---|---|
DE60106838T2 (en) | 2005-04-14 |
EP1193309A1 (en) | 2002-04-03 |
ATE281510T1 (en) | 2004-11-15 |
KR100408736B1 (en) | 2003-12-11 |
EP1193309B1 (en) | 2004-11-03 |
DE60106838D1 (en) | 2004-12-09 |
KR20020025820A (en) | 2002-04-04 |
TW486392B (en) | 2002-05-11 |
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