JP2002299387A - Tape carrier for semiconductor device and method of manufacturing the same - Google Patents
Tape carrier for semiconductor device and method of manufacturing the sameInfo
- Publication number
- JP2002299387A JP2002299387A JP2001096761A JP2001096761A JP2002299387A JP 2002299387 A JP2002299387 A JP 2002299387A JP 2001096761 A JP2001096761 A JP 2001096761A JP 2001096761 A JP2001096761 A JP 2001096761A JP 2002299387 A JP2002299387 A JP 2002299387A
- Authority
- JP
- Japan
- Prior art keywords
- tape
- copper foil
- adhesive
- polyimide resin
- resin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 111
- 239000011889 copper foil Substances 0.000 claims abstract description 102
- 229920001721 polyimide Polymers 0.000 claims abstract description 69
- 239000000853 adhesive Substances 0.000 claims abstract description 67
- 230000001070 adhesive effect Effects 0.000 claims abstract description 67
- 239000009719 polyimide resin Substances 0.000 claims abstract description 56
- 239000010410 layer Substances 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 36
- 229910000679 solder Inorganic materials 0.000 claims abstract description 34
- 239000012790 adhesive layer Substances 0.000 claims abstract description 25
- 238000001259 photo etching Methods 0.000 claims abstract description 6
- 239000002356 single layer Substances 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 8
- 239000011888 foil Substances 0.000 description 19
- 239000002184 metal Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000004642 Polyimide Substances 0.000 description 12
- 238000010030 laminating Methods 0.000 description 11
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- 239000004593 Epoxy Substances 0.000 description 6
- 238000001721 transfer moulding Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000013508 migration Methods 0.000 description 4
- 238000005065 mining Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 101000921780 Solanum tuberosum Cysteine synthase Proteins 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000003351 stiffener Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Wire Bonding (AREA)
Abstract
(57)【要約】
【課題】ＴＡＢテープキャリアの銅箔とテープ基材の熱
膨張係数の違いと接着剤の粘弾性の影響に起因する反り
を減少させることを可能にする。
【解決手段】ポリイミド樹脂フィルムから成るテープ基
材２０の一方の片面に銅箔２を貼り合わせてフォトエッ
チングにより配線パターン５を形成し、その配線パター
ン５上をソルダレジスト１６の膜で保護したＴＡＢテー
プキャリアにおいて、前記テープ基材２０の他方の片面
に、熱膨張係数が前記銅箔２に近い接着剤層３９又は接
着剤付ポリイミド樹脂フィルム４１を裏打ち層４０とし
て設け、反りを減少させる。
(57) Abstract: It is possible to reduce the difference in thermal expansion coefficient between a copper foil and a tape base material of a TAB tape carrier and the warpage caused by the viscoelasticity of an adhesive. A TAB in which a copper foil is adhered to one surface of a tape base made of a polyimide resin film, a wiring pattern is formed by photoetching, and the wiring pattern is protected by a solder resist film. In the tape carrier, an adhesive layer 39 or a polyimide resin film 41 with an adhesive having a thermal expansion coefficient close to that of the copper foil 2 is provided as a backing layer 40 on the other surface of the tape base 20 to reduce warpage.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、液晶用及びＣＳＰ
（Chip Scale Package）用ＴＡＢ（Tape AutomatedBond
ing）テープや、プリンタ用あるいはＬＣＤ（Liquid Cr
ystal Display：液晶表示装置）用ＣＯＦ（Chip on Fil
m）ＴＡＢテープなどの半導体装置用テープキャリアの
構造とその製造方法に関するものである。The present invention relates to a liquid crystal display and a CSP.
(Chip Scale Package) TAB (Tape AutomatedBond)
ing) tape, printer or LCD (Liquid Cr)
ystal Display: COF (Chip on Fil) for liquid crystal display
m) The present invention relates to a structure of a tape carrier for a semiconductor device such as a TAB tape and a manufacturing method thereof.
【０００２】[0002]
【従来の技術】従来のＴＡＢ用テープキャリアの基本構
造は、例えば、図８（ａ）に示すように、ポリイミド樹
脂フィルムから成るテープ基材２０の片面に銅箔２を貼
り合わせた接着剤レス片面銅貼り１層ＣＣＬ（Copper C
lad Laminate）か、又は、図８（ｂ）に示すようにポリ
イミド樹脂フィルムから成るテープ基材２０の片面に接
着剤３を介して銅箔２を貼り合わせた接着剤使用の片面
銅貼り１層ＣＣＬから成る。2. Description of the Related Art The basic structure of a conventional TAB tape carrier is, for example, as shown in FIG. 8A, an adhesive-less tape base 20 made of a polyimide resin film and having a copper foil 2 adhered to one surface thereof. Single-sided copper-clad single-layer CCL (Copper C
One layer of single-sided copper paste using an adhesive in which a copper foil 2 is attached to one side of a tape base material 20 made of a polyimide resin film via an adhesive 3 as shown in FIG. Consists of CCL.
【０００３】従来のＴＡＢテープキャリアは、銅箔２の
Ｃｕ箔（９〜３５μｍ厚さ）をロールラミネートしてキ
ュアした後、フォトレジストをコートしてプレキュアを
行い、露光して、現像、ポストキュアした後、Ｃｕ箔の
エッチングを行い、配線回路パターンを形成した後に、
液状のフォトソルダレジストを塗布しあるいはエポキシ
系ソルダレジストを印刷コートし、これを露光・現像し
て、あるいはポストベークを行い、配線回路パターンの
配線上に絶縁保護膜層を形成していた。In a conventional TAB tape carrier, a Cu foil (9 to 35 μm thick) of a copper foil 2 is roll-laminated and cured, then coated with a photoresist, pre-cured, exposed, developed, and post-cured. After that, after etching the Cu foil to form a wiring circuit pattern,
A liquid photo-solder resist is applied or an epoxy-based solder resist is print-coated, and this is exposed and developed or post-baked to form an insulating protective film layer on the wiring of the wiring circuit pattern.
【０００４】このようなＴＡＢテープキャリアにおいて
は、片面側のソルダレジストに起因して反りが発生する
との認識に立ち、その反りをなくす技術が幾つか提案さ
れている。例えば、特開平４−２８２４４号公報には、
保護用レジスト層と同材質の補正レジスト層をベーステ
ープの反対面に形成することにより、熱履歴を受けた際
のベーステープにおける反り変形を防止する技術が開示
されている。また、特開平７−１６９７９３号公報に
は、ポリイミド系のフィルム基材の表面における回路パ
ターン上に、エポキシ系樹脂のソルダーレジストを塗布
し、裏面にはエポキシ系の裏面樹脂を塗布し、こうして
フィルム基材の両面をエポキシ系樹脂で覆うことによっ
て、フィルム基材の裏面における高信頼性樹脂との密着
力を、表面における密着力と同程度に高くして、表面加
圧に対する強度を高め、反りをなくす技術が開示されて
いる。Based on the recognition that such a TAB tape carrier is warped due to the solder resist on one side, several techniques for eliminating the warpage have been proposed. For example, JP-A-4-28244 discloses that
A technique is disclosed in which a correction resist layer made of the same material as the protective resist layer is formed on the opposite surface of the base tape to prevent the base tape from warping when subjected to heat history. Japanese Patent Application Laid-Open No. 7-169793 discloses that an epoxy resin solder resist is applied on a circuit pattern on the surface of a polyimide film substrate, and an epoxy resin is applied on the back surface. By covering both sides of the substrate with epoxy resin, the adhesive strength with the highly reliable resin on the back side of the film base is increased to the same level as the adhesive strength on the front side, increasing the strength against surface pressing and warping. There is disclosed a technique for eliminating the problem.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、ＴＡＢ
テープキャリアには、絶縁性樹脂フィルムのテープ基材
とこれに貼り合わせる銅箔との間における熱膨張係数の
違いに起因しても、無視し得ない反りが発生する。SUMMARY OF THE INVENTION However, TAB
The tape carrier suffers from non-negligible warpage due to the difference in the coefficient of thermal expansion between the tape base of the insulating resin film and the copper foil to be bonded thereto.
【０００６】すなわち、一般にＴＡＢテープは、ポリイ
ミド樹脂フィルムから成るテープ基材に対して、銅箔が
９〜３５μｍ厚さのものをラミネート・キュアした後、
液状のフォトレジストを塗布し、所定の露光・現像をエ
ッチングし、銅箔の配線回路パターンを形成している。
ところが、銅箔に比較してポリイミドテープの銅箔ラミ
ネート時の熱膨張係数が小さいためと、特に耐熱性の接
着剤を扱った場合、その硬化収縮が大きいことに起因し
て、銅箔のラミネート・キュア後のＴＡＢテープの形状
が平坦ではなくなり、銅箔を内側にして雨ドイ状に反っ
てしまう。そのため、１８μｍ厚さの銅箔を使用して
も、微細なパターン（５０μｍピッチ以下）を均一にエ
ッチングすることができず、Ｃｕ配線がショートしたり
断線したりして、製品不良となってしまう。That is, in general, a TAB tape is obtained by laminating and curing a tape base having a thickness of 9 to 35 μm on a tape base made of a polyimide resin film.
A liquid photoresist is applied, and predetermined exposure and development are etched to form a copper foil wiring circuit pattern.
However, since the thermal expansion coefficient of the polyimide tape when laminating the copper foil is smaller than that of the copper foil, and especially when a heat-resistant adhesive is used, the curing shrinkage is large, so the lamination of the copper foil -The shape of the TAB tape after curing is not flat, and it warps like a rain doi with the copper foil inside. For this reason, even when a copper foil having a thickness of 18 μm is used, a fine pattern (50 μm pitch or less) cannot be uniformly etched, and the Cu wiring is short-circuited or disconnected, resulting in a product defect. .
【０００７】さらに、ＣＳＰ・ＢＧＡ用のＴＡＢテープ
キャリアの場合、テープ反りが大きく実装の生産性が悪
い。Further, in the case of a TAB tape carrier for CSP / BGA, tape warpage is large and mounting productivity is poor.
【０００８】一方、接着剤レス片面銅箔ポリイミドテー
プから成る１層ＣＣＬのＴＡＢテープキャリアにおいて
も、銅箔上にポリイミド樹脂をキャスティングし、ある
いはポリイミド樹脂をラミネートした際、銅箔の硬化収
縮が大きいため、形状が平坦でなくなり雨ドイ状に反っ
てしまう。On the other hand, even in a single-layer CCL TAB tape carrier made of an adhesive-less single-sided copper foil polyimide tape, when the polyimide resin is cast on the copper foil or the polyimide resin is laminated, the curing shrinkage of the copper foil is large. Therefore, the shape becomes not flat and warps like a rain doi.
【０００９】そこで、本発明の目的は、上記課題を解決
し、ＴＡＢテープキャリアの銅箔とテープ基材の熱膨張
係数の違いと接着剤の粘弾性の影響に起因する反りを減
少させる構造の半導体装置用テープキャリアとその製造
方法を提供することにある。Accordingly, an object of the present invention is to solve the above-mentioned problems and to reduce the warpage caused by the difference in the coefficient of thermal expansion between the copper foil and the tape substrate of the TAB tape carrier and the viscoelasticity of the adhesive. An object of the present invention is to provide a tape carrier for a semiconductor device and a method for manufacturing the same.
【００１０】[0010]
【課題を解決するための手段】上記目的を達成するた
め、本発明は、次のように構成したものである。Means for Solving the Problems In order to achieve the above object, the present invention is configured as follows.
【００１１】（１）請求項１の発明に係る半導体装置用
テープキャリアは、ポリイミド樹脂フィルムから成るテ
ープ基材の一方の片面に銅箔を設けてフォトエッチング
により配線パターンを形成し、その配線パターン上をソ
ルダレジスト膜で保護した半導体装置用テープキャリア
において、前記テープ基材の他方の片面に、熱膨張係数
が前記銅箔に近い接着剤層から成る裏打ち層を設けたこ
とを特徴とする。(1) In a tape carrier for a semiconductor device according to the first aspect of the present invention, a copper foil is provided on one side of a tape base made of a polyimide resin film, and a wiring pattern is formed by photoetching. In a tape carrier for a semiconductor device whose upper part is protected by a solder resist film, a backing layer made of an adhesive layer having a thermal expansion coefficient close to that of the copper foil is provided on the other surface of the tape base material.
【００１２】また請求項２の発明に係る半導体装置用テ
ープキャリアは、ポリイミド樹脂フィルムから成るテー
プ基材の一方の片面に銅箔を貼り合わせてフォトエッチ
ングにより配線パターンを形成し、その配線パターン上
をソルダレジスト膜で保護した半導体装置用テープキャ
リアにおいて、前記テープ基材の他方の片面に、熱膨張
係数が前記銅箔に近い別のポリイミド樹脂フィルムに接
着剤層を設けて成る接着剤付ポリイミド樹脂フィルムを
裏打ち層として貼り合わせたことを特徴とする。According to a second aspect of the present invention, there is provided a tape carrier for a semiconductor device, wherein a copper foil is bonded to one side of a tape base made of a polyimide resin film, and a wiring pattern is formed by photoetching. In a tape carrier for a semiconductor device in which is protected by a solder resist film, a polyimide with an adhesive obtained by providing an adhesive layer on another polyimide resin film having a thermal expansion coefficient close to the copper foil on the other surface of the tape base material. The resin film is bonded as a backing layer.
【００１３】本発明の半導体装置用テープキャリアは、
次の２つの形態を含むものである。第１は、接着剤レス
片面銅箔ポリイミドテープ（代表的には接着剤レス片面
銅貼り１層ＣＣＬ（Copper Clad Laminate））のよう
に、テープ基材の片面に接着剤なしで金属箔たる銅箔を
形成した形態であり、第２は、接着剤使用の片面銅貼り
１層ＣＣＬのように、テープ基材の片面に接着剤を用い
て金属箔たる銅箔を貼り合わせた形態である。[0013] The tape carrier for a semiconductor device of the present invention comprises:
It includes the following two forms. The first is that, as in the case of an adhesive-less single-sided copper foil polyimide tape (typically, an adhesive-less single-sided copper-clad one-layer CCL (Copper Clad Laminate)), one side of a tape substrate is made of copper as a metal foil without an adhesive. The second form is a form in which a copper foil as a metal foil is bonded to one side of a tape base material using an adhesive, such as a single-sided copper-bonded single-layer CCL using an adhesive.
【００１４】すなわち、本発明の半導体装置用テープキ
ャリアの好ましい形態は、前記テープ基材に金属箔を貼
り合わせた構造が、接着剤レス片面銅貼り１層ＣＣＬ又
は接着剤使用の片面銅貼り１層ＣＣＬから成るものであ
る（請求項３）。ここで、「銅貼り」とは、銅箔上にテ
ープ基材のポリイミド樹脂をキャスティングしあるいは
ラミネートする場合を含む。That is, in a preferred embodiment of the tape carrier for a semiconductor device according to the present invention, the structure in which a metal foil is adhered to the tape base material is a single-sided copper-clad single-layer CCL or a single-sided copper-clad one using an adhesive. It comprises a layer CCL (claim 3). Here, the “copper paste” includes a case where a polyimide resin of a tape base material is cast or laminated on a copper foil.
【００１５】（２）本発明に係る半導体装置用テープキ
ャリアの製造方法には２つの形態がある。第１は、請求
項３に係る製造方法であり、ポリイミド樹脂フィルムか
ら成るテープ基材の一方の片面に銅箔を設けた構造の半
導体装置用テープキャリアの製造方法において、前記テ
ープ基材の他方の片面に、裏打ち層として、熱膨張係数
が前記銅箔に近い接着剤層を予め貼り合わせ、このテー
プ基材の一方の片面に接着剤なしで前記銅箔を貼り合わ
せて接着剤レス片面銅貼り１層ＣＣＬテープを構成し、
その銅箔面を露光・エッチングして配線パターンを形成
し、その配線パターン上にソルダレジスト膜を形成する
ことを特徴とする。(2) There are two modes in the method of manufacturing a tape carrier for a semiconductor device according to the present invention. The first is a manufacturing method according to claim 3, wherein the tape base for a semiconductor device has a structure in which a copper foil is provided on one side of a tape base made of a polyimide resin film. An adhesive layer having a coefficient of thermal expansion close to that of the copper foil is previously bonded to one surface of the tape base material as a backing layer, and the copper foil is bonded to one surface of the tape base material without an adhesive to form an adhesive-less single-sided copper. Constituting a single-layer CCL tape,
The copper foil surface is exposed and etched to form a wiring pattern, and a solder resist film is formed on the wiring pattern.
【００１６】この製造方法は、接着剤レス片面銅貼り１
層ＣＣＬのように、テープ基材の片面に接着剤なしで金
属箔たる銅箔を形成した形態を対象としたものである。This manufacturing method uses an adhesive-less single-sided copper paste 1
It is intended for a form in which a copper foil as a metal foil is formed on one side of a tape base material without an adhesive, like a layer CCL.
【００１７】第２は、請求項４に係る製造方法であり、
ポリイミド樹脂フィルムから成るテープ基材の一方の片
面に銅箔を貼り合わせた構造の半導体装置用テープキャ
リアの製造方法において、前記テープ基材の他方の片面
に、裏打ち層として、熱膨張係数が前記銅箔に近い別の
ポリイミド樹脂フィルムに接着剤層を設けて成る接着剤
付ポリイミド樹脂フィルムを予め貼り合わせ、このテー
プ基材の一方の片面に接着剤を介して前記銅箔を貼り合
わせて接着剤使用の片面銅貼り１層ＣＣＬテープを構成
し、その銅箔面を露光・エッチングして配線パターンを
形成し、その配線パターン上にソルダレジスト膜を形成
することを特徴とする。The second is a manufacturing method according to claim 4,
In a method for manufacturing a tape carrier for a semiconductor device having a structure in which a copper foil is bonded to one side of a tape base made of a polyimide resin film, the other side of the tape base has a thermal expansion coefficient as a backing layer, A polyimide resin film with an adhesive, which is provided with an adhesive layer on another polyimide resin film close to the copper foil, is bonded in advance, and the copper foil is bonded to one side of this tape base material with an adhesive. The method is characterized in that a single-sided copper-clad single-layer CCL tape using an agent is formed, the copper foil surface is exposed and etched to form a wiring pattern, and a solder resist film is formed on the wiring pattern.
【００１８】この製造方法は、接着剤使用の片面銅貼り
１層ＣＣＬのように、テープ基材の片面に接着剤を用い
て金属箔たる銅箔を貼り合わせた形態を対象としたもの
である。This manufacturing method is intended for a form in which a copper foil as a metal foil is bonded to one surface of a tape base material using an adhesive, such as a single-sided copper-bonded one-layer CCL using an adhesive. .
【００１９】本発明のテープキャリアの製造方法（請求
項３又は４）においては、前記ソルダレジストの硬化処
理を施した後、そのソルダレジスト膜から露出している
配線パターン部分に、Ｓｎ、Ｎｉ、Ａｕ等のめっきを施
すとよい。この場合、配線パターン上に無電解めっきま
たは電気めっきを施し、その後ソルダレジストを塗布し
て硬化処理を施すようにするとよい。 ＜作用＞上述したように、従来では、ポリイミドテープ
の銅箔ラミネート時の熱膨張係数が小さいためと、特に
耐熱性の接着剤の粘弾性の影響とで、ＴＡＢテープの形
状が平坦ではなくなり、銅箔を内側にして雨ドイ状に反
ってしまって平坦性が悪い。そのため微細なパターン
（５０μｍピッチ以下）を均一にすることができず、断
線とショートと寸法公差はずれ等で製品不良となってし
まい、５０μｍ配線ピッチ以下では、ＴＡＢテープの生
産性が悪い。そこで本発明は、反りの小さいＴＡＢテー
プを得られるようにして、これらを改善するものであ
る。In the method for manufacturing a tape carrier of the present invention (claim 3 or 4), after the solder resist is subjected to a curing treatment, Sn, Ni, and Ni are added to the wiring pattern portion exposed from the solder resist film. It is preferable to perform plating of Au or the like. In this case, it is preferable to perform electroless plating or electroplating on the wiring pattern, and then apply a solder resist and perform a hardening process. <Effect> As described above, conventionally, the shape of the TAB tape is not flat due to the small thermal expansion coefficient of the polyimide tape when laminating the copper foil, and particularly due to the viscoelasticity of the heat-resistant adhesive, The flatness is poor because it is warped like a rain doi with the copper foil inside. Therefore, a fine pattern (pitch of 50 μm or less) cannot be made uniform, resulting in a product failure due to disconnection, short-circuit, and deviation of dimensional tolerance, and the like. Accordingly, the present invention is to improve these by enabling a TAB tape having a small warpage to be obtained.
【００２０】本発明は、一方の片面に金属箔たる銅箔を
貼り合わせたポリイミド樹脂フィルムから成るテープ基
材、例えば接着剤レス片面銅貼り１層ＣＣＬ又は接着剤
使用の片面銅貼り１層ＣＣＬの他方の片面に、熱膨張係
数が上記金属箔（銅箔等）に近い接着剤層を裏打ち層と
して形成するか、熱膨張係数が前記銅箔に近い別のポリ
イミド樹脂フィルムに接着剤層を設けて成る接着剤付ポ
リイミド樹脂フィルムを裏打ち層として形成するもので
あり、これにより反りの小さいテープキャリアを構成す
るものである。The present invention relates to a tape base made of a polyimide resin film having one side adhered to a copper foil as a metal foil, for example, an adhesive-less single-sided copper-clad single-layer CCL or a single-sided copper-clad single-layer CCL using an adhesive. An adhesive layer having a thermal expansion coefficient close to the metal foil (copper foil or the like) is formed as a backing layer on the other side of the above, or an adhesive layer is formed on another polyimide resin film having a thermal expansion coefficient close to the copper foil. The polyimide resin film with the adhesive provided is formed as a backing layer, thereby constituting a tape carrier with a small warpage.
【００２１】すなわち、本発明の要点は、接着剤レス片
面銅箔ポリイミドテープ（１層ＣＣＬ）あるいは接着剤
使用の片面Ｃｕ貼りポリイミドあるいはガラスエポキシ
テープを用いて配線パターンを形成してなるＴＡＢ用テ
ープにおいて、接着剤レス片面銅箔ポリイミドテープの
ポリイミド表面にすでに裏打ち層としての接着剤層又は
接着剤付ポリイミド樹脂フィルムを貼り合わせたものを
用いること、又は接着剤使用の片面Ｃｕ貼りポリイミド
テープのポリイミド表面にすでに裏打ち層としての接着
剤層又は接着剤付ポリイミド樹脂フィルムを貼り合わせ
たものを用いることにある。That is, the gist of the present invention is a TAB tape formed by using an adhesive-less single-sided copper foil polyimide tape (single-layer CCL), a single-sided Cu-bonded polyimide using an adhesive, or a glass epoxy tape to form a wiring pattern. In the adhesive-less single-sided copper foil polyimide tape, a polyimide surface with an adhesive layer or a polyimide resin film with an adhesive already used as a backing layer on the polyimide surface An adhesive layer or a polyimide resin film with an adhesive as a backing layer is bonded to the surface.
【００２２】既に述べたように、従来では、図８（ａ）
に示す接着剤レス片面銅貼り１層ＣＣＬ、および図８
（ｂ）に示す接着剤使用の片面銅貼り１層ＣＣＬのいず
れの場合も、ポリイミド樹脂フィルムから成るテープ基
材２０の一方の片面に単に銅箔２を貼り合わせた構造で
ある。従って、従来の場合、銅箔２をラミネートする際
に、テープ基材２０のポリイミド樹脂テープが、耐熱性
の接着剤３及び銅箔２より加熱昇温時の伸びが少なく、
このため冷却して室温に戻った後におけるその収縮量に
差が生じる結果、テープキャリアは銅箔２を内側にして
雨ドイ状に反ってしまう。As described above, in the prior art, FIG.
Adhesive-less single-sided copper-clad single-layer CCL shown in FIG.
Each of the single-sided copper-clad single-layer CCLs using an adhesive shown in (b) has a structure in which a copper foil 2 is simply bonded to one side of a tape base material 20 made of a polyimide resin film. Therefore, in the conventional case, when laminating the copper foil 2, the polyimide resin tape of the tape base material 20 has less elongation when heated and heated than the heat-resistant adhesive 3 and the copper foil 2,
For this reason, as a result of the difference in the amount of shrinkage after cooling and returning to room temperature, the tape carrier warps like a rain doi with the copper foil 2 inside.
【００２３】そこで、本発明では、このような場合、図
２（ａ１）、図３（ｂ１）のように、ポリイミド樹脂フ
ィルムから成るテープ基材２０の銅箔２とは反対側の面
に、銅箔２に近い収縮量つまり熱膨張係数を有する接着
剤層３９を、又は熱膨張係数が銅箔２に近い別のポリイ
ミド樹脂フィルム４１に接着剤層３９を設けて成る接着
剤付ポリイミド樹脂フィルムを、裏打ち層４０として形
成する。そして、この裏打ち層４０付きのテープ基材２
０の他方の片面に接着剤層３を貼り付けたものを第２の
テープ基材として取り扱い、これに銅箔２をラミネート
して、平坦な形状のＴＡＢテープキャリアを製造するも
のである。In this case, according to the present invention, as shown in FIGS. 2 (a1) and 3 (b1), the tape base 20 made of a polyimide resin film is provided on the surface opposite to the copper foil 2. An adhesive layer 39 having a contraction amount close to the copper foil 2, that is, an adhesive layer 39 having a thermal expansion coefficient, or a polyimide resin film with an adhesive obtained by providing the adhesive layer 39 on another polyimide resin film 41 having a thermal expansion coefficient close to the copper foil 2 Is formed as a backing layer 40. Then, the tape base material 2 with the backing layer 40 is provided.
A tape tape carrier having a flat shape is manufactured by treating the adhesive tape 3 attached to the other surface of the tape 0 as a second tape base material, and laminating the copper foil 2 thereon.
【００２４】上記のラミネート・キュアする銅箔として
は、例えば電解あるいは圧延箔で厚さ３〜２５μｍのも
のを用いる。この銅箔は入手可能で粗化面あらさを制御
した電解あるいは圧延箔をもちいれば良い。銅箔の厚さ
が１２〜３５μｍの場合は、入手可能で粗化面あらさを
制御したもので有れば良い。銅箔の厚さが３５μｍを超
えると塩化第二鉄のエッチング液で均一に除去する時間
が長くなりエッチング効率が悪くなる。As the copper foil to be laminated and cured, for example, an electrolytic or rolled foil having a thickness of 3 to 25 μm is used. This copper foil may be an electrolytic or rolled foil which is available and has a controlled roughened surface roughness. In the case where the thickness of the copper foil is 12 to 35 μm, it is sufficient that the copper foil is available and the roughness of the roughened surface is controlled. When the thickness of the copper foil exceeds 35 μm, the time for uniformly removing the copper foil with an etching solution of ferric chloride becomes longer, and the etching efficiency becomes worse.
【００２５】[0025]
【発明の実施の形態】以下、本発明を図示の実施形態に
基づいて説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below based on the illustrated embodiment.
【００２６】図１は本発明のＴＡＢテープキャリアの実
施形態を示したものである。FIG. 1 shows an embodiment of a TAB tape carrier according to the present invention.
【００２７】図１（ａ）は、ポリイミド樹脂フィルムか
ら成るテープ基材２０の一方の片面に接着剤なしで金属
箔たる銅箔２を貼り合わせた接着剤レス片面銅貼り１層
ＣＣＬテープにおいて、そのテープ基材２０の他方の片
面に、熱膨張係数が前記銅箔２に近い接着剤層３９から
成る裏打ち層４０を形成した形態を示す。FIG. 1A shows an adhesive-less single-sided copper-clad single-layer CCL tape in which a copper foil 2 as a metal foil is bonded to one side of a tape base material 20 made of a polyimide resin film without an adhesive. A form in which a backing layer 40 composed of an adhesive layer 39 having a thermal expansion coefficient close to that of the copper foil 2 is formed on the other side of the tape base material 20 is shown.
【００２８】また図１（ｂ）は、ポリイミド樹脂フィル
ムから成るテープ基材２０の一方の片面に接着剤３を介
して金属箔たる銅箔２を貼り合わせた接着剤使用の片面
銅貼り１層ＣＣＬテープにおいて、そのテープ基材２０
の他方の片面に、熱膨張係数が前記銅箔２に近い別のポ
リイミド樹脂フィルム４１に接着剤層３９を設けて成る
接着剤付ポリイミド樹脂フィルムを、裏打ち層４０とし
て貼り合わせた形態を示す。FIG. 1 (b) shows a single-sided copper-bonded single-layer using an adhesive in which a copper foil 2 as a metal foil is bonded to one side of a tape substrate 20 made of a polyimide resin film via an adhesive 3. In a CCL tape, the tape base material 20
The other side shows a form in which a polyimide resin film with an adhesive obtained by providing an adhesive layer 39 on another polyimide resin film 41 having a coefficient of thermal expansion close to the copper foil 2 is bonded as a backing layer 40.
【００２９】上記銅箔２にはフォトエッチングにより配
線パターンが形成され、その配線パターン上にソルダレ
ジスト膜から成る保護膜が形成されて製品としてのＴＡ
Ｂテープキャリアが完成される。A wiring pattern is formed on the copper foil 2 by photoetching, and a protective film made of a solder resist film is formed on the wiring pattern.
The B tape carrier is completed.
【００３０】図２及び図３に、上記２種類のＴＡＢテー
プキャリアの製造方法を示す。図２（ａ１）〜（ａ３）
は、上記図１（ａ）の接着剤レス片面銅貼り１層ＣＣＬ
テープキャリアの製造工程を示し、図３（ｂ１）〜（ｂ
５）は、上記図１（ｂ）の接着剤使用の片面銅貼り１層
ＣＣＬテープキャリアの製造工程を示す。FIGS. 2 and 3 show a method of manufacturing the above two types of TAB tape carriers. FIG. 2 (a1) to (a3)
Is a single-sided copper-clad single-layer CCL shown in FIG.
FIG. 3B illustrates a tape carrier manufacturing process, and FIGS.
5) shows a manufacturing process of the single-sided copper-clad single-layer CCL tape carrier using the adhesive shown in FIG. 1B.
【００３１】前者の接着剤レス片面銅貼り１層ＣＣＬ構
造のテープキャリアの場合は、図２（ａ１）に示すよう
に、ポリイミド樹脂フィルムから成るテープ基材２０の
一方の片面に接着剤なしで銅箔２を貼り合わせた接着剤
レス片面銅貼り１層ＣＣＬテープと、熱膨張係数が前記
銅箔２に近い裏打ち用の接着剤層３９のテープとを用意
し、図２（ａ２）に示すように、前者のテープ基材２０
の他方の片面に裏打ち層４０として接着剤層３９をラミ
ネートすることにより製造される。In the former case of a tape carrier having an adhesive-less single-sided copper-clad single-layer CCL structure, as shown in FIG. 2 (a1), one side of a tape base material 20 made of a polyimide resin film is provided without an adhesive. An adhesive-less single-sided copper-clad single-layer CCL tape with a copper foil 2 bonded thereto and a tape of a backing adhesive layer 39 having a coefficient of thermal expansion close to that of the copper foil 2 were prepared, as shown in FIG. 2 (a2). As described above, the former tape substrate 20
It is manufactured by laminating an adhesive layer 39 as a backing layer 40 on one side of the other.
【００３２】一方、後者の接着剤使用の片面銅貼り１層
ＣＣＬ構造のテープキャリアの場合は、図３（ｂ１）に
示すように、ポリイミド樹脂フィルムから成るテープ基
材２０の片面（銅箔２が設けられる一方の片面に対しそ
の反対側の他方の片面）に、先に裏打ち層４０として、
熱膨張係数が前記銅箔２に近い別のポリイミド樹脂フィ
ルム４１に接着剤層３９を設けて成る接着剤付ポリイミ
ド樹脂フィルムを、ラミネートして成る裏打ち層付テー
プ基材２２を用意する。On the other hand, in the case of the latter tape carrier having a single-sided copper-clad single-layer CCL structure using an adhesive, as shown in FIG. 3 (b1), one side (a copper foil 2) of a tape base material 20 made of a polyimide resin film is used. Is provided on one side opposite to the other side on the other side), as a backing layer 40 first,
A tape base material 22 with a backing layer is prepared by laminating a polyimide resin film with an adhesive in which an adhesive layer 39 is provided on another polyimide resin film 41 having a coefficient of thermal expansion close to the copper foil 2.
【００３３】次に、図３（ｂ２）に示すように、この裏
打ち層付テープ基材２２に対し、その裏打ち層４０の設
けられていない面側である一方の片面に、耐熱性の接着
剤３を塗布又は接着剤シートの形で設ける。Next, as shown in FIG. 3 (b2), a heat-resistant adhesive is applied to one side of the tape substrate 22 with a backing layer, on which the backing layer 40 is not provided. 3 is provided in the form of a coating or adhesive sheet.
【００３４】そして、図３（ｂ３）〜（ｂ５）に示すよ
うに、この接着剤付きテープ基材３２に対し、その接着
剤３の設けられている面側に銅箔２をラミネートする。
この銅箔２がラミネートされる際には、接着剤付きテー
プ基材３２が図３（ｂ４）の如く加熱昇温されることに
なる。しかし、この接着剤付きテープ基材３２には、熱
膨張係数が前記銅箔２に近いポリイミド樹脂フィルム４
１が裏打ちされているので、このＴＡＢテープキャリア
１は、図３（ｂ５）に示すように、冷却して室温に戻っ
た後も変形を生じない。図２のように裏打ち層として接
着剤層３９を貼り合わせた形態の場合（図２（ａ１）〜
（ａ３））においても、同様に変形を生じない。Then, as shown in FIGS. 3 (b3) to (b5), the copper foil 2 is laminated on the adhesive-provided tape base material 32 on the side where the adhesive 3 is provided.
When the copper foil 2 is laminated, the tape base 32 with the adhesive is heated and heated as shown in FIG. 3 (b4). However, this adhesive-backed tape base material 32 has a polyimide resin film 4 having a thermal expansion coefficient close to that of the copper foil 2.
Since the TAB tape carrier 1 is backed, the TAB tape carrier 1 does not deform even after cooling to room temperature as shown in FIG. 3 (b5). In the case where the adhesive layer 39 is bonded as a backing layer as shown in FIG. 2 (FIG. 2 (a1) to FIG.
Similarly, in (a3)), no deformation occurs.
【００３５】このようにテープキャリアの形状が平坦と
なるため、エッチング歩留の改善と生産性を向上させ、
更に半導体素子組み立て実装での生産性と歩留を向上さ
せることができる。特に、５０μｍ配線ピッチ以下の微
細なパターンにおいて、断線やショートや寸法公差はず
れ等による製品不良の発生をなくし、ＴＡＢテープキャ
リアの生産性を向上させることができる。As described above, since the shape of the tape carrier becomes flat, the yield of etching and the productivity are improved.
Further, the productivity and yield in assembling and mounting the semiconductor element can be improved. In particular, in a fine pattern having a wiring pitch of 50 μm or less, it is possible to eliminate the occurrence of product failure due to disconnection, short circuit, deviation in dimensional tolerance, and the like, and to improve the productivity of the TAB tape carrier.
【００３６】[0036]
【実施例】＜実施例１＞図４（ａ）（ｂ）に本発明のＴ
ＡＢテープキャリアとこれを用いた半導体装置の第１の
実施例を示す。<Embodiment 1> FIGS. 4A and 4B show the T of the present invention.
1 shows a first embodiment of an AB tape carrier and a semiconductor device using the same.
【００３７】図４（ａ）に示すように、予め、厚さ２５
μｍ、幅７０mmのポリイミド樹脂フィルムから成るテー
プ基材２０に、裏打ち層４０として、熱膨張係数が次に
述べる銅箔２に近い厚さ１２．５μｍのポリイミド樹脂
フィルム４１に厚さ１２μｍの接着剤層３９を形成して
成る接着剤付ポリイミド樹脂フィルムを、ロールラミネ
ート・キュアして設け、裏打ち層付テープ基材２２（図
３（ｂ２））とする。As shown in FIG. 4A, the thickness 25
12 μm thick adhesive on a 12.5 μm thick polyimide resin film 41 whose thermal expansion coefficient is close to that of the copper foil 2 described below as a backing layer 40 on a tape base 20 made of a polyimide resin film having a width of 70 μm and a width of 70 mm. A polyimide resin film with an adhesive formed with the layer 39 is provided by roll lamination and curing to form a tape base material 22 with a backing layer (FIG. 3 (b2)).
【００３８】これにエポキシ系接着剤３を貼り合わせ接
着剤付きテープ基材３２（図３（ｂ３））を得る。これ
にパンチングで送り穴（パーフォレーション）とＣＳＰ
・ＢＧＡのはんだボールを形成するためのポリイミドビ
アホール（はんだボール用ビアホール１２）（３００μ
ｍ直径）を１４４穴打ち抜き、次いで銅箔２として三井
金属鉱業製のＦＱ−ＶＬＰ箔銅箔（厚さ箔１８μｍ）テ
ープをラミネート・キュアした後、次に、フォトアプリ
ケーションで銅箔面を露光・エッチングして、銅箔信号
層のインナリード４を含む配線パターン５（５０μｍピ
ッチ）を形成した。次に、配線パターン５上に全面に無
電解Ｓｎめっき２１を０．４μｍ厚さ施し、その後に液
状ソルダレジスト１６を塗布して、ＴＡＢ用テープキャ
リア１の完成品とした。The epoxy-based adhesive 3 is adhered to this to obtain a tape base material 32 with an adhesive (FIG. 3 (b3)). Punching holes (perforations) and CSP
-A polyimide via hole for forming a BGA solder ball (via hole 12 for solder ball) (300 μm)
After punching out 144 holes with a diameter of m (m diameter) and then laminating and curing a FQ-VLP foil copper foil (thickness foil 18 μm) tape manufactured by Mitsui Mining & Smelting Co. as copper foil 2, the copper foil surface was then exposed and exposed by photo application. By etching, a wiring pattern 5 (50 μm pitch) including the inner lead 4 of the copper foil signal layer was formed. Next, an electroless Sn plating 21 was applied to the entire surface of the wiring pattern 5 to a thickness of 0.4 μm, and then a liquid solder resist 16 was applied to obtain a completed TAB tape carrier 1.
【００３９】比較のため、上記の組み合わせで、図８
（ｂ）の従来品として、厚さ５０μｍ、幅７０mmのポリ
イミド樹脂フィルムから成るテープ基材２０に、エポキ
シ系接着剤３を貼り合わせて接着剤付きテープ基材と
し、これに銅箔２として三井金属鉱業製のＦＱ−ＶＬＰ
箔銅箔厚さ箔１８μｍテープをラミネート・キュアした
後、次にフォトアプリケーションで配線パターン５（５
０μｍピッチ）を形成したものを作成した。For comparison, FIG.
As a conventional product of (b), a tape base material 20 made of a polyimide resin film having a thickness of 50 μm and a width of 70 mm is laminated with an epoxy-based adhesive 3 to form a tape base material with an adhesive. FQ-VLP made by metal mining
After laminating and curing an 18 μm-thick copper foil foil, the wiring pattern 5 (5
(0 μm pitch).
【００４０】ソルダレジスト１６を塗布する前の段階で
従来品と本発明品を比較した結果、本発明のテープキャ
リアのものが、テープの反りが１／２以下と小さくな
り、断線、ショートが少なく、生産歩留が向上した。ま
た、ソルダレジスト１６を塗布した後の段階でも、フォ
トレジストの搬送中の接触によるレジスト面の擦れが減
少した。As a result of comparison between the conventional product and the product of the present invention before the solder resist 16 is applied, the tape carrier of the present invention has a tape warpage of less than ２ and less disconnection and short circuit. , The production yield improved. In addition, even after the solder resist 16 was applied, rubbing of the resist surface due to contact during the transfer of the photoresist was reduced.
【００４１】次に、図４（ｂ）に示すように、上記ＴＡ
Ｂテープキャリアを用いて半導体装置パッケージを組み
立てた。まず、ＴＡＢ用テープキャリア１上に半導体素
子（半導体チップ）１０を設け、その突き出し電極（Ａ
ｕのバンプ電極２６）をインナリード４のめっきパター
ンとフリップチップ・インナリードボンディング（フリ
ップチップ接合２４）してＴＡＢテープの配線パターン
５と接続した。Next, as shown in FIG.
A semiconductor device package was assembled using the B tape carrier. First, a semiconductor element (semiconductor chip) 10 is provided on a TAB tape carrier 1, and a projecting electrode (A
u bump electrode 26) was connected to the wiring pattern 5 of the TAB tape by flip chip / inner lead bonding (flip chip bonding 24) with the plating pattern of the inner lead 4.
【００４２】次に、この接続部をアンダフィル剤３３で
充満した後、半導体素子１０側の片面をトランスファー
モールド樹脂３６にてトランスファーモールドし、キュ
ア後、はんだボール用ビアホール１２にはんだボール２
５を搭戴して半導体装置パッケージの完成品とした。Next, after filling this connection portion with an underfill agent 33, one surface of the semiconductor element 10 side is transfer-molded with a transfer molding resin 36, and after curing, the solder ball 2 is inserted into the solder ball via hole 12.
5 to complete the semiconductor device package.
【００４３】その際、本発明の構造と製造方法によるテ
ープキャリアのものが、反りによる搬送のトラブルとテ
ープ反りに起因する半導体素子の割れもなく、片面をト
ランスファーモールドすることによる樹脂漏れ（テープ
反りに起因する歪み）も少なく、良好な組み立てができ
た。At this time, the tape carrier of the structure and the manufacturing method of the present invention has no trouble in conveyance due to warpage and no cracking of the semiconductor element due to the warpage of the tape, and has a resin leakage due to transfer molding on one side (tape warpage). ), Resulting in good assembly.
【００４４】＜実施例２＞図５に本発明のＴＡＢテープ
キャリアとこれを用いた半導体装置の第２の実施例を示
す。<Embodiment 2> FIG. 5 shows a TAB tape carrier according to a second embodiment of the present invention and a semiconductor device using the same.
【００４５】図５に示すように、予め、厚さ２５μｍ、
幅７０mmのポリイミド樹脂フィルムから成るテープ基材
２０に、裏打ち層４０として、熱膨張係数が次に述べる
銅箔２に近い厚さ１２．５μｍのポリイミド樹脂フィル
ム４１に厚さ１２μｍの接着剤層３９を形成して成る接
着剤付ポリイミド樹脂フィルムをロールラミネート・キ
ュアして設け、裏打ち層付テープ基材２２（図３（ｂ
２））とする。これにエポキシ系接着剤３を貼り合わせ
接着剤付きテープ基材３２（図３（ｂ３））を得る。こ
れにパンチングで送り穴（パーフォレーション）とＣＳ
Ｐ・ＢＧＡのはんだボールを形成するためのはんだボー
ル用ビアホール１２（３００μｍ直径）を１４４穴打ち
抜き、次いで銅箔２として三井金属鉱業製のＦＱ−ＶＬ
Ｐ箔銅箔（厚さ箔１８μｍ）テープをラミネート・キュ
アした後、フォトアプリケーションで銅箔面を露光・エ
ッチングして、銅箔信号層のインナリード４を含む配線
パターン５（５０μｍピッチ）を形成した。As shown in FIG. 5, a thickness of 25 μm
An adhesive layer 39 having a thickness of 12 μm is formed on a polyimide resin film 41 having a thermal expansion coefficient close to the copper foil 2 having a thermal expansion coefficient of 12.5 μm as a backing layer 40 on a tape base 20 made of a polyimide resin film having a width of 70 mm. A polyimide resin film with an adhesive formed by forming a laminate is provided by roll lamination and curing, and a tape base material 22 with a backing layer (see FIG.
2)). The epoxy-based adhesive 3 is attached to this to obtain a tape base material 32 with an adhesive (FIG. 3 (b3)). Punch holes (perforations) and CS
A 144-hole via hole 12 (300 μm diameter) for a solder ball for forming a P.BGA solder ball is punched out, and then an FQ-VL manufactured by Mitsui Kinzoku Mining as copper foil 2
After laminating and curing a P foil copper foil (thick foil 18 μm) tape, the copper foil surface is exposed and etched by photo application to form a wiring pattern 5 (50 μm pitch) including the inner lead 4 of the copper foil signal layer. did.
【００４６】次に、図４の場合と異なり、配線パターン
５に液状ソルダレジスト１６を塗布し、ソルダレジスト
の硬化処理を施した後、そのソルダレジスト塗布層（ソ
ルダレジスト膜）から露出している配線パターン部分
（インナーリード等の端子領域）に、ＮｉとＡｕの電気
めっき（Ｎｉ／Ａｕめっき２８）を１．０μｍと０．４
μｍ厚さに施して、ＴＡＢ用テープキャリアの完成品と
した。Next, different from the case of FIG. 4, a liquid solder resist 16 is applied to the wiring pattern 5, and after the solder resist is cured, the wiring pattern 5 is exposed from the solder resist coating layer (solder resist film). Electroplating of Ni and Au (Ni / Au plating 28) to 1.0 μm and 0.4 μm is applied to the wiring pattern portion (terminal regions such as inner leads).
It was applied to a thickness of μm to obtain a completed TAB tape carrier.
【００４７】比較のため、上記の組み合わせで、図８
（ｂ）の従来品として、厚さ５０μｍ、幅７０mmのポリ
イミド樹脂フィルムから成るテープ基材２０に、エポキ
シ系接着剤３を貼り合わせて接着剤付きテープ基材と
し、これに銅箔２として三井金属鉱業製のＦＱ−ＶＬＰ
箔銅箔厚さ箔１８μｍテープをラミネート・キュアした
後、次にフォトアプリケーションで配線パターン５（５
０μｍピッチ）を形成したものを作成した。For comparison, FIG.
As a conventional product of (b), a tape base material 20 made of a polyimide resin film having a thickness of 50 μm and a width of 70 mm is laminated with an epoxy-based adhesive 3 to form a tape base material with an adhesive. FQ-VLP made by metal mining
After laminating and curing an 18 μm-thick copper foil foil, the wiring pattern 5 (5
(0 μm pitch).
【００４８】その結果、本発明のポリイミドテープのも
のが、テープ反りが１／２以下と小さくなり、断線、シ
ョートが少なく、フォトレジストの搬送中の接触による
レジスト面の擦れも減少し、歩留が向上した。As a result, in the polyimide tape of the present invention, the warpage of the tape is reduced to 以下 or less, the number of disconnections and short circuits is small, the rubbing of the resist surface due to the contact during the transfer of the photoresist is reduced, and the yield is reduced. Improved.
【００４９】次に、上記ＴＡＢテープキャリアを用いて
半導体装置パッケージを組み立てた。まず、ＴＡＢ用テ
ープキャリアのめっきパターンに、半導体素子（半導体
チップ）１０をダイアタッチ剤３４で固定した後、半導
体素子１０の素子電極と配線パターン５の銅配線が露出
しているパッド領域（Ｎｉ／Ａｕめっき２８）とを金ワ
イヤ８にてワイヤボンディングし、ＴＡＢテープの配線
パターン５と接続した。Next, a semiconductor device package was assembled using the TAB tape carrier. First, after the semiconductor element (semiconductor chip) 10 is fixed to the plating pattern of the TAB tape carrier with the die attach agent 34, the pad area (Ni) where the element electrode of the semiconductor element 10 and the copper wiring of the wiring pattern 5 are exposed. / Au plating 28) was wire-bonded with a gold wire 8 and connected to the wiring pattern 5 of the TAB tape.
【００５０】次に、半導体素子１０側の片面をトランス
ファーモールド樹脂３６にてトランスファーモールド
し、キュア後、はんだボール用ビアホール１２にはんだ
ボール２５を搭載して完成品とした。Next, one surface on the side of the semiconductor element 10 was transfer-molded with a transfer mold resin 36, and after curing, a solder ball 25 was mounted in the via hole 12 for a solder ball to obtain a finished product.
【００５１】その際、本発明の構造と製造方法によるテ
ープキャリアのものが、反りによる搬送のトラブルとテ
ープ反りに起因する半導体素子の割れもなく、片面をト
ランスファーモールドすることによる樹脂漏れ（テープ
反りに起因する歪み）も少なく、良好な組み立てができ
た。At this time, the tape carrier of the structure and the manufacturing method of the present invention has no trouble of transport due to warpage and no cracking of the semiconductor element due to the warpage of the tape, and has a resin leakage (transfer of the tape due to transfer molding on one side). ), Resulting in good assembly.
【００５２】＜実施例３＞図６に本発明のＴＡＢテープ
キャリアとこれを用いた半導体装置の第３の実施例を示
す。このＴＡＢテープキャリアは、図４（ａ）と基本的
に同じ構成であるが、中央に素子搭載部たるデバイスホ
ール６を有する点で相違している。<Embodiment 3> FIG. 6 shows a third embodiment of the TAB tape carrier of the present invention and a semiconductor device using the same. This TAB tape carrier has basically the same configuration as that of FIG. 4A, but differs in that it has a device hole 6 which is an element mounting portion in the center.
【００５３】また、このテープキャリアには、デバイス
ホール６の箇所で半導体素子１０が搭載されフリップチ
ップ接続された後、接着剤３８を介してスティフナー３
７が設けられて、半導体装置パッケージが構成されてい
る。After the semiconductor element 10 is mounted on the tape carrier at the location of the device hole 6 and flip-chip connected, the stiffener 3 is attached via the adhesive 38.
7 are provided to form a semiconductor device package.
【００５４】＜変形例＞上記実施例（図４〜図６）のＴ
ＡＢテープキャリアでは、接着剤使用の片面銅貼り１層
ＣＣＬの場合を例にして説明したが、本発明はこれに限
られるものではなく、例えば、図７に示す接着剤レス片
面銅貼り１層ＣＣＬ２３の場合にも適用することができ
る。また、この接着剤レスの片面配線のフリップチップ
接合のＢＧＡ半導体装置用のＴＡＢテープキャリアや、
接着剤レスの片面配線のインナリードボンディングタイ
プおよびワイヤボンディングタイプのＴＡＢテープキャ
リアにも応用することが可能である。<Modification> T in the above embodiment (FIGS. 4 to 6)
In the AB tape carrier, an example of a single-sided copper-clad single-layer CCL using an adhesive has been described, but the present invention is not limited to this. For example, an adhesive-less single-sided copper-clad single-layer shown in FIG. The present invention can also be applied to the case of the CCL 23. Also, a TAB tape carrier for a BGA semiconductor device in which the adhesive-less single-sided wiring is flip-chip bonded,
The present invention can also be applied to an adhesive-less single-sided wiring inner lead bonding type and wire bonding type TAB tape carrier.
【００５５】ここで、上記実施例（図４〜図７）の作用
効果をまとめれば、次のようになる。Here, the functions and effects of the above embodiment (FIGS. 4 to 7) are summarized as follows.
【００５６】（１）本実施例のＴＡＢ用テープキャリア
は、テープ基材の銅箔と反対側に熱膨張係数が銅箔に近
い裏打ち層を具備するため、銅箔を貼り合わせて室温に
戻ったときの収縮量が、銅箔と接着剤の収縮量に近づく
ため、テープの反りを小さく制御することができ、その
結果、微細配線のエッチング歩留も向上し、品質の安定
したＴＡＢ用テープキャリアを供給することができる。(1) The TAB tape carrier of the present embodiment has a backing layer having a thermal expansion coefficient close to that of the copper foil on the side opposite to the copper foil of the tape base material. The amount of shrinkage when the tape approaches the amount of shrinkage of the copper foil and adhesive can control the warpage of the tape to a small degree. As a result, the etching yield of fine wiring is improved, and TAB tape with stable quality is obtained. Carrier can be supplied.
【００５７】（２）本実施例のＴＡＢ用テープキャリア
を用い、そのめっきパターンに半導体素子をダイアタッ
チ剤で固定した後ワイヤボンディングしてＴＡＢ用テー
プキャリアの配線と接続し、更に半導体素子側の片面を
トランスファーモールドし、キュア後はんだボールを搭
載して半導体装置を組み立てた場合、裏打ち層を具備し
ない従来のテープキャリアを用いた場合と比較し、本発
明の製法とその構造のものは、反りによる搬送のトラブ
ルがなく、またテープ反りに起因する半導体素子（チッ
プ）の割れもなく、片面をトランスファーモールドした
ことによる樹脂漏れやテープ反りに起因する歪みも少な
く、良好な組み立てができる。(2) Using the TAB tape carrier of this embodiment, the semiconductor element is fixed to the plating pattern with a die attach agent, and then wire-bonded to connect to the wiring of the TAB tape carrier. When a semiconductor device is assembled by transfer molding one side and curing after mounting a solder ball, the manufacturing method and the structure of the present invention are warped compared with the case of using a conventional tape carrier without a backing layer. There is no transport trouble caused by the tape warping, the semiconductor element (chip) is not cracked due to the tape warping, the resin leakage due to transfer molding on one side and the distortion due to the tape warping are small, and good assembly can be performed.
【００５８】（３）本実施例のＴＡＢ用テープキャリア
は、テープの反りが小さいため、微細配線（５０μｍピ
ッチ以下）のエッチング形状が良く、エッチングファク
タが３．５以上と向上するため、絶縁抵抗性が高く、ま
た、耐マイグレーション特性に優れている。(3) The tape carrier for TAB of the present embodiment has a small tape warpage, so that the etching shape of fine wiring (50 μm pitch or less) is good, and the etching factor is improved to 3.5 or more. High migration resistance and excellent migration resistance.
【００５９】（４）本実施例のＴＡＢ用テープキャリア
は、銅箔の厚さを選定することにより、６０μｍピッチ
以下の微細配線を効率良く生産することができ、しかも
３０μｍピッチ（Ｌｉｎｅ／Ｓｐａｃｅ＝１５μｍ／５
μｍ）の配線の形成が容易なため、スリムな設計が可能
となり、小型化が容易なＢＧＡ・ＣＳＰ構造のＴＡＢ用
テープキャリアを供給することができる。(4) The tape carrier for TAB of this embodiment can efficiently produce fine wiring having a pitch of 60 μm or less by selecting the thickness of the copper foil, and furthermore, has a pitch of 30 μm (Line / Space = 15 μm / 5
μm) can be easily formed, so that a slim design is possible, and a TAB tape carrier having a BGA / CSP structure that can be easily miniaturized can be supplied.
【００６０】＜使用方法、応用システムなど＞本発明の
ＴＡＢ用テープキャリアは、耐マイグレーション特性に
優れた、微細配線（ピッチ６０μｍ以下）のデバイスホ
ール無しのフリップチップ接続用、および、デバイスホ
ール有りのビームリードタイプのＬＣＤ（液晶ディスプ
レイ）用として適用することが可能である。<How to Use, Applied System, etc.> The TAB tape carrier of the present invention is excellent in anti-migration characteristics, for connecting fine-chip (pitch: 60 μm or less) flip-chips without device holes, and for devices with device holes. It can be applied to a beam lead type LCD (liquid crystal display).
【００６１】[0061]
【発明の効果】以上説明したように本発明によれば、次
のような優れた効果が得られる。As described above, according to the present invention, the following excellent effects can be obtained.
【００６２】（１）本発明のテープキャリア（請求項１
〜２）によれば、一方の片面に金属箔たる銅箔を設けた
ポリイミド樹脂フィルムから成るテープ基材、例えば接
着剤レス片面銅貼り１層ＣＣＬ、又は接着剤使用の片面
銅貼り１層ＣＣＬの他方の片面に、熱膨張係数が上記金
属箔（銅箔等）に近い裏打ち層を、接着剤層又は接着剤
付ポリイミド樹脂フィルムの形で具備するため、銅箔を
貼り合わせて室温に戻ったときの収縮量が、銅箔と接着
剤の収縮量に近づく。このため、テープの反りを小さく
制御することができ、その結果、微細配線のエッチング
歩留も向上し、品質の安定したＴＡＢ用テープキャリア
を供給することができる。(1) The tape carrier of the present invention (claim 1)
According to 2), a tape base made of a polyimide resin film provided with a copper foil as a metal foil on one side, for example, an adhesive-less single-sided copper-clad single-layer CCL or a single-sided copper-bonded single-layer CCL using an adhesive On the other side of the above, a backing layer having a coefficient of thermal expansion close to that of the above metal foil (such as copper foil) is provided in the form of an adhesive layer or a polyimide resin film with an adhesive. The amount of shrinkage when approaching approaches the amount of shrinkage of the copper foil and the adhesive. For this reason, the warpage of the tape can be controlled to be small, and as a result, the etching yield of fine wiring can be improved, and a TAB tape carrier with stable quality can be supplied.
【００６３】本発明のテープキャリアは、テープの反り
が小さいため微細配線（５０μｍピッチ以下）のエッチ
ング形状が良く、エッチングファクタが３．５以上と向
上するため、絶縁抵抗性が高く、また、耐マイグレーシ
ョン特性に優れている。The tape carrier of the present invention has a small tape warpage, so that the etching shape of the fine wiring (50 μm pitch or less) is good, and the etching factor is improved to 3.5 or more, so that the insulation resistance is high and the tape resistance is high. Excellent migration characteristics.
【００６４】本発明のテープキャリアは、銅箔の厚さを
選定することにより、６０μｍピッチ以下の微細配線の
ものを効率良く生産することができ、しかも３０μｍピ
ッチ（Ｌｉｎｅ／Ｓｐａｃｅ＝１５μｍ／５μｍ）の配
線の形成が容易なため、スリムな設計が可能となり小型
化に容易なＢＧＡ・ＣＳＰ構造のＴＡＢ用テープキャリ
アを供給することができる。By selecting the thickness of the copper foil, the tape carrier of the present invention can efficiently produce a fine wiring having a pitch of 60 μm or less, and furthermore, a pitch of 30 μm (Line / Space = 15 μm / 5 μm). Since it is easy to form the wiring, a TAB tape carrier having a BGA / CSP structure which can be made slim and easy to miniaturize can be supplied.
【００６５】（２）本発明のテープキャリアの製造方法
（請求項３〜４）によれば、接着剤レス片面銅貼り１層
ＣＣＬ又は接着剤使用の片面銅貼り１層ＣＣＬのＴＡＢ
用テープキャリアを製造するに際し、ポリイミド樹脂フ
ィルムから成るテープ基材の銅箔とは反対側の面に、テ
ープ基材と同種であって銅箔に近い熱膨張係数を有する
裏打ち層を、接着剤層又は接着剤付ポリイミド樹脂フィ
ルムの形で形成するため、ＴＡＢ用テープキャリアの製
造の初期工程より最終工程に至るまで、反りのないテー
プキャリアを取り扱うことができ、製造工程全体の効率
の向上に寄与することができる。(2) According to the method for manufacturing a tape carrier of the present invention (claims 3 and 4), the single-sided copper-clad single-layer CCL without adhesive or the single-sided copper-clad single-layer CCL with adhesive is used for TAB.
When producing a tape carrier, on the side opposite to the copper foil of the tape base made of a polyimide resin film, a backing layer having the same thermal expansion coefficient as that of the tape base and close to the copper foil, an adhesive Since it is formed in the form of a layer or a polyimide resin film with an adhesive, it is possible to handle tape carriers without warping from the initial process to the final process of TAB tape carrier production, improving the efficiency of the entire production process. Can contribute.
【００６６】また、このＴＡＢ用テープキャリアを用い
た半導体装置パッケージの製造に際しても、反りによる
搬送のトラブルがなく、またテープ反りに起因する半導
体素子（チップ）の割れもなく、片面をトランスファー
モールドよる樹脂漏れやテープ反りに起因する歪みも少
なく、良好な組み立てができる。Also, when manufacturing a semiconductor device package using the TAB tape carrier, there is no transfer trouble due to warpage, there is no breakage of the semiconductor element (chip) due to tape warpage, and one side is formed by transfer molding. There is little distortion due to resin leakage or tape warpage, and good assembly can be performed.
【図１】本発明のＴＡＢ用テープキャリアの２つの基本
構造を示す横断面図である。FIG. 1 is a cross-sectional view showing two basic structures of a TAB tape carrier of the present invention.
【図２】本発明のＴＡＢ用テープキャリアの第１の基本
構造の製造方法を示した図である。FIG. 2 is a view showing a method of manufacturing a first basic structure of the TAB tape carrier of the present invention.
【図３】本発明のＴＡＢ用テープキャリアの第２の基本
構造の製造方法を示した図である。FIG. 3 is a view showing a method for manufacturing a second basic structure of the TAB tape carrier of the present invention.
【図４】本発明の第１の実施例を示したもので、（ａ）
はＴＡＢテープキャリアの横断面図、（ｂ）はそれを用
いた半導体装置の横断面図である。FIG. 4 shows a first embodiment of the present invention, in which (a)
1 is a cross-sectional view of a TAB tape carrier, and FIG. 1B is a cross-sectional view of a semiconductor device using the same.
【図５】本発明の第２の実施例を示す横断面図である。FIG. 5 is a cross sectional view showing a second embodiment of the present invention.
【図６】本発明の第３の実施例を示す横断面図である。FIG. 6 is a cross sectional view showing a third embodiment of the present invention.
【図７】本発明の他の実施例を示す横断面図である。FIG. 7 is a cross sectional view showing another embodiment of the present invention.
【図８】従来のＴＡＢ用テープキャリアの基本構造図で
ある。FIG. 8 is a basic structural view of a conventional TAB tape carrier.
【図９】従来のＴＡＢ用テープキャリアのラミネート・
キュア後の横断面を示す説明図である。FIG. 9 shows a laminate of a conventional TAB tape carrier.
It is explanatory drawing which shows the cross section after cure.
２ 銅箔 ３ 接着剤 ４ インナリード ５ 配線パターン １２ はんだボール用ビアホール １６ ソルダレジスト ２０ ポリイミド樹脂フィルムから成るテープ基材 ２２ 裏打ち層付テープ基材 ２３ 接着剤レス片面銅貼り１層ＣＣＬ ３２ 接着剤付きテープ基材 ３８ 接着剤 ３９ 接着剤層 ４０ 裏打ち層 ４１ 別のポリイミド樹脂フィルム 2 Copper Foil 3 Adhesive 4 Inner Lead 5 Wiring Pattern 12 Via Hole for Solder Ball 16 Solder Resist 20 Tape Base Made of Polyimide Resin Film 22 Tape Base with Backing Layer 23 Adhesive-less Single-Side Copper Paste Single Layer CCL 32 With Adhesive Tape base material 38 Adhesive 39 Adhesive layer 40 Backing layer 41 Another polyimide resin film
Claims (4)
材の一方の片面に銅箔を設けてフォトエッチングにより
配線パターンを形成し、その配線パターン上をソルダレ
ジスト膜で保護した半導体装置用テープキャリアにおい
て、 前記テープ基材の他方の片面に、熱膨張係数が前記銅箔
に近い接着剤層から成る裏打ち層を設けたことを特徴と
する半導体装置用テープキャリア。1. A tape carrier for a semiconductor device in which a copper foil is provided on one side of a tape base made of a polyimide resin film to form a wiring pattern by photoetching, and the wiring pattern is protected by a solder resist film. A tape carrier for a semiconductor device, wherein a backing layer made of an adhesive layer having a thermal expansion coefficient close to that of the copper foil is provided on the other surface of the tape base material.
材の一方の片面に銅箔を貼り合わせてフォトエッチング
により配線パターンを形成し、その配線パターン上をソ
ルダレジスト膜で保護した半導体装置用テープキャリア
において、 前記テープ基材の他方の片面に、熱膨張係数が前記銅箔
に近い別のポリイミド樹脂フィルムに接着剤層を設けて
成る接着剤付ポリイミド樹脂フィルムを裏打ち層として
貼り合わせたことを特徴とする半導体装置用テープキャ
リア。2. A tape carrier for a semiconductor device in which a copper foil is bonded to one side of a tape base made of a polyimide resin film to form a wiring pattern by photoetching, and the wiring pattern is protected by a solder resist film. The other one surface of the tape substrate, the coefficient of thermal expansion is bonded to another polyimide resin film close to the copper foil, an adhesive-attached polyimide resin film formed by providing an adhesive layer as a backing layer, Tape carrier for semiconductor devices.
材の一方の片面に銅箔を設けた構造の半導体装置用テー
プキャリアの製造方法において、 前記テープ基材の他方の片面に、裏打ち層として、熱膨
張係数が前記銅箔に近い接着剤層を予め貼り合わせ、 このテープ基材の一方の片面に接着剤なしで前記銅箔を
貼り合わせて接着剤レス片面銅貼り１層ＣＣＬテープを
構成し、 その銅箔面を露光・エッチングして配線パターンを形成
し、その配線パターン上にソルダレジスト膜を形成する
ことを特徴とする半導体装置用テープキャリアの製造方
法。3. A method of manufacturing a tape carrier for a semiconductor device having a structure in which a copper foil is provided on one side of a tape base made of a polyimide resin film, wherein a heat insulating layer is provided on the other side of the tape base as a backing layer. An adhesive layer having a coefficient of expansion close to the copper foil is bonded in advance, and the copper foil is bonded to one side of the tape base without an adhesive to form an adhesive-less single-sided copper-clad single-layer CCL tape, A method for manufacturing a tape carrier for a semiconductor device, comprising: exposing and etching a copper foil surface to form a wiring pattern; and forming a solder resist film on the wiring pattern.
材の一方の片面に銅箔を貼り合わせた構造の半導体装置
用テープキャリアの製造方法において、 前記テープ基材の他方の片面に、裏打ち層として、熱膨
張係数が前記銅箔に近い別のポリイミド樹脂フィルムに
接着剤層を設けて成る接着剤付ポリイミド樹脂フィルム
を予め貼り合わせ、 このテープ基材の一方の片面に接着剤を介して前記銅箔
を貼り合わせて接着剤使用の片面銅貼り１層ＣＣＬテー
プを構成し、 その銅箔面を露光・エッチングして配線パターンを形成
し、その配線パターン上にソルダレジスト膜を形成する
ことを特徴とする半導体装置用テープキャリアの製造方
法。4. A method of manufacturing a tape carrier for a semiconductor device having a structure in which a copper foil is bonded to one side of a tape base made of a polyimide resin film, wherein a backing layer is formed on the other side of the tape base. A polyimide resin film with an adhesive having an adhesive layer provided on another polyimide resin film having a coefficient of thermal expansion close to that of the copper foil is bonded in advance, and the copper foil is bonded to one side of this tape base via an adhesive. A single-sided copper-clad single-layer CCL tape using an adhesive, and exposing and etching the copper foil surface to form a wiring pattern, and forming a solder resist film on the wiring pattern. Of manufacturing a tape carrier for a semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001096761A JP2002299387A (en) | 2001-03-29 | 2001-03-29 | Tape carrier for semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001096761A JP2002299387A (en) | 2001-03-29 | 2001-03-29 | Tape carrier for semiconductor device and method of manufacturing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002299387A true JP2002299387A (en) | 2002-10-11 |
Family
ID=18950643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001096761A Pending JP2002299387A (en) | 2001-03-29 | 2001-03-29 | Tape carrier for semiconductor device and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002299387A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100356553C (en) * | 2003-04-25 | 2007-12-19 | 三井金属矿业株式会社 | Thin flm bearing belt of mounting electronic parts, its prodn. method and printing screen for coating welding resistance agent |
| EP1851805A4 (en) * | 2005-01-26 | 2010-10-20 | United Solar Ovonic Corp | METHOD FOR REMOVING WINDING FOR DEVICES ON THIN FLEXIBLE SUBSTRATES AND DEVICES PRODUCED ACCORDING TO SAID METHOD |
| KR20130137992A (en) * | 2012-06-08 | 2013-12-18 | 삼성전자주식회사 | Double side adhesive tape, semiconductor packages and methods of fabricating the same |
-
2001
- 2001-03-29 JP JP2001096761A patent/JP2002299387A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100356553C (en) * | 2003-04-25 | 2007-12-19 | 三井金属矿业株式会社 | Thin flm bearing belt of mounting electronic parts, its prodn. method and printing screen for coating welding resistance agent |
| EP1851805A4 (en) * | 2005-01-26 | 2010-10-20 | United Solar Ovonic Corp | METHOD FOR REMOVING WINDING FOR DEVICES ON THIN FLEXIBLE SUBSTRATES AND DEVICES PRODUCED ACCORDING TO SAID METHOD |
| KR20130137992A (en) * | 2012-06-08 | 2013-12-18 | 삼성전자주식회사 | Double side adhesive tape, semiconductor packages and methods of fabricating the same |
| KR101958831B1 (en) * | 2012-06-08 | 2019-07-02 | 삼성전자주식회사 | Double Side Adhesive Tape, Semiconductor packages and methods of fabricating the same |
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