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JP2002296617A - Display device and liquid crystal display device - Google Patents

Display device and liquid crystal display device

Info

Publication number
JP2002296617A
JP2002296617A JP2001094911A JP2001094911A JP2002296617A JP 2002296617 A JP2002296617 A JP 2002296617A JP 2001094911 A JP2001094911 A JP 2001094911A JP 2001094911 A JP2001094911 A JP 2001094911A JP 2002296617 A JP2002296617 A JP 2002296617A
Authority
JP
Japan
Prior art keywords
display device
signal line
pixel
capacitor
tft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001094911A
Other languages
Japanese (ja)
Inventor
Yoshiaki Aoki
木 良 朗 青
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2001094911A priority Critical patent/JP2002296617A/en
Publication of JP2002296617A publication Critical patent/JP2002296617A/en
Withdrawn legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Thin Film Transistor (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a display device and a liquid crystal display device capable of improving the display quality and lowering power consumption without complicating the structures. SOLUTION: The display device comprises a pixel array part 2, a signal line driving circuit 3 driving signal lines 11 and a scanning line driving circuit 4 driving scanning lines 12. The drain terminal of a pixel TFT 1 is connected to the signal line 11, whereas the source terminal is connected to a first auxiliary capacitor C1 that is also connected to an auxiliary capacitor line L1. A second auxiliary capacitor C2 is connected to the path between the source terminal of the pixel TFT 1 and the first auxiliary capacitor C1 through a capacitor controlling TFT 6. When the driving frequency of the pixel TFT 1 becomes a specified value or less, the capacitor controlling TFT 6 turns on and electric charge will be stored in the second auxiliary capacitor 2 in accordance with the signal line voltage. This prevents fluctuation of the voltage of a pixel electrode 5 when the charge stored in the first auxiliary capacitor C1 is discharged and results in the improvement of the display quality.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、信号線および走査
線の各交点付近に配設されたスイッチング素子を介して
補助容量に電荷を蓄積する表示装置および液晶表示装置
に関する。
[0001] 1. Field of the Invention [0002] The present invention relates to a display device and a liquid crystal display device which accumulate charges in an auxiliary capacitor via switching elements disposed near intersections of signal lines and scanning lines.

【0002】[0002]

【従来の技術】液晶表示装置は、信号線および走査線が
列設されたアレイ基板と、このアレイ基板に液晶材料を
挟んで対向配置される対向基板とを備えている。アレイ
基板内の信号線11および走査線12の各交点付近に
は、図5に示すように画素TFT1(Thin Film Transis
tor)が配設されている。画素TFT1のゲート端子は走
査線12に接続され、ドレイン端子は信号線11に接続
され、ソース端子と補助容量線L1との間には補助容量
C1が接続されている。
2. Description of the Related Art A liquid crystal display device includes an array substrate on which signal lines and scanning lines are arranged, and an opposing substrate which is disposed opposite to the array substrate with a liquid crystal material interposed therebetween. As shown in FIG. 5, a pixel TFT 1 (Thin Film Transistor) is provided near each intersection of the signal line 11 and the scanning line 12 in the array substrate.
tor) is provided. The gate terminal of the pixel TFT 1 is connected to the scanning line 12, the drain terminal is connected to the signal line 11, and the storage capacitor C1 is connected between the source terminal and the storage capacitor line L1.

【0003】画素TFT1はそれぞれ予め定めた所定の
周波数で順に駆動され、画素TFT1がオンすると、信
号線電圧に応じた電荷が補助容量C1に蓄積され、蓄積
された電荷量に応じて液晶の輝度が変化する。
Each of the pixel TFTs 1 is sequentially driven at a predetermined frequency. When the pixel TFT 1 is turned on, an electric charge corresponding to the signal line voltage is accumulated in the auxiliary capacitor C1, and the luminance of the liquid crystal is adjusted according to the accumulated electric charge. Changes.

【0004】[0004]

【発明が解決しようとする課題】通常、画素TFT1
は、60Hz程度の周波数で駆動されるが、いったん画素
TFT1を駆動すると、次に同じ画素TFT1を駆動す
るまでの間、補助容量C1に蓄積された電荷により画素
表示を行うことになる。
Generally, the pixel TFT 1
Is driven at a frequency of about 60 Hz. However, once the pixel TFT 1 is driven, pixel display is performed by the electric charge accumulated in the auxiliary capacitor C1 until the next pixel TFT 1 is driven.

【0005】ところが、補助容量C1に蓄積された電荷
は、徐々に放電するため、駆動周波数を遅くするほど、
補助容量C1と画素電極との接続経路の電圧が低くな
り、色のにじみ等が起こって表示品質が悪くなってしま
う。
However, since the electric charge accumulated in the auxiliary capacitance C1 is gradually discharged, the lower the driving frequency is, the more the electric charge is accumulated.
The voltage of the connection path between the storage capacitor C1 and the pixel electrode is reduced, and color bleeding or the like occurs, thereby deteriorating the display quality.

【0006】一方、表示品質を向上させる目的で画素T
FT1の駆動周波数を高くすると、消費電力が増えると
いう問題がある。携帯電話等のモバイル環境で使用され
る電子機器の場合、バッテリ駆動時間をできるだけ長く
する必要があるため、液晶表示装置で消費する電力もで
きるだけ少ない方が望ましい。
On the other hand, in order to improve the display quality, the pixels T
When the driving frequency of the FT1 is increased, there is a problem that power consumption increases. In the case of an electronic device used in a mobile environment such as a mobile phone, it is necessary to extend the battery drive time as much as possible.

【0007】画素TFT1の駆動周波数を低くした場合
の表示品質の低下を抑制する一手法として、各画素ごと
に画素情報を記憶するSRAMを設ける手法が提案されてい
る。このようなSRAMを設ければ、補助容量C1の蓄積電
荷が放電してしまっても、SRAMから画素情報を継続して
読み出せるため、表示品質の低下は起きないが、SRAMを
構成するトランジスタが余計に必要になるため小型化が
困難になるとともに製造時の歩留まりが悪くなる。ま
た、SRAMでは階調表示を実現するのが難しいという問題
がある。
[0007] As a method of suppressing a decrease in display quality when the driving frequency of the pixel TFT 1 is reduced, a method of providing an SRAM for storing pixel information for each pixel has been proposed. If such an SRAM is provided, even if the storage charge of the auxiliary capacitor C1 is discharged, the pixel information can be continuously read from the SRAM, so that the display quality does not deteriorate. Since it becomes unnecessary, miniaturization becomes difficult, and the yield at the time of manufacturing deteriorates. In addition, there is a problem that it is difficult to realize gradation display in the SRAM.

【0008】本発明は、このような点に鑑みてなされた
ものであり、その目的は、構造を複雑にすることなく、
表示品質を向上できて低消費電力化も可能な表示装置お
よび液晶表示装置を提供することにある。
[0008] The present invention has been made in view of such a point, and its object is to make the structure without complicating the structure.
An object of the present invention is to provide a display device and a liquid crystal display device that can improve display quality and reduce power consumption.

【0009】[0009]

【課題を解決するための手段】上述した課題を解決する
ために、本発明は、信号線および走査線の各交点付近に
それぞれ配設される複数のスイッチング素子を備えた表
示装置において、前記スイッチング素子を通る電流経路
上に接続され、信号線電圧に応じた電荷を蓄積する第1
および第2のキャパシタ素子と、前記第1および第2キ
ャパシタの各一端の間の前記電流経路を遮断するか否か
を切り替える切替回路と、を備えている。
In order to solve the above-mentioned problems, the present invention relates to a display device having a plurality of switching elements disposed near each intersection of a signal line and a scanning line. A first circuit that is connected on a current path passing through the element and stores a charge corresponding to a signal line voltage;
And a second capacitor element, and a switching circuit for switching whether or not to interrupt the current path between each end of the first and second capacitors.

【0010】本発明では、通常の補助容量である第1の
キャパシタ素子の他に、大容量の第2キャパシタ素子を
設けるため、第1のキャパシタ素子が放電してしまって
も、第1のキャパシタ素子の一端の電圧低下を抑制で
き、表示品質の向上が図れる。
In the present invention, a large-capacity second capacitor element is provided in addition to the first capacitor element which is a normal auxiliary capacitor. Therefore, even if the first capacitor element is discharged, the first capacitor element is discharged. Voltage drop at one end of the device can be suppressed, and display quality can be improved.

【0011】また、信号線および走査線の各交点付近に
それぞれ配設される複数のスイッチング素子を有するア
レイ基板と、このアレイ基板に液晶材料を挟んで対向配
置される対向基板と、を備えた液晶表示装置において、
前記アレイ基板は、前記スイッチング素子を通る電流経
路上に接続され、信号線電圧に応じた電荷を蓄積する第
1および第2のキャパシタ素子と、前記スイッチング素
子の駆動周波数が所定の周波数より高い場合には前記第
1および第2のキャパシタ素子の各一端の間の前記電流
経路を遮断し、該駆動周波数が前記所定の周波数以下の
場合には前記第1および第2のキャパシタ素子の各一端
の間の前記電流経路を導通させる切替回路と、を備えて
いる。
An array substrate having a plurality of switching elements disposed near each intersection of a signal line and a scanning line, and a counter substrate disposed to face the array substrate with a liquid crystal material interposed therebetween are provided. In a liquid crystal display device,
The array substrate is connected on a current path passing through the switching element, and stores first and second capacitor elements that accumulate charges according to a signal line voltage, and a case where a driving frequency of the switching element is higher than a predetermined frequency. Interrupts the current path between one ends of the first and second capacitor elements, and when the drive frequency is equal to or lower than the predetermined frequency, the current path is connected to one end of each of the first and second capacitor elements. And a switching circuit for conducting the current path therebetween.

【0012】[0012]

【発明の実施の形態】以下、本発明に係る表示装置につ
いて、図面を参照しながら具体的に説明する。以下で
は、表示装置の一例としてポリシリコン型の液晶表示装
置について説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a display device according to the present invention will be specifically described with reference to the drawings. Hereinafter, a polysilicon liquid crystal display device will be described as an example of the display device.

【0013】図1は液晶表示装置を構成するアレイ基板
内の画素TFT周辺の回路構成を示す図、図2は液晶表
示装置の全体構成を示すブロック図である。図1に示す
ように、本実施形態の液晶表示装置は、信号線11およ
び走査線12が列設され信号線11および走査線12の
交点付近に画素TFT(スイッチング素子)1が配設さ
れた画素アレイ部2と、信号線11を駆動する信号線駆
動回路3と、走査線12を駆動する走査線駆動回路4と
を備えている。画素TFT1のドレイン端子には信号線
11が接続され、ソース端子と補助容量線L1との間に
は第1の補助容量(第1のキャパシタ素子)C1が接続
されている。この第1の補助容量C1は、従来の補助容
量Csと同様の容量値をもつ。
FIG. 1 is a diagram showing a circuit configuration around a pixel TFT in an array substrate constituting a liquid crystal display device, and FIG. 2 is a block diagram showing an entire configuration of the liquid crystal display device. As shown in FIG. 1, in the liquid crystal display device of the present embodiment, a signal line 11 and a scanning line 12 are arranged in a row, and a pixel TFT (switching element) 1 is arranged near an intersection of the signal line 11 and the scanning line 12. It includes a pixel array unit 2, a signal line driving circuit 3 for driving a signal line 11, and a scanning line driving circuit 4 for driving a scanning line 12. A signal line 11 is connected to the drain terminal of the pixel TFT1, and a first auxiliary capacitance (first capacitor element) C1 is connected between the source terminal and the auxiliary capacitance line L1. The first auxiliary capacitance C1 has the same capacitance value as the conventional auxiliary capacitance Cs.

【0014】図1中の画素アレイ部2、信号線駆動回路
3および走査線駆動回路4はいずれも、ガラス基板上に
ポリシリコンを材料とするTFTで形成される。
Each of the pixel array section 2, the signal line driving circuit 3 and the scanning line driving circuit 4 in FIG. 1 is formed on a glass substrate by a TFT made of polysilicon.

【0015】本実施形態は、画素TFT1のソース端子
と第1の補助容量C1との接続経路(画素電極5との接
続経路)に、容量制御TFT6を介して第2の補助容量
(第2のキャパシタ素子)C2を接続する点に特徴があ
る。第1の補助容量C1は従来の補助容量と同程度の容
量をもつのに対し、第2の補助容量C2は第1の補助容
量C1よりも大きい容量をもつ。
In the present embodiment, a second storage capacitor (second connection) is connected to the connection path (connection path to the pixel electrode 5) between the source terminal of the pixel TFT 1 and the first storage capacitor C1 via the capacitance control TFT 6. It is characterized in that the capacitor element C2 is connected. The first storage capacitor C1 has a capacity similar to that of a conventional storage capacitor, while the second storage capacitor C2 has a larger capacity than the first storage capacitor C1.

【0016】容量制御TFT6のゲート端子は、容量制
御線(切替回路)L2に接続されている。この容量制御
線L2には、例えば不図示のホスト装置からの信号が供
給される。あるいは、容量制御TFT6を制御する信号
をアレイ基板内で生成してもよい。
The gate terminal of the capacitance control TFT 6 is connected to a capacitance control line (switching circuit) L2. A signal from, for example, a host device (not shown) is supplied to the capacitance control line L2. Alternatively, a signal for controlling the capacitance control TFT 6 may be generated in the array substrate.

【0017】容量制御線L2の論理により、容量制御T
FT6は、画素TFT1の駆動周波数が所定の周波数
(例えば、60Hz)以下の場合のみ、オンするように制
御される。
According to the logic of the capacitance control line L2, the capacitance control T
The FT 6 is controlled to be turned on only when the driving frequency of the pixel TFT 1 is equal to or lower than a predetermined frequency (for example, 60 Hz).

【0018】容量制御TFT6がオフの間、すなわち画
素TFT1の駆動周波数が所定の周波数を超えるとき
は、第1の補助容量C1のみに信号線電圧に応じた電荷
が蓄積される。また、容量制御TFT6がオンの間、す
なわち画素TFT1の駆動周波数が所定の周波数以下の
ときは、第1および第2の補助容量C1,C2に信号線
電圧に応じた電荷が蓄積される。
When the capacitance control TFT 6 is off, that is, when the driving frequency of the pixel TFT 1 exceeds a predetermined frequency, charges corresponding to the signal line voltage are accumulated only in the first auxiliary capacitance C1. Further, while the capacitance control TFT 6 is on, that is, when the drive frequency of the pixel TFT 1 is equal to or lower than a predetermined frequency, electric charges corresponding to the signal line voltage are accumulated in the first and second auxiliary capacitances C1 and C2.

【0019】第2の補助容量C2は、第1の補助容量C
1よりも容量値が大きいため、画素TFT1の駆動周波
数が遅くても、次に同じ画素TFT1を駆動するまでの
間に第2の補助容量C2に蓄積された電荷が放電しきっ
てしまうおそれはない。したがって、画素電極5の電圧
が変動しなくなり、表示品質の向上が図れる。
The second auxiliary capacitance C2 is equal to the first auxiliary capacitance C2.
Since the capacitance value is larger than 1, even if the driving frequency of the pixel TFT 1 is slow, there is no possibility that the electric charge accumulated in the second auxiliary capacitance C2 is completely discharged until the same pixel TFT 1 is driven next time. . Therefore, the voltage of the pixel electrode 5 does not fluctuate, and the display quality can be improved.

【0020】図3は本実施形態のアレイ基板の平面レイ
アウト図である。図3の太実線で囲まれた部分が一画素
分の領域10を示している。この領域10の図示左右方
向境界位置には信号線11が配設され、図示上下方向に
は補助容量線L1が配設されている。
FIG. 3 is a plan layout view of the array substrate of the present embodiment. A portion surrounded by a thick solid line in FIG. 3 indicates the region 10 for one pixel. A signal line 11 is provided at a boundary position of the region 10 in the left-right direction in the figure, and an auxiliary capacitance line L1 is provided in a vertical direction in the figure.

【0021】一画素領域内の画素TFT1のゲート端子
は走査線12に接続され、ドレイン端子は信号線11に
接続され、ソース端子は第1の補助容量C1の一端と容
量制御TFT6のドレイン端子に接続されるとともに、
コンタクトホール(C/H)13を介して画素電極5に
接続されている。
The gate terminal of the pixel TFT 1 in one pixel region is connected to the scanning line 12, the drain terminal is connected to the signal line 11, and the source terminal is connected to one end of the first auxiliary capacitance C 1 and the drain terminal of the capacitance control TFT 6. Connected,
It is connected to the pixel electrode 5 via a contact hole (C / H) 13.

【0022】容量制御TFT6のソース端子は、第2の
補助容量C2の一端に接続されている。第1および第2
の補助容量C1,C2の他端はいずれも補助容量線L1
に接続されている。
The source terminal of the capacitance control TFT 6 is connected to one end of the second auxiliary capacitance C2. First and second
The other ends of the auxiliary capacitances C1 and C2 are connected to the auxiliary capacitance line L1.
It is connected to the.

【0023】一方、図4は容量制御TFTと第2の補助
容量を持たない従来のアレイ基板の平面レイアウト図で
ある。従来のアレイ基板の場合、一画素領域内の走査線
12よりも下側のほとんどの領域には画素電極5が配置
されている。本実施形態は、従来画素電極5を配置して
いた領域の一部を利用して容量制御TFT6と第2の補
助容量C2を形成するため、一画素領域のサイズを変更
しなくても、従来と同様の表示解像度が得られる。ま
た、画素TFT1や第1の補助容量C1等は従来と同様
に構成されるため、従来と同様の製造プロセス技術を適
用できる。
FIG. 4 is a plan layout diagram of a conventional array substrate having no capacitance control TFT and no second auxiliary capacitance. In the case of a conventional array substrate, the pixel electrodes 5 are arranged in almost all areas below the scanning lines 12 in one pixel area. In the present embodiment, since the capacitance control TFT 6 and the second auxiliary capacitance C2 are formed by using a part of the area where the pixel electrode 5 is conventionally arranged, the conventional technique can be used without changing the size of one pixel area. The same display resolution as described above can be obtained. Further, since the pixel TFT 1 and the first storage capacitor C1 are configured in the same manner as in the related art, the same manufacturing process technology as in the related art can be applied.

【0024】このように、本実施形態では、従来と同構
造の第1の補助容量C1の他に、大容量の第2の補助容
量C2を設け、画素TFT1の駆動周波数が所定周波数
以下になると、容量制御TFT6をオンして信号線電圧
に応じた電荷を第2の補助容量C2にも蓄積するように
したため、第1の補助容量C1に蓄積された電荷が放電
してしまっても、画素電極5の電圧が変動しなくなり、
表示品質の向上が図れる。
As described above, in this embodiment, in addition to the first auxiliary capacitor C1 having the same structure as the conventional one, the second auxiliary capacitor C2 having a large capacity is provided, and when the driving frequency of the pixel TFT 1 becomes lower than the predetermined frequency. Since the capacitance control TFT 6 is turned on to accumulate the electric charge corresponding to the signal line voltage also in the second auxiliary capacitance C2, even if the electric charge stored in the first auxiliary capacitance C1 is discharged, the pixel is not charged. The voltage of the electrode 5 stops fluctuating,
The display quality can be improved.

【0025】また、第2の補助容量C2は、従来画素電
極5を形成していた領域に形成されるため、一画素分の
領域は従来と変わりがなく、従来と同様の製造プロセス
で製造可能である。
Further, since the second auxiliary capacitance C2 is formed in the region where the pixel electrode 5 is conventionally formed, the region for one pixel is the same as the conventional one and can be manufactured by the same manufacturing process as the conventional one. It is.

【0026】さらに、補助容量の電荷放電を補うために
一画素領域内にSRAMを設ける方式と比較すると、一画素
領域の構造を大幅に簡略化できるため、表示解像度を高
くすることができるとともに、SRAMでは技術的に困難な
多階調表示も容易に実現できる。また、SRAMを用いるよ
りも、さらに消費電力を低減できる。
Further, as compared with a method in which an SRAM is provided in one pixel region to supplement the discharge of electric charge of the storage capacitor, the structure of one pixel region can be greatly simplified, so that the display resolution can be increased and SRAM can easily realize multi-gradation display which is technically difficult. Further, power consumption can be further reduced as compared with using an SRAM.

【0027】上述した実施形態において、第2の補助容
量C2のサイズや形成場所は図3に示した例に限定され
ない。また、上述した実施形態では、ガラス基板上にポ
リシリコン型のTFTを形成する例を説明したが、本発
明は他のプロセスで形成したTFT(例えば、アモルフ
ァスシリコン型のTFT)にも同様に適用可能である。
In the above-described embodiment, the size and location of the second storage capacitor C2 are not limited to the example shown in FIG. In the above-described embodiment, an example in which a polysilicon TFT is formed on a glass substrate has been described. However, the present invention is similarly applied to a TFT formed by another process (for example, an amorphous silicon TFT). It is possible.

【0028】[0028]

【発明の効果】以上詳細に説明したように、本発明によ
れば、通常の補助容量である第1のキャパシタ素子の他
に、第2のキャパシタ素子を設けるため、スイッチング
素子の駆動周波数が低くて第1のキャパシタ素子が放電
してしまっても、第1のキャパシタ素子の一端の電圧が
低下しなくなり、表示品質を向上できる。
As described above in detail, according to the present invention, since the second capacitor element is provided in addition to the first capacitor element which is a normal auxiliary capacitance, the driving frequency of the switching element is low. Therefore, even if the first capacitor element is discharged, the voltage at one end of the first capacitor element does not decrease, and the display quality can be improved.

【0029】また、本発明は、一画素領域内にSRAMを設
けて第1のキャパシタ素子の電荷放電を補う場合に比べ
て、構造を簡略化できるため、その分表示解像度を高く
できるとともに、消費電力も低減できる。また、SRAMで
は技術的に困難であった多階調表示も容易に実現でき
る。
Further, according to the present invention, the structure can be simplified as compared with the case where an SRAM is provided in one pixel region to compensate for the electric discharge of the first capacitor element. Electric power can also be reduced. Also, multi-gradation display, which was technically difficult with SRAM, can be easily realized.

【図面の簡単な説明】[Brief description of the drawings]

【図1】液晶表示装置を構成するアレイ基板内の画素T
FT周辺の回路構成を示す図。
FIG. 1 shows a pixel T in an array substrate constituting a liquid crystal display device
FIG. 3 is a diagram illustrating a circuit configuration around an FT.

【図2】液晶表示装置の全体構成を示すブロック図。FIG. 2 is a block diagram illustrating an overall configuration of a liquid crystal display device.

【図3】本実施形態のアレイ基板の平面レイアウト図。FIG. 3 is a plan layout view of the array substrate of the embodiment.

【図4】容量制御TFTと第2の補助容量を持たない従
来のアレイ基板の平面レイアウト図。
FIG. 4 is a plan layout view of a conventional array substrate without a capacitance control TFT and a second auxiliary capacitance.

【図5】従来の液晶表示装置の画素TFT周辺の回路構
成を示す図。
FIG. 5 is a diagram showing a circuit configuration around a pixel TFT of a conventional liquid crystal display device.

【符号の説明】[Explanation of symbols]

1 画素TFT 2 画素アレイ部 3 信号線駆動回路 4 走査線駆動回路 5 画素電極 6 容量制御TFT 11 信号線 12 走査線 L1 補助容量線 L2 容量制御線 Reference Signs List 1 pixel TFT 2 pixel array section 3 signal line drive circuit 4 scan line drive circuit 5 pixel electrode 6 capacity control TFT 11 signal line 12 scan line L1 auxiliary capacity line L2 capacity control line

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 29/786 H01L 29/78 612Z 21/336 614 Fターム(参考) 2H092 GA12 JA24 JB42 JB62 JB67 JB69 NA01 NA26 2H093 NA16 NA51 NC34 NC35 NC40 NC90 ND06 ND39 ND60 NH16 5C006 AC25 AF51 BB16 BC02 BC03 BC06 FA18 FA26 FA36 FA47 FA54 FA56 5C080 AA10 BB05 DD01 DD26 FF12 JJ02 JJ03 JJ06 5F110 AA09 AA30 BB01 DD02 GG02 GG13 GG15 NN72 NN73 ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI theme coat ゛ (Reference) H01L 29/786 H01L 29/78 612Z 21/336 614 F Term (Reference) 2H092 GA12 JA24 JB42 JB62 JB67 JB69 NA01 NA26 2H093 NA16 NA51 NC34 NC35 NC40 NC90 ND06 ND39 ND60 NH16 5C006 AC25 AF51 BB16 BC02 BC03 BC06 FA18 FA26 FA36 FA47 FA54 FA56 5C080 AA10 BB05 DD01 DD26 FF12 JJ02 JJ03 JJ06 5F110 AA09 AA30 BB01 DD02 GG02 NN02

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】信号線および走査線の各交点付近にそれぞ
れ配設される複数のスイッチング素子を備えた表示装置
において、 前記スイッチング素子を通る電流経路上に接続され、信
号線電圧に応じた電荷を蓄積する第1および第2のキャ
パシタ素子と、 前記第1および第2のキャパシタの各一端の間の前記電
流経路を遮断するか否かを切り替える切替回路と、を備
えることを特徴とする表示装置。
1. A display device comprising a plurality of switching elements provided near each intersection of a signal line and a scanning line, wherein the charge is connected to a current path passing through the switching element and corresponds to a signal line voltage. And a switching circuit for switching whether or not to interrupt the current path between each end of each of the first and second capacitors. apparatus.
【請求項2】前記切替回路は、前記スイッチング素子の
駆動周波数が所定の周波数以下の場合のみオンして、前
記信号線の電圧に応じた電荷を対応する前記第2のキャ
パシタ素子に蓄積することを特徴とする請求項1に記載
の表示装置。
2. The switching circuit according to claim 1, wherein the switching circuit is turned on only when a driving frequency of the switching element is equal to or lower than a predetermined frequency, and stores a charge corresponding to a voltage of the signal line in the corresponding second capacitor element. The display device according to claim 1, wherein:
【請求項3】信号線および走査線の各交点付近にそれぞ
れ配設される複数のスイッチング素子を有するアレイ基
板と、このアレイ基板に液晶材料を挟んで対向配置され
る対向基板と、を備えた液晶表示装置において、 前記アレイ基板は、 前記スイッチング素子を通る電流経路上に接続され、信
号線電圧に応じた電荷を蓄積する第1および第2のキャ
パシタ素子と、 前記スイッチング素子の駆動周波数が所定の周波数より
高い場合には前記第1および第2のキャパシタ素子の各
一端の間の前記電流経路を遮断し、該駆動周波数が前記
所定の周波数以下の場合には前記第1および第2のキャ
パシタ素子の各一端の間の前記電流経路を導通させる切
替回路と、を備えることを特徴とする液晶表示装置。
3. An array substrate having a plurality of switching elements disposed near each intersection of a signal line and a scanning line, and a counter substrate disposed to face the array substrate with a liquid crystal material interposed therebetween. In the liquid crystal display device, the array substrate is connected on a current path passing through the switching element, and first and second capacitor elements that accumulate charges according to a signal line voltage; and a driving frequency of the switching element is predetermined. When the driving frequency is lower than the predetermined frequency, the current path between one ends of the first and second capacitor elements is cut off. A switching circuit for conducting the current path between one ends of the elements.
JP2001094911A 2001-03-29 2001-03-29 Display device and liquid crystal display device Withdrawn JP2002296617A (en)

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Application Number Priority Date Filing Date Title
JP2001094911A JP2002296617A (en) 2001-03-29 2001-03-29 Display device and liquid crystal display device

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Publication Number Publication Date
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Family

ID=18949041

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Country Link
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1318908C (en) * 2004-08-18 2007-05-30 友达光电股份有限公司 Thin film transistor array
US7839371B2 (en) 2006-06-26 2010-11-23 Samsung Electronics Co., Ltd. Liquid crystal display device, method of driving the same, and method of manufacturing the same
CN102736290A (en) * 2011-04-14 2012-10-17 京东方科技集团股份有限公司 Field scanning method, pixel structure, array substrate and display device
KR101435527B1 (en) 2007-07-25 2014-08-29 삼성디스플레이 주식회사 Display device
CN105654892A (en) * 2016-04-13 2016-06-08 京东方科技集团股份有限公司 Pixel structure and driving method thereof as well as display panel

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1318908C (en) * 2004-08-18 2007-05-30 友达光电股份有限公司 Thin film transistor array
US7839371B2 (en) 2006-06-26 2010-11-23 Samsung Electronics Co., Ltd. Liquid crystal display device, method of driving the same, and method of manufacturing the same
KR101435527B1 (en) 2007-07-25 2014-08-29 삼성디스플레이 주식회사 Display device
US8952877B2 (en) 2007-07-25 2015-02-10 Samsung Display Co., Ltd. Display device and driving method thereof
US9529237B2 (en) 2007-07-25 2016-12-27 Samsung Display Co., Ltd. Display device and driving method thereof
US9905191B2 (en) 2007-07-25 2018-02-27 Samsung Display Co., Ltd. Display device and driving method thereof
US10217434B2 (en) 2007-07-25 2019-02-26 Samsung Display Co., Ltd. Display device and driving method thereof
CN102736290A (en) * 2011-04-14 2012-10-17 京东方科技集团股份有限公司 Field scanning method, pixel structure, array substrate and display device
CN105654892A (en) * 2016-04-13 2016-06-08 京东方科技集团股份有限公司 Pixel structure and driving method thereof as well as display panel

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