JP2002246380A - Thin-film manufacturing equipment and thin-film manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To control the start and end of formation of a thin film clearly by preventing the infiltration of a material gas, in a catalyst CVD method. SOLUTION: In this thin-film manufacturing equipment, a material gas 6 is decomposed by contact with a permeable catalyst 5 and is deposited on the surface of a substrate 3, thereby forming the film. A gas 82 is injected from a gas injection hole 8, so as to form an airflow barrier 9 of the gas 82 between a circumferential edge part of the substrate 3 and a shutter 4, arranged to confront the surface of the substrate 3.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for producing thin films such as semiconductors, insulators, and conductors.
The present invention relates to a thin film forming apparatus called a method D and a thin film manufacturing method.

[0002]

2. Description of the Related Art CVD (Chemical Vapor Deposition) is a film forming method for forming a thin film of an insulator such as ceramics composed of oxides or nitrides of semiconductors and metals, and a conductor such as metals mainly composed of silicon. Widely used. CVD is
The source gas is decomposed by the added energy, or the precursor thereof is used as a seed to deposit on the substrate to form a film, which is why it is called CVD.

[0003] CVD can be divided into many types. For example, it is called LP (low pressure) CVD, OM (MO, organometallic) CVD, plasma CVD, laser CVD or the like, and is practically used depending on the purpose. . LPCVD is a method relating to the pressure of the atmosphere at the time of film formation, and OMCVD is a method relating to the raw material. Plasma CVD and laser light CVD are methods relating to the type of heat energy added to the raw material gas.

[0004] CVD utilizing the former thermal decomposition and thermal dissociation
In such a case, for example, the substrate temperature rises due to heat diffusion or heat radiation from a heat source, or the substrate temperature has to be raised in order to cause a thermal decomposition reaction to the raw material gas even in LPCVD.

For this reason, for example, it has not been possible to form a film on a base made of a material having a low melting point such as a film formed on an Al wiring pattern. Therefore, recently, in order to lower the substrate temperature, plasma CVD or laser CVD is performed.
Etc. have been proposed and used extensively.

However, plasma CVD is a method of forming a film by exciting and decomposing a raw material gas using plasma by glow discharge, and the formed thin film itself is damaged by the plasma. In particular, in an application in which thin films are stacked, the interface of each film is damaged by plasma. In the case of laser CVD, a thin film is also deposited on a window through which laser light is introduced into the chamber, so that the light transmittance to the substrate is reduced during the film formation process. As a method for solving such a problem, catalytic CVD has attracted attention.

FIG. 7 is a cutaway perspective view schematically showing a catalytic CVD apparatus.

In the catalytic CVD apparatus 10, the substrate 3
For example, it is mechanically supported by the substrate supporting unit 2 by a locking claw or the like. The substrate support 2 is carried through the substrate transfer unit 21 into the chamber 1 in which the pressure is reduced by an exhaust pipe 11 connected to an exhaust system (not shown). Then, the substrate supporting section 2 comes into contact with the temperature control section 22 whose temperature is controlled, so that the temperature of the supporting substrate 3 can be adjusted. In this case, the substrate 3 is mounted with its surface facing downward.

At the bottom of the chamber 1, for example, a source gas supply pipe 7 having a plurality of source gas discharge holes 71 connected thereto is disposed. The source gas 6 is supplied to the source gas supply pipe 7 from outside the chamber 1, and is discharged into the chamber 1 from the source gas discharge holes 71.

Source gas discharge hole 7 from which source gas 6 is released
At an intermediate portion between the substrate 1 and the substrate 3, a catalyst 5 is disposed so as to pass through the chamber 1. The catalyst body 5 is made of a material having a high melting point, such as W, Pt, Pd, Ti, Ta, Ni, or Cr, and has a catalytic action to cause a thermal decomposition / thermal dissociation reaction with the raw material gas 6. . In addition, for example, the catalyst material is knitted in a grid or mesh shape in the form of a wire or a filament so that the source gas 6 can be passed and the contact area with the source gas 6 is increased.
It is constituted by providing various shapes of pores and slits on a flat plate of a catalyst material.

Although not shown, power is supplied to the catalyst body 5 from the outside of the chamber 1, and depending on the type of the raw material gas 6, for example, 500 ° C. to 200 ° C. by Joule heat.
It can be heated to a high temperature such as 0 ° C. The raw material gas 6 comes into contact with the heated catalyst 5, and the catalytic action of the catalyst 5 causes thermal dissociation of the raw material gas 6 to generate active species, which are deposited on the surface of the substrate 3 to form a film. . This is why it is called catalytic CVD or hot wire CVD.

As described above, in the film formation by the catalytic CVD,
The film formed on the surface of the substrate 3 is not damaged by the plasma. Further, instead of causing the thermal decomposition of the raw material gas 6 on the surface of the substrate 3 heated to a high temperature, the temperature rise of the substrate 3 due to the radiant heat from the catalyst body 5 heated to a high temperature is caused, for example, by the temperature control unit 22. By allowing temperature control for both hot and cold use, it can be kept moderate.
Therefore, there are few restrictions on application due to the temperature rise of the substrate 3.

Therefore, catalytic CVD can be said to be an excellent film forming method for solving the problems of other CVD such as plasma CVD.

[0014]

By the way, catalytic CVD
In this embodiment, the shutter 4 is used to start and end the film formation. The shutter 4 shields the surface of the substrate 3 from the source gas 6 in the vicinity of the surface of the substrate 3 by a shutter driving unit 41,
The operation is performed such that the surface of the substrate 3 is exposed to the source gas 6. That is, in the conventional catalytic CVD apparatus 10, the start of film formation is performed by opening the shutter 4, and the end of film formation is performed by closing the shutter 4.

FIG. 8 is a schematic side sectional view of a catalytic CVD apparatus immediately before the start of film formation.

In the chamber 1 of the catalytic CVD apparatus 10,
The pressure is reduced to a predetermined pressure by the exhaust from the exhaust pipe 11. The substrate 3 is supported by the substrate support unit 2 and the temperature control unit 2
2 and is temperature controlled. The shutter 4 shields the substrate 3 in the closed state. The catalyst 5 is heated to a predetermined temperature.

FIG. 9 is a schematic side sectional view of a catalytic CVD apparatus during film formation.

At the start of film formation, a shutter (not shown) is opened, and the source gas 6 released from the source gas discharge hole 71 is rapidly released into the depressurized chamber 1 and The gas flows upward of the chamber 1 due to the pressure gradient generated by the exhaust of the exhaust pipe 11 that is open in the vicinity of 3. The flow of the raw material gas 6 is aerated while in contact with the catalyst 5 heated to a predetermined temperature provided in the middle part of the chamber 1 to cause a thermal decomposition reaction. Then, it arrives at the surface of the substrate 3 and is deposited.

The thermally decomposed raw material gas 6 is plasma CVD
Does not move anisotropically in an electric field like
Performs isotropic molecular motion accompanied by thermal motion. Therefore, some of the source gas 6 is deposited not only on the substrate 3 but also on the wall surface of the chamber 1 and is sucked into the exhaust pipe 11, but most of the source gas 6 flows in the direction of the substrate 3 according to the pressure gradient.

FIG. 10 is a schematic side sectional view of the catalytic CVD apparatus immediately after the completion of film formation.

At the end of film formation, the substrate support 2 is separated from the temperature controller 22 and the shutter 4 is closed. The substrate 3 is shielded by the shutter 4 and does not directly face the source gas 6.

However, the raw material gas 6 has a strong isotropic molecular motion. Therefore, it is inevitable that the source gas 6 enters the gap between the substrate 3 and the shutter 4.
As a result, the film formation in the catalytic CVD is started before the shutter 4 is opened, and is not completely finished even if the shutter 4 is closed. That is, the start / end of the film formation is determined by the shutter 4
No sharp response is taken in synchronization with the opening and closing of the shutter 3. In particular, at the peripheral portion of the substrate 3, film formation starts with a slow rise before the shutter 4 is opened, and the film formation is slow after the shutter 4 is closed. The film formation ends at the fall.

The behavior of the film formation in the catalytic CVD is experimentally proved that the gap between the substrate 3 and the shutter 4 is 3 cm, even after the shutter 4 is closed.
10Å / min sedimentation was observed at the periphery of.

In this way, the uniformity of the film thickness formed at the central portion and the peripheral portion of the substrate 3 is impaired, and the effectiveness of catalytic CVD, which is effective in forming an extremely thin film on the order, is reduced. There was a problem that was done.

Accordingly, the present invention provides a thin film manufacturing apparatus and a thin film manufacturing method in which the substrate surface is completely shielded from the source gas immediately before opening and immediately after closing of the shutter so that the progress of film formation can be reliably started and terminated. It is intended to be.

[0026]

According to the first aspect of the present invention, there is provided a thin film formed by decomposing a raw material gas upon contact with a gas-permeable catalyst and depositing the raw material gas on a surface of a substrate. A manufacturing apparatus, having a gas injection hole, wherein the gas injection hole is for injecting gas, and a shutter provided to be openable and closable in opposition to a peripheral portion of the substrate and a surface of the substrate; The problem can be solved by a thin film manufacturing apparatus configured to form a tubular or conical airflow barrier between the thin film forming apparatuses.

That is, in catalytic CVD, the molecular flow of the raw material gas is supplied with thermal energy by contacting the heated catalyst body, and isotropic thermal motion is also energized, thereby closing the substrate with the substrate. To the gap with the shutter.

However, according to the present invention, the gas is injected from the gas injection holes to provide an airflow barrier so that the source gas does not flow into the gap between the substrate and the shutter. That is, in the catalytic CVD, the source gas is not anisotropically accelerated by an electric field such as plasma CVD, so that the so-called gas flow barrier formed in the gap between the peripheral portion of the substrate and the shutter causes a so-called gas flow barrier. It can be sufficiently shielded by a cylindrical or conical air curtain.

Therefore, at the start and end of the film formation, if the gas injection from the gas injection holes is intermittently intermittently interlocked with the opening and closing of the shutter to intermittently form the air curtain, the film formation starts immediately. Then, the film formation can be completed immediately.

[0030] Next, in claim 2, the problem is solved by providing the gas injection holes at a peripheral portion of a temperature control section for controlling the temperature of the substrate via a substrate supporting section for supporting the substrate. it can.

That is, the gas injection holes are provided at the peripheral edge of the temperature control unit, and the gas injected from the gas injection holes surrounds the peripheral edge of the substrate by an airflow barrier formed in the gap between the substrate and the shutter. .

At this time, if the gas injected from the gas injection hole is directed in the vertical direction, it becomes a cylindrical airflow barrier formed so as to surround the peripheral portion of the substrate and the peripheral portion of the shutter. If the gas to be injected is directed toward the center of the substrate, it becomes an inverted pyramidal (wafer-shaped) airflow barrier with the substrate at the bottom, and can shield the substrate from the source gas.

In this way, if a so-called air curtain is formed in the gap between the substrate and the shutter, it is possible to effectively shield the source gas which is going to flow around by molecular motion, and start and end the film formation instantaneously. Can be.

Next, according to the third aspect, the problem is solved by providing the gas injection hole at a peripheral portion of the shutter.

That is, in order to form an airflow barrier in the gap between the substrate and the shutter, a plurality of gas injection holes are connected to the peripheral portion of the shutter, and gas is injected toward the peripheral portion of the substrate. .

In this way, if a so-called air curtain is formed in the gap between the substrate and the shutter, it is possible to effectively shield the source gas which is going to flow around by molecular motion.
The start and end of film formation can be performed instantaneously.

Next, in [Claim 4], the problem can be solved by that the gas stream is made of a gas that is non-reactive with the source gas.

That is, a gas that forms a cylindrical or conical airflow barrier so as to surround the periphery of the substrate, that is, the gas injected from the gas injection holes reacts with the source gas to form a film and a different product. It is necessary to prevent the occurrence of impurities and contaminants that contaminate the inside of the chamber.

Therefore, a gas that does not chemically react with the source gas is used as the gas that is injected from the gas injection holes to form a cylindrical or conical airflow barrier.

Next, in claim 5, a step of supporting the substrate on the substrate supporting portion, carrying the substrate into the chamber, and contacting the substrate supporting portion with the temperature control portion to control the temperature of the substrate. Closing the shutter at a position facing the substrate, forming a gas flow barrier by injecting gas from a gas injection hole between a peripheral portion of the substrate and the shutter, and placing the source gas in the chamber. Discharging and transporting the heated catalyst toward the substrate, stopping the gas injection and opening the shutter at the start of film formation, and closing the shutter at the end of the film formation. And forming the airflow barrier.

In other words, according to the present invention, in addition to the start and end of the film formation by the conventional opening and closing of the shutter, the periphery of the substrate and the periphery of the shutter facing the substrate are commonly called an air curtain. The gas is blocked by a cylindrical barrier caused by air flow, and the source gas that makes isotropic molecular motion goes around the gap between the substrate and the peripheral edge of the shutter. To ensure that there are no problems that continue.

Therefore, in the method of manufacturing a thin film according to the present invention, at the start of film formation, the step of stopping the injection of the gas injected from the gas injection holes and opening the shutter, and at the end of the film formation, Closing the shutter and forming a cylindrical or conical airflow barrier formed by the gas.

As described above, the thin film manufacturing apparatus and the thin film manufacturing method according to the present invention can sharply and clearly control the start and end points of the unclear film formation in the conventional catalytic CVD.

[0044]

FIG. 1 is a schematic partially cutaway perspective view of a first embodiment of the present invention, and FIG. 2 is a perspective view of a main part in the case of a circular substrate of the first embodiment. 3 is a side sectional view of a main part at the start and end of the film formation, FIG. 4 is a perspective view of the main part in the case of the rectangular substrate of the second embodiment, and FIG. 5 is a third embodiment of the present invention. FIG. 6 is a perspective view of the principal part in the case of the circular shutter of the third embodiment.

In the figure, 1 is a chamber, 2 is a substrate support, 3 is a substrate, 4 is a shutter, 5 is a catalyst, 6 is a source gas, 7 is a source gas supply pipe, 8 is a gas injection hole, and 9 is an air flow. Barrier, 10 is a catalytic CVD apparatus, 11 is an exhaust pipe, 21 is a substrate transfer section, 22 is a temperature control section, 41 is a shutter drive section, 7
1 is a source gas discharge hole, 81 is a gas introduction pipe, 82 is a gas,
9 is an airflow barrier. FIG. 1 shows a catalyst C according to the present invention.
The basic configuration of the VD apparatus 10 is not different from the conventional catalytic CVD shown in FIG. That is, the substrate 3 is carried by the substrate carrying unit 21 into the chamber 1 supported by the substrate supporting unit 2 by, for example, a locking claw, and reduced in pressure by the exhaust pipe 11 connected to an exhaust system (not shown). . Substrate 3
Can be adjusted via the substrate support 2 which is in contact with the temperature controller 22 whose temperature is controlled. In this case, the substrate 3 is mounted with the surface facing downward, but the surface of the substrate 3 may be supported upward or laterally depending on the purpose.

At the bottom of the chamber 1, for example, a source gas supply pipe 7 in which a plurality of source gas discharge holes 71 are connected is disposed. The source gas discharge holes 71 are not limited to the bottom of the chamber 1 in relation to the arrangement of the substrate 3 and the like. The source gas 6 is supplied to the source gas supply pipe 7 from outside the chamber 1 and can be discharged into the chamber 1 from the source gas discharge holes 71.

At the intermediate portion between the source gas supply pipe 7 and the substrate 3, a catalyst 5 is disposed so as to pass through the chamber 1. The position where the catalyst body 5 is arranged may be an intermediate part of the flow in which the raw material gas 6 moves in the direction of the substrate 3. Source gas 6
Is rapidly discharged because it is discharged into the decompressed chamber 1. However, the exhaust pipe 11 is arranged near the substrate 3 to form a pressure gradient in the direction from the source gas discharge holes 71 to the substrate 3,
The flow of the source gas 6 is directed from the source gas discharge holes 71 toward the substrate 3.

Depending on what kind of raw material gas 6 is used to form a film, the catalytic body 5 may have a catalytic action against the thermal decomposition of the raw material gas 6. If it is, various shapes can be adopted, and there is no fundamental difference from the case of the conventional catalytic CVD apparatus 10. Although not shown, electric power can be supplied to the catalyst body 5 from the outside of the chamber 1.
For example, it can be heated to a desired high temperature in the range of 500C to 2000C.

The gas injection hole 8 is adapted to introduce gas from outside the chamber 1 through a gas introduction pipe 81. The gas introduction pipe 81 is connected to a gas supply system (not shown) so that a predetermined amount of gas can be injected from the gas injection hole 8 into the chamber 1 at a predetermined time for a predetermined time.

The gas injection holes 8 can be arranged in various ways depending on the shape of the substrate 3. In FIG. 2, since the substrate 3 is circular, the gas injection holes 8 are also arranged so as to be continuously connected to the circumference. The gas 82 injected from the gas injection holes 8 forms a cylindrical airflow barrier 9.

When the substrate 3 is rectangular, gas injection holes 8 may be continuously provided to surround the substrate 3 to form a rectangular air flow barrier 9. Although the gas injection holes 8 appear to be provided on the periphery of the temperature control unit 22 in the drawing, they are not functionally related to the temperature control unit 22 at all, and It is not a one-piece configuration.

In FIG. 3, an Si substrate supported by the substrate support 2 is used as the substrate 3. The temperature of the substrate 3 is controlled via the substrate support 2 in contact with the temperature controller 22. The source gas 6 uses SiH ₄ gas and NH ₃ gas, and the catalyst CV
D forms a thin film of SiN on the Si substrate.

As the gas to be injected from the gas injection holes 8, high-purity N ₂ gas inert to the source gas 6 is used, and is injected toward the closed shutter 4 at a flow rate of 100 sccm to form an air flow barrier 9. To form

The SiH ₄ gas and NH ₃ gas of the source gas 6 are introduced from the outside of the chamber 1 through the source gas supply pipe 7 and released into the chamber 1 from the plurality of source gas discharge holes 71. They are 1.2sccm and 100sccm respectively. The catalyst body 5 made of W (tungsten) knitted in a mesh shape has a power of about 1
The raw material gas 6 that has been heated to 600 ° C. and has passed through the catalyst body 5 is thermally decomposed. In the meantime, the active species of the thermally decomposed raw material gas 6 are blocked by the gas flow barrier 9 formed by the N ₂ gas 82 injected from the gas injection holes 8 and cannot reach the surface of the substrate 3, so that No membrane is performed.

At the start of film formation, when the thermal decomposition reaction of the raw material gas 6 becomes constant, the N ₂ gas 82 injected from the gas injection holes 8 is stopped, and the shutter 4 is opened by the shutter driving unit 41. By doing. That is,
When the airflow barrier 9 formed in the gap between the substrate 3 and the shutter 4 disappears and the shutter 4 is opened, the film formation can be started at a rapid rise.

When the film is formed to a predetermined thickness on the surface of the substrate 3, the shutter 4 is closed and
From the gas injection holes 8 by spraying N ₂ gas N ₂ gas gas 8
2 by forming an airflow barrier 9. At this time, the substrate supporting unit 2 is separated from the temperature control unit 22, the emission of the raw material gas 6 is stopped, and the heating of the catalyst body 5 is stopped. However, the end of the film formation can be instantaneous because the gas flow barrier 9 prevents the thermally decomposed raw material gas 6 from reaching the substrate 3. [Second Embodiment] In FIG. 4, when the gas 82 is injected from the gas injection holes 8 toward the center of the substrate 3, the shape of the airflow barrier 9 becomes conical with the substrate 3 as the bottom surface. Three
Cover. In FIG. 4, since the substrate 3 is square, the airflow barrier 9 has a so-called pyramid-like pyramid shape and covers the substrate 3.
It is possible to shield the source gas from flowing around and reaching the substrate 3. In the case where the substrate 3 is circular, if the gas injection holes 8 are continuously formed in a circular shape, the airflow barrier 9 becomes conical and covers the substrate 3.

When the substrate 3 is covered by such a conical airflow barrier 9, the substrate 3 is covered only by the airflow barrier 9, so that the cylindrical airflow barrier 9 shown in FIG. The shutter 4 does not need to be the other lid facing the substrate 3. Therefore, the source gas can be shielded by the conical airflow barrier 9 alone, and there is an advantage that it is not necessary to cooperate with the shutter closing operation. [Third Embodiment] In FIG. 5, a gas injection hole 8 for injecting an inert gas into a raw material gas 6 for forming an air flow barrier 9 with a gas 82 is provided at a peripheral portion of the shutter 4 on a side facing the substrate 3. To be provided.

FIG. 6 shows a case where the shutter 4 is circular.
A gas introduction pipe 81 is provided at the peripheral edge of the shutter 4, a plurality of gas injection holes 8 are provided, and a gas 82 is injected toward the substrate 3 to provide a cylindrical airflow barrier 9. The gas introduction pipe 81 may be provided so as to surround the peripheral edge according to the shape of the shutter 4. Further, the gas injection holes 8 may be provided continuously so that an airflow barrier 9 corresponding to the shape of the shutter 4 can be formed.
The same effect as described above can be obtained.

In this case, the gas injection holes are provided in the peripheral portion of the temperature control section where the substrate support section on which the substrate is supported contacts.
This gas injection hole is an example of a configuration that is completely unrelated to the function of the temperature control unit, and various configurations are available for forming an airflow barrier on the peripheral edge of the substrate, including those provided on the peripheral edge of the shutter. Deformation is possible.

The number and shape of the gas injection holes for injecting the gas that forms the airflow barrier may be such that the material gas does not reach the surface of the substrate as an air curtain. Various modifications are possible.

Further, since the shape of the substrate is various, the cylindrical shape of the airflow barrier corresponding thereto is also various. Even if the substrate is a disk-shaped and the airflow barrier is a rectangular tube, the substrate is rectangular and the airflow barrier is May be any shape as long as the source gas can be sufficiently shielded from the surface of the substrate. Even when the airflow barrier has a conical shape, the substrate may be disc-shaped and the airflow barrier may be pyramidal, or the substrate may be rectangular and the airflow barrier may be conical, as long as the source gas can be sufficiently shielded from the surface of the substrate.

Furthermore, various modifications can be made to the materials such as the substrate, raw material gas and catalyst, the film forming conditions such as pressure, flow rate, temperature, etc., and the structure of the film forming apparatus. It does not do.

(Supplementary Note 1) A thin-film manufacturing apparatus in which a raw material gas is decomposed by contact with a gas-permeable catalyst and deposited on a surface of a substrate to form a film. The hole is for injecting gas, and forms a cylindrical or conical airflow barrier between a peripheral portion of the substrate and a shutter provided to be openable and closable facing the surface of the substrate. An apparatus for manufacturing a thin film, comprising:

(Supplementary Note 2) The thin-film manufacturing apparatus according to Supplementary Note 1, wherein the gas injection holes are provided at a peripheral portion of a temperature control unit that controls the temperature of the substrate via a substrate supporting unit that supports the substrate. Claim 2).

(Supplementary note 3) The thin-film manufacturing apparatus according to supplementary note 1, wherein the gas injection hole is provided at a peripheral portion of the shutter.

(Supplementary Note 4) The thin film production apparatus according to Supplementary Note 1, wherein the gas flow barrier is made of a gas that is non-reactive with the source gas.

(Supplementary note 5) The thin film production apparatus according to supplementary note 4, wherein the gas is an inert gas.

(Supplementary note 6) The method for producing a thin film according to supplementary note 4, wherein the gas is hydrogen gas or nitrogen gas.

(Supplementary Note 7) A step of supporting the substrate on the substrate supporting portion, carrying the substrate into the chamber, and bringing the substrate supporting portion into contact with the temperature control portion to control the temperature of the substrate; Closing at an opposing position, forming a gas flow barrier by injecting gas from a gas injection hole between the peripheral edge of the substrate and the shutter, releasing the source gas into the chamber, and heating the substrate. A step of transferring the gas toward the substrate through the catalyst body, a step of stopping injection of the gas and opening the shutter at the start of film formation, and closing and closing the shutter at the end of film formation. Forming a gas flow barrier.

[0070]

Conventionally, if the start and end of the film formation by the catalytic CVD method capable of forming the film without damaging the formed film are performed by opening and closing the shutter, a sharp start and end are required. There was an inability to do so. On the other hand, according to the present invention, the start and end of film formation can be instantaneously controlled with a simple configuration and a simple process.

As a result, the present invention greatly contributes to the increasingly versatile use of the catalytic CVD method, which is expected to be effective in forming an ultra-thin film of the order of magnitude.

[Brief description of the drawings]

FIG. 1 is a schematic partially cutaway perspective view of a first embodiment of the present invention.

FIG. 2 is a perspective view of a main part in the case of a circular substrate according to the first embodiment.

FIG. 3 is a side sectional view of a main part at the start of film formation and at the end of film formation.

FIG. 4 is a perspective view of a main part in the case of a rectangular substrate according to a second embodiment.

FIG. 5 is a side sectional view of a main part of a third embodiment of the present invention.

FIG. 6 is a perspective view of a main part in the case of a circular shutter according to a third embodiment.

FIG. 7 is a cutaway perspective view schematically showing a catalytic CVD apparatus.

FIG. 8 is a schematic side sectional view of a catalytic CVD apparatus immediately before the start of film formation.

FIG. 9 is a schematic side sectional view of a catalytic CVD apparatus during film formation.

FIG. 10 is a schematic side sectional view of a catalytic CVD apparatus immediately after the completion of film formation.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Chamber 11 Exhaust pipe 2 Substrate support part 21 Substrate transfer part 2
Reference Signs List 2 Temperature control unit 3 Substrate 4 Shutter 41 Shutter driving unit 5 Catalyst, 6 Source gas, 7 Source gas supply pipe 71 Source gas discharge hole 8 Gas injection hole 81 Gas introduction pipe 8
2 Gas 9 Airflow barrier 10 Catalytic CVD device

Claims (5)

[Claims] 1. A thin film manufacturing apparatus in which a raw material gas is decomposed by contact with a gas-permeable catalyst and deposited on a surface of a substrate to form a film, comprising a gas injection hole, , Which injects gas and forms a cylindrical or conical airflow barrier between a peripheral portion of the substrate and a shutter provided to be openable and closable facing the surface of the substrate. A thin film manufacturing apparatus characterized by the above-mentioned. 2. The thin-film manufacturing apparatus according to claim 1, wherein the gas injection holes are provided at a peripheral portion of a temperature control unit that controls the temperature of the substrate via a substrate support that supports the substrate. 3. The thin film manufacturing apparatus according to claim 1, wherein said gas injection hole is provided at a peripheral portion of said shutter. 4. The thin-film manufacturing apparatus according to claim 1, wherein the airflow barrier is made of a gas that is non-reactive with the source gas. 5. A step of supporting a substrate on a substrate supporting portion, carrying the substrate into a chamber, and bringing the substrate supporting portion into contact with a temperature control portion to control the temperature of the substrate; A step of closing at a position, a step of injecting a gas from a gas injection hole between a peripheral portion of the substrate and a shutter to form an airflow barrier, and a step of discharging a source gas into the chamber and heating the catalyst. Transferring the gas toward the substrate, stopping the gas injection and opening the shutter at the start of film formation, closing the shutter and closing the airflow barrier at the end of film formation. Forming a thin film.