JP2002139554A - Method for inspecting semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To achieve a stable probing with a low load without damaging a subject to be tested. SOLUTION: A connecting device includes a multilayer film 44 having a plurality of wires for pulling out 48 to which a pyramid-shaped contact terminal 47 made of plating is electrically connected via an anisotropic conductive sheet 52 or plating material and which are extended to nearby areas, and also having a ground layer 49 opposite to the plurality of wires for pulling out across an insulating layer; a retaining member 43 to which the multilayer film is attached while preventing its sagging; and a contact pressure imparting means for imparting the contact pressure for bringing the end of each contact terminal into contact with electrodes. An inspection system is provided with a tester electrically connected to the extension wires and with a positioning means for positioning the contact terminals and the subject of inspection. The system inspects the positioned contact terminals by transmitting electric signals from the tester to the subject of inspection, and receiving the signals therefrom.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a connection device and an inspection system for transmitting an electric signal to an electrode through a contact terminal in contact with the electrode to determine whether the semiconductor device or the like is good or bad. The present invention relates to a connection device and an inspection system that prevent damage to an object to be inspected such as a semiconductor element with respect to a narrow-pitch multi-pin electrode of the object to be inspected such as a semiconductor element.

[0002]

2. Description of the Related Art As a conventional thin probe card capable of inspecting electrical characteristics of a semiconductor device such as a VLSI at a wafer level, the International Tech.
St Conference (International Test Conference) Lecture Papers (Membrane Probe Card Technology: MEMBRANE PROBE CARD TECHNOLOGY)
(Prior Art 1) described on pages 601 to 607 of JP-A No. 6-1980 is known. The conductor inspection probe described in the prior art 1 has a dielectric film formed by forming a wiring on the upper surface of a flexible dielectric film by a lithographic technique and provided at a position corresponding to an electrode of a semiconductor element to be inspected. A semi-spherical bump formed by plating on the through-hole is used as a contact terminal. This prior art 1 is
The bumps connected to the inspection circuit through the wiring and the wiring board formed on the surface of the dielectric film are
This is a method in which a bump is rubbed and brought into contact with an electrode of a semiconductor element to be inspected, and a signal is transmitted and received to perform an inspection.

A conventional probe device is disclosed in Japanese Patent Application Laid-Open No. 2-163664 (prior art 2) and Japanese Patent Application Laid-Open No.
43344 (Prior Art 3), JP-A-8-8382
Japanese Patent Application Laid-Open No. 4 (Prior Art 4), Japanese Patent Application Laid-Open No. H8-220138 (Prior Art 5), and Japanese Patent Application Laid-Open No. H7-283280 (Prior Art 6). Prior art 1 and 2
And 3 and 4 and 5, the supporting means are spring-coupled with translation means (configured to receive the pivot provided on the upper transmission stage at the lower transmission stage), and are substantially flat with the flat membrane probe. A probe apparatus with automatic compensation that causes a substantial coplanar alignment with various devices under test is described. Prior arts 2 and 3 and 4 and 5 also describe that a buffer layer is provided between the lower transmission stage and the membrane.

Further, in prior art 5, a metal conductor layer is provided on the back side of a thin conductor pattern on which metal projections are formed and grounded, thereby achieving impedance matching and low inductance as a microstrip line structure. Has been described. Further, in the prior art 6, a contact terminal having a pointed tip obtained by anisotropically etching a crystalline mold material is connected to the lead wiring on the insulating film on which the lead wiring is formed, and is planted. A probing apparatus is described in which this insulating film is integrated with a wiring substrate by sandwiching a buffer layer and a silicon wafer serving as a substrate.

[0005]

As described in the above prior art 1, in a probe having a flat or hemispherical bump formed thereon, a contact (protruding electrode) is formed on a material surface such as an aluminum electrode or a solder electrode. By rubbing against the contacted material in which the oxide has been generated (scribing operation), the oxide on the surface of the electrode material is scraped off and brought into contact with the metal conductor material on the lower surface to ensure good contact. is there. As a result, by scribing the electrode at the contact point, scraps of the electrode material are generated, which causes a short circuit between wirings and the generation of foreign matter. There was a problem in that securing the electrodes often caused damage to the electrodes.

Further, in the prior arts 2 to 5, the function of parallelizing the group of contacts following the surface of the electrode group on the object to be inspected is provided, but the contact load is applied based on the displacement of the leaf spring. The leaf spring is largely displaced from the point of uniform load, and the load at the time of contact is several hundred m per pin.
There is a need to increase the value to N or more, and as a result, there is a problem in that the electrodes in the inspection object and the active elements and wirings directly thereunder may be damaged. Further, in the prior art 6, the buffer layer alone absorbs the height variation of the contact terminal and the electrode to be contacted, and the probing force applied to the contact terminal from the drive system of the sample stage on which the object to be inspected is placed during probing. It is difficult to absorb, and there is a possibility that the inspection object such as a semiconductor element may be damaged. As described above, in any of the conventional techniques, probing to a narrow pitch multi-pin with a high density of an object to be inspected such as a semiconductor element can be performed stably with low load without damaging the object to be inspected. The point to be realized was not sufficiently considered.

[0007] An object of the present invention is to solve the above problems.
Probing to a narrow pitch multi-pin capable of responding to the high density of the object to be inspected such as a semiconductor element can be stably realized at a low load without damaging the object to be inspected, and high-speed electrical signals, that is, An object of the present invention is to provide a connection device and an inspection system that enable transmission of a high-frequency electric signal. Another object of the present invention is to simply press a contact terminal having a sharp tip against an electrode on an object to be inspected with a low load, without generating scraps of an electrode material or the like, and having a low resistance and stable. It is an object of the present invention to provide a connection device and an inspection system that realize a stable connection. Another object of the present invention is to form a contact terminal having a sharp tip and a lead-out wiring separately and connect them to form a lead-out wiring with a contact terminal, thereby making it possible to reduce the time of manufacture. Improve yield,
An object of the present invention is to provide an inexpensive connection device and an inspection system in which a manufacturing period is reduced.

[0008]

In order to achieve the above object, the present invention provides a method for transmitting and receiving an electric signal by electrically contacting electrodes arranged on an object to be inspected such as a semiconductor element. In the connection device, a plurality of support members for supporting the connection device and a plurality of contact terminals having sharpened tips are juxtaposed in a region on the probing side, and a plurality of contact terminals are electrically connected to the respective contact terminals and drawn out to the peripheral portion. A multilayer film having a ground wiring with an insulating layer interposed therebetween so as to face the lead-out wiring and the plurality of lead-out wirings; and a holding member for attaching the multilayer film so as to eliminate slack in the region in the multilayer film. Contact pressure applying means such as a spring probe for applying a contact pressure for bringing the tip of each contact terminal into contact with each electrode from the support member to the pressing member. A connecting device which is characterized and. The present invention also provides a connection device for transmitting and receiving an electric signal by making electrical contact with electrodes arranged on an object to be inspected such as a semiconductor element. A plurality of pointed contact terminals are juxtaposed in the area on the probing side, and are electrically connected to the respective contact terminals and are insulated so as to face the plurality of lead-out wirings drawn out to the peripheral part and the plurality of lead-out wirings. A multi-layer film having a ground layer sandwiching the layers, a holding member for mounting the multi-layer film so as to eliminate the slack of the region in the multi-layer film, and a contact for bringing the tip of each of the contact terminals into contact with each of the electrodes. A contact pressure applying means such as a spring probe for applying pressure from the support member to the pressing member; A connecting device tip surface of the terminal group is characterized in that a compliance mechanism for engaging the pressing member so as to be parallel out to follow the surface of the electrode group relative to the support member.

According to another aspect of the present invention, there is provided a connecting device for transmitting and receiving an electric signal by making electrical contact with electrodes arranged on an object to be inspected such as a semiconductor element. A plurality of contact terminals having sharpened tips are juxtaposed in the region on the probing side, and are electrically connected to the respective contact terminals and are opposed to the plurality of lead wires and the plurality of lead wires which are led out to the peripheral portion. A multilayer film having a ground layer with an insulating layer interposed therebetween, a frame fixed to the back side of the multilayer film opposite to the probing side so as to surround the region, and a slack of the region in the multilayer film. A holding member having a portion for projecting the region so as to eliminate the region and attaching the frame, and a contact pressure for bringing the tip of each of the contact terminals into contact with each of the electrodes from the support member. Contact pressure applying means such as a spring probe applied to the holding member, and when the tip end surface of the contact terminal group is brought into contact with the surface of the electrode group, the tip end surface of the contact terminal group is parallel to the surface of the electrode group. A connection mechanism for engaging the holding member with the support member so that the holding member is extended.

Further, the present invention is characterized in that in the connection device, a buffer layer is provided between the back surface of the region of the multilayer film and the pressing member. Further, the invention is characterized in that, in the multilayer film in the connection device, the lead wiring and the contact terminal are connected by a metal such as solder or a heat diffusion or anisotropic conductive sheet of the metal. Further, the present invention is characterized in that, in the multilayer film in the connection device, the lead wiring and the connection wiring formed in the contact terminal are connected by a metal such as solder or a heat diffusion or anisotropic conductive sheet of the metal. And Further, according to the present invention, in the connection device, the probing side of the support member is disposed on the wiring board, and the electrodes formed on the wiring board are electrically connected to the lead wiring drawn to the peripheral portion of the multilayer film. It is characterized by comprising.

Further, according to the present invention, a sample support system for mounting and supporting an object to be inspected is provided, and a plurality of support members and contact terminals having sharpened tips are arranged in parallel in a region on the probing side. A multilayer film having a plurality of lead wirings electrically connected to the contact terminals and led out to the peripheral part, a ground layer sandwiching an insulating layer so as to face the plurality of lead wirings, and the region in the multilayer film; A pressing member for attaching the multilayer film so as to eliminate the slack of the portion, and a contact pressure applying means for applying a contact pressure for contacting the tip of each contact terminal to each electrode from the support member to the pressing member. Is installed, a tester is provided which is electrically connected to a lead wire drawn out around the multilayer film of the connection device, and the multilayer film of the connection device is provided. Positioning means for positioning the group of contact terminals provided and the group of electrodes arranged on the inspection object is provided, and the group of contact terminals and the group of electrodes aligned by the positioning means are brought into contact with each other. An inspection system is configured to perform an inspection by transmitting and receiving an electric signal from the tester to the object to be inspected.

Further, according to the present invention, a sample support system for mounting and supporting an object to be inspected is provided. A plurality of the electrodes are electrically connected via a conductive sheet and arranged in parallel in the probing-side region, and are electrically connected to the respective contact terminals via a metal such as the solder or heat diffusion of a metal or an anisotropic conductive sheet. A multilayer film having a plurality of lead-out wires led out to the peripheral portion and a ground layer with an insulating layer interposed therebetween so as to face the plurality of lead-out wires, so as to eliminate slack in the region in the multilayer film. A contact member for applying a contact pressure for contacting the tip of each contact terminal to each electrode from the support member to the press member. And a tester electrically connected to a lead wire drawn out around the multilayer film of the connection device is provided, and a contact terminal of the connection device arranged in parallel with the multilayer film of the connection device is provided. Positioning means for positioning the group and the group of electrodes arranged on the object to be inspected is provided. An inspection system is configured to perform an inspection by transmitting and receiving an electric signal to and from an inspection object.

Further, according to the present invention, a sample support system for mounting and supporting an object to be inspected is provided, and a plurality of support members and contact terminals having sharpened tips are provided in parallel in a region on the probing side. A multilayer film having a plurality of lead wires electrically connected to the contact terminals and led to the peripheral portion, a ground layer sandwiching an insulating layer so as to face the plurality of lead wires, and the region in the multilayer film A pressing member for attaching the multilayer film so as to eliminate the slack of the portion, and a contact pressure applying means for applying a contact pressure for contacting the tip of each contact terminal to each electrode from the support member to the pressing member. Is installed, a tester is provided which is electrically connected to a lead wire drawn out around the multilayer film of the connection device, and the multilayer film of the connection device is provided. Positioning means for positioning a group of provided contact terminals and a group of electrodes arranged on the object to be inspected is provided, and the sample support system is raised to a desired height and aligned by the positioning means. The test system is characterized in that a group of contact terminals and a group of electrodes are brought into contact with each other and an electric signal is transmitted and received from the tester to the object to be inspected to perform the inspection.

As described above, according to the above configuration,
Probing to narrow-pitch multi-pins with high density of semiconductor elements is stably realized with low load without damaging the object to be inspected, and high-speed electric signals, that is, high-frequency electric signals (100 MHz to several tens GHz) High frequency)
Can be transmitted. Further, according to the above configuration, by providing a compliance mechanism that eliminates slack in the region where the contact terminals having the sharp ends in the multilayer film are juxtaposed and also makes the contact terminals parallel, the group of the contact terminals having the sharp ends is inspected. A group of electrodes on the object
By simply pressing with a low load per pin (about 3 to 50 mN), it is possible to realize a stable connection with a low resistance of about 0.05 Ω to 0.1 Ω without generating scraps of the electrode material or the like. .

Further, according to the above configuration, in the state of a wafer, a small contact pressure (about 3 to 50 mN per pin) is simultaneously applied to one or many of the semiconductor elements (chips) arranged in parallel. )) And an electrode 3 such as Al or solder having an oxide formed on the surface and 0.05Ω
Connect securely with a stable low resistance value of about 0.1Ω,
An operation test can be performed on each semiconductor element by the tester. That is, according to the above-described configuration, it is possible to cope with high density and narrow pitch of the electrodes, and it is possible to perform inspection by simultaneous probing of a large number of chips, and to perform high-speed electric signal (10
An operation test using a high frequency of about 0 MHz to several tens of GHz can be performed. Further, according to the configuration, the contact terminal and the lead-out wiring are separately formed, and the two are connected to form the lead-out wiring with the contact terminal, thereby improving the production yield and improving the manufacturing time. And an inexpensive connection device and an inspection system with a reduced length can be realized.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a connection device and an inspection device according to the semiconductor device manufacturing method of the present invention will be described with reference to the drawings. As shown in FIG. 1, a large number of LSI semiconductor elements (chips) 2 to be inspected are formed side by side on a wafer 1 and then cut off for use.
FIG. 1A is a perspective view showing a wafer 1 on which a number of semiconductor elements (chips) 2 for LSI are juxtaposed, and FIG. 1B is an enlarged view of one semiconductor element (chip) 2. FIG. A large number of electrodes 3 are arranged on the surface of the semiconductor element (chip) 2 along the periphery. By the way, in the semiconductor element, the density of the electrode 3 and the pitch of the electrode 3 are further advanced with the increase in integration. The pitch of the electrodes is reduced to about 0.2 mm or less, for example, 0.13 mm,
0.1 mm or less, and as the density of the electrodes increases, there is a tendency that the electrodes are arranged from one row to two rows along the periphery and further over the entire surface.

In the connection device (probing device) according to the present invention, in a wafer state, a small contact pressure (one pin) is simultaneously applied to one or many semiconductor elements among a large number of semiconductor elements (chips) arranged in parallel. 3-50m per
N) and an electrode 3 such as Al or solder having an oxide formed on the surface, and securely connected with a stable low resistance value of about 0.05 Ω to 0.1 Ω. Is what you do. That is, the connection device (probing device) according to the present invention can cope with the high density and narrow pitch of the electrodes, and can perform inspection by simultaneous probing of a large number of chips, and can perform high-speed electric signal (1
This enables an operation test using a high frequency of about 00 MHz to several tens of GHz.

FIG. 2 is a diagram showing a main part of the first embodiment of the connection device according to the present invention. In the first embodiment of the present connection device, a support member (upper fixing plate) 40, a center pivot 41 which is a support shaft fixed to the lower end and having a spherical surface 41a at a lower portion, and left, right, front and rear around the center pivot 41 A spring probe 42 which is a pressing force applying means for always applying a constant pressing force to vertical displacement, and a center pivot 41
, While being held in a tiltable manner by a taper (tilt) 43c, a low load (1
A pressing member (pressing plate) 43 to which a pressing force (approximately 3 to 50 mN per pin) is applied (pressed), a multilayer film 44, and a frame 45 fixed to the multilayer film 44
A buffer layer 46 provided between the multilayer film 44 and the pressing member 43; a contact terminal 47 provided on the multilayer film 44; and a drawer provided on the multilayer film 44 and pulled out from the contact terminal 47. And a ground layer 49 provided on the multilayer film 44. The reason why the pressing force to the pressing member 43 is applied by the spring probe 42 is that a substantially constant low-load pressing force can be obtained with respect to the displacement of the tip of the spring probe 42, and the spring force is not necessarily required. There is no need to use the probe 42. The support member (upper fixing plate) 40 is mounted on the wiring board 50. The multilayer film 44 is formed such that its peripheral edge extends outside the frame 45, and this extension is smoothly bent outside the frame 45 and fixed on the wiring board 50. At this time, the lead wiring 48 is connected to the electrode 50 provided on the wiring substrate 50.
a. This connection is performed, for example, by connecting the multilayer film 4 to the electrode 50a of the wiring board 50.
4, a via 51 filled with metal plating is provided, and the via 51 and the electrode 50 a are brought into contact with each other by directly applying pressure, or are connected using an anisotropic conductive sheet 52 or solder.

The wiring board 50 is made of a resin material such as a polyimide resin or a glass epoxy resin, and has an internal wiring 50b and a connection terminal 50c. The electrode 5
0a is composed of, for example, a via 50d connected to a part of the internal wiring 50b. Wiring board 50 and multilayer film 4
4, for example, the multilayer film 44 is sandwiched between the multilayer film pressing member 53 and the wiring board 50 and fixed using screws 54 or the like. The multilayer film 44 is formed mainly of a flexible, preferably heat-resistant resin.
In this embodiment, a polyimide resin is used. Buffer layer 4
6 is made of an elastic substance such as an elastomer (a polymer material having rubber-like elasticity). In particular,
Silicon rubber or the like is used. Further, as the buffer layer 46, the holding member 43 may be configured to be movably sealed with respect to the frame 45 so as to supply gas to the sealed space.

If the flatness of the height of the tip of the contact terminal 47 can be ensured, the buffer layer 46 may be omitted. The contact terminals 47, the lead wires 48, and the ground layer 49 are made of a conductive material. Details of these will be described later. Further, in FIG.
Although only two contact terminals are shown for simplicity of description, and of course, a plurality of lead wires 48 are actually arranged as described later.

First, in the connection device (probing device) according to the present invention, in the state of a wafer, one or a large number of semiconductor elements (chips) among a large number of semiconductor elements (chips) arranged in parallel are simultaneously loaded with a low load ( 3 to 50 per pin
(approximately mN) and an electrode 3 such as Al or solder on the surface of which an oxide is formed at a stable low resistance value of about 0.05Ω to 0.1Ω. by this,
There is no need to make a scribe operation as in the prior art,
The generation of scraps of the electrode material due to the scribe operation can be prevented. That is, in the multilayer film 44, the tips of the contact terminals 47 arranged side by side so as to correspond to the arrangement of the electrodes 3 are pointed, and the peripheral portions 44b supported by the frame 45 are separated from the peripheral portions 44b. A region 44a in which the contact terminals 47 are arranged side by side is formed so as to sandwich the buffer layer 46 so as to follow the lower surface 43b of the protrusion 43a formed below the holding member 43, which ensures high precision flatness. The slack of the multilayer film itself is eliminated, and the sharp tips of the contact terminals 47 juxtaposed to the overhanging area 44a are replaced with Al.
Alternatively, the oxide formed on the surface of the electrode (contacted material) 3 can be easily broken by probing the electrode (contacted material) 3 such as solder perpendicularly with a low load (about 3 to 50 mN per pin). By contacting the lower surface of the electrode with the metal conductor material of the electrode, good contact can be secured with a stable low resistance value of about 0.05 Ω to 0.1 Ω. In particular, with respect to the peripheral portion 44b supported by the frame 45, the peripheral portion 4b
Region portion 44a in which a large number of contact terminals 47 in 4b are juxtaposed.
Is stretched across the buffer layer 46 following the lower surface 43b of the protrusion 43a formed on the lower side of the pressing member 43, which ensures a high degree of flatness, thereby eliminating the slack of the multilayer film itself. The object is to ensure high accuracy by matching the flatness of the tips of the many contact terminals 47 with the flatness of the lower surface 43b of the protruding portion 43a. Note that the amount of protrusion in the region portion 44a is determined by the amount of protrusion of the adjustable screw 57, which is fastened to the pressing member (pressing plate) 43 right and left and front and rear about the center pivot 41, from the lower surface of the pressing member 43. become. That is, the holding member 4
3 is fixed to the peripheral portion 4a of the region portion 44a in the multilayer film 44.
Until it comes into contact with the upper surface of the frame 45 to which the adhesive 4b is fixed, the screws 56 inserted into the holes formed in the holding member provided on the left and right and front and rear with the center pivot 41 as a center.
5, the projecting portion 43a of the pressing member 43 is lowered, and the region 44a in which a large number of contact terminals 47 are juxtaposed via the buffer layer 46 is extended, thereby preventing the multilayer film itself from sagging. become.
Thereby, the flatness of the sharp tip of the contact terminal over the large number of contact terminals 47 can be secured with high accuracy of about ± 2 μm or less.

FIG. 3 shows the parallel arrangement of the surface (contacted material surface) 3a of the electrode (contacted material) 3 and the many contact terminals 47 corresponding to the electrode for one or many semiconductor elements.
The holding member (holding plate) 4
3 is supported by a center pivot 41 so as to be tiltable, and a constant pressing force is always applied to the vertical displacement of the pressing member 43 by a spring probe 42 installed symmetrically left, right, front and rear about the center pivot 41. It is to be realized by. That is, a low-load-per-pin compliance mechanism is formed by the engagement relationship between the center pivot (holding member support shaft) 41 and the holding member 43 and the symmetrically installed spring probes 42. The tip of the contact terminal 47 follows the surface (contacted material surface) 3a of the electrode (contacted material) 3 of one or a large number of semiconductor elements to perform parallel alignment. The center pivot (holding member support shaft) 41 is located at the center of the holding member 43 as shown in FIG.
In the initial state, the taper (tilt) 43c attached to the upper part of the center pivot and the lower spherical surface 41a of the center pivot can be tilted, and in the initial state, the spring probe 42 is positioned at a predetermined position defined by the balance of the pressing force. I do. Next, since a compliance mechanism is formed between the center pivot (holding member support shaft) 41 and the holding member 43 and by the spring probe 42, as shown in FIG. When contact with the material (electrode) 3 is started, the taper (inclination) 43c of the pressing member is set to the lower spherical surface 41a of the center pivot with the axis of the center pivot 41 as the central axis.
Of the lower part of the center pivot 41
a is separated from the taper (tilt) 43c of the pressing member, and the pressing member 43 is free to freely contact the entire surface 3a of the contacted material (electrode) 3.
And the entire surface 3 of the material to be contacted (electrode) 3 is connected to the pointed tip of a large number of contact terminals.
a, and a variation of about ± 2 μm or less of the height of the tip of each contact terminal is absorbed by local deformation of the buffer layer 46 and the semiconductor wafer 1
± 0.5 of the height of each contacted material (electrode) 3 arranged on the top
The contact by uniform biting is performed according to the variation of about μm, and uniform probing can be realized with a low load (about 3 to 50 mN per pin).

As described above, the projecting portion 43a of the pressing member 43 overhangs the region 44a of the multilayer film 44 where the contact terminals 47 are juxtaposed via the buffer layer 46, and the pressing member 43 is moved to the center pivot 4 position.
1 is supported so as to be tiltable with respect to 1 and a plurality of contact terminals are parallelized between the surfaces connecting the sharp tips and the entire surface 3a of the material to be contacted (electrode) 3 so that a large number of contact terminals are provided. Tip simultaneous and low load (3 pins per pin)
~ 50mN) and uniform probing at 0.05Ω ~
It can be realized with a stable low resistance value of about 0.1Ω. Naturally, the same probing can be realized with one chip. In the multilayer film 44, as shown in FIG. 4, a ground layer 49 is provided so as to oppose the lead-out wiring 48 connected to each contact terminal 47 with the insulating film 66 (74) interposed therebetween. ), The thickness (gap between the lead-out wiring 48 and the ground layer 49) h and the width w of the lead-out wiring 48 are set to appropriate values, and the impedance Z0 of the lead-out wiring 48 is set to about 50 ohm. By doing so, it is possible to match with the circuit of the tester. As a result, disturbance and attenuation of the electric signal transmitted through the lead-out wiring 48 are prevented, and the high frequency (100 MHz to several tens GHz) by the tester is applied to the semiconductor device. ), It is possible to implement an electrical characteristic inspection using a high-speed electrical signal that can cope with this.

As described above, in the multilayer film 44, the lead-out wiring 4 connected to each contact terminal 47
By providing a ground layer 49 opposed to the tester 8 with the insulating film 66 (74) interposed therebetween, the impedance can be set to about 50 ohm which can match the circuit of the tester.
The length of the other probe (contact terminal) is only the contact terminal portion (about 0.05 to 0.5 mm) 47, which enables matching with the circuit of the tester and reduces disturbance of high-speed electric signals. As a result, it is possible to implement an electrical characteristic test on a semiconductor element by using a high-speed electrical signal. FIG. 5 is a diagram showing a main part of a second embodiment of the connection device according to the present invention. In the second embodiment of the present connection device, the via 51 is filled with metal plating and connected to the end of the multilayer film 44 such that the end of the multilayer film 44 is positioned on the lower surface of the wiring board 50 and the end of the lead-out wiring 48 is directed upward. The electrode 50a formed on the lower side of the wiring board 50 is brought into direct contact with the pressure, or is connected using an anisotropic conductive sheet 52 or solder. That is, in the second embodiment, the end of the lead-out wiring 48 in the multilayer film 44 is formed on the upper surface by the via 51, and is connected to the electrode 50 a provided on the lower surface of the wiring substrate 50. The other configuration is the same as that of the first embodiment shown in FIG.

FIG. 6 is a diagram showing a main part of a connection device according to a third embodiment of the present invention. In the third embodiment of the present connection device, instead of the center pivot 41 used in FIG. 2, the holding member 43 is held via the knock pin 55 so as to be slightly tiltable. That is, the four knock pins 55 provided symmetrically with respect to the center of the holding member 43 and provided on the left, right, front and rear are inserted into the tapered holes 58 formed on the support member 40 and extending upward, and fastened to the holding member 43. . The other configuration is the same as that of the first embodiment shown in FIG. That is, FIG. 7 slightly exaggerates the parallel projection of the surface (contacted material surface) 3a of the electrode (contacted material) 3 and the many contact terminals 47 corresponding to the electrode for one or many semiconductor elements. As shown, each of the knock pins 55 attached to the holding member 43 is tiltably supported below the upwardly tapered hole 58 formed in the support member 40, and is tilted left and right with respect to the center of the holding member 43. This is achieved by applying a constant low pressing force (approximately 3 to 50 mN per pin) to the vertical displacement of the pressing member 43 by the spring probes 42 installed symmetrically in the front and rear directions. That is, the engagement relationship between each knock pin 55 attached to the pressing member 43 and the tapered hole 58 formed on the support member (upper fixing plate) 40 and extending upward, and the spring probe 42 symmetrically installed are used. A compliance mechanism with a low load per pin is formed. With this compliance mechanism, the tips of a large number of contact terminals 47 are placed on the surface (contacted material surface) 3a of the electrode (contacted material) 3 of one or many semiconductor elements. The parallel alignment is performed following the movement. First,
As shown in FIG. 6, the head of each knock pin 55 attached to the pressing member 43 is positioned in contact with the upper surface of the supporting member 40 by the pressing force of the spring probe 42 against the pressing member 43. Next, the pressing member 43
Since a compliance mechanism is formed between each knock pin 55 attached to the support member 40 and the tapered hole 58 formed in the support member 40 and by the spring probe 42, as shown in FIG. When the respective pressing pins 55 slide or slide in the tapered holes 58 by an even pressing force, the pressing member 43 is tilted along the entire surface 3a of the contacted material (electrode) 3 by freely tilting. Parallelism is performed between the surface connecting the sharp tips of many contact terminals and the entire surface 3a of the contacted material (electrode) 3, and the height of the tips of the individual contact terminals is about ± 2 μm or less. The variation is absorbed by local deformation of the buffer layer 46, and the height of each contacted material (electrode) 3 arranged on the semiconductor wafer 1 is about ± 0.5 μm. Following the variability is performed contact by uniform bite, low load (per pin 3~50mN
) And uniform probing can be realized.

FIG. 8 is a diagram showing a main part of a fourth embodiment of the connection device according to the present invention. In the fourth embodiment of the present connection apparatus, the via 51 is filled with metal plating and connected to the end of the multilayer film 44 such that the end of the multilayer film 44 is located on the lower surface of the wiring board 50 and the end of the lead-out wiring 48 is directed upward. The electrode 50a formed on the lower side of the wiring board 50 is brought into direct contact with the pressure, or is connected using an anisotropic conductive sheet 52 or solder. That is, in the fourth embodiment, the end of the lead-out wiring 48 in the multilayer film 44 is formed on the upper surface by the via 51, and is connected to the electrode 50 a provided on the lower surface of the wiring board 50. Other configurations are the same as those of the third embodiment shown in FIG. FIG.
FIG. 14 is a diagram showing a main part of a fifth embodiment of the connection device according to the present invention. In the fifth embodiment of the present connection device, the contact terminals 47 and the lead-out wires 4 in the multilayer film 44 are used.
8 is configured in the same manner as the embodiment of the connection device shown in FIGS. That is, in the fifth embodiment, as shown in FIG. 9, the polyimide film 61 is provided so as to correspond only to the region where the electrodes 3 to be inspected are arranged, and the polyimide film 61 corresponds to the electrode 3. A large number of contact terminals 47 are arranged in parallel, and an electrode 62 formed on the polyimide film 61 connected to each contact terminal 47 is electrically connected to an electrode 69 of the polyimide film 65 on which the lead-out wiring 48 is formed. A multilayer film 44 having connection terminals 47 formed by connecting via a sheet 70 and joining and integrating the polyimide film 65, the anisotropic conductive sheet 70 and the polyimide film 61.
Is configured. Note that, as the multilayer film 44, for example, a wiring film including the polyimide film 65, the lead wiring 48, the intermediate polyimide film 66, the ground layer 49, and the polyimide protective film 68 may be formed in advance.

FIG. 10 is a diagram showing a main part of a sixth embodiment of the connection device according to the present invention. The sixth embodiment of the connection device is different from the connection terminal 47 of the multilayer film 44 in FIG.
The configuration of the connection device shown in FIG. 2, FIG. 5, FIG. 6, and FIG. That is, in the sixth embodiment, as shown in FIG. 10, the contact terminal 47 to be inspected is connected to the electrode 69 of the polyimide film 65 on which the lead-out wiring 48 is formed via the anisotropic conductive sheet 70. Thus, the multilayer film 44 on which the connection terminals 47 are formed is formed. In addition, as the multilayer film 44, for example, a polyimide film 65, a lead wire 48,
A wiring film including the intermediate polyimide film 66, the ground layer 49, and the polyimide protective film 68 may be formed in advance.

FIG. 19A is a diagram showing a main part of a connection device according to a seventh embodiment of the present invention. The seventh embodiment of the present connection apparatus is different from the connection shown in FIGS. 2, 5, 6 and 8 except that a component for connecting the contact terminal 47 and the lead-out wiring 48 in the multilayer film 44 is different. The configuration is the same as in the embodiment of the device. That is, in the seventh embodiment, as shown in FIG. 19A, a large number of contacts are made to the silicon wafer mold member 80 described later with reference to FIG. 17B so as to correspond to the electrode 3 to be inspected. The terminals 200 are arranged side by side, and the electrode 200 integrally formed with each contact terminal 47 is
An electrode 69 of the polyimide film 65 on which the lead-out wiring 48 is formed is connected via a solder 201 to the polyimide film 6.
5. The multilayer film 44 in which the connection terminal 47 is formed by joining and integrating the solder 201 and the electrode 200
Is configured. Note that, as the multilayer film 44, for example, a wiring film including the polyimide film 65, the lead wiring 48, the intermediate polyimide film 66, the ground layer 49, and the polyimide protective film 68 may be formed in advance. Further, the electrode 200 integrally formed with the contact terminal 47 and the electrode 69 of the polyimide film 65 are covered with a resin 202 to form a protective film. As the resin 202, for example, an epoxy-based or acrylic-based thermosetting resin or a thermoplastic resin is used. The method for forming the resin 202 for the protective film is, for example, that after soldering the electrode 69 of the polyimide film 65 and the electrode 200 of the connection terminal 47, the resin 202
Is injected by a dispenser and then heat-cured, or pressurized by sandwiching a resin 202 between the multilayer film 44 on which the solder 201 is formed and the mold 80 of the silicon wafer on which the connection terminals 47 are formed. The layer of the resin 202 may be formed by heating and connecting the electrode 69 and the electrode 200 with the solder 201. As the solder, for example, tin-lead eutectic solder or tin-silver solder is used. Note that the resin 202 can be omitted.

FIG. 19B is a diagram showing a main part of an eighth embodiment of the connection device according to the present invention. The eighth embodiment of this connection device is different from the connection shown in FIGS. 2, 5, 6 and 8 except that a component for connecting the contact terminal 47 and the lead-out wiring 48 in the multilayer film 44 is different. The configuration is the same as that of the embodiment of the device. That is, in the eighth embodiment, as shown in FIG. 19B, the contact terminal 47 to be inspected is connected to the electrode 69 of the polyimide film 65 on which the lead wiring 48 is formed via the solder 201 as shown in FIG. By doing so, the multilayer film 44 on which the connection terminals 47 are formed is configured. In addition, as the multilayer film 44, for example, a polyimide film 65, a lead wire 4
8, a wiring film including the intermediate polyimide film 66, the ground layer 49, and the polyimide protective film 68 may be formed in advance. The contact terminals 47 and the polyimide film 6
The fifth electrode 69 is covered with a resin 202 to form a protective film. As the resin 202, for example, an epoxy-based or acrylic-based thermosetting resin or a thermoplastic resin is used. As the solder, for example, tin-lead eutectic solder or tin-silver solder is used. Note that the resin 202 can be omitted.

FIG. 20A is a diagram showing a main part of a ninth embodiment of the connection device according to the present invention. The ninth embodiment of the present connecting device is different from the connecting device shown in FIGS. The configuration is the same as that of the embodiment of the device. That is, in the ninth embodiment, as shown in FIG. 20A, a large number of contacts are made to the silicon wafer mold 80 described later with reference to FIG. The terminals 200 are arranged side by side, and the electrode 200 integrally formed with each contact terminal 47 is
The polyimide film 6 is connected to the solder via electrode 203 formed on the polyimide film 65 on which the lead wiring 48 is formed.
5. The multilayer film 44 on which the connection terminal 47 is formed is formed by joining and integrating the solder via electrode 203 and the electrode 200. The structure of the multilayer film 44 and the resin 202 for the protective film are the same as in the seventh embodiment. The solder via electrode 203 forms solder plating on the lead-out wiring 48.

FIG. 20B is a diagram showing a main part of a tenth embodiment of the connection device according to the present invention. In the tenth embodiment of the present connection device, a portion for connecting the contact terminal 47 and the lead-out wiring 48 in the multilayer film 44 is
2 except that the connection is made directly above the contact terminal 47.
0 (a), which is the same as the ninth embodiment in FIG.
It is configured similarly to the embodiment of the connection device shown in FIGS. 5, 6 and 8. FIG. 21A is a diagram showing a main part of an eleventh embodiment of the connection device according to the present invention. The eleventh embodiment of the present connecting device is different from the connecting device shown in FIGS. The configuration is the same as that of the embodiment of the device. That is, in the eleventh embodiment, as shown in FIG.
(B) A plurality of contact terminals 47 are juxtaposed on a die 80 of a silicon wafer described later, and a tin plating 204 formed on the surface of an electrode 200 integrally formed with each contact terminal 47, and a polyimide formed with a lead-out wiring 48 The gold plating 205 formed on the electrode 69 of the film 65 is thermally diffused and connected by forming a tin-gold alloy, and the polyimide film 65 and the electrode 69 are connected.
And the electrode 200 are joined and integrated to form the multilayer film 44 on which the connection terminal 47 is formed. In addition, as the multilayer film 44, for example, a polyimide film 65, a lead wire 48, an intermediate polyimide film 66,
A wiring film including the ground layer 49 and the polyimide protective film 68 may be formed in advance.

Note that the tin plating 204 may be gold plating and the gold plating 205 may be tin plating, and the materials may be replaced with each other. FIG. 21B is a diagram showing a main part of a twelfth embodiment of the connection device according to the present invention. The twelfth embodiment of the present connection device differs from the twelfth embodiment of FIG. And the configuration of the connection device shown in FIGS. 2, 5, 6 and 8 described above. The first to twelfth described above
In this embodiment, the contact terminals 47 are made of a conductive material. Therefore, since this portion is harder than the multilayer film (wiring film) 44, the contact becomes better when the portion is brought into contact with the electrode of the measurement object.

The arrangement of the contact terminals and the wiring patterns of the lead wires in these connection devices are variously configured in accordance with the object to be inspected, for example, the electrode pattern of the semiconductor integrated circuit. FIG. 11 and FIG.
And a second embodiment will be described. FIG. 11A is a plan view showing a first embodiment of the arrangement of the contact terminals and the lead wiring in the connection device according to the present invention. FIG. 11B
FIG. 4 is a perspective view showing a state in which the multilayer film provided with the wiring is bent. FIG. 12A is a plan view showing another example of the arrangement of the contact terminals and the lead-out wiring in the connection device according to the present invention. FIG. 12 (b)
FIG. 4 is a perspective view showing a state in which the multilayer film 44 provided with the wiring is bent. In these figures, the number of contact terminals and lead wires are reduced and the density is reduced for simplicity of illustration and description. Actually, it goes without saying that a large number of contact terminals can be further provided and the terminals can be arranged at a high density.

FIGS. 11A, 11B, and 12
As shown in (a) and (b), the connection device is, for example, a contact terminal 47 disposed on a multilayer film 44 made of a polyimide film at a position corresponding to the electrode 3 to be inspected.
And a lead wire 48 having one end connected to these contact terminals 47 and the other end routed to a via 51 provided in the peripheral portion of the multilayer film 44. The lead wiring 48 can be wired in various modes. For example, each wiring can be drawn out in one direction and wired, or can be wired radially. Specifically, in the first embodiment shown in FIGS. 12A and 12B, the multilayer film 44 is formed in a square shape, and the vias 51 provided on each side of the square are formed.
A lead wiring 48 is provided up to this point. FIG.
In the second embodiment shown in (a) and (b), the multilayer film 44 is formed in a rectangular shape, and the vias 51 are arranged at both ends.

Next, an outline of a method for manufacturing these connecting devices will be described first. As a method of drawing out wiring in a connection device for transmitting an electric signal to an inspection device main body, for example, when an object to be inspected is an electrode on an LSI surface formed on a wafer, the following is performed.
First, as shown in FIG. 11 (a) or FIG. 12 (a), using a contact terminal forming mold 102 such as a silicon wafer which is slightly larger than the area 101 of the LSI forming wafer, the same as the LSI forming wafer. A hole is formed in the region 101 for forming the contact terminal 47 by using silicon dioxide as a mask and a silicon wafer is formed by anisotropic etching to produce a mold. Then, a projection for forming the contact terminal 47 is provided using this mold. Further, a multilayer film 44 is formed by forming a polyimide film and a lead wire 48 on the surface of the contact terminal forming mold 102. If necessary, a multilayer film 44 may be added to the film of FIG.
A cut 103 is made as shown in FIG. Then, the multilayer film 44 is transferred to the state shown in FIG.
As shown in (b), the inspection area 1 of the LSI forming wafer
A frame 45 is fixed to the back surface of the multilayer film 44 at the area where the contact terminal 47 is formed, and the area corresponding to 01 is bent so as to surround the polygon. Further, as shown in FIGS. 2, 5, 6, and 8, a buffer layer 46 is sandwiched between the framed multilayer film 44 and the holding member 43, and is integrally attached. After removing the mold 102, the substrate is placed on the upper fixed substrate 40 and the wiring substrate 50, and the vias 51 of the lead-out wiring 48 are provided on the electrodes 50a of the wiring substrate 50.
Is connected to the wiring substrate 50 by screws 54 using a conductive sheet 52 or a solder.

In the above embodiment, the case where the object to be inspected contacts the electrodes of all the semiconductor elements formed on the wafer at once has been described, but the present invention is not limited to this. For example, it goes without saying that a multilayer film may be manufactured in a region smaller than the wafer size as a connection device for testing semiconductor elements individually or simultaneously for an arbitrary number of semiconductor elements.

Next, the structure of the contact terminal portion and the method of manufacturing the same in the first embodiment of the connection device according to the present invention will be described. The contact terminal portion shown in FIG. 13 has a polyimide film 71 in the lower layer as a multilayer film 44, and is composed of a bump 72 for forming a projection and a plating film 73 attached to the tip thereof. . Further, on one surface of the polyimide film 71 (the surface facing the substrate), a lead wire 48, a polyimide film 74, a ground layer 49, and a polyimide protective film 75 are formed. The lead wiring 48 is
One end thereof is provided in contact with the bump 72. The contact terminal 47 is formed by, for example, a bump 72 having a pointed pyramid-shaped tip and a plating film 73 formed on the surface of the tip of the pump 72. The bump 72 is formed of nickel or the like which has high hardness and is easily plated. The plating film 73 is harder than the nickel film and is made of rhodium. The reason for using rhodium as the plating film 73 is that the hardness of the rhodium film is larger than that of the nickel film.

FIG. 13 shows a first example of the connection device according to the present invention.
5 shows typical dimensions of a contact terminal portion in the embodiment. That is, for example, 0.13 mm or 0.1, which is 0.2 mm or less, which is a narrow pitch of electrodes in a semiconductor element.
mm, the thickness of the ground layer 49 and the polyimide protective film 75 is about 5 μm, the thickness of the polyimide film 74 is about 50 μm, and the thickness of the polyimide film 71 is about 20 μm.
m, the height of the tip of the contact terminal 47 is about 28 μm, and the width of the bottom surface of the tip is about 40 μm. In the first embodiment, the bottom surface is formed of a contact terminal 47 having a square pyramid of, for example, 10 to 60 μm and a sharp end. Since the square pyramid is patterned by photolithography, the position and size of the square pyramid are determined with high accuracy. In addition, since it is formed by anisotropic etching, the shape can be sharply formed. In particular, the tip can be pointed. These features are common in other embodiments. According to the present embodiment, the pitch of the electrodes in the semiconductor element is narrower than 0.1 mm and the contact terminals 47 corresponding to about 10 to 20 μm.
Can be easily formed. That is, the contact terminal 4
One side of the bottom surface of 7 can be easily formed to about 5 μm. In the state of a multilayer film, the contact terminals 4
7, the accuracy of the height of the contact terminal 47 is ± 2.
Accuracy within μm can be achieved, and as a result, the region 44a in which a number of the contact terminals 47 are arranged side by side with the buffer layer 46 sandwiched by the holding member (holding plate) 43 to eliminate the slack of the multilayer film itself. Also in this case, the accuracy of the height of the contact terminals 47 can be obtained within approximately ± 2 μm, and the probing with the electrodes 3 arranged on the semiconductor element can be stably performed with a low load (about 3 to 50 mN per pin). It becomes possible.

The reason why the tip of the contact terminal 47 is pointed is as follows. That is, when the electrode 3 to be inspected is made of aluminum or the like, an oxide film is formed on the surface, and the resistance at the time of contact becomes unstable. Such an electrode 3
On the other hand, in order to obtain a stable resistance value in which the variation of the resistance value at the time of contact is 0.5Ω or less, the tip of the contact terminal 47 is
It is necessary to break the oxide film on the surface of the electrode 3 to ensure good contact. For this purpose, for example, as described in the prior art, when the tip of the contact terminal is semicircular,
It is necessary to rub each contact terminal against the electrode with a contact pressure of 300 mN or more per pin. On the other hand, when the tip of the contact terminal has a flat portion having a diameter in the range of 10 μm to 30 μm, it is necessary to rub each contact terminal against the electrode with a contact pressure of 100 mN or more per pin. As a result, scraps of the electrode material including the oxide film are generated, which causes a short circuit between wirings and the generation of foreign matters, and damages the electrode or an element immediately below the electrode because the contact pressure of 100 mN is as large as 100 mN or more. Will be.

On the other hand, when the contact terminal 47 having a sharp tip according to the present invention is used, if there is a contact pressure of about 3 to 50 mN or more per pin, the contact terminal 47 does not rub against the electrode 3.
By simply pressing, current can be supplied with a stable contact resistance of 0.5Ω or less. As a result, it is sufficient to contact the electrode with a low stylus pressure, so that damage to the electrode or an element immediately below the electrode can be prevented. Also, the force required to apply pin pressure to all contact terminals can be reduced. As a result, the withstand load of the prober driving device in the test device using this connection device can be reduced, and the manufacturing cost can be reduced. In addition, if 100 per pin
When a load of mN or more can be applied, for example, if one side of the bottom is a projection of a truncated pyramid of about 40 μm, and one side of the tip is smaller than 30 μm, it is not sharp as a point. May be. However, for the above-described reason, it is necessary to sharpen the tip area as small as possible to 5 μm or less. Also, by using the contact terminal 47 having a sharpened tip, it is sufficient to contact the electrode 3 with a low pressing force (3 to 50 mN per pin) without rubbing against the electrode 3, thereby generating scrap of electrode material. Can be prevented. As a result, after probing,
A cleaning step for removing scraps of the electrode material becomes unnecessary, and the manufacturing cost can be reduced.

Next, a manufacturing process for forming the connection device (probing device) shown in FIGS. 2, 5, 6 and 8 will be described with reference to FIGS. FIGS. 14 and 15 illustrate a manufacturing process for forming the connection device shown in FIG. 2, in particular, using a square pyramid hole formed by anisotropic etching in a silicon wafer 80 as a mold material. The pressed state of the thin film on which the contact terminal tip is formed is transferred to the buffer layer 3 via the center pivot 31.
6 shows a manufacturing process for assembling a connection device that can be freely adjusted by using a spring probe 32 and a spring probe 32 in the order of steps.

First, the step shown in FIG. 14A is performed. In this step, a silicon dioxide film 81 of about 0.5 μm is formed on both sides of a (100) plane of a silicon wafer 80 having a thickness of 0.2 to 0.6 mm by thermal oxidation, and then the silicon dioxide film 81 is formed using a photoresist mask. Etching,
Next, using the silicon dioxide film 81 as a mask, the silicon wafer 80 is anisotropically etched to form a square pyramid-shaped etching hole 80a surrounded by the (111) plane. That is, a square pyramid-shaped etching hole 80a surrounded by the (111) plane is formed by anisotropic etching using the silicon dioxide film 81 as a mask.

Next, the step shown in FIG. 14B is performed. In this step, a (111) plane of the anisotropically etched silicon wafer 80 is thermally oxidized in wet oxygen to form a silicon dioxide film 82 of about 0.5 μm.
Next, a conductive coating 83 is formed on the surface, and then a polyimide film 84 (71) serving as a multilayer film is formed on the surface of the conductive coating 83 in a film shape, and then the contact terminals 47 should be formed. After the polyimide film 84 (71) at the position is removed up to the surface of the conductive coating 83, the conductive coating 83 exposed at the opening of the polyimide film 84 is used as an electrode by using the conductive coating 83 as an electrode. A bump 85 (72) serving as a contact terminal is formed by electroplating a material having high hardness such as nickel as a main component. As a material that can form the bump 85 (72) as the contact terminal 47 by electroplating, there is Cu other than nickel, but the hardness is soft and cannot be used alone. Next, FIG.
The step shown in (c) is performed. In this step, a copper conductive film having a thickness of about 1 μm is formed on the surfaces of the polyimide film 84 and the bumps 85 (72) by sputtering or vapor deposition, and wiring is formed on the surface. A lead wiring 48 is formed by a photoresist mask for use, an intermediate polyimide film 86 (74) is further formed on the surface of the polyimide film 84, and a ground layer 49 is formed on the surface. A protective polyimide film 87 (75) is formed on the surface.

Next, the step shown in FIG. 14D is performed. In this step, the protective polyimide film 87 (7
The frame 45 is aligned and fixed on the surface of 5), and then a silicone-based coating material is supplied as a buffer layer 46 into the frame 45. In the present embodiment, for example, the thickness is 0.5 to 3 mm and the hardness (JISA) is 15
About 70 silicon coating materials are used as the elastomer. However, the elastomer is not limited to this. Further, as the elastomer, a sheet-like elastomer may be used, or the elastomer itself may not be used. The function of the buffer layer 46 is to alleviate the impact as a whole when the tips of the numerous contact terminals 47 contact the electrodes 3 arranged on the semiconductor wafer 1 and to reduce the height of the tips of the individual contact terminals 47. The variation of about ± 2 μm or less is absorbed by local deformation, and the contact by uniform biting follows the variation of about ± 0.5 μm of the height of each contacted material (electrode) 3 arranged on the semiconductor wafer 1. Is performed. In particular, in the embodiment according to the present invention, since the load per pin is low, the role of alleviating impact as a whole is small. Therefore, if the variation in the height of the tip of the contact terminal 47 can be formed to about ± 0.5 μm or less, the buffer layer 46
Is not necessarily required. As a method of reducing the variation in the height of the tip of the contact terminal 47 to about ± 0.5 μm or less,
For example, it can be obtained by uniformly and uniformly pressing a group of contact terminals formed on the multilayer film 44 on, for example, a silicon substrate having a sufficient flatness.

Next, the step shown in FIG. 14E is performed. In this step, the holding member 43 is screwed to the frame 45 by the screw 5.
The screw 6 is used. Next, FIG.
Are performed. In this step, a silicon wafer 80 having a multilayer film 44 formed by screwing the pressing member 43 to a frame 45 is formed on a stainless steel fixing jig 88 for etching the silicon wafer 80 as a mold material.
Is mounted between a stainless steel lid 90 via an O-ring 89. Next, the step shown in FIG. 15B is performed. In this step, the silicon wafer 80 and the conductive coating 83 are removed by etching.

Next, the step shown in FIG. 15C is performed. In this step, the multilayer film in which the holding member 43 is screwed to the frame 45 is removed from the lid 90, the O-ring 89, and the fixing jig 88, and then the rhodium plating 91 is formed.
(73) is performed, and the multilayer film pressing member 53 is positioned and bonded around the polyimide film 87 (75) for protection of the multilayer film. The reason for applying the rhodium plating 91 (73) to the surface of the bump 85 (72) formed of nickel or the like that constitutes the contact terminal 47 is that the material of the electrode 3 such as solder or Al is difficult to be attached,
This is because the hardness is higher than the material (nickel) of (72), the oxidation resistance is low, the contact resistance is stable, and the plating is easy. Next, the step shown in FIG. 15D is performed. This process involves cutting the multilayer film into the design profile,
The distance between the holding member 5 and the holding member (holding plate) 43 is adjusted by the screw 57, and the holding member 43 is advanced with respect to the frame 45 by screwing with the screw 56 so that the tip of the screw 57 contacts the upper surface of the frame 45. By pressing the region portion 44a of the multilayer film 44 in which the contact terminals 47 are juxtaposed via the buffer layer 46 with the pressing member 43, the multilayer film is stretched moderately to eliminate slack of the multilayer film itself and extend over a large number of contact terminals. The flatness of the tip of the contact terminal is assured with high accuracy of about ± 2 μm or less.

Next, an assembling process is performed to complete a connection device (probing device) including a thin-film probe card. That is, the multilayer film 44 is attached to the wiring board 50 as shown in FIG. Next, center pivot 4
The taper (tilt) 43c is attached to the upper surface of the holding member 43 in a state where the lower spherical surface 41a of the first member 41 is tapered (tilted) 43c. Next, the center pivot 41 is attached to the support member (upper fixing plate) 40 to which the spring probe 42 is attached, and the wiring board 50 on which the multilayer film 44 is attached is attached to the periphery of the support member 40 to form a thin film probe card. When assembling the connection device (probing device) shown in FIG. 5, first,
After attaching the center pivot 41 to the holding member 43, the multilayer film 44 may be attached to the wiring board 50.

When manufacturing the thin film probe card of FIG. 6 or FIG. 8, except that the knock pin 55 is attached to the holding member 43 instead of the center pivot 41,
4 and a process similar to that shown in FIG. Note that the etching removal of the silicon wafer 80 shown in FIGS.
This may be performed at a stage before the frame 45 shown in FIG. 14 (c) is bonded and fixed, or the pressing member 4 shown in FIG.
3 may be carried out at a stage before attachment (at a stage where only the frame 45 shown in FIG. 14 (c) is bonded and fixed). If the flatness of the height of the tip of the contact terminal 47 can be ensured without the buffer layer 46, the buffer layer 46 is omitted, and a pressing plate 210 in which the frame 45 and the pressing member 43 are integrated is used. be able to.

FIG. 22 shows an embodiment of a manufacturing process in which the buffer layer 46 is omitted and the holding plate 210 is used. The manufacturing process using the holding plate 210 is shown in FIG.
After performing the manufacturing process shown in FIG.
The step shown in FIG. In this step, the pressing plate 21 is formed on the surface of the protective polyimide film 87 (75).
The multi-layer film pressing member 53 is positioned at 0 and the periphery thereof, and is adhesively fixed. Next, the step shown in FIG. In this step, the silicon wafer 80 on which the multilayer film 44 to which the holding plate 210 is fixed is formed on the stainless steel fixing jig 88 for etching the silicon wafer 80 as the mold material, and the O-ring 8
9 and a stainless steel lid 90. Next, the step shown in FIG. In this step, the silicon wafer 80 and the conductive coating 83 are removed by etching.

Next, the step shown in FIG. 22D is performed. In this step, the multilayer film to which the holding plate 210 and the multilayer film holding member 53 are fixed is removed from the lid 90, the O-ring 89, and the fixing jig 88, and then the rhodium plating 91 is applied to cut the multilayer film into a designed outer shape. Things. Next, as in the case of FIG. 15, the assembling process is performed to complete the connection device (probing device) including the thin-film probe card. Next, a manufacturing process for forming the connection device (probing device) shown in FIG. 9 will be described with reference to FIG. FIG.
4 and the same steps as those shown in FIG.
Description is omitted. As shown in FIG.
Anisotropically etched silicon wafer 80 shown in (b)
A conductive coating 83 is formed on the silicon dioxide film 82 on the surface of the conductive coating 83, and then a bump 85 for contact terminals is formed by electroplating the polyimide film 84 (61) provided with an opening on the surface of the conductive coating 83. After the above steps, the polyimide film 84
(61) Copper is formed on the surface of the bump 85 by sputtering or vapor deposition to form a conductive film having a thickness of about 1 μm, and the electrode 62 is formed on the surface thereof by a photoresist mask for forming an electrode. To form

Next, as shown in FIG. 16B, the electrodes 62 are connected via the anisotropic conductive sheet 70 to the vias 69 of the multi-layer film 44, which are formed with the lead-out wirings 48 in advance and have the designed outer shape. . As the multilayer film 44, for example, a wiring film including a polyimide film 65, a lead wiring 48, an intermediate polyimide film 66, a ground layer 49, and a polyimide protective film 68 may be formed in advance. In order to connect the via 69 and the electrode 62, for example, anisorm (manufactured by Hitachi Chemical Co., Ltd.) may be used as the anisotropic conductive sheet 70, or may be connected via solder.

Next, as shown in FIG. 16C, by removing the silicon wafer 80, the multilayer film 44 having the connection terminals 47 formed thereon is obtained. The method of removing the silicon wafer 80 on which the contact terminals 47 are formed includes a method of etching and removing silicon and silicon dioxide, and a method of selectively etching and removing chromium using chromium as the conductive coating 83. There is a method in which the surface of a silicon wafer as a terminal material is oxidized and the polyimide film 84 in which the contact terminals are formed is directly peeled off from the silicon wafer 80 in which the silicon dioxide film 82 is formed. When chromium is selectively removed by etching, for example, etching may be performed at 50 ° C. for about 4 hours using a mixed solution of aluminum chloride hexacrystal water, hydrochloric acid, and water.

The method for removing the silicon wafer 80 on which the contact terminals 47 are formed is as follows.
A method in which a noble metal film such as gold or rhodium is formed on the surface of the silicon dioxide film and the interface with the conductive coating 83 is mechanically peeled off may be used.

Next, as shown in FIG. 16D, the frame 45 and the pressing member 53 are aligned and fixed on the surface of the protective polyimide film 68, and the contact terminal 47 is subjected to rhodium plating 91. . Next, as shown in FIG. 16 (e), a silicone-based coating material is supplied as a buffer layer 46 into the frame 45, the holding member 43 is screwed to the frame 45, and the distance between the frame 45 and the holding member 43 is increased. The area 44a where the contact terminals 47 of the multilayer film 44 are juxtaposed is extruded through the buffer layer 46 by the holding member 43, so that the multilayer film 44 is appropriately stretched to eliminate the slack of the multilayer film itself and to provide a large number of pieces. It is possible to secure a high degree of flatness of about ± 2 μm or less in the flatness of the tip of the contact terminal over the contact terminal. The buffer layer 46 may be a sheet-like elastomer or may not be used.

Next, as shown in FIG.
The multilayer film 44 is attached to the center pivot 41
Is attached to the holding member 43 to complete the thin film probe card. When assembling the connection device (probing device) shown in FIG.
After attaching 1 to the holding member 43, the multilayer film 44 may be attached to the wiring board 50. In the manufacturing method shown in FIG. 16, the anisotropic conductive sheet 70 is used to conduct the vias 69 of the multilayer film 44 and the electrodes 62 formed on the contact terminal bumps 85, but the solder or Sn Needless to say, conduction may be secured by a metal junction such as -Ag or Sn-Au.

Next, a manufacturing process for forming the connection device (probing device) shown in FIG. 10 will be described with reference to FIG.
This will be described with reference to FIG. The description of the same steps as the processes shown in FIGS. 14 and 15 will be omitted. First, as shown in FIG. 17A, a conductive coating 83 is formed on the silicon dioxide film 82 on the surface of the anisotropically etched silicon wafer 80 shown in FIG. 14B, and the surface of the conductive coating 83 is formed. The polyimide film 84 having the openings is electroplated to form bumps 85 for contact terminals. Next, FIG.
As shown in FIG. 7B, the polyimide film 84 is removed by etching.

Next, as shown in FIG. 17C, lead wires 48 are formed in advance, and bumps 85 for contact terminals are formed in the vias 69 of the wiring film 48 having the designed outer shape. Connect via. Next, FIG.
As shown in FIG. 7D, by removing the silicon wafer 80, the multilayer film 44 in which the contact terminals 47 are formed on the wiring film 64 is formed. Next, as shown in FIG. 17E, a structure similar to that shown in FIG. 16E is formed by steps similar to those described with reference to FIG. 16E.

The subsequent process is the same as the process shown in FIG. 16, and the description is omitted. In the manufacturing method shown in FIG.
9 and the anisotropic conductive sheet 70 were used to establish electrical continuity between the bumps 85 for the contact terminals.
Needless to say, conduction may be ensured by a metal junction such as n-Ag or Sn-Au. Next, a manufacturing process for forming the connection device (probing device) shown in FIG. 19 will be described with reference to FIG. The description of the same steps as the processes shown in FIGS. 14 and 15 will be omitted.

First, as shown in FIG.
Anisotropically etched silicon wafer 8 shown in FIG.
The conductive coating 83 is formed on the silicon dioxide film 82 on the surface of the conductive coating 83, and the polyimide film 84 provided with the opening on the surface of the conductive coating 83 is electroplated to be integrated with the bump 85 for the contact terminal. Then, a gold plating 211 is formed on the electrode 200. Next, as shown in FIG. 23B, the polyimide film 84 is removed by etching. Next, as shown in FIG. 23C, a lead wire 48 is formed in advance, and an electrode 200 for a contact terminal is connected to a via 69 of the multilayer film 44 having a designed outer shape via a solder 201. A frame 45 is bonded and fixed to the multilayer film 44, and then a silicone-based coating material is
6 and supplied into the frame 45.

The subsequent process is the same as the process shown in FIG. 14, and the process shown in FIG. In this step, the holding member 43 is screwed to the frame 45 with screws 56, and the stainless fixing jig 8
8, a silicon wafer 80 formed with a multilayer film 44 in which the holding member 43 is screwed to the frame 45 is mounted between a stainless steel lid 90 via an O-ring 89, and the silicon wafer 80 and the conductive coating 83 is removed by etching.

Next, the step shown in FIG. In this step, the multilayer film in which the holding member 43 is screwed to the frame 45 is removed from the lid 90, the O-ring 89, and the fixing jig 88, and then a rhodium plating 91 is applied to the polyimide film 87 for protecting the multilayer film. , A multilayer film pressing member 53 is aligned and adhered to the periphery of the sheet, and then the multilayer film is cut into a designed outer shape. Next, the distance between the frame 45 and the pressing member (pressing plate) 43 is adjusted by screws 57.
And the screw 57 is tightened by the screw 56.
Holding member 43 so that the tip of
To the frame 45 and press the region 44a where the contact terminals 47 of the multilayer film 44 are juxtaposed via the buffer layer 46 with the pressing member 43, so that the multilayer film is appropriately stretched to loosen the multilayer film itself. It is intended to ensure the flatness of the tip of the contact terminal over many contact terminals. Next, an assembling process is performed to complete a connection device (probing device) including the thin film probe card. In the manufacturing method shown in FIG. 23, the solder 201 is used to establish conduction between the via 69 of the multilayer film 44 and the electrode 200 for the contact terminal.
The solder via electrode 203 shown in FIG.
(A) It goes without saying that conduction may be ensured by a metal junction such as Sn-Au in FIG. 21 (b).

FIG. 23 shows a manufacturing process for removing the silicon wafer 80 by etching. As described above, the multilayer film 44 is soldered or tin-gold alloy on the contact terminal electrode 200 shown in FIG. And then selectively etch away the chromium using chromium as the conductive coating 83 to oxidize the surface of the silicon wafer, which is the mold for the contact terminals, to form a silicon dioxide film 82. Needless to say, the contact terminal 47 may be peeled directly from the contact terminal 80.

Next, an electrical characteristic test for a semiconductor element (chip) to be inspected by using the above-described connection device (probing device) according to the present invention will be described with reference to FIG.
This will be described with reference to FIG. FIG. 18 is a diagram showing the entire configuration of the inspection device according to the present invention. The inspection device is configured as a wafer prober in the manufacture of a semiconductor device. The inspection apparatus includes a sample support system 160 that supports a semiconductor wafer 1 to be inspected, a probe system 120 that contacts and contacts an electrode 3 of the object 1 to be inspected, and an operation of the sample support system 160. , A temperature control system 140 that controls the temperature of the device under test 1, and a tester 170 that tests the electrical characteristics of the semiconductor element (chip) 2. The semiconductor wafer 1 has a large number of semiconductor elements (chips) 2 arranged thereon. On the surface of each semiconductor element 2, a plurality of electrodes 3 serving as external connection electrodes are densely arranged as the degree of integration of the semiconductor elements increases. They are arranged at a narrow pitch. The sample support system 160 includes a sample table 162 provided with the semiconductor wafer 1 removably mounted thereon and provided substantially horizontally.
An elevating shaft 164 that is vertically arranged to support the sample table 162, an elevating drive unit 165 that drives the elevating shaft 164 up and down, and an X that supports the elevating drive unit 165.
-Y stage 167. XY stage 1
67 is fixed on the housing 166. Lifting drive unit 16
Reference numeral 5 includes, for example, a stepping motor. The positioning operation of the sample table 162 in the horizontal and vertical directions is performed by combining the moving operation of the XY stage 167 in the horizontal plane, the vertical movement by the elevation drive unit 165, and the like. Further, the sample table 162 is provided with a rotation mechanism (not shown) so that the sample table 162 can be rotationally displaced in a horizontal plane.

The probe system 12 is located above the sample table 162.
0 is placed. That is, FIG. 2 or FIG. 5 or FIG.
Or the connection device 12 shown in FIG. 8 or FIG. 9 or FIG.
0 a and the wiring substrate 50 are provided in a posture facing the sample table 162 in parallel. In this connection device 120a, a multilayer film 44 having contact terminals 47, a buffer layer 46, a frame 45, a pressing member (pressing plate) 43, a center pivot 41, a spring probe 42, and a supporting member (upper fixing plate) 40 are integrated. Is provided. Each contact terminal 47 is connected to the multilayer film 4 of the connection device 120a.
The wiring board 5 is connected via the lead-out wiring 48 provided on the wiring board 5.
The connection terminal 50c provided on the wiring board 50 through the electrode 50a and the via 50d of the
Connected to. In the present embodiment, the connection terminal 50
c is a coaxial connector. This connection terminal 50c
Is connected to the tester 170 via a cable 171 connected to the tester 170. The connection device used here has the structure shown in FIG. 2, but is not limited to this. It goes without saying that the structure shown in FIG. 5, FIG. 6, FIG. 8, FIG. 9 or FIG.

The drive control system 150 is connected to the tester 170 via the cable 172. The drive control system 15
0 sends a control signal to the actuator of each drive unit of the sample support system 160 to control its operation. That is, the drive control system 150 includes a computer therein and controls the operation of the sample support system 160 in accordance with the progress information of the test operation of the tester 170 transmitted via the cable 172. Further, the drive control system 150 includes an operation unit 151, and receives input of various instructions related to drive control, for example,
Accept instructions for manual operation. The sample table 162 is provided with a heater 141 for heating in order to perform a burn-in test on the semiconductor element 2. Temperature control system 1
40 controls the temperature of the semiconductor wafer 1 mounted on the sample table 162 by controlling the heater 141 or the cooling jig of the sample table 162. Further, the temperature control system 140
Is provided with an operation unit 151, and accepts input of various instructions related to temperature control, for example, accepts manual operation instructions.

Hereinafter, the operation of the inspection apparatus will be described.
First, the semiconductor wafer 1 to be inspected is placed on the sample stage 16.
2 and are positioned and mounted. Next, optical images of a plurality of fiducial marks formed separately on the semiconductor wafer 1 placed on the sample stage 162 are captured by an image sensor (not shown) such as an image sensor or a TV camera. The positions of a plurality of reference marks are detected from the obtained image signal. Then, the drive control system 150 is obtained from the CAD data according to the type of the semiconductor wafer 1 stored in the tester 170 or the drive control system 150 from the detected position information of the plurality of reference marks on the semiconductor wafer 1. Based on the arrangement information of the semiconductor elements 2 arranged on the semiconductor wafer 1 and the arrangement information of the electrodes 3 arranged on each semiconductor element 2, two-dimensional position information of the entire electrode group is calculated. Further, of the many contact terminals 47 formed on the multilayer film 44, an optical image of the tip of a specific contact terminal or an optical image of a plurality of fiducial marks formed separately on the multilayer film 44 is transferred to an image sensor or a TV. An image is picked up by an image pickup device (not shown) such as a camera, and the positions of specific contact terminals or a plurality of reference marks are detected from an image signal obtained by the image pickup. Then, the drive control system 150 determines, based on the detected position information of the specific contact terminal or the plurality of reference marks on the multilayer film 44, the contact terminal corresponding to the type of the probe input and stored by the operation unit 151. Based on probe information such as array information and height information, two-dimensional position information of the entire contact terminal group is calculated. The drive control system 150 calculates a shift amount of the two-dimensional position information of the entire electrode group with respect to the calculated two-dimensional position information of the entire contact terminal group, and based on the calculated two-dimensional shift amount. , The XY stage 167 and the rotation mechanism are controlled, and a group of electrodes 3 formed on a plurality of semiconductor elements arranged on the semiconductor wafer 1 is connected to a large number of contacts arranged in parallel to the connection device 120a. It is positioned just below the group of terminals 47. After that, the drive control system 150, for example,
The elevation drive unit 165 is operated based on a gap between the multilayer film 44 and the surface of the region 44a measured by a gap sensor (not shown) installed on
By raising the sample stage 162 until the entire surface 3a of the large number of electrodes (contacted members) 3 comes into contact with the tips of the contact terminals until the surface is pushed up by about 8 to 20 μm,
Each tip in the group of the large number of contact terminals 47 in which the flatness is ensured with high accuracy by projecting the region portion 44a where the large number of contact terminals 47 are juxtaposed in the multilayer film 44,
As shown in FIG. 3 or FIG. 7, the compliance mechanism follows the surface 3a of a group (entire) of a large number of electrodes 3 arranged on each semiconductor element over a plurality of target semiconductor elements so as to follow the surface. And a variation of about ± 2 μm or less of the height of the tip of each contact terminal.
The contact by biting based on a uniform low load (about 3 to 50 mN per pin) is performed following each contacted material (electrode) 3 which is absorbed by local deformation of the semiconductor wafer 1 and arranged on the semiconductor wafer 1, The connection between each contact terminal 47 and each electrode 3 is made with low resistance (0.01Ω to 0.1Ω).

The drive control system 150 controls the drive of the stage 167, the rotation mechanism, and the elevation drive unit 165 in accordance with an operation instruction from the operation unit 151.
In particular, the sample stage 162 has the entire surface 3 of the electrode (contacted material) 3.
8 to 100 μm from the time when a contacts the tip of the contact terminal
The plurality of contact terminals 47 are lifted up by the raising / lowering drive unit 16 until the contact terminals 47 are pushed up to the extent that the entire surface 3a of the plurality of electrodes (contacted members) 3 is parallelized. The variation in the height of the tip of the terminal is absorbed by the buffer layer 46, and the contact by biting based on a uniform low load (about 3 to 50 mN per pin) is performed. The connection is made with a low resistance (0.01 Ω to 0.1 Ω). When a burn-in test is performed on the semiconductor element 2 in this state, the temperature control system 140 controls the temperature of the semiconductor wafer 1 mounted on the sample table 162 to control the temperature of the semiconductor wafer 1.
This is executed by controlling the second heater 141 or the cooling jig.

Further, the cable 171, the wiring board 50,
The semiconductor device formed on the semiconductor wafer 1 and the tester 170 transmit and receive operating power, an operation test signal, and the like via the multilayer film 44 and the contact terminals 47 to determine whether or not the semiconductor device has operating characteristics. Is determined. On this occasion,
In the multilayer film 44, as shown in FIG. 4, a ground layer 49 is provided opposite to the lead-out wiring 48 connected to each contact terminal 47 with the insulating film 66 (74) interposed therebetween, and the impedance Z0 of the lead-out wiring 48 is set. To 50o
hm and matching with the circuit of the tester to prevent disturbance and attenuation of the electric signal transmitted through the lead-out wiring 48, and to a high frequency (about 100 MHz to several tens of GHz) by the tester for the semiconductor element. It is possible to implement an electrical characteristic inspection using a high-speed electrical signal that can be handled.

Further, the above-described series of test operations is performed for each of the plurality of semiconductor elements formed on the semiconductor wafer 1 to determine whether or not the operation characteristics are acceptable.

[0070]

According to the present invention, probing to multiple pins with a narrow pitch accompanying the increase in the density of a semiconductor element can be stably realized at a low load without damaging the object to be inspected, and at a high speed. Signal, that is, a high-frequency electric signal (100 MHz
(High frequency of about several tens GHz). In addition, according to the present invention, a group of contact terminals having a sharp tip is inspected by providing a compliance mechanism that eliminates slack in a region where the contact terminals having the sharp tip in the multilayer film are juxtaposed and parallelizes the area. By simply pressing the group of electrodes on the object with a low load per pin (approximately 3 to 50 mN), no dust such as electrode material is generated.
There is an effect that a stable connection with a low resistance of about 0.05Ω to 0.1Ω can be realized.

Further, according to the present invention, in the state of a wafer, a small contact pressure (about 3 to 50 mN per pin) is simultaneously applied to one or a large number of the semiconductor elements (chips) arranged in parallel. )) And an electrode 3 such as Al or solder having an oxide formed on the surface and 0.05Ω or more.
Connect securely with a stable low resistance value of about 0.1Ω,
The tester has an effect that an operation test can be performed on each semiconductor element. That is, according to the present invention, it is possible to cope with high density and narrow pitch of electrodes, and it is possible to perform inspection by simultaneous probing of a large number of chips, and to perform an operation test using a high-speed electric signal (high frequency of about 100 MHz to several tens of GHz). Can be made possible. Further, according to the present invention, as a material of a multilayer film (insulating film),
By using a material that can be used at a high temperature such as polyimide, an operation test at a high temperature such as a burn-in test can be performed. Further, according to the present invention, by connecting the pointed connection terminal to the lead-out wiring of the multilayer film via an anisotropic conductive sheet or metal bonding, a large number of pointed connections can be easily formed on the multilayer film. Terminals can be arranged side by side.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a wafer as an object to be inspected on which semiconductor elements (chips) are arranged, and a perspective view showing a semiconductor element (chip).

FIG. 2 is a sectional view showing a main part of the first embodiment of the connection device according to the present invention.

FIG. 3 is a cross-sectional view showing a state in which the tips of contact terminals arranged side by side on the multilayer film are brought into contact with the surface of the electrode on the inspection object in the first embodiment of the connection device shown in FIG. 2; .

FIG. 4 is a view showing a partial cross section of a multilayer film in which a wiring for extraction and a ground layer are arranged to face each other with an insulating film interposed therebetween.

FIG. 5 is a sectional view showing a main part of a second embodiment of the connection device according to the present invention.

FIG. 6 is a cross-sectional view showing a main part of a third embodiment of the connection device according to the present invention.

FIG. 7 is a cross-sectional view showing a state where the tips of the contact terminals arranged in parallel with the multilayer film in the third embodiment of the connection device shown in FIG. 6 are brought into contact with the surface of the electrode on the inspection object; .

FIG. 8 is a sectional view showing a main part of a fourth embodiment of the connection device according to the present invention.

FIG. 9 is a cross-sectional view showing a portion where contact terminals are juxtaposed on a multilayer film in a fifth embodiment of the connection device according to the present invention.

FIG. 10 is a sectional view showing a portion where contact terminals are juxtaposed on a multilayer film in a sixth embodiment of the connection device according to the present invention.

FIG. 11A is a plan view showing one embodiment of a polyimide film on which contact terminals and lead-out wires are formed in the connection device according to the present invention, and FIG. 11B is a perspective view thereof.

FIG. 12A is a plan view showing another embodiment of the polyimide film on which the contact terminals and the lead-out wiring are formed in the connection device according to the present invention, and FIG. 12B is a perspective view thereof.

FIG. 13 is a sectional view showing dimensions and shapes of contact terminals and a multilayer film in which the contact terminals are juxtaposed in the connection device according to the present invention.

FIG. 14 is a cross-sectional view showing a first half of a manufacturing process for manufacturing a multilayer film including a pressing member and a frame in the first to fourth embodiments of the connection device according to the present invention.

FIG. 15 is a cross-sectional view showing a latter half of a manufacturing process for manufacturing a multilayer film including a pressing member and a frame in the first to fourth embodiments of the connection device according to the present invention.

FIG. 16 is a cross-sectional view showing a manufacturing process for manufacturing a multilayer film including a holding member and a frame in a fifth embodiment of the connection device according to the present invention.

FIG. 17 is a cross-sectional view showing a manufacturing process for manufacturing a multilayer film including a holding member and a frame in a sixth embodiment of the connection device according to the present invention.

FIG. 18 is a diagram showing an overall schematic configuration showing an embodiment of an inspection system according to the present invention.

FIG. 19A is a cross-sectional view showing a portion where contact terminals are juxtaposed on a multilayer film in a connection device according to a seventh embodiment of the present invention, and FIG. 19B is a connection diagram according to the present invention. It is sectional drawing which shows the part in which the contact terminal was juxtaposed on the multilayer film in 8th Embodiment of an apparatus.

FIG. 20 (a) is a cross-sectional view showing a portion where contact terminals are juxtaposed on a multilayer film in a ninth embodiment of the connection device according to the present invention, and (b) is a connection according to the present invention. It is sectional drawing which shows the part in which the contact terminal was juxtaposed on the multilayer film in 10th Embodiment of an apparatus.

FIG. 21 (a) is a cross-sectional view showing a portion where contact terminals are juxtaposed on a multilayer film in an eleventh embodiment of a connection device according to the present invention, and (b) is a connection according to the present invention. It is sectional drawing which shows the part by which the contact terminal was juxtaposed on the multilayer film in 12th Embodiment of an apparatus.

FIG. 22 is a cross-sectional view showing a manufacturing process for manufacturing a multilayer film including a press plate in the first to fourth embodiments of the connection device according to the present invention.

FIG. 23 is a cross-sectional view showing a manufacturing process for manufacturing a multilayer film including a holding member and a frame in the fifth to twelfth embodiments of the connection device according to the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Wafer, 2 ... Semiconductor element (chip), 3 ... Electrode (contacted material), 40 ... Support member (upper fixing plate), 41 ... Center pivot, 41a ... Lower spherical surface, 42 ... Spring probe, 43 ... Holding member (Pressing plate), 43a: projecting portion, 43b: lower surface, 43c: taper (tilt), 44: multilayer film, 44a: region portion, 44b: peripheral portion, 45:
Frame, 46: buffer layer, 47: contact terminal, 48: lead wiring, 49: ground layer, 50: wiring board, 50a: electrode, 50c: connection terminal, 50d: via, 51: via, 5
2 ... anisotropic conductive sheet, 55 ... knock pin, 61 ... polyimide film, 62 ... electrode, 65 ... polyimide film, 66 ... intermediate polyimide film, 68 ... polyimide protective film, 69 ... via, 70 ... anisotropic conductive sheet, 71 ... polyimide film, 7
2 ... Bump, 73 ... Plating film, 74 ... Polyimide film, 7
5: Polyimide protective film, 91: Rhodium plating, 101
... Area of LSI formed wafer, 102 ... Contact material forming die, 103 ... Cut, 120 ... Probe system, 120a ...
Connection device, 140: temperature control system, 141: heater, 15
0: drive control system, 151: operation unit, 160: sample support system, 162: sample stage, 164: elevating shaft, 165: elevating drive unit, 167: XY stage, 170: tester, 20
0 ... electrode, 201 ... solder, 202 ... resin, 203 ... solder via electrode, 204 ... tin plating, 205 ... gold plating,
210: holding plate, 211: gold plating.

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[Procedure amendment]

[Submission date] November 13, 2001 (2001.11.
13)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Name of invention

[Correction method] Change

[Correction contents]

Patent application title: Semiconductor device inspection method

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Akihiko Ariga 5-2-1, Josuihonmachi, Kodaira-shi, Tokyo Inside Semiconductor Division, Hitachi, Ltd. (72) Inventor Hidetaka Shigi Yoshida, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture 292 Machi-cho, Hitachi, Ltd.Production Technology Laboratory (72) Inventor Takayoshi Watanabe 292 Yoshida-cho, Totsuka-ku, Yokohama, Kanagawa Prefecture, Japan Inside Hitachi, Ltd.Production Technology Laboratory (72) Inventor Ryuji Kono Tsuchiura, Ibaraki Prefecture 502, Kandatecho F-term, Machinery Research Laboratory, Hitachi, Ltd. F-term (reference) 4M106 AA01 BA01 CA70 DD06 DD09 DD10 DD15 DJ02 DJ04 DJ05 DJ06

Claims (3)

[Claims] 1. A sample support system for mounting and supporting an object to be inspected is provided. A plurality of support members and a plurality of pyramid-shaped contact terminals formed by plating are arranged side by side in a region on the probing side. A multilayer film having a plurality of lead wires electrically connected to the contact terminals and led out to the peripheral portion, a ground layer with an insulating layer interposed therebetween so as to face the plurality of lead wires, and the region in the multilayer film A pressing member for attaching the multilayer film so as to eliminate the slack of the portion, and a contact pressure applying means for applying a contact pressure for bringing the tip of each of the contact terminals into contact with each of the electrodes from the supporting member to the pressing member. A tester electrically connected to a lead wire drawn out around the multilayer film of the connection device is provided, and the multilayer film of the connection device is provided. Positioning means for positioning the group of contact terminals arranged in parallel and the group of electrodes arranged on the inspection object is provided, and the group of contact terminals and the group of electrodes aligned by the positioning means are provided. An inspection system, wherein an inspection is performed by sending and receiving an electrical signal from the tester to the object to be inspected in contact with the tester. 2. A sample support system for mounting and supporting an object to be inspected, wherein a support member and a pyramid-shaped contact terminal formed by plating are electrically connected via an anisotropic conductive sheet or a solder material. A plurality of lead-out wirings which are electrically connected to the respective contact terminals via the anisotropic conductive sheet or the solder material and are drawn out to the peripheral portion; A multilayer film having a ground layer with an insulating layer interposed therebetween so as to face the lead-out wiring; a holding member for attaching the multilayer film so as to eliminate slack in the region of the multilayer film; A connecting device having contact pressure applying means for applying a contact pressure for bringing the tip into contact with each electrode from the support member to the pressing member; A tester electrically connected to the lead-out wiring drawn around the film is provided, and a group of contact terminals arranged in parallel with the multilayer film of the connection device and a group of electrodes arranged on the inspection object are provided. Is provided, and a group of contact terminals and a group of electrodes aligned by the positioning unit are brought into contact with each other to transmit and receive an electric signal from the tester to the object to be inspected to perform the inspection. An inspection system characterized in that the inspection system is configured to perform the inspection. 3. A sample support system for mounting and supporting an object to be inspected is provided. A plurality of support members and a plurality of pyramid-shaped contact terminals formed by plating are arranged side by side in an area on the probing side. A multilayer film having a plurality of lead wires electrically connected to the contact terminals and led to the peripheral portion, a ground layer sandwiching an insulating layer so as to face the plurality of lead wires, and the region in the multilayer film A pressing member for attaching the multilayer film so as to eliminate the slack of the portion, and a contact pressure applying means for applying a contact pressure for bringing the tip of each of the contact terminals into contact with each of the electrodes from the supporting member to the pressing member. A tester electrically connected to a lead wire drawn out around the multilayer film of the connection device is provided, and a multilayer film of the connection device is provided. Positioning means for positioning the group of contact terminals arranged in parallel and the group of electrodes arranged on the object to be inspected is provided, and the sample support system is raised to a desired height and positioned by the positioning means. An inspection system configured to contact the group of contact terminals and the group of electrodes with each other to transmit and receive an electric signal from the tester to the object to be inspected to perform an inspection.