JP2002118135A - Connection terminal and semiconductor package using the same as well as manufacturing method thereof - Google Patents
Connection terminal and semiconductor package using the same as well as manufacturing method thereofInfo
- Publication number
- JP2002118135A JP2002118135A JP2000311061A JP2000311061A JP2002118135A JP 2002118135 A JP2002118135 A JP 2002118135A JP 2000311061 A JP2000311061 A JP 2000311061A JP 2000311061 A JP2000311061 A JP 2000311061A JP 2002118135 A JP2002118135 A JP 2002118135A
- Authority
- JP
- Japan
- Prior art keywords
- plating film
- connection terminal
- semiconductor package
- electroless
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 238000007747 plating Methods 0.000 claims abstract description 57
- 229910052737 gold Inorganic materials 0.000 claims abstract description 37
- 239000010931 gold Substances 0.000 claims abstract description 37
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000004020 conductor Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 17
- 229910000990 Ni alloy Inorganic materials 0.000 claims abstract description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 52
- 229910052759 nickel Inorganic materials 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 abstract description 7
- 229910000679 solder Inorganic materials 0.000 description 44
- 230000005496 eutectics Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000003638 chemical reducing agent Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000002507 cathodic stripping potentiometry Methods 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910001453 nickel ion Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical group N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- -1 gold ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Landscapes
- Chemically Coating (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、接続端子とその接
続端子を用いた半導体パッケージ並びに半導体パッケー
ジの製造方法に関する。The present invention relates to a connection terminal, a semiconductor package using the connection terminal, and a method for manufacturing a semiconductor package.
【０００２】[0002]
【従来の技術】電子部品を搭載するプリント配線板や半
導体を直接搭載する半導体搭載用基板は、近年高密度化
が進んでおり、実装方法も高密度化に対応してきてお
り、配線板のスルーホールに電子部品の端子ピンを挿入
して、はんだで固定する実装方法から、配線板の表面層
の端子にはんだで固定する表面実装方法に変わってきて
いる。2. Description of the Related Art In recent years, the density of printed wiring boards on which electronic components are mounted and semiconductor mounting substrates on which semiconductors are directly mounted have been increasing, and mounting methods have been adapted to higher densities. The mounting method in which the terminal pins of the electronic component are inserted into the holes and fixed with solder has been changed to the surface mounting method in which the terminal pins of the surface layer of the wiring board are fixed with solder.
【０００３】また、表面実装用の電子部品でも、はんだ
接続用のリード端子を平行した２列に形成したデュアル
インラインパッケージ（以下、ＤＩＰという。）や、正
方形のパッケージの４辺にリード端子を設けたクワッド
フラットパッケージ（以下、ＱＦＰという。）から、パ
ッケージの裏面に格子状に配列したはんだボールで接続
するボールグリッドアレイ（以下、ＢＧＡという。）に
なってきている。[0003] Also, in electronic parts for surface mounting, lead terminals are provided on four sides of a dual in-line package (hereinafter referred to as DIP) in which lead terminals for solder connection are formed in two rows in parallel, or a square package. In addition, a ball grid array (hereinafter, referred to as BGA) has been changed from a quad flat package (hereinafter, referred to as QFP), which is connected to the back surface of the package by solder balls arranged in a grid.
【０００４】このＢＧＡのはんだボールが接続した端子
構造は、導体端子上にニッケルめっき皮膜、金めっき皮
膜が順次形成されており、その上にはんだボールが接続
されている。In the terminal structure to which the solder balls of the BGA are connected, a nickel plating film and a gold plating film are sequentially formed on conductor terminals, and the solder balls are connected thereon.
【０００５】また、ここで使用されているはんだボール
は、錫と鉛の割合が６：４である共晶はんだボールであ
る。近年、地球環境の問題から鉛を使用しないはんだが
数十種類以上提案されているが、共晶はんだボールの代
替にはなっていない。[0005] The solder balls used here are eutectic solder balls in which the ratio of tin to lead is 6: 4. In recent years, dozens or more types of solders that do not use lead have been proposed due to the problem of the global environment, but they have not been substituted for eutectic solder balls.
【０００６】[0006]
【発明が解決しようとする課題】ところで、従来の共晶
はんだボールが接続した端子構造では、はんだボールの
接続後の熱処理によって、接続信頼性が著しく低下する
ことがあるという課題がある。このはんだボールの接続
不良には、はんだボールそのものが破壊する場合と、は
んだボールとはんだボール接続用端子の界面が剥離する
場合とがあり、はんだボールそのものが破壊する場合
は、かなり大きい外力が加わらなければ起こらず、通常
の使用状態での接続不良は、殆どが、はんだボールとは
んだボール接続用端子の界面が剥離することによって起
こっているという課題があった。However, in the conventional terminal structure in which eutectic solder balls are connected, there is a problem that the heat treatment after the connection of the solder balls may significantly reduce the connection reliability. There are two types of poor connection of the solder ball: a case where the solder ball itself is broken, and a case where the interface between the solder ball and the solder ball connection terminal peels off.When the solder ball itself is broken, a considerably large external force is applied. There is a problem that the connection failure in a normal use state is almost always caused by the peeling of the interface between the solder ball and the solder ball connection terminal.
【０００７】本発明は、熱処理後の接続信頼性に優れ
た、接続端子とその接続端子を用いた半導体パッケージ
並びに半導体パッケージの製造方法を提供することを目
的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a connection terminal, a semiconductor package using the connection terminal, and a method of manufacturing a semiconductor package which are excellent in connection reliability after heat treatment.
【０００８】[0008]
【課題を解決するための手段】本発明は、以下のことを
特徴とする。 （１）導体の表面に無電解ニッケル合金めっき皮膜、無
電解金めっき被膜が、この順に形成され、その上に鉛を
含まない金属ボールが溶着された接続端子。 （２）鉛を含まない金属ボールが、錫合金である（１）
に記載の接続端子。 （３）錫合金が、錫以外の金属として、銀、銅、亜鉛、
及びニッケルのうちから１以上を含む（１）または
（２）に記載の接続端子。 （４）無電解ニッケル合金めっき皮膜が、８０重量％以
上の純度のニッケルからなる（１）〜（３）のうちいず
れかに記載の接続端子。 （５）無電解ニッケル合金めっき皮膜の厚さが、０．５
〜１５μｍの範囲である（１）〜（４）のうちいずれか
に記載の接続端子。 （６）無電解金めっき皮膜が、９９重量％以上の純度の
金からなる（１）〜（５）のうちいずれかに記載の接続
端子。 （７）配線導体と、配線導体の一部の表面に無電解ニッ
ケル合金めっき皮膜、無電解金めっき被膜が、この順に
形成され、その上に鉛を含まない金属ボールが溶着され
た接続端子と、配線導体を支持する基板と、半導体チッ
プと、半導体チップと配線導体を接続する接続導体から
なる半導体パッケージ。 （８）鉛を含まない金属ボールが、錫合金である（７）
に記載の半導体パッケージ。 （９）錫合金が、錫以外の金属として、銀、銅、亜鉛、
及びニッケルのうちから１以上を含む（７）または
（８）に記載の半導体パッケージ。 （１０）無電解ニッケル合金めっき皮膜が、８０重量％
以上の純度のニッケルからなる（７）〜（９）のうちい
ずれかに記載の半導体パッケージ。 （１１）無電解ニッケル合金めっき皮膜の厚さが、０．
５〜１５μｍの範囲である（７）〜（１０）のうちいず
れかに記載の半導体パッケージ。 （１２）無電解金めっき皮膜が、９９重量％以上の純度
の金からなる（７）〜（１１）のうちいずれかに記載の
半導体パッケージ。 （１３）基板の表面に、配線導体を形成し、その配線導
体の一部の表面に無電解ニッケル合金めっき皮膜、無電
解金めっき被膜を、この順に形成し、その上に鉛を含ま
ない金属ボールが溶着された接続端子を形成し、半導体
チップを搭載し、半導体チップと配線導体を接続する接
続導体を形成する半導体パッケージの製造方法。The present invention is characterized by the following. (1) A connection terminal in which an electroless nickel alloy plating film and an electroless gold plating film are formed in this order on a surface of a conductor, and a lead-free metal ball is welded thereon. (2) The lead-free metal ball is a tin alloy (1)
Connection terminal described in. (3) The tin alloy is a metal other than tin, such as silver, copper, zinc,
And the connection terminal according to (1) or (2), which includes at least one of nickel and nickel. (4) The connection terminal according to any one of (1) to (3), wherein the electroless nickel alloy plating film is made of nickel having a purity of 80% by weight or more. (5) The thickness of the electroless nickel alloy plating film is 0.5
The connection terminal according to any one of (1) to (4), which is in a range of from 15 μm to 15 μm. (6) The connection terminal according to any one of (1) to (5), wherein the electroless gold plating film is made of gold having a purity of 99% by weight or more. (7) A wiring conductor, and a connection terminal on which an electroless nickel alloy plating film and an electroless gold plating film are formed in this order on a part of the surface of the wiring conductor, and a lead-free metal ball is deposited thereon. A semiconductor package comprising a substrate supporting the wiring conductor, a semiconductor chip, and a connection conductor connecting the semiconductor chip and the wiring conductor. (8) The lead-free metal ball is a tin alloy (7)
A semiconductor package according to claim 1. (9) The tin alloy is a metal other than tin, such as silver, copper, zinc,
And the semiconductor package according to (7) or (8), which contains at least one of nickel. (10) 80% by weight of electroless nickel alloy plating film
The semiconductor package according to any one of (7) to (9), comprising nickel of the above purity. (11) The thickness of the electroless nickel alloy plating film is 0.
The semiconductor package according to any one of (7) to (10), which has a range of 5 to 15 μm. (12) The semiconductor package according to any one of (7) to (11), wherein the electroless gold plating film is made of gold having a purity of 99% by weight or more. (13) A wiring conductor is formed on the surface of the substrate, and an electroless nickel alloy plating film and an electroless gold plating film are formed in this order on a part of the surface of the wiring conductor, and a lead-free metal is formed thereon. A method of manufacturing a semiconductor package in which a connection terminal to which a ball is welded is formed, a semiconductor chip is mounted, and a connection conductor connecting the semiconductor chip and a wiring conductor is formed.
【０００９】本発明の鉛を含まないはんだボールが接続
した端子構造は、導体の端子上に、無電解ニッケルめっ
き皮膜、無電解金めっき皮膜が、その順に形成されてお
り、その上に鉛を含まないはんだボールが接続している
構造であることを特徴とする。In the terminal structure of the present invention to which a lead-free solder ball is connected, an electroless nickel plating film and an electroless gold plating film are formed on a conductor terminal in this order. It is characterized by a structure in which solder balls not included are connected.
【００１０】はんだボールは、鉛を含まない錫合金のボ
ールであり、錫以外の金属として銀、銅、亜鉛、ニッケ
ルの１種類以上を含むことを特徴とする。The solder ball is a tin alloy ball containing no lead and is characterized by containing one or more of silver, copper, zinc and nickel as a metal other than tin.
【００１１】[0011]
【発明の実施の形態】本発明の無電解ニッケルめっき
は、めっき液中のニッケルイオンをニッケルイオンの還
元剤の動きによって、銅、タングステン、モリブデン等
の導体の端子を活性化した表面にニッケルを析出させた
ものであり、無電解ニッケルめっき皮膜の組成は、還元
剤に起因する元素（燐、ホウ素、窒素等）を含有してニ
ッケルとの合金になるのが通常で、無電解ニッケル／燐
合金めっき皮膜、無電解ニッケル／ホウ素合金めっき皮
膜等である。この無電解ニッケルめっき皮膜は、８０重
量％以上の純度のニッケルであることが好ましく、８０
重量％未満であれば、接続の信頼性が低下する場合もあ
る。また、９０重量％以上の純度であればより好まし
い。無電解ニッケルめっき皮膜の膜厚は、０．１〜２０
μｍであることが好ましく、０．１μｍ未満では、めっ
きの効果がなく接続の信頼性が向上せず、２０μｍを越
えると、効果がそれ以上に向上せず、経済的でないので
好ましくない。さらには、この無電解ニッケルの厚さ
は、０．５〜１０μｍの範囲であることがより好まし
い。BEST MODE FOR CARRYING OUT THE INVENTION In the electroless nickel plating of the present invention, nickel ions in a plating solution are converted to nickel on a surface of a conductor, such as copper, tungsten or molybdenum, which is activated by the action of a reducing agent for nickel ions. Usually, the composition of the electroless nickel plating film contains an element (phosphorus, boron, nitrogen, etc.) derived from a reducing agent and becomes an alloy with nickel. Alloy plating film, electroless nickel / boron alloy plating film, and the like. This electroless nickel plating film is preferably made of nickel having a purity of 80% by weight or more.
If the amount is less than the weight%, the reliability of the connection may decrease. Further, it is more preferable that the purity is 90% by weight or more. The thickness of the electroless nickel plating film is 0.1 to 20.
If it is less than 0.1 μm, there is no effect of plating and the reliability of the connection is not improved, and if it exceeds 20 μm, the effect is not further improved and it is not economical. Further, the thickness of the electroless nickel is more preferably in the range of 0.5 to 10 μm.
【００１２】無電解金めっきのうち、置換型無電解金め
っきは、下地のニッケルと溶液中の金イオンとの置換反
応によってニッケル表面に金皮膜を形成するものであ
り、めっき液には、シアン化合物を含むものと含まない
ものがあるが、いずれのめっき液でも使用できる。ま
た、無電解金めっきのうち、還元型無電解金めっきは、
還元剤の働きによって置換型無電解金めっき皮膜の上に
金を化学反応で析出させるものであり、還元剤にはホウ
素を含むものやイオウを含むものが使用できる。この無
電解金めっき皮膜は、９９重量％以上の純度の金である
ことが好ましく、９９重量％未満であれば、接続の信頼
性が低下する場合もある。さらに、この無電解金めっき
皮膜の純度は、９９．５重量％以上であることがより好
ましい。無電解めっき皮膜の膜厚は、０．００５〜３μ
ｍであることが好ましく、０．００５μｍ未満では、め
っきの効果がなく接続の信頼性が向上せず、３μｍを越
えると、効果がそれ以上に向上せず、経済的でないので
好ましくない。さらには、この無電解金めっき皮膜の厚
さは、０．００５〜０．５μｍの範囲であることがより
好ましい。Among the electroless gold platings, the substitution type electroless gold plating forms a gold film on a nickel surface by a substitution reaction between a base nickel and gold ions in a solution. Some plating solutions include compounds and some do not, but any plating solution can be used. Among electroless gold plating, reduction type electroless gold plating is
The action of the reducing agent causes gold to be deposited on the substitutional electroless gold plating film by a chemical reaction. As the reducing agent, one containing boron or one containing sulfur can be used. The electroless gold plating film is preferably gold having a purity of 99% by weight or more, and if it is less than 99% by weight, the reliability of the connection may be reduced. Further, the purity of the electroless gold plating film is more preferably 99.5% by weight or more. The thickness of the electroless plating film is 0.005 to 3μ.
m is preferable, and if it is less than 0.005 μm, there is no effect of plating and the reliability of connection is not improved. If it exceeds 3 μm, the effect is not further improved and it is not economical. Further, the thickness of the electroless gold plating film is more preferably in the range of 0.005 to 0.5 μm.
【００１３】また、はんだは、鉛を含まない錫合金であ
り、９７．２５重量％錫と３．５重量％銀と０．７５重
量％銅の錫合金が代表的であるが、錫以外の金属として
銀、銅、亜鉛、ニッケルの１種類以上を含むことを特徴
とする錫合金であれば良く、組成比がどのようなもので
も使用でき、鉛を含まないはんだ材料として使用可能で
ある。[0013] The solder is a tin alloy containing no lead, typically a tin alloy of 97.25 wt% tin, 3.5 wt% silver and 0.75 wt% copper. A tin alloy containing at least one of silver, copper, zinc, and nickel as a metal may be used, and any composition ratio can be used, and it can be used as a lead-free solder material.
【００１４】鉛を含まないはんだボール接続用端子の素
材には、銅、タングステン、モリブデン等の金属が使用
できる。鉛を含まないはんだボール接続用端子の下地で
ある基材の種類は、セラミック、半導体、樹脂基板等
で、この樹脂基板には、フェノール、エポキシ、ポリイ
ミド等のものが使用でき、さらに、剛性の強い板状の基
材、柔軟なフレキシブルな基材のいずれも用いることが
できる。この鉛を含まないはんだボールが接続した端子
構造を有する半導体搭載用基板には、ＣＳＰ、ＢＧＡ、
ＭＣＭ、配線板、および半導体チップの他、はんだバン
プを有するＣＳＰ、ＢＧＡ、ＭＣＭ、配線板、および半
導体チップがある。Metals such as copper, tungsten, and molybdenum can be used as the material of the solder ball connection terminal that does not contain lead. The types of base materials that are the bases of the solder ball connection terminals that do not contain lead are ceramics, semiconductors, resin substrates, and the like. The resin substrates can be phenol, epoxy, polyimide, and the like. Either a strong plate-shaped substrate or a flexible substrate can be used. The semiconductor mounting substrate having a terminal structure to which the lead-free solder balls are connected includes CSP, BGA,
In addition to MCMs, wiring boards, and semiconductor chips, there are CSPs, BGAs, MCMs, wiring boards, and semiconductor chips having solder bumps.
【００１５】[0015]
【実施例】実施例１ 厚さ１８μｍの銅箔を両面に貼り合わせた、厚さ０．５
ｍｍの銅張りエポキシ積層板であるＭＣＬ−Ｅ−６７９
（日立化成工業株式会社製、商品名）の銅箔の不要な箇
所をエッチング除去し、エッチングレジストを剥離し、
はんだレジストを形成した、導体パターンの露出した銅
のはんだボール接続用端子を有する半導体搭載用基板を
作製した。その半導体搭載用基板を、脱脂液であるＺ−
２００（株式会社ワールドメタル製、商品名）に、液温
５０℃で１分間浸漬し、室温で２分間水洗し、１００ｇ
／リットルの過硫酸アンモニウム液に室温で１分間浸漬
して、ソフトエッチングし、室温で２分間水洗し、１０
重量％の硫酸に、室温で１分間浸漬して、酸洗し、室温
で２分間水洗し、無電解めっきの活性化を、ＳＡ−１０
０（日立化成工業株式会社製、商品名）に室温で５分間
浸漬し、室温で２分間浸漬し、無電解ニッケルめっき液
であるＮＩＰＳ−１００（日立化成工業株式会社製、商
品名）に、液温８５℃で２０分間浸漬して、Ｎｉ−Ｐめ
っき（Ｐ含有量約７重量％）皮膜を形成し、室温で２分
間水洗し、非シアン系の置換型無電解金めっき液である
ＨＧＳ−１００（日立化成工業株式会社製、商品名）
に、液温８５℃で１０分間浸漬し、純金（純度９９．９
重量％）の皮膜を形成した。上記方法で作成した半導体
搭載用基板のはんだボール接続用端子に、９７．２５重
量％錫と３．５重量％銀と０．７５重量％銅の錫合金で
ある鉛を含まないはんだボールをリフロー炉で接続させ
た。EXAMPLE 1 A copper foil having a thickness of 18 μm was laminated on both sides to a thickness of 0.5
MCL-E-679 mm copper-clad epoxy laminate
Unnecessary portions of copper foil (made by Hitachi Chemical Co., Ltd.) are removed by etching, the etching resist is removed,
A semiconductor mounting substrate having a copper solder ball connecting terminal with a conductive pattern exposed, on which a solder resist was formed, was produced. The substrate for mounting a semiconductor is replaced with a degreasing liquid Z-
200 (manufactured by World Metal Co., Ltd., trade name) for 1 minute at a liquid temperature of 50 ° C., washed with water for 2 minutes at room temperature, and 100 g
Immersion in ammonium persulfate solution for 1 minute at room temperature, soft etching, washing with water for 2 minutes at room temperature, 10 minutes
Immersion in sulfuric acid of 1% by weight at room temperature for 1 minute, pickling, washing with water at room temperature for 2 minutes, activation of electroless plating, SA-10
0 (manufactured by Hitachi Chemical Co., Ltd.) at room temperature for 5 minutes, and immersed at room temperature for 2 minutes, NIPS-100 (manufactured by Hitachi Chemical Co., Ltd., trade name) which is an electroless nickel plating solution, Immersion at a liquid temperature of 85 ° C. for 20 minutes to form a Ni-P plating (P content: about 7% by weight) film, washing with water at room temperature for 2 minutes, and a non-cyanide substitution type electroless gold plating solution, HGS -100 (trade name, manufactured by Hitachi Chemical Co., Ltd.)
At 85 ° C. for 10 minutes in pure gold (purity 99.9).
% By weight). The lead-free solder ball, which is a tin alloy of 97.25% by weight of tin, 3.5% by weight of silver, and 0.75% by weight of copper, is reflowed on the solder ball connecting terminal of the semiconductor mounting substrate prepared by the above method. The furnace was connected.
【００１６】実施例２ 金めっきに、シアン系の置換型無電解金めっき液である
ＩＭ−ＧＯＬＤ（日本高純度化学株式会社製、商品名）
に、液温８５℃で１０分間浸漬し、純金（純度９９．９
重量％）の皮膜を形成し、室温で２分間水洗し、続いて
還元型無電解金めっき液であるＨＧＳ−２０００（日立
化成工業株式会社製、商品名）に、液温６５℃で４０分
間浸漬し、純金（純度９９．９重量％）の皮膜を形成し
た以外は、実施例１と同様にして、はんだボール接続用
端子を有する半導体搭載用基板を作製した。上記方法で
作製した半導体搭載用基板のはんだボール接続用端子
に、９７．２５重量％錫と３．５重量％銀と０．７５重
量％銅の錫合金である鉛を含まないはんだボールをリフ
ロー炉接続させた。EXAMPLE 2 IM-GOLD (trade name, manufactured by Nippon Kojundo Chemical Co., Ltd.), which is a cyan-based substitutional electroless gold plating solution, was used for gold plating.
At 85 ° C. for 10 minutes in pure gold (purity 99.9).
% By weight), washed with water at room temperature for 2 minutes, and then applied to HGS-2000 (manufactured by Hitachi Chemical Co., Ltd., trade name) as a reduction type electroless gold plating solution at a solution temperature of 65 ° C. for 40 minutes. A semiconductor mounting substrate having a solder ball connection terminal was prepared in the same manner as in Example 1 except that the film was immersed to form a film of pure gold (purity: 99.9% by weight). A solder ball that does not contain lead, which is a tin alloy of 97.25% by weight of tin, 3.5% by weight of silver, and 0.75% by weight of copper, is reflowed on the solder ball connecting terminals of the semiconductor mounting substrate manufactured by the above method. The furnace was connected.
【００１７】比較例１ 実施例１と同様にして半導体搭載用基板を作製した。上
記方法で作製した半導体搭載用基板のはんだボール接続
用端子に、６０重量％錫と４０重量％の共晶はんだボー
ルをリフロー炉で接続させた。Comparative Example 1 A semiconductor mounting substrate was manufactured in the same manner as in Example 1. A 60% by weight tin and 40% by weight eutectic solder ball were connected in a reflow furnace to the solder ball connecting terminals of the semiconductor mounting substrate manufactured by the above method.
【００１８】比較例２ 実施例２と同様にして半導体搭載用基板を作製した。上
記方法で作製した半導体搭載用基板のはんだボール接続
用端子に、６０重量％錫と４０重量％の共晶はんだボー
ルをリフロー炉で接続させた。Comparative Example 2 A semiconductor mounting substrate was manufactured in the same manner as in Example 2. A 60% by weight tin and 40% by weight eutectic solder ball were connected in a reflow furnace to the solder ball connecting terminals of the semiconductor mounting substrate manufactured by the above method.
【００１９】実施例１、２と比較例１、２で作製した、
はんだボールが接続したＢＧＡを１５０℃、１００時間
の熱処理を行った後、はんだボールのシェア（引き剥が
し）試験を行った結果、実施例１、２のサンプルでは、
全ての鉛を含まないはんだボールが、ボール内での剪断
による破壊まで耐えることができたが、比較例１、２の
従来の共晶はんだボールは、約９０％の端子において、
無電解ニッケルめっきとはんだボールの界面で破壊が発
生し、熱処理後の接続信頼性が不良であった。The samples prepared in Examples 1 and 2 and Comparative Examples 1 and 2
After performing a heat treatment at 150 ° C. for 100 hours on the BGA to which the solder balls were connected, a shear (peeling) test of the solder balls was performed. As a result, in the samples of Examples 1 and 2,
Although all lead-free solder balls were able to withstand breaking due to shearing within the balls, the conventional eutectic solder balls of Comparative Examples 1 and 2 had about 90% of the terminals
Destruction occurred at the interface between the electroless nickel plating and the solder balls, and the connection reliability after the heat treatment was poor.
【００２０】[0020]
【発明の効果】以上に説明したとおり、本発明によっ
て、熱処理後の接続信頼性に優れた、接続端子とその接
続端子を用いた半導体パッケージ並びに半導体パッケー
ジの製造方法を提供することができる。As described above, according to the present invention, it is possible to provide a connection terminal having excellent connection reliability after heat treatment, a semiconductor package using the connection terminal, and a method of manufacturing a semiconductor package.
Claims (13)
膜、無電解金めっき被膜が、この順に形成され、その上
に鉛を含まない金属ボールが溶着された接続端子。1. A connection terminal in which an electroless nickel alloy plating film and an electroless gold plating film are formed on a surface of a conductor in this order, and a lead-free metal ball is deposited thereon.
請求項１に記載の接続端子。2. The connection terminal according to claim 1, wherein the lead-free metal ball is a tin alloy.
亜鉛、及びニッケルのうちから１以上を含む請求項１ま
たは２に記載の接続端子。3. A tin alloy comprising silver, copper,
The connection terminal according to claim 1, comprising one or more of zinc and nickel.
量％以上の純度のニッケルからなる請求項１〜３のうち
いずれかに記載の接続端子。4. The connection terminal according to claim 1, wherein the electroless nickel alloy plating film is made of nickel having a purity of 80% by weight or more.
０．５〜１５μｍの範囲である請求項１〜４のうちいず
れかに記載の接続端子。5. The method according to claim 1, wherein the thickness of the electroless nickel alloy plating film is:
The connection terminal according to any one of claims 1 to 4, wherein the connection terminal has a range of 0.5 to 15 m.
純度の金からなる請求項１〜５のうちいずれかに記載の
接続端子。6. The connection terminal according to claim 1, wherein the electroless gold plating film is made of gold having a purity of 99% by weight or more.
解ニッケル合金めっき皮膜、無電解金めっき被膜が、こ
の順に形成され、その上に鉛を含まない金属ボールが溶
着された接続端子と、配線導体を支持する基板と、半導
体チップと、半導体チップと配線導体を接続する接続導
体からなる半導体パッケージ。7. A connection in which a wiring conductor and an electroless nickel alloy plating film and an electroless gold plating film are formed on a part of the surface of the wiring conductor in this order, and a lead-free metal ball is deposited thereon. A semiconductor package comprising terminals, a substrate supporting a wiring conductor, a semiconductor chip, and a connection conductor connecting the semiconductor chip and the wiring conductor.
請求項７に記載の半導体パッケージ。8. The semiconductor package according to claim 7, wherein the lead-free metal ball is a tin alloy.
亜鉛、及びニッケルのうちから１以上を含む請求項７ま
たは８に記載の半導体パッケージ。9. The tin alloy may be a metal other than tin, such as silver, copper,
The semiconductor package according to claim 7, comprising one or more of zinc and nickel.
重量％以上の純度のニッケルからなる請求項７〜９のう
ちいずれかに記載の半導体パッケージ。10. An electroless nickel alloy plating film comprising 80
The semiconductor package according to any one of claims 7 to 9, wherein the semiconductor package is made of nickel having a purity of not less than wt%.
が、０．５〜１５μｍの範囲である請求項７〜１０のう
ちいずれかに記載の半導体パッケージ。11. The semiconductor package according to claim 7, wherein the thickness of the electroless nickel alloy plating film is in the range of 0.5 to 15 μm.
の純度の金からなる請求項７〜１１のうちいずれかに記
載の半導体パッケージ。12. The semiconductor package according to claim 7, wherein the electroless gold plating film is made of gold having a purity of 99% by weight or more.
配線導体の一部の表面に無電解ニッケル合金めっき皮
膜、無電解金めっき被膜を、この順に形成し、その上に
鉛を含まない金属ボールが溶着された接続端子を形成
し、半導体チップを搭載し、半導体チップと配線導体を
接続する接続導体を形成する半導体パッケージの製造方
法。13. A wiring conductor is formed on the surface of a substrate, and an electroless nickel alloy plating film and an electroless gold plating film are formed on a part of the surface of the wiring conductor in this order, and lead is contained on the plating film. A method of manufacturing a semiconductor package, comprising forming a connection terminal to which no metal ball is welded, mounting a semiconductor chip, and forming a connection conductor connecting the semiconductor chip and a wiring conductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000311061A JP2002118135A (en) | 2000-10-11 | 2000-10-11 | Connection terminal and semiconductor package using the same as well as manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000311061A JP2002118135A (en) | 2000-10-11 | 2000-10-11 | Connection terminal and semiconductor package using the same as well as manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002118135A true JP2002118135A (en) | 2002-04-19 |
Family
ID=18790891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000311061A Pending JP2002118135A (en) | 2000-10-11 | 2000-10-11 | Connection terminal and semiconductor package using the same as well as manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002118135A (en) |
-
2000
- 2000-10-11 JP JP2000311061A patent/JP2002118135A/en active Pending
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