JP2002110531A - Electron beam aligner, alignment method and method of manufacturing semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electron beam aligner, alignment method and method of manufacturing a semiconductor element with which a pattern can be precisely aligned on a wafer. SOLUTION: This electron beam aligner aligns a pattern on a wafer by using electron beams. Further, the aligner is equipped with a wafer stage on which a wafer is placed, a first stage guide for guiding the wafer stage in a first direction, and a second stage guide for guiding the wafer stage in a second direction intersecting the first direction. The moving direction of the wafer stage is at some angles with the first direction and the second direction.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to an electron beam exposure apparatus, an exposure method, and a semiconductor element manufacturing method. In particular, the present invention relates to an electron beam exposure apparatus, an exposure method, and a semiconductor element manufacturing method capable of accurately exposing a pattern on a wafer.

[0002]

2. Description of the Related Art A conventional electron beam exposure apparatus includes a wafer stage on which a wafer is placed, a first stage guide for guiding the wafer stage in a first direction, and a wafer in a direction substantially perpendicular to the first direction. And a second stage for guiding the stage. The first direction is a longitudinal direction of the first stage guide, and the second direction is a longitudinal direction of the second stage guide. A conventional electron beam exposure apparatus irradiates a desired position with an electron beam having a rectangular shape while continuously moving a wafer stage in a first direction and a direction opposite to the first direction, thereby forming a desired exposure pattern. Form.
Specifically, when the exposure area on the wafer is divided into a plurality of exposure rows substantially parallel to the first direction, the wafer is moved in the first direction with respect to a predetermined exposure row among the plurality of exposure rows. Exposure processing is performed while continuously moving the stage. And
After performing the exposure processing from one end to the other end of the predetermined exposure row, the wafer stage is moved by one exposure row in the second direction. Then, for an exposure row adjacent to the predetermined exposure row,
The exposure process is performed while moving the wafer stage in a direction opposite to the first direction. Exposure processing is performed on the entire exposure area on the wafer by repeating the same operation.

[0003]

With the recent miniaturization of semiconductor devices, the width of wiring and the like included in the semiconductor device is reduced to 100 nm or less, and the positional deviation of an exposure pattern for forming the wiring and the like is also extremely large. High accuracy is required. However, the conventional electron beam exposure apparatus uses the non-linearity of pressurizing the stage guide, the distortion of the wafer stage, and the difference in the characteristics of the wheels sandwiching both sides of the stage guide. A position shift occurs. That is,
Exposure processing is performed on the predetermined exposure row while moving the wafer stage in the first direction, and the wafer stage is moved in the direction opposite to the first direction on the exposure row adjacent to the predetermined exposure row. When the exposure process is performed while moving, the pattern exposed in the predetermined exposure row and the pattern exposed in the adjacent exposure row relatively displace each other. Was. When the pattern exposed to the predetermined exposure row and the pattern exposed to the adjacent exposure row form a wiring pattern of the semiconductor device, the wiring is formed at a position where the misalignment occurs as a result. However, there have been problems such as disconnection and electric field concentration.

Accordingly, an object of the present invention is to provide an electron beam exposure apparatus, an exposure method, and a method for manufacturing a semiconductor device, which can solve the above-mentioned problems. This object is achieved by a combination of features described in the independent claims. The dependent claims define further advantageous embodiments of the present invention.

[0005]

According to a first aspect of the present invention, there is provided an electron beam exposure apparatus for exposing a pattern on a wafer by an electron beam, comprising: a wafer stage on which the wafer is mounted; A first stage guide that guides the wafer stage in a first direction, and a second stage guide that guides the wafer stage in a second direction that intersects the first direction. And the second direction.

There is further provided a position detection unit provided above a region in the middle direction between the first stage guide and the second stage guide from the center of the wafer stage, and for detecting the position of a detected portion of the wafer. Is also good.

[0007] A plurality of laser interferometers for detecting the position of the wafer stage using a laser are further provided, and among the lasers irradiated by the laser interferometer, at least one laser is irradiated in a first direction and a second direction. An angle may be formed with the direction.

[0008] A plurality of laser interferometers for detecting the position of the wafer stage using a laser are further provided, and the irradiation direction of at least one of the lasers irradiated by the laser interferometer makes an angle with the exposure direction of the wafer stage. You may.

[0009] The wafer stage further includes a plurality of mirror sections for reflecting a laser beam emitted by the laser interferometer, and at least one of the mirror reflecting faces of the mirror section has a first direction and a second direction. The second direction and the angle may be formed.

[0010] A transfer unit having a transfer arm for transferring the wafer to the wafer stage may be further provided, and a direction in which the transfer arm transfers the wafer to the wafer stage may be at an angle to the first direction and the second direction.

[0011] At least one of the arrangement directions of the unit blocks of the pattern to be exposed on the wafer may be at an angle with the first direction and the second direction.

[0012] The apparatus may further include a rotating unit for rotating at least one of the first stage guide and the second stage guide in a plane substantially parallel to a plane where the wafer stage contacts the wafer.

An electron gun for generating an electron beam and a slit for shaping the cross-sectional shape of the electron beam into a rectangle are further provided, and at least one side of the electron beam formed into a rectangular shape and projected onto the wafer stage has a first shape. An angle may be formed with the first direction and the second direction.

According to another aspect of the present invention, a wafer stage guided by a first stage guide in a first direction and guided by a second stage guide in a second direction intersecting the first direction is provided. An exposure method for exposing a mounted wafer to a pattern using an electron beam, comprising: generating an electron beam; and moving the wafer stage at an angle to the first direction and the second direction. And irradiating the wafer with an electron beam for exposure.

According to another aspect of the present invention, a wafer stage guided in a first direction by a first stage guide and guided in a second direction intersecting the first direction by a second stage guide is provided. A semiconductor device manufacturing method for manufacturing a semiconductor device on a mounted wafer, comprising: a step of generating an electron beam; and setting a wafer stage in a first direction and a second direction.
And irradiating the wafer with an electron beam while exposing the wafer so as to make an angle with the direction of the wafer.

The above summary of the present invention does not list all of the necessary features of the present invention, and a sub-combination of these features can also be an invention.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described through embodiments of the present invention. However, the following embodiments do not limit the claimed invention and have the features described in the embodiments. Not all combinations are essential to the solution of the invention.

FIG. 1 shows an electron beam exposure apparatus 100 which is an electron beam processing apparatus according to a first embodiment of the present invention. The electron beam exposure apparatus 100 includes an exposure unit 150 for performing a predetermined exposure process on the wafer 30 with an electron beam.
And a control system 14 for controlling the operation of each component of the exposure unit 150
0 is provided.

The exposure unit 150 determines whether the wafer 30 is irradiated with an electron beam irradiation system 110 for irradiating a predetermined electron beam to the inside of the housing 10 and an electron beam irradiated from the electron beam irradiation system 110. Shot control system 11 to be controlled
2, the electron beam is deflected to a predetermined region of the wafer 30 placed on the wafer stage 32, and
And an electron optical system including a wafer projection system 114 for adjusting the size of an image of a pattern to be transferred onto the wafer. The exposure unit 150 includes a stage control system 116 that moves the wafer stage 32 on which the wafer 30 on which a pattern is to be exposed is mounted to a predetermined position.

The electron beam irradiation system 110 has a first electron lens 14 for determining the focal position of the electron beam by the electron gun 12 for generating the electron beam, and a rectangular opening (slit) for passing the electron beam. Slit part 1
6. Since the electron gun 12 takes a predetermined time to generate a stable electron beam, the electron gun 12
An electron beam may always be generated during the exposure processing period. In FIG. 1, the optical axis of the electron beam when the electron beam emitted from the electron beam irradiation system 110 is not deflected by the electron optical system is represented by a chain line A.

The shot control system 112 has a blanking electrode 18 and a round aperture section 20. The round aperture section 20 has a circular opening (round aperture). The blanking electrode 18 can turn on / off the electron beam synchronously at a high speed, and specifically has a function of deflecting the electron beam so as to hit the outside of the round aperture. That is, the blanking electrode 18 can prevent the electron beam from traveling downstream from the round aperture section 20 in the traveling direction of the electron beam. Since the electron gun 12 always emits an electron beam during the exposure processing period, the blanking electrode 18
Is to deflect the electron beam so that the electron beam does not travel downstream from the round aperture unit 20 when changing the pattern to be transferred to the wafer 30 and when changing the area of the wafer 30 where the pattern is exposed. Is desirable.

The wafer projection system 114 has a second electron lens 22, a third electron lens 24, a main deflector 26, and a sub deflector 28. The second electronic lens 22 adjusts a reduction ratio of a pattern image transferred to the wafer 30 with respect to the pattern formed by the slit 16. The third electronic lens 24 functions as an objective lens. The main deflector 26 and the sub deflector 28 deflect the electron beam so that a predetermined area on the wafer 30 is irradiated with the electron beam. In the present embodiment, the main deflector 26 is used to deflect the electron beam between subfields including a plurality of areas (shot areas) that can be irradiated with one shot of the electron beam, and the sub deflector 28 is used to deflect the subfield. Is used for deflection between shot areas in.

The wafer stage control system 116 includes a wafer stage 32, a first stage guide 34, a first stage 36, a second stage guide 38, a second stage 40, a first wheel 42, And two wheels 44.
The first stage 3 is driven by driving a first wheel 42 provided below the wafer stage 32.
6 moves in the first direction, which is the longitudinal direction of the first stage guide 34 provided on the upper part of the first stage guide 6. In addition, the wafer stage 32 is driven by a second wheel 44 provided below the first stage 36 to drive a second stage guide 38 provided above the second stage 40 in a longitudinal direction.
Move in the direction of.

The control system 140 has an overall control unit 130, a deflection control unit 132, an electron lens control unit 134, and a wafer stage control unit 136. Overall control unit 130
Is a workstation, for example, and the deflection control unit 1
32, the electronic lens control unit 134, and the wafer stage control unit 136. The deflection control unit 132 controls the blanking electrode 18, the main deflector 26, and the sub deflector 28. The electronic lens control unit 134 controls a current supplied to the first electronic lens 14, the second electronic lens 22, and the third electronic lens 24. Wafer stage controller 136
Controls the driving of the first wheel 42 and the second wheel 44 to move the wafer stage 32 to a predetermined position.

The electron beam exposure apparatus 10 according to the present embodiment
The operation of 0 will be described. On the wafer stage 32, a wafer 30 to be subjected to exposure processing is mounted. The wafer stage control unit 136 moves the wafer stage 32 so that the region to be exposed on the wafer 30 is positioned near the optical axis A. The electron gun 12 generates an electron beam. Since the electron gun 12 always emits an electron beam during the exposure processing period, before the start of the exposure,
The electron beam passing through the opening of the slit 16 is
The deflection control unit 132 controls the blanking electrode 18 so that the blanking electrode 18 is not irradiated.

Mask projection system 112 and shot control system 1
After the adjustment of 14, the deflection control unit 132 stops the deflection of the electron beam by the blanking electrode 18. Thereby, the electron beam is irradiated on the wafer 30 as described below. The electron gun 12 generates an electron beam, and the first electron lens 14 adjusts the focal position of the electron beam to irradiate the slit portion 16. The slit section 16 shapes the cross-sectional shape of the electron beam into a rectangle. The electron beam that has passed through the opening of the slit portion 16 has a rectangular cross-sectional shape.

The electron beam that has passed through the slit 16 passes through a round aperture included in the round aperture 20, and the reduction ratio of the pattern image is adjusted by the second electron lens 22. The electron beam is then transmitted by the main deflector 26 and the sub deflector 28
It is deflected to irradiate the upper predetermined shot area. In the present embodiment, the main deflector 26 deflects the electron beam between subfields including a plurality of shot areas, and the sub deflector 28 deflects the electron beam between shot areas in the subfield. The electron beam deflected to a predetermined shot area is adjusted by the third electron lens 24 and irradiated on the wafer 30. The electron beam is applied to the wafer 30 so that at least one side of the rectangular cross section forms an angle with any one of the first direction and the second direction.

After a predetermined exposure time has elapsed, the deflection control section 132 controls the blanking electrode 18 to deflect the electron beam so that the electron beam does not irradiate the wafer 30. By the above process, a pattern is exposed on a predetermined shot area on the wafer 30. In order to expose the pattern to the next shot area, the sub deflector 28
Adjusts the electric field so that the pattern image is exposed in the next shot area. Thereafter, the pattern is exposed to the shot area as described above. After exposing the pattern to all the shot areas to be exposed in the subfield,
The main deflector 26 adjusts the magnetic field so that the pattern can be exposed in the next subfield. Electron beam exposure apparatus 10
In the case of No. 0, a desired circuit pattern can be exposed on the wafer 30 by repeatedly executing this exposure processing.

The electron beam exposure apparatus 100, which is an electron beam processing apparatus according to the present invention, may be an electron beam exposure apparatus using a variable rectangle, or may use a blanking aperture array (BAA) device. An electron beam exposure apparatus may be used.

Further, the electron beam exposure apparatus 100 may be an electron beam exposure apparatus provided with a block mask for shaping an electron beam into a predetermined shape. At this time, it is preferable that at least one of the sides of the predetermined shape forms an angle with the first direction and the second direction.

FIG. 2 shows a wafer stage control system 116 according to the first embodiment of the present invention. The wafer stage control system 116 according to the present embodiment includes a wafer stage 32 on which the wafer 30 is placed, a first stage guide 34 for guiding the wafer stage 32 in a first direction, and a first stage guide 34 intersecting the first direction. And a second stage guide 38 for guiding the wafer stage 32 in two directions. The first direction is the longitudinal direction of the first stage guide 34, and the second direction
Is the longitudinal direction of the second stage guide 38.

The electron beam shaped into a rectangular shape in the electron beam irradiation system 110 (see FIG. 1) is projected onto a desired position on the wafer 30. A rectangular cross section 46 of the projected electron beam is exposed on the wafer 30. In the present embodiment, at least one of the sides of the rectangular section 46 forms an angle with the first direction and the second direction. In the present embodiment, the moving direction of the wafer stage 32 is at an angle to the first direction and the second direction.

In this embodiment, it is desirable that the exposure direction of the wafer 30 be a direction substantially parallel to the side of the rectangular section 46. Here, the exposure direction is defined as a rectangular cross section 46.
The exposure direction 90 of the wafer stage 32 when the wafer 30 is exposed by irradiating the wafer 30 with an electron beam having the following. The exposure direction 90 makes an angle with the first direction and / or the second direction. The angle is preferably substantially the same as the angle formed by at least one of the sides of the rectangular cross section 46 and the first and second directions.

In this embodiment, the slit 16 (FIG. 1)
Is preferably arranged so as to have a predetermined angle with respect to the wafer stage control system 116 in a plane substantially parallel to the plane where the wafer 30 and the wafer stage 32 are in contact with each other. The predetermined angle is preferably such that at least one of the sides of the rectangular section 46 has an angle with the first direction and the second direction. In another embodiment, the electron beam is rotated by the electron optical system so that at least one of the sides of the rectangular cross section 46 has an angle with the first direction and the second direction. The beam may be projected onto wafer 30.

Wafer stage control system 1 according to this embodiment
Preferably, 16 further includes a laser interferometer that measures the position of the wafer stage 32 using laser interference, and a mirror unit 60 that reflects the laser emitted by the laser interferometer. At this time, it is preferable that the irradiation direction of the laser makes an angle with the exposure direction 90 of the wafer stage 32. Further, it is preferable that the laser reflecting surface of the mirror section 60 forms an angle with the exposure direction 90 of the wafer stage 32.

Wafer stage control system 1 according to this embodiment
The unit 16 may further include a position detection unit 49 that detects a portion to be detected 48 that is provided on the wafer 30 and defines a crystal direction of the wafer 30 and detects the position of the wafer 30. The detected portion 48 may be a notch or an orientation flat. At this time, it is preferable that the position detection unit 49 is provided above a region in a middle direction between the first direction and the second direction from the center of the wafer stage 32. Further, the position detecting section 49
Is a CCD (Charge Coupled Device)
An imaging device using e) may be used.

FIG. 3 shows a wafer stage control system 116 according to the second embodiment of the present invention. The wafer stage control system 116 according to the present embodiment includes a wafer stage 32 on which the wafer 30 is placed, a first stage guide 34 for guiding the wafer stage 32 in a first direction, and a second stage crossing the first direction. , A second stage guide 38 for guiding the wafer stage 32 in the direction, and a transfer unit 80. The first direction is the longitudinal direction of the first stage guide 34, and the second direction is the longitudinal direction of the second stage guide 38. The transfer section 80 includes a transfer arm 82 that transfers the wafer 30 to the wafer stage 32.

The direction 94 in which the transfer arm 82 transfers the wafer 30 to the wafer stage 32 preferably forms an angle with the exposure direction 90 of the wafer stage 32. Further, it is preferable that the arrangement directions 96 and 98 of the unit blocks 70 of the pattern to be exposed on the wafer 30 form an angle with the first direction and the second direction. Further, the arrangement direction 9 of the unit blocks 70 of the pattern to be exposed on the wafer 30
6 and 98, the transfer arm 82 is mounted on the wafer stage 32.
It is preferable to make an angle with the direction 94 in which the wafer 30 is transferred.

FIG. 4 shows a wafer stage control system 116 according to the third embodiment of the present invention. The wafer stage control system 116 according to the present embodiment includes a wafer stage 32 on which the wafer 30 is placed, a first stage guide 34 for guiding the wafer stage 32 in a first direction, and a second stage crossing the first direction. And a second stage guide 38 for guiding the wafer stage 32 in the direction of. The first direction is the first
The second direction is the longitudinal direction of the second stage guide 38.

The electron beam shaped into a rectangular shape in the electron beam irradiation system 110 (see FIG. 1) is projected onto a desired position on the wafer 30. A rectangular cross section 46 of the projected electron beam is exposed on the wafer 30. In the present embodiment, at least one of the sides of the rectangular section 46 forms an angle with the first direction and the second direction.

In this embodiment, it is desirable that the exposure direction of the wafer 30 is a direction substantially parallel to the side of the rectangular section 46. Here, the exposure direction is defined as a rectangular cross section 46.
The exposure direction 92 of the wafer stage 32 when the wafer 30 is exposed by irradiating the wafer 30 with an electron beam having the following. The exposure direction 92 makes an angle with the first direction and / or the second direction. The angle is preferably substantially the same as the angle formed by at least one of the sides of the rectangular cross section 46 and the first and second directions.

In the present embodiment, the wafer stage control system 116 controls the first stage guide 34 and / or the second stage guide 38 so that the wafer stage 32 and the wafer 3
It may further include a rotating unit that rotates in a plane substantially parallel to a plane contacting the zero. Then, the first stage guide 34
And / or second stage guide 38 may rotate in a plane substantially parallel to the plane where wafer stage 32 and wafer 30 are in contact. First stage guide 34 and / or second stage guide 34
By rotating the stage guide 38, at least one of the sides of the rectangular section 46 has the first shape.
The electron beam may be projected onto the wafer 30 so as to form an angle with the second direction and the second direction.

The wafer stage control system 1 according to the present embodiment
Preferably, 16 further includes a laser interferometer that measures the position of the wafer stage 32 using laser interference, and a mirror unit 60 that reflects the laser emitted by the laser interferometer. At this time, the irradiation direction of the laser is the first direction.
It is desirable to make an angle with the second direction and the second direction. Further, it is desirable that the surface of the mirror unit 60 that reflects the laser is at an angle to the first direction and the second direction.

The wafer stage control system 1 according to the present embodiment
16 may further include a position detection unit 49 that detects a detected portion 48 provided on the wafer 30 and that defines a crystal direction of the wafer 30 to detect the position of the wafer 30. The detected portion 48 may be a notch or an orientation flat. At this time, it is preferable that the position detection unit 49 is provided above a region in the middle direction between the first direction and the second direction from the center of the wafer stage 32. Further, the position detecting section 49
Is a CCD (Charge Coupled Device)
An imaging device using e) may be used.

FIG. 5 shows a wafer stage control system 116 according to a fourth embodiment of the present invention. The wafer stage control system 116 according to the present embodiment includes a wafer stage 32 on which the wafer 30 is placed, a first stage guide 34 for guiding the wafer stage 32 in a first direction, and a second stage crossing the first direction. And a transfer unit 80 for transferring the wafer 30 to the wafer stage 32. The first direction is the longitudinal direction of the first stage guide 34, and the second direction is the longitudinal direction of the second stage guide 38. The transfer section 80 includes a transfer arm 82 that transfers the wafer 30 to the wafer stage 32.

The direction 94 in which the transfer arm 82 transfers the wafer 30 to the wafer stage 32 preferably forms an angle with the first direction and the second direction. Further, it is preferable that the arrangement directions 96 and 98 of the unit blocks 70 of the pattern to be exposed on the wafer 30 form an angle with the first direction and the second direction.

In this embodiment, the wafer stage control system 116 controls the first stage guide 34 and / or the second stage guide 38 so that the wafer stage 32 and the wafer 3
It may further include a rotating unit that rotates in a plane substantially parallel to a plane contacting the zero. Then, the first stage guide 34
And / or second stage guide 38 may rotate in a plane substantially parallel to the plane where wafer stage 32 and wafer 30 are in contact. First stage guide 34 and / or second stage guide 34
By rotating the stage guide 38 of at least one of the sides of the rectangular cross section 46, at least one of the sides has the first shape.
The electron beam may be projected onto the wafer 30 so as to form an angle with the second direction and the second direction.

According to the electron beam exposure apparatus 100 of the present invention, it is possible to set the angle between the exposure direction of the wafer stage 32 and the first and second directions when performing the exposure processing. Therefore, by avoiding an angle at which the displacement of the exposure pattern caused by the exposure direction of the wafer stage 32 becomes discontinuous, the wafer stage 32 can be moved using a fixed correction value. It can be greatly reduced.

FIG. 6 is a flowchart of a semiconductor device manufacturing process according to a fifth embodiment of the present invention for manufacturing semiconductor devices from a wafer. In S10, the flowchart starts. In S12, a photoresist is applied to the upper surface of the wafer. The wafer coated with photoresist is
Wafer stage 32 in electron beam exposure apparatus 100
Placed on In S14, the wafer is exposed to a pattern image by an electron beam. The exposing step of S14 includes a step of generating an electron beam, a step of shaping the cross-sectional shape of the electron beam into a rectangle, and a step of forming at least one side of the rectangularly shaped electron beam in the longitudinal direction of the first stage guide 34. Irradiating the wafer with an electron beam and exposing the wafer so as to make an angle with a certain first direction and a second direction which is a longitudinal direction of the second stage guide.

The exposed wafer is immersed in a developing solution and developed to remove excess resist (S16). Next, in S18, the silicon substrate, the insulating film or the conductive film existing in the region of the wafer from which the photoresist has been removed is etched by anisotropic etching using plasma. In step S20, impurities such as boron and arsenic are implanted into the wafer to form semiconductor elements such as transistors and diodes. In S22, heat treatment is performed to activate the implanted impurities. Also S24
Then, in order to remove organic contaminants and metal contaminants on the wafer, the wafer is washed with a chemical solution. In step S26, a conductive film or an insulating film is formed to form a wiring layer and an insulating layer between the wirings. By combining and repeatedly performing the steps S12 to S26, it becomes possible to manufacture a semiconductor element having an element isolation region, an element region, and a wiring layer on a wafer. In S28, a wafer on which a required circuit is formed is cut out, and a chip is assembled. In S30, the semiconductor device manufacturing flow ends.

Although the present invention has been described with reference to the embodiment, the technical scope of the present invention is not limited to the scope described in the above embodiment. Various changes or improvements can be added to the above embodiment. It should be noted that such modified or improved embodiments may be included in the technical scope of the present invention.
It is clear from the description of the claims.

[0052]

As is apparent from the above description, according to the present invention, it is possible to provide an electron beam exposure apparatus, an exposure method, and a semiconductor element manufacturing method capable of accurately exposing a pattern on a wafer.

[Brief description of the drawings]

FIG. 1 shows an electron beam exposure apparatus 100 which is an electron beam processing apparatus according to a first embodiment of the present invention.

FIG. 2 shows a wafer stage control system 116 according to the first embodiment of the present invention.

FIG. 3 shows a wafer stage control system 116 according to a second embodiment of the present invention.

FIG. 4 shows a wafer stage control system 116 according to a third embodiment of the present invention.

FIG. 5 shows a wafer stage control system 116 according to a fourth embodiment of the present invention.

FIG. 6 is a flowchart of a semiconductor device manufacturing process according to a fifth embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Case 12 Electron gun 16 Slit part 30 Wafer 32 Wafer stage 34 First stage guide 38 Second stage guide 46 Rectangular section 48 Detected part 49 Position detecting part 50 Laser interferometer 52 Laser irradiation direction 60 Mirror part 70 Unit block of pattern 80 Transfer unit 82 Transfer arm 90 Exposure direction of wafer stage 92 Exposure direction of wafer stage 94 Transfer direction of transfer arm 96 Pattern arrangement direction 98 Pattern arrangement direction 100 Electron beam exposure apparatus 116 Wafer stage control system 136 Wafer Stage control unit

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/68 H01L 21/30 541L 5F056 503A

Claims (11)

[Claims] An electron beam exposure apparatus for exposing a pattern on a wafer with an electron beam, comprising: a wafer stage on which the wafer is mounted; a first stage guide for guiding the wafer stage in a first direction; A second stage guide that guides the wafer stage in a second direction that intersects the first direction, wherein a movement direction of the wafer stage is an angle with the first direction and the second direction. An electron beam exposure apparatus, comprising: 2. A position which is provided from a central portion of the wafer stage above a region in an intermediate direction between the first stage guide and the second stage guide, and detects a position of a detected portion of the wafer. The electron beam exposure apparatus according to claim 1, further comprising a detection unit. 3. A laser interferometer for detecting a position of the wafer stage by using a laser, wherein at least one of the lasers irradiated by the laser interferometer has an irradiation direction of the first laser. 2. The electron beam exposure apparatus according to claim 1, wherein an angle is formed with a direction and the second direction. 4. The apparatus according to claim 1, further comprising a plurality of laser interferometers for detecting a position of the wafer stage using a laser, wherein at least one of the lasers radiated by the laser interferometer has an irradiation direction of the wafer stage. The electron beam exposure apparatus according to claim 1, wherein the electron beam exposure apparatus makes an angle with a direction. 5. The apparatus according to claim 1, further comprising: a plurality of mirrors provided on the wafer stage, the mirrors reflecting the laser irradiated by the laser interferometer, and at least one of the mirror reflecting surfaces of the mirror is provided. 4. The electron beam exposure apparatus according to claim 3, wherein an angle is formed between the first direction and the second direction. 6. A transfer unit having a transfer arm for transferring the wafer to the wafer stage, wherein a direction in which the transfer arm transfers the wafer to the wafer stage is the first direction and the second direction. The electron beam exposure apparatus according to claim 1, wherein the electron beam exposure apparatus forms an angle with a direction. 7. The method according to claim 1, wherein at least one of arrangement directions of unit blocks of a pattern to be exposed on the wafer, and the first direction and the second direction form an angle. An electron beam exposure apparatus according to claim 1. 8. The first stage guide and the second stage guide
2. The apparatus according to claim 1, further comprising a rotating unit configured to rotate at least one of the stage guides in a plane substantially parallel to a plane where the wafer stage contacts the wafer.
3. The electron beam exposure apparatus according to claim 1. 9. An electron gun for generating the electron beam, and a slit for shaping a cross-sectional shape of the electron beam into a rectangle, wherein at least one of the electron beams formed into a rectangle and projected onto the wafer stage is provided. 2. The electron beam exposure apparatus according to claim 1, wherein one side forms an angle with the first direction and the second direction. 10. A wafer mounted on a wafer stage guided by a first stage guide in a first direction and guided by a second stage guide in a second direction intersecting the first direction. An exposure method for exposing a pattern using an electron beam, comprising: generating the electron beam; and moving the wafer stage at an angle to the first direction and the second direction. Irradiating the wafer with the electron beam for exposure. 11. A wafer mounted on a wafer stage guided by a first stage guide in a first direction and guided by a second stage guide in a second direction intersecting the first direction. A semiconductor element manufacturing method for manufacturing a semiconductor element, the method comprising: generating an electron beam; and moving the wafer stage so as to form an angle with the first direction and the second direction. Irradiating the wafer with light and exposing the wafer to light.