JP2002100583A - Heat treatment device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a heat treatment device capable of highly accurately measuring the temperature of a wafer by exactly detecting the intensity of light radiated from the wafer. SOLUTION: Most of light emitted from a lamp provided higher than a wafer W is shielded by a soaking ring 24 or shielding ring 40 but one part is made incident from a gap between the soaking ring 24 and the shielding ring 40. Such incident light reaches a reflection plane 50 and is reflected by the reflection plane 50. The reflection plane 50 is a flat slope formed at an angle a to the surface of a furnace wall 2a, and the incident light goes toward the lower surface of the shielding ring 40 by being reflected on the reflection plane 50. As a result, primary light reflected on the reflection plane 50 is prevented from being made incident to a radiation thermometer 30c or the like, and the radiation thermometer 30c or the like exactly detects the intensity of light radiated from the wafer W and can highly accurately measure the temperature of the wafer W.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for irradiating a semiconductor substrate, a glass substrate for a liquid crystal display, a glass substrate for a photomask, a substrate for an optical disk, and the like (hereinafter referred to as "substrate") housed in a chamber. The present invention relates to a heat treatment apparatus such as a lamp annealing apparatus for performing heat treatment by heating.

[0002]

2. Description of the Related Art Conventionally, in a manufacturing process of a substrate,
Various heat treatments have been performed. As a heat treatment apparatus for performing heat treatment on a substrate, for example, a rapid heating apparatus (so-called lamp annealing apparatus) for rapidly heating the substrate by light irradiation is used. In particular, as the demand for microfabrication of semiconductor devices and the like becomes more severe, a rapid heating process (RTP; Rapid Thermal P
rocess) is becoming important.

In general, a heat treatment apparatus such as a lamp annealing apparatus mainly uses an infrared halogen lamp as a heating source and irradiates light from the lamp in a predetermined gas atmosphere such as a nitrogen gas to thereby heat a substrate to a desired temperature in the order of seconds. (Up to 1200 ° C.), and after maintaining the substrate at that temperature for about several tens of seconds, the irradiation of light from the lamp is stopped to rapidly cool the substrate.

Such a lamp annealing apparatus can prevent re-diffusion of impurities due to heat in a bonding layer of a transistor formed on a substrate and can form an insulating film such as a thin oxide film. Processing that has been difficult to achieve by high-temperature heat treatment can be performed.

When heat treatment is performed in the lamp annealing apparatus, power supply to the lamp is controlled based on the measurement result while measuring the temperature of the substrate. Therefore, in order to perform an appropriate heat treatment, it is important to accurately measure the temperature of the substrate to be processed. In recent years, the temperature of the substrate has been measured in a non-contact manner by measuring the intensity of radiation emitted from the substrate. Temperature measurement using a radiation thermometer for measurement is becoming mainstream. As the radiation thermometer, for example, a pyrometer using a silicon photodiode having a measurement wavelength peak of 0.95 μm as a detection element is used, and is disposed on the opposite side of the substrate with respect to the lamp.

In order to perform accurate temperature measurement using a non-contact radiation thermometer, it is necessary to prevent radiation from a lamp from being incident on a radiation thermometer on the opposite side of the substrate with the substrate interposed therebetween. It is important to measure only the emitted light intensity. Conventionally, in order to prevent radiation from the lamp from being incident on the radiation thermometer, the lamp is formed by overlapping two rings, a soaking ring holding the substrate and a light-shielding ring having a larger diameter than the ring. To block light from entering the opposite side of the substrate.

[0007]

However, the conventional lamp annealing apparatus has the following problems. FIG. 5 is a diagram showing a part of a conventional lamp annealing apparatus.

The substrate W is held inside the chamber 110 by a heat equalizing ring 130. A lamp is arranged above the substrate W and the heat equalizing ring 130. Also,
A radiation thermometer 1 is provided below the substrate W and the soaking ring 130.
40 are arranged.

In the chamber 110, the heat equalizing ring 13
Above 0, a light blocking ring 120 is provided.
The outer diameter of the light shielding ring 120 is larger than the outer diameter of the heat equalizing ring 130, and the inner diameter of the light shielding ring 120 is
Smaller than the outer diameter of That is, when viewed from above, the inner peripheral portion of the light-shielding ring 120 and the outer peripheral portion of the heat equalizing ring 130 overlap with each other, so that the direct light from the lamp is supplied from the space between the heat equalizing ring 130 and the furnace wall 110a of the chamber 110 to the substrate. Of the radiation thermometer 140 is prevented.

However, a gap of about 1 mm is provided between the heat equalizing ring 130 and the light shielding ring 120 in the height direction. This is because the heat equalizing ring 130 and the substrate W rotate during the heat treatment, so that the heat equalizing ring 130 slightly moves up and down (the light shielding ring 120 is fixed to the chamber 110). This is to prevent the contact with H.130.

Further, in order to improve the light irradiation efficiency from the lamp, the substrate W is brought close to the lamp until the distance from the lamp becomes about 30 mm. For this reason, as shown in FIG. 5, light emitted from the outer peripheral end of the lamp and traveling at a relatively small angle with respect to the surface of the substrate W enters through the gap between the heat equalizing ring 130 and the light shielding ring 120. Then, the light is reflected by the furnace wall 110 a of the chamber 110, and the reflected light is incident on the radiation thermometer 140. When the reflected light from such a lamp is incident on the radiation thermometer 140, it becomes a disturbance, which causes a problem that the temperature of the substrate W cannot be measured accurately.

FIG. 6 is a diagram showing the correlation between the output of a radiation thermometer 140 using a silicon photodiode as a detecting element and the temperature of an object to be measured. Although the temperature of the object to be measured shown in the figure is strictly the temperature of the black body furnace, it is assumed here that the temperature is substantially equal to the temperature of the substrate W as the object to be measured. As shown in FIG. 6, the output of the radiation thermometer 140 increases as the temperature of the substrate W increases. Therefore, for example, when the heating and holding temperature of the substrate W is 400
When the temperature is relatively low, that is, between ℃ and 600 ° C., the output of the radiation thermometer 140 also becomes small. If even a small amount of light from the lamp enters the radiation thermometer 140, it becomes a large disturbance and the measurement accuracy is extremely reduced.

In order to minimize the light reflected by the furnace wall 110a, the heat equalizing ring 130 and the light shielding ring 1
It is conceivable to increase the overlapping portion with 20 or to raise the heat equalizing ring 130 and the light shielding ring 120 as a whole so that light incident from the gap between them does not reach the furnace wall 110a. However, soaking ring 1
When the overlapping portion between the light-shielding ring 120 and the light-shielding ring 120 is increased, a temperature gradient is generated in the heat equalizing ring 130, and the heat equalizing ring 130 is damaged by thermal stress. In addition, when the heat equalizing ring 130 and the light shielding ring 120 are raised as a whole, light goes around from the gap between the light shielding ring 120 and the chamber 110 and is incident on the radiation thermometer 140. Becomes The heat equalizing ring 130
It is impossible to reduce the gap between the light-shielding ring 120 and the light-shielding ring 120 for the above-described reason.

The present invention has been made in view of the above problems, and has as its object to provide a heat treatment apparatus capable of accurately detecting the intensity of light emitted from a substrate and measuring the substrate temperature with high accuracy. And

[0015]

According to a first aspect of the present invention, there is provided a heat treatment apparatus for performing heat treatment by irradiating light to a substrate housed in a chamber, the heat treatment apparatus being provided above the chamber. A light source that irradiates light from above the substrate, a radiation thermometer that is provided in the chamber below the substrate, and measures the temperature of the substrate by measuring the intensity of radiation emitted from the substrate, A substrate holding member that holds a substrate at a predetermined position in the chamber and shields light from the outside of an outer peripheral portion of the substrate, and is provided in the chamber above the substrate holding member, and the substrate holding member and A light-shielding member that shields light from the furnace wall of the chamber; and a primary reflection light of light that is formed on the furnace wall and that is incident from a gap between the substrate holding member and the light-shielding member. And a reflecting surface for directing the.

According to a second aspect of the present invention, in the heat treatment apparatus according to the first aspect, the reflection surface is an inclined surface formed at a predetermined angle with respect to a wall surface of the furnace wall.

According to a third aspect of the present invention, in the heat treatment apparatus according to the first aspect of the present invention, the reflecting surface is a concave surface whose cross-sectional shape is a part of an ellipse.

According to a fourth aspect of the present invention, in the heat treatment apparatus according to any one of the first to third aspects, the reflection surface is a mirror surface.

[0019]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a side sectional view showing the overall structure of a heat treatment apparatus according to the present invention. The heat treatment apparatus in FIG. 1 is a so-called lamp annealing apparatus that performs a rapid heating process on a substrate W by light irradiation. This heat treatment apparatus is roughly divided into an upper lamp house 1 and a lower chamber 2.

The lamp house 1 is provided with a plurality of lamps 12 and the same number of reflectors 6. Inside each of the reflectors 6, a hole for inserting a lamp is formed coaxially with the center axis thereof.
2 is inserted from above. Each lamp 12 is an infrared halogen lamp in which a halogen gas is sealed in a cylindrical quartz tube and a cylindrical filament 3 is provided in the vicinity of a central axis thereof, because of required irradiation intensity, lamp life, and limitations on manufacturability. I have. The filament 3 is arranged so that its longitudinal direction is along the central axis of the quartz tube. In addition, a filament 3 is provided above each lamp 12.
Is provided with a filament lead-out terminal 4 for supplying power. Each lamp 12 is provided above the chamber 2 and irradiates light from above the substrate W contained in the chamber 2 toward the substrate W.

The reflector 6 is a reflecting mirror having an elliptical spherical shape, and reflects light emitted from the lamp 12 downward (toward the substrate W). The light emitted from each of the lamps 12 irradiates the area directly below the lamps 12 by the reflector 6.

On the lower surface of the base plate 8 provided on the upper part of the lamp house 1, the upper end of the reflector 6 is fixed. Each lamp 12 is fixed to the base plate 8 via the mounting flange 5 so as to be coaxial with the central axis of the reflector 6. Further, a plurality of water cooling paths 7 are provided inside the base plate 8, and are configured to be able to cool heat transmitted from the lamps 12 to the base plate 8.

A processing chamber PR for performing a heat treatment of the substrate W is formed inside the chamber 2. Further, a furnace port 21 for carrying in / out the substrate is formed in the chamber 2, and a shutter 22 is provided outside the furnace port 21. The shutter 22 can be opened and closed by an opening and closing mechanism (not shown). In a state where the shutter 22 is opened, the unprocessed substrate W can be carried into the processing chamber PR from the furnace port 21 by the transfer mechanism (not shown), and the processed substrate W can be carried out of the processing chamber PR. it can. on the other hand,
In a state where the shutter 22 is closed (the state of FIG. 1), the shutter 22 and a chamber window 23 which will be described later are used.
As a result, the processing chamber PR is sealed via an O-ring (not shown), and the processing chamber PR becomes a sealed space.

Further, inside the chamber 2, a heat equalizing ring 24 for supporting the substrate W in the processing chamber PR and compensating for the heat emitted from the peripheral portion of the substrate W is rotatably provided. The heat equalizing ring 24 is an annular member made of sintered SiC having an outer diameter larger than the diameter of the substrate W,
It is fixedly supported by the support portion 24a via a quartz support 24b. A magnet 25 is fixed below the support portion 24a. An annular magnet ring 26 is provided on the lower side of the outside of the chamber 2 at a position facing the magnet 25. The magnet ring 26 meshes with the motor shaft of the motor 27, and rotates with the rotation of the motor 27.
The magnet ring 26 and the magnet 25 mutually exert an attractive force by a magnetic force, and when the magnet ring 26 rotates, the support portion 24a on which the magnet 25 is fixed and the heat equalizing ring 2
4 will also rotate. When the heat equalizing ring 24 rotates, the substrate W supported thereon also rotates in a horizontal plane. In addition, since the quartz support 24b connecting the support portion 24a and the heat equalizing ring 24 is a member made of quartz,
It transmits light in a measurement wavelength range such as a radiation thermometer 30a described later.

The heat equalizing ring 24 holds the substrate W at a predetermined position in the chamber 2 to perform thermal compensation on the peripheral edge thereof, and also has a function of shielding the outside of the outer peripheral portion of the substrate W, that is, a function of emitting light from the lamp 12. It has a function of blocking the emitted light from passing through the outer peripheral portion of the substrate W and reaching the lower side of the substrate W.

A chamber window 23 is provided inside the chamber 2 and above the processing chamber PR. Chamber window 2
Reference numeral 3 denotes a transparent quartz disk, which has a function of transmitting light emitted from the lamp 12 downward and sealing the processing chamber PR.

The chamber 2 is provided with a gas introduction port 28 and an exhaust port 29. The gas introduction port 28 and the exhaust port 29 are connected to a gas supply line and an exhaust line (not shown), respectively. Thus, a process gas such as a nitrogen gas and an oxygen gas can be supplied from the gas inlet 28 into the processing chamber PR, and the atmospheric gas in the processing chamber PR can be exhausted from the exhaust port 29.

A reflecting plate 35 is provided on the bottom of the chamber 2.
And radiation thermometers 30a, 30b, 30c. The reflection plate 35 can reflect light emitted from the substrate W. Radiated light (radiant energy) from substrate W
Repeats multiple reflection between the reflection plate 35 and the back surface of the substrate W, and passes through a hole 36 provided in the reflection plate 35 through the radiation thermometer 3.
0a, 30b, and 30c. Radiation thermometer 30a,
Reference numerals 30b and 30c are provided below the reflection plate 35, that is, in the chamber 2 and below the substrate W, so that the intensity of the radiated light from the substrate W incident by the multiple reflection is set in a wavelength range that transmits quartz. Thus, the temperature of the substrate W can be measured. As shown in FIG. 1, in this embodiment, three radiation thermometers 30a, 3
0c and 30b are provided to measure the temperature in the vicinity of the center of the substrate W, the temperature in the peripheral portion, and the temperature between them.

The furnace bottom of the chamber 2 can be moved up and down with respect to the main body of the chamber 2 by a lifting mechanism (not shown). Specifically, a metal bellows is provided between the main body of the chamber 2 and the furnace bottom so that the metal bellows contracts when the furnace bottom is raised by the elevating mechanism, and expands when the furnace bottom is lowered. What is necessary is just to maintain the hermetically sealed state in the chamber 2. When the furnace bottom moves up and down, the reflecting plate 35, the motor 27, the support portion 24a, the quartz support 24b, the heat equalizing ring 24, and the substrate W held thereon move up and down.

Further, in the heat treatment apparatus of the present embodiment, a light shielding ring 40 is provided in the chamber 2. Shading ring 4
Reference numeral 0 denotes an annular plate member made of ceramics, which is directly fixed to the chamber 2 via a quartz pin (not shown). The light shielding ring 40 is provided in the chamber 2 and above the heat equalizing ring 24, and is provided so as to cover between the heat equalizing ring 24 and the furnace wall of the chamber 2. Since the light shielding ring 40 is fixed to the chamber 2, it does not move up and down even when the furnace bottom moves up and down.
Also, the motor 27 does not rotate.

Although the schematic structure of the heat treatment apparatus according to the present invention has been described above, the heat treatment apparatus described above further forms a reflection surface on the furnace wall of the chamber 2 so that the light from the lamp 12 emits radiation thermometers 30a, 30b, 30c is prevented as much as possible. Hereinafter, formation of the reflection surface will be further described. In this embodiment, the lamp 12 serves as a light source, the heat equalizing ring 24 serves as a substrate holding member, and the light blocking ring 40 serves as a light shielding ring.
Correspond to the light shielding members.

FIG. 2 is a partially enlarged view of the heat treatment apparatus of FIG. As described above, the light shielding ring 40 is
4 and the furnace wall 2 a of the chamber 2. The outer diameter of the light shielding ring 40 is larger than the outer diameter of the heat equalizing ring 24, and the inner diameter of the light shielding ring 40 is
Smaller than the outer diameter of Heat equalizing ring 24 and light shielding ring 40
The size t1 of the gap in the height direction between them is about 1 mm. This gap is essential to prevent the heat equalizing ring 24 from moving up and down and coming into contact with the light blocking ring 40 when the heat equalizing ring 24 is rotated by the motor 27. The size t2 of the overlap between the heat equalizing ring 24 and the light shielding ring 40 when viewed from above is about 2 mm. If the size of the overlap margin t2 is excessively large, a steep temperature gradient is generated in the heat equalizing ring 24 when light is irradiated from the lamp 12, and the heat equalizing ring 24 may be damaged by thermal stress caused by the temperature gradient. Further, a gap of about 0.5 mm is provided between the light shielding ring 40 and the chamber 2. This gap prevents breakage of the light-shielding ring 40 due to a difference in thermal expansion between the ceramic light-shielding ring 40 and the metal (for example, stainless steel) chamber 2 and improves gas replacement efficiency in the processing chamber PR. It is provided for the purpose.

The reflecting surface 50 is a part of the furnace wall 2a of the chamber 2 and below the light shielding ring 40.
Are formed over the entire circumference. In the present embodiment, the reflecting surface 50 is a flat inclined surface formed at an angle α with respect to the wall surface of the furnace wall 2a. Further, the reflection surface 5
0 is a mirror surface by mirror finishing. This reflection surface 5
0 prevents light incident from between the light blocking ring 40 and the soaking ring 24 from going to the radiation thermometers 30a, 30b, 30c, which will be further described later.

Here, the outline of the processing procedure in the above-described heat treatment apparatus will be briefly described. First, the exhaust port 29
From the gas inlet 28 and the processing chamber PR.
To the processing chamber P
The inside of R is replaced with an inert gas atmosphere. Then, the shutter 22 is opened, the unprocessed substrate W is carried in from the furnace port 21, and placed on the heat equalizing ring 24. Next, the shutter 22 is closed to close the furnace port 21, and at the same time, a predetermined process gas is introduced from the gas inlet port 28, and the periphery of the substrate W in the processing chamber PR is replaced with the atmosphere of the process gas.

Thereafter, power supply to the lamp 12 is started, and light irradiation from the lamp 12 is performed. The light emitted from the lamp 12 passes through the chamber window 23 and reaches the substrate W accommodated in the chamber 2, and rapidly heats the substrate W. When irradiating light from the lamp 12, the motor 2
7, the substrate W is rotated. During light irradiation, the substrate W is rotated and the radiation thermometers 30a,
The temperature of the substrate W is measured by 0b and 30c, and the amount of power supplied to the lamp 12 is feedback-controlled based on the measurement result.

After that, when a predetermined time has elapsed and the heating process of the substrate W is completed, the light irradiation from the lamp 12 is stopped. Then, an inert gas is supplied from the gas inlet 28 to the processing chamber PR. Finally, open the shutter 22 and open the furnace
1 is released, the processed substrate W is carried out of the apparatus, and a series of heat treatments is completed.

In such a series of heat treatment steps, when the light from the lamp 12 is irradiated, most of the light from the lamp 12 is shielded by the substrate W, the soaking ring 24 and the light shielding ring 40, and the radiation thermometers 30a, 30b, 30c, but the heat equalizing ring 24 and the light shielding ring 40
There is a case where light is incident from a gap in the height direction between the light emitting element and the light emitting element.
Since there is an overlap between the outer peripheral portion of the heat equalizing ring 24 and the inner peripheral portion of the light shielding ring 40, the light emitted from the lamp 12 forms a relatively large angle with the surface (horizontal plane) of the substrate W in the light emitted from the lamp 12. Thus, the light that has proceeded can be shielded to prevent incidence on the lower side of the substrate W. However, the heat equalizing ring 24 and the light shielding ring 40
And a gap of a predetermined size exists between them, and this cannot be eliminated. As a result, of the light emitted from the lamp 12, the light traveling at a relatively small angle with the surface of the substrate W is inevitably incident from the gap between the heat equalizing ring 24 and the light shielding ring 40. For example, in FIG. 1, of the light emitted from the rightmost lamp 12, the light traveling at a relatively small angle with respect to the surface of the substrate W enters through the gap on the left side in the figure.

FIG. 3 shows the heat equalizing ring 24 and the light shielding ring 40.
FIG. 4 is a diagram showing the behavior of light that has entered from a gap between. Light incident from a gap between the heat equalizing ring 24 and the light blocking ring 40 reaches the reflecting surface 50 and is reflected by the reflecting surface 50. The reflection surface 50 is a flat inclined surface formed at an angle α with respect to the wall surface of the furnace wall 2a, and light incident from a gap between the heat equalizing ring 24 and the light shielding ring 40 is reflected by the reflection surface 50.
The light is reflected toward the lower surface of the light shielding ring 40. Here, the reflection surface 50 is the most scattered light from the light (the light indicated by the solid line in FIG. 3) which forms the largest angle with the surface of the substrate W among the light incident from the gap between the heat equalizing ring 24 and the light shielding ring 40. The furnace wall 2a is formed so that all the light up to light forming a small angle (light indicated by a dotted line in FIG. 3) reaches. Therefore, all light incident from the gap between the heat equalizing ring 24 and the light shielding ring 40 is reflected by the reflection surface 50 and travels toward the lower surface of the light shielding ring 40.

That is, the heat equalizing ring 24 and the light shielding ring 4
The primary reflected light by the reflecting surface 50 of all the light incident from the gap between 0 and 0 goes to a position other than the radiation thermometers 30a, 30b, and 30c. The “primary reflected light” by the reflecting surface 50 means the reflected light in which the incident light is first reflected by the reflecting surface 50. Therefore, at least one of the light incident from the gap between the heat equalizing ring 24 and the light-shielding ring 40.
The next reflected light is prevented from being incident on the radiation thermometers 30a, 30b, 30c, and as a result, the radiation thermometers 30a, 30c
b and 30c can accurately detect the intensity of the emitted light from the substrate W and measure the temperature of the substrate W with high accuracy.

However, the light is reflected by the reflecting surface 50,
After the primary reflected light directed to the lower surface of the light blocking ring 40 repeats multiple reflections, the radiation thermometers 30a, 30b,
30c. However, since the light after repeating such multiple reflections is sufficiently attenuated, its intensity is reduced to a negligible level as compared with the intensity of the primary reflected light, and the radiation thermometers 30a, 30b , 30c has little effect on the temperature measurement of the substrate W.

In this embodiment, the reflecting surface 50 is used.
Are mirror-finished by mirror finishing. Therefore, light incident from the gap between the heat equalizing ring 24 and the light shielding ring 40 is prevented from being irregularly reflected by the reflection surface 50.
If the light incident from the gap between the heat equalizing ring 24 and the light shielding ring 40 is irregularly reflected by the reflecting surface 50, 1
The traveling direction of the next reflected light is dispersed in multiple directions, a part of which is directly incident on the radiation thermometers 30a, 30b, 30c and
May affect the temperature measurement of However, if the reflecting surface 50 is a mirror surface as in the present embodiment, irregular reflection of light incident from the gap between the heat equalizing ring 24 and the light shielding ring 40 is prevented, and the primary reflected light is emitted from the radiation thermometer 30.
a, 30b, and 30c. As a result, the temperature of the substrate W can be measured with higher accuracy.

Although the embodiment of the present invention has been described above, the present invention is not limited to the above example.
For example, in the above embodiment, the reflecting surface 50 is
a is a flat inclined surface formed at an angle α with respect to the wall surface of the reflective surface 5a, but is not limited thereto.
0 may be changed as shown in FIG.

FIG. 4 is a view showing another example of the reflection surface 50. As shown in FIG. As in the above embodiment, the reflecting surface 50 is
And is formed over the entire circumference of the chamber 2 below the light blocking ring 40. In FIG. 4, the reflection surface 50 is a concave surface whose cross-sectional shape becomes a part of an ellipse. Further, similarly to the above embodiment, the reflection surface 50 is mirror-finished by mirror finishing. Even in this case, all light incident from the gap between the heat equalizing ring 24 and the light shielding ring 40 is reflected by the reflection surface 50 and travels toward the lower surface of the light shielding ring 40. Therefore, similarly to the above-described embodiment, at least the primary reflected light of the light incident from the gap between the heat equalizing ring 24 and the light shielding ring 40 is prevented from being incident on the radiation thermometers 30a, 30b, 30c. As a result, the radiation thermometers 30a, 30b, and 30c can accurately detect the intensity of the radiated light from the substrate W and measure the temperature of the substrate W with high accuracy.

That is, the shape of the reflecting surface 50 is such that the primary reflected light of all the light incident from the gap between the heat equalizing ring 24 and the light shielding ring 40 is emitted by the radiation thermometers 30a, 30b, 30c.
Any shape may be used as long as the light can be directed to a position other than the radiation thermometers 30a, 30b, and 30c. Of course, it is easiest to form the reflecting surface 50 as a flat inclined surface, and the reflecting surface 5 can be appropriately adjusted within the range of restrictions on the relative relationship with other members.
The shape and size of 0 may be determined.

In the above embodiment, the lamp 1
Although 2 is a point light source lamp, the shape and arrangement of the lamp 12 may be any form, for example, a straight tube lamp or a circle lamp.

Further, in the above embodiment, the heat treatment apparatus is a lamp annealing apparatus. However, the heat treatment apparatus according to the present invention is not limited to the lamp annealing apparatus. Any device can be used as long as it measures the intensity of the emitted light to measure the substrate temperature.

[0048]

As described above, according to the first aspect of the present invention, the primary reflection light of the light incident from the gap between the substrate holding member and the light shielding member is directed to a position other than the radiation thermometer. Surface, it is possible to prevent at least the primary reflected light of the light incident from the gap between the substrate holding member and the light shielding member from being incident on the radiation thermometer. The intensity of the emitted light can be accurately detected, and the temperature of the substrate can be measured with high accuracy.

According to the second aspect of the present invention, since the reflecting surface is an inclined surface formed at a predetermined angle with respect to the wall surface of the furnace wall, the processing of the reflecting surface can be easily performed.

According to the third aspect of the present invention, since the reflecting surface is a concave surface whose cross-sectional shape is a part of an ellipse,
The processing of the reflection surface can be easily performed.

According to the fourth aspect of the present invention, since the reflecting surface is a mirror surface, irregular reflection of light incident from the gap between the substrate holding member and the light shielding member is prevented, and the primary reflected light is radiated temperature. Go to a position other than the total.

[Brief description of the drawings]

FIG. 1 is a side sectional view showing an overall configuration of a heat treatment apparatus according to the present invention.

FIG. 2 is a partially enlarged view of the heat treatment apparatus of FIG.

FIG. 3 is a diagram illustrating a behavior of light incident from a gap between a heat equalizing ring and a light shielding ring.

FIG. 4 is a diagram showing another example of the reflection surface.

FIG. 5 is a view showing a part of a conventional lamp annealing apparatus.

FIG. 6 is a diagram showing a correlation between an output of a radiation thermometer and a temperature of an object to be measured.

[Explanation of symbols]

 2 Chamber 2a Furnace wall 12 Lamp 24 Heat equalizing ring 30a, 30b, 30c Radiation thermometer 40 Light blocking ring 50 Reflective surface W Substrate

Claims (4)

[Claims] 1. A heat treatment apparatus for performing heat treatment by irradiating light to a substrate housed in a chamber, wherein the light source is provided above the chamber and irradiates light from above the substrate. A radiation thermometer that is provided below the substrate and measures the temperature of the substrate by measuring the intensity of the radiated light from the substrate; and holding the substrate at a predetermined position in the chamber.
A substrate holding member that shields the outside of the outer peripheral portion of the substrate from light; a light shielding member that is provided in the chamber and above the substrate holding member, and shields light between the substrate holding member and a furnace wall of the chamber. A reflecting surface formed on the furnace wall and for directing primary reflected light of light incident from a gap between the substrate holding member and the light shielding member to a position other than the radiation thermometer. Heat treatment equipment. 2. The heat treatment apparatus according to claim 1, wherein the reflection surface is an inclined surface formed at a predetermined angle with respect to a wall surface of the furnace wall. 3. The heat treatment apparatus according to claim 1, wherein the reflection surface is a concave surface whose cross-sectional shape is a part of an ellipse. 4. The heat treatment apparatus according to claim 1, wherein the reflection surface is a mirror surface.