JP2002168716A - Pressure sensor module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a miniaturized pressure sensor module. SOLUTION: Among three chips, that is, a semiconductor pressure sensor part 1 having a diaphragm part 1a displaceable by pressure and having the function of detecting the pressure based on the displacement of the diaphragm part 1a, an IC part 2 having the function of controlling the sensor part 1, and a ROM mounting part 3 having the trimming function of correcting the characteristics of the sensor part 1, two chips excluding a chip having an electrical connection part are mounted so that the outside dimension of the surface of the latter falls within the dimension of the largest chip, and the sensor part 1 is mounted so that the diaphragm part 1a of the sensor part 1 is displaced by the pressure from a first pressure inlet hole 9a.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pressure module for detecting pressure.

[0002]

2. Description of the Related Art A semiconductor pressure sensor unit 1, an IC unit 2,
FIG. 11 shows an example of a conventional pressure sensor module in which three chip portions of the ROM mounting section 3 are mounted on a package. FIG. 11A is a sectional view of the pressure sensor module, and FIG. 11B is a top view of the pressure sensor module with the cover 7 removed. In a package having a synthetic resin body part 6 and a cover part 7,
The semiconductor pressure sensor unit 1, the IC unit 2, and an R having a trimming function for correcting characteristics of the semiconductor pressure sensor unit 1.
The OM mounting section 3 is mounted and mounted at different locations on the chip mounting surface 6a of the body section 6.

First, the semiconductor pressure sensor unit 1 will be described. As shown in the enlarged view of FIG. 11A, a thin-walled diaphragm portion 1a is formed by etching one main surface of a semiconductor substrate (silicon substrate). A piezoresistor 1c whose resistance value changes due to bending and an electrode 1d made of metal are formed on the surface of the diaphragm portion 1a, and the displacement and bending of the diaphragm portion 1a due to external pressure can be measured by changing the resistance value or changing the electrostatic force. As a change in capacity, a method of detecting pressure is used. Here, the detection method is not particularly limited.

As described above, the package has the body portion 6 and the cover portion 7, and the first pressure introduction hole 9 a formed in a substantially cylindrical shape from the bottom of the substantially box-shaped body portion 6. Is formed. The semiconductor pressure sensor unit 1 includes a support unit 1 that does not include the diaphragm unit 1 a on a chip mounting surface 6 a facing the cover unit 7 in a space 8 formed by the body unit 6 and the cover unit 7.
b is disposed so as to surround the first pressure introducing hole 9a as shown in FIG. The space formed by the lower portion of the semiconductor pressure sensor unit 1 and the portion above the chip mounting surface 6a is the diaphragm unit 1 of the semiconductor pressure sensor unit 1.
A hole space 9e for introducing a pressure to a is formed.

Here, the center axis of the hole space 9e coincides with the center axis of the first pressure introducing hole 9a, and the pressure of the pressure-detected fluid passes through the first pressure introducing hole 9a and the hole space 9e and the diaphragm. It is led to the unit 1a. As a result, the diaphragm 1a receives stress, and the pressure is detected by the displacement of the diaphragm 1a.

[0006] The IC unit 2 includes a semiconductor pressure sensor unit 1.
The ROM mounting section 3 is mounted on the chip mounting surface 6a adjacent to the IC section 2. The semiconductor pressure sensor unit 1 and the IC unit 2 are electrically connected by a bonding wire 10 (hereinafter, referred to as a wire 10) made of gold, aluminum, or the like. The IC section 2 and the ROM mounting section 3 are electrically connected by wires 10. Further, the semiconductor pressure sensor section 1 and the lead 11 implanted by insert molding and provided on the body section 6 are electrically connected by another wire 10, and the ROM mounting section 3 and the lead 11 are electrically connected. On the upper surface of the diaphragm 1a of the semiconductor pressure sensor 1, a jelly-like sealing resin 30 for protecting the surface such as JCR (junction coat resin) is provided.
Is provided.

FIG. 11B shows the wiring state of the wire 10.
Shown in Here, the semiconductor pressure sensor unit 1 exemplifies a method of detecting a pressure signal by detecting the displacement of the diaphragm unit 1a by a change in the resistance value of a piezo resistor 1c. Four piezoresistors 1c are arranged in the central part of the semiconductor pressure sensor part 1, that is, in the vicinity of the upper surface part of the diaphragm part 1a. Further, an electrode 1d is formed around the semiconductor pressure sensor unit 1 for outputting a pressure signal and performing control such as applying a voltage to a circuit formed with the piezoresistor 1c. Electrode 1d of this semiconductor pressure sensor unit 1
And the electrodes 2a of the IC unit 2 are electrically connected by wires 10, and the electrodes 2a of the IC unit 2 and the electrodes 3a of the ROM mounting unit 3 are electrically connected by wires 10.

The electrical connection between the electrode 1d of the semiconductor pressure sensor unit 1 and the lead 11 and the connection of the electrode 2a of the IC unit 2
And the leads 11 are electrically connected.

With the above configuration and electric wiring, the first
The pressure of the fluid to be measured transmitted to the pressure introducing hole 9a is detected by the semiconductor pressure sensor unit 1, and the detected pressure signal is I
The signal is processed by the C section 2 and output to an external circuit (not shown) by the lead 11. The semiconductor pressure sensor unit 1 includes:
Controlled by the IC section 2, soft characteristic correction (electronic trimming) is performed by the ROM mounting section 3.

[0010]

However, in the above-described pressure sensor module, since the electrical connection of each chip is performed by wire bonding, the pressure sensor module meets the need for further downsizing of the pressure sensor module. In doing so, arranging the semiconductor pressure sensor unit 1, the IC unit 2, and the ROM mounting unit 3 on a plane has a limit in reducing the chip mounting area.

The present invention has been made to solve the above problems, and has as its object to provide a downsized pressure sensor module.

[0012]

According to a first aspect of the present invention, there is provided a pressure sensor module comprising: a semiconductor pressure sensor having a diaphragm portion that is displaced by pressure and having a function of detecting pressure by displacement of the diaphragm portion. Unit 1, an IC unit 2 having a function of controlling the semiconductor pressure sensor unit 1, a ROM mounting unit 3 having a trimming function of correcting characteristics of the semiconductor pressure sensor unit 1, and the semiconductor A first sensor for mounting a pressure sensor unit, the IC unit, and the ROM mounting unit, and introducing pressure to the diaphragm unit;
In a pressure sensor module including a package having a pressure introduction hole 9a, an electrical connection portion is provided among three chips of the semiconductor pressure sensor portion 1, the IC portion 2, and the ROM mounting portion 3. The other two chips are mounted so that the outer size of the chip surface is within the largest chip size, and the diaphragm 1a of the semiconductor pressure sensor unit 1 is displaced by receiving the pressure from the first pressure introduction hole 9a. Thus, the semiconductor pressure sensor unit 1 is mounted.

Further, in the pressure sensor module according to the present invention, the semiconductor pressure sensor unit 1, the IC unit 2, and the ROM mounting unit 3 are connected to each other.
The two chips are stacked and mounted in order from the chip mounting surface 6a of the package to form a lowermost chip, an intermediate chip, and an uppermost chip.

According to a third aspect of the present invention, there is provided the pressure sensor module according to the first aspect, wherein the semiconductor pressure sensor unit, the IC unit, and the ROM mounting unit are connected to each other.
One of the chips has the largest external size of the chip surface having the electrical connection portion, and the other two chips are mounted so as to be arranged side by side.

The pressure sensor module according to a fourth aspect of the present invention is the pressure sensor module according to the first aspect.
And the ROM mounting section 3 are laminated to form a laminated section 20. The laminated section 20 penetrates the laminated section 20 and the first
A housing 21 that communicates with the pressure introducing hole 9a, and the diaphragm 1a of the semiconductor pressure sensor unit 1 is displaced in the housing 21 by receiving the pressure from the first pressure introducing hole 9a. The semiconductor pressure sensor unit 1 is mounted so as to surround the first pressure introducing hole 9a.

According to a fifth aspect of the present invention, in the pressure sensor module according to the first aspect of the present invention, the IC unit includes:
Alternatively, one of the chips of the ROM mounting section 3 forms a lowermost chip with respect to the chip mounting surface 6a of the package, and the lowermost chip penetrates the lowermost chip to form the first chip. The semiconductor pressure sensor unit 1 is mounted on the lowermost chip so as to surround the second pressure introduction hole 9b, and the second pressure introduction hole 9b communicates with the pressure introduction hole 9a. On the top surface of the bottom chip,
The other chip provided with an accommodating portion 21 capable of accommodating the semiconductor pressure sensor unit 1 is mounted on a portion where the semiconductor pressure sensor unit 1 is not mounted.

According to a sixth aspect of the present invention, there is provided a pressure sensor module according to any one of the first to fifth aspects, wherein the semiconductor pressure sensor unit, the IC unit, and the ROM mounting unit are provided. The electrical connection portion is characterized in that electrical connection is performed by using both the bump 4 and the TAB 5.

According to a seventh aspect of the present invention, in the pressure sensor module according to any one of the first to fifth aspects, the electric pressure of the semiconductor pressure sensor section, the IC section, and the ROM mounting section is changed. The connection portion is characterized by performing electrical connection by using both the bump 4 and the bonding wire 10.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The premise of the present invention will be described below with reference to FIG.
1 will be described, but a detailed description has been given above and will not be repeated.

FIG. 11 shows a piezoresistor 1c in which a resistance value changes due to bending of a surface of a diaphragm portion 1a in a package having a body portion 6 and a cover portion 7 made of synthetic resin.
A semiconductor pressure sensor unit 1 having electrodes 1d made of metal or metal, an IC unit 2, and a ROM mounting unit 3 having a trimming function for correcting characteristics of the semiconductor pressure sensor unit 1 The pressure sensor module is configured to be mounted and mounted at different locations on the chip mounting surface 6a. The pressure of the fluid to be measured transmitted to the first pressure introducing hole 9a is controlled by the IC unit 2 and is detected by the semiconductor pressure sensor unit 1 in which the ROM mounting unit 3 performs soft characteristic correction (electronic trimming). The output pressure signal is the IC unit 2
, And is output to an external circuit (not shown) by the lead 11. In each of the following embodiments of the present invention, since the basic operation is the same as that of the above-described pressure sensor module, the description of the operation is omitted. The semiconductor pressure sensor unit 1 has an electrode 1d made of metal, a piezoresistor 1c, and the like on the surface of the diaphragm unit 1a, but these are not shown in the following first to tenth embodiments for convenience. I do. In addition, the following first embodiment to first embodiment
In the zero embodiment, the shape of the body 6 constituting the package is changed depending on the size of the chip.

First, in the following first to fourth embodiments, the semiconductor pressure sensor unit 1 and the IC are mounted so that the chip size can be accommodated in the chip having the largest external size of the chip surface having the electrical connection unit. 3 shows an example of a type in which three chips of a unit 2 and a ROM mounting unit 3 are stacked and mounted.

Hereinafter, a first embodiment of the present invention will be described with reference to FIG. FIG. 1 is a cross-sectional view showing a pressure sensor module according to a first embodiment of the present invention (a semiconductor pressure sensor unit 1, an IC unit 2, and an R unit with respect to a chip mounting surface 6a of a package).
This mainly shows the arrangement state of the OM mounting unit 3 and does not show details of the cover and the body of the package).

As shown in FIG. 1, with respect to the chip mounting surface 6a of the package, the semiconductor pressure sensor section 1 applies a first pressure so that the diaphragm section 1a is displaced by receiving a pressure from the first pressure introducing hole 9a. It is mounted on the lowermost chip so as to surround the introduction hole 9a. The IC section 2 is mounted on the middle chip which is the upper surface of the lowermost chip, and the IC chip 2 is mounted on the uppermost chip which is the upper surface of the middle chip.
This is a configuration in which the mounting unit 3 is mounted.

On both upper and lower surfaces of the IC unit 2, electrodes (not shown) made of metal and wiring patterns (not shown) for making electrical contact with the electrodes are formed. Through wiring 14 electrically connected to (not shown)
Is provided. An electrode (not shown) made of metal is provided on the lower surface of the ROM mounting section 3. The electrical connection part refers to these electrodes and wiring patterns.

Electrodes of semiconductor pressure sensor unit 1 (not shown)
And the through wiring 14 of the IC part 2 are electrically connected by the bump 4. The wiring pattern (not shown) of the IC section 2 and the electrodes (not shown) of the ROM mounting section 3 are electrically connected by bumps 4, and the semiconductor pressure sensor section 1, the IC section 2 and the ROM mounting section are mounted. The electrical connection with the unit 3 is established. The electrodes (not shown) of the IC section 2 and the leads 11 implanted by insert molding are connected to the bumps 4 and TAB.
(TAPE AUTOMATED BONDING) 5
Are electrically connected to each other.

In such a pressure sensor module,
Electrical connection using the bump 4 and the TAB 5 is performed, and the semiconductor pressure sensor unit 1 and the ROM mounting unit 3 are stacked so as to fit in the IC unit 2 having the largest external size of the chip surface having the electrical connection unit. With such a three-dimensional arrangement, the chip mounting area can be reduced.

Hereinafter, a second embodiment of the present invention will be described with reference to FIG. FIG. 2 is a sectional view showing a pressure sensor module according to a second embodiment of the present invention. In the second embodiment, the electrical connection between the IC unit 2 and the lead 11 is made by wire bonding in the first embodiment, and therefore, the description of the common parts with the first embodiment will be omitted.

As shown in FIG. 2, the through wiring 1 of the IC section 2
The wires 4 and the leads 11 are electrically connected by wires 10.

In such a pressure sensor module,
Electrical connection using the bumps 4 and the wires 10 is performed, and the semiconductor pressure sensor unit 1 and the ROM mounting unit 3 are stacked so as to fit in the IC unit 2 having the largest external size of the chip surface having the electrical connection unit. By arranging the chips three-dimensionally, the chip mounting area can be reduced.

Hereinafter, a third embodiment of the present invention will be described with reference to FIG. FIG. 3 is a sectional view showing a pressure sensor module according to a third embodiment of the present invention. The third embodiment is different from the first embodiment in that the IC unit 2 and the ROM mounting unit 3
Since the electrical connection method with the first embodiment has been changed, the description of the common parts with the first embodiment will be omitted.

An electrode (not shown) made of metal and a wiring pattern (not shown) for making electrical contact with the electrode are provided on the lower surface of the IC section 2. On the upper surface of the ROM mounting section 3, an electrode (not shown) made of metal is provided.

As shown in FIG. 3, the semiconductor pressure sensor 1
The electrodes (not shown) of the IC section 2 and the electrodes (not shown) of the IC section 2 are electrically connected by bumps 4. Also, IC
The electrode (not shown) of the portion 2 and the lead 11 are electrically connected by the bump 4 and the TAB 5. ROM mounting part 3
The electrodes (not shown) and the leads 11 are electrically connected by wires 10.

In such a pressure sensor module,
Electrical connection using bumps 4, TABs 5, and wires 10 is performed, and the semiconductor pressure sensor unit 1, the IC unit 2, and the ROM mounting unit 3 are connected to the IC unit 2 having the largest external size of the chip surface having the electrical connection unit. By three-dimensionally arranging the chips so as to fit them, the chip mounting area can be reduced.

Here, in the first to third embodiments, the example of the chip stacking method has been described in which the middle chip is the IC section 2 and the uppermost chip is the ROM mounting section 3. Of course, the middle chip may be the ROM mounting section 3 and the uppermost chip may be the IC section 2.

Hereinafter, a fourth embodiment of the present invention will be described with reference to FIG. FIG. 4 is a sectional view showing a pressure sensor module according to a fourth embodiment of the present invention.

As shown in FIG. 4, with respect to the chip mounting surface 6a of the package, the ROM mounting section 3 is the lowermost chip, the IC section 2 is an intermediate chip, and the ROM mounting section 3 and the IC section. A communication pressure introducing hole 9c penetrating through the second pressure introducing hole 9a and communicating with the first pressure introducing hole 9a is provided, and the diaphragm 1a of the semiconductor pressure sensor unit 1 is displaced by receiving the pressure from the communication pressure introducing hole 9c. 1 is mounted on the upper surface of the IC unit 2 so as to surround the communication pressure introducing hole 9c. The communication pressure introduction hole 9c is provided so that the central axis of the communication pressure introduction hole 9c and the central axis of the first pressure introduction hole 9a coincide, and the pressure applied to the first pressure introduction hole 9a passes through the communication pressure introduction hole 9c. The configuration is such that the portion between the ROM mounting unit 3 and the IC unit 2 is closed so as not to drop during the operation.

The connecting portion between the communication pressure introducing hole 9c and the first pressure introducing hole 9a of the body portion 6 is configured to be continuous without any step. For this reason, when the non-measurement object is a liquid, it is possible to prevent air (bubbles) from remaining at the connection portion. For this reason, it is possible to prevent the air from contracting due to the pressure and hindering accurate measurement of the liquid pressure.

On both upper and lower surfaces of the IC portion 2, electrodes (not shown) made of metal and wiring patterns (not shown) for making electrical contact with the electrodes are formed. Through wiring 14 electrically connected to (not shown)
Is provided. On the upper surface of the ROM mounting section 3, an electrode (not shown) made of metal is provided.

Electrodes of semiconductor pressure sensor 1 (not shown)
The wire 10 is electrically connected to the through wiring 14 of the IC unit 2. RO and the through wiring 14 of the IC unit 2
The electrodes (not shown) of the M mounting section 3 are electrically connected by bumps 4. Also, the through wiring 1 of the IC unit 2
The wires 4 and the leads 11 are electrically connected by wires 10. On the upper surface of the diaphragm 1a of the semiconductor pressure sensor 1, a jelly-like sealing resin 30 for protecting the surface such as JCR (junction coat resin) is provided.

In such a pressure sensor module,
Electrical connection using the bumps 4 and the wires 10 is performed so that the semiconductor pressure sensor unit 1 is accommodated in a chip (IC unit 2, ROM mounting unit 3) having the largest external size of the chip surface having the electrical connection unit. The three-dimensional arrangement can reduce the mounting area of the chip.

Here, in the fourth embodiment, in the method of stacking chips, the lowermost chip is the ROM mounting portion 3,
Although the example in which the chip in the middle is the IC unit 2 is shown, the lowermost chip is the ROM mounting unit 3 and the chip in the middle is R
Of course, the OM mounting section 3 may be used. Further, the communication pressure introducing hole 9c may be tapered or may be formed of a plurality of holes. In particular, the communication pressure introduction hole 9c
When is formed with a plurality of holes, a sudden pressure can be relieved and the pressure sensor module can be prevented from being broken.

The semiconductor pressure sensor unit 1, the IC unit 2,
The example in which the ROM mounting sections 3 are mounted so as to be stacked is not limited to those described in the first to fourth embodiments. For example, the semiconductor pressure sensor section 1 may A communication pressure introducing hole (not shown) which penetrates the lowermost chip (the IC unit 2 or the ROM mounting unit 3) and penetrates the lowermost chip and communicates with the first pressure introducing hole 9a. The semiconductor pressure sensor is provided such that the central axis of the pressure introducing hole coincides with the central axis of the first pressure introducing hole 9a, and the diaphragm 1a of the semiconductor pressure sensor unit 1 is displaced by receiving the pressure from the communication pressure introducing hole. The pressure sensor unit 1 is mounted on the upper surface of the lowermost chip so as to surround the communication pressure introducing hole, and the other is disposed on the upper surface of the semiconductor pressure sensor unit 1 (an intermediate chip, a chip not used in the lowermost chip). Equipped with Of course it may be of a configuration like.

In the following fifth to eighth embodiments, a semiconductor pressure sensor unit 1, an IC unit 2, a ROM mounting unit 3
Of the three chips, the two chips are mounted side by side on the chip having the largest external size of the chip surface having the electrical connection portion, and the chip having the largest external size of the chip surface having the electrical connection portion is provided. Fig. 1 shows an example of a type that accommodates the chip size.

Hereinafter, a fifth embodiment of the present invention will be described with reference to FIG. FIG. 5 is a sectional view showing a pressure sensor module according to a fifth embodiment of the present invention.

FIG. 5 shows that one lowermost chip and two uppermost chips are formed in this order from the chip mounting surface 6a of the package, and the two uppermost chips are arranged side by side on one lowermost chip. This is a case where it is mounted as follows. The chip having the largest outer surface size of the chip surface having the electrical connection portion is the IC portion 2 (the lowermost chip), and the IC portion 2 communicates with the first pressure introducing hole 9a through the IC portion 2. The pressure introducing hole 9d is provided so that the central axis of the communication pressure introducing hole 9d and the central axis of the first pressure introducing hole 9a coincide with each other, and the diaphragm 1a of the semiconductor pressure sensor unit 1 applies pressure from the communicating pressure introducing hole 9d. The semiconductor pressure sensor section 1 is mounted on the upper surface of the IC section 2 so as to be displaced in response to the pressure and surrounding the communication pressure introducing hole 9d. Further, a ROM mounting section 3 is mounted on a portion of the upper surface of the IC section 2 where the semiconductor pressure sensor section 1 is not mounted.

The connecting portion between the communication pressure introduction hole 9d and the first pressure introduction hole 9a of the body 4 is configured to be continuous without any step, and the effect as described in the fourth embodiment can be obtained. Can be

An electrode (not shown) made of metal and a wiring pattern (not shown) for making electrical contact with the electrode are provided on the upper surface of the IC section 2. On the upper surface of the ROM mounting section 3, an electrode (not shown) made of metal is provided.

Electrodes of semiconductor pressure sensor unit 1 (not shown)
And an electrode (not shown) of the ROM mounting section 3 is connected to a wire 10
Thus, an electrical connection is made with an electrode (not shown) of the IC unit 2. Further, an electrode (not shown) of the IC unit 2 and the lead 11 are electrically connected by a wire 10. Further, the diaphragm part 1a of the semiconductor pressure sensor part 1
A jelly-shaped sealing resin 30 for protecting the surface such as a JCR (junction coat resin) is provided on the upper surface.

In such a pressure sensor module,
The electrical connection using the wire 10 is performed, and the semiconductor pressure sensor unit 1 and the ROM mounting unit 3 are three-dimensionally arranged so as to fit in the IC unit 2 having the largest external size of the chip surface having the electrical connection unit. Thus, the chip mounting area can be reduced.

Here, in the fifth embodiment, an example in which one lowermost chip is the IC unit 2 has been described as a method of arranging chips, but one lowermost chip is the ROM mounting unit 3. Of course, the configuration may be such that the ROM mounting portion 3 is provided in a communication pressure introducing hole (not shown). Further, the communication pressure introducing hole 9d may be tapered as described in the fourth embodiment, or may be formed of a plurality of holes.

Hereinafter, a sixth embodiment of the present invention will be described with reference to FIG. FIG. 6 is a sectional view showing a pressure sensor module according to a sixth embodiment of the present invention.

FIG. 6 shows that two lowermost chips and one uppermost chip are formed in order from the chip mounting surface 6a of the package, and the two lowermost chips are arranged side by side on one uppermost chip. This is a case where it is mounted as follows. The chip having the largest external size is the IC section 2 (uppermost chip), the lowermost chip is the semiconductor pressure sensor section 1 and the ROM mounting section 3, and the diaphragm section 1a of the semiconductor pressure sensor section 1 is the first. It is mounted so as to surround the first pressure introducing hole 9a so as to be displaced by receiving the pressure from the pressure introducing hole 9a.

On both upper and lower surfaces of the IC section 2, electrodes (not shown) made of metal and wiring patterns (not shown) for making electrical contact with the electrodes are formed. Through wiring 14 electrically connected to (not shown)
Is provided. On the upper surface of the ROM mounting portion 3, there are provided an electrode (not shown) made of metal and a wiring pattern (not shown) for making electrical contact with the electrode.

Electrodes of semiconductor pressure sensor unit 1 (not shown)
Are electrically connected to the through wires 14 and electrodes (not shown) of the IC section 2 by the bumps 4. The electrodes (not shown) of the ROM mounting section 3 are electrically connected to the through wirings 14 and the electrodes (not shown) of the IC section 2 by the bumps 4. Also, the through wiring 14 and the lead 11 of the IC unit 2
Is electrically connected by the wire 10.

In such a pressure sensor module,
Electrical connection using the bumps 4 and the wires 10 is performed, and the semiconductor pressure sensor unit 1, the IC unit 2, and the ROM mounting unit 3 are connected to the IC surface having the largest external size of the chip surface having the electrical connection unit.
By arranging three-dimensionally so as to fit in the C section 2, the mounting area of the chip can be reduced.

Hereinafter, a seventh embodiment of the present invention will be described with reference to FIG. FIG. 7 is a sectional view showing a pressure sensor module according to a seventh embodiment of the present invention. The seventh embodiment is different from the sixth embodiment in that the electrical connection method between the IC unit 2 and the lead 11 is changed. Therefore, the description of the common parts with the sixth embodiment will be omitted. .

As shown in FIG. 7, on the lower surface of the IC section 2,
An electrode (not shown) made of metal and a wiring pattern (not shown) for making electrical contact with the electrode are provided.

Electrodes of semiconductor pressure sensor 1 (not shown)
Are electrically connected to the electrodes (not shown) of the IC unit 2 by the bumps 4. The electrodes (not shown) of the ROM mounting section 3 are electrically connected to the electrodes (not shown) of the IC section 2 by bumps 4. Further, an electrode (not shown) of the IC unit 2 and the lead 11 are electrically connected by a wire 10. Therefore, as in the sixth embodiment, I
It is not necessary to provide the through wiring 14 in the C portion 2.

In such a pressure sensor module,
Electrical connection using the bump 4 and the TAB 5 is performed, and the semiconductor pressure sensor unit 1 and the ROM mounting unit 3 are three-dimensionally arranged so as to fit in the IC unit 2 having the largest external size of the chip surface having the electrical connection unit. By doing so, the mounting area of the chip can be reduced.

Here, in the sixth embodiment and the seventh embodiment, the example of the chip arrangement method has shown an example in which the two lowermost chips are the semiconductor pressure sensor unit 1 and the ROM mounting unit 3. Of course, the lowermost chip may have a configuration in which the semiconductor pressure sensor unit 1 and the IC unit 2 are provided.

Hereinafter, an eighth embodiment of the present invention will be described with reference to FIG. FIG. 8 is a sectional view showing a pressure sensor module according to an eighth embodiment of the present invention.

FIG. 8 shows that one lowermost chip and two uppermost chips are formed on the chip mounting surface 6a of the package in order from the chip mounting surface 6a, and the other two chips are formed on the lowermost chip. This shows a case where chips are mounted so as to be arranged side by side. The chip having the largest external size is the semiconductor pressure sensor unit 1, and surrounds the first pressure introduction hole 9a such that the diaphragm 1a of the semiconductor pressure sensor unit 1 is displaced by receiving the pressure from the first pressure introduction hole 9a. The semiconductor pressure sensor unit 1 is mounted in the form.

An electrode (not shown) made of metal and a wiring pattern (not shown) for making electrical contact with the electrode are provided on the lower surface of the IC section 2. An electrode (not shown) made of metal is provided on the lower surface of the ROM mounting section 3.

Electrodes of semiconductor pressure sensor unit 1 (not shown)
Are connected to the electrodes (not shown) of the IC section 2 and the R
The electrodes (not shown) of the OM mounting unit 3 are electrically connected to the wires 10 by wires 10. Further, an electrode (not shown) of the IC section 2 and an electrode (not shown) of the ROM mounting section 3 are electrically connected by wires 10. Also, a JCR is provided on the upper surface of the diaphragm 1a of the semiconductor pressure sensor 1.
A jelly-shaped sealing resin 30 for protecting the surface of (junction coat resin) or the like is provided.

In such a pressure sensor module,
The electrical connection using the bump 4 and the wire 10 is performed, and the IC
The mounting area of the chip can be reduced by arranging the unit 2 and the ROM mounting unit 3 in a three-dimensional manner so as to fit in the semiconductor pressure sensor unit 1 having the largest external size of the chip surface having the electrical connection unit. .

The present invention is not limited to the chip placement method described in the eighth embodiment.
When two lowermost chips and one uppermost chip are formed in this order, and the other two chips are mounted side by side on the uppermost chip, the chip having the largest external size is the semiconductor pressure sensor. In the case of the unit 1, the IC unit 2 and the ROM mounting unit 3 are mounted on the chip mounting surface 6a.
The diaphragm part 1a of the semiconductor pressure sensor part 1 is a first part with a part of each end of the C part 2 and the ROM mounting part 3 as a support part.
The first so as to be displaced by receiving the pressure from the pressure introducing hole 9a.
Of course, a configuration in which the semiconductor pressure sensor unit 1 is mounted so as to surround the pressure introducing hole 9a may be used.

Hereinafter, the semiconductor pressure sensor unit 1, the IC unit 2, and the R are described in the first to eighth embodiments.
Examples other than the three-chip mounting type of the OM mounting unit 3 are shown.

Hereinafter, a ninth embodiment of the present invention will be described with reference to FIG. FIG. 9 is a sectional view showing a pressure sensor module according to a ninth embodiment of the present invention.

As shown in FIG. 9, a laminated portion 20 is formed by laminating an IC portion 2 in which a lower layer portion is a ROM mounting portion 3 and an upper layer portion is an IC portion 2 and a ROM mounting portion 3. 20
Has a housing 21 which penetrates through the laminated portion 20 and communicates with the first pressure introducing hole 9a. The diaphragm 1a of the semiconductor pressure sensor 1 is provided in the housing 21 with the first pressure introducing hole 9a.
1st pressure introducing hole 9a so as to be displaced by receiving pressure from
The semiconductor pressure sensor unit 1 is mounted so as to surround the device.

On both upper and lower surfaces of the IC section 2, electrodes (not shown) made of metal and wiring patterns (not shown) for making electrical contact with the electrodes are formed. Through wiring 14 electrically connected to (not shown)
Is provided. The ROM mounting section 3 is provided with an electrode (not shown) made of metal.

Electrodes of semiconductor pressure sensor unit 1 (not shown)
The wire 10 is electrically connected to the through wiring 14 of the IC unit 2. RO and the through wiring 14 of the IC unit 2
The electrodes (not shown) of the M mounting section 3 are electrically connected by bumps 4. Also, the through wiring 1 of the IC unit 2
The wires 4 and the leads 11 are electrically connected by wires 10. On the upper surface of the diaphragm 1a of the semiconductor pressure sensor 1, a jelly-like sealing resin 30 for protecting the surface such as JCR (junction coat resin) is provided.

In such a pressure sensor module,
Electrical connection using the bumps 4 and the wires 10 is performed so that the semiconductor pressure sensor unit 1 is accommodated in a chip (IC unit 2, ROM mounting unit 3) having the largest external size of the chip surface having the electrical connection unit. The three-dimensional arrangement can reduce the mounting area of the chip.

Here, in the ninth embodiment, the method of arranging the chips is such that the lower layer constituting the laminated section 20 is the ROM mounting section 3 and the upper layer constituting the laminated section 20 is the IC section 2. As shown in FIG.
It is a matter of course that the upper part constituting the laminated part 20 which is the part 2 is the ROM mounting part 3.

Hereinafter, a tenth embodiment of the present invention will be described with reference to FIG. FIG. 10 is a sectional view showing a pressure sensor module according to a tenth embodiment of the present invention.

As shown in FIG. 10, the ROM mounting section 3
A lowermost chip is formed from the chip mounting surface 6a with respect to the chip mounting surface 6a of the package, and a second pressure introduction penetrating the ROM mounting portion 3 and communicating with the first pressure introducing hole 9a is formed in the ROM mounting portion 3. The second pressure introducing hole 9b is provided so that the central axis of the second pressure introducing hole 9b and the central axis of the first pressure introducing hole 9a coincide with each other.
The semiconductor pressure sensor unit 1 is mounted on the upper surface of the ROM so as to surround the second pressure introducing hole 9b, and the semiconductor pressure sensor unit 1 is accommodated on the upper surface of the ROM mounting unit 3 on which the semiconductor pressure sensor unit 1 is not mounted. The IC section 2 provided with the accommodating section 21 capable of mounting is mounted. The electrical connection method is the same as the method described in the ninth embodiment, and a description thereof will not be repeated.

Further, the connecting portion between the second pressure introducing hole 9b and the first pressure introducing hole 9a of the body 4 is configured to be continuous without any step, and the effect as described in the fourth embodiment is obtained. can get.

In such a pressure sensor module,
Electrical connection using the bumps 4 and the wires 10 is performed, and the semiconductor pressure sensor unit 1, the IC unit 2, and the ROM mounting unit 3 are three-dimensionally mounted so as to fit on the chip having the largest external size of the chip surface having the electrical connection unit. With such an arrangement, the chip mounting area can be reduced.

Here, in the tenth embodiment, the method of arranging the chips is such that the lowermost chip is the ROM mounting section 3 having the second pressure introducing hole 9b, and the upper part of the lowermost chip is the accommodation section. Although the example in which the IC part 2 includes the IC chip 21 is shown, the lowermost chip is the IC part 2 having the second pressure introduction hole 9b, and the upper part of the lowermost chip is the housing part 21. Of course, the configuration may be the ROM mounting section 3 provided. Further, the second pressure introducing hole 9b may be tapered as described in the fourth embodiment or may be formed of a plurality of holes.

Note that the present invention is not limited to the pressure sensor module of the above embodiment, and various modifications are possible within the scope of the claims. All of these are included.

[0080]

As described above, in the pressure sensor module according to any one of the first to fifth aspects of the present invention, the pressure sensor module has a diaphragm portion that is displaced by pressure, and the pressure is increased by the displacement of the diaphragm portion. A semiconductor pressure sensor unit having a function of detecting the pressure, an IC unit having a function of controlling the semiconductor pressure sensor unit, and a trimming function of correcting characteristics of the semiconductor pressure sensor unit. RO
Of the three chips of the M mounting portion, the other two chips are mounted so that the outer size of the chip surface having the electrical connection portion is within the largest chip size, and the diaphragm portion of the semiconductor pressure sensor portion is The semiconductor pressure sensor unit is mounted so as to be displaced by receiving a pressure from the first pressure introduction hole. The three-dimensional arrangement of the three chips reduces the chip mounting area. Therefore, it is possible to provide a pressure sensor module having a reduced size.

According to a sixth aspect of the present invention, in the pressure sensor module according to any one of the first to fifth aspects, the semiconductor pressure sensor unit, the IC unit, The electrical connection portion of the ROM mounting portion is used for making an electrical connection using both a bump and a TAB or a bump and a bonding wire, and is mounted three-dimensionally between chips as compared to a case where only a bonding wire is used. In doing so, there is an effect that the work of electrical connection is easy. In addition, there is an effect that the mounting space including the means for connecting the chip and the electrical connection portion thereof becomes smaller.

[Brief description of the drawings]

FIG. 1 is a diagram showing a pressure sensor module according to a first embodiment of the present invention.

FIG. 2 is a diagram illustrating a pressure sensor module according to a second embodiment of the present invention.

FIG. 3 is a view showing a pressure sensor module according to a third embodiment of the present invention.

FIG. 4 is a diagram showing a pressure sensor module according to a fourth embodiment of the present invention.

FIG. 5 is a view showing a pressure sensor module according to a fifth embodiment of the present invention.

FIG. 6 is a view showing a pressure sensor module according to a sixth embodiment of the present invention.

FIG. 7 is a view showing a pressure sensor module according to a seventh embodiment of the present invention.

FIG. 8 is a view showing a pressure sensor module according to an eighth embodiment of the present invention.

FIG. 9 is a view showing a pressure sensor module according to a ninth embodiment of the present invention.

FIG. 10 is a view showing a pressure sensor module according to a tenth embodiment of the present invention.

FIG. 11 is a diagram showing a pressure sensor module according to a conventional example.

[Description of Signs] 1 Semiconductor pressure sensor section 2 IC section 3 ROM mounting section 4 Bump 5 TAB 6 Body section 7 Cover section 8 Space section 9 Pressure introduction pipe 10 Wire 11 Lead 14 Through wiring 20 Stacking section 21 Housing section 30 Sealing resin

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2F055 AA40 BB20 CC02 DD04 EE13 FF11 FF23 GG12 GG14 GG25 HH05 4M112 AA01 BA01 CA12 CA13 CA15 DA17 GA01 GA03

Claims (7)

[Claims] 1. A semiconductor pressure sensor unit having a diaphragm part displaced by pressure and having a function of detecting pressure by displacement of the diaphragm part, and a function of controlling the semiconductor pressure sensor part. An IC section, a ROM mounting section having a trimming function for correcting characteristics of the semiconductor pressure sensor section, the semiconductor pressure sensor section and the IC
And a package having a first pressure introducing hole for introducing pressure into the diaphragm portion, the semiconductor pressure sensor portion and the IC portion. The other two chips are mounted so that the outer size of the chip surface having the electrical connection portion is within the largest chip size among the three chips of the ROM mounting portion, and the diaphragm portion of the semiconductor pressure sensor portion is mounted. Wherein the semiconductor pressure sensor is mounted so that the semiconductor pressure sensor is displaced by receiving a pressure from the first pressure introduction hole. 2. The three chips of the semiconductor pressure sensor part, the IC part, and the ROM mounting part form a lowermost chip, an intermediate chip, and an uppermost chip in order from the chip mounting surface of the package. The pressure sensor module according to claim 1, wherein the pressure sensor module is mounted in a stacked manner as described above. 3. The three chips of the semiconductor pressure sensor section, the IC section, and the ROM mounting section, one chip having the largest external size of a chip surface having an electrical connection section, and the other two chips The pressure sensor module according to claim 1, wherein the pressure sensor modules are mounted so as to be arranged side by side. 4. A laminated portion is formed by laminating the IC portion and the ROM mounting portion, and the laminated portion has an accommodating portion penetrating through the laminated portion and communicating with the first pressure introducing hole. Become
The semiconductor pressure sensor unit is mounted in the housing so as to surround the first pressure introduction hole such that a diaphragm of the semiconductor pressure sensor unit is displaced by receiving a pressure from the first pressure introduction hole. The pressure sensor module according to claim 1, wherein 5. The chip of one of the IC section and the ROM mounting section forms a lowermost chip with respect to a chip mounting surface of the package, and the lowermost chip includes the lowermost chip. And a second pressure introducing hole communicating with the first pressure introducing hole. The semiconductor pressure sensor is mounted on the lowermost chip so as to surround the second pressure introducing hole. Wherein the other chip provided with a housing portion capable of housing the semiconductor pressure sensor unit is mounted on a portion of the upper surface of the lowermost chip where the semiconductor pressure sensor unit is not mounted. The pressure sensor module according to claim 1. 6. The semiconductor pressure sensor section, the IC section, and the electrical connection section of the ROM mounting section are provided with bumps and TAs.
The pressure sensor module according to any one of claims 1 to 5, wherein the electrical connection is performed by using together with B. 7. The semiconductor pressure sensor section, the IC section, and the electrical connection section of the ROM mounting section perform electrical connection by using both a bump and a bonding wire. The pressure sensor module according to claim 5.