JP2002140929A - Metallic material for electronic part, electronic part, electronic equipment, machining method for metallic material, and electronic optical part - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a metallic material for an electronic part having a low resistivity when compared with a conventional material and excellent machining property and being stable, provide the electronic part, electronic equipment, and an electronic optical part using the metallic material, and provide a machining method for the metallic material. SOLUTION: This metallic material for the electronic part is made of alloy containing Au of 0.1 wt.% or more and 10 wt.% or less and one kind or a plurality of elements selected from a group of Cu, Al, Ti, Pd, Ni, V, Ta, W, Mo, Cr, Ru and Mg of 0.1 wt.% or more and 5 wt.% or less using Ag as a main component.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal material for an electronic component, an electronic component, an electronic device, a method of processing the metal material, and an electronic optical component, for example, a liquid crystal display panel, various semiconductor devices, a wiring board, a chip component, and the like. Can be applied. In the present invention, Ag is a main component, and Au is 0.1 to 3 watts.
By using an alloy containing 0.1% to 5% by weight of an element such as Cu as a metal material, it has a lower resistivity than conventional, and is stable and has excellent workability. We propose metal materials, electronic components and electronic devices using the metal materials.

[0002]

2. Description of the Related Art Conventionally, in electronic devices and electronic parts,
Cu, Al, Mo, T for wiring material, electrode material and contact material
a, metal material of pure metal such as W, Cr, Al-Cu,
A wiring pattern is formed using a metal material made of an alloy such as Al-Cu-Si, Al-Pd, TaSi, and WSi.

For example, in a transmission type liquid crystal display panel constituting a flat panel display, generally, pure Al having excellent etching properties and low electric resistance is used as a wiring material. However, pure Al has a low melting point of 660 ° C., and when used as a wiring material for a liquid crystal display panel, chemical vapor deposition (CVD) after forming a wiring film.
300 ~ 400 ℃ in por Deposition process etc.
Defects such as hillocks and whiskers may occur in the heat treatment process to a certain degree. For this reason, in a liquid crystal display panel, Ta, Mo, C
In some cases, such defects are prevented from being generated by using r, W, etc. as a wiring material instead of pure Al.

In a reflection type liquid crystal display panel,
A high reflectance layer that reflects the transmitted light of the liquid crystal cell is required,
Pure Al, an alloy containing Al as a main component, pure Ag, and Ag as main components are used for such a high-reflectance layer or as a high-reflectivity layer for a wiring pattern and an electrode. Alloy, Au or the like is used.
In addition, micro mirrors are arranged side by side on a silicon chip,
In an electronic optical component configured to display an image by light modulation by each mirror (hereinafter, referred to as an electronic optical component using a minute mirror), pure Al is used for a member serving as a mirror.

[0005]

However, the electric resistance is lower than that of a metal material used in conventional electronic equipment.
If a metal material that is stable and excellent in workability can be obtained, it can be considered that it can be applied to various electronic components to improve performance and further simplify the manufacturing process.

That is, in a transmissive liquid crystal display panel, Ta, Mo, Cr, W, etc., which are used in place of pure Al for the purpose of preventing the occurrence of defects, have defects having a higher resistivity than pure Al. is there. As a result, in the transmissive liquid crystal display panel, there is a problem that the wiring length of the wiring pattern increases due to the increase in size and definition, and when the wiring pattern is miniaturized, it becomes difficult to drive easily and reliably. . As a result, in the transmission type liquid crystal display panel, there is no actual material suitable for the wiring material.

Further, when a high-reflectance layer is also used for wiring and electrodes as in a reflection type liquid crystal display panel and an electronic optical component using a micro mirror, the characteristics required for the wiring material of the transmission type liquid crystal display panel are high. The requirement as a reflectance layer will be weighted.

In this case, from the viewpoint of efficiently reflecting incident light as the high reflectivity layer, pure Ag having the highest reflectivity in the visible light wavelength region is suitable for the material of the high reflectivity layer, but pure Ag is used. In the wiring due to poor weather resistance,
It is not suitable as an electrode material. As a result, even in the case of the reflection-type liquid crystal display panel and the electro-optical component using the micromirror, there has been no actual wiring material.

In the reflection type liquid crystal display panel,
For these reasons, although a barrier layer is formed on the highly reflective film and the wiring electrode layer or above and below the reflective film and the wiring electrode layer to improve the weather resistance, the number of steps for forming the barrier layer is increased. This complicates the manufacturing process, and there is still a problem that the reliability at high temperatures is still insufficient even if a barrier layer is formed in this way.

By the way, when examining a wiring material having a low resistance value, a material having a lower resistivity than Al is A
There are u, Cu, and Ag, but Au is a material that is difficult to obtain easily. Further, Cu has a problem that it is inferior in weather resistance, poor in workability by etching, and difficult to perform fine processing. Ag reacts sensitively to chlorides, sulfur, sulfides and the like, and has problems in fine workability and weather resistance.

As an example in which Ag reacts sensitively, in a dry etching process using an etching gas containing chlorine, Ag reacts with chlorine in the etching gas as the etching progresses to form AgCl on the boundary surface of the wiring pattern. Is generated, and the conductivity and thermal conductivity are impaired by the AgCl.

An example of Ag having a problem with weather resistance is that when applied to a reflective liquid crystal display panel, Ag can react with oxygen at the interface or a trace amount of sulfur due to direct contact with the transparent conductive film. Therefore, there is a problem that the barrier layer must be formed on the base layer as in the case of Al, or a sandwich structure must be formed between the upper and lower barrier layers.

In these liquid crystal display panels,
Although a TFT (Thin Film Transistor) made of amorphous silicon or polycrystalline silicon is often used as a driving device, there is no actual electrode material as viewed from the driving device. That is, in some of these driving devices, a manufacturing process is simplified by oxidizing a metal material of an electrode and forming a gate insulating film between the electrode and a silicon active element. (That is, the anodization method).

[0014]

[Table 1]

Table 1 shows the resistivity of the conventional wiring material. Among the wiring materials shown in Table 9, wiring materials capable of forming such a gate insulating film include Al and Ta, and in particular, in the case of Ta, defects such as pinholes are present. An oxide insulating film with low yield and high yield can be formed. However, in the case of Ta, since the resistivity is high, in the case of such anodic oxidation, it is necessary to adopt an electrode structure of a two-layer wiring using Al having a low resistivity, which eventually increases the manufacturing process. Was supposed to be. In the case of this two-layer wiring, the resistivity of the wiring pattern is eventually determined by Al.

In addition to the above-described application to a display device, a DRAM, a flash memory, a CPU, an MPU,
In semiconductor devices such as ASICs, the width of wiring is becoming narrower due to high integration, and the wiring length of wiring patterns tends to increase with the increase in chip size and the complexity of multilayer wiring. In the case of the semiconductor device described above, a wiring material having low resistivity, stability and excellent workability is desired.

That is, such a decrease in the wiring width and an increase in the wiring length cause an increase in the resistance in the wiring. Due to the increase in the resistance, the voltage drop in the wiring increases, and the driving voltage of the element decreases. , And power consumption increases,
Further, a delay occurs in signal transmission by wiring.

Further, other than such a semiconductor device,
For example, in electronic parts such as printed wiring boards, chip capacitors, and relays, Cu, Ag, and the like are used as wiring materials, electrode materials, and contact materials. However, these materials are still not practically weather-resistant. There were enough problems and there was a problem that was difficult to recycle.

The present invention has been made in view of the above circumstances, and has as its object to provide a metal material for electronic parts which has a lower resistivity than conventional ones, and is stable and excellent in workability.
An object of the present invention is to provide a method for processing an electronic component, an electronic device, an electronic optical component, and a metal material using the metal material.

[0020]

In order to solve the above-mentioned problems, a metal material for electronic parts according to claim 1 of the present invention comprises
g as a main component, containing Au in a range of 0.1 wt% to 10 wt%, and further containing C in the Ag-Au alloy material.
u, Al, Ti, Pd, Ni, V, Ta, W, Mo, C
0.1% by weight or more of at least one kind of metal element among a plurality of metal elements selected from the group consisting of r, Ru, and Mg;
The alloy is characterized by being added at 0 wt% or less.

According to the above metal material for electronic parts, if Au is added to Ag to uniformly replace Au in the crystal of Ag, or even if it is in other states, it is homogeneously melted to form a solid solution, The weather resistance of Ag as a whole can be improved.
u, Al, Ti, Pd, Ni, V, Ta, W, Mo, C
If one or more elements selected from the group consisting of r, Ru, and Mg are added, the resistivity can be reduced or the rate of increase in the resistivity can be suppressed by the third element.
At this time, the content of these added elements is 0.1 wt% or more.
By setting the content to not more than wt%, the weather resistance can be improved.

In addition, Cu, A
1, Ti, Pd, Ni, V, Ta, W, Mo, Cr, R
In an alloy obtained by adding one or more elements selected from the group consisting of u and Mg in an amount of 0.1 wt% or more and 5 wt% or less, excellent thermal conductivity of pure Ag can be maintained, and sputtering can be further performed. It can be applied to conventional film forming processes such as deposition, vapor deposition, CVD, and plating, and can be easily patterned by wet etching and dry etching, and is stable even at high temperatures. Can be maintained. Therefore, it is possible to obtain a metal material for electronic parts which has a lower resistivity than the conventional one, and is stable and excellent in workability.

In the metal material for electronic parts according to the present invention, the metal material for electronic parts can be a wiring material. Further, it is preferable that the electrical resistivity of the metal material for electronic parts is 5 μΩcm or less.

The metal material for electronic parts according to the present invention can be an electrode material. Further, the metal material for electronic parts may be a contact material.
Further, the metal material for an electronic component may be a sputtering target material.

Further, the metal material for electronic parts according to the present invention can be a wiring material. Further, the electrical resistivity of the metal material for electronic parts is 1.6 μΩcm or more and 5 μΩcm or more.
It is preferably Ωcm or less. Further, the metal material for an electronic component may be an electrode material. Further, the metal material for an electronic component may be a sputtering target material.

An electronic component according to an eighth aspect of the present invention is an electronic component in which a wiring pattern, an electrode, or a contact is formed of a predetermined metal material, wherein the metal material has Ag as a main component and Au has a value of 0%. .1 wt% or more and 10 wt% or less,
Cu, Al, Ti, Pd, Ni, V, Ta, W, Mo,
It is characterized by being made of an alloy containing one or more elements selected from the group consisting of Cr, Ru, and Mg in an amount of 0.1 wt% or more and 5 wt% or less. Therefore, it is possible to obtain an electronic component in which a metal material for an electronic component that has a low resistivity and is stable and excellent in processability is applied to a wiring pattern, an electrode, or a contact.

In the electronic component according to the present invention,
The wiring pattern, electrode or contact may be formed by etching with a solution containing phosphoric acid. Further, the wiring pattern, electrode or contact,
It may be formed by etching in a gas atmosphere containing chlorine. Further, a portion other than the wiring pattern, the electrode, and the contact may be processed by etching in a gas atmosphere containing fluorine.

Further, in the electronic component according to the present invention,
The wiring pattern, electrode or contact is at least 300 ° C. and 70
It is preferable that heat treatment is performed in a temperature range of 0 ° C. or lower. Further, the wiring pattern, electrode or contact,
W, Ta, Mo, indium oxide, tin oxide, titanium nitride, silicon oxide, silicon nitride, titanium oxide, and niobium oxide may be formed on a base formed by mixing any one or more of them. It is possible. It is also possible that the wiring pattern, electrode or contact is formed directly on a glass or plastic substrate.

An electronic device according to a fifteenth aspect of the present invention is an electronic device in which a wiring pattern, an electrode, or a contact is formed of a predetermined metal material, wherein the metal material has Ag as a main component and Au has a value of 0%. .1 wt% to 10 wt%, Cu, Al, Ti, Pd, Ni, V, Ta, W, M
It is characterized by being made of an alloy containing one or more elements selected from the group consisting of o, Cr, Ru, and Mg, each in an amount of 0.1 wt% or more and 5 wt% or less. Therefore, it is possible to obtain an electronic component in which a metal material for an electronic component that has a low resistivity and is stable and excellent in processability is applied to a wiring pattern, an electrode, or a contact.

In the electronic device according to the present invention,
The wiring pattern, the electrode or the contact may be formed by etching with a solution containing phosphoric acid. Further, it is possible that the wiring pattern, the electrode or the contact is formed by etching in a gas atmosphere containing chlorine. Further, other portions than the wiring pattern, the electrodes, and the contacts may be processed by etching in a gas atmosphere containing fluorine.

In the electronic device according to the present invention,
The wiring pattern, electrode or contact is at least 300 ° C. and 75
It is preferable that heat treatment is performed in a temperature range of 0 ° C. or lower. Further, the wiring pattern, electrode or contact,
W, Ta, Mo, indium oxide, tin oxide, titanium nitride, silicon oxide, silicon nitride, titanium oxide, and niobium oxide may be formed on a base formed by mixing any one or more of them. It is possible. Further, it is also possible that the wiring pattern, electrode or contact is formed directly on a glass or plastic substrate.

In the method for processing a metal material according to a twenty-second aspect of the present invention, Ag is a main component, and Au is 0.1 wt% or more.
0 wt% or less, Cu, Al, Ti, Pd, Ni,
0.1 wt% each of one or more elements selected from the group consisting of V, Ta, W, Mo, Cr, Ru, and Mg
A metal film of an alloy containing 5 wt% or less is etched with a solution containing phosphoric acid to form a wiring pattern, an electrode or a contact.

According to the above-described method for processing a metal material, such a ternary alloy can be etched by a phosphoric acid-based etchant such as H ₃ PO ₄ + HNO ₃ + CH ₃ COOH. The etching rate can also be controlled by adding water, cerium nitrate, silver nitrate, or the like in addition to phosphoric acid, nitric acid, and acetic acid. Thereby, in addition to the conventional patterning method, it is possible to obtain a suitable patterning method applied to this kind of metal material.

According to a twenty-third aspect of the present invention, there is provided the metal material processing method, wherein Ag is a main component and Au is 0.1 wt% or more.
0 wt% or less, Cu, Al, Ti, Pd, Ni,
0.1 wt% each of one or more elements selected from the group consisting of V, Ta, W, Mo, Cr, Ru, and Mg
A metal film of an alloy containing 3 wt% or less is etched in a gas atmosphere containing hydrochloric acid to form a wiring pattern, an electrode or a contact.

According to the above-described method for processing a metal material,
Ternary alloys in a gas atmosphere containing chlorine
Dry etching is possible, for example, Cl_Two, CCl_Four, B
Cl _Three, SiCl_FourIn gas atmosphere containing chlorine such as
E (Reactive Ion Etching), plasma etching, etc.
Is possible. This allows for traditional patterns
Suitable for this kind of metal material in addition to
A simple patterning technique can be obtained.

The method for processing a metal material according to claim 24 of the present invention is applied to a device processing method including a metal material,
Ag is the main component, and Au is 0.1 wt% or more and 10 wt%.
Contains the following, Cu, Al, Ti, Pd, Ni, V, T
a, W, Mo, Cr, Ru, Mg, one or more elements selected from the group consisting of
In the case of having a metal film of an alloy containing not more than wt%, a material other than the metal film is processed by etching in a gas atmosphere containing fluorine.

According to the above-described method for processing a metal material, it is difficult to dry-etch such a ternary alloy in a gas atmosphere containing fluorine, and there is an advantage that the ternary alloy is not damaged by these gases. For example, CF ₄ , C ₃ F ₈ ,
RIE, plasma etching, etc., in a gas atmosphere containing fluorine such as C ₄ F ₈ and SF ₆ and not containing chlorine
Without etching such a ternary alloy, for example, Si, polycrystalline Si, amorphous Si, SiO ₂ ,
Other materials such as Si ₃ N ₄ , Mo, W, Ta, Ti, Pt can be etched. As a result, it is possible to obtain a patterning method suitable for a device made of such a metal material and another material.

In the method for processing a metal material according to the twenty-fifth aspect of the present invention, Ag is a main component and Au is 0.1 wt% or more.
wt% or less, Cu, Al, Ti, Pd, Ni,
0.1 wt% each of one or more elements selected from the group consisting of V, Ta, W, Mo, Cr, Ru, and Mg
A metal film of an alloy containing not less than 5 wt% is heat-treated in a temperature range of 300 ° C. to 750 ° C. to form a wiring pattern, an electrode or a contact.

According to the above-described method for processing a metal material, the method is applied to a method for processing a metal material.
These can be alloyed and have excellent stability at high temperatures, so that even in a high temperature process after film formation by various film formation methods, a stable state can be maintained,
Thus, it is possible to obtain a wiring pattern or the like that is stable and has excellent workability by being applied to various devices that require a high-temperature process.

In the method for processing a metal material according to claim 26 of the present invention, Ag is a main component, and Au is 0.1 wt% or more.
0 wt% or less, Cu, Al, Ti, Pd, Ni,
0.1 wt% each of one or more elements selected from the group consisting of V, Ta, W, Mo, Cr, Ru, and Mg
The metal film of the alloy containing not less than 5 wt% is W, Ta,
Mo, indium oxide, tin oxide, titanium nitride, silicon oxide, silicon nitride, titanium oxide, niobium oxide formed on a base formed by mixing any one or more of them to form a wiring pattern, an electrode or a contact. It is characterized by forming.

According to the above-described method for processing a metal material, a wiring pattern, an electrode or a contact made of this kind of alloy is applied to a method for processing a metal material by using W, Ta, Mo, indium oxide, tin oxide, nitride, or the like. Formed on a base formed by mixing one or more of titanium, silicon oxide, silicon nitride, titanium oxide, and niobium oxide, and applying a conventional processing process to ensure sufficient adhesion In addition, it is possible to obtain a wiring pattern or the like which has a low resistivity, is stable and has excellent workability.

In the method for processing a metal material according to claim 27 of the present invention, Ag is a main component and Au is 0.1 wt% or more.
0 wt% or less, Cu, Al, Ti, Pd, Ni,
0.1 wt% each of one or more elements selected from the group consisting of V, Ta, W, Mo, Cr, Ru, and Mg
A metal film of an alloy containing at least 5 wt% or less is formed directly on a glass or plastic substrate to form a wiring pattern,
It is characterized by forming an electrode or a contact.

According to the above-mentioned method for processing a metal material, if the wiring pattern, electrode or contact made of these alloys is formed directly on a glass or plastic substrate by applying to the method for processing a metal material, In this case, since the influence of oxygen is small, an increase in resistivity as in the case of, for example, Al is reduced, whereby a low-resistivity wiring pattern or the like can be easily formed by a simple manufacturing process.

The electronic optical component according to claim 28 of the present invention is applied to an electronic optical component in which a reflective film, an electrode or a wiring is formed of a predetermined metal material. 0.1 wt% or more and 10 wt% or less, and Cu, Al, Ti, Pd, Ni, V, Ta, W,
It is characterized by being made of an alloy containing one or more elements selected from the group consisting of Mo, Cr, Ru, and Mg in an amount of 0.1 wt% or more and 5 wt% or less. This makes it possible to obtain an electro-optical component in which a metal material having a low resistivity, being stable, having excellent workability, and having an excellent reflectance is applied to a reflective film, a wiring pattern, or an electrode.

[0045]

Embodiments of the present invention will be described below with reference to the accompanying drawings.

In this embodiment, the metal material of various electronic components contains Ag as a main component, 0.1 to 3% by weight (wt%) of Au, and Cu, Al, Ti, Pd, N
one or more elements selected from the group consisting of i, V, Ta, W, Mo, Cr, Ru, and Mg,
An alloy containing 10 wt% is applied. Here, various electronic components include transmission type liquid crystal display panels, reflection type liquid crystal display panels, organic EL (Electro Luminescence) panels, plasma displays, display devices such as electro-optical components using micromirrors, various semiconductor devices, printed wiring. Substrates, chip capacitors, relays, etc. These alloys are used as wiring materials, electrode materials, highly reflective film materials, contact materials, etc. for these wiring patterns, and also as sputtering target materials used for making these wirings etc. Applied.

Here, as is known, by adding Au to Ag and uniformly substituting Au in the Ag crystal, or even in any other state, it is homogeneously melted to form a solid solution. The overall weather resistance can be improved. Further, Cu, Al, Ti, Pd, Ni, V, Ta, W, Mo,
If one or more elements selected from the group consisting of Cr, Ru, and Mg are added, the resistivity can be reduced or the increase in resistivity can be suppressed. Here, the addition amount of the third element is 0.1 to 0.5 wt% to improve the weather resistance, and if the addition amount is more than 5 wt%, the weather resistance deteriorates conversely.

In the silver alloy having improved weather resistance as described above, the characteristics of pure Ag having the highest conductivity, heat conductivity and high reflectivity among the metal elements are maintained. Thereby, a metal material having excellent weather resistance, low resistivity, high thermal conductivity, and high reflectance can be obtained.

In particular, when the present invention is applied to a wiring material, the value of 3 μΩcm or less required for the wiring material can be secured by selecting the element to be added in the above range.
In addition, as a wiring material, A which is generally used in the related art is used.
It is considered that if the resistivity is equal to or less than the resistivity of the lSi alloy, it can be put to practical use.
The resistivity of not less than m and not more than 3.5 μΩcm, which is the resistivity of this AlSi alloy, can be secured as required.

Further, such a silver alloy is not a eutectic reaction alloy material but forms a complete solid solution. Therefore,
Even when viewed microscopically, uniform characteristics can be stably provided. Further, these complete solid solution alloys maintain the extensibility of Ag and have a small deterioration due to the stress of the film. Is reduced. Therefore, conventional materials such as Al, Mo, Cr, Ti, Ta,
Compared with Cu, it has excellent workability, is stable at high temperatures, and can have improved reliability.

As a method of processing Ag, a method using a chlorine-based composite gas is known in dry etching, and a method using a nitric acid-based etchant is known in wet etching. The Ag alloy according to this embodiment can also be etched by these methods, and various processing methods accumulated with the conventional Ag alloy can be applied.

As the gas containing chlorine, for example,
Cl ₂ , CCl ₄ , BCl ₃ , SiCl _4, etc., and the Ag alloy film according to this embodiment can be processed in these atmospheres by RIE, plasma etching, or the like. Incidentally, when such a dry etching process using an etching gas containing chlorine is applied to a wiring pattern made of Ag, chlorine in the gas reacts with Ag due to the progress of etching, and AgCl is generated at the boundary surface of the wiring pattern. Although the conductivity and thermal conductivity are impaired by AgCl, it was confirmed that no such reaction occurred in the Ag alloy film according to this embodiment.

Thus, in the process of producing an electronic component using this kind of metal material, a suitable patterning technique can be obtained by etching in a chlorine-based gas atmosphere.

In such a ternary alloy, dry etching in a gas atmosphere containing fluorine and containing no chlorine is difficult, and there is an advantage that the ternary alloy is not damaged by these gases. For example, CF ₄ , C ₃ F ₈ , C ₄ F ₈ ,
RIE, plasma etching, or the like in a gas atmosphere such as SF _{6 has} no influence on such a ternary alloy. For example, Si, polycrystalline Si, amorphous S
i, SiO ₂ , Si ₃ N ₄ , Mo, W, Ta, Ti, Pt
And other materials can be etched.

Thus, by performing the treatment in a gas atmosphere containing fluorine and not containing chlorine, a portion other than the ternary alloy can be selectively etched and processed.
This also makes it possible to obtain a suitable patterning technique applicable to this kind of metal material.

On the other hand, at present, in wet etching in a liquid crystal display manufacturing facility, pure Al or the like is etched with an etching solution containing phosphoric acid. Such a phosphoric acid-based etchant is, for example, H ₃ PO ₄ + HNO ₃ + CH ₃ COOH. In the case of a conventional pure Ag or an alloy composed of two or three elements mainly composed of Ag, Etching was difficult with such an etchant.

However, Ag is used as a main component and Au is added in an amount of 0.
1-5 wt%, and further added Cu, Al, Ti, Pd,
One or more elements selected from the group consisting of Ni, V, Ta, W, Mo, Cr, Ru and Mg
It has been found that an alloy containing wt% can be etched using such a phosphoric acid-based complex. Thereby, the etching can be performed by effectively utilizing the conventional etching equipment using Al. Incidentally, similarly to the conventional case, it is also possible to control the etching rate by adding water, cell nitrate, silver nitrate or the like in addition to phosphoric acid, nitric acid and acetic acid.

In the subsequent steps such as cleaning after etching, the same steps as those for pure Al, Al alloy and the like can be used, and the possibility of polluting the environment is reduced as compared with the case where Al-based etching is performed. be able to.

According to these, the conventional materials Al, M
A metal material excellent in workability can be obtained as compared with o, Cr, Ti, Ta, and Cu.

Further, with this Ag alloy, a film can be easily and reliably formed by a conventional film forming process such as a sputtering method, an evaporation method, a CVD method, and a plating method. In this sputtering, the Ag alloy can be sputtered at a rate about three times as high as that of the Al-based material, and is characterized in that the thin film formation rate by the sputtering method is high. This can shorten the film formation time,
The time required for production can be shortened accordingly. Ag, which is the main material, is a noble metal and is easier to collect and recycle than other metals.

When a film is formed by a sputtering method, a vapor deposition method, or the like, it is necessary to form an alloy by heating. In this process, a heat treatment is performed in a temperature range of 300 ° C. to 750 ° C. It is possible to form a metal film that is stable, has excellent resistivity and has excellent resistivity.

Further, with respect to the adhesion to the underlying material which is important as a processing process, W, Ta, Mo,
Indium oxide, tin oxide, titanium nitride, silicon oxide,
By applying any one of silicon nitride, titanium oxide, and niobium oxide, or a material formed by mixing a plurality of such materials, good adhesion is ensured. It can be easily replaced with an Al-based wiring pattern, and good characteristics can be secured.

In the case of an Al-based material, for example, when a film is formed directly on plastic or glass by using a thin film, the resistance value becomes considerably large because Al reacts with oxygen and the like, and is two to three times the resistance value of the bulk material. Value. In contrast, in the case of this Ag alloy, the influence of oxygen is small, and the increase in resistivity due to the direct formation of the thin film on plastic or glass is reduced. This makes it possible to form a wiring pattern or the like by forming a film directly on plastic or glass, and to form a wiring pattern or the like with good characteristics, and to create a wiring pattern or the like having a low resistivity by a simple manufacturing process. be able to.

Thus, in the case of a transmission type liquid crystal display panel, when the wiring length is increased by applying a wiring pattern to a large screen and high definition, and the wiring becomes finer,
Driving can be performed simply and reliably, reliability can be improved, and power consumption can be reduced.

In a reflection type liquid crystal display panel,
When applied to a wiring pattern, the same effect as in the case of a transmissive liquid crystal display panel can be obtained, and when applied to a highly reflective film, a high reflectance can be stably secured, and a bright display screen is formed. be able to.

Similarly, the present invention is applied to a reflection film, an electrode, or a wiring pattern of a light modulation device such as an electronic optical component using a micromirror, and has high reflection efficiency, low resistance, high luminance and high-speed operation. Possible devices can be formed.

In these liquid crystal display panels and various semiconductor devices, a sufficiently small resistance value can be obtained by applying the anodic oxidation method using Ta, for example, as a two-layer structure of this silver alloy and Ta.

Further, in various semiconductor devices,
When applied to a wiring pattern, it is possible to prevent an increase in wiring length and an increase in resistance due to miniaturization of wiring, thereby reducing power consumption. Further, a voltage drop due to wiring can be prevented, and furthermore, a signal delay can be prevented, whereby various characteristics can be improved and reliability can be improved.

Also, the wiring pattern of the printed wiring board,
The present invention can be applied to an electrode of a chip component, a contact point of a relay, and the like, to secure suitable characteristics and secure high reliability.

Next, the conventional pure Al, A
Table 2 shows the resistance value and chemical resistance of the above-described silver alloy in comparison with the l-based alloy and the Ag alloy.

[0071]

[Table 2]

The samples used for this measurement were prepared by forming films of each composition on a quartz substrate by an RF sputtering method and then heat-treating at 300 ° C. for 3 hours in a vacuum. Each film thickness is 300 nm. The resistance was measured at room temperature by a four-probe method.

In these metallic materials, Ag has the lowest resistivity, and when other elements are added to Ag, the resistivity increases. Using this increase in the resistance value as a guide, a determination is made based on a resistivity of 3.5 (μΩcm) of the AlSi alloy most commonly used in the past as Ag.
In the AuCu alloy, the amount of Au added is 0.1 to 3 wt%,
It can be seen that this criterion is satisfied when the added amount of Cu is in the range of 0.1 to 3 wt%. The increase in resistivity due to the addition of Cu is smaller than when the same amount of Au is added. When Cu is added to an AgAu alloy, the resistivity may decrease with the addition of Cu.

In order to examine the resistivity when a film was formed by a film forming method other than the sputtering method, Ag-1.0 wt% A was formed by a vapor deposition method, a plating method, and a CVD method, respectively.
A u-1.0 wt% Cu film was formed, and the resistivity was measured by the above-described measuring method. According to the measurement results, the evaporation method,
1.9 in any of the plating method and the CVD method.
A resistivity of 0 to 1.98 μΩcm was detected, and it was found that almost the same film could be formed irrespective of the film forming method.

Next, Table 3 shows the resistivity immediately after the film formation without annealing.

[0076]

[Table 3]

For this measurement, a film was formed to a thickness of 150 nm by a sputtering method using acrylic as a substrate. When forming a film on such a plastic substrate,
Since the Al-based alloy reacts with oxygen in addition to being a thin film, the resistance value is significantly increased, and the bulk material of the resistivity becomes 2-3 times.

On the other hand, in the case of this Ag alloy, the increase in resistivity is only 1.6 times that of the bulk material and 2.56 (μΩcm) because the influence of oxygen is small.
Low resistivity was obtained. AgAu has Cu, A
As for the alloys to which l or the like was added, the rate of increase in resistivity and the resistivity differed depending on the added material. Particularly when Cu was added, a sufficiently low resistivity of 3.23 (μΩcm) was obtained.

Next, Table 3 shows the evaluation results of the chemical resistance of the films having these compositions.

[0080]

[Table 4]

The column of chemical resistance in Table 3 summarizes the evaluation results shown in Table 3. This evaluation test
3% NaCl, 5% NaOH, 1% COH, 1% H ₂ S
Each sample was immersed in an O ₄ solution at room temperature for 24 hours, and then visually confirmed.

In the conventional materials, Al, A excluding Au
In 1Cu, AlSi, and AlSiCu, loss of metallic luster, cloudiness, and transparency were observed, and it was confirmed that they reacted with each chemical. AgAuC
In the case of the u alloy, the chemical resistance was greatly improved and the surface was slightly discolored only by adding trace amounts of Au and Cu of 0.1 wt%. Further, it was found that the chemical resistance can be improved to such an extent that no change occurs by increasing the amounts of Au and Cu added.

Next, Tables 5 and 6 show the evaluation results of the stability to heat treatment and the long-term reliability.

[0084]

[Table 5]

[0085]

[Table 6]

Each sample was prepared by forming a film on a slide glass substrate by a sputtering method. The evaluation results shown in Table 4 indicate that the test was performed in an oxygen atmosphere at a temperature of 600 ° C. and 100%.
This is due to visual observation after being left for 4 hours.
The evaluation results shown in Table 5 are based on visual observations after leaving for 1000 hours in an atmosphere at a temperature of 90 degrees and a humidity of 85%.

0.1-3.0 wt% Au, 0.1-
In the AgAuCu alloy to which 3.0 wt% of Cu was added (Table 4), no change was observed even under such a severe high-temperature environment. In addition to these tests, when the same material was left in a 100% oxygen atmosphere at a temperature of 750 ° C. for 24 hours, no change was observed under these conditions.

From these facts, the same material is stable even in a high temperature process of about 750 ° C. After the film is formed, it does not change depending on the temperature without intentionally forming a protective film. It was found that the post heat treatment step after the film could be simplified.

Further, it was confirmed that this material was stable even under a high temperature and a high humidity, and thus it was found that sufficient reliability could be ensured when applied to wiring materials and the like.

Next, Table 7 shows the evaluation results of the chemical resistance in the photolithography process.

[0091]

[Table 7]

Here, Ag-0.9 wt.
% Au-1.0 wt% Cu was deposited to a film thickness of 150 nm to form a sample, and this sample was subjected to resist development, which is a process used in a normal photolithography process.
After resist baking, a change in sheet resistance was observed. Actually, as a developing step, 5% which is a main component of the developing solution is used.
The sample was baked at 120 ° C. for 30 minutes while immersing in a NaOH solution and applying a resist as a resist baking step.

As shown in Table 7, in this sample,
No change in sheet resistance could be observed before and after each of these steps, indicating that it could be applied stably to conventional photolithography steps for stable processing.

Next, Table 8 shows the evaluation results of the adhesion of the AgAuCu film to the underlying material.

[0095]

[Table 8]

In the evaluation of the adhesion, Ti, C
r, W, Ta, Mo metal films, ITO (Indium Tin O
xide), titanium nitride, silicon nitride, oxide of silicon oxide, nitride as a base material, and then AgAuCu
A sample was prepared by forming a film. The thickness of the underlayer is 1
00 nm, and the thickness of the AgAuCu film is 300 nm. The evaluation was performed by etching with a nitric acid-based solution after a film peeling test using a cellophane tape, and then visually observing the presence or absence of a defect such as film peeling to judge.

From the evaluation results, it was found that good adhesion could be ensured except for the case where the base was made of Ti. When the underlayer was Cr, slight peeling was observed, but it is considered that good adhesion can be ensured by optimizing the process by selecting the film forming conditions and the like.

In addition to the evaluation of the adhesion shown in Table 8, an AgAuCu film was formed directly on the substrate, and the adhesion to the substrate itself was evaluated. According to this evaluation, when the substrate is glass such as soda glass, quartz glass, silicon wafer, polycarbonate, acryl, polyethylene terephthalate, etc. Film peeling could not be observed, indicating that good adhesion could be ensured when using these materials as substrates.

Next, Table 9 shows the results of evaluation of the film formation rate by the RF magnetron sputtering method.

[0100]

[Table 9]

In this evaluation, an Ag alloy of each film forming material was used for a 3-inch sputtering target, and a film was formed on a substrate held at a distance of 94 mm from the target.
The time until the film thickness on this substrate became 100 nm was measured.

According to the evaluation results, it was found that when AgAuCu was used as a target, a film could be formed at a rate about three times faster than when Al was used as a target. As a result, it was found that if AgAuCu is used instead of the metal material made of Al, the time required for film formation can be reduced to 1/3, and the time required for manufacturing can be shortened accordingly.

In this evaluation, an improvement in the film formation rate was confirmed even in comparison with the case where Ag was used as the target. Further, it has been found that the temperature rise of the substrate is lower than in the case of using these conventional film forming materials, whereby a plastic substrate can be used as the substrate.

The present invention is not limited to the above embodiment, but can be implemented with various modifications. For example,
The present invention can be widely applied not only to the case of forming a thin film by sputtering or the like, but also to the case of forming another thin film and further to the case of forming a thick film.

[0105]

As described above, according to the present invention, A
By using an alloy containing g as a main component, containing 0.1 wt% or more and 10 wt% or less of Au, and containing 0.1 wt% or more and 5 wt% or less of an element such as Cu as a metal material,
To provide a metal material for electronic parts which has a lower resistivity than before and is stable and excellent in workability, and a method for processing electronic parts, electronic equipment, electronic optical parts, and metal materials using this metal material. Can be.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/285 301 H01L 21/285 301Z 5G323 21/3205 H05K 1/09 A H05K 1/09 BC 3 / 06 M 3/06 H01L 21/88 MF term (Reference) 4E351 AA01 AA06 BB01 BB24 BB29 BB35 CC01 CC03 DD04 DD05 DD06 DD10 DD17 DD19 DD20 DD21 DD31 DD35 DD37 DD58 GG01 GG06 4M104 BB08 BB38 BB39 DD34 DD40 DD43 DD64 DD40 BC03

Claims (28)

[Claims] 1. A metal material for electronic components containing Ag as a main component, containing Au in a range of 0.1 wt% to 10 wt%, and further comprising Cu, A in the Ag-Au alloy material.
1, Ti, Pd, Ni, V, Ta, W, Mo, Cr, R
one or more metal elements from a plurality of metal elements selected from the group consisting of u and Mg are 0.1 wt% or more and 5.0 wt%
% Metal material for electronic parts, characterized by being made of an alloy added in an amount of not more than 10%. 2. The metal material for an electronic component according to claim 1, wherein the metal material for an electronic component is a wiring material. 3. The metal material for an electronic component according to claim 1, wherein the electrical resistivity is 5 μΩcm or less. 4. The electronic component metal material according to claim 1, wherein the electronic component metal material is an electrode material. 5. The metal material for an electronic component according to claim 1, wherein the metal material for an electronic component is a contact material. 6. The metal material for an electronic component according to claim 1, wherein the metal material for an electronic component is a sputtering target material. 7. An electric resistivity of 1.6 μΩcm or more and 5 μΩ.
2. The metal material for electronic components according to claim 1, wherein the metal material is at most cm. 8. An electronic component in which a wiring pattern, an electrode or a contact is formed of a predetermined metal material, wherein the metal material is mainly composed of Ag and Au is 0.1% by weight.
Not less than 10 wt% or less, and the Ag-
Au, Cu, Al, Ti, Pd, Ni, V, T
a, W, Mo, Cr, Ru, Mg, at least one metal element selected from a plurality of metal elements selected from the group consisting of 0.
An electronic component comprising an alloy to which 1 wt% or more and 5.0 wt% or less are added. 9. The electronic component according to claim 8, wherein said wiring pattern, electrode or contact is formed by etching with a solution containing phosphoric acid. 10. The wiring pattern, the electrode or the contact,
The electronic component according to claim 8, wherein the electronic component is formed by etching in a gas atmosphere containing chlorine. 11. The electronic component according to claim 8, wherein portions other than the wiring pattern, the electrodes, and the contacts are processed by etching in a gas atmosphere containing fluorine. 12. The wiring pattern, the electrode or the contact,
The electronic component according to claim 8, wherein the electronic component is heat-treated in a temperature range of 300C to 700C. 13. The wiring pattern, electrode or contact,
W, Ta, Mo, indium oxide, tin oxide, titanium nitride, silicon oxide, silicon nitride, titanium oxide, and niobium oxide. The electronic component according to claim 8, wherein: 14. The wiring pattern, the electrode or the contact,
The electronic component according to claim 8, wherein the electronic component is formed directly on a glass or plastic substrate. 15. A wiring pattern made of a predetermined metal material,
An electronic device provided with an electrode or a contact, wherein the metal material is mainly composed of Ag, and Au is 0.1 wt%.
Not less than 10 wt% or less, and the Ag-
Au, Cu, Al, Ti, Pd, Ni, V, T
a, W, Mo, Cr, Ru, Mg, at least one metal element selected from a plurality of metal elements selected from the group consisting of 0.
An electronic device comprising an electronic component characterized by being made of an alloy to which 1 wt% or more and 5.0 wt% or less are added. 16. The wiring pattern, the electrode or the contact,
The electronic device according to claim 15, wherein the electronic device is formed by etching with a solution containing phosphoric acid. 17. The wiring pattern, electrode or contact,
16. The electronic device according to claim 15, wherein the electronic device is formed by etching in a gas atmosphere containing chlorine. 18. The electronic device according to claim 15, wherein the other parts than the wiring pattern, the electrodes, and the contacts are processed by etching in a gas atmosphere containing fluorine. 19. The wiring pattern, the electrode or the contact,
The electronic device according to claim 15, wherein the electronic device is heat-treated in a temperature range of 300C or more and 750C or less. 20. The wiring pattern, the electrode or the contact,
W, Ta, Mo, indium oxide, tin oxide, titanium nitride, silicon oxide, silicon nitride, titanium oxide, and niobium oxide. Claim 15 characterized by the above-mentioned.
An electronic device according to claim 1. 21. The wiring pattern, the electrode or the contact,
The electronic device according to claim 15, wherein the electronic device is formed directly on a glass or plastic substrate. 22. An alloy containing Ag as a main component and Au in an amount of 0.1 wt.
% To 10 wt% or less, and furthermore Ag
-Cu, Al, Ti, Pd, Ni, V, Au alloy materials
A metal film of an alloy obtained by adding at least one metal element from a plurality of metal elements selected from the group consisting of Ta, W, Mo, Cr, Ru, and Mg is etched by a solution containing phosphoric acid. Forming a wiring pattern, an electrode or a contact by using a metal material. 23. An alloy containing Ag as a main component and Au in an amount of 0.1 wt.
% To 10 wt% or less, and furthermore Ag
-Cu, Al, Ti, Pd, Ni, V, Au alloy materials
Metal film of an alloy formed by adding one or more metal elements from 0.1 wt% to 5.0 wt% from a plurality of metal elements selected from the group consisting of Ta, W, Mo, Cr, Ru and Mg. Is etched in a gas atmosphere containing hydrochloric acid to form a wiring pattern, an electrode or a contact. 24. An alloy containing Ag as a main component and 0.1 wt% of Au.
% To 10 wt% or less, and furthermore Ag
-Cu, Al, Ti, Pd, Ni, V, Au alloy materials
It is formed of an alloy obtained by adding one or more metal elements from 0.1 wt% to 5.0 wt% from a plurality of metal elements selected from the group consisting of Ta, W, Mo, Cr, Ru, and Mg. Processing a material other than the metal film by etching the metal film in a gas atmosphere containing fluorine. 25. Ag as a main component and 0.1 wt% of Au
% To 10 wt% or less, and furthermore Ag
-Cu, Al, Ti, Pd, Ni, V, Au alloy materials
It is formed of an alloy obtained by adding one or more metal elements from a plurality of metal elements selected from the group consisting of Ta, W, Mo, Cr, Ru, and Mg to 0.1 wt% or more and 5.0 wt% or less. A heat treatment of the metal film in a temperature range of 300 ° C. or more and 750 ° C. or less to form a wiring pattern, an electrode, or a contact. 26. Main component of Ag and 0.1 wt% of Au
% To 10 wt% or less, and furthermore Ag
-Cu, Al, Ti, Pd, Ni, V, Au alloy materials
Using an alloy obtained by adding one or more metal elements from 0.1 wt% to 5.0 wt% from a plurality of metal elements selected from the group consisting of Ta, W, Mo, Cr, Ru, and Mg. The metal film to be formed is formed on a base made of any of W, Ta, Mo, indium tin oxide, titanium nitride, silicon oxide, and silicon nitride to form a wiring pattern, an electrode, or a contact. Processing method of metal material. 27. A composition containing Ag as a main component and 0.1 wt% of Au.
% To 10 wt% or less, and furthermore Ag
-Cu, Al, Ti, Pd, Ni, V, Au alloy materials
It is formed of an alloy obtained by adding one or more metal elements from a plurality of metal elements selected from the group consisting of Ta, W, Mo, Cr, Ru, and Mg to 0.1 wt% or more and 5.0 wt% or less. A metal film formed directly on a glass or plastic substrate to form a wiring pattern, an electrode or a contact. 28. Ag as a main component, and 0.1 wt% of Au
% To 10 wt% or less, and furthermore Ag
-Cu, Al, Ti, Pd, Ni, V, Au alloy materials
It is formed of an alloy obtained by adding one or more metal elements from 0.1 wt% to 5.0 wt% from a plurality of metal elements selected from the group consisting of Ta, W, Mo, Cr, Ru, and Mg. An electronic component, wherein the metal film is used for a reflective film, an electrode, a wiring material, or any one or more purposes.