JP2002016165A - Package for element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a package of an element capable of suppressing trapping of He gas in an insulation substrate composed of glass ceramics and evaluating and guaranteeing the airtightness. SOLUTION: This package A of the element is provided with an insulation substrate 1 where a semiconductor element 3 is mounted on the surface and a lid 7 for airtightly sealing the semiconductor element 3. The insulation substrate 1 is composed of the glass ceramics of an open porosity <=2% containing ceramic fillers and a glass phase containing an alkali metal and/or alkali earth metal whose main component is SiO2 at least. When the insulation substrate 1 is exposed for two hours in the He gas of 25 deg.C and 4.1 MPa, an He absorption amount into the insulation substrate 1 is equal to or mess than 5×10-8 atm.cc/sec.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package for storing an element, and more particularly to a package for storing an element using He gas, which can evaluate airtightness and assure quality of the package.

[0002]

2. Description of the Related Art Conventionally, alumina ceramics having excellent properties such as electrical insulation and chemical stability have been frequently used as ceramic packages for housing semiconductor elements and filter elements.

However, in recent years, ceramic packages that are frequently used in the high-frequency range of 800 MHz or higher in the communication field represented by mobile phones have been required to further reduce the conductor loss and reduce the size more than the insulating substrate made of alumina ceramics. Therefore, the conductor wiring layer must be made of copper (C
A glass ceramic package formed of a low-resistance conductor such as u), gold (Au), and silver (Ag), and an insulating substrate formed of a glass ceramic sintered body having a dielectric constant similar to that of alumina ceramics has attracted attention.

[0004] The present applicant has disclosed in Japanese Patent Application Laid-Open No. 10-2759.
In Japanese Patent No. 63, in order to reduce the dielectric constant and the dielectric loss, which are the high frequency characteristics of a package using glass ceramics used in a high frequency band as an insulating substrate, it is necessary to increase the content ratio of SiO ₂ present in the glass ceramics. Proposed to be effective.

On the other hand, a ceramic package using a glass ceramic sintered body as an insulating substrate is, for example, a glass ceramic raw material powder composed of a glass powder such as a so-called crystallized glass and a ceramic filler powder which precipitates a crystal phase during firing. Then, a slurry prepared using an organic binder or the like is formed into a sheet to form a green sheet, and a via hole or a cavity for mounting a semiconductor element or the like is punched into the green sheet, and then a low resistance is formed in the via hole. A conductive paste containing a metal as a main component is filled, and a similar conductive paste is printed and applied on a wiring pattern on the green sheet, a plurality of these are aligned and laminated and integrated, and then a nitrogen atmosphere containing water vapor is applied. Debinding and firing in a non-oxidizing atmosphere consisting of More it is produced.

Thereafter, the semiconductor element is mounted on the surface of the fired substrate, and a lid made of ceramics or metal is bonded to the substrate, whereby the semiconductor element can be hermetically sealed.

In such a package, as a method of evaluating the hermetic reliability, MIL-STA is generally used.
NDARD: Method 1014 of 883 is used.
In this method, a package hermetically sealed by a lid is placed in a hermetic chamber, pressurized with He gas under predetermined conditions, the package is taken out, and then He gas pressed into the package using a leak detector. The hermeticity is evaluated by extracting the He gas in a vacuum and measuring the concentration of the He gas extracted. The lower the detected He gas concentration is, the higher the hermeticity is evaluated.

[0008]

However, as described above, in a package using a glass ceramic containing a glass phase mainly composed of SiO ₂ as an insulating substrate,
When the above-described airtightness is evaluated, He is trapped in the glass ceramics during the pressurization treatment in He gas, and He trapped in a vacuum is drawn out. Trapped in the glass ceramic in addition to the He gas observed by
Since the e-gas is released to the outside of the glass ceramic and detected, the sealing property of the lid cannot be measured accurately, and there has been a problem that the hermeticity of the ceramic package cannot be guaranteed.

Regarding the hermetic sealing performance of a ceramic package using a glass ceramic sintered body as an insulating substrate, for example, Japanese Utility Model Publication No. 7-9382 proposes improvement of metallized bonding strength at a sealing portion by Pb-Sn solder. At present, the trap phenomenon of He gas is hardly studied.

[0010] Therefore, the present invention provides a glass ceramic having an extremely small number of He gas traps as an insulating substrate;
It is an object of the present invention to provide an element housing package that can guarantee gas tightness accurately using gas.

[0011]

Means for Solving the Problems The present inventor has set forth the above-mentioned gala.
Of various trapping phenomena of He gas in ceramics
The examination was repeated. As a result, first, glass ceramic
He gas in the voids (pores) generated when firing
Molecules are trapped, secondly, SiO 2 _TwoThe main
The glass phase to be separated is SiO_TwoOf Si-O formed by
Network is formed, but this Si-O network
There is a gap in the work, and the inside of this gap is airtight.
The high-pressure He gas molecules introduced during the evaluation pass through.
He gas molecules are trapped in the glass
It is thought that it is caused by being pushed.

[0012] As a result of studied how to prevent the trapping of He molecules to glass phase comprising SiO ₂ as a main component, containing glass and the alkali metal and / or alkaline earth metal mainly composed of SiO ₂ A mixture of an oxide and a ceramic filler, or a mixture of a glass and a ceramic filler containing SiO ₂ as a main component and containing an alkali metal and / or an alkaline earth metal, at a temperature at least 10 ° C. lower than the softening point of the glass. By raising the temperature above the softening point of the glass at a rate of 10 ° C./min or less and firing, the open porosity of the obtained glass ceramic can be reduced, and the glass ceramic is formed by the Si—O network. As a result that the alkali metal and / or alkaline earth metal can be present in the voids, Because it can suppress the trapping of He in the glass ceramics to slow the permeation rate of He to Las ceramics in to suppress the trap phenomenon of He, accurate assessment of airtightness found that is possible.

That is, the element storage package of the present invention comprises:
An element storage package comprising: an insulating substrate on which an element is mounted on a surface; and a lid provided on the surface of the insulating substrate to hermetically seal the element, wherein the insulating substrate mainly includes at least SiO ₂ . As a component, it is made of glass ceramics having an open porosity of 2% or less containing a glass phase containing an alkali metal and / or an alkaline earth metal and a ceramic filler.
When exposed to He gas of Pa for 2 hours, the amount of He absorbed into the insulating substrate is 5 × 10 ⁻⁸ atm · cc / sec or less.

Here, in the above glass ceramics, in particular, enstatite, slausonite, anorthite,
Celsian, cordierite, spinel, garnite,
Quartz, akamenite, strontium titanate,
At least one selected from the group consisting of calcium titanate, barium titanate, magnesium titanate, forsterite, strontium silicate, calcium silicate, barium silicate, lithium silicate, lithium aluminosilicate, potassium silicate, potassium aluminosilicate, sodium silicate, sodium aluminosilicate Desirably, one is deposited from the glass.

Further, the content of SiO _{2 in} the glass phase is 70% by weight or less;
The content of alkali metal and / or alkaline earth metal in 100 parts by weight of O ₂ is 5 in total as oxides.
It is 400 parts by weight, it is desirable that the content of PbO and / or B ₂ O ₃ of the glass phase is less than 40 wt% in total.

Further, the ceramic filler is Al
₂ O ₃ , SiO ₂ , enstatite, slausonite, anorthite, Celsian, cordierite, spinel,
Akemenite, strontium titanate, calcium titanate, barium titanate, magnesium titanate,
Forsterite, strontium silicate, calcium silicate, barium silicate, lithium silicate, lithium aluminosilicate, potassium silicate, potassium aluminosilicate, sodium silicate and sodium aluminosilicate are preferably used.

It is preferable that a conductive wiring layer containing Cu or Ag as a main component is provided on the surface and / or inside of the insulating substrate.

Further, the method for manufacturing a package for accommodating an element according to the present invention is directed to a method for manufacturing a glass containing at least SiO ₂ as a main component and containing an alkali metal and / or an alkaline earth metal.
0-95% by weight and ceramic filler 5-50% by weight
The mixture containing the door, or at least a glass 50-95% by weight of SiO ₂ as a main component and the sum of the complex oxide and a ceramic filler containing an alkali metal and / or alkaline earth metal from 5 to 50 wt% And forming a green sheet by molding a mixture containing the mixture at a rate of at least 10 ° C. lower than the softening point of the glass at a temperature rising rate of 10 ° C./min or less at a temperature above the softening point of the glass, After firing to produce an insulating substrate made of glass ceramic, the surface of the insulating substrate including the semiconductor element mounting portion on the surface of the insulating substrate is sealed with a lid.

Further, it is desirable that the glass is a powder having an average particle diameter of 3 μm or less.

[0020]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic sectional view showing an example of an element storage package according to the present invention. According to FIG. 1, a package A for device storage has a conductor wiring layer 2 made of a low melting point metal such as Au, Ag, Cu, etc. formed on a surface of an insulating substrate 1 made of glass ceramics. 2 is a semiconductor element 3 mounted on the surface of the insulating substrate 1
And are electrically connected by wire bonding 4 or the like.

According to the present invention, the insulating substrate 1 is made of a glass ceramic containing SiO ₂ as a main component, a glass phase containing an alkali metal and / or an alkaline earth metal, and a ceramic filler.
Has an open porosity of 2% or less, particularly 1% or less, further 0.5%
It is important that:

That is, if the open porosity of the above glass ceramic is more than 2%, H trapped in the insulating substrate
e, the accurate hermetic sealing of the package cannot be evaluated, and the glass phase is SiO 2
_In the case where the content of SiO _{2 in} the glass phase is mainly 55% by weight or more, particularly 60% by weight or more, if the alkali metal and / or alkaline earth metal is not contained, Si— This is because the amount of He trapped in the voids existing in the O network increases, so that accurate hermetic sealing of the package cannot be evaluated.

When the content of SiO _{2 in} the glass phase increases, the dielectric loss of the glass ceramic in a high frequency band such as a millimeter wave can be reduced, and even when a high frequency signal is transmitted to the conductor wiring layers 2 and 5. Signal transmission loss can be reduced. From the viewpoint of reducing the amount of He traps in the glass phase, the content of SiO ₂ in the glass phase is desirably 70% by weight or less, particularly preferably 65% by weight or less.

Further, alkali metal (Li, Na, K, Rb) in the glass phase is used in order to reduce the pore size existing in the Si—O network and to reduce the dielectric loss of the glass ceramic in a high frequency band. And the content of alkaline earth metals (Mg, Ca, Sr, Ba) is preferably 5 to 50% by weight, especially 9 to 30% by weight in terms of oxides, and particularly preferably 10 to 30% by weight.
% By weight, more preferably 1% by weight or less, and preferably contains Sr as an essential element among alkaline earth metals.

In the present invention, the open porosity is defined as
This is based on the area ratio of 20 pores obtained from a scanning electron micrograph (SEM) of the insulating substrate surface.

The glass phase may contain various metal elements such as Al, B, Zr, Ti and Zn, depending on the glass and filler used, in addition to Si, alkali metal and alkaline earth metal. However, as long as the amounts of Si, alkali metals and alkaline earth metals do not deviate from the above ranges, there is no problem even if the other metals are contained.

Further, in order to reduce the dielectric loss of the above-mentioned glass ceramics in a high frequency band, it is necessary to use Pb in the glass phase.
The content of O, P ₂ O ₅ and B ₂ O ₃ is 40% by weight or less, particularly 20% by weight or less, and
It is desirable that the content of bO be 10% by weight or less, particularly 5% by weight or less, further preferably 1% by weight or less.

In the above glass ceramics, for example, enstatite (MgSiO ₃ ),
Slausonite (SrAl ₂ Si ₂ O ₈ ), anorthite (CaAl ₂ Si ₂ O ₈ ), Celsian (BaAl ₂ Si ₂₎
O ₈ ), cordierite (Mg ₂ Al ₄ Si ₅ O ₁₈ ), spinel (MgAl ₂ O ₄ ), garnite (ZnAl ₂ O ₄ ),
Quartz (SiO ₂ ), akamenite (Sr ₂ MgSi)
₂ O ₇ ), strontium titanate (SrTiO ₃ ), calcium titanate (CaTiO ₃ ), barium titanate (BaTiO ₃ ), magnesium titanate (MgTi
O ₃ ), forsterite (MgSiO ₄ ), strontium silicate (SrSiO ₃ ), calcium silicate (CaSiO ₃ ), barium silicate (BaSi)
O ₃ ), lithium silicate (Li ₂ SiO ₃ ), lithium aluminosilicate, potassium silicate (K ₂ Si)
O ₃ ), potassium aluminosilicate, sodium silicate (Na ₂ SiO ₃ ), and at least one crystal phase selected from the group of sodium aluminosilicate are desirably precipitated, thereby causing the He gas molecule trap (adsorption). In addition, the content ratio of each component in the glass phase that determines the high-frequency characteristics is optimized, and it is possible to reduce the dielectric loss, increase the strength, and adjust the dielectric constant and the coefficient of thermal expansion.

In order to reduce the transmission loss of high-frequency signals transmitted through the conductor wiring layer 2 in the above-described crystal phase, which has low dielectric loss in the millimeter wave band, anorthite, slausonite, cellian, akemenite, titanic acid At least one selected from the group consisting of strontium, calcium titanate, barium titanate, strontium silicate, calcium silicate, and barium silicate, and further preferably slausonite are used.

On the other hand, as the ceramic filler, Al
₂ O ₃ , SiO ₂ , enstatite, slausonite, anorthite, Celsian, cordierite, spinel,
At least one selected from the group consisting of akemenite, strontium titanate, calcium titanate, barium titanate, forsterite, strontium silicate, calcium silicate, and barium silicate is preferable.

On the back surface of the insulating substrate 1, a conductor wiring layer 5 for connecting to another electric circuit by a brazing material such as solder is formed. The conductor wiring layer 5 includes
In some cases, connection terminals such as solder balls and lead pins are attached to connect to other electric circuits. The conductor wiring layer 5 is electrically connected to the conductor wiring layer 2 formed on the surface of the insulating substrate 1 by a through-hole conductor 6 and the like.

The conductor wiring layer 2 and the conductor wiring layer 5
0 MHz or more, desirably 1 GHz or more, especially 20 GH
When transmitting a high frequency signal of z or more, the conductor wiring layer 2
The conductor wiring layer 5 is desirably formed of one of a strip line, a microstrip line, a coplanar line, and a waveguide line in order to reduce transmission loss.

The lid 7 is made of an insulating material, in particular, the same glass ceramic as the insulating substrate 1, or a cover (Fe—Ni—C).
o, thermal expansion coefficient 5-6 × 10 ⁻⁶ / ° C.), 42 alloy (thermal expansion coefficient 9-10 × 10 ⁻⁶ / ° C.), 50 alloy (thermal expansion coefficient 6.5-7.5 × 10 ⁻⁶⁾ / ° C), copper (coefficient of thermal expansion 1)
9 × 10 ⁻⁶ / ° C.) or the like, and is joined to the conductor wiring layer 2 formed for sealing by a sealing metal layer 8 such as solder. The difference between the coefficient of thermal expansion and the coefficient of thermal expansion of the lid 7 is 1 × 1 in that the hermetic sealing of the cavity 9 in which the semiconductor element 3 is housed is improved.
Desirably, it is 0 ^-6 / ° C or less.

Further, on the back surface of the insulating substrate 1 on which the semiconductor element 3 is mounted, other electronic components such as a patch antenna, a planar antenna, a slot antenna, etc., a filter, a capacitor, and a resonator can be mounted.

To manufacture such a package, S
glass containing iO _2, for example, a glass powder containing SiO _2, B ₂ O ₃ and Al ₂ O ₃ 50 to 95 wt%,
A ceramic filler powder containing an alkali metal and / or alkaline earth metal oxide is added and mixed at a ratio of 5 to 50% by weight. The compounding ratio of glass powder and ceramic filler powder is such that the conductor wiring layer is made of a low-melting metal such as copper or silver during package fabrication, and is suitable for simultaneous firing with the conductor wiring layer at a temperature higher than the softening point of glass. The density is determined so that the density can be increased to a relative density of 95% or more, particularly an open porosity of 2% or less at a temperature of 800 to 1000 ° C.

The amount of glass powder is less than 50% by weight,
If the amount of the ceramic powder is more than 50% by weight, sintering is poor and the ceramic cannot be densified in many cases.
More than 5% by weight, ceramic filler amount is 5% by weight
If less, the firing shrinkage proceeds from a lower temperature, so that when the conductor wiring layer is formed of copper, N ₂ + H ₂ O
This is because it becomes difficult to sufficiently remove the organic binder in such an atmosphere.

As the glass containing SiO ₂ , borosilicate crystallized glass which can be sintered at a temperature of 800 to 1000 ° C. can be suitably used, and SiO ₂ , B ₂ O ₃ , Al ₂
In addition to O ₃ , alkali metal oxides such as Li ₂ O, Na ₂ O, K ₂ O, alkaline earth metals such as CaO, MgO, and BaO, and ZrO ₂ , ZnO, TiO _{2 and the} like may be contained. Good.

B ₂ O ₃ in the glass is a component that promotes the formation of a liquid phase at a low temperature and promotes sinterability at a low temperature, and Al ₂ O ₃ is an alkaline earth metal described later. Oxides and S
The reaction with iO ₂ serves to promote the precipitation of the crystalline phase and to reduce the amount of SiO ₂ in the amorphous phase.

[0039] Therefore, in the glass raw material, the SiO ₂ 3
0-70% by weight, the B ₂ O ₃ 5 to 20 wt%, it is desirable that the Al ₂ O ₃ in a proportion of 10 to 40 wt%. In addition, the particle size of the glass powder improves the sinterability, lowers the open porosity, and improves the dispersibility of the alkali metal and / or alkaline earth metal in the glass phase Si-O network. It is preferably 3 μm or less, particularly preferably 1.8 μm or less.

On the other hand, as the ceramic filler containing an alkaline earth metal oxide, CaZrO ₃ and CaTi are particularly preferred in that they have high reactivity with borosilicate glass.
O ₃ , SrTiO ₃ , SrZrO ₃ , SrSiO ₃ , BaT
At least one of iO ₃ and MgTiO ₃ is preferred. These fillers react with the borosilicate crystallized glass during firing to decompose the alkaline earth metal oxide, and the decomposed alkaline earth metal oxide becomes SiO _{2 in} the glass.
And Al ₂ O ₃ to react with anorthite (CaO.Al ₂
O ₃ · 2SiO ₂ ) and cordierite (2MgO · 2Al)
A composite oxide crystal phase of SiO ₂ —Al ₂ O ₃ —alkaline earth metal oxide, such as ₂ O ₃ .5SiO ₂ ) is deposited. By the precipitation of the composite oxide crystal phase by such a reaction, S in the amorphous phase existing between the crystal phases in the final sintered body is obtained.
The amount of iO ₂ can be adjusted.

When the above-mentioned crystalline phase is precipitated, all of the alkaline earth metal contained in the sintered body is not consumed as a crystalline phase but remains in the amorphous phase. By allowing the amount of alkaline earth metal to be larger than that consumed for crystallization, the amount of alkaline earth metal in the amorphous phase can be increased.

An organic binder for molding, a plasticizer, and a solvent are added to the mixed powder thus prepared to form a slurry. As the organic binder, a methacrylic acid-based resin having excellent thermal decomposability at a low temperature is preferable.
It is preferable to use dibutyl phthalate as the plasticizer and toluene as the solvent.

Next, the obtained slurry is formed into green sheets by a doctor blade method, and via holes and cavities are formed on the green sheets by punching, micro drilling, laser or the like as appropriate, and Au, Ag, After filling a conductive paste containing a low melting point metal powder such as Cu, a wiring pattern is printed by a screen printing method or the like using the same conductive paste. A conductor paste is printed and applied on a green sheet to be a surface layer of the insulating substrate in a sealing metal layer pattern for joining the lid.

In the conductor paste, in addition to the low-melting-point metal powder, glass whose softening point has been adjusted to improve the warpage during firing and the bonding strength of the conductor, an organic binder,
Add solvent and mix. If Cu is used as the conductive material, it is necessary to remove the binder in a non-oxidizing atmosphere. Therefore, a methacrylic acid-based resin with excellent thermal decomposability should be used as the binder of the conductive paste as well as the green sheet. Is desirable.

After laminating and integrating a plurality of green sheets produced as described above, the binder is removed at least at a temperature lower than the softening temperature of the glass by 10 ° C., for example, 700 to 800 ° C. Above binder temperature,
That is, 10 ° C or more, especially 20 ° C, from the softening temperature of glass
In addition, the heating rate at a temperature lower than 30 ° C.
C./min. Or less, especially 6 C./min., More preferably 800.degree. C. or more at a rate of 4.degree. C./min.
Bake at a temperature of ~ 1000 ° C.

Here, 10 ° C. below the softening temperature of the above glass
If the rate of temperature rise above the lower temperature is faster than 10 ° C./min,
As a result that voids are generated in the glass ceramics constituting the insulating substrate 1 and the open porosity of the insulating substrate 1 exceeds 2%, the amount of He traps in the insulating substrate 1 is 5 × 10 ⁻⁸ atm · cc.
/ Sec, and the sealing property of the package cannot be accurately evaluated.

In the case of the above-described firing, firing is performed in the air when a conductor material mainly containing Ag is used, and firing is performed in an atmosphere in which steam is mixed with nitrogen when a conductive material mainly containing Cu is used. It is desirable. Thereafter, when Cu is used as the conductive material, the plated substrate is plated with Au over Ni or Cu.

After an element such as a semiconductor element such as Si, GaAs, or SiGe or a filter element is flip-chip mounted or wire-bonded on the substrate surface, a lid is bonded to the substrate surface so as to cover the element. The lid is joined by Au-based brazing material such as Au-Ge or Au-Sn or Pb
A semiconductor device in which a semiconductor element is hermetically sealed can be manufactured by bonding a sealing metal layer to a substrate surface using solder such as -Sn or Pb-based glass.

[0049]

EXAMPLE A glass powder having the components and average particle diameters shown in Table 1 was prepared.

[0050]

[Table 1]

A ceramic filler was added to the glass powder shown in Table 1 at a ratio shown in Tables 2 and 3, and an isobutyl methacrylate resin as an organic binder was added in a solid content of 1%.
A slurry was prepared by adding 2% by weight and 6% by weight of dibutyl phthalate as a plasticizer, and mixing with toluene and ethyl acetate as solvents in a ball mill for 40 hours. The slurry was used to form a sheet into a glass ceramic green sheet having a thickness of 0.3 mm by a doctor blade method.

Next, a via hole is opened at a predetermined position of the green sheet, a conductive paste is filled, and a metallized conductor wiring layer having a predetermined pattern is formed at a predetermined position on the surface of the green sheet by a screen printing method. 10 to 20 green sheets were stacked and pressure-laminated.

Then, the laminate was subjected to a binder removal treatment at 750 ° C. for 3 hours in a nitrogen atmosphere containing water vapor, and then fired at a heating rate and temperature shown in Tables 2 and 3 to obtain a laminate having a thickness of 50 mm.
A wiring board having a size of 50 mm was manufactured.

The open porosity of the fabricated wiring board was measured by a Luzex analysis method from a scanning electron microscope (SEM) photograph of the surface. Further, the X-ray diffraction measurement of the insulating substrate was performed, and the ratio of the detected crystal phase and the glass phase in the porcelain was calculated by the Rietveld method. further,
While observing the composition of the glass phase present at the grain boundary of the crystal phase of the insulating substrate with a transmission electron micrograph, analysis was performed by energy dispersive X-ray spectrum analysis (EDS) and electron energy loss spectrum analysis (EELS). ,
The ratio of SiO ₂ in the glass phase was calculated.

Then, this ceramic substrate is set to 4.1MP.
After exposure to He gas of a for 2 hours,
The amount of He released from the glass ceramic substrate was measured by an e leak detector, and the results are shown in Tables 2 and 3 as the amount of He absorbed.

Further, the green sheets described above were
Five sheets were laminated to produce a glass ceramic under the same conditions as described above, cut into a shape having a diameter of 50 mm and a thickness of 1 mm, and a dielectric constant and a dielectric constant were determined by a cavity resonator method at 2 GHz using a network analyzer and a synthesized sweeper. The loss was measured. In the measurement, the dielectric resonator was excited by the non-radiative dielectric line, and the dielectric constant and the dielectric loss were calculated from the resonance characteristics of the _TE011 mode.

Further, a thermal expansion curve from room temperature (25 ° C.) to 400 ° C. was obtained to calculate a thermal expansion coefficient. Result is,
The results are shown in Tables 2 and 3.

[0058]

[Table 2]

[0059]

[Table 3]

The results of Tables 2 and 3 show that the sample No. containing no alkali metal or alkaline earth metal in the glass phase containing Si as a main component. 1, the open porosity is small, but He
The trap amount of Sample No. was larger than 1 × 10 ⁻⁸ atm · cc / min, and the ratio of the glass raw material was less than 50% by weight. In 11, 12, and 14, the open porosity of the insulating substrate was increased, and the He trap amount was increased. further,
Sample No. whose heating rate at a temperature lower than the softening point of the glass raw material by 10 ° C. or higher is higher than 10 ° C./min. In Nos. 9 and 16, the diffusion rate of the alkaline earth metal into the glass phase was slow, and the amount of voids in the glass ceramics increased, resulting in an increase in the amount of He adsorption.

On the other hand, at least 50% by weight or more of a glass raw material containing Si as a main component and a predetermined ceramic component are mixed, and at least 10% from the softening point of the glass raw material.
The sample No. fired at a temperature equal to or higher than the softening point of the glass at a temperature raising rate lower than 10 ° C./min at a temperature lower than or equal to lower than 10 ° C.
In any of 2 to ⁸ , 10, 13, 15, 17 to 19, the open porosity is 2% or less and the He adsorption amount is 5 × 10 ⁻⁸ atm ·
cc / sec or less.

Further, in the above-mentioned He trap property evaluation test, H
e of a wiring board (No. 2 to 8, 10, 13, 15, 17 to 19) having an emission amount of 1 × 10 ⁻⁸ atm · cc / s or less, outer side size: 8 mm × 8 mm, thickness: 1. 5m
m, a package having a cavity size of 6 mm × 6 mm and a cavity depth of 1 mm. A metal layer for sealing with a Cu conductor was provided around the cavity in the surface layer of the package. After having been subjected to Ni-Au plating in this sealing metal layer, 50 alloy or 42 alloy metal lid (respective thermal expansion coefficient 6.9 × 10 ^-6 /℃,9.5×10 ^-6 /
° C) with an Au-Sn brazing material.

Then, the produced package is set to 4.1MP.
a for 2 hours and left for 20 minutes
The amount of He leaking from the package in a vacuum using an e-leak detector was measured. The amount of leak was sample No. 2
Each of the packages ⁸ , 10, 13, 15, and 17 to 19 is 1 × 10 ⁻⁸ atm · cc / sec or less, and is 5 × 10 ⁻⁸ atm · c which is a criterion of airtightness of the package.
c / sec or less was satisfied.

[0064]

As described in detail above, the element storage package of the present invention has an open package containing SiO ₂ as a main component, a glass phase containing an alkali metal and / or an alkaline earth metal, and a ceramic filler. By using a glass ceramic having a porosity of 2% or less as an insulating substrate, the amount of He trapped in the insulating substrate can be reduced. Therefore, a ceramic package including a conductor wiring layer made of a low melting point metal such as Cu is used. Can be evaluated for airtightness and quality assurance.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view for explaining an example of an element storage package of the present invention.

[Explanation of symbols]

 A Package for element storage 1 Insulating substrate 2, 5 Conductor wiring layer 3 Semiconductor element 4 Wire bonding 6 Through-hole conductor 7 Lid 8 Sealing metal layer 9 Cavity

Claims (11)

[Claims] 1. An element storage package comprising: an insulating substrate on which a device is mounted on a surface; and a lid provided on the surface of the insulating substrate to hermetically seal the device, wherein the insulating substrate comprises: The insulating substrate is made of a glass ceramic having an open porosity of 2% or less containing at least SiO ₂ as a main component, a glass phase containing an alkali metal and / or an alkaline earth metal, and a ceramic filler.
When exposed to He gas at 4.1 ° C. and 4.1 MPa for 2 hours, the amount of He adsorbed on the insulating substrate was 5 × 10 ⁻⁸ atm · cc /.
An element storage package, wherein the length is not more than sec. 2. The package according to claim 1, wherein a crystal phase is precipitated from the glass in the glass ceramic. 3. The crystal phase precipitated from the glass is enstatite, slausonite, anorthite, serdian, cordierite, spinel, garnite, quartz, akemenite, strontium titanate, calcium titanate, barium titanate, magnesium titanate. , Forsterite, strontium silicate, calcium silicate, barium silicate, lithium silicate, lithium aluminosilicate, potassium silicate, potassium aluminosilicate, sodium silicate, at least one selected from the group consisting of sodium aluminosilicate. Item 1
Or the element storage package according to 2. 4. The method according to claim 1, wherein the content of SiO _{2 in} said glass phase is 70.
4. The package for accommodating an element according to claim 1, wherein the content is not more than% by weight. 5. The method according to claim 4, wherein the content of the alkali metal and / or the alkaline earth metal relative to 100 parts by weight of SiO ₂ in the glass phase is 5 to 400 parts by weight in terms of oxide. An element storage package as described in the above. 6. PbO and / or B in the glass phase
6. The element storage package according to claim 1, wherein the total content of ₂ O ₃ is 40% by weight or less. 7. The method according to claim 1, wherein the ceramic filler is Al ₂ O ₃ , S
iO ₂ , enstatite, slausonite, anorthite, celsian, cordierite, spinel, akemenite, strontium titanate, calcium titanate, barium titanate, magnesium titanate, forsterite, strontium silicate, calcium silicate, barium silicate, lithium silicate ,
7. The package according to claim 1, comprising at least one selected from the group consisting of lithium aluminosilicate, potassium silicate, potassium aluminosilicate, sodium silicate and sodium aluminosilicate. 8. The element storage package according to claim 1, further comprising a conductor wiring layer containing Cu or Ag as a main component on the surface and / or inside of the insulating substrate. 9. A mixture containing 50 to 95% by weight of glass containing at least SiO ₂ as a main component and containing an alkali metal and / or alkaline earth metal and 5 to 50% by weight of a ceramic filler is formed. A green sheet was prepared, and the temperature was raised at a temperature of at least 10 ° C. lower than the softening point of the glass to a temperature higher than the softening point of the glass at a rate of 10 ° C./min or less, followed by firing to prepare an insulating substrate made of glass ceramic. Thereafter, the surface of the insulating substrate including the semiconductor element mounting portion on the surface of the insulating substrate is sealed with a lid. 10. A glass comprising 50 to 95% by weight of at least SiO ₂ as a main component, and a total of 5 to 50% by weight of a composite oxide containing an alkali metal and / or an alkaline earth metal and a ceramic filler. A green sheet is formed by molding a mixture containing the mixture at a ratio of at least 10 ° C./min or less at a temperature lower than the softening point of the glass by 10 ° C./min. A method for manufacturing an element storage package, comprising: preparing an insulating substrate made of glass ceramic, and sealing the surface of the insulating substrate including a semiconductor element mounting portion on the surface of the insulating substrate with a lid. 11. The method according to claim 9, wherein said glass is a powder having an average particle diameter of 3 μm or less.