JP2002099098A - Method of producing photoresist composition decreased in amount of minute particles - Google Patents
Method of producing photoresist composition decreased in amount of minute particlesInfo
- Publication number
- JP2002099098A JP2002099098A JP2000288257A JP2000288257A JP2002099098A JP 2002099098 A JP2002099098 A JP 2002099098A JP 2000288257 A JP2000288257 A JP 2000288257A JP 2000288257 A JP2000288257 A JP 2000288257A JP 2002099098 A JP2002099098 A JP 2002099098A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist composition
- filter
- ptfe
- amount
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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- Separation Using Semi-Permeable Membranes (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、紫外線、遠紫外線
(エキシマーレーザー等を含む)、電子線、X線または
放射光のような高エネルギーの放射線によって作用する
リソグラフィなどに適したフォトレジスト組成物の製造
法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoresist composition suitable for lithography and the like, which is acted on by high-energy radiation such as ultraviolet rays, far ultraviolet rays (including excimer lasers, etc.), electron beams, X-rays or radiation. The method relates to a method for producing the same.
【0002】[0002]
【従来の技術、発明が解決しようとする課題】フォトレ
ジスト組成物は、電子計算機などに使用されているI
C、LSI等の製造工程における微細精密加工のパター
ン形成材料として用いられており、LSI等の高集積化
に伴い、集積回路のデザインルールも0.35μmから
0.15μmへ微細化している。このような微細加工に
用いられるフォトレジスト組成物には、基本的性能(解
像度、感度、プロファイル、塗布性等)以外に、目視で
は観察しえない微細粒子が少ないこと、および長期保存
後も微細粒子が顕著に増加しないこと(換言すれば良好
な保存安定性を有すること)が要求されている。そし
て、この要求は、フォトレジスト組成物中の微細粒子が
多い場合、該フォトレジスト組成物から形成されたレジ
ストパターンを介して基板をエッチングすると、しばし
ば、レジストパターンにより覆われた基板部分にピンホ
ールが発生し、集積回路作製時の歩留りが悪化すること
に由来している。2. Description of the Related Art Photoresist compositions are used in electronic computers and the like.
It is used as a pattern forming material for micro-precision processing in the manufacturing process of C, LSI, and the like, and the design rules of integrated circuits have been reduced from 0.35 μm to 0.15 μm with the increase in integration of LSIs and the like. Photoresist compositions used for such microfabrication include, besides basic performance (resolution, sensitivity, profile, coatability, etc.), few fine particles that cannot be observed visually, and fine even after long-term storage. It is required that the particles do not increase significantly (in other words, they have good storage stability). And this requirement is that when there are many fine particles in the photoresist composition, when the substrate is etched through a resist pattern formed from the photoresist composition, often a pinhole is formed in the substrate portion covered by the resist pattern. Is caused, and the yield at the time of manufacturing an integrated circuit is deteriorated.
【0003】そこで、フォトレジスト組成物中の微細粒
子を除くため、フィルターを用いた濾過が行われている
が、目詰まりが惹起されるため、微細粒子の除去に長時
間を要するという工業上の問題があった。[0003] In order to remove fine particles from the photoresist composition, filtration using a filter is performed. However, since clogging is caused, it takes a long time to remove the fine particles from an industrial viewpoint. There was a problem.
【0004】[0004]
【課題を解決するための手段】本発明者等は、かかる問
題点を解決すべく、鋭意検討を重ねた結果、フィルター
として、ポリエチレン(以下、PEと略称する)及びポリ
テトラフルオロエチレン(以下、PTFEと略称する)か
らなる複合膜で構成されているという特定のフィルター
用いることにより、目詰まりを抑制し得、濾過時間を著
しく短縮できることを見出し、本発明を完成した。すな
わち本発明は、フォトレジスト組成物をPE及びPTF
Eからなる複合膜で構成されているフィルターに通過さ
せることを特徴とする微細粒子量の低減されたフォトレ
ジスト組成物の製法を提供するものである。Means for Solving the Problems The present inventors have conducted intensive studies in order to solve such problems, and as a result, as a filter, polyethylene (hereinafter abbreviated as PE) and polytetrafluoroethylene (hereinafter abbreviated as PE) have been used as filters. It has been found that clogging can be suppressed and the filtration time can be remarkably reduced by using a specific filter composed of a composite membrane made of PTFE), and the present invention has been completed. That is, the present invention provides a photoresist composition comprising PE and PTF
It is intended to provide a method for producing a photoresist composition having a reduced amount of fine particles, characterized by passing through a filter comprising a composite film made of E.
【0005】[0005]
【発明の実施の形態】本発明に使用されるフォトレジス
ト組成物は、一般に、感光性または非感光性のバインダ
ー樹脂が有機溶剤に溶解されたものであり、バインダー
樹脂が非感光性の場合には、他の感光性の化合物も含有
することになり、もちろん、その他に必要な添加物を含
有することもある。例えば、ノボラック樹脂をバインダ
ーとし、o−キノンジアジド化合物を感光剤とするg線
またはi線用ポジ型フォトレジスト組成物組成物、ノボ
ラック樹脂をバインダーとし、アジド化合物を感光剤と
するg線またはi線用ネガ型フォトレジスト組成物、酸
の作用により解裂する基を有するビニルフェノール系ま
たは(メタ)アクリル系の樹脂をバインダーとし、露光
により酸を発生する酸発生剤を感光性化合物とするエキ
シマレーザー用ポジ型フォトレジスト組成物、ノボラッ
ク系、ポリビニルフェノール系または(メタ)アクリル
系のアルカリ可溶性樹脂をバインダーとし酸発生剤を感
光性化合物とし、さらに架橋剤を含有するネガ型フォト
レジスト組成物、ノボラック樹脂やアルキル置換ポリス
ルホンなどを感光性のバインダーとする電子線用フォト
レジスト組成物などがあり、これらいずれのフォトレジ
スト組成物に対しても、本発明の方法を適用しうる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The photoresist composition used in the present invention generally comprises a photosensitive or non-photosensitive binder resin dissolved in an organic solvent. Will also contain other photosensitive compounds and, of course, may contain other necessary additives. For example, a positive photoresist composition composition for g-line or i-line using a novolak resin as a binder and an o-quinonediazide compound as a photosensitizer, a g-line or i-line using a novolak resin as a binder and an azide compound as a photosensitizer Excimer laser with negative photoresist composition for use, vinylphenol or (meth) acrylic resin having a group that can be cleaved by the action of an acid as a binder, and an acid generator that generates an acid upon exposure as a photosensitive compound Positive photoresist composition, novolak-based, polyvinylphenol-based or (meth) acrylic-based alkali-soluble resin as binder, acid generator as photosensitive compound, and negative photoresist composition further containing a crosslinking agent, novolak Use a resin or alkyl-substituted polysulfone as the photosensitive binder. Include electron beam photoresist composition, with respect to any of these photoresist compositions may be applied to the method of the present invention.
【0006】本発明は、上記の様なフォトレジスト組成
物を、PE及びPTFEからなる複合膜で構成されてい
るフィルターに通過させることを特徴とするものであ
る。ここで、PE及びPTFEからなる複合膜として
は、例えば、PE製の膜とPTFE製の膜が積層された
複合膜などが挙げられる。PE製の膜、PTFE製の膜
が複数枚積層された複合膜であることもできる。PE製
の膜、PTFE製の膜の孔径は、それぞれ0.01〜10μm
程度の範囲であることが好ましい。なかでも、PTFE
製の膜/PTFE製の膜/PE製の膜の順に積層された
複合膜が好ましい。この場合のそれぞれの孔径は、通
常、0.45〜10μm/0.05〜0.45μm/0.1〜1μm程
度である。The present invention is characterized in that the above-mentioned photoresist composition is passed through a filter composed of a composite film composed of PE and PTFE. Here, examples of the composite film made of PE and PTFE include a composite film in which a PE film and a PTFE film are laminated. It may be a composite membrane in which a plurality of PE membranes and PTFE membranes are laminated. The pore diameter of the PE membrane and the PTFE membrane is 0.01 to 10 μm, respectively.
It is preferable that it is in the range of about. Above all, PTFE
A composite membrane laminated in the order of a membrane made of PTFE / a membrane made of PTFE / a membrane made of PE is preferable. In this case, each pore diameter is usually about 0.45 to 10 μm / 0.05 to 0.45 μm / 0.1 to 1 μm.
【0007】上記のようなPE及びPTFEからなる複
合膜で構成されているフィルターを用いることにより、
フィルターの目詰まりを抑制できるのみならず、PE製
フィルターのみを用いた場合の保存により微細粒子が増
大するという現象も防止し得る。またフォトレジスト組
成物をPE及びPTFEからなる複合膜で構成されてい
るフィルターに通過させた後、さらに別のフィルターに
通過させることもできる。この場合、後者のフィルター
として、前者の孔径より実質的に小さい孔径のものを選
定すれば、一層微細な粒子を効率良く除去し得る。後者
のフィルターとしては、例えば孔径が0.01μm〜
0.2μm程度のポリエチレン製のフィルターが挙げら
れる。[0007] By using a filter composed of a composite membrane comprising PE and PTFE as described above,
Not only can clogging of the filter be suppressed, but also the phenomenon that fine particles increase due to storage when only a PE filter is used can be prevented. Further, the photoresist composition may be passed through a filter composed of a composite film composed of PE and PTFE, and then passed through another filter. In this case, if a filter having a pore size substantially smaller than the former is selected as the latter filter, finer particles can be efficiently removed. As the latter filter, for example, the pore size is 0.01 μm or more.
A polyethylene filter of about 0.2 μm is exemplified.
【0008】[0008]
【実施例】以下、実施例を示して本発明をさらに詳しく
説明するが、本発明はこれらの実施例によって何ら限定
されるものではない。EXAMPLES Hereinafter, the present invention will be described in more detail by way of examples, but the present invention is not limited to these examples.
【0009】実施例1 ノボラック樹脂、感光材、溶剤等からなるスミレジスト
PFI−38A9(ポジ型フォトレジスト組成物、以下
レジストAと略称する)を、PTFE製の膜/PTFE
製の膜/PE製の膜の順に積層された複合膜で構成され
たフィルター(孔径:5μm/0.2μm/0.5μm、AB
D1UFGD3E;日本ポール(株)製)に通過させ
た。操作は、50kPaの窒素加圧下で実施した。この
時の、単位面積(cm2)、単位時間(分)当たりの濾過
量(ml)を測定しこれを線速度と、初期線速度が半減し
た点(ml)を目詰まり点と、線速度が0.30ml/分・cm2
に低下するまでの濾過量(ml)を処理量として、表1に
示した。Example 1 A smectifist PFI-38A9 (positive photoresist composition, hereinafter abbreviated as "resist A") comprising a novolak resin, a photosensitive material, a solvent, and the like was used as a PTFE film / PTFE.
Composed of a composite membrane laminated in the order of a membrane made of PE / a membrane made of PE (pore size: 5 μm / 0.2 μm / 0.5 μm, AB
D1UFGD3E (manufactured by Pall Corporation). The operation was performed under a nitrogen pressure of 50 kPa. At this time, the amount of filtration (ml) per unit area (cm 2 ) and unit time (minute) was measured, and this was measured. The linear velocity, the point at which the initial linear velocity was reduced by half (ml), the clogging point, and the linear velocity Is 0.30 ml / min.cm 2
Table 1 shows the amount of filtration (ml) until the amount decreased to the treatment amount.
【0010】比較例1 実施例1において、複合膜で構成されたフィルターの代
わりに、PE膜で構成されたフィルター(孔径0.2μ
m、CW UG01PLT;日本ミリポア(株)製)に
用いた以外は、実施例1に準拠して実施した。結果を表
1に示した。Comparative Example 1 In Example 1, a filter composed of a PE membrane (pore size 0.2 μm) was used instead of the filter composed of the composite membrane.
m, CW UG01PLT; manufactured by Nippon Millipore Co., Ltd.). The results are shown in Table 1.
【0011】比較例2 実施例1において、複合膜で構成されたフィルターに通
過させる代わりに、PTFE膜で構成されたフィルター
(孔径0.05μ m、ABD1UFD3EJ;日本ポ
ール(株)製)に通過させ、次いでPE膜で構成された
フィルター(孔径0.2μm、CW UG01PLT;
日本ミリポア(株)製)に通過させる以外は、1に準拠
して実施した。結果を表1に示した。Comparative Example 2 In Example 1, instead of passing through a filter composed of a composite membrane, passing through a filter composed of a PTFE membrane (pore diameter: 0.05 μm, ABD1UFD3EJ; manufactured by Pall Corporation). And a filter composed of a PE membrane (pore size 0.2 μm, CW UG01PLT;
Except for passing through Nippon Millipore Co., Ltd.). The results are shown in Table 1.
【0012】[0012]
【表1】 例 フィルター 初期線速度 目詰まり点 処理量 ml/分・cm 2 比 ml 比 ml 比 比較例1 PE 1.396 1.00 205 1.00 330 1.00 比較例2 PTFE+PE 1.228 0.88 215 1.05 320 0.97 実施例1 PTFE/PTFE/PE 1.433 1.03 247 1.2 410 1.24[Table 1] Example Filter initial linear velocity Clogging point treatment amount ml / min · cm 2 ratio ml ratio ml ratio Comparative Example 1 PE 1.396 1.00 205 1.00 330 1.00 Comparative Example 2 PTFE + PE 1.228 0.88 215 1.05 320 0.97 Example 1 PTFE / PTFE / PE 1.433 1.03 247 1.2 410 1.24
【0013】実施例2 ノボラック樹脂、感光材、溶剤等からなるスミレジスト
PFI−58A7(ポジ型フォトレジスト組成物、以下
レジストBと略称する)を、PTFE製の膜/PTFE
製の膜/PE製の膜の順に積層された複合膜で構成され
たフィルター(孔径:5μm/0.2μm/0.5μm、AB
D1UFGD3E;日本ポール(株)製)10インチ4本
(並列)に、50kPaの窒素加圧下に通過させた後、P
E製の膜で構成されたフィルター(孔径0.1μm、S
H4M229J3;日本ミリポア(株)製)20インチ
4本(並列)に、2.8〜3.2kPaのポンプ加圧下に
通過させた。濾過による目詰まりは発生しなかった。ま
たこのようにして得られたレジスト製品は、品質規格全
項目を満足し、長期保存における微細粒子数の増加も殆
どなく安定な製品が得られた。Example 2 Sumiresist PFI-58A7 (a positive photoresist composition, hereinafter abbreviated as "resist B") comprising a novolak resin, a photosensitive material, a solvent and the like was used as a PTFE film / PTFE.
Composed of a composite membrane laminated in the order of a membrane made of PE / a membrane made of PE (pore size: 5 μm / 0.2 μm / 0.5 μm, AB
D1UFGD3E (manufactured by Nippon Pall Co., Ltd.) after passing through four 10-inch (parallel) under nitrogen pressure of 50 kPa,
Filter composed of E membrane (pore size 0.1 μm, S
H4M229J3 (manufactured by Nippon Millipore Co., Ltd.) was passed through four 20-inch tubes (parallel) under a pump pressure of 2.8 to 3.2 kPa. No clogging due to filtration occurred. The resist product obtained in this way satisfied all the items of the quality standards, and a stable product was obtained with almost no increase in the number of fine particles during long-term storage.
【0014】[0014]
【発明の効果】本発明によれば、フィルターとして、P
E及びPTFEからなる複合膜で構成されるという特定
のフィルター用いてフォトレジスト組成物を濾過するこ
とにより、フィルターの目詰まりを抑制し得、濾過時間
を著しく短縮できるので、微細粒子の低減されたフォト
レジスト組成物を効率良く製造し得る。加えて、本発明
により得られたフォトレジスト組成物は、長期保存によ
る微細粒子数の増加も抑制し得るので、この点でも本発
明は有利である。According to the present invention, as a filter, P
By filtering the photoresist composition using a specific filter composed of a composite film composed of E and PTFE, clogging of the filter can be suppressed and the filtration time can be significantly shortened, so that fine particles are reduced. A photoresist composition can be efficiently produced. In addition, the photoresist composition obtained according to the present invention can suppress the increase in the number of fine particles due to long-term storage, and the present invention is also advantageous in this regard.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 21/027 H01L 21/30 502R (72)発明者 花元 幸夫 大阪市此花区春日出中3丁目1番98号 住 友化学工業株式会社内 Fターム(参考) 2H096 AA25 CA14 CA20 4D006 GA02 KA12 KA41 KA52 KA55 KA57 MA08 MA22 MC22 MC30 PA02 PB70 PC80 ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 21/027 H01L 21/30 502R (72) Inventor Yukio Hanamoto 3-chome Kasuganaka, Konohana-ku, Osaka-shi No. 98 Sumitomo Chemical Co., Ltd. F-term (reference) 2H096 AA25 CA14 CA20 4D006 GA02 KA12 KA41 KA52 KA55 KA57 MA08 MA22 MC22 MC30 PA02 PB70 PC80
Claims (4)
膜及びポリテトラフルオロエチレン製の膜からなる複合
膜で構成されているフィルターに通過させることを特徴
とする微細粒子量の低減されたフォトレジスト組成物の
製法。1. A photoresist composition having a reduced amount of fine particles, wherein the photoresist composition is passed through a filter comprising a composite film comprising a polyethylene film and a polytetrafluoroethylene film. The manufacturing method of things.
させた後、さらにポリエチレン製のフィルターを通過さ
せることを特徴とする請求項1の製法。2. The method according to claim 1, further comprising, after passing through a filter comprising a composite membrane, further passing through a filter made of polyethylene.
が0.01μm〜10μmであり、ポリエチレン製のフ
ィルターの孔径が0.01μm〜0.2μmである請求
項1又は2の製法。3. The method according to claim 1, wherein the pore size of the filter formed of the composite membrane is 0.01 μm to 10 μm, and the pore size of the polyethylene filter is 0.01 μm to 0.2 μm.
膜及びポリテトラフルオロエチレン製の膜からなる複合
膜で構成されているフィルターに通過させることを特徴
とするフィルターの目詰まりを抑制する方法。4. A method for suppressing clogging of a filter, comprising passing the photoresist composition through a filter comprising a composite film comprising a polyethylene film and a polytetrafluoroethylene film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000288257A JP4006936B2 (en) | 2000-09-22 | 2000-09-22 | Method for producing photoresist composition with reduced amount of fine particles |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000288257A JP4006936B2 (en) | 2000-09-22 | 2000-09-22 | Method for producing photoresist composition with reduced amount of fine particles |
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Publication Number | Publication Date |
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JP2002099098A true JP2002099098A (en) | 2002-04-05 |
JP4006936B2 JP4006936B2 (en) | 2007-11-14 |
Family
ID=18771875
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JP2000288257A Expired - Fee Related JP4006936B2 (en) | 2000-09-22 | 2000-09-22 | Method for producing photoresist composition with reduced amount of fine particles |
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