JP2002075920A - Machining method of semiconductor wafer - Google Patents
Machining method of semiconductor waferInfo
- Publication number
- JP2002075920A JP2002075920A JP2000261035A JP2000261035A JP2002075920A JP 2002075920 A JP2002075920 A JP 2002075920A JP 2000261035 A JP2000261035 A JP 2000261035A JP 2000261035 A JP2000261035 A JP 2000261035A JP 2002075920 A JP2002075920 A JP 2002075920A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- dicing
- adhesive sheet
- processing
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体ウエハに薄
型加工処理およびダイシング処理を施す方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for performing thin processing and dicing on a semiconductor wafer.
【０００２】[0002]
【従来の技術】半導体ウエハのダイシング方法として
は、たとえば、ダイシング用粘着テープ上面に配線パタ
ーンが形成された半導体ウエハの表面を上にして、リン
グフレームと貼付けてウエハマウントフレームを作製
し、その後、ダイシング装置のチャックテーブルに保持
し、ダイシング装置の回転ブレード等により半導体ウエ
ハのカットラインに沿ってダイシングを行う方法が採用
されている。2. Description of the Related Art As a dicing method for a semiconductor wafer, for example, a semiconductor wafer having a wiring pattern formed on an upper surface of an adhesive tape for dicing is attached to a ring frame, and a wafer mounting frame is formed. A method is employed in which the semiconductor wafer is held on a chuck table of a dicing apparatus and is diced along a cut line of a semiconductor wafer by a rotating blade or the like of the dicing apparatus.
【０００３】このダイシング方法には、ダイシングの深
さが半導体ウエハの厚みより大であってダイシング用粘
着テープまで切り込む、いわゆるフルカット法と称され
る方法と、ダイシングの深さが半導体ウエハの厚みより
もわずがに小さい、セミフルカット法と称される方法が
ある。フルカット法の場合は、ダイシングが終わった時
点で半導体ウエハは個々の半導体素子（チップ）に分割
されるため、その支持のためにダイシング用粘着テープ
が必要とされる。また、セミフルカット法においても、
ダイシング後の半導体ウエハは極めて割れやすいので、
ダイシング用粘着テープでの支持が必要となっている。
そして、そのダイシング用粘着テープの保持のために、
リングフレームが使われている。[0003] This dicing method includes a so-called full-cut method in which the dicing depth is larger than the thickness of the semiconductor wafer and cutting is performed to the adhesive tape for dicing. There is a method called a semi-full cut method, which is slightly smaller than that. In the case of the full cut method, the semiconductor wafer is divided into individual semiconductor elements (chips) at the time of completion of dicing, and therefore, an adhesive tape for dicing is required for supporting the semiconductor wafer. Also, in the semi-full cut method,
Since the semiconductor wafer after dicing is extremely fragile,
Support with an adhesive tape for dicing is required.
And for holding the dicing adhesive tape,
A ring frame is used.
【０００４】しかし、半導体ウエハの大口径化が進むに
伴い、大口径化半導体ウエハに対して上記のダイシング
方法を実施しようとすれば、リングフレームは大きくな
り、さらには重量化を伴う。そのため、それを処理する
マウントフレーム作製装置やダイシング装置およびボン
ディング装置の大型化を招く結果、人手による取り扱い
や運搬が困難になる。この問題は、今後の半導体ウエハ
の更なる大口径化により、一層深刻な問題となる。[0004] However, as the diameter of the semiconductor wafer increases, if the above dicing method is applied to the semiconductor wafer having a large diameter, the ring frame becomes large and the weight increases. For this reason, the mount frame manufacturing apparatus, the dicing apparatus, and the bonding apparatus for processing the same are increased in size, which makes it difficult to handle and transport by hand. This problem will become more serious as the diameter of semiconductor wafers becomes larger in the future.
【０００５】また、上記のダイシング方法では、半導体
ウエハ表面に回転ブレードを入れるため、半導体ウエハ
表面に切削屑（コンタミ）が付着してボンディングパッ
ド等が汚染するという問題もある。Further, in the above dicing method, since a rotary blade is put on the surface of the semiconductor wafer, there is also a problem that cutting chips (contamination) adhere to the surface of the semiconductor wafer and contaminate bonding pads and the like.
【０００６】[0006]
【発明が解決しようとする課題】本発明は、このような
事情に鑑みてなされたものであって、半導体ウエハのダ
イシングを、ダイシング用粘着テープおよびそれを保持
するためのリングフレームを用いることなく行いうる半
導体ウエハの加工方法を提供することを目的とするもの
である。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and is intended to dice a semiconductor wafer without using a dicing adhesive tape and a ring frame for holding the dicing adhesive tape. It is an object of the present invention to provide a method of processing a semiconductor wafer that can be performed.
【０００７】[0007]
【課題を解決するための手段】本発明者らは前記課題を
解決すべく鋭意検討を重ねた結果、以下に示す方法によ
り前記目的を達成することができることを見出し、本発
明を完成するに到った。The present inventors have made intensive studies to solve the above-mentioned problems, and as a result, have found that the above-mentioned object can be achieved by the following method, and completed the present invention. Was.
【０００８】すなわち、本発明は、パターンが形成され
た半導体ウエハ表面に、粘着シートを貼付ける工程、前
記粘着シートを貼付けた状態の半導体ウエハの裏面に薄
型加工を施す工程、次いで前記粘着シートを貼付けた状
態の半導体ウエハにダイシングを行う工程とを含むこと
を特徴とする半導体ウエハの加工方法、に関する。That is, the present invention provides a step of attaching an adhesive sheet to a surface of a semiconductor wafer on which a pattern is formed, a step of performing thin processing on a back surface of the semiconductor wafer on which the adhesive sheet is attached, and then attaching the adhesive sheet. And a step of dicing the bonded semiconductor wafer.
【０００９】上記方法によれば、半導体ウエハに薄型加
工を施す際に用いた粘着シートがダイシング用粘着テー
プの代わりとなり、当該粘着テープを半導体ウエハ表面
に貼付けた状態でダイシング処理を行うことで、ウエハ
マウントフレームを作製する必要がない。さらには、別
途ダイシング用粘着テープを用意する必要がなく、リン
グフレームも不要になる。According to the above method, the pressure-sensitive adhesive sheet used when thinning the semiconductor wafer is used in place of the pressure-sensitive adhesive tape for dicing, and the pressure-sensitive adhesive tape is bonded to the surface of the semiconductor wafer to perform the dicing process. There is no need to make a wafer mount frame. Furthermore, there is no need to prepare a separate dicing adhesive tape, and a ring frame is not required.
【００１０】前記半導体ウエハの加工方法において、粘
着シートとしては、その粘着面が、ダイシング工程後に
前記半導体ウエハ表面との接着力を低下させることがで
きるものであることが好ましい。In the semiconductor wafer processing method, it is preferable that the pressure-sensitive adhesive sheet has a pressure-sensitive adhesive surface capable of reducing an adhesive force with the semiconductor wafer surface after a dicing step.
【００１１】前記特性の粘着面を有する粘着シートを用
いれば、半導体ウエハのダイシング工程後に半導体チッ
プをボンディングする際、粘着シートから半導体チップ
を容易にボンディングすることができる。When a pressure-sensitive adhesive sheet having a pressure-sensitive adhesive surface having the above characteristics is used, the semiconductor chips can be easily bonded from the pressure-sensitive adhesive sheet when the semiconductor chips are bonded after the semiconductor wafer dicing step.
【００１２】前記半導体ウエハの加工方法において、粘
着シートとしては、その粘着面が、熱剥離型の粘着面で
あることが好ましい。In the method for processing a semiconductor wafer, the adhesive surface of the adhesive sheet is preferably a heat-peelable adhesive surface.
【００１３】熱剥離型の粘着面を有する熱剥離型粘着シ
ートは、半導体ウエハのダイシング工程後に半導体チッ
プをボンディングする際、半導体チップを簡単確実にボ
ンディングすることができる。A heat-peelable pressure-sensitive adhesive sheet having a heat-peelable pressure-sensitive adhesive surface can easily and reliably bond a semiconductor chip when bonding a semiconductor chip after a semiconductor wafer dicing step.
【００１４】また、半導体ウエハの加工方法において、
半導体ウエハの裏面を上にして、半導体ウエハの裏面側
からダイシングを行うことが好ましい。In a method for processing a semiconductor wafer,
It is preferable to perform dicing from the back side of the semiconductor wafer with the back side of the semiconductor wafer facing up.
【００１５】半導体ウエハの薄型加工を施した後、半導
体ウエハ表面に前記粘着シートを貼付けた状態で半導体
ウエハの裏面を上にしてダイシング装置のチャックテー
ブルに保持し、半導体ウエハの裏面側からダイシングを
行うことにより、半導体ウエハ表面に切削屑を付着させ
ることなくダイシングを行うことができる。After the semiconductor wafer has been thinned, the semiconductor wafer is held on a chuck table of a dicing apparatus with the back side of the semiconductor wafer facing upward with the adhesive sheet adhered to the front surface of the semiconductor wafer, and dicing is performed from the back side of the semiconductor wafer. By doing so, dicing can be performed without causing cutting chips to adhere to the semiconductor wafer surface.
【００１６】さらに、本発明は、前記半導体ウエハの加
工方法に用いられる、半導体ウエハの加工用粘着シー
ト、に関する。上記本発明の半導体ウエハの加工方法に
は、前記粘着シートが有効に用いられる。Further, the present invention relates to a pressure-sensitive adhesive sheet for processing a semiconductor wafer, which is used in the method for processing a semiconductor wafer. In the method for processing a semiconductor wafer according to the present invention, the pressure-sensitive adhesive sheet is effectively used.
【００１７】[0017]
【発明の実施の形態】以下、本発明の半導体ウエハの薄
型加工処理およびダイシング処理について、その好まし
い実施形態について、図１を参酌しながら説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the thinning processing and dicing processing of a semiconductor wafer according to the present invention will be described below with reference to FIG.
【００１８】図１（Ａ）の半導体ウエハ１はその表面１
ａに配線パターンが形成されたものであり、その反対面
に裏面１ｂを有する。表面１ａに形成される配線パター
ンは、常法に従って、所望のパターンが形成されてい
る。The semiconductor wafer 1 shown in FIG.
a has a wiring pattern formed thereon, and has a back surface 1b on the opposite surface. A desired pattern is formed on the wiring pattern formed on the front surface 1a according to a conventional method.
【００１９】上記半導体ウエハ１の表面１ａには、図１
（Ｂ）のように、まず粘着シート２が貼付けられる。粘
着シート２は、基材２ａおよび粘着層２ｂを有してい
る。かかる粘着シート２は、たとえば、半導体ウエハ１
と同じ形状に打ち抜かれたラベル状のものを離型支持シ
ートに支持されたものから剥がし、半導体ウエハ１と位
置合わせを行って貼り付けられる。当該粘着シートの貼
付け工程では、半導体ウエハ１はチャックテーブル上に
固定されている。On the surface 1a of the semiconductor wafer 1, FIG.
As shown in (B), first, the adhesive sheet 2 is attached. The adhesive sheet 2 has a substrate 2a and an adhesive layer 2b. Such an adhesive sheet 2 is, for example, a semiconductor wafer 1
The label-shaped material punched out in the same shape as that of the semiconductor wafer 1 is peeled off from the one supported by the release support sheet, aligned with the semiconductor wafer 1, and attached. In the step of attaching the adhesive sheet, the semiconductor wafer 1 is fixed on the chuck table.
【００２０】なお、貼付け工程で用いる粘着シートは、
半導体ウエハと同じ形状に打ち抜かれたラベル状である
必要はなく、シート状でもよい。その場合、粘着シート
は半導体ウエハに貼付けた後に半導体ウエハの形状にカ
ットする。The adhesive sheet used in the attaching step is
It is not necessary that the label be stamped into the same shape as the semiconductor wafer, but may be a sheet. In that case, the adhesive sheet is cut into the shape of a semiconductor wafer after being attached to the semiconductor wafer.
【００２１】粘着シート２としては、従来より粘着シー
トの基材として使用されているものを特に制限なく使用
することができる。たとえば、基材２ａとしては たと
えば、ポリエチレンテレフタレート、ポリエチレン、ポ
リスチレン、ポリプロピレン、ナイロン、ウレタン、ポ
リ塩化ビニリデン、ポリ塩化ビニルなどの一軸または二
軸延伸フィルム等があげられる。基材２ａの厚さは、通
常３０〜２００μｍ程度である。As the pressure-sensitive adhesive sheet 2, those conventionally used as a base material of the pressure-sensitive adhesive sheet can be used without any particular limitation. For example, examples of the substrate 2a include uniaxially or biaxially stretched films such as polyethylene terephthalate, polyethylene, polystyrene, polypropylene, nylon, urethane, polyvinylidene chloride, and polyvinyl chloride. The thickness of the substrate 2a is usually about 30 to 200 μm.
【００２２】粘着層２ｂを形成する粘着剤としては、ア
クリル系、ゴム系、シリコーン系、ポリビニルエーテル
等の各種粘着剤があげられ、これらはエネルギー線硬化
型であってもよく、発泡型であってもよい。前述の通
り、半導体ウエハ表面１ａに貼り付ける粘着層２ｂに
は、薄型加工処理後に半導体ウエハ表面１ａとの接着力
を低下させることができる粘着剤、特に熱剥離型粘着剤
を用いるのが剥離が容易で好ましい。粘着層２ｂの厚さ
は、通常２０〜１００μｍ程度である。また、熱剥離型
粘着シートとしては、たとえば、日東電工 (株）製のリ
バアルファ（商品名）を例示できる。Examples of the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 2b include various pressure-sensitive adhesives such as acrylic, rubber, silicone, and polyvinyl ether. These may be energy ray-curable or foamed. You may. As described above, the pressure-sensitive adhesive that can reduce the adhesive force with the semiconductor wafer surface 1a after the thinning processing is used for the pressure-sensitive adhesive layer 2b that is adhered to the semiconductor wafer surface 1a, and in particular, a heat-peelable pressure-sensitive adhesive is used. Easy and preferred. The thickness of the adhesive layer 2b is usually about 20 to 100 μm. Further, as the heat-peelable pressure-sensitive adhesive sheet, for example, Riba Alpha (trade name) manufactured by Nitto Denko Corporation can be exemplified.
【００２３】なお、上記、図１（Ｂ）における粘着シー
ト２と半導体ウエハ１との位置合わせ、画像認識装置に
より行い、正確な位置を認識して現在の位置関係との差
異分を補正することで行うことができる。The positioning of the adhesive sheet 2 and the semiconductor wafer 1 in FIG. 1B is performed by an image recognition device to recognize an accurate position and correct a difference from the current positional relationship. Can be done with
【００２４】次いで、図１（Ｃ）に示すように、半導体
ウエハ１の位置を上下反転し、粘着テープをチャクテー
ブル３上に固定して半導体ウエハ裏面１ｂの薄型加工を
行う。薄型加工は、常法を採用できる。薄型加工機４と
しては、研削機（バックグラインド）、ＣＭＰパッド等
があげられる。薄型加工は、半導体ウエハ１が所望の厚
さになるまで行われる。Next, as shown in FIG. 1C, the position of the semiconductor wafer 1 is turned upside down, an adhesive tape is fixed on the chuck table 3, and the thinning of the back surface 1b of the semiconductor wafer is performed. For the thin processing, an ordinary method can be adopted. Examples of the thin processing machine 4 include a grinding machine (back grinding), a CMP pad, and the like. The thin processing is performed until the semiconductor wafer 1 has a desired thickness.
【００２５】薄型加工処理が完了した後、図１（Ｄ）の
ように半導体ウエハ表面１ａに貼付けられた粘着テープ
２を支持体にしてダイシング工程に移送し、ダイシング
装置のチャックテーブル３で半導体ウエハ裏面１ｂを上
にして保持する。このダイシング工程では、パターンが
形成された半導体ウエハ表面１ａが下になるため、その
ストリートを認識してダイシングを行う。ストリートを
認識する方法は特に制限されない。ストリート認識手段
としては、たとえば、半導体ウエハ裏面１ｂから赤外光
を照射してアライメントする方法等を採用することがで
きる。そして、半導体ウエハ裏面１ｂから回転ブレード
等によりダイシングすることにより半導体ウエハをチッ
プ１′に分割する。After the completion of the thinning process, as shown in FIG. 1D, the semiconductor wafer is transferred to a dicing process using the adhesive tape 2 affixed to the semiconductor wafer surface 1a as a support, and the semiconductor wafer is placed on the chuck table 3 of the dicing apparatus. The back side 1b is held up. In this dicing step, since the surface 1a of the semiconductor wafer on which the pattern is formed faces down, the street is recognized and dicing is performed. The method for recognizing the street is not particularly limited. As the street recognizing means, for example, a method of irradiating infrared light from the back surface 1b of the semiconductor wafer to perform alignment or the like can be adopted. Then, the semiconductor wafer is divided into chips 1 'by dicing from the back surface 1b of the semiconductor wafer with a rotating blade or the like.
【００２６】ダイシングが完了した後、図１（Ｆ）のよ
うにウエハ表面１ａに貼付けられた粘着テープ２を支持
体にしてボンディング工程に移送する。ボンディング工
程により、ボンディングパッド５による半導体チップ
１′のピックアップおよびダイボンドを行う。After the dicing is completed, as shown in FIG. 1 (F), the wafer is transferred to a bonding step using the adhesive tape 2 attached to the wafer surface 1a as a support. In the bonding step, the semiconductor chip 1 ′ is picked up by the bonding pads 5 and die-bonded.
【００２７】ボンディング工程において、粘着シート２
が熱剥離型粘着シートであれば、半導体ウエハ表面１ａ
に貼付けられた粘着テープ２を任意の温度まで加熱し、
図１（Ｅ）のように半導体ウエハチップ１′と粘着層２
ｂとの粘着力を低下させることにより、容易に半導体チ
ップのピックアップを行うことができる。たとえば、日
東電工 (株）製のリバアルファ（商品名）のＮｏ．３１
９８ＨＳ（品番）を用いた場合には１５０℃に加熱する
ことにより粘着力が低下して、ピックアップが容易にな
る。In the bonding step, the adhesive sheet 2
Is a heat-peelable pressure-sensitive adhesive sheet, the semiconductor wafer surface 1a
Heat the adhesive tape 2 affixed to the desired temperature,
As shown in FIG. 1E, the semiconductor wafer chip 1 'and the adhesive layer 2
The semiconductor chip can be easily picked up by reducing the adhesive strength with b. For example, Nitto Denko's Riva Alpha (trade name) No. 31
When 98HS (product number) is used, the adhesive strength is reduced by heating to 150 ° C., which facilitates pickup.
【００２８】[0028]
【発明の効果】本発明の半導体ウエハの加工方法による
と次のような効果が得られる。薄型加工時の半導体ウエ
ハ表面の保護テープをダイシング工程でも用いることに
より、ウエハマウントフレームを作製する必要がなく、
さらにダイシング用粘着テープおよびリングフレームが
不要となり、大口径ウエハの加工に適した半導体製造方
法が実現できる。また、リングフレームにダイシング用
粘着テープを貼付けしてウエハマウントフレームを作製
したり、剥離したりする工程が不要となり、工程全体の
短縮化とコストダウンを図ることができる。According to the semiconductor wafer processing method of the present invention, the following effects can be obtained. By using the protective tape on the surface of the semiconductor wafer during thinning in the dicing process, there is no need to manufacture a wafer mount frame,
Further, a dicing adhesive tape and a ring frame are not required, and a semiconductor manufacturing method suitable for processing a large-diameter wafer can be realized. Further, a step of producing a wafer mount frame by attaching an adhesive tape for dicing to a ring frame or peeling the wafer mount frame is not required, so that the entire process can be shortened and the cost can be reduced.
【００２９】さらに、半導体ウエハ裏面からダイシング
することにより、半導体ウエハ表面に切削屑が付着する
ことを防止でき、ボンディングパッド等にコンタミが付
着することがなくなるため、品質が向上し、結果として
歩留まりが向上する。Furthermore, by dicing from the back surface of the semiconductor wafer, it is possible to prevent cutting chips from adhering to the surface of the semiconductor wafer, and to prevent contamination from adhering to bonding pads and the like, thereby improving the quality and consequently reducing the yield. improves.
【図１】本発明の半導体ウエハの薄型加工工程およびダ
イシング工程を説明するための工程図である。FIG. 1 is a process diagram for explaining a thinning process and a dicing process of a semiconductor wafer of the present invention.
１ 半導体ウエハ ２ 粘着シート 1 semiconductor wafer 2 adhesive sheet
Claims (5)
に、粘着シートを貼付ける工程、前記粘着シートを貼付
けた状態の半導体ウエハの裏面に薄型加工を施す工程、
次いで前記粘着シートを貼付けた状態の半導体ウエハに
ダイシングを行う工程とを含むことを特徴とする半導体
ウエハの加工方法。1. A step of attaching an adhesive sheet to a surface of a semiconductor wafer on which a pattern is formed, a step of performing thin processing on a back surface of the semiconductor wafer to which the adhesive sheet is attached,
And then dicing the semiconductor wafer to which the pressure-sensitive adhesive sheet has been adhered.
後に前記半導体ウエハ表面との接着力を低下させること
ができるものであることを特徴とする請求項１記載の半
導体ウエハの加工方法。2. The method for processing a semiconductor wafer according to claim 1, wherein the adhesive surface of the adhesive sheet can reduce an adhesive force with the surface of the semiconductor wafer after a dicing step.
面であることを特徴とする請求項１または２記載の半導
体ウエハの加工方法。3. The method for processing a semiconductor wafer according to claim 1, wherein the adhesive surface of the adhesive sheet is a heat-peelable adhesive surface.
ウエハの裏面側からダイシングを行うことを特徴とする
請求項１〜３のいずれかに記載の半導体ウエハの加工方
法。4. The semiconductor wafer processing method according to claim 1, wherein dicing is performed from the back side of the semiconductor wafer with the back side of the semiconductor wafer facing upward.
ウエハの加工方法に用いられる、半導体ウエハの加工用
粘着シート。5. An adhesive sheet for processing a semiconductor wafer, which is used in the method for processing a semiconductor wafer according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000261035A JP2002075920A (en) | 2000-08-30 | 2000-08-30 | Machining method of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000261035A JP2002075920A (en) | 2000-08-30 | 2000-08-30 | Machining method of semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002075920A true JP2002075920A (en) | 2002-03-15 |
Family
ID=18748952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000261035A Pending JP2002075920A (en) | 2000-08-30 | 2000-08-30 | Machining method of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002075920A (en) |
Cited By (4)
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|---|---|---|---|---|
| JP2005223242A (en) * | 2004-02-09 | 2005-08-18 | Toppan Printing Co Ltd | Solid-state imaging device and method of manufacturing same |
| JP2005244118A (en) * | 2004-02-27 | 2005-09-08 | Toshiba Corp | Manufacturing method for semiconductor device and camera module |
| JP2005302982A (en) * | 2004-04-12 | 2005-10-27 | Nitto Denko Corp | Process for producing semiconductor chip |
| US7037758B2 (en) | 2002-08-22 | 2006-05-02 | Seiko Epson Corporation | Semiconductor device, method of manufacturing the same, circuit board and electronic apparatus |
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| US7037758B2 (en) | 2002-08-22 | 2006-05-02 | Seiko Epson Corporation | Semiconductor device, method of manufacturing the same, circuit board and electronic apparatus |
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| JP2005302982A (en) * | 2004-04-12 | 2005-10-27 | Nitto Denko Corp | Process for producing semiconductor chip |
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