JP2001339060A - Semiconductor light emitter - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high-performance semiconductor light emitter which can enhance the efficiency in light emission and reduce the manufacture cost, and besides whose overall structure can be downsized. SOLUTION: In a semiconductor light emitter, a plurality of light emitting elements 15 being constituted by laminating compound semiconductor layer 8 of one conductivity type and a compound semiconductor layer 9 of the opposite conductivity type sequentially, a plurality of output transistors 18 for controlling the power supply to these light emitting elements 15, a silicon semiconductor element 2 having an activated region consisting of silicon, source and drain electrodes 4 and 5, and a gate electrode 3 supply the above output transistor 18 with a drive signal, are juxtaposed. The output transistor 18 is made of a compound semiconductor layer 9 of the opposite conductivity type of the same quality as the light emitting element 15.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor light emitting device mounted on an optical printer head or the like and used as a light emitting device thereof.

[0002]

2. Description of the Related Art Hitherto, it has been known to constitute an optical printer head using a semiconductor light emitting device in which a plurality of light emitting elements and a silicon semiconductor element are arranged in parallel on a silicon substrate.

FIG. 3 is a perspective view of a conventional optical printer head disclosed in Japanese Patent Application Laid-Open No. 63-249669, and FIG. 4 is a sectional view of a conventional semiconductor light emitting device used in the optical printer head of FIG. 31 is a substrate, 32 is a bonding wire, 33 is a wiring pattern, 34 is an LED, 35 is a monolithic element, 36 is a conductive adhesive, 37 is an input connector, 38 is a silicon substrate, 39 is an element isolation layer, and 40 is a wiring section. , 41 are electrode pad portions, 42 is a diffusion resistor, and 43 is an insulating layer.

In this conventional example, a light emitting element and a driving silicon semiconductor element are used to reduce the number of connections to external circuits to facilitate manufacture, improve reliability, and reduce costs. Are monolithically integrated.

Therefore, in the conventional optical printer head, it is not necessary to separately provide a driving element other than the above-described semiconductor light emitting device, the number of external driving elements can be reduced to zero or extremely small, and the semiconductor light emitting apparatus can be used. The number of electrode pads and bonding wires for connecting the circuit pattern on the device and the circuit pattern on the mounting board can be greatly reduced, and the manufacturing cost is reduced.

The above-described conventional optical printer head is
Since there is no need to mount an external drive element, there is no need to secure a wide space for mounting these elements on the mounting board, and the optical printer head can be downsized.

[0007]

However, in the semiconductor light emitting device used in the above-mentioned conventional optical printer head, a plurality of output transistors used for controlling power supply to the light emitting element are formed of a silicon semiconductor element. In order to integrally form these output transistors on the upper surface of the silicon substrate, a relatively large area is required. For this reason, the entire area of the silicon substrate must be increased, and it has been difficult to further reduce the size of the semiconductor light emitting device.

In the conventional semiconductor light emitting device described above, the resistivity of the silicon substrate as the base is 0.0
Since the resistance is as high as 1 Ωcm to 0.02 Ωcm, the wiring resistance of the n ⁺ region or the diffusion resistance connecting the silicon semiconductor element and the light emitting element is extremely high. For this reason, the driving voltage for emitting and driving the light emitting elements is high, the power consumption is large, and it is difficult to equalize the wiring resistance between the light emitting elements, and there is a disadvantage that the light emission variation increases. I was

[0009] Incidentally, in reducing the wiring resistance of the n ⁺ region and the diffusion resistance, or by increasing the wire thickness, or it is conceivable to diffuse impurities to the deep silicon substrate, in which case, the n ⁺ region Alternatively, in the process of forming the diffusion resistance, the crystallinity of the silicon substrate is deteriorated due to roughening of the crystallinity of the silicon substrate. The disadvantage of inducing high is induced.

In order to reduce the wiring resistance of the n ⁺ region and the diffusion resistance, it is conceivable to increase the wiring width.
In this case, there is a disadvantage that the area of the semiconductor light emitting device becomes large and it is difficult to reduce the size of the circuit element.

In general, when a light emitting device is formed by selective epitaxial growth of a compound semiconductor such as gallium arsenide, a film forming speed of an epitaxial film of a compound semiconductor adjacent to an end of an opening region of an insulating mask such as silicon oxide is formed. Is higher than the normal film formation rate, and an abnormal growth region where the thickness of the compound semiconductor epitaxial film is increased in a region several tens of μm from the opening end is formed.

This abnormal growth region can be explained as follows. Even on the insulating mask, the organic metal or hydride which is a raw material of the compound semiconductor is decomposed by heat to form a reaction intermediate of the raw material. Since the reaction intermediate has a weaker bonding force with the insulating mask than the substrate crystal, crystal growth by epitaxial growth does not occur, and the reaction intermediate moves and diffuses on the mask surface, and on the substrate at the end of the opening region. Crystal grows.
As a result, an abnormal growth region of the compound semiconductor having a large thickness is formed at the end of the opening region.

The abnormal growth region has poor surface morphology and poor crystallinity, so that a device cannot be formed. In the abnormal growth region, device processing is also difficult because the film thickness distribution is large. Therefore, although the abnormal growth region of the compound semiconductor must be removed, there is a disadvantage that the semiconductor light emitting device is enlarged by the removed portion.

The present invention has been made in view of the above-mentioned drawbacks, and has as its object to improve the luminous efficiency and reduce the manufacturing cost, and to reduce the overall structure. An object of the present invention is to provide a high performance semiconductor light emitting device.

[0015]

According to the present invention, there is provided a semiconductor light emitting device comprising a plurality of light emitting elements formed by sequentially laminating a compound semiconductor layer of one conductivity type and a compound semiconductor layer of opposite conductivity type on an upper surface of a silicon substrate; A plurality of output transistors for controlling the supply of power to the light emitting element, and a silicon semiconductor element having an activation region made of silicon, a source / drain electrode, and a gate electrode and supplying a drive signal to the output transistor are arranged in parallel. In the semiconductor light emitting device provided, the output transistor is formed of a reverse conductivity type compound semiconductor layer of the same quality as the light emitting element.

Further, in the semiconductor light emitting device according to the present invention, the common electrode connected to one conductive type semiconductor layer of the light emitting element, the individual electrode connected to the opposite conductive type semiconductor layer of the light emitting element, and the silicon semiconductor element The present invention is characterized in that all connected wirings are formed of metal.

Further, in the semiconductor light emitting device of the present invention, a part of the common electrode is formed in a band shape in a region between the light emitting element and the output transistor and the silicon semiconductor element.
The common electrode is connected to one conductivity type semiconductor layer of the light emitting element via a region between adjacent output transistors.

Still further, in the semiconductor light emitting device according to the present invention, the silicon substrate has a rectangular shape, and all the external connection pads are provided along one long side of the silicon substrate, and a plurality of external connection pads are provided along the other long side. Are arranged, and an output transistor and a silicon semiconductor element are arranged in a region between them.

According to the semiconductor light emitting device of the present invention, the output transistor is formed of the opposite conductive type compound semiconductor layer of the same quality as the light emitting element, so that the area of the output transistor is reduced and the overall structure of the semiconductor light emitting device itself is improved. In addition, the overall structure of the optical printer head on which the semiconductor light emitting device is mounted can be reduced in size. In this case, since the light-emitting element and the output transistor are formed using the same compound semiconductor layer, the productivity of the semiconductor light-emitting device can be maintained high by forming both of them at the same time by a conventionally known semiconductor manufacturing technique. it can.

According to the semiconductor light emitting device of the present invention, the common electrode connected to one conductive semiconductor layer of the light emitting element, the individual electrode connected to the opposite conductive semiconductor layer of the light emitting element, and the silicon electrode connected to the silicon semiconductor element By forming all the wirings made of metal, the wiring resistance of these electrodes and wirings can be reduced, the luminous efficiency of the light emitting elements can be improved, and the light emission variation between the light emitting elements can be reduced.

Further, according to the semiconductor light emitting device of the present invention, a part of the common electrode is formed in a band shape in a region between the light emitting element and the output transistor and the silicon semiconductor element, and the common electrode is connected to the adjacent output transistor. By connecting to the one conductivity type semiconductor layer of the light emitting element through a region between them, the wiring resistance of the common electrode can be reduced and a voltage drop at the common electrode can be effectively suppressed, thereby also achieving the luminous efficiency of the light emitting element. And the variation in light emission between the light emitting elements can be reduced. In this case, the electrode formation can be simplified, so that the manufacturing cost can be reduced and the yield can be improved. Further, in this case, by providing the common electrode in an abnormal growth region where the compound semiconductor layer abnormally grows when forming a light emitting element or an output transistor, this region can be effectively used as an electrode installation portion, The size of the semiconductor light emitting device can be reduced, and the cost can be reduced.

Further, according to the semiconductor light emitting device of the present invention, the silicon substrate has a rectangular shape, and all the external connection pads are provided along one long side of the silicon substrate, and a plurality of external connection pads are provided along the other long side. By arranging the light emitting elements of the above, the output transistor and the silicon semiconductor element are arranged in the region between them, thereby reducing the overall structure of the semiconductor light emitting device,
The manufacturing cost can be reduced. In this case, since the position of the external connection pad to which the bonding wire or the like is bonded can be kept away from the light emitting element, it is effective to prevent the light of the light emitting element from being reflected by the bonding wire and forming an unnecessary latent image on the photoconductor. Can be prevented,
This eliminates the need for a countermeasure against reflected light, thereby reducing the manufacturing cost and improving the reliability of the optical printer head on which the semiconductor light emitting device is mounted.

[0023]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the accompanying drawings. 1A is a plan view of a semiconductor light emitting device according to one embodiment of the present invention, FIG. 1B is a cross-sectional view taken along line AA ′ of FIG. 1A, and FIG. 1C is a cross-sectional view taken along line BB ′ of FIG. 1 is a silicon substrate, 2 is a silicon semiconductor element for driving a light emitting element, 3 is a gate electrode of the silicon element, 4 is a source electrode of the silicon element, 5 is a drain electrode of the silicon element, 6
Is a gate insulating film, 7 is an insulating film, 8 is one conductivity type compound semiconductor layer made of p-type GaAs or the like, 9 is a reverse conductivity type compound semiconductor layer made of n-type GaAs or the like, 10 is a common electrode (anode electrode), 11 Is an individual electrode (cathode electrode), 12
Is a wiring connected to source / drain electrodes made of Al or the like, 13 is an interlayer insulating film, 14 is a protective film, 15 is a light emitting element, 16 is an external connection pad to which a bonding wire is bonded, 17 is a light emitting element row, 18 Is an n-type MESFET as an output transistor, and 19 is an n-type MESFET
, A drain electrode of an n-type MESFET, 21 a source electrode of the n-type MESFET, 22 an interlayer insulating film, 23 an abnormal growth region, and 24 an insulating mask.

The semiconductor light emitting device according to the present embodiment includes a plurality of light emitting elements 15 formed by sequentially laminating a one conductivity type compound semiconductor layer 8 and a reverse conductivity type compound semiconductor layer 9 on an upper surface of a rectangular silicon substrate 1. A plurality of output transistors 18 for controlling the supply of power to the light emitting elements 15; an active region made of silicon; a source electrode 4, a drain electrode 5 and a gate electrode 3; And a silicon semiconductor element 2 for supplying the same.

The silicon semiconductor element 2 is a light emitting element 1
5 and includes a shift register and the like. That is, the source electrode 4 and the drain electrode 5 are provided separately from each other in the silicon substrate 1.
The gate electrode 3 is formed on the silicon substrate 1 between the gate electrode 3 and the drain electrode 5. The silicon semiconductor elements 2 are provided in a row on one end side of the silicon substrate 1. An external connection pad 16 for supplying a drive signal to these silicon semiconductor elements from an external circuit (not shown).
Is provided on one end side of the silicon substrate 1 further along the one long side of the silicon substrate 1 than the silicon semiconductor element 2.

The light-emitting element 15 is formed of a laminated body in which one conductive type compound semiconductor layer 8 made of p-type GaAs or the like and an opposite conductive type compound semiconductor layer 9 made of n-type GaAs or the like are sequentially stacked. Electrode 1 on the semiconductor layer 8
0 is provided so as to be connected, and a reverse conductivity type compound semiconductor layer 9 is provided on this one conductivity type semiconductor layer 8 in a small area so as to expose a part of the one conductivity type semiconductor layer 8. That is, the common electrode 10 is provided on the silicon semiconductor element 2 side of the light emitting element 15. The light emitting elements 15 are arranged on the other end side of the silicon substrate 1 along the other long side of the silicon substrate 1.

The common electrode 10 between the plurality of light emitting elements 15 is provided so as to be connected in the column direction of the plurality of light emitting elements 15, and the external connection pads 16 of the common electrode 10 are connected to both ends of the silicon substrate 1 in the longitudinal direction. , And provided on one end side of the silicon substrate 1 with respect to the silicon semiconductor element 2. Therefore, the external connection pads 2a of the silicon semiconductor element 2 and the external connection pads 16 of the common electrode 10 can be provided on the same side of the silicon substrate 1, and the size of the semiconductor device can be reduced. That is, the external connection pads 2a and 16 are formed in a size of about 100 μm × 100 μm, for example.
If the external connection pads 2a and 16 are provided on different end portions of the silicon substrate 1, the silicon substrate 1 will have a large area by the size and the required interval. However, the present invention can solve this problem. Also, since the arrangement of the external connection pads can be simplified, the wire bonding process can be shortened,
The yield can be improved.

The opposite conductivity type semiconductor layer 9 of the light emitting element 15
Since the individual electrode is connected to the output transistor 18 and is connected to the output transistor 18, the output transistor 18 can be formed of a compound semiconductor layer. The output transistor 18 is formed of a reverse conductivity type compound semiconductor layer 9 made of n-type GaAs or the like, and is epitaxially grown simultaneously with the light emitting element 15. Thus, the size of the output transistor 18 can be reduced.

Although a GaAs n-type MESFET is used as the output transistor 18 here, HEMT, HBT or the like may be used instead.

FIG. 2 is a sectional view of each process for explaining the method of manufacturing the semiconductor light emitting device described above. As shown in FIG. 2A, the silicon semiconductor element 2 is formed by a conventionally known method. Next, as shown in FIG. 2B, an insulating mask 24 is formed on the surface of the silicon substrate 1 on which the silicon semiconductor element 2 is formed, and the insulating mask 24 in an opening region where the light emitting element 15 is formed is removed by etching. I do.

Next, as shown in FIG. 2C, the silicon substrate 1 in the opening region of the insulating mask 24 or the insulating film 6 is formed.
A p-type gallium arsenide (GaAs) 8 and an n-type gallium arsenide (GaAs) 9 are sequentially stacked thereon. At this time, an abnormal growth region 23 of a compound semiconductor having a large thickness is formed at the end of the opening region. In this embodiment, the abnormal growth region 2
Since the insulating mask 24 or the opening region of the insulating film 6 is formed so that 3 is formed between the silicon semiconductor element 2 and the light emitting element 15 and the output transistor 18, this abnormal growth area is effective as an electrode installation part. And the overall structure of the semiconductor light emitting device can be reduced in size. Further, the electrode area can be increased, the luminous efficiency of the light emitting element 15 is improved,
Light emission variations between the light emitting elements 15 can also be reduced.

Next, as shown in FIG. 2D, the abnormal growth region 23, the p-type gallium arsenide (GaAs) 8 and the n-type gallium arsenide (GaAs) 9 are mesa-etched.

Next, as shown in FIG. 2E, formation of the common electrode 10, light emitting element 15 and output transistor 1
8 are individually separated from each other by p-type gallium arsenide (G
aAs) Step etching up to the middle of 8 is performed. At this time, the common electrode 10 is formed by the silicon semiconductor element 2 and
It is better to provide between the light emitting element 15 and the output transistor 18. Thus, the overall structure of the semiconductor light emitting device can be reduced in size and cost can be reduced. further,
Since the external connection pad 16 of the common electrode 10 is provided at the same position as the external connection pad 2a of the silicon semiconductor element 2, the overall structure of the semiconductor light emitting device can be reduced in size and cost can be reduced. Furthermore, since the external connection pad 2a can be kept away from the light emitting element 15, reflection of light emitted from the light emitting element 15 by a wire can be prevented, and a countermeasure against reflected light is not required, so that cost can be reduced.

Next, as shown in FIG. 2F, the insulating mask 24 in the contact hole portions of the source / drain electrodes 4 and 5 of the silicon semiconductor element 2 is opened by etching. Silicon semiconductor device 2, p-type gallium arsenide (GaAs)
s) Silicon / aluminum laminated electrode 12 and silicon / aluminum laminated common electrode 1 on 8 and insulating film 6
0 are simultaneously formed. By simultaneously forming the silicon / aluminum laminated electrode 12 and the silicon / aluminum laminated common electrode 10, the number of process steps, the working time, and the cost of raw materials can be reduced, and the manufacturing cost can be reduced. it can. The silicon / aluminum laminated electrode 12 and the silicon / aluminum laminated common electrode 10 are preferably made of aluminum, an alloy thereof, or a laminate thereof. As a result, the wiring material cost can be reduced, and the pattern formation is easier than in the case of a noble metal such as gold, so that the manufacturing cost can be reduced and the yield can be improved.

Next, as shown in FIG. 2G, an interlayer insulating film 13 of silicon oxide is formed on the light emitting element 15 so that the ohmic junction between the p-type gallium arsenide (GaAs) 8 and the common electrode 10 is not broken. Then, a region of the interlayer insulating film 13 where the individual electrode 11 of the light emitting element is bonded is opened by etching.

Next, as shown in FIG. 2H, an individual electrode 11 is formed over the n-type gallium arsenide (GaAs) 9, the output transistor 18, and the silicon semiconductor element 2. Since this individual electrode 11 is made of aluminum or its alloy or a laminate thereof, the cost of wiring material can be reduced, and the pattern formation is easier than that of a noble metal such as gold, so that the manufacturing cost can be reduced and the yield can be improved.

Next, as shown in FIG. 2I, after an interlayer insulating film 22 is formed, the gate electrode 19 of the output transistor 18 is formed by a laminated structure containing aluminum, an alloy thereof, or aluminum. A protective film 14 made of silicon nitride or the like is formed in an area other than the opening of the electrode pad.

The light emitting element is not limited to an LED, but may be, for example, an LD (Laser Diode).
e) and VCSEL (Vertical Cavity S)
surface Emitting Laser Diode
e) and the like. Further, the structure of the light emitting element is not limited to this structure, and may be, for example, a double hetero structure having high luminous efficiency. Although GaAs has been mainly described as a material, other materials (eg, aluminum gallium arsenide (AlGaAs), indium gallium arsenide (InGaAs), aluminum indium gallium phosphide (AlGaInP), indium gallium arsenide phosphide (InGaAsP) ) Etc.).

When driving the light emitting element 15, the light emitting element 15 is driven by supplying a logic circuit signal such as a light emitting data signal and a clock signal and a constant voltage from the external connection pad 16 for input.

The structure obtained in this manner is a semiconductor light emitting device according to one embodiment of the present invention, and a main structural portion of the semiconductor light emitting device of the present invention is formed through the above-described steps.

[0041]

According to the semiconductor light emitting device of the present invention, the output transistor is formed of the opposite conductive type compound semiconductor layer of the same quality as the light emitting element, so that the area of the output transistor is reduced and the entire semiconductor light emitting device itself is reduced. Construction,
In addition, the overall structure of the optical printer head on which the semiconductor light emitting device is mounted can be reduced in size. In this case, since the light emitting element and the output transistor are formed of the same compound semiconductor layer, the productivity of the semiconductor light emitting device can be maintained at a high level by forming both at the same time by a conventionally known semiconductor manufacturing technique.

According to the semiconductor light emitting device of the present invention, the common electrode connected to one conductive semiconductor layer of the light emitting element, the individual electrode connected to the opposite conductive semiconductor layer of the light emitting element, and the silicon electrode connected to the silicon semiconductor element By forming all the wirings made of metal, the wiring resistance of these electrodes and wirings can be reduced, the luminous efficiency of the light emitting elements can be improved, and the light emission variation between the light emitting elements can be reduced.

Further, according to the semiconductor light emitting device of the present invention, a part of the common electrode is formed in a band between the light emitting element and the output transistor and the silicon semiconductor element, and the common electrode is connected to the adjacent output transistor. By connecting to the one conductivity type semiconductor layer of the light emitting element through a region between them, the wiring resistance of the common electrode can be reduced and a voltage drop at the common electrode can be effectively suppressed, thereby also achieving the luminous efficiency of the light emitting element. And the variation in light emission between the light emitting elements can be reduced. In this case, the electrode formation can be simplified, so that the manufacturing cost can be reduced and the yield can be improved. Further, in this case, by providing the common electrode in an abnormal growth region where the compound semiconductor layer abnormally grows when forming a light emitting element or an output transistor, this region can be effectively used as an electrode installation portion, The size of the semiconductor light emitting device can be reduced, and the cost can be reduced.

Further, according to the semiconductor light emitting device of the present invention, the silicon substrate has a rectangular shape, and all the external connection pads are provided along one long side of the silicon substrate, and a plurality of external connection pads are provided along the other long side. By arranging the light emitting elements of the above, the output transistor and the silicon semiconductor element are arranged in the region between them, thereby reducing the overall structure of the semiconductor light emitting device,
The manufacturing cost can be reduced. In this case, since the position of the external connection pad to which the bonding wire or the like is bonded can be kept away from the light emitting element, it is effective to prevent the light of the light emitting element from being reflected by the bonding wire and forming an unnecessary latent image on the photoconductor. Can be prevented,
This eliminates the need for a countermeasure against reflected light, thereby reducing the manufacturing cost and improving the reliability of the optical printer head on which the semiconductor light emitting device is mounted.

[Brief description of the drawings]

1A is a plan view of a semiconductor light emitting device according to one embodiment of the present invention, FIG. 1B is a cross-sectional view taken along line AA ′ of FIG.
(C) is a sectional view taken along line BB 'of (a).

FIGS. 2A to 2I are cross-sectional views for explaining steps of a method for manufacturing the semiconductor light emitting device of FIG.

FIG. 3 is a perspective view of an optical printer head formed using a conventional semiconductor light emitting device.

FIG. 4 is a sectional view showing a conventional semiconductor light emitting device.

[Explanation of symbols]

1 ... silicon substrate, 2 ... silicon semiconductor element,
3 gate electrode of silicon device 4 source electrode of silicon device 5 drain electrode of silicon device 6 gate oxide film 7 insulating film 8
One conductivity type compound semiconductor layer, 9 ... reverse conductivity type compound semiconductor layer, 10 ... common electrode, 11 ... individual electrode, 12
... wiring, 13 ... interlayer insulating film, 14 ... protective film, 15 ... light emitting element, 16 ... external connection pad,
17 ... light emitting element row, 18 ... output transistor,
19 ... gate electrode of n-type MESFET, 20 ...
Drain electrode of n-type MESFET, 21 ... n-type ME
Source electrode of SFET, 22 ... interlayer insulating film, 23
..Abnormal growth region, 24 ... insulating mask, 31 ..
・ Substrate, 32 ・ ・ ・ Bonding wire, 33 ・ ・ ・ Wiring pattern, 34 ・ ・ ・ LED, 35 ・ ・ ・ Monolithic element, 36 ・ ・ ・ Conductive adhesive, 37 ・ ・ ・ Input connector, 38 ・ ・ ・Silicon substrate, 39: element isolation layer, 40: wiring section, 41: electrode pad section, 42
... Diffusion resistance, 43 ... Insulating layer, 44 ... Driver element

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5F041 BB26 CA33 CA35 CA36 CA39 CB33 5F073 AB05 AB21 BA07 CA04 CA13 CB04

Claims (4)

[Claims] 1. A plurality of light emitting elements each having a one conductivity type compound semiconductor layer and a reverse conductivity type compound semiconductor layer sequentially laminated on an upper surface of a silicon substrate, and a plurality of light emitting elements for controlling power supply to these light emitting elements. An output transistor, an active region made of silicon, a source / drain electrode, and a semiconductor light emitting device including a silicon semiconductor element having a gate electrode and supplying a drive signal to the output transistor, wherein the output transistor is A semiconductor light-emitting device, comprising a compound semiconductor layer of the opposite conductivity type having the same quality as the light-emitting element. 2. The method according to claim 1, wherein the common electrode connected to one conductive semiconductor layer of the light emitting element, the individual electrode connected to the opposite conductive semiconductor layer of the light emitting element, and the wiring connected to the silicon semiconductor element are all metal. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is formed by: 3. A part of the common electrode is formed in a band shape in a region between the light emitting element and the output transistor and the silicon semiconductor element, and the common electrode and the one conductivity type semiconductor layer of the light emitting element are adjacent to each other. 3. The semiconductor light emitting device according to claim 2, wherein the semiconductor light emitting device is connected through a region between the output transistors. 4. The silicon substrate has a rectangular shape, and all the external connection pads are arranged along one long side of the silicon substrate, and a plurality of light emitting elements are arranged along the other long side.
4. The semiconductor light emitting device according to claim 1, wherein an output transistor and a silicon semiconductor element are provided in a region between the two.