JP2001316890A - Method and equipment for plating - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plating method and a plating liquid treating equipment which can surely remove bubbles formed between a treating liquid and a surface to be treated of a substrate to be treated. SOLUTION: In a plating unit M1, a driver 61 is arranged to keep a wafer W right over a plating liquid tank 42 and rotate the wafer W in an approximately horizontal plane, and a cylinder 67 for moving the driver 61 approximately horizontally is attached to the driver 61. Bubbles attached to a surface to be plated of a wafer W are removed, by means of rotating the wafer W along with moving the wafer W from the plating position (IV) above a central axis of a plating liquid tank 42 to a decentered position (V) from a center of the plating liquid tank approximately horizontally, by means of driving the cylinder 67 in a contacted condition for the surface to be plated of the wafer W with a liquid surface of the plating liquid.

Description

DETAILED DESCRIPTION OF THE INVENTION

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plating process for a substrate to be processed such as a semiconductor wafer, and more particularly, to a process for bringing a substrate to be processed into contact with a plating solution substantially horizontally so as to contact the surface of the substrate to be processed. The present invention relates to a plating method for performing a liquid treatment and a plating apparatus.

2. Description of the Related Art Conventionally, as a processing apparatus for forming a metal layer on a surface of a substrate to be processed such as a semiconductor wafer W (hereinafter simply referred to as a "wafer"), for example, a sputtering apparatus for forming a metal layer in a vapor phase Processing apparatuses have been used, but with the improvement in the degree of integration of semiconductor devices, the use of plating apparatuses that form a metal layer in a liquid phase due to the problem of embedding has become mainstream. FIG. 32 is a schematic perspective view of a typical plating apparatus. As shown in FIG. 32, in this plating apparatus, a substantially cylindrical plating solution tank 201 for storing a plating solution, and a wafer holder for holding the wafer W so that the surface to be plated of the wafer W contacts the surface of the plating solution. 2
02 is provided. The wafer holder 202 moves up and down to bring the surface to be plated of the wafer W into contact with the surface of the plating solution to form a metal layer on the surface to be plated of the wafer W.

In the plating step, ions and the like in the plating solution adhere to the surface to be plated of the wafer W to form a metal layer on the surface of the wafer W to be plated. The liquid surface and the surface to be plated of the wafer W must be completely in contact. However, when the surface to be plated of the wafer W is brought into contact with the liquid surface of the plating solution, air enters between the liquid surface of the plating solution and the surface to be plated of the wafer W, and air bubbles are generated on the surface of the wafer W to be plated. There is a problem that a uniform metal layer cannot be formed due to adhesion. Further, in the electrolytic plating step of forming an electric field between the electrode 203 in the plating solution tank 201 and the wafer W to form a metal layer on the surface to be plated of the wafer W, the plating solution causes a chemical reaction. There is a problem that a metal layer is formed on the surface to be plated of the wafer W and bubbles of, for example, hydrogen and oxygen are generated, and the bubbles adhere to the surface to be plated of the wafer W, so that a uniform metal layer cannot be formed. In order to solve this problem, the wafer W that has been brought into contact with the surface of the plating solution is placed in a plating solution tank 201
A device that removes bubbles attached to the surface to be plated of the wafer W by rotating coaxially with the center of the wafer W has been proposed. After the bubble removal, the wafer W is removed from the plating solution tank 20.
A device for removing bubbles generated during the electroplating process attached to the surface to be plated of the wafer W by forming a metal layer on the surface to be plated of the wafer W while rotating coaxially with the center of the wafer W is proposed. Have been. However, in the conventional apparatus, the wafer W is rotated coaxially with the center of the plating solution tank 201 to remove bubbles. Therefore, the plating solution is rotated by the laminar flow of the plating solution accompanying the rotation of the wafer W. There is a problem that a vortex is generated at the center of the tank 201, and bubbles are collected at the center of the plating solution tank 201, so that the bubbles are hardly removed. The present invention has been made to solve the above-mentioned conventional problems. That is,
The present invention provides a plating method capable of reliably removing bubbles formed between the processing liquid and the processing surface of the processing substrate when the processing surface of the processing substrate is brought into contact with the processing liquid, and An object of the present invention is to provide a plating apparatus. Still another object of the present invention is to provide a plating method and a plating apparatus capable of reliably removing bubbles generated when an electric field adhered to a surface to be processed of a substrate to be processed is formed. I do.

According to a first aspect of the present invention, there is provided a plating method, comprising: a processing tank configured to perform a predetermined electrolytic plating process on a substrate to be processed and to store a plating solution; A cathode electrode configured to be in contact with the substrate to be processed, and an anode electrode disposed in the processing bath, a plating method that performs plating using a plating apparatus including: In a state where the surface of the substrate to be processed is brought into contact with the surface of the processing liquid contained in the processing tank, and the substrate to be processed is eccentric from the central axis of the processing tank, Rotating the substrate at a first rotation speed, and performing a plating process on the surface to be processed of the substrate to be processed. Claim 1
In the plating method, when the surface to be processed of the substrate to be processed is brought into contact with the processing solution, bubbles formed between the processing solution and the surface to be processed of the substrate to be processed are eccentric from the center of the processing solution tank. Since the bubble is removed, the bubble can be reliably removed. In the plating method according to the second aspect, a predetermined electrolytic plating process can be performed on a substrate to be processed, and a processing tank configured to store a plating solution can be brought into contact with the substrate to be processed. A plating method for performing plating using a plating apparatus having a cathode electrode configured as described above and an anode electrode disposed in the processing tank, wherein the processing solution contained in the processing tank is provided. The substrate to be processed is rotated at a first rotation speed in a state where the surface of the substrate to be processed is in contact with the liquid surface of the substrate and the substrate is eccentric from the central axis of the processing bath. And plating the processing target surface of the processing target substrate at a position substantially coaxial with the central axis of the anode electrode. In the plating method according to claim 2, after the substrate to be processed is brought into contact with the surface of the processing liquid at a position eccentric from the central axis of the processing tank and rotated at the first rotation speed,
Since the plating process is performed by returning the substrate to be processed to a position substantially coaxial with the central axis of the anode electrode, a uniform electric field is formed on the lower surface side of the substrate, and a uniform plating layer can be formed. The plating method according to claim 3 is the plating method according to claim 1 or 2, wherein the step of performing the plating is a step of rotating the substrate to be processed at a second rotation speed. It is characterized by. Claim 3
In the plating method according to claim 1, in the plating method according to claim 1 or 2, the plating is performed while rotating the substrate to be processed at a second rotation speed. Can be effectively removed and a uniform plating layer can be obtained by forming a uniform electric field. The plating method according to claim 4 is the plating method according to claim 3, wherein the second rotation speed is equal to or smaller than the first rotation speed. I do. According to a fourth aspect of the present invention, in the plating method according to the third aspect, the second rotation speed is equal to or smaller than the first rotation speed. Bubbles generated at the time can be effectively removed, and a uniform plating layer can be obtained by forming a uniform electric field. A plating method according to a fifth aspect is the plating method according to the first to fourth aspects, wherein the plating method is performed on one substrate to be processed. . In the plating method according to the fifth aspect, in the plating method according to any one of the first to fourth aspects, the plating method is performed on one substrate to be processed. Can be contacted at a position eccentric from the processing tank, and can be returned to a position substantially coaxial with the processing tank during plating processing to perform plating. And the formation of a uniform plating layer can be achieved at the same time. The plating method of claim 6 is
The plating method according to any one of claims 1 to 4, wherein the plating method is a method that is performed simultaneously on a plurality of substrates to be processed. In the plating method according to the sixth aspect, in the plating method according to any one of the first to fourth aspects, since the plating method is performed on a plurality of substrates to be processed simultaneously, the processing speed can be improved. The plating apparatus according to claim 7 is capable of performing a predetermined electrolytic plating process on a processing substrate and contacting a processing tank configured to be capable of storing a plating solution and the processing target substrate. The configured cathode electrode, the anode electrode disposed in the processing tank, and the substrate to be processed, at least a position on the central axis of the processing tank, and movably to a position eccentric from the central axis, And substrate holding means configured to rotate the substrate to be processed at each position. 8. The plating apparatus according to claim 7, wherein the substrate to be processed is movably held at least at a position on the central axis of the processing tank and at a position eccentric from the central axis, and at each position, the substrate to be processed is provided. Is provided with a substrate holding means for rotatably holding the substrate, so that the substrate to be processed is brought into contact with the processing liquid while being rotated at a position eccentric from the central axis of the processing tank, and then returned to a position on the central axis. A plating process can be performed. As a result, it is possible to remove bubbles and form a uniform plating layer. The plating apparatus of claim 8 is
A processing tank configured to be capable of performing a predetermined electrolytic plating process on the substrate to be processed, and capable of storing a plating solution, and a cathode electrode configured to be in contact with each of the substrates to be processed. An anode electrode disposed in the processing bath, and a substrate holding unit configured to be rotatable at a position eccentric from the central axis of the processing bath. And In the plating apparatus according to the eighth aspect, since the substrate holding means for rotatably holding a plurality of substrates to be processed at a position eccentric from the center axis of the processing tank is provided, the plurality of substrates to be processed can be held at one time. The processing can be performed, and the processing speed can be improved. The plating apparatus according to claim 9 is the plating apparatus according to claim 8, wherein the anode electrodes are arranged in the same number as the plurality of substrates to be processed, and are eccentric from a central axis of the processing tank. It is characterized by being arranged substantially coaxially with the position. In the plating apparatus according to the ninth aspect, in the plating apparatus according to the eighth aspect, the anode electrodes are disposed in the same number as the plurality of substrates to be processed, and are eccentric from a center axis of the processing bath. Since it is disposed substantially coaxially, it is possible to efficiently remove bubbles by arranging water at an eccentric position. Further, since the anode electrode is provided coaxially with the substrate to be processed, a uniform electric field is formed between the substrate to be processed and the anode electrode, and a uniform plating layer can be obtained.

DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment)
About the plating system according to the first embodiment of the present invention,
Will be explained. FIG. 1 shows a plating system according to the present embodiment.
FIG. 2 is a perspective view of the plating system, and FIG.
FIG. 3 is a front view of the plating system.
FIG. 4 is a side view of the plating system. FIG.
As shown in FIG. 4 to FIG.
Carrier station 2 for loading / unloading / transporting W
And process station 3 for actually processing wafers W
It is composed of Carrier station 2
The mounting table 21 accommodating the wafer W and the mounting table 21
Accessed the carrier cassette C and housed in it
Take out the wafer W or collect the processed wafer W
And a sub-arm 22 for holding. Ki
The carrier cassette C contains a plurality of wafers, for example, 25 wafers.
W is stored vertically at equal intervals with horizontal
It has become so. Example on the mounting table 21 in the X direction in the figure
For example, four carrier cassettes C are provided.
ing. The sub-arm 22 is a laser disposed in the X direction in FIG.
While moving on the vertical axis (Z direction), that is, FIG.
Can move up and down in the direction perpendicular to the paper surface and can rotate in the horizontal plane
It has a simple structure. This sub arm 22 is substantially in a horizontal plane
And a wafer holding member 23 which can be extended and contracted.
The mounting table 2 is expanded and contracted by
1 unprocessed wafers of the carrier cassette C placed on 1
W is removed from carrier cassette C or processing is completed.
So that the wafer W is stored in the carrier cassette C.
Has become. The sub arm 22 is connected to a
The wafer W before and after processing is also received between the
It is designed to be handed over. Process station 3
Is outside of a rectangular or cubic box as shown in FIGS.
The entire perimeter is a corrosion resistant material, such as
Can be made of resin or a metal plate whose surface is coated with resin
The housing 31 is covered. Process station
The interior of the housing 3 is substantially cubic or straight as shown in FIGS.
It has a rectangular box-shaped configuration, and a processing space S is inside.
Is formed. The processing space S is as shown in FIGS.
And a bottom plate at the bottom of the processing space S.
33 are attached. The processing space S includes a plurality of processes.
Processing units, for example, four plating units M1 to M
4 is, for example, a main arc described below in the processing space S.
Each of them is arranged around the system 35. 1 and 2
The wafer W is transported to almost the center of the bottom plate 33 as shown in FIG.
Main arm 35 is provided. This May
Arm 35 can be raised and lowered and rotatable in a substantially horizontal plane.
In addition, two upper and lower
The wafer holding member 36 is provided.
36 around the main arm 35 by expanding and contracting
The wafers W before and after the processing are disposed in the disposed processing unit.
It can be taken in and out. Also the main arm 3
5 moves vertically to access the upper processing unit.
It is configured to be accessible from the lower processing unit.
The wafer W is transferred to the upper processing unit or vice versa.
From the upper processing unit to the lower processing unit.
Eha W is transported. In addition,
The arm 35 has a mechanism for turning the held wafer W upside down.
From one processing unit to another
A structure that allows the wafer W to be turned upside down while transferring the wafer W
Have. Note that the function of reversing the wafer W is
This is not an essential function of the arm 35. There are other processes on the upper side
Processing unit, for example, the cleaning unit 100
The side close to the base carrier station, that is, the plating process
They are arranged above the units M1 and M2, respectively.
Also, the annealing processing unit is, for example, a two-carrier
Station far side, that is, the plating unit
It is also possible to arrange each above the M3 ~ M4
It is. Housing 31 of process station 3
And is disposed at a position facing the carrier station 2.
The housing 31a has three open / close ports as shown in FIG.
Possible openings G1 to G3 are provided. These
G1 is a plating unit M1 disposed on the lower side.
M2 and the position of the intermediate mounting table 37
Opening from the carrier cassette C to the sub arm 2
2 removes the unprocessed wafer W from the process station
It is used when carrying in the car 3. Opening when loading
G1 is opened and the sub arm 2 holding the unprocessed wafer W
2 extends the wafer holding member 23 into the processing space S and
The wafer W is placed on the transfer table 37. This relay mounting table 37
The main arm 35 extends the wafer holding member 36
While holding the wafer W placed on the
Operate into processing units such as processing units M1 to M4
Huh. The remaining openings G2 and G3 are carriers in the processing space S.
Cleaning processing unit arranged near station 2
100, and these openings are provided.
The sub-arm 22 in the processing space S is connected via the sections G2 and G3.
The wafer is directly transferred to the cleaning unit 100 disposed on the upper side.
The wafer W that has been processed by extending the holding member 23 is
You can receive it. Also processing empty
In the interval S, a downward airflow is formed from above in FIG.
Clean air supplied from outside the system
Supplied from the upper part of the space S,
Flowing down to the processing units M1 to M4, the processing space
So that it is exhausted from the bottom of the S and out of the system
Has become. Thus, the inside of the processing space S is cleaned from top to bottom.
The lower plating process unit
Empty from M1 to M4 toward the upper cleaning unit 100
I don't want to go. Therefore, always
The processing unit side is kept in a clean atmosphere. In addition,
The stick processing units M1 to M4 and the cleaning processing unit 100
Inside each processing unit is smaller than the processing space S of the system.
Pressure, and the air flow is
Flows into the processing units, and the system
It is exhausted outside the system. Therefore, processing from the processing unit side
Dirt is prevented from being diffused to the physical space S side. Next, the book
Description of Plating Unit M1 According to Embodiment
I do. FIG. 5 shows a plating unit M according to the present embodiment.
FIG. 6 is a schematic perspective view of FIG. 1, and FIG.
FIG. 7 is a schematic vertical sectional view including a partially enlarged view, and FIG.
It is a schematic plan view of the plating unit. FIG. 5 and FIG.
As shown in FIG. 6, in the plating unit M1,
The entire knit is covered by a closed housing 41
You. The housing 41 is also made of a corrosion-resistant material such as resin.
Have been. The inside of the housing 41 is two steps up and down,
The first processing unit A located at the upper level and the second processing unit A located at the upper level
The structure is divided into the main part B. First processing unit A
Is provided with a plating solution tank. This message
The liquid tank 42 has an inner tank 42a and an inner tank 42 outside the inner tank 42a.
and a double tank of an outer tank 42b arranged concentrically with
When the inner bath 42a is filled with the plating solution.
The liquid level of the liquid was stopped at a plating position (IV) described later.
Higher than the plating surface of the wafer W held by the driver 61
The inner tank 42a is fixed so as to come to the right position. Inner tank
42a is formed in a substantially cylindrical shape with a bottom, and the inner tank 42a
Is kept substantially horizontal. Inside of the inner tank 42a
Is sprayed with a plating solution from the bottom to the top of the inner tank 42a.
The ejection pipe 43 to be ejected is set inward from substantially the center of the bottom of the inner tank 42a.
The tank 42a protrudes to near the center in the depth direction. Eruption
Around the tube 43, for example, a plurality of copper balls are collected and formed.
The electrode 44 as a substantially disc-shaped anode electrode is formed in the inner tank 42a.
Copper concentrically arranged and functioning as an electrode 44
Dissolving the spheres in a plating solution containing, for example, copper sulfate
This prevents a decrease in copper ions in the plating solution. Ma
The electrode 44 has a lead wire outside the outer tank 42b.
Power supply is extended to the power supply not shown
As a result, a later-described driver for holding the electrode 44 and the wafer W is formed.
Electric field between the convex contact 64 provided on the
Is formed. With the outer periphery of the end of the ejection pipe 43
The inner tank 42a is vertically divided between the inner tank 42a and the inner tank 42a.
A diaphragm 45 is provided above the electrode 44.
Above the inner tank 42a (hereinafter referred to as "upper of the inner tank")
Say. ) Is supplied with a plating solution from the ejection pipe 43,
45, below the inner tank 42a (hereinafter referred to as "under the inner tank").
Side. ) Includes a plating solution from a circulation pipe 46 described later.
Is supplied. Also, this diaphragm 45
Permeates ions, but dissolves copper spheres as electrodes 44
Impurities and the surface of the wafer W to be plated
For example, oxygen and hydrogen generated during the process of forming
It is configured not to allow such bubbles to pass through. Also,
A circulation pipe is located at a position eccentric from the center of the bottom of the inner tank 42a.
46, 47 are provided, and the circulation pipes 46, 47 are provided.
Between them, a pump (not shown) is provided. This pong
Activate the pump to circulate the plating solution under the inner tank 42a.
It has become so. The outer tank 42b is similar to the inner tank 42a.
The outer tank 42b is formed in a substantially cylindrical shape with a bottom.
The surface is maintained substantially horizontal. The bottom of the outer tank 42b is
There are two outlets, and this outlet has a pipe 48
Is connected. Between this pipe 48 and the ejection pipe 43
Is provided with a pump 49, and operates the pump 49
And overflow from the inner tank 42a to the outer tank 42b.
The stored plating solution is supplied again to the upper side of the inner tank 42a.
It has become. Also, a plating solution is stored in the pipe 48.
Tank 50 is connected to pump 51 via valve 52
The pump 51 is operated and the valve 5 is operated.
2 to open the plating solution in the tank 50 into the inner 42a.
It is designed to be supplied to the tank. The second processing unit B has c
The driver 61 as a holding mechanism for holding
It is arranged right above the center of the liquid tank 42. Also dry
A holder 61 holds a wafer W, and a holder 62 for holding the wafer W.
A motor 63 for rotating the wafer W in a substantially horizontal plane together with 62
It is composed of The holding unit 62 holds one wafer W
It is formed in a substantially cylindrical shape with a bottom that can be stored substantially horizontally.
As shown in a partially enlarged view of FIG.
A voltage is applied to the wafer W at, for example, 128 equally divided positions.
An additional convex contact 64 is provided. This
Is connected to a power source (not shown) through a conducting wire.
I'm in contact with me. Wafer on convex contact 64
The surface to be plated with W
Since the wafer W on which the thin film is formed is placed, the convex contact
The voltage applied to the plate 64 is also marked on the plating surface of the wafer W.
Be added. Further, a seal portion is provided on the inside of the bottom surface of the holding portion 62.
The material 65 is provided concentrically, and the wafer W is plated.
When the surface is brought into contact with the plating solution, the plating solution
To prevent infiltration into In the outer container of the motor 63
Has a support beam 66 for supporting the driver 61
I have. The support beam 66 has a horizontally expandable and contractable cylinder 6.
7 for driving the cylinder 67.
The driver 61 supported by the support beam 66 is substantially horizontal.
To be moved. The end of the support beam 66 is
Ascending with respect to the inner wall of the jing 41 via the guide rail 68
It is attached so that it can descend. Support beam 66 is further up and down
To the housing 41 via a cylinder 69
The cylinder 69 is
Guides the driver 61 supported by the support beam 66
It is moved up and down along the rail 68. Concrete
Specifically, as shown in FIG. 6, the driver 61 carries the wafer W.
Transfer position (I) for transfer and plating of wafer W
Cleaning position (II) for cleaning the surface,
Spin dry for draining (draining) the stick surface
Position (III) and the voltage while immersed in the plating solution
At the plating position (IV) where a plating layer is formed by applying
Mainly four different heights on the central axis of the plating bath 42
To go up and down between the positions. The driver 61 is plated
At the same height as the center of the liquid tank 42 and the plating position (IV)
There is a deviation from the center of the plating solution tank 42 for removing bubbles described later.
Between the centered position (V) and mainly two different positions
Move horizontally. This plating position (IV) and eccentric position
The distance between the wafer (W) and the wafer W immersed in the plating solution
Vortex around the center of plating bath 42 when rotated
The distance is such that turbulence will occur without
For example, the range of 1/2 to 1/4 of the diameter of the wafer W is preferable.
Good. Here, the position eccentric to the plating position (IV)
The reason why the preferable range of the distance to (V) is the above range is as follows.
Above or below the above range, remove bubbles sufficiently
This is because there is an adverse effect that it cannot be performed. First processing
Between the section A and the second processing section B, the cleaning nozzle 70 and the
7 having a built-in exhaust port 71 disposed below
2 are provided. In the center of this separator 72,
The wafer W held by the driver 61 and the first processing unit A
A through-hole is provided so as to be able to move back and forth between the second processing section B.
Have been killed. Further, a first processing unit A and a second processing unit B
The wafer W is placed on the housing at the
The gate valve 73 that carries in and out of the processing unit M1
Is provided. When this gate valve 73 is closed,
The processing unit M1 is isolated from the processing space S outside it.
Outside the plating unit M1
The diffusion of dirt into the processing space S on the side is prevented. Also,
Each of the plating units M1 and M2 operates independently and independently.
Each of which can be
It is configured to be removable. Therefore, one plating process
Units can be used alternately, making maintenance easier
I can do it. Next, a plate for plating the surface to be plated of the wafer W is formed.
The key processing system will be described. FIG. 8 shows the present embodiment.
Showing the flow of the entire plating system according to
It is a chart. As shown in FIG.
Set up a plating system and load one lot of wafers W
For example, a carrier cassette C containing 25 sheets is not shown.
It is mounted on the mounting table 21 by the transfer robot. Carrier
When the set C is placed, the sub arm 22 is
Move to the position before set C, and place the key
The wafer holding member 23 is inserted into the carrier cassette C.
An unprocessed wafer W is taken out of the carrier cassette C.
Further, as the sub arm 22 rotates, the wafer W is held.
The held wafer holding member 23 extends, and passes through the opening G1.
Then, the wafer W is placed on the relay mounting table 37 in the first processing chamber.
Place it once. The wafer W is mounted on the relay mounting table 37
Then, the wafer holding member 36 of the main arm 35 extends.
And receives the unprocessed wafer W on the relay mounting table 37. Unprocessed
The main arm 35 receives the wafer W
W is turned upside down and rotated, and the wafer holding unit is rotated.
The material 36 elongates and enters, for example, the plating unit M1.
Eha W is carried in (step 1). Hereafter, plating
About the flow of the plating process (step 2) of the knit M1
9 and FIGS. 10 to 13. Figure 9 is a book
Plating performed by the plating unit according to the embodiment
10 is a flowchart showing a processing flow, and FIGS.
FIG. 13 schematically illustrates each step of the plating process according to the present embodiment.
FIG. 3 is a vertical sectional view schematically shown. From the relay mounting table 37
The main arm 35 that has received the W moves the wafer W up and down.
The plating process unit M1 is accessed after being reversed. Immediately
A gate bar provided on the side wall of the plating unit M1;
The lube 73 is opened and the unprocessed wafer W is held.
The wafer holding member 36 expands as shown in FIG.
At the transfer position (I) from the wafer holding unit 36
Surface of the wafer W on the holding portion 62 of the driver 61
The wafer so that it is placed almost horizontally on the surface of the plating solution.
Deliver C (Step 2 (1a)). Wafer holder
Material 36 delivers wafer W to holding portion 62 of driver 61
After that, the wafer holding member 36 contracts and the gate valve 7
Close 3. At this time, the inner tank 42 of the plating solution tank 42
The inside of a is filled with the plating solution. Gate valve 7
3 is closed, and the driver 61 drives the cylinder 69 as shown in FIG.
As shown in FIG. 10 (b), it descends to the plating position (IV).
Dipping the surface to be plated of the wafer W into a plating solution (step
Step 2 (2a)). Here, the surface of the wafer W to be plated is
When the wafer W comes into contact with the liquid surface,
Air enters between the liquid and the liquid surface.
To form a uniform plating layer on the surface of the
It is necessary to defoam the air bubbles that have arrived. So, Ue
(C) The plating surface of W is in contact with the plating liquid surface
Then, the driver 61 drives the cylinder 67, as shown in FIG.
As shown, a position eccentric from the center of the plating solution tank 42
It moves substantially horizontally to (V) (step 2 (3a)). This
The holding unit 62 holding the wafer W in the state of FIG.
When the motor 63 is driven, as shown in FIG.
The air rotating on the surface and adhering to the surface to be plated of the wafer W
Air bubbles are removed from the surface to be plated (Step 2 (4)
a)). Here, the rotation speed when rotating the wafer W,
In addition, the first rotation speed R1 is for removing bubbles adhering to the lower surface side of the wafer W.
The rotation speed is easy to remove.
A rotary shaft substantially fixed at the center of the processing liquid tank 42 above the liquid tank
Rotation, not vortex created by rotation of plating solution around
The rotational speed is such that turbulence with an unfixed shaft occurs.
Specific numerical values are so-called design items and are uniquely specified
Although the first rotation speed R1 cannot be
If 100 to 300 r. p. m is a preferred range.
I can do it. Here, a preferable range of the first rotation speed R1
Is set to the above range.
Because it has the adverse effect of not
If the above range is exceeded, the plating solution will be agitated too much and eddy will occur.
The current concentration, which is the value of the current flowing through the plating solution, is uneven.
And the plating solution scatters on the housing 41
This is because there is an adverse effect of doing so. Defoaming is enough
Then, the surface to be plated of the wafer W comes into contact with the surface of the plating solution.
When the driver 61 drives the cylinder 67 in the state of being touched,
As shown in FIG. 1 (a), it is located again in the center of the plating solution tank 42.
Move to plating position (IV) (Step 2 (5)
a)). Driver 61 has moved to plating position (IV)
After that, the holding unit 62 is driven by the motor 63 as shown in FIG.
Rotate in a substantially horizontal plane as shown in FIG.
A voltage is applied between the contact W and the wafer W in contact therewith.
Is applied to open a plating layer on the surface to be plated of the wafer W.
The process starts (step 2 (6a)). Here, when plating,
The rotation speed when rotating the Eha W, that is, the second rotation speed
R2 removes bubbles generated on the lower surface side of the wafer W during plating.
Easy rotation speed and circulation of plating solution
In order to form a uniform plating layer on the lower surface of the wafer W,
Rolling speed. Specific figures are so-called design items.
Although it cannot be uniquely specified, the second rotation speed
The degree R2 is, for example, 10 to 200 r. p. m is preferred
Range. Here, the second rotation speed R2
The reason why the preferable range is set to the above range is lower than the above range.
Adversely affects the in-plane uniformity.
Conversely, if it exceeds the above range, the plating solution will be stirred too much.
And eddy currents occur, resulting in uneven current density of the plating solution
This is because such an adverse effect occurs. Plated surface of wafer W
After a plating layer having a sufficient thickness is formed, as shown in FIG.
Stop applying voltage as shown, and finish forming plating layer
(Step 2 (7a)). Next, a predetermined amount of plating solution
When the pump 51 is operated and the valve 52 is opened, the plating solution tank
From 42, it is returned to the tank 50, as shown in FIG.
The level of the plating solution in the plating solution tank 42 drops during
Step 2 (8a)). At the same time, raise the driver 61
To the spin dry position (III), and at this height
The holding unit 62 is driven by a motor 63 as shown in FIG.
The wafer W is rotated in a substantially horizontal plane and spin-dried.
Removes excess plating solution adhering to the plating surface of the
(Step 2 (9a)). Spin dry enough
After that, the driver 61 drives the cylinder 69 to
As shown in (b), it is raised to the cleaning position (II) (step
Step 2 (10a)). At the cleaning position (II), the holding unit 62
The motor 63 rotates as shown in FIG.
And the cleaning nozzle 7 built in the separator 72
0 to pure water is sprayed toward the plating layer forming surface of the wafer W.
To clean the plating layer forming surface of the wafer W (step
Step 2 (11a)). Cleaning of the plating layer forming surface of wafer W
After the completion, the driver 61 is maintained at the cleaning position (II).
For example, a lifter (not shown) that raises and lowers the wafer W
The wafer W is slightly raised. In this state, the holding section 62
Is driven by the motor 63 to rotate as shown in FIG.
And the cleaning nozzle 70 built in the separator 73
Pure water is sprayed toward the convex contact 64 of the holding portion 61 from the
The convex contact 64 is washed by being irradiated (step 2).
(12a)). Cleaning of the convex contact 64 has been completed.
Thereafter, the wafer W is lowered and held by a lifter (not shown).
It is placed on the section 62. In this state, the driver 61
As shown in FIG.
It descends to the position (III) (Step 2 (13
a)). Further, when the holding unit 62 is driven by the motor 63, FIG.
Spin dry as shown in (b) and wash
To remove the moisture adhering to the convex contact 64
Excluded (step 2 (14a)). Then, the driver 61
Is driven by driving the cylinder 69, as shown in FIG.
It rises to the position (I) (step 2 (15a)). This
The gate valve 73 is opened in the state of
The e-ha holding member 36 is extended to hold the c
After receiving Eha W, the plating process is performed as shown in FIG.
The wafer W that has been processed in the processing unit M1 is unloaded.
(Step 2 (16a)). Plating unit M1
Is completed, the wafer is held by the wafer holding member 36.
Wafer W contains a plating solution with a different composition if necessary
Transported to the other plating units M2 to M4
Then, another plating process is performed. Similar composition one after another
Plating unit M2 containing different plating solutions
~ M4, the wafer W is transferred and the plating process is performed.
You. After a series of plating processes is completed, the main arm 35
The wafer holding member 36 holding the wafer W
The wafer W is transferred into the cleaning processing unit 100,
(Step 3). By the cleaning unit 100
After the cleaning process is completed, the subsequent processes, for example, annealing
Perform ring processing. This annealing process is called
The process is carried out by placing the wafer W on the hot plate for a predetermined time (step
4). When annealing is completed, the main arm 3
5 receives the processed wafer W, and
Hand over Eha W (step 5). Then the sub arm
22 is a wafer that has been processed by extending the wafer holding member 23.
W is returned into the carrier cassette C. Thus, this implementation
In the plating unit M1 of the embodiment, the plating solution tank 42
The wafer W at a position (V) eccentric from the center of the wafer
Therefore, there is a gap between the surface to be plated of the wafer W and the surface of the plating solution.
It is possible to reliably remove the bubbles of the sneaking air. That is,
When the holding part 62 is rotated at the center of the plating solution tank 42 and
Similarly, with the rotation of the holding portion 62,
The rotation of the plating solution also occurs, but from the center of the plating solution tank 42.
When the holding part 62 is rotated at the eccentric position (V)
Is that even if the plating solution rotates, the rotation of the plating solution becomes laminar.
Vortex does not occur at the center of rotation of the holding portion 62.
You. As a result, bubbles collect at the center of the surface of the wafer W to be plated.
The outside of the wafer W due to the rotation of the wafer W
Bubbles move in the direction of the
Can be removed. Also, the wafer W and the electrode 44
Apply a voltage between them to form a plating layer, so apply a voltage
In the process of removing bubbles, the surface of the wafer W to be plated is
No key layer is formed. That is, bubbles are formed on the wafer W.
Plating on the surface to be plated of wafer W while adhering to the plating surface
Since a layer is not formed, a more uniform plating layer can be formed.
Can be. Further, washing with the plating units M1 to M4
Plating processing because the purification processing units 100 are arranged in multiple stages
Keeping the system footprint small
it can. (Second Embodiment) Hereinafter, a second embodiment of the present invention will be described.
Will be described. In the following, this embodiment and subsequent
Some of the features of the
Explanation is omitted. In this embodiment, a plating layer is formed.
Do not supply a plating solution with a larger flow rate than the plating process
The structure was such that a bubble removing step of removing bubbles was performed. Squirt pipe 4
A control (not shown) for the pump 49 for supplying the plating solution to
The device is connected. This control device includes a pump 49
A program for controlling the operation is input, and the pump 4
9 by controlling the operation of
The flow rate of the plating solution is adjusted. here
Therefore, the flow rate of the plating solution in the plating process is determined in advance by experiments, etc.
Is set to a flow rate suitable for forming a plated layer
The flow rate of the plating solution in the punching process is
Formed between the plating surface of Eha W and the plating solution level
In order to expel the bubbles that have formed toward the outer peripheral edge of the wafer W, a plating process
The flow rate is set to be larger than the flow rate in the step. Less than,
About the plating process flow in the plating unit
This will be described with reference to FIGS. FIG. 14 shows the embodiment.
Processing performed by the plating unit M1 according to the embodiment
15 is a flowchart showing the flow of FIG.
A vertical diagram schematically showing the state of the bubble removing step according to the embodiment.
FIG. 16 is a sectional view, and FIG. 16 is a plating step according to the present embodiment.
FIG. 17 is a vertical sectional view schematically showing the state of FIG.
Timing chart of a plating process according to the embodiment
It is. Plating unit similar to the first embodiment
An unprocessed wafer W is loaded into M1, and the wafer W is held.
Driver 61 is eccentric from the center of plating solution tank 42
Move to position (IV) (step 2 (1b)-step
Step 2 (3b)). After that, the holding unit 62 of the driver 61
While rotating, the control device controls the operation of the pump 49.
As shown in FIG. 15, the plating solution having the flow rate Q1 is applied to the plating solution tank 4.
2 and defoaming is performed. That is, as shown in FIG.
The plating solution of the flow rate Q1 is bubble removed from the bubble removal start time t0.
Until the end time t1 is reached.
(Step 2 (4b)). Here, the value of the flow rate Q1 is
C. Effectively removes bubbles adhering to the lower surface of the wafer W when the W is landed.
This is the flow rate that can be removed. The specific value of Q1 is a so-called
It is a matter of measurement and cannot be uniquely identified.
The value of the amount Q1 is preferably, for example, 5.0 to 30 l / min.
It is listed as a preferable range. Here, Q1 is preferable.
The range is set to the above range.
This is because the adverse effect that bubbles cannot be removed occurs.
On the other hand, if it exceeds the above range, the current density will decrease.
This is because harm will occur. After the bubble removal, the driver 61
A plating position (I) coaxial with the center of the plating solution tank 42
V) (Step 2 (5b)). Then hold
When the unit 62 rotates and voltage is applied, the control device
The operation of the pump 49 is controlled, and as shown in FIG.
The plating solution with the flow rate Q2 smaller than that supplied to the plating solution tank 42
Then, the formation of the plating layer is started (Step 2 (6)
b)). Here, the value of the flow rate Q2 is below the wafer W during plating.
The flow rate can effectively remove bubbles generated on the surface side.
Then, the plating solution is circulated so that a uniform
The flow rate is such that a layer is formed. Specific numbers yes
This is a design item and cannot be uniquely identified.
However, the flow rate Q2 is, for example, 1.0 to 10 l / min.
Is a preferred range. Here, the flow rate Q2
The reason why the preferable range is set to the above range is lower than the above range.
Adversely affects the in-plane uniformity.
Conversely, above the above range, the reproducibility and stability are low.
This is because there is an adverse effect of dropping. As shown in FIG.
As described above, the plating solution having the flow rate Q2 is changed to the plating layer formation start time t2.
Until the plating layer formation end time t3.
2 and a plating layer is formed on the surface of the wafer W to be plated.
It is. The plating layer is sufficiently formed on the surface to be plated of the wafer W.
After the voltage is applied, the application of the voltage is stopped to complete the formation of the plating layer.
(Step 2 (7b)). Then, the first embodiment
A predetermined process is performed in the same manner as
(Step 2 (8)
b) to Step 2 (16b)). As described above, the present embodiment
In the plating unit M1 according to the embodiment, the control device
The operation of the pump 49 is controlled so that the flow rate is larger than the plating process.
Bubbles are plated as the bubble removal process is performed while supplying the liquid
The ejection of the liquid facilitates movement toward the outer peripheral edge of the wafer W.
It can remove bubbles efficiently. (Third Embodiment) Hereinafter, a third embodiment of the present invention.
Will be described. In this embodiment, the plating process is
A configuration in which the bubble removal process is performed by increasing the rotation speed of the wafer W
Was. A control device (not shown) for the motor 63 of the driver 61
Is connected. This control device has a motor 63
Program for controlling the motor 63
Adjusting the rotation speed of the wafer W by controlling the driving
It has become so. Here, the wafer W in the plating process
Rotation speed forms a plating layer that has been grasped in advance through experiments, etc.
The rotation speed is set to a value suitable for
The rotation speed of W is determined by the rotation of wafer W.
The bubbles formed between the plate surface and the liquid surface of the plating solution
Speed in the plating process to drive out the outer periphery
Is set higher. Below, plating unit
FIGS. 18 to 21 show the flow of the plating process in M1.
It is explained along. FIG. 18 shows the plating according to the present embodiment.
4 shows a flow of a plating process performed in the processing unit M1.
FIG. 19 is a flowchart according to the present embodiment.
It is a vertical cross-sectional view schematically showing the state of the defoaming step,
FIG. 20 schematically shows the state of the plating step according to the present embodiment.
FIG. 21 is a vertical sectional view shown in FIG.
5 is a timing chart of a plating process. First
Unprocessed in the plating unit M1 as in the embodiment.
Is loaded, and the driver 6 holding the wafer W
1 moves to a position (V) eccentric from the center of the plating solution tank 42.
(Step 2 (1c) to Step 2 (3c)).
Thereafter, the control device controls the driving of the motor 63 of the driver 61.
By controlling the holding unit 62 of the driver 61 as shown in FIG.
Is rotated at a rotation speed v1 to remove bubbles. That is,
As shown in FIG. 21, the wafer W held by the holder 63 is
Round from bubble removal start time t0 to bubble removal end time t1
It rotates at the rotation speed v1 (step 2 (4c)). Defoamer
After completion, the driver 61 is coaxial with the center of the plating solution tank 42.
To the plating position (IV) at step 2 (5
c)). Thereafter, the control device controls the operation of the motor 63.
As shown in FIG. 20, the holding unit 62 is controlled to the rotation speed v1.
Plating by applying a voltage while rotating at a lower rotation speed v2
The formation of the layer is started (step 2 (6c)). FIG.
The wafer W held by the holding section 62 is plated as shown in FIG.
From the start of the formation of the layer t2 to the end of the formation of the plating layer t3
Rotating at the rotation speed v2 until the surface to be plated of the wafer W
A plating layer is formed. Sufficiently plated surface of wafer W
After the plating layer is formed on the
The formation of the key layer is completed (step 2 (7c)). That
Thereafter, predetermined processing is performed in the same manner as in the first embodiment, and the processing is performed.
The processed wafer W is unloaded from the plating unit M1.
(Step 2 (8c) to Step 2 (16c)).
Thus, the plating unit M according to the present embodiment
In 1, the controller controls the driving of the motor 63 and
The bubble removal process by increasing the rotation speed of the wafer W
Bubbles move toward the outer peripheral edge of the wafer W by the rotation of the wafer W.
Easier and more efficient defoaming. (Fourth Embodiment) Hereinafter, a fourth embodiment of the present invention.
Will be described. In the present embodiment, the bubble removing step or the
The configuration is such that the sticking step is performed twice or more. That is, the form of the present embodiment
The plating unit M1 is in a state in which the wafer W
Formed between the surface to be plated and the surface of the plating solution
Bubbles such as hydrogen and oxygen generated by electrolysis of plating solution
Plating process is interrupted when wafer adheres to the surface to be plated of wafer W
Driver 61 on the center axis of the plating bath 42.
Eccentric from the center of the plating solution tank 42 from the pin position (IV)
Moved to the position (V),
The driver 61 is moved to the plating position (IV)
It is configured to start a plating process. Below,
About the plating process flow in the
27 will be described with reference to FIGS. FIG. 27 shows the present embodiment.
Plating process performed in the plating unit M1 according to the embodiment
FIG. 23 is a flowchart showing the flow of
(A) to (c) show the plating process steps according to the present embodiment.
FIG. 24 is a schematic vertical cross-sectional view, and FIG.
6 is a timing chart of a plating process according to an embodiment.
As in the first embodiment, the plating unit M1
An unprocessed wafer W is loaded, and a
Position where eva 61 is eccentric from the center of plating solution tank 42
(V) and the wafer W rotates to remove bubbles.
(Step 2 (1d) to Step 2 (4d)).
After the defoaming is completed, the driver 61 moves to the center of the plating solution tank 42.
Move to the plating position (IV) on the same axis and
The wafer W is rotated and a voltage is applied to the surface of the wafer W to be plated.
The formation of the plating layer is started (step 2 (5d)-).
Step 2 (6d)). In the plating process, it starts in the plating process
The generated bubbles may adhere to the surface of the wafer W to be plated.
You. As a result, the bubbles are removed as shown in FIG.
C adheres to the surface to be plated of W (Step 2 (7d))
Stop applying the voltage to interrupt the formation of the plating layer
Step 2 (8d)). Then, by driving the cylinder 67,
As shown in FIG. 23 (b), the driver 61 is again brought into the plating solution tank.
Position eccentric from the center of plating solution tank 42 from the center of 42
Move to (V) and rotate to remove bubbles again.
Step 2 (9d)). After defoaming, drive the cylinder 67
As shown in FIG. 23 (c), the driver 61
Move to plating position (IV) on the central axis of liquid tank 42
And rotate, and the voltage is applied to the wafer W again.
The formation of a plating layer on the plating surface is started (Step 2)
(10d)). That is, as shown in FIG.
From the plating layer formation start time t0 to the plating surface of the wafer W
During plating layer formation where bubbles adhere and interrupt plating layer formation
The wafer W is at the plating position (IV) until the cutting time t1.
From bubble removal start time t2 to remove bubbles from the surface to be plated
Until the bubble removal end time t3, the center of the plating solution tank 42 is shifted from the center.
At the centered position (V) and again on the surface to be plated of the wafer W
At the plating layer formation start time t4 when the formation of the plating layer is started
Is at the plating position (IV). If the wafer W
After the plating layer is formed on the
The formation of the plating layer is completed (step 2 (11d)).
After that, predetermined processing is performed in the same manner as in the first embodiment.
And the processed wafer W is transferred from the plating unit M1.
It is carried out (Step 2 (12d) to Step 2 (20
d)). Thus, the plating unit according to the present embodiment is
In the knit M1, bubbles generated during the plating process cause the wafer W
Of the plating solution tank 42 even if it adheres to the surface to be plated
Bubble is removed at the position (V) eccentric from the
A plating layer can be formed on the surface to be plated of CW. (Fifth Embodiment) Hereinafter, a fifth embodiment of the present invention will be described.
Will be described. In the present embodiment, the plating solution tank 42
At the position (V) eccentric from the center of the
A plurality of ivas 61 are provided. FIG. 25 shows the present embodiment.
FIG. 4 is a schematic perspective view of a plating unit M1 according to the embodiment.
FIG. 26 is a schematic plan view of the plating unit M1.
is there. As shown in FIG. 25 and FIG.
Immediately above 2 is a position eccentric from the center of the plating solution tank 42
In (V), a plurality of drivers 61, for example, four drivers 61 are provided.
I have. Each driver 61 includes a holding unit 62 that holds the wafer W.
And a motor 63 that rotates the holder 62 together.
I have. Each driver 61 has a cylinder (not shown).
Guides (not shown) for each driver 61
It is designed to move up and down along the drain. here
Therefore, in the present embodiment, the stop when each driver 61 moves up and down is stopped.
Transport position (VI), cleaning position (VII) and stop position.
And the plating position (VIII) from the center of the plating tank 42
It is assumed that it is on the axis of the eccentric position (IV). plating
In the inner tank 42a of the liquid tank 42, each driver 61 is opposed.
An electrode 44 as an anode is provided at each position.
I have. Also, a plating solution is jetted to the center of the inner tank 42a.
An ejection tube 43 penetrates, and an electrode 44 takes
Surrounding. Hereinafter, processing in the plating unit M1
27 and FIGS. 28 (a) to 28 (d)
It is explained along. FIG. 27 shows a plating process according to the present embodiment.
The flow of the plating process performed in the processing unit M1 was shown.
FIG. 28 is a flowchart, and FIGS.
Vertical section schematically showing the plating process according to the embodiment of FIG.
FIG. The main arm 35 holding the wafer W is
The holding member 36 is extended, as shown in FIG.
Holder of each of four drivers 61 at transport position (VI)
Wafers W are placed one by one (Step 2 (1)
e)). After that, each holding unit 61 is driven by the motor 63.
Eccentricity from the center of the plating solution tank 42 as shown in FIG.
Down to the plating position (VIII) at the position (IV)
To bring the surface to be plated of each wafer W into contact with the surface of the plating solution
(Step 2 (2e)). Each driver 61
Each holding unit 62 stops at the key position (VIII).
Is driven by the motor 63 to rotate as shown in FIG.
To remove air bubbles adhering to the surface to be plated of the wafer W
(Step 2 (3e)). The foam is well removed
After that, each driver 61 stops at the plating position (VIII)
In this state, each holding unit 62 is driven by the motor 63 and FIG.
As shown in FIG.
To start forming a plating layer on the surface to be plated of the wafer W
(Step 2 (4e)). Make sure that the surface to be plated of each wafer W
After forming an adequately thick plating layer, stop applying voltage.
Thus, the formation of the plating layer is completed (step 2 (5e)).
Thereafter, similar to the first embodiment, each wafer W is
A fixed process is performed, and each processed wafer W is plated.
It is carried out of the unit M1. (Step 2 (6e)-
Step 2 (14e)). Thus, in the present embodiment,
In the plating unit M1, the driver 61 is turned on.
Pre-arranged at a position (V) eccentric from the center of the liquid tank 42
Therefore, in addition to being able to remove bubbles more efficiently, the driver 6
1 to process a plurality of wafers W at a time.
Thus, a specific effect that the processing speed is improved can be obtained. (Sixth Embodiment) Hereinafter, a sixth embodiment of the present invention will be described.
Will be described. In the present embodiment, during the defoaming step,
While rotating the wafer W, the center of the plating solution tank 42 is
It was configured to revolve around a shaft. FIG. 29 relates to the present embodiment.
FIG. 3 is a schematic perspective view of a plating unit M1. FIG.
As shown in the figure, the outer container of the motor 63 of the driver 61
An L-shaped support member 81 is attached. This support
The member 81 is composed of a telescopic arm 82 and a shaft support 83.
It is plated by the expansion and contraction of this arm 82
A position eccentric from the center of the liquid bath 42 and the center of the plating bath 42
(V) so that the driver 61 moves substantially horizontally.
It has become. A plating solution tank is provided at the upper end of the shaft support 83.
A motor (not shown) arranged on the central axis of 42 is attached.
Have been killed. Plating by driving this motor
The driver 61 rotates in a substantially horizontal plane around the center of the liquid tank 42
It is supposed to. Hereinafter, the plating unit M1
30 and 31 for the flow of the plating process in the inside
It is explained along. FIG. 30 shows plating according to the present embodiment.
4 shows a flow of a plating process performed in the processing unit M1.
FIG. 31 is a flowchart according to the present embodiment.
It is the top view which showed the bubble removal process typically. First implementation
In the same manner as in the above embodiment, the unprocessed
Eha W is carried in, and driver 61 holding wafer W is
Move to a position (V) eccentric from the center of the plating solution tank 42
(Step 2 (1f) to Step 2 (3f)). That
Thereafter, as shown in FIG.
When the wafer W rotates, the motor 63 (not shown) rotates.
The wafer W revolves to remove bubbles (step
Step 2 (4f)). After bubble removal, driver 61 plating
Move to plating position (IV) which is coaxial with the center of liquid tank 42
The wafer W is rotated and the surface of the wafer W to be plated is
A key layer is formed (Step 2 (5f) to Step 2)
(7f)). After that, as in the first embodiment, the predetermined
Processing is performed, and the processed wafer W is
(Step 2 (8f)-Step)
2 (16f)). Thus, the message according to the present embodiment is
In the processing unit M1, the wafer W is rotated.
The bubble is removed by revolving around the periphery of the wafer W.
It is easier to move in the direction, and it is possible to remove bubbles more efficiently
A unique effect is obtained. In addition, the present invention provides
It is not limited to the description of the sixth embodiment,
The structure, material and arrangement of each member deviate from the gist of the present invention.
It can be changed as appropriate within the range that does not exist. For example, the first to the first
In the sixth embodiment, the wafer W and the inner tank 42a are
Plating on the wafer W by applying a voltage between the
A plating layer is formed on the surface, but no electrode 44 is provided.
In other words, copper sulfate was dissolved without applying voltage
The wafer W is placed on the surface of the plating solution having a strong basic reducing action.
The surface to be plated is brought into contact with the wafer W by a reductive deposition reaction.
It is also possible to form a plating layer on the surface to be plated.
In the first to sixth embodiments, one surface of the wafer W is used.
The plating process is applied only to the
A processing tank is provided, and processing is performed while reversing
Different treatments may be applied to the front and back surfaces of W
it can. In the first to sixth embodiments, the plating is performed.
Although the processing unit is arranged on the lower side,
If it is a processing unit that performs
It goes without saying that processing units other than
No. In the first to sixth embodiments, the processing target
LCD glass for liquid crystal using wafer W as plate
It is also possible to use a substrate. In addition, the second
In the fourth or sixth embodiment, a plating unit
One driver 61 is provided in M1.
As in the embodiment, the dry processing is performed in the plating unit M1.
It is also possible to arrange a plurality of buses 61.

According to the present invention, when the surface to be processed of the substrate to be processed is brought into contact with the processing solution, bubbles formed between the processing solution and the surface to be processed of the substrate are removed from the center of the processing solution tank. Since the bubble is removed at a position eccentric from, the turbulence is formed on the upper portion of the processing liquid without scattering on the shaft portion of the processing tank, and the bubbles are scattered, so that the bubbles can be reliably removed.

[Brief description of the drawings]

FIG. 1 is a perspective view of a plating system according to a first embodiment.

FIG. 2 is a plan view of the plating system according to the first embodiment.

FIG. 3 is a side view of the plating system according to the first embodiment.

FIG. 4 is a front view of the plating system according to the first embodiment.

FIG. 5 is a schematic perspective view of a plating unit according to the first embodiment.

FIG. 6 is a schematic vertical sectional view including a partially enlarged view of the plating unit according to the first embodiment.

FIG. 7 is a schematic plan view of a plating unit according to the first embodiment.

FIG. 8 is a flowchart showing a flow of the entire plating system according to the first embodiment.

FIG. 9 is a flowchart illustrating a flow of a plating process performed by the plating unit according to the first embodiment.

FIG. 10 is a diagram schematically showing each step of a plating process according to the first embodiment.

FIG. 11 is a diagram schematically showing each step of a plating process according to the first embodiment.

FIG. 12 is a view schematically showing each step of a plating process according to the first embodiment.

FIG. 13 is a diagram schematically showing each step of a plating process according to the first embodiment.

FIG. 14 is a flowchart illustrating a flow of a plating process performed by a plating unit according to a second embodiment.

FIG. 15 is a vertical sectional view schematically showing a state of a bubble removing step according to the second embodiment.

FIG. 16 is a vertical sectional view schematically showing a state of a plating step according to a second embodiment.

FIG. 17 is a timing chart of a plating process according to the second embodiment.

FIG. 18 is a flowchart illustrating a flow of a plating process performed by a plating unit according to a third embodiment.

FIG. 19 is a vertical cross-sectional view schematically showing a state of a bubble removing step according to the third embodiment.

FIG. 20 is a vertical sectional view schematically showing a state of a plating step according to a third embodiment.

FIG. 21 is a timing chart of a plating process according to a third embodiment.

FIG. 22 is a flowchart illustrating a flow of a plating process performed by a plating unit according to a fourth embodiment.

FIG. 23 is a vertical cross-sectional view schematically showing a plating step according to a fourth embodiment.

FIG. 24 is a timing chart of a plating process according to a fourth embodiment.

FIG. 25 is a schematic perspective view of a plating unit according to a fifth embodiment.

FIG. 26 is a schematic plan view of a plating unit according to a fifth embodiment.

FIG. 27 is a flowchart illustrating a flow of a plating process performed by a plating unit according to a fifth embodiment.

FIG. 28 is a vertical sectional view schematically showing a plating step according to a fifth embodiment.

FIG. 29 is a schematic perspective view of a plating unit according to a sixth embodiment.

FIG. 30 is a flowchart showing a flow of a plating process performed by a plating unit according to a sixth embodiment.

FIG. 31 is a plan view schematically showing a bubble removing step according to a sixth embodiment.

FIG. 32 is a schematic perspective view of a conventional plating apparatus.

[Explanation of symbols]

 W: Wafer (substrate to be processed) S: Processing space M1 to M4: Plating unit (first liquid processing unit) 35: Main arm (first transfer means) 42: Plating liquid tank 43: Spout tube 44: Electrode 61 driver 62 holding part 63 motor 64 convex contact 67, 69 cylinder 100 cleaning unit (second liquid processing unit)

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/288 H01L 21/288 EF term (Reference) 4K024 AA09 AB01 BA11 BB12 BC06 CA15 CA16 CB13 CB26 DB10 GA16 4M104 DD52 HH20

Claims (9)

[Claims] 1. A processing tank configured to enable a predetermined electrolytic plating process on a substrate to be processed and to store a plating solution, and to be in contact with the substrate to be processed. A plating method using a plating apparatus comprising: a cathode electrode; and an anode electrode disposed in the processing tank. Rotating the substrate to be processed at a first rotation speed in a state where the surface to be processed of the substrate to be processed is in contact with the substrate to be processed and at a position eccentric from the central axis of the processing bath; Performing a plating process on the surface to be processed of the substrate to be processed. 2. A processing tank configured to be capable of performing a predetermined electrolytic plating process on a substrate to be processed and storing a plating solution, and being configured to be in contact with the substrate to be processed. A plating method using a plating apparatus comprising: a cathode electrode; and an anode electrode disposed in the processing tank, wherein a plating process is performed on the surface of the processing solution contained in the processing tank. Rotating the substrate to be processed at a first rotation speed in a state where the surface to be processed of the substrate to be processed is in contact with the substrate to be processed and at a position eccentric from the central axis of the processing bath; Performing a plating process on the surface of the substrate to be processed at a position where the substrate to be processed is substantially coaxial with the central axis of the anode electrode. 3. The plating method according to claim 1, wherein the step of performing the plating is a step of rotating the substrate to be processed at a second rotation speed. Processing method. 4. The plating method according to claim 3, wherein the second rotation speed is equal to or smaller than the first rotation speed. 5. The plating method according to claim 1, wherein the plating method is performed on one substrate to be processed. Plating method. 6. The plating method according to claim 1, wherein the plating method is performed on a plurality of substrates to be processed at the same time. The plating method. 7. A processing tank configured to allow a predetermined electrolytic plating process on a substrate to be processed and to store a plating solution, and to be in contact with the substrate to be processed. A cathode electrode, an anode electrode arranged in the processing bath, and the substrate to be processed movably at least to a position on the center axis of the processing bath and a position eccentric from the center axis, and A substrate holding means configured to rotate the substrate to be processed at a position. 8. A processing tank configured to be capable of performing a predetermined electrolytic plating process on a substrate to be processed and storing a plating solution, and configured to be in contact with each of the substrates to be processed. A cathode electrode, an anode electrode disposed in the processing bath, and a substrate holding unit configured to be rotatable at a position eccentric from the center axis of the processing bath. A plating apparatus comprising: a plating apparatus; 9. The plating apparatus according to claim 8, wherein the anode electrodes are arranged in the same number as the plurality of substrates to be processed, and are substantially coaxial with a position eccentric from a center axis of the processing tank. A plating apparatus, which is provided on the upper side.