JP2001230201A - Device and method for heating and cooling and substrate treating apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a heating and cooling apparatus which can make the in-plate temperature distribution and cooling effect of a substrate uniform and, at the same time, can more quickly shift to high-accuracy cooling operation than the conventional device does. SOLUTION: This heating and cooling apparatus 44 is provided with a heating table 62 which heats a wafer W placed on the table 62 to a prescribed temperature, a cooling table 82 which cools the wafer W placed on the table 82 to another prescribed temperature, and a standby table 91 on which the wafer W is made to stand by. The device 44 is also provided with a unit arm 53 which carries the wafer W to/from the tables 62, 82, and 91 and is provided with an exhaust port 95 and an exhaust fan 97 both of which form an air flow A flowing from the cooling table 82 side to the heating table 62 side in the arranging space S of the tables 62, 82, and 91.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heating / cooling processing apparatus and a substrate processing apparatus.

[0002]

2. Description of the Related Art In a semiconductor device manufacturing process, a photolithography process is performed on a surface of a substrate such as a semiconductor wafer (hereinafter, referred to as a "wafer"). In the photolithography process, a series of processes of exposing a predetermined pattern after applying a resist liquid on the surface of the wafer and thereafter performing a development process are performed.

In the coating and developing process, after the above-described resist coating, exposing and developing processes, a process of heating the wafer is performed as necessary, and thereafter, a process of cooling the hot wafer is performed. Will be Further, the coating and developing processing apparatus for performing the coating and developing processing is provided with various processing apparatuses for individually performing each of these processings, and the loading and unloading of wafers to and from each apparatus is performed by a main transfer device having an arm or the like.

[0004] Heat treatment is usually performed in a heat treatment apparatus. As shown in FIG. 6, the heat treatment apparatus 100 includes:
A heating table 101 and a cooling arm 102 are provided. The heating table 101 includes a support pin 10 provided on the upper surface.
The wafers W are placed by 3, 103, and 103, and the wafers W are heated by the heat generated by the heaters 104 built therein. On the other hand, the cooling arm 102 has a substantially rectangular flat plate shape, and is driven by a driving mechanism (not shown).
, And is configured to be able to receive the heated wafer W from the heating table 101. When receiving wafers, cooling arm 1
The cooling arm 102 and each support pin 103 do not contact each other due to the slits 105, 105, and 106 formed in the “02”. A circulation path 107 is formed inside the cooling arm 102. The circulation path 107 is connected to a constant temperature water supply source (not shown), and is configured to circulate, for example, constant temperature water at 23 ° C. Therefore, the cooling arm 102 waits until the heated wafer W is carried out of the apparatus, performs a simple pre-cooling process, and brings a certain temperature drop to the wafer W.

[0005] The cooling processing apparatus is provided with a cooling stand. The cooling table mounts the pre-cooled wafer, performs high-precision cooling processing by a built-in Peltier element, and brings the wafer to a predetermined temperature (for example, 23 ° C.).

[0006]

However, in the conventional heat treatment apparatus 100, when the wafer W is placed on the cooling arm 102, the slits 105, 105, 1
06 is the cooling arm 102
Non-contact. For this reason, the non-contact wafer back surface and the wafer front surface facing this wafer back surface may have a lower temperature drop than other wafer front and back surfaces. Further, the cooling arm 102 is mounted on the wafer W.
Is not sufficiently large, a portion protruding from the cooling arm 102 is generated, and the temperature drop on the front and back surfaces of the protruding wafer is low. Further, the timing of unloading the wafer W from the heat treatment apparatus 100 may be delayed, and the waiting time of the wafer W in the cooling arm 102 may be prolonged. Therefore, the cooling effect of the cooling arm 102 may be different for each wafer W. In the past, non-uniformity of the in-plane temperature distribution and variation of the cooling effect, which were negligible in the past, have room for improvement in order to realize a more accurate manufacturing technology in response to the progress of the miniaturization technology.

In the case of using a chemically amplified resist, post-exposure bake (PEB), which is a heating process after exposure, also quickly shifts to a high-precision cooling process after the pre-cooling process by the cooling arm 102. Therefore, it is necessary to suppress pattern deformation and deterioration of reproducibility due to an acid amplification reaction. However, conventionally, since the heat treatment apparatus 100 and the cooling processing apparatus are separately provided, it takes time to carry out the wafer W from the heat treatment apparatus 100 and carry it into the cooling processing apparatus. Today, as pattern miniaturization progresses, the movement time between apparatuses, which has not been particularly problematic in the past, may cause pattern deformation and deterioration in reproducibility, and there is still room for improvement in this regard.

[0008] The present invention has been made in view of the above points, and can achieve uniform temperature distribution and cooling effect in the surface of a substrate, and can promptly shift to a cooling process with higher precision than before. , A new processing apparatus and a substrate processing apparatus.

In order to solve the above problems, the substrate is heated and
A cooling stage for mounting and heating the substrate, a cooling stage for mounting and cooling the substrate, a standby stage for waiting the substrate, the heating stage, the cooling stage, A transfer mechanism for transferring the substrate to and from the standby table,
There is provided a heating / cooling processing apparatus, comprising: an airflow forming means for forming an airflow in a space where the heating table, the cooling table, and the standby table are arranged.

[0010] In the heating / cooling processing apparatus according to the first aspect, the cooling base has a cooling adjusting body such as a Peltier element inside, for example, and the cooling operation of the cooling adjusting body enables high-accuracy cooling processing. Is configured. According to such a heating / cooling processing apparatus, the substrate is sequentially transferred to the heating table and the cooling table by the transfer mechanism, and the heating and cooling processing is continuously performed. In the cooling process, the substrate is placed on the cooling table, so that the entire substrate can be uniformly cooled.
For this reason, high-precision cooling processing is performed without delay,
Excellent time management for cooling processing. Therefore, the in-plane temperature distribution of the substrates can be made uniform, and the cooling effect of each substrate can be made the same even when a plurality of substrates are subjected to a cooling process. In addition, the shift to the cooling process with high accuracy can be performed more quickly than before, and the deformation of the pattern and the deterioration in reproducibility can be prevented. Therefore, the yield can be improved.

Moreover, a plurality of substrates can be continuously heated and cooled by bringing the substrate to be processed next to a standby table in advance and transferring the substrates one after another to a heating table and a cooling table. Therefore, the throughput can be improved.

It is preferable that the heating / cooling apparatus according to the first aspect of the present invention further includes a heat processing container for accommodating the heating table, as described in the second aspect. Further, as described in the third aspect, it is preferable that a cooling processing container for housing the cooling stand is provided. Then, the thermal effect of the heating stage can be prevented from diffusing to the surroundings by the heat treatment container, and the thermal effect of the heating stage can be prevented from reaching the cooling stage by the cooling treatment container. Therefore, even if the heating table and the cooling table are arranged in the same device, the desired processing can be performed. Claim 4
As described in the above, it is more preferable to provide a heat insulating material for blocking radiant heat of the heating table.

According to a fifth aspect of the present invention, the air flow forming means includes an exhaust port formed on the heating table side, and a space in which the heating table, the cooling table, and the standby table are arranged through the exhaust port. And an exhaust mechanism for exhausting the internal atmosphere. For example, when the exhaust mechanism is an exhaust fan, by operating the exhaust fan, an airflow that flows from the cooling stand to the heating stand can be formed in the space.
Such an airflow can prevent the hot atmosphere generated by the heating table from flowing toward the cooling table. Further, since the airflow flows from the cooling table side to the heating table side, the airflow includes the cool air generated from the cooling table, and when the substrate is transferred from the heating table to the cooling table, the heated substrate can be immediately cooled. .

According to a sixth aspect of the present invention, there is provided an apparatus for processing a substrate, comprising: a heating / cooling apparatus according to the first, second, third, fourth or fifth aspect; And a cooling table is disposed in the heating / cooling processing apparatus on the liquid processing apparatus side, the substrate processing apparatus is provided.

According to the substrate processing apparatus of the sixth aspect,
Since the cooling table is located on the liquid processing unit side in the heating / cooling processing unit, a cooling table is interposed between the liquid processing unit and the heating table. Less than. As a result, predetermined liquid processing can be suitably performed on the substrate. According to a seventh aspect of the present invention, there is provided a method of heating and cooling a substrate, the method including a step of holding the substrate, a step of heating the substrate, and a step of cooling the substrate. Two steps of a step of heating the substrate, and a step of cooling the substrate.
The present invention provides a heating / cooling method characterized in that the above steps are repeated in time. According to the heating / cooling method according to claim 7, two or more steps of the step of holding the substrate, the step of heating the substrate, and the step of cooling the substrate are temporally overlapped. By doing so, the standby of the substrate, the heating step, and the cooling step can be performed in parallel, so that the processing time can be shortened and the throughput can be improved.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings. 1 to 3 show the appearance of a coating and developing apparatus 1 provided with a heating / cooling apparatus according to the present embodiment.
3 shows a front view, and FIG. 3 shows a back view.

As shown in FIG. 1, the coating and developing apparatus 1 carries a cassette C accommodating, for example, 25 wafers W into and out of the coating and developing apparatus 1 from outside, and transfers wafers W to and from the cassette C. Cassette station 2 for loading and unloading wafers, processing station 3 including various single-wafer processing apparatuses for performing predetermined processing on wafers W, processing station 3 and exposure apparatus (not shown)
And an interface unit 4 for receiving and transferring the wafer W between them.

In the cassette station 2, a plurality of cassettes C can be mounted in a row in the X direction (up and down direction in FIG. 1) at predetermined positions on a cassette mounting table 5 serving as a mounting portion. Then, the cassette arrangement direction (X direction) and the wafer arrangement direction (Z
(A vertical direction) is provided movably along a transfer path 8 so that each cassette C can be selectively accessed.

The wafer transfer body 7 is configured to be able to access respect to the alignment device 32 and the extension unit 33 included in the third processing unit group G ₃ in the processing station 3 side as described later.

In the processing station 3, the main part is
A transfer device 13 is provided, and the periphery of the main transfer device 13 is provided.
Comprises a processing unit group in which various processing units are arranged in multiple stages
are doing. In the coating and developing processing apparatus 1, four processes are performed.
Device group G₁, G₂, G₃, G ₄Are arranged, and the first
And second processing unit group G₁, G₂Is a coating and developing apparatus 1
And a third processing unit group G₃Is a cassette
And a fourth processing unit disposed adjacent to the
Group G₄Is located adjacent to the interface unit 4
I have. Fifth processing optionally indicated by a broken line
Device group G₅Can be separately arranged on the back side.

[0021] In the first processing unit group G ₁ as shown in FIG. 2, two spinner-type liquid processing apparatus, for example, the wafer W
A resist coating device 15 for applying a resist solution to the wafer W for processing and a developing device 16 for supplying a developer to the wafer W for processing are arranged in two stages from the bottom. Similarly, for the second processing unit group G _2, the resist coating unit 17
And the development processing device 18 are stacked in two stages in order from the bottom.

[0022] In the third processing unit group G _3, for example, as shown in FIG. 3, an adhesion unit 31 for enhancing adhesion between the cooling unit 30, a resist solution and the wafer W for cooling the wafer W, An alignment device 32 for positioning the wafer W, an extension device 33 for holding the wafer W on standby, and heating / cooling processing devices 34, 35, 36, and 37 according to the embodiment of the present invention are stacked in, for example, eight stages from the bottom. Have been.

[0023] In the fourth processing unit group _{G 4,} for example, a cooling unit 40, an extension and cooling unit 41 to cool the wafer W mounted thereon, an extension unit 42, a cooling unit 43, heat and cooling processing unit 4
4, 45, 46, 47, etc. are stacked in, for example, eight stages from the bottom.

A wafer carrier 50 is provided at the center of the interface section 4. This wafer carrier 50
Is extension included in the fourth processing unit group G ₄
The cooling device 41, the extension device 42, the peripheral exposure device 51, and an exposure device (not shown) can be accessed.

Heating / cooling processing units 34-37, 44-4
7, various settings can be made according to the processing purpose. For example, the heating / cooling devices 34 and 35 perform prebaking (PREBAKE) as a heating process after resist application and a subsequent cooling process.
Reference numerals 4 and 45 denote post-exposure bake (PEB), which is a heating process after the exposure process, and a subsequent cooling process, and heating and cooling devices 36, 37, 46, and 47.
Is post-baking (POB) which is a heating process after the development process.
EBAKE) and the subsequent cooling process. Here, heating / cooling processing devices 34 to 37, 44 to 4
7 have the same configuration, and therefore, the heating / cooling processing device 44 will be described as an example.

As shown in FIGS. 4 and 5, a heating section 50 for heating the wafer W and a cooling section 5 for cooling the wafer W are provided in a casing 44a of the heating / cooling apparatus 44.
1, a standby unit 52 for holding the wafer W, a unit arm 53 for transferring the wafer W, and an airflow forming unit 54 for forming an airflow A. The standby unit 52 is disposed above the cooling unit 51, and a loading port 55 for loading the wafer W is formed in a side surface of the casing 44 a on the front side (the lower side in FIG. 4) of the standby unit 52. An unloading port (not shown) for unloading the wafer W is formed on the side surface of the casing 44a on the front side.

The heating section 50 has a heat treatment container 60. A heat treatment chamber 61 for performing a heat treatment of the wafer W is formed in a heat treatment container 60, and a heating table 62 is provided. The heating table 62 is configured to place the wafer W thereon and heat the wafer W to a predetermined temperature.

The heat treatment container 60 has a heat cover 63 located on the upper side and capable of moving up and down, and a heating table housing 64. The heat cover 63 has a substantially conical shape that gradually increases toward the center, and an exhaust pipe 65 is connected to the top. Therefore, the atmosphere in the heat treatment chamber 61 is uniformly exhausted from the exhaust pipe 65. Further, the heat cover 63 covers the heating table 62 and prevents the heat atmosphere from diffusing to the surroundings.

The heating table storage section 64 has a substantially cylindrical case 6.
6 and a support ring 67 for holding the heating table 62. The support ring 67 is made of a material having good heat insulation properties, and blocks radiant heat generated by the heating table 62. Further, a blowout port 67 a is provided in the support ring 67 so that, for example, nitrogen gas (N ₂ gas) or the like can be blown into the heat treatment chamber 61 as an inert gas.

The plane shape of the heating table 62 is, for example, circular. A heater 70 is built in the heating table 62, and three through holes 71 are provided.
Elevating pins 72 that support the back surface of the wafer W are inserted into the through holes 71, respectively. These three lifting pins 72 are moved up and down by a lifting mechanism 73. Therefore, the wafer W supported by the elevating pins 72 is moved to the heat treatment chamber 6.
Within 1, it can be moved up and down between a heating position indicated by a solid line W and a transfer position indicated by a two-dot chain line W ′.

The cooling section 51 has a cooling processing container 80. In the cooling processing container 80, a cooling processing chamber 81 in which the cooling processing of the wafer W is performed is formed, and a cooling table 82 is installed. The cooling table 82 is configured to place the wafer W thereon and perform a cooling process to a predetermined temperature.

The cooling processing container 80 has a cooling cover 83 located on the upper side and capable of moving up and down, and a cooling stand storage portion 84. The cooling cover 83 has a substantially cylindrical shape. On the other hand, the cooling stand storage section 84 has a case 85 and a support ring 86 for holding the cooling stand 82.

The planar shape of the cooling table 82 is formed in a circular shape, and has a diameter larger than that of the wafer W. For this reason,
The cooling table 82 has a mounting surface 82a that can be mounted in contact with the entire wafer. Further, the cooling stand 82 has a Peltier element 87 inside, and the cooling operation of the Peltier element 87 enables high-precision cooling processing. The lifting pins 89 are inserted into the three through holes 88, respectively, and are moved up and down by the lifting mechanism 90. Therefore, the wafer W supported by the elevating pins 89 can be moved up and down between the cooling position indicated by the solid line W and the transfer position indicated by the two-dot chain line W ′ in the cooling processing chamber 81.

Here, the arrangement of the heating unit 50 is set on the back side (the right side in FIG. 5) of the coating and developing apparatus 1, and the arrangement of the cooling unit 51 is set on the front side of the coating and developing apparatus 1 (FIG. 5). On the left). Therefore, as shown in FIGS. 4 and 5, the heating table 62 is disposed in the heating / cooling processing device 44 on the opposite side of the resist coating device 15 and the developing processing device 16 (first processing device group G ₁ ). Then, the cooling table 82 is arranged in the heating / cooling processing device 44 on the side of the resist coating device 15 and the developing processing device 16.

The standby section 52 has a standby table 91.
The waiting table 91 is installed on a plate 92 fixed to the casing 44a in a horizontal posture. The plane configuration of the standby table 91 is, for example, circular, and three support pins 93 are provided on the upper surface thereof. Therefore, the stand 91 is configured to support the back surface of the wafer W with the support pins 93 and mount the wafer W in a horizontal posture.

The air flow forming means 54 is provided with an exhaust port 95 formed at the bottom corner of the casing 44a on the heating unit 50 side.
And an exhaust fan 97 provided in an exhaust pipe 96 connected to the exhaust port 95. The exhaust fan 97 is provided in a space S in which the heating table 62, the cooling table 82, and the standby table 91 are arranged.
The exhaust fan 97 is configured to exhaust the inside atmosphere.
Is operated to form the airflow A flowing from the cooling table 82 side to the heating table 62 side. Further, when the heat cover 63 is opened in the heat treatment container 60, the hot atmosphere generated by the heating table 62 immediately
5 will be sucked. On the other hand, the cooling processing container 80
When the cooling cover 83 is opened,
Is diffused into the casing 44a. For this reason, the airflow A has cool air capable of cooling the wafer.

As shown in FIG.
Is movable in the horizontal direction (X and Y directions in FIG. 4), is vertically movable (Z direction in FIG. 4), and is freely rotatable (θ direction in FIG. 4). . The wafer W is transported between the heating table 62, the cooling table 82, and the standby table 91.

The heating / cooling apparatus 44 according to the present embodiment is configured as described above, and the operation thereof will be described below. First, in the heating / cooling processing device 44, the exhaust fan 97 operates, and the airflow A is formed. The wafer W which exposure processing has been completed in the exposure apparatus, is carried into the fourth processing unit group G heat and cooling processing unit 44 belonging to _4.

The loaded wafer W is placed on the standby table 91 of the standby section 52. Thereafter, the wafer W is transferred to the heating unit 50 by the unit arm 53. Thermal cover 63
Is opened, and the wafer W is placed on the heating table 62. Heating table 6
On the wafer 2, the wafer W is heated to, for example, 200 ° C. During heating, since the heat cover 63 is closed, the heat treatment chamber 6 is closed.
1 does not diffuse into the casing 44a.

On the other hand, after the wafer W thus placed on the standby table 91 is transferred to the heating section 50 by the unit arm 53, the standby table 91 is vacant. wafer W is, continue carried into the fourth processing unit group G ₄ to the heat and cooling processing unit 44 belonging, is placed on the waiting stand 91 of the stand unit 52. When a predetermined time (for example, 90 seconds) elapses in the heating unit 50 and the heating process is completed, the heat cover 63 is opened, the unit arm 53 receives the wafer W from the heating table 62, and the cooling unit 5
It is immediately conveyed to one cooling stand 82. At this time, airflow A
Flows from the cooling table 82 side to the heating table 62 side, so that the thermal atmosphere generated by the heating table 62 can be prevented from flowing to the cooling table 82 side. Then, the hot atmosphere is exhausted from the exhaust port 95.

The wafer W placed on the cooling table 82
Is, for example, 23 ° C. due to the cooling action of the Peltier element 87.
(Room temperature). On the other hand, after the wafer W is transferred from the heating unit 50 to the heating unit 50 by the unit arm 53 in this way, the heating table 62 becomes empty, and the second wafer W placed on the standby table 91 is removed. The wafer is conveyed to the heating unit 50, where the heating process is subsequently performed. Further, after the second wafer W placed on the standby table 91 is transferred to the heating unit 50 by the unit arm 53, the standby table 91 becomes empty again.
The third wafer W after the exposure processing is
Is carried to the processing unit group heating and cooling apparatus 44 which belong to G _4, is placed on the waiting stand 91 of the stand unit 52. Then, in the cooling unit 51, for example, a predetermined time (for example, 60 seconds)
After a lapse of the cooling process, the wafer W is heated and
It is carried out of the cooling processing device 44. On the other hand, when the cooling process is completed in the cooling unit 51 and the wafer W is carried out of the heating / cooling processing device 44, the second wafer W for which the heating process is completed in the heating table 62 is cooled. Transported to In addition, since the heating table 62 is vacated by this, the third wafer W placed on the standby table 91 is transferred to the heating unit 50, and the heating unit 50 subsequently performs the heating process. Thereafter, the fourth and subsequent wafers W are sequentially placed on the standby table 91, and the same heating / cooling process continues thereafter.

According to the heating / cooling processing device 44,
The wafer W is sequentially transferred to the heating table 62 and the cooling table 82 by the unit arm 53, and the heating and cooling processes are continuously performed.
In the cooling process, the wafer W is placed on the cooling table 82, so that the entire wafer can be uniformly cooled. Furthermore, the conventional pre-cooling process can be omitted, the high-precision cooling process is performed without delay, and the time management for the heating and cooling processes is excellent. Therefore, the in-plane temperature distribution of the wafer W can be made uniform, and the cooling effect of each wafer W can be made the same even when a plurality of wafers W are heated and cooled. As a result, high-precision manufacturing technology can be realized, and it is possible to sufficiently cope with further miniaturization and higher integration of semiconductor devices.

Further, if the thermal cover 63 is opened after the heat treatment and the wafer W is exposed to the inside of the casing 44a, the wafer W comes into contact with the airflow A. Here, since the air flow A contains the cool air diffused from the cooling processing chamber 81, the wafer W can be cooled immediately. In particular, when a chemically amplified resist that is sensitive to temperature changes is used, the temperature of the wafer W is rapidly lowered to a temperature at which the amplification reaction of the resist does not proceed after post-exposure bake (PEB), which is a heating process after the exposure process. It is necessary to make the heating and cooling
In response to such a demand, the shift to the high-precision cooling process can be performed more quickly than in the past, and the deformation of the pattern and the deterioration in reproducibility can be prevented. Therefore, the yield can be improved.

Further, the heating table 62 is installed in the heating processing container 60, and the cooling table 82 is installed in the cooling processing container 80. Therefore, the heat treatment container 60 can prevent the thermal influence of the heating table 62 from diffusing to the surroundings, and the cooling processing container 80 can prevent the thermal influence of the heating table 62 from affecting the cooling table 82. it can. Further, the radiant heat of the heating table 62 can be blocked by the support ring 67. Therefore, even if the heating table 62 and the cooling table 82 are arranged in the same device, the intended processing can be performed.

Further, the wafer W to be processed next is made to stand by in the standby table 91 in advance, and the wafers W are successively transferred to the heating table 62 and the cooling table 82, so that a plurality of wafers W are continuously heated and cooled. can do. Therefore, the processing time can be reduced, and the throughput can be improved.

The heating table 62 is provided with the resist coating device 1.
The cooling stand 82 is disposed on the side opposite to the developing device 5 and the developing device 16.
It is arranged on the (first processing device group G ₁ ) side. Therefore, the cooling table 82 is interposed between the resist coating device 15 and the developing device 16 and the heating table 62, and the thermal influence of the heating table 62 does not affect the resist coating device 15 and the developing device 16. As a result, resist coating and development processing can be suitably performed on the wafer W.

In this embodiment, the thermal influence of the heating table 62 is caused by the heat treatment container 60 and the support ring 6.
7, the present invention is not limited to such an example. For example, an adiabatic shutter that can move up and down freely may be provided between the heating table 62 and the cooling table 82, and the radiant heat of the heating table 62 may be blocked by the adiabatic shutter.

In addition to providing the exhaust fan 97 on the heating table 62 side, a blower may be provided on the cooling table 82 side, and the air flow A may be formed by the blower and the exhaust fan 97. Also, a plurality of unit arms 53 are provided, and
The wafer may be transferred to the cooling table 82 from the heating table 62 at the same time, and the throughput may be further improved.

Heating / cooling processing units 34-37, 45-4
7 also has the same configuration as the heating / cooling processing unit 44, so that not only heating and cooling after exposure but also heating and cooling after resist coating and heating and cooling after development. Similar functions and effects can be obtained. Furthermore, an example in which a wafer W is used as the substrate has been described,
The present invention is not limited to such an example, and can be provided even when, for example, an LCD substrate is used.

[0050]

According to the first to fifth aspects of the present invention, the in-plane temperature distribution of the substrate is made uniform, and a plurality of substrates are heated and heated.
Even if the cooling process is performed, the cooling effect of each substrate can be made the same. Further, it is possible to prevent pattern deformation and to heat and cool a plurality of substrates by a so-called flow operation method. As a result, a high-precision manufacturing technology can be realized, and for example, it is possible to cope with a further miniaturization technology of a semiconductor device and improve a yield and a throughput.

In particular, according to the second and third aspects, it is possible to prevent the thermal influence of the heating table from affecting the cooling table. Even if the heating table and the cooling table are arranged in the same device, the expected effects are obtained. Can be performed. Further, according to the present invention, it is possible to prevent the thermal atmosphere generated by the heating table from flowing to the cooling table side, and to immediately cool the heat-treated substrate when transferring from the heating table to the cooling table. be able to.

According to the sixth aspect of the invention, the same functions and effects as those of the first to fifth aspects can be obtained. Further, it is possible to prevent the thermal influence of the heating table from affecting the liquid processing apparatus, and to appropriately perform predetermined liquid processing on the substrate. According to the seventh aspect of the present invention, the standby of the substrate, the heating step, and the cooling step can be performed in parallel, so that the processing time can be reduced and the throughput can be improved.

[Brief description of the drawings]

FIG. 1 is a plan view of a coating and developing apparatus provided with a heating / cooling apparatus according to an embodiment of the present invention.

FIG. 2 is a front view of the coating and developing apparatus of FIG. 1;

FIG. 3 is a rear view of the coating and developing apparatus of FIG. 1;

FIG. 4 is a plan view schematically showing an internal structure of the heating / cooling processing apparatus according to the embodiment of the present invention.

FIG. 5 is a cross-sectional view schematically showing an internal structure of the heating / cooling processing apparatus of FIG.

FIG. 6 is a plan view schematically showing an internal structure of a conventional heating / cooling apparatus.

[Explanation of symbols]

1 Coating and developing apparatus 34, 35, 36, 37, 44, 45, 46, 47
Heating / cooling processing device 53 Unit arm 54 Airflow forming means 60 Heating container 62 Heating table 80 Cooling container 82 Cooling table 91 Standby table 95 Exhaust port 97 Exhaust fan A Airflow S Space W Wafer

Claims (7)

[Claims] 1. An apparatus for heating and cooling a substrate, comprising: a heating table for mounting and heating the substrate; a cooling table for mounting and cooling the substrate; a standby table for waiting the substrate; A transfer mechanism for transferring a substrate between the heating table, the cooling table, and the standby table; and an airflow forming unit configured to generate an airflow in a space in which the heating table, the cooling table, and the standby table are arranged. And heating,
Cooling equipment. 2. The heating / cooling processing apparatus according to claim 1, further comprising a heating processing container for storing the heating table. 3. The heating / cooling processing apparatus according to claim 1, further comprising a cooling processing container for storing the cooling table. 4. The heating / cooling apparatus according to claim 1, further comprising a heat insulating material for blocking radiant heat of the heating table. 5. The air flow forming means includes: an exhaust port formed on the heating table side; and an exhaust port configured to exhaust an atmosphere in a space in which the heating table, the cooling table, and the standby table are arranged through the exhaust port. The heating / cooling apparatus according to claim 1, 2, 3, or 4, further comprising a mechanism. 6. An apparatus for processing a substrate, comprising: a heating / cooling processing apparatus according to claim 1, 2, 3, 4, or 5;
A liquid processing apparatus for supplying a processing liquid to the substrate to perform predetermined liquid processing; and the cooling table is disposed on the liquid processing apparatus side in the heating / cooling processing apparatus. , Substrate processing equipment. 7. A method of heating and cooling a substrate, the method including a step of holding the substrate, a step of heating the substrate, and a step of cooling the substrate, wherein the step of waiting the substrate; A heating / cooling method characterized in that two or more steps of a step of heating a substrate and a step of cooling a substrate are temporally overlapped.