JP2001220428A - Semiconductor device and mounted semiconductor device and repairing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prepare a semiconductor device capable of recovering only parts of a semiconductor element or a wiring circuit board from a sealing resin layer even in the case of recognizing a fault after sealing the semiconductor device with a resin. SOLUTION: The semiconductor device comprises semiconductor elements sealed by a sealing resin comprising an epoxy resin composition for sealing semiconductor devices including the following (A)-(C) components. (A) an epoxy resin, (B) a hardener and (C) a hardening accelerator. The above sealing resin manifests a thermosoftening at 150 deg.C.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an IR reflow furnace, for example, in which an epoxy resin composition as a sealing material is applied to a printed circuit board or a semiconductor element in advance, and then the printed circuit board and the semiconductor element are thermocompressed. Device in which a sealing resin layer is formed (under-filled) at the same time as electrical connection through the semiconductor device, and the semiconductor device obtained in this way is placed on a mounting substrate, and a sealing resin layer is formed in a gap between the two. The present invention relates to (underfilled) semiconductor device mounted bodies and a method for repairing the same.

[0002]

2. Description of the Related Art Conventionally, TAB (Tape Automated Bon
ding: Tape automated bonding), COB
(Chip On Board), cavity
An epoxy resin, a curing agent, and a curing accelerator are essential components for semiconductor encapsulation in fill, CSP (Chip Size Package: chip size package), BGA (Ball Grid Array: ball grid array), underfill, and the like. 2. Description of the Related Art A semiconductor device is manufactured by resin sealing by thermosetting using a composition.

[0003]

However, since the epoxy resin composition used for the resin encapsulation is a thermosetting resin composition, the epoxy resin composition after the semiconductor device is manufactured by resin encapsulation or mounted on a mother board or the like. In addition, there has been a problem that it is not possible to collect only a semiconductor element and components of a printed circuit board (interposer) when a defect is confirmed in a semiconductor device. In addition, as a method of collecting, a method of blowing hot air of 400 ° C. or more against the epoxy resin composition to decompose the resin or dissolving it with a chemical agent and collecting the same can be used. There is a problem that the semiconductor device is adversely affected.

The present invention has been made in view of such circumstances, and even when a defect is confirmed in a semiconductor device after resin sealing, it is possible to collect only a semiconductor element or a component of a printed circuit board from the sealing resin. It is an object of the present invention to provide a semiconductor device, a semiconductor device mounted body, and a repairing method which can be performed.

[0005]

In order to achieve the above-mentioned object, the present invention provides a semiconductor device using a sealing resin comprising a semiconductor sealing epoxy resin composition containing the following components (A) to (C). Is a semiconductor device in which the sealing resin exhibits thermal softening properties at 150 ° C. as a first gist. (A) Epoxy resin. (B) a curing agent. (C) a curing accelerator.

Further, according to the present invention, the semiconductor device is mounted on a mounting substrate via a connection electrode portion so as to face the printed circuit board itself, and a gap between the mounting substrate and the semiconductor device is provided. Is a semiconductor device mounted body sealed with a sealing resin made of a semiconductor sealing epoxy resin composition containing the following components (A) to (C), wherein the sealing resin is heated at 150 ° C. A second aspect of the present invention is a semiconductor device package having softening properties. (A) Epoxy resin. (B) a curing agent. (C) a curing accelerator.

Further, the present invention relates to the above-mentioned method for repairing a semiconductor device, wherein the encapsulating resin for the semiconductor device is removed by 150-250.
A third aspect of the present invention is a method for repairing a semiconductor device in which the semiconductor device is softened by heating to a temperature of ° C. and at least a semiconductor element is removed from the semiconductor device.

The present invention also relates to the above-mentioned method for repairing a semiconductor device package, wherein the sealing resin for the semiconductor device package is reduced by one.
A fourth gist of the present invention is a method of repairing a semiconductor device mounted body, which is softened by heating to 50 to 250 ° C. and takes out at least a mounting board from the semiconductor device mounted body.

That is, the present inventors have developed a series of sealing materials used for sealing a gap between an electrically bonded semiconductor element and a substrate, which can be removed even after resin sealing. The research was repeated. As a result, when the epoxy resin composition is used as the sealing material, the sealing resin portion after resin sealing has a material exhibiting thermal softening property at a specific temperature. After 250 ° C
Even at a low temperature below, only the semiconductor element and the components of the printed circuit board can be recovered from the sealing portion, and the present inventors have found that the semiconductor device has excellent repairability without adversely affecting other semiconductor devices, and has reached the present invention.

[0010] In particular, when an epoxy resin having two epoxy groups in one molecule is used and a phenolic compound having two phenolic hydroxyl groups in one molecule is used as a curing agent, after the above-mentioned sealing, An epoxy resin composition that facilitates repair is obtained.

In particular, when a phenolic compound having a terpene structure is used as a curing agent, an epoxy resin composition that can be easily repaired after the above sealing is obtained.

When a microcapsule-type curing accelerator is used as a curing accelerator, the epoxy resin composition for encapsulating a semiconductor containing the same has a very long pot life and is particularly poor in storage stability. It has the advantage of being superior.

In the case of a semiconductor device or a semiconductor device packaged with the epoxy resin composition for semiconductor encapsulation as described above, the encapsulating resin is softened in a low temperature range of 150 to 250 ° C. The semiconductor element, the printed circuit board, the mounting board, and the like can be easily taken out without adversely affecting other portions.

[0014]

Next, an embodiment of the present invention will be described in detail.

The epoxy resin composition for semiconductor encapsulation used for encapsulating the semiconductor device of the present invention comprises an epoxy resin (A component), a curing agent (B component), and a curing accelerator (C component). It is obtained by using.

The epoxy resin (component (A)) is not particularly limited, but is preferably a bifunctional type having two epoxy groups in one molecule. For example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin,
Bifunctional epoxy resins such as a biphenyl type epoxy resin, a stilbene type epoxy resin, a biphenyl ether type epoxy resin, and a hydroquinone type epoxy resin are exemplified. These may be used alone or in combination of two or more. In particular, it is preferable to use a bisphenol F liquid epoxy resin in that the fluidity of the epoxy resin composition is improved.

In the above epoxy resin, for example, it is preferable to use a bisphenol F type epoxy resin having an epoxy equivalent of 140 to 180 g / eq and a liquid.

The curing agent (B) used together with the component A
As the component), a phenolic compound having a phenolic hydroxyl group is preferably used, and in particular, a bifunctional type having two phenolic hydroxyl groups in one molecule is preferably used. Among them, phenolic compounds having a terpene structure represented by the following structural formulas (1), (2) and (3) are particularly preferably used. These may be used alone or in combination of two or more.

[0019]

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[0020]

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[0021]

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As the phenolic compound, those having a hydroxyl equivalent of 130 to 220 g / eq are preferable, and among them, those having a hydroxyl equivalent of 150 to 20 g / eq.
It is particularly preferable to use one having 0 g / eq.

The epoxy resin (A component) and the curing agent (B
When a phenolic compound is used as a curing agent, the ratio of the hydroxyl group in the phenolic compound per equivalent of the epoxy group in the epoxy resin is 0.6 to 1.
It is preferable to mix so as to be 4 equivalents. More preferably, it is 0.9 to 1.1 equivalent.

The curing accelerator (component C) used together with the above-mentioned components A and B is not particularly limited, and various conventionally known curing accelerators can be used. And in this invention, it is preferable to use a microcapsule type hardening accelerator from the point that the storage stability of an epoxy resin composition is excellent.

As the above-mentioned microcapsule-type curing accelerator, specifically, a core portion composed of various curing accelerators includes:
It has a core / shell structure covered with a shell part mainly composed of a polymer having a structural unit represented by the following general formula (4), and a reactive amino group present in the shell part is blocked. Microcapsule type curing accelerators.

[0026]

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In the microcapsule type hardening accelerator, the hardening accelerator included in the core portion is not particularly limited as long as it has an action of accelerating the hardening reaction, and conventionally known hardening accelerators are used. . And
In this case, those which are liquid at room temperature are preferable from the viewpoint of workability in preparing the microcapsules and characteristics of the obtained microcapsules. In addition, the liquid at room temperature means that the property of the curing accelerator itself is liquid at room temperature (25 ° C.), and that the liquid is dissolved or dispersed in any organic solvent or the like even if it is solid at room temperature. Is also included.

Specific examples of the curing accelerator included include alkyl-substituted guanidines such as ethylguanidine, trimethylguanidine, phenylguanidine and diphenylguanidine, 3- (3,4-dichlorophenyl) -1, 1-dimethylurea, 3-phenyl-1,
1-dimethylurea, 3- (4-chlorophenyl) -1,
3-substituted phenyl-1,1-dimethylureas such as 1-dimethylurea, imidazolines such as 2-methylimidazoline, 2-phenylimidazoline, 2-undecylimidazoline, 2-heptadecylimidazoline, 2-aminopyridine and the like Monoaminopyridines, N, N-dimethyl-
Amine imides such as N- (2-hydroxy-3-allyloxypropyl) amine-N'-lacimide, ethylphosphine, propylphosphine, butylphosphine,
Organic phosphorus compounds such as phenylphosphine, trimethylphosphine, triethylphosphine, tributylphosphine, trioctylphosphine, triphenylphosphine, tricyclohexylphosphine, triphenylphosphine / triphenylborane complex, and tetraphenylphosphonium tetraphenylborate; And diazabicycloalkene compounds such as diazabicyclo [5,4,0] undecene-7 and 1,4-diazabicyclo [2,2,2] octane. These may be used alone or in combination of two or more.

The polymer containing a polymer having the structural unit represented by the formula (4) as a main component is obtained, for example, by a polyaddition reaction between a polyvalent isocyanate and a polyvalent amine. Alternatively, it is obtained by reacting a polyvalent isocyanate with water.

The polyvalent isocyanate may be any compound having two or more isocyanate groups in the molecule. Specific examples thereof include m-phenylene diisocyanate, p-phenylene diisocyanate, and 2,4-tolylene diisocyanate. 2,6-tolylene diisocyanate, naphthalene-1,4-diisocyanate, diphenylmethane-4,4'-diisocyanate, 3,3'-dimethoxy-4,4'-biphenyl diisocyanate,
3,3'-dimethyldiphenylmethane-4,4'-diisocyanate, xylylene-1,4-diisocyanate, 4,4'-diphenylpropane diisocyanate,
Trimethylene diisocyanate, hexamethylene diisocyanate, propylene-1,2-diisocyanate,
Butylene-1,2-diisocyanate, cyclohexylene-1,2-diisocyanate, cyclohexylene-
Diisocyanates such as 1,4-diisocyanate, p
Phenylenediisothiocyanate, xylylene-1,
Triisocyanates such as 4-diisothiocyanate and ethylidene diisothiocyanate; tetraisocyanates such as 4,4'-dimethyldiphenylmethane-2,2 ', 5,5'-tetraisocyanate; hexamethylene diisocyanate and hexanetriol; Addenda,
Adducts of 2,4-tolylene diisocyanate with prenz catechol, adducts of tolylene diisocyanate and hexanetriol, adducts of tolylene diisocyanate and trimethylolpropane, adducts of xylylene diisocyanate and trimethylolpropane, hexa Like adducts of methylene diisocyanate and trimethylolpropane, trimers of aliphatic polyvalent isocyanates such as triphenyldimethylenetriisocyanate, tetraphenyltrimethylenetetraisocyanate, pentaphenyltetramethylenepentaisocyanate, lysine isocyanate, and hexamethylene diisocyanate. And isocyanate prepolymers. These may be used alone or in combination of two or more.

Among the above polyvalent isocyanates, adducts of tolylene diisocyanate and trimethylolpropane and adducts of xylylene diisocyanate and trimethylolpropane are preferable from the viewpoint of film forming property and mechanical strength when preparing microcapsules. It is preferable to use an isocyanate prepolymer represented by polymethylene polyphenyl isocyanate such as triphenyl dimethylene triisocyanate.

On the other hand, the polyvalent amine to be reacted with the polyvalent isocyanate may be a compound having two or more amino groups in the molecule, and specifically, diethylenetriamine, triethylenetetramine, tetraethylenepentamine. Min, 1,6-hexamethylenediamine, 1,8
-Octamethylenediamine, 1,12-dodecamethylenediamine, o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, o-xylylenediamine, m-xylylenediamine, p-xylylenediamine, menthanediamine, bis (4-amino-3-methylcyclohexyl) methane, isophoronediamine, 1,3
-Diaminocyclohexane, spiroacetal diamine and the like. These may be used alone or in combination of two or more.

In the reaction between the polyvalent isocyanate and water, first, an amine is formed by hydrolysis of the polyvalent isocyanate, and this amine reacts with an unreacted isocyanate group (so-called self-polyaddition reaction). Thereby, a polymer having a polymer having the structural unit represented by the general formula (4) as a main component is formed.

Further, as the polymer forming the shell portion (wall film), for example, a polyurethane-polyurea having a urethane bond by using a polyhydric alcohol in combination with the polyvalent isocyanate can also be mentioned.

The polyhydric alcohol may be any of aliphatic, aromatic and alicyclic, such as catechol, resorcinol and 1,2-dihydroxy-4.
-Methylbenzene, 1,3-dihydroxy-5-methylbenzene, 3,4-dihydroxy-1-methylbenzene, 3,5-dihydroxy-1-methylbenzene, 2,
4-dihydroxyethylbenzene, 1,3-naphthalene diol, 1,5-naphthalene diol, 2,7-naphthalene diol, 2,3-naphthalene diol, o,
o'-biphenol, p, p'-biphenol, bisphenol A, bis- (2-hydroxyphenyl) methane, xylylene diol, ethylene glycol, 1,3
-Propylene glycol, 1,4-butylene glycol, 1,5-pentanediol, 1,6-hexanediol, 1,7-heptanediol, 1,8-octanediol, 1,1,1-trimethylolpropane, hexane Triol, pentaerythritol, glycerin, sorbitol and the like can be mentioned. These can be used alone or 2
Used in combination of more than one species.

The above-mentioned microcapsule-type curing accelerator can be produced, for example, through the following three steps.

[First Step] A hardening accelerator as a core component is dissolved or finely dispersed in a polyvalent isocyanate as a raw material of a wall film (shell) to form an oil phase. Next, the oil phase is dispersed in the form of oil droplets in an aqueous medium (aqueous phase) containing a dispersion stabilizer to prepare an O / W type (oil phase / aqueous phase type) emulsion. Next, a polyvalent amine is added to and dissolved in the aqueous phase of the O / W emulsion,
Interfacial polymerization with the polyvalent isocyanate in the oil phase causes a polyaddition reaction. Alternatively, by heating the O / W emulsion, the polyvalent isocyanate in the oil phase reacts with water at the interface with the aqueous phase to generate an amine, and subsequently causes a self-polyaddition reaction. In this manner, the polyurea-based polymer, preferably the polyurea having the structural unit represented by the general formula (4) is converted into a shell portion (wall film).
The microcapsule dispersion liquid is obtained by preparing the microcapsules described below.

On the other hand, when a solid curing accelerator is dissolved in an organic solvent to form a core component, an emulsion of S / O / W (solid phase / oil phase / water phase) type is obtained. Also, this emulsion type is when the curing accelerator is lipophilic,
When the curing accelerator has hydrophilicity, it is difficult to form the emulsion type, but in this case, the solubility is adjusted so that an O / O (oil phase / oil phase) emulsion type or S / O Interfacial polymerization may be performed as a / O (solid phase / oil phase / oil phase) emulsion type.

The organic solvent in this case is not particularly limited as long as it is liquid at room temperature, but it is necessary to select a solvent that does not dissolve at least the shell part (wall film).
Specifically, in addition to organic solvents such as ethyl acetate, methyl ethyl ketone, acetone, methylene chloride, xylene, toluene, and tetrahydrofuran, phenylxylylethane,
Oils such as dialkylnaphthalene can be used.

[Second Step] A blocking agent is added to the microcapsule dispersion obtained in the first step to dissolve or disperse. At this time, it is effective to add the blocking agent after once removing the dispersion stabilizer and unreacted amine in the aqueous phase by centrifugation or the like.

[Third Step] The microcapsule dispersion obtained by blocking the amino group with a blocking agent in the second step is
After removing the excess blocking agent by centrifugation or filtration, the powder is dried to produce a powdery microcapsule-type curing accelerator.

First, in the first step, the dispersion stabilizer to be added to the aqueous medium (aqueous phase) includes water-soluble polymers such as polyvinyl alcohol and hydroxymethyl cellulose, anionic surfactants, and nonionic surfactants. Agent,
Examples include surfactants such as cationic surfactants. In addition, hydrophilic inorganic colloids such as colloidal silica and viscous minerals can also be used. The addition amount of these dispersion stabilizers is preferably set so as to be 0.1 to 10% by weight in the aqueous phase.

The blocking agent used in the second step is not particularly limited as long as it is a compound having a reactivity with an amino group. Examples thereof include an epoxy compound, an aldehyde compound, an acid anhydride and an ester. Compounds which react with amino groups such as compounds and isocyanate compounds to form a covalent bond are exemplified. Further, organic carboxylic acids such as acetic acid, formic acid, lactic acid, oxalic acid, and succinic acid, organic sulfonic acids such as p-toluenesulfonic acid, 2-naphthalenesulfonic acid, dodecylbenzenesulfonic acid, phenol compounds, boric acid, phosphoric acid, and nitric acid And acidic compounds which form a salt by neutralizing with amino groups such as inorganic acids such as nitrous acid and hydrochloric acid, and solid substances having an acidic surface such as silica and aerosil. Among these compounds, the above-mentioned acidic compounds are preferably used as compounds that effectively block amino groups present on the wall surface and inside the wall film, and formic acid and organic sulfonic acids are particularly preferably used.

The amount of the blocking agent to be added is such that the molar amount of the blocking agent is equivalent to that of the amino group present on the surface of the wall film and inside the wall film. Practically, for example, when an acidic compound is used as a blocking agent, an acidic substance (acidic compound) is added to the dispersion immediately after preparation of microcapsules (interfacial polymerization).
To adjust the pH of the dispersion from basic to acidic, preferably pH 2 to 5, and then remove excess acidic compounds by means such as centrifugation or filtration.

In the method for producing a microcapsule-type curing accelerator comprising the above first to third steps, as a second step, the unreacted free amine is obtained by passing the microcapsule dispersion through an acidic cation exchange resin column. Or a method of neutralizing residual amino groups.

The average particle size of the obtained microcapsule type curing accelerator is not particularly limited.
From the viewpoint of uniform dispersibility, the thickness is preferably set in the range of 0.05 to 500 μm, more preferably 0.1 to 3 μm.
0 μm. The shape of the microcapsule-type curing accelerator is preferably spherical, but may be elliptical. If the microcapsules are not perfectly spherical and the particle diameter is not uniformly determined, such as elliptical or flat, the simple average value of the longest diameter and the shortest diameter is defined as the average particle diameter.

Further, in the above-mentioned microcapsule-type curing accelerator, the amount of the curing accelerator included is preferably set to 10 to 95% by weight, particularly preferably 30 to 80% by weight, based on the total amount of the microcapsules. . That is, when the encapsulation amount of the curing accelerator is less than 10% by weight, the curing reaction time becomes too long and the reactivity becomes poor. Conversely, when the encapsulation amount of the curing accelerator exceeds 95% by weight, the thickness of the wall film increases. This is because there is a possibility that the core portion (curing agent) may be poor in isolation and mechanical strength.

The ratio of the thickness of the shell portion (wall film) to the particle size of the microcapsule type curing accelerator is 3 to 2
It is preferably set to 5%, particularly preferably 5 to 2%.
Set to 5%. That is, if the above ratio is less than 3%, sufficient mechanical strength cannot be obtained with respect to the shearing force (shear) applied in the kneading step during the production of the epoxy resin composition,
On the other hand, if it exceeds 25%, the release of the included curing accelerator tends to be insufficient.

The compounding amount of the curing accelerator (component C) is 100 parts by weight (hereinafter referred to as "parts") of the curing agent (component B).
) Is preferably set to 0.3 to 40 parts. Particularly preferred is 5 to 20 parts. That is, if the amount of the curing accelerator is less than 0.3 part, the curing speed is too slow to cause a decrease in strength, and if it exceeds 40 parts,
This is because the curing speed may be too high and the fluidity may be impaired.

The epoxy resin composition for encapsulating a semiconductor used in the present invention may optionally contain various fillers and additives in addition to the above-mentioned components A to C. Examples of the filler include, for example, silica, clay, gypsum, calcium carbonate, barium sulfate, alumina oxide, beryllium oxide, silicon carbide, silicon nitride, aerosil, and the like.Nickel, gold, copper, silver, tin, lead And conductive particles such as bismuth. Among them, spherical silica powder,
Specifically, spherical fused silica powder is particularly preferably used. Further, the average particle diameter is preferably in the range of 0.01 to 60 μm, more preferably in the range of 0.1 to 15 μm. In the present invention, the term “spherical” refers to a flow type particle image analyzer (FPIA-1 manufactured by SYSMEX CORPORATION).
The average sphericity measured using the “00 type” is 0.85 or more.

Examples of the above additives include flame retardants, waxes, leveling agents, defoamers, fluxes, pigments, dyes, silane coupling agents, titanate coupling agents, and the like. Examples of the silane coupling agent include γ-mercaptopropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, and γ-methacryloxypropyltrimethoxysilane. Examples thereof include methoxysilane and amino group-containing silane, and these may be used alone or in combination of two or more.

Examples of the flame retardant include novolak type brominated epoxy resin, brominated bisphenol A type epoxy resin, metal compounds such as antimony trioxide, antimony pentoxide, magnesium hydroxide and aluminum hydroxide, red phosphorus, phosphorus Examples thereof include phosphorus compounds such as acid esters, which are used alone or in combination of two or more.

Further, in addition to the above flame retardants, polyhedral complex metal hydroxides represented by the following general formula (5) can be used. The composite metal hydroxide has a polyhedral crystal shape, and has a conventional hexagonal plate shape, or a so-called thin plate-like crystal shape such as a scale-like shape. not,
The crystal growth in the thickness direction (c-axis direction) is large both vertically and horizontally. For example, a plate-shaped crystal has a large thickness direction (c-axis direction).
A composite metal hydroxide having a granular crystal shape which is more three-dimensionally and spherically shaped by crystal growth, for example, a substantially dodecahedral, a substantially octahedral, a substantially tetrahedral or the like.

[0054]

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Regarding the composite metal hydroxide represented by the general formula (5), M representing the metal element in the formula (5) is Al, Mg, Ca, Ni, Co, Sn, Zn, C
u, Fe, Ti, B and the like.

Q representing another metal element in the composite metal hydroxide represented by the general formula (5) is IVa, Va, VIa, VIIa, VIII, Ib, IIb in the periodic table. It is a metal element belonging to the group selected from. For example, Fe,
Co, Ni, Pd, Cu, Zn and the like can be mentioned, and they are selected alone or in combination of two or more.

Such a composite metal hydroxide having a polyhedral crystal shape can be obtained, for example, by controlling various conditions in the production process of the composite metal hydroxide.
Obtaining a composite metal hydroxide having a desired polyhedral shape, such as a substantially dodecahedral, a substantially octahedral, or a substantially tetrahedral shape, in which crystal growth in the thickness direction (c-axis direction) is large both vertically and horizontally. And usually consists of these mixtures.

Specific representative examples of the composite metal hydroxide having the polyhedral shape include hydrates of magnesium oxide / nickel oxide, hydrates of magnesium oxide / zinc oxide, and hydrates of magnesium oxide / copper oxide. Japanese products.

The composite metal hydroxide having the above polyhedral shape includes a particle size distribution (α) shown below.
It is preferable to have (γ). In addition, a laser type particle size analyzer is used for the measurement of the particle size distribution shown below. (Α) 10 to 35% by weight having a particle size of less than 1.3 μm. (Β) 50 to 65 particles having a particle size of less than 1.3 to 2.0 μm
weight%. (Γ) 10 to 30% by weight having a particle size of 2.0 μm or more.

The aspect ratio of the composite metal hydroxide having the above polyhedral shape is usually 1 to 8, preferably 1 to 8.
To 7, particularly preferably 1 to 4. The term “aspect ratio” as used herein refers to the ratio of the major axis to the minor axis of the composite metal hydroxide. That is, when the aspect ratio exceeds 8, the effect of lowering the viscosity when the epoxy resin composition containing the composite metal hydroxide is melted becomes poor. When used as a component of the epoxy resin composition for semiconductor encapsulation of the present invention, one having an aspect ratio of 1 to 4 is generally used.

Examples of the wax include compounds such as higher fatty acids, higher fatty acid esters, and higher fatty acid calcium, and they can be used alone or in combination of two or more.

Further, the epoxy resin composition for semiconductor encapsulation used in the present invention may further contain components such as silicone oil, silicone rubber, synthetic rubber, and reactive diluent in addition to the above-mentioned other additives. An ion trapping agent such as hydrotalcites or bismuth hydroxide may be blended for the purpose of stressing or improving the reliability in the humidity resistance reliability test.

The epoxy resin composition for semiconductor encapsulation used in the present invention can be produced, for example, as follows. That is, after the above-mentioned components A to C and various fillers and additives are mixed as required, the mixture is kneaded in a kneading machine such as a universal stirrer in a heated state and is melt-mixed. Next, by cooling this at room temperature (about 25 ° C.), the desired epoxy resin composition for semiconductor encapsulation can be produced. In addition, an organic solvent may be added to adjust the fluidity of the epoxy resin composition for semiconductor encapsulation. Examples of the organic solvent include toluene, xylene, methyl ethyl ketone (MEK), acetone, diacetone alcohol and the like. These may be used alone or in combination of two or more.

The epoxy resin composition for semiconductor encapsulation thus obtained is a reaction product (after completion of the reaction) corresponding to an encapsulation resin portion formed by encapsulation of the semiconductor element.
Shows heat softening property at 150 ° C. The expression “heat-softening property at 150 ° C.” means that a reaction product (a reaction product having a diameter of 50 mm × thickness of 3 mm) corresponding to a sealing resin formed into a semiconductor device is placed on a hot plate, and the surface of the reaction product is formed. After the temperature of 150 ° C., the hardness was measured with a Shore A hardness meter, and as a result,
30 or less. However, the epoxy resin composition used for this measurement is a resin excluding the filler, and is evaluated as a softening characteristic of the resin itself. In addition, the sealing resin (reaction product) formed using the above-described semiconductor sealing epoxy resin composition refers to, for example, a three-dimensionally crosslinked cured product or a linear (linear) reaction product. As an example, an epoxy resin composition excluding the filler is reacted at 150 ° C. for 3 hours.

The production of a semiconductor device using the above epoxy resin composition for semiconductor encapsulation can be carried out by various conventionally known methods. For example, flip chip, CO
B, graph top, cavity fill, CSP, TA
In mounting by B or the like, heating (about 30 to 90 ° C,
It is possible to manufacture a semiconductor device by potting the epoxy resin composition for semiconductor encapsulation (preferably about 60 to 80 ° C.) using a dispenser, and then heating and curing to form an encapsulation resin layer. it can. Note that the above mounting may be performed under vacuum.

The flip-chip mounting of the above-described semiconductor device manufacturing method will be specifically described with reference to a side-fill sealing method, a thermocompression connection sealing method, and a printing sealing method as examples.

[Side-Fill Sealing Method] First, a device in which a semiconductor element is mounted on a printed circuit board via a plurality of connection electrodes is prepared. Then, preheating (30 to 13
Heat (30 to 100 ° C.) is applied to the gap between the printed circuit board and the semiconductor element which has been heated to about 0 ° C., preferably about 60 to 100 ° C.).
(Preferably about 50 to 80 ° C.), the epoxy resin composition for semiconductor encapsulation is injected and filled using a dispenser, and then heated and cured to form an encapsulating resin layer. A semiconductor device can be manufactured by mounting.

The manufacture of a semiconductor device by the above-described side-fill sealing method may be performed under vacuum. As an apparatus to be performed under vacuum, there is, for example, a model MBC-V series manufactured by Musashi Engineering Co., Ltd. or the like. Further, when manufacturing a semiconductor device under the vacuum, after filling and filling the gap between the wiring circuit board and the semiconductor element under vacuum using a semiconductor dispensing epoxy resin composition using a dispenser, return to atmospheric pressure Further, a differential pressure filling of filling a semiconductor sealing epoxy resin composition may be performed.

[Thermo-compression connection sealing method] First, heating (about 30 to 100 ° C., preferably 50 to 80 ° C.)
The epoxy resin composition for semiconductor encapsulation, which has been subjected to about (° C.), is potted using a dispenser. Then, a thermo-compression connection sealing method using a flip chip bonder or the like (conditions: 175 ° C. × 20 N × 20 minutes + 220 ° C. × 5 N × 2)
By forming the sealing resin layer simultaneously with the electrical connection between the semiconductor element and the printed circuit board, the semiconductor device can be manufactured by flip-chip mounting.

The production of a semiconductor device by the above-mentioned thermocompression connection sealing method may be performed under vacuum if necessary.

Further, instead of potting using a dispenser, if possible, coating is performed by printing, and then, the electrical connection between the semiconductor element and the wiring circuit board is performed by a thermocompression bonding method using a flip chip bonder or the like. At the same time, a sealing resin layer may be formed. In the application by printing, the entire printing atmosphere may be heated, or a mask, a squeegee, or the like may be partially heated (a heating target is 30 to 1).
00 ° C).

[Print Sealing Method] First, a printed circuit board on which a semiconductor element is mounted via a plurality of connection electrodes is prepared. Then, the space between the printed circuit board and the semiconductor element, which has been heated (about 30 to 130 ° C., preferably about 60 to 100 ° C.) in advance, is heated (about 30 to 100 ° C.,
The epoxy resin composition for semiconductor encapsulation (preferably about 50 to 80 ° C.) is dropped using a dispenser, and a sealing resin layer is formed by print encapsulation, whereby a semiconductor device by flip-chip mounting is formed. Can be manufactured.

For the above-mentioned printing sealing, a vacuum printing sealing device (model VPE-100 series) manufactured by Toray Engineering Co., Ltd. using a vacuum differential pressure is used because air bubbles hardly enter the sealing resin layer. preferable.

FIG. 1 shows an example of the semiconductor device thus obtained. In FIG. 1, reference numeral 4 denotes a printed circuit board on which a semiconductor element 1 is mounted via a plurality of connection electrode portions 2. The gap between the printed circuit board 4 and the semiconductor element 1 is sealed with the sealing resin 3 made of the semiconductor sealing epoxy resin composition.

On the other hand, a method for manufacturing a cavity-filled semiconductor device of the above-described method for manufacturing a semiconductor device will be specifically described.

First, a semiconductor element mounted on a printed circuit board and electrically connected to each other by a bonding wire or the like is prepared. Then, preheating (30 to 130)
The above-mentioned epoxy resin composition for semiconductor encapsulation, which is heated (about 30 to 100 ° C., preferably about 50 to 80 ° C.) on the printed circuit board and the semiconductor element which have been heated to about 30 ° C., preferably about 60 to 100 ° C. A cavity-filled semiconductor device can be manufactured by forming an encapsulating resin layer so as to incorporate a semiconductor element by potting the object with a dispenser and curing by heating.

The production of a semiconductor device by the above sealing method may be performed under vacuum. As an apparatus to be performed under vacuum, for example, a model MBC-V manufactured by Musashi Engineering Co., Ltd.
Series.

Another manufacturing method will be described. That is,
First, a device in which a semiconductor element is mounted on a printed circuit board and both are electrically connected by a bonding wire or the like is prepared. Then, heating (about 30 to 100 ° C., preferably about 50 to 100 ° C.) is performed on the printed circuit board and the semiconductor element which have been previously heated (about 30 to 130 ° C., preferably about 60 to 100 ° C.)
The above-mentioned epoxy resin composition for semiconductor encapsulation (approximately 80 ° C.) is supplied by printing or the like, and is heat-cured to form an encapsulation resin layer so as to incorporate the semiconductor element. Can be manufactured.

The production of a semiconductor device by the above-described print sealing is as follows.
It may be performed under vacuum. Furthermore, when manufacturing a semiconductor device under vacuum, after printing and sealing under vacuum, the air pressure of the atmosphere is increased to remove voids in the epoxy resin composition for semiconductor sealing, and further finishing printing is performed in that state May be performed.

The semiconductor device thus obtained is used, for example, for mounting a mounting board (motherboard) and used for manufacturing a semiconductor device mounted body. That is, on a mounting board (mother boat) via a plurality of connection electrode portions,
Along with mounting the semiconductor device with its own wiring circuit board facing, the gap between the mounting substrate and the semiconductor device is filled with a semiconductor sealing epoxy resin composition having the above characteristics, A semiconductor device package is manufactured by forming a sealing resin layer by heating and curing.

FIG. 2 shows an example of the thus obtained semiconductor device package. In FIG. 2, reference numeral 6 denotes a mounting board, on which a semiconductor device (see FIG. 1) is mounted with the wiring circuit board 4 facing itself via a plurality of connection electrode portions 7. Have been. The gap between the semiconductor device and the mounting substrate 6 is sealed by the sealing resin 5 made of the semiconductor sealing epoxy resin composition.

The method of heating and curing the above-mentioned epoxy resin composition for semiconductor encapsulation is not particularly limited, and examples thereof include a convection dryer, an IR reflow oven, and a heating method using a hot plate. Can be

As a method of filling the gap between the mounting substrate and the semiconductor device by using the epoxy resin composition for semiconductor encapsulation, for example, the flip chip of the above-described method for manufacturing a semiconductor device may be used. The same method as described for mounting, a side-fill sealing method, a thermocompression connection sealing method, a printing sealing method, and the like can be given. In addition, the above-mentioned epoxy resin composition for semiconductor encapsulation, nickel, gold, silver,
Disperse conductive particles such as copper, tin, lead, bismuth, etc.
F (Anisotropic Conductive Film), ACP (Anisot
It may be used for flip-chip mounting as a ropic conductive paste. As another usage method, the epoxy resin composition for semiconductor encapsulation may be used as a dam material on a printed circuit board, an adhesive between the printed circuit board and a heat sink, and a die bonding agent.

The semiconductor devices and semiconductor device mounted bodies of various modes obtained in this manner are subjected to repair, for example, as follows. That is, by heating the semiconductor device and the semiconductor package sealed as described above, the sealing resin portion is heated to 150 to 250 ° C. and softened. Then, the semiconductor element, the printed circuit board and the mounting board are taken out. Thus, the semiconductor device and the semiconductor product are repaired.

The heating method is not particularly limited, and may be, for example, a convection dryer, an IR reflow oven, or the like as in the heating method of the epoxy resin composition for semiconductor encapsulation.
A heating method using a hot plate or the like can be used.

Next, examples will be described together with comparative examples.

First, prior to the examples, the following components were prepared.

[Epoxy resin] Bisphenol F type epoxy resin [liquid at 25 ° C. (1.3 Pa · s): epoxy equivalent: 158 g / eq, YDF-817 manufactured by Toto Kasei Co., Ltd.
0].

[Curing agent a] A phenol compound represented by the following structural formula (1) [having a hydroxyl equivalent of 162 g / eq, a viscosity of 0.095 Pa · s (150 ° C.), manufactured by Yashara Chemical Co.]

[0090]

Embedded image

[Hardening agent b] A phenol compound represented by the following structural formula (6) [triphenylmethane type: hydroxyl equivalent: 101 g / eq, viscosity: 0.34 Pa · s (150
C), MEH-7500 manufactured by Meiwa Kasei Co., Ltd.).

[0092]

Embedded image

[Curing Accelerator c] A microcapsule-type curing accelerator was prepared according to the method described above. That is, first, 11 parts of an adduct of 3 mol of xylylene diisocyanate and 1 mol of trimethylolpropane and 4.6 parts of an adduct of 3 mol of tolylene diisocyanate and 1 mol of trimethylolpropane were added to triphenyl as a curing accelerator. An oil phase was prepared by uniformly dissolving in a mixture of 7 parts of phosphine and 3.9 parts of ethyl acetate. Further, an aqueous phase composed of 100 parts of distilled water and 5 parts of polyvinyl alcohol was separately prepared, and the oil phase prepared above was added thereto and emulsified with a homomixer to form an emulsion state.
The polymerization reactor was equipped with a dropping funnel.

On the other hand, 10 parts of an aqueous solution containing 3 parts of triethylenetetramine was prepared, placed in a dropping funnel provided in the polymerization reactor, dropped into the emulsion in the reactor, and subjected to interfacial polymerization at 70 ° C. for 3 hours. Was carried out to obtain an aqueous suspension of a microcapsule-type curing accelerator. Subsequently, after removing polyvinyl alcohol and the like in the aqueous phase by centrifugation, 100 parts of distilled water was added and dispersed again to obtain a suspension.

Formic acid was added dropwise to the suspension to adjust the pH of the system to 3. This produced a microcapsule-type curing accelerator in which amino groups on the wall surface and inside were blocked by formic acid. The microcapsule-type curing accelerator thus obtained was separated as centrifugal separation, washed repeatedly with water, and dried to isolate as free-flowing powdery particles. The average particle size of the microcapsule-type curing accelerator was 2 μm. The shell thickness ratio to the microcapsule particle size is 15%.
And the encapsulation amount of triphenylphosphine is 30
% By weight.

[Curing accelerator d] 2-ethyl-4-methylimidazole.

[0097]

Examples 1-4, Comparative Examples The above components were blended in the proportions shown in Table 1 below, kneaded in a universal stirring vessel and melt-mixed. Next, this was cooled at room temperature to produce a desired epoxy resin composition for semiconductor encapsulation.
The kneading conditions are as shown below.

[Kneading Conditions] First, an epoxy resin and a phenolic compound were charged and mixed at 110 ° C. for 5 minutes to dissolve all solids. Next, after adjusting the temperature to 65 ° C., a curing accelerator was added, mixed for 2 minutes, and received.

[0099]

[Table 1]

The thermal softening properties at 150 ° C. of the reaction products (cured products) of the epoxy resin compositions for semiconductor encapsulation of the examples and comparative examples thus obtained were evaluated.
In addition, the repairability of a semiconductor device manufactured using the epoxy resin composition for semiconductor encapsulation was evaluated according to the following method. These results are shown in Table 2 below.
Are also shown.

[Evaluation of Thermal Softening Property at 150 ° C.] Each of the above epoxy resin compositions for semiconductor encapsulation was cured under the conditions of 150 ° C. × 3 hours, and a reaction product sample (cured product having a diameter of 50 mm × thickness of 3 mm) was obtained. ) Was prepared. This sample was placed on a hot plate, and the temperature of the surface of the sample (cured product) was set to 150 ° C. Then, the hardness of the sample was measured using a Shore A hardness meter. As a result, those having a hardness of 30 or less were evaluated as ○, and those with a hardness of 30
Those that exceeded と し て were evaluated as ×.

[Repairability] A semiconductor device was manufactured using each of the epoxy resin compositions for semiconductor encapsulation as follows. That is, first, the semiconductor element and the printed circuit board were electrically joined by the connection bumps by a known method.
Then, the epoxy resin composition for semiconductor encapsulation was heated to 50 to 80 ° C. and poured into the gap between the semiconductor element and the wiring circuit board. After that, the semiconductor device was manufactured by heating at 150 ° C. for 3 hours to react the epoxy resin composition and sealing with a sealing resin. Next, the obtained semiconductor device was heated to 220 ° C. on a hot plate, and the semiconductor element was taken out of the sealing resin layer. The sample that could be taken out without any problem was indicated by ○, and the sample that could not be taken out was indicated by ×. In addition,
Other conditions are as follows.・ Semiconductor element and connection bump: PACKAGING TECHNOLO
GIES Flip ChipTest Kit (type No.3) Size 10 × 10mm I / O number 572, area bump

[0103]

[Table 2]

From the results in Table 2 above, all the products of Examples were
The cured product as a reaction product showed heat softening at 150 ° C. As a result, the semiconductor device manufactured using the product of the above example exhibited good repairability. On the other hand, the comparative example product had a cured product of 150
C. did not show heat softening properties. Therefore, the semiconductor device manufactured using the comparative example product did not exhibit repairability.

[0105]

As described above, the present invention provides an epoxy resin (component A), a curing agent (component B), and a curing accelerator (component C).
A semiconductor device in which a semiconductor element is encapsulated with an encapsulating resin made of an epoxy resin composition for encapsulating a semiconductor, comprising: a sealing resin having thermal softening properties at 150 ° C. As described above, since the sealing resin exhibits thermal softening properties at a specific temperature of 150 ° C., the semiconductor element or the wiring circuit board can be taken out of the sealing resin layer by heating even after sealing, For example, when a defect is confirmed in a semiconductor device, a semiconductor element, a printed circuit board, and the like can be repaired, so that good repairability is provided.

In particular, when an epoxy resin having two epoxy groups in one molecule is used, and a phenolic compound having two phenolic hydroxyl groups in one molecule is used as a curing agent, the above-mentioned resin after sealing is used. An epoxy resin composition that facilitates removal of semiconductor components is obtained.

When a phenolic compound having a terpene structure is used as the curing agent (component B), an epoxy resin composition is obtained which makes it easier to take out the semiconductor component after sealing.

When a microcapsule-type curing accelerator is used as the above-mentioned curing accelerator (component C), the potting time of the epoxy resin composition for semiconductor encapsulation containing it becomes extremely long, and There is an advantage that the stability is particularly excellent.

In the case of a semiconductor device or a semiconductor device packaged with the epoxy resin composition for semiconductor encapsulation as described above, the encapsulation resin is softened in a low temperature range of 150 to 250 ° C. The semiconductor element, the printed circuit board, the mounting board, and the like can be easily taken out without adversely affecting other portions.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating an example of a semiconductor device of the present invention.

FIG. 2 is a cross-sectional view illustrating an example of a semiconductor device package according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor element 2, 7 Connection electrode part 3, 5 Sealing resin 4 Wiring circuit board 6 Mounting board

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4J036 AC05 AD07 AD08 AD10 AD15 AD21 DA05 DB06 DB10 DC22 DC25 DC38 DC41 DC45 DC46 DC48 DD07 DD09 FB08 FB12 HA07 JA07 5F061 AA01 BA04 CA10 CB02 GA02

Claims (8)

[Claims] 1. A semiconductor device in which a semiconductor element is sealed with a sealing resin comprising an epoxy resin composition for semiconductor sealing containing the following components (A) to (C): Exhibiting a thermal softening property at 150 ° C. (A) Epoxy resin. (B) a curing agent. (C) a curing accelerator. 2. The epoxy resin as the component (A),
2. The semiconductor according to claim 1, which is an epoxy resin having two epoxy groups in one molecule, and wherein the curing agent as the component (B) is a phenolic compound having two phenolic hydroxyl groups in one molecule. apparatus. 3. The semiconductor device according to claim 1, wherein the curing agent as the component (B) is a phenolic compound having a terpene structure. 4. The semiconductor device according to claim 1, wherein the curing accelerator as the component (C) is a microcapsule-type curing accelerator. 5. The semiconductor device, wherein a semiconductor element is mounted on a printed circuit board via a connection electrode portion, and a gap between the printed circuit board and the semiconductor element is filled with an epoxy resin composition for semiconductor encapsulation. The semiconductor device according to claim 1, wherein the semiconductor device is sealed with a sealing resin made of the following. 6. On a mounting board, via a connection electrode portion,
6. The semiconductor device according to claim 5, wherein the semiconductor device according to claim 5 is mounted so as to face the printed circuit board itself, and a gap between the mounting substrate and the semiconductor device contains the following components (A) to (C). What is claimed is: 1. A semiconductor device mounted body sealed with a sealing resin made of an epoxy resin composition, wherein the sealing resin exhibits thermal softening properties at 150 ° C. (A) Epoxy resin. (B) a curing agent. (C) a curing accelerator. 7. The method for repairing a semiconductor device according to claim 1, wherein the sealing resin of the semiconductor device is heated to 150 to 250 ° C. to soften the resin, and A method for repairing a semiconductor device, wherein at least a semiconductor element is taken out. 8. The method for repairing a semiconductor device package according to claim 6, wherein the sealing resin of the semiconductor device package is 150 to
A method for repairing a semiconductor device mounted body, wherein the method is softened by heating to 250 ° C., and at least a mounting board is taken out from the semiconductor device mounted body.