JP2001217615A - High-frequency signal processor and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thin, small-sized, and light-weight high-frequency signal processor as a high-frequency signal processor which is constituted as a module by uniting circuit elements, such as a filter and an antenna, and to provide its manufacturing method. SOLUTION: The signal processor is equipped with a housing 2, made of a dielectric material having a storage part containing a high-frequency circuit and a band-pass filter BPF1, which is composed of a conductive wiring pattern formed directly on the housing 2 and connected to the high-frequency circuit.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency signal processing apparatus for processing high-frequency signals in, for example, a microwave band, a quasi-microwave band, and a millimeter wave band, and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, wireless LANs, various communication terminals, etc.
In high-frequency applications using microwave and millimeter-wave bands as carriers, demands for smaller and thinner devices, substrates, and modules are increasing. For this reason,
2. Description of the Related Art A high-frequency signal processing device in which passive elements such as filters and antennas and active elements such as ICs are mounted at a high density, and a microwave communication function and the like are integrated and modularized has started to appear. 30A and 30B are configuration diagrams illustrating an example of a modularized signal processing device. FIG. 30A is a plan view and FIG. 30B is a cross-sectional view. High-frequency signal processing device 200 shown in FIG.
Is provided with a lower lid 202 and an upper lid 203 each formed of a molded body having concave portions 202a and 203a formed therein,
The lower cover 202 and the upper cover 203 allow the housing 201
Is composed. By joining the lower lid 202 and the upper lid 203 to each other, the closed space formed by the respective recesses 202a and 203a serves as a housing part for housing a board and an electronic component. The substrate 2 is placed in the concave portion 202a of the lower lid 202.
On the surface of the substrate 204, a ground layer 210 and a wiring pattern 212 are formed, and an IC 205 for high-frequency signal processing, an IC 206 for baseband signal processing, a chip capacitor 208, a chip coil 208 209, a band pass filter 207 and the like are mounted. In the high-frequency signal processing device having such a configuration, for example, a signal processing of a high-frequency signal in a microwave band or a millimeter wave band is performed by each of the above-described components.

[0003]

By the way, in the high-frequency signal processing device 200 described above, when the housing 201 is to be further thinned, first, it is conceivable that the substrate 20
4 is to reduce the thickness of the electronic components mounted on the housing 4 to reduce the thickness of the housing 201. However, IC205 and IC2
06 is directly mounted on the substrate 204 as a thin semiconductor chip made of silicon or GaAs, it is possible to reduce the height occupied by the active circuit components IC205 and IC206.
Passive circuit components such as 7 are usually formed of a ceramic material or the like, and it is difficult at present to reduce the thickness to the same level as a semiconductor chip made of silicon or GaAs. Also, for example, JP-A-8-335803,
JP-A-7-283679, JP-A-7-27350
No. 2, JP-A-6-318801, etc., it is possible to reduce the thickness of the filter component by forming the filter circuit on a dielectric substrate using microstrip lines. However, when the substrate on which the filter circuit and the like are formed is mounted on the housing 201,
There is a limit to the thickness of the housing 201.

On the other hand, the high-frequency signal processing device 20 having the above configuration
In order to add an antenna function of transmitting and receiving a high-frequency signal such as a microwave band, a millimeter wave band, or the like to 0, for example, as shown in FIG. A configuration is adopted in which an antenna 220 formed into a chip is connected via the antenna 22. With the configuration shown in FIG. 31, the high-frequency signal processing device 2
However, there are disadvantages such as the area occupied by the entire 00 increases and the weight of the high-frequency signal processing device 200 also increases.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and is directed to a high-frequency signal processing apparatus in which circuit elements such as a filter and an antenna are integrated into a module.
It is an object of the present invention to provide a high-frequency signal processing device that is reduced in thickness, size, and weight, and a method of manufacturing the same.

[0006]

A high-frequency signal processing apparatus according to the present invention comprises a housing made of a dielectric material having a housing for housing a high-frequency circuit, and a conductive wiring pattern formed directly on the housing. And a circuit element connected to the high-frequency circuit.

According to the method of manufacturing a high-frequency signal processing device of the present invention, the first and second lids each have a joint portion joined to the outer peripheral portion and a concave portion on at least one of the opposing surfaces facing each other. And a step of directly forming, on at least one of the first and second lids, a conductive wiring pattern constituting a circuit element connected to a high-frequency circuit and a conductive wiring for electrically connecting the high-frequency circuit. And mounting the circuit component of the high-frequency circuit in at least one of the concave portions of the first and second lids, and joining the joint of the first and second lids.

In the present invention, a conductive element having a predetermined pattern is directly formed on the surface of a dielectric housing to form a circuit element which constitutes a part of the circuit function performed by the high-frequency signal processing device. That is, by forming a circuit element directly on the housing by a conductive wiring pattern instead of a chip-shaped circuit component, the housing can be made thinner, lighter, and smaller in area and volume.

[0009]

Embodiments of the present invention will be described below with reference to the drawings. First Embodiment FIG. 1 is a diagram showing a structure of a high-frequency signal processing device according to a first embodiment of the present invention, wherein (a) is a plan view,
(B) is a sectional view. In FIG. 1, a high-frequency signal processing device 1 includes a housing 2 including an upper lid 3 and a lower lid 4, a conductive wiring 13 directly formed on a surface of a recess 4 a of the lower lid 4,
Ground layer 11 directly formed on the surface of concave portion 4a of lower lid 4
A chip-shaped capacitor 9, a chip-shaped coil 10 electrically connected to the conductive wiring 13 or the ground layer 11,
A circuit component comprising an IC chip 6 for high-frequency signal processing, an IC chip 7 for baseband signal processing, and the like;
And a ground layer 16 formed on the outer side surface 4b.
In addition, the signal processing device 1 includes a bandpass filter BPF1 configured by a part of the conductive wiring 13 formed in a predetermined pattern.

FIG. 2 is a diagram showing an example of a high-frequency circuit. The high-frequency circuit 300 shown in FIG.
1, the band-pass filter circuit 302, and the RF circuit 30
2 and a BB circuit 304. The BB circuit 304
For example, it is a circuit for processing a baseband signal in a relatively low frequency band, which is a signal obtained by discretizing information such as voice. The BB circuit 304 receives a baseband signal from the RF circuit 302 when the high-frequency circuit 300 functions as a receiving circuit, and converts the baseband signal into an RF circuit 3 when the high-frequency circuit 300 functions as a transmitting circuit.
02 is output.

The RF circuit 302 is a circuit for high-frequency signal processing for modulating a baseband signal into a high-frequency signal when the high-frequency circuit 300 functions as a receiving circuit. When the high-frequency circuit 300 functions as a transmission circuit, the BB circuit 3 demodulates the high-frequency signal into a baseband signal.
04.

When the high-frequency circuit 300 functions as a receiving circuit, the band-pass filter circuit 302 passes only a high-frequency signal of a predetermined frequency band among the electromagnetic waves received by the antenna circuit 301 and outputs the signal to the RF circuit 302. I do. When the high-frequency circuit 300 functions as a transmission circuit, only high-frequency signals in a predetermined frequency band among signals output from the RF circuit 302 are passed to the antenna circuit 301 and output.

The antenna circuit 301 includes a high-frequency circuit 300
Functions as a receiving circuit, receives the transmitted electromagnetic wave and outputs it to the band-pass filter circuit 302. When the high-frequency circuit 300 functions as a transmission circuit, it emits a high-frequency signal that has passed through the band-pass filter circuit 302.

The frequency bands of the signals processed by the high-frequency circuit 300 are, for example, high-frequency bands such as a MHz band and a GHz band, and specifically, a microwave band and a millimeter-wave band. Further, in the high-frequency signal processing device 1 described above, the band-pass filter circuit 302 of the high-frequency circuit 300 is configured by the band-pass filter BPF1 formed directly on the housing 2, and the RF circuit 303 is configured by the IC chip 6 for high-frequency signal processing.
, And the BB circuit 304 is composed of an IC chip 7 for baseband signal processing. In the high-frequency signal processing device 1 described above, the bandpass filter circuit 302 and the RF
The connection with the circuit 303 is reduced, for example, in order to reduce a low frequency component for transmitting a high frequency signal such as a GHz band.
This is performed by a chip-shaped capacitor 9. In the high-frequency signal processing device 1 described above, the antenna circuit 301 can be configured by, for example, an external antenna component or the like.

In the high-frequency signal processing apparatus 1, the upper cover 3 and the lower cover 4 constituting the housing 2 are molded products each having a rectangular shape and a rectangular outer diameter made of a dielectric material, and have concave portions 3a on one surface. , 4a are formed products. The upper lid 3 and the lower lid 4 have a predetermined thickness of, for example, about 0.3 mm, and joints 3c and 4c to be joined to each other are formed on the outer peripheral portion. Upper lid 3 and lower lid 4
Is formed of a dielectric material, and in particular, is preferably formed of a dielectric material having excellent electric characteristics in a high frequency region and a material having excellent moldability. Among electrical characteristics in a high frequency region, a material having a small dielectric loss tangent (tan δ), that is, a material having a small dielectric loss is preferable. Examples of such a dielectric material having good electric characteristics in a high frequency region and having excellent moldability include an organic resin such as a liquid crystal polymer. When a liquid crystal polymer is used, from the viewpoint of mounting circuit components using, for example, solder, those having excellent heat resistance and a thermal expansion coefficient capable of mounting a bare chip made of silicon, GaAs, or the like are used. I do.

The IC chips 6 and 7 are so-called bare chips made of, for example, a semiconductor such as silicon or GaAs. The bare IC chips 6 and 7 are directly mounted on the surface of the concave portion 4 a of the lower lid 4. And is electrically connected to the conductive wiring 13 formed on the surface of the concave portion 4 a of the lower lid 4.

The conductive wiring 13 is formed of, for example, a conductive material such as gold or copper, and is formed directly on the surface of the molded housing 2 and is electrically connected to each circuit component and the ground layer 11. ing. A part of the conductive wiring 13 formed in a predetermined pattern constitutes a bandpass filter BPF1. The ground layers 11 and 16 are also formed of the same conductive material as the conductive wiring 13 and are formed directly on the surface of the molded housing 2.

The band-pass filter BPF1 includes a lower cover 4 which is a dielectric, a conductive pattern 13 having a predetermined pattern formed on the surface of a concave portion 4a of the lower cover 4, and a contact formed on an outer surface 4b of the lower cover 4. It is constituted by the stratum 16. here,
FIG. 3 is a diagram showing a structure of a conductive wiring pattern forming the bandpass filter BPF1. The band-pass filter BPF1 shown in FIG. 3 is a band-pass filter including parallel conductive wiring patterns 21, 22, and 23 having a line width w and including a distributed constant resonator. Conductive wiring pattern 2
The line width w of 1, 22, and 23 is a value corresponding to the thickness of the lower cover 4. For example, an input / output terminal I / O of a high-frequency signal such as a millimeter wave or a microwave is connected to an end of the conductive wiring pattern 21 and the conductive wiring pattern 22 that do not face each other. 2
The connection portions 21a and 22a formed in the middle of 2 are connected to the ground layer 11, respectively.

The conductive wiring patterns 21 and 22 are arranged on the same straight line, opposing ends are separated by a predetermined distance L ₂ , and the conductive wiring patterns 21 and 22 and the conductive wiring pattern 23 are separated by a predetermined distance. They are separated from each other by L _3. Further, the length L ₁ of the facing portion between the conductive wiring patterns 21 and 22 and the conductive wiring pattern 23, the distance L ₂ between the facing ends of the conductive wiring pattern 21 and the conductive wiring pattern 22,
The distance L ₃ between the conductive wiring patterns 21 and 22 and the ground layer 11 connected thereto is determined by the bandpass filter B
PF1 is appropriately set so as to have a desired frequency characteristic.

Next, a method of manufacturing the high-frequency signal processing device 1 having the above configuration will be described. First, the upper lid 3 and the lower lid 4 constituting the housing 2 are molded by an injection molding method using, for example, a resin such as a liquid crystal polymer.

There are various methods for forming the conductive wiring 13, the ground layer 11 and the ground layer 16 on the upper lid 3 and the lower lid 4 by injection molding. For example, MID (Molded In) is used.
A conductive material such as copper or gold can be directly formed on the surface of an injection molded product by using a technology for manufacturing a terconnect device. The MID is obtained by forming a conductive material on the surface of an injection molded body by, for example, a method such as electroless plating. Since the MID manufacturing technology is a well-known technology, a detailed description is omitted.

Next, circuit components such as IC chips 6 and 7 are directly mounted on the upper lid 3 and the lower lid 4 on which the conductive wiring 13, the ground layer 11 and the ground layer 16 are formed. A well-known mounting technique can be used for mounting each circuit component.

When each circuit component is mounted on the upper lid 3 and the lower lid 4, the joining portions 3c and 4c of the upper lid 3 and the lower lid 4 are joined to each other. For joining the joining portions 3c and 4c of the upper lid 3 and the lower lid 4, for example, an ultrasonic welding method can be used.

The upper lid 3 and the lower lid 4 are integrated into a housing, which is a closed space formed inside the housing 2 so that each circuit component is housed.

Here, FIG. 4 is a graph obtained by calculating the frequency characteristics of the band-pass filter BPF1 formed in the high-frequency signal processing device 1 having the above configuration using a high-frequency circuit simulator. Note that the band-pass filter BPF1
The material for forming the lower cover 4 of the housing 2 is a dielectric constant εr in the GHz band of 2.9 and a dielectric loss tangent tan δ of 0.0.
025, and the thickness of the lower lid 4 is 0.3 mm
And Further, 8.5 mm approximately the length L ₁ of the portion facing the conductive wiring pattern 21 and 22 and the conductive wiring pattern 23 shown in FIG. 3, between the opposed ends of the conductive wiring pattern 21 and the conductive wiring pattern 22 of the the distance L ₂ to 2.0mm approximately, conductive wiring patterns 21 and 22 and the distance L ₃ between the ground layer 11 connected thereto to approximately 1.5 mm. As can be seen from FIG. 4, the bandpass filter BPF
1 is that the center frequency of the pass band is approximately 5 GHz,
The insertion loss is about 1 dB. The pass band frequency of the band-pass filter BPF1 can be freely set by changing the resonator length and the like.

As described above, according to the present embodiment, the bandpass filter BPF1 composed of the distributed constant resonator
Are formed directly on the surface of the lower lid 4 of the housing 2 made of a dielectric material.
It is possible to reduce the number of chip-like circuit components constituting the circuit of the high-frequency signal processing device 1. That is, instead of mounting the chip-shaped circuit component having the function of the band-pass filter in the housing portion of the housing 2, the band-pass filter is formed by the conductive wiring patterns 21, 22 and 23 formed directly on the surface of the housing 2. With this configuration, the proportion of the chip-shaped circuit components in the housing portion of the housing 2 can be reduced, and the housing 2 can be made thinner. In other words, all the circuits of the high-frequency signal processing device 1 are configured by chip-shaped circuit components,
When a circuit component is housed in the housing, for example,
Among chip-shaped circuit components such as a silicon chip and a GaAs chip, the height of a housing portion such as a band-pass filter is controlled, that is, a function of a circuit component higher than other circuit components is substituted. By forming the circuit element by the conductive wiring patterns 21, 22 and 23 formed directly on the housing 2, the housing 2 can be made thinner.

Further, according to the present embodiment, by forming a band-pass filter directly on the dielectric housing 2, the number of parts and the cost of parts can be reduced, and the weight of the high-frequency signal processing device 1 can be reduced. Also becomes possible. Further, according to the present embodiment, the amount of solder used to mount the chip-shaped circuit component having the function of the band-pass filter in the housing portion of the housing 2 can be reduced, and the influence on the environment can be reduced. In addition, the weight of the high-frequency signal processing device 1 itself can be reduced. Further, according to the present embodiment, the chip-like circuit components constituting the circuit of the high-frequency signal processing device 1 such as the IC chips 6 and 7 are directly mounted on the housing 2 without using a mounting substrate. Therefore, the thickness of the housing 2 can be further reduced by the thickness of the mounting substrate.

Further, according to the present embodiment, the conductive wiring patterns 21, 22 and 2 of the bandpass filter BPF1 are provided.
Of the upper and lower dielectrics sandwiching 3, the upper dielectric is air r
(Space), and the lower dielectric is the lower lid 4. Therefore, the loss due to the dielectric above the conductive wiring patterns 21, 22 and 23 can be reduced. Further, even if the filter characteristics are deviated from the design after the bandpass filter BPF1 is manufactured, the conductive wiring pattern 2
Trimming such as pattern cutting of 1, 22, and 23 can be easily performed.

In this embodiment, all the conductive wirings 13 including the conductive wiring patterns 21, 22 and 23 of the band-pass filter BPF1 are formed directly on the housing 2. Only the wiring patterns 21, 22, and 23 are directly formed on the housing 2, and the other conductive wirings 13 are formed on a mounting substrate.
A configuration in which these connections are made later by soldering or the like is also possible. Further, in the above-described embodiment, a case has been described in which a bandpass filter of a distributed constant resonator type is used as a circuit directly formed on the housing, but a lumped constant (L, C) type circuit may be formed. . Further, a circuit element having another function such as a low-pass filter or a high-pass filter may be formed without being limited to the band-pass filter.

Second Embodiment FIG. 5 is a view showing the structure of a high-frequency signal processing device according to a second embodiment of the present invention, wherein FIG.
(B) is a sectional view. The high-frequency signal processing device 31 according to the present embodiment has the basic configuration described in the first embodiment.
This is the same as the high-frequency signal processing device 1 according to the first embodiment, but differs from the high-frequency signal processing device 1 according to the first embodiment in that the thickness of the formation region 4d of the bandpass filter BPF1 of the lower lid 4 is different. The point is that it is formed thicker than the part. The formation region 4d of the bandpass filter BPF1 of the lower cover 4 projects from the surface of the concave portion 4a of the lower cover 4.

The high-frequency signal processing device 31 according to the present embodiment
Then, since a part of the lower lid 4 forming the housing 2 forms the bandpass filter BPF1, when the thickness of the housing 2 is reduced in order to make the high-frequency signal processing device 31 thinner, In order to obtain a band-pass filter having a constant frequency characteristic, the line width w of the conductive wiring patterns 21, 22, and 23 of the band-pass filter BPF1 shown in FIG. However, as the line width w of the conductive wiring patterns 21, 22, and 23 is reduced, the resistance in the conductive wiring patterns 21, 22, and 23 increases, and the insertion loss in the bandpass filter BPF1 also increases.

For this reason, in the present embodiment, as shown in FIG. 6, the thickness of the bandpass filter BPF1 forming region 4d on the surface of the concave portion 4a of the lower cover 4 constituting the housing 2 is partially increased. I have. If the thickness of the band-pass filter BPF1 formation region 4d on the surface of the concave portion 4a of the lower cover 4 constituting the housing 2 is partially increased, the band is reduced even if the thickness of the other portions of the lower cover 4 is reduced. It is not necessary to reduce the line width w of the conductive wiring patterns 21, 22 and 23 constituting the pass filter BPF1, and the line width w can be secured to some extent.
Since the line width w of the conductive wiring patterns 21, 22, and 23 constituting the band-pass filter BPF1 can be secured to some extent, an increase in the resistance value of the conductive wiring patterns 21, 22, and 23 can be suppressed, and the insertion loss of the band-pass filter BPF1 can be reduced. Increase can be prevented.

On the other hand, when the thickness of the lower cover 4 constituting the housing 2 is reduced, the mechanical strength of the lower cover 4 itself also decreases. For this reason, by partially increasing the thickness of the formation region 4d of the bandpass filter BPF1, it is possible to prevent the mechanical strength of the lid 4 itself from decreasing. That is, according to the present embodiment, the thickness of the formation region 4d of the band-pass filter BPF1 on the surface of the concave portion 4a of the lower lid 4 constituting the housing 2 is partially increased, whereby the lower portion of the housing 2 is formed. Bandpass filter BPF1 caused by reducing the thickness of lid 4
, And a decrease in the mechanical strength of the lower lid 4 itself can be suppressed at the same time.

In order to partially increase the thickness of the formation region 4d of the bandpass filter BPF1 of the lower cover 4 constituting the housing 2, for example, the above-described MID manufacturing technique can be used. That is, when the lower cover 4 is injection-molded, a protruding portion is integrally formed so as to protrude from the surface of the concave portion 4a of the lower cover 4 to form the formation region 4d of the bandpass filter BPF1, and the conductive wiring 13 is formed. When the bandpass filter BP is formed directly on the lower lid 4, the bandpass filter BP
Conductive wiring patterns 21, 22 and 23 constituting F1
Are also formed at the same time.

FIG. 7 is a graph obtained by calculating the frequency characteristics of the band-pass filter BPF1 in which the thickness of the formation region 4d of the housing 2 is partially increased using a high-frequency circuit simulator. The dielectric material of the lower cover 4 on which the conductive wiring pattern forming the bandpass filter BPF1 is formed has a relative dielectric constant εr of 2.9 and a dielectric loss tangent tanδ of 0.0025 in the GHz band. used. Further, the thickness of the upper lid 3 and the lower lid 4 of the housing 2 was set to about 0.3 mm, and the thickness of the partially thick portion was set to about 1.0 mm. As can be seen from FIG. 7, the bandpass filter BPF
The center frequency of one pass band is about 5 GHz, and the insertion loss is about 0.5 dB. As described above, by partially increasing the thickness of the formation region 4 d of the distributed constant band-pass filter BPF <b> 1 of the lower cover 4 constituting the housing 2, it is possible to reduce insertion loss in terms of electrical characteristics. it can. Further, in the housing 2 which is thinned as a whole, the band-pass filter BPF1
When there is a portion having a large thickness, such as the formation region 4d, the mechanical strength of the housing 2 itself can be improved. Note that the pass band frequency of the band pass filter BPF1 can be freely set by changing the resonator length and the like.

As described above, according to the present embodiment, in addition to the same effects as those of the above-described first embodiment, the band-pass filter BP of the casing which is an injection-molded product and is a dielectric is provided.
The characteristics of the circuit element can be adjusted by partially changing the thickness of the region where the circuit element such as F1 is formed. In addition, it is possible to easily change the thickness of the housing 2 by injection molding, and it is not necessary to use a new component to adjust the characteristics of the circuit element. Can be suppressed. In the present embodiment, a case where a distributed constant resonator type band-pass filter is used as a circuit element has been described. Alternatively, a lumped constant (L, C) type may be formed. Also, not limited to bandpass filters,
Circuit elements having other functions, such as a low-pass filter and a high-pass filter, may be formed.

Third Embodiment FIG. 8 is a view showing the structure of a high-frequency signal processing device according to a third embodiment of the present invention, wherein (a) is a plan view,
(B) is a sectional view. The high-frequency signal processing device 41 shown in FIG. 8 has the same configuration as the first and second embodiments described above.
A housing 2 composed of an upper lid 3 and a lower lid 4 and a recess 4 of the lower lid 4
a conductive wiring 13 formed directly on the surface of the lower cover 4, a flat ground layer 11 formed directly on the surface of the recess 4 a of the lower lid 4,
A circuit component including a chip-shaped capacitor 9, a chip-shaped coil 10, an IC chip 6 for high-frequency signal processing, an IC chip 7 for baseband signal processing, and the like, which are electrically connected to the conductive wiring 13 or the ground layer 11; And a ground layer 16 formed on the outer surface 4b of the lower lid 4. Further, the high-frequency signal processing device 41 includes the ground layer 17 formed on the outer surface 3 b of the upper lid 3. Further, a bandpass filter BPF2 constituted by conductive wiring patterns 42 and 43 formed directly on the surface of the concave portion 4a of the lower cover 4 constituting the housing 2 similarly to the conductive wiring 13 is provided.
Further, on the surface of the concave portion 4a of the lower lid 4, around the region where the band-pass filter BPF2 is formed, the protrusion portion 45, which is thicker than the other portions, protrudes from the surface of the concave portion 4a at a predetermined height. It has. The forming material and manufacturing method of the housing 2 are the same as those described in the above embodiment.

FIG. 9 is a plan view showing the structure around the bandpass filter BPF2 formed in the high-frequency signal processing device 41. 10 is a sectional view taken along line AA of FIG. 9, FIG. 11 is a sectional view taken along line BB of FIG. 9, and FIG. 12 is a sectional view taken along line CC of FIG. And FIG.
FIG. 3 is a sectional view taken along the line DD in FIG. 9 to 13
, The conductive wiring patterns 42 and 43 constituting the band-pass filter BPF2 are formed as a part of the conductive wiring 134 formed directly on the housing 2, and one end is opened and the other end is connected to the ground layer 11. To form two distributed constant resonators short-circuited. Further, the conductive wiring pattern 42, 43 is the length L ₄ is set to a length of approximately lambda / 4. Here, λ is the wavelength of the electromagnetic wave. The structure of the band-pass filter BPF2 is well-known, and a detailed description is omitted.

The protruding portion 45 formed on the surface of the concave portion 4a of the lower cover 4 constituting the housing 2 is provided with conductive wiring patterns 42, 4
3, and the height of the protrusion 45 is smaller than at least the sum of the depth of the concave portion 3a of the upper lid 3 and the depth of the concave portion 4a of the lower lid 4. . A ground layer 48 is formed on the surface on the open end side of the protrusion 45. This ground layer 48 is formed of a conductive material such as gold or copper, for example.
5a and the side surface 45b.

As shown in FIG. 10, a part of the conductive wiring patterns 42 and 43 is formed on the side surface 45b and the upper surface 45a of the protrusion 45. Such a recess 4a of the lower lid 4
For example, the above-described MID manufacturing technique can be used as a method for forming the protruding portion 45 formed on the surface of the substrate and the ground layer 48 on the protruding portion 45.

The band-pass filter BPF2 includes conductive wiring patterns 42 and 43 and conductive wiring patterns 42 and 43.
Distributed constant resonance formed by a lower cover 4 made of a dielectric on which the lower cover 3 is formed, a ground layer 16 formed on the outer surface 4b of the lower cover 4, and a space existing on the conductive wiring patterns 42 and 43. It is a bandpass filter composed of a filter. The band-pass filter BPF2 is sandwiched from above and below by a ground layer 16 formed on the lower lid 4 and a ground layer 17 formed on the outer surface 3b of the upper lid 3, and furthermore, the periphery of the conductive wiring patterns 42, 43 is formed. It is surrounded by a ground layer 48 formed on the projection 45 of the surrounding lower lid 4.

That is, the band-pass filter BPF2
Are electromagnetically shielded by the ground layers 16, 17, and 48. As described above, if the bandpass filter BPF2 is not shielded, a desired filter characteristic of the bandpass filter BPF2 may not be obtained due to generation of an unnecessary wave. However, in the present embodiment, the influence of the unnecessary wave is suppressed as much as possible. It is a structure that can be done.

FIG. 14 shows the high-frequency signal processing device 4 described above.
1 is a model in which a shield structure of a bandpass filter BPF2 is simplified. In the model of FIG. 14, a so-called impedance step type distributed constant resonator is formed. FIG. 15 is a cross-sectional view taken along line EE of FIG. 14, and FIG. 16 is a cross-sectional view taken along line FF of FIG. In FIG. 14 to FIG.
The conductive wiring patterns 42 and 43 constituting the PF2 are:
The conductive wiring patterns 42 and 43 are formed on the lower lid 4, which is a dielectric, and are surrounded by a ground layer 49 in the vertical and peripheral directions. The conductive wiring patterns 42 and 4
A space SP is formed on the upper side of 3 between itself and the ground layer 49.

FIG. 17 is a graph showing the results obtained by electromagnetic field simulation of the frequency characteristics of the band-pass filters of the models shown in FIGS. The conditions of the electromagnetic field simulation are as follows.
The length L ₄ of each of 2 and 43 is about 6 mm, and the lower lid 4 and the ground layer 4
The height H ₁ of approximately 1mm space SP formed between the 9,
The thickness t of the lower lid 4 as a dielectric was set to about 0.3 mm.
The relative permittivity εr of the material forming the lower lid 4 was 2.9, and the dielectric loss tangent tan δ was 0.0025.

As can be seen from FIG. 17, the center frequency of the pass band of the band-pass filter of the model shown in FIGS. 14 to 16 is about 7 GHz, and the insertion loss is about 1 dB.
The pass band frequency can be freely set by changing the resonator length and the like.

As described above, in this embodiment, in addition to the same effects as those of the above-described first and second embodiments, in addition to contact with the surface of the projection 45 formed on the lower lid 4 which is an injection-molded product. Since the ground layer 48 is formed to form the shield structure of the bandpass filter BPF2, the shield structure can be realized relatively easily. That is, it is possible to easily change the thickness of the housing 2 by injection molding, and to easily cope with the formation of a shield structure that electrically surrounds the periphery of a circuit element formed directly on the housing, Since no new components are used to form the shield structure, an increase in the number of components can be suppressed. Further, in the present embodiment, by forming the protruding portion 45 thicker than the other portions on the lower lid 4, the mechanical strength of the lower lid 4 can be improved, and as a result, the mechanical strength of the housing 2 can be improved. Target strength can be improved. Further, by forming the conductive wiring pattern constituting the bandpass filter directly on the housing 2, the same effect as in the above-described embodiment can be obtained, and in addition, the conductive wiring pattern can be formed directly on the housing 2. Also, the formation of the ground layer 48 on the projecting portion 45 formed on the housing 2 can be performed simultaneously with the formation of the conductive wiring pattern, so that the manufacturing cost can be reduced.

In the present embodiment, a part of the shield structure of the band-pass filter BPF2 is replaced with the outer surface 3b of the upper lid 3.
Is formed by the ground layer 17 formed in the
7 may be formed on the surface of the concave portion 3 a of the upper lid 3. In the present embodiment, the protrusion 45 is formed on the lower lid 4. However, the protrusion may be formed on the surface of the recess 3 a of the upper lid 3. Further, in the present embodiment, the thickness of the region where the conductive wiring patterns 42 and 43 forming the bandpass filter BPF2 of the lower lid 4 are not changed, but, for example, as in the above-described second embodiment, It is also possible to adopt a configuration in which the thickness of the region where the bandpass filter BPF2 of the lower lid 4 is formed is partially increased.
Further, in this embodiment, a case has been described in which a distributed constant resonator type band-pass filter is used as a circuit element, but a lumped constant (L, C) type may be formed. Further, a circuit element having another function such as a low-pass filter or a high-pass filter may be formed without being limited to the band-pass filter.

Fourth Embodiment FIGS. 18A and 18B are views showing the structure of a high-frequency signal processing device according to a fourth embodiment of the present invention, wherein FIG. 18A is a plan view, and FIG. is there. A high-frequency signal processing device 61 shown in FIG. 18 includes a housing 2 including an upper lid 3 and a lower lid 4 and conductive wiring directly formed on the surface of a concave portion 4 a of the lower lid 4, as in the first embodiment described above. 13 and recess 4 of lower lid 4
a ground layer 11 formed directly on the surface of
Alternatively, a circuit component including a chip-shaped capacitor 9, a chip-shaped coil 10, an IC chip 6 for high-frequency signal processing, an IC chip 7 for baseband signal processing, and the like, which are electrically connected to the ground layer 11, and a lower cover 4 and a flat ground layer 16 formed on the outer side surface 4b. further,
The high-frequency signal processing device 61 according to the present embodiment includes a band-pass filter B formed by a part of the conductive wiring pattern formed on the joint 4 c of the lower lid 4 in the conductive wiring 13.
PF3 is provided. The forming material and manufacturing method of the housing 2 are the same as those described in the above embodiment.

The joint 4c of the lower lid 4 constituting the housing 2
The lower lid 4 is formed to be thicker than other portions. This is because the mechanical strength of the upper lid 3 and the lower lid 4 decreases as the thickness of the housing 2 of the high-frequency signal processing device 61 decreases, that is, as the thickness of the upper lid 3 and the lower lid 4 decreases. For example, there is a possibility that the function of the housing 2 for protecting the circuit components housed inside the housing 2 cannot be exhibited. For this reason, in the present embodiment, the thickness of the joining portion 4c of the lower lid 4 is set to, for example, about 1 mm, and the thickness of the other portions is set to 0.3 mm.
About. The thickness of the upper lid 3 is, for example,
It is about 0.3 mm.

The thickness of the joint 4c of the lower cover 4 is
When the thickness is larger than the thickness of the other portions, the joining surface 4f of the joining portion 4c has a larger area than the joining surface 3f of the upper lid 3, and the joining surface 4f of the joining portion 4c and the joining surface 3f of the upper lid 3 are joined. Then, the contact portion S where the joining surface 4f and the joining surface 3f come into contact with each other
1 and a surplus portion S2 which does not contact the joint surface 3f of the upper lid 3 occurs on the joint surface 4f.

In the present embodiment, the joining surface 4f of the lower lid 4
Is added to the surplus part S2 of the bandpass filter BPF3
Is formed directly. That is, a conductive wiring pattern forming the band-pass filter BPF3 is formed in a surplus portion S2 generated in the joining portion 4c of the lower lid 4, which is a thick portion formed to reinforce the mechanical strength of the housing 2. The conductive wiring pattern constituting the band-pass filter BPF3 is formed of a conductive material such as copper or gold similarly to the other conductive wirings 13.

FIG. 19 is a diagram showing the structure of the conductive wiring pattern of the bandpass filter BPF3. The bandpass filter BPF3 shown in FIG. 19 is a bandpass filter including a distributed constant resonator having the same structure as the bandpass filter BPF1 shown in FIG. 3, and has parallel conductive wiring patterns 62, 63 and 64 having a line width w. It has. In addition,
The bandpass filter BPF3 shown in FIG. 19 is formed along the shape of the rectangular surplus portion S2 of the joining portion 4c of the lower cover 4 as shown in FIG. Formed.

The line width w of the conductive wiring patterns 62, 63 and 64 is determined by the thickness of the lower lid 4, that is, the joint 4 of the lower lid 4.
The value corresponds to the thickness of c. Conductive wiring pattern 6
2 is connected to an input / output terminal I / O of a high-frequency signal such as a millimeter wave or a microwave, and is connected halfway between the conductive wiring pattern 62 and the conductive wiring pattern 63. Connecting portion 62a formed in
63a are each connected to the ground layer 11.

The length L ₆ of the facing portion between the conductive wiring patterns 62 and 63 and the conductive wiring pattern 64, the distance L ₇ between the facing ends of the conductive wiring pattern 62 and the conductive wiring pattern 63, distance L ₈ between 62 and 63 and the ground layer 11 to be connected thereto, the band-pass filter BPF3 is appropriately set so as to have a desired frequency characteristic.

FIG. 20 is a graph showing the result of calculating the frequency characteristics of the distributed constant band-pass filter BPF3 of the model shown in FIG. 19 using a high-frequency circuit simulator. The relative permittivity εr of the material forming the lower cover 4 which is the dielectric on which the conductive wiring patterns 62, 63 and 64 constituting the bandpass filter BPF3 are formed is 2.9, and the dielectric loss tangent tan δ is 0.0025. did. Furthermore, the length L ₆ of the facing portion between the conductive wiring patterns 62 and 63 and the conductive wiring pattern 64 is about 18.5 mm, and the distance L ₇ between the facing ends of the conductive wiring pattern 62 and the conductive wiring pattern 63 is about 18.5 mm. 4 mm, the distance L between the conductive wiring patterns 62 and 63 and the ground layer 11 connected thereto.
₈ is about 7.5 mm. As can be seen from FIG. 20, the center frequency of the pass band of the bandpass filter BPF3 under the above conditions is approximately 2.5 GHz, and the insertion loss is approximately 0.4 dB. The pass band frequency can be freely set by changing the resonator length and the like.

As described above, according to the present embodiment, in order to prevent a decrease in mechanical strength of the housing 2 caused by the thinning of the housing 2 of the high-frequency signal processing device 61, the lower cover constituting the housing 2 is formed. 4 is partially increased in thickness, and a band-pass filter BPF
3 are formed. As described above, the conductive wiring pattern 6 is formed on the surplus portion S2 of the joint 4c of the lower lid 4 which is not normally used.
2, 63 and 64, the recess 4 of the lower lid 4 is formed.
The area available for a can be increased, and as a result, the area and volume of the housing 2 can be reduced while maintaining the mechanical strength of the housing 2. That is, the above-mentioned first to first
In the third embodiment, the band-pass filter BPF1 or BPF2 can be formed directly on the surface of the concave portion 4a of the lower lid 4 to make the housing 2 thinner. In addition to making the body 2 thinner, the area and volume of the housing 2 can be further reduced.

Further, according to the present embodiment, since the thickness of the joining portion 4c of the lower lid 4 is made thicker than other portions, the band-pass filter is operated by the same operation as the above-described second embodiment. The insertion loss of the BPF 3 can be reduced.
Further, according to the present embodiment, the joint 4c of the lower cover 4 constituting the housing 2 made of a dielectric, and the joint 4c of the lower cover 4
Conductive patterns 62, 63 and 6 directly formed on
4, a ground layer 16 formed on the outer surface 4b of the lower lid 4,
The space existing above the conductive wiring patterns 62, 63 and 64 constitutes a band-pass filter BPF3 comprising a distributed constant resonator.
Since the upper portions of 2, 63 and 64 are spaces (air), the insertion loss of the band-pass filter BPF3 due to the dielectric can be further reduced.

In this embodiment, the case where a distributed constant resonator type band-pass filter is used as a circuit element has been described. Alternatively, a lumped constant (L, C) type circuit element may be formed. Further, a circuit element having another function such as a low-pass filter or a high-pass filter may be formed without being limited to the band-pass filter. Further, in the present embodiment, the joining portion 4c of the lower lid 4 constituting the housing 2 has been described as a configuration in which the entire region is thickened. However, the present invention is not limited to this, and only a necessary portion is thickened. It is also possible to adopt a configuration in which a conductive wiring pattern is directly formed in a surplus portion generated by this thickening.

Further, in the present embodiment, the conductive wiring pattern is formed directly on the surplus portion of the joining portion 4c of the lower cover 4 constituting the housing 2 which does not contact the joining surface 3f of the joining portion 3c of the upper cover 3. However, for example, the joining portion 4 of the lower lid 4
c formed between the joint surface 4f of the upper cover 3 and the joint surface 3f of the joint 3c of the upper cover 3, that is, the upper cover 3 and the lower cover 4 which are dielectrics.
A configuration may be adopted in which the conductive wiring pattern is sandwiched between the joints 3c and 4c. In this case, the loss due to the dielectric of the bandpass filter BPF3 tends to increase, but it is more effective in reducing the area and volume of the housing 2. Further, in the present embodiment, the flat ground layer 16 is formed on the entire outer surface 4b of the lower cover 4, but the band-pass filter BPF3 on the outer surface 4b of the lower cover 4 is formed.
May be configured to form the ground layer 16 only in the region corresponding to the formation region. Further, in the present embodiment, all the conductive wiring patterns forming the band-pass filter BPF3 are formed in the thick portion. However, for example, if the area for forming all the conductive wiring patterns is not enough, a part of the conductive wiring pattern may be thickened. It is also possible to adopt a configuration in which it is formed on the flesh portion and the remainder is formed on the surface or the like of the concave portion 4a of the lower lid 4.

Fifth Embodiment FIGS. 21A and 21B are views showing the structure of a high-frequency signal processing device according to a fifth embodiment of the present invention, wherein FIG. 21A is a plan view, and FIG. is there. In the present embodiment, a case will be described in which an antenna element is formed as a circuit element directly formed on a housing instead of the bandpass filter as in the above-described embodiment. In FIG. 21, a high-frequency signal processing device 71 includes a housing 2 including an upper lid 3 and a lower lid 4, and a lower lid 4.
Electrically connected to the conductive wiring 13 formed directly on the surface of the concave portion 4a, the flat ground layer 11 formed directly on the surface of the concave portion 4a of the lower lid 4, and the conductive wiring 13 or the ground layer 11. Chip-shaped capacitor 9 and chip-shaped coil 1
And a circuit component including an IC chip 6 for high-frequency signal processing, an IC chip 7 for baseband signal processing, and the like.

The high-frequency signal processing device 71 according to the present embodiment
Unlike the first to fourth embodiments, the bandpass filter is not formed directly on the housing 2 but mounted as a chip-shaped circuit component 80 in the recess 4a of the lower lid 4. Further, the high-frequency signal processing device 71 includes an antenna element ANT constituted by a conductive wiring pattern 73 formed in a predetermined pattern on the outer surface of one end of the lower lid 4 in the longitudinal direction. A dielectric member 7 having a rectangular cross section corresponding to the region where the conductive wiring pattern 73 is formed is provided on one end side of the surface of the concave portion 4a of the lower lid 4 in the longitudinal direction of the lower lid 4.
2 is fixed. Further, a flat ground 82 is formed on one side surface of the lower lid 4 so as to be continuous with the conductive wiring pattern 73.

On the other hand, in the high-frequency signal processing device 71, a connection terminal 75 for connecting to information equipment such as a personal computer is formed on the outer surface of the end of the upper cover 3 opposite to the side on which the antenna element ANT is formed. Have been.

In the high-frequency signal processing device 71, the antenna circuit 30 included in the high-frequency circuit 300 described in FIG.
1. The functions of the band-pass filter circuit 302, the RF circuit 302, and the BB circuit 304 are integrally provided. That is, the antenna circuit 301 is configured by the antenna element ANT formed directly on the housing 2, the band-pass filter circuit 302 is configured by the chip-shaped circuit component 80, the RF circuit 302 is configured by the IC chip 6, and BB
The circuit 304 is configured by the IC chip 7.

FIG. 22 shows the high-frequency signal processing device 7 having the above-described configuration.
Conductive wiring pattern 7 constituting one antenna element ANT
FIG. 23 is a plan view showing the structure of the formation portion of FIG.
2 is a side view as seen from the arrow G side of FIG. 2, FIG. 24 is a cross-sectional view taken along line HH of FIG. 22, and FIG.
FIG. 26 is a sectional view taken along line KK of FIG. 22. 22 to 26, the conductive wiring pattern 73 constituting the antenna element ANT includes the entire outer surface 4k on one end side in the longitudinal direction of the lower cover 4 of the housing 2 and the outer surface 4l in the short direction of the lower cover 4. Is formed directly on part of Outer surface 4 of lower lid 4 of this conductive wiring pattern 73
The end 73c on the side formed on the side k is open, and the end 73b formed on the outer side 41 of the lower cover 4 of the conductive wiring pattern 73 is connected to the ground layer 82 formed on the outer side 41. Short circuit.

The power supply wiring pattern 73a, which is a part of the conductive wiring pattern 73, penetrates from the outer surface 41 of the lower cover 4 to the inside of the lower cover 4 and extends to the surface of the concave portion 4a of the lower cover 4. , Are electrically connected to a circuit component 80 as a bandpass filter shown in FIG. The conductive wiring pattern 73 constituting the antenna element ANT is what is called an “inverted F type”. The conductive wiring pattern 73 is formed of, for example, a conductive material such as copper. The conductive wiring pattern 73 is coated with, for example, an insulating material or the like to prevent corrosion of a portion exposed to the outside of the housing 2. A configuration is also possible.

The dielectric member 72 is fixed so as to be in close contact with the wall surface of the concave portion 4a of the lower cover 4 corresponding to the area where the conductive wiring pattern 73 of the lower cover 4 is formed. This dielectric member 7
2 is made of a dielectric material having a predetermined relative permittivity, for example, an inorganic material such as ceramic or glass, or an organic material such as epoxy or Teflon.

As a method of fixing the lower cover 4 of the dielectric member 72 to the concave portion 4a, for example, a method of bonding using an insulating adhesive can be adopted. Also, the dielectric member 72
Since the power supply wiring pattern 73a is formed on the surface of the concave portion 4a of the lower lid 4 for fixing the dielectric member 72 so as to protrude from the surface, an appropriate spot facing the lower surface which is the fixing surface of the dielectric member 72 is provided. It is preferable to form them.

If, for example, a material having a high relative dielectric constant is disposed as the dielectric member 72, the effect of shortening the wavelength of the antenna element ANT is increased, and the length of the resonator of the antenna element ANT can be shortened and the antenna element ANT can be reduced in size. Becomes possible. vice versa,
If a material having a low relative dielectric constant is arranged as the dielectric member 72, the resonator length of the antenna element ANT can be increased.

FIG. 27 shows an example of a model for calculating the input impedance characteristics of the antenna element ANT of the high-frequency signal processing device 71 having the above configuration using an electromagnetic field simulator. In FIG. 27, the arrow J corresponds to the direction of the arrow J in FIG. 21, and the model of the antenna element ANT is
A dielectric 92 corresponding to a part of the top cover 3 of the housing 2;
The dielectric 93 corresponding to a part of the lower cover 4, the dielectrics 94 and 95 corresponding to the dielectric member 72 adjacent to the dielectrics 92 and 93, and the dielectric corresponding to the conductive wiring pattern 73. A conductive wiring pattern 91 provided for the body 93 and the dielectric 95, and a conductive wiring pattern 91a provided for the dielectric 95 corresponding to the power supply wiring pattern 73a are provided.

FIG. 28 is a graph showing the results of calculating the input impedance characteristics of the antenna element ANT using an electromagnetic field simulator using the model of the antenna element ANT as shown in FIG. Note that the antenna element ANT
Width L ₁₀ of, and about 20 mm, the relative dielectric constant εr of the dielectric 92 and 93 corresponding to the upper lid 3 and the lower lid 4 2.9, and the dielectric loss tangent tanδ and 0.0025. Further, the relative permittivity εr of the dielectrics 94 and 95 corresponding to the dielectric member 72
Was set to 50 and the dielectric loss tangent tan δ was set to 0.005. FIG.
As can be seen from FIG. 7, the resonance frequency of the antenna element ANT is approximately 6 GHz. The resonance frequency and band are
The design can be made freely by changing the resonator length of the antenna element ANT, the material and thickness of the dielectric member 72, and the like.

The high-frequency signal processing device 71 having the above configuration is applied to, for example, IEEE 802.11.
An electronic device such as an information device such as a personal computer and an audio device as a wireless LAN card based on the standard. Such an electronic device is usually provided with an insertion port for mounting the card-like high-frequency signal processing device 71 in a housing of the electronic device. For example, FIG.
As shown in (a), a card-like high-frequency signal processing device 71 is inserted through an insertion port 104 provided in a housing 101 of an electronic device, and a high-frequency signal is connected to a connection terminal 103 of a connector 102 provided in the housing 101. The connection terminal 75 formed at the end of the housing 2 of the signal processing device 71 comes into contact, and the high-frequency signal processing device 71 and the electronic device are electrically connected.

In most cases, the casing 101 of such an electronic device has a structure provided with a metal shield for preventing electromagnetic waves. Therefore, for example, when the high-frequency signal processing device 71 is housed in the housing 101 including the antenna element ATN portion of the high-frequency signal processing device 71 in a state where the high-frequency signal processing device 71 is mounted on the electronic device, reception of radio waves as an antenna element And / or the radiation may not be satisfactorily reflected by the metal shield of the housing 101.

In this embodiment, the high-frequency signal processing device 71
Conductive pattern 73 constituting the antenna element ATN of FIG.
Is formed on the end of the housing 2 of the high-frequency signal processing device 71 on the side opposite to the side on which the connection terminals 75 are formed, and is formed in a planar shape. Therefore, for example, as shown in FIG. 29B, the high-frequency signal processing device 71 is mounted on the connector 102 in the housing 101 while the high-frequency signal processing device 71 is mounted on the connector 102.
Only one antenna element ATN portion can protrude out of the housing 101. Alternatively, only the antenna element ATN can be exposed to a free space outside the housing without projecting. By projecting or exposing only the antenna element ATN portion of the high-frequency signal processing device 71 to the outside of the housing 101, the influence of the metal shield applied to the housing 101 can be avoided as much as possible. It has a configuration that facilitates reception and radiation.

As described above, according to this embodiment, the antenna element AT
The antenna element ATN is provided integrally with the high-frequency signal processing device 71 so as to form the antenna element ATN so that the antenna element ATN has a higher frequency than the case where a chip-shaped antenna component is externally attached to the housing 2. The area and volume of the signal processing device 71 can be reduced, and the thickness of the housing 2 can be reduced. Also, by providing a dielectric member 75 on the lower cover 4 of the housing 2 corresponding to the formation region of the conductive wiring pattern 73 constituting the antenna element ATN, the antenna element A having an arbitrary characteristic can be obtained.
The TN can be designed, and the resonator length of the antenna element ANT can be arbitrarily adjusted. That is, the relative permittivity of the dielectric member 72 may be selected according to the size and shape of the high-frequency signal processing device 71 to be manufactured.
It can be said that the range of TN design is expanded.

In this embodiment, the dielectric member 72 is provided in the vicinity of the conductive wiring pattern 73 constituting the antenna element ATN. However, the antenna element ATN having desired characteristics can be formed without providing the dielectric member 72. Where this is possible, the dielectric member 72 is of course unnecessary. Further, even when the dielectric member 72 is not provided, the case 2 which is a dielectric
The characteristics of the antenna element ATN can be adjusted by partially adjusting the thickness of the formation region of the (lower lid 4) where the conductive wiring pattern 73 forming the antenna element ATN is formed. That is, the design value of the thickness of the housing 2 may be freely changed according to the characteristics desired for the antenna element ATN. Furthermore, according to the present embodiment, since the conductive wiring pattern 73 constituting the antenna element ATN is formed on the outer surface on one end side of the housing 2 in a plane, the high-frequency signal processing device 71 is inserted into the electronic device. Also, only the antenna element ATN can be exposed to the outside from the insertion opening of the electronic device, and it is easy to receive and radiate radio waves.

In this embodiment, the antenna element AT
The conductive wiring pattern 73 constituting N is formed on the outer surface of the housing 2. However, depending on the required specifications, for example, the surface of the recess 3 a of the upper lid 3 or the surface of the recess 4 a of the lower lid 4 may be formed depending on the required specifications. It is also possible to form.

In the high-frequency signal processing device 71 according to the present embodiment, the circuit component 80 functioning as a band-pass filter is directly mounted on the lower cover 4.
As described in the embodiment, a band-pass filter may be directly formed on the housing 2 by a conductive wiring pattern instead of the circuit component 80. With such a configuration, the high-frequency signal processing device 71
Can be further reduced in size and thickness.

Although various embodiments of the present invention have been described above, the present invention is not limited to the above embodiments.
In the above-described embodiment, a case has been described in which a band-pass filter or an antenna element is used as a circuit element directly formed on the housing. However, a passive element other than such a passive element can be formed. An active element having a power supply other than the element can be formed. Further, by appropriately combining the techniques described in the above-described embodiments, the thickness, weight, and size of the housing 2 can be further reduced.

[0079]

According to the present invention, a high-frequency signal processing device having a built-in circuit component constituting a circuit performing a predetermined function, for example, a module integrated by integrating circuit elements such as a filter and an antenna, is reduced in thickness. It is possible to reduce the size and weight.

[Brief description of the drawings]

FIG. 1 is a diagram showing a structure of a high-frequency signal processing device according to a first embodiment of the present invention, wherein (a) is a plan view,
(B) is a sectional view.

FIG. 2 is a configuration diagram illustrating an example of a high-frequency circuit.

FIG. 3 is a diagram illustrating a configuration of a bandpass filter formed on a housing.

FIG. 4 is a graph showing frequency characteristics of a band-pass filter formed on a housing.

5A and 5B are diagrams showing a structure of a high-frequency signal processing device according to a second embodiment of the present invention, wherein FIG. 5A is a plan view,
(B) is a sectional view.

FIG. 6 is a plan view showing a configuration example of a lower lid.

FIG. 7 is a graph showing frequency characteristics of a band-pass filter formed on a housing.

FIG. 8 is a diagram showing a structure of a high-frequency signal processing device according to a third embodiment of the present invention, wherein (a) is a plan view,
(B) is a sectional view.

FIG. 9 is a plan view showing a configuration of a bandpass filter formed on a housing.

FIG. 10 is a sectional view taken along line AA of FIG. 9;

FIG. 11 is a sectional view taken along line BB of FIG. 9;

FIG. 12 is a sectional view taken along the line CC of FIG. 9;

FIG. 13 is a sectional view taken along the line DD in FIG. 9;

FIG. 14 is a plan view showing a model in which a shield structure of a bandpass filter according to a third embodiment of the present invention is simplified.

15 is a cross-sectional view taken along the line EE of FIG.

FIG. 16 is a cross-sectional view taken along the line FF of the band-pass filter shown in FIG. 14;

FIG. 17 is a graph showing frequency characteristics of the bandpass filter shown in FIG.

FIGS. 18A and 18B are diagrams showing a structure of a high-frequency signal processing device according to a fourth embodiment of the present invention, wherein FIG. 18A is a plan view and FIG.

FIG. 19 is a plan view illustrating a configuration of a bandpass filter formed on a housing.

FIG. 20 is a graph showing frequency characteristics of a band-pass filter formed on a housing.

21A and 21B are diagrams illustrating a structure of a high-frequency signal processing device according to a fifth embodiment of the present invention, wherein FIG. 21A is a plan view and FIG. 21B is a cross-sectional view.

FIG. 22 is a plan view showing details of a structure of a portion where an antenna pattern is formed in FIG. 21;

23 is a diagram of the antenna pattern of FIG. 22 as viewed from the direction of arrow G.

24 is a sectional view of the antenna pattern of FIG. 22 taken along the line HH.

25 is a diagram of the antenna pattern of FIG. 22 as viewed from the direction of arrow J.

26 is a diagram of the antenna pattern of FIG. 22 as viewed from the direction of arrow K.

FIG. 27 is a diagram showing a model for simulating the impedance characteristic of the antenna according to the fifth embodiment of the present invention.

FIG. 28 is a graph showing input impedance characteristics of the antenna of the model shown in FIG. 27;

FIG. 29 is a diagram for explaining a method of mounting the high-frequency signal processing device provided with the antenna element to the housing 101.

FIG. 30 is a diagram illustrating an example of a structure of a modularized high-frequency signal processing device.

31 is a diagram illustrating an example of a configuration of a high-frequency signal processing device obtained by adding an antenna function to the high-frequency signal processing device illustrated in FIG. 30;

[Explanation of symbols]

1, 31, 41, 61, 71 ... high-frequency signal processing device, 2
... case, 3 ... top cover, 3a ... recess, 4 ... bottom cover, 4a ... recess, 6,7 ... IC chip, 9 ... capacitor, 10 ... coil, 11 ... ground layer, 13 ... conductive wiring, 16, 17 ... Ground layer, BPF1, BPF2, BPF3 ... distributed constant bandpass filter.

Claims (26)

[Claims] 1. A housing made of a dielectric material having an accommodating portion for accommodating a high-frequency circuit, and a circuit element constituted by a conductive wiring pattern formed directly on the housing and connected to the high-frequency circuit. High frequency signal processing device. 2. The apparatus according to claim 1, wherein said circuit element is a filter.
2. The high-frequency signal processing device according to 1. 3. The high-frequency signal processing device according to claim 2, wherein said circuit element is a band-pass filter. 4. The high-frequency signal processing device according to claim 2, wherein a ground layer made of a conductive material is formed on a back surface of the housing on which the conductive wiring pattern is formed. 5. The high-frequency signal processing device according to claim 2, wherein the conductive wiring pattern is formed on an inner surface of the housing. 6. The high-frequency signal processing device according to claim 2, wherein the thickness of the housing in a region where the conductive wiring pattern is formed is different from the thickness of other portions. 7. A thickness of the housing in a region where the conductive wiring pattern is formed is larger than thicknesses of other portions.
2. The high-frequency signal processing device according to 1. 8. The high-frequency signal processing device according to claim 6, wherein a partially thick portion of the case in which the conductive wiring pattern is formed reinforces the mechanical strength of the case. 9. The high-frequency signal processing device according to claim 6, wherein an insertion loss characteristic of said filter circuit is determined by a thickness of a partially thick portion of a region where said conductive wiring pattern is formed in said housing. 10. The high-frequency signal processing device according to claim 6, wherein a partially thick portion of the conductive wiring pattern forming region of the housing projects into the housing portion. 11. The high-frequency signal processing device according to claim 2, wherein said filter comprises a distributed constant resonator. 12. The filter comprises the housing, a conductive wiring pattern having a predetermined pattern formed on the housing, and a conductive material formed on a back surface of the housing on which the conductive wiring pattern is formed. The high-frequency signal processing device according to claim 2, further comprising a ground layer, and a space existing on the conductive wiring pattern. 13. The signal processing circuit according to claim 1, wherein a material for forming the housing is a liquid crystal polymer. 14. The housing according to claim 1, wherein said housing is an injection molded product.
4. The high-frequency signal processing device according to 3. 15. The circuit component constituting the high-frequency circuit,
2. The high-frequency signal processing device according to claim 1, wherein the high-frequency signal processing device is mounted as a bare chip on an inner surface of a housing portion of the housing. 16. The high-frequency signal processing device according to claim 1, wherein said high-frequency circuit processes a high-frequency signal in a microwave band or a millimeter-wave band or higher. 17. The housing has first and second flat lids, wherein the first and second lids have a joining portion joined to an outer peripheral portion thereof, and A concave portion is provided on at least one of the opposing surfaces of the first and second lids,
The high-frequency signal processing device according to claim 1, wherein the housing portion is configured by the concave portion. 18. A method according to claim 18, wherein the conductive wiring pattern is directly formed on at least one of the opposing surfaces of the first and second lids, and a circuit component constituting the high-frequency circuit is mounted. 18. The high-frequency signal processing device according to item 17. 19. The high-frequency signal processing device according to claim 17, wherein said first and second lids are formed by injection molding. 20. A circuit component constituting the high-frequency circuit,
The high-frequency signal processing device according to claim 17, wherein the high-frequency signal processing device is directly mounted on a facing surface of the first and / or second lid as a bare chip. 21. At least one of the opposing surfaces of the first and second lids has a projecting portion projecting from the opposing surface, the thickness of which is partially increased. The high-frequency signal processing device according to claim 17, wherein a conductive wiring pattern is formed. 22. The casing has first and second flat lids, wherein the first and second lids have joints joined to an outer peripheral portion thereof, and A concave portion is provided on at least one of the opposing surfaces of the first and second lids,
The high-frequency signal processing device according to claim 1, wherein the housing portion is configured by the concave portion. 23. A high-frequency circuit, comprising: a baseband signal processing circuit for processing a baseband signal; a high-frequency signal processing circuit for modulating the baseband signal into a high-frequency signal or demodulating the high-frequency signal into a baseband signal; A band that passes only a high-frequency signal of a predetermined frequency band and outputs to the high-frequency signal processing circuit, or a band that passes only a high-frequency signal of a predetermined frequency band and outputs the signal output from the high-frequency signal processing circuit. And a pass filter circuit, wherein the band-pass filter circuit is directly formed on the housing by a conductive wiring pattern, and the baseband signal processing circuit and the high-frequency signal processing circuit are chip-shaped in a housing portion of the housing. 2. The high-frequency signal processing device according to claim 1, which is mounted as a circuit component. 24. A step of forming first and second lids each having a joint portion joined to the outer peripheral portion and having a concave portion on at least one of the opposing surfaces facing each other; A step of directly forming a conductive wiring pattern constituting a circuit element connected to the high-frequency circuit and a conductive wiring electrically connecting the high-frequency circuit to at least one of the second lids; First and second
A method for manufacturing a high-frequency signal processing device, comprising: a step of mounting the cover in one concave portion of the cover; and a step of joining a joint of the first and second covers. 25. The method according to claim 25, wherein the step of bonding the first and second lids is performed by an ultrasonic welding method. 26. The step of molding the first and second lids includes the step of forming at least one of the opposing surfaces of the first and second lids from the opposing surface having a partially increased thickness. 26. The method of manufacturing a high-frequency signal processing device according to claim 25, wherein the step of forming the projecting portion integrally and forming the conductive wiring pattern directly forms the conductive wiring pattern on the upper surface of the projecting portion.