JP2001217443A - Semiconductor device and its manufacturing method, solar cell and its manufacturing method, and optical device provided with semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device which can be handled without any trouble in a wide range of from a low to a high temperature and manufactured at a low cost and its manufacturing method in which semiconductor thin films are separated from a semiconductor substrate and transferred onto a board. SOLUTION: Semiconductor thin films 3, 4, and 5 are formed on an invar alloy substrate 14 through the intermediary of an adhesive layer 15 for the formation of a semiconductor device.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly, to a method for manufacturing a semiconductor device by peeling a semiconductor thin film from a semiconductor substrate and transferring the semiconductor thin film to the substrate. Even under temperature conditions, there is no hindrance in handling, and it relates to a semiconductor element and a method for manufacturing the same which can be manufactured at low cost.In particular, a solar cell element is peeled off from a semiconductor substrate, transferred to a substrate and manufactured, and from a low temperature. The present invention relates to a solar cell which can be manufactured at low cost without any trouble even under temperature conditions up to a high temperature, and a method for manufacturing the same.

According to the present invention, the semiconductor thin film is peeled off from the semiconductor substrate, transferred to the substrate and manufactured, and can be manufactured at a low cost without any trouble even in a temperature condition from a low temperature to a high temperature. The present invention relates to an optical element using a semiconductor element.

[0003]

2. Description of the Related Art In order to enable reuse of a silicon substrate or to add a new function, a silicon solar cell element is formed on a porous silicon layer formed on the surface of the silicon substrate, and the silicon solar cell formed is formed. There is known a method of manufacturing a silicon solar cell by peeling a battery element from a silicon substrate at a portion of a porous silicon layer and transferring the battery element onto the substrate (for example, Japanese Patent Application Laid-Open No. H8-213645).

In this case, conventionally, a plastic film substrate was generally bonded to a silicon solar cell element and peeled off from the silicon substrate.

[0005]

However, the silicon solar cell adhered to the plastic film substrate and peeled off from the silicon substrate does not cause any problem when handled at room temperature, however, it does not have a problem in a high temperature atmosphere, for example, at 90 ° C. In this atmosphere, the thickness of the plastic film as the substrate is sufficiently large compared to the thickness of the silicon solar cell element, so that the silicon solar cell element may be broken due to thermal expansion of the plastic film substrate. Was.

[0006] Such a problem occurs in a substrate formed of a material having a coefficient of linear thermal expansion close to that of a semiconductor material such as silicon such as molybdenum or tungsten.
The problem can be solved by bonding the silicon solar cell element and peeling it off from the silicon substrate to form a silicon solar cell, but molybdenum, tungsten, etc. have a small reserve on the earth and are valuable resources. Therefore, there is a problem that the material cost is high.

Glass also has a linear thermal expansion coefficient close to that of semiconductor materials such as silicon.
There is a problem that a thin glass plate is easily broken and is difficult to handle.

[0008] Such a problem is not limited to a solar cell using silicon as a semiconductor material.
In addition, the problem is not limited to the solar cell but also to other types of semiconductor devices such as MOS.

Therefore, the present invention provides a method of manufacturing a semiconductor thin film by peeling it from a semiconductor substrate and transferring the semiconductor thin film to a substrate, and has no trouble in handling even at a low temperature to a high temperature and at low cost. It is an object of the present invention to provide a semiconductor device that can be manufactured and a method for manufacturing the same.

Another object of the present invention is to manufacture a solar cell element by peeling it off from a semiconductor substrate and transferring it to a substrate, so that the solar cell element can be manufactured at a low cost without any trouble even in a temperature condition from a low temperature to a high temperature. And a method of manufacturing the same.

Still another object of the present invention is to produce a semiconductor thin film by peeling it off from a semiconductor substrate and transferring it to a substrate, so that it can be manufactured at low cost without any trouble even under temperature conditions from low to high temperatures. It is an object of the present invention to provide an optical element using a semiconductor element which can be used.

[0012]

Means for Solving the Problems The present inventor has made intensive studies to achieve the above object. As a result, the object of the present invention is to provide a semiconductor thin film having an invar type alloy substrate via an adhesive layer. Have been achieved by the semiconductor element formed in the above.

[0013] Si, Ge, GaAs, GaSb, ZnT
e and other semiconductor materials have a coefficient of linear thermal expansion of 2 to 8
At about × 10 ⁻⁶ / ° C., it is extremely small, and minimizes the influence of thermal stress applied to the semiconductor thin film from the substrate. It is necessary to use a substrate having a thermal expansion coefficient close to that of a semiconductor material forming a semiconductor thin film in a temperature range of -150 ° C. to 300 ° C., for example, under high temperature conditions. Has a coefficient of linear thermal expansion near zero near room temperature,
Even at around 150 ° C, which exceeds the range of low linear thermal expansion coefficient, 3 ×
At 10 ⁻⁶ / ° C., the coefficient of linear thermal expansion is close to the coefficient of linear thermal expansion of the semiconductor material, and the coefficient of linear thermal expansion of silicon, a typical semiconductor material, is 2.5
× 10 ⁻⁶ / ° C., and by adjusting the alloy composition, the coefficient of linear thermal expansion of the Invar alloy can be matched with the coefficient of linear thermal expansion of the semiconductor material used for the semiconductor thin film. Through the adhesive layer,
When forming a semiconductor thin film on an Invar type alloy substrate,
Under a temperature condition from a low temperature to a high temperature, it becomes possible to minimize the influence of the thermal stress applied to the semiconductor thin film from the substrate. The present invention is based on such findings.

According to the present invention, the substrate of the semiconductor element has a coefficient of linear thermal expansion close to the coefficient of linear thermal expansion of the semiconductor material under a temperature condition of low to high temperature, and a temperature condition of low to high temperature. Uses an invar-type alloy substrate whose coefficient of thermal expansion can be controlled to a value close to the coefficient of linear thermal expansion of the semiconductor material. Therefore, the effect of thermal stress on the semiconductor thin film from the substrate under low to high temperature conditions Can be minimized, and it is possible to obtain a semiconductor element that does not cause a trouble in handling even under a temperature condition from a low temperature to a high temperature.Moreover, the invar-type alloy is compared with molybdenum and tungsten. However, since the material cost is low, a semiconductor element can be manufactured at low cost.

Further, according to the present invention, since a highly flexible invar-type alloy substrate is used as the substrate, a semiconductor element having a shape suitable for the intended use can be formed. By forming a semiconductor thin film on an Invar-type alloy substrate via an adhesive layer and using it for the light-receiving surface of the CCD, a single inexpensive lens is used to generate a CCD imaging device with lens aberration corrected. Or to a concave spherical Invar alloy substrate,
By forming a semiconductor thin film via an adhesive layer and using it for the light emitting surface of the surface emitting laser, the laser light can be converged without using a lens, or it can be formed on a convex spherical Invar type alloy substrate. By forming a semiconductor thin film via an adhesive layer and using it for the light emitting surface of a surface emitting laser, laser emission can be viewed at a wide angle, or the inner surface of a semi-cylindrical invar type alloy substrate In addition, by forming a semiconductor thin film via an adhesive layer and using the semiconductor thin film on a light emitting surface of a surface emitting laser, it becomes possible to focus laser light on a line.

Further, according to the present invention, since the invar type alloy having high thermal conductivity is used as the substrate, the invar type alloy substrate can serve as a heat radiating plate, and the semiconductor element can be used as a heat radiating plate. Heat radiation measures such as providing fins can be eliminated.

In a preferred embodiment of the present invention, the thickness of the Invar alloy substrate is 2 mm or less.

In a further preferred embodiment of the present invention, the invar type alloy substrate is made of an iron-nickel alloy, an iron-platinum alloy, an iron-palladium alloy, an iron-cobalt-chromium alloy, an iron-nickel-chromium alloy, A coefficient of linear thermal expansion selected from the group consisting of a nickel-manganese alloy, an iron-cobalt-chromium alloy, an antiferromagnetic chromium-iron-manganese alloy having a coefficient of linear expansion of 1 × 10 ⁻⁵ / ° C. or less, and an amorphous alloy; It is formed of a material having a ^{density of 10-5} / C or less.

In a further preferred aspect of the present invention, the Invar alloy substrate is formed of an iron-nickel alloy.

[0020] In a further preferred embodiment of the present invention, the adhesive layer is formed of an adhesive material selected from the group consisting of an epoxy resin, a silicone resin, a polyimide resin solder and ethylene vinyl acetate.

In a further preferred aspect of the present invention, the surface of the Invar alloy substrate on the semiconductor thin film side has a texture structure.

According to a further preferred embodiment of the present invention, the surface of the Invar type alloy substrate on the side of the semiconductor thin film has a texture structure. Can be irregularly reflected, and the conversion efficiency can be improved.

In a further preferred aspect of the present invention, a transparent protective plate is provided on the at least one semiconductor thin film on the side opposite to the Invar-type alloy substrate.

In a further preferred aspect of the present invention, the transparent protective plate is formed of plastic.

According to a further preferred embodiment of the present invention, a transparent plastic is used as a protective plate, but an invar-type alloy substrate is adhered to the surface opposite to the semiconductor thin film to support the semiconductor thin film. Therefore, even if stress is applied from a protective plate made of plastic due to a temperature change, it is possible to effectively prevent the semiconductor thin film from cracking.

In a further preferred aspect of the present invention, the at least one semiconductor thin film is formed of silicon.

The object of the present invention is also to provide a method for forming a porous layer on a substrate, forming at least one semiconductor thin film on the porous layer, and bonding an invar type alloy substrate to the semiconductor thin film. The method is achieved by a method for manufacturing a semiconductor device, wherein the substrate is peeled off at the portion of the porous layer.

According to the present invention, the substrate of the semiconductor element has a thermal expansion coefficient close to the thermal expansion coefficient of the semiconductor material under a temperature condition from a low temperature to a high temperature, and a temperature condition from a low temperature to a high temperature. Uses an invar-type alloy substrate whose coefficient of thermal expansion can be controlled to a value close to the coefficient of linear thermal expansion of the semiconductor material. Therefore, the effect of thermal stress on the semiconductor thin film from the substrate under low to high temperature conditions Can be minimized, and it is possible to obtain a semiconductor element that does not cause a trouble in handling even under a temperature condition from a low temperature to a high temperature.Moreover, the invar-type alloy is compared with molybdenum and tungsten. However, since the material cost is low, a semiconductor element can be manufactured at low cost.

[0029] In a preferred embodiment of the present invention, a transparent protective plate is adhered to the surface of the at least one semiconductor thin film from which the substrate has been peeled off, whereby a semiconductor element is manufactured.

The object of the present invention is also to form a porous layer on a substrate, form at least one semiconductor thin film on the porous layer, and provide a transparent protective plate on the at least one semiconductor thin film. After bonding, the substrate is peeled off at the portion of the porous layer, and an invar-type alloy substrate is bonded to a surface of the at least one semiconductor thin film from which the substrate has been peeled off. Achieved by the method.

According to the present invention, at least one semiconductor thin film is transferred to a transparent protective plate, but it is an invar-type alloy substrate that functions as a substrate of a semiconductor element, and a low-temperature Has a coefficient of linear thermal expansion close to that of the semiconductor material under temperature conditions from high to high, and has a coefficient of linear thermal expansion close to the coefficient of linear thermal expansion of the semiconductor material under temperature conditions from low to high temperatures. Controllable invar type alloy substrate,
A semiconductor element that can minimize the effect of thermal stress on a semiconductor thin film from a substrate under low to high temperatures, and does not hinder handling even at low to high temperatures In addition, since the material cost of the invar alloy is lower than that of molybdenum or tungsten, a semiconductor element can be manufactured at low cost.

In a further preferred embodiment of the present invention, the invar-type alloy substrate is manufactured by rolling an invar-type alloy plate with a rolling roller having a texture structure on a peripheral surface and a rolling roller having a smooth peripheral surface. You.

According to a further preferred embodiment of the present invention, when a semiconductor element is used in a solar cell or the like, a surface which preferably diffuses incident light, which is preferably required, can be formed at the time of forming an Invar type alloy substrate. Will be possible.

In a further preferred embodiment of the present invention, the thickness of the Invar alloy substrate is set to 2 mm or less.

In a further preferred embodiment of the present invention, the invar type alloy substrate is made of an iron-nickel alloy, an iron-platinum alloy, an iron-palladium alloy, an iron-cobalt-chromium alloy, an iron-nickel-chromium alloy, Formed of a material having a coefficient of linear thermal expansion of 1 × 10 ⁻⁵ / ° C. or less selected from the group consisting of a nickel-manganese alloy, an iron-cobalt-chromium alloy, an antiferromagnetic chromium-iron-manganese alloy, and an amorphous alloy I have.

In a further preferred aspect of the present invention, the Invar-type alloy substrate is formed of an iron-nickel alloy.

[0037] In a further preferred embodiment of the present invention, the invar-type alloy substrate is made of an adhesive material selected from the group consisting of epoxy resin, silicone resin, polyimide resin solder and ethylene vinyl acetate.
A semiconductor device is manufactured by bonding to the at least one semiconductor thin film.

[0038] In a further preferred embodiment of the present invention, the transparent protective plate is formed of plastic.

According to a further preferred embodiment of the present invention, a transparent plastic is used as a protective plate, but an invar type alloy substrate is adhered to a surface opposite to the semiconductor thin film to support the semiconductor thin film. Therefore, even if stress is applied from a protective plate made of plastic due to a temperature change, it is possible to effectively prevent the semiconductor thin film from cracking.

[0040] In a further preferred aspect of the present invention, the at least one semiconductor thin film is formed of silicon.

In a further preferred embodiment of the present invention, the porous layer is formed of a porous silicon layer, and a semiconductor device is manufactured.

[0042] In a further preferred aspect of the present invention, the substrate is formed of silicon.

The above object of the present invention is also achieved by a solar cell having at least one semiconductor thin film formed on an Invar alloy substrate via an adhesive layer, and a patterned electrode on the semiconductor thin film. You.

According to the present invention, as a solar cell substrate,
Under a temperature condition from low temperature to high temperature, it has a coefficient of linear thermal expansion close to that of the semiconductor material, and under a temperature condition from low temperature to high temperature, the coefficient of linear thermal expansion is close to the coefficient of linear thermal expansion of the semiconductor material. Since the Invar type alloy substrate that can be controlled to a value is used, under the temperature condition from low temperature to high temperature, it is possible to minimize the influence of the thermal stress received from the substrate on the solar cell element composed of the semiconductor thin film, Even under low to high temperature conditions, it is possible to obtain solar cells that do not interfere with handling.Invar-type alloys have lower material costs compared to molybdenum and tungsten, so low cost Thus, a solar cell can be obtained.

In a preferred embodiment of the present invention, a transparent protective plate is provided on the at least one semiconductor thin film on a side opposite to the Invar alloy substrate.

In a further preferred aspect of the present invention, the thickness of the Invar alloy substrate is 2 mm or less.

In a further preferred embodiment of the present invention, the invar type alloy substrate is made of an iron-nickel alloy, an iron-platinum alloy, an iron-palladium alloy, an iron-cobalt-chromium alloy, an iron-nickel-chromium alloy, Formed of a material having a coefficient of linear thermal expansion of 1 × 10 ⁻⁵ / ° C. or less selected from the group consisting of a nickel-manganese alloy, an iron-cobalt-chromium alloy, an antiferromagnetic chromium-iron-manganese alloy, and an amorphous alloy I have.

In a further preferred aspect of the present invention, the Invar type alloy substrate is formed of an iron-nickel alloy.

[0049] In a further preferred aspect of the present invention, the adhesive layer is formed of an adhesive material selected from the group consisting of an epoxy resin, a silicone resin, a polyimide resin solder and ethylene vinyl acetate.

In a further preferred aspect of the present invention, the surface of the invar type alloy substrate on the semiconductor thin film side has a texture structure.

According to a further preferred embodiment of the present invention, since the surface of the invar type alloy substrate on the semiconductor thin film side has a texture structure, incident light can be irregularly reflected, and conversion efficiency can be improved. It becomes possible.

[0052] In a further preferred embodiment of the present invention, the transparent protective plate is formed of plastic.

According to a further preferred embodiment of the present invention, a transparent plastic is used as a protective plate, but an invar-type alloy substrate is adhered to the opposite surface of the semiconductor thin film to support the semiconductor thin film. Therefore, even if stress is applied from a protective plate made of plastic due to a temperature change, it is possible to effectively prevent the semiconductor thin film from cracking.

[0054] In a further preferred aspect of the present invention, the at least one semiconductor thin film is formed of silicon.

[0055] In a further preferred aspect of the present invention, the substrate is formed of silicon.

The object of the present invention is also to form a porous layer on a substrate, form at least one semiconductor thin film on the porous layer, and pattern an electrode on the at least one semiconductor thin film. Then, after bonding the Invar-type alloy substrate, the substrate is peeled off at the portion of the porous layer.

According to the present invention, as a solar cell substrate,
Under a temperature condition from low temperature to high temperature, it has a coefficient of linear thermal expansion close to that of the semiconductor material, and under a temperature condition from low temperature to high temperature, the coefficient of linear thermal expansion is close to the coefficient of linear thermal expansion of the semiconductor material. Since the Invar type alloy substrate that can be controlled to a value is used, under the temperature condition from low temperature to high temperature, it is possible to minimize the influence of the thermal stress received from the substrate on the solar cell element composed of the semiconductor thin film, Even under low to high temperature conditions, it is possible to obtain solar cells that do not interfere with handling.Invar-type alloys have lower material costs compared to molybdenum and tungsten, so low cost Thus, a solar cell can be manufactured.

In a preferred embodiment of the present invention, a solar cell is manufactured by bonding a transparent protective plate to the surface of the at least one semiconductor thin film from which the substrate has been peeled off.

The object of the present invention is also to form a porous layer on a substrate, form at least one semiconductor thin film on the porous layer, and pattern an electrode on the at least one semiconductor thin film. And, further, after bonding a transparent protective plate, at the portion of the porous layer, the substrate is peeled off,
This is achieved by a method for manufacturing a solar cell, comprising bonding an invar-type alloy substrate to a surface of the at least one semiconductor thin film from which the substrate has been peeled off.

According to the present invention, as a substrate for a solar cell,
Under a temperature condition from low temperature to high temperature, it has a coefficient of linear thermal expansion close to that of the semiconductor material, and under a temperature condition from low temperature to high temperature, the coefficient of linear thermal expansion is close to the coefficient of linear thermal expansion of the semiconductor material. Since the Invar type alloy substrate that can be controlled to a value is used, under the temperature condition from low temperature to high temperature, it is possible to minimize the influence of the thermal stress received from the substrate on the solar cell element composed of the semiconductor thin film, Even under low to high temperature conditions, it is possible to obtain solar cells that do not interfere with handling.Invar-type alloys have lower material costs compared to molybdenum and tungsten, so low cost Thus, a solar cell can be manufactured.

In a further preferred embodiment of the present invention, the invar-type alloy substrate is manufactured by rolling an invar-type alloy plate with a rolling roller having a texture structure on a peripheral surface and a rolling roller having a smooth peripheral surface. You.

According to a further preferred embodiment of the present invention, the invar alloy plate is rolled by a rolling roller having a texture structure on the peripheral surface and a rolling roller having a smooth peripheral surface to produce an invar alloy substrate. Therefore, the surface of the Invar alloy substrate on the semiconductor thin film side has a texture structure, and the incident light can be irregularly reflected on the surface, and the conversion efficiency can be improved.

In a further preferred embodiment of the present invention, the thickness of the Invar alloy substrate is set to 2 mm or less.

In a further preferred embodiment of the present invention, the invar type alloy substrate is made of an iron-nickel alloy, an iron-platinum alloy, an iron-palladium alloy, an iron-cobalt-chromium alloy, an iron-nickel-chromium alloy, Formed of a material having a coefficient of linear thermal expansion of 1 × 10 ⁻⁵ / ° C. or less selected from the group consisting of a nickel-manganese alloy, an iron-cobalt-chromium alloy, an antiferromagnetic chromium-iron-manganese alloy, and an amorphous alloy I have.

In a further preferred aspect of the present invention, the Invar type alloy substrate is formed of an iron-nickel alloy.

In a further preferred embodiment of the present invention, the invar type alloy substrate is formed by using an adhesive material selected from the group consisting of an epoxy resin, a silicone resin, a polyimide resin solder and ethylene vinyl acetate.
By bonding, a solar cell is manufactured.

In a further preferred embodiment of the present invention, the transparent protective plate is formed of plastic.

According to a further preferred embodiment of the present invention, a transparent plastic is used as a protective plate, but an invar-type alloy substrate is adhered to the opposite surface of the semiconductor thin film to support the semiconductor thin film. Therefore, even if stress is applied from a protective plate made of plastic due to a temperature change, it is possible to effectively prevent the semiconductor thin film from cracking.

[0069] In a further preferred aspect of the present invention, the at least one semiconductor thin film is formed of silicon.

[0070] In a further preferred embodiment of the present invention, the porous layer is formed by a porous silicon layer to manufacture a solar cell.

In a further preferred embodiment of the present invention, the substrate is formed of silicon.

The object of the present invention is also to provide a CCD having a light receiving surface of a CCD formed by forming a semiconductor thin film on a concave spherical Invar type alloy substrate via an adhesive layer.
This is achieved by an image sensor.

In a CCD imaging device having a flat light receiving surface, the chromatic aberration of the lens is corrected by combining a large number of lenses or by using an aspherical lens. According to the present invention, an invar type alloy is usable. Due to its flexibility, even if one inexpensive lens is used, the lens of the lens can be adjusted so that the light receiving surface is focused by forming the invar-type alloy substrate into a desired concave spherical shape. Can be corrected, and the cost of the CCD imaging device can be significantly reduced.

[0074] In a preferred embodiment of the present invention, the thickness of the Invar alloy substrate is set to 2 mm or less.

In a further preferred aspect of the present invention, the invar type alloy substrate is made of an iron-nickel alloy, an iron-platinum alloy, an iron-palladium alloy, an iron-cobalt-chromium alloy, an iron-nickel-chromium alloy, Formed of a material having a coefficient of linear thermal expansion of 1 × 10 ⁻⁵ / ° C. or less selected from the group consisting of a nickel-manganese alloy, an iron-cobalt-chromium alloy, an antiferromagnetic chromium-iron-manganese alloy, and an amorphous alloy I have.

In a further preferred aspect of the present invention, the Invar alloy substrate is formed of an iron-nickel alloy.

In a further preferred embodiment of the present invention, the adhesive layer is formed of an adhesive material selected from the group consisting of an epoxy resin, a silicone resin, a polyimide resin solder and ethylene vinyl acetate.

In a further preferred aspect of the present invention, the transparent protective plate is formed of plastic.

In a further preferred aspect of the present invention, the at least one semiconductor thin film is formed of silicon.

In a further preferred embodiment of the present invention, the porous layer is formed by a porous silicon layer.

[0081] In a further preferred aspect of the present invention, the substrate is formed of silicon.

The object of the present invention is also to provide a surface emitting laser characterized in that a semiconductor thin film is formed on a concave spherical invar type alloy substrate via an adhesive layer to form a light emitting surface of a surface emitting laser. Achieved by

According to the present invention, since the Invar-type alloy has flexibility, the Invar-type alloy substrate is formed into a desired concave spherical shape, and a semiconductor thin film is formed on the surface of the substrate through an adhesive layer. By forming the laser beam, it becomes possible to converge the laser beam to a desired point without using a lens.

The object of the present invention is also to provide a surface emitting laser characterized in that a semiconductor thin film is formed on a convex spherical Invar type alloy substrate via an adhesive layer to form a light emitting surface of a surface emitting laser. Achieved by

According to the present invention, since the Invar-type alloy has flexibility, the Invar-type alloy substrate is formed into a desired concave spherical shape, and the semiconductor thin film is formed on the surface thereof with an adhesive layer interposed therebetween. The laser light can be dispersed and emitted as desired by forming.

The object of the present invention is also characterized in that a semiconductor thin film is formed on an inner surface of a semicylindrical invar type alloy substrate via an adhesive layer to constitute a light emitting surface of a surface emitting laser. This is achieved by a surface emitting laser.

According to the present invention, since the Invar type alloy has flexibility, the Invar type alloy substrate is formed into a desired semi-cylindrical surface shape, and the semiconductor thin film is formed on the inner surface thereof through the adhesive layer. Is formed, it becomes possible to converge the laser light on a desired line.

In a preferred embodiment of the present invention, the thickness of the Invar alloy substrate is set to 2 mm or less.

In a further preferred embodiment of the present invention, the invar type alloy substrate is made of an iron-nickel alloy, an iron-platinum alloy, an iron-palladium alloy, an iron-cobalt-chromium alloy, an iron-nickel-chromium alloy, Formed of a material having a coefficient of linear thermal expansion of 1 × 10 ⁻⁵ / ° C. or less selected from the group consisting of a nickel-manganese alloy, an iron-cobalt-chromium alloy, an antiferromagnetic chromium-iron-manganese alloy, and an amorphous alloy I have.

In a further preferred aspect of the present invention, the Invar-type alloy substrate is formed of an iron-nickel alloy.

In a further preferred aspect of the present invention, the adhesive layer is formed of an adhesive material selected from the group consisting of an epoxy resin, a silicone resin, a polyimide resin solder and ethylene vinyl acetate.

In a further preferred aspect of the present invention, the transparent protective plate is formed of plastic.

[0093] In a further preferred aspect of the present invention, the at least one semiconductor thin film is formed of silicon.

[0094] In a further preferred embodiment of the present invention, the porous layer is formed of a porous silicon layer.

[0095] In a further preferred aspect of the present invention, the substrate is formed of silicon.

As the invar type alloy usable in the present invention, an iron-nickel alloy is most typical, but not limited to the iron-nickel alloy, all materials exhibiting invar characteristics are used.
It can be used as the Invar type alloy substrate of the present invention. In order to use Invar type alloy as a substrate for semiconductor thin films, considering soldering work etc.,
It is required that the semiconductor thin film is not affected by thermal stress even at a temperature of about 250 ° C., but all invar alloys known at present have such characteristics. In practice, it is particularly desirable that the difference between the coefficient of linear thermal expansion of the Invar type and the coefficient of linear thermal expansion of the semiconductor material be small in the high temperature region compared to the low temperature region of the alloy. Such a requirement can be satisfied by selecting an alloy composition in which the shifted iron is enriched. For example, the semiconductor thin film should not be affected by thermal stress even in a temperature range of 300 to 350 ° C. Can be.

The above object of the present invention is also achieved by a semiconductor device in which at least one semiconductor thin film is formed on a Kovar alloy substrate via an adhesive layer.

According to the present invention, the effect of thermal stress on the semiconductor thin film from the substrate can be suppressed to a minimum under a temperature condition from a low temperature to a high temperature. It is possible to obtain a semiconductor element which does not cause troubles.

In a preferred embodiment of the present invention, the Kovar alloy substrate contains iron, cobalt and nickel as main components, and has an iron content of 30 to 70 atom%,
The sum of the contents of cobalt and nickel is 30 to 60
It is formed of a Kovar alloy having a content of other atoms of 10% atom or less and a linear thermal expansion coefficient of 1 × 10 ⁻⁵ / ° C. or less.

In a further preferred embodiment of the present invention, the adhesive layer is formed of an adhesive material selected from the group consisting of an epoxy resin, a silicone resin, a polyimide resin solder and ethylene vinyl acetate.

In a further preferred aspect of the present invention, the surface of the Kovar alloy substrate on the semiconductor thin film side has a texture structure.

In a further preferred embodiment of the present invention, the semiconductor device further comprises a transparent protective plate on the at least one semiconductor thin film on a side opposite to the Kovar alloy substrate.

In a further preferred aspect of the present invention, the transparent protective plate is formed of plastic.

In a further preferred aspect of the present invention, the at least one semiconductor thin film is formed of silicon.

The object of the present invention is also to form a porous layer on a substrate, form at least one semiconductor thin film on the porous layer, and bond a Kovar alloy substrate to the at least one semiconductor thin film. Then, the substrate is separated at the portion of the porous layer.

According to the present invention, it is possible to minimize the influence of the thermal stress applied to the semiconductor thin film from the substrate under the temperature conditions from a low temperature to a high temperature. It is possible to obtain a semiconductor element which does not cause troubles.

In a preferred embodiment of the present invention, a transparent protective plate is further adhered to a surface of the at least one semiconductor thin film from which the substrate has been peeled off.
A semiconductor device is manufactured.

[0108] The object of the present invention is also to form a porous layer on a substrate, form at least one semiconductor thin film on the porous layer, and provide a transparent protective plate on the at least one semiconductor thin film. After the bonding, the substrate is peeled off at the portion of the porous layer, and a Kovar alloy substrate is bonded to a surface of the at least one semiconductor thin film from which the substrate has been peeled off. Achieved by

According to the present invention, it is possible to minimize the influence of the thermal stress applied to the semiconductor thin film from the substrate under the temperature conditions from a low temperature to a high temperature. It is possible to obtain a semiconductor element which does not cause troubles.

In a preferred embodiment of the present invention, a Kovar alloy plate is rolled by a rolling roller having a texture structure on a peripheral surface and a rolling roller having a smooth peripheral surface.
A semiconductor device is manufactured by manufacturing the Kovar alloy substrate.

In a further preferred embodiment of the present invention, the Kovar alloy substrate contains iron, cobalt and nickel as main components and has an iron content of 30 to 70 at.
m%, the sum of the contents of cobalt and nickel is 30 to 60 atom%, and the content of other elements is 10% at
om or less, and is formed of a Kovar alloy having a coefficient of linear thermal expansion of 1 × 10 ⁻⁵ / ° C. or less.

[0112] In a further preferred aspect of the present invention, the Kovar alloy substrate is bonded to the at least one semiconductor thin film with an adhesive material selected from the group consisting of epoxy resin, silicone resin, polyimide resin solder and ethylene vinyl acetate. By bonding, a semiconductor element is manufactured.

In a further preferred aspect of the present invention, the transparent protective plate is formed of plastic.

In a further preferred aspect of the present invention, the at least one semiconductor thin film is formed of silicon. In a further preferred embodiment of the present invention, the porous layer is a porous silicon layer.

In a further preferred aspect of the present invention, the substrate is formed of silicon.

The object of the present invention is also characterized in that at least one semiconductor thin film formed on a Kovar alloy substrate via an adhesive layer and a patterned electrode is provided on the semiconductor thin film. Achieved by batteries.

According to the present invention, under the temperature condition from low temperature to high temperature, it is possible to minimize the influence of the thermal stress applied from the substrate to the solar cell element composed of the semiconductor thin film, and to reduce the temperature from low temperature to high temperature. Even under the conditions, it is possible to obtain a solar cell that does not hinder handling.

In a preferred embodiment of the present invention, a transparent protective plate is provided on the at least one semiconductor thin film on the side opposite to the Kovar alloy substrate.

In a further preferred embodiment of the present invention, the Kovar alloy substrate contains iron, cobalt and nickel as main components and has an iron content of 30 to 70 at.
m%, the sum of the contents of cobalt and nickel is 30 to 60 atom%, and the content of other elements is 10% at
om or less, and is formed of a Kovar alloy having a coefficient of linear thermal expansion of 1 × 10 ⁻⁵ / ° C. or less.

In a further preferred embodiment of the present invention, the adhesive layer is formed of an adhesive material selected from the group consisting of an epoxy resin, a silicone resin, a polyimide resin solder and ethylene vinyl acetate.

In a further preferred aspect of the present invention, the surface of the Kovar alloy substrate on the side of the semiconductor thin film has a texture structure.

In a further preferred aspect of the present invention, the transparent protective plate is formed of plastic.

In a further preferred aspect of the present invention, the at least one semiconductor thin film is formed of silicon.

In a further preferred embodiment of the present invention, the substrate is formed of silicon.

[0125] The object of the present invention is also to form a porous layer on a substrate, form at least one semiconductor thin film on the porous layer, and pattern an electrode on the at least one semiconductor thin film. Then, after bonding the Kovar alloy substrate, the substrate is peeled off at the portion of the porous layer.

According to the present invention, under a temperature condition from a low temperature to a high temperature, it is possible to minimize the influence of the thermal stress applied from the substrate to the solar cell element composed of the semiconductor thin film, and to reduce the temperature from the low temperature to the high temperature. Even under the conditions, it becomes possible to manufacture a solar cell which does not cause trouble in handling.

In a preferred embodiment of the present invention, a solar cell is manufactured by bonding a transparent protective plate to the surface of the at least one semiconductor thin film from which the substrate has been peeled off.

The object of the present invention is also to form a porous layer on a substrate, form at least one semiconductor thin film on the porous layer, and pattern an electrode on the at least one semiconductor thin film. And, further, after bonding a transparent protective plate, at the portion of the porous layer, the substrate is peeled off,
This is achieved by a method for manufacturing a solar cell, wherein a Kovar alloy substrate is bonded to a surface of the at least one semiconductor thin film from which the substrate has been peeled off.

According to the present invention, it is possible to minimize the influence of the thermal stress received from the substrate on the solar cell element composed of the semiconductor thin film under the temperature condition from low temperature to high temperature. Even under the conditions, it becomes possible to manufacture a solar cell which does not cause trouble in handling.

In a preferred embodiment of the present invention, the invar-type alloy substrate is manufactured by rolling an invar-type alloy plate with a rolling roller having a texture structure on a peripheral surface and a rolling roller having a smooth peripheral surface. By
Solar cells are manufactured.

In a further preferred embodiment of the present invention, the Kovar alloy substrate contains iron, cobalt and nickel as main components and has an iron content of 30 to 70 at.
m%, the sum of the contents of cobalt and nickel is 30 to 60 atom%, and the content of other elements is 10% at
om or less, and is formed of a Kovar alloy having a coefficient of linear thermal expansion of 1 × 10 ⁻⁵ / ° C. or less.

In a further preferred embodiment of the present invention, the Kovar alloy substrate is bonded by using an adhesive material selected from the group consisting of epoxy resin, silicone resin, polyimide resin solder and ethylene vinyl acetate. Solar cells are manufactured.

In a further preferred aspect of the present invention, the transparent protective plate is formed of plastic.

In a further preferred aspect of the present invention, the at least one semiconductor thin film is formed of silicon.

In a further preferred embodiment of the present invention, the porous layer is a porous silicon layer.

In a further preferred embodiment of the present invention, the substrate is formed of silicon.

[0137]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings.

FIGS. 1 to 7 are process diagrams showing a manufacturing process of a single-cell thin-film single-crystal silicon solar cell according to an embodiment of the present invention.

As shown in FIG. 1, first, a p-type impurity such as boron is added to form 0.01 to 0.02 Ω · c.
For example, a porous silicon layer 2 is formed on the surface of a p-type single crystal silicon substrate 1 having a specific resistance of m by anodization.
Is formed. That is, for example, at a current density of 0.5 to 3 mA / cm 2 for 2 to 10 minutes, for example, 8 minutes, an epitaxial layer having excellent crystallinity is formed on the porous silicon layer 2. One anodizing treatment is performed to form a first porous silicon layer with low porosity (not shown), and then at a current density of, for example, 3 to 20 mA / cm 2 for 2 to 10 minutes, for example. After a second anodizing treatment for 8 minutes to form a second porous silicon layer of medium porosity (not shown), for example a current density of 40 to 300 mA / cm 2 Then, a third anodizing treatment is performed for several seconds to form a third porous silicon layer (not shown) having a large porosity. The thickness of the porous silicon layer 2 is 0.5 to 10 μm, preferably about 8 μm.
It is. Here, the anodization method is a method in which an electric current is applied in a hydrofluoric acid solution using the silicon substrate 1 as an anode. Examples of the anodization method include “Surface Technology Vol. 46, No. 5, p8-13, 1995 "Anodic formation of porous silicon""is known.

In this method, a silicon substrate 1 on which a porous silicon layer 2 is to be formed is arranged between two electrolytic solution tanks, and a platinum electrode connected to a DC power supply is provided in the two electrolytic solution tanks. An electrolytic solution is put into two electrolytic solution tanks, and a DC voltage is applied using the silicon substrate 1 as an anode and the platinum electrode as a cathode to erode one surface of the silicon substrate 1 to make it porous. . As the electrolytic solution, for example,
An electrolytic solution having a volume ratio of hydrofluoric acid to ethyl alcohol of 3: 1 to 1: 1 is preferably used.

Next, as shown in FIG. 2, the surface of the porous silicon layer 2 is subjected to a hydrogen annealing treatment at 1050 to 1200 ° C., for example, 1100 ° C. for 5 to 30 minutes, to form a porous silicon layer. After many holes formed on the surface of the layer 2 are closed, SiH ₄ , SiC
Using a gas such as l ₄ , SiCl ₃ , SiHCl ₃ , SiH ₂ Cl ₂ at 1000 to 1150 ° C., for example 1070 ° C., p
⁺ -Type layer 3 is epitaxially grown to a thickness of 0.1 to 1 μm, and then p-type layer 4 is doped
¹⁴ to so that ^{10 1 8} / cubic centimeter, a thickness of 1 to 50 [mu] m, are continuously epitaxially grown. Thereafter, an n ⁺ -type layer 5 serving as a cathode is formed to a thickness of 0.1 to 1 μm by diffusion or epitaxial growth.

Here, in the hydrogen annealing treatment, the epitaxial growth and the diffusion process, the silicon atoms in the porous silicon layer 2 are moved and rearranged. As a result, the third porous silicon layer has extremely low tensile strength. Then, it is converted into the release layer 6. The release layer 6 has such a tensile strength that the p ⁺ -type layer 3 and the p-type layer 4 do not partly or entirely separate from the silicon substrate 1.

Further, as shown in FIG. 3, the n ⁺ -type layer 5 is formed in a predetermined pattern using an excimer laser or the like.
Is removed by laser ablation, and the p-type layer 4 serving as the anode is exposed. In the present embodiment, the n ⁺ -type layer 5 serving as the cathode is removed by laser ablation capable of fine patterning, and the p ^{+ serving} as the anode is removed.
Since the mold layer 4 is exposed, a desired electrode pattern can be formed at low cost and with a reduced ineffective electrode area without using a mask such as a photoresist.

Next, as shown in FIG. 4, 800 to 100 to protect the exposed pn ⁺ bonds.
Thermal oxidation at 0 ° C. to form a silicon oxide film 7,
Further, a titanium oxide antireflection film 8 is formed.

Thereafter, as shown in FIG. 5, an electrode window is opened by laser ablation using an excimer laser or the like, and, for example, a metal paste is applied to an opening formed in the titanium oxide antireflection film 8 by a screen. Printing is performed to form an anode 9a and a cathode 9b.

Next, the transparent plastic film 11 is adhered by using the adhesive 10, and then the silicon substrate 1 is immersed in a solution such as water or ethyl alcohol. The substrate 1 is irradiated. As a result, the peel strength of the release layer 6 is reduced by the energy of the ultrasonic wave,
Is destroyed, and the silicon substrate 1 is separated from the solar cell element 12 as shown in FIG.

Since the porous silicon layer 2 remains on the back surface of the solar cell element 12 from which the silicon substrate 1 has been peeled off, using a mixed solution of hydrofluoric acid and nitric acid by a rotary silicon etching method or the like. After removing the porous silicon layer 2 on the back surface of the solar cell element 12, an invar type alloy substrate 14 having a texture structure 13 on the surface and made of an iron-nickel alloy is bonded to an adhesive 15 made of an epoxy resin.
To form a single-cell thin-film single-crystal silicon solar cell 16 as shown in FIG.

Single cell type thin film single crystal silicon solar cell 1
The porous silicon layer 2 remaining on the surface of the silicon substrate 1 peeled off from the silicon substrate 6 is removed by electrolytic polishing, rotary silicon etching, or the like, and the silicon substrate 1 is reused.

According to the present embodiment, the semiconductor material has a coefficient of linear thermal expansion close to the coefficient of linear thermal expansion of a semiconductor material under a temperature condition from low to high temperatures, and has a coefficient of linear thermal expansion under a temperature condition from low to high temperatures. Is used as the substrate of the solar cell element 12 using an invar-type alloy substrate 14 made of an iron-nickel alloy that can be controlled to a value close to the coefficient of linear thermal expansion of the semiconductor material. The effect of thermal stress on the solar cell element 12 from the substrate can be suppressed to a minimum, and it is possible to obtain a solar cell 16 that does not hinder handling even under temperature conditions from low to high temperatures. .

Further, according to the present embodiment, the adhesive 10
The transparent plastic film 11 is adhered using a single cell type thin film single crystal silicon solar cell 16.
Is bonded to the surface on the opposite side to support the solar cell element 12, even if the plastic film 11 expands and contracts due to a temperature change and stress is applied to the solar cell element 12. In addition, it is possible to effectively prevent the solar cell element 12 from being cracked.

Further, according to the present embodiment, since the invar type alloy substrate 14 made of an iron-nickel alloy, which is lower in material cost than molybdenum or tungsten, is used as the substrate of the solar cell element 12, The solar cell 16 can be manufactured at a low cost.

Furthermore, according to this embodiment, since the invar type alloy substrate 14 has the texture structure 13 on its surface, the incident light can be irregularly reflected by the texture structure, and the conversion efficiency can be improved. It becomes possible to do.

FIGS. 8 to 14 are process diagrams showing a manufacturing process of a back-contact single-cell thin-film single-crystal silicon solar cell according to another preferred embodiment of the present invention.

As shown in FIGS. 8 to 11, FIG.
4, a porous silicon layer 2, a p ⁺ -type layer 3, a p-type layer 4, an n ⁺ -type layer 5, and a silicon oxide film are formed on the surface of a p-type single-crystal silicon substrate 1 in the same manner as shown in FIG. 7 and a titanium oxide antireflection film 8 are formed in this order.

Then, as shown in FIG. 12, an electrode window is opened by laser ablation using an excimer laser or the like, and, for example, a metal paste is screen-printed in the opening formed in silicon oxide film 7. Thus, an anode 9a and a cathode 9b are formed. Here, anode 9
In order to reflect as much as possible of the light a and the cathode 9b which are incident from the back surface of the solar cell and transmitted through the solar cell, it is desirable that the area is large.

Further, after an invar type alloy substrate 14 made of an iron-nickel alloy and having a texture structure 13 on its surface is bonded by using an adhesive 15 made of ethylene vinyl acetate, the silicon substrate 1 is made of water or Immersed in a solution such as ethyl alcohol, for example, 25k
Ultrasonic waves of 600 Hz are irradiated on the silicon substrate 1. As a result, the energy of the ultrasonic waves causes the release layer 6
13 is weakened, and the peeling layer 6 is broken.
As shown in FIG.
Peeled off from

Since the porous silicon layer 2 remains on the back surface of the solar cell element 12 from which the silicon substrate 1 has been peeled off, a mixed solution of hydrofluoric acid and nitric acid or the like is used to carry out a rotary silicon etching method or the like. Then, the porous silicon layer 2 on the back surface of the solar cell element 12 is removed, and the p ⁺ type layer 3 is exposed.

Next, on the exposed surface of the p ⁺ type layer 3,
By applying a solution containing titanium oxide (TiOx) and irradiating ultraviolet rays, the coating film is dried, and the titanium oxide is oxidized or reduced to a thickness of 10%.
A titanium oxide antireflection film 8 of mainly 100 nm to 100 nm titanium dioxide is formed on the surface of the p ⁺ type layer 3. Further, a plastic film 18 is adhered to the surface of the titanium oxide antireflection film 8 using an adhesive 10,
As shown in FIG. 14, a back contact type thin film single crystal silicon solar cell 19 is produced.

According to the present embodiment, the semiconductor material has a coefficient of linear thermal expansion close to the coefficient of linear thermal expansion of a semiconductor material under temperature conditions from low to high temperatures, and has a coefficient of linear thermal expansion under temperature conditions from low to high temperatures. The solar cell element 12 is bonded to the adhesive 1 with an invar type alloy substrate 14 made of an iron-nickel alloy that can be controlled to a value close to the linear thermal expansion coefficient of the semiconductor material.
0, and peeled off from the silicon substrate 1, and the invar-type alloy substrate 14 is used as the substrate of the solar cell element 12. Therefore, under the temperature condition from low temperature to high temperature,
The effect of thermal stress on the solar cell element 12 from the substrate can be minimized, and the back-contact thin-film single-crystal silicon solar cell 19 does not hinder handling even at low to high temperatures. Can be obtained.

Further, according to the present embodiment, the adhesive 10
, A transparent plastic film 11 is adhered, and an invar-type alloy substrate 14 is adhered to the opposite surface of the back contact type thin film single crystal silicon solar cell 19 to support the solar cell element 12. Therefore, the plastic film 11 expands and contracts due to a temperature change,
Even if stress is applied to the solar cell element 12, the solar cell element 1
2 can be effectively prevented from being cracked.

Further, according to this embodiment, since the invar type alloy substrate 14 made of an iron-nickel alloy, which is lower in material cost than molybdenum, tungsten, or the like, is used as the substrate of the solar cell element 12, The solar cell 16 can be manufactured at a low cost.

Further, according to the present embodiment, since the invar type alloy substrate 14 has the texture structure 13 on the surface thereof, incident light can be irregularly reflected by the texture structure, and the conversion efficiency can be improved. It becomes possible to do.

According to this embodiment, the back contact type thin film single crystal silicon solar cell 19 is configured so that light is incident on the plastic film 18 and there is no electrode on the incident surface. The conversion efficiency can be greatly improved.

FIG. 15 is a schematic vertical sectional view of an invar type alloy substrate manufacturing apparatus.

As shown in FIG. 15, the invar-type alloy substrate manufacturing apparatus according to the present embodiment includes a pair of rolling rollers 30, 31 and a pair of rolling rollers 32, 33. , 33 have a smooth peripheral surface, and only the peripheral surface of the rolling roller 32 has a texture structure.

The invar alloy plate 35 is rolled by a pair of rolling rollers 30 and 31 and further rolled by a pair of rolling rollers 32 and 33 to produce an invar alloy substrate 36. Since the peripheral surface has a texture structure, the invar type alloy substrate 36
A texture structure is transferred to one surface of the substrate, and one surface has a texture structure.
6 is obtained.

According to the present embodiment, when the invar-type alloy substrate 36 is formed, it is possible to simultaneously form a surface for irregularly reflecting light incident on the solar cell, which is efficient.

FIG. 16 is a schematic sectional view of a CCD image pickup device according to a preferred embodiment of the present invention.

As shown in FIG. 16, the CCD image pickup device 40 includes a concave spherical invar type alloy substrate 41 and a CCD light receiving device 42 made of a silicon thin film. It is formed on the inner surface of a concave spherical Invar type alloy substrate 41 via a layer 43.

In general, a digital camera or the like uses a CCD image pickup device having a planar light receiving surface.
Since lenses have chromatic aberration, images are formed on a flat light-receiving surface by combining a large number of lenses or using an aspherical lens, which inevitably increases costs. ing. However, the Invar alloy substrate 41 has flexibility, and according to this embodiment, the Invar alloy substrate 41 is formed in a concave spherical shape, and the silicon thin film is formed on the inner surface thereof through the adhesive layer 43. Consisting of C
Since the CD light receiving element 42 is formed, even when one inexpensive lens is used, by adjusting the curvature of the concave spherical invar type alloy substrate 41, the CCD light receiving element 4 can be formed.
2, it is possible to form an image, and it is possible to reduce the cost of the CCD image pickup device.

FIG. 17 is a schematic sectional view of a surface emitting laser according to still another preferred embodiment of the present invention.

As shown in FIG. 17, the surface emitting laser 5
Reference numeral 0 denotes a concave spherical Invar alloy substrate 51 and a laser light emitting element 52 made of a silicon thin film. The laser light emitting element 52 is provided with a concave spherical Invar type alloy substrate 53 through an adhesive layer 53 made of epoxy resin. It is formed on the inner surface of the alloy substrate 51.

The invar type alloy substrate 51 has flexibility. According to this embodiment, the invar type alloy substrate 51 is formed in a concave spherical shape, and the inner surface thereof is provided with an adhesive layer 53 therebetween.
Since the laser light emitting element 52 made of a silicon thin film is formed, the laser can be focused on a desired point by adjusting the curvature of the concave spherical invar type alloy substrate 51.

FIG. 18 is a schematic sectional view of a surface emitting laser according to still another preferred embodiment of the present invention.

As shown in FIG. 18, the surface emitting laser 6
Reference numeral 0 denotes a convex spherical Invar type alloy substrate 61 and a laser light emitting element 62 made of a silicon thin film. The laser light emitting element 62 is provided with a concave spherical Invar type substrate via an adhesive layer 63 made of epoxy resin. It is formed on the outer surface of the alloy substrate 61.

The invar type alloy substrate 61 has flexibility. According to this embodiment, the invar type alloy substrate 61 is formed in a concave spherical shape, and the outer surface thereof is provided with an adhesive layer 63 via an adhesive layer 63.
Since the laser light-emitting element 62 made of a silicon thin film is formed, the laser can be dispersed and emitted as desired by adjusting the curvature of the convex spherical Invar alloy substrate 61.

FIG. 19 is a schematic sectional view of a surface emitting laser according to still another preferred embodiment of the present invention.

As shown in FIG. 19, the surface emitting laser 7
Numeral 0 is provided with a semi-cylindrical invar type alloy substrate 71 and a laser light emitting element 72 made of a silicon thin film. The laser light emitting element 72 is provided with a concave spherical invar type via an adhesive layer 73 made of epoxy resin. It is formed on the inner surface of the alloy substrate 71.

The invar-type alloy substrate 61 has flexibility. According to this embodiment, the invar-type alloy substrate 71 is formed in a semi-cylindrical shape, and the inner surface of the
Since the laser light emitting element 72 made of a silicon thin film is formed, the laser can be focused on a desired line by adjusting the curvature of the concave spherical invar type alloy substrate 71.

[0180]

EXAMPLES In order to clarify the effects of the present invention, comparative examples and examples are given below.

COMPARATIVE EXAMPLE 1 An electrolytic solution having a volume ratio of hydrofluoric acid to ethyl alcohol of 1: 1 was used.
At a current density of 7 mA / cm 2, the surface of a p-type single crystal silicon substrate having a specific resistance of 2 Ω · cm
The first anodizing treatment was performed over a period of minutes to form a first porous silicon layer having a low porosity.

Next, a second anodizing treatment was performed at a current density of 200 mA / cm 2 for several seconds to form a second porous silicon layer having a high porosity.

Further, at the current density of 7 mA / cm 2, a third anodizing treatment is performed for 8 minutes to form a second porous silicon layer under the second porous silicon layer having a large porosity.
A third porous silicon layer having a low porosity was formed.

Next, an annealing treatment is performed in a hydrogen atmosphere at 1100 ° C. to fill the holes of the second porous silicon layer and form a release layer inside the second porous silicon layer. A p-type silicon single crystal thin film having a thickness of 10 μm was epitaxially grown on the surface of the second porous silicon layer at 1050 ° C. by the CVD method.

Further, the surface of the p-type silicon single crystal thin film has a coefficient of linear thermal expansion of 7 × 10 ⁻⁵ / ° C. and a thickness of 3 mm.
Was bonded using a UV curable resin, the release layer was broken by ultrasonic waves, and the silicon single crystal thin film was separated from the single crystal silicon substrate to obtain Sample # 1.

Comparative Example 2 A p-type silicon single crystal thin film having a thickness of 10 μm was epitaxially grown in the same manner as in Comparative Example 1, and thereafter,
The linear thermal expansion coefficient is 1.5
An ethylene vinyl acetate substrate having a thickness of 0.4 mm was heated and bonded at × 10 ⁻⁴ / ° C., and the release layer was broken by ultrasonic waves in the same manner as in Comparative Example 1 to obtain a silicon single substrate. The crystal thin film was peeled off from the single crystal silicon substrate to obtain a sample # 2.

Example 1 A 10 μm thick p-type silicon single crystal thin film was epitaxially grown in the same
The coefficient of linear thermal expansion is 1 × 1 on the surface of
An invar-type alloy substrate made of an iron-nickel alloy having a thickness of 0.1 mm at 0 ⁻⁶ / ° C. is coated with an epoxy resin.
By bonding, the peeling layer was broken by ultrasonic waves in exactly the same manner as in Comparative Example 1, and the silicon single crystal thin film was peeled from the single crystal silicon substrate to obtain Sample # 3.

The samples # 1 to # 3 were visually observed.
Upon observation, no crack was observed at room temperature. However, when samples # 1 to # 3 were heated to 80 ° C. and returned to room temperature again, and visually observed, no cracks were observed in sample # 3. Cracks were observed.

According to Comparative Examples 1 and 2 and Example 1,
In a sample # 3 according to the present invention obtained by bonding a silicon single crystal thin film to a substrate made of an Invar type alloy and peeling the silicon single crystal thin film from the single crystal silicon substrate,
It was found that cracking did not occur in the silicon single crystal thin film even when heated to 80 ° C.

Comparative Example 3 An electrolytic solution having a volume ratio of hydrofluoric acid to ethyl alcohol of 1: 1 was used.
At a current density of 7 mA / cm 2, the surface of a p-type single crystal silicon substrate having a specific resistance of 2 Ω · cm
The first anodizing treatment was performed over a period of minutes to form a first porous silicon layer having a low porosity.

Next, a second anodizing treatment was performed at a current density of 200 mA / cm 2 for several seconds to form a second porous silicon layer having a large porosity.

Further, at the current density of 7 mA / cm 2, a third anodizing treatment is performed for 8 minutes to form a second porous silicon layer under the second porous silicon layer having a high porosity.
A third porous silicon layer having a low porosity was formed.

Next, annealing is performed in a hydrogen atmosphere at 1100 ° C. to fill the holes of the second porous silicon layer and form a peeling layer inside the second porous silicon layer. A p-type silicon single crystal thin film having a thickness of 10 μm was epitaxially grown on the surface of the second porous silicon layer at 1050 ° C. by the CVD method.

After the N-type diffusion of phosphorus on the surface of the p-type silicon single crystal thin film to form a PN junction and the formation of an anti-reflection film on the surface, the single crystal silicon substrate was heated to 150 ° C. Was deposited to form a comb-shaped surface electrode.

Next, a thickness of 0.25 mm was applied to the surface of the electrode.
The transparent polyethylene terephthalate substrate is bonded with a UV-curable resin, and the release layer is broken by ultrasonic waves in exactly the same manner as in Comparative Example 1 to separate the single-crystal silicon thin-film solar cell element from the single-crystal silicon substrate. did.

Further, after the separation layer on the surface of the single-crystal silicon thin film solar cell element separated from the single-crystal silicon substrate was removed by etching in a mixed aqueous solution of hydrofluoric acid, nitric acid and acetic acid, aluminum was removed. .3 μm, 1
Vapor deposition at 50 ° C. to form back electrode, thickness 0.25
mm polyethylene terephthalate substrate was bonded with an adhesive containing a carbon filler.

Next, a portion of the transparent plastic substrate corresponding to the surface electrode portion was opened with a window, and the surface electrode was taken out to obtain a single crystal silicon thin film solar cell (sample # 4).

Example 2 A single-crystal silicon thin-film solar cell element was formed in exactly the same manner as in Comparative Example 3, a transparent polyethylene terephthalate substrate having a thickness of 0.25 mm was bonded with a UV-curable resin, and the peeling layer was formed by ultrasonic waves. The single-crystal silicon thin-film solar cell element was broken and separated from the single-crystal silicon substrate. Further, the separation layer on the surface of the single-crystal silicon thin-film solar cell element separated from the single-crystal silicon substrate was treated with hydrofluoric acid and nitric acid. After removal by etching in a mixed aqueous solution of acetic acid and acetic acid, a silver paste is applied, and a conductive epoxy resin containing a carbon filler is used to form a layer of iron-nickel alloy having a thickness of 0.1 mm.
It was bonded to a 2 mm Invar alloy substrate.

Next, a portion of the transparent plastic substrate corresponding to the electrode portion was opened with a window, and the surface electrode was taken out.
A single-crystal silicon thin-film solar cell (sample # 5) was obtained.

The samples # 4 and # 5 were visually inspected.
Upon observation, no crack was observed at room temperature. However, when samples # 4 and # 5 were heated to 70 ° C. and returned to room temperature again and visually observed, no cracks were observed in sample # 5, but cracks were observed in sample # 4. Was observed.

From Comparative Example 3 and Example 2, sample # 5 of the present invention obtained by bonding a silicon single crystal thin film to a substrate made of an Invar type alloy and peeling the silicon single crystal thin film from the single crystal silicon substrate was obtained. In this case, it was found that cracking did not occur in the silicon single crystal thin film even when heated to 70 ° C.

Example 3 An electrolytic solution having a volume ratio of hydrofluoric acid to ethyl alcohol of 2: 1 was used.
At a current density of 7 mA / cm 2, the surface of a p-type single crystal silicon substrate having a specific resistance of 2 Ω · cm
The first anodizing treatment was performed over a period of minutes to form a first porous silicon layer having a low porosity.

Next, a second anodizing treatment was performed at a current density of 100 mA / cm 2 for several seconds to form a second porous silicon layer having a large porosity.

Further, at the current density of 7 mA / cm 2, a third anodizing treatment is performed for 2 minutes to form a second porous silicon layer having a high porosity under the second porous silicon layer.
A third porous silicon layer having a low porosity was formed.

Next, annealing is performed in a hydrogen atmosphere at 1100 ° C. to fill the holes of the second porous silicon layer and form a peeling layer inside the second porous silicon layer. A p-type silicon single crystal thin film having a thickness of 10 μm was epitaxially grown on the surface of the second porous silicon layer at 1050 ° C. by the CVD method.

Further, after the surface of the p-type silicon single crystal thin film was wet-oxidized, the SiO
_A silicone resin was applied to the surface of a 1 mm-thick invar-type alloy substrate on which the _two films were formed, and the surface of a wet-oxidized p-type silicon single crystal thin film was overlapped and bonded.

Next, in exactly the same manner as in Comparative Example 1, the peeling layer was broken by ultrasonic waves and peeled from the single crystal silicon substrate.

Further, the remaining release layer was removed with a mixed aqueous solution of hydrofluoric acid and nitric acid using a spin etcher to obtain a silicon single crystal thin film (sample # 6).

When the obtained sample # 6 was visually observed, no crack was observed at room temperature. Further, sample # 6 was heated at 150 ° C. for 3 hours.
After holding for 0 minutes, the temperature was returned to room temperature, and visually observed, no crack was observed.

From Example 3, a sample # 6 of the present invention obtained by bonding a silicon single crystal thin film to a substrate made of an Invar alloy and peeling the silicon single crystal thin film from the single crystal silicon substrate was obtained. It was found that no cracks occurred in the silicon single crystal thin film even when heated to 70 ° C.

Example 4 Using an electrolytic solution having a volume ratio of hydrofluoric acid to ethyl alcohol of 1: 1 and adding 0.01 to 0.0
At a current density of 7 mA / cm 2, the surface of a p-type single crystal silicon substrate having a specific resistance of 2 Ω · cm
The first anodizing treatment was performed over a period of minutes to form a first porous silicon layer having a low porosity.

Next, a second anodizing treatment was performed at a current density of 200 mA / cm 2 for several seconds to form a second porous silicon layer having a large porosity.

Further, at the current density of 7 mA / cm 2, a third anodization treatment is performed for 8 minutes to form a second porous silicon layer having a high porosity under the second porous silicon layer.
A third porous silicon layer having a low porosity was formed.

Next, an annealing treatment is performed in a hydrogen atmosphere at 1100 ° C. to fill the holes of the second porous silicon layer and form a peeling layer inside the second porous silicon layer. A p-type silicon single crystal thin film having a thickness of 10 μm was epitaxially grown on the surface of the second porous silicon layer at 1050 ° C. by the CVD method.

Further, the surface of the p-type silicon single crystal thin film has a coefficient of linear thermal expansion of 1 × 10 ⁻⁵ / ° C. and a thickness of 1 mm.
A Kovar alloy substrate was bonded at 150 ° C. using ethylene vinyl acetate having a thickness of 50 μm, the peeling layer was broken by ultrasonic waves, and the silicon single crystal thin film was peeled from the single crystal silicon substrate. # 7 was obtained.

When the obtained sample # 7 was visually observed, no crack was observed at room temperature. Further, Sample # 7 was heated to 80 ° C., returned to room temperature, and visually observed. No crack was observed.

From Example 4, Sample # 3 of the present invention obtained by bonding a silicon single crystal thin film to a substrate made of Kovar alloy and peeling the silicon single crystal thin film from the single crystal silicon substrate, It was found that cracking did not occur in the silicon single crystal thin film even when heated to 80 ° C.

The present invention is not limited to the above-described embodiments and examples, and various modifications can be made within the scope of the invention described in the claims, which are also included in the scope of the present invention. It goes without saying that it is included.

For example, in the above embodiment, a description has been given of a solar cell, a CCD image pickup device, and a surface emitting laser. However, the present invention is not limited to the case of manufacturing a solar cell. It goes without saying that the present invention can be applied to the case of manufacturing other types of semiconductor elements.

[0220] In the above embodiments and examples, silicon is used as the semiconductor material.
Other semiconductor materials such as germanium can also be used.

Further, in the above embodiment and the above examples, an iron-nickel alloy is used as the invar alloy, but the invar alloy usable in the present invention is not limited to the iron-nickel alloy. No, iron-
Platinum alloy, iron-palladium alloy, iron-cobalt-chromium alloy, iron-nickel-chromium alloy, iron-nickel-manganese alloy, iron-cobalt-chromium alloy, antiferromagnetic chromium-iron-manganese alloy, amorphous alloy, etc. Alternatively, a / ° C material having a coefficient of linear thermal expansion of 1 × 10 ⁻⁵ or less can be used.

Further, in the above embodiment, the invar alloy substrate is used, but a Kovar alloy substrate can be used instead of the invar alloy substrate.

Further, in the above embodiment and the above examples, the invar type alloy substrate is adhered by using an adhesive made of epoxy resin. However, the adhesive is not limited to epoxy resin, and the adhesive is not limited to epoxy resin. The Invar-type alloy substrate can also be bonded with a resin, a polyimide resin, ethylene vinyl acetate, or the like.

Further, in the embodiments shown in FIGS. 1 to 7 and the embodiments shown in FIGS. 8 to 14, the invar type alloy substrate 14 having a texture structure on the surface is used. It is not always necessary to have a texture structure.

Also, in the embodiments shown in FIGS. 1 to 7 and the embodiments shown in FIGS. 8 to 14, transparent plastic films 11 and 18 are used as protective films for solar cell elements, respectively. Although not limited to transparent plastics, various transparent materials can be used.

[0226]

According to the present invention, a semiconductor thin film is peeled off from a semiconductor substrate, transferred to the substrate and manufactured, and has no trouble in handling even under a temperature condition from a low temperature to a high temperature.
It is possible to provide a semiconductor element that can be manufactured at low cost and a method for manufacturing the same.

Further, according to the present invention, a solar cell element
Peeled from the semiconductor substrate, transferred to the substrate and manufactured,
It is possible to provide a solar cell and a method for manufacturing the same that can be manufactured at low cost without any trouble in handling even under temperature conditions from low to high temperatures.

Furthermore, according to the present invention, the semiconductor thin film
Peeled from the semiconductor substrate, transferred to the substrate and manufactured,
It is possible to provide an optical element using a semiconductor element which can be manufactured at low cost without any trouble even in a temperature condition from a low temperature to a high temperature.

[Brief description of the drawings]

FIG. 1 is a process chart showing a manufacturing process of a single-cell thin-film single-crystal silicon solar cell according to a preferred embodiment of the present invention.

FIG. 2 is a process chart showing a manufacturing process of a single-cell thin-film single-crystal silicon solar cell according to a preferred embodiment of the present invention.

FIG. 3 is a process chart showing a manufacturing process of a single-cell thin-film single-crystal silicon solar cell according to a preferred embodiment of the present invention.

FIG. 4 is a process chart showing a manufacturing process of a single-cell thin-film single-crystal silicon solar cell according to a preferred embodiment of the present invention.

FIG. 5 is a process chart showing a manufacturing process of a single-cell thin-film single-crystal silicon solar cell according to a preferred embodiment of the present invention.

FIG. 6 is a process chart showing a manufacturing process of a single-cell thin-film single-crystal silicon solar cell according to a preferred embodiment of the present invention.

FIG. 7 is a process chart showing a manufacturing process of a single-cell thin-film single-crystal silicon solar cell according to a preferred embodiment of the present invention.

FIG. 8 is a process diagram showing a manufacturing process of a back-contact single-cell thin-film single-crystal silicon solar cell according to another preferred embodiment of the present invention.

FIG. 9 is a process chart showing a manufacturing process of a back-contact single-cell thin-film single-crystal silicon solar cell according to another preferred embodiment of the present invention.

FIG. 10 is a process chart showing a manufacturing process of a back-contact single-cell thin-film single-crystal silicon solar cell according to another preferred embodiment of the present invention.

FIG. 11 is a process chart showing a manufacturing process of a back-contact single-cell thin-film single-crystal silicon solar cell according to another preferred embodiment of the present invention.

FIG. 12 is a process chart showing a manufacturing process of a back-contact single-cell thin-film single-crystal silicon solar cell according to another preferred embodiment of the present invention.

FIG. 13 is a process chart showing a manufacturing process of a back-contact single-cell thin-film single-crystal silicon solar cell according to another preferred embodiment of the present invention.

FIG. 14 is a process chart showing a manufacturing process of a back contact single-cell thin-film single-crystal silicon solar cell according to another preferred embodiment of the present invention.

FIG. 15 is a schematic vertical sectional view of an invar type alloy substrate manufacturing apparatus.

FIG. 16 is a schematic sectional view of a CCD image pickup device according to a preferred embodiment of the present invention.

FIG. 17 is a schematic sectional view of a surface emitting laser according to another preferred embodiment of the present invention.

FIG. 18 is a schematic sectional view of a surface emitting laser according to another preferred embodiment of the present invention.

FIG. 19 is a schematic sectional view of a surface emitting laser according to another preferred embodiment of the present invention.

[Explanation of symbols]

Reference Signs List 1 p-type single-crystal silicon substrate 2 porous silicon layer 3 p ⁺ -type layer 4 p-type layer 5 n ⁺ -type layer 6 release layer 7 silicon oxide film 8 titanium oxide antireflection film 9 a anode 9 b cathode 10 adhesive 11 transparent plastic Film 12 Solar cell element 13 Reflective layer 14 Invar type alloy substrate 15 Adhesive 16 Single cell type thin film single crystal silicon solar cell 18 Plastic film 19 Back contact type thin film single crystal silicon solar cell 33 Rolling roller 35 Invar type alloy plate 36 Invar Type alloy substrate 40 CCD image sensor 41 Invar type alloy substrate 42 CCD light receiving element 43 Adhesive layer 50 Surface emitting laser 51 Invar type substrate 52 Laser light emitting element 53 Adhesive layer 60 Surface emitting laser 61 Invar type alloy substrate 62 Laser light emitting element 63 Adhesion Layer 70 surface emitting laser 71 Invar type alloy substrate 72 Laser light emitting element 73 Adhesive layer

Claims (94)

[Claims] 1. A semiconductor device, wherein at least one semiconductor thin film is formed on an invar alloy substrate via an adhesive layer. 2. The thickness of the Invar alloy substrate is 2 mm.
The semiconductor device according to claim 1, wherein: 3. The method according to claim 1, wherein the invar type alloy substrate comprises an iron-nickel alloy, an iron-platinum alloy, an iron-palladium alloy, an iron-cobalt-chromium alloy, an iron-nickel-chromium alloy, an iron-nickel-manganese alloy, an iron-nickel alloy. Coefficient of linear thermal expansion selected from the group consisting of cobalt-chromium alloy, antiferromagnetic chromium-iron-manganese alloy and amorphous alloy is 1 × 10
The semiconductor device according to claim 1, wherein the semiconductor device is formed of a material having a temperature of ⁻⁵ / ° C. or less. 4. The semiconductor device according to claim 3, wherein said invar-type alloy substrate is formed of an iron-nickel alloy. 5. The adhesive layer according to claim 1, wherein the adhesive layer is formed of an adhesive material selected from the group consisting of an epoxy resin, a silicone resin, a polyimide resin solder, and ethylene vinyl acetate.
13. The semiconductor device according to item 9. 6. The semiconductor device according to claim 1, wherein a surface of the Invar alloy substrate on the semiconductor thin film side has a texture structure. 7. The method according to claim 1, wherein a transparent protective plate is provided on the at least one semiconductor thin film on a side opposite to the Invar-type alloy substrate. Semiconductor element. 8. The semiconductor device according to claim 7, wherein the transparent protection plate is formed of plastic. 9. The semiconductor device according to claim 1, wherein said at least one semiconductor thin film is formed of silicon. 10. A porous layer is formed on a substrate, at least one semiconductor thin film is formed on the porous layer, and an invar-type alloy substrate is adhered to the at least one semiconductor thin film. A method of manufacturing a semiconductor device, wherein the substrate is peeled off at a portion of a porous layer. 11. The method according to claim 10, further comprising: bonding a transparent protective plate to the surface of the at least one semiconductor thin film from which the substrate has been peeled off. 12. A porous layer is formed on a substrate, at least one semiconductor thin film is formed on the porous layer, and a transparent protective plate is adhered to the at least one semiconductor thin film. A method of manufacturing a semiconductor element, wherein the substrate is peeled at a portion of a semiconductor layer, and an invar-type alloy substrate is bonded to a surface of the at least one semiconductor thin film from which the substrate has been peeled. 13. The invar-type alloy substrate is manufactured by rolling an invar-type alloy plate with a rolling roller having a texture structure on a peripheral surface and a rolling roller having a smooth peripheral surface. Any one of to 12
13. The method for manufacturing a semiconductor device according to item 10. 14. The thickness of the Invar alloy substrate is 2 m.
14. The method of manufacturing a semiconductor device according to claim 10, wherein m is equal to or less than m. 15. The invar-type alloy substrate is made of an iron-nickel alloy, an iron-platinum alloy, an iron-palladium alloy, an iron-cobalt-chromium alloy, an iron-nickel-chromium alloy, an iron-nickel alloy.
Nickel-manganese alloy, iron-cobalt-chromium alloy,
The coefficient of linear thermal expansion selected from the group consisting of antiferromagnetic chromium-iron-manganese alloys and amorphous alloys is 1 × 10
^The method for manufacturing a semiconductor device according to claim 10, wherein the semiconductor device is formed of a material having a temperature of ⁻⁵ / ° C. or less. 16. The method according to claim 1, wherein the invar-type alloy substrate is formed of an iron-nickel alloy.
6. The method for manufacturing a semiconductor device according to item 5. 17. The method according to claim 17, wherein the invar-type alloy substrate is bonded to the at least one semiconductor thin film with an adhesive material selected from the group consisting of an epoxy resin, a silicone resin, a polyimide resin solder and ethylene vinyl acetate. Any one of claims 10 to 16
13. The method for manufacturing a semiconductor device according to item 10. 18. The method according to claim 11, wherein the transparent protective plate is formed of plastic.
13. The method for manufacturing a semiconductor device according to claim 1. 19. The semiconductor device according to claim 10, wherein the at least one semiconductor thin film is formed of silicon.
19. The method for manufacturing a semiconductor device according to any one of items 18 to 18. 20. The method according to claim 10, wherein the porous layer is a porous silicon layer.
13. The method for manufacturing a semiconductor device according to item 10. 21. The semiconductor device according to claim 10, wherein the substrate is formed of silicon.
13. The method for manufacturing a semiconductor device according to item 10. 22. A solar cell, comprising: at least one semiconductor thin film formed on an Invar alloy substrate via an adhesive layer; and a patterned electrode on the semiconductor thin film. 23. The solar cell according to claim 22, further comprising a transparent protective plate provided on the at least one semiconductor thin film on a side opposite to the Invar alloy substrate. 24. A thickness of the Invar alloy substrate is 2 m.
The solar cell according to claim 22, wherein m is equal to or less than m. 25. The invar type alloy substrate according to claim 1, wherein the iron-nickel alloy, the iron-platinum alloy, the iron-palladium alloy, the iron-cobalt-chromium alloy, the iron-nickel-chromium alloy,
Nickel-manganese alloy, iron-cobalt-chromium alloy,
The coefficient of linear thermal expansion selected from the group consisting of antiferromagnetic chromium-iron-manganese alloys and amorphous alloys is 1 × 10
The solar cell according to any one of claims 22 to 24, wherein the solar cell is formed of a material having a temperature of ^-5 / C or lower. 26. The invar-type alloy substrate is formed of an iron-nickel alloy.
6. The solar cell according to 5. 27. The method according to claim 22, wherein the adhesive layer is formed of an adhesive material selected from the group consisting of epoxy resin, silicone resin, polyimide resin solder, and ethylene vinyl acetate. A solar cell according to the item. 28. The solar cell according to claim 22, wherein a surface of the invar-type alloy substrate on the side of the semiconductor thin film has a texture structure. 29. The transparent protective plate is formed of plastic.
The solar cell according to any one of the above. 30. The semiconductor device according to claim 22, wherein the at least one semiconductor thin film is formed of silicon.
30. The solar cell according to any one of claims 29 to 29. 31. The substrate according to claim 22, wherein the substrate is formed of silicon.
A solar cell according to the item. 32. A porous layer is formed on a substrate, at least one semiconductor thin film is formed on the porous layer, and an electrode is patterned on the at least one semiconductor thin film. A method for manufacturing a solar cell, comprising: after adhering an alloy substrate, separating the substrate at the porous layer portion. 33. The method according to claim 32, further comprising bonding a transparent protective plate to the surface of the at least one semiconductor thin film from which the substrate has been peeled off. 34. A porous layer is formed on a substrate, at least one semiconductor thin film is formed on the porous layer, and an electrode is patterned on the at least one semiconductor thin film. After bonding the protective plate, the substrate is peeled off at the portion of the porous layer, and an invar-type alloy substrate is bonded to a surface of the at least one semiconductor thin film from which the substrate has been peeled off. Battery manufacturing method. 35. The invar-type alloy substrate is manufactured by rolling an invar-type alloy plate with a rolling roller having a texture structure on a peripheral surface and a rolling roller having a smooth peripheral surface. Any one of to 34
A method for manufacturing a solar cell according to the item. 36. The thickness of the Invar alloy substrate is 2 m.
36. The method for manufacturing a solar cell according to claim 32, wherein m is equal to or less than m. 37. An invar-type alloy substrate comprising: an iron-nickel alloy, an iron-platinum alloy, an iron-palladium alloy, an iron-cobalt-chromium alloy, an iron-nickel-chromium alloy, an iron-nickel alloy.
Nickel-manganese alloy, iron-cobalt-chromium alloy,
The coefficient of linear thermal expansion selected from the group consisting of antiferromagnetic chromium-iron-manganese alloys and amorphous alloys is 1 × 10
^The method for producing a solar cell according to any one of claims 32 to 36, wherein the solar cell is formed of a material having a temperature of ^-5 / C or lower. 38. The substrate according to claim 3, wherein the invar-type alloy substrate is formed of an iron-nickel alloy.
8. The method for manufacturing a solar cell according to 7. 39. The invar-type alloy substrate is bonded by using an adhesive material selected from the group consisting of epoxy resin, silicone resin, polyimide resin solder and ethylene vinyl acetate. The method for manufacturing a solar cell according to any one of the above. 40. The transparent protective plate is formed of plastic.
10. The method for manufacturing a solar cell according to any one of items 9 to 9. 41. The semiconductor device according to claim 32, wherein the at least one semiconductor thin film is formed of silicon.
41. The method of manufacturing a solar cell according to any one of items 40 to 40. 42. The method according to claim 32, wherein the porous layer is a porous silicon layer.
A method for manufacturing a solar cell according to the item. 43. The semiconductor device according to claim 32, wherein the substrate is made of silicon.
A method for manufacturing a solar cell according to the item. 44. A CCD imaging device comprising a semiconductor thin film formed on a concave spherical Invar type alloy substrate via an adhesive layer to constitute a light receiving surface of a CCD. 45. The thickness of the Invar alloy substrate is 2 m.
45. The CC according to claim 44, wherein
D imaging device. 46. The invar-type alloy substrate is made of an iron-nickel alloy, an iron-platinum alloy, an iron-palladium alloy, an iron-cobalt-chromium alloy, an iron-nickel-chromium alloy, an iron-nickel alloy.
Nickel-manganese alloy, iron-cobalt-chromium alloy,
The coefficient of linear thermal expansion selected from the group consisting of antiferromagnetic chromium-iron-manganese alloys and amorphous alloys is 1 × 10
^46. The CCD imaging device according to claim 44, wherein the CCD imaging device is formed of a material having a temperature of ⁻⁵ / ° C. or less. 47. The invar-type alloy substrate is made of an iron-nickel alloy.
7. The CCD imaging device according to 6. 48. The method according to claim 44, wherein the adhesive layer is formed of an adhesive material selected from the group consisting of an epoxy resin, a silicone resin, a polyimide resin solder, and ethylene vinyl acetate. Item 12. The CCD imaging device according to Item 1. 49. The semiconductor device according to claim 44, wherein the at least one semiconductor thin film is formed of silicon.
49. The CCD imaging device according to any one of items 48 to 48. 50. The semiconductor device according to claim 44, wherein the substrate is formed of silicon.
Item 12. The CCD imaging device according to Item 1. 51. A surface emitting laser comprising a semiconductor thin film formed on a concave spherical Invar type alloy substrate via an adhesive layer to constitute a light emitting surface of a surface emitting laser. 52. A surface emitting laser characterized in that a semiconductor thin film is formed on a convex spherical Invar type alloy substrate via an adhesive layer to constitute a light emitting surface of a surface emitting laser. 53. A surface emitting laser characterized in that a semiconductor thin film is formed on an inner surface of a semi-cylindrical invar type alloy substrate via an adhesive layer to form a light emitting surface of the surface emitting laser. 54. A thickness of the Invar alloy substrate is 2 m.
54. The surface emitting laser according to claim 51, wherein m is equal to or less than m. 55. The invar-type alloy substrate is made of an iron-nickel alloy, an iron-platinum alloy, an iron-palladium alloy, an iron-cobalt-chromium alloy, an iron-nickel-chromium alloy, an iron-nickel alloy.
Nickel-manganese alloy, iron-cobalt-chromium alloy,
The coefficient of linear thermal expansion selected from the group consisting of antiferromagnetic chromium-iron-manganese alloys and amorphous alloys is 1 × 10
The surface emitting laser according to any one of claims 51 to 54, wherein the surface emitting laser is formed of a material of ^-5 or less. 56. The invar-type alloy substrate is formed of an iron-nickel alloy.
6. The surface emitting laser according to 5. 57. The method according to claim 51, wherein the adhesive layer is formed of an adhesive material selected from the group consisting of an epoxy resin, a silicone resin, a polyimide resin solder and ethylene vinyl acetate. A surface emitting laser according to the item. 58. The semiconductor device according to claim 51, wherein the at least one semiconductor thin film is formed of silicon.
60. The surface emitting laser according to any one of items 57 to 57. 59. The substrate according to claim 51, wherein the substrate is formed of silicon.
A surface emitting laser according to the item. 60. A semiconductor device, wherein at least one semiconductor thin film is formed on a Kovar alloy substrate via an adhesive layer. 61. The Kovar alloy substrate contains iron, cobalt and nickel as main components, the iron content is 30 to 70 atom%, the sum of the cobalt and nickel contents is 30 to 60 atom%, and the other elements are contained. The amount is 10% atom or less, and the coefficient of linear thermal expansion is 1 × 10 ^−5.
61. The semiconductor device according to claim 60, wherein the semiconductor device is formed of a Kovar alloy having a temperature of / C or lower. 62. The semiconductor according to claim 60, wherein the adhesive layer is formed of an adhesive material selected from the group consisting of an epoxy resin, a silicone resin, a polyimide resin solder, and ethylene vinyl acetate. element. 63. The semiconductor device according to claim 60, wherein the surface of the Kovar alloy substrate on the side of the semiconductor thin film has a texture structure. 64. The semiconductor according to claim 60, further comprising a transparent protective plate provided on the at least one semiconductor thin film on a side opposite to the Kovar alloy substrate. element. 65. The semiconductor device according to claim 64, wherein the transparent protection plate is formed of plastic. 66. The semiconductor device according to claim 60, wherein the at least one semiconductor thin film is formed of silicon.
66. The semiconductor device according to any one of items 65 to 65. 67. A porous layer is formed on a substrate, at least one semiconductor thin film is formed on the porous layer, and a Kovar alloy substrate is adhered to the at least one semiconductor thin film. A method for manufacturing a semiconductor device, wherein the substrate is separated at a layer portion. 68. The method according to claim 67, further comprising bonding a transparent protective plate to a surface of said at least one semiconductor thin film from which said substrate has been peeled off. 69. A porous layer is formed on a substrate, at least one semiconductor thin film is formed on the porous layer, and a transparent protective plate is adhered to the at least one semiconductor thin film. A method of manufacturing a semiconductor device, comprising: separating the substrate at a portion of a semiconductor layer; and bonding a Kovar alloy substrate to a surface of the at least one semiconductor thin film from which the substrate has been separated. 70. The Kovar alloy substrate is manufactured by rolling a Kovar alloy plate with a rolling roller having a texture structure on a peripheral surface and a rolling roller having a smooth peripheral surface. 13. The method for manufacturing a semiconductor device according to claim 1. 71. The Kovar alloy substrate contains iron, cobalt and nickel as main components, the content of iron is 30 to 70 atom%, the sum of the contents of cobalt and nickel is 30 to 60 atom%, and the other elements contain The amount is 10% atom or less, and the coefficient of linear thermal expansion is 1 × 10 ^−5.
71. The method of manufacturing a semiconductor device according to any one of claims 67 to 70, wherein the semiconductor device is formed of a Kovar alloy having a temperature of / ° C or lower. 72. The kovar alloy substrate is bonded to the at least one semiconductor thin film with an adhesive material selected from the group consisting of an epoxy resin, a silicone resin, a polyimide resin solder, and ethylene vinyl acetate. 72. The method for manufacturing a semiconductor device according to any one of items 67 to 71. 73. The transparent protection plate is formed of plastic.
13. The method for manufacturing a semiconductor device according to claim 1. 74. The semiconductor device according to claim 67, wherein the at least one semiconductor thin film is formed of silicon.
74. The method of manufacturing a semiconductor device according to any one of items 73 to 73. 75. The method according to claim 67, wherein the porous layer is a porous silicon layer.
13. The method for manufacturing a semiconductor device according to item 10. 76. The semiconductor device according to claim 67, wherein said substrate is formed of silicon.
13. The method for manufacturing a semiconductor device according to item 10. 77. A solar cell comprising: at least one semiconductor thin film formed on a Kovar alloy substrate via an adhesive layer; and a patterned electrode on the semiconductor thin film. 78. The solar cell according to claim 77, further comprising a transparent protection plate provided on the at least one semiconductor thin film on a side opposite to the Kovar alloy substrate. 79. The Kovar alloy substrate contains iron, cobalt and nickel as main components, the content of iron is 30 to 70 atom%, the sum of the contents of cobalt and nickel is 30 to 60 atom%, and the other elements contain The amount is 10% atom or less, and the coefficient of linear thermal expansion is 1 × 10 ^−5.
The solar cell according to claim 77, wherein the solar cell is formed of a Kovar alloy having a temperature of / ° C. or less. 80. The method according to claim 77, wherein the adhesive layer is formed of an adhesive material selected from the group consisting of an epoxy resin, a silicone resin, a polyimide resin solder, and ethylene vinyl acetate. A solar cell according to the item. 81. The solar cell according to claim 77, wherein a surface of the Kovar alloy substrate on the semiconductor thin film side has a texture structure. 82. The transparent protective plate is formed of plastic.
The solar cell according to any one of the above. 83. The device according to claim 77, wherein the at least one semiconductor thin film is formed of silicon.
83. The solar cell according to any one of items 82 to 82. 84. The semiconductor device according to claim 77, wherein the substrate is made of silicon.
A solar cell according to the item. 85. A porous layer is formed on a substrate, at least one semiconductor thin film is formed on the porous layer, and an electrode is patterned on the at least one semiconductor thin film. A method for manufacturing a solar cell, comprising: detaching the substrate at the portion of the porous layer after bonding the substrate. 86. The method according to claim 85, further comprising bonding a transparent protective plate to a surface of said at least one semiconductor thin film from which said substrate has been peeled off. 87. A porous layer is formed on a substrate, at least one semiconductor thin film is formed on the porous layer, and an electrode is patterned on the at least one semiconductor thin film. After bonding the protective plate, the substrate is peeled off at the portion of the porous layer, and a Kovar alloy substrate is bonded to a surface of the at least one semiconductor thin film from which the substrate has been peeled off. Manufacturing method. 88. The invar-type alloy substrate is manufactured by rolling an invar-type alloy plate with a rolling roller having a texture structure on a peripheral surface and a rolling roller having a smooth peripheral surface. Any one of to 87
A method for manufacturing a solar cell according to the item. 89. The Kovar alloy substrate contains iron, cobalt and nickel as main components, the content of iron is 30 to 70 atom%, the sum of the contents of cobalt and nickel is 30 to 60 atom%, and the other components are contained. The amount is 10% atom or less, and the coefficient of linear thermal expansion is 1 × 10 ^−5.
90. The method of manufacturing a solar cell according to claim 85, wherein the solar cell is formed of a Kovar alloy having a temperature of / ° C or lower. 90. The method according to claim 85, wherein the Kovar alloy substrate is bonded using an adhesive material selected from the group consisting of epoxy resin, silicone resin, polyimide resin solder and ethylene vinyl acetate. A method for manufacturing a solar cell according to any one of the preceding claims. 91. The apparatus according to claim 86, wherein the transparent protective plate is made of plastic.
0. The method for manufacturing a solar cell according to any one of items 0 to 10. 92. The at least one semiconductor thin film is formed of silicon.
90. The method of manufacturing a solar cell according to any one of the items 91 to 91. 93. The method according to claim 85, wherein the porous layer is a porous silicon layer.
A method for manufacturing a solar cell according to the item. 94. The substrate according to claim 85, wherein said substrate is formed of silicon.
A method for manufacturing a solar cell according to the item.