JP2001272923A - Production method of display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide technique for manufacturing a high-performance display device by using a plastic supporting body. SOLUTION: After forming a release layer on an element formation substrate and forming a semiconductor device and a light emitting element furthermore on it, a fixed substrate 130 is stuck together with a first adhesive 129 on the light emitting element. By exposing in the gas including a halogen fluoride in this state, the release layer is removed and the element formation substrate is peeled. Then, a substrate to be stuck 132 consisting of the plastic supporting body is laminated instead of the peeled element formation substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device (hereinafter, referred to as a light-emitting device) having an element having a light-emitting material interposed between electrodes (hereinafter, referred to as a light-emitting device) or an element having a liquid crystal interposed between electrodes (hereinafter, referred to as a light-emitting device). (Hereinafter referred to as a liquid crystal element)
A liquid crystal display device). Note that the light emitting device and the liquid crystal display device are collectively called a display device.

[0002] The above-mentioned luminescent materials include all luminescent materials that emit light (phosphorescence and / or fluorescence) via singlet excitation or triplet excitation or both excitations.

[0003]

2. Description of the Related Art In recent years, a light-emitting device (hereinafter, referred to as an EL display device) using a light-emitting element (hereinafter, referred to as an EL element) using a light-emitting material (hereinafter, referred to as an EL material) capable of obtaining EL (Electro Luminescence). Is being developed. E
The L display device has a structure having an EL element having a structure in which an EL material is interposed between an anode and a cathode. By applying a voltage between the anode and the cathode to flow a current through the EL material, the carriers are recombined to emit light. That is, the EL display device does not need a backlight as used in a liquid crystal display device because the light emitting element itself has a light emitting ability. Further, it has the advantages of a wide viewing angle, light weight, and low power consumption.

Various applications using such an EL display device are expected.
Since the thickness of the display device is small, and therefore, the weight of the display device can be reduced, attention has been paid to the use of the display device for portable devices. Therefore, it has been attempted to form a light emitting element on a flexible plastic film.

[0005] However, since the heat resistance of the plastic film is low, the maximum temperature of the process must be lowered, and as a result, it is impossible to form a TFT having better electric characteristics as when formed on a glass substrate. . Therefore, a high-performance display device using a plastic film has not been realized.

[0006]

An object of the present invention is to provide a technique for manufacturing a high-performance display device using a plastic support (including a flexible plastic film or a plastic substrate). I do.

[0007]

According to the present invention, required elements are formed on a substrate (glass substrate, quartz substrate, silicon substrate, metal substrate, or ceramic substrate) having heat resistance as compared with plastic, and then these elements are formed. Is transferred to a plastic support by treatment at room temperature.

The necessary element is a semiconductor element (typically a thin film transistor) used as a pixel switching element in an active matrix type display device.
Alternatively, it refers to an MIM element and a light emitting element or a liquid crystal element. In the case of a passive display device, it refers to a light-emitting element or a liquid crystal element. PES (polyethylene sulphyl), PC (polycarbonate), PET (polyethylene terephthalate)
Alternatively, PEN (polyethylene naphthalate) can be used.

In the present invention, the above element is formed on a release layer made of a silicon film (including a silicon germanium film), and the release layer is removed in a final step using a gas containing halogen fluoride. As a result, each element is separated from the substrate, and thereafter, the element can be bonded to the plastic support. Since the etching of the silicon film by the halogen fluoride proceeds easily at room temperature,
Even after the formation of a light-emitting element having low heat resistance, the light-emitting element can be performed without any problem.

[0010] Halogen fluoride is a substance represented by the chemical formula XFn (X is a halogen other than fluorine, n is an integer) and includes chlorine monofluoride (ClF), chlorine trifluoride (Cl
F ₃ ), bromine monofluoride (BrF), bromine trifluoride (Br)
F ₃ ), iodine monofluoride (IF) or iodine trifluoride (IF ₃ ) can be used. Further, the silicon film may be a crystalline silicon film or an amorphous silicon film. This halogen fluoride has a large selectivity between the silicon film and the silicon oxide film, and enables selective etching of the silicon film.

The silicon film is etched only by exposing the silicon film to the above-mentioned halogen fluoride. However, even if another fluoride (carbon tetrafluoride (CF 4) or nitrogen trifluoride) is used, the silicon film is brought into a plasma state. By doing so, it is possible to use the present invention.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS. Note that FIGS. 1 and 2 are cross-sectional views illustrating a manufacturing process in a pixel portion. FIG. 3 is a top view of a pixel manufactured according to this embodiment. The reference numerals used in FIG. 3 correspond to the reference numerals used in FIGS.

In FIG. 1A, reference numeral 101 denotes a substrate on which an element is formed (hereinafter, referred to as an element forming substrate), on which a release layer 102 made of an amorphous silicon film is provided.
It is formed to a thickness of about 500 nm (300 nm in the present embodiment). In this embodiment mode, a glass substrate is used as the element formation substrate 101; however, a quartz substrate, a silicon substrate, a metal substrate, or a ceramic substrate may be used.
Note that in this specification, the entire substrate on which a semiconductor element or a light-emitting element is formed may be referred to as an element-formed substrate.

The release layer 102 is formed under reduced pressure thermal CVD.
Method, a plasma CVD method, a sputtering method, or an evaporation method may be used. On the release layer 102, an insulating film 103 made of a silicon oxide film is formed to a thickness of 200 nm. The insulating film 103 is formed by a low pressure thermal CVD method or a plasma CVD method.
Method, a sputtering method, or an evaporation method may be used.

On the insulating film 103, a crystalline silicon film 104 is formed to a thickness of 50 nm. As a method for forming the crystalline silicon film 104, known means can be used. The amorphous silicon film may be laser-crystallized using a solid-state laser or excimer laser, or the amorphous silicon film may be crystallized by heat treatment (furnace annealing).

Next, as shown in FIG. 1B, the crystalline silicon film 104 is patterned to form island-like crystalline silicon films (hereinafter, referred to as active layers) 105 and 106. Then, a gate insulating film 107 made of a silicon oxide film is formed to a thickness of 80 nm so as to cover the active layer. further,
Gate electrodes 108 and 109 are formed on the gate insulating film 107. In this embodiment mode, the gate electrodes 108 and 109
As the material for the first electrode, a tungsten film or a tungsten alloy film having a thickness of 350 nm is used. Of course, other known materials can be used as the material of the gate electrode.

Then, an element belonging to Group 13 of the periodic table (typically, boron) is added using the gate electrodes 108 and 109 as a mask. A known method may be used for the addition method. Thus, the impurity region (hereinafter referred to as p
110-114 are formed. In addition, immediately below the gate electrode, channel forming regions 115 to 1 are formed.
17 are defined. The p-type impurity regions 110 to 114
Is the source or drain region of the TFT.

Next, as shown in FIG. 1C, a silicon nitride film is formed to a thickness of 50 nm, and then a heat treatment is performed to activate the added element belonging to Group 13 of the periodic table. Do. This activation may be performed by furnace annealing, laser annealing, lamp annealing, or a combination thereof. In this embodiment, 500
Heat treatment at 4 ° C. for 4 hours is performed in a nitrogen atmosphere.

After the activation is completed, it is effective to perform a hydrogenation treatment. The hydrogenation treatment may use a known hydrogen annealing technique or a plasma hydrogenation technique.

Next, as shown in FIG. 1D, a first interlayer insulating film 119 made of a silicon oxide film is formed to a thickness of 800 nm, contact holes are formed, and the wirings 120 to 120 are formed.
123 is formed. As the first interlayer insulating film 119, another inorganic insulating film may be used, or a resin (organic insulating film) may be used. In this embodiment mode, metal wirings having a three-layer structure of titanium / aluminum / titanium are used as the wirings 120 to 123. Of course, any material may be used as long as it is a conductive film. The wirings 120 to 123 serve as a source wiring or a drain wiring of the TFT.

In this state, the switching TFT 201 and the current controlling TFT (driving TFT) 202 are completed. In this embodiment, both TFTs are p-channel TFTs.
It is formed of FT. However, the switching TFT 201
Has a structure in which a gate electrode is formed so as to cross an active layer at two places, and two channel forming regions are connected in series. With such a structure, an off-current value (a current flowing when the TFT is turned off) can be effectively suppressed.

At the same time, a storage capacitor 301 is formed as shown in FIGS. The storage capacitor 301 is formed by the semiconductor layer 302 formed simultaneously with the active layer, the lower storage capacitor formed by the gate insulating film 107 and the gate electrode 109, and the gate electrode 109, the first interlayer insulating film 119, and the wiring 123. The upper storage capacitor is formed. The semiconductor layer 302 is electrically connected to the wiring 123.

Next, as shown in FIG. 1D, a transparent conductive film (typically, a compound film of indium oxide and tin oxide) is formed to a thickness of 100 nm, and a pixel electrode 124 is formed by patterning. I do. At this time, the wiring 122 and the pixel electrode 124 make ohmic contact. Therefore, the pixel electrode 124 and the current control TFT 202 are electrically connected. Further, the pixel electrode 124 functions as an anode of the EL element.

After forming the pixel electrode 124, a second interlayer insulating film 125 made of a silicon oxide film is formed to a thickness of 300 nm. Then, an opening 126 is formed to have a thickness of 70 nm.
A thick organic EL layer 127 and a 300 nm thick cathode 128 are formed by a vapor deposition method. In the present embodiment, the organic EL layer 1
27 is a structure in which a hole injection layer having a thickness of 20 nm and a light emitting layer having a thickness of 50 nm are stacked. Needless to say, a hole injection layer, a hole transport layer, an electron transport layer, or another known structure in which electron injection is combined with the light emitting layer may be used.

In this embodiment, Cu is used as the hole injection layer.
Pc (copper phthalocyanine) is used. In this case, first, copper phthalocyanine is formed so as to cover all the pixel electrodes,
Thereafter, a red light emitting layer, a green light emitting layer, and a blue light emitting layer are formed for each of the pixels corresponding to red, green, and blue. The regions to be formed may be distinguished by using a shadow mask at the time of vapor deposition. By doing so, color display becomes possible.

When a green light emitting layer is formed, Alq ₃ (tris-8-quinolinolato aluminum complex) is used as a base material of the light emitting layer, and quinacridone or coumarin 6 is added as a dopant. When a red light emitting layer is formed, Alq _{3 is} used as a base material of the light emitting layer.
, And DCJT, DCM1 or DCM2 is added as a dopant. When forming a blue light-emitting layer, BAlq ₃ (2-methyl-
Perylene is added as a dopant using a 5-coordinate complex having a mixed ligand of 8-quinolinol and a phenol derivative.

It is needless to say that the present invention is not limited to the above-mentioned organic materials, and it is possible to use known low-molecular-weight organic EL materials, high-molecular-weight organic EL materials, or inorganic EL materials. When a polymer organic EL material is used, a coating method can be used.

It is also possible to use not only a luminescent material via singlet excitation but also a luminescent material via triplet excitation. That is, not only a light-emitting material that emits fluorescence but also a light-emitting material that emits phosphorescence can be used.

As described above, the pixel electrode (anode) 12
4. An EL element including the organic EL layer 127 and the cathode 128 (indicated by 305 in FIG. 3B) is formed. In this embodiment mode, this EL element functions as a light emitting element.

Next, as shown in FIG. 2A, a substrate (hereinafter, referred to as a fixed substrate) 130 for fixing the element is bonded with a first adhesive 129. Although a flexible plastic film is used as the fixed substrate 130 in this embodiment, a glass substrate, a quartz substrate, a plastic substrate,
A silicon substrate or a ceramic substrate may be used. Further, as the first adhesive 129, the release layer 10
When removing 2, it is necessary to use a material having a high selectivity.

Typically, an insulating film made of resin can be used. In this embodiment, polyimide is used, but acrylic, polyamide, or epoxy resin may be used. In addition, when it is located on the observer side (the user side of the display device) when viewed from the EL element, it is necessary that the material is a material that transmits light.

By performing the process shown in FIG.
The L element can be completely shielded from the atmosphere. Thereby, the deterioration of the organic EL material due to oxidation can be almost completely suppressed, and the reliability of the EL element can be greatly improved.

Next, as shown in FIG. 2B, the entire substrate on which the EL element is formed is exposed to a gas containing halogen fluoride to remove the peeling layer 102. In this embodiment mode, chlorine trifluoride (ClF ₃ ) is used as halogen fluoride, and nitrogen is used as a diluent gas. As the dilution gas,
Argon, helium, or neon may be used. Both flow rates are 500 sccm (8.35 × 10 ⁻⁶ m ³ / s).
And the reaction pressure is ¹ to 10 Torr (1.3 × 10 ² to
(1.3 × 10 ³ Pa). The processing temperature may be room temperature (typically 20 to 27 ° C.).

In this case, the silicon film is etched, but the plastic film, glass substrate, polyimide film, and silicon oxide film are not etched. That is, the release layer 102 is selectively etched by being exposed to chlorine trifluoride gas, and is finally completely removed. Since the active layers 105 and 106 also formed of a silicon film are covered with the gate insulating film 107, they are not exposed to chlorine trifluoride gas and are not etched.

In the case of this embodiment, the peeling layer 102 is gradually etched from the exposed end, and the element forming substrate 101 and the insulating film 103 are separated when completely removed. At this time, the TFT and the EL element are formed by laminating thin films, but remain in a form transferred to the fixed substrate 130.

Here, the peeling layer 102 is etched from the end, but the element forming substrate 101
Is large, the time required for complete removal is undesirably long. Therefore, this embodiment is desirably implemented when the element forming substrate 101 has a diagonal of 3 inches or less (preferably 1 inch or less).

Thus, the TFT and the EL are fixed on the fixed substrate 130.
After the transfer of the element, a second adhesive 131 is formed and a plastic film 132 is attached as shown in FIG. As the second adhesive 131, an insulating film made of a resin (typically, polyimide, acrylic, polyamide, or epoxy resin) may be used, or an inorganic insulating film (typically, a silicon oxide film) may be used. . In addition, when it is located on the observer side when viewed from the EL element, it is necessary that the material is a material that transmits light.

Thus, the TFT and the EL element are transferred from the glass substrate 101 to the plastic film 132.
As a result, the two plastic films 130, 132
Thus, a flexible EL display device sandwiched therebetween can be obtained. As described above, when the fixed substrate (here, plastic film) 130 and the bonded substrate (here, plastic film) 132 are made of the same material, the thermal expansion coefficients become equal, so that it is possible to reduce the influence of stress distortion due to temperature change. .

In the EL display device manufactured according to the present embodiment, the number of masks required for photolithography is extremely small as a total of six, and a high yield and a low manufacturing cost can be achieved. In addition, the EL display device thus formed can have extremely high performance because the TFT formed without being limited by the heat resistance of the plastic support can be used as a semiconductor element.

[0040]

[Embodiment 1] In this embodiment, an example in which an EL display device is manufactured by a manufacturing method different from that of the embodiment mode will be described. First, according to the description of the embodiment, FIG.
The state of (C) is obtained. After forming the silicon nitride film 118, a resist 401 is formed thereon. Then, using the resist 401 as a mask, the silicon nitride film 118, the gate insulating film 107, the insulating film 103, and the peeling layer 102 are sequentially etched to form the opening 40 reaching the element forming substrate 101.
2, 403 are formed. (FIG. 4 (A))

Next, as shown in FIG. 4B, after removing the resist 401, the first interlayer insulating film 40 made of resin is formed.
4 is formed. In this embodiment, a polyimide film having a thickness of 2 μm is used as the first interlayer insulating film 404. At this time, the element forming substrate 101 and the first interlayer insulating film 404 are bonded at the bottoms of the openings 402 and 403.

Next, as shown in FIG. 4C, a contact hole is formed in the first interlayer insulating film 404 and the wiring 120 is formed.
To 123 are formed. Further, a pixel electrode 124 made of a transparent conductive film is formed. The formation of these wirings and electrodes is the same as in the embodiment.

After the pixel electrode 124 is formed, the next step is shown in FIG.
As shown in (D), the first interlayer insulating film 404, the silicon nitride film 118, the gate insulating film 107, and the insulating film 103 are sequentially etched to form an opening 405 reaching the peeling layer 102.
406 is formed.

Next, as shown in FIG. 4E, the entire substrate on which the TFT is formed is exposed to a gas containing halogen fluoride to remove the peeling layer 102. In this embodiment, chlorine trifluoride (ClF ₃ ) is used as halogen fluoride, and nitrogen is used as diluent gas. Both flow rates are 500sccm
(8.35 × 10 ⁻⁶ m ³ / s) and the reaction pressure is 10 T
orr (1.3 × 10 ³ Pa). The processing temperature is set to 25 ° C.

In the case of this embodiment, since the chlorine trifluoride gas enters from the openings 405 and 406, the etching of the release layer 102 proceeds not only from the end but also from the inside of the substrate surface. Therefore, the throughput of the step of removing the separation layer 102 can be improved as compared with the case described in the embodiment. Of course, the thin films other than the release layer 102 are not etched by the chlorine trifluoride gas, and the active layer made of a silicon film is protected by the silicon oxide film and is not etched.

When the step of removing the release layer 102 is performed in this manner, the openings 402 and 403 are formed as shown in FIG.
Element forming substrate 1 at the bottom of the first interlayer insulating film 404.
01 is in a bonded state. Actually, as shown in FIG. 6, the openings 402 and 403 are formed at various positions of the pixel, so that it is possible to adhere with sufficient strength. Also,
According to the present embodiment, the present invention can be sufficiently implemented even if the element forming substrate 101 has a diagonal of 3 inches or more.

Next, as shown in FIG.
A second interlayer insulating film 407 provided with 26 is formed. The second interlayer insulating film 407 also has an effect of closing the openings 405 and 406. Further, the organic EL layer 127 and the cathode 128
Is formed to complete the EL element. For the material, structure, or formation method of the organic EL layer 127 and the cathode 128, the description of the embodiment mode can be referred to.

Next, as shown in FIG. 5B, the fixed substrate 130 is bonded with a first adhesive (epoxy resin in this embodiment) 129. In the present embodiment, the fixed substrate 1
A plastic substrate is used as 30. Thus, the EL element can be completely shielded from the atmosphere.

Next, the element forming substrate 101 and the first interlayer insulating film 404 bonded at the bottoms of the openings 402 and 403 are separated. This step may be performed mechanically, or may be performed by heat treatment for separation.

Element forming substrate 101 and first interlayer insulating film 40
After separation from the bonding substrate 4, the bonding substrate 132 is bonded using the second adhesive 131. In this embodiment, a polyimide film is used as the second adhesive 131, and the bonding substrate 13 is used.
A plastic substrate is used as 2. As described above, when the fixed substrate 130 and the bonded substrate 132 are made of the same material, the thermal expansion coefficients are equal to each other.

In the EL display device manufactured according to this embodiment, the number of masks required for photolithography is extremely small as a total of six, and a high yield and a low manufacturing cost can be achieved. In addition, the EL display device thus formed can have extremely high performance because the TFT formed without being limited by the heat resistance of the plastic support can be used as a semiconductor element.

Embodiment 2 In the embodiment or the embodiment 1 of the present invention, as a manufacturing process up to the point where a gate electrode is formed, Japanese Patent Application Laid-Open Nos. 9-313260 and 10-247735 by the present applicant, JP-A-10-
270363 or JP-A-11-191628
It is effective to use the invention described in any of the publications.

The techniques described in the above publications are all techniques for forming a crystalline silicon film having extremely high crystallinity. By using these techniques, a high-performance T
It is possible to form an FT. Each of these techniques includes a heat treatment at 550 ° C. or higher, but by using the technique of the present invention, a plastic support with low heat resistance can be used as an element formation substrate.

The configuration of the present embodiment can be implemented by freely combining with the configuration of the embodiment of the present invention or Embodiment 1.

[Embodiment 3] In this embodiment, an example in which the present invention is applied to a liquid crystal display device will be described. FIG. 7 is used for the description.

In FIG. 7A, reference numeral 701 denotes an element forming substrate made of glass; 702, a release layer made of amorphous silicon; 703, an insulating film made of silicon nitride oxide;
Reference numeral 4 denotes a pixel TFT. The pixel TFT 704 is a p-channel TFT manufactured according to the steps described in the embodiments of the invention, and is used as a switching element for controlling a voltage applied to liquid crystal in this embodiment. Also, 7
Reference numeral 05 denotes a pixel electrode made of a transparent conductive film electrically connected to the pixel TFT 704.

Up to the structure described above, the manufacturing steps described in the embodiments of the present invention may be followed. Needless to say, the structure of the TFT may be a bottom gate type, and the manufacturing process of the TFT does not need to be limited to the process described in the embodiment of the invention.

After forming the pixel TFT 704 and the pixel electrode 705, an alignment film 706 made of resin is formed. The alignment film 706 may be formed by a printing method. The thickness is set to 60 nm.

Next, a counter substrate 707 made of a plastic film is prepared, and a light shielding film 7 made of titanium is formed thereon.
08 is formed to a thickness of 120 nm, and a counter electrode 709 made of a transparent conductive film is formed to a thickness of 110 nm. An alignment film 710 is formed thereon with a thickness of 60 nm.

Next, a sealant (not shown) is formed on the alignment film 706 on the element formation substrate side by means of a dispenser or the like, and the alignment film 706 on the element formation substrate side and the alignment film 710 on the counter substrate side are formed. Are bonded face to face, and then pressed and bonded. Further, a liquid crystal 711 is injected into a region surrounded by the sealing material by using a vacuum injection method, and an injection port of the sealing material is closed with a resin to complete a liquid crystal cell. These steps may be performed by a known liquid crystal cell manufacturing step.

At this time, polyimide, acrylic or epoxy resin is used as a sealing material (not shown).
It is necessary to use a material that can secure a selectivity when etching the separation layer 702 later. This sealing agent plays a role similar to that of the first adhesive 129 in FIG.

Next, as shown in FIG. 7B, the entire liquid crystal cell is exposed to a gas containing halogen fluoride to form a release layer 70.
2 is etched. In this embodiment, chlorine trifluoride is used as halogen fluoride and argon is used as diluent gas. In this embodiment, since the treatment is performed in a state where the separation layer is covered with the element formation substrate 701, the etching is gradually performed from the exposed surface of the separation layer 702.

Thus, finally, peeling layer 702 is completely removed, and insulating film 703 made of silicon nitride oxide is exposed. At this time, the counter substrate 707 functions as a fixed substrate for fixing the shape of the element.

Finally, the second adhesive 712 is removed from the acrylic film.
The bonding substrate 713 is bonded by using. In this embodiment, a plastic film is used as the bonding substrate 713. Of course, a plastic substrate may be used.

As described above, when the present invention is applied to a liquid crystal display device, the liquid crystal display device is once completed by completing the liquid crystal injection step, and then the release layer is removed while using the counter substrate as a fixed substrate. Steps can be performed. Therefore, a high-performance TF can be used without increasing the number of complicated steps.
T can be formed on a plastic support.

It is also possible to replace the element forming substrate and the bonded substrate before injecting the liquid crystal by the method described in the first embodiment. In that case, it can be easily implemented by combining the configuration of the first embodiment with the configuration of the present embodiment. Further, the configurations of the second embodiment may be combined.

[Embodiment 4] In this embodiment, an example in which the present invention is applied to a simple matrix type EL display device will be described. FIG. 8 is used for the description.

In FIG. 8A, reference numeral 801 denotes an element forming substrate made of glass; 802, a release layer made of amorphous silicon; 803, an insulating film made of silicon nitride oxide;
Reference numeral 4 denotes a first stripe electrode, which in this embodiment is an anode made of a transparent conductive film. A plurality of the anodes 804 are formed in a stripe shape in a direction parallel to the paper surface.

On the first stripe electrode 804, a plurality of banks 806 made of a device isolation insulating film 805 and a resin film are formed in a stripe shape. These are formed so as to be orthogonal to the above-mentioned first stripe electrode 804. Thus, the bank 8 composed of the element isolation insulating film 805 and the resin film is formed.
After the formation of 06, an organic EL layer 807 and a second stripe electrode (a cathode made of a metal film in this embodiment) 808 are formed by a vapor deposition method. Since the second stripe electrode 808 is formed in a stripe shape by the bank 806, it is formed to be orthogonal to the first stripe electrode 804.

At this time, the capacitor formed of the first stripe electrode (here, anode) 804, the organic EL layer 807, and the second stripe electrode (here, cathode) 808 is an EL capacitor.
Element. Of course, the first stripe electrode 804, organic E
A known method or method for forming the L layer 807 and the second stripe electrode 808 can be used.

After the EL element is formed, the plastic film 810 is bonded using the first adhesive (acryl in this embodiment) 809. Thus, the EL element can be completely shielded from the atmosphere.

Next, the substrate on which the EL element is formed is exposed to a nitrogen atmosphere containing chlorine trifluoride gas, and the peeling layer 802 is removed by etching. Then, the EL element and the element formation substrate 801 are separated.

Next, the bonded substrate 812 is bonded using the second adhesive 811. In this embodiment, the second adhesive 81 is used.
1 is a polyimide film, and a bonded substrate 812 is a plastic film.

In the EL display device manufactured according to the present embodiment, the number of masks required for photolithography is extremely small as a total of two, and a high yield and a low manufacturing cost can be achieved. Note that the configuration of this embodiment can be implemented in combination with the second embodiment.

[Embodiment 5] In this embodiment, a case where a color filter is provided in advance on a bonding substrate and bonding is performed will be described with reference to FIG.

First, the state shown in FIG. 5A is obtained according to the second embodiment. However, in this embodiment, an organic EL layer 901 emitting white light is formed instead of the organic EL layer 127. Specifically, a material described in JP-A-8-96959 or JP-A-9-63770 may be used as the light emitting layer. In this embodiment, PVK (polyvinyl carbazole), Bu-P
BD (2- (4'-tert-butylphenyl) -5-
(4 ″ -biphenyl) -1,3,4-oxadiazole), coumarin 6, DCM1 (4-dicyanomethylene-
2-methyl-6-p-dimethylaminostyryl-4H-
Pyran), TPB (tetraphenylbutadiene) and Nile Red are used. In addition, the organic EL layer 9
A cathode 902 made of an alloy film of aluminum and lithium is formed on 01.

Next, as shown in FIG. 9B, a fixed substrate (plastic film in this embodiment) 904 is bonded using a first adhesive (polyimide film in this embodiment) 903. Then, the element forming substrate 101 is separated.

Next, as shown in FIG. 9C, a color filter 905 corresponding to red, a color filter 906 corresponding to green, and a color filter 907 corresponding to blue.
A bonded substrate (a plastic film in this embodiment) provided with a second adhesive (epoxy resin in this embodiment)
909 together.

At this time, since each color filter can be formed using a combination of spin coating and photolithography or using a printing method, it can be formed on a plastic film without any problem. Also,
An improvement in yield can be expected as compared with the case where a color filter is formed on an element formation substrate.

The configuration of the present embodiment can be implemented by freely combining with the configuration of the embodiment of the invention or the embodiments 1 to 4.

[Embodiment 6] In the present invention, DLC is applied to one or both surfaces of a fixed substrate and / or a bonded substrate.
It is effective to form a (diamond-like carbon) film in advance. However, if the film thickness is too large, the transmittance is reduced. Therefore, the thickness is preferably 50 nm or less (preferably 10 to 20 nm).

The characteristic of the DLC film is 1550 cm ^-1
And a Raman spectrum distribution with a shoulder at about 1300 cm ^-1 . Further, it has a feature of exhibiting a hardness of 15 to 25 Pa when measured by a micro hardness tester.

Since the DLC film has a higher hardness and a higher thermal conductivity than the plastic support, it is effective to provide it as a protective film for protecting the surface.

Therefore, it is also possible to form a DLC film before attaching the plastic support and to attach the DLC film, or to attach the plastic support and then form the DLC film. In any case, the DLC film may be formed by a sputtering method or an ECR plasma CVD method.

The structure of this embodiment can be implemented by freely combining with any structure of the first to fifth embodiments.

[Embodiment 7] In Embodiments 1, 2, 4 to 6, E
Although the display device using the L element has been described as an example, the present invention can also be used for an EC (electrochromic) display device, a field emission display (FED), or a display device having a light emitting diode using a semiconductor. It is.

[0087]

According to the present invention, a substrate (device forming substrate) having higher heat resistance than plastic is used in the process of manufacturing a semiconductor device, so that a semiconductor device having high electric characteristics can be manufactured. Further, after forming the semiconductor element and the light emitting element, the element forming substrate is peeled off, and a plastic support is attached.

Therefore, it is possible to manufacture a high-performance display device using a plastic support as a support substrate. Further, since the supporting substrate is made of plastic, a flexible display device can be provided, and a lightweight display device can be provided.

[Brief description of the drawings]

FIG. 1 illustrates a manufacturing process of an EL display device.

FIG. 2 illustrates a manufacturing process of an EL display device.

FIG. 3 illustrates a top structure and a circuit configuration of an EL display device.

FIG. 4 illustrates a manufacturing process of an EL display device.

FIG. 5 illustrates a manufacturing process of an EL display device.

FIG. 6 is a diagram illustrating a top structure of an EL display device.

FIG. 7 illustrates a manufacturing process of a liquid crystal display device.

FIG. 8 illustrates a manufacturing process of an EL display device.

FIG. 9 illustrates a manufacturing process of an EL display device.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI theme coat ゛ (Reference) H01L 21/336 H01L 29/78 626C H05B 33/14 627D

Claims (9)

[Claims] An insulating film is formed on the release layer; a light emitting element is formed on the insulating film; and a first adhesive is formed on the light emitting element. The fixed substrate is attached using an agent, and after the fixed substrate is attached, the release layer is removed by exposing to a gas containing halogen fluoride, and the insulating film and the attached substrate are bonded using a second adhesive. A method for manufacturing a display device, comprising: 2. A release layer is formed on an element forming substrate, an insulating film is formed on the release layer, a semiconductor element is formed on the insulating film, and the semiconductor element is electrically connected to the semiconductor element. Forming a light emitting element, bonding a fixed substrate on the light emitting element using a first adhesive, removing the peeling layer by exposing to a gas containing halogen fluoride after bonding the fixed substrate. And bonding the insulating film and the bonded substrate using a second adhesive. Forming a release layer on the element formation substrate, forming an insulating film on the release layer, forming an active layer, a gate insulating film and a gate electrode on the insulating film; Forming an opening in the insulating film, the insulating film and the release layer, forming a first interlayer insulating film covering the gate electrode,
Forming a wiring and a pixel electrode on the interlayer insulating film;
An opening is formed in the interlayer insulating film, the gate insulating film and the insulating film to expose the release layer, and the release layer is removed by exposing to a gas containing halogen fluoride, and the wiring and the pixel electrode are removed. Forming a second interlayer insulating film covering the second interlayer insulating film, exposing the pixel electrode by etching the second interlayer insulating film, forming a luminescent material and a cathode on the pixel electrode;
A fixed substrate is bonded on the cathode using a first adhesive, and after bonding the fixed substrate, the element forming substrate is separated from the first interlayer insulating film, and the insulating film and the bonded substrate are separated. Are bonded together using a second adhesive. 4. The method for manufacturing a display device according to claim 1, wherein polyimide, acrylic, or epoxy resin is used as the first adhesive. 5. The method for manufacturing a display device according to claim 1, wherein the same material as that of the fixed substrate is used for the bonded substrate. 6. A release layer is formed on an element forming substrate, an insulating film is formed on the release layer, a first stripe electrode is formed on the insulating film, and a second stripe electrode is formed. The fixed substrate is bonded onto the element forming substrate with a sealant, a liquid crystal is injected between the first stripe electrode and the second stripe electrode, and after injecting the liquid crystal, a gas containing halogen fluoride is injected. A method for manufacturing a display device, comprising: removing the release layer by exposing; and bonding the insulating film and a bonded substrate together using a second adhesive. 7. A release layer is formed on an element forming substrate, an insulating film is formed on the release layer, an active layer, a gate insulating film, and a gate electrode are formed on the insulating film. Forming a first interlayer insulating film covering the electrodes, forming wirings and pixel electrodes on the first interlayer insulating film, and bonding a fixed substrate provided with a counter electrode on the element forming substrate with a sealant; Injecting liquid crystal between the pixel electrode and the counter electrode, removing the release layer by injecting the liquid crystal, and then exposing the insulating film and the bonded substrate to a gas containing halogen fluoride. 2. A method for manufacturing a display device, wherein the display device is attached using an adhesive. 8. The method for manufacturing a display device according to claim 6, wherein a polyimide, acrylic, or epoxy resin is used as the first adhesive. 9. The method for manufacturing a display device according to claim 6, wherein the same material as the fixed substrate is used for the bonded substrate.