JP2001257172A - Semiconductor manufacturing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To rapidly increase and decrease temperature without breaking an electrical heating element, to prevent a substrate from being contaminated by metal resulting from the electrical heating element, and to simplify the temperature control of a reactor. SOLUTION: In this semiconductor manufacturing device is equipped with a reaction pipe 31 that accommodates a plurality of substrates 6, and is subjected to a given treatment, and heating means 57 and 73 that heat the inside of the reaction pipe. The heating means have heat generation plates 57 and 73 that generate heat by allowing current to flow, and the heat generation plates are arranged while the periphery of the reaction pipe is surrounded.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus for manufacturing semiconductor elements from a substrate such as a silicon wafer.

[0002]

2. Description of the Related Art A vertical diffusion CVD apparatus will be described as an example of a conventional semiconductor manufacturing apparatus with reference to FIGS.

The vertical diffusion CVD apparatus 1 has a housing 2, an opening 3 is provided on one side in the longitudinal direction of the housing 2, and a transfer stage 4 is provided below the opening 3, and the transfer is performed. A substrate storage container (substrate cassette) 5 can be placed on the stage 4, and substrates 6 are loaded in multiple stages inside the substrate cassette 5.

A cassette loader 7 is provided on the side of the transfer stage 4 opposite to the opening 3. The cassette loader 7 has an advancing / retreating function and a lifting / lowering function.
Can be transported.

[0005] A cassette opener 8 is provided on the opposite side of the cassette loader 7 from the opening 3, and the cassette opener 8 has a door opening / closing function. The door opening / closing function opens and closes the door of the substrate cassette 5. It is like.

A cassette shelf 9 is provided above the cassette opener 8, and a cassette shelf 11 is also provided above the transfer stage 4.

[0007] A substrate transfer machine 12 is provided on the opposite side of the cassette opener 8 from the cassette loader 7, and the substrate transfer machine 12 can be moved up and down by an elevator 13 for the substrate transfer machine.

A load lock chamber 14 is provided on the substrate transfer machine 12 on the side opposite to the cassette opener 8. The load lock chamber 14 has an opening for a substrate transfer machine, and the opening can be confidentially closed by the gate valve 10. A boat elevator 15 is provided inside the load lock chamber 14, and a furnace port cap 16 is supported by the boat elevator 15.
A boat 18 is concentrically mounted on 6 via a boat support 17.

A reaction furnace 19 is connected to the upper part of the load lock chamber 14. As shown in FIG. 6, the reaction furnace 19 has a cylindrical outer tube 21 and a cylindrical inner tube 22 as reaction tubes, and both the outer tube 21 and the inner tube 22 are made of quartz. The inner tube 22 is provided concentrically inside the outer tube 21. A furnace port flange 20 is provided concentrically on the furnace port cap 16, and the outer tube 21 is erected on the furnace port flange 20. An inner flange 23 is provided on an upper inner peripheral surface of the furnace port flange 20, and the inner tube 22 is supported on the inner flange 23.

The lower end of the furnace port flange 20 is a furnace port 24, which is hermetically closed by the furnace port cap 16.

The upper portion and the periphery of the outer tube 21 are surrounded by a heater body 25. The heater main body 25 is vertically divided into four to five zones, and a heater heating coil 27 is provided for each zone 26. The heater heating coil 27 is formed in a cylindrical shape by a Kanthal wire having a diameter of several mm, and the wire material of the heater heating coil 27 is made of iron, chromium, aluminum or the like. A temperature detector and a temperature control device (not shown) are provided for each zone 26 so that the temperature can be controlled for each zone 26.

A reaction gas supply unit 28 is provided on the upper part of the furnace port flange 20, and the reaction gas supply unit 28 is provided below the outer tube 21 and on the inside flange 23.
The reaction gas supply unit 28 communicates with the inside of the inner tube 22.

A reaction gas discharge portion 29 is provided at a lower portion of the heater main body 25. The reaction gas discharge portion 29 penetrates a lower portion of the outer tube 21 and above the inner flange 23, and Reference numeral 29 communicates with a gap between the inner tube 22 and the outer tube 21.

The substrate cassette 5 is placed on the transfer stage 4 through the opening 3 by an external transfer device (not shown).

The substrate cassette 5 is mounted on the cassette loader 7.
Is transferred to the cassette opener 8 or to one of the cassette shelf 9 and the cassette shelf 11.

The door of the substrate cassette 5 is opened by the cassette opener 8. Substrates 6 in the substrate cassette 5 are loaded in multiple stages on the boat 18 by the substrate transfer machine 12 through the gate valve 10 of the load lock chamber 14.

The boat 18 is provided with the boat elevator 15.
Is inserted into the inner tube 22, and the furnace port 24 is hermetically closed by the furnace port cap 16.

The interiors of the outer tube 21 and the inner tube 22 are decompressed by an exhaust device (not shown).
The heater heating coil 27 is energized and the zone 2
6, the outer tube 21 is heated and the inner tube 22 is heated. The reaction gas is supplied from the reaction gas supply unit 28 to the inside of the inner tube 22, and the reaction gas rises in the inner tube 22 to process the substrate 6.

The reaction gas is supplied to the inner tube 22.
The gas is discharged from the reaction gas discharge portion 29 through a gap between the reaction gas and the outer tube 21 and collected.

During the processing, the temperature of the zone 26 is detected by a temperature detector (not shown), and the amount of current supplied to the heater heating coil 27 is feedback-controlled by a temperature controller (not shown) so as to reach a predetermined temperature. In the case of CVD processing, there is a temperature as a factor of film formation, the zone 26 has a predetermined temperature gradient by temperature gradient control, and in the case of diffusion processing, uniformization of the zone 26 is achieved by heat equalization control. It is like.

After the treatment, the boat 18 is drawn out of the reaction furnace 19 by the boat elevator 15 and waits for natural cooling, and the substrate 6 inside the boat 18 is operated by the reverse operation to the above. The substrate cassette 5 is returned to the inside of the substrate cassette 5, and is carried out of the vertical diffusion CVD apparatus 1 via the transfer stage 4.

[0022]

After the substrate 6 is carried into the vertical diffusion CVD apparatus 1, the substrate 6 is processed inside the reaction furnace 19, and the processed substrate is processed by the vertical diffusion CVD apparatus 1. It takes a long time to carry out the process from 1 to a large number of processes. In particular, since the processing time in the reaction furnace 19 is directly linked to productivity, it is desired to reduce the processing time.

A method of increasing the temperature rising rate by supplying a large current to the heater heating coil 27 may be considered. However, since the heater heating coil 27 is formed of a Kanthal wire in a cylindrical shape, rapid heating and heating can be achieved. When rapid cooling is repeatedly performed, the Kanthal wire may be disconnected due to thermal repetitive stress, and there is a limit in a method of increasing a heating rate by increasing an amount of current, and natural cooling is used for a cooling rate. I had to deal with it.

Since the wire material of the heater heating coil 27 is iron, chromium, aluminum or the like, these metal vapors pass through the outer tube 21 made of quartz, and further the substrate 6 in the inner tube 22. , And the substrate 6 may be contaminated with metal.

Since the heater main body 25 is divided for each of the zones 26, the same number of temperature detectors and the same number of A temperature controller is required. Therefore, the device becomes complicated and the manufacturing cost increases.

In view of the above circumstances, the present invention solves the problem that the substrate is contaminated by metal originating from the heating element, and can rapidly raise and lower the temperature without fear of disconnection of the heating element. This simplifies furnace temperature control.

[0027]

According to the present invention, there is provided a semiconductor manufacturing apparatus comprising: a reaction tube for accommodating a plurality of substrates and performing a predetermined process; and a heating unit for heating the inside of the reaction tube. The present invention relates to a semiconductor manufacturing apparatus provided with a heating plate which generates heat by passing an electric current, wherein the heating plate is arranged so as to surround the periphery of the reaction tube. In relation to
Further, a container surrounding the heating means and sealing the space where the heating means is present, and a pump for reducing the pressure in the container,
During heating, the present invention relates to a semiconductor manufacturing apparatus in which the pressure in the container is reduced, and further, in the semiconductor manufacturing apparatus, a container surrounding the heating means, and a means for introducing into the space where the heating means exists after the processing, The present invention relates to a semiconductor manufacturing apparatus having exhaust means for exhausting introduced air.

Since the heat generating plate which generates heat by applying an electric current heats the reaction tube, even if rapid heat generation is repeated,
There is no fear that the heating plate is broken, and the life of the heating element is prolonged. In addition, since rapid heating becomes possible, the reaction tube can be heated at a heating rate of 100 ° C./min.

If the temperature is controlled and heated by the upper surface heating plate and the side surface heating plate, the reaction tube can be heated to an arbitrary temperature, and the temperature control mechanism is simplified.

If the thickness of the heat generating plate varies depending on the portion, the reaction tube can be heated with a temperature distribution inversely proportional to the thickness.

When cooling air flows through the space between the vessel and the reaction tube, the heat-generating plate is forcibly cooled, the temperature of the reaction tube decreases, and the temperature of the reaction tube decreases by 50%.
The substrate is cooled at a temperature lowering rate of ° C./min, and the throughput of the substrate processing is improved in combination with the rapid heating.

If the heating plate is made of non-metal, preferably carbon, there is no risk of metal contamination in the above treatment.

If the thickness of the heating plate for the upper surface is made thicker at the upper part and thinner at the lower part, both the uniform heating and the temperature gradient heating can be performed by transferring the heat of the entire apparatus.

When the reaction tube is heated by controlling the temperature of the heating plate for the upper surface and the temperature of the heating plate for the side surface, the reaction tube is heated at a predetermined temperature distribution.

[0035]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS.

In FIGS. 1 to 4, the same components as those in FIGS. 5 and 6 are denoted by the same reference numerals.

FIG. 1 shows a reaction furnace 31 in a semiconductor manufacturing apparatus according to the present invention.

A furnace port flange 32 is provided on the ceiling of the load lock chamber (not shown).
A pedestal portion 33 is protrudingly provided at the center of the upper surface of the. The furnace port 34 is a furnace port cap 3
5, the furnace port cap 35 can be moved up and down by a boat elevator (only the lifting arm of the boat elevator is shown). The boat support 17 is concentrically mounted on the furnace port cap 35. The inside of the boat support 17 is filled with a heat insulating material (not shown). A boat 18 is concentrically mounted on the boat support 17, and the boat 6 is loaded with the substrates 6 in multiple stages. The substrate 6 is transferred to the boat 18 by a substrate transfer machine (not shown).

An inner tube 22 made of quartz is mounted on the upper part of the base 33 concentrically with the furnace port 34.

A reaction gas supply passage 36 is formed in the furnace port flange 32. The reaction gas supply passage 36
Is open at the outer peripheral surface of the furnace port flange 32. The other end is the upper surface of the pedestal 33 and is between the boat support 17 and the inner tube 22.

A reaction gas discharge passage 38 is formed inside the furnace port flange 32. The reaction gas discharge passage 38
Has an opening on the upper surface of the furnace port flange 32 and the other end opens on the outer peripheral surface of the furnace port flange 32.

The heater outer cylinder 41 is an airtight container made of metal. The heater outer cylinder 41 has a bottom flange 42, a peripheral wall 43, and a ceiling plate 44, and an outer tube holding hole 45 is formed in the bottom flange 42 in the furnace. Drilled concentrically with the mouth 34,
The outer tube holding hole 45 can communicate with one end of the reaction gas discharge passage 38.

An outer flange 47 is provided on the outer periphery of the lower end of the outer tube 46, and the outer flange 47 is airtightly supported by the bottom flange 42. The outer tube 46 is made of silicon carbide, and the inner tube 22 is inserted into the outer tube 46 so as to form a required gap, thereby forming a reaction tube.

A cooling air outlet 49 is formed at the center of the ceiling plate 44, and three upper surface vacuum connectors 51 are provided in the ceiling plate 44 in an airtight manner.
It is located in an equilateral triangle around 9. The ceiling plate 4
In FIG. 4, three side vacuum connectors 52 are provided in an airtight manner, and are positioned outside the upper surface vacuum connector 51 in an equilateral triangle.

A water cooling pipe (not shown) is provided on the outer periphery of the heater outer cylinder 41, and a disc-shaped upper heat insulating material 53 is provided inside the ceiling plate 44, and in the center of the upper heat insulating material 53. A cooling air discharge hole 54 is formed, a peripheral wall heat insulating material 55 is provided in a cylindrical shape inside the peripheral wall 43, and a bottom heat insulating material 56 is provided on the bottom flange 42 in an annular shape.
The inner diameter of the bottom heat insulator 56 is slightly larger than the outer diameter of the outer tube 46.

An appropriate number (six in the present embodiment) of side heat generating plates 57 are arranged between the outer tube 46 and the peripheral wall heat insulating material 55. The side heat generating plate 57 is made of non-metallic carbon, has a vertically long rectangular plate shape, and the plate thickness is changed in three stages in the longitudinal direction. The upper stage 58 is thicker than the middle stage 59, and the lower stage 61 is It is thinner than the middle stage 59. The side heat generating plates 57 are arranged at a required interval from the outer tube 46, and the side heat generating plates 57 are also arranged at a required interval in a hexagonal cylindrical shape. The outer tube 46 is surrounded.

The side heat generating plate 57 has a narrow slit 62 at the center in the width direction. The slit 62 is cut out from the upper end to the middle of the lower step 61 in the longitudinal direction of the side heat generating plate 57. Formed in said slit 62
Thus, a U-shaped conductive path is formed in the side heat generating plate 57.

The left upper end 63 of the side heat generating plate 57 and the right upper end 64 of the side heat generating plate 57 adjacent to the left upper end 63 are sequentially connected by a total of six carbon blocks 65. The left upper end portion 63 of the side surface heat generating plate 57 is the carbon block 6.
5 is fixed to the right side of the carbon block 65 by a carbon bolt 66, and the right upper end portion 64 of the other side heat generating plate 57 adjacent to the left upper end portion 63 is fixed to the left side surface of the carbon block 65. ing.

Side terminal rods 67 are implanted on the upper surface of the carbon block 65. A total of three side terminal rods 67 are provided on every other carbon block 65, and the side terminal rods 67 are provided. The upper end of the rod 67 penetrates the upper heat insulating material 53, and the upper end of the side terminal rod 67 is connected to the side vacuum connector 52.

The side vacuum connector 52 and the side three-phase AC power supply 68 are delta-connected, and a side thermocouple 69 is provided at a required position on the side of the inner tube 22.
The side thermocouple 69 is connected to the side temperature controller 72 by a lead wire 71, and the side temperature controller 72 is used by the side temperature controller 72 so that the temperature of the installation portion of the side thermocouple 69 becomes a predetermined temperature. The AC power supply 68 is feedback-controlled.

A heating plate 73 for the upper surface is provided above the outer tube 46. The upper surface heating plate 73 is made of non-metallic carbon, and has a disc shape.
It is located inside the six carbon blocks 65. A cooling air passage hole 74 is formed at the center of the upper surface heat generating plate 73, and three upper surface terminal rods 75 are implanted at required intervals on the upper surface of the upper surface heat generating plate 73. A suitable number of slits (not shown) are provided in the upper surface heating plate 73 between the rods in the radial direction, and slits cut out from the outer peripheral side and slits cut out from the inner peripheral side are positioned at a required interval.

The upper end of the upper terminal rod 75 penetrates the upper heat insulating material 53, and the upper end of the upper terminal rod 75 is connected to the upper surface vacuum connector 51. The vacuum connector 51 for the upper surface and the three-phase AC power supply 76 for the upper surface are delta-connected, and a thermocouple 77 for the upper surface is provided at a required position on the inner tube 22. The three-phase AC power supply 76 for the upper surface is feedback-controlled by the temperature controller 79 for the upper surface so that the temperature of the installation part of the thermocouple 77 for the upper surface becomes a predetermined temperature. I have.

An exhaust port 81 is formed in the peripheral wall 43. The exhaust port 81 is provided at a required position below the peripheral wall 43, and an exhaust pipe 82 is connected to the exhaust port 81,
An exhaust vacuum pump 83 is provided on the exhaust pipe 82 so that the inside of the heater outer cylinder 41 is exhausted.

A plurality of cooling air introduction pipes 84 are provided through the peripheral wall 43 at predetermined intervals, and a cooling air introduction gate valve 85 is provided at an end of the cooling air introduction pipe 84 on the inlet side.
The cooling air introduction pipe 84 penetrates through the peripheral wall heat insulating material 55.

A cooling air discharge gate valve 86 is provided at the cooling air discharge port 49, and a cooling air discharge pipe 87 is connected to the discharge side of the cooling air discharge gate valve 86. A radiator 88 is provided downstream of the radiator 87, and an exhaust blower 89 is provided downstream of the radiator 88.

The operation will be described below.

The substrate inside the substrate cassette (not shown) is carried out of the load lock chamber 14 by the substrate transfer device, and the substrate 6 is transferred to the boat 18 in the load lock chamber 14 in multiple stages by the substrate transfer device. The boat 18 and the boat support 17 are loaded with the furnace port cap 35 and the lift arm 1 of the boat elevator (not shown).
5, the boat 18 and the boat support 1
7 is inserted into the inner tube 22, and the furnace port cap 35 is fitted airtightly into the furnace port 34.

The evacuation vacuum pump 83 is operated to evacuate the air inside the heater outer cylinder 41 (between the heater outer cylinder 41 and the outer tube 46).
The inside of 1 becomes a vacuum of about 10 ^-4 Torr.

When the three-phase AC power supply 76 for the upper surface operates, 3
The phase current is transferred from the upper surface vacuum connector 51 to the upper surface terminal rod 75.
And the three-phase alternating current flows to the upper surface heating plate 73. Since the upper surface heat generating plate 73 has a uniform thickness, the electric resistance also becomes uniform, and the upper surface heat generating plate 73 generates heat uniformly.

The electron beam from the upper surface heating plate 73 passes through the top of the outer tube 46, and the upper portion of the boat 18 is heated by the electron beam. The heater outer cylinder 41
Of the outer tube 4 is in a vacuum state.
Since 6 is heated by radiation, it has good thermal efficiency.

The temperature of the upper part of the inner tube 22 is detected by a thermocouple 77 for the upper surface, the detected temperature is compared with a set temperature by a temperature controller 79 for the upper surface, and the three-phase AC power supply for the upper surface is controlled by the temperature controller 79 for the upper surface. 76 is feedback controlled, and the temperature of the upper part of the inner tube is maintained at the set temperature.

Since the heat generating plate 73 for the upper surface is plate-shaped, there is no fear that the heat generating plate 73 will be broken even if heat is rapidly generated by the supply of a large current, and the life is prolonged.

When the side three-phase AC power supply 68 operates, 3
The phase current is transferred from the side vacuum connector 52 to the side terminal rod 67.
Then, the three-phase alternating current flows through the U-shaped conductive path of the side heat generating plate 57 one after another. That is, it flows from the right upper end to the left upper end portion 63 through the lower end portion, and then flows through the carbon block 65 adjacent to the left side to the upper right end of the side adjacent heat generating plate 57 on the left side. , From the right upper end to the left upper end 63 through the lower end.

Since the thickness of the heat generating plate 57 for the side surface is different in three stages, the electric resistance of the lower portion 61 having the smallest thickness becomes large and the amount of heat generation becomes large. Next, the electric resistance of the middle part 59 having a small thickness is reduced, and the calorific value is reduced.
Further, the electric resistance of the upper portion 58 having the largest thickness is the smallest, and the calorific value is further reduced. Thus, the side heat generating plate 57 has a heating value inversely proportional to the plate thickness, and the electron beam from the side heat generating plate 57 heats the lower portion of the outer tube 46 and the lower portion of the inner tube 22 more strongly. .

Since the heat from the lower portion 61 escapes to the furnace port flange 32, the vertical temperature distribution inside the inner tube 22 becomes substantially uniform.

Since the inside of the heater outer cylinder 41 is in a vacuum state, the outer tube 46 is radiatively heated by the side heat generating plate 57, so that the heat efficiency is good.

The temperature of the lower portion of the inner tube 22 is detected by the thermocouple 69 for the side surface, and the detected temperature is compared with the set temperature by the temperature controller 72 for the side surface. 68 is feedback-controlled, and the temperature of the lower portion of the inner tube 22 is maintained at the set temperature.

Since the side heat generating plate 57 is plate-shaped, there is no fear that the heat generating plate 57 will be broken even if the heat is rapidly generated by supplying a large current, and the life is prolonged. Thus, the inner tube is heated at a rate of 100 ° C./min.

The soaking process such as the impurity diffusion process is performed as follows.

The set temperature of the upper surface temperature controller 79 and the set temperature of the side surface temperature controller 72 are set to, for example, 900 ° C.

The three-phase alternating current from the three-phase AC power source 76 causes the upper surface heating plate 73 to generate heat evenly,
The inner tube 22 is formed by the upper surface thermocouple 77.
The temperature of the upper part is detected, and the temperature controller 7 for the upper surface is detected.
9, the detected temperature is compared with the set temperature of 900 ° C.,
The three-phase AC power supply 76 for the upper surface is feedback-controlled, and the temperature above the inner tube 22 is maintained at 900 ° C.

The side heat generating plate 57 generates heat in inverse proportion to the plate thickness by the three-phase alternating current from the side three-phase AC power supply 68, and the electron beam from the side heat generating plate 57 causes the lower part of the outer tube 46 to be heated. And the lower part of the inner tube 22 is heated more strongly.
Since heat from one part escapes to the furnace port flange 32, the temperature distribution in the vertical direction inside the inner tube 22 becomes substantially uniform. The temperature of the lower portion of the outer tube 46 is detected by the thermocouple 69 for the side surface, the detected temperature is compared with a set temperature of 900 ° C. by the temperature controller 72 for the side surface, and the three-phase AC power supply 68 for the side surface is feedback-controlled. The temperature at the bottom of the tube 22 is 900
C. is maintained.

The temperature distribution in the vertical direction inside the inner tube 22 has no temperature gradient as shown in FIG. 3 and is uniformly heated to a set temperature of 900 ° C. It is soaked.

In the case of a CVD process or the like, the process is performed as follows.

The set temperature of the upper surface temperature controller 79 is set to 900 ° C., and the side surface temperature controller 7
The required temperature gradient is set assuming that the set temperature of No. 2 is 880 ° C.

As described above, the three-phase AC power supply 76 for the upper surface is feedback-controlled by the thermocouple 77 for the upper surface and the temperature controller 79 for the upper surface, and the temperature of the upper portion of the inner tube 22 is maintained at 900 ° C.

The three-phase AC power supply 68 for the side surface is feedback-controlled by the thermocouple 69 for the side surface and the temperature controller 72 for the side surface, and the temperature of the lower portion of the inner tube 22 is maintained at 880 ° C.

As shown in FIG. 3, a temperature gradient of 880 ° C. is obtained at the lower portion of the inner tube 22 and 900 ° C. is obtained at the upper portion.

When the reactant gas is supplied from the reactant gas supply passage 36 on the load lock chamber 14 side, the reactant gas is supplied into the inner tube 22 through the reactant gas supply passage 36 on the furnace port flange 32 side. Then, the reaction gas rises inside the inner tube 22, and the substrate 6 is subjected to the CVD process. The reaction gas after the CVD process passes through a gap between the inner tube 22 and the outer tube 46, is discharged from the reaction gas discharge passage 38, and is recovered by a recovery device (not shown).

As shown in FIG. 4, the concentration of the reactant gas inside the inner tube 22 is high at the lower part and lower at the upper part in inverse proportion to the height. Since the temperature gradient inside the inner tube 22 is lower at the lower portion and higher at the upper portion, a high-concentration reaction gas is heated at a lower temperature at the lower portion of the inner tube 22. Since the low-concentration reaction gas is heated at a high temperature in the upper part of the inner tube 22, the film forming speed is equal in the lower part and the upper part, and the film thickness is constant in the lower part and the upper part.

In the above-described diffusion process or the process such as CVD, the upper surface heating plate 73 and the upper surface terminal rod 7 are formed.
5. The material of the side surface heat generating plate 57 and the side surface terminal rod 67 are all made of non-metallic carbon, and the other conductive components are the carbon block 65 and the carbon bolt 66, which may cause metal contamination. There is no. Further, since the material of the outer tube 46 is a heat insulating material such as silicon carbide, it is possible to prevent particles from entering the inside of the outer tube 46.

After the above processing is completed, the upper surface temperature controller 79 turns off the upper surface three-phase AC power supply 76.
The three-phase AC power supply 68 for the side is turned off by the temperature controller 72 for the side.

When the cooling air introduction gate valve 85 is opened, the cooling air flows through the cooling air introduction pipe 84 between the peripheral wall heat insulating material 55 and the outer tube 46.

When the exhaust blower 89 is operated and the cooling air discharge gate valve 86 is opened, the cooling air flowing between the peripheral wall heat insulating material 55 and the outer tube 46 rises, and the cooling air is discharged. The side heat generating plate 57 is cooled by air. The cooling air further rises, the upper heat generating plate 73 is cooled by the cooling air, and the heat inside the reaction furnace 31 is discharged to the outside. Thus, the side heat generating plate 57 and the upper surface heat generating plate 73 are forcibly cooled by the cooling air, and the inside of the reaction furnace 31 is rapidly cooled at a cooling rate of 50 ° C./min.

Since the side heat generating plate 57 and the upper surface heat generating plate 73 are plate-shaped, there is no danger of breaking even if they are rapidly cooled, and the life is prolonged.

The cooling air is supplied to the heating plate 7 for the upper surface.
The cooling air enters the cooling air outlet 54 through the periphery of the cooling air outlet 3 and the cooling air passage 74, and the cooling air is supplied to the cooling air outlet 4.
After flowing through the pipe 82 for cooling air exhaust through 9, the heat is exchanged by the radiator 88 and then released to the atmosphere.

After the side heat generating plate 57 and the upper surface heat generating plate 73 are cooled and the inside of the reaction furnace 31 is cooled to a predetermined temperature, the discharge blower 89 is stopped and the cooling air discharge gate valve is turned off. 86 and the cooling air introduction gate valve 85 are closed, and then the boat 18 is withdrawn from the reaction furnace 31.

Since the temperature of the reaction furnace 31 can be repeatedly raised and lowered rapidly, the throughput of the processing by the reaction furnace 31 is improved, and the production efficiency is improved.

During the above processing, heat generated above the upper surface heat generating plate 73 is blocked by the upper heat insulating material 53, and heat generated outside the side surface heat generating plate 57 is blocked by the peripheral wall heat insulating material 55. Is done. The heater outer cylinder 41 is cooled by a water cooling pipe (not shown).

The semiconductor manufacturing apparatus of the present invention is not limited to the above-described embodiment, and the heat generating plate may be made of a non-metallic non-metallic heat-resistant material other than carbon. The number of the plates 57 may be three or more, the side heat generating plate 57 may be cylindrical, the thickness of the side heat generating plate 57 may not be changed, and the change of the plate thickness may be four or more steps. Or that it may change continuously and become thinner downward, the upper surface heating plate 73 may be a triangle or more, and the upper surface heating plate 73 may not have a slit.
Of course, the outer tube 46 may be made of a heat-resistant material other than silicon carbide, and the temperature detection position may be an arbitrary position of the inner tube 22.

[0091]

As described above, according to the present invention, the reaction tube is heated by the heating plate as the heating element.
A rapid temperature rise of 0 ° C./min is possible, and even if rapid heat generation is repeated, there is no fear that the heat generation plate is broken, and the life of the heat generation plate is extended.

Since the heat generating plate is made of non-metal, there is no possibility that the substrate is contaminated with metal in the processing.

If the temperature is controlled and heated by the upper surface side heat generation plate and the side surface heat generation plate, the reaction tube can be heated to an arbitrary temperature, and both the temperature gradient heating and the uniform heating are possible.

If temperature control is performed by detecting two temperatures,
The temperature control mechanism is simplified, and the equipment cost is reduced.

If the plate thickness of the heat generating plate varies depending on the portion, the reaction tube can be heated with a temperature distribution inversely proportional to the plate thickness.

When cooling air flows through the space between the reaction vessel and the reaction tube, the heat generating plate is forcibly cooled, and the temperature of the reaction tube is rapidly lowered at 50 ° C./min. In combination with the rapid heating, various excellent effects such as an improvement in the throughput of the treatment and an improvement in the productivity are exhibited.

[Brief description of the drawings]

FIG. 1 is a sectional view of a reactor according to an embodiment of the present invention.

FIG. 2 is a perspective view of a side heat generating plate according to the embodiment.

FIG. 3 is a diagram showing a temperature distribution of a reactor in the embodiment.

FIG. 4 is a diagram showing a relationship between a temperature inside a reaction furnace, a reaction gas concentration and a film thickness in the embodiment.

FIG. 5 is a side view of a conventional example.

FIG. 6 is a sectional view of a reaction furnace in the conventional example.

[Explanation of symbols]

 6 Substrate 18 Boat 22 Inner Tube 31 Reactor 32 Heater Base 34 Furnace Port 35 Furnace Port Cap 41 Heater Outer Tube 46 Outer Tube 49 Cooling Air Outlet 54 Cooling Air Outlet 57 Side Heating Plate 65 Carbon Block 66 Carbon Bolts 67 Side terminal rod 68 Side three-phase AC power supply 69 Side thermocouple 72 Side temperature controller 73 Upper surface heating plate 75 Upper surface terminal rod 76 Upper surface three-phase AC power supply 77 Upper surface thermocouple 79 Upper surface temperature Controller 84 Cooling air inlet pipe 85 Cooling air inlet gate valve 86 Cooling air outlet gate valve 87 Cooling air outlet pipe

 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Norio Akutsu 3-14-20 Higashinakano, Nakano-ku, Tokyo Inside Kokusai Denki Co., Ltd. F term in the company (reference) 4K030 CA04 CA12 KA04 KA05 KA23 5F045 AF03 BB03 BB08 BB14 DP19 DQ05 EC02 EJ04 EJ10 EK06 EK08 EK21 EK25 EK27 EK30 GB05

Claims (4)

[Claims] In a semiconductor manufacturing apparatus having a reaction tube for accommodating a plurality of substrates and performing predetermined processing and a heating unit for heating the inside of the reaction tube, the heating unit generates heat by flowing an electric current. A semiconductor manufacturing apparatus, comprising: a heat generating plate, wherein the heat generating plate surrounds the periphery of the reaction tube. 2. The semiconductor manufacturing apparatus according to claim 1, wherein said heat generating plate has a different thickness depending on a portion. 3. A container surrounding the heating means and enclosing a space in which the heating means is present, and a pump for reducing the pressure in the container, wherein the pressure in the container is reduced during heating. Alternatively, the semiconductor manufacturing apparatus according to claim 2. 4. A semiconductor manufacturing apparatus, comprising: a container surrounding the heating means; means for introducing air into a space where the heating means is present after processing; and exhaust means for exhausting the introduced air. 4. The semiconductor manufacturing apparatus according to claim 1, 2 or 3.