JP2001198810A - Polishing method for substrate - Google Patents
Polishing method for substrateInfo
- Publication number
- JP2001198810A JP2001198810A JP2000012527A JP2000012527A JP2001198810A JP 2001198810 A JP2001198810 A JP 2001198810A JP 2000012527 A JP2000012527 A JP 2000012527A JP 2000012527 A JP2000012527 A JP 2000012527A JP 2001198810 A JP2001198810 A JP 2001198810A
- Authority
- JP
- Japan
- Prior art keywords
- suction
- substrate
- polishing
- peripheral portion
- jig
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は基板上に多層膜素子
を形成する際のラッピング研磨等に使用できる基板の研
磨方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for polishing a substrate which can be used for lapping and the like when forming a multilayer device on the substrate.
【0002】[0002]
【従来の技術】薄膜磁気ヘッドや薄膜集積回路等の多層
膜素子では基板上にアルミナやシリカ等の絶縁性層間膜
を積層して、これら層間膜内にホトリソグラフィ工程に
よって回路素子を作り込んでいる。例えば薄膜磁気ヘッ
ドを製造する場合には、AlTiC等のセラミック基板
の全面にCu材等の分離層を形成した後、基板上の多数
のショット領域に、NiFe材のヨーク、Cu材のコイ
ルやリード線、Au材の配線接続用パッド等を構成する
デバイス部をステップアンドリピート式露光によるホト
リソグラフィ工程で逐次形成し、各デバイス部をアルミ
ナの絶縁性層間膜で互いに適宜絶縁しつつ積層してい
る。そして、この積層時の層間膜や金属層の平坦化のた
めにラッピング研磨が行なわれる。2. Description of the Related Art In a multilayer film element such as a thin film magnetic head or a thin film integrated circuit, an insulating interlayer film such as alumina or silica is laminated on a substrate, and a circuit element is formed in the interlayer film by a photolithography process. I have. For example, in the case of manufacturing a thin film magnetic head, after forming a separation layer such as a Cu material over the entire surface of a ceramic substrate such as AlTiC, a yoke of a NiFe material, a coil or a lead of a Cu material are formed in a number of shot areas on the substrate. Device portions constituting lines, wiring connection pads of Au material and the like are sequentially formed by a photolithography process by step-and-repeat exposure, and the device portions are laminated while being appropriately insulated from each other by an insulating interlayer film of alumina. . Then, lapping polishing is performed to flatten the interlayer film and the metal layer during the lamination.
【0003】ところで、ラッピング用定盤は通常、水冷
されているために研磨時の発熱による温度上昇は殆ど無
いのに対して、図7に示すように自転する吸着治具1に
はロータリジョイント11を経て吸着面1aの吸着溝1
2に連通する吸気配管13が接続されており、これに加
えてさらに水冷配管を接続することは困難であるため吸
着治具1は水冷されていない。このような吸着治具1
の、多数の吸着溝12を形成した吸着面1aに基板2を
吸引保持させて定盤面5aに摺接させ、基板2下面のデ
バイス層(図示略)を研磨すると、研磨が進むにつれ
て、放熱されにくい吸着治具1の内周部が熱膨張して吸
着面1aが凸面に変形する(図8)。この状態で研磨を
続けると図9に示すように基板2下面のデバイス層の層
間膜が内周部で薄くなってしまう。なお、図は理解を容
易にするために概念的に描いてあり、薄くなった内周部
と外周部の膜厚差は実際には0.5μm程度である(以
上、従来技術1)。[0003] By the way, the lapping platen is usually water-cooled, so that there is almost no temperature rise due to heat generated during polishing. On the other hand, as shown in FIG. Through the suction groove 1 on the suction surface 1a.
The suction jig 1 is not water-cooled because it is difficult to connect a water-cooling pipe in addition to the suction pipe 13 communicating with the suction jig 1. Such a suction jig 1
When the substrate 2 is sucked and held on the suction surface 1a in which a large number of suction grooves 12 are formed and is brought into sliding contact with the platen surface 5a, and a device layer (not shown) on the lower surface of the substrate 2 is polished, heat is dissipated as polishing proceeds. The inner peripheral portion of the suction jig 1, which is difficult to thermally expand, deforms the suction surface 1a into a convex surface (FIG. 8). If polishing is continued in this state, as shown in FIG. 9, the interlayer film of the device layer on the lower surface of the substrate 2 becomes thinner in the inner peripheral portion. It should be noted that the drawing is conceptually drawn for easy understanding, and the thickness difference between the thinned inner peripheral portion and the thinned outer peripheral portion is actually about 0.5 μm (the prior art 1).
【0004】また、図10に概念的な断面を示すよう
に、薄膜磁気ヘッドの接触パッドとなる部分では、基板
上のデバイス層3の表面近くに、山形に突出するアルミ
ナ層31A〜31Cを多数形成してその表面にこれを横
断するようにNiFe材のヨーク層32を積層し、さら
にこれらをアルミナの絶縁膜33で覆っている。この絶
縁膜33は図11に示すようにヨーク層32の頂部が削
除されてその両端が磁極となって露出するまで研磨され
るが、製造上の理由によって上記山形アルミナ層31A
〜31Cの頂部の幅が外周部に比して中心部では厚くな
っているため、図11のように磁極の対向間隔dを全て
同じにするには中心部の研磨量を少なくするとともに、
外周部の研磨量を多くする必要がある(以上、従来技術
2)。As shown in a conceptual cross section in FIG. 10, a large number of alumina layers 31A to 31C projecting in a mountain shape near a surface of a device layer 3 on a substrate in a portion to be a contact pad of a thin film magnetic head. A yoke layer 32 made of a NiFe material is laminated on the surface thereof so as to cross the surface thereof, and these are further covered with an insulating film 33 made of alumina. As shown in FIG. 11, the insulating film 33 is polished until the top of the yoke layer 32 is removed and both ends are exposed as magnetic poles.
Since the width of the top of ~ 31C is thicker at the center than at the outer periphery, the amount of polishing at the center is reduced in order to make the facing distances d of the magnetic poles all the same as shown in FIG.
It is necessary to increase the polishing amount of the outer peripheral portion (the above is the related art 2).
【0005】さらに、図12に示すようにCu材等の分
離層21を形成すると基板2はその中心部が吸着治具1
の吸着面1aに対して凸面となるように湾曲するため、
ゴミや油を巻き込まないように基板2を吸着させるのが
難しく、吸着のやり直しや吸着作業の慎重を期すために
作業時間を要していた(以上、従来技術3)。Further, as shown in FIG. 12, when a separation layer 21 of Cu material or the like is formed, the center of the substrate 2 is
To be convex with respect to the suction surface 1a of
It is difficult to adsorb the substrate 2 so that dust and oil are not entrained, and work time is required in order to repeat the adsorption and to take care of the adsorption operation (the above-mentioned conventional technology 3).
【0006】[0006]
【発明が解決しようとする課題】そこで、上記従来技術
1については、図13に示すように吸着治具1の変形に
応じて定盤面5aを凹面に成形してデバイス層の層間膜
が内周部で薄くなるのを防止していた。また、上記従来
技術2についても、定盤面を凹面に成形して基板内周部
よりも基板外周部の研磨量が多くなるようにしている。
しかし、定盤面を所望の曲面に成形することは、加工、
清掃、測定等の手順を繰り返し行なう必要があるため、
多大の手間を要するという問題があった。また、従来技
術3についても吸着作業の迅速化が望まれていた。Therefore, in the above prior art 1, as shown in FIG. 13, the platen surface 5a is formed into a concave surface in accordance with the deformation of the suction jig 1 so that the interlayer film of the device layer has an inner peripheral surface. The section was prevented from becoming thin. Also, in the above-mentioned prior art 2, the surface of the surface plate is formed into a concave surface so that the polishing amount of the outer peripheral portion of the substrate is larger than the inner peripheral portion of the substrate.
However, forming the surface of the surface plate into a desired curved surface requires processing,
Since it is necessary to repeat procedures such as cleaning and measurement,
There was a problem that a lot of trouble was required. Also, with regard to the prior art 3, it has been desired to speed up the suction operation.
【0007】そこで、本発明はこのような課題を解決す
るもので、定盤面を曲面成形する必要がないためその手
間が削減されるとともに、吸着治具への基板の吸着作業
も迅速に行なうことができる基板の研磨方法を提供する
ことを目的とする。Accordingly, the present invention is to solve such a problem, and it is not necessary to form the surface of the base plate with a curved surface, so that the work is reduced and the work of sucking the substrate to the suction jig is performed quickly. It is an object of the present invention to provide a method of polishing a substrate, which can perform the polishing.
【0008】[0008]
【課題を解決するための手段】上記目的を達成するため
に、本第1発明では、吸着面(1a)に基板(2)を吸
着して自転する円形吸着治具(1)を、回転する定盤上
に配置し、上記基板(2)の下面を定盤面(5a)に摺
接させて研磨する研磨方法において、吸着面(1a)を
異なる曲率の凹面ないし凸面に成形した複数種の吸着治
具(1)を用意して、研磨目的に応じて上記複数種の吸
着治具を適宜選択使用する。In order to achieve the above object, according to the first aspect of the present invention, a circular suction jig (1) that rotates by suctioning a substrate (2) on a suction surface (1a) is rotated. In a polishing method in which the lower surface of the substrate (2) is slid on the surface of the surface plate (5a) and polished, the suction surface (1a) is formed into a concave or convex surface having different curvatures. A jig (1) is prepared, and the above-mentioned plurality of kinds of suction jigs are appropriately selected and used according to the polishing purpose.
【0009】本第1発明においては、吸着治具の吸着面
を凹面ないし凸面に成形してこれに基板を吸引保持さ
せ、定盤面に摺接させて研磨する。そして、研磨目的に
応じて、異なる曲率の吸着面を有する吸着治具を適宜選
択して使用するから、平坦な定盤面を使用しても種々の
研磨加工を行なうことができる。このように、定盤面を
曲面成形する必要がないから成形の手間が削減されると
ともに、適宜の曲率を有しているから吸着面への基板の
吸着作業も迅速に行なうことができるIn the first aspect of the present invention, the suction surface of the suction jig is formed into a concave surface or a convex surface, and the substrate is sucked and held on the surface, and is polished by slidingly contacting the surface of the platen. Then, various types of polishing can be performed even when a flat surface plate is used, since suction jigs having suction surfaces with different curvatures are appropriately selected and used according to the polishing purpose. As described above, since it is not necessary to form the surface of the base plate with a curved surface, the labor of molding is reduced, and the work of sucking the substrate to the suction surface can be performed quickly because of having an appropriate curvature.
【0010】本第2発明では、上記吸着面(1a)は凹
面であり、研磨熱による吸着治具(1)内周部の膨張変
形により吸着面(1a)が平坦面に矯正されるような上
記凹面(1a)の曲率を有する吸着治具を選択使用す
る。In the second invention, the suction surface (1a) is a concave surface, and the suction surface (1a) is corrected to a flat surface by expansion deformation of the inner peripheral portion of the suction jig (1) due to polishing heat. A suction jig having a curvature of the concave surface (1a) is selectively used.
【0011】本第2発明においては、研磨熱によって吸
着治具の内周部が膨張変形すると、予め凹面に成形され
た吸着面が上記変形によって平坦面に矯正される。これ
により、定盤面を平坦なままとしても基板の研磨面を平
坦に研磨することができる。In the second aspect of the invention, when the inner peripheral portion of the suction jig expands and deforms due to the polishing heat, the suction surface previously formed into a concave surface is corrected to a flat surface by the deformation. Thus, the polished surface of the substrate can be polished flat even if the surface of the platen is kept flat.
【0012】本第3発明では、上記吸着面(1a)は凹
面であり、上記基板(2)の外周部の研磨量が内周部に
比して所定量大きくなるような上記凹面の曲率を有する
吸着治具(1)を選択使用する。In the third aspect of the present invention, the suction surface (1a) is a concave surface, and the curvature of the concave surface such that the polishing amount of the outer peripheral portion of the substrate (2) becomes larger than the inner peripheral portion by a predetermined amount is set. Select the suction jig (1) to use.
【0013】本第3発明は、薄膜磁気ヘッドの製造工程
において、基板(2)面上のデバイス層(3)に多数形
成された接触パッド部を成形するに際し、平坦な定盤面
(5a)でヨーク層(32)を削除露出させて形成され
る磁極の対向間隔(d)を、内周部と外周部でほぼ同じ
にする等の用途に好適に適用できる。According to a third aspect of the present invention, in the process of manufacturing a thin-film magnetic head, a large number of contact pads formed on the device layer (3) on the surface of the substrate (2) are formed on a flat surface (5a). The present invention can be suitably applied to applications in which the opposing interval (d) of the magnetic pole formed by exposing and removing the yoke layer (32) is substantially the same between the inner peripheral portion and the outer peripheral portion.
【0014】本第4発明では、上記吸着面(1a)は凸
面であり、上記基板(2)の内周部の研磨量が外周部に
比して所定量大きくなるような上記凸面の曲率を有する
吸着治具(1)を選択使用する。In the fourth aspect of the present invention, the suction surface (1a) is a convex surface, and the curvature of the convex surface such that the polishing amount of the inner peripheral portion of the substrate (2) is larger than the outer peripheral portion by a predetermined amount is set. Select the suction jig (1) to use.
【0015】本第4発明は、薄膜磁気ヘッドの製造工程
において、基板(2)面上のデバイス層(3)に多数形
成された接触パッド部を成形するに際し、平坦な定盤面
(5a)でヨーク層(32)を削除露出させて形成され
る磁極の対向間隔(d)を、内周部と外周部でほぼ同じ
にする等の用途に好適に適用できる。According to a fourth aspect of the present invention, in the process of manufacturing a thin-film magnetic head, a large number of contact pads formed on the device layer (3) on the surface of the substrate (2) are formed with a flat surface plate (5a). The present invention can be suitably applied to applications in which the opposing interval (d) of the magnetic pole formed by exposing and removing the yoke layer (32) is substantially the same between the inner peripheral portion and the outer peripheral portion.
【0016】なお、上記カッコ内の符号は、後述する実
施形態に記載の具体的手段との対応関係を示すものであ
る。The reference numerals in the parentheses indicate the correspondence with specific means described in the embodiments described later.
【0017】[0017]
【発明の実施の形態】(第1実施形態)図1において、
吸着治具1の上面中心には従来技術で説明したようにロ
ータリジョイント11を介して真空ホース13が結合さ
れており、吸着治具1の吸着面1aに形成された吸着溝
12は図示しない内部通路によって上記真空ホース13
に連通している。吸着面1aは例えば内周部が外周部よ
りも0.5μm程度凹陥した凹面としてあり、ここに、
デバイス層(図示略)を下面に形成した基板2が上記吸
着面1aに倣って湾曲した状態で吸引固定されている。
なお、図1を含めて以下の各図では、理解を容易にする
ために吸着治具と基板の厚みの比等は実際とは異なって
描いてあり、また凹面および凸面の程度も実際より大き
く描いてある。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) In FIG.
A vacuum hose 13 is connected to the center of the upper surface of the suction jig 1 via the rotary joint 11 as described in the related art, and a suction groove 12 formed on the suction surface 1a of the suction jig 1 has an interior (not shown). The above-mentioned vacuum hose 13
Is in communication with The suction surface 1a is, for example, a concave surface in which the inner peripheral portion is recessed by about 0.5 μm from the outer peripheral portion.
A substrate 2 having a device layer (not shown) formed on the lower surface is suction-fixed in a curved state following the suction surface 1a.
In the following drawings including FIG. 1, the ratio of the thickness of the suction jig to the substrate is drawn differently from the actual one for easy understanding, and the degree of the concave surface and the convex surface is larger than the actual one. It is painted.
【0018】吸着治具1に吸引保持された基板2を、フ
ェーシング装置で平坦に加工した定盤面5aに当接さ
せ、吸着治具1を自転させつつ基板2の研磨を開始する
と、研磨時の発熱によって、放熱されにくい吸着治具1
の内周部は熱膨張するが、吸着治具1の吸着面1aは上
述のように内周部が常温状態で適度に凹陥させてあるた
め、図2に示すように上記吸着面1aは熱膨張すること
によって定盤面5aにほぼ平行な平面に矯正される。こ
れにより、従来のように定盤面5aを凹面に成形するこ
となく、基板2の下面に形成されたデバイス層の層間膜
等を平坦に研磨することができる。なお、この場合、凹
状の吸着面の曲率が異なる複数種の吸着治具を用意し
て、熱膨張時の平坦度が最も良いものを選択して使用す
る。When the substrate 2 sucked and held by the suction jig 1 is brought into contact with the platen surface 5a, which has been flattened by a facing device, and polishing of the substrate 2 is started while the suction jig 1 is rotated, the polishing at the time of polishing is started. Suction jig 1 that is not easily dissipated by heat
The inner peripheral portion of the suction jig 1 thermally expands. However, since the inner peripheral portion of the suction jig 1 is appropriately depressed at room temperature as described above, as shown in FIG. By expansion, it is corrected to a plane that is substantially parallel to the platen surface 5a. Thus, the interlayer film of the device layer and the like formed on the lower surface of the substrate 2 can be polished flat without forming the platen surface 5a as a concave surface unlike the related art. In this case, a plurality of kinds of suction jigs having concave concave suction surfaces having different curvatures are prepared, and one having the best flatness during thermal expansion is selected and used.
【0019】ところで、従来技術で説明したように、C
u材等の分離層21(図3)を形成すると基板2はその
中心部が吸着治具1の吸着面1aに対して凸面となるよ
うに湾曲するが、本実施形態では上述のように吸着面1
aを常温(すなわち研磨開始前)で凹面に形成している
から、ゴミや油を巻き込まないように基板2を吸着させ
るのが比較的容易である。特に、図3に示すように、基
板2の曲率が吸着面1aの曲率よりも大きい場合には、
中心部上面に把手41を形成し外周部の下面にゴム板4
2を接合した円形の押付け治具4を使用して基板2の外
周部を押すようにすると、基板2の吸着をより容易に行
なうことができる。By the way, as described in the prior art, C
When the separation layer 21 (FIG. 3) of u material or the like is formed, the substrate 2 is curved so that the center thereof is convex with respect to the suction surface 1a of the suction jig 1, but in the present embodiment, the suction is performed as described above. Face 1
Since a is formed in a concave surface at normal temperature (that is, before the start of polishing), it is relatively easy to adsorb the substrate 2 so that dust and oil are not involved. In particular, as shown in FIG. 3, when the curvature of the substrate 2 is larger than the curvature of the suction surface 1a,
A handle 41 is formed on the upper surface of the central portion, and a rubber plate 4 is formed on the lower surface of the outer peripheral portion.
When the outer peripheral portion of the substrate 2 is pressed using the circular pressing jig 4 to which the substrate 2 is joined, the suction of the substrate 2 can be performed more easily.
【0020】(第2実施形態)図4には、凹面とした吸
着治具1(図1参照)の吸着面1aに吸引保持された基
板2下面のデバイス層3の概念的な断面を示し、薄膜磁
気ヘッドの接触パッドとなる部分では、山形に突出する
アルミナ層31A〜31Cの表面にこれを横断するよう
にNiFe材のヨーク層32が積層され、これらはアル
ミナの絶縁膜33で覆われている。そして、アルミナ層
31A〜31C、ヨーク層32、および絶縁膜33は、
吸着治具1の吸着面1aの湾曲に倣って凹状に湾曲して
いる。なお、山形アルミナ層31A〜31Cの頂部の幅
は、従来技術で説明したように、外周部に比して中心部
では大きくなっている。この場合、上記吸着面1aの湾
曲の程度は例えば外周部に対して内周部が1μm程度凹
陥したものとし、第1実施形態におけるよりも大きくす
る。(Second Embodiment) FIG. 4 shows a conceptual cross section of the device layer 3 on the lower surface of the substrate 2 sucked and held on the suction surface 1a of the suction jig 1 having a concave surface (see FIG. 1). In a portion to be a contact pad of the thin-film magnetic head, a yoke layer 32 made of a NiFe material is laminated on the surfaces of the alumina layers 31A to 31C projecting in a mountain-shape so as to cross over the alumina layers 31A to 31C. I have. The alumina layers 31A to 31C, the yoke layer 32, and the insulating film 33 are
The suction jig 1 is concavely curved following the curvature of the suction surface 1a. Note that the width of the tops of the mountain-shaped alumina layers 31A to 31C is larger at the center than at the outer periphery, as described in the related art. In this case, the degree of curvature of the attraction surface 1a is, for example, such that the inner periphery is depressed by about 1 μm with respect to the outer periphery, and is larger than that in the first embodiment.
【0021】このようなデバイス層3の絶縁膜33を、
フェーシング装置で平坦に加工した定盤面5aで研磨す
ると、図4の鎖線で示すように、中心部は研磨量が少な
くなるとともに、外周部の研磨量は多くなり、山形アル
ミナ層31C〜31Aの頂部の研磨量がこの順に大きく
なることにより、削除されて露出するヨーク層32両端
の磁極の対向間隔dが内周部と外周部でほぼ同じにな
る。このようにして、従来のように定盤面5aを凹面に
成形することなく、基板2の下面に形成されたデバイス
層3の、各接触パッドの磁極間隔dをほぼ同じにするこ
とができる。なお、この場合、凹状とした吸着面1a
(図1)の曲率が異なる複数種の吸着治具1を用意し
て、接触パッドの磁極間隔dのバラツキが最も小さくな
るものを選択して使用する。The insulating film 33 of the device layer 3 is
When the polishing is performed on the surface of the platen surface 5a which has been flattened by the facing device, as shown by the dashed line in FIG. 4, the polishing amount decreases in the central portion and the polishing amount in the outer peripheral portion increases, and the top portions of the mountain-shaped alumina layers 31C to 31A As the polishing amount increases in this order, the facing distance d between the magnetic poles at both ends of the yoke layer 32 that is removed and exposed becomes substantially the same between the inner peripheral portion and the outer peripheral portion. In this manner, the distance d between the magnetic poles of each contact pad of the device layer 3 formed on the lower surface of the substrate 2 can be made substantially the same without forming the platen surface 5a as a concave surface as in the related art. In this case, the concave suction surface 1a is used.
A plurality of types of suction jigs 1 having different curvatures (see FIG. 1) are prepared, and a jig having the smallest variation in the magnetic pole interval d of the contact pads is selected and used.
【0022】(第3実施形態)上記第2実施形態では、
基板2上のデバイス層3に山形アルミナ層31A〜31
Cを形成した後に基板2を吸着治具1の凹状の吸着面1
aに吸着保持させて、平坦な定盤面5aで研磨するよう
にしたが、これに代えて、図5に示すように、吸着治具
1の吸着面1aを凸面とし、これに、山形アルミナ層3
1A〜31Cを形成する前のデバイス層3が積層された
基板2を吸着保持させる。大部分のデバイス層3を形成
し終った基板2は図5に示すように内周部が外周部に対
して3μm程度凹陥して吸着治具1側へ大きく凹状に湾
曲するから、吸着面1aの内周部が外周部に対して1μ
m程度膨出している吸着治具1を使用すると、ゴミや油
を巻き込むことなく基板2を良好に吸引保持することが
できる。なお、この場合、凸状の吸着面1aの曲率が異
なる複数種の吸着治具1を用意して、最も適切なものを
選択使用する。(Third Embodiment) In the second embodiment,
The angled alumina layers 31A to 31 are formed on the device layer 3 on the substrate 2.
After the formation of C, the substrate 2 is placed on the concave suction surface 1 of the suction jig 1.
a, and is polished on a flat platen surface 5a. Instead, as shown in FIG. 5, the adsorption surface 1a of the adsorption jig 1 is made to be a convex surface, and 3
The substrate 2 on which the device layers 3 before forming 1A to 31C are stacked is held by suction. As shown in FIG. 5, the substrate 2 on which most of the device layers 3 have been formed has an inner peripheral portion depressed by about 3 μm with respect to the outer peripheral portion and is largely concavely curved toward the suction jig 1. 1 μm of inner circumference to outer circumference
When the suction jig 1 swelling about m is used, the substrate 2 can be satisfactorily sucked and held without involving dust or oil. In this case, a plurality of types of suction jigs 1 having different curvatures of the convex suction surface 1a are prepared, and the most appropriate one is selected and used.
【0023】このような吸着治具1を使用して基板2上
に形成されたデバイス層3を平坦な定盤面で研磨する
と、デバイス層3の最表面の層間膜は内周部が薄くなる
ように研磨される。このように研磨された層間膜(第2
実施形態の図4に符号34で示す)上に山形アルミナ層
31A〜31C、ヨーク層32、絶縁膜33を形成した
基板2を、平坦かあるいは第1実施形態で説明したよう
な常温でやや凹状に湾曲させた吸着治具1の吸着面1a
に吸引保持させると、内周部を薄くした層間膜34はそ
の下面が第2実施形態の図4で示すと同様に下方へ凹状
に湾曲する断面形状となる。このようなデバイス層3の
絶縁膜33を、フェーシング装置で平坦に加工した定盤
面5aで研磨すると、第2実施形態と同様に(図4の鎖
線)、ヨーク層32の頂部を削除して露出させた磁極の
対向間隔dを内周部と外周部でほぼ同じにすることがで
きる。When the device layer 3 formed on the substrate 2 is polished on a flat platen surface using such an adsorption jig 1, the interlayer film on the outermost surface of the device layer 3 becomes thinner at the inner peripheral portion. Polished. The polished interlayer film (second
The substrate 2 on which the angled alumina layers 31A to 31C, the yoke layer 32, and the insulating film 33 are formed on the substrate 2 is flat or slightly concave at normal temperature as described in the first embodiment. Suction surface 1a of suction jig 1 curved
When the film is sucked and held, the interlayer film 34 having the thinner inner peripheral portion has a cross-sectional shape in which the lower surface is concavely curved downward as shown in FIG. 4 of the second embodiment. When the insulating film 33 of the device layer 3 is polished on the platen surface 5a which has been flattened by a facing device, the top of the yoke layer 32 is removed and exposed similarly to the second embodiment (chain line in FIG. 4). The opposed distance d between the magnetic poles can be made substantially the same between the inner peripheral portion and the outer peripheral portion.
【0024】(他の実施形態)なお、自公転機能の無い
成膜装置を使用するとデバイス層3の膜厚分布が図6の
等厚線図で示すように偏心する。そこで、このような場
合には上述の凹面ないし凸面の吸着面1aを有する吸着
治具1上に偏心荷重を設けて、膜厚の厚い部分を多く研
磨するようにすると良い。(Other Embodiments) When a film forming apparatus having no self-orbiting function is used, the film thickness distribution of the device layer 3 is decentered as shown by an isometric line diagram in FIG. Therefore, in such a case, it is preferable that an eccentric load is provided on the suction jig 1 having the above-mentioned concave or convex suction surface 1a to polish a large portion of the film thickness.
【0025】[0025]
【発明の効果】以上のように、本発明の基板の研磨方法
によれば、定盤面を曲面成形する必要がないためその手
間が削減されるとともに、吸着治具への基板の吸着作業
も迅速に行なうことができる。As described above, according to the method for polishing a substrate of the present invention, since it is not necessary to form the surface of the base plate into a curved surface, the labor can be reduced, and the work of sucking the substrate to the suction jig can be performed quickly. Can be performed.
【図1】本発明の第1実施形態における、基板を吸引保
持した吸着治具の断面図である。FIG. 1 is a cross-sectional view of a suction jig that suctions and holds a substrate according to a first embodiment of the present invention.
【図2】本発明の第1実施形態における、基板を吸引保
持した吸着治具の断面図である。FIG. 2 is a cross-sectional view of a suction jig holding a substrate by suction according to the first embodiment of the present invention.
【図3】本発明の第1実施形態における、吸着治具に基
板を吸引保持させる際の断面図である。FIG. 3 is a cross-sectional view when a suction jig suctions and holds a substrate according to the first embodiment of the present invention.
【図4】本発明の第2実施形態における、デバイス層の
断面図である。FIG. 4 is a sectional view of a device layer according to a second embodiment of the present invention.
【図5】本発明の第3実施形態における、吸着治具に基
板を吸引保持させる際の断面図である。FIG. 5 is a cross-sectional view when a suction jig sucks and holds a substrate according to a third embodiment of the present invention.
【図6】本発明の他の実施形態における、基板の等厚線
図である。FIG. 6 is an isometric view of a substrate according to another embodiment of the present invention.
【図7】従来例における、基板を吸引保持した吸着治具
の断面図である。FIG. 7 is a cross-sectional view of a suction jig that sucks and holds a substrate in a conventional example.
【図8】従来例における、基板を吸引保持した吸着治具
の断面図である。FIG. 8 is a cross-sectional view of a suction jig that sucks and holds a substrate in a conventional example.
【図9】従来例における、基板を吸引保持した吸着治具
の断面図である。FIG. 9 is a cross-sectional view of a suction jig that sucks and holds a substrate in a conventional example.
【図10】従来例における、デバイス層の断面図であ
る。FIG. 10 is a sectional view of a device layer in a conventional example.
【図11】従来例における、デバイス層の断面図であ
る。FIG. 11 is a cross-sectional view of a device layer in a conventional example.
【図12】従来例における、基板を吸着する直前の状態
を示す吸着治具の断面図である。FIG. 12 is a cross-sectional view of a suction jig in a conventional example, showing a state immediately before sucking a substrate.
【図13】従来例における、基板を吸引保持した吸着治
具の断面図である。FIG. 13 is a cross-sectional view of a suction jig that sucks and holds a substrate in a conventional example.
1…吸着治具、1a…吸着面、2…基板、3…デバイス
層、31A〜31C…山形アルミナ層、32…ヨーク
層、33…絶縁膜、4…押付け治具、5a…定盤面。DESCRIPTION OF SYMBOLS 1 ... Suction jig, 1a ... Suction surface, 2 ... Substrate, 3 ... Device layer, 31A-31C ... Angled alumina layer, 32 ... Yoke layer, 33 ... Insulating film, 4 ... Pressing jig, 5a ... Surface plate surface.
Claims (4)
着治具を、回転する定盤上に配置し、前記基板の下面を
定盤面に摺接させて研磨する研磨方法において、前記吸
着面を異なる曲率の凹面ないし凸面に成形した複数種の
吸着治具を用意して、研磨目的に応じて前記複数種の吸
着治具を適宜選択使用するようにした基板の研磨方法。1. A polishing method in which a circular suction jig for rotating a substrate by sucking a substrate on a suction surface is disposed on a rotating surface plate and polishing the lower surface of the substrate by sliding the lower surface of the substrate against the surface surface. A substrate polishing method in which a plurality of types of suction jigs whose surfaces are formed into concave or convex surfaces having different curvatures are prepared, and the plurality of types of suction jigs are appropriately selected and used according to a polishing purpose.
吸着治具内周部の膨張変形により前記吸着面が平坦面に
矯正されるような前記凹面の曲率を有する吸着治具を選
択使用する請求項1に記載の基板の研磨方法。2. A suction jig having a concave curvature, wherein the suction surface is concave, and the suction surface is corrected to a flat surface by expansion deformation of an inner peripheral portion of the suction jig due to polishing heat. The method for polishing a substrate according to claim 1.
周部の研磨量が内周部に比して所定量大きくなるような
前記凹面の曲率を有する吸着治具を選択使用する請求項
1に記載の基板の研磨方法。3. A suction jig having a concave curvature, wherein the suction surface is a concave surface, and a polishing amount of an outer peripheral portion of the substrate is larger by a predetermined amount than an inner peripheral portion. 2. The method for polishing a substrate according to item 1.
周部の研磨量が外周部に比して所定量大きくなるような
前記凸面の曲率を有する吸着治具を選択使用する請求項
1に記載の基板の研磨方法。4. A suction jig having a curvature of the convex surface such that the suction surface is a convex surface, and a polishing amount of an inner peripheral portion of the substrate is larger by a predetermined amount than an outer peripheral portion thereof. 2. The method for polishing a substrate according to item 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000012527A JP2001198810A (en) | 2000-01-21 | 2000-01-21 | Polishing method for substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000012527A JP2001198810A (en) | 2000-01-21 | 2000-01-21 | Polishing method for substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2001198810A true JP2001198810A (en) | 2001-07-24 |
Family
ID=18540234
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000012527A Pending JP2001198810A (en) | 2000-01-21 | 2000-01-21 | Polishing method for substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2001198810A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107662155A (en) * | 2016-07-27 | 2018-02-06 | 快递股份有限公司 | The manufacture method of workpiece erratic star wheel and workpiece erratic star wheel |
CN110014717A (en) * | 2018-01-08 | 2019-07-16 | 阳程科技股份有限公司 | Application of a surface device and its applying method |
-
2000
- 2000-01-21 JP JP2000012527A patent/JP2001198810A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107662155A (en) * | 2016-07-27 | 2018-02-06 | 快递股份有限公司 | The manufacture method of workpiece erratic star wheel and workpiece erratic star wheel |
CN110014717A (en) * | 2018-01-08 | 2019-07-16 | 阳程科技股份有限公司 | Application of a surface device and its applying method |
CN110014717B (en) * | 2018-01-08 | 2021-10-08 | 阳程科技股份有限公司 | Curved surface laminating device and laminating method thereof |
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