JP2001195989A - Plasma display panel - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide PDP which can easily make a dielectric layer relatively and suppress the increasing of consumption power in even a large screen and high distinctness, and can be driven with a good luminescence efficiency and a display property. SOLUTION: The dielectric layer 24 includes the first dielectric layer 241 being formed from any one thin film of SiO2, Al2O3 or ZnO, or glass of composition containing any one of, PbO or Bi2O3 and being formed to cover several pairs of display electrodes, and the second dielectric layer 242 being formed from glass of composition having a dielectric constant ε and an area of a loss coefficient tanδ below 0.12 and being coated on the first dielectric layer 241.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma display panel used for a display device or the like, and more particularly, to a dielectric layer.

[0002]

2. Description of the Related Art In recent years, high-definition display (high-definition, etc.)
There has been a demand for higher performance displays, such as larger screens and larger screens, and various displays have been researched and developed. As a typical display, CR
Examples include a T display, a liquid crystal display (LCD), and a plasma display panel (PDP).

[0003] Among them, the PDP is a kind of gas discharge panel, in which two thin glass plates are opposed to each other via a partition (rib), and a plurality of pairs of display electrodes (generally used) are provided on one glass plate between the partitions. Ag or C to ensure good conductivity
(composed of r / Cu / Cr), a dielectric layer and a phosphor layer in this order, a discharge gas is sealed between the two glass plates and hermetically bonded, and a discharge is performed in the discharge gas to emit fluorescence. Things. Therefore, it is excellent in that a depth size and a weight are hardly increased like a CRT even when the screen is enlarged, and a problem that a viewing angle is limited like an LCD can be avoided.

[0004] Of these, the dielectric layer is generally made of low melting point glass. In this case, have sufficient withstand voltage,
Each property such as high transparency and low firing temperature (specifically, firing at 600 ° C. or lower) is desired. As an actual glass for a dielectric layer, a glass containing lead oxide (PbO) or bismuth oxide (Bi ₂ O ₃ ) (dielectric constant ε =
10 to 15) are often used (for example,
50769).

[0005] By the way, in PDPs where electric products with as low power consumption as possible are desired, it is expected that the power consumption during driving is further reduced.
In particular, the power consumption of PDPs has been increasing due to the recent trend toward larger screens and higher definition of displays. Therefore, it is desired to more actively realize power saving.

As one of the methods for realizing power saving, there is a device for reducing the dielectric constant ε of the dielectric layer. Since the dielectric constant ε of the dielectric layer is proportional to the amount of electric charge stored in the dielectric layer, the dielectric layer having a dielectric constant ε lower than that of a PbO-based or Bi ₂ O ₃ -based composition has The amount of charge accumulated in the body layer can be further reduced, and PDP
Power consumption can be reduced. As a glass composition having a dielectric constant ε lower than that of a composition such as PbO-based glass or Bi ₂ O ₃ -based glass, specifically, Japanese Patent Application Laid-Open No. 8-77930 discloses Na ₂ O having a dielectric constant ε of about 6.2 to 7.6. -B ₂ O ₃ -SiO ₂
Glasses such as Na ₂ O—B ₂ O ₃ —ZnO based glass are disclosed. By using such a glass of each composition for the dielectric layer, the amount of discharge current of the pixel cell with respect to a constant voltage applied to a plurality of pairs of display electrodes can be reduced to less than that of the conventional case (to about 1/2 or less). Is possible), PD
The power consumption of P can be reduced. Further, since the dielectric layer can be formed without using a PbO-based glass in the method disclosed in this publication, an effect of avoiding problems such as environmental pollution caused by Pb can be obtained.

The above-mentioned Na ₂ O—B ₂ O ₃ —SiO ₂ -based glass and Na ₂ O—B ₂ O ₃ —ZnO-based glass are actually reduced in softening point (specifically, the firing temperature is 550 ° C.). ° C. for such purpose of the 600 set in the range of ° C.) easily to manufacturing process, the Na ₂ O (composition of the entire dielectric layer) is used by adding more than 10 wt%.

[0008]

However, the above-mentioned Na ₂ O—B ₂ O ₃ —SiO ₂ system, Na ₂ O—B ₂ O ₃ —ZnO
When the dielectric layer is composed of glass such as a glass, the Ag or Cu component of the display electrode is mixed into the dielectric layer and tends to precipitate as colloidal particles (the latest plasma display manufacturing technology. Edition, pp. 234). The colloid particles have a property of reflecting visible light of a specific wavelength. For this reason, the dielectric layer is colored yellow (that is, yellowed), which causes an undesirable coloring of light emission generated in the discharge space and a reduction in the amount of light that should be originally obtained. It can be. Addition of more than 10 wt% of Na ₂ O to the glass composition of the dielectric layer may cause the yellowing. For this reason, the generation of the colloid particles should be avoided.

Further, Na ₂ O is added to the glass composition of the dielectric layer.
When more than 10 wt% is added, adverse effects such as increasing the tan δ value indicating the power loss of the dielectric layer also occur. Specifically, the dielectric layer (20 to 50 μm thickness)
May cause a problem that the withstand voltage drops to about 1 kV. As described above, at present, the plasma display panel mainly has the following three problems.

[0010] * 1. To reduce the dielectric constant ε of the dielectric layer to save power and improve luminous efficiency. * 2. To make the manufacturing process easy by setting the softening point of the dielectric layer low. * 3. Obtaining good display performance by preventing yellowing of the dielectric layer and ensuring transparency. The present invention has been made in view of the above three problems, and its object is to relatively easily fabricate a dielectric layer, to suppress an increase in power consumption even when a large screen and high definition are used. It is an object of the present invention to provide a PDP which can be driven with higher luminous efficiency and display performance than the above.

[0011]

Means for Solving the Problems In order to solve the above problems, the inventors of the present invention have conducted intensive studies and as a result, a discharge gas has been sealed between a first plate and a second plate provided to face each other. A plurality of pairs of display electrodes made of Ag or Cu are formed on the surface of the first plate facing the second plate, and a dielectric layer is formed on the surface of the first plate so as to cover the plurality of pairs of display electrodes. In a plasma display panel having a covered configuration, the dielectric layer comprises:
It is made of a glass having a composition containing at least ZnO and 10 wt% or less of R ₂ O and not containing PbO and Bi ₂ O _3, and a product of its dielectric constant ε and its loss coefficient tan δ is a value of 0.12 or less. Characteristic plasma display panel (where R is Li, Na, K, Rb, Cs, Cu,
Ag).

By adopting such a glass composition for the dielectric layer, the inventors of the present invention can reduce the R ₂ O component in the dielectric layer, suppress the deposition of the colloid particles, and improve the dielectric layer. It has been found that it is possible to obtain the effect of reducing power consumption more than before while securing the transparency of. Further, they have found that the dielectric layer can be fired at a firing temperature of 600 ° C. or less. Therefore, according to the present invention, it is possible to drive a plasma display panel having good display performance under low power consumption and excellent luminous efficiency while reducing the manufacturing cost required for firing the dielectric layer and the like. Become. Since Pb is not used in the above glass composition,
The effect of avoiding problems such as environmental pollution caused by b is also obtained.

The value of “ε · tan δ is equal to or less than 0.12” is a value necessary for obtaining good power saving of the present invention, and is a value clarified in an embodiment described later. The dielectric layer desirably has a dielectric constant ε of 7 or less, because the value of ε · tanδ can be effectively reduced. Here, as the specific glass composition of the dielectric layer, the following respective glass compositions have been found to be desirable in each embodiment described later.

First, the dielectric layer contains P ₂ O _{5 of 10} to 25 wt.
%, ZnO 20-35 wt%, B ₂ O ₃ 30-40 wt%, S
iO ₂ is contained in an amount of ₅ to 12 wt%, and R ₂ O and D
ZnO containing O as an upper limit of 10 wt% each
-P may be constituted by ₂ O ₅ based glass. Where D is Mg,
It is assumed that the material is selected from Ca, Ba, Sr, Co, Cr, and Ni.

Further, the dielectric layer may include P_TwoO_FiveIs 42 ~ 50w
t%, ZnO 35-50wt%, Al _TwoO_ThreeIs 7 ~ 14wt
%, Na_TwoZnO- containing O as an upper limit of 5 wt%
P_TwoO_FiveIt may be composed of a system glass. Further the dielectric
The layer is composed of 20 to 44 wt% of ZnO, B_TwoO_ThreeIs 38 to 55 wt%,
SiO_TwoIs contained at 5 to 12 wt%, and further, R_TwoO and
Zn containing MO in an amount of 10 wt% as an upper limit.
It may be composed of O-based glass.

Where M is Mg, Ca, Ba, Sr, C
o and Cr. Further, the dielectric layer contains ZnO of 20 to 43 wt% and B ₂ O ₃ of 38 to 55%.
wt% SiO ₂ is 5~12wt%, Al ₂ O ₃ is contained in 1-10%, further, 10 wt% R ₂ O and MO, respectively
May be constituted by a ZnO-based glass containing as an upper limit.

Further, the dielectric layer is made of ZnO of 1 to 15 watts.
t%, B ₂ O ₃ is 20~40wt%, SiO ₂ is 10~30wt
%, Al ₂ O ₃ is 5 to 25 wt%, Li ₂ O is ₃ to 10 wt%,
MO may be composed of ZnO-based glass having a composition of 2 to 15 wt%. Further, the dielectric layer contains ZnO of 35 to
60wt%, B ₂ O ₃ is 25~45wt%, SiO ₂ is 1~10.5w
%, Al ₂ O _{3 at 1} to 10 wt%, and Na ₂ O
May be composed of ZnO-based glass containing 5 wt% as an upper limit.

Further, the dielectric layer is made of ZnO of 35 to 60 watts.
t%, B ₂ O ₃ is 25~45wt%, SiO ₂ is 1~12wt%,
Al ₂ O ₃ is contained at 1-10 wt%, and K ₂ O is 5 wt%
% May be contained as the upper limit. Further, the dielectric layer is made of Nb ₂ O ₅ of 9 to 19 watts.
t%, ZnO is 35~60wt%, B ₂ O ₃ is 20~38wt%,
SiO ₂ is 1~10.5wt%, Li ₂ O may be composed of ZnO-Nb ₂ O ₅ based glass that contains a 5 wt% as an upper limit.

In the present invention, the specific glass composition of the dielectric layer may be the following glass composition,
The ₂ O component may not be used it has been demonstrated the examples described below. That is, the dielectric layer is composed of P
₂₀ to 30 wt% of ₂ O _{5, 30} to 40 wt% of ZnO, and B ₂ O ₃
It is made of glass having a composition of 30 to 45 wt% and SiO _{2 of 1} to 10 wt%, and the product of its dielectric constant ε and its loss coefficient tan δ is 0.2.
It can be 12 or less.

The dielectric layer contains 30 to 45% by weight of ZnO,
It is made of glass having a composition of B2O3 of 40 to 60% by weight and SiO2 of 1 to 15% by weight, and has a dielectric constant [epsilon] and a loss coefficient tan [delta].
May be a value less than or equal to 0.12. The dielectric layer, ZnO is 30~45wt%, B ₂ O ₃ is 40 to 55
wt%, SiO ₂ is 110 wt.%, the Al ₂ O ₃ 110 wt.
% And CaO in a composition of 1 to 5 wt%, and the product of the dielectric constant ε and the loss coefficient tan δ may be 0.12 or less.

The dielectric layer contains ZnO of 40 to 60 wt%,
B ₂ O ₃ is 35~45wt%, SiO ₂ is 110 wt.%, Al ₂
O ₃ is a glass composition of 110 wt.%, May be the dielectric constant ε and the product of the loss coefficient tanδ is assumed to be 0.12 or less of the value. The dielectric layer is made of ZnO of 30 to
60wt%, B ₂ O ₃ is 30 to 50 wt%, SiO ₂ is 1~10wt
%, Al ₂ O ₃ is composed of glass having a composition of 1 to 10 wt%,
The product of the dielectric constant ε and the loss coefficient tan δ may be a value of 0.12 or less.

The dielectric layer is composed of 9-20 wt% Nb ₂ O ₅ .
%, ZnO is 35~60wt%, B ₂ O ₃ is 25~40wt%, S
It is also possible that iO ₂ is made of glass having a composition of ₁ to 10 wt%, and the product of its dielectric constant ε and its loss coefficient tan δ is a value of 0.12 or less. Further, according to the present invention, a discharge gas is sealed between a first plate and a second plate provided to face each other, and a plurality of pairs of Ag or Cu are displayed on a surface of the first plate facing the second plate. Electrodes are formed, on the surface of the first plate, as a plasma display panel having a configuration in which a dielectric layer is coated so as to cover the plurality of pairs of display electrodes, the dielectric layer,
A first dielectric formed of a thin film of any one of SiO ₂ , Al ₂ O ₃ , and ZnO, or glass having a composition containing any of PbO and Bi ₂ O ₃ , and formed to cover the plurality of pairs of display electrodes; It can also be composed of a layer and a second dielectric layer made of glass having a composition in which the product of the dielectric constant ε and the loss coefficient tan δ is 0.12 or less, and coated on the first dielectric layer.

Thus, in the first dielectric layer, the deposition of colloid particles derived from a plurality of pairs of display electrodes is effectively suppressed, the transparency of the dielectric layer is maintained, and the display performance of the plasma display panel is improved. be able to. On the other hand, the power consumption of the plasma display panel can be effectively reduced by reducing the dielectric constant ε in the second dielectric layer.

Further, the total thickness of the first dielectric layer and the second dielectric layer is set to 40 μm or less, and the thickness of the first dielectric layer is set to half or less of the total thickness. The total amount of Pb used can be reduced as compared with the conventional case, and an effect of avoiding problems such as environmental pollution caused by Pb can be obtained. Where the above
The value of 40 μm indicates the maximum value of the thickness of a general dielectric layer.

[0025]

DESCRIPTION OF THE PREFERRED EMBODIMENTS 1. Embodiment 1 1-1. Overall Configuration of PDP FIG. 1 is an AC surface discharge type plasma display panel (hereinafter simply referred to as “PDP”) according to Embodiment 1 of the present invention. 1 is a partial cross-sectional perspective view showing a main configuration of FIG. In the figure, the z direction corresponds to the thickness direction of the PDP, and the xy plane corresponds to a plane parallel to the panel surface of the PDP. As an example, the PDP has a size setting conforming to the VGA specification of the 42-inch class, but the present invention may of course be applied to other sizes.

As shown in FIG. 1, the structure of the present PDP is roughly divided into a front panel 20 and a back panel 26 arranged with their main surfaces facing each other. The front panel glass 21 serving as a substrate of the front panel 20 has a thickness of 0.
1 μm, 370 μm wide strip-shaped transparent electrodes 220 and 230, and thickness 5
A plurality of pairs of display electrodes 22 and 23 (X electrodes 23 and Y electrodes 22) composed of bus lines 221 and 231 having a width of 100 μm and a width of 100 μm are arranged in the x direction with the y direction as the longitudinal direction. Two
The surface discharge is performed in the gap (about 80 μm) between 2 and 23. The bus lines 221 and 231 are formed of Ag or Cr / Cu / Cr having excellent conductivity.

The plurality of pairs of display electrodes 22 and 23 are made of Ag.
Alternatively, it may be constituted only by bus lines made of Cu or Cu. In this case, the gap between the plurality of pairs of display electrodes is desirably about 80 μm. The front panel glass 21 on which the display electrodes 22 and 23 are disposed has a thickness of about
A 30 μm dielectric layer 24 (detailed composition will be described later) and a protective layer 25 made of magnesium oxide (MgO) having a thickness of about 1.0 μm are sequentially coated.

On a back panel glass 27 serving as a substrate of the back panel 26, a plurality of address electrodes 28 each having a thickness of 5 μm and a width of 100 μm are arranged at regular intervals (about 150 μm) in the y direction with the x direction as the longitudinal direction. A dielectric film 29 having a thickness of 30 μm is coated over the entire surface of the back panel glass 27 so as to include the address electrodes 28 in a stripe shape. On the dielectric film 29, a plurality of adjacent address electrodes 28
Approximately 150μm high and about 40μm wide partition 30
Are disposed, and on the side surfaces of the adjacent partition walls 30 and the surface of the dielectric film 29 between them, the phosphor layers 31 to 3 corresponding to any of red (R), green (G), and blue (B) are provided. 33 are formed. These RGB phosphor layers 31 to 33 are sequentially and repeatedly arranged in the x direction.

The front panel 20 having such a configuration
The back panel 26 is bonded and sealed at the outer peripheral edge of each of the panels 20, 26 while the plurality of address electrodes 28 and the plurality of pairs of display electrodes 22, 23 are opposed to each other so that the longitudinal directions thereof are orthogonal to each other. Has been stopped. He, between the two panels 20, 26,
A discharge gas (encapsulated gas) composed of a rare gas component such as Xe, Ne, etc. is at a predetermined pressure (conventionally, usually about 500 to 760 Torr).
Enclosed.

A discharge space 38 is formed between two adjacent partition walls 30, and a region where a pair of adjacent display electrodes 22, 23 and one address electrode 28 intersect with the discharge space 38 interposed therebetween is a cell for image display. (Not shown). The cell pitch in the x direction is about 1080 μm, and the cell pitch in the y direction is about 360 μm. When the PDP is driven, the address electrodes 28 and the display electrodes 22 and 23 are driven by a panel driving unit (not shown).
(In the first embodiment, this is referred to as an X electrode 23. In general, the X electrode 23 is a scan electrode, a Y electrode
22 is referred to as a sustain electrode). A pulse is applied to each cell to cause a discharge (address discharge), and then a pulse is applied between the pair of display electrodes 22 and 23 to discharge. UV light of short wavelength (wavelength
A resonance line having a center wavelength of 147 nm) is generated, and the phosphor layers 31 to 33 emit light to display an image.

The main feature of the present PDP lies in the composition of the dielectric layer 24. That the composition of the dielectric layer 24, PbO and Bi ₂ O ₃ and ZnO-P ₂ O ₅ based glass (hereinafter referred to as "ZnO-P ₂ O ₅ based glass of the present invention") that does not include that composed of Features. The ZnO-
The composition of the P ₂ O ₅ glass is, for example, 10 wt% of P ₂ O _5.
%, ZnO 20 wt%, B ₂ O ₃ 40 wt%, SiO ₂ 1
2 wt%, BaO is 3 wt%, and Na ₂ O is 10 wt%. The ZnO-P ₂ O ₅ -based glass of the present invention has a relatively low dielectric constant ε (specifically, PbO-based glass) compared to PbO-based glass or Bi ₂ O ₃ -based glass conventionally used for the dielectric layer. Dielectric constant ε of Zn-based or ZnO-based glass
The dielectric constant ε is about 7 or less while it is about 10-12)
It is suppressed. Also, the product ε · ta of the dielectric constant and the loss coefficient
For nδ, while the conventional value was 0.14 to 0.7,
The value of εtan δ of the dielectric layer 24 of the first embodiment is about 0.1
It has been greatly reduced to a value of 03 or less.

1-2. Effect of Configuration of Dielectric Layer of First Embodiment Here, FIG. 3 is a partial cross-sectional view of a PDP specifically showing a configuration around a conventional dielectric layer. As shown in this figure, in the conventional dielectric layer, ions of Ag and Cu components constituting the bus line are mixed as colloid particles in the dielectric layer,
There was a problem that the colloidal particles reflected visible light and the dielectric layer was colored yellow (that is, yellowed) (see latest plasma display panel, 1997, pp. 234). The problem of yellowing due to such colloidal particles is
R ₂ O (R is Li, Na, K, R
The more the amount of b, Cs, Cu and Ag is selected (for example, more than 10 wt%), the more remarkable. In contrast, in the dielectric layer 24 made of ZnO-P ₂ O ₅ based glass of the present invention, the R ₂ O component for length increasing the generation of colloidal particles (Na ₂ O in this case) are kept below 10 wt% Ag is difficult to generate colloidal particles.
Even if Cu or Cu is used as the material of the bus line, the transparency of the dielectric layer 24 is improved as compared with the related art. As a result, problems such as the loss of color and the loss of light amount caused by the fluorescent light generated in the discharge space 38 are avoided, and the PDP exhibits excellent display performance.

According to the present PDP having such a dielectric layer 24, at the beginning of the discharge sustaining period at the time of driving the PDP,
When a pulse is applied to each pair of display electrodes 22 and 23, discharge is generated in the gap between the pair of display electrodes 22 and 23. Here, in the first embodiment, the dielectric constant ε of the dielectric layer 24 is lower than the conventional value (ε = 10 to 15) (for example, ε
= 6.4), the amount of charge accumulated in the dielectric layer 24 before the start of discharge is reduced, so that discharge is started with a small current. As a result, the present PDP can start discharging with less power than before, and can be driven with good power saving performance thereafter.

As described above, the PDP according to the first embodiment can be obtained by combining good display performance with excellent power saving, and a significant improvement in luminous efficiency is expected as compared with the conventional PDP. You can do it. 1-3. Detailed description of the relationship between the dielectric constant ε of the dielectric layer and the power consumption of the PDP In general, the area of the pair of display electrodes 22 and 23 is represented by S, and the capacitance between the pair of display electrodes 22 and 23 ( When the capacitance of the dielectric layer existing in the path including the discharge space 38) is C, the thickness of the dielectric layer 24 is d, and the dielectric constant of the dielectric layer 24 is ε, these relations are expressed by the following equation (1). It can be represented by an equation. (Equation 1) C = εS / d Further, the voltage applied between the pair of display electrodes 22 and 23 is V,
Assuming that the driving frequency of the panel is f and the power consumption of the PDP at this time is W, W can be approximately expressed by the following equation (2). (Formula 2) W = fCV ² = f (εS / d) V ² As is clear from the above formulas 1 and ² , if f and V ² are constant, the smaller the capacitance C, the more the capacitance is consumed. The power W decreases. Since the capacitance C is proportional to the dielectric constant ε, the dielectric constant ε
The power consumption W also decreases as the value of becomes smaller (for details, see IEEJ Transactions A, Vol. 118, No. 15, 1998, pp. 537-542).

It is known that the power loss w of the PDP is expressed by the following equation (3) using the relational expression of electric field strength E = V / d (Electronic Materials, Denki Shoin, Showa) See March 10, 1950, pp. 23). (Equation 3) w∝f (ε · tanδ) V ^{2 Since} power loss w is generally proportional to power consumption W,
It can be seen from Equation 3 that when at least one of the dielectric constant ε or tan δ becomes smaller, the power consumption W also becomes smaller (for details, see IEEJ Transactions on Materials, Vol. 118, No. 15, Heisei 1
0 years pp. 537-542).

The effect of the PDP of the first embodiment can be explained by this theory. That is, the composition of the dielectric layer is changed to the ZnO—P ₂ O ₅ -based glass (PbO or Bi ₂ O) of the present invention.
Does not contain the components of the _{3, P 2 O 5, ZnO} , B 2 O 3, Si
O ₂ , BaO, a composition containing each component such as Na ₂ O), thereby lowering both the value of the product ε · tanδ of the dielectric constant and the loss coefficient from the conventional one (specifically, a value of 0.12 or less), The power consumption w of the PDP is reduced by reducing the power loss w.

The dielectric layer 24 of the first embodiment is made of a ZnO-based glass containing no PbO or Bi ₂ O ₃ (hereinafter, referred to as “ZnO-based glass of the present invention”). This is evident in the examples below.
In this case, the composition of the ZnO-based glass of the present invention is, for example, 40 wt% of ZnO, 45 wt% of B ₂ O ₃ , and 5 wt% of SiO _2.
t%, Al ₂ O ₃ is 5 wt%, and Cs ₂ O is 5 wt%. Further, Nb ₂ O ₅ —ZnO-based glass containing no PbO or Bi ₂ O ₃ (hereinafter referred to as “Nb ₂ O
₅ -ZnO-based glass "). In this case, the composition of the Nb ₂ O ₅ —ZnO-based glass of the present invention is, for example, 19 wt% of Nb ₂ O _{5 and} 44 wt% of ZnO.
%, B ₂ O ₃ is 30 wt%, and SiO ₂ is 7 wt%.

Variations in the glass composition of the dielectric layer 24 of the present invention will be described in detail in the following examples. 2. Second Embodiment Next, a PDP according to a second embodiment will be described. The configuration of the second embodiment is almost the same as that of the first embodiment except for the dielectric layer.

2-1. Configuration around Dielectric Layer FIG. 2 is a partial sectional view of a PDP specifically showing the configuration around the dielectric layer 24 according to the second embodiment. As is clear from the figure, the dielectric layer 24 of the second embodiment has a two-layer structure in which the first dielectric layer 241 and the second dielectric layer 242 are laminated.
The first dielectric layer 241 is made of a 5 μm thick PbO-based glass (here, for example, 65 wt% of PbO, 10 wt% of B ₂ O ₃ ,
24 wt% of SiO ₂ , 1 wt% of CaO, ₂ w of Al ₂ O ₃
t%) is formed on the main surface of the front panel glass 21 so as to cover the display electrodes 22 and 23.

The second dielectric layer 242 has a thickness of 25 μm
P ₂ O ₅ glass (here, for example, ZnO is 30 wt.
%, P ₂ O ₅ is 20 wt%, B ₂ O ₃ is 40 wt%, and SiO ₂ is 1 wt%.
0 wt%). The dielectric constant ε of the second dielectric layer 242 is about 6.3. 2-2. Effect of Dielectric Layer of Second Embodiment PbO-based glass used for first dielectric layer 241 has a dielectric constant of ε.
Is about the same as before (for example, 11.0),
Ag and Cu colloid particles derived from the bus lines 221 and 231 are less likely to be generated.

In the second embodiment, by stacking the first dielectric layer 241 and the second dielectric layer 242 having such properties, the first dielectric layer 241 made of PbO-based glass is used for the display electrodes 22 and 23 is coated with a second dielectric layer 242 having a relatively low dielectric constant ε while suppressing the generation of colloid particles.
It also has the function of reducing the power consumption of the DP. As a measure to reduce the power consumption of the PDP, the total dielectric constant ε of the dielectric layer 24 is set low by further reducing the thickness of the first dielectric layer 241 to 5 μm. Some efforts have been made to reduce the amount of charge stored. In addition, by reducing the thickness of the first dielectric layer 241 in this manner, the amount of Pb used can be reduced,
It is also possible to respond to problems such as environmental pollution.

Incidentally, the thickness of a general dielectric layer is 40 at the maximum.
μm, in order to obtain the effect of the dielectric layer 24 of the present invention (for example, the above-described effect of reducing the amount of Pb) favorably,
It is necessary that the thickness be 40 μm or less. In this case, by setting the thickness of the first dielectric layer 241 to be equal to or less than half the total thickness of the dielectric layer 24, the amount of Pb can be further effectively reduced.

According to the present PDP having the dielectric layer 24, when a pulse is applied to each pair of the display electrodes 22 and 23 at the beginning of the discharge sustaining period at the time of driving the PDP, the first dielectric glass 24
Discharge occurs in the gap between the display electrodes 22 and 23 in 1. Then, the plasma of the discharge gas expands into the discharge space 38 via the second dielectric layer 242, and the discharge shifts to the sustain discharge, so that the emission luminance gradually improves.

Here, in the second embodiment, since the dielectric constant ε of the second dielectric layer 242 is lower than the conventional one, the amount of charge stored in the dielectric layer required for discharge is the same as in the first embodiment. And the present PDP is driven with good power saving. Furthermore, since the first dielectric layer 241 made of PbO-based glass covers the bus lines 221 and 231, the generation of colloid particles made of Ag and Cu components in the bus lines 221 and 231 is performed according to the first embodiment. As a result, the yellowing of the dielectric layer 24 is suppressed, and the transparency is increased. Therefore, the fluorescent light generated in the discharge space 38 is favorably provided for the light emitting display of the PDP without deteriorating the color.

The first dielectric layer 241 may be made of Bi ₂ O ₃ glass in addition to the PbO glass,
It may be formed as a thin film oxide layer of iO ₂ , Al ₂ O ₃ , ZnO or the like. These thin film oxide layers can be formed by sputtering. As the second dielectric layer 242, it may be used ZnO-based glass in addition to the ZnO-P ₂ O ₅ based glass. These specific glass compositions will be described in detail in Examples.

Here, a technique for forming the dielectric layer in a two-layer structure is disclosed in, for example, Japanese Patent Application Laid-Open No. 9-50769, in which the first dielectric layer is made of ZnO-based glass, Each of the body layers is made of PbO-based glass (that is, a dielectric layer having a laminated structure opposite to that of the second embodiment).
Which is clearly different from the configuration of the present invention. Further, in this configuration, the colloid particles derived from the bus line are more easily generated in the first dielectric layer than in the present invention,
May cause yellowing. Further, Z in the art
The nO-based glass has a composition containing Bi ₂ O ₃ , and in this composition, the dielectric constant ε of the dielectric layer is expected to be considerably higher than that of the dielectric layer of the present invention. For this reason, JP-A-9-5076
It seems that it is difficult to obtain the excellent power saving effect and the effect of suppressing the yellowing of the dielectric layer in the present invention by the technique disclosed in Japanese Patent Application Laid-Open No. 9-209,897.

3. Method of Manufacturing PDP Next, an example of a method of manufacturing the PDP of each of the above embodiments will be described. 3-1. Fabrication of front panel Approximately 2.6mm thick by the float method of floating and molding a glass material on a molten Sn (tin) float at about 360 ° C
Front panel glass 21 made of soda lime glass
Are formed, and display electrodes 22 and 23 are formed on the surface. First, the transparent electrodes 220 and 230 are formed by the following photoetching method.

Next, on the entire surface of the front panel glass 21,
A photoresist (for example, an ultraviolet curable resin) is applied to a thickness of about 0.5 μm. Then, a photomask having a pattern of the transparent electrodes 220 and 230 is superimposed thereon and irradiated with ultraviolet rays, soaked in a developing solution to wash out uncured resin. Next, the transparent electrodes 220 and 230
Is applied to the gap of the resist on the front panel glass 21 as a material for the substrate. Thereafter, the resist is removed with a cleaning solution or the like, and the transparent electrodes 220 and 230 are completed.

Subsequently, bus lines 221 and 231 having a thickness of about 7 μm and a width of 50 μm are formed on the transparent electrodes 220 and 230 by using a metal material containing Ag or Cr / Cu / Cr as a main component. When Ag is used, a screen printing method can be applied. When Cr / Cu / Cr is used, a vapor deposition method or a sputtering method can be applied. Thus, the display electrodes 22 and 23 are formed.

3-1-1. Fabrication of Dielectric Layer of Embodiment 1 (Dielectric Layer Having Single Layer Structure) Here, the dielectric layer of Embodiment 1 (using a P ₂ O ₅ —ZnO-based glass) A method for manufacturing the device will be described. First, P ₂ O ₅ -Zn
O-based glass powder (for example, P2O5 _{10 to 25} wt%, ZnO20
_{~35wt%, B 2 O 3 30~55wt} %, SiO 2 5~12wt
% And a composition containing BaO and Na ₂ O as an upper limit of 10 wt%), an organic binder solution (0.2 wt% of a dispersant homogenol and 2.5 wt% of a plasticizer dibutyl phthalate).
%, And 45% by weight of an organic solvent containing 10% by weight of ethylcellulose) are mixed at a weight ratio of 55:45 to form a glass paste. This glass paste is applied to the front panel glass 21 from above the display electrodes 22 and 23 by a printing method.
Coat over the entire surface. Then, firing is performed at 600 ° C. or lower (specifically, at 520 ° C. for 10 minutes) to form the dielectric layer 24 having a thickness of 30 μm. As described above, by determining the composition of the P ₂ O ₅ —ZnO-based glass of the present invention, it becomes possible to perform firing at a relatively low temperature for a glass material of 600 ° C. or less, It has been found that the manufacturing process can be facilitated. The dispersant can be selected from homogenol, sorbitan sesquiolate, and polyoxyethylene monooleate.

Here, conventionally, when this dielectric layer is formed, Ag or Cu of each bus line has a diameter of 30 in the dielectric layer.
There was a problem of precipitation as colloidal particles of 0 to 400 ° (see FIG. 3 described above). This is mainly because tin ions Sn ²⁺ remain attached to the surface of the front panel glass when the float method is performed, and reduce Ag ⁺ and Cu ²⁺ that have later dissolved out of each bus line into the dielectric layer ( For example 2
(Ag ⁺ + Sn ²⁺ → Ag + Sn ⁴⁺ ). At this time, the composition of the dielectric layer includes an R ₂ O component (R is Li, Na, K, Rb, C
s, Cu, Ag) selected from the group consisting of 10 wt.
%, The reduction reaction is increased. Such a reduction reaction is particularly effective when the R ₂ O component is 10
It has been found by the present inventors that the effect is remarkable when the content is more than wt%, but this is accompanied by R 2 O having a relatively small ionic radius, and the Ag ⁺ or Cu 2 ⁺ It is presumed to be caused by the more spread inside.

In the present invention, the reduction reaction is suppressed and the generation of colloid particles is suppressed by setting the ratio of the R ₂ O component (in this case, Na ₂ O) in the composition of the dielectric layer 24 to 10 wt% or less. This prevents the dielectric layer 24 having good transparency from being formed. 3-1-2. Dielectric Layer of Second Embodiment (Dielectric Layer with Double Layer Structure)
Here, the dielectric layer of Embodiment 2 (Pb is used as the first dielectric layer)
The method for producing O-based glass and P ₂ O ₅ -ZnO-based glass for the second dielectric layer will be described.

First, a PbO-based glass powder (here, as an example, 65 wt% of PbO, 10 wt% of B ₂ O ₃ , SiO ₂
And 24 wt% of CaO, 1 wt% of CaO and ₂ wt% of Al ₂ O ₃ ) and an organic binder solution (0.2 wt% of homogenol as a dispersant and 2.5 wt% of dibutyl phthalate as a plasticizer)
%, And 45% by weight of an organic solvent containing 10% by weight of ethylcellulose) are mixed at a weight ratio of 55:45 to form a glass paste. This glass paste is applied to the front panel glass 21 from above the display electrodes 22 and 23 by a printing method.
Coat over the entire surface. Then, firing is performed (specifically, at 560 ° C. for 10 minutes) to obtain a first dielectric layer 24 having a thickness of 5 μm.
Form one.

The first dielectric layer 241 is made of SiO ₂ , Al
_It may be formed by sputtering an oxide thin film such as ₂ O ₃ or ZnO. Here, as the glass material of the first dielectric layer 241, of course, care should be taken to use a glass material higher than the melting point of the second dielectric layer 242 formed later. Next, a P ₂ O ₅ —ZnO-based glass powder (here, for example, 30 wt% of ZnO, 20 wt% of P ₂ O ₅ , and 40 wt% of B ₂ O ₃₎ is formed on the first dielectric layer 241 formed above.
%, SiO ₂ at 10 wt%) and an organic binder solution (0.2 wt% of dispersant homogenol, 2.5 wt% of plasticizer dibutyl phthalate, and 45 wt% of an organic solvent containing 10 wt% of ethyl cellulose) Are mixed at a weight ratio of 55:45 to form a glass paste. This glass paste is coated over the entire surface of the front panel glass 21 from above the display electrodes 22 and 23 by a printing method. Then, firing is performed (specifically, at 530 ° C. for 10 minutes) to form a second dielectric layer 242 having a thickness of 25 μm.

Thus, a dielectric layer 24 having a two-layer structure is formed. After the dielectric layer 24 is formed as described above, a protective layer 25 made of magnesium oxide (MgO) is formed on the surface thereof.
Is formed over a thickness of about 0.9 μm. Thus, the front panel 20 is manufactured. 3-2. Manufacture of back panel On a surface of a back panel glass 27 made of soda lime glass having a thickness of about 2.6 mm manufactured by the float method, a conductive material mainly composed of Ag is screen-printed at regular intervals. To form a plurality of address electrodes 28 having a thickness of about 5 μm.

Subsequently, the same glass paste as that of the dielectric layer 24 is applied with a thickness of about 20 μm and baked over the entire surface of the back panel glass 27 on which the plurality of address electrodes 28 are formed, and baked. To form Next, the dielectric film 29
2 adjacent to the dielectric film 29 using the same glass material as
The height of each address electrode 28 (about 150 μm) is about 150
The partition wall 30 of μm is formed one by one. This multiple partitions 30
Can be formed, for example, by repeatedly screen-printing a glass paste containing the above-mentioned glass material and then firing.

After the formation of the partition 30, the wall surface of the partition 30 and the surface of the dielectric film 29 exposed between the two adjacent partitions 30 are
A fluorescent ink containing any of a red (R) phosphor, a green (G) phosphor, and a blue (B) phosphor is applied and dried.
After firing, the phosphor layers 31 to 33 are formed. Here, examples of phosphor materials generally used for PDPs are listed below.

Red phosphor; (Y _x Gd _1-x ) BO ₃ : Eu ³⁺ green phosphor; Zn ₂ SiO ₄ : Mn blue phosphor; BaMgAl ₁₀ O ₁₇ : Eu ³⁺ (or B
aMgAl ₁₄ O ₂₃ : Eu ³⁺ ) As each phosphor material, for example, a powder having an average particle size of about 3 μm can be used. There are several methods for applying the phosphor ink. Here, a method of scanning the phosphor ink and discharging it from the nozzles is used. This method is advantageous for uniformly applying the phosphor ink to a target area. The method for applying the phosphor ink of the present invention is not limited to this method, and other methods such as a screen printing method can be used.

Thus, the back panel 26 is completed. The front panel glass 21 and the back panel glass
Although the example in which 27 is made of soda-lime glass is shown, this is an example of a material, and other materials may be used as a matter of course. 3-3. Completion of PDP The produced front panel 20 and back panel 26 are bonded together using sealing glass. Thereafter, the inside of the discharge space 38 is evacuated to a high vacuum (8 × 10 ⁻⁷ Torr), and a Ne—Xe or He—Xe system is applied thereto at a predetermined pressure (500 to 760 Torr).
A discharge gas such as a Ne-Xe-based or He-Ne-Xe-Ar-based gas is sealed.

Thus, the PDP is completed. 4. Production of Example and Performance Measurement 4-1. Production of Example and Comparative Example Subsequently, in order to evaluate the performance of the PDP of the present invention, the PDP of the example was produced according to the production method described above. P of the embodiment
DP has a plurality of variations (ZnO-based glass, P ₂ O ₅ -based glass or ZnO-
P ₂ O ₅ based glass) total 60 kinds (Nanba1～60) was prepared. Among the examples Nos. 1 to 60, the PD according to the first embodiment
Examples corresponding to P (PDP having a single-layer dielectric layer) are Nos. 1 to 54, and Examples corresponding to the PDP of the second embodiment (PDP having a double-layer dielectric layer) are No. .Five
5 to 60. Here, Nos. 4, 20, 29, 43, 47, and 51 were produced as examples containing no R ₂ O component.

As a comparative example, a conventional glass composition (B
i ₂ O ₃ glass or PbO glass (detailed composition
PDPs with a dielectric layer consisting of
Fifteen types (Nos. 61 to 75) were produced. Of these, in ZnO-based glass, P ₂ O ₅ -based glass or ZnO-P ₂ O ₅ -based glass, R ₂ O (for example, Na ₂ O)
A total of three types of PDPs (Nos. 65 to 67) of Comparative Examples provided with a dielectric layer formed by adding more than wt% were produced.

The total thickness of the dielectric layers of the PDPs Nos. 1 to 75 was set to 30 μm. All the dielectric layers were formed by a printing method except that the first dielectric layers of PDPs No. 58 to 60 were formed by a sputtering method. No. 1 of the PDP thus manufactured
About to 75, the coloring state of the dielectric layer, the loss coefficient (tan)
δ), withstand voltage (DC), ε · tanδ product value, dielectric constant ε,
The panel luminance (cd / m ² ) of the PDP, the power consumption (W) of the PDP, and the like were measured. Specific measuring methods are as follows. In addition, the coloring state of the dielectric layer was visually confirmed by setting the PDP to a white balance display state.

4-2. Measurement of Loss Coefficient (tan δ) and Dielectric Constant ε of Dielectric Layer The withstand voltage and the loss coefficient of the dielectric layer of each PDP were measured using an LCR meter (4284A, manufactured by Hewlett-Packard Company). (Frequency of 10 kHz) was applied, and each was measured.
The specific measuring method at this time is as follows. That is, five adjacent X electrodes on the front panel are connected to form a common electrode. Next, a rectangular Ag electrode having a size of 4 mm × 4 mm is formed on the dielectric layer, applied to these electrodes, and the capacitance C and the loss coefficient tan δ therebetween are measured. The values of C and tan δ are displayed directly on the LCR meter. The dielectric constant ε is calculated using the above equation (d = 3
0 μm, S = 4 mm × 4 mm).

4-3. Measurement of Withstand Voltage of Dielectric Layer The withstand voltage of the dielectric layer was determined in each of Examples and Comparative Examples N.
o. Dielectric layers similar to those formed on PDPs 1 to 75 were formed on a glass substrate, and measurement was performed on these dielectric layers.
Specifically, each dielectric layer prepared on the glass substrate was
The measurement was carried out by sandwiching between two rectangular Ag electrodes having a size of 4 mm × 4 mm from above and below, and applying a DC voltage between the two electrodes.

The data of Examples Nos. 1 to 60 and Comparative Examples Nos. 61 to 75 thus obtained are shown in Tables 1 to 25.

[0066]

【table 1】

[0067]

[Table 2]

[0068]

[Table 3]

[0069]

[Table 4]

[0070]

[Table 5]

[0071]

[Table 6]

[0072]

[Table 7]

[0073]

[Table 8]

[0074]

[Table 9]

[0075]

[Table 10]

[0076]

[Table 11]

[0077]

[Table 12]

[0078]

[Table 13]

[0079]

[Table 14]

[0080]

[Table 15]

[0081]

[Table 16]

[0082]

[Table 17]

[0083]

[Table 18]

[0084]

[Table 19]

[0085]

[Table 20]

[0086]

[Table 21]

[0087]

[Table 22]

[0088]

[Table 23]

[0089]

[Table 24]

[0090]

[Table 25]

5. Performance Evaluation of Example 5-1. Dielectric Constant ε First, as shown in Table 1, the ZnO—P ₂ O ₅ based glass (N
o.1 to 8), it was confirmed that a good value of the dielectric constant ε (ε = 6.2 to 6.7) was obtained to obtain power saving. The P ₂ O ₅ —ZnO-based glasses of Examples 1 to 8 are a variation group directly based on the glass composition of the dielectric layer described in the first embodiment. According to these embodiments Nanba3,5～8, specific composition range of effects ZnO-P ₂ O ₅ based glass obtained according to the present invention, P ₂ O ₅ is 10 to 25 wt%, is ZnO
20~35wt%, B ₂ O ₃ is 30~55wt%, SiO ₂ is 5 to 12
%, and a ratio in which DO and R ₂ O are contained in an upper limit of 10 wt%. Where R is Li, Na, K,
One selected from among Rb, Cs, Cu, and Ag;
D is selected from among Mg, Ca, Ba, Sr, Co, Cr, and Ni. In addition, Cu of R and C of D
It has been confirmed by another experiment that r can be used as DO or R ₂ O.

For No. 4 containing no R ₂ O component, P ₂ was determined based on the glass composition of the dielectric layer in Table 1.
O ₅ is 20 to 30 wt%, ZnO is 30 to 40 wt%, and B ₂ O ₃ is 3
It is presumed that similar performance can be obtained even if the glass composition is slightly changed in the range of 0 to 45 wt% and SiO _{2 in} the range of ₁ to 10 wt%. Next, even with the composition of the ZnO—P ₂ O ₅ -based glass (Nos. 9 to 14) of the examples shown in Table 2, the value of the dielectric constant ε was reduced to 6.0 or less (ε = 5.8 to 6.5), It was found that good results were obtained. According to these embodiments Nanba9～14, the glass composition range, P ₂ O ₅ is 42~50wt%, Z
nO is 35~50wt%, Al ₂ O ₃ is 7~14wt%, Na ₂ O
Is desirably contained at an upper limit of 5 wt%.

Further, even with the compositions of the ZnO-based glasses (Nos. 15 to 22) of the examples shown in Table 3, the value of the dielectric constant ε was suppressed to 6.0 units (ε = 6.4 to 6.8), and good results were obtained. It turned out to be obtained. According to these Examples Nos. 15 to 22, the glass composition range is such that ZnO is 20 to 44 wt%, B
₂ O ₃ is contained at 38 to 55 wt%, SiO ₂ is contained at 5 to 12 wt%,
Further, it is desirable that R ₂ O and MO each contain 10 wt% as an upper limit. Where R is Li, Na,
M is selected from among K, Rb, Cs, Cu, and Ag, and M is selected from among Mg, Ca, Ba, Sr, Co, and Cr. Here, Co and Cr of M are not described in the table, but it has been confirmed by another experiment that they can be used as the MO.

[0094] For No. 20 containing no R ₂ O component, Z was determined based on the glass composition of the dielectric layer in Table 3 as a reference.
nO is 30~45wt%, B ₂ O ₃ is 40~60wt%, SiO ₂
It is presumed that the same performance can be obtained even if it is slightly changed in the range of 1 to 15 wt% of the glass composition. Table 4
It was also found that even with the composition of the ZnO-based glass (Nos. 23 to 30) of Example shown in FIG. 7, the value of the dielectric constant ε was suppressed to 6.0 units (ε = 6.3 to 6.4), and good results were obtained. According to these Examples Nos. 23 to 30, the glass composition ranges are ZnO of 20 to 43 wt%, B ₂ O ₃ of 38 to 55 wt%, and S
iO ₂ is 5~12wt%, Al ₂ O ₃ is contained in 1-10%, further, that R ₂ O and MO are contained a 10 wt% as an upper limit, respectively preferred. Where R is Li, Na,
M is selected from among K, Rb, Cs, Cu, and Ag, and M is selected from among Mg, Ca, Ba, Sr, Co, and Cr. Here, although the Co of M is not described in the table, the MO was determined by another experiment.
It has been confirmed that it can be used as.

For No. 29 containing no R ₂ O component, the Z composition was determined based on the glass composition of the dielectric layer in Table 4.
nO is 30~45wt%, B ₂ O ₃ is 40~55wt%, SiO ₂
There 1~10wt%, Al ₂ O ₃ is 110 wt.%, CaO 1 to 5
It is presumed that the same performance can be obtained even if it is slightly changed in the range of the glass composition of wt%. Furthermore, even with the composition of the ZnO-based glass (Nos. 31 to 38) of the examples shown in Table 5, the value of the dielectric constant ε was suppressed to 6.0 units (ε = 6.4 to 6.7),
It was found that good results were obtained. According to these Examples Nos. 31 to 38, the glass composition range is ZnO
There 1~15wt%, B ₂ O ₃ is 20 to 40 wt%, SiO ₂ is 10 to
30wt%, Al ₂ O ₃ is 5~25wt%, Li ₂ O is 3~10w
It is desirable that the composition be t% and MO be 2 to 15 wt%. Here, M is selected from among Mg, Ca, Ba, Sr, Co, and Cr. Here, Co and Cr of M are not described in the table, but it has been confirmed by another experiment that they can be used as the MO.

Further, even with the compositions of the ZnO-based glasses (Nos. 39 to 44) of the examples shown in Table 6, the value of the dielectric constant ε was suppressed to 6.0 units (ε = 6.3 to 6.8), and good results were obtained. It turned out to be obtained. According to these Examples Nos. 39 to 44, the glass composition range is such that ZnO is 35 to 60 wt%,
₂ O ₃ 25-45 wt%, SiO ₂ 1-10.5 wt%, Al ₂
It is desirable that the composition contain O _{3 at 1} to 10 wt% and further contain Na ₂ O at an upper limit of 5 wt%.

For No. 43 containing no R ₂ O (here, Na ₂ O) component, ZnO was 40 to 60 wt% and B ₂ O ₃ was based on the glass composition of the dielectric layer in Table 6. Is 35 ~
45 wt%, SiO ₂ is 110 wt.%, The Al ₂ O ₃ 1~10w
It is presumed that the same performance can be obtained even if it is slightly changed in the range of the glass composition of t%. Furthermore, even with the composition of the ZnO-based glass (Nos. 45 to 50) of the examples shown in Table 7, the value of the dielectric constant ε was suppressed to 6.0 units (ε = 6.4 to 6.5), and good results were obtained. I understood. These Examples N
According to o.45-50, the glass composition range is as follows.
5~60wt%, B ₂ O ₃ is 25~45wt%, SiO ₂ is 1 to 12
wt%, Al ₂ O ₃ in a content of ₁ to 10 wt%, and K ₂ O
Is desirably a composition containing 5 wt% as an upper limit.

For No. 47 containing no R ₂ O (here, K ₂ O) component, ZnO was 30 to 60 wt% and B ₂ O ₃ was based on the glass composition of the dielectric layer in Table 7. Is 30-50
wt%, SiO ₂ is 110 wt.%, the Al ₂ O ₃ 110 wt.
It is presumed that the same performance can be obtained even if the glass composition is slightly changed in the range of the glass composition. Then, even in the composition of ZnO-Nb ₂ O ₅ based glass of the embodiment shown in Table 8 (No.51~54),
It was found that the value of the dielectric constant ε was suppressed to the order of 6.0 (ε = 6.5 to 6.8), and good results were obtained. According to these Examples Nos. 51 to 54, the glass composition range is N
b ₂ O ₅ is 9~19wt%, ZnO is 35~60wt%, B ₂ O ₃
Is 20 to 38 wt%, SiO ₁ is 1 to 10.5 wt%, and Li ₂ O is 5
It is desirable that the composition has a composition containing wt% as an upper limit.

For No. 51 containing no R ₂ O (here, Li ₂ O) component, ₉ to 20 wt% of Nb ₂ O ₅ and ZnO were used based on the glass composition of the dielectric layer in Table 8. Is 35
~60wt%, B ₂ O ₃ is 25~40wt%, SiO ₂ is 1~10w
It is presumed that the same performance can be obtained even if it is slightly changed in the range of the glass composition of t%. As described above, Example N
o. Any of 1 to 54 has a value of dielectric constant ε of 6.0 or less, and Comparative Examples Nos. 61 to 6 shown in Tables 11 and 12.
4. The dielectric constant ε (11 to 12 units) of 68 to 75 is reduced to about half (6.0 units). In addition, Comparative Example No. 65
The dielectric constants ε of 6.4 to 6.7 are as low as 6.4 to 6.7, which are as low as those of the examples. However, the performances of these comparative examples Nos. Does not reach the performance of.

Further, in Examples Nos. 55 to 60 corresponding to the structure of the dielectric layer (dielectric layer having a two-layer structure) of the second embodiment, the first dielectric layer is formed of PbO-based glass (No. 55 to No. 55). 57) or an SiO ₂ -based glass (No. 58), an Al ₂ O ₃ -based glass (No. 59), or a ZnO-based glass (No. 60) formed by sputtering, and the ZnO-based glass (No. 60) is used for the second dielectric layer. Nanba55,57～60) or have a configuration using the P ₂ O ₅ -ZnO-based glass (No.56). With these configurations, the overall dielectric constant ε is suppressed to 7 or less, similarly to the above-described Examples Nos. 1 to 54.

5-2. Panel Luminance and Panel Power Consumption From the results shown in Tables 14 to 25, in Examples Nos. 1 to 60, the performance of the panel luminance was almost the same as that of Comparative Examples Nos. 61 to 75 in general. However, it was found that the power consumption was significantly reduced compared to the comparative example (to 450 to 550 W units compared to the 830 to 1000 W units of the comparative example).

On the other hand, ε · tanδ proportional to the power loss w
The value of (see Equation 3) is 0.140 in Comparative Example.
For the range of values of ~ 0.750, the entirety of Examples Nos. 1 to 60, including Examples Nos. 4, 20, 29, 43, 47 and 51 in which R ₂ O is not included in the composition of the dielectric layer. The maximum value has been reduced to 0.12 or less. This shows that the PDPs of the examples have excellent power saving properties and good luminous efficiency can be obtained. Further, when determining the glass composition of the dielectric layer of the present invention, from the overall measurement results of the above Examples 1 to 60,
It seems that one criterion can be to select one having a value of ε · tan δ of 0.12 or less.

Further, it was found that with such a glass composition, the withstand voltage of Examples Nos. 1 to 60 was improved to a maximum of about 1.5 times that of the comparative example, and the durability was also excellent. 5-3. Transparency (Colored State) of Dielectric Layer In all the glass compositions listed in Examples Nos. 1 to 60, as shown in Tables 14 to 22, Comparative Examples No. It was confirmed that good transparency was maintained without yellowing observed as in Nos. 61 to 67 and Nos. 72 to 75. It is considered that the excellent performance in the panel luminance was exhibited by this. In Comparative Examples Nos. 68 to 71, although no yellowing was observed, the dielectric constant ε was 10.5 to 11.0, which is considerably higher than that of the examples, as described above.

As described above, the yellowing of the dielectric layer is mainly caused by the colloidal particles of the Ag or Cu component in the bus line reflecting visible light. The generation of colloid particles is suppressed,
Transparency is maintained. This is obtained as a result of imparting the function of suppressing the above-described reduction reaction of Ag or Cu ions by keeping the R ₂ O component in the composition of the glass layer within 10 wt% or less. In other words, the composition in the dielectric layer of this embodiment contains ZnO (or further contains P ₂ O ₅ ), and R ₂ O contains 10 wt%.
It seems that it is desirable to select a material having a dielectric constant ε of 7 or less including the upper limit of. However, some of the described embodiments do not include this R ₂ O at all (for example, No.
4, 20 etc.) exhibit a good dielectric constant value, so that it is not always an absolute condition that R ₂ O is contained in the dielectric layer.

[0105] Incidentally, as shown in the data of the comparative example Nanba65～67, is added more than 10 wt% of R ₂ O (e.g. Na ₂ O) in the ZnO-based glass or ZnO-P ₂ O ₅ based glass Yellowing was observed (here, Comparative Example No. 67
Is a PDP based on the one disclosed in JP-A-8-77930). These yellowing were observed to a greater extent than in the other comparative examples.

6. Other Matters In the above-described embodiment and examples, examples of manufacturing a VGA type PDP have been described. However, the present invention is not limited to this, and it is needless to say that the present invention is applied to a PDP of another standard. You may. Further, the discharge gas of the PDP is not limited to the Ne-Xe-based discharge gas, and the same effect can be obtained with other discharge gases.

[0107]

As is apparent from the above description, the present invention is characterized in that a discharge gas is sealed between a first plate and a second plate provided opposed to each other, and a first plate opposed to the second plate is provided. A plasma display panel having a configuration in which a plurality of pairs of display electrodes made of Ag or Cu are formed on the surface, and a dielectric layer is coated on the surface of the first plate so as to cover the plurality of pairs of display electrodes. The dielectric layer is composed of at least ZnO and 10 wt% or less of R.
_It is made of glass having a composition containing ₂ O and not containing PbO and Bi ₂ O ₃ , and its dielectric constant ε and its loss coefficient tan
The product of δ is a value of 0.12 or less (however,
R is selected from Li, Na, K, Rb, Cs, Cu, and Ag), so that components such as Ag and Cu of the display electrode are mixed into the dielectric layer to form colloid particles. The display performance of the display is effectively prevented from deteriorating. Also, the dielectric constant ε of the dielectric layer
And the loss factor tan δ are lower than in the prior art, so that a plasma display panel with reduced power consumption can be obtained. Further, the glass composition having the above composition has a softening point of 600 ° C. or lower, which is lower than that of the conventional glass composition, so that the production cost for firing the dielectric layer and the like can be suppressed.

[Brief description of the drawings]

FIG. 1 is a partial sectional perspective view showing a configuration of a PDP according to a first embodiment.

FIG. 2 is a partial cross-sectional view showing a configuration around a dielectric layer of a PDP according to a second embodiment.

FIG. 3 is a partial cross-sectional view showing a configuration around a dielectric layer of a conventional PDP.

[Explanation of symbols]

 21 Front panel glass 22.23 Display electrode 221,231 Bus line 24 Dielectric layer 241 First dielectric layer 242 Second dielectric layer

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Mitsuhiro Otani 1006 Kazuma Kadoma, Osaka Prefecture Inside Matsushita Electric Industrial Co., Ltd. Terms (reference) 5C040 FA01 GD07 KA04 MA02 MA12 MA23 MA24 MA25

Claims (19)

[Claims] A discharge gas is sealed between a first plate and a second plate provided opposite each other, and a plurality of pairs of Ag or Cu are displayed on a surface of the first plate facing the second plate. An electrode is formed, a plasma display panel having a configuration in which a dielectric layer is coated on the surface of the first plate so as to cover the plurality of pairs of display electrodes, wherein the dielectric layer has at least ZnO and , Made of glass having a composition containing not more than 10 wt% of R ₂ O and not containing PbO and Bi ₂ O _3, having a dielectric constant ε and a loss coefficient ta
A plasma display panel, wherein the product of nδ is a value of 0.12 or less. Where R is Li, Na, K, R
b, Cs, Cu, and Ag. 2. The plasma display panel according to claim 1, wherein the dielectric layer has a dielectric constant ε of 7 or less. 3. The dielectric layer according to claim ₂ , wherein P ₂ O ₅ is 10 to 25 wt.
%, ZnO 20-35 wt%, B ₂ O ₃ 30-40 wt%, S
iO ₂ is contained in an amount of ₅ to 12 wt%, and R ₂ O and D
ZnO containing O as an upper limit of 10 wt% each
_{2. The} plasma display panel according to claim 1, wherein the plasma display panel is made of -P ₂ O ₅ -based glass and has a dielectric constant ε of 7 or less. Where D is Mg, Ca, Ba, Sr, C
It shall be selected from among o, Cr, and Ni. 4. The dielectric layer, wherein P ₂ O ₅ is 42 to 50 wt.
%, ZnO is 35 to 50 wt%, Al ₂ O ₃ is 7 to 14 wt%,
ZnO-P ₂ containing Na ₂ O up to 5 wt%
2. The plasma display panel according to claim 1, wherein the plasma display panel is made of an O ₅ -based glass and has a dielectric constant ε of 7 or less. 5. The dielectric layer according to claim 5, wherein ZnO is 20 to 44 wt.
%, B ₂ O ₃ is 38~55wt%, SiO ₂ is contained in 5～12Wt%, further, made of ZnO based glass R ₂ O and MO are contained a 10 wt% as an upper limit, respectively, the dielectric constant 2. The plasma display panel according to claim 1, wherein ε is 7 or less. Where R is Li, N
selected from a, K, Rb, Cs, Cu, Ag, M
Is selected from Mg, Ca, Ba, Sr, Co, and Cr. 6. The dielectric layer contains ZnO of 20 to 43 wt.
%, B ₂ O ₃ is 38~55wt%, SiO ₂ is 5~12wt%, A
It is made of a ZnO-based glass containing l ₂ O ₃ at 1 to 10%, and further contains R ₂ O and MO with an upper limit of 10 wt%, and has a dielectric constant ε of 7 or less. The plasma display panel according to claim 1, wherein However, R is Li, Na, K, Rb, Cs, Cu, A
g is selected from M, M is Mg, Ca, Ba, Sr, C
o, Cr. 7. The dielectric layer, wherein ZnO is 1 to 15 wt.
%, B ₂ O ₃ is 20 to 40 wt%, SiO ₂ is 10 to 30 wt%,
Al ₂ O ₃ is 5~25wt%, Li ₂ O is 3~10wt%, MO
2. The plasma display panel according to claim 1, wherein the PDP is made of a ZnO-based glass having a composition of 2 to 15 wt%, and has a dielectric constant ε of 7 or less. Where M
Is selected from Mg, Ca, Ba, Sr, Co, and Cr. 8. The dielectric layer, wherein ZnO is 35 to 60 wt.
%, B ₂ O ₃ is 25 to 45 wt%, SiO ₂ is 1 to 10.5 wt%,
Al ₂ O ₃ is contained at 1 to 10 wt%, and Na ₂ O is 5 wt%
% Of ZnO-based glass contained as an upper limit,
2. The plasma display panel according to claim 1, wherein the dielectric constant ε is 7 or less. 9. The dielectric layer contains ZnO of 35 to 60 wt.
%, B ₂ O ₃ is 25~45wt%, SiO ₂ is 1~12wt%, A
l ₂ O ₃ is contained at 1 to 10 wt%, and K ₂ O is 5 wt%
2. The plasma display panel according to claim 1, wherein the plasma display panel is made of a ZnO-based glass containing, as an upper limit, a dielectric constant ε of 7 or less. 10. The dielectric layer has Nb ₂ O ₅ of 9 to 19 watts.
t%, ZnO is 35~60wt%, B ₂ O ₃ is 20~38wt%,
Claim SiO ₂ is 1～10.5Wt%, consists ZnO-Nb ₂ O ₅ based glass Li ₂ O is contained a 5 wt% as an upper limit, and wherein the dielectric constant ε of 7 or less 1 The plasma display panel described in 1. 11. A discharge gas is sealed between a first plate and a second plate provided to face each other, and a plurality of pairs of Ag or Cu are displayed on the surface of the first plate facing the second plate. An electrode is formed, and a plasma display panel having a configuration in which a dielectric layer is coated on a surface of the first plate so as to cover the plurality of pairs of display electrodes, wherein the dielectric layer is formed of P ₂ O ₅ is 20 ~ 30wt%, ZnO is 30 ~
40wt%, B ₂ O ₃ is 30~45wt%, SiO ₂ is 1~10wt
%, Wherein the product of the dielectric constant ε and the loss coefficient tan δ is 0.12 or less. 12. A discharge gas is sealed between a first plate and a second plate provided opposite each other, and a plurality of pairs of Ag or Cu are displayed on a surface of the first plate facing the second plate. An electrode is formed, and a plasma display panel having a configuration in which a dielectric layer is coated on the surface of the first plate so as to cover the plurality of pairs of display electrodes, wherein the dielectric layer is made of ZnO. ~45wt%, 40~ is B ₂ O ₃
A plasma display panel comprising a glass having a composition of 60 wt% and SiO _{2 of 1} to 15 wt%, wherein a product of a dielectric constant ε thereof and a loss coefficient tan δ is 0.12 or less. 13. A discharge gas is sealed between a first plate and a second plate provided opposite to each other, and a plurality of pairs of Ag or Cu are displayed on the surface of the first plate facing the second plate. An electrode is formed, and a plasma display panel having a configuration in which a dielectric layer is coated on the surface of the first plate so as to cover the plurality of pairs of display electrodes, wherein the dielectric layer is made of ZnO. ~45wt%, 40~ is B ₂ O ₃
55 wt%, SiO ₂ is 110 wt.%, The Al ₂ O ₃ 1~10w
A plasma display panel comprising glass having a composition of 1% to 5% by weight of t% and CaO, wherein a product of its dielectric constant ε and its loss coefficient tan δ is 0.12 or less. 14. A discharge gas is sealed between a first plate and a second plate provided to face each other, and a plurality of pairs of Ag or Cu are displayed on the surface of the first plate facing the second plate. An electrode is formed, and a plasma display panel having a configuration in which a dielectric layer is coated on the surface of the first plate so as to cover the plurality of pairs of display electrodes, wherein the dielectric layer is formed of ZnO. 60 wt%, the B ₂ O _3. 35 to
45 wt%, SiO ₂ is 110 wt.%, The Al ₂ O ₃ 1~10w
A plasma display panel made of glass having a composition of t%, wherein a product of its dielectric constant ε and its loss coefficient tan δ is 0.12 or less. 15. A discharge gas is sealed between a first plate and a second plate provided opposite to each other, and a plurality of pairs of Ag or Cu are displayed on a surface of the first plate facing the second plate. An electrode is formed, and a plasma display panel having a configuration in which a dielectric layer is coated on the surface of the first plate so as to cover the plurality of pairs of display electrodes, wherein the dielectric layer is made of ZnO. 60 wt%,. 30 to the B ₂ O ₃
50 wt%, SiO ₂ is 110 wt.%, The Al ₂ O ₃ 1~10w
A plasma display panel made of glass having a composition of t%, wherein a product of its dielectric constant ε and its loss coefficient tan δ is 0.12 or less. 16. A discharge gas is sealed between a first plate and a second plate provided facing each other, and a plurality of pairs of Ag or Cu are displayed on a surface of the first plate facing the second plate. An electrode is formed, and a plasma display panel having a configuration in which a dielectric layer is coated on a surface of the first plate so as to cover the plurality of pairs of display electrodes, wherein the dielectric layer comprises Nb ₂ O ₅ is 9-20 wt%, ZnO is 35
~60wt%, B ₂ O ₃ is 25~40wt%, SiO ₂ is 1~10w
A plasma display panel made of glass having a composition of t%, wherein a product of its dielectric constant ε and its loss coefficient tan δ is 0.12 or less. 17. A discharge gas is sealed between a first plate and a second plate provided to face each other, and a plurality of pairs of Ag or Cu are displayed on the surface of the first plate facing the second plate. An electrode is formed, a plasma display panel having a configuration in which a dielectric layer is coated on the surface of the first plate so as to cover the plurality of pairs of display electrodes, wherein the dielectric layer is made of SiO ₂ , A first dielectric layer made of a thin film of any one of Al ₂ O ₃ and ZnO, or glass having a composition containing any of PbO and Bi ₂ O ₃ , and formed to cover the plurality of pairs of display electrodes; A plasma characterized by comprising a glass having a composition in which a product of a dielectric constant ε and a loss coefficient tan δ is a value of 0.12 or less, and a second dielectric layer coated on the first dielectric layer. Display panel 18. The method according to claim 18, wherein the second dielectric layer comprises at least Zn.
A plasma display panel comprising glass containing O and 10 wt% or less of R ₂ O and containing no PbO and Bi ₂ O ₃ . Where R is Li, N
a, K, Rb, Cs, Cu, and Ag. 18. The plasma display panel according to claim 17, wherein R ₂ O is contained in an amount of 10 wt% as an upper limit. 19. The total thickness of the dielectric layer is 40 μm.
18. The plasma display panel according to claim 17, wherein the thickness is not more than m, and the thickness of the first dielectric layer is not more than half of the total thickness.