JP2001148514A - Illuminating light source - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce cost and prolong service life of an illuminating light source. SOLUTION: This illuminating light source is composed of a substrate (printed-circuit board) 100 that has a plurality of depressed parts Cav with a minimum internal diameter of approximately 2 mm, a semiconductor light- emitting device 200 that is mounted into each depressed part Cav of the substrate 100, and resin 300, that disperses a phosphor for retaining, and is filled into each depressed part Cav of the substrate 100.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an illumination light source using a semiconductor light emitting device.

[0002]

2. Description of the Related Art Hitherto, various light sources constituted by semiconductor light emitting elements have been proposed.
In Japanese Patent Application Laid-Open Publication No. H10-209, a light emitting element mounted on a stem is made of a gallium nitride-based compound semiconductor represented by a general formula Ga _x Al ₁ -xN (where 0 ≦ X ≦ 1), and further includes a resin mold. A fluorescent dye or a fluorescent pigment that emits fluorescence when excited by emission of the gallium nitride-based compound semiconductor is added therein, and the emission peak is around 430 nm and 370.
There is disclosed a light emitting diode which can improve the visibility of an LED having a light emitting element made of a gallium nitride-based compound semiconductor material having a wavelength in the vicinity of nm and can improve the luminance thereof.

[0003] Also, JP-A-7-99345 discloses that
The entire light emitting element in which the light emitting chip is mounted on the bottom of the cup that reflects the light emitted from the light emitting chip toward the light emission observation surface, the first resin filling the inside of the cup, and the second resin surrounding the first resin The first resin contains a fluorescent substance that converts the emission wavelength of the light emitting chip to another wavelength, or a filter substance that partially absorbs the emission wavelength of the light emitting chip, and is converted. LED with improved light collection
There is disclosed a light-emitting diode that enhances the brightness of the LED and that does not cause color mixing even when LEDs having different wavelengths are arranged close to each other when a fluorescent pigment is used.

Further, Japanese Patent No. 2927279 discloses an LED chip in which a light emitting layer disposed in a cup of a mount lead is a gallium nitride compound semiconductor,
An inner lead electrically connected to the ED chip using a conductive wire, a coating member in which a cup is filled with a transparent resin containing a phosphor that emits light when excited by the light emitted from the LED chip; A member, an LED chip, a conductive wire, and a mold member for covering the tip of the mount lead and the inner lead. The LED chip emits a monochromatic peak wavelength of 400 to 530 nm in emission spectrum, and the phosphor is ( _{RE 1-x Sm x) 3} (Al y Ga 1-y) 5 O 12: a Ce (However, 0 ≦ x ≦ 1,0 ≦ y ≦ 1, RE is, Y, G
d) and an LED
A light emitting diode capable of emitting white light by transmitting light from a chip and light from a phosphor through a mold member is described.

[0005] The above-mentioned document describes that a light-emitting diode in which the color of light emitted from an LED chip is color-converted by a phosphor can emit another color such as white light using one type of LED chip. is there. Specifically, as a light-emitting diode that wavelength-converted the light emission from the LED chip,
It is described that white light can be emitted by mixing color of light emitted from a blue light emitting diode and light emitted from a phosphor that absorbs the emitted light and emits yellow light. That is, white light emission is obtained by mixing color of yellow light emitted from the phosphor and blue light emitted from the light emitting diode that has not been absorbed by the phosphor.

Here, a specific structure of the light emitting diode described in Japanese Patent No. 2927279 will be described. As shown in FIG. 15, a light emitting diode in which the resin portion has a shell shape as in the related art is a lead frame mount.・ Lead 1
The LED chip 2 is mounted in the cup, and both electrodes of the LED chip 2 are respectively connected to the mount lead 1 and the inner lead 4 by an electric wire 3 by wire bonding, and the cup (stem) of the mount lead 1 is connected.
Inside, a coating portion 5 is provided, and the LED chip 2 side is covered with a shell-shaped mold member 6.

A chip type light emitting diode is shown in FIG.
As shown in FIG. 6, the LED chip 13 is mounted on the housing 12 having the electrode 11, and each electrode of the LED chip 13 is connected to each electrode 11 of the housing 12 by an electric wire 14 by wire bonding. It has a structure in which a mold member 15 is provided therein.

Further, as shown in FIG. 17, the planar light source uses a light guide plate 21 for converting a linear light source into a planar light source and the like.
3 is mounted thereon, and a coating portion 24 containing photoluminescence is provided therein.

Further, as shown in FIG. 18, the LED display comprises a housing 31, a light emitting diode 32 and a filler 33.
Etc. Similarly, a unit currently used for lighting is similarly configured by mounting a plurality of LEDs on a printed wiring board.

[0010]

However, FIG.
In addition, in the light emitting diode shown in FIG. 16, since the LED chip is mounted on a mounting lead or a housing, when the light emitting diode is mounted on a substrate, it has to be mounted twice, which causes a problem of an increase in cost.

Further, in order to dispose the phosphor (substance) in the cup, the phosphor must be contained in the resin. However, the resin containing the phosphor deteriorates when exposed to high-energy blue light and a high temperature near the element at the same time, so that the life of the light source is shortened.

In the cup of the mount lead, L
When a coating portion containing a photoluminescent phosphor for converting light emission of an ED chip is provided, it is difficult to control the amount of the phosphor and color variation is likely to occur. For example, if the desired emission color is white and the amount of the phosphor varies, the yellow light emitted from the phosphor varies, and the resulting emission color changes to a high-temperature bluish tone, Conversely, the color changes to a low temperature yellowish color. Such a variation in color tone is easily discriminated as color unevenness, particularly when a plurality of light sources are provided in a plane.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has as its object to provide an illumination light source capable of reducing costs and extending the life.

[0014]

According to an aspect of the present invention, there is provided an illumination light source comprising: a substrate having a plurality of depressions having a minimum inner diameter of 2 mm or more; and a semiconductor mounted in each depression of the substrate. It comprises a light emitting element and a resin that disperses and holds the phosphor and fills each recess of the substrate.

In this configuration, the number of times of mounting is one, so that the cost can be reduced. In particular, as the number of semiconductor light emitting elements provided on the substrate increases, the effect of cost reduction becomes even greater. Further, compared with the conventional method in which the fluorescent material is provided in the cup on which the LED chip is mounted, the area where the fluorescent material is dispersed and held can be greatly increased. In this case, since the concentration of the phosphor contained in the region where the phosphor is dispersed and held can be reduced, the time that light stays in the region where the phosphor is dispersed and held due to multiple scattering between the phosphors is shortened, and the photochemical reaction is performed. It is possible to preferably suppress the deterioration of the phosphor and the resin that holds the phosphor by dispersion.
As a result, the life can be extended.

According to a second aspect of the present invention, there is provided an illumination light source for dispersing and holding a substrate having a plurality of depressions larger than a stem of a bullet-shaped light emitting diode, a semiconductor light emitting element mounted in each depression of the substrate, and a phosphor. A resin filled in each of the depressions of the substrate.

In this configuration, the number of times of mounting is one, so that the cost can be reduced. In particular, as the number of semiconductor light emitting elements provided on the substrate increases, the effect of cost reduction becomes even greater. Further, the area for dispersing and holding the phosphor can be made very large as compared with the shell-type light emitting diode. In this case, since the concentration of the phosphor contained in the region where the phosphor is dispersed and held can be reduced, the time that light stays in the region where the phosphor is dispersed and held due to multiple scattering between the phosphors is shortened, and the photochemical reaction is performed. It is possible to preferably suppress the deterioration of the phosphor and the resin that holds the phosphor by dispersion. As a result, the life can be extended.

In the illumination light source according to the first or second aspect, the substrate may be configured by a printed wiring board in which the plurality of depressions are formed (claim 3). This configuration also enables cost reduction and life extension.

Further, in the illumination light source according to any one of claims 1 to 3, the substrate may include a printed wiring board, and a plurality of holes forming the plurality of recesses. It may be configured by a frame attached to the surface (claim 4). This configuration also enables cost reduction and life extension.

Further, in the illumination light source according to any one of claims 1 to 4, the concentration of the phosphor in the resin is higher in a region near the semiconductor light emitting element mounted in the same recess than in another region. May be lower (claim 5). In this configuration, for example, when a semiconductor light emitting element that emits blue light is employed, deterioration due to simultaneous exposure of the resin to high energy blue light and high temperature near the semiconductor light emitting element is suppressed, and as a result, the life is prolonged. Becomes possible.

In the illumination light source according to any one of claims 1 to 4, the resin is a first resin that is capable of dispersing and holding the first transparent resin filled in the recess and the phosphor. (Claim 6). According to this structure, for example, when a semiconductor light emitting element that emits blue light is employed, the second resin is not simultaneously exposed to high-energy blue light and high temperature near the semiconductor light emitting element. It can be extended more suitably. Further, it is possible to actively finely adjust the color tone.

Further, in the illumination light source according to claim 6,
The resin may have a structure having a transparent and layered third resin laminated on the second resin (claim 7). According to this structure, the second resin for dispersing and holding the phosphor is covered and protected by the third resin, so that the life can be further extended.

Further, in the illumination light source according to claim 7,
The first resin may have flexibility, and the third resin may have weather resistance (claim 8). According to this configuration,
The stress (stress) applied to the semiconductor light emitting element and the like can be reduced by the first resin. In addition, the third resin can prevent the second resin that disperses and holds the phosphor from deteriorating.

Further, in the illumination light source according to claim 7 or 8, the second resin may have a structure formed in a plate shape (claim 9). According to this structure, it is possible to reduce the stress on the semiconductor light emitting element and the like and to prevent the deterioration of the second resin for dispersing and holding the phosphor.

Further, in the illumination light source according to claim 1 or 2, the resin may have a structure including a translucent resin layer and a phosphor layer formed on a lower surface of the resin layer. ). According to this structure, cost reduction and life extension are possible.

Further, in the illumination light source according to the first or second aspect, a configuration may be adopted in which a lens member provided on the resin is provided. This configuration also enables cost reduction and life extension.

[0027]

FIG. 1 is a schematic view showing a sectional structure of an illumination light source according to a first embodiment of the present invention. The first embodiment will be described below with reference to this drawing. However, FIG. 1 shows a part of the sectional structure of the illumination light source.

The illumination light source shown in FIG. 1 comprises a plurality of light sources arranged, for example, in a linear or matrix form.
And a plurality of semiconductor light emitting elements 200 mounted on the substrate 100, and a resin 300 provided in a region of each semiconductor light emitting element 200.

The substrate 100 is a printed circuit board on which a desired circuit is provided, and has a minimum inner diameter of about 2 mm and a maximum inner diameter of 3 mm.
A plurality of (in FIG. 1, only one is shown in FIG. 1) metal base 100a having a plurality of inverted truncated conical cavities formed on the upper surface side thereof.
And an insulating layer 100 on the upper surface of the metal base 100a.
b is laminated on one surface, and a wiring pattern conductor 100c is laminated on a required portion on the upper surface of the insulating layer 100b. However, bonding pads are provided on the wiring pattern conductor 100c in FIG. In addition, several cavities Cav
May be a procedure formed beforehand on the metal base 100a before manufacturing the substrate 100, or a procedure formed later by press molding or the like. Also, the metal base 100a
Is formed of aluminum or copper having good heat conductivity.

The semiconductor light emitting device 200 is a blue LED device made of a gallium nitride-based compound semiconductor. P and N electrodes connected to the corresponding wiring pattern conductor 100c are connected to the same surface by lead wires W formed by wire bonding. (The upper surface in the figure).

The resin 300 is made of a translucent resin.
A phosphor (not shown) that absorbs blue light from the semiconductor light emitting element 200 and emits yellow light is dispersed and held therein, and is filled in each cavity Cav of the substrate 100.

Next, a procedure for manufacturing the illumination light source having the above-described configuration will be described. First, the substrate 100 is prepared, and the semiconductor light emitting device 200 is bonded and fixed (mounted) with, for example, a transparent resin at the center of the bottom surface in each recess Cav. At this time, needless to say, other elements are mounted if necessary. Subsequently, the semiconductor light emitting element 20 is connected to the lead wire W by wire bonding.
0 is connected to the corresponding wiring pattern conductor 100c. After that, as the resin 300, a translucent resin is filled into each recess Cav of the substrate 100 while mixing the above-described phosphor. At this time, as shown in FIG. 1, the resin 300 is formed in a convex lens shape that rises upward from the substrate 100.

In the illumination light source thus configured, when the semiconductor light emitting element 200 emits light, the yellow light obtained by absorbing the blue light by the phosphor and the blue light not absorbed by the phosphor are obtained. White light emission can be obtained by mixing with light.

As described above, according to the first embodiment, only one mounting is required, so that the cost can be reduced. In particular,
As the number of semiconductor light emitting devices 200 provided on the substrate 100 increases, the effect of cost reduction becomes even greater.

Further, the phosphor-containing area can be made very large as compared with the conventional method in which a phosphor is provided in a cup on which an LED chip is mounted. In this case, since the concentration of the phosphor contained in the phosphor-containing region can be reduced, the time during which light stays in the phosphor-containing region due to multiple scattering between the phosphors is shortened. Deterioration of the contained resin can be suitably suppressed.

In the first embodiment, the semiconductor light emitting element has a structure in which the semiconductor light emitting element is formed in a chip shape having P and N electrodes connected to the corresponding wiring pattern conductors on the same surface with lead wires by wire bonding. But
However, the present invention is not limited to this, and a structure in which P and N electrodes connected to the corresponding wiring pattern conductors are formed on a chip having both surfaces facing in opposite directions by a mounting wire by die bonding and a lead wire by wire bonding may be used. . Alternatively, a structure may be employed in which a chip is formed on both sides of P and N electrodes connected to the corresponding wiring pattern conductor by mounting bonding by die bonding. It is needless to say that any of these structures can be mounted on a substrate, and the above effects can be obtained.

FIG. 2 is a schematic diagram showing a cross-sectional structure of an illumination light source according to a second embodiment of the present invention, and the second embodiment will be described below with reference to FIG. However, FIG. 2 shows a part of the sectional structure of the illumination light source.

The illumination light source shown in FIG. 2 includes a plurality of semiconductor light emitting elements 200 and a resin 300 in the same manner as in the first embodiment.
1 is provided.

The substrate 101 is the same as the printed wiring board 100 of the first embodiment, and a mortar attached to the upper surface of the printed wiring board 100 with, for example, an adhesive, and communicating with each recess Cav of the printed wiring board 100. And a reflective frame 100d in which a plurality of mold holes H1 are formed. The reflection frame 100d is made of resin, metal, or the like.
The peripheral wall of 1 is mirror-finished. Also, the reflection frame 10
Since each hole H1 of 0d communicates with the depression Cav, the minimum inner diameter is 3 mm, and the maximum inner diameter is larger (for example, 5 to 10 mm).

As described above, according to the second embodiment, the same effects as those of the first embodiment can be obtained. In addition, the reflection frame 100d having a plurality of mirror-finished holes H1 is integrally provided on the printed wiring board 100. Since the substrate 101 is formed by the above, optical characteristics can be improved.

FIG. 3 is a schematic diagram showing a cross-sectional structure of an illumination light source according to a third embodiment of the present invention, and the third embodiment will be described below with reference to FIG. However, FIG. 3 shows a part of the cross-sectional structure of the illumination light source.

The illumination light source shown in FIG. 3 includes a plurality of semiconductor light emitting elements 200 and a resin 300 in the same manner as in the second embodiment.
2 is provided.

The substrate 102 has a mortar-shaped (minimum inner diameter of about 2 mm, maximum internal diameter of about 3 mm) hole H
2 is constituted by a printed wiring board in which a plurality of reflection frames 102d having a plurality of holes are integrally attached to the upper surface. The printed wiring board itself has a metal base 102a formed in a plate shape from aluminum, copper, or the like having good heat conductivity, and an insulating layer 102b is laminated on an upper surface of the metal base 102a. A desired circuit is provided by laminating the wiring pattern conductor 102c at a necessary position on the upper surface. The peripheral wall of each hole H2 is mirror-finished. Then, the printed wiring board in the substrate 102 and each hole H
2, a semiconductor light emitting element 200 is mounted at the center of the bottom surface in the inverted truncated conical recess formed by each of the above-mentioned steps, and each electrode is connected to the corresponding wiring pattern conductor 102c by a lead wire W by wire bonding. .

As described above, according to the third embodiment, the same effects as those of the second embodiment can be obtained, and the substrate 1
Since the formation of a plurality of depressions in the printed wiring board No. 02 can be omitted, the manufacture of the illumination light source becomes easy.

In the third embodiment, the substrate 102 is
Although the configuration has a metal-based printed wiring board, the configuration is not limited to this, and a configuration having, for example, a glass epoxy printed wiring board may be used. In the case of this configuration, the insulating layer 10
Needless to say, 2b becomes unnecessary.

FIG. 4 is a schematic view showing a cross-sectional structure of an illumination light source according to a fourth embodiment of the present invention. The fourth embodiment will be described below with reference to FIG. However, FIG. 4 shows a part of the sectional structure of the illumination light source.

The illumination light source shown in FIG. 4 includes a substrate 102 and a plurality of semiconductor light emitting devices 200 in the same manner as in the third embodiment.
1 is provided.

The resin 301 is made of a translucent resin, and disperses and holds a phosphor (not shown) that absorbs blue light from the semiconductor light emitting element 200 and emits yellow light.
The concentration of the phosphor in the resin 301 is lower in a region near the semiconductor light emitting element 200 mounted in the same recess than in other regions. Here, a method of making the concentration non-uniform in this way will be described. If the viscosity of the light-transmitting resin is reduced and left upside down during molding, the phosphor precipitates in the light-transmitting resin. Therefore, the concentration becomes non-uniform.
Alternatively, if resins having different phosphor concentrations are prepared and the molding is performed twice, or the casting is performed in two divided portions, the concentration becomes non-uniform. However, in the latter case, a resin having a high viscosity is used.

Next, an example of a procedure for manufacturing the illumination light source will be described. First, the substrate 102 is prepared, and the semiconductor light emitting device 200 is mounted at the center of the bottom in each recess. Then, the semiconductor light emitting element 2 is connected to the lead wire W by wire bonding.
00 is connected to the corresponding wiring pattern conductor 102c. After that, as the resin 301, each of the depressions of the substrate 102 is first filled with a resin having a low phosphor concentration, and then filled with a resin having a high phosphor concentration. At this time, as shown in FIG. 4, the resin 301 is filled so as to bulge upward in a convex lens shape above the substrate 102.

As described above, according to the fourth embodiment, the same effects as those of the third embodiment can be obtained, and the resin 3
Since the concentration of the phosphor in the area 01 is lower in the vicinity of the semiconductor light-emitting element 200 mounted in the same recess than in the other areas, the resin 301 emits high-energy blue light and high temperature near the element. Degradation due to simultaneous exposure to light can be suppressed, and as a result, the life of the light source can be extended.

FIG. 5 is a schematic diagram showing a cross-sectional structure of an illumination light source according to a fifth embodiment of the present invention, and the fifth embodiment will be described below with reference to FIG. However, FIG. 5 shows a part of the sectional structure of the illumination light source.

The illumination light source shown in FIG. 5 includes a substrate 102 and a plurality of semiconductor light emitting devices 200 in the same manner as in the fourth embodiment.
2 is provided.

The resin 302 is made of a light-transmitting resin, and absorbs blue light from the semiconductor light emitting element 200 and emits yellow light to disperse and hold the phosphor (not shown). Specifically, it has a structure having a light-transmitting resin 302a filled in a concave shape like a convex lens, and a light-transmitting resin 302b laminated on the resin 302a and dispersing and holding the phosphor. The resin 302b is provided by, for example, application or spraying.

As described above, according to the fifth embodiment, the same effects as those of the third embodiment can be obtained, and the resin 3
02 is made of the resin 302a and the resin 302b, so that the resin 302b of the resin 302 is not simultaneously exposed to the high-energy blue light and the high temperature near the element. Becomes possible.

Further, it is possible to actively finely adjust the color tone. That is, the color tone of light emission is determined by the amount of the phosphor. The larger the amount, the more yellow light components and the lower the color temperature, while the smaller the amount, the more blue light components and the color Since the temperature rises, if the structure of the fifth embodiment is adopted, the resin 302b as the phosphor layer can be laminated on the uppermost layer later, so that the color tone can be determined at the end of the process. . As a result, inventory adjustment and the like can be easily performed.

Further, since the resin 302b as the phosphor layer can be laminated over a wide area, it is possible to improve optical characteristics such as uniformity.

FIG. 6 is a schematic view showing a cross-sectional structure of an illumination light source according to a sixth embodiment of the present invention. The sixth embodiment will be described below with reference to FIG. FIG. 6 shows a part of the cross-sectional structure of the illumination light source.

The illumination light source shown in FIG. 6 includes a substrate 102 and a plurality of semiconductor light emitting elements 200 in the same manner as in the fifth embodiment.
3 is provided.

The resin 303 is made of a light-transmitting resin and absorbs blue light from the semiconductor light emitting element 200 and emits yellow light (not shown) in a dispersed manner. Specifically, a translucent resin 303a that fills each recess of the substrate 102 in a convex lens shape,
and a light-transmitting resin 303b that is laminated on the light-transmitting phosphor and disperses and holds the phosphor. However, resin 3
03b is laminated on the entire uppermost layer of the substrate 102, unlike the fifth embodiment. A plurality of semiconductor light emitting devices 200 are mounted on the substrate 102, and these semiconductor light emitting devices 2
When 00 is viewed from a distance, for example, light may be emitted as a planar light source, so that the resin 303b can be laminated on one surface of the uppermost layer.

As described above, according to the sixth embodiment, the same effects as those of the fifth embodiment can be obtained, and the resin 3
Since 03b is laminated on one surface of the uppermost layer, the process can be simplified as compared with the fifth embodiment.

FIG. 7 is a schematic view showing a cross-sectional structure of an illumination light source according to a seventh embodiment of the present invention. The seventh embodiment will be described below with reference to FIG. However, FIG. 7 shows a part of the cross-sectional structure of the illumination light source.

The illumination light source shown in FIG. 7 includes a substrate 102 and a plurality of semiconductor light emitting elements 200 in the same manner as in the sixth embodiment.
4 is provided.

The resin 304 is made of a translucent resin, and absorbs blue light from the semiconductor light emitting element 200 and emits yellow light to disperse and hold the phosphor (not shown). Specifically, it has a light-transmitting resin 304a that fills the entire inside of each depression of the substrate 102, and a light-transmitting resin 304b that is laminated on the resin 304a in a convex lens shape and disperses and holds the phosphor. It has a structure. However,
The resin 304b is laminated on the entire uppermost surface of the substrate 102.

As described above, according to the seventh embodiment, the same effects as those of the sixth embodiment can be obtained.

FIG. 8 is a schematic diagram showing a cross-sectional structure of an illumination light source according to an eighth embodiment of the present invention. The eighth embodiment will be described below with reference to FIG. However, FIG. 8 shows a part of the cross-sectional structure of the illumination light source.

The illumination light source shown in FIG. 8 includes a substrate 102 and a plurality of semiconductor light emitting elements 200 in the same manner as in the seventh embodiment.
5 is provided.

The resin 305 is made of a light-transmitting resin and absorbs blue light from the semiconductor light emitting element 200 to emit and emit yellow light. Specifically, a light-transmitting resin 305a that fills the entire inside of each recess of the substrate 102, a light-transmitting resin 305b that is stacked on the resin 305a in a convex lens shape and that disperses and holds the phosphor, The structure has a light-transmitting resin 305c laminated on the resin 305b. However, the resins 305b and 305c are sequentially laminated on one surface of the uppermost layer of the substrate 102.

As described above, according to the eighth embodiment, the same effects as those of the seventh embodiment can be obtained, and the resin 3
Since the resin layer 305b serving as the phosphor layer is protected by the layer 05c, the phosphor layer is not directly exposed to the outside, so that the phosphor layer can be prevented from being deteriorated due to a reaction with moisture or the like.

FIG. 9 is a schematic diagram showing a cross-sectional structure of an illumination light source according to a ninth embodiment of the present invention, and the ninth embodiment will be described below with reference to FIG. However, FIG. 9 shows a part of the sectional structure of the illumination light source.

The illumination light source shown in FIG. 9 includes a substrate 102 and a plurality of semiconductor light emitting elements 200 in the same manner as in the fifth embodiment.
6 is provided.

The resin 306 is made of a translucent resin, and absorbs blue light from the semiconductor light emitting element 200 and emits yellow light to disperse and hold the phosphor (not shown). Specifically, a translucent resin 306a that fills each recess of the substrate 102 with a convex lens shape,
The light-transmitting resin 306b laminated on the substrate a and having a uniform thickness and dispersing and holding the phosphor is provided, and the light-transmitting resin 306c laminated on the resin 306b. However, the resins 306b and 306c are individually provided in the respective depressions of the substrate 102.

As described above, according to the ninth embodiment, the same effects as those of the fifth embodiment can be obtained, and the resin 3
Since the resin 306b as the phosphor layer is protected by the lamination of the layer 06c, the phosphor layer is not directly exposed to the outside, so that the phosphor layer can be prevented from being deteriorated due to a reaction with moisture or the like. Further, by adjusting the partial thickness of the resin 306c, the irradiation angle can be controlled. Further, since the thickness of the resin 306b is made uniform, optical characteristics are improved.

If a flexible silicone resin or the like is used for the resin 306a, damage to the element and the lead wire W due to thermal expansion or vibration of the resin can be prevented.

FIG. 10 is a schematic view showing a cross-sectional structure of an illumination light source according to a tenth embodiment of the present invention, and the tenth embodiment will be described below with reference to FIG. However, FIG. 10 shows a part of the sectional structure of the illumination light source.

The illumination light source shown in FIG. 10 includes a substrate 100 and a plurality of semiconductor light emitting devices 200 in the same manner as in the first embodiment.
07.

The resin 307 is made of a light-transmitting resin, and absorbs blue light from the semiconductor light emitting element 200 and emits yellow light (not shown) in a dispersed manner. Specifically, a light-transmitting resin 307a that fills each of the depressions Cav of the substrate 100 in a convex lens shape, and a light-transmitting resin 307b that is laminated on the resin 307a with a uniform thickness and disperses and holds the phosphors And a translucent resin 307c laminated on the resin 307b. However, the resins 307b and 307c are
0 is individually provided in each of the cavities Cav. In addition, resin 30
A flexible silicone resin is used for 7a, and an epoxy resin having weather resistance is used for the resin 307c.

As described above, according to the tenth embodiment, the same effects as those of the first embodiment can be obtained, and the resin 307 is made of the resin 307a, the resin 307b, and the resin 307b.
c, the resin 307b of the resin 307 is not simultaneously exposed to the high-energy blue light and the high temperature near the element, so that the life of the light source can be suitably extended.

Further, since the resin 307b as the phosphor layer is protected by the lamination of the resin 307c, the phosphor layer is not directly exposed to the outside, and the phosphor layer is prevented from being deteriorated due to a reaction with moisture or the like. can do. In addition, resin 3
Since the thickness of 07b is made uniform, the optical characteristics are improved.

Furthermore, since the silicone resin is used for the resin 307a, the stress applied to the element and the like can be reduced. Further, since the epoxy resin is used for the resin 307c, deterioration of the phosphor layer can be prevented. Can be.

FIG. 11 is a schematic diagram showing a cross-sectional structure of an illumination light source according to an eleventh embodiment of the present invention. The eleventh embodiment will be described below with reference to FIG. However, FIG. 11 shows a part of the cross-sectional structure of the illumination light source.

The illumination light source of FIG. 11 includes a substrate 100 and a plurality of semiconductor light emitting elements 200 in the same manner as in the tenth embodiment, and further includes a resin 308 as a difference from the tenth embodiment.

The resin 308 is made of a light-transmitting resin and absorbs blue light from the semiconductor light emitting element 200 to emit and emit yellow light (not shown). Specifically, a light-transmitting resin 308a that fills the entire inside of each recess Cav of the substrate 100,
a, a transparent resin 308b laminated in a plate shape having a uniform thickness to disperse and hold the phosphor, and a transparent resin 308c laminated in a convex lens shape on the resin 308b. ing. However, the resin 308b, 308c
Are individually provided in the depressions Cav of the substrate 100. The resin 308a may be an epoxy resin, but a silicone resin having flexibility is used, and the resin 308c is an epoxy resin having weather resistance. Further, the resin 308b is formed in a plate shape in advance.

Next, a procedure for manufacturing the illumination light source having the above-described configuration will be described. First, the substrate 100 is prepared, and the semiconductor light emitting device 200 is mounted at the center of the bottom surface in each recess Cav. Subsequently, each electrode of the semiconductor light emitting device 200 is connected to the corresponding wiring pattern conductor 10 by a lead wire W by wire bonding.
0c. Then, as the resin 308, the substrate 10
The resin 308a is first filled into each of the depressions 0, the resin 308b is placed, and then the resin 308c is laminated in a convex lens shape.

As described above, according to the eleventh embodiment, the same effects as those of the tenth embodiment can be obtained, and if the concentration of the phosphor contained in the resin 308b is made constant,
Only by controlling the thickness of the resin 308b can quantitative control of the phosphor be performed very easily. Accordingly, the amount of the phosphor can be made uniform overall, and the amount of the phosphor can be adjusted to a predetermined constant value, so that color variation can be prevented.

FIG. 12 is a schematic view showing a cross-sectional structure of an illumination light source according to a twelfth embodiment of the present invention, and FIG. 13 is an explanatory view of a manufacturing procedure of the illumination light source shown in FIG. A twelfth embodiment will be described. Note that FIG. 12 shows a part of the cross-sectional structure of the illumination light source.

The illumination light source shown in FIG. 12 includes a substrate 102 and a plurality of semiconductor light emitting elements 200 in the same manner as in the eighth embodiment.
09.

The resin 309 is made of a light-transmitting resin, and absorbs blue light from the semiconductor light emitting element 200 and emits yellow light to disperse and hold the phosphor (not shown). Specifically, a translucent resin 309a that fills almost all of the depressions of the substrate 102, and the resin 309a
and a light-transmitting resin 309b laminated in a plate shape having a uniform thickness to disperse and hold the phosphor, and a light-transmitting resin 309c laminated in a convex lens shape on the resin 309b. ing. However, resin 309b, 309c
Are integrally formed in advance as shown in FIG. 13B, and are individually provided in the respective depressions of the substrate 102.

Next, a procedure for manufacturing the illumination light source having the above-described configuration will be described. First, the substrate 102 is prepared, and the semiconductor light emitting device 200 is mounted at the center of the bottom in each recess. Then, the semiconductor light emitting element 2 is connected to the lead wire W by wire bonding.
00 is connected to the corresponding wiring pattern conductor 102c. Thereafter, as the resin 309, first, the resin 309a is filled into each of the depressions of the substrate 102 (FIG. 13A).
Next, the integrally formed resins 309b, 309
c is laminated on the resin 309a.

As described above, according to the twelfth embodiment, the same effects as those of the eleventh embodiment can be obtained.

In the twelfth embodiment, the resin 309
Although b and 309c are integrally formed in advance, the present invention is not limited to this. A glass member having the same shape as the resin 309c may be used, and the glass member and the resin 309b may be integrally formed in advance. In this case, the phosphor does not have to be contained in the resin, and baking is possible.

In the twelfth embodiment, the resin 309
Is composed of the resins 309a, 309b, 309c, but since the resins 309b, 309c are integrally formed, the lower resin 309a may be omitted. In this case, the same effect as that of the twelfth embodiment can be obtained.

FIG. 14 is a schematic view showing a sectional structure of an illumination light source according to a thirteenth embodiment of the present invention. The thirteenth embodiment will be described below with reference to FIG. However, FIG. 13 shows a part of the sectional structure of the illumination light source.

The illumination light source shown in FIG. 14 includes a substrate 100 and a plurality of semiconductor light emitting elements 200 in the same manner as in the first embodiment.
10 is provided.

The resin 310 is made of a translucent resin, and absorbs blue light from the semiconductor light emitting element 200 and emits yellow light to disperse and hold the phosphor (not shown). Specifically, a translucent resin 310a that fills the entire inside of each recess Cav of the substrate 100,
and a light-transmitting resin 310b that is laminated in a convex lens shape on a and disperses and holds the phosphor. However, a silicone resin is used for the resin 310a, and an epoxy resin is used for the resin 310b.

In this configuration, the amount of the phosphor-containing resin is much larger than that of a conventional cup filled with elements. In the conventional cup, the diameter of the resin is at most 1 mm, but in the thirteenth embodiment, the diameter of the resin 310b is 3 mm.
As described above, since the capacity becomes about 10 times, the content concentration of the phosphor can be suppressed to about 1/10. When the concentration of the phosphor is low, the residence time of the high-energy light is short, and the degree of local coloring deterioration of the resin is low. In addition, the resin containing the phosphor is liable to deteriorate in proportion to the intensity of light from the semiconductor light emitting element 200, but is less likely to deteriorate exponentially as the distance from the semiconductor light emitting element 200 becomes higher. The area where light is scattered by the phosphor and stays there is also ten times the volume, and the resin 310a is interposed between the areas and the low concentration is added, so that the resin containing the phosphor is hardly deteriorated. Become.

As described above, according to the thirteenth embodiment, the same effects as those of the first embodiment can be obtained. In addition, as described above, the resin 310b is simultaneously exposed to the high-energy blue light and the high temperature near the element. Therefore, it is possible to preferably extend the life of the light source.

Further, since each light source is formed directly on the substrate 100, a wider area can be allocated to the optical system, and even if each mounting area is enlarged as described above, light distribution control becomes possible.

Further, since the silicone resin is used for the resin 310a, the stress applied to the element and the like can be reduced, and since the epoxy resin is used for the resin 310b, the deterioration of the phosphor layer can be prevented.

As described above, as described in each of the above embodiments,
The resin containing the phosphor and the lens-shaped resin can reduce the number of steps and homogenize the structure. Further, by using a resin having flexibility in the peripheral portion of the semiconductor light emitting element 200, deterioration of the element and coloring of the resin are reduced,
The life of the light source can be extended. Furthermore, compared to the case where the phosphor is filled in the cup in which the element is mounted, the resin containing the phosphor can be made very large, and the heat radiation is improved by the metal base and the reflection frame, so that the phosphor and the resin deteriorate. It is difficult, and the luminous flux reduction life of the light source is prolonged.

[0100]

As is apparent from the above description, according to the first aspect of the present invention, there are provided a substrate having a plurality of depressions having a minimum inner diameter of 2 mm or more, and a semiconductor light emitting element mounted in each depression of the substrate. And a resin that disperses and holds the phosphor and fills each recess of the substrate, so that cost reduction and life extension can be achieved.

According to the second aspect of the present invention, the minimum inner diameter 2
a substrate having a plurality of depressions of at least mm, a semiconductor light emitting element mounted in each depression of the substrate, and a resin that disperses and holds a phosphor and is filled in each depression of the substrate, thereby reducing costs and extending the life. Becomes possible.

According to the third aspect of the present invention, in the illumination light source according to the first or second aspect, the substrate is made of a printed wiring board having the plurality of recesses formed. Life extension is possible.

According to the invention set forth in claim 4, claims 1 to 1 are provided.
3. In the illumination light source according to any one of the items 3,
It is composed of a printed wiring board and a frame body in which a plurality of holes forming the plurality of recesses are formed and attached on one surface of the printed wiring board. Also in this configuration, cost reduction and life extension can be achieved. Will be possible.

According to the invention set forth in claim 5, claims 1 to 1 are provided.
5. In the illumination light source according to any one of the items 4, the phosphor in the resin has a longer life because the concentration in a region near the semiconductor light emitting element mounted in the same recess is lower than that in other regions. .

According to the sixth aspect of the present invention,
4. In the illumination light source according to any one of the items 4,
Since the light-transmitting first resin filled in the depressions and the second resin that disperses and holds the phosphor are provided outside the first resin, the life can be more preferably extended. Further, it is possible to actively finely adjust the color tone.

According to the seventh aspect of the present invention, in the illumination light source according to the sixth aspect, since the resin has a transparent and layered third resin laminated on the second resin, the life is further extended. be able to.

According to the invention of claim 8, in the illumination light source of claim 7, the first resin has flexibility,
Since the third resin has weather resistance, it is possible to reduce stress applied to a semiconductor light emitting element and the like and to prevent the second resin from deteriorating.

According to the ninth aspect of the present invention, in the illumination light source according to the seventh or eighth aspect, the second resin is formed in a plate-like shape. In addition, it is possible to prevent deterioration of the second resin that holds the phosphor in a dispersed state.

According to the tenth aspect, the first aspect is provided.
Or in the illumination light source according to 2, the resin is composed of a translucent resin layer and a phosphor layer formed on the lower surface of the resin layer, and this structure also enables cost reduction and life extension. .

According to the eleventh aspect, according to the first aspect,
Or the illumination light source according to item 2, further comprising a lens member provided on the resin, and this configuration also enables cost reduction and life extension.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing a cross-sectional structure of an illumination light source according to a first embodiment of the present invention.

FIG. 2 is a schematic diagram illustrating a cross-sectional structure of an illumination light source according to a second embodiment of the present invention.

FIG. 3 is a schematic diagram illustrating a cross-sectional structure of an illumination light source according to a third embodiment of the present invention.

FIG. 4 is a schematic diagram showing a cross-sectional structure of an illumination light source according to a fourth embodiment of the present invention.

FIG. 5 is a schematic diagram illustrating a cross-sectional structure of an illumination light source according to a fifth embodiment of the present invention.

FIG. 6 is a schematic diagram illustrating a cross-sectional structure of an illumination light source according to a sixth embodiment of the present invention.

FIG. 7 is a schematic diagram illustrating a cross-sectional structure of an illumination light source according to a seventh embodiment of the present invention.

FIG. 8 is a schematic diagram showing a cross-sectional structure of an illumination light source according to an eighth embodiment of the present invention.

FIG. 9 is a schematic diagram illustrating a cross-sectional structure of an illumination light source according to a ninth embodiment of the present invention.

FIG. 10 is a schematic diagram showing a cross-sectional structure of an illumination light source according to a tenth embodiment of the present invention.

FIG. 11 is a schematic diagram showing a cross-sectional structure of an illumination light source according to an eleventh embodiment of the present invention.

FIG. 12 is a schematic diagram showing a cross-sectional structure of an illumination light source according to a twelfth embodiment of the present invention.

FIG. 13 is an explanatory diagram of a manufacturing procedure of the illumination light source shown in FIG.

FIG. 14 is a schematic diagram showing a cross-sectional structure of an illumination light source according to a thirteenth embodiment of the present invention.

FIG. 15 is a schematic view showing a cross-sectional structure of a conventional light emitting diode.

FIG. 16 is a schematic diagram showing a cross-sectional structure of a conventional light emitting diode.

FIG. 17 is a schematic diagram illustrating a cross-sectional structure of a conventional planar light source.

FIG. 18 is a schematic view showing a conventional LED display.

[Explanation of symbols]

 100 to 102 substrate 200 semiconductor light emitting element 300 to 310 resin

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Eiji Shiohama, Inventor, Matsushita Electric Works Co., Ltd. 1048, Kadoma, Kadoma, Osaka Prefecture (72) Inventor Jiro Hashizume 1048, Kadoma, Kazuma, Kadoma, Osaka, Japan Terms (reference) 5F041 AA05 AA43 DA13 DA20 DA46 DA56 DA58 EE11 FF11

Claims (11)

[Claims] 1. A substrate having a plurality of depressions having a minimum inner diameter of 2 mm or more, a semiconductor light emitting element mounted in each depression of the substrate, and a resin which disperses and holds a phosphor and fills each depression of the substrate. Illumination light source. 2. A substrate having a plurality of depressions larger than a stem of a bullet-shaped light emitting diode; a semiconductor light emitting element mounted in each depression of the substrate; and a phosphor dispersedly held and filled in each depression of the substrate. An illumination light source comprising a resin. 3. The illumination light source according to claim 1, wherein the substrate is a printed wiring board in which the plurality of depressions are formed. 4. The printed circuit board according to claim 1, wherein the printed circuit board comprises a frame, and a plurality of holes forming the plurality of recesses are formed in the printed circuit board and attached to one surface of the printed circuit board. ~ 3
The illumination light source according to any one of the above. 5. The illumination light source according to claim 1, wherein the concentration of the phosphor in the resin is lower in a region near the semiconductor light emitting element mounted in the same recess than in other regions. . 6. The resin according to claim 1, wherein the resin comprises a light-transmitting first resin filled in the recess, and a second resin provided to disperse and hold the phosphor and provided outside the first resin. 4
The illumination light source according to any one of the above. 7. The illumination light source according to claim 6, wherein the resin includes a transparent and layered third resin laminated on the second resin. 8. The third resin according to claim 1, wherein the first resin has flexibility.
The illumination light source according to claim 7, wherein the resin has weather resistance. 9. The illumination light source according to claim 7, wherein the second resin is formed in a plate shape. 10. The illumination light source according to claim 1, wherein the resin comprises a translucent resin layer and a phosphor layer formed on a lower surface of the resin layer. 11. The illumination light source according to claim 1, further comprising a lens member provided on said resin.