JP2001144362A - Semiconductor laser device and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a semiconductor laser device, where when the laser radiations from its semiconductor laser element having an astigmatic difference are focused spot-wise in illuminated planes by using its collimator lens and its condenser lens, the laser radiations can be focused in the identical image plane with their minimum beam-diameters in both vertical/horizontal directions, which are respectively vertical/parallel to the junction plane of its semiconductor laser element. SOLUTION: A semiconductor laser apparatus is so configured that the fine adjustment of a space L1 (L1=Lo+Lc, Lo: a reference space, Lc: an increment) between its semiconductor laser element 1 and its collimator 2 can be set. By the setting of the fine adjustment, there are generated in an identical image plane minimum-beam diameter positions Py, Px in both the vertical/horizontal directions of the laser radiations of the laser element 1, which are respectively vertical/parallel to the junction plane of the laser element 1.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device for focusing a high-power laser beam emitted from a semiconductor laser element on a surface to be irradiated using a collimator lens and a condenser lens, and a method of manufacturing the same.

[0002]

2. Description of the Related Art As a recording method of a Braille printer, for example, a recording medium having a heat-sensitive layer whose thermal expansion changes irreversibly by heating is used, and a laser beam is focused on the recording medium and irradiated with the laser beam. There is a method of selectively changing the thermal expansion of the heat-sensitive layer, thereby forming irregularities in a Braille pattern. In a semiconductor laser device used for such an application, it is necessary to focus as much light energy as possible on a small point as much as possible in order to increase the efficiency and resolution of irradiation.

For this reason, conventionally, a condensing optical system that uses a high-output semiconductor laser element and that condenses a laser beam emitted from the laser element into a spot using a collimator lens and a condensing lens. Was used.

FIG. 9 shows a schematic configuration of a conventional semiconductor laser device. The device shown in FIG. 1 includes a high-power semiconductor laser device 1, a collimator lens 2, a beam shaping optical system 3, and a condenser lens 4.

The laser beam emitted from the laser element 1 is converted into a parallel beam by a collimator lens 2 and then collimated by a condenser lens 4.
The spot is condensed in the form of a spot. At this time, the beam shaping optical system 3 performs correction so that the beam cross-sectional shape becomes a perfect circle, that is, correction of so-called astigmatism. As a result, spot light is condensed in a perfect circle that is not deviated in either the vertical or horizontal direction.

A beam shaping optical system is disclosed in, for example,
As described in Japanese Patent Application Laid-Open No. 52071, it is constituted by using a plane parallel plate or a cylindrical lens having a large radius of curvature.

[0007]

However, the present inventor has clarified that the above-described apparatus has the following problems.

That is, the laser beam radiation from the semiconductor laser device 1 is divided into a horizontal direction and a vertical direction parallel to the bonding surface of the semiconductor as shown by a solid line (Ly) and a wavy line (Lx) in FIG. There is a problem that the so-called beam waste position (Ey, Ex) where the laser light beam is minimized is different. That is, there is an astigmatic difference (Ex ≠ Ey) in which the apparent position of the laser light source differs between the light beam Lx extending in the horizontal direction and the light beam Ly extending in the vertical direction.

Although the vertical beam waste position Ey can be regarded as the end face of the semiconductor, the horizontal beam waste position Ex is said to be located slightly inside the end face. Even if the light beam having the astigmatic difference is spot-condensed on the irradiated surface by the collimator lens 1 and the condensing lens 4, as shown in FIG. 10, the condensing pattern on the irradiated surface (image surface) is Not a perfect circle, vertical /
It diffuses in an elliptical shape in either horizontal direction. That is, astigmatism occurs and the image is blurred.

Conventionally, in order to correct this astigmatism,
The beam shaping optical system 3 as described above was interposed.
However, the astigmatism is caused by the astigmatic difference (Ex ≠ Ey) in which the apparent laser light source position (beam waste position Ey, Ex) differs between the vertical direction and the horizontal direction, as described above.
Therefore, correction cannot be sufficiently performed only by the conventional beam shaping optical system 3 described above.

In the conventional beam shaping optical system 3, as shown in FIG. 9, the image plane position Py at which the vertical beam Ly diameter is minimum and the image plane position Lx at which the horizontal beam Lx diameter is minimum are determined. It was not possible to match them, and as a result, as shown in FIG. 10, it was not possible to avoid the occurrence of elephant blurring in one or both of the vertical and horizontal directions.

FIG. 10 shows a state of a light-converging pattern obtained by the apparatus shown in FIG. In the figure, (a) is a light-condensing pattern at an image plane position A where the diameter of the beam Ly in the vertical direction is minimum, and (b) is light condensing at an image plane position B where the diameter of the beam Lx in the horizontal direction is minimum. A pattern (c) shows a light converging pattern at an intermediate position C between the two image plane positions A and B, respectively.

As shown in FIG. 1, a vertical beam Ly
When the image plane position A is determined so as to minimize the diameter, the horizontal beam Lx is diffused at the image plane position A,
As shown in (a), an elliptical aberration appears in the light-collecting pattern. When the image plane position B is determined so that the beam Lx diameter in the horizontal direction is minimized, the beam Ly in the vertical direction is diffused at the image plane position B, and also in this case, As shown in (b), an elliptical aberration appears in the condensing pattern. When an attempt is made to obtain a perfect circular condensing pattern at an intermediate position C between both image plane positions A and B,
Since the diameters of both the vertical and horizontal beams Ly and Lx are not minimized, the beams Ly and Lx are not sufficiently narrowed down as shown in (c), which also causes so-called image blur.

As described above, in a semiconductor laser device that focuses a laser beam emitted from a semiconductor laser element on a surface to be irradiated in a spot-like manner, the beam waste position of the laser beam emitted from the laser element is vertically or horizontally. The present inventor has clarified that there is a problem that the astigmatism difference, which is unique to the semiconductor laser device, causes astigmatism which cannot be corrected only by the conventional beam shaping optical system.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and has a simple configuration and an adjusting operation to radiate a laser beam emitted from a semiconductor laser device having astigmatism in both vertical and horizontal directions. It is an object of the present invention to provide a semiconductor laser device capable of condensing light on the same image plane with a minimum beam diameter and a method of manufacturing the same.

[0016]

A first means of the present invention is as follows.
A semiconductor laser device that emits laser light with different beam waist positions in the horizontal direction parallel to the semiconductor bonding surface and in the direction perpendicular thereto, and radiates laser light from the laser device using a collimator lens and a condenser lens. A semiconductor laser device comprising: a condensing optical system that condenses a spot on a surface to be irradiated; and an adjusting unit that finely sets an interval between the laser element and the collimator lens.

A second means is the semiconductor laser device according to the first means, wherein the semiconductor laser element and the collimator lens are connected by a member capable of finely adjusting the length in the optical axis direction. According to a third aspect of the present invention, there is provided the semiconductor laser device according to the first or second means, further comprising a temperature compensating means for placing a member for determining a distance between the semiconductor laser element and the collimator lens under a predetermined constant temperature condition. .

The fourth means uses a semiconductor laser device which emits laser beams having different beam waist positions in a horizontal direction parallel to a semiconductor bonding surface and in a direction perpendicular thereto, and emits light from the semiconductor laser device. A method of manufacturing a semiconductor laser device that focuses a laser beam on a surface to be irradiated by using a collimator lens and a condensing lens, wherein a first condensing position that minimizes a converging beam diameter in a horizontal direction is provided. And a second step of, after the first step, finely adjusting the distance between the semiconductor laser element and the collimator lens to obtain a point at which the focused beam diameter in the vertical direction is minimized. This is a method for manufacturing a semiconductor laser device characterized by the following. Fifth means is a method of manufacturing a semiconductor laser device according to the fourth means, wherein after the first and second steps, a third step of fixing an interval between the semiconductor laser element and the collimator lens is performed. It is.

According to the above-described means, the minimum beam diameter position in the vertical direction can be matched with the minimum beam diameter position in the horizontal direction by finely setting the interval between the semiconductor laser element and the collimator lens. This achieves the object of condensing the laser beam emitted from the semiconductor laser device having astigmatism on the same image plane with a minimum beam diameter in both the vertical and horizontal directions with a simple configuration and adjusting operation. You.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings. In addition, between each figure,
The same reference numerals indicate the same or corresponding parts.

FIG. 1 shows an embodiment of a semiconductor laser device according to the present invention. The semiconductor laser device 10 shown in FIG.
First, a semiconductor laser device 1, a collimator lens 2, a beam shaping optical system 3, and a condenser lens 4 are arranged side by side in the optical axis Z direction.

The semiconductor laser element (LD) 1 is of a high output type and has a metal LD holding plate 11 having good thermal conductivity.
Mounted on. This holding plate 11 is fixed to a metal plate 13 via a Peltier element 12 for cooling. The metal plate 13 forms a structural member of the device, but also functions as a heat sink that absorbs and dissipates heat released from the Peltier device 12.

Although the Peltier element 12 is not shown,
Temperature near the semiconductor laser device 1 (for example, LD
A constant temperature system that keeps the operating environment temperature of the laser element 1 constant can also be configured by combining it with feedback control means that keeps the temperature of the holding plate 11 at a predetermined temperature.

The collimator lens 2 is a convex lens,
The laser beam (Ly, Lx) emitted from the laser element 1 is converted into a parallel beam. The collimator lens 2 is held by a metal lens holder 21 having good thermal conductivity, and the lens holder 21 is connected to the LD holding plate 11 via a fine adjustment jig 22.
It is connected to.

The fine adjustment jig 22 allows the laser element 1
And the collimator lens 2 are mechanically connected while maintaining a predetermined distance L1. The fine adjustment jig 22 forms, for example, a screw feed mechanism using fine-pitch screws, and serves as adjusting means for variably setting the interval L1 between the laser element 1 and the collimator lens 2 with an accuracy of μm unit (0 to 40 μm). An error due to thermal expansion is interposed in the fine adjustment jig 22, and this error can be reduced by, for example, suppressing the temperature rise of the laser element 1 by the Peltier element 12.

Although not shown, the beam shaping optical system 3 is constituted by using a plane-parallel plate, a cylindrical lens, an anamorphic prism, or the like.
The astigmatism of the laser beam (Ly, Lx) converted into a parallel beam is supplementarily corrected.

The condensing lens 4 is a convex lens, and converges the laser beam converted into a parallel beam into a spot-like spot. Fp
Is an image plane position (irradiated surface position) that receives the laser light focused by the spot. This image plane position Fp is
Is selected such that the beam diameter is minimized.

However, in the above-described semiconductor laser device 10, due to the astigmatism of the semiconductor laser element 1, the apparent light source position (beam waste position) in the horizontal direction parallel to the semiconductor bonding surface and in the direction perpendicular thereto. ) Are different. Therefore, even if the image plane position Fp is moved in the direction of the optical axis Z, as described above, the position where the diameter of the beam Ly in the vertical direction becomes the minimum and the position where the diameter of the beam Lx in the horizontal direction becomes the minimum do not necessarily match. And the mismatch causes astigmatism. Astigmatism due to the astigmatism cannot be corrected only by the beam shaping optical system 3 as described above.

Here, the present inventor has found that in the above-described semiconductor laser device, when the distance L1 between the laser element 1 and the collimator lens 2 is changed in units of μm, the focal position at which the beam Ly diameter in the vertical direction becomes minimum is obtained. And that the focus position where the horizontal beam Lx diameter is the minimum behaves differently from each other.

That is, the distance L1 between the laser element 1 and the collimator lens 2 is set to 0, 1 as shown in FIG.
When the beam diameter is changed stepwise such as 0 μm, 20 μm, 30 μm, and 40 μm, the focal position where the diameter of the beam Ly in the vertical direction becomes minimum greatly changes in millimeter (mm) units, but the beam diameter Lx in the horizontal direction is changed. It has been found that the focal position where is minimum does not show much noticeable change.

Further, the present inventor changes the focal position where the diameter Ly of the beam in the vertical direction becomes minimum by changing the distance L1 between the laser element 1 and the collimator lens 2 in units of μm. Can be brought to the focal position where the beam Lx diameter in the horizontal direction is minimum.

FIG. 2 is a graph showing the change of the minimum beam diameter position for each of the vertical and horizontal directions. The horizontal axis indicates the beam diameter measurement position (unit: mm), and the vertical axis indicates the beam diameter (μm). . In the figure, the change state of the beam diameter with respect to the measurement position is determined by setting the distance L1 between the semiconductor laser element 1 and the collimator lens 2 to an increment Lc (unit μ
m) (L1 = Lo + Lc), and while gradually increasing the increment Lc to 0, 10, 20, 30, 40, each increment Lc (= 0, 10, 20, 30, 4, 4)
For each 0), the state of change of the beam diameter with respect to the beam diameter measurement position was examined.

As a result, as shown in the figure, the minimum beam diameter position in the vertical direction is changed to the millimeter (m
m), but the minimum beam diameter position in the horizontal direction hardly changes with respect to the change in Lc.
Thus, by variably setting Lc, it is possible to bring the minimum beam diameter position in the vertical direction to the minimum beam diameter position in the horizontal direction.

In the example shown in FIG. 2, when Lc = 20 μm, the minimum beam diameter position in the vertical direction overlaps with the minimum beam diameter position in the horizontal direction. At this overlapping point C, the beam diameter becomes minimum in both the vertical and horizontal directions.

FIG. 3 shows a condensing pattern when the minimum beam diameter positions in both the vertical and horizontal directions match. In the same figure, (c) shows a light-converging pattern at a position A where the beam diameter is minimum in both the vertical and horizontal directions. (A)
(B) shows the light converging pattern at the rear position A and the front position B, respectively. As shown in the figure, the light-condensing pattern is condensed in a spot in a state where the light-condensing pattern is corrected to a perfect circular shape which is not deviated to both vertical and horizontal directions.

The present invention has been made with a focus on the above-described knowledge. As shown in FIG.
When the emitted laser light from the laser beam is spot-condensed on the surface to be irradiated using the collimator lens 2 and the condenser lens 4, the distance L1 (L1) between the laser element 1 and the collimator lens 2
1 = Lo + Lc), the focus position at which the beam Ly diameter in the vertical direction becomes minimum and the focus position at which the beam Lx diameter in the horizontal direction becomes minimum can be matched with each other. It was made.

Thus, the laser beam emitted from the semiconductor laser device having astigmatism is condensed on the same image plane with a minimum beam diameter in both the vertical and horizontal directions by a simple configuration and adjusting operation. A semiconductor laser device can be obtained.

Next, a method for manufacturing a semiconductor laser device according to the present invention will be described. As described above, the semiconductor laser device according to the present invention uses a semiconductor laser element that emits laser light having different beam waist positions in the horizontal direction parallel to the semiconductor bonding surface and in the direction perpendicular thereto. The laser beam emitted from the device is spot-condensed on the surface to be irradiated using a collimator lens and a condensing lens. This device is a semiconductor laser device with an astigmatic difference through the following steps. With a simple configuration and adjusting operation, the laser beam emitted from the laser beam can be focused on the same image plane with the minimum beam diameter in both the vertical and horizontal directions.

FIG. 4 shows a main process scene of the semiconductor laser device manufacturing method according to the present invention. First, as shown in FIG. 3A, a first step of determining a position Px at which the focused beam diameter in the horizontal direction is minimum is performed. This step is performed by changing the distance L2 between the condenser lens 4 and the beam diameter measuring device 7. Specifically, by moving the measurement surface of the measurement device 7 in the optical axis Z direction, the position Px where the focused beam diameter in the horizontal direction is minimum can be determined.

After the first step, as shown in FIG. 2B, as a second step, the distance L1 (= Lo + Lc) between the laser element 1 and the collimator lens 2 is finely adjusted to thereby provide a vertical position. The minimum beam diameter position Py in the horizontal direction is moved to match the minimum beam diameter position Px in the horizontal direction.
Thereby, the minimum beam diameter positions Py and Px in both the vertical and horizontal directions can be brought to the same image plane.

Thereafter, if necessary, a third step of fixing the distance between the laser element 1 and the collimator lens 2 with an adhesive or spot welding is performed. As a result, the distance between the laser element and the collimator lens can be fixed at the optimum adjustment state, and the state can be maintained permanently. This third step can be easily performed using, for example, an adhesive.

As described above, the distance between the laser element 1 and the collimator lens 2 can be optimized by fine adjustment at the manufacturing stage. It may be finely adjusted when incorporated in application equipment such as. Further, as a structural form for connecting the laser element 1 and the collimator lens 2 with the fine adjustment jig 22, for example, a form as shown in FIG. 5 or FIG. 6 may be used.

FIG. 5 shows another embodiment of the main part of the semiconductor laser device according to the present invention. FIG. 1 shows a connection configuration of a semiconductor laser element 1 and a collimator lens 2. Differences from those shown in FIG. 1 will be described.
A metal lens holder 21 holding the collimator lens 2 is connected to the metal plate 13 by a fine adjustment jig 22.

By finely adjusting the distance between the metal plate 13 and the lens holder 21 with the fine adjustment jig 22, the distance between the laser element 1 and the collimator 21 can be set in μm units (0 to 40 μm).
Can be variably set.

FIG. 6 shows still another embodiment of the main part of the semiconductor laser device according to the present invention. In the semiconductor laser device 10 shown in FIG.
And the distance between the support 23 and the metal plate 13 is variably set by the fine adjustment jig 22.

As described above, the fine adjustment jig 22 can finely set the interval between the laser element 1 and the collimator lens 2 with an accuracy of a unit of μm, and changes the once set state to aging or temperature change. It is desired to be able to stably hold without being affected. For this purpose, an alloy (for example, Constant or Permalloy) having a small coefficient of thermal expansion is used as the material of the fine adjustment jig 22, or the fine adjustment jig 22 is subjected to a predetermined constant temperature condition as described below. Use temperature compensation means for placing.

FIG. 7 shows an embodiment of a semiconductor laser device provided with a temperature compensating means. The semiconductor laser device shown in the figure has a temperature compensation circuit 6 including a temperature sensor 61, a temperature detection circuit 62, a feedback control circuit 63, a temperature setting means 64 and the like.

In this case, the temperature sensor 61 is
1 for detecting the ambient temperature of the semiconductor laser device 1. The temperature detection circuit 62 includes the temperature sensor 6
An electric signal of a level corresponding to the detected temperature of No. 1 is output.
The feedback control circuit 63 performs feedback control (negative feedback) on the drive current of the laser element 1 and / or the Peltier element 12 so that the electric signal level corresponding to the temperature becomes a predetermined set level given from the temperature setting means 64. Control.

Thus, the ambient temperature of the laser element 1 is feedback-controlled to a predetermined temperature corresponding to the set level. With this control, the temperature in the fine adjustment jig 22 is also stabilized at a constant temperature, and the state of setting the distance between the laser element 1 and the collimator lens 2 can be stably maintained.

FIG. 8 shows another embodiment of the semiconductor laser device provided with the temperature compensating means. The semiconductor laser device shown in the figure is provided so that the above-mentioned temperature compensation circuit 6 directly controls the temperature of the fine adjustment jig 22 by feedback.
That is, the temperature sensor 61 is attached so as to directly detect the temperature of the fine adjustment jig 22, and the fine adjustment jig 2 is set so that the detected temperature becomes the temperature set by the setting means 64.
The amount of power supply to the heater 24 for heating the heater 2 is feedback-controlled.

As a result, the fine adjustment jig 22 is placed under more reliable constant temperature conditions. Therefore, the state of setting the distance between the laser element 1 and the collimator lens 2 can be maintained with higher precision and stability. Note that the temperature compensating circuit 6 shown in FIG. 7 and the temperature compensating circuit 6 shown in FIG.

In the semiconductor laser device shown in FIG. 8, the temperature compensation circuit 6 can be used as means for finely adjusting the length of the fine adjustment jig 22. That is, the temperature of the fine adjustment jig 22 is variably set by variably operating the set temperature of the setting means 64. Then, the fine adjustment jig 22 thermally expands according to the set temperature. By the change in length due to this thermal expansion, the distance between the laser element 1 and the collimator lens 2 can be finely adjusted with an accuracy of μm.

As described above, the first aspect of the present invention is to provide a semiconductor laser device that emits laser beams having different beam waist positions in a horizontal direction parallel to a semiconductor bonding surface and in a direction perpendicular thereto. A converging optical system that converges a laser beam emitted from the laser element onto a surface to be irradiated using a collimator lens and a converging lens; and an adjusting unit that finely sets an interval between the laser element and the collimator lens. A semiconductor laser device. Thus, the laser beam emitted from the semiconductor laser device having astigmatism can be focused on the same image plane with a minimum beam diameter in both the vertical and horizontal directions by a simple configuration and adjustment operation.

A second invention is a semiconductor laser device according to the first invention, wherein the semiconductor laser element and the collimator lens are connected by a member whose length in the optical axis direction can be finely adjusted. Thereby, it is possible to constitute an adjusting means for finely setting the interval between the semiconductor laser element and the collimator lens.

A third aspect of the present invention is the semiconductor laser according to the first or second aspect, further comprising temperature compensating means for setting a member for determining a distance between the semiconductor laser element and the collimator lens under a predetermined constant temperature condition. Device. Thereby, an error due to thermal expansion can be corrected under local constant temperature conditions.

According to a fourth aspect of the present invention, there is provided a semiconductor laser device which emits laser beams having different beam waist positions in a horizontal direction parallel to a bonding surface of a semiconductor and a direction perpendicular thereto, and emits light from the semiconductor laser device. A method of manufacturing a semiconductor laser device that focuses a laser beam on a surface to be irradiated by using a collimator lens and a condensing lens, wherein a first condensing position that minimizes a converging beam diameter in a horizontal direction is provided. And a second step of, after the first step, finely adjusting the distance between the semiconductor laser element and the collimator lens to obtain a point at which the focused beam diameter in the vertical direction is minimized. This is a method for manufacturing a semiconductor laser device characterized by the following. Thus, the minimum beam diameter position in both the vertical and horizontal directions can be brought to the same image plane.

The fifth means is the fourth means, wherein the first
And a third step of fixing a distance between the semiconductor laser element and the collimator lens after the second step. This allows
The distance between the laser element and the collimator lens can be fixed at an optimum state, and that state can be maintained permanently.

[0058]

As is apparent from the above description, the present invention is applicable to a case where a laser beam emitted from a semiconductor laser device having astigmatism is focused on a surface to be irradiated using a collimator lens and a condenser lens. , The distance between the laser element and the collimator lens can be fine-tuned,
To obtain a semiconductor laser device capable of converging a laser beam emitted from a semiconductor laser element having astigmatism on a single image plane with a minimum beam diameter in both vertical and horizontal directions with a simple configuration and adjusting operation. Can be.

[Brief description of the drawings]

FIG. 1 is a diagram showing one embodiment of a semiconductor laser device according to the present invention.

FIG. 2 is a graph showing a change state of a minimum beam diameter position in vertical / horizontal directions.

FIG. 3 is a diagram showing a light-converging pattern when minimum beam diameter positions in both vertical and horizontal directions match.

FIG. 4 is a view showing main process scenes of the semiconductor laser device manufacturing method according to the present invention.

FIG. 5 is a diagram showing another embodiment of a main part of the semiconductor laser device according to the present invention.

FIG. 6 is a schematic diagram showing yet another embodiment of a main part of a semiconductor laser device according to the present invention.

FIG. 7 is a diagram showing an embodiment of a semiconductor laser device provided with a temperature compensating means.

FIG. 8 is a diagram showing another embodiment of a semiconductor laser device provided with a temperature compensating means.

FIG. 9 is a diagram showing a schematic configuration of a conventional semiconductor laser device.

FIG. 10 is a diagram showing a state of a light-converging pattern obtained by the apparatus of FIG.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 high-power semiconductor laser element (LD) 10 semiconductor laser device 11 LD holding plate 12 Peltier element 13 metal plate 2 collimator lens 21 lens holder 22 fine adjustment jig serving as adjustment means 23 support 24 heater 3 beam shaping optical system 4 Condensing lens 5 Support 6 Temperature compensation circuit 61 Temperature sensor 62 Temperature detection circuit 63 Feedback control circuit 64 Temperature setting means 7 Beam diameter measuring device Z Optical axis Ey Beam waste position (vertical direction) Ex Beam waste position (horizontal direction) Ly Light beam spreading in the vertical direction Lx Light beam spreading in the horizontal direction Py Minimum beam diameter position (vertical direction) Px Minimum beam diameter position (horizontal direction) L1 Distance between laser element and collimator lens L2 Focusing lens and beam diameter measuring device (image Plane) interval Fp Image plane position

Claims (5)

[Claims] 1. A semiconductor laser device that emits laser light having different beam waist positions in a horizontal direction parallel to a semiconductor bonding surface and in a direction perpendicular thereto, and collects a laser beam emitted from the laser device with a collimator lens. A semiconductor laser device comprising: a condensing optical system for condensing a spot on a surface to be irradiated using an optical lens; and adjusting means for finely setting an interval between the laser element and the collimator lens. 2. The semiconductor laser device according to claim 1, wherein the semiconductor laser element and the collimator lens are connected by a member capable of finely adjusting the length in the optical axis direction. 3. The semiconductor laser device according to claim 1, further comprising temperature compensating means for setting a member for determining a distance between the semiconductor laser element and the collimator lens under a predetermined constant temperature condition. 4. A semiconductor laser device which emits laser beams having different beam waist positions in a horizontal direction parallel to a semiconductor bonding surface and in a direction perpendicular thereto, and radiates laser light from the semiconductor laser device to a collimator. A method of manufacturing a semiconductor laser device that focuses a spot on an irradiated surface using a lens and a focusing lens, comprising: a first step of determining a focusing position at which a focused beam diameter in a horizontal direction is minimized; After the first step, a second step of finely adjusting the distance between the semiconductor laser element and the collimator lens to obtain a point at which the focused beam diameter in the vertical direction is minimized is performed. A method for manufacturing a laser device. 5. The method of manufacturing a semiconductor laser device according to claim 4, wherein after the first and second steps, a third step of fixing an interval between the semiconductor laser element and the collimator lens is performed.