JP2001140084A - Etching solution for nickel or nickel alloy - Google Patents
Etching solution for nickel or nickel alloyInfo
- Publication number
- JP2001140084A JP2001140084A JP2000122946A JP2000122946A JP2001140084A JP 2001140084 A JP2001140084 A JP 2001140084A JP 2000122946 A JP2000122946 A JP 2000122946A JP 2000122946 A JP2000122946 A JP 2000122946A JP 2001140084 A JP2001140084 A JP 2001140084A
- Authority
- JP
- Japan
- Prior art keywords
- nickel
- etching
- copper
- etching solution
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/28—Acidic compositions for etching iron group metals
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/067—Etchants
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Weting (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、ニッケルまたはニ
ッケル合金とそれら以外の金属が共存する複合材料から
ニッケルまたはニッケル合金をを選択的にエッチングす
ることのできるエッチング液に関する。本発明のエッチ
ング液は、特に半導体製品、プリント配線板などの電子
部品の製造において有用である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an etching solution capable of selectively etching nickel or a nickel alloy from a composite material in which nickel or a nickel alloy and other metals coexist. The etching solution of the present invention is particularly useful in the production of electronic parts such as semiconductor products and printed wiring boards.
【0002】[0002]
【従来の技術】TAB用フレキシブル基板やBGAパッ
ケージ用基板を含むプリント配線板の電極や配線、半導
体製品の電極などの製造においては、電気めっきや無電
解めっきによってニッケル皮膜を形成する工程がある。
このとき、不要な部分に形成されたニッケル皮膜は、エ
ッチング液によって剥離される。前記電極や配線は複数
の金属からなるため、ニッケル皮膜を剥離する際には、
ニッケル以外の金属を浸食しないことが要求される。例
えばセミアディティブ法によるプリント配線板の製造に
おいては、ガラス布エポキシ樹脂含浸板、ポリイミドフ
ィルムなどの絶縁基材上に無電解ニッケルめっきやニッ
ケル蒸着をした後、めっきレジストで回路の逆パターン
を形成し、つぎに電気銅めっきしてニッケル上に銅回路
を形成し、つぎにめっきレジスト剥離し、その後露出し
たニッケルが剥離される。この場合に使用されるニッケ
ルエッチング液には、銅回路を侵食しないことが要求さ
れる。2. Description of the Related Art In the manufacture of electrodes and wiring of printed wiring boards including flexible substrates for TAB and BGA package, electrodes of semiconductor products, etc., there is a step of forming a nickel film by electroplating or electroless plating.
At this time, the nickel film formed on the unnecessary portion is peeled off by the etchant. Since the electrodes and wires are made of a plurality of metals, when peeling off the nickel film,
It is required not to erode metals other than nickel. For example, in the manufacture of printed wiring boards by the semi-additive method, after performing electroless nickel plating or nickel vapor deposition on an insulating substrate such as a glass cloth epoxy resin impregnated plate or a polyimide film, a reverse pattern of a circuit is formed with a plating resist. Next, a copper circuit is formed on the nickel by electrolytic copper plating, and then the plating resist is stripped, and then the exposed nickel is stripped. The nickel etchant used in this case is required not to attack the copper circuit.
【0003】銅を侵食しないでニッケルを剥離するエッ
チング液としては、特開平6−57454号公報に、硝
酸、過酸化水素を含む酸性溶液に、添加剤としてカルボ
キシル基を含む有機酸と−NH−または=N−の形でチ
ッ素原子を含む複素環式化合物を含有させた水溶液から
なるエッチング液が開示されている。また特開平9−2
28075号公報には、ハロゲンイオンを含まない酸、
過酸化水素などの酸化剤、芳香族ニトロ化合物、有機染
料やアゾールなどの金属溶解抑制剤を含む水溶液からな
るエッチング液が開示されている。As an etchant for stripping nickel without eroding copper, JP-A-6-57454 discloses an acid solution containing nitric acid and hydrogen peroxide, an organic acid containing a carboxyl group as an additive, and -NH-. Alternatively, an etchant comprising an aqueous solution containing a heterocyclic compound containing a nitrogen atom in the form of = N- is disclosed. Japanese Patent Application Laid-Open No. 9-2
No. 28075 discloses an acid containing no halogen ion,
An etchant comprising an aqueous solution containing an oxidizing agent such as hydrogen peroxide, an aromatic nitro compound, a metal dissolution inhibitor such as an organic dye or an azole is disclosed.
【0004】[0004]
【発明が解決しようとする課題】しかしながら、これら
のエッチング液であっても銅の浸食の抑制が充分ではな
く、市場では銅の侵食がさらに抑制されたニッケルエッ
チング液が要望されている。したがって本発明は、従来
の技術の欠点を克服し、ニッケルまたはニッケル合金の
エッチング速度が速く、かつそれら以外の金属、特に銅
や銅合金の浸食がきわめて少ないニッケルまたはニッケ
ル合金のエッチング液を提供することを目的とする。更
に、本発明は、サイドエッチング(銅の下になっている
部分のニッケルの溶解)がほとんど生じないニッケルま
たはニッケル合金のエッチング液を提供することを目的
とする。However, even with these etchants, the suppression of copper erosion is not sufficient, and there is a demand in the market for a nickel etchant which further suppresses copper erosion. Accordingly, the present invention overcomes the drawbacks of the prior art and provides an etching solution for nickel or nickel alloy in which the etching rate of nickel or nickel alloy is high and the erosion of other metals, particularly copper or copper alloy, is extremely small. The purpose is to: It is a further object of the present invention to provide a nickel or nickel alloy etchant that hardly causes side etching (dissolution of nickel under copper).
【0005】[0005]
【課題を解決するための手段】本発明者らは、鋭意検討
の結果、下記の構成により上記従来技術の欠点を克服す
るに至った。本発明は、ニッケルまたはニッケル合金の
エッチング速度が速く、かつそれら以外の金属、特に銅
や銅合金の浸食がきわめて少ないニッケルまたはニッケ
ル合金のエッチング液を得るためになされたものであ
り、(A)硝酸5〜55%(重量%、以下同様)、
(B)硫酸0.5〜40%、(C)過酸化物、硝酸塩お
よび芳香族ニトロ化合物から選ばれた主酸化剤0.1〜
20%ならびに(D)塩素イオン0.0001〜0.5
%を含有する水溶液からなるニッケルまたはニッケル合
金のエッチング液に関する。また、前記水溶液がさらに
ピリジン誘導体0.01〜6%を含有する水溶液である
ニッケルまたはニッケル合金のエッチング液に関する。Means for Solving the Problems As a result of intensive studies, the present inventors have overcome the above-mentioned disadvantages of the prior art by the following constitution. The present invention has been made to obtain an etching solution for nickel or a nickel alloy in which the etching rate of nickel or a nickel alloy is high and the erosion of other metals, particularly copper or a copper alloy, is extremely small. Nitric acid 5-55% (% by weight, the same applies hereinafter),
(B) 0.5 to 40% of sulfuric acid, (C) 0.1 to 0.1 of a main oxidizing agent selected from peroxides, nitrates and aromatic nitro compounds.
20% and (D) chloride ion 0.0001 to 0.5
% Of an aqueous solution containing nickel or nickel alloy. The present invention also relates to an etching solution for nickel or a nickel alloy, wherein the aqueous solution further contains 0.01 to 6% of a pyridine derivative.
【0006】[0006]
【発明の実施の形態】以下に本発明について詳細に説明
する。本発明のエッチング液における硝酸は、主酸化剤
によって酸化されたニッケルを溶解させる成分である。
また補助酸化剤としてもニッケルの酸化を促進する作用
も有する。硝酸の濃度は5〜55%、好ましくは10〜
40%、さらに好ましくは20〜30%である。前記濃
度が5%未満ではニッケルのエッチング速度が遅くな
り、55%を超えるとニッケルが不動態化してエッチン
グできなくなるおそれが生じる。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail. Nitric acid in the etching solution of the present invention is a component that dissolves nickel oxidized by the main oxidizing agent.
It also has the effect of promoting the oxidation of nickel as an auxiliary oxidant. The concentration of nitric acid is 5 to 55%, preferably 10 to
It is 40%, more preferably 20 to 30%. If the concentration is less than 5%, the etching rate of nickel becomes slow, and if it exceeds 55%, nickel may be passivated and cannot be etched.
【0007】本発明においては、酸化されたニッケルを
溶解するために硝酸とともに硫酸が併用される。このよ
うに硝酸と硫酸が併用されるため、硫酸を併用しない場
合に比べてニッケルのエッチング速度が速くなる。硫酸
の濃度は0.5〜40%、好ましくは0.1〜10%、
さらに好ましくは1〜5%である。前記濃度が0.5%
未満ではニッケルのエッチング速度をあげる効果が不充
分であり、40%を超えるとニッケルが不動態化してエ
ッチングできなくなるおそれが生じる。In the present invention, sulfuric acid is used together with nitric acid to dissolve oxidized nickel. Since nitric acid and sulfuric acid are used together in this way, the etching rate of nickel is higher than in the case where sulfuric acid is not used together. The concentration of sulfuric acid is 0.5-40%, preferably 0.1-10%,
More preferably, it is 1 to 5%. The concentration is 0.5%
If the amount is less than 40%, the effect of increasing the etching rate of nickel is insufficient. If the amount exceeds 40%, nickel may be passivated and may not be etched.
【0008】本発明のエッチング剤に用いられる主酸化
剤は、ニッケルを酸化する成分であり、過酸化物、硝酸
塩および芳香族ニトロ化合物のうちの少なくとも1種が
用いられる。前記過酸化物としては、例えば過酸化水
素、過酸化ナトリウム、過酸化バリウム、過酸化ベンゾ
イルなどがあげられる。前記硝酸塩としては、例えば硝
酸アンモニウム、硝酸ナトリウム、硝酸カリウム、硝酸
鉄、硝酸ニッケルなどがあげられる。前記芳香族ニトロ
化合物としては、例えばニトロベンゼンスルホン酸、ニ
トロ安息香酸、ニトロアニリン、ニトロフェノール、そ
れらの塩などがあげられる。塩としては、例えばニトロ
ベンゼンスルホン酸ナトリウム、ニトロ安息香酸ナトリ
ウムなどがあげられる。[0008] The main oxidizing agent used in the etching agent of the present invention is a component that oxidizes nickel, and at least one of peroxide, nitrate and aromatic nitro compound is used. Examples of the peroxide include hydrogen peroxide, sodium peroxide, barium peroxide, benzoyl peroxide and the like. Examples of the nitrate include ammonium nitrate, sodium nitrate, potassium nitrate, iron nitrate and nickel nitrate. Examples of the aromatic nitro compound include nitrobenzenesulfonic acid, nitrobenzoic acid, nitroaniline, nitrophenol, and salts thereof. Examples of the salt include sodium nitrobenzenesulfonate and sodium nitrobenzoate.
【0009】主酸化剤の濃度は0.1〜20%、好まし
くは0.1〜5%、さらに好ましくは0.5〜2%であ
る。前記濃度が0.1%未満では酸化力が不充分でニッ
ケルのエッチング速度が遅くなり、20%を超えると銅
などの侵食が大きくなる。[0009] The concentration of the main oxidizing agent is 0.1-20%, preferably 0.1-5%, more preferably 0.5-2%. If the concentration is less than 0.1%, the oxidizing power is insufficient and the etching rate of nickel becomes slow, and if it exceeds 20%, erosion of copper and the like becomes large.
【0010】本発明のエッチング液に用いられる塩素イ
オンは、銅などの溶解を抑制する成分である。前記塩素
イオンは、例えば塩酸や、塩酸アニリン、塩酸グアニジ
ン、塩酸エチルアミン等の塩酸塩、塩化アンモニウム、
塩化ナトリウム、塩化亜鉛、塩化第二鉄、塩化第二銅、
塩化ニッケルなど塩化物などとして添加するのが好まし
い。前記塩素イオンの濃度は0.0001〜0.5%、
好ましくは0.0001〜0.001%、さらに好まし
くは0.0001〜0.005%である。前記濃度が
0.0001%未満では銅などの侵食が大きくなり、
0.5%を超えるとニッケルのエッチング速度が遅くな
る。[0010] Chlorine ions used in the etching solution of the present invention are components that suppress the dissolution of copper and the like. The chloride ion is, for example, hydrochloric acid, aniline hydrochloride, guanidine hydrochloride, hydrochloride such as ethylamine hydrochloride, ammonium chloride,
Sodium chloride, zinc chloride, ferric chloride, cupric chloride,
It is preferably added as a chloride such as nickel chloride. The concentration of the chloride ion is 0.0001 to 0.5%,
Preferably it is 0.0001-0.001%, More preferably, it is 0.0001-0.005%. When the concentration is less than 0.0001%, erosion of copper and the like becomes large,
If it exceeds 0.5%, the etching rate of nickel decreases.
【0011】また、本発明のエッチング剤をパターンエ
ッチングに用いる場合は、サイドエッチングを防止する
ためにピリジン化合物を添加するのが好ましい。例えば
セミアディティブ法によるプリント配線板の製造におい
て、下地のめっきとして無電解ニッケルめっきなどを行
ない、電気銅めっきによる回路形成後にニッケルをエッ
チングする場合、ピリジン化合物を添加した本発明のエ
ッチング液を用いると、サイドエッチング(銅の下にな
っている部分のニッケルの溶解)がほとんど生じない。When the etching agent of the present invention is used for pattern etching, it is preferable to add a pyridine compound to prevent side etching. For example, in the manufacture of a printed wiring board by a semi-additive method, when performing electroless nickel plating or the like as a base plating and etching nickel after forming a circuit by electrolytic copper plating, using an etching solution of the present invention to which a pyridine compound is added is used. In addition, side etching (dissolution of nickel under copper) hardly occurs.
【0012】前記ピリジン化合物とは、ピリジンおよび
その水素原子がハロゲン原子、アミノ基、水酸基、アル
キル基、アリールアルキル基、ビニル基、ベンゾイル基
などの置換基で置換された化合物であり、その具体例と
してはピリジン、2−クロロピリジン、2−ブロモピリ
ジン、3−フルオロピリジン、2,6,−ジクロロピリ
ジン、2−アミノピリジン、2,3−ジアミノピリジ
ン、3−ヒドロキシピリジン、2,4,−ジメチルピリ
ジン、2,4,6−トリメチルピリジン、2−ヒドロキ
シメチルピリジン、2−(2−ヒドロキシジエチル)ピ
リジン、2−ビニルピリジン、2−ビニルピリジン、4
−(3−フェニルプロピル)ピリジン、4−ベンゾイル
ピリジンなどがあげられる。The pyridine compound is a compound in which pyridine and its hydrogen atom are substituted by substituents such as a halogen atom, an amino group, a hydroxyl group, an alkyl group, an arylalkyl group, a vinyl group and a benzoyl group. Include pyridine, 2-chloropyridine, 2-bromopyridine, 3-fluoropyridine, 2,6-dichloropyridine, 2-aminopyridine, 2,3-diaminopyridine, 3-hydroxypyridine, 2,4, -dimethyl Pyridine, 2,4,6-trimethylpyridine, 2-hydroxymethylpyridine, 2- (2-hydroxydiethyl) pyridine, 2-vinylpyridine, 2-vinylpyridine,
-(3-phenylpropyl) pyridine, 4-benzoylpyridine and the like.
【0013】前記ピリジン化合物の濃度は0.01〜6
%、好ましくは0.1〜3%、さらに好ましくは0.1
〜1%である。前記濃度が0.01%未満ではサイドエ
ッチングを抑制する効果が少なく、一方6%を超えても
添加量の増加に見合う効果の増大はみられない。The concentration of the pyridine compound is 0.01 to 6
%, Preferably 0.1 to 3%, more preferably 0.1%
~ 1%. If the concentration is less than 0.01%, the effect of suppressing the side etching is small, while if it exceeds 6%, the effect corresponding to the increase in the added amount is not increased.
【0014】本発明のニッケルエッチング液には、必要
に応じて前記の成分以外の成分を添加してもよい。たと
えばニッケルの溶解を促進するために、臭素イオン、ヨ
ウ素イオンなどのハライドイオンを添加してもよく、被
処理材料に対する濡れ性を向上させるために非イオン系
界面活性剤や水溶性溶剤を添加してもよい。Components other than the above-mentioned components may be added to the nickel etching solution of the present invention, if necessary. For example, halide ions such as bromide ions and iodine ions may be added to promote the dissolution of nickel, and a nonionic surfactant or a water-soluble solvent may be added to improve wettability to the material to be treated. You may.
【0015】本発明のエッチング液は、前記成分を水、
好ましくはイオン交換水とともに混合、攪拌することに
より容易に調製しうる。[0015] The etching solution of the present invention comprises the above component as water,
Preferably, it can be easily prepared by mixing and stirring with ion-exchanged water.
【0016】本発明のエッチング液の使用方法に特に限
定はないが、エッチング液中に被処理材を浸漬する方
法、エッチング液をスプレーする方法などがあげられ
る。また、エッチング液と被処理材との接触時間や液温
等は、被処理材の種類、エッチングされるニッケルの厚
さなどにより適宜選択される。The method of using the etching solution of the present invention is not particularly limited, and examples thereof include a method of immersing a material to be processed in the etching solution and a method of spraying the etching solution. The contact time between the etching solution and the material to be processed, the liquid temperature, and the like are appropriately selected depending on the type of the material to be processed, the thickness of nickel to be etched, and the like.
【0017】[0017]
【実施例】実施例1〜7および比較例1〜4 表1および表2に示す成分を混合し、エッチング液を調
製した。得られた液のニッケルエッチング速度および銅
浸食速度を下記のようにして調べ、また銅表面の変色の
有無を目視観察した。結果を表1および表2に示す。EXAMPLES Examples 1 to 7 and Comparative Examples 1 to 4 The components shown in Tables 1 and 2 were mixed to prepare an etching solution. The nickel etching rate and the copper erosion rate of the obtained liquid were examined as described below, and the copper surface was visually observed for discoloration. The results are shown in Tables 1 and 2.
【0018】(ニッケルエッチング速度の測定)40m
m×40mm×0.3mmのニッケル板(比重8.84
5)を、25℃のエッチング液中に3分間静置したのち
取り出し、ニッケル板の重量変化から下記式によりエッ
チング速度を算出した。(Measurement of nickel etching rate) 40 m
mx 40 mm x 0.3 mm nickel plate (specific gravity 8.84
5) was left standing in an etching solution at 25 ° C. for 3 minutes and then taken out, and the etching rate was calculated from the change in the weight of the nickel plate by the following equation.
【0019】[0019]
【数1】 (Equation 1)
【0020】(銅侵食速度の測定)40mm×40mm
×0.3mmの銅板(比重8.92)を、25℃のエッ
チング液中に3分間静置したのち取り出し、銅板の重量
変化から下記式により侵食速度を算出した。(Measurement of copper erosion rate) 40 mm × 40 mm
A copper plate having a size of 0.3 mm (specific gravity: 8.92) was allowed to stand in an etching solution at 25 ° C. for 3 minutes, and then taken out. From the weight change of the copper plate, the erosion rate was calculated by the following equation.
【0021】[0021]
【数2】 (Equation 2)
【0022】[0022]
【表1】 [Table 1]
【0023】[0023]
【表2】 [Table 2]
【0024】表1および表2に示されるように、本発明
のエッチング液はニッケルのエッチング速度が速く、し
かも銅の侵食がごくわずかであり、銅の外観に変化を生
じさせなかった。これに対し、硝酸濃度が本発明のエッ
チング液よりも低い場合(比較例1)はニッケルのエッ
チング速度が遅く、また硝酸濃度が高い場合(比較例
2)はニッケルが不動態化してほとんど剥離できなかっ
た。さらに塩素イオンがない場合(比較例3および4)
は、ニッケルのエッチング速度は速いが、銅の侵食が大
きかった。As shown in Tables 1 and 2, the etching solution of the present invention had a high nickel etching rate, had very little copper erosion, and did not change the appearance of copper. On the other hand, when the nitric acid concentration is lower than the etching solution of the present invention (Comparative Example 1), the nickel etching rate is low, and when the nitric acid concentration is high (Comparative Example 2), nickel is passivated and almost no peeling is possible. Did not. When there is no further chloride ion (Comparative Examples 3 and 4)
In this case, the etching rate of nickel was high, but the erosion of copper was large.
【0025】実施例8〜11 表3に示す成分を混合し、エッチング液を調製した。得
られた液のニッケルエッチング速度、銅浸食速度および
銅表面の変色の有無を実施例1と同様に調べた。結果を
表3に示す。また、ポリイミド基材上に無電解ニッケル
めっきして厚さ0.5μmのめっき膜を形成したのち、
めっきレジストで回路の逆パターンを形成し、ついで電
気銅めっきして銅の回路を形成した。つぎに、めっきレ
ジストを剥離し、試験基板を作製した。えられた試験基
板を25℃のエッチング液中に5分間浸漬した後取り出
し、切断して断面を400倍の顕微鏡により観察し、銅
パターン下のニッケルのサイドエッチングを調べた。結
果を表3に示す。Examples 8 to 11 The components shown in Table 3 were mixed to prepare an etching solution. The nickel etching rate, the copper erosion rate, and the presence or absence of discoloration on the copper surface of the obtained liquid were examined in the same manner as in Example 1. Table 3 shows the results. Also, after forming a 0.5 μm thick plating film by electroless nickel plating on a polyimide substrate,
A reverse pattern of the circuit was formed using a plating resist, and then copper electroplating was performed to form a copper circuit. Next, the plating resist was peeled off to prepare a test substrate. The obtained test substrate was immersed in an etching solution at 25 ° C. for 5 minutes, taken out, cut, and observed under a microscope with a magnification of 400 × to examine nickel side etching under the copper pattern. Table 3 shows the results.
【0026】[0026]
【表3】 [Table 3]
【0027】表3に示されるように、本発明のエッチン
グ液はニッケルのエッチング速度が速く、しかも銅の侵
食がごくわずかであり、銅の外観に変化を生じさせなか
った。また銅パターン下のニッケルの溶解(サイドエッ
チング)は観察されなかった。As shown in Table 3, the etching solution of the present invention had a high nickel etching rate and very little copper erosion, and did not change the appearance of copper. Further, dissolution of nickel (side etching) under the copper pattern was not observed.
【0028】[0028]
【発明の効果】本発明によれば、ニッケルまたはニッケ
ル合金のエッチング速度が速く、かつそれら以外の金
属、特に銅や銅合金の浸食がきわめて少ないニッケルま
たはニッケル合金のエッチング液を提供することができ
る。更に、本発明によれば、サイドエッチングがほとん
ど生じないニッケルまたはニッケル合金のエッチング液
を提供することができる。According to the present invention, it is possible to provide an etching solution for nickel or a nickel alloy in which the etching rate of nickel or a nickel alloy is high and erosion of other metals, particularly copper or a copper alloy, is extremely small. . Further, according to the present invention, it is possible to provide an etching solution of nickel or a nickel alloy in which side etching hardly occurs.
───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 4K057 WA13 WB03 WB15 WE02 WE03 WE08 WE09 WE11 WE15 WE16 WE25 WE30 WG03 WN01 5E339 BC01 BC02 BE13 BE17 GG02 5F043 AA26 BB15 FF10 GG02 GG04 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K057 WA13 WB03 WB15 WE02 WE03 WE08 WE09 WE11 WE15 WE16 WE25 WE30 WG03 WN01 5E339 BC01 BC02 BE13 BE17 GG02 5F043 AA26 BB15 FF10 GG02 GG04
Claims (2)
金属が混在している材料からニッケルまたはニッケル合
金を選択的にエッチングするエッチング液であって、
(A)硝酸5〜55重量%、(B)硫酸0.5〜40重
量%、(C)過酸化物、硝酸塩および芳香族ニトロ化合
物から選ばれた主酸化剤0.1〜20重量%ならびに
(D)塩素イオン0.0001〜0.5重量%を含有す
る水溶液からなるニッケルまたはニッケル合金のエッチ
ング液。An etchant for selectively etching nickel or a nickel alloy from a material in which nickel or a nickel alloy and another metal are mixed,
(A) 5-55% by weight of nitric acid, (B) 0.5-40% by weight of sulfuric acid, (C) 0.1-20% by weight of a main oxidizing agent selected from peroxides, nitrates and aromatic nitro compounds; (D) An etching solution for nickel or a nickel alloy comprising an aqueous solution containing 0.0001 to 0.5% by weight of chloride ions.
有する請求項1記載のエッチング液。2. The etching solution according to claim 1, comprising 0.01 to 6% by weight of a pyridine derivative.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000122946A JP2001140084A (en) | 1999-08-27 | 2000-04-24 | Etching solution for nickel or nickel alloy |
DE2000139684 DE10039684A1 (en) | 1999-08-27 | 2000-08-14 | Solution for selective etching of nickel or alloy from material also contain other metals, useful in e.g. semiconductor device or circuit board manufacture, contains nitric and sulfuric acids, oxidant, chloride ions and water |
TW89117064A TW508374B (en) | 1999-08-27 | 2000-08-24 | Etching solution for nickel or nickel alloy, and etching method |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11-241784 | 1999-08-27 | ||
JP24178499 | 1999-08-27 | ||
JP2000122946A JP2001140084A (en) | 1999-08-27 | 2000-04-24 | Etching solution for nickel or nickel alloy |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2001140084A true JP2001140084A (en) | 2001-05-22 |
Family
ID=26535444
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000122946A Pending JP2001140084A (en) | 1999-08-27 | 2000-04-24 | Etching solution for nickel or nickel alloy |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2001140084A (en) |
DE (1) | DE10039684A1 (en) |
TW (1) | TW508374B (en) |
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DE10039684A1 (en) | 2001-05-23 |
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