JP2001035988A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JP2001035988A JP2001035988A JP11202896A JP20289699A JP2001035988A JP 2001035988 A JP2001035988 A JP 2001035988A JP 11202896 A JP11202896 A JP 11202896A JP 20289699 A JP20289699 A JP 20289699A JP 2001035988 A JP2001035988 A JP 2001035988A
- Authority
- JP
- Japan
- Prior art keywords
- package
- semiconductor device
- lead
- leads
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、リードフレームに
搭載された半導体素子をパッケージで気密封止してなる
半導体装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a semiconductor element mounted on a lead frame is hermetically sealed with a package.
【０００２】[0002]
【従来の技術】従来、この種の半導体装置は、リードフ
レームに搭載された半導体素子をパッケージで気密封止
しており、そのパッケージの周辺からリードが横向きに
突き出た構造になっている。2. Description of the Related Art Conventionally, this type of semiconductor device has a structure in which a semiconductor element mounted on a lead frame is hermetically sealed with a package, and leads are projected laterally from the periphery of the package.
【０００３】この種の半導体装置は、そのリードを基板
の回路パターンに接続して基板に搭載した状態で使用す
るようになっている。A semiconductor device of this type is used in a state where its leads are connected to a circuit pattern on a substrate and mounted on the substrate.
【０００４】ところで、近年、基板への実装密度を高め
ることが要求されるようになっている。In recent years, it has been required to increase the mounting density on a substrate.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、従来の
上述した半導体装置は、基板に実装された状態での隣接
するもの同士が基板の回路パターンを介して接続される
ため、実装密度を高めるには限界がある。However, in the above-described conventional semiconductor device, adjacent devices mounted on a substrate are connected to each other via a circuit pattern of the substrate. There is a limit.
【０００６】最近では、１個の半導体装置に組込む半導
体素子の個数を増やし、かつリードの配置によって本数
を増やすことにより、実質的な実装密度を高める工夫が
されているが、この構造にしても隣接する半導体装置間
には、基板の回路パターンを設ける必要があるため、そ
の実装密度を高めるには限界がある。Recently, it has been devised to increase the actual mounting density by increasing the number of semiconductor elements incorporated in one semiconductor device and by increasing the number of leads by arranging the leads. Since it is necessary to provide a circuit pattern of a substrate between adjacent semiconductor devices, there is a limit in increasing the mounting density.
【０００７】以上の状況を考えると、実装密度を高める
には、基板の回路パターンを廃止すればよいが、現在の
半導体装置の構造は、そのリードを基板の回路パターン
に接続するものであり、基板の回路パターンを廃止する
ことが不可能である。[0007] In view of the above situation, to increase the mounting density, the circuit pattern of the substrate may be abolished. However, the current structure of a semiconductor device connects its leads to the circuit pattern of the substrate. It is impossible to abolish the circuit pattern of the substrate.
【０００８】本発明の目的は、半導体装置のリード同士
を直接接続する構造に改良することにより、実装密度を
高める半導体装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device having an improved structure in which leads of the semiconductor device are directly connected to each other to increase the mounting density.
【０００９】[0009]
【課題を解決するための手段】前記目的を達成するた
め、本発明に係る半導体装置は、リードフレームに搭載
された半導体素子をパッケージで気密封止してなる半導
体装置であって、前記パッケージの端縁部を切欠いてパ
ッケージ同士の突合わせ部を形成し、かつ前記突合わせ
部にリードを露出させたものである。In order to achieve the above object, a semiconductor device according to the present invention is a semiconductor device in which a semiconductor element mounted on a lead frame is hermetically sealed with a package. An edge portion is cut out to form an abutting portion between the packages, and a lead is exposed at the abutting portion.
【００１０】また前記突合わせ部に露出したリード同士
を重ね合せた板厚が前記リードフレームの板厚に等しい
ものである。[0010] Further, the thickness of the lead, which is exposed at the butting portion, is equal to the thickness of the lead frame.
【００１１】また前記重ね合せたリードは、突き合され
た前記パッケージで被覆されるものである。Further, the superposed leads are covered with the butted package.
【００１２】[0012]
【発明の実施の形態】以下、本発明の実施の形態を図に
より説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to the drawings.
【００１３】図１（ａ）は、本発明の一実施形態に係る
半導体装置を示す断面図、（ｂ）は、図１（ａ）に示す
半導体装置を組合せた状態を示す断面図である。FIG. 1A is a sectional view showing a semiconductor device according to an embodiment of the present invention, and FIG. 1B is a sectional view showing a state where the semiconductor device shown in FIG. 1A is combined.
【００１４】図１に示す本発明の一実施形態に係る半導
体装置は、リードフレームのダイパッド６上に接着剤５
にて半導体素子１を搭載し、半導体素子１の電極とリー
ドフレームのリード３とをワイヤ２で結線し、これらの
周囲を封止樹脂４からなるパッケージで気密封止してい
る。The semiconductor device according to one embodiment of the present invention shown in FIG. 1 has an adhesive 5 on a die pad 6 of a lead frame.
, The electrodes of the semiconductor element 1 and the leads 3 of the lead frame are connected by wires 2, and the periphery thereof is hermetically sealed with a package made of a sealing resin 4.
【００１５】本発明の実施形態に係る半導体装置におい
ても従来と同様に、リード３をパッケージ４の周辺から
横方向に突き出して設けているが、そのリード３を利用
して半導体装置同士を直接接続するようにした点が従来
例のものと相違するものである。In the semiconductor device according to the embodiment of the present invention, the leads 3 are provided so as to protrude laterally from the periphery of the package 4 as in the prior art, and the semiconductor devices are directly connected to each other by using the leads 3. This is different from the conventional example.
【００１６】すなわち図１に示す本発明の実施形態に係
る半導体装置においては、パッケージ４の少なくとも１
辺に設けたリード３ａは、パッケージ４の外端までの長
さに制限されており、その制限された長さをもつリード
３ａが設けられたパッケージ４の端縁部を切欠いてパッ
ケージ同士の突合わせ部４ａを形成し、その突合わせ部
４ａにリード３ａを露出させている。That is, in the semiconductor device according to the embodiment of the present invention shown in FIG.
The length of the lead 3a provided on the side is limited to the length of the outer end of the package 4, and the package 3 provided with the lead 3a having the limited length is cut off at the edge of the package 4 to protrude between the packages. The joining portion 4a is formed, and the lead 3a is exposed at the butting portion 4a.
【００１７】本発明の実施形態では図１（ａ）に示すよ
うに、パッケージ同士の突合わせ部４ａに臨むリード３
ａにハーフエッチングを施して、その板厚を通常のリー
ド厚の半分にして露出させている。In the embodiment of the present invention, as shown in FIG. 1A, the leads 3 facing the abutting portion 4a of the packages are formed.
The half a is subjected to half-etching so that its thickness is reduced to half of the normal lead thickness and is exposed.
【００１８】通常使用されているリード厚は１２５〜１
５０μｍであるが、リード３ａの露出した部分の板厚は
６５〜７５μｍ程度になっている。A commonly used lead thickness is 125 to 1
The thickness of the exposed portion of the lead 3a is about 65 to 75 μm.
【００１９】本発明の実施形態では図１（ａ）に示すよ
うに、その制限された長さをもつリード３ａが設けられ
たパッケージ４の端縁部を肉厚方向に切欠き、その底部
側にリード３ａの上面を露出し、さらにリード３ａの板
厚を半分にしているため、リード３ａは、突合わせ部４
ａの切り立った側壁とパッケージ４の外端縁に沿う縦向
きの側壁３ｂ，３ｃと、縦向きの側壁３ｂ，３ｃ間に位
置する横向きの上面３ｄとの３面が突合わせ部４ａに露
出することとなる。In the embodiment of the present invention, as shown in FIG. 1A, an edge of a package 4 provided with a lead 3a having a limited length is cut out in a thickness direction, and a bottom side thereof is cut out. Since the upper surface of the lead 3a is exposed and the thickness of the lead 3a is halved, the lead 3a
The three side surfaces of the steep side wall a, the vertical side walls 3b and 3c along the outer edge of the package 4, and the horizontal upper surface 3d located between the vertical side walls 3b and 3c are exposed to the butting portion 4a. It will be.
【００２０】なお、図１（ａ）に示す例では、パッケー
ジ同士の突合わせ部４ａは、パッケージ４の上面側，右
面側，前後面側のそれぞれに全面開放しているが、これ
に限定されるものではなく、半導体装置同士を突合わせ
る状態により開放の面数及び全面開放，部分開放を適宜
変更すればよい。In the example shown in FIG. 1A, the butting portions 4a of the packages are completely open to the upper surface, the right surface, and the front and rear surfaces of the package 4, but the invention is not limited to this. Instead, the number of open surfaces, the entire open area, and the partial open area may be appropriately changed depending on the state in which the semiconductor devices abut each other.
【００２１】図２に示すように２個の半導体装置同士を
基板を用いることなく接続するには、図４（ａ）に示す
ように一方の半導体装置を表向きに配置し、図４（ｂ）
に示すように突合わせ部４ａに露出したリード３ａの上
面３ｄにノズル１０から導電性接着剤７を塗布する。In order to connect two semiconductor devices without using a substrate as shown in FIG. 2, one semiconductor device is arranged face up as shown in FIG.
The conductive adhesive 7 is applied from the nozzle 10 to the upper surface 3d of the lead 3a exposed at the butting portion 4a as shown in FIG.
【００２２】更に図４（ｃ）に示すように他方の半導体
装置を裏向きに配置し、その両者のリード３ａを除く突
合わせ部４ａに図示しない接着剤を塗布し、２つの半導
体装置のリード３ａを位置決めしてリード３ａ同士を３
面３ｂ，３ｃ，３ｄで接合し、かつ突合わせ部４ａ同士
を突合わせる。この場合、重ね合せたリード３ａは突合
わせたパッケージ４により被覆され、その重ね合せたリ
ード３ａの板厚はリードフレームの板厚とほぼ等しくな
り、２個の半導体装置のパッケージ４の表面が同一面内
に整合される。Further, as shown in FIG. 4 (c), the other semiconductor device is placed face down, and an adhesive (not shown) is applied to the butting portion 4a except for the leads 3a of the other semiconductor device. Position 3a and connect leads 3a to each other.
The surfaces 3b, 3c, 3d are joined, and the butting portions 4a are butted together. In this case, the superposed leads 3a are covered with the butted package 4, and the thickness of the superposed leads 3a is substantially equal to the thickness of the lead frame, and the surfaces of the packages 4 of the two semiconductor devices are the same. In-plane alignment.
【００２３】また突合わせたパッケージ４の隙間Ｓに封
止樹脂を流し込んで気密封止し、図２に示すようにパッ
ケージ４の外形を平坦に整える。Also, a sealing resin is poured into the gap S of the butted package 4 to hermetically seal it, and the outer shape of the package 4 is flattened as shown in FIG.
【００２４】半導体装置の種類によってはリードが信号
の入出力端子を兼ねるもの、或いは電源或いは接地端子
として作用するものがあり、これらのものはリード同士
を直接接続することが可能であるため、この種の半導体
装置に本発明を適用することにより、基板の回路パター
ンを介することなく直接接続して半導体装置間の設置ス
ペースを縮小して実装密度を高めることができる。Depending on the type of the semiconductor device, the lead also serves as a signal input / output terminal, or acts as a power supply or a ground terminal. Since these leads can directly connect the leads to each other, these leads are used. By applying the present invention to various kinds of semiconductor devices, it is possible to reduce the installation space between the semiconductor devices by directly connecting the semiconductor devices without using a circuit pattern on the substrate and to increase the mounting density.
【００２５】図１（ａ）では、リード３ａの上面側を露
出するようにしたが、パッケージ４の下面側に突合わせ
部４ａを形成して、リード３ａの下面側を露出するよう
にしてもよく、突合わせるパッケージ４の状態に応じて
種々変更すればよいものである。In FIG. 1A, the upper surface of the lead 3a is exposed, but a butted portion 4a may be formed on the lower surface of the package 4 to expose the lower surface of the lead 3a. What is necessary is just to make various changes according to the state of the package 4 to be matched.
【００２６】図１に示す本発明の一実施形態に係る半導
体装置を製造する場合を図３に基づいて説明する。A case of manufacturing the semiconductor device according to one embodiment of the present invention shown in FIG. 1 will be described with reference to FIG.
【００２７】図３（ａ）に示すようにリード３ａを露出
するような金型を用い樹脂封止を行うが、リード３ａの
上面を露出させるにはハーフエッチングを上面に施し、
そのハーフエッチング部に合わせた突部８ｃをもつ上金
型８ａを使用する。As shown in FIG. 3A, resin sealing is performed using a mold that exposes the lead 3a. To expose the upper surface of the lead 3a, half etching is performed on the upper surface.
An upper mold 8a having a protrusion 8c corresponding to the half-etched portion is used.
【００２８】上金型８ａ及び下金型８ｂは共に露出部を
形成できるような脱着式金型パーツを設けた方が良い。It is preferable that both the upper mold 8a and the lower mold 8b are provided with removable mold parts so that an exposed portion can be formed.
【００２９】図３（ｂ）のように金型８ａ，８ｂのキャ
ビテイ８ｄ内に樹脂封止を注入し、その樹脂をパッケー
ジ４として気密封止を行う。As shown in FIG. 3B, resin sealing is injected into the cavities 8d of the molds 8a and 8b, and the resin is used as the package 4 to perform hermetic sealing.
【００３０】また樹脂の注入を行う際に上金型８ａの突
部８ｃを用いて、パッケージ４の端縁部を内側に後退さ
せ、パッケージ４の突合わせ部４ａを凹ませて形成す
る。When the resin is injected, the edge of the package 4 is retracted inward by using the protrusion 8c of the upper mold 8a, and the butted portion 4a of the package 4 is formed to be concave.
【００３１】次に図３（ｃ）のように、露出したリード
３ａをパッケージ４の端縁でパンチ９を使って切り落と
し、図３（ｄ）及び図１（ａ）に示す形状に成形する。Next, as shown in FIG. 3C, the exposed leads 3a are cut off at the edges of the package 4 using a punch 9, and formed into the shapes shown in FIGS. 3D and 1A.
【００３２】また本発明の実施形態では、パッケージ４
の一辺に突合わせ部４ａを設けたが、これに限定される
ものではなく、パッケージ４の各辺に突合わせ部４ａを
設けるようにしてもよい。In the embodiment of the present invention, the package 4
Although the butted portion 4a is provided on one side of the package 4, the present invention is not limited to this, and the butted portion 4a may be provided on each side of the package 4.
【００３３】[0033]
【発明の効果】以上説明したように本発明によれば、半
導体装置のパッケージに設けた突合わせ部同士を突合わ
せ、かつリード同士を重ね合せることにより、基板の回
路パターンを用いることなく、半導体装置同士を組合せ
ることができ、基板上のスペースを有効に使用して実装
密度を向上させることができる。As described above, according to the present invention, the butting portions provided on the package of the semiconductor device are butted together and the leads are overlapped with each other, so that the semiconductor device can be used without using the circuit pattern of the substrate. The devices can be combined with each other, and the space on the substrate can be effectively used to improve the mounting density.
【００３４】さらに基板の回路パターンを用いることが
ないため、レイアウトや基板の重ね方の制限がなくな
り、自由度が増すことができる。Further, since the circuit pattern of the substrate is not used, there are no restrictions on the layout or the way of overlapping the substrates, and the degree of freedom can be increased.
【００３５】さらにＩＣパッケージ同士の接合に関し
て、露出したリード間に櫛状の金属を介在させて接合さ
せることにより、基板上のレイアウトの自由度が増すこ
とができる。Further, with respect to the bonding between IC packages, the degree of freedom in layout on the substrate can be increased by interposing a comb-shaped metal between the exposed leads to perform bonding.
【図１】（ａ）は、本発明の一実施形態に係る半導体装
置を示す断面図、（ｂ）は、図１（ａ）に示す半導体装
置を組合せた状態を示す断面図である。1A is a cross-sectional view showing a semiconductor device according to an embodiment of the present invention, and FIG. 1B is a cross-sectional view showing a state where the semiconductor device shown in FIG. 1A is combined.
【図２】本発明の一実施形態に係る半導体装置を組合せ
た状態を示す平面図である。FIG. 2 is a plan view showing a state where the semiconductor devices according to one embodiment of the present invention are combined.
【図３】本発明の一実施形態に係る半導体装置を製造す
る場合を工程順に示す断面図である。FIG. 3 is a cross-sectional view showing a step of manufacturing a semiconductor device according to an embodiment of the present invention in the order of steps.
【図４】本発明の一実施形態に係る半導体装置を組合せ
る状態を示す断面図である。FIG. 4 is a cross-sectional view showing a state in which semiconductor devices according to one embodiment of the present invention are combined.
１ 半導体素子 ２ ワイヤ ３，３ａ リード ４ パッケージ ４ａ 突合わせ部 DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Wire 3, 3a Lead 4 Package 4a Butt joint
Claims (3)
をパッケージで気密封止してなる半導体装置であって、 前記パッケージの端縁部を切欠いてパッケージ同士の突
合わせ部を形成し、かつ前記突合わせ部にリードを露出
させたことを特徴とする半導体装置。1. A semiconductor device in which a semiconductor element mounted on a lead frame is hermetically sealed with a package, wherein an edge of the package is cut off to form an abutting portion between the packages, and A semiconductor device characterized in that leads are exposed at a joining portion.
重ね合せた板厚が前記リードフレームの板厚に等しいも
のであることを特徴とする請求項１に記載の半導体装
置。2. The semiconductor device according to claim 1, wherein the thickness of the lead exposed at the butting portion is equal to the thickness of the lead frame.
前記パッケージで被覆されるものであることを特徴とす
る請求項１に記載の半導体装置。3. The semiconductor device according to claim 1, wherein the superposed leads are covered by the butted package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20289699A JP3274661B2 (en) | 1999-07-16 | 1999-07-16 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20289699A JP3274661B2 (en) | 1999-07-16 | 1999-07-16 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001035988A true JP2001035988A (en) | 2001-02-09 |
| JP3274661B2 JP3274661B2 (en) | 2002-04-15 |
Family
ID=16465004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20289699A Expired - Fee Related JP3274661B2 (en) | 1999-07-16 | 1999-07-16 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3274661B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007035670A (en) * | 2005-07-22 | 2007-02-08 | Denso Corp | Semiconductor device |
| DE102014113519B4 (en) | 2013-10-01 | 2021-09-16 | Infineon Technologies Austria Ag | Electronic component, arrangement and method |
-
1999
- 1999-07-16 JP JP20289699A patent/JP3274661B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007035670A (en) * | 2005-07-22 | 2007-02-08 | Denso Corp | Semiconductor device |
| JP4581885B2 (en) * | 2005-07-22 | 2010-11-17 | 株式会社デンソー | Semiconductor device |
| DE102006032490B4 (en) * | 2005-07-22 | 2014-07-03 | Denso Corporation | Semiconductor device |
| DE102014113519B4 (en) | 2013-10-01 | 2021-09-16 | Infineon Technologies Austria Ag | Electronic component, arrangement and method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3274661B2 (en) | 2002-04-15 |
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