JP2001020068A - Ion beam processor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To achieve the ion beam processing on a sample using an electrode having an ion beam generating area smaller than the area of the sample. SOLUTION: A lead electrode 62 of an ion source is rectangular, the length (height) 62a in the longitudinal direction of the lead electrode 62 is smaller than the length (width) 46a in the longitudinal direction of a substrate 46, and larger than the height direction. In a process that the substrate 46 is carried along the carrying direction Y, a surface to be worked of the substrate 46 is irradiated with the ion beam 52 from the lead electrode 62 in the orthogonal direction.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion beam processing apparatus, and more particularly, to an ion beam processing apparatus suitable for performing a film forming process and a fine processing process on a sample.

[0002]

2. Description of the Related Art Conventionally, as an ion beam processing apparatus, an ion beam milling apparatus for performing fine processing on a sample such as a substrate using an ion beam, or a target is irradiated with an ion beam to sputter the target, and the sputtered substance There is known an ion beam sputtering apparatus that deposits a film on a sample to form a film.

On the other hand, the size of a sample to be processed by an ion beam processing apparatus, for example, a rectangular (rectangular) sample used for a liquid crystal display or the like has increased dramatically in recent years. The size has been increased accordingly. That is, the ion source and the ion source electrode in the ion beam processing apparatus are mainly of a cylindrical type and a disk type, respectively, and the ion source electrode is generally larger than the sample. For this reason, it is inevitable to increase the size of the ion beam processing apparatus as the size of the sample increases. In addition, as an ion beam sputtering apparatus having a square shape other than the disk-shaped ion source electrode, for example, an ion beam sputtering apparatus described in JP-A-4-6272 is known.

[0004]

In the prior art, when processing a large rectangular sample used for a liquid crystal display or the like, it is necessary to manufacture an ion source electrode larger than the sample. Space is increased and manufacturing costs are increased.

It is an object of the present invention to provide an ion beam processing apparatus capable of processing a sample using an electrode having an ion beam generating surface smaller than the sample.

[0006]

To achieve the above object, the present invention provides a sample holder for holding a sample, a vacuum chamber for accommodating the sample holder, and a transfer path in the vacuum chamber for transferring the sample holder. Transport means for transporting the sample gas along the path, and an ion source for generating a plasma beam from the processing gas and extracting ions in the plasma by an extraction electrode to generate an ion beam, and processing the sample with the ion beam generated from the ion source. The ion beam processing apparatus is configured such that the direction of incidence on the surface and the direction of transport of the sample transported while being held by the sample holder are set to cross each other.

In configuring the ion beam processing apparatus, a function of irradiating an ion beam from the ion source to a sample transported while being held by the sample holder can be added.

In configuring each of the ion beam processing apparatuses, the following elements can be added. (1) The extraction electrode and the sample are both formed in a rectangular shape, and the ion beam generated from the ion source is conveyed while being held by the sample holder and the incident direction of the sample on the surface to be processed of the sample. The transport directions of the samples are set to directions orthogonal to each other.

(2) The extraction electrode and the sample are both formed in a rectangular shape, and the length of the extraction electrode in the longitudinal direction is set to be longer than the length in the direction intersecting the longitudinal direction of the sample.

(3) The extraction electrode and the sample are both formed in a rectangular shape, and the length of the extraction electrode in the longitudinal direction is set shorter than the length of the sample in the longitudinal direction.

(4) The extraction electrode and the sample are both formed in a rectangular shape, and the length of the extraction electrode in the longitudinal direction is longer than the length in the direction intersecting the longitudinal direction of the sample, and It is set shorter than the length in the longitudinal direction.

(5) The longitudinal direction of the sample and the transport direction of the sample are set to be the same.

(6) The transport means transports the sample holder in a direction crossing the ion beam generated from the ion source.

(7) The transport means transports the sample holder at a constant speed.

(8) The transfer means adjusts a transfer speed of the sample holder according to a processing state of the sample.

(9) The transfer means stops the transfer of the sample holder when the generation of the ion beam from the ion source is stopped by the breakdown, and thereafter, the recovery of the breakdown causes the ion beam to be transferred from the ion source. When this occurs, the transport of the sample holder is restarted again.

(10) The transfer means stops the transfer of the sample holder when the generation of the ion beam from the ion source is stopped due to the breakdown, and thereafter, the ion beam is output from the ion source when the breakdown is recovered. When this occurs, the transport of the sample holder is started again after the sample is irradiated with the ion beam for a loss time accompanying the stoppage of the transport of the sample holder.

(11) A plurality of ion sources are provided as the ion source, the one ion source directly irradiating an ion beam toward the transport path, and the other ion source is connected to a target chamber containing a target. Then, an ion beam generated from the other ion source is irradiated onto the transport path as a sputter beam by sputtering the target.

(12) A plurality of ion sources are provided as the ion source, and the one ion source directly irradiates an ion beam toward the transport path, and the other ion source is connected to a target chamber containing a target. An ion beam generated from the other ion source is sputtered onto the target and irradiated as a sputter beam toward the transport path. The one ion source and the target chamber are separated from the ion beam generation surface by sputtering. The beam generating surfaces are arranged so as to be on the same plane.

(13) The extraction electrodes of the one ion source and the other ion source are formed in a rectangular shape, and a rectangular opening is formed in the target chamber as a sputter beam generation surface. And the target chamber are arranged such that the longitudinal direction of the extraction electrode of the one ion source and the longitudinal direction of the sputter beam generation surface of the target chamber are parallel to each other.

According to the above-mentioned means, since the direction of incidence of the ion beam on the surface to be processed and the direction of transport of the sample are set to cross each other, the sample is irradiated with the ion beam while transporting the sample. Thus, even when an electrode having an ion beam generating surface smaller than the sample is used, the entire surface of the sample can be subjected to processing such as film formation processing or micromachining processing, thereby reducing the size of the ion source and the size of the apparatus. This can contribute to a reduction in installation space and a reduction in manufacturing cost.

When the generation of the ion beam from the ion source is stopped by the breakdown, the transport of the sample holder is stopped. When the ion beam is generated from the ion source by the recovery of the breakdown, the transport of the sample holder is stopped. After irradiating the sample with the ion beam for the loss time accompanying, the sample holder is again transported, so that even if the ion beam is cut off due to breakdown, the sample is properly processed and the processing accompanying the breakdown is performed. Unevenness can be corrected.

[0023]

DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is an overall configuration diagram of a combined ion beam processing apparatus according to an embodiment of the present invention. FIG.
In the composite ion beam processing apparatus, the control panel 1
0, transfer mechanism unit 12, door valve 14, evacuation unit 1
6, take-out chamber 18, gate valve 20, processing chamber 22, ion source 24 for ion beam sputtering, target chamber 2
6. Ion beam milling ion source 28, gate valve 3
0, a transfer chamber 32, and a vacuum exhaust unit 34.

The control panel 10 is operated based on an operator's operation.
It is configured to control the driving of the transfer mechanism unit 12, the vacuum exhaust units 16, 34, and the like.

As shown in FIG. 2, the transfer mechanism 12
A motor 36, a gear 38, a pair of rails 40, and a ball screw 42 are disposed as a transport unit.
2, a substrate holder 44 is arranged to reciprocate and rotate freely. The substrate holder 44 is configured as a substantially U-shaped frame, and a large-sized glass substrate 46 for a liquid crystal display is fixed as a sample in a rectangular opening 44a. A screw portion 48 is provided at the center of the bottom of the substrate holder 44.
Are fixed, and four sliders 50 are fixed. The screw portion 48 is disposed so as to mesh with the screw portion 42a of the ball screw 42 disposed between the rails 40. The four sliders 50 can run on the pair of rails 40, respectively. Are located. The screw portion 42b of the ball screw 42 is disposed so as to mesh with the gear 38, and the gear 38
Is connected to the rotating shaft. When the motor 36 is driven to rotate forward and rotates in the direction of the arrow X, the gear 38 and the screw 4
The ball screw 42 is rotated by meshing with the screw 2b, and the substrate holder 44 is driven forward in the transport direction Y by meshing of the screw portion 48 and the screw portion 42a.

When the substrate 46 is fixed to the substrate holder 44, the substrate holder 44 is arranged in a horizontal state.
After that, the rectangular substrate 46 is fixed to the substrate holder arranged in a horizontal state. After this, an erecting mechanism (not shown)
Drives the substrate holder 44 upright by about 90 degrees, and the sliders 50 are arranged on the rails 40.

When the motor 36 is driven to rotate in reverse by a command from the control panel 10, the substrate holder 44 moves backward in the direction opposite to the transport direction Y.

When the substrate 36 is transported in the upright state by the forward rotation of the motor 36, the door valve 14 is opened, and the substrate is transported into the charging / discharging chamber 18 which has been leaked to the atmosphere in advance. That is, the processing room 2
2. A pair of rails 40 and a ball screw 42 are installed in the transfer path of the substrate holder 44 together with the transfer chamber 32, and the substrate holder 44 is driven by the motor 36 to move the substrate holder 44 into the loading / unloading chamber 18, the processing chamber 22, and the transfer path. The inside of the chamber 32 can be transported. When the substrate holder 44 is transported into the loading / unloading chamber 18, the door valve 14 closes, and the evacuation unit 16
Is driven to evacuate the charging / discharging chamber 18, and the inside of the charging / discharging chamber 18 is maintained at a high vacuum.

When the evacuation of the charging / discharging chamber 18 is completed, the substrate holder 44 is transferred into the processing chamber 22 of the processing chamber 22 and the transfer chamber 32 which have been maintained at a high vacuum in advance by driving the vacuum exhaust unit 34. At this time, the substrate holder 44 is transported at a constant speed along the transport path, and an ion beam 50 from the ion source 24 or an ion beam from the ion source 28 is applied to a processing surface of the substrate 46 fixed to the substrate holder 44. The beam 52 is irradiated. The ion beams 50 and 52 are
Irradiation is performed in a direction intersecting the transport direction Y of the substrate 46, for example, in a direction orthogonal to the transport direction Y. When the processing by the ion source 24 is selected while the substrate holder 44 is being conveyed at a constant speed, the ion beam 5
A film forming process in which a target material obtained by sputtering a target 54 in the target chamber 26 is deposited on the surface of the substrate 46 is uniformly performed on the entire surface of the substrate 46.

On the other hand, when the ion source 28 is selected, the ion beam 52 is applied to the surface of the substrate 46 while the substrate holder 44 is being conveyed at a constant speed, so that the surface of the substrate 46 is shaved. Processing (milling) is performed uniformly.

Here, in the present embodiment, the substrate 46
In order to make the size of the ion beam generating surfaces of the ion sources 24 and 28 smaller than the size (area) of the ion sources 24 and 28 to reduce the size of the ion sources 24 and 28, the ion sources 24 and 28 are configured as follows. ing.

The ion sources 24 and 28 are the same as those of the ion source 2 except that the target chamber 26 is connected to the ion source 24.
4 and the ion source 28 have the same configuration.
Reference numeral 28 denotes a container 56 and a filament 5 as shown in FIG.
8, extraction electrodes 60 and 62, acceleration power supply 64, deceleration power supply 6
6. An ammeter 68 is provided. The container 56 is formed in a substantially bowl shape with one end opened, and an extraction electrode 60 as an acceleration electrode and an extraction electrode 62 as a deceleration electrode are arranged on the open end side. 600 V for the extraction electrode 60
The accelerating power supply 64 for generating the voltage of the
2 is connected to a deceleration power source 66 for generating a voltage of -200V. The processing gas is introduced into the container 56 from the introduction port 70. The processing gas introduced into the container 56 is turned into plasma by thermionic electrons generated from the filament 58 to be in a plasma state. The gas is extracted as an ion beam by the potential difference between the extraction electrode 60 and the extraction electrode 62. That is, the ion sources 24 and 28 are configured as ion beam generating means for generating an ion beam.

As shown in FIG. 4, each of the extraction electrodes 60 and 62 is formed in a rectangular shape, for example, a rectangular shape.
In each of the extraction electrodes 60 and 62, a hole 72 having a diameter of several mm is formed over the entire surface as an ion beam generation surface. Further, the extraction electrode 62 has a length (height) 62a in the longitudinal direction shorter than the length 46a in the longitudinal direction of the substrate 46 and a length in a direction intersecting with the longitudinal direction of the substrate 46,
That is, the length (height) 46b in the direction orthogonal to the longitudinal direction
It is formed longer. In this case, the width (length in the direction intersecting the longitudinal direction) of the extraction electrode 62 is
Is smaller than the height and width.

In the present embodiment, the substrate 46 is transported in a direction perpendicular to the ion beam 50 or 52 as the ion beam generating surfaces of the extraction electrodes 60 and 62 are made smaller than the substrate 46. That is, in the process in which the substrate 46 is transported along the same direction as the transport direction Y along the longitudinal direction, the ion beam 50 or the ion beam 52 extracted from the extraction electrode 62 is sequentially irradiated on the surface to be processed of the substrate 46. Then, the entire surface of the substrate 46 is irradiated with the ion beam 50 or 52.

In the target chamber 26 connected to the ion source 24, a target 54 is disposed in a state of being inclined by 45 degrees with respect to the ion beam generating surface of the extraction electrode 62. Is irradiated on the target 54, an ion beam 50 obtained by sputtering the target 54 is incident on the surface to be processed of the substrate 46 at an angle of 90 degrees as a sputter beam. This sputter beam is generated using the opening 26a of the target chamber 26 as an ion beam generating surface, and the opening 26a is formed in a rectangular shape, for example, a rectangular shape, like the extraction electrode 62. The target chamber 26 and the ion source 28 are arranged such that the sputter beam generation surface of the target chamber 26 and the ion beam generation surface of the ion source 28 are on the same plane. That is, the target chamber 26 and the ion source 28 are arranged such that the longitudinal direction of the extraction electrode 62 of the ion source 28 and the longitudinal direction of the sputter beam generation surface of the target chamber 26 are parallel to each other.

An ammeter 6 is provided between the deceleration power source 66 and the ground.
The ammeter 68 is connected to the control panel 10. When the beam breaks due to the breakdown, that is, when the generation of the ion beam from the ion source 24 or the ion source 28 is stopped, it is determined that the beam break has occurred due to abnormal discharge or the like, and the driving of the transporting means is commanded by the control panel 10. It is controlled.

For example, when the substrate 46 is being transported at a constant speed, a breakdown occurs in the ion source 28,
As shown in FIG. 5A, when the beam breaks during the time t1, as shown in FIG. 5B, a bulge 46A due to the beam break occurs on a part of the surface of the substrate 46. The swelling 46A is insufficiently processed.

Therefore, in the present embodiment, the processing shown in FIG. 6 is executed. First, the value of the beam current based on the output of the ammeter 68 is monitored (step S10),
When it is detected that a beam break has occurred in the ion source 28 due to abnormal discharge or the like, that is, when the output of the ammeter 68 becomes 0 (step S12), the control panel 10 outputs a drive stop signal to the motor 36. Then, the transfer of the substrate holder 44 is stopped (Step S14). At this time, FIG.
As shown in (c), during the period from when the beam break occurs to when the transfer of the substrate holder 44 is actually stopped,
Loss time t2 occurs. Then, after time t1 after the beam break occurs, the breakdown recovers and the ion source 28
When an ion beam is generated from (Step S1
6), the back-up time (loss time) is counted up (step S18). That is, considering that the substrate 46 has been transported without irradiation of the ion beam during the loss time t2, the motor 36 is driven and the substrate holder 44 is transported after a fixed time t3 (t2 = t3) from when the breakdown is recovered. (Step S20). As a result, the portion not irradiated with the ion beam due to the beam break is irradiated with the ion beam only for the time t3. In this case, although the depression 46B and the swelling 46C are slightly formed on the surface of the substrate 46 due to the beam cut, the entire surface of the substrate 46 can be uniformly milled as a whole.

In the above embodiment, the substrate holder 44
Has been described, the transfer speed of the substrate holder 40 can be adjusted according to the processing state of the substrate 46.

The substrate 46 irradiated with the ion beam from the ion source 24 or the ion source 28 is transferred from the processing chamber 22 to the transfer chamber 32. Thereafter, when processing is performed on the same substrate 46, the substrate 46 is transported in the reverse direction, and the processing is performed in the processing chamber 22 by the ion beam from the ion source 24 or the ion source 28.

According to the present embodiment, the ion sources 24, 26
Extraction electrode 62 and opening 26a of target chamber 26
Has a rectangular shape, that is, a rectangular shape, and is irradiated with the ion beam 50 or 52 in a direction orthogonal to the substrate 46 moving in the processing chamber 22 constituting the vacuum chamber. Opening 2
Even if the size of 6a is reduced, film formation processing and fine processing processing can be performed over the entire surface of the substrate 46, so that it is possible to reduce the size and space of the apparatus and cost.

Further, according to the present embodiment, the substrate holder 4
In a state where the substrate 46 is once fixed to the substrate 4 (one chuck), the substrate 46 is transported along the transport path, so that a film forming process or a fine processing process can be performed on the substrate 46.

[0043]

As described above, according to the present invention,
Since the direction of incidence of the ion beam on the surface to be processed and the direction of transport of the sample are set so as to intersect each other, irradiating the sample with the ion beam while transporting the sample generates an ion beam smaller than the sample. Even if an electrode having a surface is used, the entire surface of the sample can be subjected to processing such as film formation processing or microfabrication processing, so that the ion source can be downsized and the apparatus can be downsized. This can contribute to a reduction in manufacturing cost.

When the generation of the ion beam from the ion source is stopped by the breakdown, the transport of the sample holder is stopped. When the ion beam is generated from the ion source by the recovery of the breakdown, the transport of the sample holder is stopped. After irradiating the sample with the ion beam for the loss time accompanying, the sample holder is again transported, so that even if the ion beam is cut off due to breakdown, the sample is properly processed and the processing accompanying the breakdown is performed. Unevenness can be corrected.

[Brief description of the drawings]

FIG. 1 is an overall configuration diagram of a combined ion beam processing apparatus according to an embodiment of the present invention.

FIG. 2 is a diagram for explaining a relationship between a substrate holder and a transport mechanism.

FIG. 3 is an internal configuration diagram of an ion source.

FIG. 4 is a perspective view illustrating a relationship between an ion source and a substrate holder.

FIG. 5 is a diagram for explaining a relationship between a beam break and a substrate surface.

FIG. 6 is a flowchart illustrating a process associated with a beam break.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Control panel 12 Transfer mechanism part 14 Door valve 16 Vacuum exhaust part 18 Charging / extracting chamber 20 Gate valve 22 Processing chamber 24 Ion source for ion beam sputtering 26 Target chamber 28 Ion source for ion beam milling 30 Gate valve 32 Transfer chamber 34 Vacuum exhaust Part 44 substrate holder 46 substrate 50, 52 ion beam 54 target 60, 62 extraction electrode

 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Koutaro Oishi 1-1-1, Kokubuncho, Hitachi City, Ibaraki Prefecture Inside the Kokubu Plant, Hitachi, Ltd. (72) Inventor Isao Hashimoto 1-1-1 Kokubuncho, Hitachi City, Ibaraki Prefecture No. 1 F-term in Kokubu Plant of Hitachi, Ltd. (Reference) 4K029 DC37 KA01 5C034 AA01 AA02 AB04 5F004 BB12 BC06 BD05 CA03 CA05 CA08 CB05

Claims (15)

[Claims] 1. A sample holder for holding a sample, a vacuum chamber for accommodating the sample holder, a transport unit for transporting the sample holder along a transport path in the vacuum chamber, and a process gas formed into plasma and extracted. An ion source for extracting ions in plasma by an electrode to generate an ion beam, wherein the ion beam generated from the ion source is transported in a direction in which the sample is incident on the surface to be processed of the sample and held in the sample holder. An ion beam processing apparatus in which the sample transport directions are set in directions that intersect each other. 2. A sample holder for holding a sample, a vacuum chamber for accommodating the sample holder, a transport unit for transporting the sample holder along a transport path in the vacuum chamber, and a process gas being converted into plasma and extracted. An ion source for extracting ions in plasma by an electrode to generate an ion beam, wherein the ion beam generated from the ion source is transported in a direction in which the sample is incident on the surface to be processed of the sample and held in the sample holder. An ion beam processing apparatus, wherein the transport directions of the specimens are set so as to intersect each other, and an ion beam from the ion source is applied to the specimen transported while being held by the specimen holder. 3. The extraction electrode and the sample are both formed in a rectangular shape, and are transported in a direction in which an ion beam generated from the ion source is incident on a surface to be processed of the sample and held by the sample holder. 3. The ion beam processing apparatus according to claim 1, wherein the transport directions of the sample to be performed are set to directions orthogonal to each other. 4. The extraction electrode and the sample are both formed in a rectangular shape, and the length of the extraction electrode in the longitudinal direction is set to be longer than the length in the direction intersecting the longitudinal direction of the sample. The ion beam processing apparatus according to claim 1, 2, or 3. 5. The extraction electrode and the sample are both formed in a rectangular shape, and the length of the extraction electrode in the longitudinal direction is set shorter than the length of the sample in the longitudinal direction. 4. The ion beam processing apparatus according to 1, 2, or 3. 6. The extraction electrode and the sample are both formed in a rectangular shape, and the length of the extraction electrode in the longitudinal direction is longer than the length in a direction intersecting the longitudinal direction of the sample, and the length of the sample is long. 4. The ion beam processing apparatus according to claim 1, wherein the length is set shorter than the length in the direction. 7. The apparatus according to claim 3, wherein a longitudinal direction of the sample and a transport direction of the sample are set to be the same.
7. The ion beam processing apparatus according to 4, 5, or 6. 8. The apparatus according to claim 1, wherein said transport means transports said sample holder in a direction crossing an ion beam generated from said ion source.
The ion beam processing apparatus according to 5, 6, or 7. 9. The apparatus according to claim 1, wherein said transport means transports said sample holder at a constant speed.
The ion beam processing apparatus according to 3, 4, 5, 6, 7, or 8. 10. The apparatus according to claim 1, wherein said transfer means adjusts a transfer speed of said sample holder according to a processing state of said sample.
An ion beam processing apparatus according to any one of the preceding claims. 11. The transporting means stops transporting the sample holder when the generation of the ion beam from the ion source is stopped by the breakdown, and thereafter, the ion beam is generated from the ion source by the recovery of the breakdown. Wherein the transfer of the sample holder is resumed when the operation is performed.
9. The ion beam processing apparatus according to 7 or 8. 12. The transporting means stops transporting the sample holder when the generation of the ion beam from the ion source is stopped by the breakdown, and thereafter, the ion beam is generated from the ion source by the recovery of the breakdown. When the ion beam is irradiated on the sample for a loss time due to the stoppage of the transfer of the sample holder,
9. The ion beam processing apparatus according to claim 1, wherein the transport of the sample holder is started again. 13. The apparatus according to claim 13, further comprising a plurality of ion sources as the ion source, wherein the one ion source directly irradiates an ion beam toward the transport path, and the other ion source is connected to a target chamber containing a target. The ion beam generated from the other ion source is sputtered onto the target by sputtering toward the transport path by sputtering the target.
2, 3, 4, 5, 6, 7, 8, 9, 10, 11, or 1
3. The ion beam processing apparatus according to 2. 14. An ion source comprising a plurality of ion sources, said one ion source directly irradiating an ion beam toward said transport path, and said other ion source is connected to a target chamber containing a target. An ion beam generated from the other ion source is sputtered on the target and irradiated as a sputter beam toward the transport path, and the one ion source and the target chamber are separated from an ion beam generation surface and a sputter beam. 2. A method according to claim 1, wherein said generating surfaces are arranged on the same plane.
13. The ion beam processing apparatus according to 0, 11 or 12. 15. The extraction electrodes of the one ion source and the other ion source are formed in a rectangular shape, and a rectangular opening is formed in the target chamber as a sputter beam generation surface. 15. The target chamber is arranged such that a longitudinal direction of an extraction electrode of the one ion source and a longitudinal direction of a sputter beam generation surface of the target chamber are parallel to each other. Ion beam processing equipment.