JP2001011420A - Adhesive film for semiconductor, and lead frame and semiconductor device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a film excellent in cutting properties and generating neither burrs nor scraps when cut off by forming as an adhesive layer a layer comprising a polyamideimide resin having copolymerized therewith a dimer acid and having a logarithmic viscosity of a specific value or higher on one surface or both surfaces of a support film. SOLUTION: There is provided an adhesive film comprising a support film 5-200 μm in thickness and a layer, formed as an adhesive layer on one surface or both surfaces thereof, comprising a polyamideimide resin having a logarithmic viscosity of at least 0.1 dl/g and obtained by copolymerizing therewith at least 1 wt.% of a dimer acid, and the thickness of the adhesive layer is preferably 1-75 μm. This adhesive film is cut into a prescribed size and sandwiched between a lead frame and a semiconductor element and is contact-bonded at 150-200 deg.C and 5-100 kg/cm2, and subsequently the lead frame and the semiconductor element are joined by gold wires or the like and sealed with an epoxy resin or the like to give a semiconductor device. The polyamideimide resin is prepared by copolymerizing trimellitic anhydride with a diamine or a diisocyanate, and a dimer acid in a solvent at 50-220 deg.C.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an adhesive film for a semiconductor, a lead frame using the same, and a semiconductor device.

[0002]

2. Description of the Related Art Currently, LOC (Lead on Chi)
In a semiconductor package having a p) or COL (Chip on Lead) structure, a semiconductor package having a frame pig structure, and the like, a film-like adhesive is used for bonding a lead frame and a chip. The film-like adhesive mainly has a structure in which an adhesive such as an epoxy resin, a polyester resin, a polyether resin, a polyamide resin, a polyimide resin, and a polyether amide imide resin is coated on one side or both sides of a base film. Used. Normally, these film adhesives are slit into narrow widths by shearing, laser cutting, etc.,
It is cut out into a predetermined shape and pasted to a predetermined part of the lead frame for use, but cutting burrs and chips are frequently generated at the edge of the film adhesive at the time of slitting, lowering the yield in manufacturing lead frames with adhesive film There is a problem of doing.

At present, these problems at the time of cutting are partially solved by adjusting the material and shape of the blade for slitting the film and the clearance between the upper blade and the lower blade. However, in these methods, it takes a long time to adjust the clearance, and depending on the type of tape material, burrs are generated in a short time after the adjustment of the clearance, and the adjustment of the clearance needs to be performed again, thereby lowering productivity. There is a problem, and there is a demand for the development of an adhesive tape having excellent cutting properties.

[0004]

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and has an excellent cutting property, and does not generate burrs or chips at the time of cutting. A semiconductor adhesive film, a lead frame and a semiconductor using the film are provided. Provide equipment.

[0005]

The inventor of the present invention has conducted intensive studies on the relationship between burrs generated during cutting and the properties of the adhesive film. As a result, the use of a polyamideimide resin having a specific composition in the adhesive layer has improved reliability. The present inventors have found that the occurrence of burrs at the time of cutting can be suppressed without impairing the quality, and completed the present invention based on this finding. That is, the present invention
The present invention relates to an adhesive film for semiconductors having a polyamideimide resin layer having a logarithmic viscosity of 0.1 dl / g or more and a copolymer of dimer acid on one or both surfaces of a support film. In a preferred embodiment of the present invention, the copolymerization amount of the dimer acid in the polyamideimide resin is 1% by weight or more. Further, the polyamideimide resin has cyclohexanedicarboxylic acid in the acid component. Further, the polyamide imide resin contains a dicyclohexylmethane group and / or an isophorone group as an amine residue. And the support film is a polyimide film or a polyester film.

Further, the present invention relates to a lead frame to which the above-mentioned adhesive film for a semiconductor is attached. Further, the present invention relates to a semiconductor device in which a lead frame and a semiconductor element are adhered via the above-mentioned adhesive film for a semiconductor.

[0007]

Next, the adhesive film for semiconductor of the present invention will be described in detail. As the support film used in the present invention, polyamide, polyimide, polyester, polycarbonate, polyarylate, polyetheretherketone, polyphenylene sulfide, polysulfone, etc. are used, but polyimide or polyester is preferred from the viewpoint of heat resistance, insulation, price and the like. . The thickness of the support film is preferably 5 to 200 μm,
75 μm is more preferred. The support film is usually used as it is, but may be one which has been subjected to a surface treatment in order to improve the adhesiveness with the adhesive layer. Examples of the surface treatment of the support film include physical processing such as sand mat processing and corona processing, and chemical processing of applying a solution of a silane coupling agent, a polyester resin, a polyurethane resin, an acrylic resin, or the like, and any method may be used. Absent.

A polyamideimide resin obtained by copolymerizing dimer acid is used for the adhesive layer of the adhesive film for a semiconductor of the present invention. As described in JP-A-10-158599, there is a possibility that a normal polyamideimide resin can be used as an adhesive layer of an adhesive film for a semiconductor, but the laminating temperature exceeds 300 ° C. and burrs are generated at the time of slitting. There was a problem that was severe. In the present invention, the dimer acid is copolymerized with the polyamide-imide resin, thereby lowering the glass transition temperature and lowering the bonding temperature, and also lowering the elastic modulus and improving the adhesiveness to the support film to form the slit. The occurrence of burrs at the time was able to be suppressed.

The polyamideimide resin obtained by copolymerizing the dimer acid of the present invention can be easily produced by dissolving trimellitic anhydride (acid chloride), diamine or diisocyanate and dimer acid in a polymerization solvent and stirring with heating. can do.

[0010] The polymerization temperature is usually in the range of 50 ° C to 220 ° C, preferably 80 ° C to 200 ° C.

In the synthesis by the diisocyanate method, amines such as triethylamine, lutidine, picoline and triethylenediamine, lithium methoxide, and the like are used to promote the reaction between isocyanate and active hydrogen in the acid component.
Sodium methoxide, potassium butoxide, potassium fluoride, alkali metal such as sodium fluoride, alkaline earth metal compounds, or cobalt, titanium,
The reaction may be performed in the presence of a catalyst of a metal such as tin or zinc or a metalloid compound.

Trimellitic anhydride is used as an acid component used for synthesizing the polyamideimide obtained by copolymerizing the dimer acid of the present invention, and a part of it is replaced with another polycarboxylic acid and their anhydrides. be able to. As polyvalent carboxylic anhydride, pyromellitic anhydride,
Benzophenone tetracarboxylic anhydride, 3, 3 ',
4,4 ′ diphenylsulfonetetracarboxylic anhydride,
3,3 ′, 4,4 ′ diphenyltetracarboxylic anhydride, 4,4 ′ oxydiphthalic anhydride, ethylene glycol bisanhydrotrimellitate, propylene glycol bisanhydrotrimellitate, 1,4 butanediol bisan Hydrotrimellitate, hexamethylene glycol bisanhydrotrimellitate, polyethylene glycol bisanhydrotrimellitate, polypropylene glycol bisanhydrotrimellitate and the like, among which pyromellitic anhydride and ethylene glycol Bisanhydrotrimellitate is preferred in terms of flexibility, adhesion, polymerizability and cost.

The aliphatic and alicyclic dicarboxylic acids include
Oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, bimeric acid, suberic acid, azelaic acid, sebacic acid, undecandioic acid, dodecandioic acid, tridecandioic acid,
Examples thereof include cyclohexanedicarboxylic acid and acid chlorides thereof. Of these, cyclohexanedicarboxylic acid is preferable from the viewpoint of polymerizability, solubility, transparency, heat resistance, and chemical resistance.

As the aromatic dicarboxylic acid, isophthalic acid, 5-tert-butyl-1,3-benzenedicarboxylic acid, terephthalic acid, diphenylmethane-4,4'dicarboxylic acid, diphenylmethane-2,4-dicarboxylic acid,
Diphenylmethane-3,4 dicarboxylic acid, diphenylmethane-3,3 'dicarboxylic acid, 1,2 diphenylethane-4,4' dicarboxylic acid, diphenylethane-2,4 dicarboxylic acid, diphenylethane-3,4 dicarboxylic acid, diphenyl Ethane-3,3'-dicarboxylic acid, 2,2'-bis- (4-carboxyphenyl) propane, 2- (2-carboxyphenyl) -2- (4-carboxyphenyl) propane, 2- (3-carboxyphenyl)- 2- (4-carboxyphenyl) propane,
Diphenyl ether-4,4 'dicarboxylic acid, diphenyl ether-2,4 dicarboxylic acid, diphenyl ether-3,4 dicarboxylic acid, diphenyl ether-3,3' dicarboxylic acid, diphenyl sulfone 4,4 '
Dicarboxylic acid, diphenyl sulfone-2,4 dicarboxylic acid, diphenyl sulfone-3,4 dicarboxylic acid, diphenyl sulfone-3,3 'dicarboxylic acid, benzophenone-4,4' dicarboxylic acid, benzophenone-3
3′-dicarboxylic acid, pyridine-2,6-dicarboxylic acid, naphthalenedicarboxylic acid, bis-[(4-carboxy) phthalimide] -4,4′-diphenyl ether,
Bis [(4-carboxy) phthalimide] -α, α '
Meta-xylene and the like and their acid chlorides, preferably isophthalic acid and terephthalic acid.

The tricarboxylic acids include butane-1,
Examples thereof include 2,4-tricarboxylic acid, naphthalene 1,2,4-tricarboxylic acid, and trimellitic acid, and acid chlorides thereof.

The tetracarboxylic acids include butane-1,
2,3,4-tetracarboxylic acid, pyromellitic acid, benzophenone 3,3 ′, 4,4′-tetracarboxylic acid, diphenyl ether-3,3 ′, 4,4′-tetracarboxylic acid, diphenyl ether-3,3 ′, 4,4 ′ -Tetracarboxylic acid, biphenyl-3,3 ', 4,4'-tetracarboxylic acid, naphthalene-2,3,6,7-tetracarboxylic acid, naphthalene-1,2,4,5-tetracarboxylic acid, naphthalene-1,4,5,8-tetracarboxylic acid, etc. Is mentioned.

These acid components can be used alone or as a mixture of two or more types together with trimellitic anhydride.

On the other hand, examples of the amine component include diamine and diisocyanate, which are not particularly limited in the present invention. Specifically, m-phenylenediamine, p-phenylenediamine, oxydianiline, methylenediamine, hexafluoroisopropylene Lidenediamine, diamino m-xylylene, diamino-p-xylylene, 1,4
Naphthalenediamine, 1,5 naphthalenediamine,
2,6 naphthalenediamine, 2,7 naphthalenediamine, 2,2'-bis (4-aminophenyl) propane, 2,2'-bis (4-aminophenyl) hexafluoropropane, 4,4'diaminodiphenylsulfone, 4,4 'Diaminodiphenyl ether, 3, 3'
Diaminodiphenyl sulfone, 3,3 'diaminodiphenyl ether, 3,4 diaminobiphenyl, 4,4'
Diaminobenzophenone, 3,4 diaminodiphenyl ether, isopropylidene dianiline, 3,3 'diaminobenzophenone, o-tolidine, 2,4-tolylenediamine, 1,3-bis- (3-aminophenoxy) benzene, 1,4-bis- (4-aminophenoxy) benzene, 1,3-bis- (4-aminophenoxy) benzene, 2,2-bis- [4- (4-aminophenoxy) phenyl] propane, bis- [4- (4-aminophenoxy) phenyl] sulfone , Bis- [4- (3-aminophenoxy) phenyl] sulfone, 4,4'-bis (4
Aromatic diamines such as -aminophenoxy) biphenyl, 2,2'-bis- [4- (4-aminophenoxy) phenyl] hexafluoropropane, 4,4'diaminodiphenylsulfide, 3,3'diaminodiphenylsulfide, ethylenediamine , Propylene diamine,
Examples thereof include aliphatic diamines such as tetramethylene diamine and hexamethylene diamine, and alicyclic diamines such as isophorone diamine and 4,4 ′ diaminodicyclohexylmethane. Further, the amino group of the above diamine is replaced with -N = C =
Isocyanates replaced by O groups are mentioned. Among these, 4,4 ′ diaminodiphenylmethane (4,
A single or a mixture of 4 'diphenylmethane diisocyanate), 4,4' diaminodicyclohexyl methane (4, 4 'dicyclohexyl methane diisocyanate) and / or isophorone diamine (isophorone diisocyanate) is preferred from the viewpoint of reactivity, cost, solubility and flexibility. . The above amine components may be used alone or as a mixture of two or more.

The above-mentioned acid component and amine component are usually synthesized in an equimolar mixture, but if necessary, one component may be slightly increased or decreased.

The present invention is characterized in that a part of the acid component is replaced with dimer acid for the purpose of further improving the flexibility and adhesiveness of the polyamideimide resin and suppressing the generation of burrs at the time of slitting.

Dimer acid is originally a mixture of a plurality of components containing unsaturated groups, and some of them do not contain unsaturated groups. Several types of dimer acids are commercially available based on their components and configurations, but are not particularly limited in the present invention. The copolymerization amount of dimer acid is 1% by weight or more, preferably 5% by weight or more. If the copolymerization amount is 1% by weight or less, the flexibility, adhesiveness, and burr generation at the time of slitting, which are objects of the present invention, are not sufficiently improved.

The solvent used for the polymerization of the polyamideimide resin of the present invention includes N-methyl-2-pyrrolidone,
Amide solvents such as N, N'-dimethylacetamide, N, N'-dimethylformamide and dimethylimidazolidinone; sulfur solvents such as dimethyl sulfoxide and sulfolane; nitro solvents such as nitromethane and nitroethane; diglyme and tetrahydrofuran. In addition to ether solvents, ketone solvents such as cyclohexanone and methyl ethyl ketone, nitrile solvents such as acetonitrile and propionitrile, solvents having a relatively high dielectric constant such as γ-butyrolactone and tetramethylurea, and the like. In view of the polymerizability, N-methyl-2-pyrrolidone,
Dimethylimidazolidinone and γ-butyrolactone are preferred. These can be used alone or as a mixed solvent,
Further, a solvent having a relatively low dielectric constant such as xylene or toluene may be used as a mixture.

The logarithmic viscosity of the thus obtained polyamideimide resin is 0.1 d in terms of toughness and flexibility.
l / g or more, preferably 0.2 dl / g or more is required. If the logarithmic viscosity is 0.1 dl / g or less, the object of the present invention cannot be achieved because the resin becomes brittle even if it is flexible.

The polyamide-imide resin obtained by copolymerizing dimer acid according to the present invention can be coated with a polymerization solution as it is on a support film. However, the polyamide-imide resin is replaced with a general-purpose solvent having a low boiling point and easy drying. You can also.

The method for solvent replacement is not particularly limited, and a known technique such as dry spinning and wet spinning may be applied.
For example, in the case of a wet method, a polyamideimide resin solution is extruded from a nozzle into a coagulation bath composed of a non-solvent of the polyamideimide resin of the present invention, which is miscible with the above-mentioned polymerization solvent, preferably water. After drying,
What is necessary is just to re-dissolve in a low boiling point general purpose solvent.

The low-boiling general-purpose solvent varies depending on the polymer composition, but includes ketones such as cyclohexanone, cyclopentanone, methyl ethyl ketone and methyl isobutyl ketone, ethers such as tetrahydrofuran and dioxane, methyl alcohol, ethyl alcohol and isopropyl alcohol. , Alcohols such as butyl alcohol, benzene, toluene, one or a mixture of two or more hydrocarbons such as xylene, and the like, and may be selected according to the purpose, but such as price and solubility, safety and the like The most preferable from the viewpoint is a mixed solvent of the above alcohols and hydrocarbons.

The polyamideimide resin obtained by copolymerizing the dimer acid of the present invention exhibits excellent heat resistance, adhesiveness, chemical resistance, flexibility and the like even when used as it is, and is suitable for an adhesive film for semiconductors. If necessary, acrylic resin, polyester resin, epoxy resin, melamine resin, polyfunctional isocyanate compound, carbon particles, titanium oxide, silicon oxide, inorganic filler such as calcium carbonate, dye, pigment,
An antistatic agent such as a surfactant may be blended within a range that does not impair the intrinsic performance of the polyamideimide resin.

The method for producing an adhesive film for a semiconductor according to the present invention is as follows. The polyamide-imide resin solution obtained by copolymerizing the dimer acid is coated on a polyimide or polyester support film and dried to form a two- or three-layer film adhesive. To

The coating method is not particularly limited,
For example, a reverse roll coater, a gravure roll coater, a comma coater, a slit die coater, a bar coater and the like are used. After coating, the solvent is removed by drying to form an adhesive layer. The thickness of the adhesive layer is 1 to 75
μm is preferable, and 10 to 30 μm is more preferable. The film obtained in this manner has a structure as shown in FIG. This film can be used as an adhesive film for a semiconductor. In FIG. 1, 1 is a support film, and 2 is an adhesive layer.

Further, when the adhesive film for a semiconductor of the present invention is used, a lead frame with an adhesive excellent in reliability can be easily manufactured with good workability and yield. For example, a film obtained by punching out or cutting out the above-mentioned film to a predetermined size is put on a lead fill at 150 ° C. to 300 ° C., 5 to
There is a method of pressing at 100 kg / cm ² for 1 second to 5 minutes.

Further, when the film of the present invention is used, a semiconductor having a high capacity and excellent reliability can be easily manufactured with good workability and yield. For example, the above-mentioned film is punched or cut into a predetermined size, and is sandwiched between a lead frame and a semiconductor element.
A semiconductor device can be manufactured by heating and pressing at 100 kg / cm ² for 1 second to 5 minutes, bonding a lead frame and a semiconductor element with a gold wire or the like, transfer molding with a molding material such as epoxy resin, and sealing. it can.

[0032]

The present invention will be described below in more detail with reference to Examples, but the present invention is not limited by these Examples. The properties of the polymers in the examples were measured by the following methods.

1. Logarithmic viscosity; 100 g of polymer 0.5 g
Dissolved in ml of N-methyl-2-pyrrolidone and measured by Ubbelohde viscosity tube.

(Examples 1 to 4) In a reaction vessel, trimellitic anhydride (TMA), diphenylmethane diisocyanate (MDI), dimer acid (Pripol 1030 :)
Was charged according to the formulation shown in Table 1, N-methyl-2-pyrrolidone (NMP) was further charged so as to have a polymer concentration of 40%, and reacted at 120 ° C. for about 1 hour.
And reacted for 5 hours. While cooling, N-methyl 2-pyrrolidone was further added to obtain a polymer solution having a solid content of 20%. Table 1 shows the physical properties of this polymer.
These polymer solutions were coated on both sides of a 50 μm polyimide film (UPILEX S, manufactured by Ube Industries) with a dry film thickness of 2 μm.
Coated to 5μ, dried at 100 ° C for 10 minutes,
Heating was sequentially performed at 0 ° C. for 1 hour to obtain an adhesive film having the structure shown in FIG. The obtained adhesive film was slit to a width of 5 mm, and the ends were observed with a microscope. As a result, no burrs were found and the cutability was good. Further, the film was punched into a strip shape, and placed on a lead frame made of an iron-nickel alloy having a thickness of 0.2 mm so that inner leads having a 0.2 mm width and a 0.2 mm width were in contact with each other.
When pressed and pressed for 5 seconds at a pressure of Kg / cm ² ,
Since there were no burrs, a good bonding state was obtained without burrs entering between the adhesive film and the inner leads. A semiconductor element is placed on the adhesive layer surface of the lead frame.
After thermocompression bonding at 00 ° C. and a pressure of 30 Kg / cm ² for 5 seconds, the lead frame and the semiconductor element were wire-bonded with a gold wire, transfer-molded with an epoxy resin molding material, and molded. In this semiconductor device, there was no adhesion failure due to burrs between the adhesive film and the inner lead and between the adhesive film and the semiconductor element, and the wire bonding property was good.

(Example 5) Polymerization was carried out with the same raw material composition as in Example 3 except that the amount of trimellitic anhydride in Example 3 was changed to 1.2 times. Table 1 shows the physical properties of this polymer.
Further, an adhesive film for a semiconductor, a lead frame and a semiconductor device using the same were produced in the same manner as in Example 1 using this polymer. The wire bonding properties were also good.

Comparative Example 1 192 g of trimellitic anhydride and diphenylmethane diisocyanate 2 were placed in a reaction vessel.
After charging 50 g and 531 g of N-methyl-2-pyrrolidone and reacting them under the same conditions as in Example 1, 885 g of N
-Methyl-2-pyrrolidone to give a solids concentration of 20
% Polymer solution was obtained. Table 1 shows the physical properties of this polymer. Using this polymer, an adhesive film for a semiconductor, a lead frame and a semiconductor device using the same were produced in the same manner as in Example 1, but the adhesiveness to the support film and the semiconductor element was insufficient, so that a flash was formed when slitting the adhesive film. There has occurred.

(Comparative Example 2) Raw materials were charged into a reaction vessel according to the same formulation as in Example 3, and reacted at 80 ° C for about 1 hour.
-Butanol / N-methyl-2-pyrrolidone (10/9
(0% by weight) was added to stop the reaction to obtain a polymer solution having a solid content of 20%. Table 1 shows the physical properties of this polymer. Using this polymer solution, an adhesive film for a semiconductor was prepared in the same manner as in Example 1, but the polymer was brittle due to its low molecular weight, the adhesiveness to the support film was insufficient, and burrs occurred during slitting of the adhesive film.

Example 6 58 g of TMA was placed in a reaction vessel.
52 g of 1,4-cyclohexanedicarboxylic acid, 229 g of isophorone diisocyanate, 1.16 of potassium fluoride
g, 230 g of Pripol 1030 and 481 g of γ-butyrolactone, and the mixture was reacted at 120 ° C. for 1.5 hours, then heated to 180 ° C. and reacted for about 3 hours. While cooling, 641 g of NMP was added to obtain a polymer solution having a solid content of 30%. This polymer solution was poured into a large amount of water to coagulate, sufficiently washed with water, and dried. The content of the dimer acid in the dried polymer was 48% by weight, and the logarithmic viscosity was 0.53 dl / g. The dried polymer was dissolved in a mixed solvent of ethanol / toluene (50/50 weight ratio) so that the solid content concentration was 25%. Using this polymer solution, an adhesive film, a lead frame and a semiconductor device using the adhesive film were produced in the same manner as in Example 1. The obtained adhesive film had a good slit property, a good adhesive property with a semiconductor element, and a good wire bonding property.

Example 7 An ethanol / toluene solution of the dimer acid copolymerized polyamideimide resin used in Example 6 was applied to both sides of a polyester film (A-4100 manufactured by Toyobo) so that the dry film thickness was 25 μm. After drying at 100 ° C. for 10 minutes, an adhesive film having the structure shown in FIG. 1 was prepared. When the slit property of this adhesive film and the manufacture of a lead frame and a semiconductor device using this adhesive film were performed in the same manner as in Example 1, the adhesiveness between the adhesive film and the inner lead and between the semiconductor elements was good, and the wire bonding was good. It showed heat resistance to endure.

Comparative Example 3 In a reaction vessel, 96 g of trimellitic anhydride and 86 g of cyclohexanedicarboxylic acid were added.
g, 229 g of isophorone diisocyanate, 1.16 g of potassium fluoride and 323 g of γ-butyrolactone, and a polyamideimide resin was synthesized under the same conditions as in Example 6.
Coagulation in water, washing, drying, ethanol / toluene (5
(0/50% by weight). An attempt was made to prepare an adhesive film using this polymer solution under the same conditions as in Example 7, but since this polymer did not adhere to the polyester film, it was easily peeled off at the time of slitting.

[0041]

[Table 1]

[0042]

The polyamide-imide resin obtained by copolymerizing the dimer acid of the present invention is excellent in heat resistance, adhesion to a support and a film, and has no burr. By using this film, a highly reliable lead frame and semiconductor device can be manufactured.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of one example of an adhesive film for a semiconductor according to the present invention.

[Explanation of symbols]

 1 adhesive layer 2 support film

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4J040 EH031 JA09 LA01 NA20 4J043 PA02 PA04 QB15 QB23 QB26 QB31 QB32 QB33 QB58 RA05 RA06 RA34 RA35 RA39 SA06 SA11 SB01 SB02 TA11 TA12 TA13 TA21 TA22 TA25 TA26 TB01 TB02 UA04121 UA UA132 UA141 UA151 UA261 UA262 UA362 UA432 UA662 UA672 UA761 UA762 UA772 UB011 UB012 UB021 UB022 UB061 UB082 UB121 UB122 UB131 UB152 UB172 UB281 UB301 UB302 UB401 UB402 VA011 VA012 VA021 VA022 VA031 VA041 VA042 VA051 VA052 VA061 VA062 VA071 VA072 VA081 VA082 VA091 VA092 WA05 WA23 XA03 XA14 XA15 XA16 XA18 XA19 XB12 XB17 XB19 XB20 XB21 ZA02 ZB01 ZB11

Claims (7)

[Claims] 1. An adhesive film for a semiconductor having a polyamideimide resin layer having a logarithmic viscosity of 0.1 dl / g or more and a copolymer of dimer acid as an adhesive layer on one or both surfaces of a support film. 2. The adhesive film for a semiconductor according to claim 1, wherein the copolymerization amount of the dimer acid in the polyamideimide resin is 1% by weight or more. 3. The adhesive film for a semiconductor according to claim 1, wherein the polyamideimide resin has cyclohexanedicarboxylic acid in an acid component. 4. The adhesive film for a semiconductor according to claim 1, wherein the polyamideimide resin contains a dicyclohexylmethane group and / or an isophorone group as an amine residue. 5. The adhesive film for a semiconductor according to claim 1, wherein the support film is a polyimide film or a polyester film. 6. A lead frame to which the semiconductor adhesive film according to claim 1 is attached. 7. A semiconductor device comprising a lead frame and a semiconductor element bonded to each other via the semiconductor adhesive film according to claim 1.