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JP2001076870A - Method for forming display pattern of organic el element - Google Patents

Method for forming display pattern of organic el element

Info

Publication number
JP2001076870A
JP2001076870A JP25461099A JP25461099A JP2001076870A JP 2001076870 A JP2001076870 A JP 2001076870A JP 25461099 A JP25461099 A JP 25461099A JP 25461099 A JP25461099 A JP 25461099A JP 2001076870 A JP2001076870 A JP 2001076870A
Authority
JP
Japan
Prior art keywords
organic
pattern
light emitting
display pattern
emitting layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25461099A
Other languages
Japanese (ja)
Inventor
Michio Kano
教夫 加納
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor Corp
Original Assignee
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp
Priority to JP25461099A priority Critical patent/JP2001076870A/en
Publication of JP2001076870A publication Critical patent/JP2001076870A/en
Pending legal-status Critical Current

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  • Electroluminescent Light Sources (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a method for forming a display pattern of an organic EL element, allowing the formation of various display patterns in simple processes. SOLUTION: After a positive electrode 23 and a luminescent layer 221 are layered in sequence on a transparent substrate 1 or a negative electrode is further layered thereon, a high energy beam (electron beam of 1 keV or more) is applied to a predetermined portion of the luminous layer 221 for deenergizing the luminescence of the portion to form a luminescence deenergized portion 221b. With the existance of a portion which is a luminescence deenergized portion 221a of the luminescent layer 221, where no high energy beam is radiated, and which is located between the positive electrode 23 and the negative electrode, a double-circular display pattern 6 is formed with an internal circular pattern 62 independently located inside an external circular pattern 61.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、有機エレクトロル
ミネセンス(EL)素子の表示パターン(発光パター
ン)を形成する方法に関する。本発明は、固定パターン
による発光表示を行う有機EL素子等に利用される。
[0001] 1. Field of the Invention [0002] The present invention relates to a method for forming a display pattern (light emission pattern) of an organic electroluminescence (EL) element. INDUSTRIAL APPLICATION This invention is utilized for the organic EL element etc. which perform the light emission display by a fixed pattern.

【0002】[0002]

【従来の技術】従来、固定パターンによる発光表示を行
う有機EL素子において表示パターンを形成する方法と
しては、陽極及び陰極のうちの一方の電極及び発光層を
ベタに形成し、他方の電極を表示パターンの形状に形成
することにより、表示パターンに相当する部分の発光層
のみに電圧を印加して発光させる方法が知られている。
また、特開平10−284254号公報には、表示パタ
ーン形状にくり抜かれた貫通孔を有するようにパターン
化された絶縁層を両電極の間に設け、この絶縁層により
発光パターン以外の部分が発光しないようにした有機E
L素子が開示されている。
2. Description of the Related Art Conventionally, as a method of forming a display pattern in an organic EL device which performs light-emitting display by a fixed pattern, one electrode and a light-emitting layer of an anode and a cathode are formed solid, and the other electrode is displayed. There is known a method in which a voltage is applied to only a portion of a light emitting layer corresponding to a display pattern to emit light by forming the light emitting layer in a pattern shape.
In Japanese Patent Application Laid-Open No. 10-284254, an insulating layer patterned so as to have a through hole cut out in a display pattern shape is provided between both electrodes, and a portion other than the light emitting pattern is illuminated by the insulating layer. Organic E not to be
An L element is disclosed.

【0003】[0003]

【発明が解決しようとする課題】上記従来技術はいずれ
も電極又は絶縁層を所定のパターンに形成する工程を必
要とする。この方法としては、蒸着マスクを用いる方
法、フォトリソグラフィによる方法等がある。しかし、
このうち蒸着マスクを用いる方法によると、環状のパタ
ーンの内側に独立して位置する別のパターンを有するパ
ターン(例えば二重丸形状のパターン)等を形成する場
合には、一枚の蒸着マスクで形成することができないた
め、複数枚の蒸着マスクを用いて複数回の蒸着工程を行
わなくてはならない。一方、フォトリソグラフィによる
方法は、適用するパターン形状の自由度は高いが、レジ
ストパターン形成、露光、エッチングなど多くの工数を
必要とし、またレジスト残渣により発光欠陥が生じる恐
れがある。
All of the above prior arts require a step of forming an electrode or an insulating layer in a predetermined pattern. As this method, there are a method using a deposition mask, a method using photolithography, and the like. But,
According to the method using an evaporation mask, when a pattern having another pattern independently positioned inside the annular pattern (for example, a double-circle pattern) or the like is formed, one evaporation mask is used. Since it cannot be formed, a plurality of evaporation steps must be performed using a plurality of evaporation masks. On the other hand, the photolithography method has a high degree of freedom in the pattern shape to be applied, but requires many man-hours such as resist pattern formation, exposure, and etching, and may cause a light emission defect due to a resist residue.

【0004】本発明の目的は、簡単な工程によって様々
な表示パターンを形成することができる有機EL素子の
表示パターン形成方法を提供することにある。
An object of the present invention is to provide a method for forming a display pattern of an organic EL device, which can form various display patterns by a simple process.

【0005】[0005]

【課題を解決するための手段】前記課題を解決するため
に、本第1発明の有機EL素子の表示パターン形成方法
は、発光層の所定部分に高エネルギー線を照射して当該
部分の発光を失活させることを特徴とする。
In order to solve the above-mentioned problems, the present invention provides a method for forming a display pattern of an organic EL device, which comprises irradiating a predetermined portion of a light emitting layer with a high energy ray to emit light from the portion. It is characterized by deactivating.

【0006】前記高エネルギー線としては、電子線、X
線、紫外線、レーザ光等を用いることができる。このう
ち、照射効率、照射精度及び取り扱いの容易性から、電
子線を用いることが特に好ましい。この電子線の強度
は、第3発明のように1keV以上であることが好まし
く、1keV〜10keVの範囲がより好ましく、1k
eV〜2keVの範囲が更に好ましい。
The high energy beam includes an electron beam, X
Light, ultraviolet light, laser light, or the like can be used. Among them, it is particularly preferable to use an electron beam in terms of irradiation efficiency, irradiation accuracy, and ease of handling. The intensity of the electron beam is preferably 1 keV or more as in the third invention, more preferably in the range of 1 keV to 10 keV, and more preferably 1 kV.
The range of eV to 2 keV is more preferable.

【0007】前記高エネルギー線の照射は、第2発明の
ように、有機EL素子の製造工程において透明基板上に
陽極及び前記発光層を順次積層した後に行ってもよく、
又は更に陰極を積層した後に行ってもよい。また、発光
層の表示側(透明基板側)から高エネルギー線を照射し
てもよく、表示側とは反対側(陰極側)から照射しても
よい。高エネルギー線を照射する方法としては、細く絞
った高エネルギー線を走査して描画する方法、高エネル
ギー線を透過しない材料で作成された照射マスクを用い
る方法、これらを併用する方法等が挙げられる。
The irradiation of the high energy beam may be performed after the anode and the light emitting layer are sequentially laminated on a transparent substrate in a process of manufacturing an organic EL device as in the second invention.
Alternatively, it may be performed after further laminating the cathode. In addition, high energy rays may be irradiated from the display side (transparent substrate side) of the light emitting layer, or may be irradiated from the side opposite to the display side (cathode side). Examples of a method of irradiating a high energy ray include a method of drawing by scanning a finely squeezed high energy ray, a method of using an irradiation mask made of a material that does not transmit the high energy ray, a method of using these in combination, and the like. .

【0008】[0008]

【発明の実施の形態】以下、実施例により本発明を更に
具体的に説明する。 (1)有機EL素子の構成 本発明の方法により表示パターンが形成して得られた有
機EL素子を図6に示す。この有機EL素子は、透明基
板1と、この透明基板1上に形成された有機EL積層膜
2と、接着部5により透明基板1に接合されて有機EL
積層膜2を封止する封止部材4とからなる。発光時に
は、図7に示すように、外円パターン61と内円パター
ン62とからなる二重丸形状の表示パターン6を表示す
る。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described more specifically by way of examples. (1) Configuration of Organic EL Element FIG. 6 shows an organic EL element obtained by forming a display pattern by the method of the present invention. The organic EL element is joined to a transparent substrate 1, an organic EL laminated film 2 formed on the transparent substrate 1, and
And a sealing member 4 for sealing the laminated film 2. At the time of light emission, as shown in FIG. 7, a double circular display pattern 6 composed of an outer circle pattern 61 and an inner circle pattern 62 is displayed.

【0009】透明基板1は、厚さ1.1mmのソーダ石
灰ガラスからなる。透明基板1としては、ソーダ石灰ガ
ラス等のガラス類の他、樹脂、石英等の透明材料からな
る板状物、シート状物、或いはフィルム状物等を用いる
ことができる。このうち、ガラス板を用いることが特に
好ましい。
The transparent substrate 1 is made of soda-lime glass having a thickness of 1.1 mm. As the transparent substrate 1, in addition to glasses such as soda-lime glass, a plate, sheet, or film made of a transparent material such as resin and quartz can be used. Among them, it is particularly preferable to use a glass plate.

【0010】有機EL積層膜2は、透明基板1上に、I
TOからなる陽極21、有機EL膜22及びアルミニウ
ム合金からなる陰極23を積層して形成されている。有
機EL膜22は、陰極23側から順に、LiFからなる
電子注入層、アルミキノリウム錯体からなる電子輸送
層、アルミキノリウム錯体をホストとしキナクリドンを
ドーピングした発光層221、TPTE(トリフェニル
アミンの4量体)からなる正孔輸送層(図示せず)、及
び銅フタロシアニン錯体からなる正孔注入層(図示せ
ず)を積層してなる。尚、有機EL膜22は、発光層2
21のみからなってもよく、発光層に加えて正孔輸送層
及び/又は電子輸送層を有してもよく、更に正孔注入層
及び/又は電子注入層を有してもよい。図1及び図3〜
6では模式的に、有機EL膜22として発光層221の
みを示している。
An organic EL laminated film 2 is formed on a transparent substrate 1
An anode 21 made of TO, an organic EL film 22, and a cathode 23 made of an aluminum alloy are laminated. The organic EL film 22 includes, in order from the cathode 23 side, an electron injection layer made of LiF, an electron transport layer made of an aluminum quinolium complex, a light emitting layer 221 doped with quinacridone using an aluminum quinolium complex as a host, and TPTE (triphenylamine A hole transport layer (not shown) composed of a tetramer) and a hole injection layer (not shown) composed of a copper phthalocyanine complex are laminated. Note that the organic EL film 22 is
21 and may have a hole transport layer and / or an electron transport layer in addition to the light emitting layer, and may further have a hole injection layer and / or an electron injection layer. 1 and 3 to 3
6, only the light emitting layer 221 is schematically shown as the organic EL film 22.

【0011】そして、発光層221は、発光機能を備え
る発光活性部221aと、後述のように電子線を照射す
ることにより発光を失活させられた発光失活部221b
とからなる。この発光活性部221aのうちITO電極
21及び陰極23に挟まれた部分(電圧印加により発光
しうる部分)により、外円パターン61と、外円パター
ン61の内側に位置し外円パターン61からは独立した
内円パターン62と、からなる二重丸形状の表示パター
ン6が形成されている。尚、陽極21、陰極23及び有
機EL膜22の各層を構成する材料としては、上記以外
に種々の公知材料を用いることができる。また、これら
の層を形成する方法は、真空蒸着法、スピンコート法、
キャスト法、スパッタリング法、LB法等の公知の方法
から適宜選択すればよい。
The light-emitting layer 221 includes a light-emitting active portion 221a having a light-emitting function and a light-emitting inactivating portion 221b having light emission deactivated by irradiating an electron beam as described later.
Consists of A portion (a portion that can emit light by applying a voltage) between the ITO electrode 21 and the cathode 23 in the light emitting active portion 221a causes the outer circular pattern 61 to be positioned inside the outer circular pattern 61 and from the outer circular pattern 61 A double-circle display pattern 6 including an independent inner circle pattern 62 is formed. In addition, as a material constituting each layer of the anode 21, the cathode 23, and the organic EL film 22, various known materials other than those described above can be used. In addition, methods for forming these layers include a vacuum evaporation method, a spin coating method,
What is necessary is just to select suitably from well-known methods, such as a casting method, a sputtering method, and LB method.

【0012】封止部材4としては、ステンレス、アルミ
ニウム又はその合金等の金属類、ソーダ石灰ガラス、珪
酸塩ガラス等のガラス類、アクリル系樹脂、スチレン系
樹脂等の樹脂類等の一種又は二種以上からなるものを使
用することができる。本実施例においては、封止部材4
として厚さ1.1mmのソーダ石灰ガラスを用いてい
る。この封止部材4と透明基板1との接合は、エポキシ
樹脂系接着剤、アクリレート系接着剤、熱硬化性樹脂、
光硬化性樹脂等の接着剤を用いて行うことができる。こ
のうち、水分等の透過性の低い硬化物を形成するものが
好ましい。また、素子への熱ストレス低減と速硬化性に
優れることから、光硬化性樹脂が好ましく用いられる。
本実施例においては、電気絶縁性の光硬化性樹脂からな
る接着剤を硬化させて形成された接着部5によって、封
止部材4の周縁部41が透明基板1に接合され、これに
より有機EL積層膜2が気密に封止されている。
As the sealing member 4, one or two kinds of metals such as stainless steel, aluminum or alloy thereof, glasses such as soda lime glass and silicate glass, and resins such as acrylic resin and styrene resin are used. What consists of the above can be used. In this embodiment, the sealing member 4
Is a soda-lime glass having a thickness of 1.1 mm. The joining between the sealing member 4 and the transparent substrate 1 is performed by using an epoxy resin adhesive, an acrylate adhesive, a thermosetting resin,
It can be performed using an adhesive such as a photocurable resin. Among them, those that form a cured product having low permeability to moisture and the like are preferable. Further, a photocurable resin is preferably used because it is excellent in the reduction of thermal stress to the element and the rapid curability.
In the present embodiment, the peripheral portion 41 of the sealing member 4 is joined to the transparent substrate 1 by an adhesive portion 5 formed by curing an adhesive made of an electrically insulating photocurable resin, thereby forming an organic EL. The laminated film 2 is hermetically sealed.

【0013】(2)有機EL素子の製造方法 上記構成の有機EL素子は、以下のようにして製造する
ことができる。透明基板1上に、陽極21及び電極取出
線23a用のITO膜を形成し(図2)、更に発光層2
21等からなる有機EL膜22を成膜する(図3)。こ
の段階では、発光層221は全面が発光機能を有する
(即ち、まだ発光失活部221bが形成されていな
い)。次いで、図1に示すように、透明基板1とは反対
側から、陽極21上に位置する発光層221であって且
つ表示パターン6以外の部分に、強度1keVの電子線
を走査方式により照射する。これにより、電子線が照射
された部分の発光層221は発光機能を失って発光失活
部221bに変化する。電子線が照射されなかった部分
は発光活性部221aとなる。図4は図1のX方向矢視
図であって、網掛けの範囲は、電子線照射により形成さ
れた発光失活部221bを表す。
(2) Method of Manufacturing Organic EL Device The organic EL device having the above structure can be manufactured as follows. An ITO film for the anode 21 and the electrode lead 23a is formed on the transparent substrate 1 (FIG. 2).
Then, an organic EL film 22 made of a material such as 21 is formed (FIG. 3). At this stage, the entire surface of the light emitting layer 221 has a light emitting function (that is, the light emitting deactivating portion 221b has not been formed yet). Next, as shown in FIG. 1, from the side opposite to the transparent substrate 1, the light emitting layer 221 located on the anode 21 and a portion other than the display pattern 6 are irradiated with an electron beam having an intensity of 1 keV by a scanning method. . Thereby, the light emitting layer 221 in the portion irradiated with the electron beam loses the light emitting function and changes to the light emitting inactivating portion 221b. The portion not irradiated with the electron beam becomes the light emitting active portion 221a. FIG. 4 is a view taken in the direction of the arrow X in FIG. 1, and the hatched area indicates the light emission deactivating portion 221 b formed by electron beam irradiation.

【0014】その後、図5に示すように、発光層221
の上から陰極23用のアルミニウム合金膜を成膜し、更
に封止部材4を接合して、図6に示す有機EL素子が得
られる。この有機EL素子に電圧を印加すると、発光活
性部221aのうち陽極21と陰極23とに挟まれた部
分が発光して、外円パターン61と内円パターン62と
からなる表示パターン6が表示される。
Thereafter, as shown in FIG.
An aluminum alloy film for the cathode 23 is formed from above, and the sealing member 4 is further joined to obtain the organic EL device shown in FIG. When a voltage is applied to the organic EL element, a portion of the light emitting active portion 221a sandwiched between the anode 21 and the cathode 23 emits light, and a display pattern 6 including an outer circle pattern 61 and an inner circle pattern 62 is displayed. You.

【0015】尚、本実施例では発光層の発光パターン以
外の部分であって陽極と陰極とに挟まれる部分(電圧が
印加される部分)にのみ電子線を照射して発光を失活さ
せたが、発光パターン以外の部分であって陽極と陰極と
に挟まれない部分の発光層にも電子線を照射してもよ
い。また、有機EL膜が発光層以外に電子注入層、電子
輸送層等を有する場合、発光層に電子線を照射する時期
は、発光層にこれらの層を積層する前であっても後であ
ってもよい。更に、上記実施例では陰極の成膜前に電子
線を照射したが、有機EL膜上に陰極を成膜した後に電
子線を照射してもよい。この場合にも、照射された部分
の発光層を失活させて表示パターンを形成することがで
きる。
In this embodiment, the electron beam is irradiated only on the portion other than the light emitting pattern of the light emitting layer and between the anode and the cathode (the portion to which a voltage is applied) to deactivate the light emission. However, the electron beam may also be applied to the light emitting layer in a portion other than the light emitting pattern and not between the anode and the cathode. In the case where the organic EL film has an electron injection layer, an electron transport layer, and the like in addition to the light emitting layer, the light emitting layer may be irradiated with an electron beam before or after laminating these layers on the light emitting layer. You may. Further, in the above embodiment, the electron beam is irradiated before forming the cathode, but the electron beam may be irradiated after forming the cathode on the organic EL film. Also in this case, the display pattern can be formed by deactivating the light emitting layer in the irradiated portion.

【0016】[0016]

【発明の効果】本発明の表示パターン形成方法は、表示
パターン形状の電極を形成する従来技術や、表示パター
ンの形状の貫通孔を有する絶縁層を形成する従来技術と
は異なり、ベタに形成された発光層の所定部分に電子線
等の高エネルギー線を照射して発光を失活させることに
より表示パターンを形成する。この方法によると、環状
のパターンの内側に独立して位置する別のパターンを有
するパターン(例えば二重丸形状のパターン)であって
も、レジストパターンを形成したり複数の蒸着マスク等
を使用したりすることなく作成することができる。従っ
て、製造工程が簡略化できるとともに、レジスト残渣が
発光に悪影響を及ぼすことがない。また、半導体分野に
おける電子線描画技術と同様に照射位置を正確にコント
ロールすることができるので、微細な表示パターンを高
精度に形成することができる。更に、発光層のうち表示
パターンを構成する部分と表示パターン以外の部分との
間に段差がないので、発光層上に陰極等を均一に形成す
ることが容易である。
The display pattern forming method of the present invention is different from the conventional technique of forming an electrode having a display pattern shape and the conventional technique of forming an insulating layer having a through hole having the shape of a display pattern. A display pattern is formed by irradiating a predetermined portion of the light emitting layer with a high energy beam such as an electron beam to inactivate light emission. According to this method, even if the pattern has another pattern independently positioned inside the annular pattern (for example, a double circular pattern), a resist pattern is formed or a plurality of evaporation masks are used. Can be created without having to do so. Therefore, the manufacturing process can be simplified, and the resist residue does not adversely affect light emission. Further, since the irradiation position can be accurately controlled as in the case of the electron beam lithography technology in the semiconductor field, a fine display pattern can be formed with high accuracy. Further, since there is no step between the portion forming the display pattern and the portion other than the display pattern in the light emitting layer, it is easy to uniformly form the cathode and the like on the light emitting layer.

【図面の簡単な説明】[Brief description of the drawings]

【図1】実施例において、発光層に電子線を照射して発
光失活部を形成する段階を示す縦断面図である。
FIG. 1 is a longitudinal sectional view showing a stage in which a light emitting layer is irradiated with an electron beam to form a light emitting deactivating portion in an example.

【図2】実施例において、ITO膜を成膜した段階を示
す平面図である。
FIG. 2 is a plan view showing a stage in which an ITO film is formed in an example.

【図3】実施例において、発光層を成膜した段階を示す
縦断面図である。
FIG. 3 is a longitudinal sectional view showing a stage in which a light emitting layer is formed in an example.

【図4】図1のX方向矢視図である。FIG. 4 is a view as seen in the direction of arrow X in FIG. 1;

【図5】実施例において、陰極を成膜した段階を示す平
面図である。
FIG. 5 is a plan view showing a stage in which a cathode is formed in an example.

【図6】実施例により製造された有機EL素子を示す縦
断面図である。
FIG. 6 is a longitudinal sectional view showing an organic EL device manufactured according to an example.

【図7】実施例により製造された有機EL素子を発光時
に透明基板側から見た平面図である。
FIG. 7 is a plan view of the organic EL device manufactured according to the example when viewed from the transparent substrate side during light emission.

【符号の説明】[Explanation of symbols]

1;透明基板、2;有機EL積層膜、21;陽極、2
2;有機EL膜、221;発光層、221a;発光活性
部、221b;発光失活部、23;陰極、4;封止部
材、6;表示パターン、61;外円パターン、62;内
円パターン
1; transparent substrate, 2; organic EL laminated film, 21; anode, 2
2, organic EL film, 221; light emitting layer, 221a; light emitting active portion, 221b; light emitting deactivating portion, 23; cathode, 4; sealing member, 6; display pattern, 61; outer circle pattern, 62;

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 発光層の所定部分に高エネルギー線を照
射して当該部分の発光を失活させることを特徴とする有
機EL素子の表示パターン形成方法。
1. A method for forming a display pattern of an organic EL device, comprising irradiating a predetermined portion of a light emitting layer with a high energy beam to deactivate light emission of the portion.
【請求項2】 前記高エネルギー線の照射は、透明基板
上に陽極及び前記発光層を順次積層した後、又は更に陰
極を積層した後に行われる請求項1記載の有機EL素子
の表示パターン形成方法。
2. The method for forming a display pattern of an organic EL device according to claim 1, wherein the irradiation with the high energy beam is performed after sequentially stacking an anode and the light emitting layer on a transparent substrate, or after further stacking a cathode. .
【請求項3】 前記高エネルギー線は1keV以上の電
子線である請求項1記載又は2記載の有機EL素子の表
示パターン形成方法。
3. The method according to claim 1, wherein the high energy beam is an electron beam of 1 keV or more.
JP25461099A 1999-09-08 1999-09-08 Method for forming display pattern of organic el element Pending JP2001076870A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
JP25461099A JP2001076870A (en) 1999-09-08 1999-09-08 Method for forming display pattern of organic el element

Publications (1)

Publication Number Publication Date
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Family

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Country Link
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