JP2000502238A - Method of manufacturing contacts suitable for flip chip assembly of electrical components - Google Patents
Method of manufacturing contacts suitable for flip chip assembly of electrical componentsInfo
- Publication number
- JP2000502238A JP2000502238A JP09523212A JP52321297A JP2000502238A JP 2000502238 A JP2000502238 A JP 2000502238A JP 09523212 A JP09523212 A JP 09523212A JP 52321297 A JP52321297 A JP 52321297A JP 2000502238 A JP2000502238 A JP 2000502238A
- Authority
- JP
- Japan
- Prior art keywords
- film
- cover
- conductive
- chip assembly
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 13
- 230000007613 environmental effect Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 description 9
- 238000010897 surface acoustic wave method Methods 0.000 description 5
- 238000005219 brazing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- ZTXONRUJVYXVTJ-UHFFFAOYSA-N chromium copper Chemical compound [Cr][Cu][Cr] ZTXONRUJVYXVTJ-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Wire Bonding (AREA)
Abstract
(57)【要約】 基板(1)上に設けられた導電構造(3)がカバー(2)により密封されているSAW素子のフリップチップアセンブリーに適した接触の製造方法において、カバー(2)が作られた後、導電構造(3)のパッドと接触するろう接可能な膜(4)が形成される。 (57) [Summary] In a method of manufacturing a contact suitable for a flip chip assembly of a SAW element, a conductive structure (3) provided on a substrate (1) is sealed by a cover (2). Is formed, a brazeable film (4) is formed which contacts the pads of the conductive structure (3).
Description
【発明の詳細な説明】 電気部品のフリップチップアセンブリーに適した接触の製造方法 この発明は、請求項1の上位概念による、電気部品のフリップチップアセンブ リーに適した接触の製造方法に関する。 先のドイツ特許出願P44415411.9には、基板上の部品構造を封止す るキャップを備えた電子部品のための密封構造が記載され、この密封構造におい てはキャップは基板上に設けられたカバーにより形成され、このカバーは部品構 造の範囲においてこれを収納する空所を持っている。このような密封構造は部品 構造を周囲の影響から保護し、その結果このように密封された電子部品は別の容 器を使用することなく直接さらに使用可能である。 小形化が益々進むに連れ、必要とする容器容積が最小でかつ構造高さも低い部 品が求められる。このような要求は、例えば、テレホンカードやクレジットカー ドのようなチップカードに電子部品を適用する際に課せられる。前記の先のドイ ツ特許出願による密封構造を備えた部品はこれらの要求を最適に満たす。特に、 部品がフリップチップアセンブリーに適した構成に実現されているときにそうで ある。 従来、フリップチップアセンブリーに適した部品は容器、特にセラミック容器 内にマウントされる。その場合、部品系の端子接続面(パッド)に、隆起部(バ ンプ)を備えた選択的にろう接可能な膜が設けられねばならず、このために一連 のプロセス工程が必要であり、この工程は特に表面波(SAW)素子に対しては 、重なり合う面状のフィンガー構造のために短絡の可能性が大きくなるので非常 に問題がある。 この発明の課題は、部品構造を損傷することなくフリップチップアセンブリー に適した接触のためのろう接可能な膜を作ることが可能な方法を提供することに ある。 この課題は冒頭に挙げた種類の方法において、この発明によれば請求項1の特 徴部の特徴事項により解決される。 この発明のさらなる構成は請求項2以下の対象である。 以下にこの発明を図面に示した実施例を参照して詳細に説明する。 図1はこの発明の方法により製造された表面波(SAW)部品の概略図を示し 、図2は図1の部品の部分概略平面図を示す。 図1において、SAW部品は一般に圧電基板1とその上に設けられた導電構造 3とからなり、これは例えばインタデジタル型変換器、共振器或いは反射器の接 触フィンガーを対象とすることができる。冒頭に挙げた先のドイツ特許出願に記 載されているように、導電構造3はキャップ2により覆われており、キャップ2 は構造を環境の影響から保護し、部品は容器としてのカバー2と基板1と共に直 接さらに使用可能である。 この発明によれば、導電構造3の電気的接触のためにフリップチップアセンブ リーに適した接触を作ることが行われる。図1から概略的に分かるように、カバ ー2には窓6が設けられ、この窓を通して導電構造3の(図示されてない)端子 接続面、いわゆるパッドと接触するろう接可能な膜4が設けられる。ろう接可能 な膜4は、その場合、図2から明らかなように、カバー2の部分上にも載ってい る。このろう接可能な膜4としては例えばクロム/クロム銅/銅/金の膜を対象 とすることができる。 ろう接可能な膜を作るために、この発明の1実施例によれば、先ずろう接可能 な物質からなる膜が全面に、即ち全カバー2上にも蒸着され、この膜はそれから 構造化され、それぞれ導電構造3のパッドと接触する個々のろう接可能な膜4が 生じる。 他の実施例によれば、電気的にろう接可能な膜4はまたその膜寸法を決めるマ スクを通して蒸着することもできる。 ろう接可能な膜4を作った後、窓6にはろう接可能な膜4と接触することにな るバンプ7が挿入され、膜4とろう接される。このバンプ7を介して部品は電気 回路に取付けることができる。 この発明による方法は、ろう接可能な膜4とバンプ7とが、部品構造を環境の 影響から保護するカバー2を取りつけた後に初めて作られるという利点を持って いる。従って、部品構造はろう接可能な膜やバンプを作る際の工程から生ずる影 響によってもはや損傷を受けることがない。さらに別の利点は、ろう接可能な膜 が大面積に作られ、その寸法は従って(図示されてない)パッドのそれに対して 大きくすることができるという点にある。 全面にわたって蒸着された膜4の構造化を回避するために、カバー2の窓6は 、それが導電性の膜4のためのマスクとして機能し、同時にその縁部には蒸着さ れないように形成することができる。DETAILED DESCRIPTION OF THE INVENTION Method of manufacturing contacts suitable for flip chip assembly of electrical components The invention provides a flip-chip assembly of an electrical component according to the preamble of claim 1. The present invention relates to a method for producing a contact suitable for a lead. In the earlier German patent application P4445411.9, the component structure on the substrate is encapsulated. A sealing structure for an electronic component with a cap is described. The cap is formed by a cover provided on the substrate, and this cover It has a space to store it in the construction area. Such a sealed structure is a part Protects the structure from surrounding influences, so that the electronic components thus sealed have different It can be further used directly without using a vessel. As the miniaturization progresses, the required container volume is minimum and the structural height is low. Goods are required. Such requests can be made, for example, by telephone cards or credit cards. Imposed when electronic components are applied to chip cards such as cards. Doi ahead A component with a sealing structure according to the patent application meets these requirements optimally. In particular, This is the case when the components are implemented in a configuration suitable for flip chip assembly. is there. Conventionally, components suitable for flip chip assembly are containers, especially ceramic containers Mounted inside. In this case, the bumps (bars) should be Must be provided with a selectively brazeable membrane with Is necessary, and this step is particularly necessary for a surface acoustic wave (SAW) element. Very high potential for short circuit due to overlapping planar finger structures There is a problem. An object of the present invention is to provide a flip chip assembly without damaging the component structure. To provide a method capable of producing a brazeable membrane for suitable contact is there. This object is achieved in a method of the type mentioned at the beginning according to the invention by the features of claim 1. It is solved by the characteristics of the sign. A further configuration of the present invention is the subject matter of claim 2. Hereinafter, the present invention will be described in detail with reference to embodiments shown in the drawings. FIG. 1 shows a schematic diagram of a surface acoustic wave (SAW) component manufactured by the method of the present invention. FIG. 2 shows a partial schematic plan view of the component of FIG. In FIG. 1, a SAW component generally includes a piezoelectric substrate 1 and a conductive structure provided thereon. 3 which is, for example, the connection of an interdigital converter, a resonator or a reflector. Tactile fingers can be targeted. As noted in the earlier German patent application As shown, the conductive structure 3 is covered by the cap 2 Protects the structure from environmental influences and the parts are directly It can be used further. According to the invention, the flip-chip assembly for the electrical contact of the conductive structure 3 is provided. Making contact suitable for Lee is performed. As can be seen schematically from FIG. 2 is provided with a window 6 through which terminals (not shown) of the conductive structure 3 are provided. A brazingable film 4 is provided which is in contact with a connection surface, a so-called pad. Brazing possible In this case, the transparent film 4 also rests on the part of the cover 2 as is evident from FIG. You. The film 4 capable of being soldered is, for example, a chromium / chromium copper / copper / gold film. It can be. According to one embodiment of the present invention, to form a brazeable membrane, first a brazeable A film made of a substance is deposited on the entire surface, that is, on the entire cover 2, and this film is then Structured individual brazeable membranes 4, each in contact with a pad of conductive structure 3, Occurs. According to another embodiment, the electrically solderable membrane 4 also has a dimensioning mechanism. It can also be deposited through a mask. After making the brazeable membrane 4, the window 6 will come into contact with the brazeable membrane 4. Bump 7 is inserted and brazed to the membrane 4. Parts are electrically connected via the bumps 7 Can be mounted on circuits. In the method according to the invention, the solderable film 4 and the bumps 7 make the component structure environmentally friendly. With the advantage that it is made only after attaching the cover 2 that protects from the effects I have. Therefore, the component structure is affected by the process of making brazing films and bumps. No longer damaged by sound. Yet another advantage is the brazeable membrane Is made in a large area, and its dimensions are therefore relative to that of the pad (not shown). The point is that it can be enlarged. In order to avoid structuring of the film 4 deposited over the entire surface, the window 6 of the cover 2 , It functions as a mask for the conductive film 4 and at the same time is deposited on its edges It can be formed not to be.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 シュテルツル、アロイス ドイツ連邦共和国 デー―81549 ミュン ヘン トラウンシュタインシュトラーセ 33 (72)発明者 クリューガー、ハンス ドイツ連邦共和国 デー―81737 ミュン ヘン ペラローシュトラーセ 13────────────────────────────────────────────────── ─── Continuation of front page (72) Inventors Steltzl, Alois Germany Day-81549 Mün Hen Traunsteinstrasse 33 (72) Kruger, Hans, inventor Germany Day-81737 Mün Hen Pera Strasse 13
Claims (1)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19548046A DE19548046C2 (en) | 1995-12-21 | 1995-12-21 | Method for producing contacts of electrical components suitable for flip-chip assembly |
DE19548046.5 | 1995-12-21 | ||
PCT/DE1996/002412 WO1997023904A1 (en) | 1995-12-21 | 1996-12-16 | Process for producing contacts on electrical components suitable for a flip-chip assembly |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2000502238A true JP2000502238A (en) | 2000-02-22 |
JP4413278B2 JP4413278B2 (en) | 2010-02-10 |
Family
ID=7780957
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52321297A Expired - Lifetime JP4413278B2 (en) | 1995-12-21 | 1996-12-16 | Method of making a brazeable film for contact suitable for flip chip assembly of electronic components |
Country Status (8)
Country | Link |
---|---|
US (1) | US6057222A (en) |
EP (1) | EP0868744A1 (en) |
JP (1) | JP4413278B2 (en) |
KR (1) | KR100445569B1 (en) |
CN (1) | CN1105397C (en) |
CA (1) | CA2241037A1 (en) |
DE (1) | DE19548046C2 (en) |
WO (1) | WO1997023904A1 (en) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19806550B4 (en) * | 1998-02-17 | 2004-07-22 | Epcos Ag | Electronic component, in particular component working with surface acoustic waves - SAW component |
DE19806818C1 (en) * | 1998-02-18 | 1999-11-04 | Siemens Matsushita Components | Method for producing an electronic component, in particular an SAW component working with acoustic surface waves |
DE19822794C1 (en) | 1998-05-20 | 2000-03-09 | Siemens Matsushita Components | Multiple uses for electronic components, in particular surface acoustic wave components |
TW444288B (en) * | 1999-01-27 | 2001-07-01 | Shinko Electric Ind Co | Semiconductor wafer and semiconductor device provided with columnar electrodes and methods of producing the wafer and device |
US6888167B2 (en) * | 2001-07-23 | 2005-05-03 | Cree, Inc. | Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding |
US6747298B2 (en) * | 2001-07-23 | 2004-06-08 | Cree, Inc. | Collets for bonding of light emitting diodes having shaped substrates |
DE10142542A1 (en) * | 2001-08-30 | 2003-03-27 | Infineon Technologies Ag | Arrangement of semiconductor chip in chip carrier housing has conductive coating applied to semiconductor chip on opposite side to chip carrier |
DE10302298A1 (en) | 2003-01-22 | 2004-08-05 | Henkel Kgaa | Heat-curable, thermally expandable composition with a high degree of expansion |
US6992400B2 (en) * | 2004-01-30 | 2006-01-31 | Nokia Corporation | Encapsulated electronics device with improved heat dissipation |
US7608789B2 (en) * | 2004-08-12 | 2009-10-27 | Epcos Ag | Component arrangement provided with a carrier substrate |
DE102005008511B4 (en) * | 2005-02-24 | 2019-09-12 | Tdk Corporation | MEMS microphone |
DE102005008514B4 (en) * | 2005-02-24 | 2019-05-16 | Tdk Corporation | Microphone membrane and microphone with the microphone membrane |
DE102005008512B4 (en) | 2005-02-24 | 2016-06-23 | Epcos Ag | Electrical module with a MEMS microphone |
JP4585419B2 (en) * | 2005-10-04 | 2010-11-24 | 富士通メディアデバイス株式会社 | Surface acoustic wave device and manufacturing method thereof |
DE102005053765B4 (en) * | 2005-11-10 | 2016-04-14 | Epcos Ag | MEMS package and method of manufacture |
DE102005053767B4 (en) * | 2005-11-10 | 2014-10-30 | Epcos Ag | MEMS microphone, method of manufacture and method of installation |
JP4881211B2 (en) * | 2007-04-13 | 2012-02-22 | 新光電気工業株式会社 | Wiring substrate manufacturing method, semiconductor device manufacturing method, and wiring substrate |
DE102013106353B4 (en) * | 2013-06-18 | 2018-06-28 | Tdk Corporation | Method for applying a structured coating to a component |
US10431533B2 (en) * | 2014-10-31 | 2019-10-01 | Ati Technologies Ulc | Circuit board with constrained solder interconnect pads |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59172756A (en) * | 1983-03-22 | 1984-09-29 | Nec Corp | Semiconductor device |
GB2171850B (en) * | 1985-02-22 | 1988-05-18 | Racal Mesl Ltd | Mounting surface acoustic wave components |
JPS62173814A (en) * | 1986-01-28 | 1987-07-30 | Alps Electric Co Ltd | Mounting unit for surface acoustic wave element |
JP2563652B2 (en) * | 1990-07-17 | 1996-12-11 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
EP0475139A3 (en) * | 1990-09-04 | 1992-03-25 | Motorola, Inc. | Method and apparatus for saw device passivation |
JPH0590872A (en) * | 1991-09-27 | 1993-04-09 | Sumitomo Electric Ind Ltd | Surface acoustic wave element |
JP2718854B2 (en) * | 1992-06-10 | 1998-02-25 | 株式会社東芝 | Semiconductor device |
EP0590780B1 (en) * | 1992-08-28 | 1997-06-25 | Dow Corning Corporation | Method for producing an integrated circuit with hermetic protection based on a ceramic layer |
DE4302171A1 (en) * | 1993-01-22 | 1994-07-28 | Be & We Beschaeftigungs Und We | Surface acoustic wave component mfr. with chip and support |
WO1994024699A1 (en) * | 1993-04-08 | 1994-10-27 | Citizen Watch Co., Ltd. | Semiconductor device |
DE59504639D1 (en) * | 1994-05-02 | 1999-02-04 | Siemens Matsushita Components | ENCLOSURE FOR ELECTRONIC COMPONENTS |
-
1995
- 1995-12-21 DE DE19548046A patent/DE19548046C2/en not_active Expired - Lifetime
-
1996
- 1996-12-16 WO PCT/DE1996/002412 patent/WO1997023904A1/en not_active Application Discontinuation
- 1996-12-16 KR KR10-1998-0704406A patent/KR100445569B1/en not_active IP Right Cessation
- 1996-12-16 EP EP96946147A patent/EP0868744A1/en not_active Ceased
- 1996-12-16 JP JP52321297A patent/JP4413278B2/en not_active Expired - Lifetime
- 1996-12-16 CN CN96199161A patent/CN1105397C/en not_active Expired - Lifetime
- 1996-12-16 CA CA002241037A patent/CA2241037A1/en not_active Abandoned
-
1998
- 1998-06-22 US US09/103,163 patent/US6057222A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1205800A (en) | 1999-01-20 |
DE19548046C2 (en) | 1998-01-15 |
CN1105397C (en) | 2003-04-09 |
KR100445569B1 (en) | 2004-10-15 |
US6057222A (en) | 2000-05-02 |
EP0868744A1 (en) | 1998-10-07 |
CA2241037A1 (en) | 1997-07-03 |
DE19548046A1 (en) | 1997-06-26 |
WO1997023904A1 (en) | 1997-07-03 |
JP4413278B2 (en) | 2010-02-10 |
KR19990072096A (en) | 1999-09-27 |
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