JP2000328229A - Vacuum deposition device - Google Patents
Vacuum deposition deviceInfo
- Publication number
- JP2000328229A JP2000328229A JP11139110A JP13911099A JP2000328229A JP 2000328229 A JP2000328229 A JP 2000328229A JP 11139110 A JP11139110 A JP 11139110A JP 13911099 A JP13911099 A JP 13911099A JP 2000328229 A JP2000328229 A JP 2000328229A
- Authority
- JP
- Japan
- Prior art keywords
- organic
- masking plate
- film
- plasma
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001771 vacuum deposition Methods 0.000 title claims abstract description 13
- 230000000873 masking effect Effects 0.000 claims abstract description 90
- 238000001704 evaporation Methods 0.000 claims abstract description 26
- 230000008020 evaporation Effects 0.000 claims abstract description 24
- 239000011368 organic material Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 10
- 230000008016 vaporization Effects 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 13
- 238000007738 vacuum evaporation Methods 0.000 claims description 12
- 239000007769 metal material Substances 0.000 claims description 9
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 238000005401 electroluminescence Methods 0.000 claims 1
- 238000009834 vaporization Methods 0.000 claims 1
- 125000002524 organometallic group Chemical group 0.000 abstract description 10
- 230000015572 biosynthetic process Effects 0.000 description 13
- 238000012545 processing Methods 0.000 description 12
- 238000005530 etching Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- -1 oxygen ions Chemical class 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000005513 bias potential Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 230000007723 transport mechanism Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 230000008929 regeneration Effects 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 125000005461 organic phosphorous group Chemical group 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N phosphoric acid Substances OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は真空蒸着装置に関
し、特にマスキング成膜を必要とする有機エレクトロル
ミネッセンスディスプレイなどのマスキング板を使用し
た成膜装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum evaporation apparatus, and more particularly to a film formation apparatus using a masking plate such as an organic electroluminescent display which requires a masking film formation.
【０００２】[0002]
【従来の技術】近年、自発光デバイスである有機エレク
トロルミネッセンス素子（以下、有機ＥＬ素子と記す）
は、小型ディスプレイ等への利用に向けて研究開発が進
められてきた。しかし、その市場の開拓には液晶パネル
の壁を打ち破らなければならなく、特に消費電力低減の
優位性を確保しなければ、その市場を開拓することは難
しい。そこで注目を集めているのが、自動車搭載用のパ
ネルである。有機ＥＬは自発光で、明るいところでも暗
いところでも視認性は高く、また自動車搭載用なので消
費電力の問題も解決する。2. Description of the Related Art In recent years, organic electroluminescent elements (hereinafter referred to as organic EL elements) which are self-luminous devices.
Has been researched and developed for use in small displays and the like. However, in order to open that market, it is necessary to break through the walls of liquid crystal panels, and it is difficult to open that market unless the advantage of reducing power consumption is secured. Attention has been focused on panels for automobiles. Organic EL is self-luminous, has high visibility in bright and dark places, and solves the problem of power consumption because it is mounted on a car.
【０００３】一般的に有機ＥＬ素子の堆積膜は、真空蒸
着法やスパッタ法で基板上に各々成膜されるが、中でも
ディスプレイの製作には開口を有するマスキング板を利
用した成膜技術によるパターニングが必須である。[0003] Generally, a deposited film of an organic EL element is formed on a substrate by a vacuum evaporation method or a sputtering method. In particular, in the manufacture of a display, patterning is performed by a film forming technique using a masking plate having an opening. Is required.
【０００４】しかしながら、成膜を繰り返しているうち
にマスキング板に有機膜が堆積してくると前記マスキン
グの開口が目詰まりをおこしたり、堆積膜の影響でパタ
ーンずれが発生し素子の不良の原因となる。これを、防
止するために一般的には、真空槽を大気に開放し、前記
マスキング板を取り出し有機膜の除去を行うか、新しい
マスキング板に交換することが行われている。有機膜の
除去を行う方法は、大気に取り出し、有機溶剤で有機膜
を溶かす方法や、ブラスト処理のような方法により有機
膜を削り取るのが一般的なマスキング板の再生方法であ
る。However, if an organic film accumulates on the masking plate during repeated film formation, the masking opening may be clogged, or a pattern shift may occur due to the effect of the deposited film, resulting in a defective element. Becomes In order to prevent this, generally, the vacuum chamber is opened to the atmosphere, the masking plate is taken out, and the organic film is removed or replaced with a new masking plate. As a method of removing the organic film, a general method of regenerating a masking plate is to take out the film into the atmosphere and dissolve the organic film with an organic solvent, or to scrape the organic film by a method such as blasting.
【０００５】また、従来の真空処理装置における真空中
での堆積膜の除去方法は、例えば特開平８−３１９５８
６号公報に開示されているように、エッチングガスを流
しプラズマを発生させ、膜（残留生成物）をエッチング
する方法が行われている。この方法は、一般的には、真
空槽内にプラズマ発生用の電極を持った、プラズマＣＶ
Ｄ装置、エッチング装置の膜除去、及び副成生物の除去
に用いられている。しかし、成膜材料を真空槽内に持
つ、スパッタリング装置や蒸発源ルツボを使用した蒸着
装置には用いられていない。これは、カソードにボンデ
ィングされたターゲット材料やルツボ内にある材料が反
応ガスのラジカルでエッチングされてしまうからであ
る。A method of removing a deposited film in a vacuum in a conventional vacuum processing apparatus is disclosed in, for example, Japanese Patent Application Laid-Open No. Hei 8-31958.
As disclosed in Japanese Unexamined Patent Publication No. 6-106, a method of etching a film (residual product) by flowing an etching gas to generate plasma. This method generally uses a plasma CV having an electrode for plasma generation in a vacuum chamber.
It is used for film removal of D equipment and etching equipment, and removal of by-products. However, it is not used in a sputtering apparatus or a vapor deposition apparatus using an evaporation source crucible having a film forming material in a vacuum chamber. This is because the target material bonded to the cathode and the material in the crucible are etched by the radical of the reaction gas.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、従来の
真空槽を一旦大気に開放してマスキング板の有機膜除去
を行うことや、真空中で反応ガスを流しプラズマを発生
させ膜除去を行う装置には、次のような問題点があっ
た。However, a conventional apparatus for removing an organic film on a masking plate by once opening a vacuum chamber to the atmosphere or an apparatus for removing a film by flowing a reaction gas in a vacuum to generate plasma. Had the following problems.
【０００７】１．一般的に、有機材料は、吸湿性があ
り、材料の脱ガスや脱水を充分に行わないと有機ＥＬ素
子などは、寿命が著しく低下することが知られている。
真空槽を一旦大気に開放すると、再び成膜状態（真空槽
や有機材料の水分を除去した状態）に戻すための時間が
必要とし生産効率が低下する。 ２．マスキング板を交換した場合、マスキング板の位置
合わせをその都度行う必要がある。この作業は、数十ミ
クロンから数ミクロンの精度で位置合わせする必要があ
り、位置調整機構を取り付けておく必要がある。 ３．酸素等を含むガスを処理室に導入して、その処理室
内にプラズマを発生させるための平行平板電極でプラズ
マを発生させて有機膜の除去を行うと、その処理室内の
内蔵物、例えば処理室の内壁のプラズマにさらされる表
面は洗浄されるが、マスキング板の厚さ２ｍｍ、溝幅１
／１０ｍｍ単位の溝の側壁、あるいは基板と接触する側
のマスキング板溝エッジ部の堆積した有機膜を除去する
ことは困難であった。結局、マスキング板以外の内蔵物
はプラズマによって洗浄されたとしても、最も洗浄した
いマスキング板の溝側壁部の洗浄が不完全なため、有機
ＥＬ素子の不良率が減少しない。 ４．プラズマにより有機膜を除去しようとすると、ルツ
ボ内にある有機材料まで、反応ガスのラジカルでエッチ
ングされてしまう。[0007] 1. Generally, it is known that an organic material has a hygroscopic property, and the life of an organic EL element or the like is significantly reduced unless degassing or dehydration of the material is sufficiently performed.
Once the vacuum chamber is opened to the atmosphere, it takes time to return to a film-forming state (a state in which the water in the vacuum chamber and the organic material has been removed), and the production efficiency decreases. 2. When the masking plate is replaced, it is necessary to perform the positioning of the masking plate each time. In this operation, it is necessary to perform positioning with an accuracy of several tens of microns to several microns, and it is necessary to attach a position adjusting mechanism. 3. When a gas containing oxygen or the like is introduced into the processing chamber, plasma is generated by a parallel plate electrode for generating plasma in the processing chamber, and the organic film is removed. The surface of the inner wall exposed to the plasma is cleaned, but the masking plate is 2 mm thick and the groove width is 1 mm.
It was difficult to remove the organic film deposited on the side wall of the groove in units of / 10 mm or on the edge of the groove of the masking plate on the side in contact with the substrate. As a result, even if the built-in components other than the masking plate are cleaned by the plasma, the defective portion of the organic EL element does not decrease because the cleaning of the groove side wall portion of the masking plate that is most desired to be cleaned is incomplete. 4. If an attempt is made to remove the organic film by plasma, even the organic material in the crucible is etched by radicals of the reaction gas.
【０００８】本発明は、この様な従来技術の欠点を改善
するためになされたものであり、蒸発源より有機材料又
は有機金属材料を蒸発させ基板上の特定部のみに有機膜
又は有機金属膜を堆積させるマスキング板を用いた真空
蒸着装置において、前記マスキング板に堆積した有機膜
又は有機金属膜を容易に、しかも真空を破ることなく除
去することができる真空蒸着装置を提供することを目的
とするものである。SUMMARY OF THE INVENTION The present invention has been made to solve such disadvantages of the prior art. An organic material or an organic metal material is evaporated only from a specific portion on a substrate by evaporating an organic material or an organic metal material from an evaporation source. An object of the present invention is to provide a vacuum evaporation apparatus using a masking plate for depositing an organic film or an organic metal film deposited on the masking plate, which can be easily removed without breaking vacuum. Is what you do.
【０００９】[0009]
【課題を解決するための手段】即ち、本発明は、蒸発源
を備え、該蒸発源より有機材料又は有機金属材料を蒸発
させ、基板上の特定部のみに有機膜又は有機金属膜を堆
積させるマスキング板を使用する真空蒸着装置におい
て、真空蒸着によりマスキング板に堆積した有機膜又は
有機金属膜をプラズマの存在下で除去する手段を具備し
たことを特徴とする真空蒸着装置である。That is, the present invention comprises an evaporation source, an organic material or an organic metal material is evaporated from the evaporation source, and an organic film or an organic metal film is deposited only on a specific portion on the substrate. A vacuum evaporation apparatus using a masking plate, comprising: means for removing an organic film or an organic metal film deposited on the masking plate by vacuum evaporation in the presence of plasma.
【００１０】前記手段（マスキング板の再生手段又はク
リーニング手段）が、酸素を含むガスを導入し、マスキ
ング板にプラズマを発生させる電力を給電して前記マス
キング板の周辺のみにプラズマを発生させマスキング板
に堆積した有機膜又は有機金属膜を除去する手段からな
るのが好ましい。The means (reproducing means or cleaning means for the masking plate) introduces a gas containing oxygen, supplies power for generating plasma to the masking plate, and generates plasma only in the vicinity of the masking plate to generate plasma. It is preferable to include means for removing the organic film or the organic metal film deposited on the substrate.
【００１１】前記再生手段又はクリーニング手段が、酸
素を含むガスを導入し、マスキング板以外にプラズマを
発生させるための電極を設け、マスキング板にバイアス
を印加して前記マスキング板の周辺のみにプラズマを発
生させてマスキング板に堆積した有機膜又は有機金属膜
を除去する手段からなるのが好ましい。The regenerating means or the cleaning means introduces an oxygen-containing gas, provides an electrode for generating plasma in addition to the masking plate, applies a bias to the masking plate, and applies plasma only to the periphery of the masking plate. It is preferable to include a means for removing the organic film or the organic metal film generated and deposited on the masking plate.
【００１２】前記蒸発源が、マスキング板に堆積した有
機膜又は有機金属膜を除去するためのプラズマによって
発生した酸素ラジカルの進入を防止するシャッターを有
するのが好ましい。前記有機材料又は有機金属材料が有
機エレクトロルミネッセンスディスプレイ用材料である
のが好ましい。It is preferable that the evaporation source has a shutter for preventing entry of oxygen radicals generated by plasma for removing the organic film or the organic metal film deposited on the masking plate. It is preferable that the organic material or the organic metal material is a material for an organic electroluminescent display.
【００１３】[0013]
【発明の実施の形態】本発明のマスキング板再生又はク
リーニング機構を備えた真空蒸着装置は、蒸発源を備
え、該蒸発源より有機材料又は有機金属材料を蒸発させ
基板上の特定部のみに有機膜又は有機金属膜を堆積させ
るマスキング板を使用する真空蒸着装置において、真空
蒸着によりマスキング板に堆積した有機膜又は有機金属
膜を前記マスキング板の面内周辺領域のみにプラズマを
発生させ真空中で除去する再生（又はクリーニング）手
段を具備することを特徴とする。BEST MODE FOR CARRYING OUT THE INVENTION A vacuum deposition apparatus provided with a masking plate regeneration or cleaning mechanism according to the present invention includes an evaporation source, and evaporates an organic material or an organic metal material from the evaporation source to form an organic material only on a specific portion on a substrate. In a vacuum deposition apparatus using a masking plate for depositing a film or an organometallic film, the organic film or the organometallic film deposited on the masking plate by vacuum deposition generates plasma only in the in-plane peripheral region of the masking plate and generates a vacuum. It is characterized by comprising a regeneration (or cleaning) means for removing.
【００１４】具体的には、本発明の真空蒸着装置は、例
えば有機ＥＬ素子の堆積有機膜又は有機金属膜の除去手
段を備え、前記の問題点を解決すべく以下ようなの手段
を講じたことに特徴がある。Specifically, the vacuum deposition apparatus of the present invention is provided with, for example, means for removing an organic film or an organic metal film deposited on an organic EL element, and has taken the following means to solve the above problems. There is a feature.
【００１５】１．蒸発源ルツボを備えた、基板上の特定
部のみに有機膜を堆積させるマスキング板を使用する真
空蒸着装置において、前記マスキング板の周辺のみにプ
ラズマを発生させ、前記マスキング板に堆積した有機膜
又は有機金属膜だけを真空中で除去した。具体的には、
前記マスキング板の周辺にプラズマを封じ込めるシール
ド板及びシャッターを配置し、プラズマを封じ込め、マ
スキング板にプラズマを発生させる電力を供給した。マ
スキング板にマイナス電位がかかるように接続した。マ
スキング板にマイナス電位がかかっているために、酸素
イオンが、マスキング板の溝内まで回り込み、マスキン
グ板の溝エッジ部まで堆積した有機膜又は有機金属膜を
除去することができる。1. In a vacuum evaporation apparatus using a masking plate for depositing an organic film only on a specific portion on a substrate, provided with an evaporation source crucible, a plasma is generated only around the masking plate, and the organic film deposited on the masking plate or Only the organometallic film was removed in vacuum. In particular,
A shield plate and a shutter for sealing the plasma were arranged around the masking plate, and the plasma was sealed, and power for generating the plasma was supplied to the masking plate. The masking plate was connected so that a negative potential was applied. Since a negative potential is applied to the masking plate, the oxygen ions sneak into the groove of the masking plate, and the organic film or the organic metal film deposited up to the groove edge of the masking plate can be removed.
【００１６】２．蒸発源ルツボを備えた、基板上の特定
部のみに有機膜又は有機金属膜を堆積させるマスキング
板を使用する真空蒸着装置において、前記マスキング板
の周辺のみにプラズマを発生させ、前記マスキング板に
堆積した有機膜又は有機金属膜だけを真空中で除去し
た。具体的には、前記マスキング板の周辺にプラズマを
封じ込めるシールド板及びシャッターを配置し、プラズ
マを封じ込め、さらに防着板にプラズマを発生させる電
力を供給した。かつ、マスキング板にマイナスのバイア
ス電位を供給した。マスキング板にマイナス電位がかか
っているために、酸素イオンがマスキング板の溝内まで
回り込み、マスキング板の溝エッジ部まで堆積した有機
膜又は有機金属膜を除去することができた。2. In a vacuum evaporation apparatus using a masking plate provided with an evaporation source crucible and depositing an organic film or an organometallic film only on a specific portion of a substrate, plasma is generated only around the masking plate and deposited on the masking plate. Only the organic film or the organic metal film thus removed was removed in vacuum. Specifically, a shield plate and a shutter for sealing the plasma were arranged around the masking plate, and the plasma was sealed, and power for generating the plasma was supplied to the deposition-preventing plate. Further, a negative bias potential was supplied to the masking plate. Since a negative potential was applied to the masking plate, oxygen ions spilled into the groove of the masking plate, and the organic film or the organic metal film deposited up to the groove edge of the masking plate could be removed.
【００１７】３．上記１及び２の有機膜又は有機金属膜
除去手段に付加して、蒸発源ルツボの上部にルツボ内に
酸素イオンの進入を防止する構造を備えたシャッターを
取り付けた。このシャッターによりルツボ内の有機材料
又は有機金属材料のエッチングが無くなった。3. In addition to the organic film or organic metal film removing means of the above 1 and 2, a shutter having a structure for preventing oxygen ions from entering the crucible was attached above the evaporation source crucible. This shutter eliminated the etching of the organic material or the organic metal material in the crucible.
【００１８】本発明において用いられる有機膜又は有機
金属膜としては、例えば有機リン酸化合物、有機亜リン
酸化合物や次亜リン酸化合物の他、特開平１１−８０６
５号公報や特開平１１−１６６７７号公報などに開示さ
れた金属オキシノイド化合物やテトラアリルジアミンな
どの有機ＥＬ用のホール移動層形成化合物または金属フ
タロシニアニン化合物などのホール注入層形成化合物等
が挙げられる。The organic film or the organic metal film used in the present invention is, for example, an organic phosphoric acid compound, an organic phosphorous acid compound or a hypophosphorous acid compound.
No. 5, JP-A-11-16677 and the like, and examples thereof include compounds for forming a hole transfer layer for organic EL such as metal oxinoid compounds and tetraallyl diamine, and compounds for forming a hole injection layer such as metal phthalocyaninine compounds. Can be
【００１９】又、本発明で用いるマスキング板として
は、ステンレス板、銅板、アルミ板、銀板などが挙げら
れ、厚みとしては、０．０１ｍｍ〜１０ｍｍ、好ましく
は０．１ｍｍ〜１ｍｍである。The masking plate used in the present invention includes a stainless plate, a copper plate, an aluminum plate, a silver plate and the like, and has a thickness of 0.01 mm to 10 mm, preferably 0.1 mm to 1 mm.
【００２０】[0020]
【実施例】以下に実施例を挙げて本発明を具体的に説明
する。EXAMPLES The present invention will be specifically described below with reference to examples.
【００２１】実施例１ 図１は本発明の真空蒸着装置の一実施態様を示す概略図
である。同図１において、マスキング板１０１は絶縁材
料である支持部材１０６で固定されている。真空蒸着処
理された基板１０２は搬送機構１１２によって、基板搬
出入口１１４より搬送され、アース電極１０４でありか
つ防着板も兼ねる処理箱から取り除かれる。Embodiment 1 FIG. 1 is a schematic view showing an embodiment of the vacuum evaporation apparatus of the present invention. In FIG. 1, the masking plate 101 is fixed by a support member 106 which is an insulating material. The substrate 102 that has been subjected to the vacuum deposition processing is transported by the transport mechanism 112 through the substrate transport port 114, and is removed from the processing box that is the ground electrode 104 and also serves as a deposition prevention plate.
【００２２】有機蒸着源１０５で処理を施された基板１
０２が取り除かれた後、電源１０７に接続されているマ
スキング板１０１をカソード電極とし、防着板をも兼ね
るアース電極１０４とで、ガス導入口１１１より酸素を
供給してプラズマを発生させる。その時、蒸着源１０５
にもプラズマが及んでしまうのでシャッター１１３で開
口を塞ぐ。プラズマは、基板１０２が存在していた放電
空間１０８だけに発生することを確認した。Substrate 1 treated by organic deposition source 105
After the removal of 02, the masking plate 101 connected to the power supply 107 is used as a cathode electrode, and the ground electrode 104, which also serves as a deposition-preventing plate, supplies oxygen from the gas inlet 111 to generate plasma. At that time, the deposition source 105
Therefore, the opening is closed by the shutter 113 because the plasma reaches the opening. It was confirmed that plasma was generated only in the discharge space 108 where the substrate 102 was present.
【００２３】図２に、実施例１に用いたマスキング板を
示す。マスキング板に付着した有機膜を除去した放電条
件は、以下の通りである。FIG. 2 shows a masking plate used in the first embodiment. The discharge conditions under which the organic film attached to the masking plate was removed are as follows.
【００２４】 処理圧力 １３３Ｐａ 放電電力 １３．５６ＭＨｚ、１００Ｗ 酸素流量 ５０ｓｃｃｍ 処理時間 １０ｍｉｎ マスキング板に付着した有機膜の除去及び評価をするテ
ストを次のように実施した。Processing pressure 133 Pa Discharge power 13.56 MHz, 100 W Oxygen flow rate 50 sccm Processing time 10 min A test for removing and evaluating the organic film adhered to the masking plate was performed as follows.
【００２５】真空槽内圧力をｌ×１０-4Ｐａ以下に排気
した後、有機材料蒸発源を充填したルツボを約２５０℃
にコントロールする。水晶式膜厚モニターにより蒸着速
度が安定すること（約０．２ｎｍ／ｓ）を確認し、シャ
ッターを開き成膜を開始する。水晶式膜厚モニターで
０．３μｍの膜厚が着膜したことを確認しシャッターを
閉める。この膜厚の成膜を１０回行い、成膜されたパタ
ーンの測定を行った。After the pressure in the vacuum chamber is evacuated to 1 × 10 −4 Pa or less, the crucible filled with the organic material evaporation source is heated to about 250 ° C.
To control. The deposition rate is confirmed to be stable (about 0.2 nm / s) by a quartz crystal film thickness monitor, and the shutter is opened to start film formation. After confirming that a film thickness of 0.3 μm has been formed on the quartz crystal film thickness monitor, close the shutter. Film formation with this film thickness was performed 10 times, and the formed pattern was measured.
【００２６】マスキング板に、堆積した総膜厚は約３μ
ｍである。テスト用マスキング板パターンを図２に示
す。穴は５０μｍ角、穴間隔は３０μｍのパターニング
がなされている。The total film thickness deposited on the masking plate is about 3 μm.
m. FIG. 2 shows the masking plate pattern for the test. The holes are patterned so as to have a size of 50 μm square and the space between the holes is 30 μm.
【００２７】１回目の成膜ではマスキング板の５０μｍ
角の穴に対応して、４９μｍ角〜５０μｍ角の誤差範囲
で有機材料の堆積層が成膜できたのに対し、１０回成膜
後は４６μｍ角〜４９μｍ角の誤差になった。ここで、
上記放電条件により有機膜の除去を行った後、再度成膜
を行った。パターンを測定した結果、堆積層の面積は、
４９μｍ角〜５０μｍ角の誤差範囲に収まった。In the first film formation, a masking plate of 50 μm
An organic material deposited layer could be formed within an error range of 49 μm square to 50 μm square corresponding to the square hole, but an error of 46 μm square to 49 μm square after 10 times of film formation. here,
After removing the organic film under the above discharge conditions, film formation was performed again. As a result of measuring the pattern, the area of the deposited layer is
It was within the error range of 49 μm square to 50 μm square.
【００２８】この結果より、マスキング板に付着した有
機膜は、酸素プラズマにより除去されたと判断できる。
また、マスキング板に直接プラズマ電力を印加している
ため、プラズマの回り込みが良好で、マスキング板溝エ
ッジ部の膜除去が充分に行われたことを確認した。From this result, it can be determined that the organic film attached to the masking plate has been removed by oxygen plasma.
In addition, since plasma power was directly applied to the masking plate, it was confirmed that plasma wraparound was good and that film removal at the edge of the groove of the masking plate was sufficiently performed.
【００２９】実施例２ 図３は本発明の真空蒸着装置の他の実施態様を示す概略
図である。マスキング板３０１は絶縁材料である支持部
材３０６で固定されている。処理された基板３０２は搬
送機構３１２によって、基板搬出入口３１４より搬送さ
れ、プラズマ電極３０４でありかつ防着板も兼ねる処理
箱から取り除かれる。プラズマ電極３０４は、シールド
ボックス３１５によりアース電位に囲まれている。Embodiment 2 FIG. 3 is a schematic view showing another embodiment of the vacuum evaporation apparatus of the present invention. The masking plate 301 is fixed by a support member 306 made of an insulating material. The processed substrate 302 is transported by the transport mechanism 312 from the substrate loading / unloading port 314, and is removed from the processing box which is the plasma electrode 304 and also serves as a deposition prevention plate. Plasma electrode 304 is surrounded by ground potential by shield box 315.
【００３０】有機蒸着源３０５で処理を施された基板３
０２が取り除かれた後、電源３０７に接続されている防
着板３０４をカソード電極とし、ガス導入口３１１より
酸素を供給してプラズマを発生させる。その時、蒸着源
３０５にもプラズマが及んでしまうのでシャッター３１
３で開口を塞ぐ。マスキング板３０１には、直流２００
Ｖのバイアス電位を印加した。プラズマは基板３０２が
存在していた放電空間３０８だけに発生することを確認
した。Substrate 3 treated by organic deposition source 305
After removing 02, the deposition plate 304 connected to the power supply 307 is used as a cathode electrode, and oxygen is supplied from the gas inlet 311 to generate plasma. At that time, since the plasma reaches the evaporation source 305, the shutter 31 is used.
Close the opening with 3. DC 200 is applied to the masking plate 301.
A bias potential of V was applied. It was confirmed that plasma was generated only in the discharge space 308 where the substrate 302 was present.
【００３１】図２に、実施例２に用いたマスキング板を
示す。マスキング板に付着した有機膜を除去した放電条
件は、以下の通りである。FIG. 2 shows a masking plate used in the second embodiment. The discharge conditions under which the organic film attached to the masking plate was removed are as follows.
【００３２】 処理圧力 １３３Ｐａ 放電電力 １３．５６ＭＨｚ、１００Ｗ 酸素流量 ５０ｓｃｃｍ 処理時間 １０ｍｉｎ マスキング板に付着した有機膜の除去及び評価をするテ
ストを次のように実施した。Processing pressure 133 Pa Discharge power 13.56 MHz, 100 W Oxygen flow rate 50 sccm Processing time 10 min A test for removing and evaluating the organic film adhered to the masking plate was performed as follows.
【００３３】真空槽内圧力をｌ×１０-4Ｐａ以下に排気
した後、有機金属材料蒸発源を充填したルツボを約２５
０℃にコントロールする。水晶式膜厚モニターにより蒸
着速度が安定すること（約０．２ｎｍ／ｓ）を確認し、
シャッターを開き成膜を開始する。水晶式膜厚モニター
で０．３μｍの膜厚が着膜したことを確認しシャッター
を閉める。この膜厚の成膜を１０回行い、成膜されたパ
ターンの測定を行った。After the pressure in the vacuum chamber was evacuated to 1 × 10 −4 Pa or less, the crucible filled with the organic metal material evaporation source was discharged for about 25 minutes.
Control at 0 ° C. The deposition rate was confirmed to be stable (approximately 0.2 nm / s) by a quartz crystal film thickness monitor.
Open the shutter and start film formation. After confirming that a film thickness of 0.3 μm has been formed on the quartz crystal film thickness monitor, close the shutter. Film formation with this film thickness was performed 10 times, and the formed pattern was measured.
【００３４】マスキング板に、堆積した総膜厚は約３μ
ｍである。テスト用マスキング板パターンを図２に示
す。穴は５０μｍ角、穴間隔は３０μｍのパターニング
がなされている。The total film thickness deposited on the masking plate is about 3 μm.
m. FIG. 2 shows the masking plate pattern for the test. The holes are patterned so as to have a size of 50 μm square and the space between the holes is 30 μm.
【００３５】１回目の成膜では、マスキング板の５０μ
ｍ角の穴に対応して、４９μｍ角〜５０μｍ角の誤差範
囲で有機金属材料の堆積層が成膜できたのに対し、１０
回成膜後は、４６μｍ角〜４９μｍ角の誤差になった。
ここで、上記放電条件により、有機金属膜の除去を行っ
た後、再度成膜を行った。パターンを測定した結果、堆
積層の面積は、４９μｍ角〜５０μｍ角の誤差範囲に収
まつた。In the first film formation, the masking plate 50 μm
While the deposited layer of the organometallic material could be formed in an error range of 49 μm square to 50 μm square corresponding to the hole of m square,
After the first film formation, an error of 46 μm square to 49 μm square was obtained.
Here, the organic metal film was removed under the above discharge conditions, and then the film was formed again. As a result of measuring the pattern, the area of the deposited layer was within the error range of 49 μm square to 50 μm square.
【００３６】この結果より、マスキング板に付着した有
機金属膜は、酸素プラズマにより除去されたと判断でき
る。また、マスキング板にバイアス電位を印加している
ため、プラズマの回り込みが良好で、マスキング板溝エ
ッジ部の膜除去が充分に行われたことを確認した。From this result, it can be determined that the organometallic film attached to the masking plate has been removed by the oxygen plasma. In addition, since the bias potential was applied to the masking plate, it was confirmed that the wraparound of the plasma was good and that the film removal at the edge of the groove of the masking plate was sufficiently performed.
【００３７】実施例３ 図４は、蒸発源にエッチングガスのラジカルの進入を防
ぐためのシャッターの構造を示す概略図である。４０１
は蒸発源、４０２はエッチングガスのラジカルの進入を
防ぐためのシャッター板、４０３はシャターを支持する
アーム、４０４はシャッターを回転するための回転軸、
４０５は回転軸を真空シールするシール部材、４０６は
上下運動する回転軸をシールするベローズ、４０７は回
転の動力源であるモーターと回転軸を接続するためのカ
ップリング、４０８はシャッターを回転させるためのモ
ーター、４０９はシャッターを上下させるためのエアー
シリンダーを示す。Embodiment 3 FIG. 4 is a schematic view showing a structure of a shutter for preventing radicals of an etching gas from entering an evaporation source. 401
, An evaporation source, 402, a shutter plate for preventing radicals of the etching gas from entering, 403, an arm for supporting the shutter, 404, a rotating shaft for rotating the shutter,
405 is a seal member for vacuum-sealing the rotating shaft, 406 is a bellows for sealing the rotating shaft that moves up and down, 407 is a coupling for connecting the rotating shaft to a motor which is a power source of rotation, and 408 is for rotating the shutter. And 409, an air cylinder for moving the shutter up and down.
【００３８】酸素のプラズマで、マスキング板に付着し
た有機膜をエッチングする時に、シャッター４０２を閉
じ、エアーシリンダー４０９を下げシャッター４０２を
蒸発源に密着させ酸素ラジカルの進入を防ぐ。この、シ
ャッター４０２により、酸素プラズマにより膜除去して
いる間に、蒸発源ルツボ内の有機材料がエッチングされ
ることは無くなった。When etching the organic film adhered to the masking plate with oxygen plasma, the shutter 402 is closed, the air cylinder 409 is lowered, and the shutter 402 is brought into close contact with the evaporation source to prevent oxygen radicals from entering. The organic material in the evaporation source crucible was not etched by the shutter 402 during the film removal by the oxygen plasma.
【００３９】[0039]
【発明の効果】以上説明した様に、本発明によれば以下
に示す効果が得られる。 １）成膜後、容易に有機膜又は有機金属膜を除去でき、
毎回クリーニング可能になるため、実施例に示したよう
に再現性の良いパターニング精度が得られる。 ２）真空槽を大気開放するサイクルが延びる。材料の投
入サイクルで真空槽を大気開放すれば良く、少なくとも
クリーニング機構がないときに比べ２〜３倍以上（材料
の投入量や膜厚によって異なる）に延びる。真空槽を、
一度大気に開放した後、成膜できる状態（真空の圧力、
水分などの状態）に戻すまで、真空排気で１時間、ベー
キング３時間、ベーキング後の真空排気に５時間、合計
９時間を要している。この時間を必要とする回数が減少
するため生産効率が向上する。As described above, according to the present invention, the following effects can be obtained. 1) After film formation, the organic film or the organic metal film can be easily removed,
Since cleaning becomes possible every time, patterning accuracy with good reproducibility can be obtained as shown in the embodiment. 2) The cycle of opening the vacuum chamber to the atmosphere is extended. The vacuum chamber may be opened to the atmosphere during the material charging cycle, and at least two to three times as long as there is no cleaning mechanism (depending on the material charging amount and film thickness). Vacuum chamber,
Once released to the atmosphere, the film can be formed (vacuum pressure,
It takes 9 hours for evacuation, 3 hours for baking, and 5 hours for evacuation after baking before returning to the state of moisture and the like). Since the number of times that this time is required is reduced, the production efficiency is improved.
【００４０】３）マスクをメンテナンス時に取り外さな
いため、マスクの位置調整は、最初にセットする時のみ
であり、マスクの位置調整機構が必要なくなる。マスク
位置調整機構は、方法、形状により価格は異なるが大幅
のコストダウンとなる。 ４）マスク交換時の、マスク位置調整に要する時間は、
１回あたり約４時間必要であるが、この時間が不要とな
る。 ５）蒸発源ルツボにエッチングガスのラジカルの進入を
防ぐシャッターを有しているために、ルツボ内の材料ま
で除去してしまうことがない。3) Since the mask is not removed at the time of maintenance, the position adjustment of the mask is performed only when the mask is first set, and the mechanism for adjusting the position of the mask is not required. The price of the mask position adjusting mechanism differs depending on the method and shape, but the cost is greatly reduced. 4) The time required for mask position adjustment when changing the mask is as follows:
Approximately four hours are required each time, but this time is unnecessary. 5) Since the shutter for preventing radicals of the etching gas from entering the evaporation source crucible is provided, the material in the crucible is not removed.
【図１】本発明の真空蒸着装置の一実施態様を示す概略
図である。FIG. 1 is a schematic view showing one embodiment of a vacuum evaporation apparatus of the present invention.
【図２】実施例に使用したマスキング板を示す説明図で
ある。FIG. 2 is an explanatory view showing a masking plate used in an example.
【図３】本発明の真空蒸着装置の他の実施態様を示す概
略図である。FIG. 3 is a schematic view showing another embodiment of the vacuum evaporation apparatus of the present invention.
【図４】蒸発源にエッチングガスのラジカルの進入を防
ぐためのシャッターの構造を示す概略図である。FIG. 4 is a schematic view showing a structure of a shutter for preventing radicals of an etching gas from entering an evaporation source.
１０１ マスキング板 １０２ 基板 １０３ 真空処理室 １０４ アース電極 １０５ 有機蒸着源 １０６ マスキング支持部材 １０７ 電源 １０８ 放電空間 １０９ 排気口ａ １１０ 排気口ｂ ｌｌｌ ガス導入口 １１２ 基板搬送機構 １１３ シャッター １１４ 基板搬出入口 ２０１ 開口エッジ部 ２０２ 基板接触面 ３０１ マスキング板 ３０２ 基板 ３０３ 真空処理室 ３０４ プラズマ電極（防着板） ３０５ 有機蒸着源 ３０６ マスキング支持部材 ３０７ 電源 ３０８ 放電空間 ３０９ 排気口ａ ３１０ 排気口ｂ ３１１ ガス導入口 ３１２ 基板搬送機構 ３１３ シャッター ３１４ 基板搬出入口 ３１５ アースシールドボックス ４０１ 蒸発源 ４０２ シャッター ４０３ アーム ４０４ 回転軸 ４０５ シール部材 ４０６ 真空ベローズ ４０７ カップリング ４０８ 回転用モーター ４０９ エアーシリンダー DESCRIPTION OF SYMBOLS 101 Masking plate 102 Substrate 103 Vacuum processing chamber 104 Ground electrode 105 Organic vapor deposition source 106 Masking support member 107 Power supply 108 Discharge space 109 Exhaust port a 110 Exhaust port blll Gas inlet 112 Substrate transfer mechanism 113 Shutter 114 Substrate carry-in / out 201 Opening edge Section 202 Substrate contact surface 301 Masking plate 302 Substrate 303 Vacuum processing chamber 304 Plasma electrode (proof plate) 305 Organic vapor deposition source 306 Masking support member 307 Power supply 308 Discharge space 309 Exhaust port a 310 Exhaust port b 311 Gas inlet 312 Substrate transport Mechanism 313 Shutter 314 Substrate loading / unloading port 315 Earth shield box 401 Evaporation source 402 Shutter 403 Arm 404 Rotating shaft 405 Seal member 406 Vacuum bellows 407 Coupling 408 rotation for the motor 409 air cylinder
───────────────────────────────────────────────────── フロントページの続き (72)発明者 上野 和則 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 Ｆターム(参考） 4K029 BA62 CA01 DA09 DA12 HA03 4K057 DA01 DB17 DD01 DE20 DM40 5G435 AA17 BB05 EE33 KK05 KK10 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Kazunori Ueno 3-30-2 Shimomaruko, Ota-ku, Tokyo F-term in Canon Inc. (reference) 4K029 BA62 CA01 DA09 DA12 HA03 4K057 DA01 DB17 DD01 DE20 DM40 5G435 AA17 BB05 EE33 KK05 KK10
Claims (5)
は有機金属材料を蒸発させ、基板上の特定部のみに有機
膜又は有機金属膜を堆積させるマスキング板を使用する
真空蒸着装置において、真空蒸着によりマスキング板に
堆積した有機膜又は有機金属膜をプラズマの存在下で除
去する手段を具備したことを特徴とする真空蒸着装置。1. A vacuum vapor deposition apparatus comprising a vaporization source, a masking plate for evaporating an organic material or an organic metal material from the evaporation source, and depositing an organic film or an organic metal film only on a specific portion on a substrate, A vacuum deposition apparatus comprising: means for removing an organic film or an organic metal film deposited on a masking plate by vacuum deposition in the presence of plasma.
マスキング板にプラズマを発生させる電力を給電して前
記マスキング板の周辺のみにプラズマを発生させマスキ
ング板に堆積した有機膜又は有機金属膜を除去する手段
からなる請求項１に記載の真空蒸着装置。2. The means for introducing a gas containing oxygen,
2. The vacuum vapor deposition apparatus according to claim 1, further comprising means for supplying power for generating plasma to the masking plate to generate plasma only in the vicinity of the masking plate to remove an organic film or an organic metal film deposited on the masking plate.
マスキング板以外にプラズマを発生させるための電極を
設け、マスキング板にバイアスを印加して前記マスキン
グ板の周辺のみにプラズマを発生させてマスキング板に
堆積した有機膜又は有機金属膜を除去する手段からなる
請求項１に記載の真空蒸着装置。3. The means for introducing a gas containing oxygen,
An electrode for generating plasma other than the masking plate is provided, and a bias is applied to the masking plate to generate plasma only in the vicinity of the masking plate to remove an organic film or an organic metal film deposited on the masking plate. The vacuum evaporation apparatus according to claim 1.
有機膜又は有機金属膜を除去するためのプラズマによっ
て発生した酸素ラジカルの進入を防止するシャッターを
有する請求項１乃至３のいずれかの項に記載の真空蒸着
装置。4. The apparatus according to claim 1, wherein the evaporation source has a shutter for preventing entry of oxygen radicals generated by plasma for removing an organic film or an organic metal film deposited on the masking plate. 5. The vacuum deposition apparatus according to item 1.
レクトロルミネッセンスディスプレイ用材料である請求
項１に記載の真空蒸着装置。5. The vacuum evaporation apparatus according to claim 1, wherein the organic material or the organic metal material is a material for an organic electroluminescence display.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11139110A JP2000328229A (en) | 1999-05-19 | 1999-05-19 | Vacuum deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11139110A JP2000328229A (en) | 1999-05-19 | 1999-05-19 | Vacuum deposition device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000328229A true JP2000328229A (en) | 2000-11-28 |
Family
ID=15237728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11139110A Pending JP2000328229A (en) | 1999-05-19 | 1999-05-19 | Vacuum deposition device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000328229A (en) |
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