JP2000323413A - Semiconductor equipment and manufacture for semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor processor capable of preventing or reducing generation of a slip of a wafer, and a manufacturing method for a semiconductor device. SOLUTION: A holding member 229 is provided in a reaction pipe 2. A projected part 31 projecting outside a wafer mounter 30 is held by a holding part 220 of a holding member 229, and a projected part 31' is held by a holding part 220', whereby the two wafer mounters 30 are laminated vertically and held, and two semiconductor wafers 3, 3 are laminated vertically. A round opening larger than a semiconductor wafer 3 is formed in each wafer mounter 30, and the semiconductor wafer 3 is horizontally supported within the opening by a wafer support part 32 projecting inside the opening, to process the semiconductor wafer 3. A projected part 31 of the wafer mounter 30 is mounted on an arm 12 of a carrier 11, and in a state that a projected part 31' is mounted on an arm 12', the semiconductor wafer 3 is carried in or out.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a diffusion apparatus for oxidizing and annealing a wafer in a semiconductor manufacturing process, and a metal film, a metal silicide film, an oxide film, a nitride film, and a poly film on a wafer surface. Involved in semiconductor manufacturing equipment by thermal CVD (Chemical Vapor Deposition) for forming silicon film, dielectric film or epitaxial silicon film. Among them, especially in hot wall type single-wafer oxidation equipment and single-wafer CVD equipment, The present invention relates to a device that can prevent or suppress the occurrence of slip due to thermal stress.

[0002]

2. Description of the Related Art At present, batch-type apparatuses (vertical diffusion apparatuses, vertical CVD apparatuses) are mainly used in semiconductor heat treatment processes such as oxidation, annealing, and thermal CVD. However, a technique for forming an extremely thin oxide film or a shallow diffusion layer having a thickness of about several nm and a technique for preventing a natural oxide film have become indispensable in response to high integration of semiconductor elements.

In order to meet these demands, a single-wafer type apparatus suitable for short-time processing of several minutes or less is advantageous. Further, this single-wafer apparatus has an advantage that it is easy to cope with a cluster unit and a large-diameter wafer. On the other hand, it has been found that a line in which a batch-type apparatus and another single-wafer-type apparatus (such as an etching apparatus and a sputtering apparatus) are mixed has a problem from the viewpoint of manufacturing a semiconductor device in a short time. For this reason, a single-wafer heat treatment apparatus has become indispensable.

In the above-mentioned single-wafer heat treatment apparatus, rapid heating of the wafer is indispensable for improving the throughput. However, at that time, there is a problem that a slip occurs due to a thermal stress generated by a temperature distribution in a wafer surface. To address this problem, various methods for reducing slip have been studied, mainly for a lamp annealing apparatus that heats a wafer to 1000 ° C. or more in several tens of seconds using a Hach-gen lamp or an arc lamp. Examples are shown below.

JP-A-6-163444 (Prior Art 1) discloses a technique in which a wafer is arranged such that an orientation flat of the wafer is opposed to an opening of a guard ring and heated by a lamp. A technique is disclosed in which an auxiliary ring is bridged between both ends of a guard ring so as to make a detour. further,
The wafer and the guard ring are held by a pin holder so as to be substantially flush with each other.

The above is a known technique for preventing a wafer from slipping in a lamp annealing apparatus. The lamp annealing apparatus to which these known techniques are applied has an advantage that the wafer can be heated in a short time. On the other hand, these have poor wafer temperature uniformity, large power consumption,
There were problems such as a short lamp life.

As a single-wafer heat treatment apparatus which improves this point, there is a heat treatment apparatus for semiconductor wafers disclosed in Japanese Patent Application Laid-Open No. 2-69932 (prior art 2). This is a method in which a plurality of wafers are held almost vertically on a transfer jig that has both wafer support and transfer functions, and is inserted at high speed into a reactor having an insertion / removal port below. This is a vertical single-wafer heat treatment apparatus that oxidizes or anneals. While the above-mentioned lamp annealing apparatus energizes the lamp and starts heating for the first time after the wafer is put into the reaction chamber, this apparatus always energizes the heater to keep the reaction chamber at a high temperature (hot-wall type). ), A method in which a wafer is inserted at a high speed and processed. Therefore, there is an effect that the uniformity of the wafer temperature is good, the power consumption is small, and the life of the heater is long. However, in the hot wall type single wafer type heat treatment apparatus, there is a problem that a slip occurs due to a thermal stress due to a temperature distribution in a wafer surface, similarly to the lamp annealing apparatus. In other words, in this apparatus, since a plurality of wafers are simultaneously processed, the center of the wafer is heated only from one side facing the heater, while the outer periphery of the wafer is also heated by radiation entering from a gap between the wafers. Therefore, the temperature of the outer periphery of the wafer rises faster than that of the inside. In this prior art, a technique is disclosed in which a ring is provided between a plurality of wafers supported on a transfer jig or on the outside of the wafer to relatively slow the temperature rise on the outer periphery of the wafer.

A CV which makes use of the advantages of the above-mentioned vertical single-wafer heat treatment apparatus and further facilitates mounting on a cluster unit.
As a D apparatus, a single-wafer CVD apparatus that processes a plurality of wafers while holding the wafers horizontally is known. Japanese Patent Laying-Open No. 7-94419 (Prior Art 3) discloses the technique of the single-wafer CVD apparatus. This single-wafer CV
The structure of the reactor of the D apparatus will be described with reference to FIGS. FIG. 6 is a cross-sectional view of a reaction furnace of a conventional single-wafer CVD apparatus as viewed from above. FIG. 7 is a longitudinal sectional view of a reaction furnace of a conventional single-wafer CVD apparatus as viewed from the side. FIG. 8 is a longitudinal sectional view showing a method for supporting a wafer in a reaction furnace of a conventional single-wafer CVD apparatus as viewed from the side. A reaction tube 2 is provided inside a flat plate heater 1 divided into a plurality of zones and arranged vertically.
The two wafers 3 are inserted and heated in a horizontal state, and while the gas is supplied from the gas supply ports 4a and 4b, the gas supply port 4 is heated.
This is a device for forming a film on the wafer 3 by evacuating from the exhaust ports 5a and 5b opposite to the sides a and 4b (gas flows in parallel to the wafer 3 as indicated by white or black arrows in the figure). A table 20 is installed inside the reaction tube 2, and support plates 8 a and 8 b for supporting the wafer 3 are provided thereon. The support plates 8a and 8b are located substantially at the center in the reaction tube 2. The support plate holding pins 22 are provided on the table 20 at four corners of the support plates 8a and 8b. The support plate holding pin 22 has a shape that changes in thickness in two stages, with the bottom being the thickest and the top being the thinnest. The lower support plate 8b is adapted to be hooked on the lower step of the support plate holding pin and the upper support plate 8a is stopped by the upper step. An opening 84 having substantially the same shape and the same size as the wafer 3 is provided at the center of the support plates 8a and 8b.
Support pins 82a, 82 provided along the opening 84
Hold wafer 3 on b. The wafer 3 is placed on the transfer jig 11 through one of the gate valves 10a, and two wafers 3 are simultaneously inserted into the reaction tube 2, and the transfer jig 11 is lowered at a predetermined position and transferred to the support plates 8a and 8b. Can be For this reason, the support plates 8a and 8b are provided with slits 81 at positions where the transfer jig 11 moves up and down. In a single-wafer oxidizing apparatus having the same shape as this single-wafer CVD apparatus, a wafer is directly placed on a table 20 installed in a reaction tube 2 without using a rectangular support plate as shown in FIG. I was trying to do it.

[0009]

The effect of the above-mentioned occurrence of slip was not so large as to be a problem in a thermal CVD process which is often performed at a relatively low temperature of 900 ° C. or less. In the processes such as oxidation, annealing, and epitaxial growth at temperatures of not less than ° C., it has become remarkable.

Hereinafter, this point will be described in more detail with reference to FIGS. FIG. 10 is a numerical graph showing a difference in temperature rise between the center and the periphery of a wafer when a wafer is inserted in a horizontally supported single-wafer CVD apparatus according to the related art. FIG. 11 is a numerical graph showing a temperature distribution in a wafer surface when a transfer jig is put into a reaction furnace in order to take out a wafer heated to a high temperature. As shown in these figures, the temperature distribution generated in the wafer surface increases when the wafer is inserted into and removed from the reaction tube, and the main cause is different between when the wafer is inserted and when the wafer is removed. FIG. 10 shows a difference in temperature rise between the center and the periphery of the wafer at the time of insertion. The horizontal axis indicates elapsed time, and the vertical axis indicates temperature or temperature difference. In the heating process after insertion, the temperature rises faster at the periphery than at the center of the wafer. This is (1)
In order to process two wafers at the same time, the center is heated from one side, while the periphery is irradiated from the gap between the two wafers and heated from both sides. (2) The center of the heater is the inserted wafer The cooling effect is more remarkable compared to the surroundings, and the temperature reduction width is large. On the other hand, in FIG. 11, the horizontal axis is a position perpendicular to the direction in which the wafer is transported (the center of the wafer is 0), and the vertical axis is a graph showing the temperature of the wafer. From 0 to 5 sec, the calculation results are obtained under the condition that the wafer and the transfer jig are inside the furnace, and thereafter, the wafer and the transfer jig are taken out of the furnace. As shown in FIG. 11, at the time of unloading, a low-temperature transfer jig (usually waiting at room temperature outside the reaction furnace during processing) approaches or partially contacts the high-temperature wafer, The wafer is locally cooled, resulting in a large temperature distribution. As described above, in the single-wafer heat treatment apparatus according to the related art, a temperature difference of several tens of degrees Celsius occurs in the wafer surface at the time of insertion and at the time of removal.

Therefore, in order to solve the problem of occurrence of slip and to obtain an effective method of reducing slip in a hot wall type single wafer processing apparatus, (1) the temperature rise around the wafer at the time of insertion is larger than that at the center. (2) reducing the local temperature distribution at the wafer support point at the time of insertion, and (3) localizing the wafer temperature at the time of removal by contacting or approaching the transfer jig. (4) It is important to solve the four problems of preventing in-plane temperature difference caused by the fact that the temperature drop around the wafer becomes faster than the center at the time of unloading, contrary to insertion. It is.

The prior art 3 does not consider the reduction of the slip generated due to the above reasons. Further, in the slip reduction method shown in the above other conventional technology,
Applying them to a single-wafer heat treatment apparatus has the following problems.

First, in the apparatus disclosed in prior art 2 for holding and processing two wafers vertically, the transfer jig also serves as a wafer support mechanism. The structure cannot be taken out of the processing chamber and the reactor cannot be covered. In addition, the ring used for the purpose of preventing slip is also formed integrally with the transfer jig or is always used in a state of being integrally assembled. No consideration has been given to the fact that the method cannot be applied to a cluster unit that needs to be partitioned by a gate valve or the like.

The technology disclosed in the prior art 1 is based on a lamp annealing apparatus, and has a structure in which a ring is permanently installed in a reaction chamber. Therefore, no consideration has been given to the occurrence of slip due to uneven temperature due to approach and contact of the transfer jig when inserting and removing a wafer, that is, the above-mentioned problem (3).

Therefore, the main object of the present invention is to prevent or reduce the occurrence of wafer slip,
In particular, it is an object of the present invention to provide an effective semiconductor processing apparatus as a single-wafer heat treatment semiconductor processing apparatus for processing a wafer while holding it substantially horizontally.

[0016]

According to a first aspect of the present invention, there is provided a semiconductor manufacturing apparatus including a heatable reaction furnace, a wafer mounting body for mounting a semiconductor wafer, a carrier, and a holding member. An outer periphery of the wafer mounting body is substantially circular, and the wafer mounting body has first and second protrusions protruding outward from the outer periphery thereof; and a shape substantially similar to the outer periphery of the semiconductor wafer. Or the opening is a circular opening and is larger than the semiconductor wafer,
A wafer supporter projecting toward the inside of the opening and supporting the semiconductor wafer, wherein the carrier mounts the wafer mount on which the semiconductor wafer is mounted substantially horizontally into the reactor and / or Alternatively, the wafer is unloaded from the reaction furnace, and the first and second protrusions of the wafer mounting body are straight lines passing through the center of the opening, and the carrier loads the wafer mounting body into the reaction furnace. And / or provided on the opposite side to the straight line parallel to the transfer direction carried out of the reaction furnace, wherein the transfer body holds the first and second protrusions so that the transfer body becomes the wafer A holding member is held, and the holding member is provided on the first and second wafer mounting members.
First and second holding portions respectively holding the projections of the first and second holding portions arranged in parallel with the transport direction, wherein the wafer mounting body on which the semiconductor wafer is mounted is provided. A semiconductor manufacturing apparatus is provided in which the semiconductor wafer is held at a processing position of the semiconductor wafer in the reaction furnace by holding the semiconductor wafer.

Preferably, the reactor is a hot wall type.

Preferably, the semiconductor manufacturing apparatus comprises a second
A second wafer mounting body for mounting the semiconductor wafer and a second carrier, wherein the outside of the second wafer mounting body is substantially circular, and the second wafer mounting body is A third and a fourth protrusion protruding outward from the outer periphery, and a second opening having a shape or a circular shape substantially similar to the outer periphery of the second semiconductor wafer, the second opening being formed from the second semiconductor wafer; The second opening, and a second wafer supporting portion projecting toward the inside of the second opening and supporting the second semiconductor wafer. Loading and / or unloading the second wafer mounted body having the semiconductor wafer mounted thereon substantially horizontally into and / or out of the reaction furnace; The protrusion is A second straight line passing through the center of the second opening, wherein the second transfer body loads and / or unloads the second wafer mounted body into and from the reaction furnace. The second carrier is provided on the opposite side to the second straight line parallel to the second straight line, and the second carrier holds the third and fourth protrusions, so that the second
And a holding member holding the second wafer mounting member, and the holding member holding the third and fourth projecting portions of the second wafer mounting member, respectively. And further comprising the third and fourth holding portions arranged in parallel with the second transfer direction, wherein the first and second holding portions hold the wafer mounting body on which the semiconductor wafer is mounted. Holding the second wafer mounting body on which the second semiconductor wafer is mounted by the third and fourth holding units, thereby allowing the wafer mounting body and the second wafer mounting body to be connected to the reaction furnace. And at a processing position of the semiconductor wafer and the second semiconductor wafer in the semiconductor device, the semiconductor wafer and the second semiconductor wafer are substantially vertically overlapped with each other.

[0019] More preferably, the semiconductor wafer and the second semiconductor wafer are substantially vertically overlapped with each other at the processing position.

[0020] Preferably, the reaction furnace is a hot wall type, and the reaction furnace includes a reaction tube and heating devices respectively provided above and below the reaction tube.

According to claim 2, a heatable reactor is provided;
What is claimed is: 1. A semiconductor manufacturing apparatus comprising: a wafer mounting body for mounting a semiconductor wafer; and a holding member, wherein the outside of the wafer mounting body is substantially circular, and the wafer mounting body protrudes outward from an outer periphery thereof. First and second projections, an opening having a shape or a circular shape substantially similar to the outer periphery of the semiconductor wafer, the opening being larger than the semiconductor wafer, and the semiconductor projecting toward the inside of the opening. A wafer support for supporting a wafer, wherein the first and second protrusions of the wafer mount are straight lines passing through the center of the opening, and the wafer mount is carried into the reaction furnace and And / or provided on opposite sides of the straight line parallel to the transfer direction carried out of the reaction furnace, wherein the holding member is provided on the first side of the wafer mounting body. First and second holding units respectively holding the second and the second protrusions, the first and second holding units arranged in parallel with the transport direction, and the wafer on which the semiconductor wafer is mounted A semiconductor manufacturing apparatus is provided, wherein the semiconductor wafer is held at a processing position of the semiconductor wafer in the reaction furnace by holding the mounting body.

Preferably, the reaction furnace is of a hot wall type.

Preferably, the semiconductor manufacturing apparatus comprises a second
A second wafer mounting body for mounting the semiconductor wafer, wherein the outside of the second wafer mounting body is substantially circular, and the second wafer mounting body protrudes outward from the outer periphery thereof. Third and fourth protruding portions, and the second opening having a shape or a circle substantially similar to the outer periphery of the second semiconductor wafer and being larger than the second semiconductor wafer. And a second wafer supporting portion projecting toward the inside of the second opening and supporting the second semiconductor wafer, wherein the third and fourth projecting portions of the second wafer mounting body are A second straight line passing through the center of the second opening and parallel to a second transfer direction in which the second transfer body is loaded into and / or unloaded from the reaction furnace by the second transfer body. Opposite to each other with respect to line 2 Wherein the holding member is a third and a fourth holding portion for holding the third and fourth projecting portions of the second wafer mounting body, respectively, and is arranged in parallel with the second transfer direction. Said third and fourth
The first and second holding portions hold the wafer mounted body on which the semiconductor wafer is mounted, and the third and fourth holding portions hold the second wafer.
Holding the second wafer mounting body on which the semiconductor wafer is mounted, thereby processing the wafer mounting body and the second wafer mounting body in the reaction furnace by treating the semiconductor wafer and the second semiconductor wafer. In position, they are arranged substantially vertically one above the other.

[0024] More preferably, the semiconductor wafer and the second semiconductor wafer are substantially vertically overlapped with each other at the processing position.

Preferably, the reaction furnace is a hot wall type, and the reaction furnace includes a reaction tube and heating devices provided above and below the reaction tube, respectively.

According to claim 3, a heatable reactor is provided;
What is claimed is: 1. A semiconductor manufacturing apparatus comprising: a wafer mounting body for mounting a semiconductor wafer; and a holding member, wherein the outside of the wafer mounting body is substantially circular, and the wafer mounting body protrudes outward from an outer periphery thereof. First and second projections, an opening having a shape or a circular shape substantially similar to the outer periphery of the semiconductor wafer, the opening being larger than the semiconductor wafer, and the semiconductor projecting toward the inside of the opening. A wafer support for supporting a wafer, wherein the first and second protrusions of the wafer mount are straight lines passing through the center of the opening, and the wafer mount is carried into the reaction furnace and And / or provided on opposite sides of the straight line parallel to the transfer direction carried out of the reaction furnace, wherein the holding member is provided on the first side of the wafer mounting body. A first and a second holding unit for holding the first and second protrusions, respectively, using the semiconductor manufacturing apparatus having the first and second holding units arranged in parallel with the transport direction. A method of manufacturing a semiconductor device comprising a step of processing a semiconductor wafer, comprising: loading the wafer mounted body having the semiconductor wafer mounted therein into the reaction furnace; and the first and the second of the wafer mounted body. The semiconductor wafer is held by the first and second holding portions of the holding member, and the semiconductor wafer is held in the reaction furnace by holding the wafer mounted body on which the semiconductor wafer is mounted. Performing the processing of the semiconductor wafer while holding the semiconductor wafer at a processing position, and mounting the wafer mounting body on which the semiconductor wafer is mounted. A step of unloading from the serial reactor, a method of manufacturing a semiconductor device, characterized in that it comprises a are provided.

Preferably, the reactor is a hot wall type.

Preferably, the semiconductor manufacturing apparatus is a second semiconductor manufacturing apparatus.
A second wafer mounting body for mounting the semiconductor wafer, wherein the outside of the second wafer mounting body is substantially circular, and the second wafer mounting body protrudes outward from the outer periphery thereof. Third and fourth protruding portions, and the second opening having a shape or a circle substantially similar to the outer periphery of the second semiconductor wafer and being larger than the second semiconductor wafer. And a second wafer supporting portion projecting toward the inside of the second opening and supporting the second semiconductor wafer, wherein the third and fourth projecting portions of the second wafer mounting body are A second straight line passing through the center of the second opening and parallel to a second transfer direction in which the second transfer body is loaded into and / or unloaded from the reaction furnace by the second transfer body. Opposite to each other with respect to line 2 Wherein the holding member is a third and a fourth holding portion for holding the third and fourth projecting portions of the second wafer mounting body, respectively, and is arranged in parallel with the second transfer direction. Said third and fourth
Further comprising a holding portion, the method of manufacturing a semiconductor device,
Loading the wafer mount on which the semiconductor wafer is mounted and the second wafer mount on which the second semiconductor wafer is mounted into the reaction furnace; and the first and second mounting of the wafer mount. The protruding portions are held by the first and second holding portions of the holding member, respectively, and the third and fourth protruding portions of the second wafer mounting body are held by the third and fourth holding portions of the holding member. The wafer mounting body on which the semiconductor wafer is mounted is held by the first and second holding units by holding the holding unit, respectively, and the second and second holding units are held by the third and fourth holding units.
Holding the second wafer mounting body on which the semiconductor wafer is mounted, thereby processing the wafer mounting body and the second wafer mounting body in the reaction furnace by treating the semiconductor wafer and the second semiconductor wafer. Performing the processing of the semiconductor wafer and the second semiconductor wafer in a state where the semiconductor wafer and the second semiconductor wafer are substantially overlapped with each other at a position, and the wafer mounting body and the second semiconductor wafer on which the semiconductor wafer is mounted. Carrying out the mounted second wafer mounting body from the reaction furnace.

[0029] More preferably, the semiconductor wafer and the second semiconductor wafer are disposed substantially vertically on each other at the processing position.

Preferably, the reaction furnace is a hot wall type, and the reaction furnace includes a reaction tube and heating devices respectively provided above and below the reaction tube.

[0031]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings.

1 and 2 are a cross-sectional view and a vertical cross-sectional view, respectively, for explaining the structure of a single-wafer semiconductor heat treatment apparatus used in an embodiment of the present invention.

The reaction furnace of the single-wafer type semiconductor heat treatment apparatus includes:
A hot-wall type reaction furnace, a reaction tube 2, plate heaters 1, 1 disposed above and below the reaction tube 2, a heat insulating material 7 covering the reaction tube 2 and the plate heaters 1, 1, Flanges 9a, 9b provided on both sides;
9b, gate valves 10a,
10b. The upper and lower flat plate heaters 1 are each divided into a plurality of zones.

A holding member 229 is provided in the reaction tube 2, and the two wafer mounts 30, 30 are attached to the holding member 229.
Are mounted on each other in the vertical direction, and the wafer mounting body 3
Semiconductor wafers 3 and 3 are horizontally mounted on 0 and 30 respectively. Carrier 1 via gate valve 10a
1 moves in and out of the reaction tube 2 and is simultaneously loaded into the reaction tube 2 while the two wafer mounts 30 and 30 each mounting the semiconductor wafers 3 and 3 are vertically stacked on each other,
It is carried out of the reaction tube 2. In a state where the inside of the reaction tube 2 is heated by the heaters 1 and 1, the two wafer mounts 30 and 30 on which the semiconductor wafers 3 and 3 are respectively mounted are carried into the reaction tube 2, and the support 30 and 30
Is mounted thereon to process the semiconductor wafers 3, 3, and then the support 3 on which the semiconductor wafers 3, 3 are mounted, respectively.
Unload 0 and 30.

In processing the semiconductor wafers 3, 3, the gas is exhausted from the exhaust ports 5b, 5a opposite to the gas supply ports 4a, 4b while supplying the gas from the gas supply ports 4a, 4b (see FIG. The gas flows parallel to the wafer 3 as indicated by white or black arrows.), And a process such as film formation on the semiconductor wafer 3 is performed. The flow of the gas supplied from the gas supply port 4a and exhausted from the exhaust port 5b and the flow of the gas supplied from the gas supply port 4b and exhausted from the exhaust port 5a are alternately switched.

FIG. 3 is a plan view for explaining the shapes of the wafer mounting body and the carrier in one embodiment of the present invention.

In the reaction tube 2, two holding parts 220, 22
A holding member 229 having 0 'is provided. Two holding parts 22
Reference numerals 0 and 220 ′ are arranged in parallel to the transport direction x of the semiconductor wafer 3. The two holding parts 220, 220 '
Upper holding parts 221, 221 'and lower holding parts 222, 222'
And each is provided. Upper holding parts 221, 221 ',
Each of the lower holding parts 222 and 222 ′ is a semiconductor wafer 3
Are arranged in parallel to the transport direction x.

Two wafer mounts 30 are vertically stacked on each other. Each wafer mount 30 includes
A circular opening 34 larger than the semiconductor wafer 3 is formed, and three wafer support portions 32 projecting toward the inside of the opening 30 are provided. Wafer support 3
2 supports the semiconductor wafer 3 horizontally in the opening 34. 2 which is held horizontally in this way
Semiconductor wafers 3, 3 are stacked in the vertical direction.

The outer sides of the two wafer mounts 30 are circular, and the wafer mounts 30 are ring-shaped. Four protruding portions 31, 31, 31 ', 31' protruding horizontally toward the outside of the wafer mounting body 30 are provided. The protruding portions 31, 31 and the protruding portions 31'31 'are straight lines BB passing through the center C of the opening 34, and are provided on opposite sides to a straight line BB parallel to the transport direction x of the semiconductor wafer 3. I have. Projections 31, 31, 31'31 '
Is provided in parallel with the y direction orthogonal to the transport direction x in the horizontal plane.

The two projections 31, 31 of the upper wafer mounting body 30 are held by an upper holding part 221, and the two projections 31 ', 31' are held by an upper holding part 221 '. Two projections 31 of the body 30,
31 is held by the lower holding part 222, and the two protruding parts 31 'and 31' are held by the lower holding part 222 '. In this manner, the wafer mounting body 30 is
The two semiconductor wafers 3 held horizontally are processed while being held in the reaction tube 2 by 29.

Loading of the semiconductor wafer 3 into the reaction tube 2;
The unloading from the reaction tube 2 is performed using two carriers 11 as follows. The two transporters 11 are attached to a transport mechanism (not shown), and move up, down, horizontally, and rotate by the transport mechanism, respectively. The semiconductor wafer 3 is placed on each carrier 11 in a state where the two carriers 11 are vertically stacked while maintaining a predetermined distance from each other.
The semiconductor wafer 3 is loaded into the reaction tube 2 and unloaded from the reaction tube 2. During transfer, two wafer carriers 1
Numerals 1 are vertically stacked on each other, and semiconductor wafers 3 mounted horizontally on them are also vertically stacked on each other.

The leading end of the transfer body 11 is split into two arms to form two arms 12, 12 '. Arm 12, 12 '
Enters and exits the reaction tube 2 in parallel with the transfer direction x of the semiconductor wafer 3. Put the protrusions 31, 31 on the arm 12,
The wafer mounting body 30 is mounted on the carrier 11 by placing the protruding portions 31 ′, 31 ′ on the arm 12 ′. The distance between the arms 12 and 12 ′ of the carrier 11 is larger than the diameter of the semiconductor wafer 3, and when the wafer mounting body 30 on which the semiconductor wafer 3 is placed horizontally is viewed from the vertical direction, the distance is outside the semiconductor wafer 3. The arm 12, 12 ′ of the carrier 11 supports the wafer mounting body 30.

The place where the arms 12 and 12 of the carrier 11 support the wafer mount 30 is preferably outside the semiconductor wafer 3 when viewed from the vertical direction, but is mounted on the wafer mount 30. Semiconductor wafer 3
Two tangents to the outer periphery of the carrier, wherein the carrier 11 carries the semiconductor wafer 3 and the wafer-mounted body 30 into and / or out of the reaction tube 2 in parallel with the carrying direction x. When viewed from the vertical direction, each of the semiconductor wafers 301 and 301 is located outside the semiconductor wafer 3 (arrow Y).
It is more preferable that the arms 12 and 12 ′ of the carrier 11 hold the wafer mounting body 30 in the (direction).

In the present embodiment, the reaction tube 2
The arm 1 of the carrier 11
2 and 12 are two holding portions 220 and 22 of the holding member 229.
0 ', but if there is no restriction on the space in the reaction tube 2 or the like, the two holding portions 22 of the holding member 229
It is more preferable to be located outside 0, 220 '.

Next, the processing procedure of the semiconductor wafer 3 will be described. The two semiconductor wafers 3, 3 are horizontally mounted one by one on the two wafer mounts 30, 30, and the two wafer mounts 30, 30 are mounted on the two transfer bodies 11, 11 respectively.
Respectively. In such a state, the semiconductor wafers 3, 3, the wafer mounts 30, 30, the carrier 1
1, 1 and 11 are arranged vertically one above the other with a predetermined space therebetween, and stand by outside the reaction tube 2. Thereafter, the gate valve 10a is opened, and the semiconductor wafer 3,
3. The carriers 11, 11 are inserted into the reaction tube 2 with the wafer mounts 30, 30 stacked vertically. Thereafter, the carriers 11, 11 are moved downward, the two protrusions 31, 31 of the wafer mounting body 30 are put on the upper holding part 221, and the two protrusions 31 ', 31' are put on the upper holding part 221 '. , The two protrusions 31 of the lower wafer mounting body 30,
31 is placed on the lower holding part 222, and the two projecting parts 31 ', 3
1 ′ is placed on the lower holding part 222 ′, whereby the two wafer mounts 30 are held by the holding member 229 in the reaction tube 2
Hold within.

Thereafter, the carriers 11, 11 move to the outside of the reaction tube 2, close the gate valve 10a, and supply the gas from the gas supply ports (4a, 4b).
The gas is exhausted from the exhaust port 5 (5b, 5a) opposite to (4a, 4b) (the gas flows parallel to the wafer 3 as indicated by white or black arrows in the figure), and the film on the semiconductor wafer 3 is formed. Processing such as formation is performed (see FIGS. 1 and 2). Gas supply port 4
The flow of the gas supplied from the exhaust port a and exhausted from the exhaust port 5b and the flow of the gas supplied from the gas supply port 4b and exhausted from the exhaust port 5a are alternately switched.

After the processing of the semiconductor wafers 3 and 3 is completed, the inside of the reaction tube 2 is purged to a predetermined atmosphere. Thereafter, the gate valve 10a is opened and the carriers 11 are moved up and down at predetermined intervals. It is introduced into the reaction tube 2 in a state of being held vertically and
2, the protrusions 31, 31, of the upper wafer mounting body 30,
31 ′, 31 ′, the arms 12, 12 of the lower carrier 11 are positioned below the protrusions 31, 31, 31 ′, 31 ′ of the lower wafer mount 30, and then ,
By lifting the carriers 11, 11 upward, the protrusions 31, 31, 31 ', 3'
1 ′ is placed on the arms 12 and 12 ′ of the upper carrier 11;
Projection portions 31, 31, 3 of lower wafer mounting body 30
1 ′ and 31 ′ are connected to the arms 12 and 12 ′ of the lower transport body 11
Put on. Thereafter, the carrier 1 is placed in a state where the semiconductor wafers 3 and 3 and the wafer mounts 30 and 30 are vertically stacked.
1 and 11 are carried out of the reaction tube 2 and then the gate valve 10a is closed.

The upper and lower heaters 1 and 1 always heat the inside of the reaction furnace during loading and processing of the semiconductor wafers 3 and 3 into and out of the reaction tube 2.

The wafer mount 30 is preferably made of quartz,
Although it is made of SiC or the like, when it is at a high temperature, there is a possibility that it will sag with quartz.
It is better to use iC. However, when SiC is used, since SiC has a large thermal expansion, when it is deformed, it causes a displacement between the wafer mounting body 30 and the carrier 11, so that accurate positioning in the reaction tube 2 becomes difficult. It becomes difficult and there is a risk of falling,
Projecting portion 3 of wafer mounting body 30 in contact with carrier 11
The back surface 131 of 1, 31 'is roughened to prevent slippage. For the same purpose, the concave portion 2 is
25, and tapered portions 212 are provided on both sides of the concave portion 225 (see FIG. 5).

According to the configuration of the present embodiment described above, in the hot wall type single wafer heat treatment apparatus,
(1) Since the temperature distribution generated in the wafer surface can be reduced, even if the wafer is processed at a temperature of 900 ° C. or more, the occurrence of slip due to thermal stress can be significantly reduced. For this reason, the yield of the wafer heat treatment process can be improved.

(2) Since a small number of wafers are processed at a time from a few wafers to a few wafers at a time, cooperation with other single-wafer apparatuses is good, and a period required for manufacturing a semiconductor as a whole (Turn) Around Time) can be shortened.

(3) In such an apparatus, the transfer jig can be taken out of the processing chamber during processing of the wafer and can be closed in the reaction furnace with a gate valve or the like. Is not exposed to the atmosphere and can be applied to a multi-chamber type cluster unit, which is effective in reducing a natural oxide film and the like.

The single-wafer heat treatment apparatus is mainly used for oxidizing the wafer 3 and usually includes O ₂ , H ₂ O
And the like. (4) The single-wafer heat treatment apparatus according to the present invention can easily apply an oxidation treatment with H ₂ O, which was difficult with an apparatus using a lamp for heating. Because, since a lamp annealing apparatus is usually partially low-temperature portion in the reaction chamber, H ₂ 0 vapor will condense. In the hot-wall type single-wafer heat treatment apparatus according to the present invention, the temperature in the wafer surface can be made uniform and the variation in the temperature distribution can be reduced, so that this problem does not occur and the oxidation treatment can be performed.

Although the present invention is particularly effective for application to an oxidizing apparatus, it can also be suitably applied to an epitaxial growth apparatus and a CVD apparatus which process at a temperature of 900 ° C. or more.

[0055]

According to the present invention, there are provided a semiconductor manufacturing apparatus and a semiconductor device manufacturing method capable of preventing or reducing the occurrence of wafer slip.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a structure of a single-wafer semiconductor heat treatment apparatus used in an embodiment of the present invention.

FIG. 2 is a longitudinal sectional view for explaining the structure of a single-wafer semiconductor heat treatment apparatus used in one embodiment of the present invention.

FIG. 3 is a cross-sectional view illustrating a wafer mounting body, a transfer body, and a holding member in the single-wafer semiconductor heat treatment apparatus according to one embodiment of the present invention.

FIG. 4 is a view taken along line XX of FIG. 3;

FIG. 5 is a sectional view taken along line ZZ of FIG. 3;

FIG. 6 is a cross-sectional view of a reaction furnace of a horizontally supported single-wafer CVD apparatus according to the related art as viewed from above.

FIG. 7 is a longitudinal sectional view of a reaction furnace of a horizontally supported single-wafer type CVD apparatus according to the related art, as viewed from the side.

FIG. 8 is a side sectional view showing a method of supporting a wafer in a reactor in a horizontally supported single wafer CVD apparatus according to a conventional technique.

FIG. 9 is a perspective view showing a state in which a wafer is being inserted into or taken out of a reaction furnace in a conventional horizontally supported single-wafer oxidizing apparatus.

FIG. 10 is a numerical graph showing a difference in temperature rise between the center and the periphery of a wafer when a wafer is inserted in a horizontally supported single-wafer CVD apparatus according to the related art.

FIG. 11 is a numerical graph showing a temperature distribution in a wafer surface when a transfer jig is put into a reaction furnace when a wafer is taken out in a horizontally supported single-wafer CVD apparatus according to a conventional technique.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Flat plate heater 2 ... Reaction tube 3 ... Semiconductor wafer 4a, 4b ... Gas supply port 5a, 5b ... Exhaust port 7 ... Heat insulation material 9a, 9b ... Flange 10a, 10b ... Gate valve 11 ... Carrier 12, 12 '... Arm Reference Signs List 30 wafer mounting body 31, 31 'projecting part 32 wafer supporting part 34 opening 131 back surface 212 taper 220, 220' holding part 221, 221 'upper holding part 222, 222' ... lower holding part 225 ... recess 229 ... holding member 301 ... tangential line

Claims (3)

[Claims] 1. A semiconductor manufacturing apparatus comprising a heatable reaction furnace, a wafer mount for mounting a semiconductor wafer, a carrier, and a holding member, wherein the outside of the wafer mount is substantially circular. Wherein the wafer mounting body has first and second protrusions projecting outward from the outer periphery thereof, and an opening having a shape or a circular shape substantially similar to the outer periphery of the semiconductor wafer, and The opening, and a wafer supporting portion protruding toward the inside of the opening and supporting the semiconductor wafer, wherein the wafer mounting body on which the semiconductor wafer is mounted substantially horizontally by the carrier is reacted. Loading into and / or unloading from the reactor, the first and second protrusions of the wafer mounting body,
A straight line passing through the center of the opening, wherein the carrier is provided on the side opposite to the straight line parallel to the carrying direction in which the wafer mounting body is carried into and / or out of the reaction furnace. The carrier holds the first and second protrusions, so that the carrier holds the wafer mount, and the holding member is configured to hold the first and second protrusions of the wafer mount. First and second holding units respectively holding the units, the first and second holding units arranged in parallel to the transport direction, and holding the wafer mounting body on which the semiconductor wafer is mounted. A semiconductor manufacturing apparatus for holding the semiconductor wafer at a processing position of the semiconductor wafer in the reaction furnace. 2. A semiconductor manufacturing apparatus comprising a heatable reaction furnace, a wafer mount for mounting a semiconductor wafer, and a holding member, wherein the outside of the wafer mount is substantially circular, The mounting body has first and second protrusions protruding outward from the outer periphery thereof, and the opening having a shape or a circular shape substantially similar to the outer periphery of the semiconductor wafer and being larger than the semiconductor wafer. And a wafer supporting portion projecting toward the inside of the opening and supporting the semiconductor wafer, wherein the first and second projecting portions of the wafer mounting body are:
A straight line passing through the center of the opening, the wafer mounting body being provided on the opposite side to the straight line parallel to a transfer direction in which the wafer mounting body is loaded into and / or unloaded from the reaction furnace; A holding member for holding the first and second protrusions of the wafer mounting body, respectively, wherein the first and second holding members are arranged in parallel with the transport direction; A semiconductor manufacturing apparatus, comprising: a unit for holding the semiconductor wafer at a processing position of the semiconductor wafer in the reaction furnace by holding the wafer mounting body on which the semiconductor wafer is mounted. 3. A semiconductor manufacturing apparatus comprising a heatable reaction furnace, a wafer mounting body for mounting a semiconductor wafer, and a holding member, wherein the outside of the wafer mounting body is substantially circular, The mounting body has first and second protrusions protruding outward from the outer periphery thereof, and the opening having a shape or a circular shape substantially similar to the outer periphery of the semiconductor wafer and being larger than the semiconductor wafer. And a wafer supporting portion projecting toward the inside of the opening and supporting the semiconductor wafer, wherein the first and second projecting portions of the wafer mounting body are:
A straight line passing through the center of the opening, the wafer mounting body being provided on the opposite side to the straight line parallel to a transfer direction in which the wafer mounting body is loaded into and / or unloaded from the reaction furnace; A holding member for holding the first and second protrusions of the wafer mounting body, respectively, wherein the first and second holding members are arranged in parallel with the transport direction; A method of manufacturing a semiconductor device comprising a step of processing the semiconductor wafer using the semiconductor manufacturing apparatus having a unit, wherein a step of loading the wafer mounting body mounting the semiconductor wafer into the reaction furnace, Before mounting the semiconductor wafer by holding the first and second protrusions of the wafer mounting body with the first and second holding portions of the holding member, respectively. Performing the processing of the semiconductor wafer while holding the semiconductor wafer at the processing position of the semiconductor wafer in the reaction furnace by holding the wafer mounting body; and Carrying out of the reaction furnace.